CN111176070B - Negative photoresist composition and use thereof - Google Patents
Negative photoresist composition and use thereof Download PDFInfo
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- CN111176070B CN111176070B CN201811338084.4A CN201811338084A CN111176070B CN 111176070 B CN111176070 B CN 111176070B CN 201811338084 A CN201811338084 A CN 201811338084A CN 111176070 B CN111176070 B CN 111176070B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Abstract
A negative photoresist composition comprising: a bisphenol resin, which is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound; a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound with another aldehyde compound; a photoacid generator; a cross-linking agent; an additive; and a solvent. The invention further relates to the use of the negative photoresist composition for forming inverted trapezoid partition walls for display equipment.
Description
Technical Field
The present invention relates to a negative photoresist composition and use thereof, and more particularly, to a negative photoresist composition having high heat resistance and useful for forming an inverted trapezoidal pattern and use thereof.
Background
In the fabrication of display devices (e.g., organic light emitting diode display devices), negative photoresist is often used to form inverted trapezoid spacers, through which electrode lines and organic material layers to be subsequently formed can be separated to avoid occurrence of short circuits.
Currently common negative resist compositions, such as phenolic resins, have a heat resistance temperature of only about 120 degrees. However, the temperature of the sputtering or vapor deposition process for forming the electrode wires and the organic material layer is often higher than 200 ℃, so that the common phenolic resin cannot be applied to the subsequent sputtering or vapor deposition process because of low heat resistance.
In addition to phenolic resin, PHS resin (Polyhydroxystyrene resin) or Polyimide resin (Polyimide resin) may be used to form the inverted trapezoid-shaped partition walls; however, PHS resins or polyimide resins are costly. In addition, bisphenol a resin may form a trapezoid-shaped partition wall, but bisphenol a contained in bisphenol a resin (similar to bisphenol F resin synthesis method) is an environmental hormone and is harmful to the environment. In addition, other bisphenol resins having special functional groups solve the problem, but suffer from the problems of complicated synthesis and high cost.
In view of the foregoing, there is a need to develop a negative photoresist composition that can form inverted trapezoidal spacers and that has high temperature resistance, low cost and/or environmental friendliness.
Disclosure of Invention
The invention mainly aims to provide a negative photoresist composition which can form an inverted trapezoid pattern after exposure and development, and the formed pattern has the characteristic of high temperature resistance.
The negative photoresist composition of the present invention comprises: a bisphenol resin, which is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound; a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound with another aldehyde compound; a photoacid generator; a cross-linking agent; an additive; and a solvent.
A typical negative photoresist composition, such as a phenolic resin, has a heat resistance temperature of only about 120 degrees, and therefore does not have a high temperature resistance property, and cannot be adapted to a high temperature (more than 200 degrees) sputtering or vapor deposition process after forming a spacer of a display device. As for bisphenol a resin, it is harmful to the environment; other bisphenol resins having special functional groups have problems of complex synthesis and high cost. Therefore, in the negative photoresist composition, by combining bisphenol resin and phenolic resin, the formed photoresist pattern has the characteristics of high temperature resistance and/or good pattern, and can be suitable for a high-temperature sputtering or vapor plating process after the forming of the partition wall of the display equipment. In addition, in the negative photoresist composition of the invention, the bisphenol resin is alkali-soluble resin obtained by condensing bisphenol F and aldehyde compounds, thereby achieving the effects of low cost and/or environmental friendliness. In addition, the negative photoresist composition of the invention can form inverted trapezoid patterns after a yellow light lithography process, belongs to patterns with longer upper bottoms, and can be further applied to partition walls for display equipment.
In the negative photoresist composition of the present invention, the bisphenol resin may be present in an amount of 4 to 30wt%, the phenolic resin may be present in an amount of 4 to 40wt%, the photoacid generator may be present in an amount of 0.05 to 5wt%, the crosslinking agent may be present in an amount of 3 to 20wt%, the additive may be present in an amount of 0.05 to 5wt%, and the balance being the solvent.
In the negative photoresist composition of the present invention, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound; more specifically, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F with formaldehyde. Wherein the molecular weight of the bisphenol resin is not particularly limited; in one embodiment of the present invention, the molecular weight of the bisphenol resin is between 5000 and 20000; in another embodiment of the invention, the molecular weight of the bisphenol is between 8000 and 15000; in yet another embodiment of the present invention, the bisphenol resin has a molecular weight of 10000 to 12000.
In the negative photoresist composition of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing a phenolic compound with an aldehyde compound; more specifically, the phenolic resin is an alkali-soluble resin obtained by condensing a phenolic compound with formaldehyde. Wherein the phenolic compound is selected from the group consisting of phenol, methylphenol, dimethylphenol, trimethylphenol and combinations thereof. In one embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol and p-methylphenol with formaldehyde; the ratio of intermediate methylphenol to p-methylphenol may be between 3:1 and 1:3, for example, the ratio of m-methylphenol to p-methylphenol is 3:2. In another embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol with formaldehyde; the ratio of intermediate methylphenol, p-methylphenol and dimethylphenol (including 2, 4-dimethylphenol and 2, 5-dimethylphenol) may be between 6:6:1 and 2:2:1, for example, the ratio of m-methylphenol, p-methylphenol and dimethylphenol (including 2, 4-dimethylphenol and 2, 5-dimethylphenol) may be 4.5:4.5:1. In yet another embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol and 2,3, 5-trimethylphenol with formaldehyde; the ratio of intermediate methylphenol to 2,3, 5-trimethylphenol may be between 9:1 and 5:1, for example the ratio of m-methylphenol to 2,3, 5-trimethylphenol is 9:1.
In the negative photoresist composition of the present invention, the composition or molecular weight of the phenolic resin is not particularly limited; in one embodiment of the present invention, the molecular weight of the phenolic resin is between 1500 and 40000; in another embodiment of the invention, the molecular weight of the phenolic resin is between 2000 and 35000; in yet another embodiment of the present invention, the molecular weight of the phenolic resin is between 2200 and 30000.
In the negative photoresist composition of the present invention, the kind of the photoacid generator is not particularly limited as long as it is a compound capable of generating an acid upon exposure to active radiation. Among them, photoacid generators such as triazines (triazine) and oxime sulfonates (oxime sulfonates) can be used as the photoacid generator. Specific examples of the triazine-based photoacid generator include, but are not limited to, 2,4-bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1,3,5-triazine (2, 4-Bis (trichloromethyl) -6- [1-4- (methoxyl) workbench ] -1,3, 5-triazine), 2,4-bis (trichloromethyl) -6- [2- (5-methyl-2-furyl) acetyl ] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3, 5-diethoxyphenyl) acetyl ] -s-triazine, or 2,4-bis (trichloromethyl) -6- (3-bromo-4-methoxy) phenylacetylphenyl-s-triazine. Specific examples of the oxime sulfonate photoacid generator include, but are not limited to, 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imine ] -3 (2H) -thiophene-benzylidene-phenylacetonitrile (Benzenzenecarboxyimino), 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imino ] -3 (2H) -thianylidene), α - (2-propylsulfonyloxy-iminothiophene-3-enyl-o-methylbenzonitrile (2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imino ] -3 (2H) -thianylidene ] -benzeneacetonitrate), or α - (trifluoromethylsulfonyloxy) phenylacetonitrile.
In the negative photoresist composition of the present invention, the kind of the crosslinking agent is not particularly limited as long as the crosslinking reaction is performed by the acid-induced photoresist composition. Among them, melamine resin, benzoguanamine (benzoguanamine) resin, alkoxylated melamine resin, alkoxylated urea resin, and other alkoxylated amine resins can be used as the crosslinking agent. Specific examples of the alkoxylated amine resin include, but are not limited to, polymer methides of 1,3,5-Triazine-2,4,6-Triamine with formaldehyde and methylal (1, 3,5-Triazine-2,4,6-Triamine, polymer with formaldehyde methylated), methoxy-methylated melamine resin, ethoxy-methylated melamine resin, propoxy-methylated melamine resin, methoxy-methylated urea resin, ethyl-methylated urea resin, or propoxy-methylated urea resin. The above-mentioned crosslinking agents may be used singly or in combination of two or more thereof, without particular limitation.
In the negative photoresist composition of the present invention, the kind of additive may be a monoamine compound or a compound absorbing active radiation. Here, the kind of the amine compound is not particularly limited, and may be aliphatic, aromatic or heterocyclic primary, secondary or tertiary amines. Specific examples of fatty amines include, but are not limited to, trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, diethylamine, di-n-ethylamine, or Tributylamine (Tributylamine). Specific examples of aromatic amines include, but are not limited to, aniline, N-methylaniline, N' -dimethylaniline, or diphenylamine. Specific examples of heterocyclic amines include, but are not limited to, pyridine, or o-picoline. The above amine compound additives may be used alone or in combination of two or more thereof, without particular limitation.
Further, the active radiation absorbing compound may be a bisazide compound having an azide group at both ends, an azo dye, a methine dye, curcumin, xanthone, a dialkylamine compound or 1, 2-dicyanoethylene. Specific examples of the bisazide compound include 4,4 '-bisazidobenzophenone or 4,4' -bisazidodiphenylmethane. The active radiation absorbing compound additives mentioned above may be used singly or in combination of two or more.
In the negative photoresist composition of the present invention, the kind of solvent is not particularly limited as long as the components in the negative photoresist composition are soluble therein. Specific examples of the solvent include, but are not limited to, propylene glycol monomethyl ether acetate (Propylene Glycol Monomethyl EtherAcetate), propylene glycol methyl ether (Propylene Glycol Monomethyl Ether), lactic acid esters (e.g., ethyl Lactate), methyl Lactate), propylene glycol monoalkyl ethers (e.g., propylene glycol monoethyl ether, propylene glycol monopropyl ether), ketones (e.g., cyclohexanone), or lactones (e.g., γ -butyrolactone). The above solvents may be used singly or in combination of two or more kinds, without particular limitation.
The negative photoresist composition of the present invention may further comprise a surfactant; wherein the surfactant may be present in an amount of between 0.001wt% and 0.1 wt%.
In addition, the invention further provides the application of the negative photoresist composition for forming the inverted trapezoid partition wall for display equipment. The display device may be a liquid crystal display device, an organic light emitting diode display device, or an inorganic light emitting diode display device. In one embodiment of the present invention, the display device is an organic light emitting diode display device.
Detailed Description
The following embodiments of the present invention are described in detail by way of examples, and other advantages and effects of the present invention will be readily apparent to those skilled in the art from the disclosure herein. The invention may be practiced or carried out in other embodiments and details of the present description may be varied from various points of view and applications without departing from the spirit of the invention.
The present invention will be described more specifically by examples, but these examples are not intended to limit the scope of the present invention. In the following examples and comparative examples, temperatures are given in degrees celsius, parts and percentages are by weight unless otherwise indicated. The relation between parts by weight and parts by volume is the same as the relation between kilograms and liters.
In the following examples and comparative examples of the present invention, bisphenol-based resin used was a polymer obtained by condensing bisphenol F with Formaldehyde, which is a polymer of Formaldehyde and 4,4'-bis (hydroxyphenyl) methane (polymer with4,4' -Bis (hydroxylphenyl) methyl), and the molecular weight was 10000 to 12000, and the structure was shown as the following formula (I):
in the following examples and comparative examples of the present invention, there are four types of phenolic resins used. The first is an alkali-soluble resin obtained by condensing m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol with formaldehyde, wherein the molecular weight of the m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol is 45:45:10, and the molecular weight is about 15000. The second is identical to the first, except that the molecular weight is about 4400. The third is an alkali-soluble resin obtained by condensing m-methylphenol and p-methylphenol with formaldehyde, wherein the ratio of methylphenol to p-methylphenol is 6:4 and the molecular weight is about 2200. The fourth is an alkali-soluble resin obtained by condensing m-methylphenol and 2,3, 5-trimethylphenol with formaldehyde, wherein the ratio of methylphenol to 2,3, 5-trimethylphenol is 9:1, and the molecular weight is about 30000.
In the following examples and comparative examples of the present invention, the structure of the crosslinking agent used is shown in the following formula (II).
In the following examples and comparative examples of the present invention, two kinds of photoacid generators were used in total. The first is 2,4-bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1,3,5-triazine, as shown in formula (III-1) below. The second is represented by the following formula (III-2), which is 2-methyl-alpha- [2- [ [ (propylsulfonyl) oxy ] imine ] -3 (2H) -thiophenylidene phenylacetonitrile.
In the following examples and comparative examples of the present invention, tributylamine and tripentylamine were used as additives, as shown in the following formulas (IV-1) and (IV-2).
In the following examples and comparative examples of the present invention, the surfactant composition used includes: propylene glycol methyl ether acetate (1-Methoxy-2-propyl acetate) with the content of 75-85wt%; and a fluoropolymer (Fluorinated polymer) in an amount of 15 to 25wt%.
In the following examples and comparative examples of the present invention, the solvent used was Propylene Glycol Monomethyl Ether Acetate (PGMEA), as shown in the following formula (V).
Examples 1 to 11 and comparative examples 1 to 2
The negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 were prepared from bisphenol resin, phenol resin, photoacid generator, crosslinking agent, additive, solvent and surfactant according to the composition formulations shown in tables 1 to 3 below.
TABLE 1
Phenolic aldehyde A: the molecular weight of the m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol is 45:45:10, and is about 15000.
TABLE 2
Phenolic B: the molecular weight of the m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol is 45:45:10, and the molecular weight is about 4400.
Phenolic aldehyde C: m-methylphenol to p-methylphenol is 6:4 and has a molecular weight of about 2200.
Phenolic D: m-methylphenol 2,3, 5-trimethylphenol 9:1, molecular weight about 30000.
TABLE 3 Table 3
The prepared negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 were coated on a glass substrate and baked on a hot plate at 110℃for 90 seconds to form a film having a film thickness of 2.0. Mu.m. Then, exposure was performed at 50mJ to 200mJ using a broadband exposure machine (brand SEIWA, model UMX 5000), and baked on a hot plate at 100deg.C for 120 seconds (PEB). The solution was developed with 2.38% aqueous tetramethylammonium hydroxide (TMAH) at room temperature for 90 seconds and rinsed with deionized water for 30 seconds. Thus, patterns formed on the glass substrate by the negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 were obtained, and the sidewall shape of each resist pattern after development was observed by SEM, and the results are shown in table 4 below. Although not shown, the SEM cross-sectional views of the resist patterns of examples 1 to 10 were all of inverted trapezoids (or reverse cones), in which the inclination angle (pattern inner angle) to the side of the substrate was measured and ranged from 120 ° to 150 °.
To verify whether the resists obtained by exposing the negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 developed have high temperature resistance, the patterns obtained by each resist were baked in an oven at 210℃for 15 minutes. After baking, the cross-sectional shape of each resist pattern was observed by SEM, whereby the heat resistance of the resist was judged, and the results are shown in table 4 below.
TABLE 4 Table 4
The sidewall shape of the photoresist after development was observed by SEM. X: the side walls have severe protrusions; delta: the side walls have a slight protrusion; o: the sidewalls are free of protrusions.
The heat resistance was determined by SEM image after post-baking at 210℃for 15 minutes. X: the reverse taper shape cannot be maintained; o: the reverse taper shape can be maintained.
As shown in the results of comparative examples 1 and 2 in Table 4, bisphenol F resin or phenol resin was used alone, and the heat resistance was poor. As shown in the results of examples 1 to 10 of table 4, when bisphenol-based resin containing bisphenol F and phenol-based resin were used in combination with each other, the problem of poor heat resistance was effectively solved. Meanwhile, as shown in the results of examples 6 to 9 of table 4, the molecular weight of the phenolic resin had little effect on the heat resistance of the resist.
TABLE 5
The pattern formed by the negative resist composition of example 11 on the glass substrate was obtained by performing the exposure and development process in the same manner as in the previous examples 1 to 10, and the sidewall shape of the developed resist pattern was observed by SEM. The results show that the resist pattern of example 11 has an inclination angle (pattern internal angle) of about 120 ° with respect to the substrate side, and belongs to an inverted trapezoid (or reverse taper).
Further, the pattern obtained in example 11 was baked in an oven at 290℃for 15 minutes. The resist profile after baking was observed by SEM. The results showed that the resist formed with the negative resist composition of example 11 still maintained an inverted trapezoid shape, indicating good heat resistance.
The above embodiments are merely illustrative, and the claimed protection scope of the present invention should be defined by the claims rather than limited to the above embodiments.
Claims (10)
1. A negative photoresist composition comprising:
a bisphenol resin, which is an alkali-soluble resin obtained by condensing bisphenol F with an aldehyde compound;
a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound with another aldehyde compound;
a photoacid generator;
a cross-linking agent;
an additive; and
a solvent;
wherein the bisphenol resin is between 4wt% and 30wt%, the phenolic resin is between 4wt% and 40wt%, the photoacid generator is between 0.05wt% and 5wt%, the cross-linking agent is between 3wt% and 20wt%, the additive is between 0.05wt% and 5wt%, and the rest is the solvent;
wherein the phenolic compound is selected from the group consisting of phenol, methylphenol, dimethylphenol, trimethylphenol and combinations thereof.
2. The negative photoresist composition of claim 1, wherein the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol and p-methylphenol with formaldehyde; an alkali-soluble resin obtained by condensing m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol with formaldehyde; or an alkali-soluble resin obtained by condensing m-methylphenol and 2,3, 5-trimethylphenol with formaldehyde.
3. The negative photoresist composition of claim 1, wherein the molecular weight of the phenolic resin is between 1500 and 40000.
4. The negative photoresist composition of claim 1, wherein the photoacid generator is 2,4-bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1,3,5-triazine, 2,4-bis (trichloromethyl) -6- [2- (5-methyl-2-furyl) acetyl ] -s-triazine, 2,4-bis (trichloromethyl) -6- [2- (3, 5-diethoxyphenyl) acetyl ] -s-triazine, 2,4-bis (trichloromethyl) -6- (3-bromo-4-methoxy) phenylacetylphenyl-s-triazine, 2-methyl- α - [2- [ [ [ (propylsulfonyl) oxy ] imine ] -3 (2H) -thiophenylideneacetonitrile, α - (2-propanesulfonyloxyiminothiophen-3-enyl-o-methylbenzonitrile), α - (trifluoromethylsulfonyloxy) oxyimino) -phenyl acetonitrile, or a mixture thereof.
5. The negative-working photoresist composition of claim 1, wherein the crosslinking agent is a polymer methide of 1,3,5-triazine-2,4,6-triamine with formaldehyde and methylal, a methoxy-methylated melamine resin, an ethoxy-methylated melamine resin, a propoxy-methylated melamine resin, a methoxy-methylated urea resin, an ethyl-methylated urea resin, a propoxy-methylated urea resin, or a mixture thereof.
6. The negative resist composition according to claim 1, wherein the additive is an amine compound or a compound that absorbs active radiation.
7. The negative photoresist composition of claim 6, wherein the amine compound is trimethylamine, triethylamine, tri-N-propylamine, triisopropylamine, diethylamine, di-N-ethylamine, tributylamine, aniline, N-methylaniline, N' -dimethylaniline, diphenylamine, pyridine, o-methylpyridine, or a mixture thereof.
8. The negative resist composition according to claim 6, wherein the active radiation absorbing compound is a bis-azido compound having azido groups at both ends, an azo dye, a methine dye, curcumin, xanthone, a dialkylamine compound, 1, 2-dicyanoethylene or a mixture thereof.
9. Use of a negative photoresist composition according to any one of claims 1 to 8 for forming inverted trapezoidal spacers for a display device.
10. The use of claim 9, wherein the display device is an organic light emitting diode display device.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200608142A (en) * | 2004-03-31 | 2006-03-01 | Zeon Corp | Radiation-sensitive resin composition |
| CN1987650A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Negative light resistance agent composition |
| CN101657758A (en) * | 2007-04-17 | 2010-02-24 | 布鲁尔科技公司 | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride |
| JP2016151583A (en) * | 2015-02-16 | 2016-08-22 | ナガセケムテックス株式会社 | Positive type photosensitive resin composition |
| TW201738658A (en) * | 2016-03-30 | 2017-11-01 | 東友精細化工有限公司 | Negative-type photosensitive resin composition |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9709710B2 (en) * | 2015-03-06 | 2017-07-18 | Samsung Sdi Co., Ltd. | Device including light blocking layer and method of patterning the light blocking layer |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200608142A (en) * | 2004-03-31 | 2006-03-01 | Zeon Corp | Radiation-sensitive resin composition |
| CN1987650A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Negative light resistance agent composition |
| CN101657758A (en) * | 2007-04-17 | 2010-02-24 | 布鲁尔科技公司 | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride |
| JP2016151583A (en) * | 2015-02-16 | 2016-08-22 | ナガセケムテックス株式会社 | Positive type photosensitive resin composition |
| TW201738658A (en) * | 2016-03-30 | 2017-11-01 | 東友精細化工有限公司 | Negative-type photosensitive resin composition |
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