WO2026016897A1 - 一种脉冲偏压信号生成方法以及半导体工艺设备 - Google Patents

一种脉冲偏压信号生成方法以及半导体工艺设备

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Publication number
WO2026016897A1
WO2026016897A1 PCT/CN2025/106622 CN2025106622W WO2026016897A1 WO 2026016897 A1 WO2026016897 A1 WO 2026016897A1 CN 2025106622 W CN2025106622 W CN 2025106622W WO 2026016897 A1 WO2026016897 A1 WO 2026016897A1
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Prior art keywords
pulse
peak
iedf
bias signal
target
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PCT/CN2025/106622
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English (en)
French (fr)
Inventor
韦刚
李东彧
王景远
王蕾越
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes

Definitions

  • This application relates to the field of semiconductor process equipment technology, specifically to a pulse bias signal generation method and semiconductor process equipment.
  • Ion energy distribution is a key parameter determining the quality of plasma etching processes, typically represented by the ion energy distribution function (IEDF).
  • IEDF ion energy distribution function
  • this application aims to provide a pulse bias signal generation method and semiconductor process equipment to control ion energy according to the expected IEDF distribution to meet actual process requirements.
  • a method for generating a pulse bias signal comprising the following steps:
  • IEDF target ion energy distribution function
  • the pulse bias signal includes multiple pulse trains, each pulse train corresponds to each of the single-peak IEDs, and each pulse train includes multiple pulses, with the negative jump amplitude value of each pulse being the same.
  • a pulse train corresponding to the corresponding single-peak IEDF is created according to the duty cycle of each pulse to obtain a signal sequence, wherein the proportion of the number of pulses contained in each pulse train in the signal sequence is consistent with the proportion of the ion content of the corresponding single-peak IEDF.
  • the signal sequence is repeatedly output according to the negative jump amplitude value to output the pulse bias signal.
  • a pulse train corresponding to a single-peak IEDF is created according to each pulse duty cycle to obtain a signal sequence, including:
  • the number of pulses contained in the pulse train corresponding to each single-peak IEDF is determined respectively.
  • the corresponding pulse trains are determined according to the number of pulses and pulse duty cycle of each single-peak IEDF to obtain the signal sequence.
  • the number of pulses contained in the pulse train corresponding to each single-peak IEDF is determined, including:
  • obtaining the total number of pulses contained in each pulse train in the signal sequence includes:
  • the preset cycle frequency is the frequency at which the signal sequence is repeatedly output
  • the target parameters include ion concentration and electron temperature
  • the total number of pulses contained in each pulse train in the signal sequence is determined.
  • the target frequency is determined, wherein the pulse bias signal output according to the target frequency enables ions to reach the wafer surface after multiple pulse cycles.
  • the quotient of the target frequency and the preset cycle frequency is determined to be the total number of pulses contained in each pulse train in the signal sequence.
  • determining the target frequency based on the target parameter and the negative jump amplitude value includes:
  • the time for ions to cross the sheath within the process chamber is determined based on the target parameters and the negative jump amplitude value.
  • the reference frequency is determined based on the time and the preset number of cycles
  • the process of determining the pulse duty cycle of the pulse train corresponding to any of the single-peak IEDFs includes:
  • the pulse duty cycle of the pulse train is calculated using the following formula:
  • E ⁇ sub>p ⁇ /sub> represents the peak ion energy of a single-peak IEDF
  • e represents the electron charge
  • V out represents the negative jump amplitude value
  • the method before determining the pulse duty cycle of the corresponding pulse train based on the peak ion energy of the single-peak IEDF and the negative jump amplitude value of the pulse bias signal for each of the single-peak IEDFs, the method further includes: determining the negative jump amplitude value of the pulse bias signal based on each of the peak ion energy values, including:
  • the maximum value among the ion voltages required to generate each of the aforementioned ion energy peaks is used as the reference voltage value
  • repeatedly outputting the signal sequence according to the negative jump amplitude value to output a pulse bias signal includes:
  • driving signals are repeatedly output according to the pulse duty cycle of each pulse train in the signal sequence, so that the switch array converts the DC voltage into a corresponding pulse bias signal according to each pulse duty cycle.
  • this application provides a semiconductor process apparatus, including: a bias power supply, a bias electrode, and a controller, wherein...
  • the bias electrode is disposed in the wafer carrier device of the process chamber;
  • the bias power supply includes a DC power supply and a switching array, wherein...
  • the output terminal of the DC power supply is connected to the input terminal of the switch array, and the output terminal of the switch array is connected to the bias electrode.
  • the controller is connected to the control terminals of the DC power supply and the switch array, respectively.
  • the controller includes a memory and a processor.
  • the memory is used to store instructions
  • the processor is used to execute the pulse bias signal generation method as described in any of the first aspects of this application according to the instructions stored in the memory.
  • the pulse bias signal generation method provided in this application first obtains a target IEDF, which records multiple single-peak IEDFs and the ion quantity ratio and ion energy peak value corresponding to each single-peak IEDF. Based on the ion energy peak value corresponding to each single-peak IEDF and the negative jump amplitude value of the pulse bias signal, the pulse duty cycle of the pulses contained in the pulse train corresponding to each single-peak IEDF is determined. Then, a pulse train corresponding to the single-peak IEDF is created according to each pulse duty cycle to obtain a signal sequence. Finally, the signal sequence is repeatedly output according to the negative jump amplitude value to obtain a pulse bias signal that controls the ion distribution according to the target IEDF.
  • This application repeatedly outputs pulse trains with the same negative jump amplitude value according to the signal sequence, that is, only the duty cycle of the output pulse bias signal needs to be adjusted to provide a pulse bias signal.
  • the time required to adjust the duty cycle is shorter, and the pulse bias signal can be switched rapidly to control the ion energy distribution according to the target IEDF, thereby meeting the actual process requirements.
  • Figure 1a is a waveform diagram of a pulse bias signal in the prior art.
  • Figure 1b shows the single-peak IEDF obtained by controlling the ions according to the pulse bias signal shown in Figure 1a.
  • Figure 2a is a waveform diagram of another pulse bias signal in the prior art.
  • Figure 2b shows the multi-peaked IEDF obtained by controlling ions according to the pulse bias signal shown in Figure 2a.
  • Figure 2c shows the ideal IEDF corresponding to the pulse bias signal shown in Figure 2a.
  • Figure 3 is a structural block diagram of a semiconductor process equipment provided in this application.
  • FIG. 4 is a flowchart of a pulse bias signal generation method provided in this application.
  • Figure 5 is a schematic diagram of a target IEDF.
  • FIGS 6a-6c are waveform diagrams of the pulse bias signal generation method provided in this application.
  • FIGS 7a-7c are another waveform diagram of the pulse bias signal generation method provided in this application.
  • FIG. 8 is a flowchart of a signal sequence generation method provided in this application.
  • Figure 9 is a waveform diagram of a signal sequence provided in this application.
  • IEDF ion energy distribution function
  • the waveform of the adjusted pulse bias signal includes four parts: a positive transition, a positive voltage, a negative transition, and a negative voltage ramp.
  • the ion energy can be controlled to exhibit a single-peak IEDF distribution as shown in Figure 1b.
  • the negative transition amplitude (Vout) of the pulse bias signal in related technologies determines the peak ion energy corresponding to the single-peak IEDF. Based on this, theoretically, by repeatedly providing pulse bias signals with different negative voltage transition amplitudes, the ion energy can be controlled to exhibit an IEDF distribution of any shape.
  • the inventors discovered that in related technologies, the negative jump amplitude of the pulse bias signal is provided by a DC power supply. Adjusting the DC power supply output voltage takes a long time, and the negative jump amplitude cannot be rapidly modulated.
  • a pulse bias signal as shown in Figure 2a, which includes a pulse bias signal with a negative jump amplitude of Vout1 and a pulse bias signal with a negative jump amplitude of Vout2
  • the ideal IEDF should be a bimodal IEDF as shown in Figure 2c.
  • the energy distribution effect is as shown in Figure 2b, which is clearly far from the theoretical two independent single-peak IEDF shown in Figure 2c.
  • the lower electrode system includes, for example, a bias power supply 20 and a bias electrode 30.
  • the bias power supply 20 includes a DC power supply 210 and a switch array 220.
  • the bias power supply 20 further includes a drive signal generation circuit 230.
  • the upper electrode system includes, for example, an RF power supply 40, an impedance matching circuit 50, and a coupling coil 60.
  • the upper electrode system includes a coupling coil; for capacitively coupled plasma (CCP) equipment, the upper electrode system includes an upper electrode plate, such as a flow equalizer.
  • a wafer carrier 710 is disposed within the process chamber 70 opposite to the coupling coil 60.
  • the wafer carrier 710 may include, for example, an electrostatic chuck or a mechanical chuck, and is used to carry the wafer 80 to be processed.
  • the output of the RF power supply 40 is connected to the impedance matching circuit 50, which is connected to the coupling coil 60. After the RF power supply 40 is started, it can apply RF power to the coupling coil 60 through the impedance matching circuit 50, thereby generating plasma inside the process chamber 70.
  • the output terminal of the drive signal generation circuit 230 is connected to the control terminal of the switch array 220, the input terminal of the switch array 220 is connected to the output terminal of the DC power supply 210, and the output terminal of the switch array 220 is connected to the bias electrode 30, which is disposed inside the wafer carrier device 710.
  • the controller 10 is connected to both the DC power supply 210 and the control terminal of the drive signal generation circuit 230. It should be noted that if the control signal output by the controller 10 is sufficient to drive the switch array 220, the drive signal generation circuit 230 can be omitted, that is, the output terminal of the controller 10 is directly connected to the control terminal of the switch array 220. Furthermore, as in some embodiments, the controller 10 is also connected to the radio frequency power supply 40.
  • the controller 10 controls the operation of the RF power supply 40 and applies RF power to the coupling coil 60 through the impedance matching circuit 50, thereby generating plasma inside the process chamber 70. Further, the controller 10 executes the pulse bias signal generation method provided in this application, controlling the lower electrode system to provide a pulse bias signal to the wafer 80 carried by the wafer carrier 710, thereby controlling the plasma in the process chamber 70 to be distributed according to the target IEDF. It should be noted that the process of the controller 10 controlling the upper electrode system to generate plasma can be implemented with reference to related technologies, and this application does not limit it in this regard.
  • the pulse bias signal generation method After acquiring a target IDF that records multiple single-peak IDFs and the ion quantity ratio and ion energy peak value corresponding to each single-peak IDF, determines the pulse duty cycle of the pulse train corresponding to each single-peak IDF based on the ion energy peak value corresponding to each single-peak IDF and the negative jump amplitude value of the pulse bias signal. Then, a pulse train corresponding to the corresponding single-peak IDF is created according to each pulse duty cycle to obtain a signal sequence. Finally, the signal sequence is repeatedly output according to the negative jump amplitude value to obtain a pulse bias signal that controls the ion distribution according to the target IDF.
  • the method provided in this application only needs to adjust the duty cycle of the output pulse bias signal to provide a pulse bias signal. Compared with the prior art, the method provided in this application does not need to control the ion energy distribution by adjusting the negative jump amplitude value of the pulse bias signal, and the time required to adjust the duty cycle is shorter. It can achieve rapid switching of the pulse bias signal, thereby controlling the ion energy distribution according to the target IDF and meeting the actual process requirements.
  • the pulse bias signal generation method provided in this application includes the following steps:
  • the target IEDF mentioned in the embodiments of this application refers to the IEDF required to meet certain process requirements, which is also the ideal effect of ion energy distribution control.
  • related technologies have been able to control single-peak IEDFs. Therefore, the embodiments of this application mainly describe the case of a target IEDF including multiple single-peak IEDFs.
  • the target IEDF also records the ion quantity ratio and ion energy peak value corresponding to each of its included single-peak IEDFs.
  • a pulse bias signal that can control the ion distribution to a single-peak IEDF can also be generated, which is also within the scope of protection of this application.
  • the target IEDF in Figure 5 includes four single-peak IEDFs. From right to left in Figure 5, the peak ion energies of the four single-peak IEDFs are 240 eV, 210 eV, 180 eV, and 150 eV, respectively, and the ion content percentages corresponding to the four single-peak IEDFs are 10%, 20%, 30%, and 40%, respectively.
  • the role of the various information recorded in the target IEDF will be discussed in subsequent sections and will not be elaborated here.
  • n represents the pulse duty cycle of the pulse train
  • E ⁇ sub>p ⁇ /sub> represents the peak ion energy of a single-peak IEDF
  • e represents the electron charge
  • V out represents the negative jump amplitude value
  • formula (1) Based on formula (1), it can be seen that when the negative jump amplitude value Vout is determined, the ion energy peak value Ep corresponds directly to the pulse duty cycle m. Therefore, formula (1) can be appropriately modified to calculate the pulse duty cycle of the pulse train corresponding to each single peak IEDF.
  • the modified formula (2) is shown below.
  • multiple single-peak IDFs are recorded as target single-peak IDFs, the ion energy peak value of the target single-peak IDF is substituted into E p , and the negative jump amplitude value is substituted into V out .
  • the calculated result is the pulse duty cycle m of the pulse train corresponding to the target single-peak IDF.
  • the negative jump amplitude value of the pulse bias signal can be determined based on the peak energy of each ion.
  • the pulse bias signal includes positive transitions (i.e., rising edges) and negative transitions (i.e., falling edges), where the voltage drop value corresponding to the transition from high level to low level is the negative transition amplitude.
  • the maximum ion energy generated by the pulse bias signal is greater than the maximum ion energy peak value in the target IEDF.
  • the maximum value among the ion voltages required to generate each ion energy peak value is used as the reference voltage value, and any amplitude greater than or equal to the reference voltage value is used as the negative jump amplitude value of the pulse bias signal.
  • the pulse bias signal generated based on this negative jump amplitude value can meet the actual process requirements. Under the premise of meeting the above basic requirements, this application does not limit the specific value of the negative jump amplitude value.
  • the peak ion energies of the four single-peak IEDs are 240 eV, 210 eV, 180 eV, and 150 eV, respectively.
  • the largest peak ion energy is 240 eV, corresponding to an ion voltage of 240 V. Therefore, 240 V is the aforementioned reference voltage.
  • any amplitude greater than or equal to 240 V such as 300 V or 290 V, can be used as the negative jump amplitude value.
  • the negative jump amplitude value of the pulse bias signal is the negative jump amplitude value of each pulse in the pulse train corresponding to each single-peak IED.
  • the negative jump amplitude value of each pulse in the pulse bias signal generated according to the pulse bias signal generation method provided in this application is the same.
  • the entire control process does not require adjusting the negative jump amplitude value of the pulse bias signal, and there is no gradual transition process of the negative jump amplitude value. Consequently, many ion energies outside the set range are not generated. Therefore, the ion energy can be controlled to follow the target IED distribution to meet the actual process requirements.
  • S120 Create pulse trains corresponding to the single-peak IEDF according to the duty cycle of each pulse to obtain the signal sequence.
  • the signal sequence described in this application includes pulse trains corresponding to each single-peak IED in the target IED, and for any single-peak IED, the signal sequence includes at least one corresponding pulse. Based on the aforementioned steps, it is known that the duty cycles of the pulse bias signals required to control ions according to different single-peak IED distributions are different. Therefore, when constructing the signal sequence, it is necessary to determine the corresponding pulse train for each single-peak IED in the target IED according to the pulse duty cycle determined in the aforementioned steps.
  • the proportion of pulses in the pulse train corresponding to each single-peak IEDF in the signal sequence is consistent with the proportion of ions in the target IEDF corresponding to that single-peak IEDF.
  • the proportion of pulses in each pulse train in the signal sequence determines the proportion of ions in each single-peak IEDF in the target IEDF.
  • the proportion of ions in each single-peak IEDF is 40%, 30%, 20%, and 10%, respectively.
  • the proportion of the number of pulses contained in the pulse train corresponding to each single-peak IEDF is also 40%, 30%, 20%, and 10%.
  • the pulse trains within the obtained signal sequence are repeatedly output according to the negative jump amplitude value. That is, after outputting the pulse train with the first pulse duty cycle, the negative jump amplitude value is kept constant, the pulse duty cycle is switched, and the pulse train with the second pulse duty cycle is output, until all the pulse trains in the output signal sequence are output. Then, the signal sequence is output again according to the above content. By repeating this process, the pulse bias signal that controls the ions to be distributed according to the target IEDF can be obtained.
  • the controller 10 controls the operation of the RF power supply 40 and applies RF power to the coupling coil 60 through the impedance matching circuit 50, thereby generating plasma inside the process chamber 70. Furthermore, the controller 10 controls the DC power supply 210 to output a DC voltage according to the negative jump amplitude value. Simultaneously, it controls the drive signal generation circuit 230 to repeatedly output drive signals according to the pulse duty cycle of each pulse train in the signal sequence. This drives the switch array 220 to convert the DC voltage into corresponding pulses according to each pulse duty cycle, obtaining a pulse bias signal. Finally, the obtained pulse bias signal is output to the bias electrode 30 located inside the wafer carrier device 710 to control the ion energy during the process of ions reaching the wafer surface, thereby controlling the ions to distribute according to the target IEDF.
  • the electrode and the wafer act as a capacitor.
  • the wafer surface also senses a high level. This high level on the wafer surface, combined with the plasma inside the process chamber, creates an accelerating electric field that attracts electrons to the wafer surface, causing a decrease in surface voltage.
  • the pulsed bias signal is at a low level, the wafer surface voltage becomes negative, attracting ions to the surface. Because the velocity of ions is much lower than that of electrons, the voltage drop on the wafer surface caused by electrons is much greater than the voltage rise caused by ions.
  • a stable voltage waveform is only formed on the wafer surface after multiple pulse cycles.
  • the key to the repetitive output signal sequence is to ensure that the final output pulse bias signal can control the ions to reach the wafer surface after multiple pulse cycles. If the ions undergo multiple pulse cycles before reaching the wafer surface, they will no longer be affected in real time by the sheath voltage waveform formed on the wafer surface, but rather by the average sheath voltage. In this case, the ions will be accelerated to the wafer surface with an approximately constant sheath voltage within 100% of the pulse cycle. This effect is extremely effective in improving the control accuracy of ion energy distribution. Of course, this is also the key premise for this application to control the ion energy distribution by adjusting the pulse duty cycle.
  • the time it takes for ions emitted from the plasma to cross the sheath and reach the wafer surface is generally several hundred ns. This means that ions can reach the wafer surface in about 1/4 of a pulse cycle. Due to the short time, the ions can be affected in real time by the sheath voltage waveform formed on the wafer surface. For the periodic sheath voltage waveform that the ions respond to in real time, the ion energy of the ions that bombard the wafer surface depends on the phase of the ions entering the sheath. That is, the ions will be accelerated to the wafer surface with a constant sheath voltage within about 80% of the pulse cycle.
  • the negative voltage jump amplitude of the pulse bias signal determines the specific effect of the ion energy distribution. Therefore, changing the frequency and duty cycle of the pulse bias signal in related technologies will not change the corresponding ion energy distribution.
  • the pulse bias signal generation method repeatedly outputs pulse bias signals with the same negative jump amplitude value according to the signal sequence. That is, only the duty cycle of the output pulse train needs to be adjusted to provide the pulse bias signal, without adjusting the negative jump amplitude value corresponding to each pulse train.
  • the time required to adjust the duty cycle is shorter, and the pulse bias signal can be switched rapidly, thereby controlling the ion energy to be distributed according to the target IEDF and meeting the actual process requirements.
  • the duty cycle of the pulse train is determined based on the peak ion energy and the negative jump amplitude. Furthermore, the duty cycles of pulse trains corresponding to different single-peak IEDs are different. When outputting the pulse bias signal, the duty cycle needs to be adjusted to output different pulse bias signals. It can be understood that for any pulse in the pulse train, the duty cycle is equal to the ratio of the pulse width to the pulse period. Based on this, adjusting the duty cycle naturally corresponds to two implementation methods: one is to keep the pulse period constant and adjust the pulse width; the other is to keep the pulse width constant and adjust the pulse period.
  • the ion content of one single-peak IEDF is 25%, and the ion content of the other single-peak IEDF is 75%.
  • Figures 6a to 6c show the waveform relationship when the pulse period remains constant and the pulse width is adjusted.
  • Figure 6a shows the waveform of the pulse bias signal.
  • the signal sequence includes four pulse bias signals with the same pulse period. The first three pulse bias signals correspond to the first pulse width, and the last pulse bias signal corresponds to the second pulse width.
  • the solid line represents the voltage waveform induced on the wafer surface when the pulse bias signal shown in Figure 6a is applied, and the dashed line represents the average sheath voltage waveform actually experienced by the ions.
  • Figure 6c shows the control result of the ion energy distribution, i.e., the curve corresponding to the target IEDF.
  • Figures 7a to 7c show the waveform relationship when the pulse width remains constant and the pulse period is adjusted.
  • Figure 7a is a waveform diagram of the pulse bias signal.
  • the signal sequence includes four pulse bias signals with the same pulse width. The first three pulse bias signals correspond to the first pulse period, and the last pulse bias signal corresponds to the second pulse period.
  • the solid line represents the voltage waveform induced on the wafer surface when the pulse bias signal shown in Figure 7a is applied, and the dashed line represents the average sheath voltage waveform actually experienced by the ions.
  • Figure 7c shows the control result of the ion energy distribution, i.e., the curve corresponding to the target IEDF.
  • the pulse bias signal generation method provided in this application can not only adjust the ion energy by adjusting the negative jump amplitude, but also adjust the ion energy distribution by adjusting the pulse width and pulse period of the pulse bias signal. This increases the selectable parameters for adjusting the ion energy distribution and reduces the difficulty of realizing arbitrary-shaped IEDFs.
  • the pulse bias signal provided in this application is a standard pulse signal and does not include the negative voltage ramp of the shaped pulse bias signal shown in Figure 1a. This helps to reduce the difficulty of outputting the pulse bias signal.
  • this application provides a method for determining the signal sequence, as shown in Figure 8. This method includes the following steps.
  • the target parameters within the process chamber can be obtained first.
  • the target parameters within the process chamber mainly include ion concentration and electron temperature.
  • the ion concentration and electron temperature within the process chamber can be obtained using a Langmuir probe, or other plasma diagnostic equipment. This application does not limit the specific method for obtaining the aforementioned target parameters.
  • the proportion of each pulse bias signal in the signal sequence is consistent with the proportion of ions in the corresponding single-peak IEDF.
  • the proportion of ions in each single-peak IEDF is already known through the target IEDF. Based on this, the total number of pulse bias signals included in the signal sequence can be determined, and thus the number of pulse bias signals corresponding to each single-peak IEDF can be obtained.
  • the first step is to determine the total number of pulse bias signals in the signal sequence based on the aforementioned target parameters and negative jump amplitude value.
  • the preset cycle frequency is first determined.
  • This preset cycle frequency is the frequency of the repeated output signal sequence.
  • the setting of the preset cycle frequency mainly considers the performance parameters of the bias power supply in the semiconductor process equipment shown in Figure 3 and related process requirements. This application does not limit the specific value of the preset cycle frequency.
  • the preset cycle frequency can be selected in the range of 10Hz-10kHz.
  • the target frequency is determined.
  • the pulse bias signal output according to this target frequency will enable the ions to reach the wafer surface after multiple pulse cycles.
  • the quotient of the target frequency and the preset cycle frequency is calculated, and the total number of pulse bias signals in the signal sequence is recorded.
  • the product of the ion content ratio of each single-peak IEDF and the obtained total number is calculated to obtain the number of pulses in the pulse train corresponding to the corresponding single-peak IEDF.
  • S1302 Determine the corresponding pulse train according to the number of pulses and pulse duty cycle corresponding to each single peak IEDF to obtain the signal sequence.
  • the pulse duty cycle of the pulse bias signal corresponding to each single-peak IEDF we have obtained the pulse duty cycle of the pulse bias signal corresponding to each single-peak IEDF, as well as the number of pulses in the signal sequence.
  • the determination of the pulse duty cycle can be achieved by adjusting at least one of the pulse width and pulse period, as described above, and will not be repeated here.
  • a pulse bias signal can be output as described above to control the ions to distribute according to the target IEDF, which will not be repeated here.
  • Step S1 Obtain the target IEDF.
  • the target IEDF includes four single-peak IEDFs. From left to right in Figure 5, the peak ion energies of the four single-peak IEDFs are 150 eV, 180 eV, 210 eV and 240 eV, respectively. The ion content of the four single-peak IEDFs is 40%, 30%, 20% and 10%, respectively.
  • Step S2 Determine the negative jump amplitude value of the pulse bias signal based on the peak energy of each ion.
  • the peak ion energies of the four single-peak IEDFs are 240 eV, 210 eV, 180 eV and 150 eV, respectively.
  • the largest peak ion energy is 240 eV, which corresponds to an ion voltage of 240 V. Based on this, any amplitude greater than or equal to 240 V, such as 300 V, can be used as the negative jump amplitude.
  • Step S3 For each single-peak IEDF, determine the pulse duty cycle of the corresponding pulse bias signal based on the peak ion energy and negative jump amplitude of the single-peak IEDF.
  • the negative jump amplitude is 300V.
  • the pulse duty cycle of the pulse bias signal corresponding to each single-peak IED is calculated. Then, the pulse duty cycle of the pulse bias signal of the single-peak IED with an ion energy peak value of 240eV is 0.2, the pulse duty cycle of the pulse bias signal of the single-peak IED with an ion energy peak value of 210eV is 0.3, the pulse duty cycle of the pulse bias signal of the single-peak IED with an ion energy peak value of 180eV is 0.4, and the pulse duty cycle of the pulse bias signal of the single-peak IED with an ion energy peak value of 150eV is 0.5.
  • Step S4 Determine the time it takes for ions to cross the sheath in the process chamber based on the ion concentration, electron temperature, and negative jump amplitude value within the process chamber.
  • the ion concentration and electron temperature within the process chamber can be obtained using Langmuir probes or other plasma diagnostic equipment, which will not be detailed here.
  • ⁇ sub> i ⁇ /sub> represents the time it takes for ions to cross the sheath
  • k represents the Boltzmann constant
  • Te represents electron temperature
  • n ⁇ sub>0 ⁇ /sub> represents the ion concentration
  • ⁇ ⁇ sub>0 ⁇ /sub> represents the vacuum permittivity
  • M represents the ion mass
  • V out represents the negative jump amplitude value
  • Step S5 Determine the reference frequency based on the time it takes for ions to cross the sheath and the preset number of cycles.
  • the key to the method provided in this application is to ensure that ions need to pass through multiple pulse cycles to reach the wafer surface when passing through the sheath.
  • the preset number of cycles mentioned in this step refers to the number of pulse cycles required for ions to reach the wafer surface.
  • the reference frequency can be calculated using the following formula:
  • fmin represents the reference frequency
  • ⁇ ⁇ sub>i ⁇ /sub> represents the time it takes for ions to cross the sheath
  • N represents the preset number of cycles.
  • the preset number of cycles should be greater than or equal to 5.
  • Step S6 Determine any frequency greater than or equal to the reference frequency as the target frequency.
  • the reference frequency calculated according to formula (4) is 10MHz, based on this, 10MHz or other frequencies greater than 10MHz can be selected as the target frequency.
  • Step S7 Based on the target frequency and the preset cycle frequency of the signal sequence, determine the total number of pulses contained in each pulse train in the signal sequence.
  • the preset cycle frequency can be selected in the range of 10Hz-10kHz. For example, if the preset cycle frequency is 10kHz, then the ratio of the target frequency (10MHz) to the preset cycle frequency is 1000, which is the total number of pulses contained in each pulse train in the signal sequence.
  • Step S8 Calculate the product of the ion content ratio of each single-peak IEDF and the total number of peaks to obtain the number of pulses corresponding to the corresponding single-peak IEDF.
  • the ion content of the four peak IEDFs from left to right is 40%, 30%, 20%, and 10%, respectively.
  • the percentage of pulse bias signals corresponding to the four single-peak IEDFs is also 40%, 30%, 20%, and 10%.
  • the pulse bias signal of the single-peak IED with an ion energy peak of 150 eV has 400 pulses
  • the pulse bias signal of the single-peak IED with an ion energy peak of 180 eV has 300 pulses
  • the pulse bias signal of the single-peak IED with an ion energy peak of 210 eV has 200 pulses
  • the pulse bias signal of the single-peak IED with an ion energy peak of 240 eV has 100 pulses.
  • Step S9 Determine the corresponding pulse train according to the number of pulses and pulse duty cycle corresponding to each single peak IEDF to obtain the signal sequence.
  • Step S10 Repeat the output signal sequence according to the preset cycle period (i.e., 10kHz) to output a pulse bias signal.
  • the pulse bias signal generation method repeatedly outputs a signal sequence composed of pulse bias signals with different pulse duty cycles.
  • the pulse duty cycle i.e., pulse width and/or pulse period
  • the pulse bias signal can be rapidly adjusted. This solves the problem in the prior art where the adjustment of the negative jump amplitude of the pulse bias signal is time-consuming and cannot accurately control the ion energy distribution. It enables the distribution control of IEDFs of arbitrary shapes, significantly improves the control accuracy of ion energy distribution, and meets process requirements.
  • this embodiment also provides a computer-readable storage medium, such as a floppy disk, optical disk, hard disk, flash memory, USB flash drive, SD (Secure Digital Memory Card), MMC (Multimedia Card), etc., in which one or more instructions for implementing the above steps are stored.
  • a computer-readable storage medium such as a floppy disk, optical disk, hard disk, flash memory, USB flash drive, SD (Secure Digital Memory Card), MMC (Multimedia Card), etc.
  • the processors execute the pulse bias signal generation method described above.
  • embodiments of this application may also be computer program products, which include computer program instructions that, when executed by a processor, cause the processor to perform the steps in the pulse bias signal generation methods according to various embodiments of this application as described above.
  • Computer program products can be written in any combination of one or more programming languages to perform the operations of the embodiments of this application.
  • the programming languages include object-oriented programming languages such as Java and C++, as well as conventional procedural programming languages such as C or similar languages.
  • the program code can be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

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Abstract

本申请提供一种脉冲偏压信号生成方法以及半导体工艺设备，应用于半导体工艺设备技术领域，该方法获取目标IEDF，该目标IEDF记载多个单峰IEDF以及各单峰IEDF对应的离子量占比和离子能量峰值，并基于各单峰IEDF对应的离子能量峰值和脉冲偏压信号的负跳变幅值确定各单峰IEDF对应的脉冲串所包含脉冲的脉冲占空比，然后按照各脉冲占空比创建相应单峰IEDF对应的脉冲串得到信号序列，最后按照负跳变幅值重复输出信号序列，以输出脉冲偏压信号，相较于现有技术，本申请调节占空比所需时间更短，能够实现脉冲偏压信号的迅速切换，从而控制离子能量按照目标IEDF分布，满足实际工艺需求。

Description

一种脉冲偏压信号生成方法以及半导体工艺设备 技术领域
本申请涉及半导体工艺设备技术领域，具体涉及一种脉冲偏压信号生成方法以及半导体工艺设备。
背景技术
离子能量分布是决定等离子体刻蚀工艺质量的关键参数，通常由离子能量分布函数(Ion Energy Distribution Function，IEDF)表示。而随着半导体工艺技术的不断发展，如何控制离子能量按照任意形状IEDF分布，以满足不同半导体工艺要求，成为本领域技术人员最重要的研究课题之一。
现有技术通过调整脉冲偏压信号波形控制离子能量呈单峰IEDF分布，基于此，在理论上通过提供具备不同负电压跳变幅值的脉冲偏压信号，即可控制离子能量按照任意形状IEDF分布。然而，现有技术中脉冲偏压信号的负跳变幅值由直流电源提供，调节直流电源输出电压所需时间较长，负跳变幅值并不能实现快速调制，这会导致实际的能量分布效果与理论上两个独立的单峰IEDF相去甚远。由此可见，现有技术无法控制离子能量按照预期的IEDF分布，难以满足实际工艺需求。
发明内容
有鉴于此，本申请致力于提供一种脉冲偏压信号生成方法以及半导体工艺设备，控制离子能量按照预期IEDF分布，满足实际工艺需求。
根据本申请的第一方面，提供了一种脉冲偏压信号生成方法，包括以下步骤：
获取目标离子能量分布函数IEDF，所述目标IEDF包括多个单峰IEDF以及各所述单峰IEDF对应的离子量占比和离子能量峰值；
针对每一个所述单峰IEDF，基于该单峰IEDF的离子能量峰值和所述脉冲偏压信号的负跳变幅值，确定相应脉冲串所包含脉冲的脉冲占空比，所述脉冲偏压信号包括多个所述脉冲串，各个所述脉冲串与各个所述单峰IEDF相对应，所述脉冲串包括多个脉冲，各个脉冲的所述负跳变幅值为相同值；
按照各所述脉冲占空比创建相应单峰IEDF对应的脉冲串，得到信号序列，其中，各所述脉冲串包含的脉冲个数在所述信号序列中的个数占比与相应单峰IEDF的离子量占比一致；
按照所述负跳变幅值重复输出所述信号序列，以输出所述脉冲偏压信号。
在一些实施例中，按照各所述脉冲占空比创建相应单峰IEDF对应的脉冲串，得到信号序列，包括：
基于各所述单峰IEDF的离子量占比，分别确定各所述单峰IEDF对应的脉冲串包含的脉冲个数；
分别按照各所述单峰IEDF对应的脉冲个数和脉冲占空比确定相应的脉冲串，得到信号序列。
在一些实施例中，基于各所述单峰IEDF的离子量占比，分别确定各所述单峰IEDF对应的脉冲串包含的脉冲个数，包括：
获取所述信号序列中各所述脉冲串所包含脉冲的总个数；
分别计算各所述单峰IEDF的离子量占比与所述总个数的乘积，得到相应单峰IEDF对应的脉冲个数。
在一些实施例中，获取所述信号序列中各所述脉冲串所包含脉冲的总个数，包括：
获取预设循环频率以及目标参数，所述预设循环频率为重复输出所述信号序列的频率，所述目标参数包括离子浓度以及电子温度；
基于所述预设循环频率、所述目标参数以及所述负跳变幅值，确定所述信号序列中各所述脉冲串所包含脉冲的总个数。
在一些实施例中，基于所述预设循环频率、所述目标参数以及所述负跳变幅值，确定所述信号序列中各所述脉冲串所包含脉冲的总个数，包括：
基于所述目标参数以及所述负跳变幅值，确定目标频率，其中，按照所述目标频率输出的脉冲偏压信号能够使离子经过多个脉冲周期后到达晶片表面；
确定所述目标频率与所述预设循环频率的商为信号序列中各所述脉冲串包含脉冲的总个数。
在一些实施例中，基于所述目标参数以及所述负跳变幅值，确定目标频率，包括：
获取预设周期数，所述预设周期数为离子到达晶片表面所需的脉冲周期的个数；
根据所述目标参数以及所述负跳变幅值，确定工艺腔室内离子穿越鞘层的时间；
根据所述时间以及所述预设周期数，确定参考频率；
确定任一大于或等于所述参考频率的频率作为目标频率。
在一些实施例中，确定任一所述单峰IEDF对应的脉冲串的脉冲占空比的过程，包括：
按照下式计算脉冲串的脉冲占空比：
其中，m表示脉冲占空比；
Ep表示单峰IEDF的离子能量峰值；
e表示电子电荷量；
Vout表示所述负跳变幅值。
在一些实施例中，在针对每一个所述单峰IEDF，基于该单峰IEDF的离子能量峰值和所述脉冲偏压信号的负跳变幅值，确定相应脉冲串的脉冲占空比之前，所述方法还包括：基于各所述离子能量峰值确定脉冲偏压信号的负跳变幅值，包括：
将生成各所述离子能量峰值所需的离子电压中的最大值，作为参考电压值；
确定任一大于或等于所述参考电压值的幅值作为脉冲偏压信号的负跳变幅值。
在一些实施例中，按照所述负跳变幅值重复输出所述信号序列，以输出脉冲偏压信号，包括：
控制直流电源按照所述负跳变幅值输出直流电压；
以及，重复的按照所述信号序列内各脉冲串的脉冲占空比输出驱动信号，以使开关阵列按照各所述脉冲占空比将所述直流电压转为相应的脉冲偏压信号。
第二方面，本申请提供一种半导体工艺设备，包括：偏压电源、偏压电极以及控制器，其中，
所述偏压电极设置于工艺腔室的晶片承载装置中；
所述偏压电源包括直流电源以及开关阵列，其中，
所述直流电源的输出端与所述开关阵列的输入端相连，所述开关阵列的输出端与所述偏压电极相连；
所述控制器分别与所述直流电源以及所述开关阵列的控制端相连，所述控制器包括存储器和处理器，所述存储器用于存储指令，所述处理器用于根据所述存储器中存储的指令，执行如本申请第一方面任一项所述的脉冲偏压信号生成方法。
基于上述内容，本申请提供的脉冲偏压信号生成方法，首先获取目标IEDF，该目标IEDF记载多个单峰IEDF以及各单峰IEDF对应的离子量占比和离子能量峰值，并基于各单峰IEDF对应的离子能量峰值以及脉冲偏压信号的负跳变幅值，确定各单峰IEDF对应的脉冲串所包含脉冲的脉冲占空比，然后按照各脉冲占空比创建相应单峰IEDF对应的脉冲串得到信号序列，最后按照负跳变幅值重复输出信号序列，即可得到控制离子按照目标IEDF分布的脉冲偏压信号，本申请按照信号序列重复输出对应相同负跳变幅值的各脉冲串，即仅需要调整所输出的脉冲偏压信号的占空比即可提供脉冲偏压信号，相较于现有技术通过调整脉冲偏压信号的负跳变幅值控制离子能量分布，调节占空比所需时间更短，能够实现脉冲偏压信号的迅速切换，从而控制离子能量按照目标IEDF分布，满足实际工艺需求。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1a是现有技术中一种脉冲偏压信号的波形图。
图1b是按照图1a所示脉冲偏压信号控制离子所得的单峰IEDF。
图2a是现有技术中另一种脉冲偏压信号的波形图。
图2b是按照图2a所示脉冲偏压信号控制离子所得的多峰IEDF。
图2c是图2a所示脉冲偏压信号对应的理想IEDF。
图3是本申请提供的一种半导体工艺设备的结构框图。
图4是本申请提供的一种脉冲偏压信号生成方法的流程图。
图5是一种目标IEDF的示意图。
图6a-图6c是本申请提供的脉冲偏压信号生成方法的一种波形关系图。
图7a-图7c是本申请提供的脉冲偏压信号生成方法的另一种波形关系图。
图8是本申请提供的一种信号序列生成方法的流程图。
图9是应用本申请提供的一种信号序列的波形图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
对于各向异性等离子刻蚀的工艺过程，决定工艺质量的关键参数包括与晶片表面相互作用的离子的种类、数量和能量分布，其中，离子能量分布通常由离子能量分布函数(Ion Energy Distribution Function，IEDF)表示。而随着半导体工艺技术的不断发展，对于刻蚀轮廓的控制要求越来越严格(例如：高深宽比刻蚀技术等)，因此，如何控制离子能量按照任意形状IEDF分布，以满足不同半导体工艺要求，成为本领域技术人员最重要的研究课题之一。
相关技术通过调整脉冲偏压信号波形控制离子能量呈单峰IEDF分布，结合图1a所示，调整后的脉冲偏压信号的波形包括正跳变、正电压、负跳变以及负电压斜坡四部分，通过如图1a所示的脉冲偏压信号，即可控制离子能量呈图1b所示的单峰IEDF分布，并且，相关技术中脉冲偏压信号的负跳变幅值(即Vout)决定了单峰IEDF对应的离子能量峰值，基于此，在理论上，通过重复提供具备不同负电压跳变幅值的脉冲偏压信号，即可控制离子能量按照任意形状IEDF分布。
然而，发明人研究发现，相关技术中脉冲偏压信号的负跳变幅值由直流电源提供，调节直流电源输出电压所需时间较长，负跳变幅值并不能实现快速调制。比如，提供如图2a所示的脉冲偏压信号，该脉冲偏压信号包括负跳变幅值为Vout1的脉冲偏压信号以及负跳变幅值为Vout2的脉冲偏压信号，其对应的理想IEDF应如图2c所示的双峰IEDF。但在实际控制过程中，能量分布效果却如图2b所示，显然，与图2c所示的理论上的两个独立的单峰IEDF相去甚远。这是因为负跳变幅值由Vout1切换到Vout2的实际过程是由Vout1慢慢过渡到Vout2，过渡过程中或产生很多设定范围以外的离子能量，因此导致最终得到如图2b所示的能量分布效果。由此可见，相关技术无法控制离子能量按照预期的IEDF分布，难以满足实际工艺需求。并且，相关技术中脉冲偏压信号的频率通常为100kHz至1MHz，对于更高频率的脉冲偏压信号，尚无对应的控制离子能量分布的方案。
为解决上述技术问题，本申请提供一种半导体工艺设备，包括：控制器10、工艺腔室70、上电极系统以及下电极系统。结合图3所示，下电极系统例如包括偏压电源20以及偏压电极30，其中，偏压电源20包括直流电源210以及开关阵列220，在一些实施例中，偏压电源20还包括驱动信号生成电路230。上电极系统例如包括射频电源40、阻抗匹配电路50以及耦合线圈60。本领域技术人员应当理解，对于电感耦合等离子体(ICP)设备而言，上电极系统包括耦合线圈；对于电容耦合等离子体(CCP)设备而言，上电极系统包括上电极板，例如可以是匀流板。工艺腔室70内设置有与耦合线圈60相对设置的晶片承载装置710，该晶片承载装置710例如可以包括静电卡盘、或机械卡盘等，晶片承载装置710用于承载待加工的晶片80。
在图3的示例中，射频电源40的输出端与阻抗匹配电路50相连，阻抗匹配电路50与耦合线圈60相连，射频电源40在启动后，即可通过阻抗匹配电路50对耦合线圈60施加射频功率，进而在工艺腔室70内部生成等离子体。
偏压电源20中，驱动信号生成电路230的输出端与开关阵列220的控制端相连，开关阵列220的输入端与直流电源210的输出端相连，开关阵列220的输出端与偏压电极30相连，偏压电极30则设置于晶片承载装置710内部。控制器10分别与直流电源210以及驱动信号生成电路230的控制端相连，需要说明的是，在控制器10输出的控制信号足以驱动开关阵列220动作的情况下，可以省略驱动信号生成电路230，即控制器10的输出端直接与开关阵列220的控制端相连。进一步的，作为一些实施例，控制器10还与射频电源40相连。
控制器10控制射频电源40运行，并通过阻抗匹配电路50对耦合线圈60施加射频功率，进而在工艺腔室70内部生成等离子体。进一步的，控制器10执行本申请提供的脉冲偏压信号生成方法，控制下电极系统向晶片承载装置710所承载的晶片80提供脉冲偏压信号，进而控制工艺腔室70内的等离子体按照目标IEDF分布。需要说明的是，控制器10控制上电极系统生成等离子体的过程，可参照相关技术实现，本申请对此不作限定。
基于上述半导体工艺设备的基本构成，本申请提供的脉冲偏压信号生成方法，在获取记载多个单峰IEDF以及各单峰IEDF对应的离子量占比和离子能量峰值的目标IEDF之后，基于各单峰IEDF对应的离子能量峰值以及脉冲偏压信号的负跳变幅值，确定各单峰IEDF对应的脉冲串的脉冲占空比，然后按照各脉冲占空比创建相应单峰IEDF对应的脉冲串得到信号序列，最后按照负跳变幅值重复输出信号序列，即可得到控制离子按照目标IEDF分布的脉冲偏压信号，本申请提供的方法仅需要调整所输出的脉冲偏压信号的占空比即可提供脉冲偏压信号，相较于现有技术，本申请提供的方法无需通过调整脉冲偏压信号的负跳变幅值控制离子能量分布，调节占空比所需时间更短，能够实现脉冲偏压信号的迅速切换，从而控制离子能量按照目标IEDF分布，满足实际工艺需求。
参见图4，本申请提供的脉冲偏压信号生成方法，包括以下步骤：
S100：获取目标IEDF。
本申请各实施例中述及的目标IEDF，即指为满足某种工艺要求所需的IEDF，亦是离子能量分布控制的理想效果。如前所述，相关技术已经能够实现单峰IEDF的控制，因此，本申请各实施例主要对包括多个单峰IEDF的目标IEDF的情况进行说明，进一步的，目标IEDF中还记载有其所包括的各单峰IEDF对应的离子量占比和离子能量峰值。当然，按照本申请提供的脉冲偏压信号生成方法，同样可以生成能够控制离子呈单峰IEDF分布的脉冲偏压信号，这同样属于本申请保护的范围内。
基于上述内容，以实现高选择比刻蚀多层掩膜结构为例，需要控制离子能量按照图5所示的目标IEDF分布。在图5所示目标IEDF中，包括四个单峰IEDF，在图5中自右向左，四个单峰IEDF的离子能量峰值依次为240eV、210eV、180eV以及150eV，四个单峰IEDF对应的离子量占比则依次为10％、20％、30％以及40％。对于目标IEDF中所记载的各类信息的作用，将在后续内容中展开，此处暂不详述。
S110：针对每一个单峰IEDF，基于该单峰IEDF的离子能量峰值和脉冲偏压信号的负跳变幅值，确定相应脉冲串的脉冲占空比。
经发明人研究发现，作用于晶片表面的离子能量可以通过公式(1)表示：
Ep＝eVout(1-m)         (1)
其中，m表示脉冲串的脉冲占空比；
Ep表示单峰IEDF的离子能量峰值；
e表示电子电荷量；
Vout表示负跳变幅值。
基于公式(1)可以看出，在负跳变幅值Vout确定的情况下，离子能量峰值Ep与脉冲占空比m直接对应，因此，可对公式(1)做适当变形后，用于计算各单峰IEDF所对应的脉冲串的脉冲占空比。变形后所得公式(2)如下所示。
基于上述内容，在一些实施例中，分别将目标IEDF记载多个单峰IEDF作为目标单峰IEDF，将目标单峰IEDF的离子能量峰值带入Ep，将负跳变幅值带入Vout，所得计算结果即目标单峰IEDF所对应的脉冲串的脉冲占空比m。
在一些实施例中，在执行S110之前，可以基于各离子能量峰值确定脉冲偏压信号的负跳变幅值。
可以理解的是，脉冲偏压信号包括正跳变(即上升沿)和负跳变(即下降沿)，其中，自高电平跳变至低电平所对应的压降幅值，即负跳变幅值。
在实际应用中，只要保证脉冲偏压信号能够产生的最大离子能量大于目标IEDF中最大的离子能量峰值即可。基于此，将生成各离子能量峰值所需的离子电压中的最大值，作为参考电压值，将任一大于或等于参考电压值的幅值作为脉冲偏压信号的负跳变幅值，基于该负跳变幅值生成的脉冲偏压信号，均可满足实际工艺需求，在满足上述基本要求的前提下，本申请对于负跳变幅值的具体取值不作限定。
沿用图5所示的示例，四个单峰IEDF的离子能量峰值分别为240eV、210eV、180eV以及150eV，其中最大的离子能量峰值为240eV，对应的离子电压240V，因此，240V即前述参考电压。在此基础上，将任一大于或等于240V的幅值，比如300V或290V，作为负跳变幅值即可。在本申请中，脉冲偏压信号的负跳变幅值，即各个单峰IEDF对应的脉冲串中各个脉冲的负跳变幅值，也就是说，按照本申请提供的脉冲偏压信号生成方法生成的脉冲偏压信号，各个脉冲的负跳变幅值均为相同值，整个控制过程不需要调节脉冲偏压信号的负跳变幅值，也就不存在负跳变幅值慢慢过渡的过程，进而不会产生很多设定范围以外的离子能量，因此，可以控制离子能量按照目标IEDF分布，满足实际工艺需求。
S120：按照各脉冲占空比创建相应单峰IEDF对应的脉冲串，得到信号序列。
本申请述及的信号序列，包括目标IEDF中各单峰IEDF对应的脉冲串，且对于任一单峰IEDF而言，在信号序列中至少包括一个相应的脉冲。基于前述步骤可知，控制离子按照不同单峰IEDF分布所需的脉冲偏压信号的占空比互不相同，因此，在构建信号序列时，需要针对目标IEDF中的每一个单峰IEDF，按照前述步骤确定的脉冲占空比确定相应的脉冲串。
进一步的，信号序列中各单峰IEDF对应的脉冲串中所包含脉冲的个数占比，则与相应单峰IEDF在目标IEDF中的离子量占比一致。换言之，信号序列中各脉冲串所包含脉冲的个数占比，决定了目标IEDF中各单峰IEDF的离子量占比。
沿用图5所示的示例，各单峰IEDF的离子量占比依次为40％、30％、20％以及10％，相应的，在信号序列中，各单峰IEDF对应的脉冲串所包含脉冲的个数占比，同样为40％、30％、20％以及10％。
上述内容为构建信号序列的两项基本要求，至于构成信号序列的具体实现方式，将在后续内容中展开，此处暂不详述。
S130：按照负跳变幅值重复输出信号序列，以输出脉冲偏压信号。
在得到信号序列之后，按照负跳变幅值重复的输出所得信号序列内的各脉冲串，即在输出第一脉冲占空比的脉冲串之后，维持负跳变幅值不变，切换脉冲占空比，输出第二脉冲占空比的脉冲串，直至输出信号序列中的全部脉冲串，之后，再次按照前述内容输出信号序列，如此往复，即可得到控制离子按照目标IEDF分布的脉冲偏压信号。
结合图3所示，控制器10控制射频电源40运行，并通过阻抗匹配电路50对耦合线圈60施加射频功率，进而在工艺腔室70内部生成等离子体。进一步的，控制器10控制直流电源210按照负跳变幅值输出直流电压，同时，控制驱动信号生成电路230重复的按照信号序列内各脉冲串的脉冲占空比输出驱动信号，驱动开关阵列220按照各脉冲占空比将直流电压转为相应的脉冲，得到脉冲偏压信号，最终将所得脉冲偏压信号输出至设置于晶片承载装置710内部的偏压电极30，对离子到达晶片表面过程中的离子能量予以控制，从而控制离子按照目标IEDF分布。
发明人进一步研究发现，在向偏压电极输出脉冲偏压信号之后，由于偏压电极与晶片之间相当于电容，当处于脉冲偏压信号的高电平的时候，晶片表面同样感应到相同的高电平，晶片表面的高电平与工艺腔室内部的等离子体之间会形成加速电场，吸引电子向晶片表面移动，导致晶片表面电压降低。当处于脉冲偏压信号的低电平的时候，晶片表面电压会变为负电压，吸引离子向晶片表面移动。由于离子运动速度远小于电子运动速度，电子引起的晶片表面电压下降的幅度将远大于离子引起的晶片表面电压上升的幅度，在经过多个脉冲周期后，才会在晶片表面形成稳定的电压波形。
基于此，重复输出信号序列的关键在于，使得最终输出的脉冲偏压信号，能够控制离子在经过多个脉冲周期后达到晶片表面。如果离子在到达晶片表面之前经历多个脉冲周期，那么离子在此过程中将不再实时受到到晶片表面形成的鞘层电压波形的影响，而是受到平均鞘层电压的作用，在这种情况下，离子将在100％的脉冲周期内以近似恒定的鞘层电压加速到晶片表面，这一效果对于提高离子能量分布的控制精度是极为有效的，当然，这也是本申请通过调节脉冲占空比即可控制离子能量分布的关键前提。不同于相关技术中提供的脉冲偏压信号，在控制离子运动时，离子从等离子体中发射，穿越鞘层到达晶圆表面的时间一般为几百ns，这意味着离子一般经历1/4个脉冲周期即可到达晶片表面，由于时间较短，离子在此过程中可以实时受到晶片表面形成的鞘层电压波形影响，对于离子实时响应的周期性鞘层电压波形，轰击到晶片表面的离子的离子能量取决于离子进入鞘层的相位，也就是说，离子将在80％左右的脉冲周期内按照恒定的鞘层电压加速到晶片表面，脉冲偏压信号的负电压跳变幅值(即晶片表面的电压幅值)决定离子能量分布的具体效果，因此，相关技术改变脉冲偏压信号的频率和占空比并不会改变对应的离子能量分布。
综上所述，本实施例提供的脉冲偏压信号生成方法，按照信号序列重复输出对应相同负跳变幅值的各脉冲偏压信号，即仅需要调整所输出的脉冲串的占空比即可提供脉冲偏压信号，不需调节各脉冲串对应的负跳变幅值，相较于现有技术通过调整负跳变幅值控制离子能量分布，调节占空比所需时间更短，能够实现脉冲偏压信号的迅速切换，从而控制离子能量按照目标IEDF分布，满足实际工艺需求。
在上述实施例提供的脉冲偏压信号生成方法中，基于离子能量峰值和负跳变幅值确定脉冲串的占空比，且不同单峰IEDF对应的脉冲串的占空比互不相同，在输出脉冲偏压信号时，需要调整占空比，进而输出不同的脉冲偏压信号。可以理解的是，对于脉冲串中的任一脉冲而言，占空比等于脉冲宽度与脉冲周期的比值，基于此，调整占空比自然对应两种实现方式，其一是脉冲周期不变，调整脉冲宽度，其二是脉冲宽度不变，调整脉冲周期。
以包括两个单峰IEDF的目标IEDF为例，其中一个单峰IEDF对应的离子量占比为25％，另一个单峰IEDF对应的离子量占比为75％。
图6a至图6c示出脉冲周期不变，调整脉冲宽度的波形关系，其中，图6a为脉冲偏压信号的波形图，结合图6a可以看出，信号序列内包括四个脉冲周期相同的脉冲偏压信号，前三个脉冲偏压信号对应第一脉冲宽度，最后一个脉冲偏压信号对应第二脉冲宽度。图6b中实线为施加图6a所示脉冲偏压信号情况下，在晶片表面感应出的电压波形，虚线表示离子实际感受到的平均鞘层电压波形，相应的，图6c所示即离子能量分布的控制结果，即目标IEDF对应的曲线图。
相应的，图7a至图7c示出脉冲宽度不变，调整脉冲周期的波形关系，其中，图7a为脉冲偏压信号的波形图，结合图7a可以看出，信号序列内包括四个脉冲宽度相同的脉冲偏压信号，前三个脉冲偏压信号对应第一脉冲周期，最后一个脉冲偏压信号对应第二脉冲周期。图7b中实线为施加图7a所示脉冲偏压信号情况下，在晶片表面感应出的电压波形，虚线表示离子实际感受到的平均鞘层电压波形，相应的，图7c所示即离子能量分布的控制结果，即目标IEDF对应的曲线图。
可以理解的是，在脉冲占空比确定的情况下，还可以同时调节脉冲宽度和脉冲周期，这同样是可行的。
结合上述内容可以看出，本申请提供的脉冲偏压信号生成方法，不仅可以通过调节负跳变幅值调节离子能量，还可以通过调整脉冲偏压信号的脉冲宽度和脉冲周期来调节离子能量分布，增多了离子能量分布调节的可选参数，降低任意形状IEDF的实现难度。进一步的，结合图6a或图7a所示，本申请提供的脉冲偏压信号属于标准的脉冲信号，并未包含图1a所述整形后脉冲偏压信号的负电压斜坡，这有助于降低输出脉冲偏压信号的难度。
如前所述，通过脉冲偏压信号控制离子经过多个脉冲周期后达到晶片表面，是本申请通过调节脉冲偏压信号的脉冲占空比即可控制离子能量分布的关键因此，如何确定信号序列内脉冲偏压信号的个数，并最终确保脉冲偏压信号可以使得离子在经过多个脉冲周期后才到达晶片表面，成为进一步提高离子能量分布控制精度的关键。基于此，本申请提供一种确定信号序列的方法，参见图8所示，本方法包括以下步骤。
S1301：基于各单峰IEDF的离子量占比，分别确定各单峰IEDF对应的脉冲串包含的脉冲个数。
在一些实施例中，可以先获取工艺腔室内的目标参数。
在本申请中，工艺腔室内的目标参数主要包括离子浓度以及电子温度。在实际应用中，工艺腔室内的离子浓度以及电子温度可以基于朗缪尔探针获得，当然，也可以基于其他等离子体诊断设备获得，本申请对于前述目标参数的具体获取途径不做限定。
如前所述，各脉冲偏压信号在信号序列中的个数占比与相应单峰IEDF的离子量占比一致，通过目标IEDF已然获知各单峰IEDF对应的离子量占比，基于此，确定信号序列中包括的脉冲偏压信号的总个数，即可得到各单峰IEDF对应的脉冲偏压信号的个数。
因此，首先要基于前述目标参数以及负跳变幅值，确定信号序列中脉冲偏压信号的总个数。具体的，首先确定预设循环频率，该预设循环频率为重复输出信号序列的频率，预设循环频率的设置，主要考虑图3所示半导体工艺设备中偏置电源的性能参数以及相关的工艺要求，本申请对于预设循环频率的具体取值不作限定，作为一种优选的频率范围，预设循环频率可以在10Hz-10kHz范围内选取。
然后，基于离子浓度、电子温度以及负跳变幅值，确定目标频率，按照该目标频率输出的脉冲偏压信号即能够使离子经过多个脉冲周期后到达晶片表面，计算目标频率与预设循环频率的商，记得到信号序列中脉冲偏压信号的总个数。至于目标频率的具体确定过程，将在后续内容中以具体实例说明。
在得到信号序列中脉冲偏压信号的总个数后，分别计算各单峰IEDF的离子量占比与所得总个数的乘积，即得到相应单峰IEDF对应的脉冲串的脉冲个数。
S1302：分别按照各单峰IEDF对应的脉冲个数和脉冲占空比确定相应的脉冲串，得到信号序列。
经过前述步骤，已经得到各单峰IEDF对应的脉冲偏压信号的脉冲占空比，以及在信号序列中的脉冲个数，针对每一个单峰IEDF，按照该单峰IEDF对应的脉冲占空比生成相应脉冲个数的脉冲偏压信号，即可得到信号序列。其中，对于脉冲占空比的确定，可以参照前述内容，调节脉冲宽度以及脉冲周期中的至少一项来完成，此处不再复述。
在得到信号序列之后，即可按照前述内容输出脉冲偏压信号，控制离子按照目标IEDF分布，此处不再复述。
下面以控制离子能量按照图5所示的IEDF分布为例，对应用本申请提供的方法输出脉冲偏压信号的过程予以详细介绍。
步骤S1：获取目标IEDF。
结合图5所示，目标IEDF包括四个单峰IEDF，在图5中自左向右，四个单峰IEDF的离子能量峰值依次为150eV、180eV、210eV以及240eV，四个单峰IEDF对应的离子量占比则为40％、30％、20％以及10％。
步骤S2：基于各离子能量峰值确定脉冲偏压信号的负跳变幅值。
四个单峰IEDF的离子能量峰值分别为240eV、210eV、180eV以及150eV，其中最大的离子能量峰值为240eV，对应的离子电压240V，在此基础上，将任一大于或等于240V的幅值，比如300V，作为负跳变幅值即可。
步骤S3：针对每一个单峰IEDF，基于该单峰IEDF的离子能量峰值和负跳变幅值，确定相应脉冲偏压信号的脉冲占空比。
负跳变幅值为300V，按照公式(2)分别计算各单峰IEDF对应的脉冲偏压信号的脉冲占空比，则有离子能量峰值为240eV的单峰IEDF的脉冲偏压信号的脉冲占空比为0.2、离子能量峰值为210eV的单峰IEDF的脉冲偏压信号的脉冲占空比为0.3、离子能量峰值为180eV的单峰IEDF的脉冲偏压信号的脉冲占空比为0.4、离子能量峰值为150eV的单峰IEDF的脉冲偏压信号的脉冲占空比为0.5。
步骤S4：根据工艺腔室内离子浓度、电子温度以及负跳变幅值，确定工艺腔室内离子穿越鞘层的时间。
如前所述，工艺腔室内的离子浓度以及电子温度，可以基于朗缪尔探针或者其他等离子体诊断设备获得，此处不再详述。
按照下式计算离子穿越鞘层的时间：
其中，τi表示离子穿越鞘层的时间；
k表示玻尔兹曼常数；
Te表示电子温度；
n0表示离子浓度；
ε0表示真空介电常数；
M表示离子质量；
Vout表示负跳变幅值。
步骤S5：根据离子穿越鞘层的时间以及预设周期数，确定参考频率。
如前所述，本申请所提供方法的关键在于保证离子穿越鞘层时需要经过多个脉冲周期后达到晶片表面，本步骤述及的预设周期数，即指离子到达晶片表面所需的脉冲周期的个数。
基于上述内容，参考频率可以按照下式计算：
其中，fmin表示参考频率；
τi表示离子穿越鞘层的时间；
N表示预设周期数，作为一种优选的实施方式，为保证离子穿越鞘层时需要经过多个脉冲周期后达到晶片表面，预设周期数应该大于或等于5。
步骤S6：确定任一大于或等于参考频率的频率作为目标频率。
假设按照公式(4)，计算所得参考频率为10MHz，基于此，可以选择10MHz或其他大于10MHz的频率作为目标频率。
步骤S7：基于目标频率以及信号序列的预设循环频率，确定信号序列中各脉冲串包含脉冲的总个数。
如前所述，预设循环频率可以在10Hz-10kHz范围内选取，比如，预设循环频率为10kHz，那么目标频率(10MHz)与预设循环频率的比值1000，即信号序列中各脉冲串包含脉冲的总个数。
步骤S8：分别计算各单峰IEDF的离子量占比与总个数的乘积，得到相应单峰IEDF对应的脉冲个数。
如前所述，在图5所示的目标IEDF中，自左向右四个峰IEDF的离子量占比依次为40％、30％、20％以及10％，相应的，在信号序列中，四个单峰IEDF对应的脉冲偏压信号的个数占比，同样为40％、30％、20％以及10％。
分别计算各单峰IEDF的离子量占比与总个数的乘积，则有离子能量峰值为150eV的单峰IEDF的脉冲偏压信号的脉冲个数为400个、离子能量峰值为180eV的单峰IEDF的脉冲偏压信号的脉冲个数为300个、离子能量峰值为210eV的单峰IEDF的脉冲偏压信号的脉冲个数为200个、离子能量峰值为240eV的单峰IEDF的脉冲偏压信号的脉冲个数为100个。
步骤S9：分别按照各单峰IEDF对应的脉冲个数和脉冲占空比确定相应的脉冲串，得到信号序列。
按照前述步骤最终所得信号序列，可参见图9所示。
步骤S10：按照预设循环周期(即10kHz)重复输出信号序列，以输出脉冲偏压信号。
综上所述，本申请提供的脉冲偏压信号生成方法，重复输出具有不同脉冲占空比的脉冲偏压信号组成的信号序列，通过调整脉冲偏压信号的脉冲占空比(即脉冲宽度和/或脉冲周期)，实现脉冲偏压信号的快速调整，能够解决现有技术中脉冲偏压信号负跳变幅值调整耗时较长，无法精准控制离子能量分布的问题，实现任意形状IEDF的分布控制，显著提高离子能量分布的控制精度，满足工艺需求。
在一些实施例中，本实施例还提供了一种计算机可读存储介质，如软盘、光盘、硬盘、闪存、U盘、SD(Secure Digital Memory Card，安全数码卡)卡、MMC(Multimedia Card，多媒体卡)卡等，在该计算机可读存储介质中存储有实现上述各个步骤的一个或者多个指令，这一个或者多个指令被一个或者多个处理器执行时，使得所述处理器执行前文描述的脉冲偏压信号生成方法。相关具体实现请参考前述描述，此处不过多赘述。
除了上述方法和设备以外，本申请的实施例还可以是计算机程序产品，其包括计算机程序指令，计算机程序指令在被处理器运行时使得处理器执行本说明书上述内容中描述的根据本申请各种实施例的脉冲偏压信号生成方法中的步骤。
计算机程序产品可以以一种或多种程序设计语言的任意组合来编写用于执行本申请实施例操作的程序代码，程序设计语言包括面向对象的程序设计语言，诸如Java、C++等，还包括常规的过程式程序设计语言，诸如“C”语言或类似的程序设计语言。程序代码可以完全地在用户计算设备上执行、部分地在用户设备上执行、作为一个独立的软件包执行、部分在用户计算设备上部分在远程计算设备上执行、或者完全在远程计算设备或服务器上执行。
本领域技术人员能够理解，本公开所披露的内容可以出现多种变型和改进。例如，以上所描述的各种设备或组件可以通过硬件实现，也可以通过软件、固件、或者三者中的一些或全部的组合实现。
此外，虽然本公开对根据本公开的实施例的系统中的某些单元做出了各种引用，然而，任何数量的不同单元可以被使用并运行在客户端和/或服务器上。单元仅是说明性的，并且系统和方法的不同方面可以使用不同单元。
本公开中使用了流程图用来说明根据本公开的实施例的方法的步骤。应当理解的是，前面或后面的步骤不一定按照顺序来精确的进行。相反，可以按照倒序或同时处理各种步骤。同时，也可以将其他操作添加到这些过程中。
本领域普通技术人员可以理解上述方法中的全部或部分的步骤可通过计算机程序来指令相关硬件完成，程序可以存储于计算机可读存储介质中，如只读存储器等。可选地，上述实施例的全部或部分步骤也可以使用一个或多个集成电路来实现。相应地，上述实施例中的各模块/单元可以采用硬件的形式实现，也可以采用软件功能模块的形式实现。本公开并不限制于任何特定形式的硬件和软件的结合。
除非另有定义，这里使用的所有术语具有与本公开所属领域的普通技术人员共同理解的相同含义。还应当理解，诸如在通常字典里定义的那些术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
以上是对本公开的说明，而不应被认为是对其的限制。尽管描述了本公开的若干示例性实施例，但本领域技术人员将容易地理解，在不背离本公开的新颖教学和优点的前提下可以对示例性实施例进行许多修改。因此，所有这些修改都意图包含在权利要求书所限定的本公开范围内。应当理解，上面是对本公开的说明，而不应被认为是限于所公开的特定实施例，并且对所公开的实施例以及其他实施例的修改意图包含在所附权利要求书的范围内。本公开由权利要求书及其等效物限定。

Claims (10)

  1. 一种脉冲偏压信号生成方法，其特征在于，包括：
    获取目标离子能量分布函数(IEDF)，所述目标IEDF包括多个单峰IEDF以及各所述单峰IEDF对应的离子量占比和离子能量峰值；
    针对每一个所述单峰IEDF，基于该单峰IEDF的离子能量峰值和所述脉冲偏压信号的负跳变幅值，确定相应脉冲串所包含脉冲的脉冲占空比，所述脉冲偏压信号包括多个所述脉冲串，各个所述脉冲串与各个所述单峰IEDF相对应，所述脉冲串包括多个脉冲，各个脉冲的所述负跳变幅值为相同值；
    按照各所述脉冲占空比创建相应单峰IEDF对应的脉冲串，得到信号序列，其中，各所述脉冲串包含的脉冲个数在所述信号序列中的个数占比与相应单峰IEDF的离子量占比一致；
    按照所述负跳变幅值重复输出所述信号序列，以输出所述脉冲偏压信号。
  2. 根据权利要求1所述的方法，其特征在于，所述按照各所述脉冲占空比创建相应单峰IEDF对应的脉冲串，得到信号序列，包括以下步骤：
    基于各所述单峰IEDF的离子量占比，分别确定各所述单峰IEDF对应的脉冲串包含的脉冲个数；
    分别按照各所述单峰IEDF对应的脉冲个数和脉冲占空比确定相应的脉冲串，得到信号序列。
  3. 根据权利要求2所述的方法，其特征在于，所述基于各所述单峰IEDF的离子量占比，分别确定各所述单峰IEDF对应的脉冲串包含的脉冲个数，包括以下步骤：
    获取所述信号序列中各所述脉冲串所包含脉冲的总个数；
    分别计算各所述单峰IEDF的离子量占比与所述总个数的乘积，得到相应单峰IEDF对应的脉冲个数。
  4. 根据权利要求3所述的方法，其特征在于，所述获取所述信号序列中各所述脉冲串所包含脉冲的总个数，包括以下步骤：
    获取预设循环频率以及目标参数，所述预设循环频率为重复输出所述信号序列的频率，所述目标参数包括离子浓度以及电子温度；
    基于所述预设循环频率、所述目标参数以及所述负跳变幅值，确定所述信号序列中各所述脉冲串所包含脉冲的总个数。
  5. 根据权利要求4所述的方法，其特征在于，所述基于所述预设循环频率、所述目标参数以及所述负跳变幅值，确定所述信号序列中各所述脉冲串所包含脉冲的总个数，包括以下步骤：
    基于所述目标参数以及所述负跳变幅值，确定目标频率，其中，按照所述目标频率输出的脉冲偏压信号能够使离子经过多个脉冲周期后到达晶片表面；
    确定所述目标频率与所述预设循环频率的商为信号序列中各所述脉冲串包含脉冲的总个数。
  6. 根据权利要求5所述的方法，其特征在于，所述基于所述目标参数以及所述负跳变幅值，确定目标频率，包括以下步骤：
    获取预设周期数，所述预设周期数为离子到达晶片表面所需的脉冲周期的个数；
    根据所述目标参数以及所述负跳变幅值，确定工艺腔室内离子穿越鞘层的时间；
    根据所述时间以及所述预设周期数，确定参考频率；
    确定任一大于或等于所述参考频率的频率作为目标频率。
  7. 根据权利要求1至6任一项所述的方法，其特征在于，确定任一所述单峰IEDF对应的脉冲串的脉冲占空比的过程，包括：
    按照下式计算所述脉冲串的脉冲占空比：
    其中，m表示所述脉冲串的脉冲占空比；
    Ep表示单峰IEDF的离子能量峰值；
    e表示电子电荷量；
    Vout表示所述负跳变幅值。
  8. 根据权利要求1至6任一项所述的方法，其特征在于，在针对每一个所述单峰IEDF，基于该单峰IEDF的离子能量峰值和所述脉冲偏压信号的负跳变幅值，确定相应脉冲串的脉冲占空比之前，所述方法还包括以下步骤：基于各所述离子能量峰值确定脉冲偏压信号的负跳变幅值，包括以下步骤：
    将生成各所述离子能量峰值所需的离子电压中的最大值，作为参考电压值；
    确定任一大于或等于所述参考电压值的幅值作为脉冲偏压信号的负跳变幅值。
  9. 根据权利要求1至6任一项所述的方法，其特征在于，所述按照所述负跳变幅值重复输出所述信号序列，以输出脉冲偏压信号，包括以下步骤：
    控制直流电源按照所述负跳变幅值输出直流电压；
    以及，重复的按照所述信号序列内各脉冲串的脉冲占空比输出驱动信号，以使开关阵列按照各所述脉冲占空比将所述直流电压转为相应的脉冲偏压信号。
  10. 一种半导体工艺设备，其特征在于，包括：偏压电源、偏压电极以及控制器，其中，
    所述偏压电极设置于工艺腔室的晶片承载装置中；
    所述偏压电源包括直流电源以及开关阵列，其中，
    所述直流电源的输出端与所述开关阵列的输入端相连，所述开关阵列的输出端与所述偏压电极相连；
    所述控制器分别与所述直流电源以及所述开关阵列的控制端相连，所述控制器包括存储器和处理器，所述存储器用于存储指令，所述处理器用于根据所述存储器中存储的指令，执行如权利要求1至9任一项所述的脉冲偏压信号生成方法。
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