AU2001281078A1 - A mem gyroscope and a method of making same - Google Patents

A mem gyroscope and a method of making same

Info

Publication number
AU2001281078A1
AU2001281078A1 AU2001281078A AU8107801A AU2001281078A1 AU 2001281078 A1 AU2001281078 A1 AU 2001281078A1 AU 2001281078 A AU2001281078 A AU 2001281078A AU 8107801 A AU8107801 A AU 8107801A AU 2001281078 A1 AU2001281078 A1 AU 2001281078A1
Authority
AU
Australia
Prior art keywords
making same
mem
gyroscope
mem gyroscope
making
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001281078A
Inventor
David T. Chang
Randall L. Kubena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HRL Laboratories LLC
Original Assignee
HRL Laboratories LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HRL Laboratories LLC filed Critical HRL Laboratories LLC
Publication of AU2001281078A1 publication Critical patent/AU2001281078A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/0015—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
    • G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0242—Gyroscopes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0191—Transfer of a layer from a carrier wafer to a device wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
AU2001281078A 2000-08-01 2001-07-31 A mem gyroscope and a method of making same Abandoned AU2001281078A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/629,679 US6555404B1 (en) 2000-08-01 2000-08-01 Method of manufacturing a dual wafer tunneling gyroscope
US09629679 2000-08-01
PCT/US2001/024529 WO2002010064A2 (en) 2000-08-01 2001-07-31 A mem gyroscope and a method of making same

Publications (1)

Publication Number Publication Date
AU2001281078A1 true AU2001281078A1 (en) 2002-02-13

Family

ID=24524031

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001281078A Abandoned AU2001281078A1 (en) 2000-08-01 2001-07-31 A mem gyroscope and a method of making same

Country Status (6)

Country Link
US (3) US6555404B1 (en)
EP (1) EP1305256A2 (en)
JP (1) JP2004505260A (en)
AU (1) AU2001281078A1 (en)
TW (1) TW498410B (en)
WO (1) WO2002010064A2 (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6563184B1 (en) * 2000-08-01 2003-05-13 Hrl Laboratories, Llc Single crystal tunneling sensor or switch with silicon beam structure and a method of making same
US6580138B1 (en) 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US6674141B1 (en) * 2000-08-01 2004-01-06 Hrl Laboratories, Llc Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
US7381630B2 (en) * 2001-01-02 2008-06-03 The Charles Stark Draper Laboratory, Inc. Method for integrating MEMS device and interposer
EP1717195B1 (en) * 2001-11-09 2011-09-14 WiSpry, Inc. Trilayered beam MEMS switch and related method
JP4115859B2 (en) * 2003-02-28 2008-07-09 株式会社日立製作所 Anodic bonding method and electronic device
AU2003901914A0 (en) * 2003-04-22 2003-05-08 Quantum Precision Instruments Pty Ltd Quantum tunnelling transducer device
DE10349014B4 (en) * 2003-10-17 2014-01-09 Austriamicrosystems Ag Microelectromechanical rotation rate sensor
US7202100B1 (en) 2004-09-03 2007-04-10 Hrl Laboratories, Llc Method of manufacturing a cloverleaf microgyroscope and cloverleaf microgyroscope
US20060099733A1 (en) * 2004-11-09 2006-05-11 Geefay Frank S Semiconductor package and fabrication method
US7015060B1 (en) 2004-12-08 2006-03-21 Hrl Laboratories, Llc Cloverleaf microgyroscope with through-wafer interconnects and method of manufacturing a cloverleaf microgyroscope with through-wafer interconnects
US7232700B1 (en) 2004-12-08 2007-06-19 Hrl Laboratories, Llc Integrated all-Si capacitive microgyro with vertical differential sense and control and process for preparing an integrated all-Si capacitive microgyro with vertical differential sense
EP2002511A4 (en) * 2006-03-08 2012-02-29 Wispry Inc Tunable impedance matching networks and tunable diplexer matching systems
US7767483B1 (en) * 2006-07-25 2010-08-03 The United States Of America As Represented By The Secretary Of The Navy Dual-suspension system for MEMS-based devices and method for fabricating same
EP1962054B1 (en) * 2007-02-13 2011-07-20 STMicroelectronics Srl Microelectromechanical gyroscope with open loop reading device and control method of a microelectromechanical gyroscope
EP1959233A1 (en) * 2007-02-13 2008-08-20 STMicroelectronics S.r.l. Microelectromechanical gyroscope with self-test function and control method of a microelectromechanical gyroscope
DE102010041763A1 (en) * 2010-09-30 2012-04-05 Siemens Aktiengesellschaft Micromechanical substrate
US9705450B2 (en) * 2011-06-24 2017-07-11 The United States Of America As Represented By The Secretary Of The Navy Apparatus and methods for time domain measurement of oscillation perturbations
US8650955B2 (en) 2012-01-18 2014-02-18 The United States Of America As Represented By The Secretary Of The Navy Time domain switched gyroscope
US8957355B1 (en) * 2012-01-26 2015-02-17 The Boeing Company Inertial measurement unit apparatus for use with guidance systems
US8875576B2 (en) 2012-03-21 2014-11-04 The United States Of America As Represented By The Secretary Of The Navy Apparatus and method for providing an in-plane inertial device with integrated clock
US8946067B2 (en) * 2012-06-12 2015-02-03 Bing Hu Method of making a thin crystalline semiconductor material
US9254992B2 (en) * 2012-07-27 2016-02-09 Tao Ju Method of making a MEMS gyroscope having a magnetic source and a magnetic sensing mechanism
US8991250B2 (en) 2012-09-11 2015-03-31 The United States Of America As Represented By Secretary Of The Navy Tuning fork gyroscope time domain inertial sensor
US10145739B2 (en) 2014-04-03 2018-12-04 Oto Photonics Inc. Waveguide sheet, fabrication method thereof and spectrometer using the same

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265470A (en) 1987-11-09 1993-11-30 California Institute Of Technology Tunnel effect measuring systems and particle detectors
US5210714A (en) 1988-10-14 1993-05-11 International Business Machines Corporation Distance-controlled tunneling transducer and direct access storage unit employing the transducer
US5015850A (en) * 1989-06-20 1991-05-14 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated microscope assembly
DE69102590T2 (en) 1990-05-18 1994-10-06 British Aerospace Inertial sensors.
JP3069923B2 (en) 1991-06-17 2000-07-24 キヤノン株式会社 Cantilever probe, atomic force microscope, information recording / reproducing device
US5313835A (en) 1991-12-19 1994-05-24 Motorola, Inc. Integrated monolithic gyroscopes/accelerometers with logic circuits
DE4305033A1 (en) 1992-02-21 1993-10-28 Siemens Ag Micro-mechanical relay with hybrid drive - has electrostatic drive combined with piezoelectric drive for high force operation and optimum response
JP3152005B2 (en) * 1993-03-17 2001-04-03 株式会社村田製作所 Manufacturing method of semiconductor acceleration sensor
EP0619495B1 (en) 1993-04-05 1997-05-21 Siemens Aktiengesellschaft Process for manufacturing tunnel effect sensors
US5354985A (en) 1993-06-03 1994-10-11 Stanford University Near field scanning optical and force microscope including cantilever and optical waveguide
US5475318A (en) 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US5729074A (en) * 1994-03-24 1998-03-17 Sumitomo Electric Industries, Ltd. Micro mechanical component and production process thereof
US5666190A (en) 1994-04-12 1997-09-09 The Board Of Trustees Of The Leland Stanford, Jr. University Method of performing lithography using cantilever array
US6075585A (en) 1994-04-12 2000-06-13 The Board Of Trustees Of The Leland Stanford, Jr. University Vibrating probe for a scanning probe microscope
US5596194A (en) 1994-08-19 1997-01-21 Hughes Aircraft Company Single-wafer tunneling sensor and low-cost IC manufacturing method
US5646348A (en) 1994-08-29 1997-07-08 The Charles Stark Draper Laboratory, Inc. Micromechanical sensor with a guard band electrode and fabrication technique therefor
JP3182301B2 (en) 1994-11-07 2001-07-03 キヤノン株式会社 Microstructure and method for forming the same
US5883387A (en) 1994-11-15 1999-03-16 Olympus Optical Co., Ltd. SPM cantilever and a method for manufacturing the same
JP2897671B2 (en) 1995-01-25 1999-05-31 日本電気株式会社 Field emission cold cathode
US5659195A (en) 1995-06-08 1997-08-19 The Regents Of The University Of California CMOS integrated microsensor with a precision measurement circuit
GB9524241D0 (en) * 1995-11-28 1996-01-31 Smiths Industries Plc Rate sensors
US5894090A (en) 1996-05-31 1999-04-13 California Institute Of Technology Silicon bulk micromachined, symmetric, degenerate vibratorygyroscope, accelerometer and sensor and method for using the same
US5992233A (en) 1996-05-31 1999-11-30 The Regents Of The University Of California Micromachined Z-axis vibratory rate gyroscope
US5747804A (en) 1996-09-13 1998-05-05 Raytheon Company Method and apparatus for sensing infrared radiation utilizing a micro-electro-mechanical sensor
JP3639684B2 (en) * 1997-01-13 2005-04-20 キヤノン株式会社 Evanescent wave detection microprobe and method for manufacturing the same, probe including the microprobe and method for manufacturing the same, evanescent wave detection device including the microprobe, near-field scanning optical microscope, and information reproducing device
JP3493974B2 (en) * 1997-10-01 2004-02-03 オムロン株式会社 Electrostatic micro relay
US5929497A (en) 1998-06-11 1999-07-27 Delco Electronics Corporation Batch processed multi-lead vacuum packaging for integrated sensors and circuits
US6126311A (en) * 1998-11-02 2000-10-03 Claud S. Gordon Company Dew point sensor using mems
US6091125A (en) 1998-12-02 2000-07-18 Northeastern University Micromechanical electronic device
US6229190B1 (en) 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
US6174820B1 (en) 1999-02-16 2001-01-16 Sandia Corporation Use of silicon oxynitride as a sacrificial material for microelectromechanical devices
US6337027B1 (en) 1999-09-30 2002-01-08 Rockwell Science Center, Llc Microelectromechanical device manufacturing process
US6580138B1 (en) 2000-08-01 2003-06-17 Hrl Laboratories, Llc Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same
US6563184B1 (en) 2000-08-01 2003-05-13 Hrl Laboratories, Llc Single crystal tunneling sensor or switch with silicon beam structure and a method of making same

Also Published As

Publication number Publication date
US20040217388A1 (en) 2004-11-04
JP2004505260A (en) 2004-02-19
TW498410B (en) 2002-08-11
US6841838B2 (en) 2005-01-11
US20030013246A1 (en) 2003-01-16
US6555404B1 (en) 2003-04-29
US6975009B2 (en) 2005-12-13
WO2002010064A3 (en) 2002-04-25
WO2002010064A2 (en) 2002-02-07
EP1305256A2 (en) 2003-05-02

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