CN104658470A - Oled pixel circuit - Google Patents
Oled pixel circuit Download PDFInfo
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- CN104658470A CN104658470A CN201310596946.4A CN201310596946A CN104658470A CN 104658470 A CN104658470 A CN 104658470A CN 201310596946 A CN201310596946 A CN 201310596946A CN 104658470 A CN104658470 A CN 104658470A
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Abstract
The invention relates to an OLED pixel circuit, and belongs to the technical field of circuit structures. As the OLED pixel circuit adopting such a structure comprises a seventh transistor which is serially connected between a first capacitor and a sixth transistor in a diode manner, the sixth transistor can be effectively prevented from leakage current when being powered off in the light emitting period, potential loss of the first capacitor is avoided, the pixel color is uniform and the overall display effect of a display is ensured; in addition, the OLED pixel circuit is simple in structure, low in cost and relatively wide in application range.
Description
Technical field
The present invention relates to circuit structure technical field, be particularly applied to the circuit structure technical field of display, specifically refer to a kind of OLED pixel circuit.
Background technology
Existing OLED(Organic Light-Emitting Diode, Organic Light Emitting Diode) image element circuit as shown in Figure 1, OLED pixel circuit sequential chart is as shown in Figure 2.In glow phase, the sweep signal scan [n-1] of previous row sweep trace is in high level, and the transistor T6 being connected to electric capacity C1 turns off.The leakage current Ioff that now transistor T6 produces can cause the potential loss of electric capacity C1, can produce pixel color inequality thus, and then have a negative impact to the overall display effect of display.
Summary of the invention
The object of the invention is to overcome above-mentioned shortcoming of the prior art, a kind of generation that effectively can control transistor drain current is provided, electric capacity current potential is avoided to run off, thus make pixel color even, and then ensure the overall display effect of display, and structure is simple, with low cost, range of application is OLED pixel circuit comparatively widely.
In order to realize above-mentioned object, OLED pixel circuit of the present invention has following formation:
This OLED pixel circuit is formed in the pel array limited by multi-column data line, fine scanning line and multirow isolychn, and described pel array comprises multiple pixel.Described OLED pixel circuit comprises: organic illuminating element, seven transistors and an electric capacity.
Wherein, the first transistor in order to transmit the voltage data signal of described data line under the sweep signal driving of described sweep trace; Transistor seconds in order to produce drive current under the driving of described voltage data signal; Third transistor is in order to detect the threshold voltage deviation of described transistor seconds and to compensate; 4th transistor provides supply voltage to described transistor seconds under driving at the luminous signal of described isolychn; 5th strings of transistors is coupled between described transistor seconds and organic illuminating element, under driving at described luminous signal, provide the drive current produced by transistor seconds to described organic illuminating element; First electric capacity is in order to store described voltage data signal and to transmit this voltage data signal to described transistor seconds; 6th transistor is in order to the first described electric capacity that discharges under the sweep signal driving of previous row sweep trace; 7th transistor is series between the first described electric capacity and the 6th described transistor with diode form, in order to control the leakage current produced when the 6th described transistor turns off.
In this OLED pixel circuit, the 6th described transistor is P-channel field-effect transistor (PEFT) transistor, the sweep signal of the previous row sweep trace described in its grid connects, and its drain electrode connects initialization voltage; And the 7th described transistor is P-channel field-effect transistor (PEFT) transistor, its source electrode is connected to one end of the first described electric capacity, and its grid and its drain electrode are interconnected and are connected to the source electrode of the 6th described transistor.
In this OLED pixel circuit, described the first transistor is switching transistor, and this switching transistor is P-channel field-effect transistor (PEFT) transistor, the sweep trace sweep signal described in its grid connects, data line data signals voltage described in its source electrode connects, the transistor seconds described in its drain electrode connects.
In this OLED pixel circuit, described transistor seconds is driving transistors, this driving transistors is P-channel field-effect transistor (PEFT) transistor, one end of the first electric capacity described in its grid connects, the drain electrode of the first transistor described in its source electrode connects, the organic illuminating element described in its drain electrode is connected by the 5th described transistor.
In this OLED pixel circuit, described third transistor is valve value compensation transistor, this valve value compensation transistor is P-channel field-effect transistor (PEFT) transistor, sweep trace sweep signal described in its grid connects, its source electrode is connected to the drain electrode of described transistor seconds, and its drain electrode is connected to the grid of described transistor seconds, in order under the driving of described sweep signal, described transistor seconds is connected for diode form, and transistor seconds threshold voltage deviation is compensated.
In this OLED pixel circuit, described the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor and the 7th transistor are Thin Film Transistor (TFT).
Have employed the OLED pixel circuit of this invention, the 7th transistor between the first electric capacity and the 6th transistor is series at diode form because it comprises, thus the generation of leakage current when the 6th transistor turns off effectively can be controlled in glow phase, avoid the first electric capacity current potential to run off, thus make pixel color even, and then ensure the overall display effect of display, and OLED pixel circuit of the present invention, its structure is simple, and with low cost, range of application is comparatively extensive.
Accompanying drawing explanation
Fig. 1 be existing in OLED pixel circuit schematic diagram.
Fig. 2 is OLED pixel circuit sequential chart.
Fig. 3 is OLED pixel circuit schematic diagram of the present invention.
Embodiment
In order to more clearly understand technology contents of the present invention, describe in detail especially exemplified by following examples.
Referring to shown in Fig. 3, is OLED pixel circuit schematic diagram of the present invention.
In one embodiment, this OLED pixel circuit is formed in the pel array limited by multi-column data line, fine scanning line and multirow isolychn, and described pel array comprises multiple pixel.This OLED pixel circuit is made up of organic illuminating element EL1, seven Thin Film Transistor (TFT) T1 ~ T7 and the first electric capacity C1.
Wherein, the first transistor T1 is in order to the voltage data signal VDATAm of the data line under sweep signal scan [n] driving of described sweep trace described in transmission; Transistor seconds T2 in order to produce drive current under the driving of described voltage data signal VDATAm; Third transistor T3 is in order to detect the threshold voltage deviation of described transistor seconds T2 and to compensate; 4th transistor T4 provides supply voltage VDD to described transistor seconds T2 under driving at the luminous signal emi [n] of described isolychn; 5th transistor T5 is series between described transistor seconds T2 and organic illuminating element EL1, under driving described luminous signal emi [n], provide the drive current produced by transistor seconds T2 to described organic illuminating element EL1; First electric capacity C1 is in order to store described voltage data signal VDATAm and to transmit this voltage data signal VDATAm to described transistor seconds T2; 6th transistor T6 is in order to the first electric capacity C1 under sweep signal scan [n-1] driving of previous row sweep trace described in electric discharge; 7th transistor T7 is series between the first described electric capacity C1 and the 6th described transistor T6 with diode form, in order to control the leakage current Ioff produced when the 6th described transistor T6 turns off.
In a preferred embodiment, the 6th described transistor T6 is P-channel field-effect transistor (PEFT) transistor, the sweep signal scan [n-1] of the previous row sweep trace described in its grid connects, and its drain electrode connects initialization voltage Vinit; The 7th described transistor T7 is P-channel field-effect transistor (PEFT) transistor, and its source electrode is connected to one end of the first described electric capacity C1, and its grid and its drain electrode are interconnected and are connected to the source electrode of the 6th described transistor T6.
In preferred embodiment, described the first transistor T1 is switching transistor, this switching transistor is P-channel field-effect transistor (PEFT) transistor, sweep trace sweep signal scan [n] described in its grid connects, data line data signals voltage VDATAm described in its source electrode connects, the transistor seconds T2 described in its drain electrode connects.Described transistor seconds T2 is driving transistors, this driving transistors is P-channel field-effect transistor (PEFT) transistor, the one end of the first electric capacity C1 described in its grid connects, the drain electrode of the first transistor T1 described in its source electrode connects, the organic illuminating element EL1 described in its drain electrode is connected by the 5th described transistor T5.Described third transistor T3 is valve value compensation transistor, this valve value compensation transistor is P-channel field-effect transistor (PEFT) transistor, sweep trace sweep signal scan [n] described in its grid connects, its source electrode is connected to the drain electrode of described transistor seconds T2, its drain electrode is connected to the grid of described transistor seconds T2, in order under the driving of described sweep signal scan [n], described transistor seconds T2 is connected for diode form, and transistor seconds T2 threshold voltage deviation is compensated.
In actual applications, the sequential of OLED pixel circuit of the present invention also as shown in Figure 2.
First, at initial phase (initialization period), last sweep signal scan [n-1] is in low level, and sweep signal scan [n] and luminous signal emi [n] is in high level.6th transistor T6 drives conducting by being in low level last sweep signal scan [n-1], and first to the 5th transistor T1 ~ T5 turns off.Form the initialization path that the first electric capacity C1 is charged, to store the grid voltage of transistor seconds (driving transistors) in the first electric capacity C1.
Be program phase (programming period) afterwards, now, last sweep signal scan [n-1] and luminous signal emi [n] is in high level, and sweep signal scan [n] is in low level.6th transistor T6 turns off, third transistor T3 conducting, and transistor seconds T2 connects for diode form.
Now, switching transistor T1 conducting, switching transistor T4 and T5 turns off, and forms a data program path thus, and data voltage VDATAm is applied to the grid of driving transistors T2 by valve value compensation transistor T3.Because driving transistors T2 connects with diode form, the voltage being applied to driving transistors T2 grid is VDATAm-V
tH (T2), V
tH (T2)for the threshold voltage of driving transistors T2, this grid voltage is stored in the first electric capacity C1 simultaneously, completes the program phase with this.
Be finally glow phase (light-emitting period), now, last sweep signal scan [n-1] and sweep signal scan [n] is in high level, and luminous signal emi [n] is in low level.Thus by switching transistor T4, T5 conducting, switching transistor T1, valve value compensation transistor T3 and the 6th transistor T6 turn off, and form a light emitting path.Meanwhile, the drive current produced by voltage data signal is applied to the grid of driving transistors T2, thus conducting driving transistors T2 and organic illuminating element EL1, make organic illuminating element EL1 luminous.The electric current I EL1 now flowing into organic light-emitting element E L1 is shown below:
Wherein, V
gSfor the voltage between driving transistors T2 grid and source electrode, V
dATAfor data voltage VDATAm, β are constant.
In glow phase, the 6th transistor T6 conducting hourglass electric current I off can cause the first electric capacity C1 current potential to run off, thus makes the current potential of the first electric capacity C1 not reach the designing requirement of drive transistor gate voltage, produces the problem of pixel color inequality thus.
In order to overcome this problem, the present invention's the 7th transistor T7 be connected with diode form has connected between one end of the first electric capacity C1 with the 6th transistor T6 source electrode, avoid the 6th transistor T6 to turn off the generation of hourglass electric current I off thus, make the current potential of the first electric capacity C1 reach designing requirement.
Have employed the OLED pixel circuit of this invention, the 7th transistor between the first electric capacity and the 6th transistor is series at diode form because it comprises, thus the generation of leakage current when the 6th transistor turns off effectively can be controlled in glow phase, avoid the first electric capacity current potential to run off, thus make pixel color even, and then ensure the overall display effect of display, and OLED pixel circuit of the present invention, its structure is simple, and with low cost, range of application is comparatively extensive.
In this description, the present invention is described with reference to its specific embodiment.But, still can make various amendment and conversion obviously and not deviate from the spirit and scope of the present invention.Therefore, instructions and accompanying drawing are regarded in an illustrative, rather than a restrictive.
Claims (6)
1. an OLED pixel circuit, be formed in the pel array limited by multi-column data line, fine scanning line and multirow isolychn, described pel array comprises multiple pixel, it is characterized in that, described OLED pixel circuit comprises:
Organic illuminating element (EL1);
The first transistor (T1), in order to the voltage data signal (VDATAm) of the data line under sweep signal (scan [the n]) driving of described sweep trace described in transmission;
Transistor seconds (T2), in order to produce drive current under the driving of described voltage data signal (VDATAm);
Third transistor (T3), in order to detect the threshold voltage deviation of described transistor seconds (T2) and to compensate;
4th transistor (T4), provides supply voltage (VDD) to described transistor seconds (T2) under driving at the luminous signal (emi [n]) of described isolychn;
5th transistor (T5), it is series between described transistor seconds (T2) and organic illuminating element (EL1), under driving at described luminous signal (emi [n]), provide the drive current produced by transistor seconds (T2) to described organic illuminating element (EL1);
First electric capacity (C1), in order to store described voltage data signal (VDATAm) and to transmit this voltage data signal (VDATAm) to described transistor seconds (T2);
6th transistor (T6), in order to the first electric capacity (C1) under sweep signal (scan [the n-1]) driving of previous row sweep trace described in electric discharge;
7th transistor (T7), is series between described the first electric capacity (C1) and the 6th described transistor (T6) with diode form, in order to control the leakage current (Ioff) produced when the 6th described transistor (T6) turns off.
2. OLED pixel circuit according to claim 1, is characterized in that,
The 6th described transistor (T6) is P-channel field-effect transistor (PEFT) transistor, the sweep signal (scan [n-1]) of the previous row sweep trace described in its grid connects, and its drain electrode connects initialization voltage (Vinit);
The 7th described transistor (T7) is P-channel field-effect transistor (PEFT) transistor, and its source electrode is connected to one end of described the first electric capacity (C1), and its grid and its drain electrode are interconnected and are connected to the source electrode of the 6th described transistor (T6).
3. OLED pixel circuit according to claim 1 and 2, it is characterized in that, described the first transistor (T1) is switching transistor, this switching transistor is P-channel field-effect transistor (PEFT) transistor, sweep trace sweep signal (scan [n]) described in its grid connects, data line data signals voltage (VDATAm) described in its source electrode connects, the transistor seconds (T2) described in its drain electrode connects.
4. LED image element circuit according to claim 3, it is characterized in that, described transistor seconds (T2) is driving transistors, this driving transistors is P-channel field-effect transistor (PEFT) transistor, one end of the first electric capacity (C1) described in its grid connects, the drain electrode of the first transistor (T1) described in its source electrode connects, the organic illuminating element (EL1) described in its drain electrode is connected by the 5th described transistor (T5).
5. LED image element circuit according to claim 3, it is characterized in that, described third transistor (T3) is valve value compensation transistor, this valve value compensation transistor is P-channel field-effect transistor (PEFT) transistor, sweep trace sweep signal (scan [n]) described in its grid connects, its source electrode is connected to the drain electrode of described transistor seconds (T2), its drain electrode is connected to the grid of described transistor seconds (T2), in order under the driving of described sweep signal (scan [n]), described transistor seconds (T2) is connected for diode form, and transistor seconds (T2) threshold voltage deviation is compensated.
6. OLED pixel circuit according to claim 1, it is characterized in that, described the first transistor (T1), transistor seconds (T2), third transistor (T3), the 4th transistor (T4), the 5th transistor (T5), the 6th transistor (T6) and the 7th transistor (T7) are Thin Film Transistor (TFT).
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| CN201310596946.4A CN104658470A (en) | 2013-11-22 | 2013-11-22 | Oled pixel circuit |
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| CN201310596946.4A CN104658470A (en) | 2013-11-22 | 2013-11-22 | Oled pixel circuit |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107610652A (en) * | 2017-09-28 | 2018-01-19 | 京东方科技集团股份有限公司 | Image element circuit, its driving method, display panel and display device |
| CN107644615A (en) * | 2016-07-20 | 2018-01-30 | 上海和辉光电有限公司 | One kind reduces capacity coupled circuit and AMOLED display circuits |
| CN109473063A (en) * | 2018-12-06 | 2019-03-15 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit and pixel compensation method |
| CN110751927A (en) * | 2019-10-31 | 2020-02-04 | 上海天马有机发光显示技术有限公司 | Pixel driving circuit, driving method thereof, display panel and display device |
| CN110767165A (en) * | 2019-11-20 | 2020-02-07 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN111243504A (en) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | Pixel driving circuit and display device |
| WO2020215480A1 (en) * | 2019-04-22 | 2020-10-29 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit of organic light-emitting device, and organic light-emitting display panel |
| CN113470574A (en) * | 2021-06-11 | 2021-10-01 | 云谷（固安）科技有限公司 | Pixel circuit, driving method thereof and display panel |
| WO2022016760A1 (en) * | 2020-07-24 | 2022-01-27 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and driving method therefor, and display apparatus |
| CN114758619A (en) * | 2018-08-30 | 2022-07-15 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel and display device |
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| CN107644615A (en) * | 2016-07-20 | 2018-01-30 | 上海和辉光电有限公司 | One kind reduces capacity coupled circuit and AMOLED display circuits |
| CN107644615B (en) * | 2016-07-20 | 2020-06-30 | 上海和辉光电有限公司 | Circuit for reducing capacitive coupling and AMOLED display circuit |
| US10657894B2 (en) | 2017-09-28 | 2020-05-19 | Boe Technology Group Co., Ltd. | Pixel circuit, method for driving the same, display panel, and display device |
| CN107610652A (en) * | 2017-09-28 | 2018-01-19 | 京东方科技集团股份有限公司 | Image element circuit, its driving method, display panel and display device |
| CN114758619A (en) * | 2018-08-30 | 2022-07-15 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof, display panel and display device |
| CN111243504B (en) * | 2018-11-29 | 2021-04-23 | 成都辰显光电有限公司 | Pixel driving circuit and display device |
| CN111243504A (en) * | 2018-11-29 | 2020-06-05 | 昆山工研院新型平板显示技术中心有限公司 | Pixel driving circuit and display device |
| WO2020113790A1 (en) * | 2018-12-06 | 2020-06-11 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit and pixel compensation method |
| US10878755B2 (en) | 2018-12-06 | 2020-12-29 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel compensating circuit and pixel compensating method |
| CN109473063A (en) * | 2018-12-06 | 2019-03-15 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit and pixel compensation method |
| WO2020215480A1 (en) * | 2019-04-22 | 2020-10-29 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit of organic light-emitting device, and organic light-emitting display panel |
| CN110751927A (en) * | 2019-10-31 | 2020-02-04 | 上海天马有机发光显示技术有限公司 | Pixel driving circuit, driving method thereof, display panel and display device |
| CN110751927B (en) * | 2019-10-31 | 2021-10-26 | 上海天马有机发光显示技术有限公司 | Pixel driving circuit, driving method thereof, display panel and display device |
| CN110767165A (en) * | 2019-11-20 | 2020-02-07 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN110767165B (en) * | 2019-11-20 | 2021-02-02 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| WO2022016760A1 (en) * | 2020-07-24 | 2022-01-27 | 武汉华星光电半导体显示技术有限公司 | Pixel circuit and driving method therefor, and display apparatus |
| US11929023B2 (en) | 2020-07-24 | 2024-03-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd | Pixel circuit, method of driving same, and display device |
| CN113470574A (en) * | 2021-06-11 | 2021-10-01 | 云谷（固安）科技有限公司 | Pixel circuit, driving method thereof and display panel |
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