ZA202302132B - Method for preparing chromium-doped unhydrous single-crystal galaxite under high-temperature and high-pressure condition - Google Patents

Method for preparing chromium-doped unhydrous single-crystal galaxite under high-temperature and high-pressure condition

Info

Publication number
ZA202302132B
ZA202302132B ZA2023/02132A ZA202302132A ZA202302132B ZA 202302132 B ZA202302132 B ZA 202302132B ZA 2023/02132 A ZA2023/02132 A ZA 2023/02132A ZA 202302132 A ZA202302132 A ZA 202302132A ZA 202302132 B ZA202302132 B ZA 202302132B
Authority
ZA
South Africa
Prior art keywords
unhydrous
galaxite
doped
crystal
temperature
Prior art date
Application number
ZA2023/02132A
Other languages
English (en)
Inventor
Dai Lidong
Hu Haiying
Original Assignee
Inst Geochemistry Cas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Inst Geochemistry Cas filed Critical Inst Geochemistry Cas
Publication of ZA202302132B publication Critical patent/ZA202302132B/en

Links

ZA2023/02132A 2022-11-09 2023-02-21 Method for preparing chromium-doped unhydrous single-crystal galaxite under high-temperature and high-pressure condition ZA202302132B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211397958.XA CN115679447A (zh) 2022-11-09 2022-11-09 一种高温高压下铬掺杂的无水锰尖晶石单晶的制备方法

Publications (1)

Publication Number Publication Date
ZA202302132B true ZA202302132B (en) 2023-05-31

Family

ID=85050064

Family Applications (1)

Application Number Title Priority Date Filing Date
ZA2023/02132A ZA202302132B (en) 2022-11-09 2023-02-21 Method for preparing chromium-doped unhydrous single-crystal galaxite under high-temperature and high-pressure condition

Country Status (2)

Country Link
CN (1) CN115679447A (zh)
ZA (1) ZA202302132B (zh)

Also Published As

Publication number Publication date
CN115679447A (zh) 2023-02-03

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