AU2001294760A1 - Degenerative load temperature correction for charge pumps - Google Patents

Degenerative load temperature correction for charge pumps

Info

Publication number
AU2001294760A1
AU2001294760A1 AU2001294760A AU9476001A AU2001294760A1 AU 2001294760 A1 AU2001294760 A1 AU 2001294760A1 AU 2001294760 A AU2001294760 A AU 2001294760A AU 9476001 A AU9476001 A AU 9476001A AU 2001294760 A1 AU2001294760 A1 AU 2001294760A1
Authority
AU
Australia
Prior art keywords
charge pump
output
pump circuit
circuit
vco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001294760A
Inventor
Rupinder Bains
Daniel Elmhurst
Binh Ngo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU2001294760A1 publication Critical patent/AU2001294760A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
  • Dc-Dc Converters (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Fats And Perfumes (AREA)
  • Stabilization Of Oscillater, Synchronisation, Frequency Synthesizers (AREA)
  • Control Of Electrical Variables (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Treatment Of Sludge (AREA)
  • Pipe Accessories (AREA)

Abstract

A regulator circuit to control the output of a charge pump circuit, to reduce the effects of operating temperature and process variations on available output current from the charge pump circuit. A predetermined fraction of the output voltage of the charge pump circuit is fed back to the input of a differential amplifier, which compares it to a reference voltage. The output of the differential amplifier feeds a voltage controlled oscillator (VCO), which in turn generates a clock signal that is used to drive the charge pump circuit. The normal temperature characteristics of this configuration cause the output of the charge pump circuit to degrade with temperature changes. The regulator circuit can be placed between the differential amplifier and the VCO to adjust the voltage driving the VCO. In one embodiment, a biasing resistor with a negative temperature coefficient can be used in the regulator circuit to offset the normal effects of temperature on the circuit. In another embodiment, multiple such resistors can be selectable with programmable logic, so that process variations during manufacture can be compensated for by selecting the resistor value that most closely provides optimal biasing.
AU2001294760A 2000-09-27 2001-09-25 Degenerative load temperature correction for charge pumps Abandoned AU2001294760A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/670,850 US6356062B1 (en) 2000-09-27 2000-09-27 Degenerative load temperature correction for charge pumps
US09/670,850 2000-09-27
PCT/US2001/030156 WO2002027903A2 (en) 2000-09-27 2001-09-25 Degenerative load temperature correction for charge pumps

Publications (1)

Publication Number Publication Date
AU2001294760A1 true AU2001294760A1 (en) 2002-04-08

Family

ID=24692146

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001294760A Abandoned AU2001294760A1 (en) 2000-09-27 2001-09-25 Degenerative load temperature correction for charge pumps

Country Status (9)

Country Link
US (1) US6356062B1 (en)
EP (1) EP1323226B1 (en)
KR (1) KR100548910B1 (en)
CN (1) CN1230969C (en)
AT (1) ATE431008T1 (en)
AU (1) AU2001294760A1 (en)
DE (1) DE60138633D1 (en)
TW (1) TW538574B (en)
WO (1) WO2002027903A2 (en)

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US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
JP3688689B2 (en) * 2003-04-22 2005-08-31 株式会社東芝 DC-DC converter
US7719343B2 (en) 2003-09-08 2010-05-18 Peregrine Semiconductor Corporation Low noise charge pump method and apparatus
US7064529B2 (en) * 2003-09-17 2006-06-20 Atmel Corporation Dual stage voltage regulation circuit
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7205805B1 (en) 2004-11-02 2007-04-17 Western Digital Technologies, Inc. Adjusting power consumption of digital circuitry relative to critical path circuit having the largest propagation delay error
US7129763B1 (en) 2004-11-08 2006-10-31 Western Digital Technologies, Inc. Adjusting power consumption of digital circuitry by generating frequency error representing error in propagation delay
CN101095275B (en) * 2004-12-30 2010-06-16 Nxp股份有限公司 Monitoring the temperature dependence of the external capacitors of a charge pump and improved charge pumps based thereon
US20060181340A1 (en) * 2005-02-17 2006-08-17 Zywyn Corporation Regulating charge pump
KR100752643B1 (en) * 2005-03-14 2007-08-29 삼성전자주식회사 Adaptive input voltage controlled voltage booster
JP2007027760A (en) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd High density nonvolatile memory array and manufacturing method
US7221138B2 (en) * 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7486060B1 (en) 2006-03-30 2009-02-03 Western Digital Technologies, Inc. Switching voltage regulator comprising a cycle comparator for dynamic voltage scaling
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
US7551383B1 (en) 2006-06-28 2009-06-23 Western Digital Technologies, Inc. Adjusting voltage delivered to disk drive circuitry based on a selected zone
DE102006036546A1 (en) * 2006-08-04 2008-02-21 Qimonda Flash Gmbh & Co. Kg Capacitance charging current limiting device, charge pumping arrangement, method for limiting a charging current to a charge pump and method for limiting the charging current to a capacitor
US7330019B1 (en) 2006-10-31 2008-02-12 Western Digital Technologies, Inc. Adjusting on-time for a discontinuous switching voltage regulator
US7733189B1 (en) 2007-09-14 2010-06-08 Western Digital Technologies, Inc. Oscillator comprising foldover detection
US7944277B1 (en) * 2008-01-04 2011-05-17 Marvell International Ltd. Circuit and methods of adaptive charge-pump regulation
US8085020B1 (en) 2008-06-13 2011-12-27 Western Digital Technologies, Inc. Switching voltage regulator employing dynamic voltage scaling with hysteretic comparator
JP5072731B2 (en) * 2008-06-23 2012-11-14 株式会社東芝 Constant voltage boost power supply
US9660590B2 (en) 2008-07-18 2017-05-23 Peregrine Semiconductor Corporation Low-noise high efficiency bias generation circuits and method
JP2011528870A (en) 2008-07-18 2011-11-24 ペレグリン セミコンダクター コーポレーション Low noise high efficiency bias generation circuit and method
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US8120412B2 (en) * 2009-08-07 2012-02-21 Freescale Semiconductor, Inc. Voltage boosting system with slew rate control and method thereof
US8937404B1 (en) 2010-08-23 2015-01-20 Western Digital Technologies, Inc. Data storage device comprising dual mode independent/parallel voltage regulators
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8686787B2 (en) 2011-05-11 2014-04-01 Peregrine Semiconductor Corporation High voltage ring pump with inverter stages and voltage boosting stages
US9264053B2 (en) * 2011-01-18 2016-02-16 Peregrine Semiconductor Corporation Variable frequency charge pump
TWI481163B (en) 2012-02-24 2015-04-11 Novatek Microelectronics Corp Charge pump device and driving capability adjustment method thereof
CN103294094B (en) * 2012-03-02 2016-01-20 联咏科技股份有限公司 Charge-pump device and driving force method of adjustment thereof
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8867281B2 (en) * 2013-03-15 2014-10-21 Silicon Storage Technology, Inc. Hybrid chargepump and regulation means and method for flash memory device
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
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CN105337496B (en) * 2014-05-29 2019-06-25 展讯通信（上海）有限公司 Pulse frequency modulation circuit based on voltage controlled oscillator
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Also Published As

Publication number Publication date
KR100548910B1 (en) 2006-02-02
CN1466807A (en) 2004-01-07
US6356062B1 (en) 2002-03-12
WO2002027903A3 (en) 2002-08-29
KR20030043974A (en) 2003-06-02
ATE431008T1 (en) 2009-05-15
EP1323226A2 (en) 2003-07-02
DE60138633D1 (en) 2009-06-18
WO2002027903A2 (en) 2002-04-04
EP1323226B1 (en) 2009-05-06
TW538574B (en) 2003-06-21
CN1230969C (en) 2005-12-07

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