CN103338039B - Based on phase-locked loop and the preparation method of micromechanics clamped beam condenser type power sensor - Google Patents
Based on phase-locked loop and the preparation method of micromechanics clamped beam condenser type power sensor Download PDFInfo
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Abstract
The invention discloses the phase-locked loop based on micromechanics clamped beam condenser type power sensor and preparation method, comprise substrate, the co-planar waveguide holding wire be arranged on substrate, the two pairs of MEMS fixed beam structures, merits close device, terminal build-out resistor and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator.Just can change the size of voltage controlled oscillator variable capacitance by reference to the phase difference between signal and voltage controlled oscillator output signal, thus control the frequency of output signal, and then by object that the feedback effect of voltage controlled oscillator makes whole circuit reach phase-locked.Not only structure is simple, novel, is easy to modularization, integrated, and the input controlling voltage controlled oscillator is direct current, eliminates loop filter, have the advantage with GaAs single-chip microwave integration circuit compatibility relative to traditional phase lock circuitry.
Description
Technical field
The present invention relates to microelectromechanical systems (MEMS), especially based on the phase-locked loop of micromechanics clamped beam condenser type power sensor.
Background technology
Phase-locked loop is the automatic control control system of a closed loop, and output signal and input signal can be made synchronous in frequency and phase place.In synchronous regime, the phase difference between output signal and input signal is zero or keeps constant.Automatic frequency controls and the fusion of automatic phase control technology by it, is widely used in the system such as modulation /demodulation of frequency synthesis, clock recovery and signal.Present stage mainly contains analog phase-locked look, numerical model analysis phase-locked loop and all-digital phase-locked loop three kinds, and they all have three basic parts: phase detectors, loop filter and voltage controlled oscillator.
Microelectromechanical systems (MEMS) refers to can batch making, integrates micro mechanism, microsensor, micro actuator and signal transacting with control circuit until interface, to communicate and the microdevice of power supply etc. or system.In recent years, along with the fast development of MEMS technology, how to utilize MEMS technology and to the measurement of the phase information of high-frequency signal become people research focus.Phase-locked loop is requisite control system in measuring.
Summary of the invention
The technical problem solved: according to the deficiencies in the prior art, the invention provides a kind of phase-locked loop based on micromechanics clamped beam condenser type power sensor, solves technical problem phase-locked when measuring high-frequency signal phase information.
Technical scheme: for solving the problems of the technologies described above, the present invention by the following technical solutions:
Based on the phase-locked loop of micromechanics clamped beam condenser type power sensor, comprise substrate, the co-planar waveguide holding wire be arranged on substrate, ground wire, the two pairs of MEMS fixed beam structures, merits close device, terminal build-out resistor and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator, define an axis of symmetry over the substrate;
Described ground wire is formed symmetrical centered by the axis of symmetry, comprises the two side ground wires and a center ground wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two side ground wires respectively there is the breach that symmetrical; Described co-planar waveguide holding wire is formed symmetrical centered by the axis of symmetry, comprises two the input co-planar waveguide holding wires and an output co-planar waveguide holding wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Terminal build-out resistor is provided with between described output co-planar waveguide holding wire and side ground wire;
Described merit is closed device and is formed symmetrical centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires and isolation resistance that are symmetrically distributed in this axis of symmetry; The input of two described asymmetric coplanar stripline holding wires is isolated by isolation resistance, and inputs co-planar waveguide holding wire with two respectively and be connected; The described output co-planar waveguide holding wire of the connected rear access of output of two described asymmetric coplanar stripline holding wires;
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively; Described first pair of MEMS fixed beam structure comprises two the first clamped beams of relative symmetry axisymmetrical, described two the first clamped beams are respectively across above the input co-planar waveguide holding wire of corresponding side, and the two ends of described first clamped beam are fixed on the side ground wire of center ground wire and the same side respectively by anchor district; Described second pair of MEMS fixed beam structure comprises two the second clamped beams of relative symmetry axisymmetrical, and described two the second clamped beams are respectively by the breach two ends of the side ground wire of connection the same side, anchor district;
Described MEMS fixed beam structure condenser type power sensor, comprises the 3rd fixed beam structure, two sensing electrodes, two press welding blocks; The 3rd clamped beam in described 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam and is connected with the side ground wire of both sides respectively by anchor district; Described two sensing electrodes are all symmetrically distributed in and export between co-planar waveguide holding wire and respective side ground wire below the 3rd fixed beam structure, form variable capacitance between described sensing electrode and the 3rd clamped beam above it; Described two sensing electrodes are connected with wherein same press welding block each via a connecting line, and two connecting lines be connected with two sensing electrodes are each passed through the breach of the side ground wire of both sides; Another press welding block is connected with a wherein side ground wire by connecting line;
Two inputs of described external capacitor bikini voltage controlled oscillator are connected with described two press welding blocks respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal;
In described first pair of MEMS fixed beam structure, the input co-planar waveguide holding wire below the first clamped beam correspondence is coated with insulating medium layer; In described second pair of MEMS fixed beam structure, the connecting line below the second clamped beam is coated with insulating medium layer; In fixed beam structure in described MEMS fixed beam structure condenser type power sensor, the sensing electrode below the 3rd clamped beam and output co-planar waveguide holding wire are coated with insulating medium layer.
The material of described substrate is GaAs.Described isolation resistance be tantalum nitride with the material of terminal build-out resistor.The material of described insulating medium layer is silicon nitride.
Based on the preparation method of the phase-locked loop of micromechanics clamped beam condenser type power sensor, comprise the following steps:
1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
2) photoetching: remove the photoresist that will retain tantalum nitride place;
3) sputter tantalum nitride, its thickness is 1 μm;
4) peel off;
5) photoetching: remove the photoresist that will retain the place of ground floor gold;
6) evaporate ground floor gold, its thickness is 0.3 μm;
7) peel off, begin to take shape co-planar waveguide holding wire and ground wire, asymmetric coplanar stripline holding wire and ground wire, the anchor district of MEMS clamped beam, sensing electrode, sensing electrode press welding block, export press welding block and connecting line
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
10) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on co-planar waveguide holding wire below MEMS clamped beam;
11) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer determines the distance of beam and silicon nitride medium layer place plane; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
12) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
13) photoetching: remove and will electroplate local photoresist;
14) electrogilding, its thickness is 2 μm;
15) photoresist is removed: remove and do not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, forms co-planar waveguide holding wire, ground wire, asymmetric coplanar stripline holding wire, MEMS clamped beam, press welding block and metal contact wires;
17) by this gallium arsenide substrate thinning back side to 100 μm;
18) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
Beneficial effect: the phase-locked loop based on micromechanics clamped beam condenser type power sensor of the present invention and preparation method, close device by merit and the output signal of input signal and voltage controlled oscillator can be carried out Vector modulation, detected the watt level of the signal after synthesis by MEMS fixed beam structure condenser type power sensor, be directly reflected in the change of the 3rd electric capacity between clamped beam and sensing electrode.Replace the variable capacitance of condenser type voltage controlled oscillator with the 3rd electric capacity between clamped beam and sensing electrode of MEMS fixed beam structure condenser type power sensor, control the output signal frequency of voltage controlled oscillator.Phase difference between such reference signal and output signal just can change the size of voltage controlled oscillator variable capacitance, thus controls the frequency that outputs signal, and then by object that the feedback effect of voltage controlled oscillator makes whole circuit reach phase-locked.The present invention not only structure is simple, novel, be easy to modularization, integrated, and the input of voltage controlled oscillator is direct current signal, eliminates loop filter relative to traditional phase lock circuitry, has the advantage with GaAs single-chip microwave integration circuit compatibility.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is that the A-A ' of Fig. 1 is to cutaway view;
Fig. 3 is that the B-B ' of Fig. 1 is to cutaway view.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further described.
As shown in Figure 1: based on the phase-locked loop of micromechanics clamped beam condenser type power sensor, comprise substrate 1 that material is GaAs, co-planar waveguide holding wire 2 is on substrate 1 set, ground wire 3, two pairs of MEMS fixed beam structures, merit close device, terminal build-out resistor 9 and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator.Described substrate 1 defines an axis of symmetry:
Described ground wire 3 is formed symmetrical centered by the axis of symmetry, comprises the two side ground wires and a center ground wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two side ground wires respectively there is the breach that symmetrical; Described co-planar waveguide holding wire is formed symmetrical centered by the axis of symmetry, comprises two the input co-planar waveguide holding wires and an output co-planar waveguide holding wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with terminal build-out resistor 9 between described output co-planar waveguide holding wire and side ground wire, its material is tantalum nitride, can absorb the signal power transmitted by input co-planar waveguide holding wire completely, and be converted to heat;
Described merit is closed device and is formed symmetrical centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires 8 and isolation resistance 7 that are symmetrically distributed in this axis of symmetry; The input of two described asymmetric coplanar stripline holding wires 8 is isolated by the isolation resistance 7 that material is tantalum nitride, and inputs co-planar waveguide holding wire with two respectively and be connected; The described output co-planar waveguide holding wire of the connected rear access of output of two described asymmetric coplanar stripline holding wires 8; The effect that merit closes device is that the signal of input co-planar waveguide holding wire transmission is carried out Vector modulation, and by the intracellular signaling after synthesis to MEMS fixed beam structure condenser type power sensor;
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively, described first pair of MEMS fixed beam structure comprises two the first clamped beams 41 of relative symmetry axisymmetrical, described two the first clamped beams 41 are respectively across above the input co-planar waveguide holding wire of corresponding side, the two ends of described first clamped beam 41 are fixed on the side ground wire of center ground wire and the same side respectively by anchor district 5, the input co-planar waveguide holding wire of the corresponding below of described first clamped beam 41 is coated with the insulating medium layer 6 that material is silicon nitride, the input co-planar waveguide holding wire of the first clamped beam 41 and below forms building-out capacitor, the design of this building-out capacitor can reduce the size that merit closes device while realizing circuit impedance matching, improve integrated level, described second pair of MEMS fixed beam structure comprises two the second clamped beams 42 of relative symmetry axisymmetrical, and described two the second clamped beams 42 connect the breach two ends of the side ground wire of the same side respectively by anchor district 5, isolated ground wire couples together by two pairs of MEMS clamped beams symmetrically.
Described MEMS fixed beam structure condenser type power sensor, comprises the 3rd fixed beam structure, two sensing electrodes, 10, two press welding blocks 12, the 3rd clamped beam 43 in described 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam 43 and is connected with the side ground wire of both sides respectively by anchor district 5, described two sensing electrodes 10 are all symmetrically distributed in and export between co-planar waveguide holding wire and respective side ground wire below the 3rd fixed beam structure, sensing electrode 10 below 3rd clamped beam 43 and output co-planar waveguide holding wire are coated with the insulating medium layer 6 that material is silicon nitride, variable capacitance is formed between described sensing electrode 10 and the 3rd clamped beam 43 above it, when output co-planar waveguide holding wire below the 3rd clamped beam 43 has a transmission of signal power, electric capacity between 3rd clamped beam 43 and sensing electrode 10 returns along with receiving the change of rear power and changes, described two sensing electrodes 10 are connected with wherein same press welding block 12 each via a connecting line 11, two connecting lines 11 be connected with two sensing electrodes 10 are each passed through the breach of the side ground wire of both sides, and the connecting line being positioned at below the 3rd clamped beam i.e. indentation, there is coated with the insulating medium layer 6 that material is silicon nitride, another press welding block 12 is connected with a wherein side ground wire by a connecting line 11,
Two inputs of this external capacitor bikini voltage controlled oscillator, originally for accessing variable capacitance, are now connected with described two press welding blocks 12 by two inputs of described external capacitor bikini voltage controlled oscillator respectively; The variable capacitance realizing the variable capacitance formed between sensing electrode 10 and the clamped beam above it 4 to replace condenser type voltage controlled oscillator directly accesses voltage controlled oscillator and controls its output signal frequency, and the input variable of voltage controlled oscillator is DC quantity, eliminate the loop filter of conventional phase locked loops;
The output signal of described external capacitor bikini voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal; Control the output signal frequency of voltage controlled oscillator.And then again feed back to co-planar waveguide holding wire by voltage controlled oscillator, until whole device is stablized, finally reach the object that whole circuit is phase-locked.
During work, co-planar waveguide holding wire is for realizing the transmission of microwave signal, close device by merit and the output signal of input signal and voltage controlled oscillator is carried out Vector modulation, the output that merit closes device is connected to MEMS fixed beam structure condenser type power sensor, detected the watt level of the signal after synthesis by MEMS fixed beam structure condenser type power sensor, be directly reflected in the change of electric capacity between the 3rd clamped beam 43 and sensing electrode 10.Be applied to external capacitor bikini voltage controlled oscillator with the electric capacity between the 3rd clamped beam 43 of MEMS fixed beam structure condenser type power sensor and sensing electrode 10 as a variable capacitance, control the output signal frequency of voltage controlled oscillator.Phase difference between such reference signal and output signal just can change the size of voltage controlled oscillator variable capacitance, thus controls the frequency that outputs signal, and then by object that the feedback effect of voltage controlled oscillator makes whole circuit reach phase-locked.
Preparation method based on the phase-locked loop of micromechanics clamped beam condenser type power sensor comprises the following steps:
1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
2) photoetching: remove the photoresist that will retain tantalum nitride place;
3) sputter tantalum nitride, its thickness is 1 μm;
4) peel off;
5) photoetching: remove the photoresist that will retain the place of ground floor gold;
6) evaporate ground floor gold, its thickness is 0.3 μm;
7) peel off, begin to take shape co-planar waveguide holding wire and ground wire, asymmetric coplanar stripline holding wire and ground wire, the anchor district of MEMS clamped beam, sensing electrode, sensing electrode press welding block, export press welding block and connecting line
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technique (PECVD) growth
thick silicon nitride medium layer;
10) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on co-planar waveguide holding wire below MEMS clamped beam;
11) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer determines the distance of beam and silicon nitride medium layer place plane; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
12) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
13) photoetching: remove and will electroplate local photoresist;
14) electrogilding, its thickness is 2 μm;
15) photoresist is removed: remove and do not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, forms co-planar waveguide holding wire, ground wire, asymmetric coplanar stripline holding wire, MEMS clamped beam, press welding block and metal contact wires;
17) by this gallium arsenide substrate thinning back side to 100 μm;
18) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
The above is only the preferred embodiment of the present invention; be noted that for those skilled in the art; under the premise without departing from the principles of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. based on the phase-locked loop of micromechanics clamped beam condenser type power sensor, it is characterized in that: comprise substrate (1), the co-planar waveguide holding wire (2) be arranged on substrate (1), ground wire (3), the two pairs of MEMS fixed beam structures, merits close device, terminal build-out resistor (9) and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator, at the upper definition axis of symmetry of described substrate (1);
Described ground wire (3) is formed symmetrical centered by the axis of symmetry, comprises the two side ground wires and a center ground wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two side ground wires respectively there is the breach that symmetrical; Described co-planar waveguide holding wire (2) is formed symmetrical centered by the axis of symmetry, comprises two the input co-planar waveguide holding wires and an output co-planar waveguide holding wire be positioned on the axis of symmetry that are symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Terminal build-out resistor (9) is provided with between described output co-planar waveguide holding wire and side ground wire;
Described merit is closed device and is formed symmetrical centered by the axis of symmetry, comprises two the asymmetric coplanar stripline holding wires (8) and isolation resistance (7) that are symmetrically distributed in this axis of symmetry; The input of two described asymmetric coplanar stripline holding wires (8) by isolation resistance (7) isolation, and inputs co-planar waveguide holding wire with two respectively and is connected; The described output co-planar waveguide holding wire of the connected rear access of output of two described asymmetric coplanar stripline holding wires (8);
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively; Described first pair of MEMS fixed beam structure comprises two the first clamped beams (41) of relative symmetry axisymmetrical, described two the first clamped beams (41) are respectively across above the input co-planar waveguide holding wire of corresponding side, and the two ends of described first clamped beam (41) are fixed on the side ground wire of center ground wire and the same side respectively by anchor district (5); Described second pair of MEMS fixed beam structure comprises two the second clamped beams (42) of relative symmetry axisymmetrical, and described two the second clamped beams (42) connect the breach two ends of the side ground wire of the same side respectively by anchor district (5);
Described MEMS fixed beam structure condenser type power sensor, comprises the 3rd fixed beam structure, two sensing electrodes (10), two press welding blocks (12); The 3rd clamped beam (43) in described 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam (43) and is connected with the side ground wire of both sides respectively by anchor district (5); Described two sensing electrodes (10) are all symmetrically distributed in and export between co-planar waveguide holding wire and respective side ground wire below the 3rd fixed beam structure, form variable capacitance between described sensing electrode (10) and the 3rd clamped beam (43) above it; Described two sensing electrodes (10) are connected with wherein same press welding block (12) each via a connecting line (11), and two connecting lines (11) be connected with two sensing electrodes (10) are each passed through the breach of the side ground wire of both sides; Another press welding block (12) is connected with a wherein side ground wire by a connecting line (11);
Two inputs of described external capacitor bikini voltage controlled oscillator are connected with described two press welding blocks (12) respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal.
2. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, its spy is: in described first pair of MEMS fixed beam structure, and the input co-planar waveguide holding wire of the corresponding below of the first clamped beam (41) is coated with insulating medium layer (6); In described second pair of MEMS fixed beam structure, the connecting line (11) of the second clamped beam (42) below is coated with insulating medium layer (6); In the 3rd fixed beam structure in described MEMS fixed beam structure condenser type power sensor, the sensing electrode (10) of the 3rd clamped beam (43) below and output co-planar waveguide holding wire are coated with insulating medium layer (6).
3. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, is characterized in that: the material of described substrate (1) is GaAs.
4. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, is characterized in that: the material of described isolation resistance (7) and terminal build-out resistor (9) is tantalum nitride.
5. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 2, is characterized in that: the material of insulating medium layer (6) is silicon nitride.
6., based on the preparation method of the phase-locked loop of micromechanics clamped beam condenser type power sensor, comprise the following steps:
1) gallium arsenide substrate is prepared: the semi-insulating GaAs substrate selecting extension, wherein extension N
+the doping content of GaAs is 10
18cm
-3, its square resistance is 100 ~ 130 Ω/;
2) photoetching: remove the photoresist that will retain tantalum nitride place;
3) sputter tantalum nitride, its thickness is 1 μm;
4) peel off;
5) photoetching: remove the photoresist that will retain the place of ground floor gold;
6) evaporate ground floor gold, its thickness is 0.3 μm;
7) peel off, begin to take shape co-planar waveguide holding wire and ground wire, asymmetric coplanar stripline holding wire and ground wire, the anchor district of MEMS clamped beam, sensing electrode, sensing electrode press welding block, export press welding block and connecting line
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technique
thick silicon nitride medium layer;
10) photoetching etch nitride silicon dielectric layer: be retained in the silicon nitride on co-planar waveguide holding wire below MEMS clamped beam;
11) deposit photoetching polyimide sacrificial layer: apply 1.6 μm of thick polyimide sacrificial layer in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer determines the distance of beam and silicon nitride medium layer place plane; Photoetching polyimide sacrificial layer, only retains the sacrifice layer below clamped beam;
12) evaporate titanium/gold/titanium, its thickness is
the down payment of evaporation for electroplating;
13) photoetching: remove and will electroplate local photoresist;
14) electrogilding, its thickness is 2 μm;
15) photoresist is removed: remove and do not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, corrosion down payment, forms co-planar waveguide holding wire, ground wire, asymmetric coplanar stripline holding wire, MEMS clamped beam, press welding block and metal contact wires;
17) by this gallium arsenide substrate thinning back side to 100 μm;
18) discharge polyimide sacrificial layer: developer solution soaks, remove the polyimide sacrificial layer under MEMS clamped beam, deionized water soaks slightly, and absolute ethyl alcohol dewaters, and volatilizees, dry under normal temperature.
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| US20090201009A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
| CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
| CN103116072A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system |
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- 2013-06-19 CN CN201310243929.2A patent/CN103338039B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090201009A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
| CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
| CN103116072A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system |
Non-Patent Citations (1)
| Title |
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| MEMS微波功率传感器的研究与进展;范小燕等;《微波学报》;20050430;63~70 * |
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