ZA862256B - Vertical apparatus for continuous deposition of semiconductor alloys - Google Patents
Vertical apparatus for continuous deposition of semiconductor alloysInfo
- Publication number
- ZA862256B ZA862256B ZA862256A ZA862256A ZA862256B ZA 862256 B ZA862256 B ZA 862256B ZA 862256 A ZA862256 A ZA 862256A ZA 862256 A ZA862256 A ZA 862256A ZA 862256 B ZA862256 B ZA 862256B
- Authority
- ZA
- South Africa
- Prior art keywords
- continuous deposition
- semiconductor alloys
- vertical apparatus
- vertical
- alloys
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/718,571 US4601260A (en) | 1985-04-01 | 1985-04-01 | Vertical semiconductor processor |
Publications (1)
Publication Number | Publication Date |
---|---|
ZA862256B true ZA862256B (en) | 1986-11-26 |
Family
ID=24886579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ZA862256A ZA862256B (en) | 1985-04-01 | 1986-03-26 | Vertical apparatus for continuous deposition of semiconductor alloys |
Country Status (9)
Country | Link |
---|---|
US (1) | US4601260A (xx) |
EP (1) | EP0200332A2 (xx) |
JP (1) | JPH0738378B2 (xx) |
AU (1) | AU5553386A (xx) |
BR (1) | BR8601420A (xx) |
CA (1) | CA1242816A (xx) |
ES (1) | ES8708093A1 (xx) |
IN (1) | IN167003B (xx) |
ZA (1) | ZA862256B (xx) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3641437A1 (de) * | 1985-12-04 | 1987-06-11 | Canon Kk | Feinteilchen-blasvorrichtung |
US4723507A (en) * | 1986-01-16 | 1988-02-09 | Energy Conversion Devices, Inc. | Isolation passageway including annular region |
US4829189A (en) * | 1986-07-18 | 1989-05-09 | Sando Iron Works Co., Ltd. | Apparatus for low-temperature plasma treatment of sheet material |
KR910003742B1 (ko) | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
JPH02148715A (ja) * | 1988-11-29 | 1990-06-07 | Canon Inc | 半導体デバイスの連続形成装置 |
US5105762A (en) * | 1988-12-20 | 1992-04-21 | Texas Instruments Incorporated | Support and seal structure for CCVD reactor |
JP3101330B2 (ja) * | 1991-01-23 | 2000-10-23 | キヤノン株式会社 | マイクロ波プラズマcvd法による大面積の機能性堆積膜を連続的に形成する方法及び装置 |
DE4324320B4 (de) * | 1992-07-24 | 2006-08-31 | Fuji Electric Co., Ltd., Kawasaki | Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung |
US6720576B1 (en) * | 1992-09-11 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Plasma processing method and photoelectric conversion device |
US5821597A (en) * | 1992-09-11 | 1998-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
CA2146369C (en) * | 1992-11-13 | 1999-06-15 | Masatsugu Izu | Microwave apparatus for depositing thin films |
FR2786208B1 (fr) * | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
US6225611B1 (en) | 1999-11-15 | 2001-05-01 | Hull Corporation | Microwave lyophilizer having corona discharge control |
EP1209252A3 (en) * | 2000-09-15 | 2002-11-27 | Shipley Co. L.L.C. | Continuous coating apparatus |
JP4003163B2 (ja) * | 2002-01-15 | 2007-11-07 | 富士フイルム株式会社 | 多層塗布膜の製造装置 |
US20060278163A1 (en) * | 2002-08-27 | 2006-12-14 | Ovshinsky Stanford R | High throughput deposition apparatus with magnetic support |
US20090068344A1 (en) * | 2007-07-31 | 2009-03-12 | Vincent Cannella | System and method for manufacturing thin film electrical devices |
EP2123793A1 (en) | 2008-05-20 | 2009-11-25 | Helianthos B.V. | Vapour deposition process |
CN102021576B (zh) * | 2010-09-30 | 2012-06-27 | 深圳市信诺泰创业投资企业(普通合伙) | 一种连续生产挠性覆铜板的方法 |
CN102820374A (zh) * | 2012-07-24 | 2012-12-12 | 海宁博大科技有限公司 | 一种太阳能电池组背膜的生产设备 |
DE102013219816B4 (de) * | 2013-09-30 | 2023-06-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtung mit Abscheidekammer mit turbulenter Gasführung zur kontinuierlichen Beschichtung von Substraten mittels Gasphasenabscheidung sowie Verfahren zu diesem Zweck unter Verwendung einer solchen Vorrichtung |
CN109195931B (zh) | 2016-06-02 | 2022-08-09 | 应用材料公司 | 用于沉积材料在连续基板上的方法及设备 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4519339A (en) * | 1981-03-16 | 1985-05-28 | Sovonics Solar Systems | Continuous amorphous solar cell production system |
US4513684A (en) * | 1982-12-22 | 1985-04-30 | Energy Conversion Devices, Inc. | Upstream cathode assembly |
-
1985
- 1985-04-01 US US06/718,571 patent/US4601260A/en not_active Expired - Lifetime
-
1986
- 1986-03-17 CA CA000504278A patent/CA1242816A/en not_active Expired
- 1986-03-19 EP EP86302039A patent/EP0200332A2/en not_active Withdrawn
- 1986-03-24 IN IN273/DEL/86A patent/IN167003B/en unknown
- 1986-03-26 ZA ZA862256A patent/ZA862256B/xx unknown
- 1986-03-28 JP JP61070661A patent/JPH0738378B2/ja not_active Expired - Lifetime
- 1986-03-31 ES ES553530A patent/ES8708093A1/es not_active Expired
- 1986-03-31 BR BR8601420A patent/BR8601420A/pt unknown
- 1986-04-01 AU AU55533/86A patent/AU5553386A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP0200332A2 (en) | 1986-11-05 |
AU5553386A (en) | 1986-10-09 |
JPS61263120A (ja) | 1986-11-21 |
ES8708093A1 (es) | 1987-09-01 |
BR8601420A (pt) | 1986-12-09 |
JPH0738378B2 (ja) | 1995-04-26 |
CA1242816A (en) | 1988-10-04 |
IN167003B (xx) | 1990-08-18 |
US4601260A (en) | 1986-07-22 |
ES553530A0 (es) | 1987-09-01 |
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