CN113838778B - Laser bonding device that breaks - Google Patents
Laser bonding device that breaks Download PDFInfo
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- CN113838778B CN113838778B CN202111035726.5A CN202111035726A CN113838778B CN 113838778 B CN113838778 B CN 113838778B CN 202111035726 A CN202111035726 A CN 202111035726A CN 113838778 B CN113838778 B CN 113838778B
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- 230000007246 mechanism Effects 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000001179 sorption measurement Methods 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 38
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 description 21
- 238000000926 separation method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004093 laser heating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The application provides a laser bonding-off device, which comprises a stage for holding a piece to be bonded thereon, wherein the piece to be bonded comprises a first layer structure and a second layer structure bonded through a bonding layer. Also comprises a sucker and a laser system. The sucking disc is adsorbed on the surface of the second layer structure. The laser system is used for generating laser beams which sequentially penetrate through the sucker and the second layer structure and then are focused on the bonding layer, and controlling the focus of the laser beams to scan on the bonding layer so as to debond the bonding layer. And a stretching mechanism connected with the sucker, wherein the stretching mechanism is used for upwards pulling the sucker after the laser beam scans a partial area of the bonding layer so as to separate the first layer structure from the second layer structure at a position overlapped with the partial area. The laser bonding is adopted, the sucking disc is pulled to separate the two layers, the bonding materials in a molten state are prevented from being cooled and solidified again, the two layers are prevented from being bonded again, and the stripping difficulty is reduced.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to a laser bonding-releasing device.
Background
In the process of manufacturing a wafer, the wafer needs to be temporarily bonded to a substrate because the wafer is thin, and then processes such as deposition and etching are performed on the surface of the wafer, so as to manufacture various micro-circuit structures on the surface of the wafer. After the wafer processing is completed, the wafer and the substrate need to be de-bonded so that the wafer and the substrate can be separated, and the subsequent wafer dicing process can be performed. In the prior art, a laser bonding method is generally adopted in the bonding process of bonding a wafer and a substrate. Specifically, a laser beam is focused on a bonding layer between a wafer and a substrate, and the bonding layer is scanned to heat the bonding layer so that the bonding layer is in a molten state. After scanning the entire bonding layer, laser heating is stopped and the wafer and substrate are peeled off using a transfer device with a chuck. However, after the laser stops heating, operations such as moving and adsorbing are required in the process of adsorbing the wafer by using the sucker, which takes a long time, and because the laser stops heating, a temperature drop phenomenon is inevitably caused between the wafer and the substrate, so that the bonding material in a molten state is easily cooled and solidified again, and the wafer and the substrate are adhered together again, and the stripping difficulty is increased.
Disclosure of Invention
The application provides a laser bonding-releasing device, which is used for reducing the difficulty of peeling between two layer structures in the laser bonding-releasing process and facilitating the separation of the two layer structures.
The application provides a laser bonding-off device, which comprises a carrier for holding a piece to be bonded thereon, wherein the piece to be bonded comprises a first layer structure fixed on the surface of the carrier and a second layer structure bonded through a bonding layer. The laser de-bonding device also comprises a sucker and a laser system. Wherein, the sucking disc adsorbs at the second layer structure surface. The laser system is used for generating laser beams which sequentially penetrate through the sucker and the second layer structure and then are focused on the bonding layer, and controlling the focus of the laser beams to scan on the bonding layer so as to debond the bonding layer. The laser debonding apparatus further includes a stretching mechanism coupled to the chuck for pulling the chuck upward after the laser beam scans a portion of the bonding layer to separate the first layer structure and the second layer structure at a location coincident with the portion.
In the above scheme, when the sucker is adsorbed on the surface of the second layer structure, the laser beam sequentially penetrates through the sucker and the second layer structure and then is focused on the bonding layer, and the focal point of the laser beam is controlled to scan a partial area of the bonding layer, and then the sucker is pulled upwards by the stretching mechanism, so that the two layer structures are separated at the position overlapped with the partial area, and the stripping mode of simultaneously laser de-bonding and simultaneously pulling the sucker for separation is adopted, so that the bonding materials in a molten state between the two layer structures are prevented from being re-adhered due to re-cooling and solidification, and the stripping difficulty is reduced.
In a specific embodiment, one of the first layer structure and the second layer structure is a wafer, and the other layer structure is a substrate. So as to reduce the difficulty of stripping the wafer and the substrate in the laser bonding process.
In a specific embodiment, the laser system controls the focal point of the laser beam to scan sequentially from the outer ring of the bonding layer to the inner ring in concentric circles. So that gaseous or plasma species generated during the laser debonding process are dispersed out of the two layer structure.
In a specific embodiment, the partial region is an annular region during concentric scanning of the focal point of the laser beam. So that the suction cup is pulled to separate the two layers in a circular area.
In a specific embodiment, the suction cup is provided with a suction end surface which is sucked on the surface of the second layer structure, wherein a plurality of circles of suction channels which are distributed in a concentric circle shape are arranged on the suction end surface. So that the same amount of suction is applied to the surface of the second layer structure in the same annular area.
In a specific embodiment, each adsorption channel is provided with a gas valve for controlling the negative pressure in the corresponding adsorption channel so as to adjust the suction force of the second layer structure surface to different circular ring areas.
In a specific embodiment, the first layer structure is a wafer, and the second layer structure is a substrate, so that the laser beam does not pass through the wafer in the laser bonding process, thereby preventing the micro circuit structure on the surface of the wafer from being influenced in the laser bonding process; meanwhile, the substrate is made of the same material, so that laser beams can pass through the substrate in the scanning process, and the phenomenon of uneven laser bonding temperature caused by that laser at certain positions can pass through and laser at certain positions cannot pass through due to a micro-circuit structure inside a wafer is prevented.
In a specific embodiment, the chuck is made of the same material as the substrate to facilitate selection of the laser wavelength and control of laser transmission through the chuck and substrate.
In a specific embodiment, the chuck and substrate are both quartz in material to prevent the chuck and substrate from affecting laser transmissivity.
In a specific embodiment, the laser system includes a laser, a focusing lens, and a galvanometer system. Wherein the laser is used for generating a laser beam; the focusing lens is used for receiving the laser beam and focusing the laser beam on the bonding layer; the galvanometer system is used for controlling the focus of the laser beam to scan on the bonding layer. The galvanometer system is arranged so as to control the focus of the laser beam to scan on the bonding layer.
Drawings
Fig. 1 is a schematic structural diagram of laser bonding according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a suction cup and a stretching mechanism according to an embodiment of the present application;
FIG. 3 is a schematic view of a longitudinal section of a suction cup according to an embodiment of the present application;
FIG. 4 is a schematic diagram of an adsorption path on an adsorption end surface according to an embodiment of the present application;
FIG. 5 is a schematic view of another embodiment of a chuck and stretching mechanism;
FIG. 6 is a schematic diagram of a pull rod and suction cup according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of an adsorption end surface of another sucker according to an embodiment of the present application;
FIG. 8 is a schematic diagram of an adsorption path on an adsorption end surface according to another embodiment of the present application;
FIG. 9 is a schematic side view of another suction cup according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of another stretching mechanism according to an embodiment of the present application.
Reference numerals:
10-stage 11-first layer structure 12-second layer structure 13-bonding layer
21-laser 22-focusing lens 23-galvanometer system
30-sucking disc 31-sucking end face 32-sucking channel 33-connecting end face
34-adsorption zone 35-vacuum extractor
40-stretching mechanism 41-pull rod 42-bracket 43-support arm 44-lifting mechanism
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In order to facilitate understanding of the laser bonding apparatus provided by the embodiment of the present application, an application scenario of the laser bonding apparatus provided by the embodiment of the present application is first described below, where the laser bonding apparatus is applied to a semiconductor manufacturing process and is used for bonding and peeling off two temporarily bonded layer structures. The laser debonding device will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, the laser bonding apparatus according to the embodiment of the present application includes a stage 10 for holding a to-be-bonded member thereon, wherein the to-be-bonded member includes a first layer structure 11 fixed on a surface of the stage 10, and a second layer structure 12 bonded through a bonding layer 13. The laser debonding device also includes a chuck 30 and a laser system. Wherein the suction cup 30 is attached to the surface of the second layer structure 12. The laser system is used for generating laser beams which sequentially penetrate through the sucker 30 and the second layer structure 12 and then are focused on the bonding layer 13, and controlling the focus of the laser beams to scan the bonding layer 13 so as to debond the bonding layer 13. The laser debonding apparatus further comprises a stretching mechanism 40 coupled to the suction cup 30, the stretching mechanism 40 being configured to pull the suction cup 30 upward after the laser beam scans a portion of the bonding layer 13 to separate the first layer structure 11 and the second layer structure 12 at a location coincident with the portion.
In the above-mentioned scheme, when the suction cup 30 is adsorbed on the surface of the second layer structure 12, the laser beam sequentially passes through the suction cup 30 and the second layer structure 12 and then is focused on the bonding layer 13, and after the focal point of the laser beam is controlled to scan a partial area of the bonding layer 13, the stretching mechanism 40 pulls up the suction cup 30, so that the two layer structures are separated at the position overlapping with the partial area, and the separation mode of pulling the suction cup 30 is adopted while laser bonding is performed, so that the two layer structures are prevented from being adhered again due to the re-cooling and solidification of the bonding material in a molten state, thereby reducing the separation difficulty. Each structure is described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the stage 10 serves as a support structure for holding a part to be released thereon. When set up, a table body having a support end surface may be provided as the stage 10. And a plurality of suction holes may be provided on the support end surface of the stage 10, the plurality of suction holes being sucked to the surface of the first layer structure 11 in the member to be debonded, to fix the first layer structure 11 on the stage 10. Of course, other fastening means capable of holding the first layer 11 thereon may also be used.
Referring to fig. 1, the laser debonding apparatus further includes a laser system for generating a laser beam and focusing on the bonding layer 13 of the piece to be bonded to heat the bonding layer 13, thereby converting the bonding layer 13 material from a bonded solid state to a non-bonded or less bonded molten state, gas or plasma state, etc. to achieve debonding between the first layer structure 11 and the second layer structure 12. In providing a laser system, referring to fig. 1, the laser system includes a laser 21, and the laser 21 is used to generate a laser beam. A focusing lens 22 is also provided at a position downstream of the beam of the laser 21, the focusing lens 22 being for receiving the laser beam and focusing the laser beam on the bonding layer 13. In the case of specifically providing the focusing lens 22, a plano-convex lens or a cylindrical lens may be used as the focusing lens 22. In addition, a set of galvanometer systems 23 may be provided, and the galvanometer systems 23 are used to control the focal point of the laser beam to scan across the bonding layer 13, so as to enable thermal bonding of the entire bonding layer 13. By providing a galvanometer system 23, the focus of the laser beam is controlled to scan over the bonding layer 13. In the concrete setting of the galvanometer system 23, the galvanometer system may be a biaxial galvanometer system 23 or a triaxial galvanometer system 23. It should be noted that the galvanometer system 23 is not necessarily a device, and other implementations that can control the focal point of the laser beam to scan the bonding layer 13 may be used. For example, the stage 10 capable of moving in a two-dimensional plane may be employed as an implementation for realizing scanning of the focal point of the laser beam at the bonding layer 13.
Referring to fig. 1, in the laser bonding process, the suction cup 30 is adsorbed on the surface of the second layer structure 12, so that after the laser bonds a partial area of the bonding layer 13, that is, by pulling up the suction cup 30, a gap is generated on the first layer structure 11 and the second layer structure 12 at a position overlapping with the partial area, so that the first layer structure and the second layer structure are partially separated. Specifically, the laser beam generated by the laser system needs to sequentially penetrate through the chuck 30 and the second layer structure 12 before focusing on the laser beam of the bonding layer 13, that is, the laser beam needs to penetrate not only the second layer structure 12 but also the chuck 30. The chuck 30 is also constantly attached to the surface of the second layer structure 12 while controlling the focus of the laser beam to scan the bonding layer 13.
Referring to fig. 1 and 2, the laser debonding apparatus further includes a stretching mechanism 40 connected to the suction cup 30, the stretching mechanism 40 being configured to pull the suction cup 30 upward after the laser beam scans a partial region of the bonding layer 13, so that the first layer structure 11 and the second layer structure 12 are separated at a position overlapping with the partial region. In the application, when the sucking disc 30 is adsorbed on the surface of the second layer structure 12, laser beams sequentially penetrate through the sucking disc 30 and the second layer structure 12 and then are focused on the bonding layer 13, and after the focal point of the laser beams scans a part of the area of the bonding layer 13, the stretching mechanism 40 pulls the sucking disc 30 upwards to separate the two layer structures at the position overlapped with the part of the area, so that the sucking disc 30 is pulled to separate by adopting a stripping mode of laser de-bonding, and the two layer structures are prevented from being adhered again due to cooling and solidification of bonding materials in a molten state, thereby reducing stripping difficulty. In the case where the stretching mechanism 40 is provided, a mechanism such as a pull rod, a piston rod, a linear motor, or the like may be employed as a means for pulling up the suction cup 30.
In determining the first layer structure 11 and the second layer structure 12 in the to-be-bonded member specifically, one layer structure of the first layer structure 11 and the second layer structure 12 may be a wafer, and the other layer structure may be a substrate. That is, during wafer processing, the temporarily bonded wafer and substrate are de-bonded to release the wafer from the substrate. So as to reduce the difficulty of stripping the wafer and the substrate in the laser bonding process. Specifically, the first layer structure 11 may be a wafer, and the second layer structure 12 may be a substrate, so that the laser beam does not pass through the wafer during the laser bonding process, thereby preventing the micro circuit structure on the wafer surface from being affected during the laser bonding process. Meanwhile, the substrate is made of the same material, so that laser beams can pass through the substrate in the scanning process, and the phenomenon of uneven laser bonding temperature caused by that laser at certain positions can pass through and laser at certain positions cannot pass through due to a micro-circuit structure inside a wafer is prevented. Of course, the to-be-bonded member may be other structures that need to be temporarily bonded to two layer structures.
When one of the two layers is a wafer and the other is a substrate, the laser system can control the focal point of the laser beam to scan from the outer ring of the bonding layer 13 to the inner ring in a concentric circle. So that gaseous or plasma species generated during the laser debonding process are dispersed out of the two layer structure. That is, the focal point of the laser beam is focused on the outermost circle of the bonding layer 13, and the focal point of the laser beam is controlled to scan one circle on the outermost circle, so that the outermost circle of the bonding layer 13 is heated to be unbonded. Then gradually scanning step by step from the outer ring to the inner ring in turn, so that the focal points of the laser beams are concentric and sequentially scanned from the outer ring of the bonding layer 13 to the inner ring of the bonding layer 13, and thus the whole bonding layer 13 is unbuckled. When the inner ring is subjected to the debonding, the outer ring is already subjected to the debonding to form a molten, gaseous or plasma substance, so that bonding materials such as the molten, gaseous or plasma substances generated in the debonding process of the inner ring can overflow outwards.
In addition, after the laser beam has debonded from one of the circle regions in the bonding layer 13, the stretching mechanism 40 may be controlled to pull the suction cup 30 upward to separate the first layer 11 from the second layer 12 at a position overlapping with the circle region, and when the scanning and separation method is adopted, the partial region may be a circular region in the process of concentric circle scanning of the focal point of the laser beam. So that pulling on the suction cup 30 separates the two layers in a circular area. It is of course also possible to perform the separating operation after the laser beam has scanned a larger annular region of at least two consecutive turns of adjacent regions at a position on the first layer structure 11 and the second layer structure 12 that coincides with the larger annular region.
When the suction cup 30 is provided, the suction cup 30 may have a suction end surface 31 that is sucked onto the surface of the second layer structure 12, and when applied, the suction end surface 31 is in close contact with the second layer structure 12 to suck the second layer structure 12. Referring to fig. 3 and 4, a plurality of concentric adsorption passages 32 may be provided on the adsorption end surface 31. That is, each circle of adsorption channels 32 is in a ring shape, and a convex end surface is arranged between two adjacent circles of adsorption channels 32 so as to be attached to the surface of the second layer structure 12. The suction cup 30 sucks part of the annular region of the second layer structure 12 by the negative pressure generated in each circle of suction channel 32, and then the suction cup 30 is driven by the stretching mechanism 40 to move upwards a little, so that gaps are generated and separated in the part of the annular region of the two layer structures, which is just subjected to the debonding, and the suction force with the same size is applied to the surface of the second layer structure 12 in the same annular region. In determining the number of turns of the suction passage 32 specifically, the number of turns of the suction passage 32 may be 5, 6, 7, 10, 15, 20, etc., depending on the size of the wafer.
In addition, an air valve may be provided on each suction channel 32 for controlling the negative pressure in the corresponding suction channel 32 to facilitate adjusting the amount of suction on the surface of the second layer 12 to different annular areas. In specific adjustment, referring to fig. 4, when the laser beam scans from the outer ring to the inner ring, the negative pressure in the adsorption path 32 can be increased from the outer ring to the inner ring in order to enable the second layer structure 12 to perform local warping operation from the outer ring to the inner ring in order to separate from the outer ring to the inner ring between the second layer structure 12 and the first layer structure 11 when the stretching mechanism 40 stretches the suction cup 30. After the laser beam has scanned the innermost turn of the bonding layer 13, the stretching mechanism 40 can drive the second layer structure 12 to move upwards, achieving a complete separation between the second layer structure 12 and the first layer structure 11.
When in setting, the material of the sucker 30 and the material of the substrate can be made into the same material, so as to facilitate the selection of the laser wavelength and the control of the laser transmission absorption and the substrate. Specifically, the materials of the chuck 30 and the substrate can be quartz, that is, the chuck 30 is a quartz plate, and the substrate is a quartz substrate, so as to prevent the chuck 30 and the substrate from affecting the laser transmittance. Of course, the materials of the chuck 30 and the substrate are not limited to the above-described arrangement of the same materials, and any arrangement that allows the laser beam to sequentially pass through the chuck 30 and the substrate is within the scope of the present application. And, when the chuck 30 and the substrate are made of the same material, the arrangement is not limited to the above-described arrangement in which the chuck is made of a quartz material.
Of course, other arrangements of the suction cup 30 may be adopted, for example, referring to fig. 5 to 9, the suction cup 30 may have a disc shape, so as to facilitate sucking the disc-shaped to-be-bonded member. The suction cup 30 has opposite suction end surfaces 31 and connection end surfaces 33, and as shown in fig. 5, the upper surface of the suction cup 30 is the connection end surface 33, and the lower surface of the suction cup 30 is the suction end surface 31. Wherein the adsorption end surface 31 is used for adsorbing on the surface of the second layer structure 12, and the connection end surface 33 is used for connecting the stretching mechanism 40 so as to lift up a partial area of the sucker 30. As shown in fig. 5 to 8, the suction end surface 31 of the suction cup 30 is divided into at least three suction areas 34, and the three suction areas 34 include a circular suction area 34 at the center of the suction cup 30 and at least two circular suction areas 34 sequentially arranged outward from the circular suction area 34. That is, there are at least three adsorption areas 34 on the end surface of the suction cup 30, the at least three adsorption areas 34 include a circular adsorption area 34 located at the center of the suction cup 30, and at least two circular adsorption areas 34, and the at least two circular adsorption areas 34 are sequentially arranged from inside to outside from the circular adsorption area 34 at the center, so that when the end surface of the suction cup 30 is adsorbed on the surface of the second layer structure 12, the at least three adsorption areas 34 on the adsorption end surface 31 are adsorbed on the surface of the second layer structure 12. In determining the number of adsorption zones 34, the number of adsorption zones 34 shown in fig. 5 is 4, including a circular adsorption zone 34 at a central position and 3 annular adsorption zones 34 sequentially arranged from inside to outside. It should be understood that the number of divisions of the adsorption zone 34 on the adsorption end face 31 is not limited to the 4 arrangements shown in fig. 5, but the number of the adsorption zones 34 on the adsorption end face 31 may be any value of not less than 3, 5, 6, 8, 12, 18, etc.
In addition, in determining the suction force of each suction area 34 to suction the corresponding position of the second layer structure 12, referring to fig. 9, at least three evacuators 35 may be provided, the at least three evacuators 35 being in one-to-one correspondence with the at least three suction areas 34, each evacuator 35 being for adjusting the suction force of the corresponding suction area 34. As shown in fig. 9, 4 evacuators 35 are provided, and each evacuator 35 corresponds to one adsorption zone 34. That is, each suction area 34 is provided with a vacuum extractor 35 to individually adjust the suction force of the corresponding suction area 34, so that the suction forces generated by different suction areas 34 are different, and when one stretching mechanism 40 lifts the suction cup 30 corresponding to the position of the suction area 34, the suction force of the suction area 34 is increased or decreased according to the difficulty in lifting the suction cup 30 at the position of the suction area 34. For example, the suction force of at least three suction areas 34 may be increased from the outer ring to the inner ring of the suction end face 31, so that the suction force generated by the suction areas 34 near the center position is larger, and the suction force generated by the suction areas 34 near the edge position is smaller. Because the suction area of the suction area 34 at the edge position is larger and the lever of the suction force is larger when the suction cup 30 of the suction area 34 near the edge position is lifted by the stretching mechanism 40, the lifting difficulty is smaller. The area of the suction area 34 near the center is smaller, and the suction lever is smaller, so that the lifting difficulty is higher. By adopting the arrangement mode that the suction force of the suction area 34 close to the center position is larger and the suction force of the suction area 34 close to the edge position is smaller, the suction force between the suction area 34 and the second layer structure 12 is too small to cause the suction cup 30 to be separated from the second layer structure 12 when the suction area 34 positioned at the inner ring is lifted by the corresponding stretching mechanism 40.
Referring to fig. 8, a plurality of concentric suction passages 32 may be provided in the suction end surface 31. That is, each circle of adsorption channels 32 is in a ring shape, and a convex end surface is arranged between two adjacent circles of adsorption channels 32 so as to be attached to the surface of the second layer structure 12. The number of turns of the suction channel 32 in each suction zone 34 may be 1 turn, 2 turns, 3 turns, 5 turns, 10 turns, etc. The suction cup 30 sucks part of the annular region of the second layer structure 12 by the negative pressure generated in each circle of suction channel 32, and then the suction cup 30 is driven by the stretching mechanism 40 to move upwards a little, so that gaps are generated and separated in the part of the annular region of the two layer structures, which is just subjected to the debonding, and the suction force with the same size is applied to the surface of the second layer structure 12 in the same annular region.
Referring to fig. 5, a stretching mechanism 40 is also provided to lift the suction cups 30 of the different suction areas 34 to separate the two layers at the different suction cup 30 areas. Specifically, the number of the groups of the stretching mechanisms 40 is at least three, the at least three groups of the stretching mechanisms 40 are in one-to-one correspondence with the at least three adsorption areas 34, and each group of the stretching mechanisms 40 is used for pulling up the corresponding adsorption area 34 after the bonding layer 13 at the position corresponding to the adsorption area 34 is subjected to phase transition by laser heating, so that the first layer structure 11 and the second layer structure 12 are separated at the position corresponding to the adsorption area 34. The number of the groups of the stretching mechanisms 40 shown in fig. 5 is 4, the 4 groups of the stretching mechanisms 40 correspond to the 4 adsorption areas 34 on the adsorption end face 31, each adsorption area 34 corresponds to one group of the stretching mechanisms 40, and each group of the stretching mechanisms 40 is used for lifting the suction cup 30 at the position corresponding to the adsorption area 34 so as to separate the two layers at the position of the adsorption area 34. Wherein the two layer structures refer to the portion of the second layer structure 12 absorbed by each absorption region 34 and the portion of the first layer structure 11 opposite to the portion of the second layer structure 12 in the up-down direction at the position of each absorption region 34. By dividing the suction end surface 31 of the suction cup 30 into at least three suction areas 34, each suction area 34 is provided with a set of stretching mechanisms 40, so that a pulling force can be applied to a certain suction area 34 of the suction cup 30 alone. In the laser bonding process, after the bonding layer 13 area of the laser scanning part, the corresponding adsorption area 34 of the sucker 30 can be lifted immediately, so that the two layer structures at the position of the adsorption area 34 are separated, and therefore, the pulling force is not required to be applied to the sucker 30 after the whole bonding layer 13 is completely scanned, the time from the bonding layer 13 of the scanning part area to the separation of the two layer structures of the part area is shortened, the part area is prevented from being heated by the laser and being in a molten state, and the bonding layer 13 is prevented from being condensed and bonded again, so that the larger pulling force applied to the sucker 30 is not required, and the peeling difficulty is reduced; and the bonding layer 13 does not need to be scanned for multiple times, so that the peeling time is shortened and the peeling efficiency is improved.
In addition, when each of the stretching mechanisms 40 is provided, referring to fig. 6, the stretching mechanism 40 corresponding to the circular suction area 34 located at the center position and the stretching mechanism 40 corresponding to the circular suction area 34 located at the non-center position may be provided in different structures. Specifically, each set of at least two sets of stretching mechanisms 40 corresponding to at least two annular suction areas 34 may include at least three tie rods 41 and one lifting mechanism 44. That is, the stretching mechanism 40 corresponding to each circular suction area 34 includes at least three tie rods 41, and each tie rod 41 of the three tie rods 41 is connected with the connecting end surface 33 of the suction cup 30. As shown in fig. 6, the stretching mechanism 40 corresponding to each circular adsorption zone 34 includes 3 tie bars 41, and it should be noted that the stretching mechanism 40 corresponding to each circular adsorption zone 34 is not limited to the arrangement of 3 tie bars 41 shown in fig. 3, but may be 4 tie bars 41, 5 tie bars 41, 6 tie bars 41, etc. The number of the pull rods 41 in the stretching mechanisms 40 corresponding to the different annular adsorption areas 34 may be equal to that of the stretching mechanisms 40 corresponding to the different annular adsorption areas 34, or the number of the pull rods 41 in the stretching mechanisms 40 corresponding to the different annular adsorption areas 34 may be different from each other, as shown in fig. 6. Specifically, the number of the tie rods 41 in the tension mechanism 40 located at the edge may be made larger, and the number of the tie rods 41 in the tension mechanism 40 located near the center may be made smaller. Or the number of the pull rods 41 in the stretching mechanism 40 at the edge is made smaller, and the number of the pull rods 41 in the stretching mechanism 40 at the position close to the center is made larger. Referring to fig. 6, the connection points of all the tie rods 41 and the connection end surfaces 33 in the same set of stretching mechanisms 40 are uniformly distributed circumferentially around the center of the suction cup 30, that is, the connection points of all the tie rods 41 and the suction end surfaces 31 in the stretching mechanisms 40 corresponding to each annular suction area 34 are uniformly distributed circumferentially around the center of the suction cup 30, so as to uniformly pull the suction cup 30 at each annular suction area 34. The lifting mechanism 44 is used for lifting at least three pull rods 41 along the axial direction of the suction cup 30, namely, the pulling force applied to each pull rod 41 is parallel to the axial direction of the suction cup 30, so that the pulling direction of the pull rod 41 is parallel to the separating direction of the two layers of structures when the two layers of structures are separated in the suction area 34, and the difficulty of separating the two layers of structures at the position of each suction area 34 is simplified. The pulling force is conveniently and uniformly applied to each annular adsorption zone 34, and the second layer structure 12 is prevented from being deformed unevenly in the circumferential direction of each annular adsorption zone 34.
With continued reference to fig. 6, the connection points between at least three tie rods 41 and the connection end surfaces 33 in each set of stretching mechanisms 40 may be located in the annular adsorption zone 34 corresponding to the set of stretching mechanisms 40, that is, the connection point between all tie rods 41 and the connection end surfaces 33 in the stretching mechanism 40 corresponding to each adsorption zone 34 is located at the position of the corresponding adsorption zone 34, so that the distance between the connection point between all tie rods 41 and the connection end surfaces 33 in the set of stretching mechanisms 40 and the annular adsorption zone 34 corresponding to the set of stretching mechanisms 40 is relatively close, thereby improving the lifting efficiency and effect. Of course, the arrangement is not limited to the above, and it is within the scope of the present disclosure to facilitate separation of the two layers in each adsorption zone 34.
As shown in fig. 6, when the stretching mechanisms 40 corresponding to the circular suction areas 34 in the center position are provided, the group of stretching mechanisms 40 corresponding to the circular suction areas 34 includes one center pull rod 41 and one lifting mechanism 44. The connection point between the center rod 41 and the suction cup 30 is located at the center of the connection end face 33, and the lifting mechanism 44 is used to lift the center rod 41 in the axial direction of the suction cup 30. Namely, by arranging a central pull rod 41 as a stretching connecting piece in the circular adsorption area 34 and arranging the central pull rod 41 in the center, the sucker 30 is stretched from the center of the circular adsorption area 34, thereby overcoming the defect that the deformation of the second layer structure 12 in the circumferential direction of the circular adsorption area 34 is inconsistent. It should be noted that the arrangement of the stretching mechanism 40 corresponding to the circular adsorption zone 34 is not limited to the arrangement of the central pull rod 41 shown above, but other arrangements may be adopted. For example, the stretching means 40 corresponding to the circular suction area 34 at the center position may be arranged in the same manner as the stretching means 40 corresponding to the circular suction area 34. I.e. the corresponding stretching means 40 of the circular suction zone 34, there are also at least three tie rods 41, which at least three tie rods 41 are distributed evenly circumferentially around the centre of the suction cup 30.
In addition, referring to fig. 6, the connection point between the tie rod 41 and the connection end surface 33 in any two adjacent sets of the stretching mechanisms 40 among at least three sets of the stretching mechanisms 40 may be stepped in the radial direction of the suction cup 30, gradually decreasing from the edge of the suction cup 30 toward the center of the suction cup 30. It should be noted that, the step of the connection point between the pull rod 41 and the connection end surface 33 in the adjacent two sets of stretching mechanisms 40 in the radial direction of the suction cup 30 refers to the distance between the connection point between the pull rod 41 and the connection end surface 33 in the adjacent two sets of stretching mechanisms 40 in the radial direction of the suction cup 30. The larger the distance is, the larger the step is, which means that the larger the distance between the connecting point between the pull rod 41 and the connecting end face 33 in the adjacent two groups of the stretching mechanisms 40 is in the radial direction of the sucker 30; conversely, the smaller the spacing thereof, the smaller the step, which means that the connection point between the tie rod 41 and the connection end face 33 in the adjacent two sets of stretching mechanisms 40 is spaced in the radial direction of the suction cup 30. The step of the connection point between the pull rod 41 and the connection end surface 33 in any two adjacent groups of stretching mechanisms 40 in the radial direction of the suction cup 30 is gradually reduced from the edge of the suction cup 30 to the center of the suction cup 30, which means that the step of the connection point between the pull rod 41 and the connection end surface 33 in the two adjacent groups of stretching mechanisms 40 near the edge in the radial direction of the suction cup 30 is larger, and the step of the connection point between the pull rod 41 and the connection end surface 33 in the two adjacent groups of stretching mechanisms 40 near the center is smaller in the radial direction of the suction cup 30, so as to offset the influence of the large deformation difficulty of the inner ring of the second layer structure 12 relative to the outer ring, and make the lifting height of each group of stretching mechanisms 40 relative to the corresponding adsorption area 34 more consistent.
Referring to fig. 10, each of the at least two sets of stretching mechanisms 40 corresponding to the at least two annular suction areas 34 may further include a bracket 42, where the bracket 42 includes at least three support arms 43, and the at least three support arms 43 are in one-to-one correspondence with at least three tie rods 41 in the corresponding set of stretching mechanisms 40. Wherein, each support arm 43 is connected with the corresponding pull rod 41, and the axial direction of each pull rod 41 is parallel to the axial direction of the sucker 30. That is, a bracket 42 is also provided in the stretching mechanism 40 corresponding to each annular adsorption zone 34 to connect all the tie rods 41 in the stretching mechanism 40 into an integral structure. In a specific connection, by connecting all the tension rods 41 in the tension mechanism 40 to the support arms 43 on the support frame 42, the lifting mechanism 44 lifts all the tension rods 41 in the tension mechanism 40 by lifting the support frame 42, so as to apply a relatively uniform tension to all the tension rods 41 in the same group of tension mechanisms 40.
Of course, when only one center tension rod 41 is provided in the tension mechanism 40 corresponding to the circular suction area 34 located at the center position, the lifting mechanism 44 may directly lift the one center tension rod 41 without providing the bracket 42. When the stretching mechanism 40 corresponding to the circular adsorption area 34 is arranged in the same manner as the stretching mechanism 40 of the circular adsorption area 34 and also includes at least three stretching rods 41, the plurality of stretching rods 41 can be connected into an integral structure by adopting the manner of the bracket 42, so that the lifting mechanism 44 lifts the plurality of stretching rods 41 together, and a relatively uniform pulling force is applied to all the stretching rods 41 in the same group of stretching mechanisms 40.
When the lifting mechanism 44 is provided, with continued reference to fig. 10, the lifting mechanism 44 may be a rack and pinion lifter, in which a rack of the rack and pinion lifter is fixedly connected to the support arm 43 or the center pull rod 41, and a transmission direction of the rack coincides with an axial direction of the suction cup 30. To simplify the construction of the lifting mechanism 44. It should be understood that the lifting mechanism 44 is not limited to a rack and pinion elevator arrangement, and that other arrangements may be used. For example, a screw lifter may be used as the lifting mechanism 44, and the screw of the screw lifter is connected to the bracket 42 or the center rod 41, and lifting of the rod 41 and the suction cup 30 may be achieved as well.
When the sucker 30 is adsorbed on the surface of the second layer structure 12, laser beams sequentially penetrate through the sucker 30 and the second layer structure 12 and then are focused on the bonding layer 13, and after the laser beams are controlled to focus on a part of the bonding layer 13 and scan the part of the area, the stretching mechanism 40 pulls the sucker 30 upwards, so that the two layer structures are separated at the position overlapped with the part of the area, and the stripping mode of separating the sucker 30 is adopted by pulling the sucker while laser to prevent the bonding materials in a molten state from being cooled and solidified again between the two layer structures so as to ensure that the two layer structures are adhered again, thereby reducing the stripping difficulty.
The foregoing is merely illustrative of the present application, and the present application is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present application should be included in the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims (10)
1. A laser debonding apparatus, comprising:
a stage for holding thereon a member to be debonded, wherein the member to be debonded includes a first layer structure fixed to a surface of the stage, and a second layer structure bonded by a bonding layer;
the sucking disc is adsorbed on the surface of the second layer structure;
the laser system is used for generating laser beams which sequentially penetrate through the sucker and the second layer structure and then are focused on the bonding layer, and controlling the focus of the laser beams to scan on the bonding layer so as to de-bond the bonding layer;
and the stretching mechanism is connected with the sucker and is used for upwards pulling the sucker after the laser beam scans a partial area of the bonding layer so as to separate the first layer structure from the second layer structure at a position overlapped with the partial area.
2. The laser debonding apparatus of claim 1, wherein one of the first layer structure and the second layer structure is a wafer and the other layer structure is a substrate.
3. The laser debonding apparatus of claim 2 wherein the laser system controls the focal point of the laser beam to scan from the outer ring of the bonding layer to the inner ring in a concentric circle.
4. A laser debonding apparatus as claimed in claim 3, wherein said partial region is an annular region during concentric scanning of the focal point of said laser beam.
5. The laser debonding apparatus of claim 4, wherein the suction cup has a suction end surface that is sucked onto the surface of the second layer structure, wherein a plurality of concentric circles of suction channels are disposed on the suction end surface.
6. The laser debonding apparatus of claim 5, wherein a valve assembly is disposed on each of the adsorption lanes, the valve assembly being configured to control a negative pressure in the corresponding adsorption lane.
7. The laser debonding apparatus of claim 2, wherein the first layer structure is a wafer and the second layer structure is a substrate.
8. The laser debonding apparatus of claim 7, wherein the material of the suction cup is the same material as the material of the substrate.
9. The laser debonding apparatus of claim 8, wherein the material of the chuck and the substrate are both quartz.
10. The laser debonding apparatus of claim 1, wherein the laser system comprises:
a laser for generating a laser beam;
a focusing lens for receiving the laser beam and focusing the laser beam on the bonding layer;
and a galvanometer system for controlling the focus of the laser beam to scan on the bonding layer.
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