CN203288217U - Pixel circuit and display device - Google Patents
Pixel circuit and display device Download PDFInfo
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- CN203288217U CN203288217U CN2013203355285U CN201320335528U CN203288217U CN 203288217 U CN203288217 U CN 203288217U CN 2013203355285 U CN2013203355285 U CN 2013203355285U CN 201320335528 U CN201320335528 U CN 201320335528U CN 203288217 U CN203288217 U CN 203288217U
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Abstract
The utility model discloses a pixel circuit and a display device, and relates to the technical field of display. The pixel circuit and the display device aim at compensating TFT threshold voltage drift, improving non-uniformity of display brightness of the display device and prolonging the service life of the display device. The pixel circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a first storage capacitor, a second storage capacitor and a light-emitting device. The pixel circuit and the display device are applicable to manufacturing of display panels.
Description
Technical field
The utility model relates to the display technique field, relates in particular to a kind of image element circuit and display device.
Background technology
Progressive rapidly along with display technique also obtained tremendous progress as the semiconductor component technology of display device core thereupon.For existing display device, Organic Light Emitting Diode (Organic Light Emitting Diode, OLED) as a kind of current mode luminescent device, because of its autoluminescence that has, fast response, wide visual angle and can be produced on the first-class characteristics of flexible substrate and be applied to more and more in the middle of high-performance demonstration field.OLED can be divided into PMOLED (Passive Matrix Driving OLED by type of drive, passive matrix drives Organic Light Emitting Diode) and AMOLED (Active Matrix Driving OLED, active matrix-driven organic light-emitting diode) two kinds, because having large etc. the advantage of low manufacturing cost, high answer speed, power saving, the direct drive that can be used for portable set, operating temperature range, the AMOLED display is expected to become the novel planar display of future generation that replaces LCD (liquid crystal display, liquid crystal display).
In existing AMOLED display panel, each OLED includes a plurality of TFT (Thin Film Transistor, thin film transistor (TFT)) on-off circuit, restriction due to production technology and production technique etc., cause usually heterogeneity occurring on electrical parameters such as threshold voltage, mobility at the TFT on-off circuit of making on the large-area glass substrate, thereby the variation of the forward voltage stress that the electric current that makes the AMOLED that flows through not only can produce along with the long-time conducting of TFT and changing, but also can be different along with the threshold voltage shift of TFT.Thus, will have influence on brightness uniformity and the brightness constancy of display.On the other hand, the AMOLED under duty also will be in bias state for a long time, accelerate the speed of display device decay, thus the life-span of having reduced display device.
The utility model content
Embodiment of the present utility model provides a kind of image element circuit and display device,, in order to the TFT threshold voltage shift is compensated, improves the unevenness of display device display brightness, the serviceable life of prolong showing device.
For achieving the above object, embodiment of the present utility model adopts following technical scheme:
The one side of the utility model embodiment, provide a kind of image element circuit, comprising:
The first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the first memory capacitance, the second memory capacitance and luminescent device;
The grid of described the first transistor connects the described the 3rd transistorized first utmost point, and its first utmost point connects the described the 5th transistorized second utmost point, and its second utmost point connects the first voltage;
The grid of described transistor seconds connects the first control line, and its first utmost point connects the described the 4th transistorized second utmost point, and its second utmost point connects the described the 5th transistorized second utmost point;
The described the 3rd transistorized grid connects described the first control line, and its first utmost point connects an end of described the first memory capacitance, and its second utmost point connects variable voltage;
The described the 4th transistorized grid connects the second control line, its first utmost point connection data line;
The described the 5th transistorized grid connects the light emitting control line, and its first utmost point connects the anode of described luminescent device;
One end of described the second memory capacitance is connected with the other end of described the first memory capacitance, and its other end connects described variable voltage;
The negative electrode of described luminescent device connects second voltage.
The utility model embodiment on the other hand, provides a kind of display device, comprises image element circuit as above.
the image element circuit that the utility model embodiment provides and display device, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between first crystal tube grid and source electrode constant, thereby make by the electric current of the first transistor and threshold voltage and first independent from voltage of this first transistor, thereby the inconsistent of the first transistor threshold voltage or drift are compensated, the impact of having avoided the resistance drop (I-Rdrop) of the first voltage to cause the electric current that flows through luminescent device, significantly improved the homogeneity of display device display brightness, on the other hand, by removing the electric charge of luminescent device anode, avoided luminescent device to be in for a long time the positive bias state, thereby effectively slowed down the speed of luminescent device decay, greatly improved the serviceable life of display device.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
The syndeton schematic diagram of a kind of image element circuit that Fig. 1 provides for the utility model embodiment;
Fig. 2 is the sequential chart of each signal wire while driving the described image element circuit of Fig. 1;
Fig. 3 is the schematic equivalent circuit of image element circuit shown in Figure 1 at initial phase;
Fig. 4 is the schematic equivalent circuit of image element circuit shown in Figure 1 in acquisition phase;
Fig. 5 is the schematic equivalent circuit of image element circuit shown in Figure 1 at the data input phase;
Fig. 6 is the schematic equivalent circuit of image element circuit shown in Figure 1 in glow phase;
The schematic flow sheet of a kind of pixel circuit drive method that Fig. 7 provides for the utility model embodiment.
Embodiment
Below in conjunction with the accompanying drawing in the utility model embodiment, the technical scheme in the utility model embodiment is clearly and completely described, obviously, described embodiment is only the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making under the creative work prerequisite the every other embodiment that obtains, and all belong to the scope of the utility model protection.
The image element circuit 1 that the utility model embodiment provides as shown in Figure 1, comprising:
The first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5, the first memory capacitance C1, the second memory capacitance C2 and luminescent device L.
The grid of the first transistor T1 connects first utmost point of the 3rd transistor T 3, and its first utmost point connects second utmost point of the 5th transistor T 5, and its second utmost point connects the first voltage (Vdd).
The grid of transistor seconds T2 connects the first control line Sn-1, and its first utmost point connects second utmost point of the 4th transistor T 4, and its second utmost point connects second utmost point of the 5th transistor T 5.
The grid of the 3rd transistor T 3 connects the first control line Sn-1, and its first utmost point connects the end of the first memory capacitance C1, and its second utmost point connects variable voltage (Vref).
The grid of the 4th transistor T 4 connects the second control line Sn, its first utmost point connection data line Date.
The grid of described the 5th transistor T 5 connects light emitting control line Em, and its first utmost point connects the anode of luminescent device L.
The end of the second memory capacitance C2 is connected with the other end of the first memory capacitance C1, and its other end connects variable voltage (Vref).
The negative electrode of luminescent device L connects second voltage (Vss).
Need to prove, luminescent device L in the utility model embodiment can be that prior art comprises LED (Light Emitting Diode, light emitting diode) or OLED (Organic Light Emitting Diode, Organic Light Emitting Diode) at interior multiple current drives luminescent device.In the utility model embodiment, it is the explanation of carrying out as an example of OLED example.
the image element circuit that the utility model embodiment provides and display device, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between first crystal tube grid and source electrode constant, thereby make by the electric current of the first transistor and threshold voltage and first independent from voltage of this first transistor, thereby the inconsistent of the first transistor threshold voltage or drift are compensated, the impact of having avoided the resistance drop (I-Rdrop) of the first voltage to cause the electric current that flows through luminescent device, significantly improved the homogeneity of display device display brightness, on the other hand, by removing the electric charge of luminescent device anode, avoided luminescent device to be in for a long time the positive bias state, thereby effectively slowed down the speed of luminescent device decay, greatly improved the serviceable life of display device.
Need to prove, in the utility model embodiment, voltage Vdd can refer to high voltage, and voltage Vss can be low-voltage or earth terminal.
Wherein, the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 can be the N-type transistor; Perhaps the first transistor T1 can be the N-type transistor, and transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 can be the P transistor npn npn; Perhaps the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 can be the P transistor npn npn; Perhaps the first transistor T1 can be the P transistor npn npn, and transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 can be the N-type transistor.When adopting dissimilar transistor, the external control signal of image element circuit is also different.
For example, take the N-type transistor as example, in the image element circuit that the utility model embodiment provides, the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 all can be N-type enhancement mode TFT (Thin Film Transistor, thin film transistor (TFT)) or N-type depletion type TFT.Wherein, first of the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 extremely all can refer to source electrode, and second utmost point all can refer to drain electrode.
Below be N-type depletion type TFT as example take the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5, the course of work of the image element circuit that the utility model embodiment is provided is elaborated.
When image element circuit shown in Figure 1 was worked, its course of work specifically can be divided into four-stage, is respectively: initial phase, acquisition phase, data input phase and glow phase.Fig. 2 is the sequential chart of each signal wire in the image element circuit course of work shown in Figure 1.As shown in Figure 2, correspondingly represent initial phase, acquisition phase, data input phase and glow phase with Pr, P1, P2 and P3 respectively in the drawings.
First stage is initial phase, and as shown in Figure 3, wherein, actual energising circuit and device adopt solid line to represent to the equivalent electrical circuit in this stage, and the unit that do not switch on adopts dotted line to represent, below each equivalent circuit diagram identical with the expression mode of changing plan.At initial phase, the first control line Sn-1, the second control line Sn and light emitting control line Em input high level, the data voltage (Vdata) of variable voltage (Vref) and data line Data output is low level.transistor seconds T2 as shown in Figure 3, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5 is switched on, close the first transistor T1, the first memory capacitance C1 and the second memory capacitance C2 are reset, and first utmost point of transistor seconds T2 is low-voltage (Vdate) with the voltage at the node b place that second of the 4th transistor T 4 extremely is connected, so the anode potential of luminescent device L is this electronegative potential (Vdata), so upper five transistor T 5 of electric charge by being switched on that stores of luminescent device L, transistor seconds T2 and the 4th transistor T 4 outputs, so, can be so that the electric charge removing of the long-time storage of OLED anode, thereby guarantee that it is not in the positive bias state, thereby slow down the speed of OLED decay, improve the life-span of display device.
Subordinate phase is acquisition phase, and the equivalent electrical circuit in this stage as shown in Figure 4.In this acquisition phase, the data voltage (Vdata) of variable voltage (Vref) and data line Data output is high level, the first control line Sn-1 input high level, the second control line Sn and light emitting control line Em input low level.as shown in Figure 4, close the 4th transistor T 4, the 5th transistor T 5, transistor seconds T2, the 3rd transistor T 3 is switched on, the high level of variable voltage (Vref) input makes the first transistor T1 conducting, the grid of the first transistor T1 is high voltage (Vref) with the voltage at the node a place that first of the 3rd transistor T 3 extremely is connected, because this voltage makes just conducting of the first transistor T1, thereby make the c point current potential identical with the other end current potential of the first memory capacitance be upgraded to Vref-Vth, wherein Vth is the threshold voltage of the first transistor, it is stored in the first memory capacitance C1.
Phase III is the data input phase, and the equivalent electrical circuit in this stage as shown in Figure 5.Data voltage (Vdata) in this stage variable voltage (Vref) and data line Data output is high level, the second control line Sn input high level, the first control line Sn-1 and light emitting control line Em input low level.As shown in Figure 5, close transistor seconds T2, the 3rd transistor T 3, the 5th transistor T 5, the four transistor Ts 4 and be switched on, the data voltage (Vdata) of data line Data output is stored in the second memory capacitance C2.At this moment, the voltage of node b is (Vdata).Because in subordinate phase, the threshold voltage vt h of the first transistor has been stored in the first memory capacitance C1, thereby make the current potential of node a be promoted to: A=Vref+Vdata-Vref+Vth=Vdata+Vth.
Fourth stage is glow phase, and the equivalent electrical circuit in this stage as shown in Figure 6.In this stage, variable voltage (Vref), light emitting control line Em are high level, data voltage (Vdata) input low level of the first control line Sn-1, the second control line Sn and data line Data output.As shown in Figure 6, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 are closed, and the first transistor T1, the 5th transistor T 5 are switched on.At this moment, the voltage that makes the first transistor conducting is the voltage at node a place in the phase III, i.e. Vgs=Vdata+Vth, and the current drives OLED that therefore flows through the first transistor T1 is luminous, this electric current I
OLEDFor:
(1)
Wherein, K is the current constant that is associated with the first transistor T1, and Vdata is data voltage, and Vref is variable voltage, and Vth is transistorized threshold voltage.In prior art, the Vth between the different pixels unit is not quite similar, and the Vth in same pixel also likely drifts about in time, and this will cause display brightness difference, due to this species diversity with show before image-related, therefore often be rendered as ghost phenomena.
By above formula (1) as can be known, be used for the luminous electric current I of driving OLED
OLEDIrrelevant with the threshold voltage vt h of the first transistor T1, and this electric current is not subjected to the control of the first voltage (Vdd) yet.Therefore eliminated the impact of the resistance drop (I-R drop) of the non-homogeneous type of transistor threshold voltage and the first voltage on display effect.by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between first crystal tube grid and source electrode constant, thereby make by the electric current of the first transistor and threshold voltage and first independent from voltage of this first transistor, thereby the inconsistent of the first transistor threshold voltage or drift are compensated, the impact of having avoided the I-R drop of the first voltage to cause the electric current that flows through luminescent device, significantly improved the homogeneity of display device display brightness, on the other hand, by removing the electric charge of luminescent device anode, avoided luminescent device to be in for a long time the positive bias state, thereby effectively slowed down the speed of luminescent device decay, greatly improved the serviceable life of display device.
Need to prove, in the above-described embodiments, transistor is all explanations of carrying out as example take N-type depletion type TFT.Perhaps, can adopt equally N-type enhancement mode TFT, its difference is, for depletion type TFT, threshold voltage vt h is negative value, and for enhancement mode TFT, threshold voltage vt h be on the occasion of.
In addition, the first transistor T1 can also adopt the N-type transistor, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 all can be the P transistor npn npn, the sequential of the external signal of the image element circuit of a kind of like this structure of driving also should be done corresponding adjustment, wherein, the sequential of the first control line Sn-1, the second control line Sn and light emitting control line Em opposite with the corresponding signal sequence shown in Fig. 2 (namely both phase differential is 180 degree).
Perhaps, the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 are the P transistor npn npn, the sequential of the external signal of the image element circuit of a kind of like this structure of driving also should be done corresponding adjustment, wherein, the sequential of the first control line Sn-1, the second control line Sn, variable voltage (Vref), data voltage (Vdata) and light emitting control line Em opposite with the corresponding signal sequence shown in Fig. 2 (namely both phase differential is 180 degree).
Perhaps, the first transistor T1 is the P transistor npn npn, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 are the N-type transistor, the sequential of the external signal of the image element circuit of a kind of like this structure of driving also should be done corresponding adjustment, wherein, the sequential of variable voltage Vref and data voltage (Vdata) opposite with the corresponding signal sequence shown in Fig. 2 (namely both phase differential is 180 degree).
The utility model embodiment also provides a kind of display device, comprises any one image element circuit as above.Described display device can comprise a plurality of pixel unit array, and each pixel cell comprises any one image element circuit as above.The identical beneficial effect of image element circuit that provides with the utility model previous embodiment is provided,, because image element circuit has been described in detail in the aforementioned embodiment, repeats no more herein.
Concrete, the display device that the utility model embodiment provides can be the display device with current drives luminescent device that comprises light-emitting diode display or OLED display.
the display device that the utility model embodiment provides, comprise image element circuit, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between first crystal tube grid and source electrode constant, thereby make by the electric current of the first transistor and threshold voltage and first independent from voltage of this first transistor, thereby the inconsistent of the first transistor threshold voltage or drift are compensated, the impact of having avoided the I-R drop of the first voltage to cause the electric current that flows through luminescent device, significantly improved the homogeneity of display device display brightness, on the other hand, by removing the electric charge of luminescent device anode, avoided luminescent device to be in for a long time the positive bias state, thereby effectively slowed down the speed of luminescent device decay, greatly improved the serviceable life of display device.
The pixel circuit drive method that the utility model embodiment provides, the image element circuit that can be applied to provide in previous embodiment as shown in Figure 7, comprising:
S701, conducting transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, control the first transistor and be in closed condition, while data line input low level, the electric charge of removing luminescent device anode.
S702, close the 4th transistor and the 5th transistor, conducting transistor seconds and the 3rd transistor, variable voltage is controlled the first transistor conducting, and the first transistor threshold voltage is stored in the first memory capacitance;
S703, conducting the 4th transistor, close transistor seconds, the 3rd transistor, the 5th transistor, and the high level of data line input is stored in the second memory capacitance;
S704, close transistor seconds, the 3rd transistor and the 4th transistor, conducting the first transistor, the 5th transistor, luminous by the first transistor and the 5th described luminescent device of transistorized current drives.
the pixel circuit drive method that the utility model embodiment provides, by a plurality of transistors and electric capacity, circuit is carried out switch and discharges and recharges control, can be so that memory capacitance keeps the gate source voltage between first crystal tube grid and source electrode constant, thereby make by the electric current of the first transistor and threshold voltage and first independent from voltage of this first transistor, thereby the inconsistent of the first transistor threshold voltage or drift are compensated, the impact of having avoided the I-R drop of the first voltage to cause the electric current that flows through luminescent device, significantly improved the homogeneity of display device display brightness, on the other hand, by removing the electric charge of luminescent device anode, avoided luminescent device to be in for a long time the positive bias state, thereby effectively slowed down the speed of luminescent device decay, greatly improved the serviceable life of display device.
Need to prove, the luminescent device in the utility model embodiment can be that prior art comprises that LED or OLED are at interior multiple current drives luminescent device.
Wherein, the first transistor, transistor seconds, the 3rd transistor, the 4th transistor and the 5th transistor all can be the N-type transistor; Perhaps the first transistor is the N-type transistor, and transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 all can be the P transistor npn npn; Perhaps the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 are the P transistor npn npn; Perhaps the first transistor T1 is the P transistor npn npn, and transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 are the N-type transistor.
For example, take the N-type transistor as example, in the image element circuit that the utility model embodiment provides, the first transistor T1, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 and the 5th transistor T 5 all can be N-type enhancement mode TFT or N-type depletion type TFT.
Need to prove, when the first transistor, transistor seconds, the 3rd transistor, the 4th transistor and the 5th transistor were the N-type depletion mode transistor, the sequential of control signal can as shown in Figure 2, comprise:
Initial phase: the first control line, the second control line and light emitting control line input high level, variable voltage and data line input low level;
Acquisition phase: the second control line and light emitting control line input low level, the first control line, variable voltage and data line input high level;
Data input phase: the first control line and light emitting control line input low level, the second control line, variable voltage and data line input high level;
Glow phase: the first control line, the second control line and data line input low level, variable voltage and light emitting control line input high level.
For example, when this first transistor, transistor seconds, the 3rd transistor, the 4th transistor and the 5th transistor were N-type depletion type thin film transistor (TFT), step S701 specifically can comprise:
This step is initial phase, with reference to shown in Figure 2, in the starting stage, the first control line Sn-1, the second control line Sn and light emitting control line Em input high level, the data voltage (Vdata) of variable voltage (Vref) and data line Data output is low level.transistor seconds T2 as shown in Figure 3, the 3rd transistor T 3, the 4th transistor T 4, the 5th transistor T 5 is switched on, close the first transistor T1, the first memory capacitance C1 and the second memory capacitance C2 are reset, and first utmost point of transistor seconds T2 is low-voltage (Vdate) with the voltage at the node b place that second of the 4th transistor T 4 extremely is connected, so the anode potential of luminescent device L is this low-voltage (Vdata), so upper five transistor T 5 of electric charge by being switched on that stores of luminescent device L, transistor seconds T2 and the 4th transistor T 4 outputs, so, can be so that the electric charge removing of the long-time storage of OLED anode, thereby guarantee that it is not in the positive bias state, thereby slow down the speed of OLED decay, improve the life-span of display device.
Accordingly, step S702 specifically can comprise:
This step is acquisition phase, in this acquisition phase, the data voltage (Vdata) of variable voltage (Vref) and data line Data output is high level, the first control line Sn-1 input high level, the second control line Sn and light emitting control line Em input low level.as shown in Figure 4, close the 4th transistor T 4, the 5th transistor T 5, transistor seconds T2, the 3rd transistor T 3 is switched on, the high level of variable voltage (Vref) input makes the first transistor T1 conducting, the grid of the first transistor T1 is high voltage (Vref) with the voltage at the node a place that first of the 3rd transistor T 3 extremely is connected, because this voltage makes just conducting of the first transistor T1, thereby make the c point current potential identical with the other end current potential of the first memory capacitance be upgraded to Vref-Vth, wherein Vth is the threshold voltage of the first transistor, it is stored in the first memory capacitance C1.
Step S703 specifically can comprise:
This stage is the data input phase, data voltage (Vdata) in this stage variable voltage (Vref) and data line Data output is high level, the second control line Sn input high level, the first control line Sn-1 and light emitting control line Em input low level.As shown in Figure 5, close transistor seconds T2, the 3rd transistor T 3, the 5th transistor T 5, the four transistor Ts 4 and be switched on, the data voltage (Vdata) of data line Data output is stored in the second memory capacitance C2.At this moment, the voltage of node b is (Vdata).Because in subordinate phase, the threshold voltage vt h of the first transistor has been stored in the first memory capacitance C1, thereby make the current potential of node a be promoted to: A=Vref+Vdata-Vref+Vth=Vdata+Vth.
Step S704 specifically can comprise:
This stage is glow phase, and in this stage, variable voltage (Vref), light emitting control line Em are high level, data voltage (Vdata) input low level of the first control line Sn-1, the second control line Sn and data line Data output.As shown in Figure 6, transistor seconds T2, the 3rd transistor T 3, the 4th transistor T 4 are closed, and the first transistor T1, the 5th transistor T 5 are switched on.At this moment, the voltage that makes the first transistor conducting is the voltage at node a place in the phase III, i.e. Vgs=Vdata+Vth, and the current drives OLED that therefore flows through the first transistor T1 is luminous, this electric current I
OLEDIrrelevant with the threshold voltage vt h of the first transistor T1, and this electric current is not subjected to the control of the first voltage (Vdd) yet.Therefore eliminated the impact of the resistance drop I-R drop of the non-homogeneous type of transistor threshold voltage and the first voltage on display effect.
One of ordinary skill in the art will appreciate that: all or part of step that realizes said method embodiment can be completed by the hardware that programmed instruction is correlated with, aforesaid program can be stored in a computer read/write memory medium, this program when carrying out, is carried out the step that comprises said method embodiment; And aforesaid storage medium comprises: the various media that can be program code stored such as ROM, RAM, magnetic disc or CD.
The above; it is only embodiment of the present utility model; but protection domain of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, within all should being encompassed in protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of described claim.
Claims (6)
1. an image element circuit, is characterized in that, comprising:
The first transistor, transistor seconds, the 3rd transistor, the 4th transistor, the 5th transistor, the first memory capacitance, the second memory capacitance and luminescent device;
The grid of described the first transistor connects the described the 3rd transistorized first utmost point, and its first utmost point connects the described the 5th transistorized second utmost point, and its second utmost point connects the first voltage;
The grid of described transistor seconds connects the first control line, and its first utmost point connects the described the 4th transistorized second utmost point, and its second utmost point connects the described the 5th transistorized second utmost point;
The described the 3rd transistorized grid connects described the first control line, and its first utmost point connects an end of described the first memory capacitance, and its second utmost point connects variable voltage;
The described the 4th transistorized grid connects the second control line, its first utmost point connection data line;
The described the 5th transistorized grid connects the light emitting control line, and its first utmost point connects the anode of described luminescent device;
One end of described the second memory capacitance is connected with the other end of described the first memory capacitance, and its other end connects described variable voltage;
The negative electrode of described luminescent device connects second voltage.
2. image element circuit according to claim 1, is characterized in that, described the first transistor, described transistor seconds, described the 3rd transistor, described the 4th transistor and described the 5th transistor are the N-type transistor; Or,
Described the first transistor is the N-type transistor, and described transistor seconds, described the 3rd transistor, described the 4th transistor and described the 5th transistor are the P transistor npn npn; Or,
Described the first transistor, described transistor seconds, described the 3rd transistor, described the 4th transistor and described the 5th transistor are the P transistor npn npn; Or,
Described the first transistor is the P transistor npn npn, and described transistor seconds, described the 3rd transistor, described the 4th transistor and described the 5th transistor are the N-type transistor.
3. image element circuit according to claim 1, is characterized in that, described the first transistor, described transistor seconds, described the 3rd transistor, described the 4th transistor and the described the 5th transistorized first utmost point are source class, and second utmost point is Lou level.
4. according to claim 1 or 3 described image element circuits, is characterized in that, described transistor comprises depletion type thin film transistor (TFT) TFT or enhancement mode TFT.
5. according to claim 1 or 3 described image element circuits, is characterized in that, described luminescent device is Organic Light Emitting Diode.
6. a display device, is characterized in that, comprises as image element circuit as described in arbitrary in claim 1 to 5.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103310732A (en) * | 2013-06-09 | 2013-09-18 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN104200771A (en) * | 2014-09-12 | 2014-12-10 | 上海天马有机发光显示技术有限公司 | Pixel circuit, array substrate and display device |
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2013
- 2013-06-09 CN CN2013203355285U patent/CN203288217U/en not_active Withdrawn - After Issue
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| CN104200771A (en) * | 2014-09-12 | 2014-12-10 | 上海天马有机发光显示技术有限公司 | Pixel circuit, array substrate and display device |
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