CN1647232A - Image display apparatus and its manufacturing method - Google Patents
Image display apparatus and its manufacturing method Download PDFInfo
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- CN1647232A CN1647232A CNA03807592XA CN03807592A CN1647232A CN 1647232 A CN1647232 A CN 1647232A CN A03807592X A CNA03807592X A CN A03807592XA CN 03807592 A CN03807592 A CN 03807592A CN 1647232 A CN1647232 A CN 1647232A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/028—Mounting or supporting arrangements for flat panel cathode ray tubes, e.g. spacers particularly relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/18—Assembling together the component parts of electrode systems
- H01J9/185—Assembling together the component parts of electrode systems of flat panel display devices, e.g. by using spacers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/863—Spacing members characterised by the form or structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/865—Connection of the spacing members to the substrates or electrodes
- H01J2329/8655—Conductive or resistive layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8625—Spacing members
- H01J2329/865—Connection of the spacing members to the substrates or electrodes
- H01J2329/866—Adhesives
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
Abstract
A first substrate (10) having an image display face and a second substrate opposite to the first substrate with a gap and provided with electron sources (18) which excite the image display face are comprised. Spacers (30a, 30b) which support the atmospheric load acting on first and second substrates are provided between the first and second substrates. A conductor (33), which repels the electron beam emitted from the electron source, is provided between the side front end of the spacer on the second substrate side and the second substrate.
Description
Technical field
The present invention relates to a kind of image display device and its manufacture method that has the substrate of relative configuration and be arranged on a plurality of electron sources on the substrate inner face.
Background technology
In the last few years, needed high-quality to play or follow this high-resolution image display device,, wished strict more performance for this screen display performance.In order to realize this hope, must make screen cover planarization, high-resolution, must realize in light weight, slimming simultaneously.
As the image display device of realizing above-mentioned hope, pay close attention to the flat display apparatus of electroluminescent display (hereinafter being called FED) for example etc.This FED has gap according to the rules the 1st substrate and the 2nd substrate of configuration relatively, and these substrates constitute vacuum envelope by being bonded with each other directly or by rectangular box-like sidewall between its circumference.Form luminescent coating at the inner face of the 1st substrate,, be provided with and a plurality ofly emit element as above-mentioned luminescent coating of excitation and the electronics that makes it luminous electron source at the inner face of the 2nd substrate.
And, for the atmospheric load of supporting role on the 1st substrate and the 2nd substrate, between described substrate, be provided as a plurality of pads of support component.In this FED, when display image, on luminescent coating, apply anode voltage.Emit the electron beam that element emits from electronics and quicken, collide, make light-emitting phosphor and display image with luminescent coating by anode voltage.
In this FED, the size that electronics is emitted element is the micron number magnitude, the interval of the 1st substrate and the 2nd substrate can be set at the millimeter magnitude.Thereby, compare with the cathode ray tube (hereinafter being called CRT) that uses as the display that has television set and computer now, can realize high-resolution, lightweight, the slimming of image display device.
In above-mentioned image display device, in order to obtain practical display characteristic, use the fluorophor identical with common CRT, wish that anode voltage is set in more than several kV.But from characteristic, the manufacturing equal angles of resolution and support component, the gap between the 1st substrate and the 2nd substrate can not be too big, must be set in 1～2 millimeter degree.Thereby, emit 2 electronics and reflection electronics that produced when electron beam that element emits conflicts with the face on being formed on the 1st substrate and the pad that is arranged between the substrate collides from electronics, thereby described pad is charged.Because the accelerating voltage among the described FED, gasket strip positive electricity is usually emitted the electron beam that element emits from electronics and is attracted on the pad, deviates from original track.Thereby producing the miscontacting of screen of electron beam with respect to luminescent coating, the problem of the colorimetric purity deterioration of display image appears.
In order to reduce of the attraction of this pad to electron beam, consider on all or part of of gasket surface, to implement conductive processing, eliminate pad with.But when pad self was implemented conductive processing, causing by pad increased from the idle current of the 1st flow of substrates to the 2nd substrate, and temperature raises and power consumption increases.
Summary of the invention
Propose the present invention in view of the above problems, the purpose of this invention is to provide a kind of image display device and manufacture method thereof, can not cause that temperature raises and power consumption increases, can prevent the electron beam trace skew, improve picture quality.
To achieve these goals, image display device according to the invention comprises the 1st substrate with picture display face; Keep the relative configuration in certain interval ground with above-mentioned the 1st substrate, be provided with 2nd substrate of ejected electron simultaneously with a plurality of electron sources that above-mentioned picture display face is encouraged; Be arranged between above-mentioned the 1st substrate and the 2nd substrate a plurality of pads of the atmospheric load of supporting role on the 1st substrate and the 2nd substrate; Be separately positioned between above-mentioned the 2nd substrate-side front end and the 2nd substrate of above-mentioned pad the electric conductor that the electron beam of emitting from above-mentioned electron source is repelled.
And a kind of manufacturing method of anm image displaying apparatus according to the invention is following manufacturing method of anm image displaying apparatus, and this image display device comprises the 1st substrate with picture display face; Keep the relative configuration in certain interval ground with above-mentioned the 1st substrate, be provided with 2nd substrate of ejected electron simultaneously with a plurality of electron sources that above-mentioned picture display face is encouraged; Be arranged between above-mentioned the 1st substrate and the 2nd substrate, a plurality of pads of the atmospheric load of supporting role on the 1st substrate and the 2nd substrate, this method comprises the steps:
Electric conductor is arranged between the front end of above-mentioned the 2nd substrate-side of the assigned position of the 2nd substrate and above-mentioned pad; Dispose under the state of above-mentioned pad at the above-mentioned electric conductor of front end clamping of its 2nd substrate-side and with the 2nd substrate contacts ground, the above-mentioned the 1st and the 2nd substrate is mutually combined.
If adopt the image display device of said structure, the electronics of emitting near the electron source that is positioned at the pad is in case the electric field repulsion that is formed by electric conductor, after forming track along the direction of leaving from pad, then attracted and form track to direction near pad by pad.Because this attraction and repulsion, the skew of electron trajectory is cancelled out each other, and the electronics of emitting from electron source finally arrives the target location of picture display face.Thereby the image display device that obtains has reduced the colorimetric purity decline that is caused by the electronics miscontacting of screen and has improved picture quality.
Description of drawings
Fig. 1 is the stereogram that shows the SED that meets the invention process form;
Fig. 2 dissects the above-mentioned SED stereogram that is obtained along II-II line among Fig. 1;
Fig. 3 is the cross-sectional view after above-mentioned SED is amplified;
Fig. 4 amplifies the cross-sectional view that the back shows to the SED key position that meets the present invention's the 2nd example;
Fig. 5 amplifies the cross-sectional view that the back shows to the SED key position that meets the present invention's the 3rd example.
Embodiment
The hereinafter with reference accompanying drawing is at being suitable for a kind of as among the FED of plane portrait display unit, and just the example of surface conductive type electronics discharge device (SED hereinafter referred to as) describes in detail to the present invention.
Shown in Fig. 1～3, this SED comprises the 1st substrate 10 and the 2nd substrate of being made up of rectangular glass respectively as transparent insulation substrate 12.Described these substrates are oppositely arranged, and the gap is 1.0～2.0 millimeters between the two, and ratio the 1st substrate 10 that the 2nd substrate 12 forms is big slightly.Thereby the 1st substrate 10 and the 2nd substrate 12 are bonded to each other in the peripheral part by the rectangular side wall be made up of glass 14, constitute flat rectangular vacuum shell 15.
At the inner face of the 1st substrate 10, form phosphor screen 16 as picture display face.Send luminescent coating R, G, B and black light shield layer 11 red, blue, green glow by arrangement by tyco electronics and constitute phosphor screen 16.Described luminescent coating R, G, B form striated or net-point shape.On phosphor screen 16, form the metal lining 17 formed by aluminium etc. and getter film not shown in the figures.And, nesa coating or the colour transition filter membrane be made up of ITO etc. also can be set between the 1st substrate 10 and phosphor screen.
On the inner face of the 2nd substrate 12, as the electron source of the luminescent coating of activating fluorescent body screen 16, the surface conductive type electronics that emit electron beam is set is emitted element 18.This electronics is emitted element 18 and is disposed according to multiple row and multirow ground corresponding to each pixel.Each electronics emit element 18 by electronics not shown in the figures emit portion, a pair of element electrode from voltage to this electronics portion of emitting that apply etc. constitutes.A plurality of distributions 21 of emitting element 18 supply electromotive forces to electronics are arranged on the inner face of the 2nd substrate 12 rectangularly, and draw from the outside of vacuum envelope 15 its end.
The sidewall 14 that plays a role as bonded block for example on the circumference of the circumference of the 1st substrate 10 and the 2nd substrate 12 by material 20 envelopes of sealing such as low melting point glass, low melting point metal etc., and the 1st substrate 10 and the 2nd substrate 12 are combined togather.
And shown in Fig. 2 and 3, SED comprises the escapement 22 that is arranged between the 1st substrate 10 and the 2nd substrate 12.Escapement 22 is by tabular grid 24, whole upright a plurality of column pads of establishing etc. constitute on this grid two sides.
Introduce in detail, grid 24 has 1st surperficial 24a relative with the inner face of the 1st substrate 10 and the 2nd surperficial 24b relative with the inner face of the 2nd substrate 12, and be arranged in parallel with these substrates.On grid 24, form a plurality of electron beam through-holes 26 and a plurality of pad perforate 28 by etching.The electron beam through-hole 26 that plays a role as perforate of the present invention is emitted element 18 with electronics separately and is oppositely arranged, and emits the electron beam that element emits from electronics and passes hole 26.In addition, pad perforate 28 is arranged on electron beam according to preset space length and passes between the described hole 26.
Electron beam passes the rectangle that hole 26 for example is formed 0.15～0.25 millimeter * 0.15～0.25 millimeter.It approximately is 0.2～0.5 millimeter circular hole that pad perforate 28 forms diameter.And above-mentioned high impedance film also is formed on the wall that the electron beam that is arranged on the grid 24 passes hole 26.
The 1st pad 30a overlaps integrally upright being located on the 1st surperficial 24a of grid 24 with each pad perforate 28.Indium coating layer on the elongated end of each the 1st pad 30a constitutes the relaxation layer 31 that relaxes the pad height tolerance.Thereby the elongated end of each the 1st pad 30a contacts with the inner face of the 1st substrate 10 by the light shield layer 11 of relaxation layer 31, getter film, metal lining 17 and phosphor screen 16.The track of 31 pairs of electron beams of relaxation layer is without any influence.As long as keep having suitable hardness, be not limited to metal to the alleviation effects of pad height tolerance.And the black light shield layer 11 of metal lining 17 and phosphor screen 16 also has the effect of the height tolerance that relaxes pad.Fully relaxing under the situation of height tolerance, also relaxation layer 31 can be set thus.
Overlap with each pad perforate 28 on the 1st surperficial 24b of grid 24 and integrally uprightly establish the 2nd pad 30b, its elongated end contacts with the inner face of the 2nd substrate 12.The elongated end of each the 2nd pad 30b is positioned on the distribution 21 on the inner face that is arranged on the 2nd substrate 12, between this distribution 21 and the 2nd pad elongated end electric conductor 33 is set simultaneously.Electric conductor 33 forms the elongated end approximate shapes with the 2nd pad 30b, and its thickness just for example is set to 120 μ m along the height with the 2nd substrate vertical direction.
As mentioned below, the effect of emitting the electron beam that element 18 emits from electronics is repelled in electric conductor 33 performance to the direction of leaving from the 2nd pad 30b.Electric conductor 33 is for example formed by platinum, tungsten, iridium, rhenium, osmium, the contour melting point metal of ruthenium, their alloy or the conductive glass that contains these metals etc.As electric conductor 30, also can use metals such as indium, aluminium, silver, copper, when producing discharge, if melt temperature is low and fusion, probably can not bring into play original function, so wish to use the metal of high melting point.
Shape to electric conductor 33 has no particular limits, and still, considers discharge, wishes that across corner carries out chamfering.Under the situation of the track revisal amount of considering the repulsive force that gives electron beam, electron beam, set the height of electric conductor 33 arbitrarily.
The the 1st and the 2nd pad 30a, 30b form to such an extent that the thin taper of front end that elongated end direction diameter diminishes from grid 24 side direction.For example to form at the diameter of the cardinal extremity that is positioned at grid 24 sides approximately be 0.4 millimeter to each the 1st pad 30a, and the diameter of elongated end approximately is 0.3 millimeter, highly approximately is 0.6 millimeter.For example to form at the diameter of the cardinal extremity that is positioned at grid 24 sides approximately be 0.4 millimeter to each the 2nd pad 30b, and the diameter of elongated end approximately is 0.25 millimeter, highly approximately is 0.8 millimeter.Thereby the height of ratio the 2nd pad 30b that the height of the 1st pad 30a forms is little, and the height setting of the 2nd pad 30b must be 4/3 times of height of the 1st pad 30a.
The surface impedance of the 1st and the 2nd pad 30a, 30b is 5 * 10
13Ω.Each pad perforate 28 and the 1st and the 2nd pad 30a, 30b align mutually, and the 1st and the 2nd pad 30a, 30b interconnect by this pad perforate 28 and be integral.Thus, the 1st and the 2nd pad 30a, 30b are integrally formed with grid 24 under the state of two sides clamping grid 24.
Above-mentioned such escapement that constitutes 22 is arranged between the 1st substrate 10 and the 2nd substrate 12.Thereby, contacting by inner face with the 1st substrate 10 and the 2nd substrate 12, the 1st and the 2nd pad 30a, the 30b supporting role atmospheric pressure load on substrate is being stipulated the distance maintaining between the substrate on the numerical value.
As shown in Figure 2, SED comprises that the metal lining 17 to grid 24 and the 1st substrate 10 applies the voltage supply unit 50 of voltage.Voltage supply unit 50 links to each other with metal lining 17 with grid 24 respectively, for example applies 12kV, applies 10kV voltage to metal lining 17 to grid 24.Just be applied to voltage ratio on the grid 24 and be applied to voltage height on the 1st substrate 10, for example the voltage that is applied on the 1st substrate 10 of the ratio of She Dinging is high 1.25 times.
In above-mentioned SED, when display image, apply voltage to phosphor screen 16 and metal lining 17, emit the electron beam B that element 18 emits from electronics and quicken to conflict with phosphor screen 16 by anode voltage.Thus, the luminescent coating on the activating fluorescent body screen 16, luminous and display image.
Hereinafter introduce the manufacture method of the SED with said structure.When making escapement 22, at first consider the 1st and the 2nd metal die that has same size and rectangular plate shape not shown in the figures with the grid of given size, with this grid.At this moment, the thickness of slab of being made up of Fe-50%Ni is that 0.12 millimeter thin plate carries out degreasing, cleans, after the drying, forms electron beam through-hole 26 and pad perforate 28 by etching, formation grid 24.Then, make whole gate oxidation, on the gate surface of the inner face that comprises electron beam through-hole 26 and pad perforate 28, carry out dielectric film by oxidation processes.In addition, on dielectric film, spraying is dispersed with the liquid of tin oxide and antimony oxide, is covered, dry, sintering and form the high impedance film.
The the 1st and the 2nd metal has a plurality of through holes corresponding to the pad perforate 28 of mould grid 24.In addition, in the 1st and the 2nd metal die, on the inner face corresponding to a plurality of through holes of pad perforate 28 at least, the resin of coating thermal decomposition by heat treatment.
Thereby, alignedly under the positioning states, the 1st metal die is contacted closely with the 1st surperficial 24a of grid in the pad perforate 28 of each through hole and grid 24.Equally, alignedly under the positioning states, the 2nd metal die is contacted in the pad perforate 28 of each through hole and grid 24 closely with the 2nd surperficial 24b of grid.By clamper not shown in the figures etc. the 1st metal die, grid 24 and the 2nd metal die are fixed.
Supply with the pad formation material of pasty state then from the exterior side of the 1st metal die, form material to the through hole of the 1st metal die, the pad perforate 28 of grid 24 and the through hole joint sheet of the 1st metal die.Form material as pad, use the glass paste that contains UV cured type adhesive (organic principle) and glass filler at least.
Then, form material,, make pad form material UV sclerosis from the exterior side irradiation of the 1st and the 2nd mould ultraviolet ray (UV) as radioactive ray for the pad of filling.Then, can carry out thermmohardening as required.Then, by heat treatment the resin in each through hole that is coated on the 1st and the 2nd mould is carried out thermal decomposition, pad forms and occurs little gap between material and the metal die, and the 1st and the 2nd mould is peeled off from grid 24.
Then, in heating furnace, heat-treat being filled with the grid 24 that pad forms material, from pad form blow out adhesive in the material after, under about 500～550 ℃, pad is formed material and fired 30 minutes～1 hour.Thereby, on grid 24, obtain to make the escapement 22 that the 1st and the 2nd pad 30a, 30b are arranged.
Consider in advance on the one hand, be provided with the 1st substrate of phosphor screen 16 and metal lining 17 and be provided with electronics and emit the 2nd substrate 12 that element 18 and distribution 21 and while combine with sidewall 14.
Then on the distribution 21 of the 2nd substrate 12, be the conductive paste of 120 μ m with front end approximate shapes print thickness with the 2nd pad 30b after, by drying and sintering, on the assigned position on the distribution 21, form electric conductor 33.And coating is used to form the highly indium powder of relaxation layer on the elongated end of each the 1st pad 30a.
Escapement 22 location that will have said structure then are arranged on the 2nd substrate 12.At this moment, the elongated end of the 2nd pad 30b and each electric conductor 33 are determined the position of escapement 22 contiguously.Under this state, the 1st substrate the 10, the 2nd substrate 12 and escapement 22 are arranged in the vacuum chamber, this vacuum chamber is carried out vacuum exhaust after, combine with the 1st and the 2nd substrate by sidewall 14.Simultaneously, make the indium powder melts that is arranged on the 1st pad 30a elongated end, by 10 pushings of the 1st substrate, to highly carrying out revisal.Thereby, make the SED that comprises escapement 22.
If adopt the SED of said structure, as shown in Figure 3, emit the electron beam B that element 18 is emitted near the electronics that is positioned at the 2nd pad 30b, the electric field that is formed by the conductor layer 33 between elongated end that is arranged on the 2nd pad 30b and the 2nd substrate 12 repels, while form track towards electron beam through-hole 26 to the direction of leaving from the 2nd pad.Then, electron beam B is attracted to the 2nd charged pad 30b and the 1st pad 30a, chooses the track near this pad direction.Thereby by above-mentioned attraction and repulsion, the course deviation of electron beam B is cancelled out each other, and emitting from electronics that electron beam B that element 18 emits finally arrives with phosphor screen 16 is the luminescent coating of target.
Specifically, it is short more to the distance of pad side to emit element from electronics, and electron beam is big more to the mobile quantity of pad side, and on the contrary, when emitting element from electronics to the distance of pad side when very big, electron beam can be ignored to the mobile quantity of pad side.Generation that the mobile phenomenon of electron beam is conflicted with pad by 2 electronics that take place in the face and reflection electronic and pad is charged etc.At this moment, emit coefficient greater than 1 from the accelerating voltage that uses at 2 electronics of gasket surface among SED, pad sidewall positively charged arrives the pad side with direct electron beams.
In this example, between the 2nd substrate side of the smaller pad of velocity of electrons and the 2nd substrate, electric conductor 33 is set, by this electric conductor 33, electron beam forms the electric field that repels direction with pad.Height by control electric conductor 33 changes electric field strength, can control the repulsion amount.Thereby in this example, because the charged of pad can not escape, by attraction that is caused by pad and the repulsion that is caused by electric conductor 33, the course deviation of electron beam is cancelled out each other.Thereby, if adopt above-mentioned SED, there is no need to be provided with and be used to complex mechanism that electron beam is brought together the electron gun that resembles among the CRT.
Thereby if adopt above-mentioned SED, the 1st and the 2nd pad 30a, 30b are charged, even when attracting electron beam B by pad, also can prevent the electron beam trace skew.Thereby, prevent the miscontacting of screen of electron beam B, thereby, can reduce colorimetric purity and descend, improve picture quality.
When all or part of of gasket surface carried out direct conductive processing, increase to the idle current that the 2nd substrate flows from the 1st substrate by pad, cause that temperature rises, power consumption increases.And this conductive processing portion becomes gas and produces the source in the SED action, also causes the bombardment by ions that is positioned near the electron source the pad.At this situation, if select this example for use, idle current increase, temperature rising, power consumption increase and bombardment by ions can not appear, by the electric field of electric conductor 33 change pad peripheries, the track of controlling electron beam easily.
Consider the SED meet the SED of this example and above-mentioned electric conductor 33 is not set, the amount of movement of electron beam is compared.Thereby in the SED that above-mentioned electric conductor 33 is not set, electron beam approximately moves 120 μ m to the pad side, and in meeting the SED of this example, the amount of movement of electron beam almost is 0, has improved the colorimetric purity of display image.
And, if adopt above-mentioned SED, between the 1st substrate 10 and the 2nd substrate 12, grid 24 being set, the height of ratio the 2nd pad 30b of the height of the 1st pad 30a formation simultaneously is low.Thus, compare grid 24 more close the 1st substrate 10 sides with the 2nd substrate 12.Even thereby,, can contain that the electronics that is arranged on the 2nd substrate 12 emits the discharge breakage of element 18 by grid 24 in the occasion that produces discharge from the 1st substrate 10 sides.Thereby, can obtain SED at discharge resistance to pressure excellent images quality.
If select the SED of said structure for use, the height of ratio the 2nd pad 30b that height by the 1st pad 30a forms is low, even be applied under the big situation of voltage on the 1st substrate 10 being applied to voltage ratio on the grid 24, also can make and emit the electronics that element 18 produces from electronics and arrive the phosphor screen side reliably.
And, even when deviation appears in the height of a plurality of the 1st pad 30a, absorb above-mentioned deviation by height relaxation layer 31, a plurality of the 1st pads are contacted reliably with the 1st substrate 10.Thereby by the 1st and the 2nd pad 30a, 30b, the interval between the 1st substrate 10 and the 2nd substrate 12 can keep constant at gamut almost.
Hereinafter introduce the SED of the present invention's the 2nd example.As shown in Figure 4, if adopt the 2nd example, electric conductor 33 by metal or alloy form with the 2nd pad 30b elongated end similar shape.For example, the thickness that electric conductor 33 is made up of Fe-50%Ni is that 200 μ m metallic plates are made, and is fixed on the distribution 21 of the 2nd substrate 12 by the fixed bed of being made up of conductive glass material, conductive adhesive etc. 40.Thereby escapement 22 is arranged between the 1st substrate 10 and the 2nd substrate 12 under the elongated end and electric conductor 33 contact conditions of each the 2nd pad 30b.
In addition, other structure is identical with the 1st example, represents identical part with identical Reference numeral, omits the detailed introduction to it.
When manufacturing meets the SED of above-mentioned such the 2nd example that constitutes,, form the 1st substrate 10 and the 2nd substrate 12 and escapement 22 by the operation identical with the 1st example.At this moment, the height of the 1st pad 30a is 0.2 millimeter, and the height of the 2nd pad 30b is 1.0 millimeters.
Then, on the assigned position on the distribution 21 of the 2nd substrate 12, the thickness of the front end approximate shapes of coating and the 2nd pad 30b is 5 conductivity solid, forms fixed bed 40.Thereby, be the electric conductor 33 of 200 μ m at the thickness that mounting on the fixed bed 40 is made up of Fe-50%Ni after, make the fixed bed drying, electric conductor 33 is anchored on the distribution.
Then, identical with the 1st example, the location is provided with escapement 22 on the 2nd substrate 12.At this moment, the elongated end of the 2nd pad 30b positions escapement 22 contiguously with electric conductor 33 separately.Under this state, the 1st substrate the 10, the 2nd substrate 12 and escapement 22 are arranged in the vacuum chamber, after this vacuum chamber vacuum exhaust, by sidewall 14, the 1st substrate 10 are bonded on the 2nd substrate 12, make SED thus.
If adopt the SED of said structure, can obtain the action effect identical with the 1st example.In addition, in the 2nd example, the fixed bed 40 that electric conductor 33 is fixed on the distribution 21 can be used as the revisal layer of revisal pad height tolerance.Thereby, need not high pad machining accuracy, can reduce the manufacturing cost of pad.
And, consider the SED meet the SED of the 2nd example and above-mentioned electric conductor 33 is not set, the amount of movement of electron beam is compared.Thereby in the SED that above-mentioned electric conductor is not set, electron beam approximately moves 150 μ m to the pad side, and in meeting the SED of this example, the amount of movement of electron beam almost is 0, has improved the colorimetric purity of display image.
Hereinafter introduce the SED of the present invention's the 3rd example.As shown in Figure 5, if adopt the 3rd example, electric conductor 33 by metal or alloy form with the 2nd pad 30b elongated end similar shape.For example, the thickness that electric conductor 33 is made up of Fe-50%Ni is that 200 μ m metallic plates are made, and is fixed on the 2nd pad 30b elongated end by the fixed bed of forming such as the bond of frit 42.Escapement 22 is arranged between the 1st substrate 10 and the 2nd substrate 12 under the elongated end of each the 2nd pad 30b and distribution 21 contact conditions on the 2nd substrate.
In addition, other structure is identical with the 1st example, represents identical part with identical Reference numeral, omits the detailed introduction to it.
When manufacturing meets the SED of above-mentioned such the 3rd example that constitutes,, form the 1st substrate the 10, the 2nd substrate 12 and escapement 22 by the operation identical with the 1st example.At this moment, the height of the 1st pad 30a is 0.2 millimeter, and the height of the 2nd pad 30b is 1.0 millimeters.
Then, merge glass, form fixed bed 42 in the front end coating of each the 2nd pad 30b of escapement 22.Thereby, be the electric conductor 33 of 200 μ m at the thickness that mounting on the fixed bed 42 is made up of Fe-50%Ni after, by fixed bed is carried out drying, sintering, electric conductor 33 is anchored on the front end of the 2nd pad 30b.
Escapement 22 location are arranged on the 2nd substrate 12.At this moment, the elongated end of having fixed the 2nd pad 30b of electric conductor 33 lays respectively on the distribution 21 of the 2nd substrate 12 escapement 22 is positioned.Under this state, the 1st substrate the 10, the 2nd substrate 12 and escapement 22 are arranged in the vacuum chamber, this vacuum chamber is carried out vacuum exhaust after, by sidewall 14, the 1st substrate 10 is bonded on the 2nd substrate 12, make SED thus.
If adopt the SED of said structure, can obtain the action effect identical with the 1st example.In addition, in the 3rd example, the fixed bed 42 that electric conductor 33 is fixed on the front end of the 2nd pad can be used as the revisal layer of revisal pad height tolerance.Thereby, need not high pad machining accuracy, can reduce the manufacturing cost of pad.
And, consider the SED meet the SED of the 3rd example and above-mentioned electric conductor 33 is not set, the amount of movement of electron beam is compared.Thereby in the SED that above-mentioned electric conductor is not set, electron beam approximately moves 150 μ m to the pad side, and in meeting the SED of this example, the amount of movement of electron beam almost is 0, has improved the colorimetric purity of display image.
The present invention is not limited to above-mentioned example, can carry out various distortion within the scope of the invention.For example the present invention is not limited to comprise the image display device of grid, also goes for not comprising the image display device of grid.At this moment, use integrally formed respectively column or plate gasket, between the 2nd substrate-side front end and the 2nd substrate that electric conductor are arranged on each pad, also can obtain above-mentioned action effect.
And in the present invention, the size of the diameter of pad and height, other inscape, material etc. can compatibly be selected as required.In addition, in above-mentioned example, electric conductor is arranged between the distribution and pad front end on the 2nd substrate, but is not limited on the distribution.Emit on the position of components at the avoidance electronics, also can be arranged between the 2nd substrate and the pad front end.
Electron source is not limited to surface conductive type electronics and emits element, also goes for electric field and emits type, uses electronics to be released to any kind of the FED composition of the electron source in carbon nanotube (カ-ボ Application Na ノ チ ユ-Block) equal vacuum.
Usability on the industry
As mentioned above, if select the present invention, provide a kind of image display device and manufacture method thereof, can not Cause that temperature raises and power consumption increases, can prevent the electron beam trace skew, improve picture quality.
Claims (13)
1. an image display device comprises
The 1st substrate with picture display face;
Keep the relative configuration in certain interval ground with above-mentioned the 1st substrate, be provided with 2nd substrate of ejected electron simultaneously with a plurality of electron sources that above-mentioned picture display face is encouraged;
Be arranged between above-mentioned the 1st substrate and the 2nd substrate a plurality of pads of the atmospheric load of supporting role on the 1st substrate and the 2nd substrate; And
Be separately positioned between above-mentioned the 2nd substrate-side front end and the 2nd substrate of above-mentioned pad the electric conductor that the electron beam of emitting from above-mentioned electron source is repelled.
2. an image display device comprises
The 1st substrate with picture display face;
Keep the relative configuration in certain interval ground with above-mentioned the 1st substrate, be provided with 2nd substrate of ejected electron simultaneously with a plurality of electron sources that above-mentioned picture display face is encouraged;
Be arranged between above-mentioned the 1st substrate and the 2nd substrate, have the tabular grid of a plurality of perforates that the electronics of emitting from above-mentioned electron source can pass through;
Be defined in and be arranged between above-mentioned the 1st substrate and the 2nd substrate a plurality of pads of the atmospheric load of supporting role on the 1st substrate and the 2nd substrate on the above-mentioned grid simultaneously; And
Be separately positioned between above-mentioned the 2nd substrate-side front end and the 2nd substrate of above-mentioned pad the electric conductor that the electron beam of emitting from above-mentioned electron source is repelled.
3. image display device as claimed in claim 1 or 2 is characterized in that,
Sintering conductive paste and form above-mentioned electric conductor.
4. image display device as claimed in claim 1 or 2 is characterized in that,
Above-mentioned electric conductor is formed by metallic plate or alloy sheets.
5. as image display device as described in the claim 4, it is characterized in that,
Above-mentioned electric conductor is fixed on above-mentioned the 2nd substrate by the conductivity fixed bed.
6. as image display device as described in the claim 4, it is characterized in that,
Above-mentioned electric conductor is fixed on above-mentioned the 2nd substrate-side front end of above-mentioned pad by the conductivity fixed bed.
7. image display device as claimed in claim 1 or 2 is characterized in that,
Above-mentioned electric conductor has above-mentioned the 2nd substrate-side front end similar shape with above-mentioned pad.
8. image display device as claimed in claim 1 or 2 is characterized in that,
Above-mentioned electron source is a surface conductive type electron source.
9. image display device as claimed in claim 1 or 2 is characterized in that,
Comprise to many distributions that are arranged on the above-mentioned electron source supply current potential on above-mentioned the 2nd substrate;
Above-mentioned each electric conductor is arranged on the above-mentioned distribution.
10. manufacturing method of anm image displaying apparatus, described image display device comprises the 1st substrate with picture display face; Keep the relative configuration in certain interval ground with above-mentioned the 1st substrate, be provided with 2nd substrate of ejected electron simultaneously with a plurality of electron sources that above-mentioned picture display face is encouraged; Be arranged between above-mentioned the 1st substrate and the 2nd substrate, a plurality of pads of the atmospheric load of supporting role on the 1st substrate and the 2nd substrate is characterized in that, comprise the steps:
Electric conductor is arranged between the front end of above-mentioned the 2nd substrate-side of the assigned position of the 2nd substrate and above-mentioned pad;
Dispose under the state of above-mentioned pad at the above-mentioned electric conductor of front end clamping of its 2nd substrate-side and with the 2nd substrate contacts ground, the above-mentioned the 1st and the 2nd substrate is mutually combined.
11. as manufacturing method of anm image displaying apparatus as described in the claim 10, it is characterized in that,
The operation that above-mentioned electric conductor is set is printing and the above-mentioned pad front end shape conductive paste of similar shape almost on the desired location on above-mentioned the 2nd substrate, and carries out sintering.
12. as manufacturing method of anm image displaying apparatus as described in the claim 10, it is characterized in that,
The operation that above-mentioned electric conductor is set is to form the fixed bed with conductivity on the desired location on above-mentioned the 2nd substrate, on this fixed bed, mounting form by the metal or alloy plate and to the almost similar electric conductor of above-mentioned pad front end shape, and fix.
13. as manufacturing method of anm image displaying apparatus as described in the claim 10, it is characterized in that,
The operation that above-mentioned electric conductor is set is to form the fixed bed with insulating properties on the front end of above-mentioned the 2nd substrate, by this fixed bed, fixing by the metal or alloy plate form and to the almost similar electric conductor of above-mentioned pad front end shape.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002101575A JP2003297265A (en) | 2002-04-03 | 2002-04-03 | Image display device and method of manufacturing the same |
| JP101575/2002 | 2002-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1647232A true CN1647232A (en) | 2005-07-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA03807592XA Pending CN1647232A (en) | 2002-04-03 | 2003-03-31 | Image display apparatus and its manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1492150A1 (en) |
| JP (1) | JP2003297265A (en) |
| KR (1) | KR20040095351A (en) |
| CN (1) | CN1647232A (en) |
| TW (1) | TW200400530A (en) |
| WO (1) | WO2003088300A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050156507A1 (en) | 2002-09-27 | 2005-07-21 | Shigeo Takenaka | Image display device, method of manufacturing a spacer for use in the image display device, and image display device having spacers manufactured by the method |
| JP2004119296A (en) * | 2002-09-27 | 2004-04-15 | Toshiba Corp | Image display device, manufacturing method of spacer used for image display device and image display device equipped with spacer manufactured by this method |
| JP2005197048A (en) * | 2004-01-06 | 2005-07-21 | Toshiba Corp | Image display device and its manufacturing method |
| KR20050096536A (en) * | 2004-03-31 | 2005-10-06 | 삼성에스디아이 주식회사 | Electron emission display with grid electrode |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3703287B2 (en) * | 1997-03-31 | 2005-10-05 | キヤノン株式会社 | Image forming apparatus |
| JP2000251785A (en) * | 1999-02-24 | 2000-09-14 | Canon Inc | Electron beam device, and image display device |
| KR100455681B1 (en) * | 2000-03-23 | 2004-11-06 | 가부시끼가이샤 도시바 | Spacer assembly for flat panel display apparatus, method of manufacturing spacer assembly, method of manufacturing flat panel display apparatus, flat panel display apparatus, and mold used in manufacture of spacer assembly |
-
2002
- 2002-04-03 JP JP2002101575A patent/JP2003297265A/en active Pending
-
2003
- 2003-03-28 TW TW092107151A patent/TW200400530A/en unknown
- 2003-03-31 WO PCT/JP2003/004109 patent/WO2003088300A1/en not_active Application Discontinuation
- 2003-03-31 EP EP20030712989 patent/EP1492150A1/en not_active Withdrawn
- 2003-03-31 CN CNA03807592XA patent/CN1647232A/en active Pending
- 2003-03-31 KR KR10-2004-7015475A patent/KR20040095351A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20040095351A (en) | 2004-11-12 |
| JP2003297265A (en) | 2003-10-17 |
| EP1492150A1 (en) | 2004-12-29 |
| TW200400530A (en) | 2004-01-01 |
| WO2003088300A1 (en) | 2003-10-23 |
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