CN113838778A - Laser bonding device that separates - Google Patents
Laser bonding device that separates Download PDFInfo
- Publication number
- CN113838778A CN113838778A CN202111035726.5A CN202111035726A CN113838778A CN 113838778 A CN113838778 A CN 113838778A CN 202111035726 A CN202111035726 A CN 202111035726A CN 113838778 A CN113838778 A CN 113838778A
- Authority
- CN
- China
- Prior art keywords
- laser
- layer structure
- layer
- bonding
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007246 mechanism Effects 0.000 claims abstract description 96
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000001179 sorption measurement Methods 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 42
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000926 separation method Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 description 24
- 238000010521 absorption reaction Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a laser de-bonding device which comprises an object stage, wherein the object stage is used for holding a piece to be de-bonded on the object stage, and the piece to be de-bonded comprises a first layer structure and a second layer structure bonded through a bonding layer. Also includes a suction cup and a laser system. The sucking disc adsorbs on second floor structure surface. The laser system is used for generating laser beams which sequentially penetrate through the sucking disc and the second layer structure and then focus on the bonding layer, and controlling the focal point of the laser beams to scan on the bonding layer so as to perform debonding on the bonding layer. And the stretching mechanism is connected with the sucker and used for pulling the sucker upwards after the laser beam scans the partial area of the bonding layer so as to separate the first layer structure from the second layer structure at the position overlapped with the partial area. The laser bonding-breaking and sucking disc-pulling separation mode is adopted, so that the two layer structures are prevented from being bonded again due to the fact that the bonding material in the molten state is cooled and solidified again, and the difficulty in stripping is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a laser bonding removing device.
Background
In the manufacturing process of the wafer, since the wafer is thin, the wafer needs to be temporarily bonded on the substrate, and then deposition, etching and other processes are performed on the surface of the wafer to manufacture various microcircuit structures on the surface of the wafer. After the wafer processing is completed, the wafer and the substrate need to be debonded to separate the wafer and the substrate, so that the subsequent wafer scribing process can be performed. In the prior art, a laser debonding mode is generally adopted in the debonding process of the wafer and the substrate. Specifically, a laser beam is focused on a bonding layer between a wafer and a substrate, and the bonding layer is scanned to heat the bonding layer, so that the bonding layer is in a molten state. After scanning the entire bonding layer, laser heating was stopped, and the wafer and the substrate were peeled off using a transfer device having a suction cup. However, after the laser stops heating, in the process of absorbing the wafer by the suction cup, operations such as moving and absorbing are needed, which takes a long time, and since the laser stops heating, a temperature drop phenomenon inevitably occurs between the wafer and the substrate, so that the bonding material in a molten state is easily cooled and solidified again, and the wafer and the substrate are adhered together again, which increases the difficulty in peeling.
Disclosure of Invention
The invention provides a laser bonding removal device, which is used for reducing the stripping difficulty between two layer structures in the laser bonding removal process and facilitating the separation of the two layer structures.
The invention provides a laser bonding and debonding device which comprises an objective table used for holding a piece to be unbonded on the objective table, wherein the piece to be unbonded comprises a first layer structure fixed on the surface of the objective table and a second layer structure bonded through a bonding layer. The laser debonding apparatus also includes a chuck and a laser system. Wherein the sucker is adsorbed on the surface of the second layer structure. The laser system is used for generating laser beams which sequentially penetrate through the sucking disc and the second layer structure and then focus on the bonding layer, and controlling the focal point of the laser beams to scan on the bonding layer so as to perform debonding on the bonding layer. The laser bonding apparatus further includes a stretching mechanism connected to the suction cup, the stretching mechanism being configured to pull the suction cup upward after the laser beam scans the partial area of the bonding layer to separate the first layer structure and the second layer structure at a position coinciding with the partial area.
In the scheme, when the sucker is adsorbed on the surface of the second layer structure, the laser beam sequentially penetrates through the sucker and the second layer structure and then focuses on the bonding layer, the focus of the laser beam is controlled to be positioned after the bonding layer scans a partial area, the sucker is pulled upwards by the stretching mechanism, the two layer structures are separated at the position overlapped with the partial area, and the two layer structures are prevented from being adhered again due to the fact that the bonding material in a molten state is cooled and solidified again by adopting a stripping mode that the sucker is pulled to separate while laser is debonded, so that the stripping difficulty is reduced.
In a specific embodiment, one of the first and second layer structures is a wafer and the other layer structure is a substrate. So as to reduce the difficulty of peeling the wafer and the substrate in the laser bonding process.
In a specific embodiment, the laser system controls the focal point of the laser beam to scan from an outer circle to an inner circle of the bonding layer in a concentric circle shape. So as to facilitate the diffusion of the gaseous or plasma species generated during the laser debinding process out of the two layer structure.
In a specific embodiment, the partial region is a circular ring-shaped region in the scanning process of the focal point of the laser beam in a concentric circle shape. So that the suction cup can be pulled to separate the two layer structures in a circular ring-shaped area.
In a specific embodiment, the suction cup has an adsorption end face adsorbed on the surface of the second layer structure, wherein a plurality of circles of adsorption channels distributed in a concentric circle shape are arranged on the adsorption end face. So as to apply the same amount of suction to the surface of the second layer structure in the same annular area.
In a specific embodiment, each adsorption channel is provided with an air valve, and the air valve is used for controlling the negative pressure in the corresponding adsorption channel so as to adjust the suction force on the surface of the second layer structure to different circular ring areas.
In a specific embodiment, the first layer structure is a wafer, and the second layer structure is a substrate, so that a laser beam does not penetrate through the wafer in a laser electrolytic bonding process, thereby preventing the influence on a microcircuit structure on the surface of the wafer in the laser electrolytic bonding process; meanwhile, the substrate is made of the same material, so that laser beams can penetrate through the substrate in the scanning process, and the phenomenon of nonuniform laser debonding temperature caused by the fact that laser at some positions can penetrate through the substrate and laser at some positions cannot penetrate through the substrate due to the micro-circuit structure in the wafer is prevented.
In one embodiment, the chuck is made of the same material as the substrate to facilitate selection of the laser wavelength to control laser transmission through the chuck and substrate.
In a specific embodiment, the chuck and substrate are both made of quartz to prevent the chuck and substrate from affecting laser transmission.
In a particular embodiment, the laser system includes a laser, a focusing lens, and a galvanometer system. Wherein, the laser is used for generating laser beams; the focusing lens is used for receiving the laser beam and focusing the laser beam on the bonding layer; and the galvanometer system is used for controlling the focus of the laser beam to scan on the bonding layer. And a galvanometer system is arranged so as to control the focus of the laser beam to scan on the bonding layer.
Drawings
Fig. 1 is a schematic structural diagram of laser bonding according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a suction cup and a stretching mechanism according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a longitudinal section of a chuck according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of an adsorption channel on an adsorption end face according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of another sucking disc and stretching mechanism according to an embodiment of the present invention;
FIG. 6 is a schematic structural view of a pull rod and a suction cup according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a suction end surface of another chuck according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of another adsorption passage on an adsorption end face according to an embodiment of the present invention;
FIG. 9 is a schematic side view of another embodiment of a chuck in accordance with the present invention;
fig. 10 is a schematic structural diagram of another stretching mechanism according to an embodiment of the present invention.
Reference numerals:
10-stage 11-first layer structure 12-second layer structure 13-bonding layer
21-laser 22-focusing lens 23-galvanometer system
30-suction cup 31-adsorption end face 32-adsorption channel 33-connection end face
34-adsorption zone 35-vacuum
40-stretching mechanism 41-pull rod 42-support 43-support arm 44-lifting mechanism
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to facilitate understanding of the laser bonding apparatus provided in the embodiment of the present invention, an application scenario of the laser bonding apparatus provided in the embodiment of the present invention is first described below, where the laser bonding apparatus is applied in a semiconductor manufacturing process for debonding and peeling two temporarily bonded layer structures. The laser bonding apparatus will be described in detail with reference to the accompanying drawings.
Referring to fig. 1, the laser bonding apparatus according to an embodiment of the present invention includes a stage 10, where the stage 10 is configured to hold a to-be-unbonded object thereon, where the to-be-unbonded object includes a first layer structure 11 fixed on a surface of the stage 10, and a second layer structure 12 bonded by a bonding layer 13. The laser debonding apparatus also includes a chuck 30 and a laser system. Wherein the suction cup 30 is sucked on the surface of the second layer structure 12. The laser system is configured to generate a laser beam that sequentially passes through the suction cup 30 and the second layer structure 12 and is focused on the bonding layer 13, and control a focal point of the laser beam to scan the bonding layer 13, so as to debond the bonding layer 13. The laser debonding apparatus further includes a stretching mechanism 40 connected to the suction cup 30, wherein the stretching mechanism 40 is configured to pull the suction cup 30 upward after the laser beam scans the partial area of the bonding layer 13, so as to separate the first layer structure 11 and the second layer structure 12 at a position coinciding with the partial area.
In the above-mentioned solution, when the suction cup 30 is sucked on the surface of the second layer structure 12, the laser beam sequentially passes through the suction cup 30 and the second layer structure 12 and focuses on the bonding layer 13, and after the focal point of the laser beam is controlled to scan a partial region of the bonding layer 13, the drawing mechanism 40 draws the suction cup 30 upward to separate the two layer structures at a position overlapping the partial region, so as to prevent the two layer structures from being bonded again due to the re-cooling and solidification of the bonding material in a molten state by adopting a peeling method of separating the two layer structures while laser debonding and drawing the suction cup 30, thereby reducing the difficulty in peeling. Each structure will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the stage 10 serves as a support structure for holding a member to be debonded thereon. When provided, a stage body having a supporting end surface may be provided as the stage 10. And a plurality of air suction holes can be arranged on the supporting end surface of the object stage 10, and the plurality of air suction holes are adsorbed on the surface of the first layer structure 11 in the bonding piece to be debonded so as to fix the first layer structure 11 on the object stage 10. Of course, other fastening means capable of holding the first layer structure 11 thereon may also be used.
Referring to fig. 1, the laser bonding apparatus further includes a laser system for generating a laser beam and focusing the laser beam on the bonding layer 13 of the piece to be bonded to heat the bonding layer 13, so as to transform the bonding layer 13 material from a bonding solid state into a non-bonding or low-bonding-force melting state, a gas or plasma state, and the like, so as to achieve bonding separation between the first layer structure 11 and the second layer structure 12. In setting up the laser system, and with reference to fig. 1, the laser system comprises a laser 21, which laser 21 is arranged to generate a laser beam. A focusing lens 22 is further disposed downstream of the laser 21, and the focusing lens 22 is configured to receive the laser beam and focus the laser beam on the bonding layer 13. Specifically, when the focusing lens 22 is provided, a plano-convex lens or a cylindrical lens may be used as the focusing lens 22. In addition, a set of galvanometer system 23 may be provided, and the galvanometer system 23 is used for controlling the focus of the laser beam to scan on the bonding layer 13 so as to perform pyrolytic bonding on the whole bonding layer 13. A galvanometer system 23 is provided to control the focus of the laser beam to scan across the bonding layer 13. Specifically, the galvanometer system 23 may be a biaxial galvanometer system 23 or a triaxial galvanometer system 23. It should be noted that the galvanometer system 23 is not necessarily a device, and other implementations may be adopted to control the focal point of the laser beam to scan the bonding layer 13. For example, a stage 10 that is movable in a two-dimensional plane may be employed as an implementation that enables the focal point of the laser beam to scan across the bonding layer 13.
Referring to fig. 1, in the present application, during the laser bonding process, the suction cup 30 is attached to the surface of the second layer structure 12, so that after the laser bonding process is performed on the partial region of the bonding layer 13, that is, by pulling up the suction cup 30, a gap is generated between the first layer structure 11 and the second layer structure 12 at the position coinciding with the partial region, so that the two structures are locally separated. Specifically, the laser beam generated by the laser system needs to sequentially penetrate through the suction cup 30 and the second layer structure 12, and then the laser beam can be focused on the bonding layer 13, that is, the laser beam needs to penetrate through not only the second layer structure 12 but also the suction cup 30. The suction cup 30 is also always sucked onto the surface of the second layer structure 12 while controlling the focal point of the laser beam to scan the bonding layer 13.
Referring to fig. 1 and 2, the laser debinding apparatus further includes a stretching mechanism 40 connected to the suction cup 30, the stretching mechanism 40 being configured to pull the suction cup 30 upward after the laser beam scans a partial region of the bonding layer 13 to separate the first layer structure 11 and the second layer structure 12 at a position coinciding with the partial region. That is, in the present application, when the suction cup 30 is mainly adsorbed on the surface of the second layer structure 12, the laser beam sequentially penetrates through the suction cup 30 and the second layer structure 12 and then focuses on the bonding layer 13, and the focal point of the laser beam is controlled after the bonding layer 13 scans a partial region, the stretching mechanism 40 pulls up the suction cup 30, so that the two layer structures are separated at a position overlapping with the partial region, and the two layer structures are prevented from being bonded again due to the re-cooling and solidification of the bonding material in a molten state by adopting a peeling method of separating the two layer structures by pulling the suction cup 30 while laser debonding, thereby reducing the difficulty in peeling. When the stretching mechanism 40 is provided, a mechanism such as a pull rod, a piston rod, a linear motor, etc. may be employed as a means for pulling the suction cup 30 upward.
When the first layer structure 11 and the second layer structure 12 in the to-be-debonded member are specifically determined, one of the first layer structure 11 and the second layer structure 12 may be a wafer, and the other may be a substrate. Namely, in the wafer processing process, the temporarily bonded wafer and the substrate are debonded, so that the wafer is peeled from the substrate. So as to reduce the difficulty of peeling the wafer and the substrate in the laser bonding process. Specifically, the first layer structure 11 may be a wafer, and the second layer structure 12 may be a substrate, so that a laser beam does not pass through the wafer during the laser de-bonding process, thereby preventing the influence on the microcircuit structure on the surface of the wafer during the laser de-bonding process. Meanwhile, the substrate is made of the same material, so that laser beams can penetrate through the substrate in the scanning process, and the phenomenon of nonuniform laser debonding temperature caused by the fact that laser at some positions can penetrate through the substrate and laser at some positions cannot penetrate through the substrate due to the micro-circuit structure in the wafer is prevented. Of course, the to-be-unbonded member can also be in other structures which need to be unbonded for temporarily bonding two layer structures.
When one of the two layer structures is a wafer and the other is a substrate, since the two layer structures are both in a disk shape, the focal point of the laser beam controlled by the laser system can be sequentially scanned from the outer ring of the bonding layer 13 to the inner ring in a concentric circle shape. So as to facilitate the diffusion of the gaseous or plasma species generated during the laser debinding process out of the two layer structure. That is, the focus of the laser beam is focused on the outermost circle of the bonding layer 13 first, and the focus of the laser beam is controlled to scan the outermost circle for one circle, so that the outermost circle of the bonding layer 13 is thermally debonded. And then, gradually scanning step by step from the outer ring to the inner ring in sequence, so that the focus of the laser beam is in a concentric circle shape and is sequentially scanned from the outer ring of the bonding layer 13 to the inner ring of the bonding layer 13, thereby completing the bonding resolution of the whole bonding layer 13. When the inner ring is subjected to debonding, the outer ring is already subjected to debonding to form a molten state, a gaseous state or a plasma state substance, so that the bonding materials in the molten state, the gaseous state or the plasma state and the like generated in the debonding process of the inner ring can overflow outwards.
In addition, after the laser beam performs debonding on one circle of the bonding layer 13, the stretching mechanism 40 may be controlled to pull the suction cup 30 upward, so as to separate the positions of the first layer structure 11 and the second layer structure 12 coinciding with the circle of the bonding layer, and when the scanning and separating manner is adopted, the partial area may be a circular ring-shaped area in the scanning process in which the focal point of the laser beam is concentric. So that the suction cup 30 is pulled to separate the two layer structures in a circular area. Of course, it is also possible to perform the separating operation at a position on the first layer structure 11 and the second layer structure 12 coinciding with a larger circular area, after the laser beam has continuously scanned the larger circular area consisting of at least two adjacent turns.
When the suction cup 30 is disposed, the suction cup 30 may have an absorption end surface 31 absorbed on the surface of the second layer structure 12, and when in use, the absorption end surface 31 is closely attached to the second layer structure 12 to absorb the second layer structure 12. Referring to fig. 3 and 4, a plurality of circles of adsorption channels 32 may be disposed on the adsorption end surface 31. That is, each circle of the adsorption channel 32 is a circular ring, and a convex end surface is arranged between two adjacent circles of the adsorption channels 32 so as to be attached to the surface of the second layer structure 12. The suction disc 30 sucks the partial annular area of the second layer structure 12 through the negative pressure generated in each circle of suction channel 32, and then the drawing mechanism 40 drives the suction disc 30 to move upwards a little, so that the partial annular area which is just bonded in the two layer structures generates a gap and is separated, and the suction force with the same size is applied to the surface of the second layer structure 12 in the same annular area. In determining the number of the suction channels 32, the number of the suction channels 32 may be 5, 6, 7, 10, 15, 20, etc., depending on the size of the wafer.
In addition, each adsorption passage 32 may be provided with an air valve for controlling the negative pressure in the corresponding adsorption passage 32 so as to adjust the suction force on the surface of the second layer structure 12 to different circular areas. In particular, referring to fig. 4, when the laser beam scans from the outer circle to the inner circle in sequence, the negative pressure in the suction channel 32 may be increased from the outer circle to the inner circle in sequence, so that when the drawing mechanism 40 draws the suction cup 30, the second layer structure 12 may be subjected to a local warping operation from the outer circle to the inner circle in sequence, and the second layer structure 12 and the first layer structure 11 may be separated from the outer circle to the inner circle in sequence. Until the laser beam scans the innermost circle of the bonding layer 13, the stretching mechanism 40 can drive the second layer structure 12 to move upwards, so as to realize complete separation between the second layer structure 12 and the first layer structure 11.
When provided, the chuck 30 can be made of the same material as the substrate to facilitate selection of the laser wavelength and control of the laser transmission through the chuck and the substrate. Specifically, the material of the chuck 30 and the substrate may be quartz, that is, the chuck 30 is a quartz disk and the substrate is a quartz substrate, so as to prevent the chuck 30 and the substrate from affecting the laser transmittance. Of course, the materials of the chuck 30 and the substrate are not limited to the same material, and any arrangement that allows the laser beam to sequentially pass through the chuck 30 and the substrate is within the scope of the present application. And when the chuck 30 and the substrate are made of the same material, the arrangement is not limited to the above-described arrangement in which both are made of quartz material.
Of course, the suction cup 30 may be disposed in other ways, for example, referring to fig. 5 to 9, the suction cup 30 may be shaped like a disk so as to suck the disk-shaped key to be released. The suction pad 30 has a suction end surface 31 and a connection end surface 33 opposite to each other, and as shown in fig. 5, the upper surface of the suction pad 30 is the connection end surface 33, and the lower surface of the suction pad 30 is the suction end surface 31. Wherein the absorption end face 31 is used for absorbing on the surface of the second layer structure 12, and the connection end face 33 is used for connecting the stretching mechanism 40 so as to lift a partial area of the suction cup 30 upwards. As shown in fig. 5 to 8, the suction end surface 31 of the suction cup 30 is divided into at least three suction areas 34, and the three suction areas 34 include a circular suction area 34 located at the center of the suction cup 30 and at least two circular suction areas 34 arranged in sequence from the circular suction area 34 to the outside. That is, at least three absorption regions 34 are provided on the end surface of the suction cup 30, the at least three absorption regions 34 include a circular absorption region 34 located at the center of the suction cup 30, and at least two circular absorption regions 34 are further provided, and the at least two circular absorption regions 34 are sequentially arranged from inside to outside from the central circular absorption region 34, so that when the end surface of the suction cup 30 is absorbed on the surface of the second layer structure 12, the at least three absorption regions 34 on the absorption end surface 31 are absorbed on the surface of the second layer structure 12. When the number of the adsorption regions 34 is determined, the number of the adsorption regions 34 shown in fig. 5 is 4, and the adsorption regions include a circular adsorption region 34 located at the center and 3 circular adsorption regions 34 arranged in sequence from inside to outside. It should be understood that the number of the divided adsorption regions 34 on the adsorption end face 31 is not limited to the arrangement of 4 as shown in fig. 5, and besides, the number of the adsorption regions 34 on the adsorption end face 31 may be any value not less than 3, such as 3, 5, 6, 8, 12, 18, etc.
In addition, in determining the suction force of each adsorption area 34 adsorbing the corresponding position of the second layer structure 12, referring to fig. 9, at least three vacuum pumps 35 may be provided, the at least three vacuum pumps 35 correspond to the at least three adsorption areas 34 one by one, and each vacuum pump 35 is used for adjusting the suction force of the corresponding adsorption area 34. As shown in fig. 9, 4 vacuum pumps 35 are provided, and each vacuum pump 35 corresponds to one adsorption region 34. That is, each suction area 34 is provided with a vacuum extractor 35 to individually adjust the suction force of the corresponding suction area 34, so that the suction forces generated by different suction areas 34 are different, and when one stretching mechanism 40 lifts the suction cup 30 at the position corresponding to the suction area 34, the suction force of the suction area 34 is increased or decreased according to the difficulty of lifting the suction cup 30 at the position corresponding to the suction area 34. For example, the suction force of at least three suction areas 34 may be increased from the outer circumference to the inner circumference of the suction end surface 31, so that the suction force generated by the suction area 34 near the center is larger and the suction force generated by the suction area 34 near the edge is smaller. When the suction cups 30 close to the suction areas 34 at the edge positions are lifted by the stretching mechanism 40, the areas of the suction areas 34 at the edge positions are larger, and the lever of the suction force is larger, so that the lifting difficulty is smaller. The area of the suction area 34 near the center is smaller, and the lever for suction is smaller, so that the lifting difficulty is higher. By adopting the arrangement mode that the suction force of the suction area 34 near the central position is larger, and the suction force of the suction area 34 near the edge position is smaller, the suction disc 30 can be prevented from being separated from the second layer structure 12 due to the fact that the suction force between the suction area 34 and the second layer structure 12 is too small when the suction area 34 positioned at the inner ring is lifted by the corresponding stretching mechanism 40.
In addition, referring to fig. 8, a plurality of circles of the adsorption channels 32 may be concentrically arranged on the adsorption end surface 31. That is, each circle of the adsorption channel 32 is a circular ring, and a convex end surface is arranged between two adjacent circles of the adsorption channels 32 so as to be attached to the surface of the second layer structure 12. The number of passes 32 in each adsorption zone 34 may be 1, 2, 3, 5, 10, etc. The suction disc 30 sucks the partial annular area of the second layer structure 12 through the negative pressure generated in each circle of suction channel 32, and then the drawing mechanism 40 drives the suction disc 30 to move upwards a little, so that the partial annular area which is just bonded in the two layer structures generates a gap and is separated, and the suction force with the same size is applied to the surface of the second layer structure 12 in the same annular area.
Referring to fig. 5, a stretching mechanism 40 is also provided to lift the suction cups 30 of the different suction areas 34 to separate the two layer structures at the different suction cup 30 areas. Specifically, the number of the groups of the stretching mechanisms 40 is at least three, the at least three groups of stretching mechanisms 40 correspond to the at least three adsorption areas 34 one by one, and each group of stretching mechanisms 40 is used for pulling up the corresponding adsorption area 34 after the bonding layer 13 at the position corresponding to the adsorption area 34 is heated by laser to undergo phase change, so that the first layer structure 11 and the second layer structure 12 are separated at the position corresponding to the adsorption area 34. As shown in fig. 5, the number of the sets of the stretching mechanisms 40 is 4, the 4 sets of stretching mechanisms 40 respectively correspond to 4 suction areas 34 on the suction end surface 31, each suction area 34 corresponds to one set of stretching mechanisms 40, and each set of stretching mechanisms 40 is used for lifting the suction cup 30 at the position corresponding to the suction area 34 so as to separate the two layer structures at the position corresponding to the suction area 34. Here, the two-layer structure at the position of each adsorption region 34 refers to a portion of the second-layer structure 12 adsorbed by each adsorption region 34 and a portion of the first-layer structure 11 which is vertically opposed to the portion of the second-layer structure 12. By dividing the suction end surface 31 of the suction cup 30 into at least three suction areas 34 and providing a set of stretching mechanisms 40 for each suction area 34, a tensile force can be applied to a certain suction area 34 of the suction cup 30 individually. In the laser de-bonding process, the corresponding adsorption area 34 of the sucker 30 can be lifted immediately after the bonding layer 13 area of the laser scanning part is scanned, so that the two layer structures at the position of the adsorption area 34 are separated, and therefore, the sucker 30 does not need to be applied with pulling force after the whole bonding layer 13 is scanned with laser, the time from the scanning of the bonding layer 13 of the part area to the separation of the two layer structures of the part area is shortened, the bonding layer 13 in a molten state is prevented from being heated by the laser to be condensed and bonded again, so that a larger pulling force is not required to be applied to the sucker 30, and the stripping difficulty is reduced; and the bonding layer 13 does not need to be scanned for multiple times, so that the stripping time is shortened, and the stripping efficiency is improved.
In addition, in providing each of the stretching mechanisms 40, referring to fig. 6, the stretching mechanism 40 corresponding to the circular suction region 34 located at the central position and the stretching mechanism 40 corresponding to the circular suction region 34 located at the non-central position may be provided in different structures. Specifically, each of the at least two sets of stretching mechanisms 40 corresponding to the at least two annular adsorbing areas 34 may include at least three pull rods 41 and one lifting mechanism 44. Namely, the stretching mechanism 40 corresponding to each circular ring-shaped adsorption area 34 comprises at least three pull rods 41, and each pull rod 41 in the three pull rods 41 is connected with the connecting end surface 33 of the suction cup 30. As shown in fig. 6, the stretching mechanism 40 corresponding to each circular ring-shaped adsorption area 34 includes 3 pull rods 41, and it should be noted that the arrangement of the 3 pull rods 41 shown in fig. 3 is not limited in the stretching mechanism 40 corresponding to each circular ring-shaped adsorption area 34, and in addition, 4 pull rods 41, 5 pull rods 41, 6 pull rods 41, and the like may be used. The number of the pull rods 41 in the stretching mechanisms 40 corresponding to different circular ring-shaped adsorption areas 34 may be set in the same manner as shown in fig. 6, or the number of the pull rods 41 in the stretching mechanisms 40 corresponding to different circular ring-shaped adsorption areas 34 may be different. Specifically, the number of the tension rods 41 in the tension mechanism 40 located at the edge may be larger, and the number of the tension rods 41 in the tension mechanism 40 located near the center may be smaller. Or, the number of the tension rods 41 in the tension mechanism 40 located at the edge may be small, and the number of the tension rods 41 in the tension mechanism 40 located near the center may be large. Referring to fig. 6, the connection points of all the pull rods 41 and the connection end surfaces 33 in the same group of stretching mechanisms 40 are circumferentially and uniformly distributed around the center of the suction cup 30, that is, the connection points of all the pull rods 41 and the suction end surfaces 31 in the stretching mechanisms 40 corresponding to each circular ring-shaped suction area 34 are circumferentially and uniformly distributed around the center of the suction cup 30, so as to uniformly pull the suction cup 30 at each circular ring-shaped suction area 34. The lifting mechanism 44 is used for lifting at least three pull rods 41 along the axial direction of the suction cup 30, that is, the pulling force exerted on each pull rod 41 is parallel to the axial direction of the suction cup 30, so that the pulling direction of the pull rod 41 is parallel to the separation direction of the two layer structures at the separation of the suction areas 34, and the difficulty of separating the two layer structures at the position of each suction area 34 is simplified. The uniform application of tensile force to each circular ring-shaped adsorption area 34 is facilitated, and the second layer structure 12 is prevented from being deformed in the circumferential direction of each circular ring-shaped adsorption area 34.
With continued reference to fig. 6, the connection points between the at least three pull rods 41 and the connection end surface 33 in each set of stretching mechanisms 40 may be located in the circular ring-shaped adsorption region 34 corresponding to the set of stretching mechanisms 40, that is, the connection points between all the pull rods 41 and the connection end surface 33 in the stretching mechanism 40 corresponding to each adsorption region 34 are located at the position corresponding to the adsorption region 34, so that the connection points between all the pull rods 41 and the connection end surface 33 in one set of stretching mechanisms 40 are closer to the circular ring-shaped adsorption region 34 corresponding to the set of stretching mechanisms 40, thereby improving the lifting efficiency and effect. Of course, it is within the scope of this patent to not limit the arrangement described above so long as it facilitates separation of the two layer structures in each adsorption zone 34.
As shown in fig. 6, when the stretching mechanism 40 corresponding to the central circular suction area 34 is provided, a group of stretching mechanisms 40 corresponding to the circular suction area 34 includes a central rod 41 and a lifting mechanism 44. The connection point between the center rod 41 and the suction cup 30 is located at the center of the connection end surface 33, and the lifting mechanism 44 is used for lifting the center rod 41 in the axial direction of the suction cup 30. Namely, a central pull rod 41 is arranged in the circular adsorption area 34 to serve as a tensile connecting piece, the central pull rod 41 is arranged in the center, and the sucker 30 is pulled from the center of the circular adsorption area 34, so that the defect that the second layer structure 12 is deformed inconsistently in the circumferential direction of the circular adsorption area 34 is overcome. It should be noted that the arrangement of the stretching mechanism 40 corresponding to the circular absorption area 34 is not limited to the arrangement of one central pull rod 41 shown above, and other arrangements may be adopted. For example, the stretching mechanism 40 corresponding to the circular suction area 34 at the center position may be arranged in the same manner as the stretching mechanism 40 corresponding to the circular suction area 34 described above. That is, the stretching mechanism 40 corresponding to the circular suction area 34 also has at least three pull rods 41, and the at least three pull rods 41 are uniformly distributed in the circumferential direction around the center of the suction cup 30.
In addition, referring to fig. 6, in at least three sets of stretching mechanisms 40, the connecting point between the pull rod 41 and the connecting end surface 33 in any two adjacent sets of stretching mechanisms 40 may gradually decrease from the edge of the suction cup 30 to the center of the suction cup 30 in the radial direction of the suction cup 30. It should be noted that the step of the connection point between the pull rod 41 and the connecting end surface 33 in the radial direction of the suction cup 30 in the two adjacent sets of the stretching mechanisms 40 refers to the distance between the connection point between the pull rod 41 and the connecting end surface 33 in the radial direction of the suction cup 30 in the two adjacent sets of the stretching mechanisms 40. The larger the distance is, the larger the step is, the larger the distance in the radial direction of the suction cup 30 between the connecting point between the pull rod 41 and the connecting end surface 33 in the two adjacent groups of the stretching mechanisms 40 is represented; conversely, the smaller the distance, the smaller the step, which means the smaller the distance between the connecting point between the pull rod 41 and the connecting end face 33 in the two adjacent sets of stretching mechanisms 40 in the radial direction of the suction cup 30. The radial step of the connection point between the pull rod 41 and the connection end surface 33 in any two adjacent sets of the stretching mechanisms 40 in the suction cup 30 is gradually reduced from the edge of the suction cup 30 to the center of the suction cup 30, which means that the radial step of the connection point between the pull rod 41 and the connection end surface 33 in two adjacent sets of the stretching mechanisms 40 near the edge is larger, and the radial step of the connection point between the pull rod 41 and the connection end surface 33 in two adjacent sets of the stretching mechanisms 40 near the center is smaller in the suction cup 30, so as to counteract the influence of the difficulty in deformation of the inner ring relative to the outer ring of the second layer structure 12, and make the lifting height of each set of the stretching mechanisms 40 to the corresponding adsorption area 34 more consistent.
Referring to fig. 10, each of the at least two sets of stretching mechanisms 40 corresponding to the at least two annular absorption areas 34 may further include a support 42, the support 42 includes at least three arms 43, and the at least three arms 43 correspond to the at least three pull rods 41 in the corresponding set of stretching mechanisms 40 one by one. Wherein each support arm 43 is connected with a corresponding pull rod 41, and the axial direction of each pull rod 41 is parallel to the axial direction of the suction cup 30. Namely, a bracket 42 is further arranged in the stretching mechanism 40 corresponding to each circular ring-shaped adsorption area 34, so that all the pull rods 41 in the stretching mechanism 40 are connected into a whole structure. Specifically, the lifting mechanism 44 lifts all the pull rods 41 in the stretching mechanism 40 by connecting all the pull rods 41 in the stretching mechanism 40 to the support arm 43 on the support 42, so as to apply a relatively uniform pulling force to all the pull rods 41 in the same set of stretching mechanisms 40.
Of course, when there is only one central pull rod 41 in the stretching mechanism 40 corresponding to the circular absorption area 34 located at the central position, the bracket 42 may not be provided, and the lifting mechanism 44 may directly lift the central pull rod 41. When the stretching mechanism 40 corresponding to the circular adsorption area 34 adopts the same setting mode as the stretching mechanism 40 of the circular adsorption area 34 and also includes at least three pull rods 41, the plurality of pull rods 41 can be connected into an integrated structure by adopting the above-mentioned support 42 mode, so that the lifting mechanism 44 can lift the plurality of pull rods 41 together, and all the pull rods 41 in the same group of stretching mechanisms 40 are exerted with uniform pulling force.
When the lifting mechanism 44 is provided, with continued reference to fig. 10, the lifting mechanism 44 may be a rack and pinion lifter, the rack of the rack and pinion lifter is fixedly connected to the arm 43 or the central pull rod 41, and the transmission direction of the rack coincides with the axial direction of the suction cup 30. To simplify the construction of the lifting mechanism 44. It should be understood that the lifting mechanism 44 is not limited to a rack and pinion lifter arrangement, and other arrangements may be used. For example, a lead screw lifter can be used as the lifting mechanism 44, and a lead screw of the lead screw lifter is connected with the bracket 42 or the central pull rod 41, so that the pull rod 41 and the suction cup 30 can be lifted.
When the suction cup 30 is adsorbed on the surface of the second layer structure 12, the laser beam sequentially penetrates through the suction cup 30 and the second layer structure 12 and then focuses on the bonding layer 13, and after the focal point of the laser beam is controlled to be in a partial area scanned by the bonding layer 13, the drawing mechanism 40 draws the suction cup 30 upwards to separate the two layer structures at the position overlapped with the partial area, so that the two layer structures are prevented from being bonded again due to the fact that the bonding material in a molten state is cooled and solidified again by adopting a stripping mode that the suction cup 30 is drawn to separate while laser bonding is performed, and the difficulty in stripping is reduced.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A laser debonding apparatus, comprising:
the object stage is used for holding a piece to be unbonded on the object stage, wherein the piece to be unbonded comprises a first layer structure fixed on the surface of the object stage and a second layer structure bonded through a bonding layer;
the sucking disc is adsorbed on the surface of the second layer structure;
the laser system is used for generating a laser beam which sequentially penetrates through the sucker and the second layer structure and then is focused on the bonding layer, and controlling the focus of the laser beam to scan on the bonding layer so as to perform debonding on the bonding layer;
and the stretching mechanism is connected with the sucker and is used for pulling the sucker upwards after the laser beam scans a partial area of the bonding layer so as to separate the first layer structure and the second layer structure at a position which is superposed with the partial area.
2. The laser debonding apparatus of claim 1, wherein one of the first and second layer structures is a wafer and the other layer structure is a substrate.
3. The laser debinding apparatus of claim 2, wherein the laser system controls the focal point of the laser beam to scan sequentially from an outer circle to an inner circle of the bonding layer in a concentric circle.
4. The laser debonding apparatus according to claim 3, wherein the partial region is an annular region during the concentric scanning of the focal point of the laser beam.
5. The laser debonding apparatus according to claim 4, wherein the chuck has an adsorption end surface adsorbed on the surface of the second layer structure, wherein the adsorption end surface is provided with a plurality of circles of adsorption channels distributed in a concentric circle.
6. The laser debonding apparatus according to claim 5, wherein each adsorption lane is provided with an air valve assembly for controlling the negative pressure in the corresponding adsorption lane.
7. The laser debonding apparatus of claim 2, wherein the first layer structure is a wafer and the second layer structure is a substrate.
8. The laser debonding apparatus of claim 7, wherein the chuck is of the same material as the substrate.
9. The laser debonding apparatus of claim 8, wherein the chuck and the substrate are both quartz.
10. The laser debonding apparatus of claim 1, wherein the laser system comprises:
a laser for generating a laser beam;
a focusing lens for receiving the laser beam and focusing the laser beam on the bonding layer;
and the galvanometer system is used for controlling the focus of the laser beam to scan on the bonding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111035726.5A CN113838778B (en) | 2021-09-03 | 2021-09-03 | Laser bonding device that breaks |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111035726.5A CN113838778B (en) | 2021-09-03 | 2021-09-03 | Laser bonding device that breaks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113838778A true CN113838778A (en) | 2021-12-24 |
| CN113838778B CN113838778B (en) | 2023-12-05 |
Family
ID=78962091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111035726.5A Active CN113838778B (en) | 2021-09-03 | 2021-09-03 | Laser bonding device that breaks |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113838778B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116364635A (en) * | 2023-05-31 | 2023-06-30 | 广东鸿浩半导体设备有限公司 | Laser de-bonding method based on infrared imaging and visible light imaging comprehensive assistance |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10134426A (en) * | 1996-10-31 | 1998-05-22 | Memory Tec Kk | Method for peeling stamper and device |
| KR20110131017A (en) * | 2010-05-28 | 2011-12-06 | 주식회사 엘티에스 | Substrate detaching apparatus of llo process |
| JP2013179237A (en) * | 2012-02-29 | 2013-09-09 | Disco Abrasive Syst Ltd | Lift-off device |
| JP2013229508A (en) * | 2012-04-26 | 2013-11-07 | Disco Abrasive Syst Ltd | Lift-off method |
| US20140169927A1 (en) * | 2012-12-14 | 2014-06-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
| CN205880416U (en) * | 2016-06-29 | 2017-01-11 | 京东方科技集团股份有限公司 | Base plate stripping off device |
| CN108555464A (en) * | 2018-06-29 | 2018-09-21 | 华中科技大学 | A kind of large complicated carved dynamic focusing laser processing and system |
| KR20210101822A (en) * | 2020-02-11 | 2021-08-19 | 정라파엘 | Wafer debonding unit and wafer detaching apparatus including the same |
-
2021
- 2021-09-03 CN CN202111035726.5A patent/CN113838778B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10134426A (en) * | 1996-10-31 | 1998-05-22 | Memory Tec Kk | Method for peeling stamper and device |
| KR20110131017A (en) * | 2010-05-28 | 2011-12-06 | 주식회사 엘티에스 | Substrate detaching apparatus of llo process |
| JP2013179237A (en) * | 2012-02-29 | 2013-09-09 | Disco Abrasive Syst Ltd | Lift-off device |
| JP2013229508A (en) * | 2012-04-26 | 2013-11-07 | Disco Abrasive Syst Ltd | Lift-off method |
| US20140169927A1 (en) * | 2012-12-14 | 2014-06-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
| CN205880416U (en) * | 2016-06-29 | 2017-01-11 | 京东方科技集团股份有限公司 | Base plate stripping off device |
| CN108555464A (en) * | 2018-06-29 | 2018-09-21 | 华中科技大学 | A kind of large complicated carved dynamic focusing laser processing and system |
| KR20210101822A (en) * | 2020-02-11 | 2021-08-19 | 정라파엘 | Wafer debonding unit and wafer detaching apparatus including the same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116364635A (en) * | 2023-05-31 | 2023-06-30 | 广东鸿浩半导体设备有限公司 | Laser de-bonding method based on infrared imaging and visible light imaging comprehensive assistance |
| CN116364635B (en) * | 2023-05-31 | 2023-08-11 | 广东鸿浩半导体设备有限公司 | Laser de-bonding method based on infrared imaging and visible light imaging comprehensive assistance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113838778B (en) | 2023-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5791866B2 (en) | Work dividing device | |
| JP5253996B2 (en) | Work dividing method and tape expansion device | |
| TWI665720B (en) | Processing method of wafer | |
| KR101732762B1 (en) | Joint system, substrate processing system, joint method and computer storage medium | |
| JPH1174164A (en) | Wafer-processing device, wafer support device, wafer-processing method, and manufacture of wafer | |
| TWI295818B (en) | ||
| US6382609B1 (en) | Chuck table | |
| TWI634671B (en) | Lift off method | |
| WO2019220666A1 (en) | Workpiece separation device and workpiece separation method | |
| CN113838778A (en) | Laser bonding device that separates | |
| JP2008306119A (en) | Separator and separation method | |
| CN115335979A (en) | Substrate processing method and substrate processing apparatus | |
| JP2017204557A (en) | Wafer processing method | |
| JP5926700B2 (en) | Support body separating apparatus and support body separating method | |
| CN113795907A (en) | Substrate holder, substrate bonding apparatus, and substrate bonding method | |
| CN113851396A (en) | Objective table assembly and laser de-bonding device | |
| CN113851414A (en) | Laser de-bonding method | |
| JPWO2020213479A5 (en) | ||
| JPH11297793A (en) | Chip thrust-up device and die-bonding device using the same | |
| KR20220158024A (en) | Substrate processing method and substrate processing apparatus | |
| CN113838777B (en) | Detection control system for laser de-bonding | |
| JP2007081352A (en) | Gradient-vibration-type film sheet expander | |
| JP6017388B2 (en) | Manufacturing method of semiconductor device | |
| KR102617347B1 (en) | Die ejector and die supplying apparatus including the same | |
| JP3117326B2 (en) | Semiconductor chip removal device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |