CN105630700B - A kind of storage system and reading/writing method with secondary cache structure - Google Patents
A kind of storage system and reading/writing method with secondary cache structure Download PDFInfo
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Abstract
The present invention provides a kind of storage system with secondary cache structure, including host memory and solid state hard disk, and solid state hard disk includes main control chip, NAND chip and MRAM, and host memory includes read buffer, and MRAM includes write buffer.The present invention also provides the reading/writing methods using the storage system with secondary cache structure.Secondary cache structure provided by the invention and the reading/writing method for using the secondary cache structure, first read operation performance are more preferable；Secondly it uses MRAM as write buffer, while guaranteeing that data are safe under unexpected power blackout situation, also substantially increases the speed of data write-in；Use the read buffer in host memory, so that it may so that the limited space MRAM is used as write buffer as much as possible, so that Optimum cost, saves expensive circuit breaking protective system；Use MRAM to write number as what write buffer also reduced NAND, play the role of protecting it and prolongs the service life；This is the good scheme of cost effectiveness.
Description
Technical field
The present invention relates to solid state hard disk more particularly to a kind of storage systems and reading/writing method with secondary cache structure.
Background technique
Currently, the development of nand flash memory technology has pushed SSD industry.As shown in Figure 1, using high speed between SSD and host
Serial line interface such as SATA, PICe etc. technologies.Inside is by one group of NAND chip for storing data, for supporting to calculate and cache
The DDR DRAM (memory) of data and main control chip (SSD Controller) composition.It sometimes also needs to power off guarantor
Protecting system.
NAND is a kind of storage equipment of monolith read-write, and the unit that minimum readable takes is minimum erasable page (page)
Unit is often made of many pages block (block), a block, and the page of the inside can carry out that behaviour is individually written after block erasing
Make.Write operation is very slow, more much slower than reading, and erasing operation is more much slower than being written.
As shown in Fig. 2, the file operation mode of mobile phone and computer is as follows:
(1) application software is issued to operating system opens, closes, reading and writing file instruction；
(2) instruction morphing instruction for reading and writing memory block of the file system portion in operating system reading and writing file；
(3) NAND driving receives the instruction in read-write memory block area with management software, the optimization such as is cached, writes equilibrium, to
Chip, which issues, reads page, writes the instruction such as block.
In mobile phone, NAND driving and management software are usually as the software module being closely related with operating system, in master
The operation of machine core on piece；In a computer, NAND driving is usually run on the main control chip of solid state hard disk with management software.
One problem of nand flash memory is that NAND has the limited service life.Each page of the inside passes through the wiping of certain number
After writing, will permanent failure cannot be used continuously.The current trend of industry development is that the capacity of NAND and packing density increase
It is very fast, but to reduce the service life as cost.Erasable number is reduced to current 3000 times or so from initial 100,000 times.
Since the read or write speed ratio DRAM of NAND is much slower, the caching of reading and writing can also be made using a part of dram space
(Cache), the performance of entire SSD is improved.However it introduces write buffer and produces new problem: once it powers off, DRAM cache
In the content of NAND is not yet written can lose, cause the damage of the even entire file system of system loss data.So must be same
When use expensive, bulky circuit breaking protective system (being generally made of battery or a large amount of capacitor).And logical-physical
Address translation table, after powering off, what the data being available in NAND reconfigured, although time consuming.
It is encountered from the design described above that can be seen that SSD awkward: if without using write buffer, the write-in of product
It can have a greatly reduced quality；If using write buffer, it is necessary to while using the expensive power-off protection equipment for accounting for volume again, cause cost effectiveness very
Difference.
MRAM is a kind of new memory and memory technology, can as SRAM/DRAM quick random read-write, can also picture
The same reservation data permanent after a loss of power of Flash flash memory.The economy of MRAM is fairly good, the silicon area ratio that unit capacity occupies
SRAM has very big advantage, and the NOR Flash than being commonly used in such chip is also advantageous, than embedded NOR Flash
Advantage it is bigger.The performance of MRAM is also fairly good, and read-write time delay is close to best SRAM, and power consumption is then in various memories and storage skill
Art is best.And MRAM is incompatible with standard CMOS semiconductor technique unlike DRAM and Flash.MRAM can and logic
Circuit integration is into a chip.
Operating speed keeps the MRAM of content to be used as read-write cache fastly and after powering off can solve this problem, and one kind is mixed
Close use DRAM and MRAM solid state hard disk, as shown in figure 3, using only MRAM solid state hard disk, as shown in figure 4, due to
MRAM can as Flash flash memory permanent reservation data after a loss of power, can be without using expensive, bulky power-off protection
System, thus reduce the cost of solid state hard disk.
But in the following significant period of time, MRAM can it is more expensive than DRAM very much.Equally can significantly it be increased using a large amount of MRAM
Add the cost of product.
In order to improve overall performance, reads and write and require to cache；And the maximum value of MRAM is to be used as write buffer, caching
Bigger, properties of product are better, it is therefore desirable to find the high caching method of a cost effectiveness.
Therefore, those skilled in the art is dedicated to developing a kind of buffer structure that cost effectiveness is high, can either guarantee to read and write
Performance, and enable to Optimum cost.
Summary of the invention
In view of the above drawbacks of the prior art, it is slow with second level that technical problem to be solved by the invention is to provide one kind
The storage system of structure is deposited, can either guarantee read operation performance, and can guarantee that data are safe under unexpected power blackout situation
The speed of data write-in is substantially increased simultaneously；It can also make Optimum cost.
The present invention also provides the reading methods and write method using the storage system with secondary cache structure of the invention.
The present invention provides a kind of storage system, including host memory and solid state hard disk, solid state hard disk include main control chip,
NAND chip and MRAM, host memory include read buffer, and MRAM includes write buffer.
Storage system provided by the invention, first host memory include read buffer, can guarantee good read operation performance,
Since the speed of solid hard disk interface is usually slower than host memory interface rate, used using the read buffer ratio in host memory solid
Read buffer in the DRAM/MRAM of state hard drive internal, read operation speed is faster；Secondly it uses MRAM as write buffer, is guaranteeing
Data while data safety, also substantially increase the speed of data write-in under unexpected power blackout situation；It is done using host memory
Read buffer, so that it may so that the limited space MRAM is used as write buffer as much as possible, so that Optimum cost.
Use MRAM as NAND write buffer, not only speed is fast, and because safer in the case where happening suddenly power-off,
Save expensive circuit breaking protective system.Use MRAM to write number as what write buffer also reduced NAND, play protection it
And the effect to prolong the service life.
In short, this is the good scheme of cost effectiveness.
Further, host memory further includes read buffer table, and whether read buffer table is empty for storing every page in read buffer
Corresponding NAND page address when not busy and busy.
Further, MRAM further includes write buffer table, write buffer table for store every page in write buffer it is whether idle with
And corresponding NAND page address when busy.
Further, MRAM is connected by DDR DRAM interface and the main control chip of solid state hard disk.
Further, MRAM is integrated in the main control chip of solid state hard disk.
The present invention provides the reading method using the storage system with secondary cache structure of the invention, including following step
It is rapid:
(1) it receives and reads NAND page instruction；
(2) according to NAND page address, NAND page is searched in read buffer table whether in the read buffer of host memory, if
In read buffer, the data of NAND page are read from corresponding read buffer page, are executed step (7)；If held not in read buffer
Row step (3)；
(3) according to NAND page address, NAND page is searched in write buffer table whether in the write buffer of MRAM, if writing
In caching, the data of NAND page are read from write buffer, are executed step (5)；If executed step (4) not in write buffer；
(4) data of NAND page are read from NAND chip；
(5) if clearing up read buffer without free time read buffer page in read buffer；
(6) idle read buffer page is written into the data of the NAND page of reading；
(7) read operation terminates.
The present invention also provides the write methods using the storage system with secondary cache structure of the invention, including following step
It is rapid:
(1) it receives and writes NAND page instruction；
(2) according to NAND page address, NAND page is searched in read buffer table whether in the read buffer of host memory, if
In read buffer, write data into read buffer in corresponding read buffer page；
(3) according to NAND page address, NAND page is searched in write buffer table whether in the write buffer of MRAM, if writing
It in caching, writes data into write buffer in corresponding write buffer page, executes step (6)；If executing step not in write buffer
Suddenly (4)；
(4) it writes data into the idle write buffer page of write buffer, is by write buffer page respective record in write buffer table
The no free time is updated to busy；
(5) if the idle write buffer page of write buffer is less than the first early warning value, write buffer is cleared up；
(6) write operation terminates.
Compared with prior art, the storage system and reading/writing method provided by the invention with secondary cache structure have with
It is lower the utility model has the advantages that
(1) read operation performance first is more preferable, since the speed of solid hard disk interface is usually slower than host memory interface rate,
Using the read buffer in host memory than using the read buffer in the DRAM/MRAM inside solid state hard disk, read operation speed is faster；
(2) secondly use MRAM as write buffer, while guaranteeing that data are safe under unexpected power blackout situation, also significantly
Improve the speed of data write-in；
(3) using the read buffer in host memory, so that it may so that the limited space MRAM be used as much as possible write it is slow
It deposits.So that Optimum cost；
(4) use MRAM as NAND write buffer, not only speed is fast, and because more pacifies in the case where happening suddenly power-off
Entirely, expensive circuit breaking protective system is saved, while also reducing power consumption；MRAM is used to also reduce NAND's as write buffer
Number is write, play the role of protecting it and is prolonged the service life.
In short, this is the good scheme of cost effectiveness.
It is described further below with reference to technical effect of the attached drawing to design of the invention, specific structure and generation, with
It is fully understood from the purpose of the present invention, feature and effect.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of solid state hard disk in the prior art；
Fig. 2 is file operation flow chart in the prior art；
Fig. 3 is the structural schematic diagram for being used in mixed way the solid state hard disk of DRAM and MRAM；
Fig. 4 is the structural schematic diagram using the solid state hard disk of MRAM；
Fig. 5 is the structural schematic diagram of the storage system with secondary cache structure of one embodiment of the present of invention；
Fig. 6 is the read operation flow chart using the storage system shown in fig. 5 with secondary cache structure；
Fig. 7 is the write operation flow chart using the storage system shown in fig. 5 with secondary cache structure.
Specific embodiment
As shown in figure 5, the storage system with secondary cache structure of one embodiment of the present of invention, including host memory
DRAM and solid state hard disk, solid state hard disk include main control chip, NAND chip and MRAM, and host memory DRAM includes read buffer,
MRAM includes write buffer.
Host memory further includes read buffer table, read buffer table for store in read buffer every page whether idle and non-empty
The corresponding NAND page address of idle.
Read buffer table can also store read time or read operation frequency.
MRAM further includes write buffer table, and write buffer table is for when storing whether every page is idle and busy in write buffer
Corresponding NAND page address.
Write buffer table can also store write operation time or write operation frequency.
The storage system with secondary cache structure in the present embodiment, read operation performance first is more preferable, since solid-state is hard
The speed of disk interface is usually slower than host memory interface rate, is used inside solid state hard disk using the read buffer ratio in host memory
MRAM in read buffer, read operation speed is faster；Secondly it uses MRAM as write buffer, is guaranteeing data in accident power-off feelings
While safe under condition, the speed of data write-in is also substantially increased；Use the read buffer in host memory, so that it may so that having
The space MRAM of limit is used as write buffer as much as possible, so that Optimum cost.
Use MRAM as NAND write buffer, not only speed is fast, and because safer in the case where happening suddenly power-off,
Save expensive circuit breaking protective system.Use MRAM to write number as what write buffer also reduced NAND, play protection it
And the effect to prolong the service life.
DRAM and MRAM can also be used in mixed way inside solid state hard disk, as shown in Figure 3；MRAM can also be with main control chip collection
In Cheng Yi chip；The invention is not limited in this regard.
Using the reading method of the storage system with secondary cache structure of the present embodiment, as shown in fig. 6, including following step
It is rapid:
(1) it receives and reads NAND page instruction；
(2) according to NAND page address, NAND page is searched in read buffer table whether in the read buffer of host memory, if
In read buffer, the data of NAND page are read from corresponding read buffer page, are executed step (7)；If held not in read buffer
Row step (3)；
(3) according to NAND page address, NAND page is searched in write buffer table whether in the write buffer of MRAM, if writing
In caching, the data of NAND page are read from write buffer, are executed step (5)；If executed step (4) not in write buffer；
(4) data of NAND page are read from NAND chip；
(5) if clearing up read buffer without free time read buffer page in read buffer；
(6) idle read buffer page is written into the data of the NAND page of reading；
(7) read operation terminates.
The method of step (5) cleaning read buffer may comprise steps of:
(1) the read buffer page that release read time is earliest or read operation frequency is minimum；
(2) by read buffer table read buffer page relative recording whether the free time is updated to the free time.
Other methods, the invention is not limited in this regard can also be used by clearing up read buffer.
Using the write method of the storage system with secondary cache structure of the present embodiment, as shown in fig. 7, comprises following step
It is rapid:
(1) it receives and writes NAND page instruction；
(2) according to NAND page address, NAND page is searched in read buffer table whether in the read buffer of host memory, if
In read buffer, write data into read buffer in corresponding read buffer page；
(3) according to NAND page address, NAND page is searched in write buffer table whether in the write buffer of MRAM, if writing
It in caching, writes data into write buffer in corresponding write buffer page, executes step (6)；If executing step not in write buffer
Suddenly (4)；
(4) it writes data into the idle write buffer page of write buffer, is by write buffer page respective record in write buffer table
The no free time is updated to busy；
(5) if the idle write buffer page of write buffer is less than the first early warning value, write buffer is cleared up；
(6) write operation terminates.
Write data into step (2) in read buffer in corresponding read buffer page, for keep data in read buffer with
The data of update are consistent.
The method of step (5) cleaning write buffer may comprise steps of:
(1) data for the write buffer page that the write operation time is earliest or write operation frequency is minimum are write back into corresponding NAND page；
(2) write buffer page is discharged；
(3) by write buffer table write buffer page relative recording whether the free time is updated to the free time.
Other methods, the invention is not limited in this regard can also be used by clearing up write buffer.
Storage system and reading/writing method provided by the invention with secondary cache structure, read operation performance first is more preferable,
Since the speed of solid hard disk interface is usually slower than host memory interface rate, used using the read buffer ratio in host memory solid
Read buffer in the DRAM/MRAM of state hard drive internal, read operation speed is faster；Secondly it uses MRAM as write buffer, is guaranteeing
While data are safe under unexpected power blackout situation, the speed of data write-in is also substantially increased；Use the reading in host memory
Cache read buffer, so that it may so that the limited space MRAM is used as write buffer as much as possible.So that Optimum cost；Use MRAM
As NAND write buffer, not only speed is fast, and because safer in the case where happening suddenly power-off, saves expensive power-off
Protection system, while also reducing power consumption；Use MRAM to write number as what write buffer also reduced NAND, play protection it
And the effect to prolong the service life；In short, this is the good scheme of cost effectiveness.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that those skilled in the art without
It needs creative work according to the present invention can conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be within the scope of protection determined by the claims.
Claims (5)
1. a kind of storage system, which is characterized in that the storage system includes host memory and solid state hard disk, the solid state hard disk
Including main control chip, NAND chip and MRAM, the host memory includes read buffer, and the MRAM includes write buffer；The master
Machine memory further includes read buffer table, the read buffer table for store in read buffer every page it is whether idle and busy when pair
The NAND page address answered；The MRAM further includes write buffer table, and whether the write buffer table is for storing in write buffer every page
Corresponding NAND page address when idle and busy.
2. storage system as described in claim 1, which is characterized in that the MRAM passes through DDR DRAM interface and the solid-state
The main control chip of hard disk connects.
3. storage system as described in claim 1, which is characterized in that the MRAM is integrated in the master control core of the solid state hard disk
In piece.
4. a kind of reading method based on storage system described in any one of the claims 1-3, which is characterized in that the use
The reading method of storage system the following steps are included:
(1) it receives and reads NAND page instruction；
(2) according to the NAND page address, the NAND page is searched in read buffer table whether in the read buffer of host memory,
If reading the data of the NAND page from the corresponding read buffer page in the read buffer, executing step (7)；Such as
Fruit executes step (3) not in the read buffer；
(3) according to the NAND page address, the NAND page is searched in write buffer table whether in the write buffer of MRAM, if
In the write buffer, the data of the NAND page are read from the write buffer, are executed step (5)；If do not write described
In caching, execute step (4)；
(4) data of the NAND page are read from NAND chip；
(5) if clearing up the read buffer without free time read buffer page in read buffer；
(6) by the data write-in of the NAND page of the reading idle read buffer page；
(7) read operation terminates.
5. a kind of write method based on storage system described in any one of the claims 1-3, which is characterized in that the use
The write method of storage system the following steps are included:
(1) it receives and writes NAND page instruction；
(2) according to the NAND page address, the NAND page is searched in read buffer table whether in the read buffer of host memory,
If write data into the read buffer in corresponding read buffer page in the read buffer；
(3) according to the NAND page address, the NAND page is searched in write buffer table whether in the write buffer of MRAM, if
It in the write buffer, writes data into the write buffer in corresponding write buffer page, executes step (6)；If not in institute
It states in write buffer, executes step (4)；
(4) it writes data into the idle write buffer page of the write buffer, by write buffer page respective record described in write buffer table
Whether the free time be updated to it is busy；
(5) if the idle write buffer page of the write buffer is less than the first early warning value, the write buffer is cleared up；
(6) write operation terminates.
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| CN108132757B (en) * | 2016-12-01 | 2021-10-19 | 阿里巴巴集团控股有限公司 | Data storage method and device and electronic equipment |
| CN107315667B (en) * | 2017-06-26 | 2020-10-23 | 苏州浪潮智能科技有限公司 | Method and system for testing acceleration performance of second-level cache of storage system |
| CN107656702B (en) * | 2017-09-27 | 2020-11-20 | 联想(北京)有限公司 | Method and system for accelerating hard disk read-write and electronic equipment |
| CN107832007A (en) * | 2017-10-25 | 2018-03-23 | 记忆科技(深圳)有限公司 | A kind of method of raising SSD combination properties |
| CN108984432B (en) * | 2018-07-16 | 2020-08-14 | 杭州宏杉科技股份有限公司 | Method and device for processing IO (input/output) request |
| CN111506252B (en) * | 2019-01-30 | 2023-08-15 | 瑞昱半导体股份有限公司 | Cache memory and management method thereof |
| CN112748859B (en) * | 2019-10-30 | 2023-03-21 | 上海磁宇信息科技有限公司 | MRAM-NAND controller and data writing method thereof |
| EP4307129A1 (en) * | 2021-04-08 | 2024-01-17 | Huawei Technologies Co., Ltd. | Method for writing data into solid-state hard disk |
| CN117093159B (en) * | 2023-10-18 | 2024-01-26 | 同方威视科技江苏有限公司 | Method and apparatus for accelerating a storage device |
| CN117806573A (en) * | 2024-03-01 | 2024-04-02 | 山东云海国创云计算装备产业创新中心有限公司 | Solid state disk searching method, device, equipment and medium |
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