CN103338039A - Phase-locked loop based on micro-machinery clamped beam capacitance type power sensor and manufacture method thereof - Google Patents
Phase-locked loop based on micro-machinery clamped beam capacitance type power sensor and manufacture method thereof Download PDFInfo
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- CN103338039A CN103338039A CN2013102439292A CN201310243929A CN103338039A CN 103338039 A CN103338039 A CN 103338039A CN 2013102439292 A CN2013102439292 A CN 2013102439292A CN 201310243929 A CN201310243929 A CN 201310243929A CN 103338039 A CN103338039 A CN 103338039A
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Abstract
The invention discloses a phase-locked loop based on micro-machinery clamped beam capacitance type power sensor and a manufacture method thereof. The phase-locked loop comprises a substrate, a coplanar waveguide signal line arranged on the substrate, two pairs of MEMS (Micro-electromechanical Systems) clamped beam structures, a power combiner, a terminal matched resistor and an MEMS clamped beam capacitance type power sensor, as well as a connected capacitance three-point type voltage-controlled oscillator. The capacitance of the variable capacitor of the voltage-controlled oscillator can be changed through the phase difference between the reference signal and the output signal of the voltage-controlled oscillator, the frequency of the output signal can be controlled, and the purpose of phase-lock of the whole circuit through the feedback function of the voltage-controlled oscillator can be achieved. According to the invention, the structure is simple and novel; the realization of modularization and integration is convenient; the input end that controls the voltage-controlled oscillator is direct current; compared with a conventional phase-locked circuit, a loop filter is saved, and the advantage of compatibility with the gallium arsenide monolithic microwave integrated circuit is obtained.
Description
Technical field
The present invention relates to microelectromechanical systems (MEMS), especially based on the phase-locked loop of micromechanics clamped beam condenser type power sensor.
Background technology
Phase-locked loop is the automatic control control system of a closed loop, can make output signal and input signal synchronous on frequency and phase place.In synchronous regime, the phase difference between output signal and the input signal is zero or keeps constant.It merges automatic frequency control and automatic phase control technology, is widely used in the systems such as modulation of frequency synthesis, clock recovery and signal.Present stage mainly contains analog phase-locked look, digital-to-analogue and mixes three kinds of phase-locked loop and all-digital phase-locked loops, and they all have three basic parts: phase detectors, loop filter and voltage controlled oscillator.
Microelectromechanical systems (MEMS) but refer to batch making, integrate micro mechanism, microsensor, miniature actuator and signal processing and control circuit, until interface, communicate by letter and microdevice or the system of power supply etc.In recent years, along with the fast development of MEMS technology, how to utilize the MEMS technology and the measurement of the phase information of high-frequency signal is become the focus of people's research.Phase-locked loop is requisite control system in measuring.
Summary of the invention
The technical problem that solves: according to the deficiencies in the prior art, the invention provides a kind of phase-locked loop based on micromechanics clamped beam condenser type power sensor, solve technical problem phase-locked when the high-frequency signal phase information measured.
Technical scheme: for solving the problems of the technologies described above, the present invention by the following technical solutions:
Phase-locked loop based on micromechanics clamped beam condenser type power sensor, co-planar waveguide holding wire, ground wire, two pairs of MEMS fixed beam structures, merits of comprising substrate, being arranged on the substrate are closed device, terminal build-out resistor and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator, at axis of symmetry of described substrate definition;
Described ground wire forms symmetrical distribution centered by the axis of symmetry, comprise two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; The breach that a symmetrical distribution is respectively arranged on described two side ground wires; Described co-planar waveguide holding wire forms symmetrical distribution centered by the axis of symmetry, comprise two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with the terminal build-out resistor between described output co-planar waveguide holding wire and the side ground wire;
Described merit is closed device and form symmetrical distribution centered by the axis of symmetry, comprises two the asymmetric coplanar striplines holding wires and the isolation resistance that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar striplines holding wires is isolated by isolation resistance, and links to each other with two input co-planar waveguide holding wires respectively; After linking to each other, the output of described two asymmetric coplanar striplines holding wires inserts described output co-planar waveguide holding wire;
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively; Described first pair of MEMS fixed beam structure comprises two first clamped beams of relative axis of symmetry symmetry, across above the input co-planar waveguide holding wire of respective side, the two ends of described first clamped beam are fixed on the side ground wire of center ground wire and the same side by the anchor district respectively described two first clamped beams respectively; Described second pair of MEMS fixed beam structure comprises two second clamped beams of relative axis of symmetry symmetry, and described two second clamped beams connect the breach two ends of the side ground wire of the same side respectively by the anchor district;
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes, two press welding blocks; The 3rd clamped beam in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam link to each other with the side ground wire of both sides by the anchor district respectively; Described two sensing electrodes are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, described sensing electrode with its above the 3rd clamped beam between form variable capacitance; Described two sensing electrodes link to each other by press welding block of a connecting line and its homonymy separately, and two connecting lines that link to each other with two sensing electrodes pass the breach of the side ground wire of both sides respectively; Described another press welding block links to each other with side ground wire wherein by connecting line;
Two inputs of described external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal;
In described first pair of MEMS fixed beam structure, be coated with insulating medium layer on the input co-planar waveguide holding wire of first clamped beam correspondence below; In described second pair of MEMS fixed beam structure, be coated with insulating medium layer on the connecting line of second clamped beam below; In the fixed beam structure in described MEMS fixed beam structure condenser type power sensor, be coated with insulating medium layer on the sensing electrode of the 3rd clamped beam below and the output co-planar waveguide holding wire.
The material of described substrate is GaAs.Described isolation resistance and the material terminal build-out resistor are tantalum nitride.The material of described insulating medium layer is silicon nitride.
Preparation method based on the phase-locked loop of micromechanics clamped beam condenser type power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
: evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
Beneficial effect: phase-locked loop and preparation method based on micromechanics clamped beam condenser type power sensor of the present invention, closing device by merit, the output signal of input signal and voltage controlled oscillator can be carried out vector synthetic, detect the watt level of the signal after synthetic by MEMS fixed beam structure condenser type power sensor, directly be reflected between the 3rd clamped beam and the sensing electrode on the changes in capacitance.Replace the variable capacitance of condenser type voltage controlled oscillator, the output signal frequency of control voltage controlled oscillator with electric capacity between the 3rd clamped beam of MEMS fixed beam structure condenser type power sensor and the sensing electrode.Phase difference between reference signal and the output signal just can change the size of voltage controlled oscillator variable capacitance like this, thereby controls output signal frequency, and then makes entire circuit reach phase-locked purpose by the feedback effect of voltage controlled oscillator.The present invention is not only simple in structure, novel, is easy to modularization, integrated, and the input of voltage controlled oscillator is direct current signal, has saved loop filter with respect to traditional phase lock circuitry, has the advantage with the GaAs single-chip microwave integration circuit compatibility.
Description of drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is that the A-A ' of Fig. 1 is to cutaway view;
Fig. 3 is that the B-B ' of Fig. 1 is to cutaway view.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explanation.
As shown in Figure 1: based on the phase-locked loop of micromechanics clamped beam condenser type power sensor, comprise that material is that the substrate 1 of GaAs, co-planar waveguide holding wire 2, ground wire 3, two pairs of MEMS fixed beam structures, the merits that are arranged on the substrate 1 are closed device, terminal build-out resistor 9 and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator.Define an axis of symmetry at described substrate 1:
Described ground wire 3 forms symmetrical distribution centered by the axis of symmetry, comprise two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; The breach that a symmetrical distribution is respectively arranged on described two side ground wires; Described co-planar waveguide holding wire forms symmetrical distribution centered by the axis of symmetry, comprise two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with terminal build-out resistor 9 between described output co-planar waveguide holding wire and the side ground wire, its material is tantalum nitride, can absorb the signal power by the transmission of input co-planar waveguide holding wire fully, and be converted to heat;
Described merit is closed device and form symmetrical distribution centered by the axis of symmetry, comprises two the asymmetric coplanar striplines holding wires 8 and the isolation resistance 7 that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar striplines holding wires 8 is isolation resistance 7 isolation of tantalum nitride by material, and links to each other with two input co-planar waveguide holding wires respectively; After linking to each other, the output of described two asymmetric coplanar striplines holding wires 8 inserts described output co-planar waveguide holding wire; The effect that merit is closed device is the signal that input co-planar waveguide holding wire transmits to be carried out vector synthesize, and the signal after will synthesizing is transmitted to MEMS fixed beam structure condenser type power sensor;
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively; Described first pair of MEMS fixed beam structure comprises two first clamped beams 41 of relative axis of symmetry symmetry, described two first clamped beams 41 are respectively across above the input co-planar waveguide holding wire of respective side, the two ends of described first clamped beam 41 are fixed on the side ground wire of center ground wire and the same side by anchor district 5 respectively, be coated with the insulating medium layer 6 that material is silicon nitride on the input co-planar waveguide holding wire of described first clamped beam 41 corresponding belows, the input co-planar waveguide holding wire of first clamped beam 41 and below constitutes building-out capacitor, the design of this building-out capacitor can be dwindled the size that merit is closed device when realizing the circuit impedance coupling, improve integrated level; Described second pair of MEMS fixed beam structure comprises two second clamped beams 42 of relative axis of symmetry symmetry, and described two second clamped beams 42 connect the breach two ends of the side ground wire of the same side respectively by anchor district 5; Two pairs of MEMS clamped beams couple together isolated ground wire symmetrically.
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes 10, two press welding blocks 12; The 3rd clamped beam 43 in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam 43 link to each other with the side ground wire of both sides by anchor district 5 respectively; Described two sensing electrodes 10 are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, be coated with the insulating medium layer 6 that material is silicon nitride on the sensing electrode 10 of the 3rd clamped beam 43 belows and the output co-planar waveguide holding wire, form variable capacitance between the 3rd clamped beam 43 of described sensing electrode 10 and its top, when the output co-planar waveguide holding wire of the 3rd clamped beam 43 belows had the transmission of signal power, the electric capacity between the 3rd clamped beam 43 and the sensing electrode 10 returned along with the variation of receiving back power and changes; Described two sensing electrodes 10 link to each other by press welding block 12 of a connecting line 11 and its homonymy separately, two connecting lines 11 that link to each other with two sensing electrodes 10 pass the breach of the side ground wire of both sides respectively, and are positioned on the connecting line that the 3rd clamped beam below is indentation, there and are coated with the insulating medium layer 6 that material is silicon nitride; Described another press welding block 12 links to each other with side ground wire wherein by a connecting line 11;
Two inputs of described external capacitor bikini voltage controlled oscillator are used for inserting variable capacitance originally, and now two inputs with this external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks 12 respectively; The variable capacitance of formed variable capacitance replacement condenser type voltage controlled oscillator directly inserts voltage controlled oscillator and controls its output signal frequency between the clamped beam 4 of realization with sensing electrode 10 and its top, and the input variable of voltage controlled oscillator is DC quantity, has saved the loop filter of conventional phase locked loops;
The output signal of described external capacitor bikini voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal; The output signal frequency of control voltage controlled oscillator.And then feed back to the co-planar waveguide holding wire again by voltage controlled oscillator, and stable until whole device, finally reach the phase-locked purpose of entire circuit.
During work, the co-planar waveguide holding wire is used for realizing the transmission of microwave signal, closing device by merit, that the output signal of input signal and voltage controlled oscillator is carried out vector is synthetic, the output that merit is closed device is connected to MEMS fixed beam structure condenser type power sensor, detect the watt level of the signal after synthetic by MEMS fixed beam structure condenser type power sensor, directly be reflected between the 3rd clamped beam 43 and the sensing electrode 10 on the changes in capacitance.Be applied to external capacitor bikini voltage controlled oscillator with the 3rd clamped beam 43 of MEMS fixed beam structure condenser type power sensor and the electric capacity between the sensing electrode 10 as a variable capacitance, the output signal frequency of control voltage controlled oscillator.Phase difference between reference signal and the output signal just can change the size of voltage controlled oscillator variable capacitance like this, thereby controls output signal frequency, and then makes entire circuit reach phase-locked purpose by the feedback effect of voltage controlled oscillator.
Preparation method based on the phase-locked loop of micromechanics clamped beam condenser type power sensor may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with plasma-enhanced chemical vapour deposition technology (PECVD) growth
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
: evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
The above only is preferred implementation of the present invention; be noted that for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (6)
1. based on the phase-locked loop of micromechanics clamped beam condenser type power sensor, it is characterized in that: co-planar waveguide holding wire (2), ground wire (3), two pairs of MEMS fixed beam structures, merits of comprise substrate (1), being arranged on the substrate (1) are closed device, terminal build-out resistor (9) and MEMS fixed beam structure condenser type power sensor, and external capacitor bikini voltage controlled oscillator, at axis of symmetry of described substrate (1) definition;
Described ground wire (3) forms symmetrical distribution centered by the axis of symmetry, comprise two side ground wires and a center ground wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; The breach that a symmetrical distribution is respectively arranged on described two side ground wires; Described co-planar waveguide holding wire (2) forms symmetrical distribution centered by the axis of symmetry, comprise two input co-planar waveguide holding wires and an output co-planar waveguide holding wire that is positioned on the axis of symmetry of being symmetrically distributed in this axis of symmetry; Described two input co-planar waveguide holding wires are respectively as the input of input signal and feedback signal; Be provided with terminal build-out resistor (9) between described output co-planar waveguide holding wire and the side ground wire;
Described merit is closed device and form symmetrical distribution centered by the axis of symmetry, comprises two the asymmetric coplanar striplines holding wires (8) and the isolation resistance (7) that are symmetrically distributed in this axis of symmetry; The input of described two asymmetric coplanar striplines holding wires (8) is isolated by isolation resistance (7), and links to each other with two input co-planar waveguide holding wires respectively; After linking to each other, the output of described two asymmetric coplanar striplines holding wires (8) inserts described output co-planar waveguide holding wire;
Described two pairs of MEMS fixed beam structures are designated as first pair of fixed beam structure and second pair of fixed beam structure respectively; Described first pair of MEMS fixed beam structure comprises two first clamped beams (41) of relative axis of symmetry symmetry, across above the input co-planar waveguide holding wire of respective side, the two ends of described first clamped beam (41) are fixed on the side ground wire of center ground wire and the same side by anchor district (5) respectively described two first clamped beams (41) respectively; Described second pair of MEMS fixed beam structure comprises two second clamped beams (42) of relative axis of symmetry symmetry, and described two second clamped beams (42) connect the breach two ends of the side ground wire of the same side respectively by anchor district (5);
Described MEMS fixed beam structure condenser type power sensor comprises the 3rd fixed beam structure, two sensing electrodes (10), two press welding blocks (12); The 3rd clamped beam (43) in described the 3rd fixed beam structure is positioned at the top of described output co-planar waveguide holding wire, the two ends of the 3rd clamped beam (43) link to each other with the side ground wire of both sides by anchor district (5) respectively; Described two sensing electrodes (10) are all below the 3rd fixed beam structure and be symmetrically distributed between output co-planar waveguide holding wire and the respective side ground wire, described sensing electrode (10) with its above the 3rd clamped beam (43) between form variable capacitance; Described two sensing electrodes (10) link to each other with a press welding block of its homonymy (12) by a connecting line (11) separately, and two connecting lines (11) that link to each other with two sensing electrodes (10) pass the breach of the side ground wire of both sides respectively; Described another press welding block (12) links to each other with side ground wire wherein by a connecting line (11);
Two inputs of described external capacitor bikini voltage controlled oscillator link to each other with described two press welding blocks (12) respectively; The output signal of described external voltage controlled oscillator is connected to described input co-planar waveguide holding wire as feedback signal.
2. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, its spy is: in described first pair of MEMS fixed beam structure, be coated with insulating medium layer (6) on the input co-planar waveguide holding wire of the corresponding below of first clamped beam (41); In described second pair of MEMS fixed beam structure, be coated with insulating medium layer (6) on the connecting line (11) of second clamped beam (42) below; In the 3rd fixed beam structure in described MEMS fixed beam structure condenser type power sensor, be coated with insulating medium layer (6) on the sensing electrode (10) of the 3rd clamped beam (43) below and the output co-planar waveguide holding wire.
3. the phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: the material of described substrate (1) is GaAs.
4. a kind of phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 1, it is characterized in that: the material of described isolation resistance (7) and terminal build-out resistor (9) is tantalum nitride.
5. a kind of phase-locked loop based on micromechanics clamped beam condenser type power sensor according to claim 2, it is characterized in that: the material of insulating medium layer (6) is silicon nitride.
6. based on the preparation method of the phase-locked loop of micromechanics clamped beam condenser type power sensor, may further comprise the steps:
1) prepares gallium arsenide substrate: select the semi-insulating GaAs substrate of extension for use, wherein extension N
+The doping content of GaAs is 10
18Cm
-3, its square resistance is 100～130 Ω/;
2) photoetching: removal will keep the photoresist in tantalum nitride place;
3) sputter tantalum nitride, its thickness are 1 μ m;
4) peel off;
5) photoetching: removal will keep the photoresist in the place of ground floor gold;
6) evaporation ground floor gold, its thickness is 0.3 μ m;
7) peel off, begin to take shape anchor district, the sensing electrode of CPW holding wire and ground wire, ACPS holding wire and ground wire, MEMS clamped beam, press welding block, output press welding block and the connecting line of sensing electrode
8) anti-carve tantalum nitride, form terminal resistance and isolation resistance, its square resistance is 25 Ω/;
9) deposit silicon nitride: with the growth of plasma-enhanced chemical vapour deposition technology
Thick silicon nitride medium layer;
10) photoetching and etch silicon nitride dielectric layer: be retained in the silicon nitride on the CPW holding wire of MEMS clamped beam below;
11) deposit and photoetching polyimide sacrificial layer: apply the thick polyimide sacrificial layer of 1.6 μ m in gallium arsenide substrate, require to fill up pit, the thickness of polyimide sacrificial layer has determined the distance on beam and plane, silicon nitride medium layer place; The photoetching polyimide sacrificial layer only keeps the sacrifice layer of clamped beam below;
12) evaporation titanium/gold/titanium, its thickness is
Evaporation is used for the down payment of plating;
13) photoetching: removal will be electroplated local photoresist;
14) electrogilding, its thickness are 2 μ m;
15) remove photoresist: removing does not need to electroplate local photoresist;
16) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW holding wire, ground wire, ACPS holding wire, MEMS clamped beam, press welding block and metal connecting line;
17) with this gallium arsenide substrate thinning back side to 100 μ m;
18) discharge polyimide sacrificial layer: developer solution soaks, and removes the polyimide sacrificial layer under the MEMS clamped beam, and deionized water soaks slightly, and the absolute ethyl alcohol dehydration is volatilized under the normal temperature, dries.
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| US20090201009A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
| CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
| CN103116072A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090201009A1 (en) * | 2008-02-11 | 2009-08-13 | Qualcomm Mems Technologies, Inc. | Methods for measurement and characterization of interferometric modulators |
| CN103048536A (en) * | 2013-01-18 | 2013-04-17 | 东南大学 | Online microwave frequency detector and detecting method thereof based on clamped beam and direct-type power sensor |
| CN103116072A (en) * | 2013-01-18 | 2013-05-22 | 东南大学 | Microwave detecting system based on clamped beams and indirect power sensors and detecting method of microwave detecting system |
Non-Patent Citations (1)
| Title |
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| 范小燕等: "MEMS微波功率传感器的研究与进展", 《微波学报》 * |
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