CN111176070A - Negative photoresist composition and use thereof - Google Patents
Negative photoresist composition and use thereof Download PDFInfo
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- CN111176070A CN111176070A CN201811338084.4A CN201811338084A CN111176070A CN 111176070 A CN111176070 A CN 111176070A CN 201811338084 A CN201811338084 A CN 201811338084A CN 111176070 A CN111176070 A CN 111176070A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
Abstract
A negative photoresist composition comprising: bisphenol resin, which is alkali-soluble resin obtained by condensing bisphenol F and aldehyde compound; a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound and another aldehyde compound; a photoacid generator; a cross-linking agent; an additive; and a solvent. The present invention further relates to the use of the negative photoresist composition for forming inverted trapezoidal partition walls for a display device.
Description
Technical Field
The present invention relates to a negative photoresist composition and use thereof, and more particularly, to a negative photoresist composition having high heat resistance, which can be used to form an inverted trapezoidal pattern, and use thereof.
Background
In the fabrication of display devices (e.g., organic light emitting diode display devices), negative photoresist is often used to form inverted trapezoidal spacers, through which subsequently formed electrode lines and organic material layers can be separated, so as to avoid short circuits.
Currently, the heat resistant temperature of a common negative photoresist composition, such as a phenolic resin, is only about 120 ℃. However, the temperature of the sputtering or evaporation process for forming the electrode lines and the organic material layer is often higher than 200 ℃, so that the common phenolic resin has low heat resistance and cannot be applied to the subsequent sputtering or evaporation process.
In addition to the phenol resin, PHS resin (Polyhydroxystyrene resin) or Polyimide resin (Polyimide resin) may be used to form the partition walls in the shape of an inverted trapezoid; however, PHS resin or polyimide resin is expensive. Further, although bisphenol a resin may form inverted trapezoidal partition walls, bisphenol a contained in bisphenol a resin (as in the method of synthesizing bisphenol F resin) is an environmental hormone and is harmful to the environment. In addition, other bisphenol resins having special functional groups can solve this problem, but they have problems of complicated synthesis and high cost.
In view of the above, there is a need to develop a negative photoresist composition that can form reverse trapezoidal spacers and has the effects of high temperature resistance, low cost and/or environmental friendliness.
Disclosure of Invention
The main object of the present invention is to provide a negative photoresist composition, which can form an inverse trapezoidal pattern after exposure and development, and the formed pattern has a high temperature resistance.
The negative photoresist composition of the present invention comprises: bisphenol resin, which is alkali-soluble resin obtained by condensing bisphenol F and aldehyde compound; a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound and another aldehyde compound; a photoacid generator; a cross-linking agent; an additive; and a solvent.
Since the heat resistant temperature of a conventional negative photoresist composition, such as a phenolic resin, is only about 120 degrees, it does not have the high temperature resistant characteristic, and thus it cannot be adapted to a high temperature (200 degrees or higher) sputtering or evaporation process after the formation of the spacer wall of the display device. As for bisphenol a resins, it is harmful to the environment; other bisphenol resins with special functional groups have the problems of complex synthesis and high cost. Therefore, in the negative photoresist composition of the present invention, the bisphenol resin and the phenolic resin are used together, so that the formed photoresist pattern has the characteristics of high temperature resistance and/or good pattern, and can be adapted to the high temperature sputtering or evaporation process after the formation of the spacer wall of the display device. In addition, in the negative photoresist composition of the present invention, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F and an aldehyde compound, thereby achieving the effects of low cost and/or environmental friendliness. In addition, the negative photoresist composition of the invention can form an inverted trapezoidal pattern after a yellow light lithography process, belongs to a pattern with a longer upper bottom, and can be further applied to partition walls for display equipment.
In the negative photoresist composition of the present invention, the amount of the bisphenol resin may be 4 wt% to 30 wt%, the amount of the phenol resin may be 4 wt% to 40 wt%, the amount of the photoacid generator may be 0.05 wt% to 5 wt%, the amount of the crosslinking agent may be 3 wt% to 20 wt%, the amount of the additive may be 0.05 wt% to 5 wt%, and the balance of the solvent.
In the negative resist composition of the present invention, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F and an aldehyde compound; more specifically, the bisphenol resin is an alkali-soluble resin obtained by condensing bisphenol F with formaldehyde. Wherein the molecular weight of the bisphenol resin is not particularly limited; in one embodiment of the present invention, the molecular weight of the bisphenol resin is between 5000 and 20000; in another embodiment of the present invention, the molecular weight of the bisphenol resin is between 8000 and 15000; in yet another embodiment of the present invention, the molecular weight of the bisphenol resin is between 10000 and 12000.
In the negative resist composition of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing a phenolic compound and an aldehyde compound; more specifically, the phenol resin is an alkali-soluble resin obtained by condensing a phenol compound with formaldehyde. Wherein the phenolic compound is selected from the group consisting of phenol, methylphenol, dimethylphenol, trimethylphenol and combinations thereof. In one embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methyl phenol and p-methyl phenol with formaldehyde; the ratio of the meta-methylphenol to the para-methylphenol may be between 3: 1 and 1: 3, for example, the ratio of the meta-methylphenol to the para-methylphenol is 3: 2. In another embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol, p-methylphenol, 2, 4-dimethylphenol, 2, 5-dimethylphenol and formaldehyde; the ratio of intermediate methylphenol, p-methylphenol and dimethylphenol (including 2, 4-dimethylphenol and 2, 5-dimethylphenol) may be between 6: 1 and 2: 1, for example, the ratio of m-methylphenol, p-methylphenol and dimethylphenol (including 2, 4-dimethylphenol and 2, 5-dimethylphenol) is 4.5: 1. In another embodiment of the present invention, the phenolic resin is an alkali-soluble resin obtained by condensing m-methylphenol, 2, 3, 5-trimethylphenol and formaldehyde; the ratio of the meta-methylphenol to the 2, 3, 5-trimethylphenol may be between 9: 1 and 5: 1, for example, the ratio of the meta-methylphenol to the 2, 3, 5-trimethylphenol is 9: 1.
In the negative resist composition of the present invention, the composition or molecular weight of the phenolic resin is not particularly limited; in an embodiment of the present invention, the molecular weight of the phenolic resin is between 1500 and 40000; in another embodiment of the present invention, the phenolic resin has a molecular weight between 2000 and 35000; in yet another embodiment of the present invention, the phenolic resin has a molecular weight of 2200 to 30000.
in the negative resist composition of the present invention, the kind of the photoacid generator is not particularly limited as long as it is a compound capable of generating an acid upon exposure to active radiation, and specific examples of the triazine photoacid generator include, but are not limited to, 2, 4-Bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1, 3, 5-triazine (2, 4-Bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1, 3, 5-triazine), 2, 4-Bis (trichloromethyl) -6- [2- (5-methyl-2-furyl) acetyl ] -s-triazine, 2, 4-Bis (trichloromethyl) -6- [2- (3, 5-diethoxyphenyl) acetyl ] -s-triazine, or 2, 4-Bis (trichloromethyl) -6- [2- (3-diethoxyphenyl) acetyl ] -s-triazine, or 2, 4-Bis (trichloromethyl) -6- [ 3-methoxy-2-sulfinyl ] sulfenyl ] -s-triazine, and specific examples of the above-Bis (trichloromethyl) -2, 4-tris (trichloromethyl) -6- [2- (3-methoxy) sulfonyl ] -s-phenyl-thioimino ] sulfenyl ] -s-2, 3, or 2-tris (bromopropylthionylimine, 2-Bis (trichloromethyl) -2-iodosulfenyl) -2-thionylimine.
In the negative photoresist composition of the present invention, the kind of the crosslinking agent is not particularly limited as long as the crosslinking reaction of the photoresist composition is initiated by an acid. Among them, as the crosslinking agent, an oxyalkylated amine resin such as a melamine resin, a benzoguanamine resin, an oxyalkylated melamine resin, and an oxyalkylated urea resin can be used. Specific examples of the alkoxyalkylated amine resin include, but are not limited to, polymer methylated compounds of 1, 3, 5-Triazine-2, 4, 6-Triamine and formaldehyde and methylal (1, 3, 5-Triazine-2, 4, 6-Triamine, polymer with formaldehydemethylated), methoxymethylated melamine resin, ethoxymethylated melamine resin, propoxymethylated melamine resin, methoxymethylated urea resin, ethylmethylated urea resin, or propoxymethylated urea resin. The above-mentioned crosslinking agents may be used singly or in admixture of two or more kinds without particular limitation.
In the negative photoresist composition of the present invention, the kind of the additive may be an amine compound or an active radiation absorbing compound. Here, the kind of the amine compound is not particularly limited, and may be aliphatic, aromatic or heterocyclic primary, secondary and tertiary amines. Specific examples of fatty amines include, but are not limited to, trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, diethylamine, di-n-ethylamine, or Tributylamine (Tributylamine). Specific examples of aromatic amines include, but are not limited to, aniline, N-methylaniline, N' -dimethylaniline, or diphenylamine. Specific examples of heterocyclic amines include, but are not limited to, pyridine, or o-picoline. The amine compound additive may be used alone or in combination of two or more, without particular limitation.
The active radiation-absorbing compound may be a bisazido compound having azide groups at both ends, an azo dye, a methine dye, curcumin, xanthone, a dialkylamino compound, or 1, 2-dicyanoethylene. Specific examples of the bisazide compound include 4, 4 '-bisazide benzophenone or 4, 4' -bisazide diphenylmethane. The above-mentioned radioactive ray-absorbing compound additives may be used singly or in admixture of two or more.
In the negative photoresist composition of the present invention, the kind of the solvent is not particularly limited as long as the components in the negative photoresist composition can be dissolved therein. Specific examples of the solvent include, but are not limited to, Propylene Glycol Monomethyl Ether acetate (Propylene Glycol Monomethyl Ether acetate), Propylene Glycol methyl Ether (Propylene Glycol Monomethyl Ether), lactic acid esters (e.g., Ethyl Lactate, methyl Lactate), Propylene Glycol monoalkyl ethers (e.g., Propylene Glycol monoethyl Ether, Propylene Glycol monopropyl Ether), ketones (e.g., cyclohexanone), or lactones (e.g., γ -butyrolactone). The above solvents may be used alone or in combination of two or more, without particular limitation.
The negative photoresist composition of the present invention may further comprise a surfactant; wherein the content of the surfactant can be between 0.001 wt% and 0.1 wt%.
In addition, the invention further provides the application of the negative photoresist composition, which is used for forming the inverted trapezoidal partition wall for the display device. The display device may be a liquid crystal display device, an organic light emitting diode display device, or an inorganic light emitting diode display device, among others. In an embodiment of the invention, the display device is an organic light emitting diode display device.
Detailed Description
The following embodiments are provided to illustrate the present invention, and other advantages and effects of the present invention will be apparent to those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
The present invention will be described more specifically by way of examples, which are not intended to limit the scope of the present invention. In the following examples and comparative examples, temperatures are given in degrees centigrade, parts and percentages are by weight, unless otherwise indicated. Parts by weight relate to parts by volume as kilograms relate to liters.
In the following examples and comparative examples of the present invention, the bisphenol resin used is a polymer obtained by condensing bisphenol F and Formaldehyde, which is a polymer of Formaldehyde and 4, 4 '-Bis (hydroxyphenyl) methane (formaldehydes, polymerwith4, 4' -Bis (hydroxyphenyl) methane), has a molecular weight of 10000 to 12000, and has the following structure represented by the following formula (I):
in the following examples and comparative examples of the present invention, four phenolic resins were used. The first is an alkali-soluble resin obtained by condensing m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol with formaldehyde, wherein m-methylphenol, p-methylphenol, 2, 4-dimethylphenol and 2, 5-dimethylphenol are 45: 10, and the molecular weight is about 15000. The second was identical to the first except that the molecular weight was about 4400. The third is an alkali soluble resin obtained by condensing m-methyl phenol and p-methyl phenol with formaldehyde, wherein the ratio of m-methyl phenol to p-methyl phenol is 6: 4, and the molecular weight is about 2200. The fourth is an alkali soluble resin obtained by condensing m-methyl phenol and 2, 3, 5-trimethyl phenol with formaldehyde, wherein the ratio of m-methyl phenol to 2, 3, 5-trimethyl phenol is 9: 1, and the molecular weight is about 30000.
In the following examples and comparative examples of the present invention, the structure of the crosslinking agent used is shown by the following formula (II).
in the following examples and comparative examples of the present invention, two kinds of photoacid generators were used, the first one being 2, 4-bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1, 3, 5-triazine as shown in the following formula (III-1), and the second one being 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imine ] -3(2H) -thienylenephenylacetonitrile as shown in the following formula (III-2).
In the following examples and comparative examples of the present invention, tributylamine and tripentylamine were used as additives, as shown by the following formulas (IV-1) and (IV-2).
In the following examples and comparative examples of the present invention, the surfactant composition used included: propylene glycol methyl ether acetate (1-Methoxy-2-propyl acetate) with a content of 75-85 wt%; and a fluoropolymer (fluorinated polymer) in an amount of 15 to 25 wt%.
In the following examples and comparative examples of the present invention, the solvent used was Propylene Glycol Monomethyl Ether Acetate (PGMEA) represented by the following formula (V).
Examples 1 to 11 and comparative examples 1 to 2
Bisphenol resins, phenol resins, photoacid generators, crosslinking agents, additives, solvents, and surfactants were formulated into negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 according to the composition formulas shown in the following tables 1 to 3.
TABLE 1
Phenolic aldehyde A: m-methylphenol p-methylphenol 2, 4-dimethylphenol and 2, 5-dimethylphenol are 45: 10, and have a molecular weight of about 15000.
TABLE 2
Phenolic aldehyde B: m-methylphenol p-methylphenol 2, 4-dimethylphenol and 2, 5-dimethylphenol are 45: 10, and have a molecular weight of about 4400.
Phenolic aldehyde C: the ratio of m-methylphenol to p-methylphenol was 6: 4 and the molecular weight was about 2200.
And (2) phenolic aldehyde D: the ratio of m-methylphenol to 2, 3, 5-trimethylphenol is 9: 1, and the molecular weight is about 30000.
TABLE 3
The negative resist compositions of examples 1 to 10 and comparative examples 1 to 2 thus prepared were coated on a glass substrate and baked on a hot plate at 110 ℃ for 90 seconds to form a film having a thickness of 2.0 μm. Then, exposure was performed at 50mJ to 200mJ using a broadband exposure machine (SeIWA brand, model UMX5000), and further baked on a hot plate at 100 ℃ for 120 seconds (PEB). The image was developed with 2.38% aqueous tetramethylammonium hydroxide (TMAH) at room temperature for 90 seconds and then rinsed with deionized water for 30 seconds. Thus, patterns formed on the glass substrate by the negative photoresist compositions of examples 1 to 10 and comparative examples 1 to 2 were obtained, and the sidewall shape of each photoresist pattern after development was observed by SEM, and the results are shown in table 4 below. Although not shown, the SEM cross-sectional views of the photoresist patterns of examples 1 to 10 all have inverted trapezoidal (or inverse tapered) shapes, in which the inclination angle (pattern internal angle) to the substrate side surface is measured within an angle range of 120 ° to 150 °.
In order to verify whether the photoresists obtained after exposure and development of the negative photoresist compositions of examples 1 to 10 and comparative examples 1 to 2 have high temperature resistance, the patterns obtained from each photoresist were baked in an oven at 210 ℃ for 15 minutes. The cross-sectional shape of each resist pattern after baking was observed by SEM to determine the heat resistance of the resist, and the results are shown in table 4 below.
TABLE 4
Sidewall shape the resist sidewall shape after development was observed by SEM. X: the side wall has severe protrusions; Δ: the side wall has a slight protrusion; o: the sidewalls are free of protrusions.
The heat resistance was evaluated by determining the cross-sectional shape of the resist from SEM images after post-baking at 210 ℃ for 15 minutes. X: the inverse tapered shape cannot be maintained; o: the inverse tapered shape can be maintained.
As shown by the results of comparative examples 1 and 2 in Table 4, the use of bisphenol F resin or phenol resin alone has a problem of poor heat resistance. As shown in the results of examples 1 to 10 in Table 4, when bisphenol F-containing bisphenol resin and phenol resin were used in combination with each other, the problem of poor heat resistance was effectively solved. Meanwhile, as shown in the results of examples 6 to 9 in table 4, the molecular weight of the phenolic resin does not greatly affect the heat resistance of the photoresist.
TABLE 5
The same method as in examples 1 to 10 was used to perform an exposure and development process, so as to obtain the pattern formed on the glass substrate by the negative photoresist composition of example 11, and the sidewall shape of the developed photoresist pattern was observed by SEM. The results show that the photoresist pattern of example 11 has an inclination angle (pattern internal angle) of about 120 ° with respect to the substrate side surface, and is an inverted trapezoid (or inverse cone).
In addition, the pattern obtained in example 11 was baked in an oven at 290 ℃ for 15 minutes. The cross-sectional shape of the baked photoresist was observed by SEM. The results show that the photoresist formed from the negative photoresist composition of example 11 still maintained an inverted trapezoidal shape, indicating good heat resistance.
The above-mentioned embodiments are merely exemplary for convenience of description, and the scope of the present invention is defined by the claims rather than by the limitations of the above-mentioned embodiments.
Claims (12)
1. A negative photoresist composition comprising:
bisphenol resin, which is alkali-soluble resin obtained by condensing bisphenol F and aldehyde compound;
a phenolic resin, which is an alkali-soluble resin obtained by condensing a phenolic compound and another aldehyde compound;
a photoacid generator;
a cross-linking agent;
an additive; and
a solvent.
2. The negative photoresist composition according to claim 1, wherein the amount of the bisphenol resin is between 4 wt% and 30 wt%, the amount of the phenolic resin is between 4 wt% and 40 wt%, the amount of the photoacid generator is between 0.05 wt% and 5 wt%, the amount of the cross-linking agent is between 3 wt% and 20 wt%, the amount of the additive is between 0.05 wt% and 5 wt%, and the balance is the solvent.
3. The negative photoresist composition according to claim 1, wherein the phenolic compound is selected from the group consisting of phenol, methylphenol, dimethylphenol, trimethylphenol and combinations thereof.
4. The negative photoresist composition according to claim 1, wherein the phenolic resin is an alkali-soluble resin obtained by condensing m-and p-methylphenols with formaldehyde; alkali-soluble resin obtained by condensing m-methyl phenol, p-methyl phenol, 2, 4-dimethyl phenol and 2, 5-dimethyl phenol with formaldehyde; or alkali soluble resin obtained by condensing m-methyl phenol, 2, 3, 5-trimethylphenol and formaldehyde.
5. The negative photoresist composition according to claim 1, wherein the phenolic resin has a molecular weight of 1500 to 40000.
6. the negative photoresist composition of claim 1, wherein the photoacid generator is 2, 4-Bis (trichloromethyl) -6- [1-4- (methoxy) naphthyl ] -1, 3, 5-triazine (2, 4-Bis (trichloromethyl) -6- [1-4- (methoxyl) naphthyl ] -1, 3, 5-triazine), 2, 4-Bis (trichloromethyl) -6- [2- (5-methyl-2-furyl) acetyl ] -s-triazine, 2, 4-Bis (trichloromethyl) -6- [2- (3, 5-diethoxyphenyl) acetyl ] -s-triazine, 2, 4-Bis (trichloromethyl) -6- (3-bromo-4-methoxy) phenylacetylphenyl-s-triazine, 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imide ] -3(2H) -thienylidenephetonitrile (benneicetrionitrine, 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] imide ] -3(2H) -thienylidene ] phenylacetonitrile, 2-methyl- α - [2- [ [ (propylsulfonyl) oxy ] -2H) -thionylidene ] -propineb, or a mixture thereof.
7. The negative photoresist composition according to claim 1, wherein the cross-linking agent is 1, 3, 5-Triazine-2, 4, 6-Triamine, a polymer methylated (1, 3, 5-Triazine-2, 4, 6-Triamine, a polymer with formaldehydemethyl), a methoxymethylated melamine resin, an ethoxymethylated melamine resin, a propoxymethylated melamine resin, a methoxymethylated urea resin, an ethylmethylated urea resin, a propoxymethylated urea resin, or a mixture thereof.
8. The negative photoresist composition according to claim 1, wherein the additive is an amine compound or an active radiation absorbing compound.
9. The negative photoresist composition according to claim 8, wherein the amine compound is trimethylamine, triethylamine, tri-N-propylamine, triisopropylamine, diethylamine, di-N-ethylamine, Tributylamine (Tributylamine), aniline, N-methylaniline, N' -dimethylaniline, diphenylamine, pyridine, o-methylpyridine or a mixture thereof.
10. The negative resist composition according to claim 8, wherein the radiation absorbing compound is a bisazido compound having azide groups at both ends, an azo dye, a methine dye, curcumin, xanthone, a dialkylamino compound, 1, 2-dicyanoethylene, or a mixture thereof.
11. Use of the negative photoresist composition according to any one of claims 1 to 10 for forming an inverted trapezoidal partition wall for a display device.
12. The use according to claim 11, wherein the display device is an organic light emitting diode display device.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200608142A (en) * | 2004-03-31 | 2006-03-01 | Zeon Corp | Radiation-sensitive resin composition |
| CN1987650A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Negative light resistance agent composition |
| CN101657758A (en) * | 2007-04-17 | 2010-02-24 | 布鲁尔科技公司 | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride |
| JP2016151583A (en) * | 2015-02-16 | 2016-08-22 | ナガセケムテックス株式会社 | Positive type photosensitive resin composition |
| US20160259095A1 (en) * | 2015-03-06 | 2016-09-08 | Samsung Sdi Co., Ltd. | Device Including Light Blocking Layer and Method of Patterning the Light Blocking Layer |
| TW201738658A (en) * | 2016-03-30 | 2017-11-01 | 東友精細化工有限公司 | Negative-type photosensitive resin composition |
-
2018
- 2018-11-12 CN CN201811338084.4A patent/CN111176070B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200608142A (en) * | 2004-03-31 | 2006-03-01 | Zeon Corp | Radiation-sensitive resin composition |
| CN1987650A (en) * | 2005-12-20 | 2007-06-27 | 财团法人工业技术研究院 | Negative light resistance agent composition |
| CN101657758A (en) * | 2007-04-17 | 2010-02-24 | 布鲁尔科技公司 | Alkaline-resistant negative photoresist for silicon wet-etch without silicon nitride |
| JP2016151583A (en) * | 2015-02-16 | 2016-08-22 | ナガセケムテックス株式会社 | Positive type photosensitive resin composition |
| US20160259095A1 (en) * | 2015-03-06 | 2016-09-08 | Samsung Sdi Co., Ltd. | Device Including Light Blocking Layer and Method of Patterning the Light Blocking Layer |
| TW201738658A (en) * | 2016-03-30 | 2017-11-01 | 東友精細化工有限公司 | Negative-type photosensitive resin composition |
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