DE112015003629A5 - Optoelektronisches Bauelement und Verfahren zu seiner Herstellung - Google Patents

Optoelektronisches Bauelement und Verfahren zu seiner Herstellung Download PDF

Info

Publication number
DE112015003629A5
DE112015003629A5 DE112015003629.6T DE112015003629T DE112015003629A5 DE 112015003629 A5 DE112015003629 A5 DE 112015003629A5 DE 112015003629 T DE112015003629 T DE 112015003629T DE 112015003629 A5 DE112015003629 A5 DE 112015003629A5
Authority
DE
Germany
Prior art keywords
production
optoelectronic component
optoelectronic
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112015003629.6T
Other languages
English (en)
Inventor
Christoph Eichler
Adrian Stefan Avramescu
Teresa Wurm
Jelena Ristic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112015003629A5 publication Critical patent/DE112015003629A5/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE112015003629.6T 2014-08-04 2015-08-04 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung Ceased DE112015003629A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014111058.7 2014-08-04
DE102014111058.7A DE102014111058A1 (de) 2014-08-04 2014-08-04 Optoelektronisches Bauelement und Verfahren zur Herstellung
PCT/EP2015/067878 WO2016020348A1 (de) 2014-08-04 2015-08-04 Optoelektronisches bauelement und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
DE112015003629A5 true DE112015003629A5 (de) 2017-06-01

Family

ID=53835416

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102014111058.7A Withdrawn DE102014111058A1 (de) 2014-08-04 2014-08-04 Optoelektronisches Bauelement und Verfahren zur Herstellung
DE112015003629.6T Ceased DE112015003629A5 (de) 2014-08-04 2015-08-04 Optoelektronisches Bauelement und Verfahren zu seiner Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102014111058.7A Withdrawn DE102014111058A1 (de) 2014-08-04 2014-08-04 Optoelektronisches Bauelement und Verfahren zur Herstellung

Country Status (5)

Country Link
US (1) US9818910B2 (de)
JP (1) JP6551705B2 (de)
CN (1) CN107004739B (de)
DE (2) DE102014111058A1 (de)
WO (1) WO2016020348A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10211297B2 (en) * 2017-05-03 2019-02-19 Globalwafers Co., Ltd. Semiconductor heterostructures and methods for forming same
DE102017122032A1 (de) 2017-09-22 2019-03-28 Osram Opto Semiconductors Gmbh Laserdiode
CN112514183A (zh) * 2018-05-30 2021-03-16 恩耐公司 具有量子阱偏移和沿着快轴的有效单模激光发射的大光学腔（loc）激光二极管
DE102022110693A1 (de) * 2022-05-02 2023-11-02 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656456B2 (ja) * 1999-04-21 2005-06-08 日亜化学工業株式会社 窒化物半導体素子
US6515313B1 (en) * 1999-12-02 2003-02-04 Cree Lighting Company High efficiency light emitters with reduced polarization-induced charges
JP3498697B2 (ja) * 2000-07-07 2004-02-16 日亜化学工業株式会社 窒化物半導体素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
US20020096675A1 (en) * 2000-11-15 2002-07-25 Cho Alfred Yi Intersubband optical devices that operate at wavelengths shorter than 1.7 um
JP4441563B2 (ja) * 2000-12-28 2010-03-31 日亜化学工業株式会社 窒化物半導体レーザ素子
US6891187B2 (en) * 2001-08-17 2005-05-10 Lucent Technologies Inc. Optical devices with heavily doped multiple quantum wells
US6724013B2 (en) * 2001-12-21 2004-04-20 Xerox Corporation Edge-emitting nitride-based laser diode with p-n tunnel junction current injection
US6515308B1 (en) * 2001-12-21 2003-02-04 Xerox Corporation Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection
JP2003273469A (ja) * 2002-03-15 2003-09-26 Nec Corp 窒化ガリウム系半導体素子及びその製造方法
US7919791B2 (en) * 2002-03-25 2011-04-05 Cree, Inc. Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising same
JP4324387B2 (ja) * 2003-01-31 2009-09-02 シャープ株式会社 酸化物半導体発光素子
KR100476567B1 (ko) * 2003-09-26 2005-03-17 삼성전기주식회사 질화물 반도체 소자
US7115908B2 (en) * 2004-01-30 2006-10-03 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced polarization fields
JP2007059756A (ja) * 2005-08-26 2007-03-08 Rohm Co Ltd 半導体発光素子
JP2007305965A (ja) * 2006-04-14 2007-11-22 Toyoda Gosei Co Ltd 発光素子およびこれを用いた通信装置
DE102007046027A1 (de) 2007-09-26 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einer Mehrfachquantentopfstruktur
EP3525301B1 (de) * 2007-12-28 2021-11-03 Avago Technologies International Sales Pte. Limited Vorrichtung mit delta-dotierter aktiver region
CN102473799A (zh) * 2009-07-09 2012-05-23 加利福尼亚大学董事会 用于改良在非极性或半极性(Ga，Al，In，B)N衬底上生长的(Ga，Al，In，B)N激光二极管的镜面刻面劈裂产率的结构
DE102009040438A1 (de) * 2009-07-24 2011-01-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit einer Quantentopfstruktur
DE102009060747A1 (de) * 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterchip
DE102010009457A1 (de) * 2010-02-26 2011-09-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US8897329B2 (en) * 2010-09-20 2014-11-25 Corning Incorporated Group III nitride-based green-laser diodes and waveguide structures thereof
US8669585B1 (en) * 2011-09-03 2014-03-11 Toshiba Techno Center Inc. LED that has bounding silicon-doped regions on either side of a strain release layer

Also Published As

Publication number Publication date
CN107004739B (zh) 2020-03-20
JP2017524252A (ja) 2017-08-24
WO2016020348A1 (de) 2016-02-11
CN107004739A (zh) 2017-08-01
US20170222087A1 (en) 2017-08-03
US9818910B2 (en) 2017-11-14
JP6551705B2 (ja) 2019-07-31
DE102014111058A1 (de) 2016-02-04

Similar Documents

Publication Publication Date Title
DE112016002417A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112014002391A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
BR112016023105A2 (pt) escalonamento de processos e métodos
DE112016000691A5 (de) Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE102014017707A8 (de) Beschichtungsverfahren und entsprechende Beschichtungsanlage
DE112015005232A5 (de) Bauelement und verfahren zur herstellung eines bauelements
DE112015004073A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE112015004443A5 (de) Photonisch integrierter Chip, optisches Bauelement mit photonisch integriertem Chip und Verfahren zu deren Herstellung
PL3023308T3 (pl) Element okładziny wewnętrznej oraz sposób jego wytwarzania
DE112015005495A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE112015004631A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112014004347A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE112015000888A5 (de) Verfahren zur Herstellung optoelektronischer Halbleiterbauteile und optoelektronisches Halbleiterbauteil
DE112015001999A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE112015003591A5 (de) Elektronisches Bauelement, optoelektronisches Bauelement, Bauelementeanordnung und Verfahren zur Herstellung eines elektronischen Bauelements
DE112014001638A5 (de) Laserbauelement und Verfahren zu seiner Herstellung
DE112013006179A5 (de) Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE112015005446A5 (de) Konversionselement, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung von Konversionselementen
DE112015004068A5 (de) Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements
DE112015005127A5 (de) Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102014102565A8 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE112015001351A5 (de) Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen
DE112015003629A5 (de) Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
DE112015002558A5 (de) Organisches optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE112015005473A5 (de) Strahlungsemittierendes optoelektronisches Halbleiterbauteil und Verfahren zu dessen Herstellung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R016 Response to examination communication
R002 Refusal decision in examination/registration proceedings
R003 Refusal decision now final