CN106374328A - Medium-infrared fiber laser system covering any wavelength in band between 2 and 10 microns based on soft glass fiber - Google Patents
Medium-infrared fiber laser system covering any wavelength in band between 2 and 10 microns based on soft glass fiber Download PDFInfo
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- CN106374328A CN106374328A CN201611028661.0A CN201611028661A CN106374328A CN 106374328 A CN106374328 A CN 106374328A CN 201611028661 A CN201611028661 A CN 201611028661A CN 106374328 A CN106374328 A CN 106374328A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
- H01S3/067—Fibre lasers
- H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
- H01S3/06716—Fibre compositions or doping with active elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/08013—Resonator comprising a fibre, e.g. for modifying dispersion or repetition rate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
- H01S3/094046—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser of a Raman fibre laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/171—Solid materials amorphous, e.g. glass chalcogenide glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/172—Solid materials amorphous, e.g. glass selenide glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/17—Solid materials amorphous, e.g. glass
- H01S3/177—Solid materials amorphous, e.g. glass telluride glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/30—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects
- H01S3/302—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range using scattering effects, e.g. stimulated Brillouin or Raman effects in an optical fibre
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- Optics & Photonics (AREA)
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- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a medium-infrared fiber laser system covering any wavelength in a band between 2 and 10 microns based on a soft glass fiber. The medium-infrared fiber laser system is characterized in that tellurate, sulphide and selenide soft glass fibers are combined, and laser output at any wavelength in a band between 2 and 10 microns is realized based on the high nonlinear effect of the fibers; and the whole system is composed of five parts, namely, a seed light generation unit, a seed light amplification unit, a tellurite fiber cascaded Raman unit, a sulfide fiber cascaded Raman unit and a selenide fiber cascaded Raman unit. The soft glass fiber on which the system is based has high Raman gain coefficient, large Raman frequency shift and wide Raman gain bandwidth. Medium-infrared laser with output wavelength being 2-10 microns is generated based on the cascaded stimulated Raman process of the fiber. Through further expansion, laser output with output wavelength above 13 microns can be obtained.
Description
Technical field
The invention belongs to optical fiber laser field, it is related specifically to a kind of soft glass optical fiber covering 2-10 mu m waveband that is based on and appoints
The mid-infrared fiber laser system of meaning wavelength.
Background technology
So far, the research of optical fiber laser is concentrated mainly on particularly 1.06 μm of near-infrared and 1.55 mu m wavebands, its
The theoretical limit that output can bear close to material.In recent years, the middle-infrared band optical fiber laser that wavelength is more than 2 μm
Increasingly it is taken seriously.2-10 μm of middle-infrared band laser is in many necks such as biomedicine, national defence, environmental conservation and public safety
Domain tool is widely used.Such as, the 2.8-3.2 μm of the strongest absorption bandses having corresponded to water in tissue, are optimal laser doctors
Learn to do art wave-length coverage.3.0-5.0 μm passes through window for air, and the laser of this wave band can be used for infrared imaging illumination, orientation
Infrared counteraction and atmospheric pollution monitoring etc..The 2.5-10 μm of functional group region for molecule and finger print region, the laser of this wave band can use
In chemical substance identification, drugs detection, the detection of trace hazardous gas and the painless diognose of disease etc..
The laser instrument of middle-infrared band, in addition to optical fiber laser, also semiconductor quantum cascade laser instrument, parametric oscillation
Device, Transition-Metal Ions solid state laser and gas laser etc., each have different advantageous feature.By contrast, mid-infrared
Optical fiber laser has the advantages that high reliability, high brightness, high efficiency, easy heat radiation, easy care and easily realizes coherently combined, more
More to cause the attention of academia and industrial circle.
Mid-infrared fiber laser mainly has the classes such as rare earth ion doped optical fiber laser instrument and Raman fiber lasers at present
Type.The representational er-doped fluoride optical fiber laser and 2.9 having 2.7-2.8 mu m waveband in rare earth ion doped optical fiber laser instrument
Mu m waveband mix holmium fluoride fiber laser instrument etc..The maximum average power of wherein 2.8 μm of erbium doped fiber lasers has reached tens of
Watt magnitude.But, rare earth ion doped optical fiber laser instrument can only cover several corresponding to minority rare earth ion particular level transition
Individual wave band；And, limited by the radiationless relaxation of matrix material of optic fibre phonon, rare earth ion doped optical fiber laser instrument is difficult to realize
Mid-infrared laser more than 5 μm.
The stimulated Raman scattering process based on optical fiber for the Raman fiber lasers produces laser, and its output wavelength is in pumping wave
Single order on the basis of length or multistage Stokes shift, thus optical maser wavelength flexibility and changeability, and wide coverage.Drawn using cascade
Graceful effect and the wide raman gain spectrum of gain media, achievable broadband tunable laser output.In theory, select suitable pumping
Wavelength, can realize laser output in any wave band using stimulated Raman scattering.Raman laser power depends primarily on pumping source work(
Rate, Raman gain and efficiency, the damage threshold of optical fiber and the suppression to other nonlinear effects etc., have very big lifting empty
Between.
The research of Raman fiber laser focuses primarily upon near infrared band at present, has also realized the laser output of kw level,
Become the important optical fiber laser being complementary to one another with rare earth ion doped optical fiber laser instrument.Compared near infrared band, Raman light
Fine light technology is even more important in middle-infrared band, because middle-infrared band leans on the rare earth ion doped laser achieving over 4-5 μm
Output particularly difficult, and middle-infrared band laser wave number little so that under equal Raman frequency shift can achieve wider wavelength model
The laser output enclosed.
Although Raman fiber laser technology is most important in middle-infrared band, and middle-infrared band needs Raman fiber to swash
Light technology provides new output wavelength, but so far, the development of mid-infrared Raman fiber laser is relatively slow, domestic especially such as
This.Not yet it is well solved mainly due to a series of underlying issues round mid-infrared Raman fiber laser technology,
Especially it is the absence of the Raman gain optical fiber with ultra-low loss and ultra-wide transmission range.
In sum, the development of mid-infrared Raman fiber laser technology is relatively delayed.Some well-known sections in the world
Though grinding mechanism to have been achieved with some progress, there are two clearly disadvantageous parts: experiment obtains raman laser wavelength all at 4 μm
Hereinafter, it is essentially blank in more long-wave band；Laser output power is relatively low, and maximum only have several watts of magnitudes.Domestic centering infrared Raman
The research of optical-fiber laser is at the early-stage, there is not yet more influential experimental result report.At present, mid-infrared Raman fiber laser is no
By being compared with mid-infrared rare earth ion doped optical fiber laser, or compared with near-infrared Raman fiber laser, in highest
The aspects such as power, laser output form and tunability all seem backward.
Content of the invention
The present invention is the deficiency solving existing mid-infrared fiber laser output wavelength presence it is proposed that a kind of be based on soft glass
Glass optical fiber covers the mid-infrared fiber laser system of any wavelength of 2-10 mu m waveband.
The present invention solves technical problem, adopts the following technical scheme that
The invention discloses a kind of middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber
Device system it is characterised in that: described mid-infrared fiber laser system is by tellurate optical fiber, chalcogenide fiber and selenizing object light
Fine three kinds of soft glass optical fiber combination, using its high non-linearity effect, realize the laser output of any wavelength of 2-10 mu m waveband；Entirely
System includes seed light generation unit, seed Optical Amplifier Unit, tellurate optical fiber cascades Raman cell, chalcogenide fiber cascade is drawn
Graceful unit and selenides optical fiber cascade five parts of Raman cell；Seed light generation unit adopts ring cavity structure, using 790nm
Diode-end-pumped gain media double clad thulium doped fiber, produces the tune q pulse of wavelength 2 mu m waveband by acousto-optic modulator
Laser；The output light of seed light generation unit enters seed Optical Amplifier Unit, closes bundle pump through multiple 790nm semiconductor lasers
Pu, mean power can be amplified to 100w magnitude；Tellurate optical fiber cascades Raman cell by the use of tellurate optical fiber as gain media,
Join Raman Process through three classes, produce the laser reaching 3.64 μm；Chalcogenide fiber cascade Raman cell is using sulfuration object light
Fibre, as gain media, joins Raman Process through three classes, produces the laser reaching 5.89 μm；Selenides optical fiber cascades Raman list
Unit, by the use of selenides optical fiber as gain media, joins Raman Process through three classes, produces the laser reaching 10.55 μm；Seed
Light generation unit optical wavelength is tunable in 1.90-2.10 μ m, and the corresponding raman laser producing covers mid-infrared 2-10 μm ripple
Section.
Specific:
Described tellurate optical fiber cascade Raman cell, described chalcogenide fiber cascade Raman cell and described selenides optical fiber
Cascade Raman cell is to be carved with reflection one in the two ends near zone of tellurate optical fiber, chalcogenide fiber, selenides optical fiber respectively
The Fiber Bragg Grating FBG of rank Raman Stokes signal to, reflection second order Raman Stokes signal Fiber Bragg Grating FBG
To with the Fiber Bragg Grating FBG pair reflecting three rank Raman Stokes signal；
Described reflection second order Raman Stokes signal Fiber Bragg Grating FBG be pointed to described reflection single order Raman this
The outside of the Fiber Bragg Grating FBG pair of lentor signal, the optical fiber Bragg light of described reflection three rank Raman Stokes signal
Grid are pointed to the outside of the Fiber Bragg Grating FBG pair of described reflection second order Raman Stokes signal；
Described tellurate optic fibre input end is connected with described seed Optical Amplifier Unit, and described seed Optical Amplifier Unit exports 2 μ
M laser enters tellurate optical fiber by first end face coupling unit；The signal light input end of described seed Optical Amplifier Unit and kind
The laser output of sub-light generation unit is connected, and described seed light generation unit is exported 2 μm of flashlights and is coupled into by bundling device
Enter in the double clad thulium doped fiber ii of seed Optical Amplifier Unit；Described tellurate fiber-optic output and chalcogenide fiber input phase
Even, described tellurate fiber-optic output laser enters chalcogenide fiber input by second end face coupling unit；Described sulfuration
Thing fiber-optic output is connected with selenides optic fibre input end, and described chalcogenide fiber outfan laser passes through the 3rd end coupling portion
Divide and enter selenides optic fibre input end.
Described seed light generation unit be by 790nm semiconductor laser i, wavelength division multiplexer, double clad thulium doped fiber i,
Width tunable optic filter, acousto-optic modulator, isolator i and output coupler are connected in turn；Described output coupler one
End is connected with described wavelength division multiplexer, constitutes annular chamber；Described 790nm diode-end-pumped double clad thulium doped fiber i produces
Raw 2 μm of laser, described broad-band tunable filter tuning wavelength scope, the pulse that described acousto-optic modulator adjusts seed light is defeated
Go out, described isolator i limits the direction of light so as to one-way transmission.
Described seed Optical Amplifier Unit includes the first isolator ii, a 790nm semiconductor laser ii, the 2nd 790nm
Semiconductor laser ii, bundling device, double clad thulium doped fiber ii and the second isolator ii；Described seed light generation unit exports 2 μ
M pulse light is passed through described conjunction together with a 790nm semiconductor laser ii, the 2nd 790nm semiconductor laser ii and restraints
Device is coupled in double clad thulium doped fiber ii, 2 μm of pulse signal luminous powers pass through a 790nm semiconductor laser ii, the
The pumping of two 790nm semiconductor laser ii, is amplified in double clad thulium doped fiber ii.
Described reflection single order Raman Stokes signal Bragg grating to, described reflection second order Raman Stokes letter
Number Fiber Bragg Grating FBG to described reflection three rank Raman Stokes signal Fiber Bragg Grating FBG pair, be utilize
800nm femtosecond pulse laser adds double beam interferometry and is directly scribed at described tellurate optical fiber, chalcogenide fiber and selenides
On optical fiber；Described reflection single order Raman Stokes signal Bragg grating to, described reflection second order Raman Stokes letter
Number Fiber Bragg Grating FBG to described reflection three rank Raman Stokes signal Fiber Bragg Grating FBG pair reflection in
Cardiac wave length corresponds respectively to single order, second order and three rank Raman Stokes signal wavelength.Reflect three rank Raman Stokes signal
Fiber Bragg Grating FBG pair, as high reflection mirror, another grating is as output coupling cavity mirror for one of grating.
The core size of described tellurate optical fiber, chalcogenide fiber and selenides optical fiber respectively with 2-3.64 μm, 3.64-
5.89 μm of single mode mould fields with 5.89-10 mu m waveband match.
Described sound-optical controller adjusts the pulse width of 2 μm of seed light in 10-100ns, described broad-band tunable filter
Tuning wavelength scope is at 1.90-2.10 μm.
Described tellurate optical fiber, chalcogenide fiber and selenides optical fiber are fixed on water-cooled near the position of end coupling part
In V-shaped groove, the mid portion of described tellurate optical fiber, chalcogenide fiber and selenides optical fiber is soaked in water.
Compared with the prior art, beneficial effects of the present invention are embodied in:
1st, the present invention can achieve the laser output of arbitrarily wavelength in 2-10 μm of middle-infrared band, further expands, exportable
Wavelength reaches 13 μm of laser.
2nd, the present invention using have high-purity, high damage threshold, high non-linearity, big Raman frequency shift, wide gain bandwidth, wide thoroughly
Cross wave-length coverage, the tellurate of ultra-low loss, arsenic sulfide and three kinds of soft glass optical fiber of arsenic selenide: Raman frequency shift is respectively 750cm-1、350cm-1And 250cm-1；It is respectively 0.5-4 μm, 0.8-6 μm and 1.0-11.0 μm through wave-length coverage；Loss factor is respectively
For < 0.2db/m, < 0.5db/m and < 0.5db/m.Using tellurate optical fiber, arsenic sulfide optical fiber and arsenic selenide optical fiber is at 2-10 μm
Wave band all has zero-dispersion wavelength.
3rd, the Ramar laser of the present invention is excited to draw by three ranks of tellurate optical fiber, arsenic sulfide optical fiber and arsenic selenide optical fiber
Graceful scattering process, can make Raman fiber lasers output wavelength expand to the whole 2-10 mu m waveband of covering.
4th, the present invention adds double beam interferometry directly in tellurate optical fiber, arsenic sulfide using 800nm femtosecond pulse laser
Fiber Bragg Grating on optical fiber and arsenic selenide optical fiber, forms resonator cavity.The light sensitive effect being produced based on femtosecond pulse, need not be to tellurium
Hydrochlorate optical fiber, chalcogenide fiber and selenides optical fiber carry out carrying the pretreatment such as hydrogen, and the pulse of 800nm wavelength can penetrate mid-infrared
Optical fiber coating enters covering and fibre core, need not remove coat, improves the resistant to mechanical damage energy of Fiber Bragg Grating FBG finished product
Power, improves the reliability of laser system.
5th, the present invention, in order to realize 2-10 μ m wavelength range all standing, needs each rank Raman to raman pump light and generation
Stokes signal light is tuned.Output wavelength can be tuned, averagely by broad-band tunable filter in 1.90-2.10 μm
Power is 50-100mw, and repetition rate is that 10-100khz is adjustable.Pulse width passes through to control the acousto-optic modulator drive signal can be
Adjust in 10-100ns.Seed through 2 μm of pulse thulium-doped fiber laser outputs, optically coupling to 2 μm of thulium doped fiber amplifiers, is put down
All power can be amplified to 100w magnitude.
Brief description
Fig. 1 is that the present invention covers the mid-infrared fiber laser system of any wavelength of 2-10 mu m waveband based on soft glass optical fiber
Structural representation (have reflection single order, second order and three rank Raman Stokes signal optical fiber Bragg to).
Fig. 2 is the single order of soft glass optical fiber used in the present invention, second order and three rank Raman frequency shift schematic diagrams.
In figure label: i is seed light generation unit；Ii is seed Optical Amplifier Unit；Iii cascades Raman for tellurate optical fiber
Unit；Iv cascades Raman cell for chalcogenide fiber；V cascades Raman cell for selenides optical fiber；1 is semiconductor laser i；2
For wavelength division multiplexer；3 is double clad thulium doped fiber i；4 is broad-band tunable filter；5 is acousto-optic modulator；6 is isolator i；
7 is output coupler；8 is the first isolator ii；9 is a 790nm semiconductor laser ii；10 is the 2nd 790nm quasiconductor
Laser instrument ii；11 is bundling device；12 is double clad thulium doped fiber ii；13 is the second isolator ii；14 is first end face coupling part
Point；15 is tellurate optical fiber；16 is the Fiber Bragg Grating FBG pair of the reflection single order Raman Stokes signal of tellurate optical fiber；
17 is the Fiber Bragg Grating FBG pair of the reflection second order Raman Stokes signal of tellurate optical fiber；18 is the anti-of tellurate optical fiber
Penetrate the Fiber Bragg Grating FBG pair of three rank Raman Stokes signal；19 is second end face coupling unit；20 is chalcogenide fiber；
21 is the Fiber Bragg Grating FBG pair of the reflection single order Raman Stokes signal of chalcogenide fiber；22 is the anti-of chalcogenide fiber
Penetrate the Fiber Bragg Grating FBG pair of second order Raman Stokes signal；23 is the reflection three rank Raman Stokes of chalcogenide fiber
The Fiber Bragg Grating FBG pair of signal；24 is the 3rd end coupling part；25 is selenides optical fiber；26 is the anti-of selenides optical fiber
Penetrate the Fiber Bragg Grating FBG pair of single order Raman Stokes signal；27 is the reflection second order Raman Stokes of selenides optical fiber
The Fiber Bragg Grating FBG pair of signal；28 is the optical fiber Bragg light of the reflection three rank Raman Stokes signal of selenides optical fiber
Grid pair.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, technical scheme is described further.
As shown in figure 1, the Raman fiber laser based on the covering mid-infrared 2-10 mu m waveband of soft glass optical fiber for the present embodiment
Device system, including seed light generation unit i, seed Optical Amplifier Unit ii, tellurate optical fiber cascade Raman cell iii, sulfide
Optical fiber cascade Raman cell iv and selenides optical fiber cascade five parts of Raman cell v.
Wherein: seed light generation unit i is to mix thulium light by 790nm semiconductor laser i 1, wavelength division multiplexer 2, double clad
Fine i 3, width tunable optic filter 4, acousto-optic modulator 5, isolator i6 and output coupler 7 are connected in turn；Output coupling
Clutch 7 one end is connected with wavelength division multiplexer 2, constitutes annular chamber.Seed light generation unit i passes through 790nm semiconductor laser 1 pump
Pu double clad thulium doped fiber 3 produces 2 μm of laser, produces the tune q pulse laser of wavelength 2 mu m waveband by acousto-optic modulator 5.It is defeated
Go out wavelength to tune in 1.90-2.10 μm by broad-band tunable filter 4, mean power is 50-100mw, repetition rate
Adjustable for 10-100khz；Pulse width is passed through to control acousto-optic modulator drive signal can adjust in 10-100ns.
Seed Optical Amplifier Unit ii includes the first isolator ii 8, the second isolator ii 13, and a 790nm quasiconductor swashs
Light device ii 9, the 2nd 790nm semiconductor laser ii 10, bundling device 11 and double clad thulium doped fiber ii 12；Seed light produces
Unit exports 2 μm of pulse lights and two high power 790nm semiconductor laser (790nm semiconductor laser ii 9
With the 2nd 790nm semiconductor laser ii 10) double clad thulium doped fiber ii is coupled into by bundling device 11 together with output light
In 12, two high power 790nm semiconductor lasers export 790nm high power laser light 2 μm of pumping in double clad thulium doped fiber
Pulse light, 2 μm of pulse lights are amplified, and mean power can be amplified to 100w magnitude.
Tellurate optical fiber cascade Raman cell iii, chalcogenide fiber cascade Raman cell iv and the cascade of selenides optical fiber are drawn
Graceful unit v is to be carved with reflection one in the two ends near zone of tellurate optical fiber 15, chalcogenide fiber 20, selenides optical fiber 25 respectively
The Fiber Bragg Grating FBG of rank Raman Stokes signal is to (the reflection single order Raman Stokes of respectively tellurate optical fiber is believed
Number Fiber Bragg Grating FBG to 16, chalcogenide fiber reflection single order Raman Stokes signal Fiber Bragg Grating FBG pair
21st, the Fiber Bragg Grating FBG of the reflection single order Raman Stokes signal of selenides optical fiber is to 26), this support of reflection second order Raman
The Fiber Bragg Grating FBG of gram this signal is to (the optical fiber cloth of the respectively reflection second order Raman Stokes signal of tellurate optical fiber
The Fiber Bragg Grating FBG of the reflection second order Raman Stokes signal to 17, chalcogenide fiber for the glug grating is to 22, selenides
The Fiber Bragg Grating FBG of the reflection second order Raman Stokes signal of optical fiber is to 27), reflection three rank Raman Stokes signal
Fiber Bragg Grating FBG to (point than for tellurate optical fiber reflection three rank Raman Stokes signal Fiber Bragg Grating FBG
Anti- to 23, selenides optical fiber to the Fiber Bragg Grating FBG of the reflection three rank Raman Stokes signal of 18, chalcogenide fiber
Penetrate the Fiber Bragg Grating FBG of three rank Raman Stokes signal to 28).The optical fiber cloth of reflection second order Raman Stokes signal
Glug grating be pointed to reflect single order Raman Stokes signal Fiber Bragg Grating FBG pair outside, reflection three rank Ramans this
The Fiber Bragg Grating FBG of lentor signal is pointed to reflect the Fiber Bragg Grating FBG pair of second order Raman Stokes signal
Outside.
Each rank Bragg grating to all using 800nm femtosecond pulse laser add double beam interferometry inscribe.Based on femtosecond
During the light sensitive effect of pulses generation, need not carry out to middle infrared optical fiber carrying the pretreatment such as hydrogen, and the pulse of 800nm wavelength can penetrate
Infrared optical fiber coat enters covering and fibre core, need not remove coat, and the resistance to mechanical improving Fiber Bragg Grating FBG finished product is damaged
Hinder ability, improve the reliability of laser system.
Tellurate optical fiber 15 input is connected with seed Optical Amplifier Unit ii, and seed Optical Amplifier Unit ii exports 2 μm of laser
Tellurate optical fiber 15 is entered by first end face coupling unit 14；The signal light input end of seed Optical Amplifier Unit ii and seed light
The laser output of generation unit i is connected, and seed light generation unit i exports 2 μm of flashlights and is coupled into kind by bundling device 11
In the double clad thulium doped fiber ii 12 of sub-light amplifying unit ii；Tellurate optical fiber 15 outfan and chalcogenide fiber 20 input
It is connected, tellurate optical fiber 15 outfan laser enters chalcogenide fiber 20 input by second end face coupling unit 19；Sulfuration
Object light fibre 20 outfans are connected with selenides optical fiber 25 input, and chalcogenide fiber 20 outfan laser passes through the 3rd end coupling
Part 24 enters selenides optical fiber 25 input.
Enter tellurate optical fiber cascade Raman from 2 μm of pulsed lights of seed Optical Amplifier Unit ii output as raman pump source
Part iii, tellurate optical fiber 15 3 rank Raman scattering laser (wavelength is 3.64 μm) enters chalcogenide fiber level as pumping source
Connection Raman part iv, chalcogenide fiber three rank Raman scattering laser (wavelength is 5.89 μm) enters selenides optical fiber as pumping source
Cascade Raman part v, finally realizes for optical maser wavelength expanding to 10.55 μm.Tellurate optical fiber 15, chalcogenide fiber 20 and selenizing
The core size single mode mould field with 2-3.64 μm, 3.64-5.89 μm and 5.89-10 mu m waveband respectively of object light 25 3 kinds of optical fiber of fibre
Match, make Light Energy concentrate on fibre core and participate in Raman scattering processes, improve lasing efficiency.
As gain media, Raman frequency shift is 750cm to tellurate optical fiber 15-1, join Raman Process through three classes, produce
3.64 μm of stokes light.The Fiber Bragg Grating FBG of the reflection single order Raman Stokes signal of tellurate optical fiber to 16,
The reflection three to 17 and tellurate optical fiber for the Fiber Bragg Grating FBG of the reflection second order Raman Stokes signal of tellurate optical fiber
The Fiber Bragg Grating FBG of the Fiber Bragg Grating FBG pair of rank Raman Stokes signal is right respectively to 18 reflection kernel wavelength
Should be in single order, second order and three rank Raman Stokes signal wavelength, respectively 2.35 μm, 2.86 μm and 3.64 μm.
As gain media, Raman frequency shift is 350cm to chalcogenide fiber 20-1, join Raman Process through three classes, produce
5.89 μm of stokes light.The Fiber Bragg Grating FBG of the reflection single order Raman Stokes signal of chalcogenide fiber to 21,
The reflection three to 22 and chalcogenide fiber for the Fiber Bragg Grating FBG of the reflection second order Raman Stokes signal of chalcogenide fiber
The Fiber Bragg Grating FBG of rank Raman Stokes signal corresponds respectively to single order, second order and three ranks to 23 reflection kernel wavelength
Raman Stokes signal wavelength, respectively 4.17 μm, 4.88 μm and 5.89 μm.
As gain media, Raman frequency shift is 250cm to selenides optical fiber 25-1, join Raman Process through three classes, produce
10.55 μm stokes light.The Fiber Bragg Grating FBG of the reflection single order Raman Stokes signal of selenides optical fiber to 26,
The reflection three to 27 and selenides optical fiber for the Fiber Bragg Grating FBG of the reflection second order Raman Stokes signal of selenides optical fiber
The Fiber Bragg Grating FBG of rank Raman Stokes signal corresponds respectively to single order, second order and three ranks to 28 reflection kernel wavelength
Raman Stokes signal wavelength, respectively 6.91 μm, 8.35 μm and 10.55 μm.
Tellurate optical fiber 15, chalcogenide fiber 20 and selenides optical fiber 25 reflect the optical fiber of each rank Raman Stokes signal
Bragg grating, to the resonator cavity respectively constituting the first to three rank raman lasers, reflects single order and second order Raman Stokes signal
Fiber Bragg Grating FBG to being all high reflectance, reflectance is all higher than～95%, has wide reflection bandwidth (～10nm)；Instead
Penetrate the Fiber Bragg Grating FBG pair of three rank Raman Stokes signal, one of grating as input hysteroscope, respectively in 3.64 μ
M, 5.89 μm and 10.55 μm nearby have～reflection bandwidth of 10nm, reflectance is more than～95%, and another grating is as output
Hysteroscope, has～the reflection bandwidth of 1nm, reflectance is according to output respectively near 3.64 μm, 5.89 μm and 10.55 μm
Needs are selected, and can be～70-90%.
Laser in order to obtain any wavelength in 2-10 μ m exports, and needs to carry out wavelength tuning.As shown in table 1, lead to
Cross broad-band tunable filter 4 output wavelength to tune in 1.90-2.10 μ m, corresponding tellurate optical fiber one,
Two and three rank Raman Stokes signal wave-length coverages are respectively 2.22-2.49 μm, 2.66-3.06 μm and 3.32-3.97 μm；Phase
The one of corresponding chalcogenide fiber, two and three rank Raman Stokes signal wave-length coverage is respectively 3.76-4.61 μm, 4.33-
5.50 μm and 5.51-6.81 μm；One, two and three rank Raman Stokes signal wave-length coverages of corresponding selenides optical fiber are divided
Wei 5.85-8.21 μm, 6.85-10.33 μm and 8.27-13.93 μm.Each rank Raman peak values wavelength of tellurate optical fiber can not cover
The maximum region of lid is 2.49-2.66 μm of (～257cm-1) and 3.06-3.32 μm of (～256cm-1).Due to tellurate optical fiber 15
Raman gain width more than 300cm-1, each rank Raman peak values therefore leading to reference to seed light generation unit i wavelength tuning put down
Move the Raman gain spectrum width with tellurate optical fiber, the wave-length coverage of 2.49-2.66 μm and 3.06-3.32 μm can be covered；And then tie
Close the cascade Raman Process of chalcogenide fiber and selenides optical fiber, wavelength all standing in achievable 2-10 μ m.
In order to realize wide wavelength, the output of high efficiency laser, for high power middle-infrared band cascade Raman fiber lasers
For, need trace impurity, optical fiber are coupled the heat deposition problem in end face and solves, propose thermal management scheme: near coupling
One section of tellurate optical fiber 15 of conjunction part, chalcogenide fiber 20 and selenides optical fiber 25 are fixed in water-cooled V-shaped groove, and tellurate
Optical fiber 15, chalcogenide fiber 20 and selenides optical fiber 25 mid portion are directly soaked in water or are fixed on the cooling plate or be wound on
On cooling column.
The present invention covers the mid-infrared fiber laser system of any wavelength of 2-10 mu m waveband based on soft glass optical fiber, can be real
The raman laser output of existing mid-infrared 2-10 mu m waveband, expands the laser output that can obtain output wavelength more than 13 μm further.
Table 1
Claims (7)
1. based on soft glass optical fiber cover any wavelength of 2-10 mu m waveband mid-infrared fiber laser system it is characterised in that:
Described mid-infrared fiber laser system is by tellurate optical fiber, chalcogenide fiber and three kinds of soft glass light of selenides optical fiber
Fine combination, using its high non-linearity effect, realizes the laser output of any wavelength of 2-10 mu m waveband；
Described mid-infrared fiber laser system includes seed light generation unit (i), seed Optical Amplifier Unit (ii), tellurate light
Fine cascade Raman cell (iii), chalcogenide fiber cascade Raman cell (iv) and selenides optical fiber cascade Raman cell (v) five
Part；
Described tellurate optical fiber cascade Raman cell (iii), described chalcogenide fiber cascade Raman cell (iv) and described selenizing
Object light fine cascade Raman cell (v) be respectively tellurate optical fiber (15), chalcogenide fiber (20), selenides optical fiber (25) two
End near zone be carved with reflection single order Raman Stokes signal Fiber Bragg Grating FBG to, reflection second order Raman Stokes
The Fiber Bragg Grating FBG of signal to the Fiber Bragg Grating FBG pair reflecting three rank Raman Stokes signal；
The Fiber Bragg Grating FBG of described reflection second order Raman Stokes signal is pointed to described reflection single order Raman stoke
The outside of the Fiber Bragg Grating FBG pair of this signal, the Fiber Bragg Grating FBG pair of described reflection three rank Raman Stokes signal
Outside positioned at the Fiber Bragg Grating FBG pair of described reflection second order Raman Stokes signal；
Described tellurate optical fiber (15) input is connected with described seed Optical Amplifier Unit (ii), described seed Optical Amplifier Unit
(ii) 2 μm of laser of output enter tellurate optical fiber (15) by first end face coupling unit (14)；Described seed Optical Amplifier Unit
(ii) signal light input end is connected with the laser output of seed light generation unit (i), and described seed light generation unit (i) is defeated
Go out 2 μm of flashlights to be coupled in double clad thulium doped fiber ii (12) of seed Optical Amplifier Unit (ii) by bundling device (11)；
Described tellurate optical fiber (15) outfan is connected with chalcogenide fiber (20) input, and described tellurate optical fiber (15) outfan swashs
Light enters chalcogenide fiber (20) input by second end face coupling unit (19)；Described chalcogenide fiber (20) outfan with
Selenides optical fiber (25) input is connected, and described chalcogenide fiber (20) outfan laser passes through the 3rd end coupling part (24)
Enter selenides optical fiber (25) input.
2. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 1
Device system it is characterised in that: described seed light generation unit (i) is by 790nm semiconductor laser i (1), wavelength division multiplexer
(2), double clad thulium doped fiber i (3), width tunable optic filter (4), acousto-optic modulator (5), isolator i (6) and output coupling
Device (7) is connected in turn；Described output coupler (7) one end is connected with described wavelength division multiplexer (2), constitutes annular chamber；Institute
State 790nm semiconductor laser (1) pumping double clad thulium doped fiber i (3) and produce 2 μm of laser, described broad-band tunable filter
(4) tuning wavelength scope, described acousto-optic modulator (5) adjusts the pulse output of seed light, and described isolator i (6) limits light
Direction is so as to Unidirectional.
3. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 1
Device system it is characterised in that: described seed Optical Amplifier Unit (ii) includes the first isolator ii (8), a 790nm quasiconductor swashs
Light device ii (9), the 2nd 790nm semiconductor laser ii (10), bundling device (11), double clad thulium doped fiber ii (12) and second every
From device ii (13)；
Described seed light generation unit (i) export 2 μm of pulse lights and 790nm semiconductor laser ii (9), second
790nm semiconductor laser ii (10) is coupled in double clad thulium doped fiber ii (12) by described bundling device (11) together, and 2
μm pulse signal luminous power passes through 790nm semiconductor laser ii (9), the 2nd 790nm semiconductor laser ii (10)
Pumping, is amplified in double clad thulium doped fiber ii (12).
4. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 1
Device system it is characterised in that: described reflection single order Raman Stokes signal Bragg grating to, described reflection second order Raman
The Fiber Bragg Grating FBG of Stokes signal is to the Fiber Bragg Grating FBG with described reflection three rank Raman Stokes signal
Right, it is to add double beam interferometry using 800nm femtosecond pulse laser to be directly scribed at described tellurate optical fiber (15), sulfide
On optical fiber (20) and selenides optical fiber (25)；
The Bragg grating of described reflection single order Raman Stokes signal is to, described reflection second order Raman Stokes signal
Fiber Bragg Grating FBG is to the reflection kernel ripple with the Fiber Bragg Grating FBG pair of described reflection three rank Raman Stokes signal
Length corresponds respectively to single order, second order and three rank Raman Stokes signal wavelength.
5. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 1
Device system it is characterised in that: the core size of described tellurate optical fiber (15), chalcogenide fiber (20) and selenides optical fiber (25)
Match with the single mode mould field of 2-3.64 μm, 3.64-5.89 μm and 5.89-10 mu m waveband respectively.
6. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 2
Device system it is characterised in that: described sound-optical controller (5) adjusts the pulse width of 2 μm of seed light in 10-100ns, described broadband
Tunable optic filter (4) tuning wavelength scope is at 1.90-2.10 μm.
7. the middle infrared optical fiber laser covering any wavelength of 2-10 mu m waveband based on soft glass optical fiber according to claim 1
Device system it is characterised in that: described tellurate optical fiber (15), chalcogenide fiber (20) and selenides optical fiber (25) are near end face coupling
The position of conjunction part is fixed in water-cooled V-shaped groove, described tellurate optical fiber (15), chalcogenide fiber (20) and selenides optical fiber
(25) mid portion is soaked in water.
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| CN112803233A (en) * | 2020-12-31 | 2021-05-14 | 厦门大学 | Medium infrared laser generation method based on multi-order diamond Raman and tunable medium infrared laser |
| CN113783092A (en) * | 2021-09-16 | 2021-12-10 | 安徽光智科技有限公司 | Picosecond seed laser based on annular cavity structure |
| CN114512890A (en) * | 2022-02-21 | 2022-05-17 | 山东飞博赛斯光电科技有限公司 | Wide tuning single-frequency light source of new communication wave band |
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| CN116544761A (en) * | 2023-07-06 | 2023-08-04 | 广东省新兴激光等离子体技术研究院 | System for producing compressible coherent Raman pulse fiber laser |
| CN116544761B (en) * | 2023-07-06 | 2023-09-22 | 广东省新兴激光等离子体技术研究院 | System for producing compressible coherent Raman pulse fiber laser |
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