CN114400888B - Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit - Google Patents

Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit Download PDF

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Publication number
CN114400888B
CN114400888B CN202210087178.9A CN202210087178A CN114400888B CN 114400888 B CN114400888 B CN 114400888B CN 202210087178 A CN202210087178 A CN 202210087178A CN 114400888 B CN114400888 B CN 114400888B
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charge pump
voltage
circuit
transimpedance amplifier
driving circuit
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CN114400888A (en
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李响
蔡胜凯
董渊
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Wuxi Indie Microelectronics Technology Co Ltd
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Wuxi Indie Microelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The application discloses a self-adaptive hybrid linear modulation and frequency modulation charge pump circuit, which relates to the technical field of power supplies and comprises a charge pump driving circuit, a sampling negative feedback loop and a voltage-controlled oscillator, wherein the charge pump circuit works in a light load mode or a heavy load mode: when the charge pump circuit works in a light load mode, the voltage-controlled oscillator adjusts the working frequency of the charge pump driving circuit according to the high-voltage output voltage to carry out frequency modulation on the high-voltage output voltage, so that the loss of the charge pump is reduced, and the efficiency of the charge pump is improved; when the charge pump circuit works in a heavy-load mode, the voltage-controlled oscillator controls the working frequency of the charge pump driving circuit to be a constant value, and the sampling negative feedback loop adjusts the voltage difference of the input end of the charge pump driving circuit according to the high-voltage output voltage to carry out linear modulation of negative feedback on the high-voltage output voltage, so that EMC performance is improved; the charge pump circuit has better performance under different load conditions.

Description

Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit
Technical Field
The application relates to the technical field of power supplies, in particular to a self-adaptive hybrid linear modulation and frequency modulation charge pump circuit.
Background
In practical integrated circuit applications, there are many cases where a boost circuit is required, i.e., a circuit that can make the output voltage higher than the input voltage. Existing non-isolated BOOST circuits are generally divided into two categories, BOOST converters and charge pumps. BOOST converters and similar circuits utilize the magnetic energy storage capability of the inductor to sequentially BOOST the output voltage to a level higher than the input voltage, but such circuits have the disadvantage of requiring an inductor, requiring additional steps, being complex to operate and having additional expense, whether the inductor is packaged together with the integrated circuit directly using a separate inductor or using SIP. The charge pump circuit uses the capacitor to carry the charge step by step to obtain an output voltage higher than the input voltage. In most processes, the capacitor can be integrated directly into the chip, so that no additional process steps are required, and a charge pump is a better option in light load applications.
The prior art charge pump circuit is shown in FIGS. 1 and 2, FIG. 1 being a dickson chargeThe pump, fig. 2 is a double cross-coupled charge pump, but the output voltage of these conventional charge pumps is a fixed value and cannot be changed, if a larger current output capability is required, and the maximum voltage of the charge pump is limited, the flying capacitor C can only be increased FLY (fly capacitor), consuming tremendous on-chip area.
Disclosure of Invention
The present inventors have proposed a charge pump circuit with adaptive hybrid linear modulation and frequency modulation, which is designed to address the above-mentioned problems and technical needs, and the technical scheme of the present application is as follows:
a charge pump circuit of self-adaptive mixed linear modulation and frequency modulation comprises a charge pump drive circuit, a sampling negative feedback loop and a voltage-controlled oscillator, wherein the charge pump drive circuit internally comprises a flying capacitor, and an input power end of the charge pump drive circuit is connected with a high-voltage input voltage V IN The input power end of the charge pump driving circuit is also connected with the capacitor C 1 The output end of the charge pump driving circuit is used as the output end of the charge pump circuit to output high-voltage output voltage V CP The method comprises the steps of carrying out a first treatment on the surface of the The charge pump circuit works in a light load mode or a heavy load mode:
when the charge pump circuit works in the light load mode, the voltage-controlled oscillator outputs a voltage V according to the high voltage CP Regulating the operating frequency of the charge pump drive circuit to a high voltage output voltage V CP Frequency modulation is carried out;
when the charge pump circuit works in the heavy-load mode, the voltage-controlled oscillator controls the working frequency of the charge pump driving circuit to be a constant value, and the negative feedback loop is sampled according to the high-voltage output voltage V CP Regulating voltage difference V at input end of charge pump driving circuit IN -V HGND For high voltage output voltage V CP And performing negative feedback linear modulation.
The further technical proposal is that when the load current I OUT When reaching a preset threshold value and identifying that the charge pump circuit works in a heavy load mode, the voltage-controlled oscillator controls the working frequency of the charge pump driving circuit to be a constant value and to be the highest working frequency f FIX ；
When the load current I OUT When the operation of the charge pump circuit in the light load mode is marked and the operation frequency and the load current I of the charge pump driving circuit are controlled by the voltage-controlled oscillator when the operation frequency is smaller than the preset threshold value OUT Proportional to and lower than the highest operating frequency f FIX 。
The further technical proposal is that the sampling negative feedback loop comprises a first transimpedance amplifier, a current sampling circuit and a resistor R REG N-type switch tube M N1 And P-type switching tube M P4 The non-inverting input end of the first transimpedance amplifier acquires a reference current I REF The inverting input end of the first transimpedance amplifier is connected with the output end of the charge pump circuit through a current sampling circuit, and a P-type switch tube M in the current sampling circuit P1 The drain electrode of the first transimpedance amplifier is connected with the inverting input end of the first transimpedance amplifier, M P1 Source pass resistance R of (2) SNS An output end M connected with the charge pump circuit P1 The grid electrode of the first transimpedance amplifier is connected with the input power supply end of the charge pump driving circuit, and the inverting input end of the first transimpedance amplifier obtains the output voltage V for high voltage CP Sampling current I generated after current sampling SNS The method comprises the steps of carrying out a first treatment on the surface of the The output end of the first transimpedance amplifier is connected with an N-type switching tube M N1 Gate of M N1 Is grounded at the source of M N1 Is passed through the drain of resistor R REG An input power terminal connected to the charge pump driving circuit, M N1 The drain electrode of (C) is connected with a P-type switch tube M P4 Gate of M P4 The source of the (C) is connected with the input ground end HGND, M of the charge pump driving circuit P4 The drain of (2) is grounded.
The charge pump circuit further comprises a second transimpedance amplifier and a clamping circuit, wherein the inverting input end of the second transimpedance amplifier is connected with the current sampling circuit to obtain a high-voltage output voltage V CP Sampling current I generated after current sampling SNS The non-inverting input end of the second transimpedance amplifier acquires a resistor R REG A current value is applied; the output end of the second transimpedance amplifier is connected with the voltage input end of the voltage-controlled oscillator, and the clamping circuit is also connected with the voltage input end of the voltage-controlled oscillator to provide clamping voltage;
when the current difference value between the non-inverting input end and the inverting input end of the second transimpedance amplifier exceeds a difference value threshold value, and the output of the second transimpedance amplifier exceeds a clamping voltage, the voltage-controlled oscillator provides a constant-value working frequency for the charge pump driving circuit under the action of the clamping voltage;
when the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier does not exceed the difference threshold value, so that the output of the second transimpedance amplifier does not exceed the clamping voltage, the voltage-controlled oscillator provides the charge pump driving circuit with the load current I under the action of the output voltage of the second transimpedance amplifier OUT Related operating frequencies.
The charge pump circuit further comprises a P-type switch tube M forming a current mirror P2 And P-type switching tube M P3 Resistance R REG By M P3 Is connected with an input power end of a charge pump driving circuit, M P2 Source and M of (2) P3 The sources of the charge pump driving circuits are connected with the input power supply end of the charge pump driving circuit, M P2 And M P3 Is connected with the grid of M P3 Drain electrode of M P3 Drain connection resistance R of (2) REG ，M P2 Is connected with the non-inverting input end of the second transimpedance amplifier, wherein R SNS ＝α×R REG And α=x, X is the number of stages of pump set branches cascaded within the charge pump drive circuit.
The further technical proposal is that the sampling current obtained by the inverting input end of the second transimpedance amplifier isResistor R obtained from non-inverting input end of second transimpedance amplifier REG The upper current value isWhen the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier does not exceed the difference threshold value, so that the output of the second transimpedance amplifier does not exceed the clamping voltage, the voltage-controlled oscillator provides the charge pump driving circuit with the operating frequency of +.>C FLY Is the capacitance of the flying capacitor in the charge pump driving circuit, and DeltaV is the ideal high-voltage output V CP_ideal And the actual high voltage output voltage V CP The difference is +.>V TH Is the threshold voltage of the switching tube.
The beneficial technical effects of the application are as follows:
the application discloses a self-adaptive hybrid linear modulation and frequency modulation charge pump circuit, which adopts different modulation modes to stabilize output voltage under different load conditions, ensures constant working frequency and adopts a linear modulation mode during heavy load, thereby improving EMC performance; the frequency modulation mode is adopted in light load, so that the loss of the charge pump is reduced, the efficiency of the charge pump is improved, and the charge pump circuit has better performance under different load conditions. In addition, compared with the existing method for switching the working frequency by using the comparator, the method provided by the application has the advantages that the analog modulation working frequency is smoother in loop switching, the output voltage basically does not change in the switching process, the problem that the output voltage has larger ripple when the load is near the switching point is avoided, and the stability is improved.
Drawings
Fig. 1 is a circuit configuration of a conventional dickson charge pump.
Fig. 2 is a circuit configuration of a conventional double cross-coupled charge pump.
Fig. 3 is a circuit configuration diagram of an embodiment of the charge pump circuit of the present application.
Fig. 4 is a schematic diagram of a dual-loop modulation of the combination of linear modulation and frequency modulation of the charge pump circuit of the present application in a light load mode and a heavy load mode.
Detailed Description
The following describes the embodiments of the present application further with reference to the drawings.
The application discloses a self-adaptive hybrid linear modulation and frequency modulation charge pump circuit, please refer to the circuit diagram shown in fig. 3, which comprises a charge pump driving circuit, a sampling negative feedback loop and a voltage controlled oscillator VCO.
The charge pump driving circuit internally comprises a flying capacitor, and an input power supply end of the charge pump driving circuit is connected with a high-voltage input voltage V IN The input power end of the charge pump driving circuit is also connected with the capacitor C 1 The output end of the charge pump driving circuit is used as the output end of the charge pump circuit to output high-voltage output voltage V CP 。
In an open loop charge pump circuit, an ideal high voltage output V CP_ideal With high voltage input voltage V IN Is the voltage increment DeltaV, V generated by the charge pump driving circuit CP_ideal ＝V IN +ΔV. The output current capability of the charge pump circuit is I OUT ＝(V CP _ ideal -V CP )×C FLY ×f CP Wherein C FLY Is the capacitance value of the flying capacitor in the charge pump driving circuit, f CP Is oscillation frequency, output current capability I OUT And ideal high voltage output V CP_ideal And the actual high voltage output voltage V CP Is proportional to the voltage difference of (c). Therefore, if a large current needs to be output, the voltage increment Δv generated by the charge pump driving circuit needs to be increased.
In one embodiment, the charge pump driving circuit internally comprises pump group branches of X-stage cascade connection, and each pump group branch comprises two capacitance-equal flying capacitors connected through a cross coupling circuit. Each pump group branch is sequentially cascaded through a voltage input end and a voltage output end, and the voltage input end of the first-stage pump group branch is connected with an input power supply end of a charge pump driving circuit to obtain high-voltage input voltage V IN The voltage output end of the last stage pump group branch is used as the output end of the charge pump driving circuit to output high voltage output voltage V CP . The voltage of the flying capacitor of each stage pump group branch circuit is V when the flying capacitor is fully charged IN -V HGND Thus the voltage increment DeltaV generated by each pump group branch FLY ＝V IN -V HGND The whole charge pump driving circuit comprises an X-stage pump group branch,the voltage increment Δv=x×Δv generated by the entire charge pump driving circuit FLY Therefore, under the same capacitance area, larger current can be output by increasing the stage number X of the pump group branch circuit in the charge pump driving circuit.
But this presents another problem in that if the output load is empty, the output voltage will be high, which results in a difficult balancing of the charge pump supply capacity and the target output voltage. In order to solve the problem, the charge pump circuit of the application also comprises a sampling negative feedback loop which outputs a voltage V according to high voltage CP Regulating voltage difference V at input end of charge pump driving circuit IN -V HGND For high voltage output voltage V CP And performing negative feedback linear modulation. In addition, the charge pump circuit also comprises a zener diode D 1 Zener diode D 1 The cathode of the capacitor is connected with the input power end of the charge pump driving circuit, the anode is connected with the input ground end HGND of the charge pump driving circuit, and the voltage difference V is ensured IN -V HGND Will not exceed the zener diode D 1 Reverse breakdown voltage V of (2) ZENOR 。
The linear modulation mode can ensure high-voltage output voltage V in a larger load range CP But is less efficient at light loads. The losses of the charge pump itself include conduction losses, switching losses, charge redistribution losses, and punch-through losses, etc., which are the core of optimization. Assuming that the charge pump driving circuit uses a three-stage charge pump structure, the rated output voltage is 9V, and under the most heavy load, V IN -V HGND Approximately one zener diode clamp voltage, typically 5.5V. Under light load, V IN -V HGND Is 3V. If the linear modulation method is also used under light load, the driving voltage of the output driving stage is reduced, and the on-resistance is increased to some extent, so that the on-loss increases. Meanwhile, the working frequency of the charge pump is unchanged, and the driving voltage is reduced, so that the switching loss is reduced to a certain extent. However, the driving voltage change is only changed from 5.5V to 3V, which is reduced by less than half, and the switching loss still severely reduces the charge pump efficiency without reducing the frequency.
Therefore, in order to solve the problem of switching loss during light load, the charge pump circuit of the application has two different working modes: a light load mode and a heavy load mode, and different modulation modes are provided in different working modes:
1. when the charge pump circuit works in the heavy-load mode, the VCO controls the working frequency of the charge pump driving circuit to be a constant value, and the negative feedback loop is sampled according to the high-voltage output voltage V CP Regulating voltage difference V at input end of charge pump driving circuit IN -V HGND For high voltage output voltage V CP And performing negative feedback linear modulation.
Please refer to the modulation diagrams of the two operation modes shown in fig. 4, when the load current I is OUT Reaching a predetermined threshold I load When the identification charge pump circuit works in the heavy load mode, the voltage-controlled oscillator controls the working frequency f of the charge pump driving circuit SW Is of constant value and is of highest operating frequency f FIX . That is, under heavy load, the charge pump works in a constant frequency mode, so that the noise is in a relatively fixed position on the frequency spectrum, the processing is facilitated, the electromagnetic compatibility (EMC) is relatively good, and the high-voltage output voltage V is stabilized by combining a linear modulation mode CP 。
2. When the charge pump circuit works in the light load mode, the VCO outputs a voltage V according to the high voltage CP Adjusting the operating frequency f of a charge pump drive circuit SW For high voltage output voltage V CP Frequency modulation is performed.
Please refer to fig. 4, when the load current I OUT When the operation of the charge pump circuit in the light load mode is marked and the operation frequency and the load current I of the charge pump driving circuit are controlled by the voltage-controlled oscillator when the operation frequency is smaller than the preset threshold value OUT Proportional to and lower than the highest operating frequency f FIX . I.e. under light load, gradually reducing the working frequency f SW By adjusting the working frequency f SW To stabilize the high voltage output voltage V CP While minimizing the loss of the charge pump itself.
In order to realize the dual-loop modulation of the two modes, please combine the circuit diagram shown in fig. 3, in one embodimentIn one embodiment, the sampling negative feedback loop comprises a first transimpedance amplifier CMAMP1, a current sampling circuit, and a resistor R REG N-type switch tube M N1 And P-type switching tube M P4 . The non-inverting input terminal of the first transimpedance amplifier CMAMP1 acquires a reference current I REF The inverting input terminal of the first transimpedance amplifier CMAMP1 is connected to the output terminal of the charge pump circuit through a current sampling circuit. Wherein, P-type switch tube M in current sampling circuit P1 Is connected with the inverting input terminal of the first transimpedance amplifier CMAMP1, M P1 Source pass resistance R of (2) SNS An output end M connected with the charge pump circuit P1 The grid electrode of the charge pump driving circuit is connected with the input power supply end of the charge pump driving circuit. The inverting input terminal of the first transimpedance amplifier CMAMP1 acquires the output voltage V for high voltage CP Sampling current I generated after current sampling SNS . The output end of the first transimpedance amplifier is connected with an N-type switching tube M N1 Gate of M N1 Is grounded at the source of M N1 Is passed through the drain of resistor R REG An input power terminal connected to the charge pump driving circuit, M N1 The drain electrode of (C) is connected with a P-type switch tube M P4 Gate of M P4 The source of the (C) is connected with the input ground end HGND, M of the charge pump driving circuit P4 The drain of (2) is grounded.
Sampling current at inverting input terminal of first transimpedance amplifier CMAMP1V GS1 Is a switching tube M P1 From which a voltage difference V between two input terminals of the first transimpedance amplifier CMAMP1 can be obtained IN -V HGND ＝(I REF -I SNS )×A I ×R REG ，A I Is the amplification factor of the first transimpedance amplifier CMAMP 1. When the high voltage outputs the voltage V CP When too high, the sampling negative feedback loop causes the voltage difference V to be IN -V HGND Reduced, thereby reducing the high voltage output voltage V CP . Incorporating zener diode D 1 The first transimpedance amplifier CMAMP1 ensures that the voltage difference between the two inputs is V IN -V HGND ＝MAX{(I REF -I SNS )×A I ×R REG ,V ZENOR }. Thus, the output voltage of the final charge pump circuit is V CP ＝I REF ×R SNS +V IN +V GS Maximum output current capability of I OUTMAX ＝(V CP_ideal -V CP )×C FLY ×f CP ＝X×V ZENOR -I REF ×R SNS -V GS ×C FLY ×f CP 。
On the basis, the charge pump circuit also comprises a second transimpedance amplifier and a clamping circuit, wherein the second transimpedance amplifier CMAMP2 and the first transimpedance amplifier share a current sampling circuit, and the inverting input end of the second transimpedance amplifier CMAMP2 is connected with the current sampling circuit to acquire a voltage V output to high voltage CP Sampling current I generated after current sampling SNS . The non-inverting input terminal of the second transimpedance amplifier CMAMP2 acquires a resistor R REG And (5) a current value. The output end of the second transimpedance amplifier CMAMP2 is connected with the voltage input end of the voltage-controlled oscillator, and the clamping circuit is also connected with the voltage input end of the voltage-controlled oscillator VCO to provide clamping voltage. In one example, the charge pump circuit further includes a P-type switching transistor M that forms a current mirror P2 And P-type switching tube M P3 Resistance R REG By M P3 Is connected with an input power end of a charge pump driving circuit, M P2 Source and M of (2) P3 The sources of the charge pump driving circuits are connected with the input power supply end of the charge pump driving circuit. M is M P2 And M P3 Is connected with the grid of M P3 Drain electrode of M P3 Drain connection resistance R of (2) REG 。M P2 The drain of which is connected to the non-inverting input of the second transimpedance amplifier CMAMP 2.
Wherein R is SNS ＝α×R REG And α=x, X is the number of stages of pump set branches cascaded within the charge pump drive circuit. And R is SNS 、R REG The resistance value of (C) is generally large, so that M flows through P1 、M P3 Is smaller, can be considered as M P1 Gate-source voltage V of (2) GS1 And M P3 Gate-source voltage V of (2) GS3 Equal and V GS1 ＝V GS3 ＝V TH ，V TH Is the threshold voltage of the switching tube. Then the firstSampling current obtained by inverting input end of two-transimpedance amplifier CMAMP2Resistor R taken at non-inverting input of second transimpedance amplifier CMAMP2 REG The upper current value is->
When the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier CMAMP2 exceeds the difference threshold value, so that the output of the second transimpedance amplifier CMAMP2 exceeds the clamping voltage, the voltage-controlled oscillator VCO provides the charge pump driving circuit with a constant operating frequency f under the action of the clamping voltage SW ＝f FIX 。
When the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier CMAMP2 does not exceed the difference threshold value, so that the output of the second transimpedance amplifier does not exceed the clamping voltage, the voltage-controlled oscillator VCO provides the charge pump driving circuit with the load current I under the action of the output voltage of the second transimpedance amplifier CMAMP2 OUT Related operating frequencies. At this time, the voltage-controlled oscillation VCO provides the charge pump driving circuit with the working frequency of the second transimpedance amplifier under the action of the output voltageC FLY Is the capacitance of the flying capacitor in the charge pump driving circuit, and DeltaV is the ideal high-voltage output V CP_ideal And the actual high voltage output voltage V CP The difference is +.>
The above is only a preferred embodiment of the present application, and the present application is not limited to the above examples. It is to be understood that other modifications and variations which may be directly derived or contemplated by those skilled in the art without departing from the spirit and concepts of the present application are deemed to be included within the scope of the present application.

Claims (4)

1. The self-adaptive hybrid linear modulation and frequency modulation charge pump circuit is characterized by comprising a charge pump driving circuit, a sampling negative feedback loop and a voltage-controlled oscillator, wherein the charge pump driving circuit internally comprises a flying capacitor, and an input power end of the charge pump driving circuit is connected with a high-voltage input voltage V IN The input power end of the charge pump driving circuit is also connected with the capacitor C 1 The output end of the charge pump driving circuit is used as the output end of the charge pump circuit to output a high-voltage output voltage V CP The method comprises the steps of carrying out a first treatment on the surface of the The charge pump circuit works in a light load mode or a heavy load mode:
when the charge pump circuit works in a light load mode, the voltage-controlled oscillator outputs a voltage V according to the high voltage CP Adjusting the working frequency of the charge pump driving circuit to the high-voltage output voltage V CP Frequency modulation is carried out;
when the charge pump circuit works in a heavy-load mode, the voltage-controlled oscillator controls the working frequency of the charge pump driving circuit to be a constant value, and the sampling negative feedback loop outputs a voltage V according to the high voltage CP Regulating the voltage difference V of the input end of the charge pump driving circuit IN -V HGND For the high voltage output voltage V CP Performing negative feedback linear modulation;
the sampling negative feedback loop comprises a first transimpedance amplifier, a current sampling circuit and a resistor R REG N-type switch tube M N1 And P-type switching tube M P4 The non-inverting input end of the first transimpedance amplifier acquires a reference current I REF The inverting input end of the first transimpedance amplifier is connected with the output end of the charge pump circuit through the current sampling circuit, and a P-type switch tube M in the current sampling circuit P1 Is connected with the inverting input end of the first transimpedance amplifier, M P1 Source pass resistance R of (2) SNS An output end M connected with the charge pump circuit P1 The grid electrode of the first transimpedance amplifier is connected with the input power supply end of the charge pump driving circuitIs used for obtaining the high voltage output voltage V CP Sampling current I generated after current sampling SNS The method comprises the steps of carrying out a first treatment on the surface of the The output end of the first transimpedance amplifier is connected with an N-type switching tube M N1 Gate of M N1 Is grounded at the source of M N1 Is passed through the drain of resistor R REG An input power terminal M connected to the charge pump driving circuit N1 The drain electrode of (C) is connected with a P-type switch tube M P4 Gate of M P4 The source electrode of the transistor is connected with the input ground end HGND, M of the charge pump driving circuit P4 The drain electrode of the transistor is grounded;
the charge pump circuit further comprises a second transimpedance amplifier and a clamping circuit, wherein the inverting input end of the second transimpedance amplifier is connected with the current sampling circuit to acquire the high-voltage output voltage V CP Sampling current I generated after current sampling SNS The non-inverting input end of the second transimpedance amplifier acquires a resistor R REG A current value is applied; the output end of the second transimpedance amplifier is connected with the voltage input end of the voltage-controlled oscillator, and the clamping circuit is also connected with the voltage input end of the voltage-controlled oscillator to provide clamping voltage; when the current difference value between the non-inverting input end and the inverting input end of the second transimpedance amplifier exceeds a difference value threshold value, and the output of the second transimpedance amplifier exceeds the clamping voltage, the voltage-controlled oscillator provides a working frequency with a constant value for the charge pump driving circuit under the action of the clamping voltage; when the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier does not exceed the difference threshold value, so that the output of the second transimpedance amplifier does not exceed the clamping voltage, the voltage-controlled oscillator provides the charge pump driving circuit with the load current I under the action of the output voltage of the second transimpedance amplifier OUT Related operating frequencies.
2. The charge pump circuit of claim 1, wherein the charge pump circuit comprises a charge pump circuit,
when the load current I OUT When reaching a predetermined threshold, identifying that the charge pump circuit is operating in a heavy-duty mode, the voltage-controlled oscillator controls the charge pumpThe operating frequency of the driving circuit is a constant value and is the highest operating frequency f FIX ；
When the load current I OUT When the preset threshold value is smaller than the preset threshold value and the charge pump circuit is identified to work in a light load mode, the voltage-controlled oscillator controls the working frequency and the load current I of the charge pump driving circuit OUT Proportional to and lower than the highest operating frequency f FIX 。
3. The charge pump circuit of claim 1, further comprising a P-type switching transistor M that forms a current mirror P2 And P-type switching tube M P3 Resistance R REG By M P3 An input power end M connected with the charge pump driving circuit P2 Source and M of (2) P3 The sources of the charge pump driving circuits are connected with the input power supply end of the charge pump driving circuit, M P2 And M P3 Is connected with the grid of M P3 Drain electrode of M P3 Drain connection resistance R of (2) REG ，M P2 Is connected with the non-inverting input terminal of the second transimpedance amplifier, wherein R SNS ＝α×R REG And α=x, X is the number of stages of pump set branches cascaded within the charge pump drive circuit.
4. The charge pump circuit of claim 3, wherein the charge pump circuit comprises a charge pump circuit,
the sampling current obtained by the inverting input end of the second transimpedance amplifier isThe resistor R acquired by the non-inverting input end of the second transimpedance amplifier REG The upper current value is->When the current difference between the non-inverting input terminal and the inverting input terminal of the second transimpedance amplifier does not exceed the difference threshold value, so that the output of the second transimpedance amplifier does not exceed the clamping voltage, the voltage-controlled oscillator is arranged at the first stageThe working frequency provided for the charge pump driving circuit under the action of the output voltage of the two transimpedance amplifiers is +.>C FLY Is the capacitance of the flying capacitor in the charge pump driving circuit, and DeltaV is the ideal high-voltage output V CP_ideal And the actual high voltage output voltage V CP The difference is +.>V TH Is the threshold voltage of the switching tube.
CN202210087178.9A 2022-01-25 2022-01-25 Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit Active CN114400888B (en)

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Application Number Priority Date Filing Date Title
CN202210087178.9A CN114400888B (en) 2022-01-25 2022-01-25 Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210087178.9A CN114400888B (en) 2022-01-25 2022-01-25 Self-adaptive hybrid linear modulation and frequency modulation charge pump circuit

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CN114400888A CN114400888A (en) 2022-04-26
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JP2001119927A (en) * 1999-10-20 2001-04-27 Toshiba Corp Charge pump voltage boosting circuit and stabilizing voltage generating circuit
US6356062B1 (en) * 2000-09-27 2002-03-12 Intel Corporation Degenerative load temperature correction for charge pumps
US6756838B1 (en) * 2003-03-18 2004-06-29 T-Ram, Inc. Charge pump based voltage regulator with smart power regulation
CN102684478A (en) * 2012-05-04 2012-09-19 上海艾为电子技术有限公司 Charge pump circuit
CN103490624A (en) * 2013-09-25 2014-01-01 北京中科微电子技术有限公司 Self-adaption frequency charge pump circuit
US10348193B1 (en) * 2018-06-19 2019-07-09 Texas Instruments Incorporated Power supply system with non-linear capacitance charge-pump
CN113640776A (en) * 2021-08-18 2021-11-12 无锡英迪芯微电子科技股份有限公司 High-precision frequency locking circuit based on negative feedback
CN113659830A (en) * 2021-08-18 2021-11-16 无锡英迪芯微电子科技股份有限公司 Charge pump circuit with dynamically adjusted output voltage

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001119927A (en) * 1999-10-20 2001-04-27 Toshiba Corp Charge pump voltage boosting circuit and stabilizing voltage generating circuit
US6356062B1 (en) * 2000-09-27 2002-03-12 Intel Corporation Degenerative load temperature correction for charge pumps
US6756838B1 (en) * 2003-03-18 2004-06-29 T-Ram, Inc. Charge pump based voltage regulator with smart power regulation
CN102684478A (en) * 2012-05-04 2012-09-19 上海艾为电子技术有限公司 Charge pump circuit
CN103490624A (en) * 2013-09-25 2014-01-01 北京中科微电子技术有限公司 Self-adaption frequency charge pump circuit
US10348193B1 (en) * 2018-06-19 2019-07-09 Texas Instruments Incorporated Power supply system with non-linear capacitance charge-pump
CN113640776A (en) * 2021-08-18 2021-11-12 无锡英迪芯微电子科技股份有限公司 High-precision frequency locking circuit based on negative feedback
CN113659830A (en) * 2021-08-18 2021-11-16 无锡英迪芯微电子科技股份有限公司 Charge pump circuit with dynamically adjusted output voltage

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