CN107993956A - The preparation method of line-spacing standard sample of photo - Google Patents
The preparation method of line-spacing standard sample of photo Download PDFInfo
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- CN107993956A CN107993956A CN201711223205.6A CN201711223205A CN107993956A CN 107993956 A CN107993956 A CN 107993956A CN 201711223205 A CN201711223205 A CN 201711223205A CN 107993956 A CN107993956 A CN 107993956A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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Abstract
The embodiment of the present invention provides a kind of preparation method of line-spacing standard sample of photo, is related to technical field of semiconductors.This method includes：Substrate is subjected to the first pretreatment；Upper surface grown silicon nitride layer in the first area of the substrate；The silicon nitride layer is etched to the substrate, the silicon nitride optical grating construction and/or silicon nitride cell structure of multiple and different periodic dimensions are formed in the first area；The substrate is subjected to the second pretreatment；Silicon dioxide layer is grown in the upper surface of the second area of the substrate；The silicon dioxide layer is etched to the substrate, the silicon dioxide grating structure and/or silica cell structure of multiple and different periodic dimensions are formed in the second area；Metal layer is grown in the upper surface of the second area.The present invention can produce the line-spacing standard sample of photo for meeting a variety of measuring instrument demands by time processing technique, and can reduce cost.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of preparation method of line-spacing standard sample of photo.
Background technology
The test problem of a large amount of line sizes involved in integrated circuit and microwave power device manufacture craft process, to line width
The accurate measurement of parameter, is the important means for ensureing device quality.At present, micro-nano feature sizes measurement class in microelectronic industry
Instrument includes wire width measuring instrument, scanning electron microscope, atomic force microscope etc., its measurement parameter is the lines ruler of sample
It is very little.Finding shows that China possesses various feature sizes measurement quasi-instruments nearly two over thousands of, this quasi-instrument is in research and production
Unit is widely used, and the popularity rate of instrument is very high.Micro-nano feature sizes measure quasi-instrument usually using line-spacing mark
Quasi- print is calibrated, and the structure of line-spacing print includes two kinds of optical grating construction and cell structure.In order to ensure that the quasi-instrument is being surveyed
Accurate data is obtained during amount, it should they are calibrated using a series of corresponding line-spacing standard sample of photo.
At present, only the line-spacing standard sample of photo of the cell structure of micron dimension, the size and structure of line-spacing print cannot expire
The demand of sufficient wire width measuring quasi-instrument calibration.
The content of the invention
In view of this, an embodiment of the present invention provides a kind of preparation method of line-spacing standard sample of photo, to solve the prior art
The size and structure of center line distance standard sample of photo cannot meet the problem of the needs of wire width measuring quasi-instrument calibration.
The embodiment of the present invention provides a kind of gallium oxide field-effect transistor method, including：It is pre- that substrate is carried out first
Processing, removes the impurity of the substrate surface；
Upper surface grown silicon nitride layer in the first area of the substrate by the described first pretreatment；
The silicon nitride layer is etched to the substrate, silicon nitride graphic structure is formed in the first area, wherein, it is described
Silicon nitride graphic structure is the silicon nitride optical grating construction and/or silicon nitride cell structure of multiple and different periodic dimensions；
The substrate is subjected to the second pretreatment, removes the impurity of the substrate surface；
Silicon dioxide layer is grown in the upper surface of the second area of the substrate by the described second pretreatment；Wherein, it is described
First area and the second area are non-overlapping；
The silicon dioxide layer is etched to the substrate, silicon dioxide pattern structure is formed in the second area, wherein,
The silicon dioxide pattern structure is the silicon dioxide grating structure and/or silica grid knot of multiple and different periodic dimensions
Structure；
Metal layer is grown in the upper surface of the second area for the substrate for having formed the silicon dioxide pattern structure.
Optionally, the upper surface grown silicon nitride layer bag of the first area of the substrate by the described first pretreatment
Include：
The first protective layer is formed in the upper surface of the second area of the substrate by the described first pretreatment；
Deposited 50 nanometers to 100 and received in the upper surface for forming the substrate of first protective layer by chemical vapour deposition technique
The silicon nitride layer of rice.
Further, the etching silicon nitride layer forms nitridation silicon graphics in the first area to the substrate
Structure, including：
The first photoresist is coated in the upper surface of the silicon nitride layer；
Photoetching is carried out by e-beam lithography, the first photoetching offset plate figure structure is formed in the first area；
Etched by etching technics not by the silicon nitride layer of first photoresist masking, be etched to the substrate, formed
Multiple periodic dimensions are 200 nanometers to 500 nanometers of silicon nitride optical grating construction and/or silicon nitride cell structure；
Remove remaining first photoresist；
Remove first protective layer and the silicon nitride layer of the first protective layer upper surface.
Optionally, the upper surface of the second area of the substrate by the described second pretreatment grows silicon dioxide layer
Including：
The second protective layer is formed in the upper surface of the first area of the substrate by the described second pretreatment；
By thermal oxidation technology 80 nanometers to 120 nanometers are grown in the upper surface for forming the substrate of second protective layer
Silicon dioxide layer.
Further, the etching silicon dioxide layer forms silica to the substrate in the second area
Graphic structure, including：
The second photoresist is applied in the upper surface of the silicon dioxide layer；
Photoetching is carried out by projection lithography technique, the second photoetching offset plate figure structure is formed in the second area；
Etched by etching technics not by the silicon dioxide layer of second photoresist masking, be etched to the substrate, shape
It is respectively 1 micron to 10 microns of silicon dioxide grating structure and/or silica cell structure into multiple periodic dimensions；
Remove remaining second photoresist.
Further, the upper table of the second area in the substrate for having formed the silicon dioxide pattern structure is looked unfamiliar
Long metal layer includes：
10 nanometers to 20 nanometers of crome metal is sputtered in the upper surface for having formed the substrate of the silicon dioxide pattern structure
Layer；
Remove second protective layer, the second protective layer upper surface silicon dioxide layer and second protective layer on
The metallic chromium layer on surface.
Optionally, it is described to include the first pretreatment of substrate progress：
The substrate is put into the first cleaning solution that temperature is 80 DEG C to 90 DEG C and is cleaned 10 minutes to 15 minutes；Wherein,
First cleaning solution be distilled water, ammonium hydroxide and hydrogen peroxide mixed solution, the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide
For 4:1:1；
By the substrate distilled water flushing to neutrality；
The substrate is cleaned 2 minutes to 5 minutes in a solution of hydrofluoric acid；
By the substrate distilled water flushing to neutrality；
The substrate is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, institute
The mixed solution that the second cleaning solution is distilled water, hydrochloric acid and hydrogen peroxide is stated, the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is
4:1:1；
By the substrate distilled water flushing to neutrality；
The substrate is dried up with nitrogen.
Optionally, it is described to include the second pretreatment of substrate progress：
The substrate is put into the first cleaning solution that temperature is 80 DEG C to 90 DEG C and is cleaned 10 minutes to 15 minutes；Wherein,
First cleaning solution be distilled water, ammonium hydroxide and hydrogen peroxide mixed solution, the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide
For 4:1:1；
By the substrate distilled water flushing to neutrality；
The substrate is cleaned 2 minutes to 5 minutes in a solution of hydrofluoric acid；
By the substrate distilled water flushing to neutrality；
The substrate is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, institute
The mixed solution that the second cleaning solution is distilled water, hydrochloric acid and hydrogen peroxide is stated, the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is
4:1:1；
By the substrate distilled water flushing to neutrality；
The substrate is dried up with nitrogen.
Optionally, the method further includes：
The first alignment mark is formed in the silicon nitride graphic structure correspondence position；
The second alignment mark is formed in the silicon dioxide pattern structure correspondence position.
Optionally, in the silicon nitride optical grating construction and/or the silicon nitride cell structure, the width of the silicon nitride layer
Degree is equal with the width between two neighboring silicon nitride layer；
In the silicon dioxide grating structure and/or the silica cell structure, the width of the silicon dioxide layer
Degree is equal with the width between two neighboring silicon dioxide layer.
Existing beneficial effect is the embodiment of the present invention compared with prior art：The embodiment of the present invention passes through semiconductor technology
The line-spacing standard sample of photo of a variety of different cycles sizes, different structure is made on the same substrate, passes through time processing technique system
The line-spacing standard sample of photo for meeting a variety of measuring instrument demands is made, and cost can be reduced.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is that the preparation method of line-spacing standard sample of photo provided in an embodiment of the present invention realizes flow chart；
Fig. 2 is that the preparation method of line-spacing standard sample of photo provided in an embodiment of the present invention realizes flow chart；
Fig. 3 is that the preparation method of line-spacing standard sample of photo provided in an embodiment of the present invention realizes flow chart；
Fig. 4 is silicon nitride graphic structure schematic diagram provided in an embodiment of the present invention；
Fig. 5 is silicon dioxide pattern structure diagram provided in an embodiment of the present invention；
Fig. 6 is silicon nitride graphic structure schematic diagram provided in an embodiment of the present invention；
Fig. 7 is silicon dioxide pattern structure diagram provided in an embodiment of the present invention.
Embodiment
In being described below, in order to illustrate rather than in order to limit, it is proposed that such as tool of particular system structure, technology etc
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that these are specific
The present invention can also be realized in the other embodiments of details.In other situations, omit to well-known system, device, electricity
Road and the detailed description of method, in case unnecessary details hinders description of the invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
Please refer to Fig.1, the preparation method of line-spacing standard sample of photo includes：
Step S101, the first pretreatment is carried out by substrate 101, removes the impurity on 101 surface of substrate.
In embodiments of the present invention, substrate 101 is silicon substrate, selects the silicon wafer of twin polishing as substrate, silicon wafer
The crystal orientation of disk is<100>.The purpose that substrate 101 is carried out the first pretreatment is to remove the impurity on 101 surface of substrate.
Optionally, the concrete methods of realizing of step S101 is：That the substrate 101 is put into that temperature is 80 DEG C to 90 DEG C
Cleaned 10 minutes to 15 minutes in one cleaning solution；Wherein, first cleaning solution is the mixing of distilled water, ammonium hydroxide and hydrogen peroxide
Solution, the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide is 4:1:1；By the distilled water flushing to neutrality of substrate 101；Will
The substrate 101 cleans 2 minutes to 5 minutes in a solution of hydrofluoric acid；By the distilled water flushing to neutrality of substrate 101；Will
The substrate 101 is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, described second is clear
Washing lotion is the mixed solution of distilled water, hydrochloric acid and hydrogen peroxide, and the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is 4:1:1；Will
The distilled water flushing to neutrality of substrate 101；The substrate 101 is dried up with nitrogen.
Step S102, the upper surface grown silicon nitride layer in the first area of the substrate 101 by the described first pretreatment
102。
In embodiments of the present invention, substrate 101 is divided and is used to prepare nitridation for first area and second area, first area
Silicon graphics structure, second area are used to prepare silicon dioxide pattern structure, and first area and second area are non-overlapping.Pass through chemistry
Upper surface grown silicon nitride layer 102 of the vapour deposition process in first area.
(1) and Fig. 2 (3) are please referred to Fig.2, optionally, the concrete methods of realizing of step S102 is：Pre- by described first
The upper surface of the second area of the substrate 201 of processing forms the first protective layer 202；By chemical vapour deposition technique described in formation
The upper surface of the substrate 201 of first protective layer 202 deposits 50 nanometers to 100 nanometers of silicon nitride layer 203.
In embodiments of the present invention, one layer of photoresist can be deposited in the upper surface of the second area of substrate 201 and is used as the
One layer of barrier bed of one protective layer 202 or covering can be shielding plate as the first protective layer 202, barrier bed, including but unlimited
In substrate slice.Looked unfamiliar 50 nanometers to 100 and received in the upper table of substrate 201 by plasma enhanced chemical vapor deposition (PECVD)
The silicon nitride layer 203 of rice, silicon nitride layer 203 are covered in first area in the upper surface of substrate 201 and second area first and protect
The upper surface of sheath 202.
Step S103, etches the silicon nitride layer 102 to the substrate, nitridation silicon graphics knot is formed in the first area
Structure 103, wherein, silicon nitride graphic structure 103 is the silicon nitride optical grating construction and/or silicon nitride grid of multiple and different periodic dimensions
Structure.
(4) to Fig. 2 (8) are please referred to Fig.2, optionally, the specific implementation of step S103 is：In the silicon nitride layer
203 upper surface coats the first photoresist 204；Photoetching is carried out by e-beam lithography, light is formed in the first area
Photoresist graphic structure 205；It is not photo-etched the silicon nitride layer 203 of glue masking by etching technics etching, is etched to the substrate
201, form silicon nitride optical grating construction and/or silicon nitride cell structure 206 that multiple periodic dimensions are 200 nanometers to 500 nanometers；
Remove remaining photoresist；Remove first protective layer 202 and the silicon nitride layer 203 of 202 upper surface of the first protective layer.
By above-mentioned technique, silicon nitride graphic structure 206 is formed in the upper surface of the first area of substrate 201, wherein, nitrogenize silicon graphics
The silicon nitride optical grating construction and/or silicon nitride cell structure that structure 206 is 200 nanometers to 500 nanometers for multiple periodic dimensions.
In embodiments of the present invention, first, the first photoresist 204, the first photoetching are coated in the upper surface of silicon nitride layer 203
204 model GL2000 photoresists of glue, 204 thickness of the first photoresist is 230 nanometers, and 2 points are toasted at a temperature of 180 DEG C
Clock, then, the graphic structure for needing to make directly is write out using e-beam lithography, in neighbour two on the first photoresist 204
Develop 100 seconds in toluene solution, then how 60s is fixed in alkane in decahydro, remove the first photoresist of transparent area, form the first photoetching
Glue pattern structure 205, the first photoetching offset plate figure structure 205 be optical grating construction that periodic dimensions are 200 nanometers to 500 nanometers and/
Or cell structure, dry etch process is reused afterwards to be performed etching, the nitrogen that will do not sheltered by the first photoetching offset plate figure structure 205
SiClx layer 203 etches away, and is etched to substrate 201, etching gas SF6, etch rate 15nm/min, forms nitridation silicon graphics
Structure 206, wherein, the nitridation silicon grating knot that silicon nitride graphic structure 206 is 200 nanometers to 500 nanometers for multiple periodic dimensions
Structure and/or silicon nitride cell structure, finally remove the first photoresist 204 and the first photoetching offset plate figure structure 205 of second area,
Remove the silicon nitride layer 203 of 202 upper surface of the first protective layer 202 and the first protective layer.In a kind of possible implementation, the
One protective layer 202 is photoresist layer, and photoresist layer, the silicon nitride layer of photoresist layer upper surface are removed by photoresist stripping process
203 also remove therewith.In alternatively possible implementation, the first protective layer 202 is one layer of barrier bed, is blocked described in removal
Layer, the silicon nitride layer 203 of barrier bed upper surface also remove therewith.By above-mentioned technique, the upper table in the first area of substrate 201
Face forms the silicon nitride optical grating construction and/or silicon nitride cell structure that multiple periodic dimensions are 200 nanometers to 500 nanometers.
In embodiments of the present invention, the periodic dimensions of silicon nitride optical grating construction and/or silicon nitride cell structure are 200 nanometers
To 500 nanometers, for calibrating line width measuring instrument, scanning electron microscope and atomic force microscope.
Step S104, carries out the second pretreatment by the substrate 101, removes the impurity of the substrate surface.
Optionally, the specific implementation of step S104 is：That the substrate 101 is put into that temperature is 80 DEG C to 90 DEG C
Cleaned 10 minutes to 15 minutes in one cleaning solution；Wherein, first cleaning solution is the mixing of distilled water, ammonium hydroxide and hydrogen peroxide
Solution, the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide is 4:1:1；By the distilled water flushing to neutrality of substrate 101；Will
The substrate 101 cleans 2 minutes to 5 minutes in a solution of hydrofluoric acid；By the distilled water flushing to neutrality of substrate 101；Will
The substrate 101 is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, described second is clear
Washing lotion is the mixed solution of distilled water, hydrochloric acid and hydrogen peroxide, and the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is 4:1:1；Will
The distilled water flushing to neutrality of substrate 101；The substrate 101 is dried up with nitrogen.By above-mentioned processing step, obtain clean
Net substrate surface.
Step S105, grows silica in the upper surface of the second area of the substrate 101 by the described second pretreatment
Layer 104.
(1) and Fig. 3 (2) are please referred to Fig.3, optionally, the specific implementation of step S105 is：Passing through described second
The upper surface of the first area of the substrate 201 of pretreatment forms the second protective layer 207；By thermal oxidation technology in the lining
The upper surface at bottom 201 grows 80 nanometers to 120 nanometers of silicon dioxide layer 208.
In embodiments of the present invention, silicon dioxide layer 208 is covered in the upper surface and second area of the second protective layer 207
The upper surface of substrate 201.By dry-oxygen oxidation, wet-oxygen oxidation again dry-oxygen oxidation method grow silicon dioxide layer 208, wherein,
Wet-oxygen oxidation uses hydrogen-oxygen synthetic method.The silicon nitride graphic structure 206 of first area is protected by the second protective layer 207.
Step S106, etches the silicon dioxide layer 104 to the substrate 101, titanium dioxide is formed in the second area
Silicon graphics structure 105, wherein, silicon dioxide pattern structure 105 is the dioxy that multiple periodic dimensions are respectively 1 micron to 10 microns
SiClx optical grating construction and/or silica cell structure.
(3) to Fig. 3 (6) are please referred to Fig.3, optionally, the specific implementation of step S106 is：In the silicon dioxide layer
208 upper surface coats the second photoresist 209；Photoetching is carried out by projection lithography technique, second is formed in the second area
Photoetching offset plate figure structure 210；By etching technics etching not by the silicon dioxide layer 208 of second photoresist masking, etching
To the substrate 201, silicon dioxide pattern structure 211 is formed, wherein, silicon dioxide pattern structure 211 is multiple periodic dimensions
Respectively 1 micron to 10 microns of silicon dioxide grating structure and/or silica cell structure；Remove remaining described second
Photoresist.
In embodiments of the present invention, first, the second photoresist 209, the second light are coated in the upper surface of silicon dioxide layer 208
209 model GL2000 photoresists of photoresist, thickness is 400 nanometers to 500 nanometers, and toasts 15 minutes at a temperature of 130 DEG C, so
Photoetching is carried out using projection lithography technique afterwards, projection ratio is 1:4, by deep UV exposure, wherein, mask is legal copy,
The graphics field of mask is alternatively non-transparent district, then is developed in NaOH solution, removes the second photoresist of transparent area, Ran Hou
Toasted 15 minutes at a temperature of 130 DEG C, so that the second photoetching offset plate figure structure 210 is formed, wherein, the second photoresist image structure
210 be optical grating construction and/or cell structure that multiple periodic dimensions are respectively 1 micron to 10 microns, finally, uses dry etching
Technique performs etching, and will not removed by the silicon dioxide layer 208 of the second photoresist masking, forms silicon dioxide pattern structure 211,
Wherein, silicon dioxide pattern structure 211 is the silicon dioxide grating structure that multiple periodic dimensions are respectively 1 micron to 10 microns
And/or silica cell structure.In etching technics, etching gas SF6Or C4F8, SF6Primarily serve the effect of etching, C4F8
It has been polymer protective effect, etch rate is set as 15nm/min to 20nm/min.
Step S107, grows metal in the upper surface of the second area for the substrate for having formed the silicon dioxide pattern structure
Layer 106.
(7) and Fig. 3 (8) are please referred to Fig.3, the specific implementation of step S107 is：Forming the silica figure
The upper surface of the substrate 201 of shape structure sputters 10 nanometers to 20 nanometers of metallic chromium layer 212；Remove second protective layer 207,
The silicon dioxide layer 208 of second protective layer, 207 upper surface and the metallic chromium layer 212 of 207 upper surface of the second protective layer.
In embodiments of the present invention, sputtered by sputtering technology in the upper surface of first area and the upper surface of second area
Thickness is 10 nanometers to 20 nanometers of metallic chromium layer 212, and the second protective layer 207 and described second for then removing first area are protected
The silicon dioxide layer 208 and metallic chromium layer 212 of sheath upper surface.In a kind of possible implementation, the second protective layer 207 is
Photoresist, the second protective layer 207, the silicon dioxide layer 208 of 207 upper surface of the second protective layer are removed by photoresist stripping process
Also removed therewith with metallic chromium layer 212.
By the upper surface splash-proofing sputtering metal layers of chrome 206 in second area, on the one hand play the role of protection, prevent it is exposed
Substrate in air is aoxidized, and the grating height or height of grid for causing print change, other hand, for scanning electron
Microscope after the upper surface splash-proofing sputtering metal of second area, ensure that the electric conductivity of print, make the print, it is necessary to print is conductive
It can be suitable for scanning electron microscope.
In embodiments of the present invention, silicon nitride graphic structure can be prepared in first area first, then in second area system
Prepared silicon dioxide graphic structure, alternatively, preparing silicon dioxide pattern structure in second area first, then prepares nitrogen in first area
SiClx graphic structure, does not limit herein.
The embodiment of the present invention is by semiconductor technology by a variety of different cycles sizes, the line-spacing standard sample of photo system of different structure
Make on the same substrate, the line-spacing standard sample of photo for meeting that a variety of measuring instruments use to be produced by time processing technique, and
Cost can be reduced.
Optionally, please refer to Fig.4,401 correspondence position of silicon nitride graphic structure forms first pair in the first area
Fiducial mark note 402.Fig. 5 is refer to, the correspondence position of silicon dioxide pattern structure 501 forms the second alignment in the second area
Mark 502.By the first alignment mark 402 and the second alignment mark 502, facilitate alignment when in use.
In the present embodiment, in etch silicon nitride graphic structure, while the silicon nitride layer in first area etches first
Alignment mark 402, is etched to substrate, is carved in etching silicon dioxide graphic structure, while in the silicon dioxide layer of second area
The second alignment mark 502 is lost, is etched to substrate.
Fig. 6 is refer to, optionally, in the silicon nitride optical grating construction and/or the silicon nitride cell structure, the nitrogen
Width between the width of SiClx layer and two neighboring silicon nitride layer is equal, i.e. the width W1 of silicon nitride layer and two nitrogen in Fig. 6
Width W2 between SiClx layer is equal, and the sum of W1 and W2 are a cycle.
Fig. 7 is refer to, in the silicon dioxide grating structure and/or the silica cell structure, the dioxy
Width between the width of SiClx layer and two neighboring silicon dioxide layer is equal, i.e. the width L1 and two of silicon dioxide layer in Fig. 7
Width L2 between a silicon dioxide layer is equal, and the sum of L1 and L2 are a cycle.
In embodiments of the present invention, substrate is 4 inches of Silicon Wafer, and multiple and different periodic dimensions are prepared on Silicon Wafer
Optical grating construction and/or cell structure, scribing after the completion of prepared by print, multiple square small pieces, each small pieces are divided into by print
Include multiple periodic dimensions identical optical grating construction or cell structure.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although with reference to foregoing reality
Example is applied the present invention is described in detail, it will be understood by those of ordinary skill in the art that：It still can be to foregoing each
Technical solution described in embodiment is modified, or carries out equivalent substitution to which part technical characteristic；And these are changed
Or replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical solution, should all
Within protection scope of the present invention.
Claims (10)
- A kind of 1. preparation method of line-spacing standard sample of photo, it is characterised in that including：Substrate is subjected to the first pretreatment, removes the impurity of the substrate surface；Upper surface grown silicon nitride layer in the first area of the substrate by the described first pretreatment；The silicon nitride layer is etched to the substrate, silicon nitride graphic structure is formed in the first area, wherein, the nitridation Silicon graphics structure is the silicon nitride optical grating construction and/or silicon nitride cell structure of multiple and different periodic dimensions；The substrate is subjected to the second pretreatment, removes the impurity of the substrate surface；Silicon dioxide layer is grown in the upper surface of the second area of the substrate by the described second pretreatment；Wherein, described first Region and the second area are non-overlapping；The silicon dioxide layer is etched to the substrate, silicon dioxide pattern structure is formed in the second area, wherein, it is described Silicon dioxide pattern structure is the silicon dioxide grating structure and/or silica cell structure of multiple and different periodic dimensions；Metal layer is grown in the upper surface of the second area for the substrate for having formed the silicon dioxide pattern structure.
- 2. the preparation method of line-spacing standard sample of photo as claimed in claim 1, it is characterised in that described pre- by described first The upper surface grown silicon nitride layer of the first area of the substrate of processing includes：The first protective layer is formed in the upper surface of the second area of the substrate by the described first pretreatment；By chemical vapour deposition technique 50 nanometers to 100 nanometers are deposited in the upper surface for forming the substrate of first protective layer Silicon nitride layer.
- 3. the preparation method of line-spacing standard sample of photo as claimed in claim 2, it is characterised in that the etching silicon nitride layer To the substrate, silicon nitride graphic structure is formed in the first area, including：The first photoresist is coated in the upper surface of the silicon nitride layer；Photoetching is carried out by e-beam lithography, the first photoetching offset plate figure structure is formed in the first area；By etching technics etching not by the silicon nitride layer of first photoresist masking, the substrate is etched to, is formed multiple Periodic dimensions are 200 nanometers to 500 nanometers of silicon nitride optical grating construction and/or silicon nitride cell structure；Remove remaining first photoresist；Remove first protective layer and the silicon nitride layer of the first protective layer upper surface.
- 4. the preparation method of line-spacing standard sample of photo as claimed in claim 1, it is characterised in that described pre- by described second The upper surface growth silicon dioxide layer of the second area of the substrate of processing includes：The second protective layer is formed in the upper surface of the first area of the substrate by the described second pretreatment；80 nanometers to 120 nanometers of dioxy is grown in the upper surface for forming the substrate of second protective layer by thermal oxidation technology SiClx layer.
- 5. the preparation method of line-spacing standard sample of photo as claimed in claim 4, it is characterised in that the etching silica Layer forms silicon dioxide pattern structure to the substrate, in the second area, including：The second photoresist is coated in the upper surface of the silicon dioxide layer；Photoetching is carried out by projection lithography technique, the second photoetching offset plate figure structure is formed in the second area；By etching technics etching not by the silicon dioxide layer of second photoresist masking, the substrate is etched to, is formed more A periodic dimensions are respectively 1 micron to 10 microns of silicon dioxide grating structure and/or silica cell structure；Remove remaining second photoresist.
- 6. the preparation method of line-spacing standard sample of photo as claimed in claim 5, it is characterised in that described to form the dioxy The upper surface growth metal layer of the second area of the substrate of SiClx graphic structure includes：10 nanometers to 20 nanometers of metallic chromium layer is sputtered in the upper surface for having formed the substrate of the silicon dioxide pattern structure；Remove second protective layer, the silicon dioxide layer of the second protective layer upper surface and the second protective layer upper surface Metallic chromium layer.
- 7. the preparation method of line-spacing standard sample of photo as claimed in claim 1, it is characterised in that described that substrate progress first is pre- Processing includes：The substrate is put into the first cleaning solution that temperature is 80 DEG C to 90 DEG C and is cleaned 10 minutes to 15 minutes；Wherein, it is described First cleaning solution is the mixed solution of distilled water, ammonium hydroxide and hydrogen peroxide, and the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide is 4: 1:1；By the substrate distilled water flushing to neutrality；The substrate is cleaned 2 minutes to 5 minutes in a solution of hydrofluoric acid；By the substrate distilled water flushing to neutrality；The substrate is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, described Two cleaning solutions are the mixed solution of distilled water, hydrochloric acid and hydrogen peroxide, and the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is 4:1: 1；By the substrate distilled water flushing to neutrality；The substrate is dried up with nitrogen.
- 8. the preparation method of line-spacing standard sample of photo as claimed in claim 1, it is characterised in that described that the substrate is carried out the Two pretreatments include：The substrate is put into the first cleaning solution that temperature is 80 DEG C to 90 DEG C and is cleaned 10 minutes to 15 minutes；Wherein, it is described First cleaning solution is the mixed solution of distilled water, ammonium hydroxide and hydrogen peroxide, and the volume ratio of distilled water, ammonium hydroxide and hydrogen peroxide is 4: 1:1；By the substrate distilled water flushing to neutrality；The substrate is cleaned 2 minutes to 5 minutes in a solution of hydrofluoric acid；By the substrate distilled water flushing to neutrality；The substrate is put into temperature to be cleaned 10 minutes to 15 minutes in 80 DEG C to 90 DEG C second cleaning solutions；Wherein, described Two cleaning solutions are the mixed solution of distilled water, hydrochloric acid and hydrogen peroxide, and the volume ratio of distilled water, hydrochloric acid and hydrogen peroxide is 4:1: 1；By the substrate distilled water flushing to neutrality；The substrate is dried up with nitrogen.
- 9. the preparation method of line-spacing standard sample of photo as claimed in claim 1, it is characterised in that the method further includes：The first alignment mark is formed in the silicon nitride graphic structure correspondence position；The second alignment mark is formed in the silicon dioxide pattern structure correspondence position.
- 10. such as the preparation method of claim 1 to 9 any one of them line-spacing standard sample of photo, it is characterised in that in the nitridation In silicon grating structure and/or the silicon nitride cell structure, between the width of the silicon nitride layer and two neighboring silicon nitride layer Width it is equal；In the silicon dioxide grating structure and/or the silica cell structure, the width of the silicon dioxide layer with Width between two neighboring silicon dioxide layer is equal.
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