ZA921208B - Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom - Google Patents
Apparatus for producing diamonds by chemical vapor deposition and articles produced therefromInfo
- Publication number
- ZA921208B ZA921208B ZA921208A ZA921208A ZA921208B ZA 921208 B ZA921208 B ZA 921208B ZA 921208 A ZA921208 A ZA 921208A ZA 921208 A ZA921208 A ZA 921208A ZA 921208 B ZA921208 B ZA 921208B
- Authority
- ZA
- South Africa
- Prior art keywords
- vapor deposition
- chemical vapor
- produced therefrom
- articles produced
- producing diamonds
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/276—Diamond only using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US66415391A | 1991-03-04 | 1991-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA921208B true ZA921208B (en) | 1993-02-24 |
Family
ID=24664778
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA921208A ZA921208B (en) | 1991-03-04 | 1992-02-19 | Apparatus for producing diamonds by chemical vapor deposition and articles produced therefrom |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP0502657B1 (xx) |
JP (1) | JPH0578851A (xx) |
KR (1) | KR920018251A (xx) |
CA (1) | CA2062005A1 (xx) |
DE (1) | DE69206019T2 (xx) |
IE (1) | IE920674A1 (xx) |
ZA (1) | ZA921208B (xx) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
US5397396A (en) * | 1993-12-27 | 1995-03-14 | General Electric Company | Apparatus for chemical vapor deposition of diamond including thermal spreader |
US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
DE19737548A1 (de) * | 1997-08-28 | 1999-03-04 | Inst Oberflaechenmodifizierung | Kipp-, rotier- und thermostatierbare Substratstation zum Ionenstrahlätzen |
US6499426B1 (en) * | 1999-12-10 | 2002-12-31 | Saint-Gobain Industrial Ceramics, Inc. | System and method for coating non-planar surfaces of objects with diamond film |
IT1394113B1 (it) * | 2009-05-13 | 2012-05-25 | Enea Ente Nuove Tec | Dispositivo cvd e relativo metodo per la deposizione di diamante nanocristallino |
JP6230900B2 (ja) * | 2013-12-19 | 2017-11-15 | 東京エレクトロン株式会社 | 基板処理装置 |
CN110551987A (zh) * | 2018-06-04 | 2019-12-10 | 至玥腾风科技投资集团有限公司 | 环形单晶无机非金属部件的制作方法、设备及飞轮 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0288497A (ja) * | 1988-06-09 | 1990-03-28 | Toshiba Corp | 単結晶ダイヤモンド粒子の製造方法 |
DE3927136A1 (de) * | 1989-08-17 | 1991-02-21 | Philips Patentverwaltung | Verfahren zur herstellung polykristalliner diamantschichten |
-
1992
- 1992-02-19 ZA ZA921208A patent/ZA921208B/xx unknown
- 1992-02-27 CA CA002062005A patent/CA2062005A1/en not_active Abandoned
- 1992-02-28 JP JP4041826A patent/JPH0578851A/ja not_active Withdrawn
- 1992-02-28 DE DE69206019T patent/DE69206019T2/de not_active Expired - Fee Related
- 1992-02-28 EP EP92301693A patent/EP0502657B1/en not_active Expired - Lifetime
- 1992-03-03 KR KR1019920003484A patent/KR920018251A/ko not_active Application Discontinuation
- 1992-03-03 IE IE067492A patent/IE920674A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0502657B1 (en) | 1995-11-15 |
DE69206019T2 (de) | 1996-07-04 |
CA2062005A1 (en) | 1992-09-05 |
DE69206019D1 (de) | 1995-12-21 |
EP0502657A1 (en) | 1992-09-09 |
IE920674A1 (en) | 1992-09-09 |
JPH0578851A (ja) | 1993-03-30 |
KR920018251A (ko) | 1992-10-21 |
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