CN102956201B - Pixel circuit, driving method and display device of pixel circuit - Google Patents
Pixel circuit, driving method and display device of pixel circuit Download PDFInfo
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- CN102956201B CN102956201B CN201210445207.0A CN201210445207A CN102956201B CN 102956201 B CN102956201 B CN 102956201B CN 201210445207 A CN201210445207 A CN 201210445207A CN 102956201 B CN102956201 B CN 102956201B
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Abstract
The embodiment of the invention provides a pixel circuit, a driving method and a display device of the pixel circuit, relates to the field of display technology, can effectively compensate the threshold voltage shift of a thin film transistor (TFT) so as to improve the luminance homogeneity of the display device and improve the display effect. The pixel circuit comprises a first transistor, a second transistor, a memory capacitor and a third transistor for driving a luminescent device, wherein the grid electrode of the first transistor is connected with a scanning line; the first electrode of the first transistor is connected with the grid electrode of the third transistor; the second electrode of the first transistor is connected with a control power line; the grid electrode of the second transistor is connected with the scanning line; the first electrode is connected with a data line; the second electrode is connected with one end of the luminescent device; the first electrode of the third transistor is connected with the control power line; the second electrode is connected with one end of the luminescent device; one end of the memory capacitor is connected with a first power voltage; the other end of the memory capacitor is connected with the grid electrode of the third transistor; and the other end of the luminescent device is connected with a second power voltage. The embodiment is applied to manufacturing display panels.
Description
Technical field
The present invention relates to display technique field, relate in particular to a kind of image element circuit and driving method thereof, display device.
Background technology
Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) as a kind of current mode luminescent device, because of its autoluminescence having, fast response, wide visual angle and can be produced on the first-class feature of flexible substrate and be applied to more and more in the middle of high-performance demonstration field.OLED can be divided into PMOLED (Passive Matrix Driving OLED by type of drive, passive matrix drives Organic Light Emitting Diode) and two kinds of AMOLED (Active Matrix DrivingOLED, active matrix-driven organic light-emitting diode).Traditional PMOLED, along with the increase of sized display, need to reduce the driving time of single pixel conventionally, thereby need to increase transient current, thereby causes the significantly rising of power consumption.And in AMOLED technology, each OLED all, by TFT (Thin Film Transistor, thin film transistor (TFT)) the on-off circuit input current of lining by line scan, can address these problems well.
In existing AMOLED panel, TFT on-off circuit adopts low-temperature polysilicon film transistor (LTPS TFT) or oxide thin film transistor (Oxide TFT) more.Compare with general amorphous silicon film transistor (amorphous-Si TFT), LTPS TFT and Oxide TFT have higher mobility and more stable characteristic, are more suitable for being applied in AMOLED demonstration.But the restriction due to crystallization process and production technique, cause the TFT on-off circuit of making on large-area glass substrate usually on electrical parameters such as threshold voltage, mobility, to occur heterogeneity, thereby make the threshold voltage shift of each TFT inconsistent, this will cause current difference and the luminance difference of OLED display device, and by the perception of human eye institute; In addition, under long-time pressurization and high temperature, also can cause the threshold voltage of TFT to occur drift, because display frame is different, the threshold drift amount of panel each several part TFT is different, thereby cause display brightness difference, due to this species diversity with show before image-related, be therefore often rendered as ghost phenomena.
Summary of the invention
Embodiments of the invention provide a kind of image element circuit and driving method thereof, display device, can effectively compensate the threshold voltage shift of TFT, improve the homogeneity of display device luminosity, promote display effect.
For achieving the above object, embodiments of the invention adopt following technical scheme:
The one side of the embodiment of the present invention, provides a kind of image element circuit, comprising:
The first transistor, transistor seconds, memory capacitance and for driving the 3rd transistor of luminescent device;
The grid of described the first transistor connects sweep trace, and its first utmost point connects described the 3rd transistorized grid, and its second utmost point connects controls power lead;
The grid of described transistor seconds connects described sweep trace, its first utmost point connection data line, and its second utmost point connects one end of described luminescent device;
Described the 3rd transistorized first utmost point connects described control power lead, and its second utmost point connects one end of described luminescent device;
One end of described memory capacitance connects the first supply voltage, and its other end connects described the 3rd transistorized grid;
The other end of described luminescent device connects second source voltage.
The embodiment of the present invention on the other hand, provides a kind of display device, comprises image element circuit as above.
The another aspect of the embodiment of the present invention, provides a kind of pixel circuit drive method, comprising:
Conducting the first transistor, transistor seconds and the 3rd transistor, second source Control of Voltage luminescent device is in closed condition, while data line input data signal, control power lead input control signal, so that described the 3rd transistor gate one terminal voltage is the first supply voltage voltage, the voltage that one end that described the 3rd transistor connects described luminescent device is described data-signal;
Keep described the first transistor, described transistor seconds and described the 3rd transistor turns, so that described the 3rd transistor gate one terminal voltage is discharged by described the first transistor, described transistor seconds and described the 3rd transistor;
Close described the first transistor and described transistor seconds, the 3rd transistor described in conducting, described control power lead input control signal, so that memory capacitance keeps described the 3rd transistorized gate source voltage, luminous by luminescent device described in described the 3rd transistorized current drives simultaneously.
The image element circuit that the embodiment of the present invention provides and driving method thereof, display device, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between the 3rd transistor gate and source electrode constant, thereby make by the 3rd transistorized electric current and the 3rd transistorized threshold voltage irrelevant, compensated due to the inconsistent of the 3rd transistorized threshold voltage or be offset the current difference that flows through luminescent device causing, the homogeneity that has improved display device luminosity, has significantly promoted display effect.In addition, because a kind of like this image element circuit structure of structure is simple, transistorized negligible amounts, thus can reduce the area of the lightproof area of covering transistor, effectively increase the aperture opening ratio of display device.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The syndeton schematic diagram of a kind of image element circuit that Fig. 1 provides for the embodiment of the present invention;
Fig. 2 is for driving the sequential chart of each signal wire of image element circuit shown in Fig. 1;
The syndeton schematic diagram of another image element circuit that Fig. 3 provides for the embodiment of the present invention;
Fig. 4 is for driving the sequential chart of each signal wire of image element circuit shown in Fig. 3;
Fig. 5 is that image element circuit shown in Fig. 3 is at the schematic equivalent circuit in preliminary filling stage;
Fig. 6 is that image element circuit shown in Fig. 3 is at the schematic equivalent circuit of compensated stage;
Fig. 7 is that image element circuit shown in Fig. 3 is at the schematic equivalent circuit of glow phase;
The schematic flow sheet of a kind of pixel circuit drive method that Fig. 8 provides for the embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
The image element circuit 1 that the embodiment of the present invention provides, as shown in Figure 1, comprising:
The first transistor T1, transistor seconds T2, memory capacitance C and for driving the 3rd transistor T 3 of luminescent device L.
The grid of the first transistor T1 connects sweep trace SCAN, and its first utmost point connects the grid of the 3rd transistor T 3, and its second utmost point connects controls power lead EMVdd.
The grid of transistor seconds T2 connects sweep trace SCAN, its first utmost point connection data line DATA, and its second utmost point connects one end of luminescent device L.
First utmost point of the 3rd transistor T 3 connects controls power lead EMVdd, and its second utmost point connects one end of luminescent device L.
One end of memory capacitance C connects the first supply voltage (Vdd), and its other end connects the grid of the 3rd transistor T 3.
The other end of luminescent device L connects second source voltage (Vss).
It should be noted that, luminescent device L in the embodiment of the present invention can be that prior art comprises LED (Light Emitting Diode, light emitting diode) or OLED (Organic LightEmitting Diode, Organic Light Emitting Diode) at interior multiple current drives luminescent device.In embodiments of the present invention, be to take the explanation that OLED carries out as example.
The image element circuit that the embodiment of the present invention provides, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between the 3rd transistor gate and source electrode constant, thereby make by the 3rd transistorized electric current and the 3rd transistorized threshold voltage irrelevant, compensated due to the inconsistent of the 3rd transistorized threshold voltage or be offset the current difference that flows through luminescent device causing, the homogeneity that has improved display device luminosity, has significantly promoted display effect.In addition, because a kind of like this image element circuit structure of structure is simple, transistorized negligible amounts, thus can reduce the area of the lightproof area of covering transistor, effectively increase the aperture opening ratio of display device.
Wherein, the first transistor T1, transistor seconds T2 and the 3rd transistor T 3 can be all N-type transistor; Or the first transistor T1 and transistor seconds T2 can be P transistor npn npn, the 3rd transistor T 3 can be N-type transistor.
With the first transistor T1, be to take transistor seconds T2 and the 3rd transistor T 3 to be N-type transistor as example, when the work of the image element circuit shown in Fig. 1, its course of work specifically can be divided into three phases, is respectively: preliminary filling stage, compensated stage and glow phase.Fig. 2 is the sequential chart of each signal wire in the course of work of image element circuit shown in Fig. 1.As shown in Figure 2, with I, II and III, correspondingly represent preliminary filling stage, compensated stage and glow phase respectively in the drawings.
At preliminary filling, in the stage, control power lead EMVdd, sweep trace SCAN, second source voltage (being power supply Vss voltage) and the equal input high level of data line DATA.Now, the first transistor T1, transistor seconds T2 and the 3rd transistor T 3 conductings, the first supply voltage is controlled luminescent device L in closed condition, while data line DATA input data signal, control power lead EMVdd input control signal, so that the 3rd transistor T 3 grid one terminal voltages are the first supply voltage (being power supply Vdd voltage), the voltage (being Vdata) that one end that the 3rd transistor T 3 connects luminescent device L is data-signal.
In compensated stage, control power lead EMVdd input low level, sweep trace SCAN, second source voltage and the equal input high level of data line DATA.Now, keep the first transistor T1, transistor seconds T2 and the 3rd transistor T 3 conductings, so that the 3rd transistor T 3 grid one terminal voltages are by the first transistor T1, transistor seconds T2 and the 3rd transistor T 3 electric discharges.
In glow phase, control power lead EMVdd input high level, sweep trace SCAN, second source voltage and the equal input low level of data line DATA.Now, close the first transistor T1 and transistor seconds T2, conducting the 3rd transistor T 3 is controlled power lead EMVdd input control signal simultaneously, so that memory capacitance C keeps the gate source voltage of the 3rd transistor T 3, luminous by the current drives luminescent device L of the 3rd transistor T 3.
It should be noted that, when the first transistor T1 and transistor seconds T2 are P transistor npn npn, the sequential of sweep trace SCAN can contrary with SCAN sequential in above-mentioned Fig. 2 (phase differential that is the two be 180 degree).
Further, as shown in Figure 3, the image element circuit 1 that the embodiment of the present invention provides can also comprise:
The 4th transistor T 4.
The grid of the 4th transistor T 4 connects control line EM, and its first utmost point connects the first supply voltage, i.e. power supply Vdd voltage, and its second utmost point connects controls power lead EMVdd.
In the image element circuit providing in the embodiment of the present invention, the 4th transistor T 4 can be N-type transistor or P transistor npn npn, take N-type transistor as example, the N-type transistor that the embodiment of the present invention provides can be all N-type enhancement mode TFT (Thin Film Transistor, thin film transistor (TFT)) or N-type depletion type TFT.Wherein, first of the first transistor T1, transistor seconds T2, the 3rd transistor T 3 and the 4th transistor T 4 extremely all can refer to source electrode, and second utmost point all can refer to drain electrode.
Take below the first transistor T1, transistor seconds T2, the 3rd transistor T 3 and the 4th transistor T 4, to be N-type enhancement mode TFT be example, and the course of work of the image element circuit that the embodiment of the present invention is provided is elaborated.
Similar with previous embodiment, when the work of the image element circuit shown in Fig. 3, its course of work comprises three phases equally, is respectively: preliminary filling stage, compensated stage and glow phase.Fig. 4 is the sequential chart of each signal wire in the course of work of image element circuit shown in Fig. 3.As shown in Figure 2, with I, II and III, correspondingly represent preliminary filling stage, compensated stage and glow phase respectively in the drawings.
First stage is the preliminary filling stage, and the equivalent electrical circuit in this stage as shown in Figure 5.At preliminary filling, in the stage, sweep trace SCAN and control line EM are high level, and the voltage (Vdata) of data line DATA output is now high voltage, and second source voltage (Vss) is that high level is not luminous to guarantee OLED.Now, the equal conducting of transistor T 1, T2, T3 and T4, OLED turn-offs.Control power lead EMVdd and the first supply voltage (Vdd) conducting, the source electrode N1 point pre-charge pressure of transistor T 1 is the first supply voltage, and the source electrode N2 pre-charge pressure of transistor T 3 is the voltage of data line DATA output.
Subordinate phase is compensated stage, and the equivalent electrical circuit in this stage as shown in Figure 6.Wherein, sweep trace SCAN is high level, and control line EM is low level.Now transistor T 1, T2 and T3 conducting, transistor T 4 turn-offs.In this stage, the source electrode N1 point of transistor T 1 discharges by transistor T 1, T2 and the T3 of conducting, until the voltage that N1 is ordered equals Vdata+Vth, now N2 point voltage is Vdata, and wherein, Vth is the threshold voltage of transistor T 3.
Phase III is glow phase, and the equivalent electrical circuit in this stage as shown in Figure 7.In this stage, sweep trace SCAN is low level, and control line EM is high level, and second source voltage (Vss) is low level.Now, transistor T 3 and T4 conducting, simultaneously transistor T 1 and T2 turn-off, and control power lead EMVdd and the first supply voltage (Vdd) conducting, and so, memory capacitance C is connected between the grid source electrode of transistor T 3 the gate source voltage V with maintenance transistor T 3
gS, the electric charge of its storage remains unchanged, and the electric current that now flows through transistor T 3 is luminous for driving OLED, this electric current I
oLEDfor:
Wherein, μ
nfor carrier mobility, C
oXfor gate oxide electric capacity, W/L is transistor breadth length ratio, and Vdata is data voltage, and ELVdd is the voltage of the first supply voltage, for all pixel cells, shares, and Vth is transistorized threshold voltage.In prior art, the Vth between different pixels unit is not quite similar, and the Vth in same pixel also likely drifts about in time, and this will cause display brightness difference, due to this species diversity with show before image-related, be therefore often rendered as ghost phenomena.
From with above formula (1), for the luminous electric current I of driving OLED
oLEDirrelevant with the threshold voltage vt h of transistor T 3, therefore eliminated transistor threshold voltage heterogeneity to the impact showing.By a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between the 3rd transistor gate and source electrode constant, thereby make by the 3rd transistorized electric current and the 3rd transistorized threshold voltage irrelevant, compensated due to the inconsistent of the 3rd transistorized threshold voltage or be offset the current difference that flows through luminescent device causing, the homogeneity that has improved display device luminosity, has significantly promoted display effect.In addition, because a kind of like this image element circuit structure of structure is simple, transistorized negligible amounts, thus can reduce the area of the lightproof area of covering transistor, effectively increase the aperture opening ratio of display device.
It should be noted that, in the above-described embodiments, transistor is all to take the explanation that enhancement mode N-type TFT carries out as example.Or, can adopt equally depletion type N-type TFT, its difference is, for enhancement mode TFT, threshold voltage vt h be on the occasion of, and for depletion type TFT, threshold voltage vt h is negative value.In the above-described embodiments, the 4th transistor T 4 can be N-type transistor or P transistor npn npn, more than to take the explanation that N-type transistor carries out as example, certainly, the 4th transistor T 4 can also adopt P transistor npn npn, when the 4th transistor T 4 is P transistor npn npn, the sequential of control line EM can contrary with EM sequential in above-mentioned Fig. 4 (phase differential that is the two be 180 degree).
The embodiment of the present invention also provides a kind of display device, comprises organic light emitting display, other displays etc.Described display device comprises any one image element circuit as above.Described display device can comprise a plurality of pixel unit array, and each pixel cell comprises any one image element circuit as above.Alternatively, as shown in Figure 3, a corresponding row pixel cell of the 4th transistor T 4.The identical beneficial effect of image element circuit providing with previous embodiment of the present invention is provided, because image element circuit has been described in detail in the aforementioned embodiment, repeats no more herein.
Concrete, the display device that the embodiment of the present invention provides can be the display device with current drives luminescent device that comprises light-emitting diode display or OLED display.
The display device that the embodiment of the present invention provides, comprise image element circuit, this image element circuit is carried out switch and discharges and recharges control circuit by a plurality of transistors and electric capacity, can be so that memory capacitance keeps the gate source voltage between the 3rd transistor gate and source electrode constant, thereby make by the 3rd transistorized electric current and the 3rd transistorized threshold voltage irrelevant, compensated due to the inconsistent of the 3rd transistorized threshold voltage or be offset the current difference that flows through luminescent device causing, the homogeneity that has improved display device luminosity, has significantly promoted display effect.In addition, because a kind of like this image element circuit structure of structure is simple, transistorized negligible amounts, thus can reduce the area of the lightproof area of covering transistor, effectively increase the aperture opening ratio of display device.
The pixel circuit drive method that the embodiment of the present invention provides, the image element circuit that can be applied to provide in previous embodiment, as shown in Figure 8, comprising:
S801, conducting the first transistor, transistor seconds and the 3rd transistor, second source Control of Voltage luminescent device is in closed condition, while data line input data signal, control power lead input control signal, so that the 3rd transistor gate one terminal voltage is the first supply voltage, the 3rd transistor connects the voltage that one end of this luminescent device is data-signal.
S802, maintenance the first transistor, transistor seconds and the 3rd transistor turns, so that the 3rd transistor gate one terminal voltage is discharged by the first transistor, transistor seconds and the 3rd transistor.
Concrete, after this step, the voltage that the voltage of the 3rd transistor gate one end is data-signal (being voltage Vdata) and the 3rd transistorized threshold voltage vt h sum, the voltage that one end of the 3rd transistor connection luminescent device is data-signal.
S803, close the first transistor and transistor seconds, conducting the 3rd transistor is controlled power lead input control signal simultaneously, so that memory capacitance keeps the 3rd transistorized gate source voltage, luminous by the 3rd transistorized current drives luminescent device.
Because the voltage between the 3rd transistor gate source has had the 3rd transistorized threshold voltage vt h, glow phase at luminescent device, this gate source voltage will deduct threshold voltage vt h again, thereby realize voltage compensation, so, can be so that the drive current of luminescent device and threshold voltage vt h be irrelevant.
The embodiment of the present invention provides comprises pixel circuit drive method, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between the 3rd transistor gate and source electrode constant, thereby make by the 3rd transistorized electric current and the 3rd transistorized threshold voltage irrelevant, compensated due to the inconsistent of the 3rd transistorized threshold voltage or be offset the current difference that flows through luminescent device causing, the homogeneity that has improved display device luminosity, has significantly promoted display effect.In addition, because a kind of like this image element circuit structure of structure is simple, transistorized negligible amounts, thus can reduce the area of the lightproof area of covering transistor, effectively increase the aperture opening ratio of display device.
It should be noted that, the luminescent device in the embodiment of the present invention can be that prior art comprises that LED or OLED are at interior multiple current drives luminescent device.
In embodiments of the present invention, can adopt the 4th transistor controls to control power lead.
Concrete, the 4th transistor can a corresponding row image element circuit.
The 4th transistorized grid connects control line, and its first utmost point connects the first supply voltage, and its second utmost point connects controls power lead.
The 4th transistor can be N-type transistor or P transistor npn npn.
Further, in embodiments of the present invention, the first transistor, transistor seconds and the 3rd transistor can be all N-type transistor; Or the first transistor and transistor seconds can be P transistor npn npn, the 3rd transistor can be N-type transistor.
It should be noted that, when only comprising the first transistor, transistor seconds and the 3rd transistor, and the first transistor, transistor seconds and the 3rd transistor be while being N-type transistor, and the sequential of control signal can as shown in Figure 2, comprise:
First stage: control power lead, sweep trace, second source voltage and the equal input high level of data line.
Subordinate phase: control power lead input low level, sweep trace, second source voltage and the equal input high level of data line.
Phase III: control power lead input high level, sweep trace, second source voltage and the equal input low level of data line.
Or when the first transistor, transistor seconds, the 3rd transistor and the 4th transistor are N-type transistor, the sequential of control signal can as shown in Figure 4, comprise:
First stage: control line, sweep trace, second source voltage and the equal input high level of data line.
Subordinate phase: control line input low level, sweep trace, second source voltage and the equal input high level of data line.
Phase III: control line input high level, sweep trace, second source voltage and the equal input low level of data line.
For example, when this first transistor, transistor seconds, the 3rd transistor and the 4th transistor are N-type reinforced membranes transistor, step S801 specifically can comprise:
Sweep trace input high level is so that conducting the first transistor, transistor seconds and the 3rd transistor, the equal input high level of second source voltage, data line and control line, to control luminescent device in closed condition, the 3rd transistor gate one terminal voltage is the first supply voltage, the voltage that one end of the 3rd transistor connection luminescent device is data-signal.
Wherein, this step is the preliminary filling stage, and shown in Fig. 2, sweep trace SCAN and control line EM are high level, and the voltage (Vdata) of data line DATA output is now high voltage, and second source voltage (Vss) is that high level is not luminous to guarantee OLED.Now, the equal conducting of transistor T 1, T2, T3 and T4, OLED turn-offs.Control power lead EMVdd and the first supply voltage (Vdd) conducting, the source electrode N1 point pre-charge pressure of transistor T 1 is the first supply voltage, and the source electrode pre-charge pressure of transistor T 3 is the voltage of data line DATA output.
Accordingly, step S802 specifically can comprise:
Sweep trace input high level is to keep the first transistor, transistor seconds and the 3rd transistor turns, close the 4th transistor so that control power lead input low level, so that the 3rd transistor gate one terminal voltage is discharged by the first transistor, transistor seconds and the 3rd transistor.
This step is compensated stage, and wherein, sweep trace SCAN is high level, and control line EM is low level.Now transistor T 1, T2 and T3 conducting, transistor T 4 turn-offs.In this stage, the source electrode N1 point of transistor T 1 discharges by transistor T 1, T2 and the T3 of conducting, until the voltage that N1 is ordered equals Vdata+Vth, wherein, Vth is the threshold voltage of transistor T 3.
Step S803 specifically can comprise:
Sweep trace input low level is to close the first transistor and transistor seconds, control line input high level is with conducting the 3rd transistor and described the 4th transistor, control power lead input control signal, so that memory capacitance keeps the 3rd transistorized gate source voltage, luminous by the 3rd transistorized current drives luminescent device.
This step is glow phase, and in this stage, sweep trace SCAN is low level, and control line EM is high level, and second source voltage (Vss) is low level.Now, transistor T 3 and T4 conducting, simultaneously transistor T 1 and T2 turn-off, and control power lead EMVdd and the first supply voltage (Vdd) conducting, and so, memory capacitance C is connected between the grid source electrode of transistor T 3 the gate source voltage V with maintenance transistor T 3
gS, the electric charge of its storage remains unchanged, and the current drives OLED that now flows through transistor T 3 is luminous, and for the luminous drive current I of driving OLED
oLEDirrelevant with the threshold voltage vt h of transistor T 3, therefore eliminated transistor threshold voltage heterogeneity to the impact showing.
One of ordinary skill in the art will appreciate that: all or part of flow process that realizes said method embodiment can complete by the relevant hardware of computer program instructions, aforesaid program can be stored in a computer read/write memory medium, this program, when carrying out, is carried out the step that comprises said method embodiment; And aforesaid storage medium comprises: various media that can be program code stored such as ROM, RAM, magnetic disc or CDs.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; can expect easily changing or replacing, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.
Claims (12)
1. an image element circuit, is characterized in that, comprising:
The first transistor, transistor seconds, memory capacitance and for driving the 3rd transistor of luminescent device;
The grid of described the first transistor connects sweep trace, and its first utmost point connects described the 3rd transistorized grid, and its second utmost point connects controls power lead;
The grid of described transistor seconds connects described sweep trace, its first utmost point connection data line, and its second utmost point connects one end of described luminescent device;
Described the 3rd transistorized first utmost point connects described control power lead, and its second utmost point connects one end of described luminescent device;
One end of described memory capacitance connects the first supply voltage, and its other end connects described the 3rd transistorized grid;
The other end of described luminescent device connects second source voltage.
2. image element circuit according to claim 1, is characterized in that, also comprises:
The 4th transistor;
Described the 4th transistorized grid connects control line, and its first utmost point connects described the first supply voltage, and its second utmost point connects described control power lead.
3. image element circuit according to claim 2, is characterized in that, described the 4th transistor is N-type transistor or P transistor npn npn;
The described the 4th transistorized first source electrode very, its second very drain electrode.
4. image element circuit according to claim 1 and 2, is characterized in that,
Described the first transistor, described transistor seconds and described the 3rd transistor are N-type transistor; Or,
Described the first transistor and described transistor seconds are P transistor npn npn, and described the 3rd transistor is N-type transistor;
Described the first transistor, described transistor seconds and described the 3rd transistorized first utmost point are source electrode, and described the first transistor, described transistor seconds and described the 3rd transistorized second utmost point are drain electrode.
5. image element circuit according to claim 1 and 2, is characterized in that, described luminescent device is organic light emitting diode.
6. a display device, is characterized in that, comprises as the image element circuit as described in arbitrary in claim 1 to 5.
7. a pixel circuit drive method, is characterized in that, comprising:
Conducting the first transistor, transistor seconds and the 3rd transistor, second source Control of Voltage luminescent device is in closed condition, while data line input data signal, control power lead input control signal, so that described the 3rd transistor gate one terminal voltage is the first supply voltage, the voltage that one end that described the 3rd transistor connects described luminescent device is described data-signal;
Keep described the first transistor, described transistor seconds and described the 3rd transistor turns, so that described the 3rd transistor gate one terminal voltage is discharged by described the first transistor, described transistor seconds and described the 3rd transistor;
Close described the first transistor and described transistor seconds, the 3rd transistor described in conducting, described control power lead input control signal, so that memory capacitance keeps described the 3rd transistorized gate source voltage, luminous by luminescent device described in described the 3rd transistorized current drives simultaneously.
8. method according to claim 7, it is characterized in that, keeping described the first transistor, described transistor seconds and described the 3rd transistor turns, so that described the 3rd transistor gate one terminal voltage is by after described the first transistor, described transistor seconds and described the 3rd transistor electric discharge
The voltage of described the 3rd transistor gate one end is voltage and described the 3rd transistorized threshold voltage sum of described data-signal, the voltage that one end that described the 3rd transistor connects described luminescent device is described data-signal.
9. method according to claim 7, is characterized in that, controls power lead described in the 4th transistor controls;
A corresponding row image element circuit of described the 4th transistor;
Described the 4th transistorized grid connects control line, and its first utmost point connects described the first supply voltage, and its second utmost point connects described control power lead;
Described the 4th transistor is N-type transistor or P transistor npn npn.
10. according to the arbitrary described method of claim 7 to 9, it is characterized in that, described the first transistor, described transistor seconds and described the 3rd transistor are N-type transistor; Or,
Described the first transistor and described transistor seconds are P transistor npn npn, and described the 3rd transistor is N-type transistor.
11. methods according to claim 10, it is characterized in that, when only comprising described the first transistor, described transistor seconds and described the 3rd transistor, and above-mentioned the first transistor, described transistor seconds and described the 3rd transistor be while being N-type transistor, and the sequential of control signal comprises:
First stage: described control power lead, described sweep trace, described second source voltage and the equal input high level of described data line;
Subordinate phase: described control power lead input low level, described sweep trace, described second source voltage and the equal input high level of described data line;
Phase III: described control power lead input high level, described sweep trace, described second source voltage and the equal input low level of described data line.
12. methods according to claim 10, is characterized in that, when described the first transistor, described transistor seconds, described the 3rd transistor and described the 4th transistor are N-type transistor, the sequential of control signal comprises:
First stage: described control line, described sweep trace, described second source voltage and the equal input high level of described data line;
Subordinate phase: described control line input low level, described sweep trace, described second source voltage and the equal input high level of described data line;
Phase III: described control line input high level, described sweep trace, described second source voltage and the equal input low level of described data line.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210445207.0A CN102956201B (en) | 2012-11-08 | 2012-11-08 | Pixel circuit, driving method and display device of pixel circuit |
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| CN201210445207.0A CN102956201B (en) | 2012-11-08 | 2012-11-08 | Pixel circuit, driving method and display device of pixel circuit |
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| CN103236237B (en) * | 2013-04-26 | 2015-04-08 | 京东方科技集团股份有限公司 | Pixel unit circuit and compensating method of pixel unit circuit as well as display device |
| CN105469751A (en) * | 2014-09-05 | 2016-04-06 | 联咏科技股份有限公司 | Ghost shadow elimination method and driving method, driving device, panel and display system thereof |
| CN105528996B (en) * | 2016-01-29 | 2018-04-10 | 深圳市华星光电技术有限公司 | Pixel compensation circuit, method, scan drive circuit and flat display apparatus |
| CN107356348B (en) * | 2017-07-20 | 2019-07-05 | 京东方科技集团股份有限公司 | A kind of temperature sensor and its temperature checking method |
| CN109920374B (en) * | 2017-12-13 | 2020-12-22 | 京东方科技集团股份有限公司 | Pixel driving circuit, control method thereof, display panel and electronic equipment |
| CN109949741B (en) * | 2019-03-27 | 2024-03-29 | 深圳市思坦科技有限公司 | Logic gate operation circuit based on pixel driving, integrated chip and display device |
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