WO2026012015A1 - 基板处理装置及基板处理方法 - Google Patents

基板处理装置及基板处理方法

Info

Publication number
WO2026012015A1
WO2026012015A1 PCT/CN2025/098923 CN2025098923W WO2026012015A1 WO 2026012015 A1 WO2026012015 A1 WO 2026012015A1 CN 2025098923 W CN2025098923 W CN 2025098923W WO 2026012015 A1 WO2026012015 A1 WO 2026012015A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
liquid
substrate processing
gas
outlet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/098923
Other languages
English (en)
French (fr)
Inventor
王晖
王坚
吴均
杨宏超
杨小亚
刁建华
贾照伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ACM Research Shanghai Inc
Original Assignee
ACM Research Shanghai Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ACM Research Shanghai Inc filed Critical ACM Research Shanghai Inc
Publication of WO2026012015A1 publication Critical patent/WO2026012015A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches

Definitions

  • This invention belongs to the field of semiconductor technology and relates to a substrate processing apparatus and method for substrates such as semiconductor wafers or FPDs (flat panel displays).
  • the designer of this invention based on years of experience in this industry, actively researched and improved the technology, and thus the present invention provides a substrate processing apparatus and substrate processing method.
  • this application provides a substrate processing apparatus, comprising:
  • a support platform for supporting the substrate and rotating the substrate
  • the nozzle includes a liquid outlet and a gas outlet partially surrounding the liquid outlet.
  • the orthographic projection of the gas outlet on the support platform is located between the center of the support platform and the orthographic projection of the liquid outlet on the support platform.
  • the liquid outlet is used to spray a chemical liquid to form a liquid column to clean the edge of the substrate, and the gas outlet is used to spray gas to form an air curtain.
  • the nozzle is configured to move the liquid column and the air curtain along a perimeter of the substrate, with the air curtain partially surrounding the liquid column.
  • the nozzles are provided on both the front and back sides of the substrate, respectively, for cleaning the edges of the substrate on the front and back sides.
  • the gas outlet is arc-shaped, and the arc angle is greater than 30° and less than 180°.
  • the liquid outlet is located on the centerline of the gas outlet.
  • the annular width of the gas outlet is greater than or equal to the diameter of the liquid outlet.
  • the nozzle is further configured to cause the liquid outlet to begin spraying chemical liquid after the gas outlet has been spraying gas for a predetermined time.
  • the predetermined time is 1 second to 3 seconds.
  • the gas outlet ejects gas at a predetermined flow rate, wherein the predetermined flow rate is 3 LPM-10 LPM.
  • the gas is an inert gas.
  • the vertical height of the gas outlet is greater than or equal to the vertical height of the liquid outlet.
  • the gas outlet is parallel to the liquid outlet.
  • the horizontal distance between the gas outlet and the liquid outlet is less than 2 mm.
  • the angle between the gas outlet and the substrate is smaller than the angle between the liquid outlet and the substrate, and the intersection of the gas outlet and the liquid outlet is lower than the height of the nozzle.
  • the distance between the area of the air curtain landing on the substrate and the liquid contact point is less than 2 mm.
  • the distance between the nozzle and the substrate is 0.2mm-2mm.
  • the substrate is a non-circular substrate, and when the substrate rotates, the nozzle is configured to move along the edge of the substrate by telescopic movement, so that the liquid column and the air curtain move along the washing line.
  • the substrate is a circular substrate, and when the substrate rotates, the nozzle is configured to remain stationary so that the liquid column and the air curtain move along the washing line.
  • the gas outlet is further connected to a manifold, and the gas flows from the manifold to the gas outlet.
  • the present invention also provides a substrate processing method, applicable to a substrate processing apparatus.
  • the substrate processing apparatus includes a nozzle and a support stage that carries the substrate and rotates the substrate.
  • the nozzle includes a liquid outlet and a gas outlet partially surrounding the liquid outlet.
  • the orthographic projection of the gas outlet on the support stage is located at the center of the support stage and the orthographic projection of the liquid outlet on the support stage.
  • the method includes:
  • the substrate is kept rotating at a desired rotational speed
  • the gas outlet sprays gas onto the substrate to form an air curtain on the substrate surface, and the liquid outlet sprays chemical liquid to form a liquid column to wash the edge of the substrate.
  • the liquid column and the air curtain move along a circumference of the substrate, and the air curtain partially surrounds the liquid column.
  • the linear velocity generated by the substrate rotating at the desired rotational speed is less than or equal to 2.8 m/s.
  • the substrate is a square substrate with a side length of 500 mm, and the desired rotational speed is less than or equal to 109 rpm.
  • the desired rotational speed is greater than or equal to 18 rpm.
  • the substrate is a circular substrate with a diameter of 300 mm, and the desired rotational speed is less than or equal to 180 rpm.
  • the desired rotational speed is greater than or equal to 40 rpm.
  • the liquid outlet begins to ejaculate chemical liquid.
  • the predetermined time is 1s-3s.
  • the distance between the nozzle and the substrate is 0.2mm-2mm.
  • the gas outlet ejects gas at a predetermined flow rate, wherein the predetermined flow rate is 3 LPM-10 LPM.
  • the height of the nozzle from the substrate is adjusted so that the distance between the area of the air curtain landing on the substrate and the liquid contact point is less than 2 mm.
  • the height of the nozzle from the substrate is adjusted so that the area of the air curtain falling on the substrate is tangent to the shape of the liquid contact point.
  • the gas is an inert gas.
  • a portion of the edge washing line is always located between the area where the air curtain falls on the substrate and the liquid contact point.
  • the liquid outlet stops spraying chemical liquid, while the gas outlet continues to spray gas for a period of time.
  • the circumference of the air curtain is greater than or equal to the diameter of the liquid column.
  • the present invention provides a substrate processing apparatus and a substrate processing method for edge washing of substrates.
  • the chemical liquid sprayed from the nozzle can move along a circumferential washing line along the edge of the substrate, thereby making the edge washing width of the substrate uniform.
  • the nozzle provided by the present invention sprays gas to form a liquid column while simultaneously spraying the chemical liquid to form an air curtain that partially surrounds the liquid column, guiding the chemical liquid to be removed from the substrate. This overcomes the problem that the centrifugal force is insufficient to dislodge the chemical liquid at low rotational speeds, thus failing to complete the edge washing.
  • the air curtain can also block splashed chemical liquid, preventing splashed chemical liquid from causing defects in the central area of the substrate.
  • Figure 1 is a schematic diagram of an embodiment of the substrate processing apparatus of the present invention.
  • Figure 2 is a schematic diagram of another embodiment of the substrate processing apparatus of the present invention.
  • Figure 3 is a schematic diagram of the spray nozzle rotating and extending with the substrate in this invention, so that the sprayed chemical liquid is kept on the edge of the substrate along a washing line.
  • Figure 4 is a cross-sectional view of the nozzle in one embodiment of the present invention.
  • Figure 5 is a bottom view of the nozzle in one embodiment of the present invention.
  • Figure 6 is a schematic diagram showing the relationship between the liquid contact point L of the sprayed chemical liquid on the substrate surface and the position of the air curtain G on the substrate surface in one embodiment of the present invention.
  • Figure 7 is a schematic diagram showing the angle formed between the gas outlet and the liquid outlet in the cross-sectional view shown in Figure 4 in this invention.
  • spatial relation terms such as “below,” “under,” “lower,” “below,” “below,” “above,” “upper,” and “above” may be used herein to describe the relationship between an element or feature shown in the accompanying drawings and other elements or features. It will be understood that these spatial relation terms are intended to include directions other than those depicted in the drawings for devices in use or operation. Furthermore, when a layer is referred to as being “between” two layers, it can be the only layer between the two layers, or there may be one or more layers in between. The phrase “between” as used herein includes both endpoint values.
  • the structure described above the first feature may include embodiments in which the first and second features are formed in direct contact, or embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
  • the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the actual number, shape, and size of components in implementation. In actual implementation, the type, quantity, and proportion of each component can be arbitrarily changed, and the component layout may also be more complex.
  • the edge cleaning apparatus and edge cleaning method described below are used for processing semiconductor wafers or substrates in the field of FPD (flat panel display).
  • the substrate processing apparatus includes at least one edge-cleaning section 100 for cleaning the edge of a substrate W, a support section 200 for carrying the substrate W and rotating the substrate W, and a control section 300.
  • the substrate W is non-circular; in some embodiments, the substrate W is square or rectangular, or may be other non-circular shapes.
  • the control section 300 controls the operation of all functional components of the substrate processing apparatus (power units such as motors, electric cylinders, and pneumatic cylinders that drive the movement of structural components such as the edge-cleaning section 100 and the support section 200, a chemical liquid supply section for starting and stopping the chemical liquid supply, and a gas supply section for starting and stopping the gas supply).
  • the control section 300 may be one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DAPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, or combinations thereof.
  • ASICs application-specific integrated circuits
  • DSPs digital signal processors
  • DAPDs digital signal processing devices
  • PLDs programmable logic devices
  • FPGAs field-programmable gate arrays
  • processors controllers, microcontrollers, microprocessors, or combinations thereof.
  • the edge cleaning section 100 includes a nozzle 110 for spraying chemical liquid to clean the edges of the substrate W.
  • the edge cleaning section 100 also includes a swing arm 130 and a telescopic motion power unit 140 for driving the swing arm 130 to extend and retract.
  • the nozzle 110 is located at the end of the swing arm 130, and the telescopic motion power unit 140 drives the swing arm 130 to extend and retract, so that the swing arm 130 moves the nozzle 110.
  • the telescopic motion power unit 140 includes a hydraulic cylinder, a pneumatic cylinder, or a motor. That is, the telescopic motion power unit 140 can be configured as a hydraulic cylinder, a pneumatic cylinder, or a motor connected to the swing arm 130.
  • two edge cleaning sections 100 located at opposite positions on the front side of the substrate W can be provided for cleaning the edges of the front side of the substrate W, thereby accelerating the cleaning efficiency of the edges of the substrate W. It is understood that at least one edge cleaning section 100 can also be provided on the back side of the substrate W for cleaning the edges of the back side of the substrate W. For example, as shown in FIG1, two edge-washing sections 100 are provided at opposite positions on the back side of the substrate W to simultaneously clean the back side of the substrate W, thereby accelerating the cleaning efficiency of the back side of the substrate W.
  • the control unit 300 controls the extension and retraction of the nozzle 110 located at the end of the swing arm 130 by controlling the extension and retraction of the swing arm 130.
  • Each edge-washing section 100 is provided with a nozzle 110 located on the front or back side of the substrate for spraying chemical liquid to clean the edges of the substrate W.
  • Each nozzle 110 is driven by the corresponding edge-washing section 100, and each edge-washing section 100 independently drives the movement of one nozzle 110.
  • the edge cleaning section 100 includes two nozzles 110 respectively disposed on the front and back sides of the substrate W, for cleaning the edges of the front and back sides of the substrate.
  • the edge cleaning section 100 also includes a swing arm 130, a bracket 120 for connecting the two nozzles 110 to the swing arm 130, and a telescopic motion power unit 140 for driving the swing arm 130.
  • the two nozzles 110 disposed in the edge cleaning section 100 can be driven to move through the same edge cleaning section 100.
  • the support platform 210 supports the substrate and keeps it rotating.
  • the support section 200 includes a support platform 210 for supporting the substrate W, a rotation shaft 220 for rotating the support platform 210, and a rotational power unit 230 for driving the rotation shaft 220 to rotate.
  • the rotational power unit 230 drives the rotation shaft 220 to rotate, and the rotation shaft 220 drives the support platform 210 and the substrate W to rotate.
  • the chemical solution is used to remove photoresist from the edges of the substrate.
  • the chemical solution includes one or more of the following: photoresist remover, N-methylpyrrolidone (NMP), hydrochloric acid, nitric acid, hydrofluoric acid, citric acid, oxalic acid, ammonia, hydrogen peroxide, and tetramethylammonium hydroxide.
  • the chemical solution is used to clean the edges of the electroplated substrate.
  • the chemical solution may include at least one of sulfuric acid ( H2SO4 ) and hydrogen peroxide ( H2O2 ).
  • a gas supply unit (not shown) supplies an inert gas to the nozzle 110 to form an air curtain on the substrate surface. This inert gas will not chemically react with the chemical solution and thus affect the edge cleaning treatment of the substrate.
  • the inert gas is nitrogen.
  • the control unit 300 controls the nozzle 110 to move along the edge of the substrate and spray chemical liquid onto the rotating substrate so that the edge cleaning width is always a preset width.
  • the edge cleaning width is the distance from the point where the chemical liquid sprayed by the nozzle 110 touches the substrate surface to the outer edge of the substrate.
  • the preset width for cleaning the substrate edge e is set to d.
  • the substrate edge e has an outer edge e2 and an inner edge e1 that are oppositely arranged, where the inner edge e1 is the edge cleaning line.
  • the control unit 300 controls the nozzle 110 to extend and retract so that the point where the chemical liquid sprayed by the nozzle 110 touches the substrate surface moves along a ring edge cleaning line e1 of the substrate edge e.
  • the nozzle cannot extend and retract synchronously to allow the contact point of the sprayed chemical liquid to move along the edge-washing line of the substrate. Therefore, it is necessary to slow down the substrate's rotation speed.
  • the substrate maintains rotation at a desired speed, and the nozzle extends and retracts synchronously to allow the contact point of the sprayed chemical liquid to move along the edge-washing line.
  • the desired speed is a low speed, meaning that when the substrate rotates at the desired speed, the linear velocity is too low, and the resulting centrifugal force is insufficient to throw the chemical liquid out.
  • the linear velocity is less than or equal to 2.5 m/s.
  • the nozzle 110 sprays gas to form an air curtain that partially surrounds the chemical liquid column, which not only prevents the splashed chemical liquid droplets from damaging the substrate surface but also guides the chemical liquid towards the substrate edge.
  • the nozzle 110 is a dual-channel system, comprising a liquid channel 111 and a gas channel 112.
  • the liquid channel 111 includes a liquid channel body 1111, a liquid inlet 1112 at one end of the liquid channel body 1111, and a liquid outlet 1113 at the other end of the liquid channel body 1111.
  • a chemical supply unit (not shown) is connected to the liquid inlet 1112 to supply chemical liquid into the liquid channel 111.
  • the gas channel 112 includes a gas channel body 1121, a gas inlet 1122 at one end of the gas channel body 1121, and a gas outlet 1123 at the other end of the gas channel body 1121.
  • a gas supply unit (not shown) is connected to the gas inlet 1122 to supply gas into the gas channel 112. Furthermore, referring to Figures 4 and 5, since the opening area of the gas outlet 1123 is larger than the cross-sectional area of the gas channel body 1121, if the gas directly enters from the gas channel body 1121 and exits from the gas outlet 1123, it cannot form an air curtain of a certain length, and there may be a situation where it cannot partially surround the liquid column. Therefore, the gas channel 112 also includes a confluence channel 1124 located between the gas channel body 1121 and the gas outlet 1123. After the gas from the gas channel body 1121 gathers and fills the confluence channel 1124, it is ejected from the gas outlet 1123.
  • the gas being ejected from the gas outlet 1123 after filling the confluence channel 1124 makes the gas ejected from the gas outlet 1123 more uniform, and the formed air curtain is more stable.
  • the liquid contact point L of the chemical liquid ejected from the liquid outlet 1113 on the substrate surface moves along the washing line as the nozzle 110 extends and retracts, and the gas ejected from the gas outlet 1123 forms an air curtain G on the substrate surface.
  • Gas outlet 1123 partially surrounds liquid outlet 1113, so that the air curtain G formed by the gas ejected from gas outlet 1123 partially surrounds liquid point L, blocking splashed chemical droplets outside the wash line and preventing splashed chemical droplets from damaging the substrate surface inside the wash line.
  • gas outlet 1123 is arc-shaped with an arc angle greater than or equal to 30 degrees and less than 180 degrees, such as 90 degrees, 120 degrees, or 135 degrees. If the arc angle is greater than 180 degrees, the air curtain may push the splashed chemical liquid to the inside of the substrate; therefore, the arc angle is less than 180 degrees. To form a uniform surrounding effect on the liquid point, liquid outlet 1113 is located on the center line BB' of arc-shaped gas outlet 1123. In other embodiments, gas outlet 1123 can be other semi-enclosed shapes, such as V-shaped or U-shaped.
  • the air curtain G is spaced a desired distance S from the liquid point L.
  • the desired distance S is less than 2 mm. Since there is a certain wall thickness between the air curtain G and the liquid contact point L, the minimum desired distance S between the air curtain G and the liquid contact point L is the wall thickness.
  • the area of the air curtain G landing on the substrate surface is tangent to the shape of the liquid contact point L, that is, the desired distance S is 0.
  • the gas outlet 1123 and the liquid outlet 1113 are arranged in parallel, and the interval between the gas outlet 1123 and the liquid outlet 1113 is the desired distance S, which is less than 2 mm.
  • the angle at which the gas is ejected from the gas outlet 1123 is less than the angle at which the liquid is ejected from the liquid outlet 1113, and the intersection of the gas outlet 1123 and the liquid outlet 1113 is lower than the height of the nozzle 110.
  • the angle ⁇ between the liquid outlet and the gas outlet is configured based on the relative position of the area where the air curtain G falls on the substrate and the liquid contact point L on the substrate surface, as well as the preset height of the nozzle 110.
  • the height of the nozzle 110 is adjusted during the process based on the relative position of the air curtain G and the liquid contact point L on the substrate surface, as well as the angle ⁇ between the liquid outlet and the gas outlet, so that the distance between the area where the air curtain G falls on the substrate and the liquid contact point is a desired distance S, which is less than 2 mm.
  • the ring width of the air curtain is preferably greater than or equal to the diameter of the liquid column.
  • the nozzle 110 is connected to the chemical liquid supply unit so that the chemical liquid in the chemical liquid supply unit is supplied to the nozzle 110, and the nozzle 110 is connected to the gas supply unit so that the gas in the gas supply unit is supplied to the nozzle 110.
  • the present invention also provides a substrate processing method, comprising the following steps:
  • the gas outlet of the nozzle sprays gas onto the substrate to form an air curtain on the substrate surface, and the liquid outlet of the nozzle sprays chemical liquid to form a liquid column to wash the substrate edge.
  • the liquid column and the air curtain move along a circumference of the substrate edge washing line, and the air curtain partially surrounds the liquid column in the horizontal direction.
  • step (2) the orthographic projection of the gas outlet 1123 on the support platform 210 is located between the center of the support platform and the orthographic projection of the liquid outlet 1113 on the support platform 210.
  • the liquid outlet 1113 begins to spray chemical liquid onto the substrate.
  • the predetermined time is 1s-3s.
  • the nozzle 110 first sprays gas to form an air curtain, and then sprays chemical liquid to wash the edge of the substrate, avoiding damage to the substrate surface from splashed chemical liquid before the air curtain is formed.
  • the nozzle 110 performs a telescopic movement so that the contact point of the chemical liquid on the substrate surface moves along the edge washing line around the substrate edge.
  • the air curtain partially surrounds the liquid column to effectively block the chemical liquid and prevent the chemical liquid from damaging the substrate. At the same time, it enables the chemical liquid to flow towards the edge of the substrate when the centrifugal force generated by the low-speed rotation of the substrate is insufficient to throw out the chemical liquid. When the linear velocity generated by the substrate rotation reaches 2.8 m/s, the resulting centrifugal force is sufficient to eject the chemical liquid towards the substrate edge, completing the edge washing process. When the substrate rotates at a low speed, the reduced centrifugal force, compensated by an air curtain, guides the chemical liquid to the substrate edge.
  • a rotational speed of less than or equal to 109 rpm is desired. If the substrate rotational speed is too low, the generated centrifugal force is too small, and the air curtain cannot guide the chemical liquid to the substrate edge. Therefore, for a square substrate with a side length of 500 mm, a rotational speed of greater than or equal to 18 rpm is also desired.
  • the substrate can also be a circular substrate. The reduced substrate speed utilizes an air curtain to compensate for the reduced centrifugal force and guide the chemical liquid to the substrate edge. For example, for a circular substrate with a diameter of 300 mm, a rotational speed of less than or equal to 180 rpm is desired.
  • the gas outlet maintains an air curtain formed by ejecting gas at a predetermined flow rate of 3 LPM-10 LPM.
  • a portion of the edge cleaning line on the substrate is always located between the area where the air curtain falls on the substrate and the liquid contact point, so as to ensure that the substrate edge corresponding to the edge cleaning line is cleaned.
  • the area of action of the chemical liquid on the substrate is always kept in the edge cleaning area from the edge cleaning line to the edge of the substrate.
  • the liquid outlet stops spraying chemical liquid, while the gas outlet continues spraying gas for a period of time. This prevents any remaining chemical liquid from flowing to the inner edge of the substrate and damaging it. More details of this method embodiment can be found in the preceding description of the substrate processing apparatus, and will not be elaborated upon here.
  • the substrate processing apparatus and method of this invention are used for edge cleaning of non-circular substrates.
  • the substrate rotates at a desired speed so that the contact points of the chemical liquid sprayed by the nozzle during synchronous extension and retraction remain along the edge cleaning line of the substrate, resulting in a uniform edge cleaning width.
  • the nozzle sprays gas to form an air curtain inside the contact points to block chemical droplets and prevent them from splashing onto the inner side of the edge cleaning line and damaging the substrate surface. This also allows for the use of the air curtain to compensate and guide the chemical liquid towards the wafer edge when the centrifugal force generated by the low-speed rotation of the substrate is insufficient to eject the chemical liquid.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

本发明提供一种基板处理装置及基板处理方法。基板处理装置包括：承载台，用于承载所述基板并带着所述基板旋转；喷头，包括液体出口和部分包围所述液体出口的气体出口，所述气体出口在所述承载台上的正投影位于承载台中心与所述液体出口在所述承载台上的正投影之间，所述液体出口用于喷出化学液形成液柱以清洗基板边缘，所述气体出口用于喷出气体形成气帘；在所述基板旋转时，所述喷头被配置为使所述液柱与所述气帘沿着所述基板的一圈洗边线移动，所述气帘部分包围所述液柱，本发明所提供的气帘弥补了低速旋转下离心力不足以甩出化学液无法完成洗边的问题；同时，气帘还可以阻挡飞溅的化学液，避免飞溅的化学液对基板的中心区域造成缺陷。

Description

基板处理装置及基板处理方法 技术领域
本发明属于半导体技术领域，涉及一种用于半导体晶片或者FPD(平板显示器)等基板的基板处理装置及基板处理方法。
背景技术
一般情况下，在半导体设备的制造过程中，半导体晶片(以下称作基板)光刻胶涂布都是采用旋涂敷工艺形成的，所以在形成基板表面涂布光刻胶的过程中，旋转基板的离心力会使基板上的光刻胶在旋转涂敷时流动到基板边缘及背面，并形成隆起。
在基板电镀工艺中，电镀液通过旋镀在基板表面形成金属薄膜，但是电镀液会在离心力作用下逐渐向基板的边缘及背面移动并形成隆起。
为了克服上述问题，需要进行基板的边缘去除(edge bead removal，EBR)工艺，从而能够尽可能清洁基板边缘。基板边缘清洗工艺，是使用喷头在基板边缘喷出化学液，用以去除在基板边缘与背面所产生的缺陷。圆形基板边缘清洗时，基板保持高速旋转，喷头保持静止并喷出化学液，使得喷头喷出的化学液在基板表面的着液点沿着基板边缘一圈的洗边线移动以清洗基板边缘与背面。喷头向圆形基板喷出的化学液在基板高速旋转所产生的离心力作用下从基板的洗边线向外侧甩出完成洗边工艺。非圆形基板边缘清洗时，喷头需要随着基板的旋转同步伸缩以保持喷头喷出的化学液在基板表面的着液点沿着基板边缘一圈的洗边线移动。然而基板保持高速旋转时，由于驱动机构的限制，喷头无法同步高速伸缩。同时，即使解决了喷头同步高速伸缩的问题，喷头喷出的化学液在喷头高速伸缩作用下到达基板表面的着液点位置会发生偏移，造成洗边宽度不均一。由此，提供一种基板保持低速旋转，可控制洗边宽度，使得非圆形基板的洗边宽度均一，提高产品良率的方法已成为本领域技术人员亟待解决的技术问题之一。
故针对现有技术存在的问题，本案设计人凭借从事此行业多年的经验，积极研究改良，于是有了本发明一种基板处理装置及基板处理方法。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种基板处理装置和基板处理方法，用于解决现有技术中基板的洗边宽度不均一的问题。
为实现上述目的及其他相关目的，本申请提供一种基板处理装置，包括：
承载台，用于承载所述基板并带着所述基板旋转；
喷头，包括液体出口和部分包围所述液体出口的气体出口，所述气体出口在所述承载台上的正投影位于承载台中心与所述液体出口在所述承载台上的正投影之间，所述液体出口用于喷出化学液形成液柱以清洗基板边缘，所述气体出口用于喷出气体形成气帘；
在所述基板旋转时，所述喷头被配置为使所述液柱与所述气帘沿着所述基板的一圈洗边线移动，所述气帘部分包围所述液柱。
可选地，所述基板正面与背面均设置有所述喷头，分别用于清洗所述基板正面与背面的基板边缘。
可选地，所述气体出口为弧形，所述弧形角度为大30°且小于180°。
可选地，所述液体出口位于所述气体出口的中线上。
可选地，所述气体出口的环宽大于等于所述液体出口的直径。
可选地，所述喷头还配置为使所述气体出口喷出气体预定时间后，使所述液体出口开始喷出化学液。
可选地，所述预定时间为1s至3s。
可选地，所述气体出口以预定流量喷出气体，所述预定流量为3LPM-10LPM。
可选地，所述气体为惰性气体。
可选地，所述气体出口的垂直高度大于等于所述液体出口的垂直高度。
可选地，所述气体出口与所述液体出口平行。
可选地，所述气体出口与所述液体出口之间的水平间隔小于2mm。
可选地，所述气体出口与所述基板的夹角小于所述液体出口与所述基板的夹角，且所述气体出口与所述液体出口的交点低于所述喷头的高度。
可选地，所述气帘落在所述基板上的范围与所述着液点之间间隔的距离小于2mm。
可选地，所述喷头距离所述基板高度为0.2mm-2mm。
可选地，所述基板为非圆形基板，所述基板旋转时，所述喷头被配置为通过伸缩运动沿着所述基板边缘移动，以使所述液柱与所述气帘沿着所述洗边线移动。
可选地，所述基板为圆形基板，所述基板旋转时，所述喷头被配置为静止不动，以使所述液柱与所述气帘沿着所述洗边线移动。
可选地，所述气体出口还连接有汇流槽，所述气体从所述汇流槽中流向所述气体出口。为实现上述目的及其他相关目的，本发明还提供一种基板处理方法，适用于基板处理装置，所述基板处理装置包括喷头和承载所述基板并带着所述基板旋转的承载台，所述喷头包括液体出口和部分包围所述液体出口的气体出口，所述气体出口在所述承载台上的正投影位于承载台中心与所述液体出口在所述承载台上的正投影，所述方法包括：
保持所述基板以期望转速旋转；
所述气体出口向所述基板喷出气体而在所述基板表面形成气帘，所述液体出口喷出化学液形成液柱对所述基板洗边处理，所述液柱与所述气帘沿着所述基板的一圈洗边线移动，所述气帘部分包围所述液柱。
可选地，所述基板在所述期望转速下旋转产生的线速度小于等于2.8m/s。
可选地，所述基板为边长500mm的方形基板，所述期望转速小于等于109rpm。
可选地，所述期望转速大于等于18rpm。
可选地，所述基板为直径300mm的圆形基板，所述期望转速小于等于180rpm。
可选地，所述期望转速大于等于40rpm。
可选地，所述气体出口喷出气体预定时间后，所述液体出口开始喷出化学液。
可选地，所述预定时间为1s-3s。
可选地，所述喷头距离所述基板高度为0.2mm-2mm。
可选地，所述气体出口以预定流量喷出气体，所述预定流量为3LPM-10LPM。
可选地，在所述气体出口喷出气体前，调整所述喷头距离所述基板的高度，使所述气帘落在所述基板上的范围与所述着液点之间间隔的距离小于2mm。
可选地，在所述气体出口喷出气体前，调整所述喷头距离所述基板的高度，使所述气帘落在基板上的范围与所述着液点的形状相切。
可选地，所述气体为惰性气体。
可选地，在对基板洗边处理过程中，所述一圈洗边线始终有部分位于所述气帘落在基板上的范围与所述着液点之间。
可选地，在所述基板洗边处理完成后，所述液体出口停止喷出化学液，所述气体出口继续喷出一段时间的气体。
可选地，所述气帘的环宽大于等于所述液柱的直径。
如上所述，本发明提供了基板处理装置与基板处理方法对基板洗边处理，在基板降低转速，能够实现喷头喷出的化学液沿着基板边缘的一圈洗边线移动以使得基板洗边宽度均一。本发明所提供的喷头在喷出化学液形成液柱的同时，还喷出气体形成部分包围液柱的气帘，引导化学液从基板上移除，弥补了低速旋转下离心力不足以甩出化学液无法完成洗边的问题；同时，气帘还可以阻挡飞溅的化学液，避免飞溅的化学液对基板的中心区域造成缺陷。
附图概述
本发明的特征、性能由以下的实施例及其附图进一步描述。
图1为本发明中基板处理装置一实施例的结构示意图。
图2为本发明中基板处理装置另一实施例的结构示意图。
图3为本发明中喷头随基板旋转进行伸缩运动使喷出的化学液保持在基板边缘一圈洗边线上的示意图。
图4为本发明一实施例中喷头的剖视图。
图5为本发明一实施例中喷头的仰视图。
图6为本发明中一实施例中喷头喷出化学液在基板表面的着液点L与在基板表面的气帘G的位置关系示意图。
图7为本发明中在图4所示剖视图中气体出口与所述液体出口形成夹角的示意图。
本发明的较佳实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
如在详述本发明实施例时，为便于说明，表示器件结构的剖面图会不依一般比例作局部放大，而且所述示意图只是示例，其在此不应限制本发明保护的范围。此外，在实际制作中应包含长度、宽度及深度的三维空间尺寸。
为了方便描述，此处可能使用诸如“之下”、“下方”、“下部”、“低于”、“下面”、“上方”、“上部”、“上”等的空间关系词语来描述附图中所示的一个元件或特征与其他元件或特征的关系。将理解到，这些空间关系词语意图包含使用中或操作中的器件的、除了附图中描绘的方向之外的其他方向。此外，当一层被称为在两层“之间”时，它可以是所述两层之间仅有的层，或者也可以存在一个或多个介于其间的层。本文使用的“介于……之间”表示包括两端点值。
在本申请的上下文中，所描述的第一特征在第二特征“之上”的结构可以包括第一和第二特征形成为直接接触的实施例，也可以包括另外的特征形成在第一和第二特征之间的实施例，这样第一和第二特征可能不是直接接触。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，其组件布局型态也可能更为复杂。下文边缘清洗装置及边缘清洗方法用于对半导体晶片或者FPD(平板显示器)领域基板的处理。
参考图1，本发明所提供的基板处理装置包括用于清洗基板W边缘的至少一个洗边部100、承载基板W并使基板W旋转的承载部200以及控制部300。基板W为非圆形，在一些实施例中，基板W为正方形或者长方形，也可以是非圆形的其他形状。控制部300对基板处理装置的全部功能零部件(驱动洗边部100、承载部200等结构件运动的马达、电缸、气缸等动力部、化学液供应启停的化学液供应部、气体供应启停的气体供应部)的动作进行控制。控制部300可以是一个或多个专用集成电路(ASIC)、数字信号处理器(DSP)、数字信号处理器件(DAPD)、可编程逻辑器件(PLD)、现场可编程门阵列(FPGA)、处理器、控制器、微控制器、微处理器或者其组合。
如图1所示，在一些实施例中，洗边部100包括喷头110，用于喷出化学液以清洗基板W的边缘。洗边部100还包括摆臂130与用于驱动摆臂130伸缩的伸缩运动动力部140。喷头110位于摆臂130的末端，伸缩运动动力部140驱动摆臂130伸缩，以使摆臂130带着喷头110运动。示例性的，伸缩运动动力部140包括液压缸、气缸或者电机。也就是说，伸缩运动动力部140可以设置为与摆臂130连接的液压缸、气缸或者电机。参考图1中所示实施例，基板W正面可设置位于基板W相对位置的两个洗边部100，用于对基板W正面边缘进行清洗，加快基板W边缘的清洗效率。可以理解的是，基板W背面也可以设置至少一个洗边部100，用于对基板W背面的边缘进行清洗。示例性的，如图1所示，在基板W背面相对位置设置两个洗边部100同时清洁基板W背面，加快基板W背面的清洗效率。在此，控制部300通过对摆臂130的伸缩控制实现对位于摆臂130末端喷头110的伸缩控制。洗边部100对应设置一个位于基板正面或者背面的喷头110，用于喷出化学液清洗基板W的边缘。各喷头110由对应的洗边部100驱动，每个洗边部100单独驱动一个喷头110运动。
在另一些实施例中，参照图2，洗边部100包括分别配置于基板W的正面与背面的两个喷头110，分别用于清洗基板正面与背面的边缘。洗边部100还包括摆臂130、用于连接两个喷头110至摆臂130的支架120以及驱动摆臂130的伸缩运动动力部140。在本实例中，洗边部100配置的两个喷头110可通过同一个洗边部100驱动运动。
在洗边部100对基板洗边时，承载台210承载基板并保持基板旋转。参考图1中所示实施例，承载部200包括用于承载基板W的承载台210、带动承载台210旋转的旋转轴220和驱动旋转轴220旋转的旋转动力部230。旋转动力部230驱动旋转轴220旋转，旋转轴220带动承载台210与基板W旋转。
在一些实施例中，化学液用于去除基板边缘的光刻胶。化学液包括去胶液、N-甲基吡咯烷酮(N-Methyl pyrrolidone，简称NMP)、盐酸、硝酸、氢氟酸、柠檬酸、草酸、氨水、双氧水、四甲基氢氧化铵中的一种或多种。在另一些实施例中，化学液用于清洗电镀后基板的边缘。化学液可以包括硫酸(H2SO4)和过氧化氢(H2O2)的至少一种。气体供应部(图未示)向喷头110供应惰性气体以在基板表面形成气帘，该惰性气体不会与化学液发生化学反应而影响化学液对基板的洗边处理。示例性的，惰性气体为氮气。
控制部300控制喷头110沿着基板边缘移动并向旋转的基板喷出化学液以使洗边宽度始终为预设宽度。洗边宽度为喷头110喷出化学液在基板表面的着液点到基板外边缘的距离。例如图3对基板边缘e清洗的预设宽度设定为d，基板边缘e具有相对设置的外边缘e2与内边缘e1，其中内边缘e1为洗边线。在基板W旋转时，控制部300控制喷头110伸缩运动以使喷头110喷出化学液在基板表面的着液点沿着基板边缘e的一圈洗边线e1移动。
对于方形基板，由于驱动机构的限制，基板保持高速旋转时，喷头无法同步伸缩以使喷头喷出化学液的着液点沿着基板边缘的一圈洗边线移动，因此需要放慢基板旋转的速度。基板以期望转速保持旋转，喷头同步伸缩，以使喷头喷出化学液的着液点沿着洗边线移动。本发明中的期望转速为低转速，即基板以期望转速旋转时，线速度过低，产生的离心力不足以将化学液甩出去的转速。在本实施例中，线速度小于等于2.5m/s。由于基板放慢了旋转速度，基板旋转产生的离心力无法保证将基板表面飞溅的化学液液滴向基板外侧甩出，无法使化学液向基板边缘流动完成洗边工艺，同时，飞溅的化学液会损坏基板表面。因此喷头110喷出气体以形成部分包围化学液液柱的气帘，不仅能够防止飞溅的化学液液滴损坏基板表面，还能引导化学液向基板边缘移动。
如图4所示，喷头110为双通道，包括液体通道111与气体通道112。如图4中所示实施例，液体通道111包括液体通道主体1111、位于液体通道主体1111一端的液体入口1112、以及位于液体通道主体1111另一端的液体出口1113。化学液供应部(图未示)与液体入口1112连接以向液体通道111通入化学液。气体通道112包括气体通道主体1121、位于气体通道主体1121一端的气体入口1122、以及位于气体通道主体1121另一端的气体出口1123。气体供应部(图未示)与气体入口1122连接以向气体通道112通入气体。此外，参照图4并结合图5，由于气体出口1123的开口面积大于气体通道主体1121的截面积，气体直接从气体通道主体1121进入气体出口1123排出则无法形成具有一定长度的气帘，可能存在无法部分包围液柱的情况。因此，气体通道112还包括位于气体通道主体1121与气体出口1123之间的汇流槽1124。气体从气体通道主体1121汇集并充满汇流槽1124后，从气体出口1123喷出。可以理解的是，气体充满汇流槽1124后再从气体出口1123中喷出，可使得气体出口1123喷出气体更均匀，形成的气帘更稳定。参照图5并结合图6，从液体出口1113喷出的化学液在基板表面的着液点L随喷头110的伸缩沿着洗边线移动，从气体出口1123喷出的气体在基板表面形成气帘G。气体出口1123部分包围液体出口1113，以使气体出口1123喷出气体形成的气帘G部分包围着液点L，将飞溅的化学液液滴阻挡在洗边线外侧，防止飞溅的化学液液滴损坏洗边线内侧的基板表面。在本实施例中，气体出口1123为弧形，弧形角度大于等于30度且小于180度，如90度、120度、135度。弧形角度大于180度则气帘可能将反溅的化学液推向至基板内侧，因此弧形角度小于180度。为了对着液点形成均匀的包围效果，液体出口1113位于弧形气体出口1123的中线BB’上。在其他实施方式中，气体出口1123可以是其他半包围形状，如V形、U形等。为了防止气体出口1123喷出的气体改变化学液液柱的方向，如图6所示，气帘G与着液点L间隔期望距离S。在本实施例中，期望距离S小于2mm，由于气帘G与着液点L之间存在一定的壁厚，因此气帘G与着液点L间隔期望距离S最小为壁厚。优选的，为了更好地阻挡飞溅的化学液液滴，气帘G落在基板表面的范围与着液点L的形状相切，即期望距离S为0。在一种实施方式中，气体出口1123与液体出口1113之间平行设置，则气体出口1123与液体出口1113之间的间隔为期望距离S，期望距离小于2mm。在另一种实施方式中，参照图7并结合图4，气体出口1123喷出气体的角度小于液体出口1113喷出液体的角度，且气体出口1123与液体出口1113的交点低于喷头110的高度。喷头110设置在不同高度时，基板表面着液点L与气帘G落在基板上的范围的相对位置也会发生相应变化。因此依据气帘G落在基板上的范围与着液点L在基板表面之间的相对位置以及喷头110的预设高度来配置液体出口与气体出口之间的夹角θ，或依据气帘G与着液点L在基板表面之间的相对位置以及液体出口与气体出口之间的夹角θ，在工艺中调整喷头110高度，以使气帘G落在基板上的范围与着液点之间的间隔为期望距离S，期望距离小于2mm。为了保证气帘对飞溅化学液的隔绝与对化学液的引导，气帘的环宽优选为大于等于液柱的直径。可以理解的，喷头110与化学液供应部连通，以使化学液供应部中的化学液供应至喷头110中，并且喷头110与气体供应部连通，以使气体供应部中的气体供应至喷头110中。
如图4所示，在实际工艺过程中，喷头110距离基板高度W为0.2mm-2mm。气体出口1123垂直高度大于等于液体出口1113以保证洗边线内侧形成的气帘在竖直方向上完全包裹住液体出口1113喷出的液柱。气体出口以预定流量喷出气体以在基板表面形成气帘。在本实施例中，预定流量为3LPM-10LPM(Liter Per Minute，升/分钟)。
归纳而言，从另一角度看，本发明还提供了一种基板处理方法，包括以下步骤：
(1)保持基板以期望转速旋转；
(2)喷头的气体出口向基板喷出气体在基板表面形成气帘，喷头的液体出口喷出化学液形成液柱对基板洗边处理，液柱与气帘沿着基板的一圈洗边线移动，气帘在水平方向上部分包围液柱。
在步骤(2)中，气体出口1123在承载台210上的正投影位于承载台中心与所述液体出口1113在承载台210上的正投影之间。气体出口1123向基板喷出气体预定时间后，液体出口1113开始向基板喷出化学液。在本实施例中，预定时间为1s-3s。喷头110先喷出气体形成气帘后，再喷出化学液对基板洗边处理，避免还未形成气帘时飞溅的化学液损坏基板表面。对于非圆形基板，喷头110做伸缩运动，以使化学液在基板表面的着液点沿着基板边缘一圈的洗边线移动。需要指出的是，气帘部分包围液柱以有效阻隔化学液，防止化学液损坏基板，同时实现了在基板低速旋转产生的离心力不足以甩出化学液的情况下，利用气帘引导化学液向基板边缘流动。当基板旋转产生的线速度达到2.8m/s时，产生的离心力才可以将化学液向基板边缘处甩出完成基板的洗边处理。当基板以低转速旋转时，利用气帘对基板补偿降低的离心力能够将化学液引导至基板边缘。在一个实施例中基板边长为500mm的方形基板，期望转速小于等于109rpm。如果基板转速过低，产生的离心力过小，气帘也无法将化学液引导至基板边缘，因此，对于基板边长为500mm的方形基板，期望转速还需要大于等于18rpm。在另一个实施例中，基板也可以是圆形基板，基板降低速度利用气帘补偿降低的离心力将化学液引导至基板边缘。例如基板为直径300mm的圆形基板，期望转速小于等于180rpm。如果基板转速过低，产生的离心力过小，气帘也无法将化学液引导至基板边缘，因此，对于基板为直径300mm的圆形基板，期望转速还需要大于等于40rpm。为了保证气帘对化学液的有效阻隔，气体出口保持以预定流量喷出气体形成的气帘，预定流量为3LPM-10LPM。
在对基板洗边处理过程中，保持基板上的一圈洗边线始终有部分位于气帘落在基板上的范围与着液点之间，以保证对该洗边线对应基板边缘清洗，通过调整气体流量和/或化学液的流量，使化学液在基板上的作用区域始终保持在洗边线至基板边缘的洗边区域。
此外，在基板洗边处理完成后，液体出口先停止喷出化学液，气体出口继续喷出一段时间的气体，可以避免未排出基板的化学液流到基板边缘内侧损坏基板。本方法实施例的更多细节可参考前文对基板处理装置的描述，在此不再展开。
本发明的基板处理装置与基板处理方法对非圆形基板洗边处理，基板保持期望的速度旋转，以使喷头在同步伸缩时喷出的化学液在基板表面的着液点保持在基板边缘一圈的洗边线上，使得基板洗边宽度均一；喷头在喷出化学液的同时，喷出气体在着液点内侧形成气帘以阻挡化学液的液滴，防止液滴飞溅至洗边线内侧损坏基板表面。同时实现了在基板低速旋转产生的离心力不足以甩出化学液的情况下，利用气帘补偿引导化学液向晶圆边缘流动。本发明主要解决了非圆形基板洗边处理时，基板高速旋转时，喷头无法同步伸缩依靠离心力对基板边缘进行洗边处理的问题。本发明所提供的基板处理装置与基板处理方法同样适用于圆形基板边缘清洗需要低速旋转的工艺中。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (34)

  1. 一种基板处理装置，其特征在于，包括：
    承载台，用于承载所述基板并带着所述基板旋转；
    喷头，包括液体出口和部分包围所述液体出口的气体出口，所述气体出口在所述承载台上的正投影位于承载台中心与所述液体出口在所述承载台上的正投影之间，所述液体出口用于喷出化学液形成液柱以清洗基板边缘，所述气体出口用于喷出气体形成气帘；
    在所述基板旋转时，所述喷头被配置为使所述液柱与所述气帘沿着所述基板的一圈洗边线移动，所述气帘部分包围所述液柱。
  2. 根据权利要求1所述的基板处理装置，其特征在于，所述基板正面与背面均设置有所述喷头，分别用于清洗所述基板正面与背面的基板边缘。
  3. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口为弧形，所述弧形角度为大30°且小于180°。
  4. 根据权利要求3所述的基板处理装置，其特征在于，所述液体出口位于所述气体出口的中线上。
  5. 根据权利要求3所述的基板处理装置，其特征在于，所述气体出口的环宽大于等于所述液体出口的直径。
  6. 根据权利要求1所述的基板处理装置，其特征在于，所述喷头还配置为使所述气体出口喷出气体预定时间后，使所述液体出口开始喷出化学液。
  7. 根据权利要求6所述的基板处理装置，其特征在于，所述预定时间为1s至3s。
  8. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口以预定流量喷出气体，所述预定流量为3LPM-10LPM。
  9. 根据权利要求1所述的基板处理装置，其特征在于，所述气体为惰性气体。
  10. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口的垂直高度大于等于所述液体出口的垂直高度。
  11. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口与所述液体出口平行。
  12. 根据权利要求11所述的基板处理装置，其特征在于，所述气体出口与所述液体出口之间的水平间隔小于2mm。
  13. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口与所述基板的夹角小于所述液体出口与所述基板的夹角，且所述气体出口与所述液体出口的交点低于所述喷头的高度。
  14. 根据权利要求13所述的基板处理装置，其特征在于，所述气帘落在所述基板上的范围与所述化学液在所述基板表面的着液点之间间隔的距离小于2mm。
  15. 根据权利要求1所述的基板处理装置，其特征在于，所述喷头距离所述基板高度为0.2mm-2mm。
  16. 根据权利要求1所述的基板处理装置，其特征在于，所述基板为非圆形基板，所述基板旋转时，所述喷头被配置为通过伸缩运动沿着所述基板边缘移动，以使所述液柱与所述气帘沿着所述洗边线移动。
  17. 根据权利要求1所述的基板处理装置，其特征在于，所述基板为圆形基板，所述基板旋转时，所述喷头被配置为静止不动，以使所述液柱与所述气帘沿着所述洗边线移动。
  18. 根据权利要求1所述的基板处理装置，其特征在于，所述气体出口还连接有汇流槽，所述气体从所述汇流槽中流向所述气体出口。
  19. 一种基板处理方法，适用于基板处理装置，所述基板处理装置包括喷头和承载所述基板并带着所述基板旋转的承载台，所述喷头包括液体出口和部分包围所述液体出口的气体出口，所述气体出口在所述承载台上的正投影位于承载台中心与所述液体出口在所述承载台上的正投影，其特征在于，所述方法包括：
    保持所述基板以期望转速旋转；
    所述气体出口向所述基板喷出气体而在所述基板表面形成气帘，所述液体出口喷出化学液形成液柱对所述基板洗边处理，所述液柱与所述气帘沿着所述基板的一圈洗边线移动，所述气帘部分包围所述液柱。
  20. 根据权利要求19所述的基板处理方法，其特征在于，所述基板在所述期望转速下旋转产生的线速度小于等于2.8m/s。
  21. 根据权利要求20所述的基板处理方法，其特征在于，所述基板为边长500mm的方形基板，所述期望转速小于等于109rpm。
  22. 根据权利要求21所述的基板处理方法，其特征在于，所述期望转速大于等于18rpm。
  23. 根据权利要求20所述的基板处理方法，其特征在于，所述基板为直径300mm的圆形基板，所述期望转速小于等于180rpm。
  24. 根据权利要求23所述的基板处理方法，其特征在于，所述期望转速大于等于40rpm。
  25. 根据权利要求19所述的基板处理方法，其特征在于，所述气体出口喷出气体预定时间后，所述液体出口开始喷出化学液。
  26. 根据权利要求25所述的基板处理方法，其特征在于，所述预定时间为1s-3s。
  27. 根据权利要求19所述的基板处理方法，其特征在于，所述喷头距离所述基板高度为0.2mm-2mm。
  28. 根据权利要求19所述的基板处理方法，其特征在于，所述气体出口以预定流量喷出气体，所述预定流量为3LPM-10LPM。
  29. 根据权利要求20所述的基板处理方法，其特征在于，在所述气体出口喷出气体前，调整所述喷头距离所述基板的高度，使所述气帘落在所述基板上的范围与所述化学液在所述基板表面的着液点之间间隔的距离小于2mm。
  30. 根据权利要求19所述的基板处理方法，其特征在于，在所述气体出口喷出气体前，调整所述喷头距离所述基板的高度，使所述气帘落在基板上的范围与所述化学液在所述基板表面的着液点的形状相切。
  31. 根据权利要求19所述的基板处理方法，其特征在于，所述气体为惰性气体。
  32. 根据权利要求19所述的基板处理方法，其特征在于，在对基板洗边处理过程中，所述一圈洗边线始终有部分位于所述气帘落在基板上的范围与所述化学液在所述基板表面的着液点之间。
  33. 根据权利要求19所述的基板处理方法，其特征在于，在所述基板洗边处理完成后，所述液体出口停止喷出化学液，所述气体出口继续喷出一段时间的气体。
  34. 根据权利要求19所述的基板处理方法，其特征在于，所述气帘的环宽大于等于所述液柱的直径。
PCT/CN2025/098923 2024-07-08 2025-06-04 基板处理装置及基板处理方法 Pending WO2026012015A1 (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098040A1 (en) * 2001-11-27 2003-05-29 Chang-Hyeon Nam Cleaning method and cleaning apparatus for performing the same
JP2004265912A (ja) * 2003-02-03 2004-09-24 Personal Creation Ltd 基板の処理装置
CN103913958A (zh) * 2014-03-18 2014-07-09 京东方科技集团股份有限公司 基板边缘光刻胶的去除装置
CN107615457A (zh) * 2015-05-26 2018-01-19 株式会社斯库林集团 基板处理装置
CN117950270A (zh) * 2023-12-28 2024-04-30 上海传芯半导体有限公司 去除边缘光刻胶的装置及方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030098040A1 (en) * 2001-11-27 2003-05-29 Chang-Hyeon Nam Cleaning method and cleaning apparatus for performing the same
JP2004265912A (ja) * 2003-02-03 2004-09-24 Personal Creation Ltd 基板の処理装置
CN103913958A (zh) * 2014-03-18 2014-07-09 京东方科技集团股份有限公司 基板边缘光刻胶的去除装置
CN107615457A (zh) * 2015-05-26 2018-01-19 株式会社斯库林集团 基板处理装置
CN117950270A (zh) * 2023-12-28 2024-04-30 上海传芯半导体有限公司 去除边缘光刻胶的装置及方法

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