CN113838777B - Detection control system for laser de-bonding - Google Patents

Abstract

The invention provides a detection control system for laser bonding, which is characterized in that in the laser bonding process, a sucker is adsorbed on the surface of a substrate, a laser beam sequentially penetrates through the sucker and the substrate and then is focused on a bonding layer, the focal point of the laser beam is controlled to be positioned behind a unit area of a scanning part of the bonding layer, and the sucker is pulled upwards by a lifting assembly to separate the substrate from a wafer at the position of the unit area, so that a stripping mode of separating by pulling the sucker while laser bonding is adopted, and the adhesion between the substrate and the wafer due to re-cooling solidification of bonding materials in a molten state is prevented, thereby reducing stripping difficulty. And the laser spot position information and the bonding layer heating condition information of the local area are observed in real time by arranging the half-reflecting and half-reflecting lens, the detection light source, the beam splitting prism, the spot detection assembly and the upper computer, so that the upper computer can control the galvanometer system to adjust the scanning track and the scanning time of the laser beam, and the laser de-bonding efficiency and the laser de-bonding effect are improved.

Description

Detection control system for laser de-bonding

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a detection control system for laser de-bonding.

Background

In the fabrication of chips, numerous microelectronic devices are typically fabricated on a wafer by etching, deposition, polishing, and the like. Wafers are thin slices cut from a single crystal silicon ingot, typically between 0.3mm and 0.9mm thick, with very thin thickness being visible. Because the thickness of the wafer is relatively thin and multiple etches, polishes, cleans, etc. are required to process various circuits on the wafer, the wafer is typically temporarily bonded to the substrate prior to processing. And then carrying out processes such as deposition, etching and the like on the surface of the wafer so as to manufacture various microelectronic devices on the surface of the wafer. After the wafer processing is completed, the wafer and the substrate need to be de-bonded so that the wafer and the substrate can be separated, and the subsequent wafer dicing process can be performed.

In the prior art, a laser bonding method is generally adopted in the bonding process of bonding a wafer and a substrate. Specifically, a laser beam is focused on a bonding layer between a wafer and a substrate, and the bonding layer is scanned to heat the bonding layer so that the bonding layer is in a molten state. After scanning the entire bonding layer, laser heating is stopped and the wafer and substrate are peeled off using a transfer device with a chuck. However, after the laser stops heating, operations such as moving and adsorbing are required in the process of adsorbing the wafer by using the sucker, which takes a long time, and because the laser stops heating, a temperature drop phenomenon is inevitably caused between the wafer and the substrate, so that the bonding material in a molten state is easily cooled and solidified again, and the wafer and the substrate are adhered together again, and the stripping difficulty is increased. In the prior art, the laser beam focus is scanned on the whole bonding layer only by controlling the galvanometer system, and the laser beam focus moves only according to the scanning track which is set initially, and the substrates are adsorbed by the sucker to be separated after the movement is finished. The laser spot position when scanning the bonding layer and the heating degree of the bonding layer can not be observed in the process, so that the growth condition of the laser explosion point and the energy information of the laser beam can not be known, and the laser bonding-unlocking effect is poor.

Disclosure of Invention

The invention provides a detection control system for laser bonding, which is used for reducing the peeling difficulty between a wafer and a substrate in the laser bonding process, simultaneously knowing the position information of a laser spot and the heated condition information of a bonding layer in a local area in real time, facilitating the adjustment of the scanning track and scanning time of a laser beam and improving the laser bonding efficiency and effect.

The invention provides a laser bonding-off detection control system, which comprises a carrier table for holding a piece to be bonded thereon, wherein the piece to be bonded comprises a wafer fixed on the surface of the carrier table and a substrate bonded through a bonding layer. The substrate surface is also provided with a sucker and a lifting assembly connected with the sucker, wherein the lifting assembly is used for pulling the sucker upwards. A laser for generating a laser beam, and a galvanometer system are also provided, wherein the light entrance aperture of the galvanometer system is opposite to the position of the laser. A half-reflecting half-lens is further arranged between the laser and the light inlet of the galvanometer system, and laser beams generated by the laser can enter the light inlet of the galvanometer system after passing through the half-reflecting half-lens. The laser beam detection device is also provided with a detection light source for generating a detection light beam, and the detection light beam can be reflected into a light inlet hole of the galvanometer system by the half-reflecting and half-transmitting mirror so as to enable the detection light beam and the laser beam to be transmitted coaxially. The focusing lens is arranged opposite to the light emergent hole of the galvanometer system and is used for focusing the laser beam on the bonding layer so as to heat the bonding layer; the focusing lens is also used for focusing the detection light beam on the substrate and bonding the bonding layer to the bonding-release surface. The de-bonding surface can reflect the detection light beam to generate a reflected detection light beam, and the focusing lens is also used for enabling the reflected detection light beam to permeate again and reflect back through the vibrating mirror system and the half-reflection half-lens. A beam splitting prism is further arranged between the detection light source and the semi-reflection semi-transparent mirror and used for splitting the reflected detection light beam reflected by the original path. And a spot detection assembly is arranged at the position opposite to the beam splitting prism so as to collect the reflected detection light beam split by the beam splitting prism. The upper computer is connected with the light spot detection assembly; the upper computer is used for controlling the galvanometer system to move the focus of the laser beam according to the reflected detection beam so as to scan out a unit area on the bonding layer; the upper computer is also used for controlling the lifting assembly to pull the sucker upwards after the unit area is scanned so as to separate the substrate from the wafer at the position of the unit area. The unit area is a circular area on the bonding layer, and the center of the circular area coincides with the center of the wafer.

In the scheme, the sucking disc is adsorbed on the surface of the substrate in the laser bonding process, the laser beam sequentially penetrates through the sucking disc and the substrate and then is focused on the bonding layer, the focal point of the laser beam is controlled to be in the unit area of the scanning part of the bonding layer, and the sucking disc is pulled upwards by the lifting assembly, so that the substrate and the wafer are separated at the position of the unit area, and the stripping mode of simultaneously laser bonding and sucking disc separation is adopted, so that the bonding material in a molten state between the substrate and the wafer is prevented from being bonded again due to cooling solidification again, and the stripping difficulty is reduced. And the laser spot position information and the bonding layer heating condition information of the local area are observed in real time by arranging the half-reflecting and half-reflecting lens, the detection light source, the beam splitting prism, the spot detection assembly and the upper computer, so that the upper computer can control the galvanometer system to adjust the scanning track and the scanning time of the laser beam, and the laser de-bonding efficiency and the laser de-bonding effect are improved. The laser beam is transmitted through the substrate, but not the wafer, so that the phenomenon of uneven laser bonding temperature caused by that laser at some positions can be transmitted and laser at other positions can not be transmitted due to the microcircuit structure in the wafer is prevented.

In a specific embodiment, the wavelength of the detection beam is a set wavelength, and the half-reflecting half-lens is a lens in which the set wavelength is reflected and the other wavelengths are transmitted. So as to minimize the energy loss of the laser beam generated by the laser when the laser beam passes through the half-reflecting half-lens.

In a specific embodiment, a polarizer, a beam expanding and collimating system, a shaping element and an optical isolator are further arranged on the optical path between the laser and the half-reflecting and half-transmitting mirror in sequence. The laser beam generated by the laser is polarized and filtered, the divergence angle of the laser beam is improved, the spot shape such as a circle, a square and the like is regulated, and meanwhile, part of light transmitted by the reflected detection light beam when reflected by the semi-reflection semi-transmission mirror is isolated.

In a specific embodiment, the laser is a fiber laser, and a beam expanding collimator is further disposed on an optical path between the fiber laser and the polarizer, so as to further improve a divergence angle of a laser beam generated by the fiber laser before polarization filtering.

In a specific embodiment, a conjugate prism is further arranged on the optical path between the beam splitting prism and the light spot detection assembly, so that the light spot detection assembly can collect reflected detection light beams conveniently, and light spot information, explosion point growth information and the like of the focus of the laser beams are obtained.

In a specific embodiment, the detection control system further comprises a four-axis displacement platform arranged below the objective table, wherein four displacement axes of the four-axis displacement platform comprise translation axes in an x direction, a y direction and a z direction, and further comprise a rotation axis in the z direction, wherein the z direction is perpendicular to a supporting end surface of the objective table. And the upper computer is also connected with the four-axis displacement platform to control the movement of the four-axis displacement platform. So that the upper computer can control the four-axis displacement platform to move, and the position of the bonding piece to be released can be finely adjusted.

In a specific embodiment, the upper computer is further used for controlling the galvanometer system to move the focus of the laser beam according to the reflected detection beam after the substrate and the wafer are separated at the position of the unit area, and scanning out another unit area at the bonding layer; the upper computer is also used for controlling the lifting assembly to pull the sucker upwards so as to separate the substrate from the wafer at the position of the other unit area. The upper computer sequentially separates the substrate from the wafer at the whole bonding layer position according to the control method. Laser debonding is conducted in a mode of laser scanning heating, pull-up sucker separation, laser scanning heating and pull-up sucker separation and scanning-side separation, bonding materials in a molten state between a substrate and a wafer are prevented from being re-adhered due to re-cooling and solidification, and accordingly stripping difficulty is reduced.

In a specific embodiment, the upper computer controls the focus of the laser beam to sequentially scan out two adjacent unit areas. The whole bonding layer is scanned in a scanning mode from inside to outside or from outside to inside so that the substrate and the wafer are completely separated.

In a specific embodiment, the upper computer is further configured to detect the growth of the blast point in the unit area scanned by the laser beam according to the reflected detection beam. The upper computer also adjusts the stepping of the focus of the moving laser beam of the vibrating mirror system between two adjacent explosion points in the same unit area and the stepping of the focus between two adjacent unit areas in the radial direction of the wafer according to the growth condition of the explosion points. The device is convenient for controlling the step size between two adjacent explosion points in the process of scanning each unit area, is convenient for uniformly heating the bonding layer of the unit area, is convenient for controlling the radial step between two adjacent unit areas, prevents the bonding layer from being insufficiently heated due to overlarge radial step, and also prevents the scanning efficiency from being lower due to overlarge step. Thereby improving the efficiency and effect of laser debonding.

In a specific embodiment, the upper computer is further configured to calculate, after scanning out the unit area, an average value E of the growth cross-sectional areas of all the explosion points in the unit area just scanned out according to the reflected detection light beam. The upper computer is also used for judging whether the growth cross-sectional area of the explosion point in the unit area is not in the range of 90-110%E; the upper computer is also used for generating a warning signal for detecting whether the energy of the laser beam generated by the laser is normal or not when the judging result shows that the growth cross-sectional area of the explosion point in the unit area is not in the range of 90-110% E. The device is convenient for monitoring the growth condition of the explosion point in real time, is convenient for adopting a uniform heating mode to scan and heat the whole unit area, and is also convenient for monitoring the abnormal energy of the laser beam generated by the laser at the first time so as to remind a user to carry out corresponding inspection and replacement.

Drawings

Fig. 1 is a schematic structural diagram of a laser de-bonding detection control system according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a stage, chuck and lift assembly according to an embodiment of the present invention;

FIG. 3 is a schematic structural view of a chuck and lift assembly according to an embodiment of the present invention;

FIG. 4 is a schematic diagram of a pull rod and suction cup according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of an adsorption end face of a sucker according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of an adsorption path on an adsorption end surface according to an embodiment of the present invention;

FIG. 7 is a schematic side view of a suction cup according to an embodiment of the present invention;

fig. 8 is a schematic structural view of a lifting assembly according to an embodiment of the present invention.

Reference numerals:

10-stage 11-wafer 12-substrate 13-bond layer 14-four axis displacement stage

21-laser 22-focusing lens 23-galvanometer system 24-half-reflecting half-mirror

25-detection light source 26-beam-splitting prism 27-light spot detection assembly

30-sucking disc 31-sucking end face 32-sucking channel 33-connecting end face

34-adsorption zone 35-vacuumizer 40-lifting component 41-pull rod

42-bracket 43-support arm 44-lifting mechanism 50-upper computer 51-displacement table controller

61-polarizer 62-expanded beam collimation system 63-shaping element

64-optical isolator 65-expanded beam collimator 66-conjugate prism

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

In order to facilitate understanding of the laser bonding-breaking detection control system provided by the embodiment of the present invention, an application scenario of the detection control system provided by the embodiment of the present invention is first described below, where the detection control system is applied to a process of performing laser bonding-breaking on a wafer and a substrate. The detection control system will be described in detail with reference to the accompanying drawings.

Referring to fig. 1 and 2, the inspection control system according to the embodiment of the present invention includes a stage 10 for holding a to-be-bonded member thereon, wherein the to-be-bonded member includes a wafer 11 fixed on a surface of the stage 10, and a substrate 12 bonded through a bonding layer 13. There is also provided a chuck 30 attached to the surface of the substrate 12, and a lift assembly 40 coupled to the chuck 30, wherein the lift assembly 40 is configured to pull the chuck 30 upward. A laser 21 for generating a laser beam, and a galvanometer system 23 are also provided, wherein an entrance aperture of the galvanometer system 23 is opposite to the position of the laser 21. A half mirror 24 is further disposed between the laser 21 and the light entrance hole of the galvanometer system 23, and the laser beam generated by the laser 21 can enter the light entrance hole of the galvanometer system 23 after passing through the half mirror 24. A detection light source 25 for generating a detection light beam is also provided, and the detection light beam can be reflected by the half mirror 24 into the light entrance hole of the galvanometer system 23 so that the detection light beam is transmitted coaxially with the laser light beam. A focusing lens 22 is also arranged, and the focusing lens 22 is opposite to the light emergent hole of the galvanometer system 23 and is used for focusing the laser beam on the bonding layer 13 so as to heat the bonding layer 13; the focusing lens 22 is also used to focus the detection beam on the debonded surface of the substrate 12, which is bonded to the bonding layer 13. The de-bonding surface can reflect the detection light beam to generate a reflected detection light beam, and the focusing lens 22 is further used for enabling the reflected detection light beam to transmit again and reflect back through the vibrating mirror system 23 and the half-reflecting and half-transmitting mirror 24. A beam splitter prism 26 is further disposed between the detection light source 25 and the half mirror 24, and the beam splitter prism 26 is used for splitting the reflected detection light beam reflected by the original path. A spot detection assembly 27 is also provided at a position opposite the beam splitting prism 26 to collect the reflected detection beam split from the beam splitting prism 26. An upper computer 50 connected with the light spot detection assembly 27 is also arranged; the upper computer 50 is used for controlling the galvanometer system 23 to move the focus of the laser beam according to the reflected detection beam so as to scan out a unit area on the bonding layer 13; the upper computer 50 is also used to control the lift assembly 40 to pull up the chuck 30 after scanning out the cell area to separate the substrate 12 and the wafer 11 at the cell area location. The unit area is a circular area on the bonding layer 13, and the center of the circular area coincides with the center of the wafer 11.

In the above-mentioned scheme, through making the sucking disc 30 adsorb on the surface of the substrate 12 in the laser bonding process, the laser beam is focused on the bonding layer 13 after passing through the sucking disc 30 and the substrate 12 in turn, and after controlling the focus of the laser beam to scan the unit area of the part of the bonding layer 13, the sucking disc 30 is pulled upwards by the lifting assembly 40, so that the substrate 12 and the wafer 11 are separated at the position of the unit area, and the stripping mode of separating by pulling the sucking disc 30 while laser bonding is adopted, so that the adhesion between the substrate 12 and the wafer 11 is prevented again due to the cooling solidification of the bonding material in the molten state again, thereby reducing the stripping difficulty. And the semi-reflecting and semi-reflecting lens 24, the detection light source 25, the beam splitting prism 26, the light spot detection assembly 27 and the upper computer 50 are further arranged, so that the laser light spot position information and the information of the heating condition of the bonding layer 13 in a local area can be observed in real time, the upper computer 50 can control the galvanometer system 23 to adjust the scanning track and scanning time of the laser beam, and the laser bonding-breaking efficiency and effect are improved. The laser beam is transmitted through the substrate 12 but not the wafer 11, so that the phenomenon of uneven laser bonding temperature caused by that laser can pass through some positions and laser cannot pass through other positions due to the microcircuit structure in the wafer 11 is prevented. The following describes each of the above structural devices in detail with reference to the accompanying drawings.

When the stage 10 is provided, referring to fig. 1 and 2, the stage 10 serves as a support structure for holding the member to be released thereon. When set up, a table body having a support end surface may be provided as the stage 10. The support end surface may be shaped as a circle to facilitate placement of a disc-shaped member to be released thereon. And a plurality of suction holes may be provided on the support end surface of the stage 10, the plurality of suction holes being sucked to the surface of the wafer 11 in the member to be debonded, to fix the wafer 11 on the stage 10. Of course, other securing means capable of holding the wafer 11 thereon may be employed. By transmitting the laser beam through the substrate 12 but not through the wafer 11, the phenomenon of non-uniform laser debonding temperature due to the fact that laser light can pass through some positions and laser light cannot pass through some positions caused by the microcircuit structure inside the wafer 11 is prevented.

When the suction cup 30 is provided, referring to fig. 3, 4, 5, 6 and 7, the suction cup 30 may have a disk shape so as to suck a disk-shaped to-be-bonded member. The suction cup 30 has opposite suction end surfaces 31 and connection end surfaces 33, and as shown in fig. 3, the upper surface of the suction cup 30 is the connection end surface 33, and the lower surface of the suction cup 30 is the suction end surface 31. Wherein the adsorption end face 31 is used for adsorbing on the surface of the substrate 12, and the connection end face 33 is used for connecting the lifting assembly 40 to lift up a partial area of the chuck 30, so that the wafer 11 and the substrate 12 are separated in the partial area or the whole area. As shown in fig. 3, 4, 5 and 6, the suction end surface 31 of the suction cup 30 may be divided into at least three suction areas 34, and the at least three suction areas 34 include a circular suction area 34 located at the center of the suction cup 30, and at least two circular suction areas 34 sequentially arranged outward from the circular suction area 34. That is, there are at least three adsorption areas 34 on the end surface of the chuck 30, and the three adsorption areas 34 include a circular adsorption area 34 located at the center of the chuck 30, and at least two circular adsorption areas 34, and the at least two circular adsorption areas 34 are sequentially arranged from inside to outside from the circular adsorption area 34 at the center, so that when the end surface of the chuck 30 is adsorbed on the surface of the substrate 12, the at least three adsorption areas 34 on the adsorption end surface 31 are adsorbed on the surface of the substrate 12. In determining the number of adsorption zones 34, the number of adsorption zones 34 shown in fig. 3 is 4, including a circular adsorption zone 34 at a central position and 3 annular adsorption zones 34 sequentially arranged from inside to outside. It should be understood that the number of divisions of the adsorption zone 34 on the adsorption end face 31 is not limited to the 4 arrangements shown in fig. 3, but the number of the adsorption zones 34 on the adsorption end face 31 may be any value of not less than 3, 5, 6, 8, 12, 18, etc. In addition, the above only shows one arrangement of the suction cup 30, but other arrangements may be adopted.

In addition, the upper computer 50 may control the galvanometer system 23 to move the focal point of the laser beam according to the reflected detection beam, and the unit area scanned by the bonding layer 13 is opposite to the suction area 34 on the suction cup 30, that is, each unit area corresponds to one suction area 34 on the suction cup 30. The cell area at the center position corresponds to the circular suction area 34 at the center position on the suction cup 30, and the cell area at the non-center position corresponds to the opposite circular suction area 34 on the suction cup 30. Because each unit area is a circular area on the bonding layer 13, and the center of the circular area coincides with the center of the wafer 11, the bonding layer 13 corresponding to the circular adsorption area 34 located at the center on the chuck 30 still adopts a circular scanning track manner, and the bonding layer 13 at the position of the circular adsorption area 34 is thermally bonded, so that the bonding layer 13 at the unit area at the center is sufficiently thermally de-bonded, and the de-bonding effect is improved. After scanning out the cell area, the upper computer 50 is also used to control the lift assembly 40 to pull up the chuck 30 to separate the substrate 12 and wafer 11 at the location of the cell area.

Referring to fig. 2 and 3, a lift assembly 40 is also provided to lift the chuck 30 of the different chuck region 34 to separate the wafer 11 from the substrate 12 at the different chuck 30 region. Specifically, the number of the groups of the lifting assemblies 40 is at least three, the at least three groups of the lifting assemblies 40 are in one-to-one correspondence with the at least three adsorption areas 34, and each group of the lifting assemblies 40 is used for lifting the corresponding adsorption area 34 upwards after the bonding layer 13 at the position corresponding to the adsorption area 34 is subjected to laser heating to generate phase change, so that the wafer 11 and the substrate 12 are separated at the position corresponding to the adsorption area 34, and the separation of the substrate 12 and the wafer 11 at the unit area just scanned is realized. As shown in fig. 2 and 3, the number of the lifting assemblies 40 is 4, the 4 lifting assemblies 40 respectively correspond to the 4 adsorption areas 34 on the adsorption end surface 31, each adsorption area 34 corresponds to one lifting assembly 40, and each lifting assembly 40 is used for lifting the suction cup 30 corresponding to the position of the adsorption area 34 so as to separate the wafer 11 from the substrate 12 at the position of the adsorption area 34. The wafer 11 and the substrate 12 at the position of each adsorption region 34 refer to the portion of the substrate 12 adsorbed by each adsorption region 34 and the portion of the wafer 11 vertically opposite to the portion of the substrate 12. By dividing the suction end surface 31 of the suction cup 30 into at least three suction areas 34, each suction area 34 is provided with a set of lifting assemblies 40, so that a pulling force can be applied to a certain suction area 34 of the suction cup 30 individually. In the laser bonding process, after the bonding layer 13 area of the laser scanning part, the corresponding adsorption area 34 of the sucker 30 can be lifted immediately, so that the two layer structures at the position of the adsorption area 34 are separated, and therefore, the pulling force is not required to be applied to the sucker 30 after the whole bonding layer 13 is completely scanned, the time from the bonding layer 13 of the scanning part area to the separation of the wafer 11 and the substrate 12 of the part area is shortened, the bonding layer 13 of the part area in a molten state due to the heating of the laser is prevented from being condensed and bonded again, and the larger pulling force applied to the sucker 30 is not required, so that the peeling difficulty is reduced; and the bonding layer 13 does not need to be scanned for multiple times, so that the peeling time is shortened and the peeling efficiency is improved.

Referring to fig. 7, at least three evacuators 35 may be provided, the at least three evacuators 35 being in one-to-one correspondence with the at least three suction areas 34, each evacuator 35 for adjusting the suction force of the corresponding suction area 34. As shown in fig. 7, 4 evacuators 35 are provided, and each evacuator 35 corresponds to one adsorption zone 34. That is, each suction area 34 is provided with a vacuum extractor 35 to individually adjust the suction force of the corresponding suction area 34, so that the suction forces generated by different suction areas 34 are different, and when a certain lifting component 40 lifts the suction cup 30 corresponding to the position of the suction area 34, the suction force of the suction area 34 is increased or decreased according to the difficulty in lifting the suction cup 30 at the position of the suction area 34. For example, the suction force of at least three suction areas 34 may be increased from the outer ring to the inner ring of the suction end face 31, so that the suction force generated by the suction areas 34 near the center position is larger, and the suction force generated by the suction areas 34 near the edge position is smaller. The lifting difficulty is small because the area of the suction area 34 at the edge position is larger and the lever of the suction force is larger when the lifting assembly 40 lifts the suction cup 30 near the suction area 34 at the edge position. The area of the suction area 34 near the center is smaller, and the suction lever is smaller, so that the lifting difficulty is higher. By adopting the arrangement mode that the suction force of the suction area 34 close to the center position is larger and the suction force of the suction area 34 close to the edge position is smaller, the suction force between the suction area 34 and the substrate 12 is too small to cause the separation of the suction cup 30 and the substrate 12 when the suction area 34 positioned at the inner ring is lifted by the corresponding lifting assembly 40.

In addition, when each suction region 34 is provided, referring to fig. 6, a plurality of concentric suction channels 32 may be provided on the suction end surface 31. That is, each circle of adsorption channels 32 is in a ring shape, and a convex end surface is arranged between two adjacent circles of adsorption channels 32 so as to be attached to the surface of the substrate 12. The number of turns of the suction channel 32 in each suction zone 34 may be 1 turn, 2 turns, 3 turns, 5 turns, 10 turns, etc. The suction cup 30 sucks part of the annular region of the substrate 12 by the negative pressure generated in each circle of suction channel 32, and then the lifting assembly 40 drives the suction cup 30 to move upwards a little, so that the part of the annular region of the two layers, which is just subjected to de-bonding, generates gaps and is separated, and suction with the same size is applied to the surface of the substrate 12 in the same annular region.

In providing each lift assembly 40, referring to fig. 4, the lift assembly 40 corresponding to the circular suction area 34 located at the center position and the lift assembly 40 corresponding to the circular suction area 34 located at the non-center position may be provided in different structures. Specifically, each of the at least two sets of lift assemblies 40 corresponding to the at least two annular suction areas 34 may include at least three tie bars 41 and one lift mechanism 44. That is, each lifting assembly 40 corresponding to the circular suction area 34 includes at least three tie rods 41, and each tie rod 41 of the three tie rods 41 is connected to the connecting end surface 33 of the suction cup 30. As shown in fig. 4, the lifting assembly 40 corresponding to each annular adsorption zone 34 includes 3 tie bars 41, and it should be noted that the lifting assembly 40 corresponding to each annular adsorption zone 34 is not limited to the arrangement of 3 tie bars 41 shown in fig. 4, but may also include 4 tie bars 41, 5 tie bars 41, 6 tie bars 41, and so on. And the number of the pull rods 41 in the lifting assemblies 40 corresponding to different annular adsorption areas 34 can be equal to that of the lifting assemblies 40 corresponding to different annular adsorption areas 34 in the arrangement mode shown in fig. 4, or the number of the pull rods 41 in the lifting assemblies 40 corresponding to different annular adsorption areas 34 can be different. Specifically, the number of tie rods 41 in the edge lift assembly 40 may be increased, and the number of tie rods 41 in the center lift assembly 40 may be decreased. Or fewer tie rods 41 in the edge lift assembly 40 and more tie rods 41 in the center lift assembly 40. Referring to fig. 4, the connection points of all the pull rods 41 and the connection end surfaces 33 in the same group of lifting assemblies 40 are uniformly distributed circumferentially around the center of the suction cup 30, that is, the connection points of all the pull rods 41 and the suction end surfaces 31 in the lifting assemblies 40 corresponding to each annular suction area 34 are uniformly distributed circumferentially around the center of the suction cup 30, so as to uniformly pull the suction cup 30 at each annular suction area 34. The lifting mechanism 44 is used for lifting at least three pull rods 41 along the axial direction of the suction cup 30, namely, the pulling force applied to each pull rod 41 is parallel to the axial direction of the suction cup 30, so that the pulling direction of the pull rod 41 is parallel to the separating direction of the two layers of structures when the two layers of structures are separated in the suction area 34, and the difficulty of separating the two layers of structures at the position of each suction area 34 is simplified. And the pulling force is conveniently and uniformly applied to each annular adsorption zone 34, so that the substrate 12 is prevented from being deformed unevenly in the circumferential direction of each annular adsorption zone 34.

With continued reference to fig. 4, the connection points between the at least three tie rods 41 and the connection end surfaces 33 in each set of lifting assemblies 40 may be located in the annular adsorption zone 34 corresponding to the set of lifting assemblies 40, that is, the connection point between all tie rods 41 and the connection end surfaces 33 in the lifting assembly 40 corresponding to each adsorption zone 34 is located at the position of the corresponding adsorption zone 34, so that the distance between the connection point between all tie rods 41 and the connection end surfaces 33 in the set of lifting assemblies 40 and the annular adsorption zone 34 corresponding to the set of lifting assemblies 40 is relatively short, thereby improving the lifting efficiency and effect. Of course, the arrangement is not limited to the above, and it is within the scope of the present disclosure to facilitate separation of the two layers in each adsorption zone 34.

As shown in fig. 4, when the lifting assemblies 40 corresponding to the circular suction areas 34 at the center are disposed, the group of lifting assemblies 40 corresponding to the circular suction areas 34 includes one center pull rod 41 and one lifting mechanism 44. The connection point between the center rod 41 and the suction cup 30 is located at the center of the connection end face 33, and the lifting mechanism 44 is used to lift the center rod 41 in the axial direction of the suction cup 30. Namely, by providing a central pull rod 41 as a stretching connection member in the circular suction area 34 and providing a central pull rod 41 in the center, the suction cup 30 is stretched from the center of the circular suction area 34, thereby overcoming the defect of inconsistent deformation of the substrate 12 in the circumferential direction of the circular suction area 34. It should be noted that the arrangement of the lifting assemblies 40 corresponding to the circular suction areas 34 is not limited to the arrangement of the central tie rod 41 shown above, but other arrangements may be used. For example, the lifting assemblies 40 corresponding to the circular suction areas 34 at the center position may be arranged in the same manner as the lifting assemblies 40 corresponding to the circular suction areas 34. I.e. the circular suction area 34, also has at least three tie rods 41 in the corresponding lifting assembly 40, which tie rods 41 are evenly distributed circumferentially around the center of the suction cup 30.

In addition, referring to fig. 4, the connection point between the pull rod 41 and the connection end surface 33 in any two adjacent lifting assemblies 40 of at least three groups of lifting assemblies 40 can be stepped in the radial direction of the suction cup 30, and gradually decreases from the edge of the suction cup 30 to the center of the suction cup 30. It should be noted that, the step of the connection point between the pull rod 41 and the connection end surface 33 in the adjacent two sets of lifting assemblies 40 in the radial direction of the suction cup 30 refers to the distance between the connection point between the pull rod 41 and the connection end surface 33 in the adjacent two sets of lifting assemblies 40 in the radial direction of the suction cup 30. The larger the spacing, the larger the step, which means that the larger the spacing between the connection points between the tie rods 41 and the connection end surfaces 33 in the adjacent two sets of lift assemblies 40 in the radial direction of the suction cup 30; conversely, the smaller the spacing, the smaller the step representing the smaller the spacing in the radial direction of the suction cup 30 of the connection point between the tie rod 41 and the connection end face 33 in the adjacent two sets of lift assemblies 40. The radial step of the connection point between the pull rod 41 and the connection end surface 33 in any two adjacent groups of lifting assemblies 40 at the suction cup 30 gradually decreases from the edge of the suction cup 30 to the center of the suction cup 30, which means that the radial step of the connection point between the pull rod 41 and the connection end surface 33 in two adjacent groups of lifting assemblies 40 near the edge at the suction cup 30 is larger, and the radial step of the connection point between the pull rod 41 and the connection end surface 33 in two adjacent groups of lifting assemblies 40 near the center at the suction cup 30 is smaller, so as to offset the influence of the large deformation difficulty of the inner ring of the substrate 12 relative to the outer ring, and make the lifting height of each group of lifting assemblies 40 relative to the corresponding adsorption area 34 more consistent.

Referring to fig. 8, each of the at least two sets of lift assemblies 40 corresponding to the at least two annular suction areas 34 may further include a bracket 42, where the bracket 42 includes at least three arms 43, and the at least three arms 43 are in one-to-one correspondence with the at least three tie rods 41 of the corresponding set of lift assemblies 40. Wherein, each support arm 43 is connected with the corresponding pull rod 41, and the axial direction of each pull rod 41 is parallel to the axial direction of the sucker 30. That is, a bracket 42 is also provided in the lifting assembly 40 corresponding to each annular suction area 34 to connect all the tie rods 41 in the lifting assembly 40 into an integral structure. In particular, by connecting all of the tie rods 41 in the lift assembly 40 to the arms 43 on the brackets 42, the lift mechanism 44 lifts all of the tie rods 41 in the lift assembly 40 by lifting the brackets 42 to apply a relatively uniform tension to all of the tie rods 41 in the same set of lift assemblies 40.

Of course, when only one central pull rod 41 is provided in the lifting assembly 40 corresponding to the circular adsorption zone 34 at the central position, the lifting mechanism 44 may directly lift the one central pull rod 41 without providing the bracket 42. When the lifting assembly 40 corresponding to the circular adsorption area 34 is arranged in the same manner as the lifting assembly 40 of the circular adsorption area 34 and also includes at least three pull rods 41, the plurality of pull rods 41 can be connected into an integral structure by adopting the manner of the bracket 42, so that the lifting mechanism 44 can lift the plurality of pull rods 41 together, and a relatively uniform pulling force is applied to all the pull rods 41 in the same group of lifting assemblies 40.

When the lifting mechanism 44 is provided, with continued reference to fig. 8, the lifting mechanism 44 may be a rack and pinion lifter, in which a rack of the rack and pinion lifter is fixedly connected to the support arm 43 or the center pull rod 41, and a transmission direction of the rack coincides with an axial direction of the suction cup 30. To simplify the construction of the lifting mechanism 44. It should be understood that the lifting mechanism 44 is not limited to a rack and pinion elevator arrangement, and that other arrangements may be used. For example, a screw lifter may be used as the lifting mechanism 44, and the screw of the screw lifter is connected to the bracket 42 or the center rod 41, and lifting of the rod 41 and the suction cup 30 may be achieved as well.

Of course, the materials of the chuck 30, the substrate 12, the pull rod 41 and the central pull rod 41 may be the same, so as to select the wavelength of laser, so that laser can perform laser de-bonding on the bonding layer 13 through the chuck 30 and the substrate 12, and meanwhile, the pull rod 41 or the central pull rod 41 does not affect the penetration efficiency of laser, so as to prevent the pull rod 41 from affecting the scanning of the bonding layer 13 unevenly. Specifically, the materials of the chuck 30, the substrate 12, the pull rod 41 and the central pull rod 41 may be made of quartz materials, so as to prevent the chuck 30 and the substrate 12 from affecting the laser transmittance.

In addition, the laser bonding-off detection control system not only includes the objective table 10, the chuck 30 and the lifting assembly 40 described above, referring to fig. 1, but also includes a laser system for generating a laser beam, referring to fig. 1, after the laser beam sequentially penetrates through the chuck 30 and the substrate 12 from top to bottom, the laser beam is focused on the bonding layer 13 of the piece to be bonded, so as to heat the bonding layer 13, and thereby convert the bonding layer 13 material from a bonded solid state to a non-bonded or less-bonded molten state, gas or plasma state, so as to realize bonding-off between the wafer 11 and the substrate 12. In providing a laser system, referring to fig. 1, the laser system includes a laser 21, and the laser 21 is used to generate a laser beam. A galvanometer system 23 is also provided, and the light inlet of the galvanometer system 23 is opposite to the position of the laser 21, so that the laser beam generated by the laser 21 can enter the galvanometer system 23. A focusing lens 22 is further disposed at a position of the light exit hole of the galvanometer system 23, and the focusing lens 22 is opposite to the position of the light exit hole of the galvanometer system 23 for focusing the laser beam on the bonding layer 13 to heat the bonding layer 13. When the focusing lens 22 is provided, a telecentric lens may be used as the focusing lens 22 to enhance the focusing effect. Of course, a plano-convex lens or a cylindrical lens may also be employed as the focusing lens 22. The galvanometer system 23 can control the focus of the laser beam to scan at the bonding layer 13 to scan a plurality of unit areas at the bonding layer 13, so that the heating thermal bonding of the whole bonding layer 13 is spliced by the plurality of unit areas. By providing a galvanometer system 23, the focus of the laser beam is controlled to scan over the bonding layer 13. In the concrete setting of the galvanometer system 23, the galvanometer system may be a biaxial galvanometer system 23 or a triaxial galvanometer system 23.

With continued reference to fig. 1, the detection control system further includes a detection light path system. In the setting, as shown in fig. 1, a half-reflecting and half-reflecting lens 24 is further disposed between the laser 21 and the light inlet of the galvanometer system 23, and the laser beam generated by the laser 21 can pass through the half-reflecting and half-reflecting lens 24 and then enter the light inlet of the galvanometer system 23, so that the half-reflecting and half-reflecting lens 24 does not affect the light path transmission of the laser beam. A detection light source 25 for generating a detection light beam is also provided at a position opposite to the half mirror 24, and the detection light beam can be reflected into the light entrance hole of the galvanometer system 23 by the half mirror 24 so that the detection light beam and the laser light beam are transmitted coaxially. The focusing lens 22 is also used to focus the detection beam on the debonded surface of the substrate 12, which is bonded to the bonding layer 13. When the detection light beam is transmitted to the unbinding surface between the substrate 12 and the bonding layer 13, the detection light beam can return in the original path, so that information such as a light spot image, a burst point image, a position image and the like of the focusing position of the laser beam is transmitted, and the unbinding state of the laser can be monitored in real time. When the original path is returned, the de-bonding surface can reflect the detection light beam to generate a reflected detection light beam, and the reflected detection light beam contains spot information, explosion point information and the like. The focusing lens 22 is also used for transmitting the reflected detection light beam again and reflecting the reflected detection light beam back through the vibrating mirror system 23 and the semi-reflecting semi-transparent mirror 24. As shown in fig. 1, a beam splitter prism 26 is further disposed between the detection light source 25 and the half mirror 24, and the beam splitter prism 26 is used for splitting the reflected detection light beam reflected by the original path. A spot detecting assembly 27 is further provided at a position opposite to the beam splitting prism 26 to collect the reflected detection beam split from the beam splitting prism 26 so as to image the reflected detection beam, thereby observing spot position information, heating condition, burst distribution condition, stepping condition, etc. focused on the bonding layer 13. In providing the spot detecting assembly 27, a CCD camera may be employed as the spot detecting assembly 27. By arranging the half-reflecting and half-reflecting lens 24, the detection light source 25, the beam splitting prism 26, the light spot detection assembly 27 and the upper computer 50, the laser light spot position information and the information of the heating condition of the bonding layer 13 in a local area can be observed in real time, the upper computer 50 can control the galvanometer system 23 to adjust the scanning track and the scanning time of the laser beam, and the laser de-bonding efficiency and the laser de-bonding effect can be improved.

Referring to fig. 1, when the half mirror 24 is provided, only the detection light beam may be blocked and reflected by the half mirror 24, and the other light beams may be transmitted. Specifically, when the wavelength of the detection beam is a set wavelength, the half mirror 24 may be a lens that reflects the set wavelength and transmits the other wavelengths. To minimize the energy loss of the laser beam generated by the laser 21 when transmitted through the half mirror 24.

As shown in fig. 1, a polarizer 61, a beam expanding and collimating system 62, a shaping element 63, and an optical isolator 64 may be sequentially disposed on the optical path between the laser 21 and the half mirror 24. The polarizer 61 is used for polarization filtering of the laser beam generated by the laser 21 so as to obtain polarized light with the same polarization direction, and facilitate the subsequent galvanometer system 23 to move the laser beam scanning and focusing by the focusing lens 22. The beam expansion and collimation system 62 is used for improving the divergence angle of the laser beam so as to obtain the laser beam with proper size of cross-sectional area. The shaping element 63 therein is used to adjust the spot shape, such as circular, square, etc., to control the cross-sectional shape of the focal point of the laser beam focused on the bonding layer 13. The optical isolator 64 is used to isolate a portion of the reflected detection beam that is transmitted when reflected by the half mirror 24, so as to reduce interference with the laser beam. In addition, as shown in fig. 1, when the laser 21 is the fiber laser 21, a beam expansion collimator 65 may be further provided on the optical path between the fiber laser 21 and the polarizer 61 to further improve the divergence angle of the laser beam generated by the fiber laser 21 before the polarization filtering.

With continued reference to fig. 1, a conjugate prism 66 may also be disposed on the optical path between the beam splitter prism 26 and the spot detection assembly 27, so that the spot detection assembly 27 can collect the reflected detection beam, and obtain spot information, explosion point growth information, and the like at the focal point of the laser beam.

As shown in fig. 1, a host computer 50 connected to the spot detecting unit 27 is further provided, and the host computer 50 has a function of collecting information and generating control instructions to control the movement of the suction cup 30, the lifting unit 40, the galvanometer system 23, and the like. Specifically, a notebook computer, a desktop computer, an industrial personal computer, or the like can be used as the upper computer 50. The upper computer 50 is connected with the spot detection assembly 27 to receive information such as a spot image, a burst point image, and the like, which are presented by the reflected detection beam and collected by the spot detection assembly 27. In operation, the upper computer 50 is configured to control the galvanometer system 23 to move the focal point of the laser beam according to the reflected detection beam, so as to scan a unit area on the bonding layer 13, that is, control the focal point of the laser beam to scan a unit area of a circular area on the bonding layer 13 around the center of the wafer 11, so as to perform thermal bonding on the bonding layer 13 in the unit area, and make the bonding layer 13 in the unit area in a state of melting, vaporizing, etc. The upper computer 50 is also used to control the lift assembly 40 to pull up the chuck 30 after scanning out the cell area to separate the substrate 12 and the wafer 11 at the cell area location. After the focus of the laser beam is controlled to be in the unit area of the scanning part of the bonding layer 13, the sucking disc 30 is pulled upwards by the lifting assembly 40, so that the substrate 12 and the wafer 11 are separated at the position of the unit area, and the separation stripping mode of pulling the sucking disc 30 while laser is used for bonding, so that the bonding material between the substrate 12 and the wafer 11 due to the fact that the bonding material in a molten state is cooled and solidified again is prevented from being adhered again, and the stripping difficulty is reduced.

As shown in fig. 1 and 2, a four-axis displacement platform 14 may be disposed under the stage 10, and the stage 10 may be disposed on the four-axis displacement platform 14 to drive the stage 10 to move. The four displacement axes of the four-axis displacement platform 14 include translational axes in an x direction, a y direction and a z direction, and further include a rotation axis in the z direction, where the z direction is perpendicular to the supporting end surface of the stage 10, so as to translate in 3 directions, such as up and down, left and right, front and back, and simultaneously realize rotation in the z direction, so that the to-be-bonded piece can rotate in a horizontal plane. Referring to fig. 1, the upper computer 50 is also connected to the four-axis displacement platform 14 to control the movement of the four-axis displacement platform 14. So that the upper computer 50 can control the four-axis displacement platform 14 to move, and fine adjustment of the position of the bonding piece to be released is facilitated. Of course, referring to fig. 1, a displacement table controller 51 may also be provided as a controller for separately controlling the four-axis displacement platform 14, where the displacement table controller 51 is connected to the upper computer 50, so that a control instruction generated or received by the upper computer 50 is transmitted to the displacement table controller 51, and the displacement table controller 51 controls the movement of the four-axis displacement platform 14.

With continued reference to fig. 1 and 2, during the laser bonding process, the chuck 30 may be attached to the surface of the substrate 12, so that after the laser bonds to a certain unit area of the bonding layer 13, i.e. by pulling up the chuck 30, a gap is formed between the wafer 11 and the substrate 12 at a position overlapping the unit area, so that the wafer and the substrate are locally separated. Specifically, the laser beam generated by the laser system needs to sequentially penetrate through the chuck 30 and the substrate 12 before focusing on the bonding layer 13, that is, the laser beam needs to penetrate not only the substrate 12 but also the chuck 30. The chuck 30 is also constantly attached to the surface of the substrate 12 while controlling the focus of the laser beam to scan over the bonding layer 13.

After scanning a certain unit area and lifting the chuck 30 at the unit area to separate the wafer 11 and the substrate 12 at the position of the unit area, the upper computer 50 is further configured to control the galvanometer system 23 to move the focal point of the laser beam according to the reflected detection beam, and scan another unit area at the bonding layer 13, that is, continue scanning to form the next unit area. After scanning the next cell area, the upper computer 50 is also used to control the lift assembly 40 to pull the chuck 30 upward to separate the substrate 12 and wafer 11 at another cell area location. The upper computer 50 sequentially separates the substrate 12 and the wafer 11 at the entire bonding layer 13 position in accordance with the control method described above. Laser debonding is performed in a manner that facilitates laser scanning heating, pull-up chuck 30 separation, laser scanning heating, and pull-up chuck 30 separation while scanning separation, preventing re-adhesion between substrate 12 and wafer 11 due to re-cooling and solidification of the bonding material in a molten state, thereby reducing the difficulty of lift-off.

For example, referring to fig. 3, 4 and 5, when the laser beam scans the bonding layer 13 region at the position of one of the adsorption regions 34, the chuck 30 at the position of the adsorption region 34 can be lifted by the lifting component 40 corresponding to the adsorption region 34, so that the wafer 11 and the substrate 12 generate a gap at the position of the adsorption region 34, thereby realizing local separation. The bonding layer 13 region which is heated to be unbonded at the position of the suction region 34 is prevented from being condensed again to be bonded when the subsequent laser beam scans the bonding layer 13 (another unit region) at the position of the other suction region 34, and the two layer structures at the suction region 34 can be separated at the first time after the laser beam scans one suction region 34. In turn, after the laser beam scans the bonding layer 13 area at the position of the next suction area 34, the lift assembly 40 corresponding to the next suction area 34 lifts the suction cup 30 at the suction area 34, so that the two layers at the position of the suction area 34 are separated. In turn, the laser beam scanning debonding is performed on the bonding layer 13 area at the location of all the suction areas 34. The corresponding lift assemblies 40 lift the suction cups 30 at the suction areas 34 to separate the two layer structures at the location of the suction areas 34. Thus, the whole bonding layer 13 is unbuckled, and the whole bonding layer 13 area of the two-layer structure is lifted and separated, so that the two-layer structure is unbuckled and peeled thoroughly.

In addition, the upper computer 50 may control the focal point of the laser beam to sequentially scan two unit areas adjacent to each other, so as to scan the whole bonding layer 13 from inside to outside or from outside to inside, and completely separate the substrate 12 and the wafer 11. For example, when the upper computer 50 controls the focal point of the laser beam to scan the bonding layer 13, the bonding layer 13 may be scanned from the region of the bonding layer 13 at the position of the outermost suction region 34, and the corresponding lift assembly 40 may be started to perform the lift separation. All the bonding layers 13 at the positions of the adsorption areas 34 are scanned sequentially from the outer ring to the inner ring, so that the scanning of the whole bonding layer 13 area is realized. When the inner ring is subjected to the debonding, the outer ring is already subjected to the debonding to form a molten, gaseous or plasma substance, so that bonding materials such as the molten, gaseous or plasma substances generated in the debonding process of the inner ring can overflow outwards.

When the upper computer 50 specifically detects, the upper computer 50 can detect the growth condition of the explosion point in the unit area scanned by the laser beam according to the reflected detection beam. Afterwards, the upper computer 50 can adjust the stepping of the focal point of the laser beam between two adjacent explosion points in the same unit area and the stepping of the focal point of the laser beam between two adjacent unit areas in the radial direction of the wafer 11 according to the growth condition of the explosion points. The step between two adjacent explosion points in the same unit area refers to the interval between the centers of the two adjacent explosion points emitted by the laser beam along the circumferential direction of the unit area. The smaller the step between two adjacent bursts, the denser the bursts emitted by the laser beam. Conversely, the larger the step between two adjacent explosion points, the more sparse the explosion points emitted by the laser beam. The detection system is used for controlling the step size between two adjacent explosion points in the process of scanning each unit area, so that the bonding layer 13 of the unit area is heated uniformly. The step of the adjacent two unit regions in the radial direction of the wafer 11 refers to the interval between the center lines of the adjacent two unit regions in the radial direction of the wafer 11. The denser the adjacent two cell regions are, the smaller the step of the adjacent two cell regions in the radial direction of the wafer 11 is. The more the adjacent two cell regions are stepped in the radial direction of the wafer 11, the more sparse the adjacent two cell regions are explained. By the above-mentioned detection system and the upper computer 50, it is convenient to control the radial stepping between the adjacent two unit areas, preventing the bonding layer 13 from being insufficiently heated due to the excessively large radial stepping, and also preventing the scanning efficiency from being low due to the excessively small stepping. Thereby improving the efficiency and effect of laser debonding.

In addition, after scanning out the unit area, the upper computer 50 may also calculate the average value E of the growth cross-sectional areas of all the explosion points in the unit area just scanned out according to the reflected detection light beam, so as to calculate the approximate value of the growth cross-sectional areas of all the explosion points in the unit area. After the calculation is completed, the upper computer 50 may also determine whether the growth cross-sectional area of the explosion point in the unit area is not within the range of 90% e to 110% e. If the growth cross-sectional area of all the explosion points in the unit area is in the range of 90-110% E, that is, the growth cross-sectional area without explosion points is not in the range of 90-110% E, it is indicated that when the focal point of the laser beam scans the unit area, the laser energy is scanned with relatively consistent laser energy, the heating condition of the bonding layer 13 in the unit area is also relatively consistent, and the bonding effect is relatively good. Of course, if the growth cross-sectional area of the explosion point is not within the range of 90% e to 110% e, it means that the fluctuation of laser energy is large when the focal point of the laser beam scans the unit region, the heating condition of the bonding layer 13 in the unit region is not uniform, and the debonding effect is not good. Therefore, when the determination result shows that the growth cross-sectional area of the explosion point in the cell region is not within the range of 90% e to 110% e, the host computer 50 can generate a warning signal for detecting whether the laser beam energy generated by the laser 21 is normal. The growth condition of the explosion point is convenient to monitor in real time, the whole unit area is convenient to be heated in a scanning way by adopting a uniform heating mode, and meanwhile, the laser beam energy generated by the laser 21 is also convenient to monitor at the first time, so that a user is reminded to carry out corresponding inspection and replacement.

In the laser bonding process, the sucker 30 is adsorbed on the surface of the substrate 12, the laser beam sequentially penetrates through the sucker 30 and the substrate 12 and then is focused on the bonding layer 13, the focal point of the laser beam is controlled to be in a unit area of a scanning part of the bonding layer 13, and the sucker 30 is pulled upwards by the lifting assembly 40 to separate the substrate 12 from the wafer 11 at the position of the unit area, so that the separation mode of pulling the sucker 30 while laser bonding is adopted, and the adhesion between the substrate 12 and the wafer 11 again due to the fact that bonding materials in a molten state are cooled and solidified again is prevented, thereby reducing the separation difficulty. And the semi-reflecting and semi-reflecting lens 24, the detection light source 25, the beam splitting prism 26, the light spot detection assembly 27 and the upper computer 50 are further arranged, so that the laser light spot position information and the information of the heating condition of the bonding layer 13 in a local area can be observed in real time, the upper computer 50 can control the galvanometer system 23 to adjust the scanning track and scanning time of the laser beam, and the laser bonding-breaking efficiency and effect are improved. The laser beam is transmitted through the substrate 12 but not the wafer 11, so that the phenomenon of uneven laser bonding temperature caused by that laser can pass through some positions and laser cannot pass through other positions due to the microcircuit structure in the wafer 11 is prevented.

The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (10)

1. A detection control system for laser debonding, comprising:

a stage for holding thereon a member to be released; the to-be-debonded piece comprises a wafer fixed on the surface of the objective table and a substrate bonded through a bonding layer;

a chuck adsorbed to the surface of the substrate;

the lifting assembly is connected with the sucker and is used for pulling the sucker upwards;

a laser for generating a laser beam;

the light inlet of the galvanometer system is opposite to the position of the laser;

a half-reflecting half-lens positioned between the laser and the light inlet of the galvanometer system; the laser beam generated by the laser can enter the light inlet of the galvanometer system after passing through the half-reflecting half-lens;

the detection light source is used for generating a detection light beam, and the detection light beam can be reflected into the light inlet hole of the vibrating mirror system by the semi-reflection semi-transparent mirror, so that the detection light beam and the laser beam are transmitted coaxially;

A focusing lens opposite to the light emergent hole of the galvanometer system, for focusing the laser beam on the bonding layer to heat the bonding layer; the focusing lens is also used for focusing the detection light beam on an unbinding surface which is adhered to the bonding layer on the substrate; the de-bonding surface can reflect the detection light beam to generate a reflected detection light beam, and the focusing lens is also used for enabling the reflected detection light beam to permeate again and reflect back through the vibrating mirror system and the half-reflection half-lens in the original path;

the beam splitting prism is arranged between the detection light source and the half reflecting mirror; the beam splitting prism is used for splitting the reflected detection light beam reflected by the original path;

a spot detection assembly opposing the beam splitting prism to collect the reflected detection beam split from the beam splitting prism;

the upper computer is connected with the light spot detection assembly and is used for controlling the vibrating mirror to move the focus of the laser beam according to the reflected detection light beam so as to scan out a unit area on the bonding layer; the upper computer is also used for controlling the lifting assembly to pull the sucker upwards after the unit area is scanned, so that the substrate and the wafer are separated at the position of the unit area; the unit area is a circular area on the bonding layer, and the center of the circular area coincides with the center of the wafer.

2. The inspection control system of claim 1 wherein the wavelength of the inspection beam is a set wavelength and the half mirror is a lens that reflects the set wavelength and transmits other wavelengths.

3. The detection control system of claim 1, wherein a polarizer, a beam expanding and collimating system, a shaping element and an optical isolator are further arranged on the optical path between the laser and the semi-reflecting and semi-transmitting mirror in sequence.

4. The detection control system of claim 3, wherein the laser is a fiber laser and a beam expanding collimator is further disposed on the optical path between the fiber laser and the polarizer.

5. The detection control system of claim 1, wherein a conjugate prism is further disposed in the optical path between the beam splitting prism and the spot detection assembly.

6. The inspection control system of claim 1, further comprising a four-axis displacement platform disposed below the stage; the four displacement axes in the four-axis displacement platform comprise translation axes in the x direction, the y direction and the z direction and also comprise a rotation axis in the z direction, wherein the z direction is perpendicular to the supporting end surface of the objective table;

And the upper computer is also connected with the four-axis displacement platform so as to control the movement of the four-axis displacement platform.

7. The inspection control system of claim 1 wherein said host computer is further configured to control said galvanometer system to move a focal point of said laser beam to scan another cell area over said bond layer based on said reflected inspection beam after said substrate and wafer are separated at said cell area location; the upper computer is also used for controlling the lifting assembly to pull the sucker upwards so as to separate the substrate from the wafer at the position of the other unit area;

and the upper computer sequentially separates the substrate from the wafer at the whole bonding layer according to the control method.

8. The inspection control system of claim 7 wherein said upper computer controls the focal point of said laser beam to be adjacent to two successively scanned unit areas.

9. The inspection control system of claim 7 wherein said host computer is further configured to detect the growth of a blast point in a cell area scanned by said laser beam based on said reflected inspection beam;

The upper computer is also used for adjusting the stepping of the focus of the laser beam between two adjacent explosion points in the same unit area and the stepping of the focus of the laser beam between two adjacent unit areas in the radial direction of the wafer according to the growth condition of the explosion points.

10. The inspection control system of claim 9 wherein said host computer is further configured to calculate an average E of the growth cross-sectional areas of all of the blast points in said cell area based on said reflected inspection beam after scanning out of the cell area;

the upper computer is also used for judging whether the growth cross-sectional area of the explosion point in the unit area is not in the range of 90-110%E;

and the upper computer is also used for generating a warning signal for detecting whether the energy of the laser beam generated by the laser is normal or not when the judging result shows that the growth cross-sectional area of the explosion point in the unit area is not in the range of 90-110% E.