CN107168010A - The manufacture method of lithography mask version - Google Patents
The manufacture method of lithography mask version Download PDFInfo
- Publication number
- CN107168010A CN107168010A CN201610129786.6A CN201610129786A CN107168010A CN 107168010 A CN107168010 A CN 107168010A CN 201610129786 A CN201610129786 A CN 201610129786A CN 107168010 A CN107168010 A CN 107168010A
- Authority
- CN
- China
- Prior art keywords
- mask
- groove
- layer
- photoresist layer
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A kind of manufacture method of lithography mask version, including：Light-transparent substrate, mask plate and photoresist layer are provided；Processing and development treatment are exposed to photoresist layer, first groove and second groove is formed, the width of the first groove is less than the width of second groove；Form the first mask layer of the full first groove of filling；Form the second mask layer of the full second groove of filling；Remove photoresist layer；Using the first mask layer and the second mask layer as mask etching mask plate until exposing light-transparent substrate surface, in the first mask layer optics auxiliary line mask formed below, in the second mask layer main graphic mask formed below, the width of optics auxiliary line mask is less than the width of main graphic mask；Remove the first mask layer and the second mask layer.The problem of being outwelled present invention, avoiding the mask for defining optics auxiliary line, improves the product yield for the lithography mask version to be formed, and reduces the loss that lithography mask version is reppeared.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of manufacture method of lithography mask version.
Background technology
In IC manufacturing field, photoetching technique is used to pattern from the light comprising circuit-design information
Carve and be transferred on mask plate on wafer (wafer), lithography mask version (mask) therein, also referred to as light
Cut blocks for printing, mask plate or light shield, be a kind of flat board for exposure light with translucency, have thereon
There is at least one geometric figure of light-proofness for exposure light, the geometric figure is design configuration,
It can be achieved selectively to block the light being irradiated on wafer surface photoresist, and the final light in crystal column surface
Corresponding pattern is formed in photoresist.
As device is towards miniaturization miniaturization trend development, in order to increase the design drawing on lithography mask version
Removed on the process window of shape, increase focusing depth, usual lithography mask version with the master for defining design configuration
Outside figure, the one or both sides design optics auxiliary line (Scattering Bar) also in main graphic is described
Optics auxiliary line is flagpole pattern, also, the optics auxiliary line can not be imaged on wafer.
However, the product yield of the photoresist mask plate of prior art manufacture is relatively low, lithography mask version is reppeared
Loss it is larger.
The content of the invention
The problem of present invention is solved is to provide a kind of manufacture method of lithography mask version, improves the photoetching of manufacture
The product yield of mask plate, reduces the loss that lithography mask version is reppeared.
To solve the above problems, the present invention provides a kind of manufacture method of lithography mask version, including：There is provided
Light-transparent substrate and the mask plate positioned at light-transparent substrate top surface, the mask plate top surface are formed with
Photoresist layer；Processing and development treatment are exposed to the photoresist layer, is formed and runs through the photoetching
The first groove and second groove of glue-line, wherein, the width of the first groove is less than second groove
Width；Form the first mask layer of the full first groove of filling；Form the full second groove of filling
Second mask layer；Remove the photoresist layer；Using first mask layer and the second mask layer as mask
The mask plate is etched until exposing light-transparent substrate surface, in the first mask layer optics formed below
Auxiliary line mask, in second mask layer main graphic mask formed below, wherein, the optics is auxiliary
The width of index contour bar mask is less than the width of main graphic mask；Remove first mask layer and the second mask
Layer.
Optionally, forming first mask layer and the processing step of the second mask layer includes：Form filling
The filling mask of the full first groove and second groove, the filling mask is also covered at the top of photoresist layer
Surface；Remove higher than the filling mask at the top of the photoresist layer, first is formed in the first groove
Mask layer, forms the second mask layer in the second groove.
Optionally, the filling is formed using mobility chemical vapor deposition method or spin coating process to cover
Film.
Optionally, using one or both of chemical mechanical milling tech or dry etch process, remove
Higher than the filling mask at the top of the photoresist layer.
Optionally, the material of first mask layer is different from the material of mask plate；Second mask layer
Material it is different from the material of mask plate.
Optionally, the material of first mask layer be silica, silicon nitride, carborundum, silicon oxynitride,
Carbonitride of silicium, carbon silicon oxynitride or boron nitride；The material of second mask layer be silica, silicon nitride,
Carborundum, silicon oxynitride, carbonitride of silicium, carbon silicon oxynitride or boron nitride.
Optionally, the width dimensions of the first groove are 50 nanometers~150 nanometers.
Optionally, the width dimensions of the photoresist layer between the first groove and second groove are received for 200
Rice~600 nanometers.
Optionally, the section pattern of the first groove is square；The first groove is located at second groove
Both sides.
Optionally, the thickness of the photoresist layer is 100 nanometers~300 nanometers.
Optionally, after the first groove and second groove is formed, formed first mask layer and
Before second mask layer, in addition to step：Curing process is carried out to the photoresist layer.
Optionally, the method that the curing process is used is heat treatment or ultraviolet irradiation processing.
Optionally, the material of the photoresist layer is positive photoresist.
Optionally, processing and the processing step of development treatment are exposed to the photoresist layer to be included：
Region where the first groove and second groove is exposure area, and the photoresist layer of exposure area is entered
Row exposure-processed；Then, development treatment is carried out to the photoresist layer, removes the photoresist of exposure area
Layer, forms the first groove and second groove.
Optionally, the material of the photoresist layer is negative photoresist.
Optionally, processing and the processing step of development treatment are exposed to the photoresist layer to be included：
Region where the first groove and second groove is non-exposed areas, to the light outside non-exposed areas
Photoresist layer is exposed processing；Then, development treatment is carried out to the photoresist layer, removes non-exposed area
The photoresist layer in domain, forms the first groove and second groove.
Optionally, removed photoresist using wet method or cineration technics removes the photoresist layer.
Optionally, using dry etch process or wet-etching technology, first mask layer and the are removed
Two mask layers.
Optionally, the material of the mask plate is the nitrogen of chromium, molybdenum silicide, the nitrogen oxides of chromium or molybdenum silicide
One or more in oxide.
Optionally, the material of the light-transparent substrate is quartz material.
Compared with prior art, technical scheme has advantages below：
In the technical scheme of the manufacture method for the lithography mask version that the present invention is provided, photoresist layer is exposed
Light processing and development treatment, form the first groove and second groove through the photoresist layer, its
In, the width of first groove and the width of second groove, first groove are used to define optics auxiliary line
Positions and dimensions, second groove is used to define the positions and dimensions of main graphic；Then, filling is formed full
First mask layer of first groove, forms the second mask layer of the full second groove of filling；Remove photoresist layer,
The technique for removing photoresist layer will not be caused to the position and pattern of the first mask layer and the second mask layer
Influence so that the first mask layer and the position of the second mask layer and pattern keep constant, therefore the present invention is kept away
The problem of the first mask layer for having exempted from definition optics auxiliary line is outwelled；Then, with the first mask layer and
Two mask layers be mask etching mask plate until expose light-transparent substrate surface, it is square under the first mask layer
Into optics auxiliary line mask, in the second mask layer main graphic mask formed below, wherein, optics auxiliary
The width of lines mask is less than the width of main graphic mask.Because the first mask layer and the second mask layer have
Higher position precision and pattern accuracy, the problem of first mask layer will not be outwelled, because
This optics auxiliary line mask being correspondingly formed and main graphic mask will also meet process requirements.To sum up, originally
The product yield for inventing the lithography mask version of manufacture is high, lithography mask version to reppear loss small.
Further, after first groove and second groove is formed, form the first mask layer and the second mask
Before layer, in addition to, curing process is carried out to photoresist layer, the curing process can improve photoresist
The material density and intensity of layer so that be subsequently formed the technical process of the first mask layer and the second mask layer
In, the position of the first groove and second groove and pattern keep constant, are formed so as to further improve
The first mask layer and the second mask layer position precision and pattern accuracy, further improve manufacture
The product yield of lithography mask version.
Brief description of the drawings
The cross-sectional view for the lithography mask version manufacturing process that Fig. 1 to Fig. 4 provides for an embodiment；
Fig. 5 to Figure 13 illustrates for the cross-section structure of lithography mask version manufacturing process provided in an embodiment of the present invention
Figure.
Embodiment
From background technology, the yield of the lithography mask version of prior art manufacture is relatively low, lithography mask version
The loss reppeared is larger.
In one embodiment, formed on lithography mask version the technique of photoetching auxiliary line and main graphic include with
Lower step：
With reference to Fig. 1 there is provided the light-transparent substrate 101 stacked gradually, mask plate 102 and photoresist layer 103,
So that the material of photoresist layer is negative photoresistance (negative PR) material as an example.
With reference to Fig. 2, processing 104, the photoresist layer of exposure area are exposed to the photoresist layer 103
103 material property changes, and the material property of the photoresist layer 103 of non-exposed areas is constant.
With reference to Fig. 3, after processing 104 (referring to Fig. 2) is exposed, to the photoresist layer 103
(referring to Fig. 2) carries out development treatment, removes the photoresist layer 103 of non-exposed areas, forms optics auxiliary
Lines 113 and main graphic 123, wherein, the dimension of picture of optics auxiliary line 113 is less than main graphic
123 dimension of picture, main graphic 123 defines the design configuration needed for semiconductor technology, with main graphic
123 both sides are respectively formed with exemplified by optics secondary graphics 113.
Then, will with the optics auxiliary line 113 and main graphic 123 for mask etching mask plate 102
The figure of optics auxiliary line 113 and the figure of main graphic 123 are transferred in mask plate 102, accordingly
Form optics auxiliary line mask and main graphic mask；Then, the He of optics auxiliary line 113 is removed
Main graphic 123.
However, research is found, after being transferred to due to the figure of optics auxiliary line 113 in mask plate 102,
It is required that the figure of the optics auxiliary line mask in mask plate 102 can not be imaged on wafer, therefore optics
Auxiliary line 113 generally has the width dimensions of very little, the width dimensions and optics auxiliary line 113
Height dimension it is many compared to small so that optics auxiliary line 113 is slice structure, therefore is being shown
During shadow processing 105, the optics auxiliary line 113 is easily outwelled, as shown in figure 4, influence
The quality of the lithography mask version of manufacture, causes the product yield of lithography mask version low.
To solve the above problems, the present invention provides a kind of manufacture method of lithography mask version, there is provided printing opacity base
Bottom and the mask plate positioned at light-transparent substrate top surface, the mask plate top surface are formed with photoresist
Layer；Processing and development treatment are exposed to the photoresist layer, is formed through the photoresist layer
First groove and second groove, wherein, the width of the first groove is less than the width of second groove；
Form the first mask layer of the full first groove of filling, the material of first mask layer and mask plate
Material is different；Form the second mask layer of the full second groove of filling, the material of second mask layer
It is different from the material of mask plate；Remove the photoresist layer；With first mask layer and the second mask
Layer is for mask plate described in mask etching until light-transparent substrate surface is exposed, below first mask layer
Optics auxiliary line mask is formed, in second mask layer main graphic mask formed below, wherein, institute
The width for stating optics auxiliary line mask is less than the width of main graphic mask；Remove first mask layer and
Second mask layer.In the present invention, the first mask layer defines the figure of optics auxiliary line, the second mask layer
The figure of main graphic is defined, and first mask layer is the problem of will not outwell so that the light of formation
The product yield for carving mask plate is high, reduces the loss that lithography mask version is reppeared.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
The cross-section structure for the lithography mask version manufacturing process that Fig. 5 to Figure 13 provides for one embodiment of the invention shows
It is intended to.
With reference to Fig. 5, there is provided light-transparent substrate 201 and the mask plate positioned at the top surface of light-transparent substrate 201
202, the top surface of mask plate 202 is formed with photoresist layer 203.
The light-transparent substrate 201 has in translucency, the present embodiment, with the material of the light-transparent substrate 201
Expect for exemplified by quartz material.In other embodiments, the light-transparent substrate can also have printing opacity for other
The base material of property.
Extended meeting is patterned to the mask plate 202 afterwards, forms main graphic mask and optics boost line
Bar mask, will it is graphical after mask plate 202 be applied in follow-up semiconductor technology processing procedure.
In the present embodiment, the material of the mask plate 202 is metal mask plate material, for example, chromium, silicon
Change the one or more in molybdenum, the nitrogen oxides of chromium or the nitrogen oxides of molybdenum silicide.In a specific embodiment
In, so that the material of the mask plate 202 is chromium as an example.
Extended meeting is exposed processing and development treatment to the photoresist layer 203 afterwards, in photoresist layer 203
The interior second groove for forming the first groove for defining optics auxiliary line and defining main graphic.
The material of the photoresist layer 203 is positive photoresist or negative photoresist.In the present embodiment, institute
The thickness for stating photoresist layer 203 is 100 nanometers~300 nanometers.In other embodiments, additionally it is possible to according to
Process requirements determine the thickness parameter of photoresist layer.
It will be described in detail below so that the material of photoresist layer 203 is positive photoresist as an example.
With reference to Fig. 6, processing 204 is exposed to the photoresist layer 203.
In the present embodiment, the material of the photoresist layer 203 is positive photoresist, follow-up to be formed the
Region where one groove and second groove is exposure area.
Processing is exposed to the photoresist layer 203 of the exposure area so that the photoresist of exposure area
The material property of layer 203 is changed, and the material of the photoresist layer 203 of exposure-processed 204 is not undergone
It can keep constant.
The exposure area of the exposure-processed 204 include define first groove the first exposure area and
Define the second exposure area of second groove, that is to say, that exposure area includes defining optics auxiliary line
The first exposure area and define the second exposure area of main graphic, the size of the first exposure area is small
Size in the second exposure area., can be true according to the positions and dimensions of optics auxiliary line to be formed
The positions and dimensions of fixed first exposure area；, can be true according to the positions and dimensions of main graphic to be formed
The positions and dimensions of fixed second exposure area.
In the present embodiment, so that the optics auxiliary line being subsequently formed is located at main graphic both sides as an example, then accordingly
The first exposure area also be located at the second exposure area both sides.
With reference to Fig. 7, after the exposure-processed 204 (referring to Fig. 6) is carried out, to the photoresist layer
203 carry out development treatment 205, form the first groove 213 and second through the photoresist layer 203
Groove 223.
Specifically, carrying out development treatment to the photoresist layer 203, the photoresist layer of exposure area is removed
203, form the first groove 213 and second groove 223.Because the material of photoresist layer 203 is just
Photoresist, the material of photoresist layer 203 for living through exposure-processed is the material being soluble in developer solution,
And the material of photoresist layer 203 for not undergoing exposure-processed will not dissolve in developer solution, by developer solution
Immersion treatment, the photoresist layer 203 of exposure area is removed.
The section pattern of the first groove 213 is square, and the section pattern of the second groove 223 is
It is square.The width of the first groove 213 is less than the width of second groove 223.In the present embodiment, with
The first groove 213 is located at exemplified by the both sides of second groove 223.
The first groove 213 is used to define optics auxiliary line, its positions and dimensions and optics boost line
The positions and dimensions of bar are identical.The second groove 223 be used for define main graphic, its positions and dimensions with
The positions and dimensions of main graphic are identical.Photoresist between the first groove 213 and second groove 223
The width of layer 203 is more than the width of first groove 213.
In the present embodiment, the width of the first groove 213 is 50 nanometers~150 nanometers, second ditch
The width of groove 223 is 200 nanometers~600 nanometers, between the first groove 213 and second groove 223
Photoresist layer 203 width dimensions be 200 nanometers~600 nanometers.
In other embodiments of the present invention, when the material of the photoresist layer is negative photoresist, to described
Photoresist layer, which is exposed processing and the processing step of development treatment, to be included：The first groove and second
Region where groove is non-exposed areas, and processing is exposed to the photoresist layer outside non-exposed areas,
The material property for living through the photoresist layer of exposure-processed changes, the light for living through exposure-processed
The material of photoresist layer is the material for being insoluble in developer solution, and the material of the photoresist layer of non-exposed areas is readily soluble
The material of liquid developer solution；Then, development treatment is carried out to the photoresist layer, using developer solution to photoetching
Glue-line carries out immersion treatment, removes the photoresist layer of non-exposed areas, forms the first groove and second
Groove.
In the present embodiment, the width of the photoresist layer 203 between first groove 213 and second groove 223
More than the width of first groove 213, in development process, first groove 213 and second groove 223
Between photoresist layer 203 the problem of will not outwell, therefore first groove 213 and second groove 223
Remain to keep higher position precision and pattern accuracy in development process.And in the prior art,
The photoresist layer of first groove region needs to retain in development process, second groove location
The photoresist layer in domain needs to retain in development process, region between first groove and second groove
Photoresist layer needs to remove in development process, because the photoresist layer of first groove region is
Slice structure so that the photoresist layer of first groove region is easily outwelled under the immersion treatment of developer solution.
With reference to Fig. 8, after the first groove 213 and second groove 223 is formed, to the photoresist
Layer 203 carries out curing process 206.
The curing process 206 is suitable to the material density for improving photoresist layer 203, improves photoresist layer
203 strength of materials so that be subsequently formed the work of filling mask, the first mask layer and the second mask layer
During skill, the pattern of the photoresist layer 203 with first groove 213 and second groove 223 is protected
Hold constant, so that ensure that the pattern of first groove 213 and second groove 223 keeps constant, therefore subsequently
The figure that the first mask layer is formed in the first groove 213 is consistent with optics auxiliary line, subsequently the
The figure that the second mask layer is formed in two grooves 223 is consistent with main graphic, improves the photo etched mask of manufacture
The figure accuracy of version.
The method that the curing process 206 is used for heat treatment (thermal process) or ultraviolet irradiation at
Manage (UV process).In one embodiment, the process of thermal treatment parameter includes：Treatment temperature
For 90 degrees Celsius to 110 degrees Celsius, for example, 100 degrees Celsius, handling duration is 20 minutes to 40 points
Clock.In another embodiment, the technological parameter of the ultraviolet irradiation processing includes：The ultraviolet energy of use
Measure as 30 megajoules~50 megajoules.
With reference to Fig. 9, the full first groove 213 (referring to Fig. 8) of filling and the (ginseng of second groove 223 are formed
Examine Fig. 8) filling mask 207, it is described filling mask 207 also cover the top surface of photoresist layer 203.
The material of the filling mask 207 is different from the material of mask plate 202 so that etching technics is to filling out
The material and the material to mask plate 202 for filling mask 207 have higher etching selection ratio.
The material of the filling mask 207 is silica, silicon nitride, carborundum, carbonitride of silicium, carbon nitrogen
Silica or boron nitride.In the present embodiment, the material of the filling mask 207 is silica.
Because the first groove 213 has larger depth-to-width ratio, in order to improve filling mask 207 pair the
The filling capacity of one groove 213, using mobility chemical vapor deposition method or spin coating process shape
Into the filling mask 207.In the present embodiment, described fill out is formed using mobility chemical vapor deposition method
Fill mask 207.
With reference to Figure 10, the filling mask 207 (referring to Fig. 9) higher than the top of photoresist layer 203 is removed,
The first mask layer 217 of the full first groove 213 (referring to Fig. 8) of filling is formed, the full institute of filling is formed
State the second mask layer 227 of second groove 223 (referring to Fig. 8).
The material of first mask layer 217 is different from the material of mask plate 202；Second mask layer
227 material is different from the material of mask plate 202.The material of first mask layer 217 be silica,
Silicon nitride, silicon oxynitride, carborundum, carbonitride of silicium, carbon silicon oxynitride or boron nitride；Described second covers
The material of film layer 227 is silica, silicon nitride, silicon oxynitride, carborundum, carbonitride of silicium, carbon nitrogen oxygen
SiClx or boron nitride.
In the present embodiment, the material of first mask layer 217 is identical with the material of the second mask layer 227,
The material of the mask layer 227 of first mask layer 217 and second is silica.
In one embodiment, using chemical mechanical milling tech, grinding, which is removed, is higher than the photoresist layer
The filling mask 207 at 203 tops.In another embodiment, using dry etch process, etching removes high
Filling mask 207 in the top of photoresist layer 203.In other embodiments, additionally it is possible to first useization
The filling mask that mechanical milling tech grinding removes segment thickness is learned, then using dry etch process, etching
Remove the remaining filling mask higher than at the top of photoresist layer.
First mask layer 217 defines the positions and dimensions of optics auxiliary line, second mask layer
227 define the positions and dimensions of main graphic.
With reference to Figure 11, the photoresist layer 203 (referring to Figure 10) is removed.
Using wet method degumming process or cineration technics, the photoresist layer 203 is removed.
The material that the material density and intensity of first mask layer 217 are more than photoresist layer 203 is fine and close
Degree and intensity；Adhesion between first mask layer 217 and mask plate 202 is more than photoresist layer 203
With the adhesion between mask plate 202.The material density of second mask layer 227 is more than photoresist
The material density and intensity of layer 203；Combination between second mask layer 227 and mask plate 202
Power is more than the adhesion between photoresist layer 203 and mask plate 202.Therefore, the photoresist is being removed
In the technical process of layer 203, the mask layer 227 of the first mask layer 217 and second will not be removed
The harmful effect that the technique of photoresist layer 203 is caused.
In the present embodiment, first mask layer 217 defines the positions and dimensions of optics auxiliary line, institute
The positions and dimensions that the second mask layer 227 defines main graphic are stated, the He of the first mask layer 217 is being formed
During second mask layer 227, will not occur the problem of the first mask layer 217 is outwelled, subsequently can
The figure of the first mask layer 217 is transferred in mask plate 202 well, so as to improve the photoetching of manufacture
The quality of mask plate, reduces the loss that lithography mask version is reppeared, and improves the yield of the lithography mask version of manufacture.
In the prior art, processing and development treatment, the shape in photoresist layer are exposed to photoresist layer
Into optics auxiliary line and main graphic, the development treatment is to be carried out under the immersion treatment of developer solution.By
Smaller in the width of optics auxiliary line, the optics auxiliary line is during the immersion treatment of developer solution
The problem of easily outwelling, causes the product yield of lithography mask version low.
It is described in mask etching with the mask layer 227 of the first mask layer 217 and second with reference to Figure 12
Mask plate 202 (referring to Figure 11) is until expose the surface of light-transparent substrate 201, in first mask layer
217 optics auxiliary line masks 212 formed below, in second mask layer 227 main graphic formed below
Mask 222.
The figure of first mask layer 217 is transferred in mask plate 202, the shape in mask plate 202
Into the optics auxiliary line mask 212 for defining optics auxiliary line；By the figure of second mask layer 227
It is transferred in mask plate 202, the main graphic mask 222 for defining main graphic is formed in mask plate 202.Its
In, the width of the optics auxiliary line mask 212 is less than the width of main graphic mask 222.
The mask plate 202 is etched using dry etch process, the dry etch process is carved for reactive ion
Etching technique or plasma etch process.
With reference to Figure 13, first mask layer 217 (referring to Figure 12) and (ginseng of the second mask layer 227 are removed
Examine Figure 12).
The mask layer 227 of first mask layer 217 and second is removed using wet-etching technology etching, it is described
Wet-etching technology is big to the etch rate of the first mask layer 217 and the second mask layer 227, and to optics
The etch rate of auxiliary line mask 212 and main graphic mask 222 is small.In the present embodiment, described first
The material of mask layer 217 is silica, and the material of second mask layer 227 is silica, and wet method is carved
The etch liquids that etching technique is used is hydrofluoric acid solutions.
In other embodiments, when the material of the first mask layer and the second mask layer is other materials, also
First mask layer and the second mask layer can be removed using suitable etch liquids etching.
The optics auxiliary line mask 212, main graphic mask 222 and light-transparent substrate 201 are constituted and partly led
Lithography mask version needed for body technology processing procedure.First formed in Such analysis, the present embodiment
The problem of mask layer 227 of mask layer 217 and second will not be outwelled, therefore the optics being correspondingly formed
Auxiliary line mask 212 and main graphic mask 222 have higher graphical quality, particularly optics auxiliary
Index contour bar mask 212 has good pattern and higher position precision, so that the light formed
Carve mask plate and meet process requirements, reduce the loss that lithography mask version is reppeared, improve lithography mask version
Product yield.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, it can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (20)
1. a kind of manufacture method of lithography mask version, it is characterised in that including：
Table at the top of light-transparent substrate and the mask plate positioned at light-transparent substrate top surface, the mask plate is provided
Face is formed with photoresist layer；
Processing and development treatment are exposed to the photoresist layer, is formed through the photoresist layer
First groove and second groove, wherein, the width of the first groove is less than the width of second groove；
Form the first mask layer of the full first groove of filling；
Form the second mask layer of the full second groove of filling；
Remove the photoresist layer；
Using first mask layer and the second mask layer described in mask etching mask plate until expose
Light substrate surface, in first mask layer optics auxiliary line mask formed below, is covered described second
Film layer main graphic mask formed below, wherein, the width of the optics auxiliary line mask is less than main graphic
The width of mask；
Remove first mask layer and the second mask layer.
2. manufacture method as claimed in claim 1, it is characterised in that form first mask layer and second
The processing step of mask layer includes：The filling mask of the filling full first groove and second groove is formed,
The filling mask also covers photoresist layer top surface；Remove higher than filling out at the top of the photoresist layer
Mask is filled, the first mask layer is formed in the first groove, second is formed in the second groove
Mask layer.
3. manufacture method as claimed in claim 2, it is characterised in that use mobility chemical vapor deposition work
Skill or spin coating process form the filling mask.
4. manufacture method as claimed in claim 2, it is characterised in that using chemical mechanical milling tech or dry
One or both of method etching technics, is removed higher than the filling mask at the top of the photoresist layer.
5. manufacture method as claimed in claim 1, it is characterised in that the material of first mask layer is with covering
The material of film version is different；The material of second mask layer is different from the material of mask plate.
6. manufacture method as claimed in claim 1, it is characterised in that the material of first mask layer is oxygen
SiClx, silicon nitride, carborundum, silicon oxynitride, carbonitride of silicium, carbon silicon oxynitride or boron nitride；Institute
State the material of the second mask layer for silica, silicon nitride, carborundum, silicon oxynitride, carbonitride of silicium,
Carbon silicon oxynitride or boron nitride.
7. manufacture method as claimed in claim 1, it is characterised in that the width dimensions of the first groove are
50 nanometers~150 nanometers.
8. manufacture method as claimed in claim 1, it is characterised in that the first groove and second groove it
Between photoresist layer width be 200 nanometers~600 nanometers.
9. manufacture method as claimed in claim 1, it is characterised in that the section pattern of the first groove is
It is square；The first groove is located at the both sides of second groove.
10. manufacture method as claimed in claim 1, it is characterised in that the thickness of the photoresist layer is 100
Nanometer~300 nanometers.
11. manufacture method as claimed in claim 1, it is characterised in that forming the first groove and second
After groove, formed before first mask layer and the second mask layer, in addition to step：To described
Photoresist layer carries out curing process.
12. manufacture method as claimed in claim 11, it is characterised in that the method that the curing process is used for
Heat treatment or ultraviolet irradiation processing.
13. manufacture method as claimed in claim 1, it is characterised in that the material of the photoresist layer is positive light
Hinder material.
14. manufacture method as claimed in claim 13, it is characterised in that place is exposed to the photoresist layer
The processing step of reason and development treatment includes：Region where the first groove and second groove is
Exposure area, processing is exposed to the photoresist layer of exposure area；Then, to the photoresist layer
Development treatment is carried out, the photoresist layer of exposure area is removed, the first groove and second groove is formed.
15. manufacture method as claimed in claim 1, it is characterised in that the material of the photoresist layer is negative light
Hinder material.
16. manufacture method as claimed in claim 15, it is characterised in that place is exposed to the photoresist layer
The processing step of reason and development treatment includes：Region where the first groove and second groove is
Non-exposed areas, processing is exposed to the photoresist layer outside non-exposed areas；Then, to described
Photoresist layer carries out development treatment, removes the photoresist layer of non-exposed areas, forms the first groove
And second groove.
17. manufacture method as claimed in claim 1, it is characterised in that removed photoresist using wet method or cineration technics is gone
Except the photoresist layer.
18. manufacture method as claimed in claim 1, it is characterised in that carved using dry etch process or wet method
Etching technique, removes first mask layer and the second mask layer.
19. manufacture method as claimed in claim 1, it is characterised in that the material of the mask plate is chromium, silicon
Change the one or more in molybdenum, the nitrogen oxides of chromium or the nitrogen oxides of molybdenum silicide.
20. manufacture method as claimed in claim 1, it is characterised in that the material of the light-transparent substrate is quartz
Material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610129786.6A CN107168010B (en) | 2016-03-08 | 2016-03-08 | Method for manufacturing photoetching mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610129786.6A CN107168010B (en) | 2016-03-08 | 2016-03-08 | Method for manufacturing photoetching mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107168010A true CN107168010A (en) | 2017-09-15 |
| CN107168010B CN107168010B (en) | 2020-06-09 |
Family
ID=59848802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610129786.6A Active CN107168010B (en) | 2016-03-08 | 2016-03-08 | Method for manufacturing photoetching mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107168010B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110687746A (en) * | 2019-11-12 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | Exposure auxiliary graph, mask plate and manufacturing method of semiconductor device |
| CN112631070A (en) * | 2020-12-23 | 2021-04-09 | 江苏高光半导体材料有限公司 | Method for removing burrs at hole edge on mask |
| CN112882339A (en) * | 2021-01-19 | 2021-06-01 | 泉芯集成电路制造(济南)有限公司 | Mask and preparation method thereof |
| CN112946995A (en) * | 2019-12-10 | 2021-06-11 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for forming semiconductor structure |
| CN115903401A (en) * | 2022-12-22 | 2023-04-04 | 上海铭锟半导体有限公司 | Super-resolution pattern implementation method and device based on etching and double photoetching |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020137361A1 (en) * | 2001-03-20 | 2002-09-26 | Samsung Eletronics Co. Ltd. | Phase shifting mask for manufacturing semiconductor device and method of fabricating the same |
| CN1450596A (en) * | 2002-04-09 | 2003-10-22 | 旺宏电子股份有限公司 | Method for mfg of wire in semiconductor component |
| US20040069745A1 (en) * | 2002-10-10 | 2004-04-15 | Taiwan Semiconductor Manufacturing Company | Method for preventing the etch transfer of sidelobes in contact hole patterns |
| CN1490843A (en) * | 2002-10-18 | 2004-04-21 | 台湾积体电路制造股份有限公司 | Integrated circuit producing method for eliminating sidelobe pattern |
| US20050106493A1 (en) * | 2003-11-17 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co. | Water soluble negative tone photoresist |
| CN1794023A (en) * | 2005-12-29 | 2006-06-28 | 天津大学 | Method of preparing long period bar wave guide optical grating on optical glass surface |
| CN101082768A (en) * | 2006-03-10 | 2007-12-05 | 信越化学工业株式会社 | Photomask blank and photomask making method |
| CN101246816A (en) * | 2007-02-14 | 2008-08-20 | 株式会社瑞萨科技 | Method of fabricating a semiconductor device |
| US20080241707A1 (en) * | 2007-04-02 | 2008-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for exposure of a phase shift mask |
| CN101566789A (en) * | 2008-04-25 | 2009-10-28 | 中芯国际集成电路制造(上海)有限公司 | Mask combination with scattering strip and photoetching method |
| CN103187246A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
-
2016
- 2016-03-08 CN CN201610129786.6A patent/CN107168010B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020137361A1 (en) * | 2001-03-20 | 2002-09-26 | Samsung Eletronics Co. Ltd. | Phase shifting mask for manufacturing semiconductor device and method of fabricating the same |
| CN1450596A (en) * | 2002-04-09 | 2003-10-22 | 旺宏电子股份有限公司 | Method for mfg of wire in semiconductor component |
| US20040069745A1 (en) * | 2002-10-10 | 2004-04-15 | Taiwan Semiconductor Manufacturing Company | Method for preventing the etch transfer of sidelobes in contact hole patterns |
| CN1490843A (en) * | 2002-10-18 | 2004-04-21 | 台湾积体电路制造股份有限公司 | Integrated circuit producing method for eliminating sidelobe pattern |
| US20050106493A1 (en) * | 2003-11-17 | 2005-05-19 | Taiwan Semiconductor Manufacturing Co. | Water soluble negative tone photoresist |
| CN1794023A (en) * | 2005-12-29 | 2006-06-28 | 天津大学 | Method of preparing long period bar wave guide optical grating on optical glass surface |
| CN101082768A (en) * | 2006-03-10 | 2007-12-05 | 信越化学工业株式会社 | Photomask blank and photomask making method |
| CN101246816A (en) * | 2007-02-14 | 2008-08-20 | 株式会社瑞萨科技 | Method of fabricating a semiconductor device |
| US20080241707A1 (en) * | 2007-04-02 | 2008-10-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for exposure of a phase shift mask |
| CN101566789A (en) * | 2008-04-25 | 2009-10-28 | 中芯国际集成电路制造(上海)有限公司 | Mask combination with scattering strip and photoetching method |
| CN103187246A (en) * | 2011-12-31 | 2013-07-03 | 中国科学院微电子研究所 | Manufacturing method for hybrid lines |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110687746A (en) * | 2019-11-12 | 2020-01-14 | 武汉新芯集成电路制造有限公司 | Exposure auxiliary graph, mask plate and manufacturing method of semiconductor device |
| CN110687746B (en) * | 2019-11-12 | 2022-11-18 | 武汉新芯集成电路制造有限公司 | Exposure auxiliary graph, mask plate and manufacturing method of semiconductor device |
| CN112946995A (en) * | 2019-12-10 | 2021-06-11 | 中芯国际集成电路制造(上海)有限公司 | Mask and method for forming semiconductor structure |
| CN112631070A (en) * | 2020-12-23 | 2021-04-09 | 江苏高光半导体材料有限公司 | Method for removing burrs at hole edge on mask |
| CN112882339A (en) * | 2021-01-19 | 2021-06-01 | 泉芯集成电路制造(济南)有限公司 | Mask and preparation method thereof |
| CN115903401A (en) * | 2022-12-22 | 2023-04-04 | 上海铭锟半导体有限公司 | Super-resolution pattern implementation method and device based on etching and double photoetching |
| CN115903401B (en) * | 2022-12-22 | 2024-03-12 | 上海铭锟半导体有限公司 | Super-resolution pattern implementation method and device based on etching and double lithography |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107168010B (en) | 2020-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107168010A (en) | The manufacture method of lithography mask version | |
| CN104701158B (en) | The forming method of self-alignment duplex pattern | |
| US20120009791A1 (en) | Pattern formation method | |
| CN104656370B (en) | Manufacturing method, photomask and the pattern transfer-printing method of photomask | |
| US9069249B2 (en) | Self aligned patterning with multiple resist layers | |
| CN102446703A (en) | Dual patterning method | |
| CN101593744B (en) | Alignment mark and manufacture method thereof | |
| JP5537400B2 (en) | Pattern forming method and apparatus | |
| KR102665789B1 (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
| CN209044299U (en) | Mask plate | |
| CN107799402A (en) | The forming method of secondary figure | |
| JP3975321B2 (en) | Silica glass substrate for photomask and method for planarizing silica glass substrate for photomask | |
| CN107993956A (en) | The preparation method of line-spacing standard sample of photo | |
| US20170153539A1 (en) | Mask blank and mask and fabrication method thereof | |
| CN102446704A (en) | Dual patterning method | |
| US20150253660A1 (en) | Pattern forming method and pattern forming system | |
| US6630408B1 (en) | Self alignment process to fabricate attenuated shifting mask with chrome border | |
| CN111273524B (en) | Process method for realizing accurate alignment | |
| US20070037071A1 (en) | Method for removing defect material of a lithography mask | |
| US20040166447A1 (en) | Method for shrinking pattern photoresist | |
| JP6738941B2 (en) | Mask blank, phase shift mask, and semiconductor device manufacturing method | |
| JP3587712B2 (en) | Alignment mark structure for semiconductor manufacturing with protection dummy pattern | |
| CN107658290A (en) | The method for forming photoetching alignment mark | |
| CN107910293B (en) | Method for improving flatness of photoetching filling material | |
| CN108962727A (en) | The production method of semiconductor structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |