AU2001267079A1 - Integrated electronic-optoelectronic devices and method of making the same - Google Patents

Integrated electronic-optoelectronic devices and method of making the same

Info

Publication number
AU2001267079A1
AU2001267079A1 AU2001267079A AU6707901A AU2001267079A1 AU 2001267079 A1 AU2001267079 A1 AU 2001267079A1 AU 2001267079 A AU2001267079 A AU 2001267079A AU 6707901 A AU6707901 A AU 6707901A AU 2001267079 A1 AU2001267079 A1 AU 2001267079A1
Authority
AU
Australia
Prior art keywords
making
same
optoelectronic devices
integrated electronic
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001267079A
Inventor
Andreas G. Andreou
Alyssa Apsel
Ravindra A. Athale
Zaven Kalayjian
Philippe O. Pouliquen
Ronald E. Reedy
George J. Simonis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
PSemi Corp
George Mason University
Johns Hopkins University
US Department of Army
Original Assignee
George Mason University
Johns Hopkins University
US Department of Army
Peregrine Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by George Mason University, Johns Hopkins University, US Department of Army, Peregrine Semiconductor Corp filed Critical George Mason University
Publication of AU2001267079A1 publication Critical patent/AU2001267079A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Optical Integrated Circuits (AREA)
AU2001267079A 2000-06-16 2001-06-13 Integrated electronic-optoelectronic devices and method of making the same Abandoned AU2001267079A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US21190800P 2000-06-16 2000-06-16
US60/211,908 2000-06-16
US09/658,259 US6583445B1 (en) 2000-06-16 2000-09-08 Integrated electronic-optoelectronic devices and method of making the same
US09/658,259 2000-09-08
PCT/US2001/040947 WO2001097294A2 (en) 2000-06-16 2001-06-13 Integrated electronic-optoelectronic devices and method of making the same

Publications (1)

Publication Number Publication Date
AU2001267079A1 true AU2001267079A1 (en) 2001-12-24

Family

ID=26906581

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001267079A Abandoned AU2001267079A1 (en) 2000-06-16 2001-06-13 Integrated electronic-optoelectronic devices and method of making the same

Country Status (3)

Country Link
US (1) US6583445B1 (en)
AU (1) AU2001267079A1 (en)
WO (1) WO2001097294A2 (en)

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JP2003218034A (en) * 2002-01-17 2003-07-31 Sony Corp Method for selective growth, semiconductor light- emitting element, and its manufacturing method
JP2003218395A (en) * 2002-01-18 2003-07-31 Sony Corp Semiconductor light emitting element, semiconductor laser element, and light emission device using the same
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US6872983B2 (en) * 2002-11-11 2005-03-29 Finisar Corporation High speed optical transceiver package using heterogeneous integration
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JP3974537B2 (en) * 2003-02-18 2007-09-12 沖電気工業株式会社 Semiconductor device and manufacturing method of semiconductor device
JP2004260074A (en) * 2003-02-27 2004-09-16 Seiko Epson Corp Semiconductor device, method for manufacturing and mounting the same, circuit board, and electronic apparatus
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US20050013557A1 (en) * 2003-07-14 2005-01-20 Daoqiang Lu Optical packages and methods for controlling a standoff height in optical packages
US7164702B1 (en) 2003-08-29 2007-01-16 The United States Of America As Represented By The Secretary Of The Army Optical transmitters and interconnects using surface-emitting lasers and micro-optical elements
DE10342263A1 (en) * 2003-09-11 2005-04-28 Infineon Technologies Ag Optoelectronic component and optoelectronic arrangement with an optoelectronic component
DE10348675B3 (en) * 2003-10-15 2005-06-09 Infineon Technologies Ag Module for bidirectional optical signal transmission
US7227246B2 (en) * 2003-10-30 2007-06-05 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Matching circuits on optoelectronic devices
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US7809278B2 (en) * 2004-07-26 2010-10-05 Hewlett-Packard Development Company, L.P. Apparatus and method of providing separate control and data channels between arrays of light emitters and detectors for optical communication and alignment
US7623783B2 (en) * 2004-08-10 2009-11-24 Hewlett-Packard Development Company, L.P. System and method of self-configuring optical communication channels between arrays of emitters and detectors
US7623793B2 (en) * 2004-08-10 2009-11-24 Hewlett-Packard Development Company, L.P. System and method of configuring fiber optic communication channels between arrays of emitters and detectors
US7269321B2 (en) * 2004-08-10 2007-09-11 Hewlett-Packard Development Company, L.P. System and method of configuring fiber optic communication channels between arrays of emitters and detectors
US7251388B2 (en) * 2004-08-10 2007-07-31 Hewlett-Packard Development Company, L.P. Apparatus for providing optical communication between integrated circuits of different PC boards and an integrated circuit assembly for use therein
US7653108B2 (en) * 2004-09-09 2010-01-26 Hewlett-Packard Development Company, L.P. Apparatus and method of establishing optical communication channels between a steerable array of laser emitters and an array of optical detectors
US7229218B2 (en) * 2004-09-20 2007-06-12 Hewlett-Packard Development Company, L.P. Apparatus and method of providing an optical connection between PC boards for optical communication
US7295590B2 (en) * 2004-11-15 2007-11-13 Intel Corporation Method for measuring VCSEL reverse bias leakage in an optical module
US20060214909A1 (en) * 2005-03-23 2006-09-28 Poh Ju C Vertical cavity surface-emitting laser in non-hermetic transistor outline package
US20070041416A1 (en) * 2005-08-19 2007-02-22 Koelle Bernhard U Tunable long-wavelength VCSEL system
JP2007294786A (en) * 2006-04-27 2007-11-08 Elpida Memory Inc Semiconductor device, and method of manufacturing the same
US8062919B2 (en) 2006-08-11 2011-11-22 Cornell Research Foundation, Inc. Monolithic silicon-based photonic receiver
US20080061433A1 (en) * 2006-09-11 2008-03-13 Arquisal Rodel B Methods and substrates to connect an electrical member to a substrate to form a bonded structure
US7639912B2 (en) * 2007-01-31 2009-12-29 Hewlett-Packard Development Company, L.P. Apparatus and method for subterranean distribution of optical signals
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WO2010121309A1 (en) * 2009-04-21 2010-10-28 Petar Branko Atanackovic Optoelectronic device with lateral pin or pin junction
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US8222084B2 (en) * 2010-12-08 2012-07-17 Skorpios Technologies, Inc. Method and system for template assisted wafer bonding
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9538909B2 (en) * 2013-07-08 2017-01-10 Omnivision Technologies, Inc. Self-illuminating CMOS imaging package
US9627445B2 (en) * 2013-12-05 2017-04-18 Infineon Technologies Dresden Gmbh Optoelectronic component and a method for manufacturing an optoelectronic component
US9972970B2 (en) * 2014-02-28 2018-05-15 Japan Science And Technology Agency Thermal emission source and two-dimensional photonic crystal for use in the same emission source
EP2985636B1 (en) * 2014-08-11 2018-07-25 Leuze electronic GmbH + Co KG Method for aligning a sensor device
DE102015110496B4 (en) 2015-06-30 2018-06-14 Infineon Technologies Dresden Gmbh INTEGRATED, LIGHT-EMITTING COMPONENT, INTEGRATED SENSOR COMPONENT AND MANUFACTURING METHOD
US9716367B2 (en) * 2015-12-18 2017-07-25 International Business Machines Corporation Semiconductor optoelectronics and CMOS on sapphire substrate
US9960328B2 (en) 2016-09-06 2018-05-01 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
JP6933794B2 (en) * 2016-12-01 2021-09-08 富士通株式会社 Optical module and manufacturing method of optical module
US10473853B2 (en) * 2016-12-22 2019-11-12 Sifotonics Technologies Co., Ltd. Fully integrated avalanche photodiode receiver
CN112531463B (en) 2017-01-16 2024-03-26 苹果公司 Combining light-emitting elements of different divergences on the same substrate
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KR102518449B1 (en) 2019-02-21 2023-04-05 애플 인크. Indium Phosphide VCSEL with Dielectric DBR
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Also Published As

Publication number Publication date
WO2001097294A2 (en) 2001-12-20
WO2001097294A3 (en) 2002-08-29
US6583445B1 (en) 2003-06-24

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