CN1106662C

CN1106662C - Electron generating apparatus, image forming apparatus, and method of manufacturing and adjusting the same

Info

Publication number: CN1106662C
Application number: CN96121577A
Authority: CN
Inventors: 藤井明; 鲈英俊; 山口英司
Original assignee: Canon Inc
Current assignee: Canon Inc
Priority date: 1996-01-16
Filing date: 1996-12-18
Publication date: 2003-04-23
Anticipated expiration: 2016-12-18
Also published as: AU7065396A; JPH09259753A; CN1159070A; CA2189391C; KR100249876B1; DE69634072T2; AU708714B2; EP0785564A1; US6144350A; DE69634072D1; CA2189391A1; EP0785564B1; KR970060294A

Abstract

An electron generating apparatus which is hardly influenced by variations in driving voltage, an image forming apparatus using the electron generating apparatus, and a method of manufacturing and adjusting the same. The row wiring layers of a multi-electron-beam source (300) are sequentially selectively switched by a control circuit (302) and applied with a pulse voltage having a value about 1.05 to 1.5 times the maximum value of a normal driving voltage from a DC voltage source (301). The characteristics of all surface conduction electron-emitting devices of the multi-electron-beam source (300) are shifted to the high potential side.

Description

Electron generating, imaging device, and the method for this electron generating of manufacturing

The present invention relates to a kind of electron generating of wherein arranging a plurality of surface conductive electron emission devices, a kind of imaging device that uses this electron generating, and a kind of method of making these devices.

Routinely, two types device, promptly hot cathode and cold cathode device are called electron emission device.The example of cold cathode device is the surface conductive electron emission device, field emission type device (FE type device hereinafter referred to as), and insulator/metal thing/metal mold ballistic device (mim type device hereinafter referred to as).

The known example of FE type device is at " W.P.Dyke and W.W.Dolan; " FieldEmission "; Advance in Electron Physics; 8,89 (1956) ", and narration in " C.A.Spindt; " Physical properties of thin-film field emission cathodes withmolybdenum cones "; J.Appl.Pyhs., 47,5248 (1976) ".

A known example of mim type device is narration in " C.A.Mead, " Operation ofTunnel-emission ", J.Appl.Phys., 32,6469 (1961) ".

The for example narration in " M.I.Elinson, Radio.Eng.Electron Phys., 10,1290 (1965) " of a known example of surface conductive electron emission device, other example is described below.

The utilization of surface conductive electron emission device is the parallel membrane plane that passes to of electric current, makes to cause in the small size film that forms on the substrate that electronics launches this phenomenon.Except above-mentioned SnO according to Elinson ₂Outside the film, the surface conductive electron emission device also comprises use gold thin film (G.Dittmer, " Thin Solid Films ", 9,317 (1972)), In ₂O ₃/ SnO ₂Film (M.Hartwell and C.G.Fonstad, " IEEE Trans.ED Conf ", 519 (1975)), and carbon film (Hisashi Araki, et al., " Vacuum ", Vol.26, No.1, p.22 (1983)) device, and other similar device.

As an exemplary of the structure of these surface conductive electron emission devices, Figure 25 is the plane graph according to people's such as M.Hartwell surface conductive ballistic device.With reference to Figure 25, label 3001 expression substrates; And the conductive film that forms by sputter by metal oxide of label 3004 expression.As shown in figure 25, this conductive film 3004 has H shape figure.Electron emission part 3005 is by conductive film 3004 being carried out an electrifying process (be called charged forming process, hereinafter will be described herein) and forming.With reference to Figure 25, spacing L is set at 0.5 to 1[mm], and width W is set at 0.1[mm].For convenience of description, this electron emission part 3005 is represented with rectangle in conductive film 3004 central authorities, yet this may not just represent the physical location and the shape of electron emission part.

In above surface conductive electron emission device according to people such as M.Hartwell, electron emission part 3005 before the electronics emission, forms by conductive film 3004 is carried out the electrifying process that is called charged forming process typically.According to this charged forming process; electrify is to apply with very slow speed by the two ends to conductive film 3004; for example the constant DC voltage of 1V/min increase is carried out; so that partial destruction or distortion conductive film 3004; or the characteristic of change conductive film 3004, have high-resistance electron emission part 3005 thereby form.Should be noted that the destruction or the crushed element of conductive film 3004, or characteristic changing partly has a crack.When after charged forming process, conductive film 3004 being applied appropriate voltage, near this crack, carry out the electronics emission.

Above surface conductive electron emission part has superiority, because in cold cathode device, they have simple structure, and can easily make.For this reason, can on broad area, form many devices.As the Japanese publication No.64-31332 that the applicant submitted to is disclosed, after deliberation a kind of method of arranging and driving many devices.

About the surface conductive electron emission device for example at imaging device, such as the application in image display device and the image recording structure, after deliberation electrically charged electron gun and other similar electron gun.

As a kind of application in image display device, especially as U.S. Patent No. 5 that the applicant submitted to, 066,833 and Japanese publication No.2-257551 and No.4-18137 disclosed like that, after deliberation a kind of image display device, it is used in combination a surface conductive electron emission device and a fluorophor luminous under electron beam irradiation.Such image display device expection has more excellent characteristic than other normal image display unit.For example, with recently popular liquid crystal indicator relatively, above-mentioned display unit is the light emission type at it, does not require back illumination, and has aspect the broad visual angle superior at it.

Except that above conventional device, the inventor has also checked according to different materials, the cold cathode device of manufacture method and structure.The inventor has also studied a kind of multiple electron beam source of wherein arranging many cold cathode devices, and a kind of image display device of using this multiple electron beam source.

The inventor has also checked a kind of multiple electron beam source according to wiring method shown in Figure 26.More precisely, as shown in figure 26, this multiple electron beam source is by arranging a large amount of cold cathode devices by bidimensional, and connects up these devices and constitute by matrix.

With reference to Figure 26, label 4001 expression cold cathode devices; Label 4002 expression row wiring layers; And label 4003 expression column wiring layers.Row wiring layer 4002 and column wiring layer 4003 be actual to have limited resistance, and they are expressed as cloth line resistance 4004 and 4005 in Figure 26.Wiring shown in Figure 26 is called the simple matrix wiring.For convenience of description, represented the multiple electron beam source that constitutes according to 6 * 6 matrixes among Figure 26.Yet matrix size is not limited to this layout certainly.At a kind of multiple electron beam source that is used for an imaging device, a plurality of devices of wishing that image shows that are enough to carry out of arranging and connect up.

Come in the multiple electron beam source of wiring list surface conduction electron ballistic device by simple matrix therein, row wiring layer 4002 and column wiring layer 4003 are supplied with the suitable signal of telecommunication, wish electron beam with output.When the surface conductive electron emission device of any row that will drive matrix, the row wiring layer 4002 of selecting row is applied one select voltage Vs.Simultaneously, the row wiring layer 4002 to non-selection row applies a non-selection voltage Vns.Synchronous with this operation, all column wiring layers 4003 are applied a driving voltage Ve who is used to export electron beam.According to the method, suppose and ignore by cloth line resistance 4004 and 4005 caused voltage drops, then the surface conductive electron emission device of selecting row has been applied a voltage (Ve-Vs), and the surface conductive electron emission device of non-selection row has been applied a voltage (Ve-Vns).As voltage Ve, when Vs and Vns are set at suitable level, have wish intensity electron beam just only from selecting the surface conductive electron emission device output of row.When each column wiring layer 4003 was applied different driving voltage Ve, the electron beam with varying strength was just from selecting each device output of row.Because the response speed of surface conductive electron emission device is very fast, thus the time limit of electron beam output also can change according to the time limit that applies driving voltage Ve.

Having by simple matrix comes the multiple electron beam source of calendar surface conduction electron ballistic device can be used in many application.For example, by suitably supplying with the signal of telecommunication according to image information, multiple electron beam source can be suitable as the electron source of an imaging device.

By to improving the broad research of surface conductive electron emission device characteristic, the inventor finds that the process of motivation in the manufacture process is very effective.

As mentioned above,, carry out a process (charged forming process), make electric current flow to conductive film when the electron emission part timesharing that will form the surface conductive electron emission device, so that make the film local failure, distortion or reduction quality, and form a crack.After this, when carrying out the process of motivation, electron emission characteristic can be greatly improved.More precisely, the process of motivation is one to be carried out formed electron emission part by charged forming process under proper condition and electrifies, so as around electron emission part the process of deposit carbon or carbon compound.For example, under vacuum environment, wherein have the organic substance of suitable partial pressure, and total pressure is 133 * 10 ^-4To 133 * 10 ^-5Pa periodically applies the predetermined voltage pulse.Use this process, any single crystal graphite, polycrystalline graphite, no spar China ink, and near the about 500[ of their mixture deposit electron emission part] or littler thickness.These conditions only are examples, and must make appropriate change according to the material and the shape of surface conductive electron emission device.

Use this process, with electron emission part before the process of motivation relatively, apply identical that emission current can the typical case increase by 100 times or bigger under the voltage.Therefore, in the multiple electron beam source of making the many surface conductive electron emission devices of same use, preferably each device is carried out the process of motivation.

After finishing the process of motivation, for the electron emission characteristic that makes the surface conductive electron emission device is stablized, reduce around the surface conductive electron emission device partial pressure of organic gas in the vacuum environment, even thereby when voltage puts on the surface conductive electron emission device, also anti-blocking or carbon compound are in electron emission part or the further deposit of its peripheral part, and this state must keep.Preferably, the partial pressure of organic gas is reduced to 133 * 10 in the environment ^-8Pa or littler, and keep this state.If possible, partial pressure preferably remains on 133 * 10 ^-10Pa or littler.The partial pressure that should be noted that organic gas is by in conjunction with being main component with carbon and hydrogen, and have with the mass spectrometer quantitative assay 13 to 200 mass numbers organic molecule partial pressure and obtain,

A kind of typical method that reduces the partial pressure of organic gas around the surface conductive electron emission device is as follows.Heating comprises the vacuum tank of substrate, has formed the surface conductive electron emission device on the substrate.In making the organic gas molecule surface of each several part emit from container, use an oilless vacuum pump, for example sorption pump or ionic pump are carried out and are vacuumized.After the partial pressure that reduces organic gas like this, vacuumize by continuing to use oilless vacuum pump to carry out, can keep this state.Yet the method that this use vacuum pump continues to vacuumize is according to application purpose, with regard to volume, and power consumption, weight and expense have unfavorable aspect.When the surface conductive electron emission device will be applied to image display device, fully absorb organic gas molecule, so that reduce the partial pressure of organic gas, and after this in vacuum tank, form a breathing film, simultaneously, and the sealing blast pipe, thus keep this state.

Use this process, after the process of motivation along with the process of time, both carbon-free do not have yet carbon compound can because electrify or the surface conductive electron emission device in change and deposit again, therefore can make electron emission characteristic stable.

As mentioned above, taked the characteristic of measure with improvement and surface of stability conduction electron ballistic device, yet, use the multiple electron beam source of surface conductive electron emission device to have following problem.

In some cases, as shown in Figure 3, the peak value that drives the voltage that multiple electron beam source applied is owing to temperature characterisitic (for example temperature drift) causes increase, or owing to interference (for example noise of circuit or static) causes instantaneous increase.When this increase in the magnitude of voltage made the peak value of driving voltage increase above predetermined value (putting on the maximum of the magnitude of voltage of multiple electron beam source in advance), the device property of surface conductive electron emission device changed after voltage puts on multiple electron beam source at once.For this reason, even when applying the voltage identical with the voltage that is applied before the characteristic of the surface conductive electron emission device of multiple electron beam source changes, electron emission amount also changes (reducing).When multiple electron beam source is applied to image display device, reduce in the brightness of the row that drives the operating period display image, for example cause that brightness changes in the line direction of display image.

The present invention forms considering under the above-mentioned regular situation, and its objective is and provide a kind of electron generating that is subjected to the driving voltage variable effect hardly, a kind of imaging device that uses this electron generating, and a kind of method of making these devices.

To achieve these goals, the invention provides a kind of electron generating, comprise: a plurality of surface conductive electron emission devices, press matrix arrangement on a substrate, it is characterized in that, after the electron emission part of each in a plurality of surface conductive electron emission devices all forms, described a plurality of surface conductive electron emission devices are applied a potential pulse, and its value is bigger with the pairing magnitude of voltage of noise voltage sum that may enter described surface conductive electron emission device than the maximum of normal drive voltage.

Preferably, the surface conductive electron emission device is arranged in the vacuum tank, and wherein the partial pressure of organic gas is not more than 133 * 10 ^-8Pa.

Preferably, a plurality of surface conductive electron emission devices are arranged by two dimension by matrix with the column wiring layer by the row wiring layer and are connected.

Preferably, the value of pulse voltage is peaked 1.05 to 1.5 times of driving voltage.

Preferably, a plurality of surface conductive electron emission devices are arranged by two dimension, and device also comprises gate electrode, are used for regulating from surface conductive electron emission device institute electrons emitted bundle quantity.

The present invention also comprises a kind of imaging device, and it comprises above electron generating and an excitation and a luminous fluorophor under electron beam irradiation.

The present invention also comprises a kind of method of making electron generating, this electron generating has: a multiple electron beam source, wherein arrange a plurality of surface conductive electron emission devices, and drive unit, be used for described multiple electron beam source being applied a driving voltage according to input image signal, after this method comprises the steps: that each the electron emission part in a plurality of surface conductive electron emission devices all forms, apply a characteristic deviation voltage, its value is bigger with the pairing magnitude of voltage of noise voltage sum that may enter described surface conductive electron emission device than the maximum of driving voltage.Preferably, the partial pressure of organic gas is no more than 133 * 10 therein ^-8Apply characteristic deviation voltage in the environment of pa.Preferably, characteristic deviation voltage is peaked 1.05 to 1.5 times of driving voltage.

The EB (electron beam) that electron generating of the present invention can be used for semiconductor fabrication draws.

According to the present invention, can provide a kind of electron generating that is subjected to the driving voltage variable effect hardly, a kind of imaging device that uses this electron generating, and a kind of method of making these devices.

Other characteristics of the present invention and advantage will be apparent from the following narration of doing together with accompanying drawing, wherein run through accompanying drawing, and same label is represented identical or similar portions.

Figure 1A and Figure 1B are employed voltage waveforms during expression is measured, and according to the curve chart of the photoelectric characteristic offset of surface conductive electron emission device of the present invention;

Fig. 2 A and Fig. 2 B are the curve charts that is used to illustrate the memory function of surface conductive electron emission device of the present invention;

Fig. 3 is used to illustrate the problem to be solved in the present invention, i.e. the oscillogram of the caused driving voltage distortion of noise or temperature characterisitic;

Fig. 4 is the phantom of expression according to the display panel of the image display device of first embodiment;

Fig. 5 A and Fig. 5 B are the plane graphs of the layout of fluorophor on the panel of display panel of expression first embodiment;

Fig. 6 A and Fig. 6 B are the plane graph and the sectional drawings of the employed planar surface conduction electron of first embodiment ballistic device;

Fig. 7 A is the sectional drawing that is illustrated in step in the planar surface conduction electron ballistic device of making first embodiment to Fig. 7 E;

Fig. 8 is illustrated in the curve chart that applies the waveform of voltage in the charged forming process of first embodiment;

Fig. 9 A and Fig. 9 B are illustrated respectively in the first embodiment process of motivation, apply the curve chart that voltage waveform and emission current Ie change;

Figure 10 is the sectional drawing of the employed step type of first embodiment surface conductive electron emission device;

Figure 11 A is the sectional drawing that step in the step type surface conductive electron emission device is made in expression to Figure 11 F;

Figure 12 is the plane graph of the substrate of the employed multiple electron beam source of first embodiment;

Figure 13 is the part sectional drawing of the substrate of the employed multiple electron beam source of first embodiment;

Figure 14 is that expression is used to make the calcspar that has the circuit arrangement of memory function according to the multiple electron beam source of first embodiment;

Figure 15 is the curve chart that is used to realize the voltage waveform of the employed memory function of first embodiment;

Figure 16 is the calcspar of the layout of the expression TV signal display circuit that uses the first embodiment display panel;

Figure 17 is the plane graph of layout one example of electron emission device of the multiple electron beam source of expression first embodiment;

Figure 18 is used for illustrating the view of first embodiment with demonstration one example of behavior unit;

Figure 19 is the view of a specific example of the display format of expression circuit shown in Figure 17;

Figure 20 is the time diagram of the timing example of expression demonstration shown in Figure 19;

Figure 21 is the time diagram of timing example of the demonstration of expression first embodiment;

Figure 22 is the phantom of expression according to the display panel of second embodiment of the invention;

Figure 23 be among expression second embodiment on the fluorophor surface grid apply the curve chart that concerns between voltage and the current value;

Figure 24 is to use the calcspar of the multifunctional image display unit of image display device of the present invention;

Figure 25 is the plane graph of conventional surface conductive electron emission device one example of expression; And

Figure 26 is the view that is used to illustrate the general matrix wiring of electron emission device.

At first will narrate the electron emission characteristic memory function that is presented by the surface conductive electron emission device.

The inventor once drove a surface conductive electron emission device that has stood the charged forming process (energization forming process) and the process of motivation (activationprocess) in the environment that has reduced the organic gas partial pressure, and had measured its electrical characteristics.

Figure 1A and Figure 1B are the curve charts of voltage waveform that expression puts on the drive signal of this surface conductive electron emission device.Abscissa express time axle; And ordinate represents to put on the voltage (device voltage Vf hereinafter referred to as) of surface conductive electron emission device.

Shown in Figure 1A, use continuous square voltage pulse as drive signal, and be divided into three periods, i.e. first to the 3rd period period that applies of potential pulse.In day part, apply 100 identical pulse.Figure 1B is the zoomed-in view of the waveform of such pulse shown in Figure 1A.

Measuring condition is: pulse width T 1=66.8[μ sec in the day part], and pulse period T2=16.7[msec].These conditions are to determine with reference to the standard drive condition that sets when the surface conductive electron emission device is applied to ordinary television receiver.Yet, can under other condition, measure memory function.Should note, measurement is fully reduced to the impedance of the routing path of each surface conductive electron emission device when source driving signal, so as to make the potential pulse that effectively puts on the surface conductive electron emission device rise time Tr and fall time Tf all become be equal to or less than 100[ns] time carries out.

During the first and the 3rd period, device voltage Vf is Vf=Vf1, and during second period, Vf=Vf2.Two device voltage Vf1 and Vf2 are set at the electronics emission threshold voltage greater than each surface conductive electron emission device, and satisfy Vf1＜Vf2.Because electronics emission threshold voltage changes with the shape and the material of surface conductive electron emission device, so these voltages are suitably set according to surface conductive electron emission device to be measured.About the environment around the surface conductive electron emission device in the measuring operation, total pressure is 133 * 10 ^-6Pa, and the partial pressure of organic gas is 133 * 10 ^-9Pa.

Fig. 2 A and Fig. 2 B are illustrated in to apply shown in Figure 1A and Figure 1B under the drive signal curve chart of the electrical characteristics of surface conductive electron emission device.With reference to figure 2A, abscissa is represented device voltage Vf; And ordinate is represented from the measured value of the electric current (emission current Ie hereinafter referred to as) of surface conductive electron emission device emission.With reference to figure 2B, abscissa is represented device voltage Vf; And the measured value of the electric current that flows through in the ordinate presentation surface conduction electron ballistic device (device current If hereinafter referred to as).

At first will narrate device voltage Vf shown in Fig. 2 A to the characteristic of emission current Ie.

During first period shown in Figure 1A, surface conductive electron emission device response driving pulse is according to characteristic curve Iec (1) output emission current.In the rise time of driving pulse Tr, when applying voltage Vf above Vth1, emission current Ie sharply increases according to characteristic curve Iec (1).At Vf=Vf1, i.e. during 1 period of pulse width T, emission current Ie remains on Ie1.In the fall time of driving pulse Tf, emission current sharply reduces according to characteristic curve Iec (1).

During second period, when begin to apply by Vf=Vf2 during given pulse, characteristic curve Iec (1) becomes characteristic curve Iec (2).More precisely, in the rise time of driving pulse Tr, when applying voltage Vf above Vth2, emission current Ie sharply increases according to characteristic curve Iec (2).At Vf=Vf2, promptly during the period T1, emission current Ie remains on Ie2.In the fall time of driving pulse Tf, emission current Ie sharply reduces according to characteristic curve Iec (2).

During the 3rd period, though apply once more by Vf=Vf1 given pulse, emission current Ie changes according to characteristic curve Iec (2).More precisely, in the rise time of driving pulse Tr, when applying voltage Vf above Vth2, emission current Ie sharply increases according to characteristic curve Iec (2).At Vf=Vf1, promptly during the period T1, emission current Ie remains on Ie3.In the fall time of driving pulse Tf, emission current Ie sharply reduces according to characteristic curve Iec (2).

As mentioned above, during the 3rd period,,, and become than little during first period so to device voltage Vf=Vf1, emission current Ie is reduced to Ie3 from Ie1 owing to stored characteristic curve Iec (2) during second period.

About the characteristic of device voltage Vf to device current If, shown in Fig. 2 B, device is operated according to characteristic curve Ifc (1) during first period equally.Yet during second period, device is operated according to characteristic curve Ifc (2).During the 3rd period, characteristic curve Ifc (2) operation that device is stored during according to second period.

In order to narrate conveniently, only set three periods, i.e. first to the 3rd period.Yet as obviously like that visible, setting is not limited to this condition.When the surface conductive electron emission device with memory function is applied pulse voltage, when applying magnitude of voltage than the big pulse of the magnitude of voltage that applies pulse in advance, characteristic curve skew, and the characteristic curve that produces of storage.Thereafter, characteristic curve (electron emission characteristic) continue to be preserved, unless apply till the pulse with bigger magnitude of voltage.This memory function is not also found in other ballistic device that comprises FE type electron emission device.Therefore this specific character is that the surface conductive electron emission device is exclusive.

In the present embodiment, all surface conduction electron ballistic device to multiple electron beam source applies a storage voltage Vmn (Vmn=Vdr+AV+Vsf) in advance, this storage voltage Vmn adds voltage AV and margin of safety Vsf and obtains on the peak value Vdr of desirable driving voltage, voltage △ V and margin of safety Vsf estimate that the device property of all surface conduction electron ballistic device obtains skew and stores like this owing to disturb or the maximum recruitment of the peak value of the caused driving voltage of temperature characterisitic.

Vsf is set at appropriate value when margin of safety, so that caused by interference or temperature characterisitic, when the peak value of actual driving voltage does not increase above storage voltage Vmn, because the storage characteristics of surface conductive electron emission device makes the electron emission characteristic non-migration.Just, when multiple electron beam source is applied to an image display device, do not reduce, or the brightness of display image changes and can be eliminated in the brightness that drives the operating period display image.The preferable range of storage voltage Vmn approximately is peaked 1.05 to 1.5 times of driving voltage.

Be described in detail the preferred embodiments of the present invention below with reference to accompanying drawing.

Below with reference to layout and the manufacture method of a specific example narration according to the display panel of the image display device of the first embodiment of the present invention.

Fig. 4 is the phantom of the employed display panel of first embodiment, the internal structure of its display plate.

With reference to figure 4, label 1005 expression back plates; Label 1006 expression sidewalls; And label 1007 expression panels.1005 to 1007 these parts form a gas-tight container that is used for keeping at display panel 1000 vacuum.In order to construct this gas-tight container, the various piece that need be tightly connected is so that their bonding part keeps sufficient intensity and air tight condition.For example, to engaging the certain applications sintered glass, and in air or nitrogen in 400 ℃ to 500 ℃ following sintering 10 minutes or longer time, thereby be tightly connected these parts.A kind of method of this gas-tight container of finding time will be described below.

Back plate 1005 has a substrate 1001 to fix on it, forms N * M surface conductive electron emission device on this substrate 1001.M and N equal 2 or greater than 2 positive integer, and suitably set according to the number of targets of display pixel.For example, be used for the display unit that high definition TV shows at one, N=3 preferably, 000 or bigger, and M=1,000 or bigger.In the present embodiment, N=3,071, and M=1,024.N * M surface conductive electron emission device arranged with M row wiring layer 1003 and N column wiring layer 1004 by simple matrix.The part that will be constituted substrate 1001, a plurality of electron emission devices, row wiring layer 1003, and column wiring layer 1004 is called a multiple electron beam source.The manufacture method of this multiple electron beam source and structure will be described in detail later.

In the present embodiment, the substrate 1001 of multiple electron beam source is fixed on the back plate 1005 of gas-tight container.Yet if the substrate of this multiple electron beam source 1001 has sufficient intensity, the substrate 1001 of multiple electron beam source self can be as the back plate of gas-tight container.

In addition, on the lower surface of panel 1007, form a fluorescent film 1008.Because the display panel 1000 of present embodiment is colored display panel, so fluorescent film 1008 scribbles red (R), green (G) and blue (B) fluorophor, three kinds of primary colors fluorophor that promptly in the CRT field, use.Shown in Fig. 5 A, R, G and B fluorophor press bar and arrange application.Black conducting materials 1010 is set between the fluorophor bar.Even the purpose of black conducting materials 1010 is set is for when the generation of electron beam irradiation position is offset to a certain degree, prevent that also Show Color is inharmonious, for by covering the reduction that outside reflection of light prevents to show contrast, in order to prevent by 1008 chargings of the caused fluorescent film of electron beam, and for other similar purpose.Black conducting materials 1010 mainly is made up of graphite, yet, as long as can realize above-mentioned purpose, can use any other material.

Three kinds of primary colors, i.e. R, the layout of the fluorophor of G and B is not limited to bar shaped shown in Fig. 5 A and arranges.For example, can use the △ shown in Fig. 5 B to arrange or other layout.

In the time that monochromatic display panel will be formed, must use monochromatic fluorescent material to fluorescent film 1008.In this case, always do not need to use black conducting materials 1010.In addition, on the back plate side of fluorescent film 1008, a kind of metal backing 1009 known in the CRT field is set.The purpose that metal backing 1009 is set is partly to improve light utilization efficiency in order to utilize from the mirroring of the light of fluorescent film 1008 emission, in order to prevent that fluorescent film 1008 and anion from bumping against, for metal backing 1009 is used as the electrode that applies a beam voltage, for metal backing 1009 conductive path as the electronics of activating fluorescent film 1008, and for other similar purpose.Metal backing 1009 is by form fluorescent film 1008 on panel 1007, to fluorescent film surface applications trowel photoreduction process, and by vacuum deposition thereon deposit aluminium (Al) form.Should be noted that when fluorescent film 1008 being used a kind of low-voltage fluorescent material, do not use metal backing 1009.

In addition, in order to apply an accelerating voltage or to improve the conductance of fluorescent film, can between panel 1007 and fluorescent film 1008, install the transparency electrode of for example making by ITO (tin indium oxide).

With reference to figure 4, label Dx1 is to DxM, and Dy1 is to DyN, and Hv represents to be used for the electric connecting terminal of airtight construction, and they are set is for display panel 1000 is electrically connected with a circuit (hereinafter narration).End Dx1 is electrically connected to the row wiring layer 1003 of substrate 1001 to DxM; End Dy1 is electrically connected to the column wiring layer 1004 of substrate 1001 to DyN; And end Hv is electrically connected to the metal backing 1009 of panel 1007.

For the gas-tight container of finding time, after forming gas-tight container, connect a blast pipe and an oilless vacuum pump (both is not shown), and gas-tight container is evacuated to is approximately 10 ^-7The vacuum of [Torr].In keeping finding time, display panel 1000 is heated to 80 ℃ to 200C, and cured about 5 hours, to reduce the partial pressure of organic gas.After this, sealing blast pipe.In order in gas-tight container, to keep vacuum, before sealing/afterwards at once in gas-tight container the precalculated position form a breathing film (not shown).This breathing film is by heating or RF heating, makes a kind of gettering material heating of for example mainly being made up of Ba and evaporates and the film that forms.The getter action of breathing film is to keep in the gas-tight container 133 * 10 ^-5To 133 * 10 ^-7The vacuum of pa.In this example, mainly form and partial pressure with organic gas of 13 to 200 mass numbers is set at less than 133 * 10 by carbon and hydrogen ^-8Pa.

Basic layout and manufacture method have more than been narrated according to the display panel 1000 of first embodiment.

Secondly will narrate a kind of method of making employed multiple electron beam source in the present embodiment display panel 1000.For employed multiple electron beam source in the present embodiment image display device, can use any material, the surface conductive electron emission device of shape and manufacture method is as long as it is to be used for a multiple electron beam source that comes calendar surface conduction electron ballistic device by simple matrix.Yet the inventor finds, in the surface conductive electron emission device, a kind of surface conductive electron emission device of being made of an electron emission part or its peripheral part the particulate film is good aspect the electron emission characteristic, and can make easily.Therefore, this device is suitable for high brightness most, the employed surface conductive electron emission device of large-screen image display unit.In the display panel of present embodiment, used the surface conductive electron emission device that respectively has the particulate film to constitute an electron emission part or its peripheral part.At first, basic structure that will narration preferred surface conduction electron ballistic device, manufacture method and characteristic will be narrated afterwards by the connect up structure of multiple electron beam source of many devices of simple matrix.

The typical structure that is made of the surface conductive electron emission device of an electron emission part or its peripheral part the particulate film comprises a kind of planarized structure and a kind of step type structure.

At first will narrate the structure and the manufacture method of planar surface conduction electron ballistic device.Fig. 6 A and Fig. 6 B are plane graph and the sectional drawings that is used for the structure of illustrated planar type surface conductive electron emission device.

With reference to figure 6A and Fig. 6 B, label 1101 expression substrates;

Label

1102 and 1103 expression device electrodes; Label 1104 expression conductive films; The electron emission part that label 1105 expressions are formed by charged forming process; And the film that forms by the process of motivation of label 1113 expression.As for substrate 1101, can use various glass substrate, for example silex glass and soda-lime glass substrate, various ceramic substrate, for example alum clay substrate, or any substrate with insulating barrier is for example by SiO ₂The substrate of the insulating barrier of forming and forming

thereon.Device electrode

1102 and 1103 is made by electric conducting material, and they form with its parallel and mutual subtend in surface on substrate 1101.For example, can select and use a kind of in the following material: various metals, routine Ni, Cr, Au, Mo, W, Pt, Ti, Cu, Pd and Ag, the various alloys of these materials, various metal oxides, for example In ₂O ₃-SnO ₂, and various semiconductor, for example polysilicon.By being combined into membrane technology, for example vacuum deposition, and figure forms technology, and for example photolithography or etching can form

device electrode

1102 and 1103 easily, yet, can use any other method (for example art of printing).

Device electrode

1102 and 1103 shape suitably design according to the application purpose of electron emission device.Usually, electrode spacing L is designed to hundreds of to the interior appropriate value of hundreds of mu m range.The preferable range that is used for display unit is that a few μ m are to tens μ m.As for the thickness d of device electrode, select an appropriate value in usually from hundreds of to several mu m ranges.

Conductive film 1104 is made by the particulate film." particulate film " is a kind of many particulates film of (comprising the island gathering) that comprises.Microscopic examination particulate film will represent in the film single particulate for being separated from each other, and will be contiguous, or overlapped mutually.

Particle has the diameter of several within several thousand scopes in the particulate film.Preferably, diameter is limited to 10 within the 200 scopes.The thickness of particulate film is being considered suitably setting under the following condition:

device electrode

1102 or 1103 is electrically connected necessary condition, the necessary condition of charged forming process that hereinafter will be described herein is set at the resistance of particulate film self hereinafter with the necessary condition of the appropriate value that is described herein.More precisely, in several thousand scopes, preferably, 10 are to 500 at several for the thickness setting of film.

For example, the material that is used to form the particulate film is various metals, Pd for example, At, Ru, Ag, Au, Ti, In, Cu, Cr, Fe, Zn, Sn, Ta, W and Pb, various oxides, PdO for example, SnO ₂, In ₂O ₃, PbO and Sb ₂O ₃, various borides, for example HfB ₂, ZrB ₂, LaB ₆, CeB ₆, YB ₄And GdB ₄, various carbide, TiC for example, ZrC, HfC, TaC, SiC and WC, various nitride, TiN for example, ZrN, HfN, various semiconductors, for example Si and Ge, and various carbon.From these materials, select a kind of suitable material.

As mentioned above, conductive film 1104 is to use the particulate film and forms, and the superficial layer resistance of this film is set in 10 ³To 10 ⁷Within [Ω/sq] scope.

Because preferably conductive film 1104 is electrically connected with

device electrode

1102 and 1103, overlaps so they are arranged to mutually.With reference to figure 6A and Fig. 6 B, begin stacked in the following order various piece from the bottom: substrate, device electrode and conductive film.This overlapping order begins from the bottom: substrate, conductive film and device electrode.

Electron emission part 1105 is crack parts that form at conductive film 1104 part places.This electron emission part 1105 resistance ratios periphery conductive film resistance height.This crack part is to form by conductive film 1104 is carried out charged forming process (hereinafter will be described herein).In some cases, within the part of crack, arrange to have the particle of several to hundreds of diameter.Owing to be difficult to accurately illustrate the physical location and the shape of electron emission part, so Fig. 6 A and Fig. 6 B schematically illustrate the crack part.

Film 1113 is made up of carbon or carbon compound, its overlay electronic radiating portion 1105 and peripheral part thereof.Film 1113 is by hereinafter the process of motivation that is described herein being formed after charged forming process.Film 1113 is preferably by single crystal graphite, and polycrystalline graphite does not have brilliant carbon, or their mixture makes, and its thickness is 500[] or littler, more particularly, be 300[] or littler.Owing to be difficult to accurately illustrate the physical location and the shape of film 1113, so Fig. 6 A and Fig. 6 B schematically illustrate film.Fig. 6 A is a plane graph of representing wherein to remove the device of film 1113 parts.

More than narrated the preferred basic structure of device.In the present embodiment, in fact use following device.

Substrate 1101 is made up of soda-lime glass, and

device electrode

1102 and 1103 is made up of the Ni film.The thickness d of device electrode is 1,000[], and spacing L is 2[μ m].Use Pd or PdO as the main material that is used for the particulate film.The thickness of particulate film and width W are set at 100[ respectively] and 100[μ m].

Secondly will narrate a kind of method for optimizing of making planar surface conduction electron ballistic device.Fig. 7 A is to be used for illustrating the sectional drawing of making planar surface conduction electron ballistic device step to Fig. 7 E.The label identical with Fig. 6 B with Fig. 6 A represented same part at Fig. 7 A in Fig. 7 E, and will omit being described in detail of they.

(1) at first, shown in Fig. 7 A, on substrate 1101, form device electrode 1102 and 1103.Forming device electrode 1102 and at 1103 o'clock, use remover, pure water and organic solvent thoroughly purify substrate 1101, and on substrate 1101 a kind of material that is used for device electrode of deposit.As for deposition process, can use the vacuum film formation technology, for example vapour deposition or sputter.After this, the material of deposit is made figure with the lithoprinting etching.Like this, the device electrode among formation Fig. 7 A is to (1102 and 1103).

(2) secondly, shown in Fig. 7 B, form conductive film 1104.

When forming conductive film, at first ready substrate 1101 among Fig. 7 A is applied organic metallic solution, make the dry and sintering of the solution that is applied then, thereby form the particulate film.After this, by the lithoprinting engraving method, make the particulate film become the reservation shape figure.Organic metal solution means a kind of organo-metallic compound solution, and it comprises a kind of atomic material that is used for, as the main component of conductive film.In the present embodiment, Pd is as main component.In the present embodiment, carry out applying of organic metal solution by infusion process, yet, spin-coating method or spraying process can be used.

As a kind of method that forms by the made conductive film of particulate film, employedly in the present embodiment apply organic metallic solution and can use any other method, vacuum deposition method for example, sputtering method or chemical vapor deposition method substitute.

(3) shown in Fig. 7 C, between the 1110 pairs of device electrodes 1102 of power supply and 1103 that are used for charged forming process, apply an appropriate voltage, and carry out charged forming process, to form electron emission part 1105.

Here charged forming process is one to be carried out the conductive film that is made of the particulate film 1104 and to electrify, so that a conductive film part suitably destroyed, and distortion or reduce quality, thus film is become the process that is suitable for electron emission structure.In the conductive film that the particulate film is constituted, becoming the part that is suitable for electron emission structure (being electron emission part 1105) has a suitable crack in film.The film before film with electron emission part 1105 and the charged forming process relatively, the resistance between the

device electrode

1102 and 1103 increases greatly.

Fig. 8 represents to be used for an example of the waveform of the appropriate voltage that the power supply 1110 of charged forming process applied, and is used for playing a method for electrically and will being described in detail with reference to figure 8 of charged forming process.In the charged forming process of the conductive film that the particulate film is constituted, preferably use a pulse-shaped voltage.As shown in Figure 8, in the present embodiment, apply triangular pulse continuously with pulse spacing T4 with pulse width T 3.In this example, the peak value Vpf of triangular pulse increases in order.In addition, insert a watchdog pulse Pm with appropriate intervals between triangular pulse, monitoring the formation state of electron emission part 1105, and the electric current of circulation is measured by an ampere meter 1111 when inserting.

In the present embodiment, 133 * 10 ^-5Under the Pa vacuum environment, pulse width T 3 is set at 1[msec]; And pulse spacing T4 is set at 10[msec].Peak value Vpf is by each pulse 0.1[V] increase.Whenever apply 5 triangular pulses, insert a watchdog pulse Pm.For fear of the adverse effect to charged forming process, the voltage Vpm of watchdog pulse is set at 0.1[V].Resistance between

device electrode

1102 and 1103 becomes 1 * 10 ⁶When [Ω], promptly the electric current of being measured by ampere meter 1111 when applying this watchdog pulse becomes 1 * 10 ^-7[A] or more hour stops being used for electrifying of charged forming process.

Should be noted that above method be for the surface conductive electron emission device of present embodiment institute preferred.Changing the design of relevant surface conductive electron emission device, for example material of particulate film or thickness, or under the spacing L situation between the device electrode, the condition that is used to electrify preferably changes with the change of designs.

(4) shown in Fig. 7 D, secondly between 1112 pairs of device electrodes 1102 of excitation power supply and 1103, apply an appropriate voltage, and carry out the process of motivation to improve electron emission characteristic.

Here the process of motivation is the formed electron emission part of charged forming process 1105 to be carried out to electrify under proper condition, so as around electron emission part 1105 process of deposit carbon or carbon compound.Fig. 7 D is with the deposition materials of material 1113 expression carbon or carbon compound.Before electron emission part 1105 and its process of motivation relatively, can increase about 100 times or bigger applying under the voltage emission current typical case equally.

The process of motivation is by 133 * 10 ^-4To 133 * 10 ^-5Periodically apply a potential pulse in the Pa vacuum environment, so that resulting carbon of the organic compound that deposit exists or carbon compound are carried out from vacuum environment.Deposition materials 1113 is single crystal graphites, polycrystalline graphite, in no spar China ink and their mixture any one.The thickness of deposition materials 1113 is 500[] or littler, preferably, and 300[] or littler.

In order to have illustrated in greater detail method for electrically, Fig. 9 A represents an example of the waveform of the appropriate voltage that excitation power supply 1112 is applied.In the present embodiment, the process of motivation is to carry out by periodically applying a constant rectangular voltage.More precisely, the Vac of rectangular voltage shown in is set at 14[V]; Pulse width T 5 is set at 1[msec]; And pulse spacing T6 is set at 10[msec].Should be noted that the above condition of electrifying is that to make the surface conductive electron emission device institute of present embodiment preferred.When the design of surface conductive electron emission device changed, these conditions preferably changed with the variation of designs.

With reference to figure 7D, label 1114 expression anode electrodes are connected to DC high-voltage power supply 1115 and ampere meter 1116, to catch from the emission current Ie of surface conductive electron emission device emission.Should be noted that when substrate 1101 was included in the display panel 1000 fluorescent surface of display panel 1000 is as anode electrode 1114 before the process of motivation.When applying from excitation power supply 1112 in the voltage, ampere meter 1116 is measured emission current Ie, to monitor the progress of the process of motivation, so that the operation of control excitation power supply 1112.Fig. 9 B represents the example of the emission current Ie that ampere meter 1116 is measured.Beginning when excitation power supply 1112 applies pulse voltage, emission current Ie in time through and increase, reach capacity gradually, and seldom increase then.In the basic saturation point of emission current Ie, stop to apply voltage, and stop the process of motivation then from excitation power supply 1112.

Should be noted that the above condition that electrifies is preferred for the surface conductive electron emission device institute that makes present embodiment.When the design of surface conductive electron emission device changed, these conditions preferably changed with the variation of designs.

Planar surface conduction electron ballistic device shown in Fig. 7 E is pressed with the upper type manufacturing.

Below will narrate another kind of typical surface conductive electron emission device, i.e. step type surface conductive electron emission device, it has the electron emission part or its peripheral part that are formed by particulate.

Figure 10 is the sectional drawing of basic layout that is used to illustrate the step type surface conductive electron emission device of present embodiment.With reference to Figure 10, label 1201 expression substrates;

Label

1202 and 1203 expression device electrodes; Label 1206 expression steps form parts; The conductive film of particulate film is used in label 1204 expressions; Label 1205 expressions are by the formed electron emission part of charged forming process; And label 1213 expressions are by the formed film of the process of motivation.This step type device is different with above-mentioned planar surface conduction electron ballistic device, and promptly a device electrode 1202 is to form on the parts 1206 at step to form, and conductive film 1204 covers the side that step forms parts 1206.Therefore, the device electrode spacing L of the ballistic device of planar surface conduction electron shown in Fig. 6 A is corresponding with the step height Ls that the step of step type device forms parts 1206.For substrate 1201,

device electrode

1202 and 1203, and the conductive film 1204 that uses the particulate film can use material identical materials cited when narration planar surface conduction electron ballistic device.Form parts 1206 for step, use a kind of electrical insulating material, for example SiO ₂

Below will narrate a kind of method of making step type surface conductive electron emission device.Figure 11 A is to be used to illustrate the sectional drawing of making step type surface conductive electron emission device step to 11F.The label identical with Figure 10 be at Figure 11 A same parts of expression in the 11F, and will omit it and be described in detail.

(1) shown in Figure 11 A, on substrate 1201, forms device electrode 1203.

(2) shown in Figure 11 B, the stacked insulating barrier that is used to form step formation parts on resultant structure.For insulating barrier, for example form SiO by sputter ₂Layer.Yet, can use other film build method, for example vacuum deposition or printing.

(3) shown in Figure 11 C, on resultant insulating barrier, form device electrode 1202.

(4) shown in Figure 11 D, for example by being etched away partial insulative layer, to expose device electrode 1203.

(5) shown in Figure 11 E, form the conductive film 1204 that uses the particulate film.In order to form conductive film 1204, can use a kind of and the identical film build method of planar surface conduction electron ballistic device, for example coating.

(6) as planar surface conduction electron ballistic device, carry out charged forming process, to form an electron emission part (carrying out the identical charged forming process of charged forming process) with the planar surface conduction electron ballistic device that has been described herein with reference to figure 7C.

(7) as planar surface conduction electron ballistic device, carry out the process of motivation, with deposit carbon or carbon compound near electron emission part (carrying out the identical process of motivation of the process of motivation) with the planar surface conduction electron ballistic device that has been described herein with reference to figure 7D.

In a manner described, the step type surface conductive electron emission device shown in the shop drawings 11F.

Below will narrate a kind of structure of multiple electron beam source, wherein above-mentioned surface conductive electron emission device is arranged on the substrate and by simple matrix and connects up.

Figure 12 is the plane graph of employed multiple electron beam source in the expression display panel 1000 shown in Figure 4.Arrange a plurality of surface conductive electron emission devices on substrate 1001, they respectively have Fig. 6 A and identical structure shown in Fig. 6 B.These devices are pressed the simple matrix wiring by row wiring layer 1003 and column wiring layer 1004.The be expert at confluce of wiring layer 1003 and column wiring layer 1004 forms the insulating barrier (not shown), so that keep electric insulation between wiring layer.

Figure 13 is the sectional drawing of being got along Figure 12 cathetus A-A '.

Multiple electron beam source with above structure is made in the following manner.On substrate 1001, form row wiring layer 1003, column wiring layer 1004, insulating barrier (not shown) between electrode, and the device electrode of surface conductive electron emission device and conductive film in advance.After this, provide power supply to each device,, thereby make this multiple electron beam source so that carry out the charged forming process and the process of motivation by row wiring layer 1003 and column wiring layer 1004.

Below will narrate the process of the electron emission characteristic that changes the surface conductive electron emission device, this is a feature of present embodiment.In the present embodiment, use the memory function of above-mentioned surface conductive electron emission device, the function that promptly is offset electron emission characteristic changes the device property of the surface conductive electron emission device that is obtained by above manufacture method.Use circuit shown in Figure 14 to apply storage voltage or characteristic deviation voltage.

With reference to Figure 14, label 301 expression direct voltage sources; Label 302 expression control circuits, its output time signal Sc is used for the row wiring layer that order is changed multiple electron beam source 300; And label 304 expression field-effect transistors.The time signal Sc of control circuit 302 outputs makes field-effect transistor 304 on/off that are connected to direct voltage source 301, makes the storage voltage that is applied in the capable unit of multiple electron beam source 300 be applied to each device by the row wiring layer.Control circuit 302 for example has a clock generator and a single-shot multivibrator, and produces pulse duration and the periodic waveform that is used to apply storage voltage.When applying storage voltage, fully carry out the ageing direct voltage source, with actual when using circuit shown in Figure 14 to prevent change in voltage on the row wiring layer.In addition, wiring layer is done shortly as far as possible, to prevent to comprise noise.In the present embodiment, all column wiring layer ground connection.

The circuit that is used to apply storage voltage is not limited to circuit shown in Figure 14.Hereinafter with the display driver circuit that is described herein, can produce an appropriate voltage by above-mentioned exciting bank or one.

Figure 15 is the figure of the waveform of employed storage voltage in the expression present embodiment.

With reference to Figure 15, the peak value Vme of storage voltage is 15[V].This value is having estimated to be caused in drive circuit by the temperature characterisitic of noise or drive circuit in the increment, according to 14[V] driving voltage determine.The pulse width T m of storage voltage is 66.8[μ s], and pulse period Ts is 16.6[ms].A device is applied 100 pulses.These conditions are to determine with reference to the drive condition of general television set.Yet, even also can offset characteristic under other condition.

Like this, his-and-hers watches surface conduction electron ballistic device applies storage voltage in advance, and changes (skew) and memory device characteristic.Use this process, device property does not change again in driving operation.Therefore, be different from the existing multiple electron beam source that is used for display unit, can prevent that the brightness of display screen from reducing, and can eliminate the brightness variation of display screen.

In vacuum environment, carry out and apply storage voltage or characteristic deviation voltage.Preferably, the partial pressure of organic gas is 133 * 10 in the vacuum environment ^-8Pa or littler.In many cases, the organic gas that stays in the vacuum originates from vacuum pumping hardware, the oil vapour that uses in rotary pump or the oil diffusion pump for example, or originate from the remnants of the organic solvent that uses in the surface conductive electron emission device manufacture process.The example of organic gas has chain hydrocarbon, alkane for example, alkene and alkynes, aromatic hydrocarbon, alcohol, aldehyde, ketone, amine, phenol, organic acid, for example carboxylic acid and sulfonic acid, or the derivative of above-mentioned organic substance, more precisely, butadiene, the n-hexane, l-is alkene, benzene, toluene, O-dimethylbenzene, phenylcyanide, vinyl chloride, trichloroethylene, methyl alcohol, ethanol, isopropyl alcohol, formaldehyde, acetaldehyde, acetone, butanone, diethyl ketone, methylamine, ethamine, acetate, and propionic acid.

Below will be described in layout by a kind of circuit that is used to carry out display operation on the display panel with the upper type manufacturing.

Figure 16 schematically illustrates a kind of calcspar that is used to carry out the layout of the drive circuit that TV shows according to the ntsc television signal.

With reference to Figure 16, label 1000 expression display panels; Label 102 expression scanning circuits; Label 103 expression control circuits; Label 104 expression shift registers; Label 105 expression line storages; Label 106 expression sync separator circuits; And label 107 expression modulation signal generators.Label Vx and Va represent direct voltage source.

Below will narrate each functions of components.To DxM, end Dy1 is to DyN, and high-pressure side Hv is connected to external circuit by end Dx1 for display panel 1000.Opposite end Dx1 supplies with sweep signal to DxM, is used for order and drives the surface conductive electron emission device group of being arranged in display panel 1000 multiple electron beam sources, i.e. a delegation (N device) in M * N matrix.Opposite end Dy1 supplies with modulation signal to DyN, is used for the output electron beam of each surface conductive electron emission device of the selected delegation of gated sweep signal.From direct voltage source Va high-pressure side Hv is applied one for example for 10[kV] direct voltage.This direct voltage is one makes the electron beam of surface conductive electron emission device output obtain the accelerating voltage of enough energy with the activating fluorescent body.

Secondly will narrate scanning circuit 102.Scanning circuit 102 comprises M switching device (arriving the SM illustrative with S1 among Figure 16).Each switching device is selected the output voltage of direct voltage source Vx, or 0[V] voltage (earth level), and the end Dx1 that selects voltage to be electrically connected to display panel 1000 in the DxM one of corresponding on.The switching device S1 of scanning circuit 102 operates according to the control signal Tscan of control circuit 103 outputs to SM.By in conjunction with for example switch element of field-effect transistor, constitute switching device easily.

The direct voltage source Vx of present embodiment sets according to the characteristic of surface conductive electron emission device, with output 7[V] constant voltage.

103 functions of coordinating the each several part operation of control circuit are so that provide suitable demonstration according to outside received image signal.According to the synchronizing signal Tsync that sync separator circuit 106 (description) is sent here, 103 pairs of each several parts of control circuit produce control signal Tscan, Tsft and Tmry.The timing of each control signal will be described in detail with reference to Figure 21 later.

Sync separator circuit 106 is the circuit that synchronization signal components and luminance signal component are separated from the ntsc television signal of outside input.As everyone knows, can constitute sync separator circuit easily with a frequency sharing circuit (filter).As everyone knows, the synchronizing signal of being separated by sync separator circuit 106 comprises a vertical synchronizing signal and a horizontal-drive signal.In order to narrate conveniently, these signal indications are signal Tsync.

In order to narrate conveniently, the luminance signal of the image of separating from TV signal is partly used the DATA signal indication.This DATA signal sequence input shift register 104.Shift register 104 becomes parallel signal to the DATA conversion of signals as serial signal with the behavior unit of image, and operates according to the control signal Tsft that control circuit 103 is sent here.Control signal Tsft can be called the shift clock of shift register 104.Delegation's view data (corresponding to the driving data of N electron emission device) of serial conversion is with N parallel signal Id1 104 outputs to IdN from shift register.

Row register 105 be one one section of delegation's image data storage memory between in case of necessity.Line storage 105 is sent control signal Tmry here according to control circuit 103 and is suitably stored the content of Id1 to IdN.The content of line storage 105 storages is exported to I'dN with I'd1, and is input to modulation signal generator 107.Modulation signal generator 107 be one according to view data I'd1 to I'dN, be used for suitably modulating and driving the signal source of each surface conductive electron emission device.The output signal of modulation signal generator 107 is supplied with surface conductive electron emission device in the display panel 1000 by end Dy1 to DyN.

More than narrated the function of various piece shown in Figure 16.Before the narration whole operation, will narrate the operation of display panel 1000 in more detail to Figure 20 with reference to Figure 17.For convenience of description, the pixel count of display panel 1000 is set at 6 * 6 (being M=N=6).Yet obviously, the actual display panel 1000 that uses has much bigger electron emission device (pixel) number.

Figure 17 is the circuit diagram of a multiple electron beam source of expression, and wherein the surface conductive electron emission device is by 6 * 6 matrix wirings.In Figure 17, in order to narrate conveniently, the position of each device with (X, Y) coordinate representation: D (1,1), D (1,2) ..., and D (6,6).

When will be when driving this multiple electron beam source and show piece image, image be that sequence of unit forms with the row (row) that is parallel to X-axis.In order to drive and the corresponding electron emission device of delegation's image, in Dx6, the end with the corresponding row of display line is applied 0[V at end Dx1] voltage, and the residue end applies+7[V] voltage.With this operation synchronously, the modulation signal of modulation signal generator 107 outputs according to the image graphics supply side Dy1 of row to Dy6.

To narrate an example, wherein show image graphics as shown in figure 18.In order to narrate conveniently, the brightness of the light radiating portion of image graphics is equal mutually, and for example corresponding to 100[ftL].In display panel 1000, a kind of known P-22 is as fluorophor, and accelerating voltage is 10[kV], the repetition rate that image shows is 60[Hz], and the surface conductive electron emission device with above characteristic is as electron emission device.In this example, 14[V] voltage suitable.This voltage changes when each parameter change.

To image shown in Figure 180, with narration for during the third line photoemissive.Figure 19 is expression when from the third line of image when luminous, by end Dx1 to Dx6 with hold Dy1 to put on the view of the magnitude of voltage of multiple electron beam source to Dy6,

As Figure 19 obviously as seen, at the D (2,3) of the third line, each of the surface conductive electron emission device that D (3,3) and D (4,3) locate is to applying 14[V between the electrode] voltage, so that the output electron beam.Except that above three devices, each of other electron emission device is to applying between the electrode+7 (=14-7) [V] (hacures device among Figure 19) or 0 (7-7) [V] (white device among Fig. 9) voltages.7V or 0V voltage are equal to or less than the electronics emission threshold voltage (14V) of surface conductive electron emission device, therefore no electron beam output from these devices.

To remaining row,, drive this multiple electron beam source by behavior unit in a similar manner equally, thereby carry out display operation according to display graphics shown in Figure 180.Figure 20 shows that by the time sequence this drives the time diagram of operation.

As shown in figure 20, when multiple electron beam source when the first row order drives, can realize not having the image demonstration of glimmering.In order to change the light emission brightness of display graphics, promptly increase (minimizing) brightness, make to put on the pulse duration change big (diminish) of end Dy1 to the modulation signal of Dy6.Use this operation, can realize modulation.

More than narrated the driving method of the display panel 100 of the multiple electron beam source that uses 6 * 6 pixels.Narrate the whole operation of device shown in Figure 16 below with reference to the time diagram of Figure 21.

With reference to Figure 21, the timing of the luminance signal DATA that (1) expression is separated from the NTSC signal of outside input by sync separator circuit 106.As shown in figure 21, the DATA signal is according to first row, and second goes, the third line ... sequence send.Synchronous with this operation, as (2) among Figure 21 were represented, shift clock Tsft outputed to shift register 104 from control circuit 103.When in shift register 104, having accumulated the view data of delegation synchronously with shift clock Tsft, represented timing place of memory write signals Tmry (3) in Figure 21 outputs to line storage 105 from control circuit 103, so that store and preserve the view data of delegation's (N device) in line storage 105.As a result, as the I ' d1 of the output signal of line storage 105 to the content of I ' dN in Figure 21 regularly (4) change.

From another point of view, be used for the content of control signal Tscan of operation of gated sweep circuit 102 by regularly (5) expression of Figure 21.More precisely, in the time will driving first row, have only switching device S1 to apply 0[V in the scanning circuit 102] voltage, and the residue switching device has applied 7[V] voltage.In the time will driving second row, have only switching device S2 to apply 0[V] voltage, and the residue switching device has applied 7[V] voltage.This mode is applicable to all row, and operates controlled.Synchronous with this operation, the modulation signal corresponding with each row timing (6) in Figure 21 outputs to display panel 1000 from modulation signal generator 107.

Though in above narration, do not have concrete regulation, but shift register 104 and row register 105 can or a kind of digital signal type, or a kind of analog signal types, as long as conversion of the serial of picture signal or storage are to carry out at a predetermined velocity with regularly.With regard to the digital signal type, the output signal DATA of sync separator circuit 106 must convert digital signal to.This processing can realize easily by the A/D converter of output arrangement at sync separator circuit 106.

Use aforesaid operations, can use display panel 1000 to carry out TV and show.

Figure 22 represents the phantom according to the exemplary configurations of a kind of color image display device of second embodiment of the invention.

With reference to Figure 22, a large amount of ballistic devices of parallel arrangement on a substrate 201 (for example, the Japanese publication No.1-31332 that submits to by the applicant).The two ends of each ballistic device are connected by wiring layer, and after the substrate 201 with many this row is fixed on one in the plate 202.After this, on substrate 201, arrange respectively to have the grid 206 of a plurality of electronics through holes 205, so that vertical with the straight line calibrating direction of electron emission device.Partly locate to arrange a panel 210 (constituting) by a support 211 at about 5mm on the substrate 201 by a fluorescent film 208 of formation and a metal backing 209 on the inner surface of glass substrate 207.Counter plate 210, support 211, and the back plate 202 the bonding part apply sintered glass, and in about 400 ℃ to 500 ℃ air or nitrogen environment sintering 10 minutes or the longer time, thereby be tightly connected various piece.Back plate 202 also is fixed on the substrate 201 with sintered glass.

With reference to Figure 22, label 204 expression electron emission parts.As mentioned above, in the present embodiment, panel 210, support 211, and plate 202 one of formation in back seal 212.Arranging back plate 202 mainly is at the bottom of the reinforcing line 201.If substrate 201 self has sufficient intensity, can omit back plate 202.In this case, support 211 can be sealed directly on the substrate 201, and seal 212 can be by panel 210, support 211, and substrate 201 constitutes.

The fluorescent film 208 of panel 210 is formed by black conducting materials 213 that is called secret note (Fig. 5 A) and fluorophor 214.The purpose that secret note is set is for by colour being shown the coating layer portion blackening between necessary three kinds of primary colors fluorophor, make blend of colors or other situation become more not obvious, and in order to suppress the reduction of the contrast that external light reflection causes in fluorescent film 208 places.In the present embodiment, use and arrange bar shaped fluorophor (Fig. 5 A) along the straight line calibrating direction of electron emission device (promptly vertical direction) with grid 206.Be pre-formed secret note, and between secret note, use each colour phosphor, form fluorescent film 208 thus.

A kind of main component be the material of general graphite as the material that constitutes secret note, and can use any material, as long as its conduction and allow light to pass hardly or reflect.As for the method for giving glass substrate 207 coatings with fluorophor, demonstration can be used the precipitation method or print process to monochrome.Yet, in the present embodiment, colour is shown a kind of slurry process of use.Certainly, even colour is shown when using print process, also can similarly be filmed.

Metal backing 209 is arranged on the inner surface of fluorescent film 208 usually.The purpose that metal backing 209 is set is to increase brightness by mirroring from fluorophor emission and the part light propagated to this inner surface for counter plate 210 sides, for metal backing 209 is used as an electrode that is used to apply beam voltage, collide and fluorophor is damaged in order to prevent and seal in 212 the anion that produces, and for other similar purpose.Metal backing 209 is by forming fluorescent film 208, the inner surface of fluorescent film 208 is used trowel photoreduction process (being commonly referred to film forming), and with vacuum deposition deposit aluminium (Al) and forming thereon.In order to increase the conductivity of fluorescent film 208, on the outer surface of fluorescent film 208, form a transparency electrode (not shown) sometimes.In the present embodiment, omitted transparency electrode, because metal backing 209 is enough to obtain enough conductivity.At the panel 210 that is tightly connected, support 211, and during the bonding part of back plate 202, must realize fully location, because colour is shown that fluorophor 214 of all kinds must be made corresponding with electron emission device 110.

By the glass container that forms with upper type by vacuum pump by the blast pipe (not shown) of finding time.After reaching enough vacuum, by outer end Dr1 to DrM and DL1 to DLM, between device electrode 203, apply a voltage, thereby carry out charged forming process.Use this process, form electron emission part 204, and on substrate 201, form electron emission device 204.With a gas lamp about 10 ^-6Thermal exhaust pipe (not shown) in the Torr vacuum environment, with the melting welding blast pipe, thus sealed enclosure 212.At last, carry out a breathing process after sealing, to keep vacuum.This be one before sealing/be heated by resistive afterwards or RF heats a breathing film (not shown) of pre-position in the image display device and forms the process of deposited film at once.Breathing film mainly is made of Ba.The absorption of breathing film keeps vacuum.

In by the image display device that forms with upper type, to DLM electron emission device is applied voltage to DrM and DL1 by outer end Dr1, thereby make each electron emission part 204 emitting electrons.Electrons emitted is passed the electronics through hole of modulator electrode 206, and puts on several kV of a metal backing 209 or a transparency electrode (not shown) or higher voltage acceleration by one by high-pressure side Hv, so that electron bombard fluorescent film 208.Use this operation, fluorescent film is energized luminous.When according to the voltage of view data by outer end G1 when GN puts on modulator electrode 206, the electron beam control of passing the electronics through hole is to show piece image.

In the present embodiment, respectively there is the modulator electrode 206 of the electronics through hole 205 of a plurality of about 50 μ m diameters to pass through a SiO as insulating barrier ₂Layer (not shown) is arranged in about 10 μ m places on the substrate 201.When applying the 6kV accelerating voltage, by the on/off of 50V or littler modulation electric pressure energy controlling electron beam.

Figure 23 is the grid voltage V that expression puts on modulator electrode 206 _GAnd flow to the curve chart that concerns between the fluorophor surface current of fluorescent film 208.At grid voltage V _GBe increased to certain threshold voltage VG1 or on the time, the fluorophor surface current goes into circulation.As grid voltage V _GWhen further increasing, the fluorophor surface current is dull to be increased, and as shown in figure 23, finally grid voltage VG2 or on the time saturated.

Though comprise the details of each several part material be not limited to above-mentioned those, and can select according to the application purpose of image display device, above-mentioned layout is that to make image display device necessary.

The basic layout and the manufacture method of the display panel of second embodiment have more than been narrated.Equally in a second embodiment, his-and-hers watches surface conduction electron ballistic device applies a storage voltage, so that made characteristic deviation arrive the noise safety zone before driving operation.For example vacuum environment is identical with condition among first embodiment with other conditions of similarity at that time.

Display panel by above process manufacturing is connected to a drive circuit that is used for the TV demonstration, and is driven.Be different from prior art, can't see rapid variation by the caused display brightness of characteristic variations of surface conductive electron emission device.

About the main layout of the drive circuit of second embodiment, the output voltage of modulation signal generator is set at the voltage that is suitable for the grid modulation, and is connected to end G1 to GN.Set the output voltage of scanning circuit 102, so that scanning voltage=14.0[V], and scanning voltage=0[V not], and be connected to end DL1 to DLM.End Dr1 always is set at 0[V to DrM].

Figure 24 is the calcspar of the example of a multifunctional display apparatus of expression, it can use the surface conductive electron emission device to show from various image information source on as the display panel 1000 of electron emission device at one, for example television broadcasting, the image information that is provided.Display panel 1000 is provided with a surface conductive electron emission device that has been offset electron emission characteristic as described in first and second embodiment in advance.

With reference to Figure 24, label 1000 expression display panels; The driver of label 2101 expression display panels; Label 2102 expression display panel controllers; Label 2103 expression multiplexer; Label 2104 expression decoders; Label 2105 expression input/output interface circuit; Label 2106 expression CPU; Label 2107 presentation video generators; Label 2108 to 2110 presentation video memory interface circuits; Label 2111 presentation video input interface circuits; Label 2112 and 2113 expression TV signal receiving units; And label 2114 expression input units.

When this routine display unit is received a signal, when for example comprising the TV signal of video information and audio frequency both information, make video image and sound reproduction certainly simultaneously.To omit the reception of narration and audio-frequency information, separate, and handle and store relevant circuit and loud speaker, because these parts are directly not relevant with characteristics of the present invention.Below will be according to the function of picture signal stream narration each several part.

TV signal receiving unit 2113 is one and is used for receiving by wireless transmitting system that for example electric wave transmits or the circuit of the television image signal that space optical communication is transmitted.Standard to the TV signal that received is not particularly limited, and can use NTSC, and is any in PAL and the SECAM standard.In addition, be suitable for the good characteristics of large display screen and a large amount of pixels, comprise that the TV signal (for example, a kind of by the represented signal that is used for so-called high definition TV of MUSE standard) of a large amount of scan lines is a kind of preferred signal source with regard to utilizing this display panel.The TV signal that is received by TV signal receiving unit 2113 outputs to decoder 2104.

TV signal receiving unit 2112 is one and is used for receiving by cable communication system, for example the circuit of the television image signal that transmits of coaxial cable system or fibre system.Identical with TV signal receiving unit 2113, the standard of the TV signal that received is not particularly limited.The TV signal that is received by TV signal receiving unit 2112 also outputs to decoder 2104.Image input interface circuit 2111 is one and is used for receiving from image-input device, for example the circuit of the picture signal that provided of television camera or image reading scan device.The picture signal that receives outputs to decoder 2104.

Video memory interface circuit 2110 is circuit that are used for the picture signal of receiver, video video tape recorder (hereinafter economizing slightly VTR) storage.The picture signal that receives outputs to decoder 2104.Video memory interface circuit 2109 is circuit that are used for receiving the picture signal that optic disk stores.The picture signal that receives outputs to decoder 2104.Video memory interface circuit 2108 is one and is used for from a device that the still frame image dish of for example storing the still frame view data receives the circuit of picture signal.The still frame view data that receives outputs to decoder 2104.Input/output interface circuit 2105 is one and is used for this routine display unit is connected to outer computer computer network, or output equipment, for example circuit of printer.On demand, between the CPU 2106 of imaging device and external device (ED), input/output interface circuit 2105 not only I/O view data or character data/graphical information, and can I/O control signal or numerical data.

Pictcure generator 2107 is view data or the characters/graphics information that a basis is imported by input/output interface circuit 2105 from the outside, or from view data or characters/graphics information that CPU 2106 exports, is used to produce the circuit of display image data.This circuit comprises and is used to produce the necessary various circuit of view data, these circuit comprise a writable memory that is used for accumulative image data or characters/graphics information, the read-only memory of storage and the corresponding image graphics of character code, and a processing section that is used for carries out image processing.The display image data that is produced by this circuit outputs to decoder 2104.Yet on demand, display image data can output to external computer networks or printer by input/output interface circuit 2105.

CPU 2106 is main to carry out operation control with display unit, and with the generation of display image, select and edit relevant operation.For example, to control signal of multiplexer 2103 outputs, thereby suitably select or make up the picture signal that will on display panel, show.At that time,, display controller 2102 is produced a control signal, thereby suitably control the operation of display panel, comprise the frame display frequency, scan method (for example, interlacing scan or not interlacing scan), and the number of scanning lines in the frame according to the picture signal that will show.In addition, CPU 2106 is directly to pictcure generator 2107 output image datas or characters/graphics information, or by input/output interface circuit 2105 visit outer computer or memories, with input image data or characters/graphics information.

CPU 216 can operate and be used for other purpose.For example, identical with personal computer or word processor, CPU 2106 can be directly and the function of generation or process information linked together.Selectively, as mentioned above, CPU 2106 can be connected to external computer networks by input/output interface circuit 2105, so that cooperate with external device (ED), for example carries out numerical computations.

Input unit 2114 is used for to CPU 2106 input instructions, program or data by the user.Except that keyboard and mouse, also can use various input units, joystick for example, bar code reader, language recognition device.

Decoder 2104 is that the various picture signal counter-rotatings circuit 2107 to 2113 inputs change three kinds of primary signals into, or the circuit of luminance signal and I and Q signal.As shown in phantom in Figure 24, decoder 2104 preferably includes a video memory, so as can processing requirements a memory to be used for the TV signal of inverse transform, MUSE signal for example.Video memory makes the demonstration of still frame image become convenient.In addition, video memory can make image processing, comprises minimizing, adds, and amplifies, dwindle and splicing becomes convenient, and can with pictcure generator 2107 and 2106 collaborative editing view data.Multiplexer 2103 is suitably selected display image according to the control signal of CPU 2106 inputs.More precisely, multiplexer 2103 is selected the picture signal of hope from the inverse transform picture signal of decoder 2104 inputs, and a picture signal of selecting is outputed to driver 2101.Like this, multiplexer 2103 can realize so-called multiwindow TV, and wherein screen is divided into a plurality of zones, so that pass through optionally converted image signal in a frame display time interval, shows multiple image in each zone.Display controller 2102 is the control signals according to CPU 2106 inputs, is used for the circuit of Control Driver 2101 operations.

For the basic operation of display panel, 2102 pairs of drivers of display controller 2101 output is used to control the signal of operating sequence of the driving power (not shown) of display panel.About driving the method for display panel, signal that is used for control frame display frequency or scan method (for example, interlacing scan or not interlacing scan) of 2102 pairs of drivers of display controller, 2101 outputs.On demand, 2,102 one of output of 2102 pairs of drivers of display panel controller and picture quality are regulated, and comprise the brightness of image, contrast, the control signal that the color harmony acutance is relevant.

Driver 2101 is circuit that are used to produce the drive signal of supplying with display panel 1000.Driver 2101 is operated according to the picture signal of multiplexer 2103 inputs and the control signal of display panel controller 2102 inputs.

More than narrated the function of each several part.In this example, the display unit with layout shown in Figure 24 can show on display panel 1000 from the image information of various image information source inputs.More precisely, comprise that the various picture signals of television broadcasting signal stand the inverse transform of decoder 2104, suitably select by multiplexer 2103, and enter drive 2101.

Display panel controller 2102 produces a control signal that is used for the operation of Control Driver 2101 according to the picture signal that will show.Driver 2101 is supplied with drive signal according to picture signal and control signal to display panel 1000.Use this operation, on display panel 1000, show piece image.Operation series is by CPU 2106 centralized control.

This display unit of this example not only with decoder 2104 in the video memory that comprises, pictcure generator 2107, and CPU 2106 is linked together, shows the view data of selecting from a plurality of image informations, and can also comprise amplification to shown information and executing image processing, dwindle rotation, move, the edge increases the weight of, and reduces, add color conversion, and aspect ratio conversion, and can also the carries out image editor, comprise splicing, deletion, merge, replace, and insert.Though in the narration of this example, do not particularly point out,, can arrange to be specifically designed to the circuit that audio-frequency information is handled and edited for image processing and picture editting.

This routine display unit can realize the function of various devices, these devices for example have the television broadcasting display unit, the teleconference terminal installation, the image editing apparatus that is used for still frame and moving image, the transaction terminal device, for example terminal or word processor, game machine, and other similar device.Therefore, this display unit is with a wide range of applications for industry and private the use.

Figure 24 only is illustrated in and uses layout one example of surface conductive electron emission device as the display unit of electron source in the display panel, and certainly, display unit is not limited to this layout.For example, in part shown in Figure 24, can omit with application purpose the relevant circuit of unwanted function.On the contrary, part can add according to application purpose.When this routine display unit is used as video telephone, preferably, can add a television camera, a microphone, a lighting device, an emission/receiving circuit that comprises modulator-demodulator.

Because this routine display unit is used the electron source of surface conductive electron emission device as it,, therefore can reduce the degree of depth of display unit so can realize low section display panel.In addition, owing to use the surface conductive electron emission device can enlarge easily as the display panel of electron source, and it has high brightness and wide visual angle, so imaging device can profoundly show lively image with printing truly.

The present invention can be applied to by multiple arrangement, master computer for example, and an interface and the system that printer constituted, or be applied to a device that comprises single assembly.In addition, the present invention also is applicable to a kind of situation, i.e. the present invention is by providing program to a system or device and accomplished.In this case, storage constitutes the present invention according to the memory intermediary of program of the present invention.System or device by limiting mode in advance by program is read into system or device and is operated from memory intermediary.

As above narrate, according to the present invention, can prevent to drive operating period brightness reduction or brightness and change, it is that time causes in that the multiple electron beam source that uses a plurality of surface conductive electron emission devices is applied to an image display apparatus that brightness reduction here or brightness change.

Owing to can realize many embodiment that obviously differs widely of the present invention under its spirit and scope not violating, so much less, remove the accessory claim qualification, the present invention is not limited to its specific embodiment.

Claims

1. electron generating comprises:

A plurality of surface conductive electron emission devices are pressed matrix arrangement on a substrate,

It is characterized in that, after the electron emission part of each in a plurality of surface conductive electron emission devices all forms, described a plurality of surface conductive electron emission devices are applied a potential pulse, and its value is bigger with the pairing magnitude of voltage of noise voltage sum that may enter described surface conductive electron emission device than the maximum of normal drive voltage.

2. according to the device of claim 1, wherein said surface conductive electron emission device is arranged in the vacuum tank, and wherein the partial pressure of organic gas is not more than 133 * 10 ^-8Pa.

3. according to the device of claim 1 or 2, wherein said a plurality of surface conductive electron emission devices are arranged by bidimensional by matrix with the column wiring layer by the row wiring layer and are connected.

4. according to the device of claim 1 or 2, wherein the value of pulse voltage is peaked 1.05 to 1.5 times of driving voltage.

5. according to the device of claim 3, wherein the value of pulse voltage is peaked 1.05 to 1.5 times of driving voltage.

6. according to the device of claim 1 or 2, wherein said a plurality of surface conductive electron emission devices are arranged by bidimensional, and this device also comprises the gate electrode that is used to regulate from described surface conductive electron emission device institute electrons emitted bundle quantity.

7. imaging device comprises:

One according to any one electron generating in the claim 1 to 6; And

A fluorophor, it encourages under electron beam irradiation and is luminous.

8. method of making electron generating, this electron generating has:

A multiple electron beam source is wherein arranged a plurality of surface conductive electron emission devices, and

Drive unit is used for according to input image signal described multiple electron beam source being applied a driving voltage, and this method comprises the steps:

After the electron emission part of each in a plurality of surface conductive electron emission devices all forms, apply a characteristic deviation voltage, its value is bigger with the pairing magnitude of voltage of noise voltage sum that may enter described surface conductive electron emission device than the maximum of driving voltage.

9. according to the method for claim 8, wherein the partial pressure at an organic gas is not more than 133 * 10 ^-8Apply characteristic deviation voltage in the environment of Pa.

10. according to any one method in claim 8 and 9, wherein characteristic deviation voltage is peaked 1.05 to 1.5 times of driving voltage.