ZA200500164B - OH and H resistant silicon material - Google Patents
OH and H resistant silicon material Download PDFInfo
- Publication number
- ZA200500164B ZA200500164B ZA200500164A ZA200500164A ZA200500164B ZA 200500164 B ZA200500164 B ZA 200500164B ZA 200500164 A ZA200500164 A ZA 200500164A ZA 200500164 A ZA200500164 A ZA 200500164A ZA 200500164 B ZA200500164 B ZA 200500164B
- Authority
- ZA
- South Africa
- Prior art keywords
- substances
- crucible
- single crystalline
- heating
- media
- Prior art date
Links
- 239000002210 silicon-based material Substances 0.000 title description 6
- 238000000034 method Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 48
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 42
- 239000000126 substance Substances 0.000 claims description 41
- 239000002178 crystalline material Substances 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- 230000003287 optical effect Effects 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 239000000835 fiber Substances 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000004044 response Effects 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052714 tellurium Inorganic materials 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 9
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000007789 sealing Methods 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 238000002834 transmittance Methods 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- JPIIVHIVGGOMMV-UHFFFAOYSA-N ditellurium Chemical compound [Te]=[Te] JPIIVHIVGGOMMV-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/12—Single-crystal growth directly from the solid state by pressure treatment during the growth
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/06—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in pot furnaces
- C03B5/08—Glass-melting pots
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B13/00—Rolling molten glass, i.e. where the molten glass is shaped by rolling
- C03B13/08—Rolling patterned sheets, e.g. sheets having a surface pattern
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B13/00—Rolling molten glass, i.e. where the molten glass is shaped by rolling
- C03B13/14—Rolling other articles, i.e. not covered by C03B13/01 - C03B13/12, e.g. channeled articles, briquette-shaped articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/06—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using as solvent a component of the crystal composition
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B14/00—Crucible or pot furnaces
- F27B14/04—Crucible or pot furnaces adapted for treating the charge in vacuum or special atmosphere
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Surface Treatment Of Optical Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39382902P | 2002-07-08 | 2002-07-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ZA200500164B true ZA200500164B (en) | 2006-06-28 |
Family
ID=30115653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ZA200500164A ZA200500164B (en) | 2002-07-08 | 2005-01-07 | OH and H resistant silicon material |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US7067006B2 (fr) |
| EP (1) | EP1540047A4 (fr) |
| KR (1) | KR20050025315A (fr) |
| CN (1) | CN1656029A (fr) |
| AU (1) | AU2002348527B2 (fr) |
| CA (1) | CA2491964C (fr) |
| EA (1) | EA008276B1 (fr) |
| NZ (1) | NZ537551A (fr) |
| WO (1) | WO2004005203A1 (fr) |
| ZA (1) | ZA200500164B (fr) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7161110B2 (en) | 2002-07-08 | 2007-01-09 | Czt, Inc. | Melting and vaporizing apparatus and method |
| JP5596027B2 (ja) | 2008-06-18 | 2014-09-24 | レイセオン カンパニー | カテーテル |
| WO2010014792A2 (fr) * | 2008-07-30 | 2010-02-04 | Sterling Lc | Procédé et dispositif permettant une variation par incréments de la longueur d’ondes pour analyser un tissu |
| US9060704B2 (en) * | 2008-11-04 | 2015-06-23 | Sarcos Lc | Method and device for wavelength shifted imaging |
| WO2011041728A2 (fr) | 2009-10-01 | 2011-04-07 | Jacobsen Stephen C | Dispositif d'imagerie acheminé par aiguille |
| WO2011041720A2 (fr) | 2009-10-01 | 2011-04-07 | Jacobsen Stephen C | Procédé et appareil de manoeuvre d'un micro-cathéter |
| US8717428B2 (en) | 2009-10-01 | 2014-05-06 | Raytheon Company | Light diffusion apparatus |
| US8828028B2 (en) | 2009-11-03 | 2014-09-09 | Raytheon Company | Suture device and method for closing a planar opening |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4738831A (en) * | 1986-10-31 | 1988-04-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method and apparatus for growing crystals |
| US5397372A (en) * | 1993-11-30 | 1995-03-14 | At&T Corp. | MCVD method of making a low OH fiber preform with a hydrogen-free heat source |
| DE69519384T2 (de) * | 1994-09-29 | 2001-05-23 | British Telecomm | Optische Faser mit Quantenpunkten |
| EP1433760B1 (fr) * | 1997-02-14 | 2008-05-14 | Nippon Telegraph and Telephone Corporation | Glasfaser-Verspleissungsstruktur |
| US6015765A (en) * | 1997-12-24 | 2000-01-18 | The United States Of America As Represented By The Secretary Of The Navy | Rare earth soluble telluride glasses |
| US6221153B1 (en) * | 1998-06-09 | 2001-04-24 | Trevor Percival Castor | Method for producing large crystals of complex molecules |
| US6074476A (en) * | 1998-07-10 | 2000-06-13 | Ball Semiconductor, Inc. | Non-contact processing of crystal materials |
| US6350397B1 (en) * | 1999-03-10 | 2002-02-26 | Aspen Research Corporation | Optical member with layer having a coating geometry and composition that enhance cleaning properties |
| US6304583B1 (en) * | 1999-07-26 | 2001-10-16 | The United States Of America As Represented By The Secretary Of The Air Force | Utilization of telluride quaternary nonlinear optic materials |
| US6400866B2 (en) * | 2000-03-04 | 2002-06-04 | Lucent Technologies Inc. | Decoupling of transverse spatial modes in microstructure optical fibers |
| US7161110B2 (en) * | 2002-07-08 | 2007-01-09 | Czt, Inc. | Melting and vaporizing apparatus and method |
-
2002
- 2002-10-05 US US10/480,042 patent/US7067006B2/en not_active Expired - Fee Related
- 2002-10-08 CA CA002491964A patent/CA2491964C/fr not_active Expired - Fee Related
- 2002-10-08 WO PCT/US2002/032003 patent/WO2004005203A1/fr not_active Application Discontinuation
- 2002-10-08 EP EP02782128A patent/EP1540047A4/fr not_active Withdrawn
- 2002-10-08 AU AU2002348527A patent/AU2002348527B2/en not_active Ceased
- 2002-10-08 KR KR1020057000225A patent/KR20050025315A/ko active IP Right Grant
- 2002-10-08 EA EA200500166A patent/EA008276B1/ru not_active IP Right Cessation
- 2002-10-08 CN CNA02829386XA patent/CN1656029A/zh active Pending
- 2002-10-08 NZ NZ537551A patent/NZ537551A/en not_active IP Right Cessation
-
2005
- 2005-01-07 ZA ZA200500164A patent/ZA200500164B/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP1540047A1 (fr) | 2005-06-15 |
| CA2491964C (fr) | 2009-12-29 |
| EP1540047A4 (fr) | 2007-04-18 |
| AU2002348527B2 (en) | 2008-06-19 |
| WO2004005203A1 (fr) | 2004-01-15 |
| US7067006B2 (en) | 2006-06-27 |
| EA008276B1 (ru) | 2007-04-27 |
| NZ537551A (en) | 2007-03-30 |
| CA2491964A1 (fr) | 2004-01-15 |
| EA200500166A1 (ru) | 2005-08-25 |
| AU2002348527A1 (en) | 2004-01-23 |
| KR20050025315A (ko) | 2005-03-14 |
| US20040165858A1 (en) | 2004-08-26 |
| CN1656029A (zh) | 2005-08-17 |
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