CN104145217B - 用于电子束、深uv和极uv光刻胶的具有有机共配体的金属过氧化合物 - Google Patents
用于电子束、深uv和极uv光刻胶的具有有机共配体的金属过氧化合物 Download PDFInfo
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
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- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000012954 diazonium Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- WJJMNDUMQPNECX-UHFFFAOYSA-N dipicolinic acid Chemical class OC(=O)C1=CC=CC(C(O)=O)=N1 WJJMNDUMQPNECX-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
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- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- XXUJMEYKYHETBZ-UHFFFAOYSA-N ethyl 4-nitrophenyl ethylphosphonate Chemical compound CCOP(=O)(CC)OC1=CC=C([N+]([O-])=O)C=C1 XXUJMEYKYHETBZ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- IFQUWYZCAGRUJN-UHFFFAOYSA-N ethylenediaminediacetic acid Chemical compound OC(=O)CNCCNCC(O)=O IFQUWYZCAGRUJN-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 125000001072 heteroaryl group Chemical group 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
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- 210000003644 lens cell Anatomy 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- 239000005300 metallic glass Substances 0.000 description 1
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- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000006384 oligomerization reaction Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000003791 organic solvent mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-O oxonium Chemical compound [OH3+] XLYOFNOQVPJJNP-UHFFFAOYSA-O 0.000 description 1
- AUONHKJOIZSQGR-UHFFFAOYSA-N oxophosphane Chemical compound P=O AUONHKJOIZSQGR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- YHBDIEWMOMLKOO-UHFFFAOYSA-I pentachloroniobium Chemical compound Cl[Nb](Cl)(Cl)(Cl)Cl YHBDIEWMOMLKOO-UHFFFAOYSA-I 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical class OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 125000005575 polycyclic aromatic hydrocarbon group Chemical group 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N propionic acid ethyl ester Natural products CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- NIPZZXUFJPQHNH-UHFFFAOYSA-N pyrazine-2-carboxylic acid Chemical compound OC(=O)C1=CN=CC=N1 NIPZZXUFJPQHNH-UHFFFAOYSA-N 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 150000003232 pyrogallols Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- LISFMEBWQUVKPJ-UHFFFAOYSA-N quinolin-2-ol Chemical compound C1=CC=C2NC(=O)C=CC2=C1 LISFMEBWQUVKPJ-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-N sulfonic acid Chemical compound OS(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 230000002110 toxicologic effect Effects 0.000 description 1
- 231100000027 toxicology Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FIQMHBFVRAXMOP-UHFFFAOYSA-N triphenylphosphane oxide Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)(=O)C1=CC=CC=C1 FIQMHBFVRAXMOP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C59/00—Compounds having carboxyl groups bound to acyclic carbon atoms and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
- C07C59/01—Saturated compounds having only one carboxyl group and containing hydroxy or O-metal groups
- C07C59/08—Lactic acid
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
Abstract
Description
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/405,587 US8703386B2 (en) | 2012-02-27 | 2012-02-27 | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
US13/405,587 | 2012-02-27 | ||
PCT/IB2013/051128 WO2013128313A1 (en) | 2012-02-27 | 2013-02-12 | Metal peroxo compounds with organic co-ligands for electron beam, deep uv and extreme uv photoresist applications |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104145217A CN104145217A (zh) | 2014-11-12 |
CN104145217B true CN104145217B (zh) | 2019-02-05 |
Family
ID=49003237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201380011075.3A Expired - Fee Related CN104145217B (zh) | 2012-02-27 | 2013-02-12 | 用于电子束、深uv和极uv光刻胶的具有有机共配体的金属过氧化合物 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8703386B2 (zh) |
JP (1) | JP2015513540A (zh) |
KR (1) | KR20140121826A (zh) |
CN (1) | CN104145217B (zh) |
DE (1) | DE112013000700B4 (zh) |
GB (1) | GB2512794B (zh) |
SG (1) | SG11201402450UA (zh) |
WO (1) | WO2013128313A1 (zh) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9176377B2 (en) | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
JP5830048B2 (ja) * | 2013-03-15 | 2015-12-09 | 信越化学工業株式会社 | チタン含有レジスト下層膜形成用組成物及びパターン形成方法 |
US9310684B2 (en) | 2013-08-22 | 2016-04-12 | Inpria Corporation | Organometallic solution based high resolution patterning compositions |
JP6495025B2 (ja) | 2014-01-31 | 2019-04-03 | ラム リサーチ コーポレーションLam Research Corporation | 真空統合ハードマスク処理および装置 |
GB201405335D0 (en) * | 2014-03-25 | 2014-05-07 | Univ Manchester | Resist composition |
GB201413924D0 (en) * | 2014-08-06 | 2014-09-17 | Univ Manchester | Electron beam resist composition |
WO2016043198A1 (ja) * | 2014-09-17 | 2016-03-24 | Jsr株式会社 | パターン形成方法 |
JP6572899B2 (ja) | 2014-09-17 | 2019-09-11 | Jsr株式会社 | パターン形成方法 |
JP6784670B2 (ja) | 2014-10-23 | 2020-11-11 | インプリア・コーポレイションInpria Corporation | 有機金属溶液に基づいた高解像度パターニング組成物および対応する方法 |
JP6544248B2 (ja) * | 2015-02-09 | 2019-07-17 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
JP6384373B2 (ja) * | 2015-03-20 | 2018-09-05 | Jsr株式会社 | パターン形成方法 |
WO2016172737A1 (en) * | 2015-04-22 | 2016-10-27 | Robinson Alex Phillip Graham | Sensitivity enhanced photoresists |
GB201517273D0 (en) * | 2015-09-30 | 2015-11-11 | Univ Manchester | Resist composition |
EP3391148B1 (en) | 2015-10-13 | 2021-09-15 | Inpria Corporation | Organotin oxide hydroxide patterning compositions, precursors, and patterning |
JP6993982B2 (ja) | 2016-03-11 | 2022-02-04 | インプリア・コーポレイション | 予めパターン形成されたリソグラフィ・テンプレート、該テンプレートを使用した放射線パターニングに基づくプロセス、及び該テンプレートを形成するためのプロセス |
EP3435158A4 (en) | 2016-03-24 | 2019-01-30 | Fujifilm Corporation | ACTIVE RADIATIVE OR RADIATIVE COMPOSITION, METHOD FOR CLEANING AN ACTIVE RADIATION-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, STRUCTURE-FORMING METHOD, AND METHOD FOR PRODUCING AN ELECTRONIC DEVICE |
US20180373143A1 (en) * | 2016-04-22 | 2018-12-27 | Irresistible Materials Ltd | Sensitivity enhanced photoresists |
TWI759147B (zh) | 2016-08-12 | 2022-03-21 | 美商因普利亞公司 | 減少邊緣珠區域中來自含金屬光阻劑之金屬殘留物的方法 |
KR101947517B1 (ko) * | 2018-01-23 | 2019-02-13 | 영창케미칼 주식회사 | Euv 광원용 감광성 포토레지스트 미세패턴 형성용 현상액 조성물 |
JP6933605B2 (ja) * | 2018-05-21 | 2021-09-08 | 信越化学工業株式会社 | パターン形成方法 |
WO2019241402A1 (en) | 2018-06-13 | 2019-12-19 | Brewer Science, Inc. | Adhesion layers for euv lithography |
US11092889B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
KR102307977B1 (ko) | 2018-07-31 | 2021-09-30 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
US11092890B2 (en) | 2018-07-31 | 2021-08-17 | Samsung Sdi Co., Ltd. | Semiconductor resist composition, and method of forming patterns using the composition |
TW202016279A (zh) | 2018-10-17 | 2020-05-01 | 美商英培雅股份有限公司 | 圖案化有機金屬光阻及圖案化的方法 |
KR20210076999A (ko) | 2018-11-14 | 2021-06-24 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
US11720022B2 (en) | 2019-02-12 | 2023-08-08 | Samsung Electronics Co., Ltd. | Resist compound, method of forming pattern using the same, and method of manufacturing semiconductor device using the same |
US11609494B2 (en) | 2019-04-30 | 2023-03-21 | Samsung Sdi Co., Ltd. | Semiconductor photoresist composition and method of forming patterns using the composition |
WO2020264557A1 (en) * | 2019-06-28 | 2020-12-30 | Lam Research Corporation | Photoresist with multiple patterning radiation-absorbing elements and/or vertical composition gradient |
KR20220031649A (ko) * | 2019-06-28 | 2022-03-11 | 램 리써치 코포레이션 | 금속-함유 레지스트의 리소그래피 성능을 향상시키기 위한 소성 (bake) 전략들 |
KR102446362B1 (ko) | 2019-10-15 | 2022-09-21 | 삼성에스디아이 주식회사 | 반도체 포토 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
KR102539806B1 (ko) | 2020-01-15 | 2023-06-05 | 램 리써치 코포레이션 | 포토레지스트 부착 및 선량 감소를 위한 하부층 |
KR20220147617A (ko) | 2020-03-02 | 2022-11-03 | 인프리아 코포레이션 | 무기 레지스트 패터닝을 위한 공정 환경 |
EP4147269A1 (en) | 2020-05-06 | 2023-03-15 | Inpria Corporation | Multiple patterning with organometallic photopatternable layers with intermediate freeze steps |
US11942322B2 (en) * | 2020-05-22 | 2024-03-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices and pattern formation method |
TWI781629B (zh) * | 2020-05-22 | 2022-10-21 | 台灣積體電路製造股份有限公司 | 半導體裝置的製造方法 |
US20230045336A1 (en) * | 2020-07-07 | 2023-02-09 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
US11726405B2 (en) * | 2020-09-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photoresist for semiconductor fabrication |
CN115407607A (zh) * | 2022-06-28 | 2022-11-29 | 大连理工大学 | 一类锌氧簇化合物在光刻胶领域的应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003238573A (ja) * | 2002-02-18 | 2003-08-27 | Toray Ind Inc | 有機金属化合物を含む組成物ならびにディスプレイ部材およびディスプレイ |
CN1524104A (zh) * | 2001-04-09 | 2004-08-25 | 积水化学工业株式会社 | 光反应性组合物 |
WO2008082448A1 (en) * | 2006-11-01 | 2008-07-10 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61273539A (ja) | 1985-05-29 | 1986-12-03 | Hitachi Ltd | 放射線感応性材料 |
US5061599A (en) * | 1986-06-11 | 1991-10-29 | Hitachi, Ltd. | Radiation sensitive materials |
JPH083627B2 (ja) * | 1986-06-11 | 1996-01-17 | 株式会社日立製作所 | 放射線感応性材料 |
US5178989A (en) * | 1989-07-21 | 1993-01-12 | Board Of Regents, The University Of Texas System | Pattern forming and transferring processes |
KR100573436B1 (ko) | 2001-10-30 | 2006-04-26 | 간사이 페인트 가부시키가이샤 | 산화 티탄막 형성용 도포제, 산화 티탄막 형성방법 및산화 티탄막으로 피복된 금속 기재 |
KR20030057133A (ko) | 2001-12-28 | 2003-07-04 | 삼성전자주식회사 | 금속 패턴 형성용 유기금속 전구체 및 이를 이용한 금속패턴 형성방법 |
JP2006182714A (ja) * | 2004-12-28 | 2006-07-13 | Tohoku Univ | 有機タンタル水溶液および乳酸タンタルペルオキシ化合物結晶の製造方法 |
JP5776400B2 (ja) * | 2011-07-20 | 2015-09-09 | Jsr株式会社 | 金属酸化物膜形成用組成物 |
-
2012
- 2012-02-27 US US13/405,587 patent/US8703386B2/en active Active
-
2013
- 2013-02-12 KR KR1020147020226A patent/KR20140121826A/ko not_active Application Discontinuation
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1524104A (zh) * | 2001-04-09 | 2004-08-25 | 积水化学工业株式会社 | 光反应性组合物 |
JP2003238573A (ja) * | 2002-02-18 | 2003-08-27 | Toray Ind Inc | 有機金属化合物を含む組成物ならびにディスプレイ部材およびディスプレイ |
WO2008082448A1 (en) * | 2006-11-01 | 2008-07-10 | State Of Oregon Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University | Solution processed thin films and laminates, devices comprising such thin films and laminates, and method for their use and manufacture |
Non-Patent Citations (6)
Title |
---|
ANDREW C. DENGEL 等.Studies on transition metal peroxo complexes-IX Carboxylato peroxo complexes of niobium(Ⅴ), tantalum(Ⅴ), zirconium(Ⅳ) and hafnium (Ⅳ).《Polyhedron》.1989,第8卷(第11期),第1371-1377页. * |
Coordination Complexes of Niobium and Tantalum. VI. Seven-Coordinated Oxalatoniobates(V) and -tantalates(V)";NEVENKA BRNICEVIC 等;《Inorganic Chemistry》;19680930;第7卷(第9期);第1936-1938页 * |
Spectroscopic and Structural Characterizations of Novel Water-Soluble Tetraperoxo and Diperoxo[polyaminocarboxylato bis(N-oxido)]tantalate(V) Complexes;Daisy Bayot 等;《Inorganic Chemistry》;20040824;第43卷(第19期);第5999-6005页 * |
Studies on transition metal peroxo complexes-IX Carboxylato peroxo complexes of niobium(Ⅴ), tantalum(Ⅴ), zirconium(Ⅳ) and hafnium (Ⅳ);ANDREW C. DENGEL 等;《Polyhedron》;19891231;第8卷(第11期);第1371-1377页 * |
Synthesis and Structure of New Water-Soluble and Stable Tantalum Compound: Ammonium Tetralactatodiperoxo-í-oxo-ditantalate(V);Valery Petrykin 等;《Inorganic Chemistry》;20061021;第45卷(第23期);第9251-9256页 * |
Vibrational Spectra of Eight-Coordinate Niobium and Tantalum Complexes with Peroxo Ligands: A Theoretical Simulation;Daisy Bayot 等;《Eur. J. Inorg. Chem.》;20050905;第2005卷(第20期);第4118-4123页 * |
Also Published As
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DE112013000700T5 (de) | 2014-10-09 |
JP2015513540A (ja) | 2015-05-14 |
GB2512794B (en) | 2015-05-06 |
US20130224652A1 (en) | 2013-08-29 |
US8703386B2 (en) | 2014-04-22 |
GB201413639D0 (en) | 2014-09-17 |
GB2512794A (en) | 2014-10-08 |
DE112013000700B4 (de) | 2016-09-22 |
WO2013128313A1 (en) | 2013-09-06 |
KR20140121826A (ko) | 2014-10-16 |
CN104145217A (zh) | 2014-11-12 |
SG11201402450UA (en) | 2014-06-27 |
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