ZA718405B - Three dimensional charge coupled devices - Google Patents

Three dimensional charge coupled devices

Info

Publication number
ZA718405B
ZA718405B ZA718405A ZA718405A ZA718405B ZA 718405 B ZA718405 B ZA 718405B ZA 718405 A ZA718405 A ZA 718405A ZA 718405 A ZA718405 A ZA 718405A ZA 718405 B ZA718405 B ZA 718405B
Authority
ZA
South Africa
Prior art keywords
charge coupled
coupled devices
dimensional charge
dimensional
devices
Prior art date
Application number
ZA718405A
Other languages
English (en)
Inventor
W Boyle
G Smith
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of ZA718405B publication Critical patent/ZA718405B/xx

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/287Organisation of a multiplicity of shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107Substrate region of field-effect devices
    • H01L29/1091Substrate region of field-effect devices of charge coupled devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
ZA718405A 1970-12-16 1971-12-15 Three dimensional charge coupled devices ZA718405B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9861970A 1970-12-16 1970-12-16

Publications (1)

Publication Number Publication Date
ZA718405B true ZA718405B (en) 1972-09-27

Family

ID=22270151

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA718405A ZA718405B (en) 1970-12-16 1971-12-15 Three dimensional charge coupled devices

Country Status (15)

Country Link
US (1) US3796927A (ja)
JP (1) JPS5316674B1 (ja)
AU (1) AU464940B2 (ja)
BE (1) BE776637A (ja)
CA (1) CA946076A (ja)
CH (1) CH539916A (ja)
DE (1) DE2162140A1 (ja)
ES (1) ES398327A1 (ja)
FR (1) FR2118110B1 (ja)
GB (1) GB1358890A (ja)
IE (1) IE35887B1 (ja)
IT (1) IT945397B (ja)
NL (1) NL7117115A (ja)
SE (1) SE381356B (ja)
ZA (1) ZA718405B (ja)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
US4047216A (en) * 1974-04-03 1977-09-06 Rockwell International Corporation High speed low capacitance charge coupled device in silicon-sapphire
DE2527657C3 (de) * 1975-06-20 1979-08-23 Siemens Ag, 1000 Berlin Und 8000 Muenchen Optoelektronischer Sensor und Verfahren zu seinem Betrieb
CA1101993A (en) * 1976-04-15 1981-05-26 Kunihiro Tanikawa Charge coupled device
US4613895A (en) * 1977-03-24 1986-09-23 Eastman Kodak Company Color responsive imaging device employing wavelength dependent semiconductor optical absorption
JPH0160951B2 (ja) * 1978-01-03 1989-12-26 Advanced Micro Devices Inc
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
EP0025658A3 (en) * 1979-09-18 1983-04-20 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Improvements in or relating to charge storage and transfer devices and their fabrication
US4450464A (en) * 1980-07-23 1984-05-22 Matsushita Electric Industrial Co., Ltd. Solid state area imaging apparatus having a charge transfer arrangement
US4716447A (en) * 1985-09-20 1987-12-29 Rca Corporation Interrupting charge integration in semiconductor imagers exposed to radiant energy
US5814889A (en) * 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US5618752A (en) * 1995-06-05 1997-04-08 Harris Corporation Method of fabrication of surface mountable integrated circuits
US5682062A (en) * 1995-06-05 1997-10-28 Harris Corporation System for interconnecting stacked integrated circuits
US5646067A (en) * 1995-06-05 1997-07-08 Harris Corporation Method of bonding wafers having vias including conductive material
US5608264A (en) * 1995-06-05 1997-03-04 Harris Corporation Surface mountable integrated circuit with conductive vias
US5668409A (en) * 1995-06-05 1997-09-16 Harris Corporation Integrated circuit with edge connections and method

Also Published As

Publication number Publication date
AU464940B2 (en) 1975-09-11
FR2118110B1 (ja) 1974-08-23
IE35887B1 (en) 1976-06-23
CA946076A (en) 1974-04-23
BE776637A (fr) 1972-04-04
ES398327A1 (es) 1975-04-16
NL7117115A (ja) 1972-06-20
DE2162140A1 (de) 1972-07-06
JPS5316674B1 (ja) 1978-06-02
SE381356B (sv) 1975-12-01
IE35887L (en) 1972-06-16
US3796927A (en) 1974-03-12
GB1358890A (en) 1974-07-03
FR2118110A1 (ja) 1972-07-28
CH539916A (de) 1973-07-31
AU3673871A (en) 1973-06-14
IT945397B (it) 1973-05-10

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