WO2026007677A1 - 一种薄膜制备方法和半导体工艺设备 - Google Patents

一种薄膜制备方法和半导体工艺设备

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Publication number
WO2026007677A1
WO2026007677A1 PCT/CN2025/101123 CN2025101123W WO2026007677A1 WO 2026007677 A1 WO2026007677 A1 WO 2026007677A1 CN 2025101123 W CN2025101123 W CN 2025101123W WO 2026007677 A1 WO2026007677 A1 WO 2026007677A1
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WO
WIPO (PCT)
Prior art keywords
gas
process chamber
component
radio frequency
assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2025/101123
Other languages
English (en)
French (fr)
Inventor
蔡毅仁
夏维羽
申震
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of WO2026007677A1 publication Critical patent/WO2026007677A1/zh
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • This application relates to the field of semiconductor technology, specifically to a thin film preparation method and semiconductor process equipment.
  • TOPCon Tel Oxide Passivated Contact
  • tubular PECVD Pullasma Enhanced Chemical Vapor Deposition
  • the quality of the tunnel oxide layer fabricated by current tubular PECVD equipment is relatively poor, resulting in low conversion efficiency of the solar cells.
  • This application discloses a thin film preparation method and semiconductor process equipment to improve the quality of thin films such as tunnel oxide layers prepared by tubular PECVD equipment.
  • this application discloses a thin film deposition method applied to semiconductor process equipment.
  • the semiconductor process equipment includes a process chamber, and at least two support components are disposed within the process chamber.
  • the support components are used to support substrates.
  • the method includes: placing multiple substrates into the at least two support components respectively, controlling the process chamber to alternately perform a ventilation process and a suffocation process, and controlling the at least two support components to asynchronously perform glow discharge at least during the suffocation process within the process chamber; wherein the ventilation process is used to introduce process gas required for thin film deposition into the process chamber; the flow velocity of the gas in the process chamber during the suffocation process is lower than the flow velocity of the gas in the process chamber during the ventilation process.
  • the semiconductor process equipment further includes an inlet assembly and an exhaust assembly.
  • the inlet assembly is used to introduce process gas into the process chamber
  • the exhaust assembly is used to exhaust gas from the process chamber to control the gas pressure inside the process chamber.
  • the control of alternating ventilation and suffocation processes inside the process chamber includes: controlling the exhaust assembly to exhaust gas from the process chamber and controlling the inlet assembly to introduce process gas into the process chamber; after the gas pressure inside the process chamber reaches a first preset gas pressure, controlling the inlet assembly to stop introducing process gas into the process chamber and controlling the exhaust assembly to stop exhausting gas from the process chamber.
  • the first preset air pressure is greater than or equal to 100 Pa and less than or equal to 10000 Pa.
  • the semiconductor process equipment further includes a power supply component for providing radio frequency (RF) signals to the at least two carrier components respectively.
  • the RF signals are used to excite the process gas in the process chamber to generate plasma through glow discharge.
  • Controlling the asynchronous glow discharge of the at least two carrier components includes controlling the power supply component to provide RF signals with non-overlapping RF activation periods to the at least two carrier components.
  • the RF activation period is the period during which the RF signals excite the process gas in the process chamber to generate plasma through glow discharge.
  • the delay duration is greater than or equal to the duration of the radio frequency turn-on period and less than or equal to the difference between the duration of the radio frequency turn-on period and the duration of the radio frequency turn-off period.
  • the radio frequency turn-off period is a period within a signal cycle excluding the radio frequency turn-on period.
  • the ratio of the duration of the radio frequency turn-on period to the radio frequency turn-off period of the radio frequency signal of any of the carrier components is greater than or equal to 1/6 and less than or equal to 1/200.
  • this application discloses a semiconductor process apparatus, including a process chamber, an inlet assembly, an extraction assembly, a power supply assembly, and a control assembly; the process chamber is provided with at least two support components for supporting a substrate; the inlet assembly is used to introduce process gas into the process chamber; the extraction assembly is used to extract gas from the process chamber to control the gas pressure in the process chamber; the power supply assembly is used to provide radio frequency signals to the at least two support components respectively; the control assembly includes at least one memory and at least one processor, the memory storing a computer program, and the processor executing the computer program to implement the thin film preparation method as described in any of the preceding claims.
  • the air intake assembly includes a gas buffer component and a gas path control component;
  • the gas buffer component is disposed between the air supply component and the process chamber, and is used to buffer the process gas supplied by the air supply component, and to transfer the process gas to the process chamber when the gas path between the gas buffer component and the process chamber is open; the speed at which the gas buffer component transfers the process gas to the process chamber is greater than the speed at which the air supply component transfers the process gas to the gas buffer component;
  • the gas path control component is disposed between the gas buffer component and the air supply component, and is used to control the opening or closing of the gas path between the gas buffer component and the air supply component.
  • the air intake assembly further includes a pressure measuring component; the pressure measuring component is disposed on the gas buffer component and is used to measure the gas pressure inside the gas buffer component.
  • the air intake assembly further includes a first one-way control component, a second one-way control component, and a manual control component; the first one-way control component is disposed between the air supply component and the air path control component, the second one-way control component is disposed between the gas buffer component and the process chamber, and the manual control component is disposed between the first one-way control component and the air path control component.
  • the thin film preparation method and semiconductor process equipment disclosed in this application involve placing multiple substrates into at least two support components within a process chamber, and then controlling the process chamber to alternately perform a ventilation process and a venting process. Since the ventilation process introduces the process gas required for thin film deposition into the process chamber, and the gas flow rate within the process chamber is lower during the venting process than during the ventilation process, the gas flow rate within the process chamber can be reduced while ensuring the presence of the required process gas for thin film deposition. This avoids the problem of uneven plasma distribution within the process chamber due to high gas flow rate, thereby improving the uniformity and quality of the prepared tunneling oxide layer and other thin films.
  • At least two carrier components are controlled to asynchronously glow discharge during the suffocation process in the process chamber, it not only avoids the problem of uneven plasma distribution in the process chamber caused by the plasma and byproducts generated by the glow discharge of one carrier component being used by the other carrier component to generate plasma, but also avoids the problem of affecting the stability of the preparation of thin films such as tunneling oxide layers due to discharge interference between carrier components. This further improves the uniformity and stability of the prepared thin films such as tunneling oxide layers, and further improves the quality of the prepared thin films such as tunneling oxide layers.
  • Figure 1 is a schematic diagram of a tubular PECVD equipment.
  • Figure 2 is a schematic diagram of a power supply component providing radio frequency signals to two carrier components.
  • FIG. 3 is a flowchart of a thin film preparation method disclosed in an embodiment of this application.
  • Figure 4 is a schematic diagram of the connection relationship between a power supply component and two supporting components disclosed in an embodiment of this application.
  • Figure 5 is a schematic diagram of an asynchronous radio frequency signal provided by a power supply component to two carrier components according to an embodiment of this application.
  • Figure 6 is a schematic diagram of the structure of an air intake component and an air extraction component disclosed in an embodiment of this application.
  • FIG. 7 is a schematic diagram of another intake component disclosed in an embodiment of this application.
  • FIG. 1 shows a schematic diagram of a tubular PECVD equipment, including a process chamber 1, an inlet assembly 2, an extraction assembly 3, and a power supply assembly 4.
  • the process chamber 1 contains two support components 10, which support substrates such as wafers. These support components 10 include, but are not limited to, graphite boats.
  • the process chamber 1 includes, but is not limited to, furnace tubes.
  • the inlet assembly 2 introduces process gas into the process chamber 1.
  • the extraction assembly 3 extracts gas from the process chamber 1 to control the gas pressure within it.
  • the power supply assembly 4 provides radio frequency (RF) signals to the two support components 10. These RF signals excite the process gas within the process chamber 1 to undergo glow discharge, generating plasma that deposits a tunneling oxide layer or other thin film on the surface of the wafer or other substrate.
  • RF radio frequency
  • the inventors discovered that because one support component 10 is located near the air inlet of the process chamber 1 and the other support component 10 is located near the air outlet of the process chamber 1, during the process of the air inlet assembly 2 continuously introducing process gas into the process chamber 1 through the air inlet and the air extraction assembly 3 continuously extracting air from the process chamber 1 through the air extraction port, the gas in the process chamber 1 will flow from the air inlet to the air outlet. This causes the plasma generated by the support component 10 near the air inlet to flow with the gas to the air outlet, resulting in uneven distribution of plasma in the process chamber 1. Consequently, the uniformity of the tunneling oxide layer and other thin films prepared in the process chamber 1 is poor, which in turn leads to poor quality of the tunneling oxide layer and other thin films.
  • the power supply component 4 simultaneously provides synchronous radio frequency signals to the two carrier components 10 as shown in FIG2, the two carrier components 10 will simultaneously undergo glow discharge.
  • the plasma and byproducts generated by the carrier component 10 near the air inlet will flow with the gas to the carrier component 10 near the air outlet. This will cause the plasma and byproducts to continue to be used by the carrier component 10 near the air outlet to generate plasma through glow discharge, further aggravating the uneven distribution of plasma in the process chamber 1 and further aggravating the non-uniformity of thin films such as the tunnel oxide layer.
  • the discharge interference between the carrier components 10 will affect the stability of the preparation of thin films such as the tunnel oxide layer, resulting in poor quality of the thin films such as the tunnel oxide layer.
  • this application discloses a thin film preparation scheme, which controls the alternating circulation of a gas flow rate-high ventilation process and a gas flow rate-low stagnant process in the process chamber. While ensuring that the process chamber contains the process gas required for thin film deposition, the scheme reduces the gas flow rate in the process chamber, thereby improving the uniformity of the prepared tunneling oxide layer and other thin films. Furthermore, by controlling at least two carrier components to asynchronously glow discharge during the stagnant process in the process chamber, the uniformity and stability of the prepared tunneling oxide layer and other thin films are further improved, thereby enhancing the quality of the prepared tunneling oxide layer and other thin films.
  • an embodiment of this application discloses a thin film preparation method for preparing thin films such as tunneling oxide layers.
  • This thin film preparation method is applied to semiconductor process equipment such as tubular PECVD equipment.
  • the semiconductor process equipment includes a process chamber 1, and at least two support components 10 are disposed in the process chamber 1.
  • the support components 10 are used to support substrates such as wafers.
  • FIG3 is a flowchart of a thin film preparation method disclosed in an embodiment of this application. The method includes:
  • the ventilation process is used to introduce the process gas required for thin film deposition into process chamber 1, it ensures that process chamber 1 contains the necessary process gas for thin film deposition. Since the gas flow velocity in process chamber 1 is lower during the venting process than during the ventilation process, the gas flow rate in process chamber 1 is reduced. This avoids the problem of uneven plasma distribution in process chamber 1 caused by high gas flow rate, thereby improving the uniformity of the prepared tunneling oxide layer and other thin films, and ultimately improving the quality of the prepared tunneling oxide layer and other thin films.
  • At least two carrier components 10 are controlled to asynchronously glow discharge during the suffocation process in at least the process chamber 1, it can not only avoid the problem of uneven plasma distribution in the process chamber 1 caused by the plasma and byproducts generated by the glow discharge of one carrier component 10 being used by the other carrier component 10 to generate plasma, but also avoid the problem of the stability of the preparation of thin films such as tunneling oxide layers being affected by the discharge interference between the carrier components 10. In this way, the uniformity and stability of the prepared thin films such as tunneling oxide layers can be further improved, thereby improving the quality of the prepared thin films such as tunneling oxide layers.
  • the utilization rate of process gases can be improved, gas loss can be reduced, and production costs can be lowered.
  • At least two carrier components 10 can be controlled to asynchronously glow discharge only when the suffocation process is performed in the process chamber 1, and at least two carrier components 10 can be controlled not to glow discharge when the ventilation process is performed in the process chamber 1. This not only prevents the plasma and byproducts generated by the glow discharge of one carrier component 10 from flowing to the other carrier component 10 with the gas, but also allows the plasma and byproducts generated by one carrier component 10 to be annihilated before the glow discharge of the other carrier component 10.
  • this application is not limited to this.
  • at least two carrier components 10 can be controlled to asynchronously glow discharge. In this way, even if the plasma and by-products generated by one carrier component 10 flow to another carrier component 10 with the gas, the plasma and by-products generated by one carrier component 10 will be annihilated before the glow discharge of the other carrier component 10. Therefore, it is also possible to avoid the plasma and by-products generated by one carrier component 10 being used by the other carrier component 10 to generate plasma through glow discharge. This can also improve the uniformity of plasma distribution in the process chamber 1, improve the uniformity of the prepared tunneling oxide layer and other thin films, and improve the quality of the prepared tunneling oxide layer and other thin films.
  • controlling at least two carrier components 10 to asynchronously glow discharge can only improve the uniformity of films prepared by different carrier components 10.
  • controlling the alternating ventilation and suffocation processes in the process chamber 1 can not only improve the uniformity of films prepared by different carrier components 10, but also improve the uniformity of films prepared by the same carrier component 10.
  • the semiconductor process equipment further includes an inlet assembly 2 and an exhaust assembly 3.
  • the inlet assembly 2 is used to introduce process gas into the process chamber 1
  • the exhaust assembly 3 is used to exhaust gas from the process chamber 1 to control the gas pressure inside the process chamber 1.
  • controlling the alternating ventilation process and suffocation process in the process chamber 1 includes: controlling the exhaust assembly 3 to exhaust gas from the process chamber 1 and controlling the inlet assembly 2 to introduce process gas into the process chamber 1; after the gas pressure inside the process chamber 1 reaches a first preset gas pressure, controlling the inlet assembly 2 to stop introducing process gas into the process chamber 1 and controlling the exhaust assembly 3 to stop exhausting gas from the process chamber 1, so that the gas flow velocity inside the process chamber 1 is equal to 0 when the suffocation process is performed.
  • the gas flow velocity in process chamber 1 during the sealing process can be greater than 0 and less than a preset flow velocity, which can be less than or equal to the gas flow velocity in process chamber 1 during the ventilation process. It is understood that as long as the gas flow velocity in process chamber 1 during the sealing process is less than the gas flow velocity in process chamber 1 during the ventilation process, the uniformity of plasma distribution in process chamber 1 can be improved to a certain extent, thereby improving the uniformity of the prepared tunneling oxide layer and other thin films, and improving the quality of the prepared tunneling oxide layer and other thin films.
  • the deposition of the thin film consumes the gas in process chamber 1, causing a decrease in pressure within chamber 1. Therefore, the pressure within process chamber 1 can be monitored in real time to determine the end time of the suffocation process. Alternatively, the end time of the suffocation process can also be determined by measuring the deposition time within process chamber 1.
  • the number of cycles for the ventilation and suffocation processes can be determined based on the thickness of the prepared thin film, such as the tunneling oxide layer. If the number of cycles for the ventilation and suffocation processes is greater than or equal to 2, after each cycle of the ventilation and suffocation processes is completed, it can be determined whether the gas pressure in process chamber 1 is less than the second preset gas pressure or whether the deposition time in process chamber 1 is greater than or equal to the preset time. If so, the ventilation process in the next cycle is performed, that is, the extraction component 3 is controlled to extract gas from process chamber 1 again, and the inlet component 2 is controlled to introduce process gas into process chamber 1 again.
  • the inlet component 2 is controlled to stop introducing process gas into process chamber 1
  • the extraction component 3 is controlled to stop extracting gas from process chamber 1. If not, continue the suffocation process in this cycle, that is, keep the process gas stopped from being introduced into the process chamber and control the extraction component to stop evacuating the process chamber until the gas pressure in process chamber 1 is less than the second preset gas pressure or the deposition time in process chamber 1 is determined to be greater than or equal to the preset time.
  • the air intake component 2 can be controlled to introduce process gas into the process chamber 1 to reduce impurity gas in the process chamber 1.
  • the first preset gas pressure is greater than or equal to 100 Pa and less than or equal to 10000 Pa; the second preset gas pressure is less than or equal to 100 Pa; and the third preset gas pressure is less than 10 Pa.
  • this application is not limited to this.
  • the magnitudes of the first preset gas pressure, the second preset gas pressure, and the third preset gas pressure can be determined according to the thin film deposition requirements, which will not be elaborated here.
  • the semiconductor process equipment further includes a power supply component 4.
  • the power supply component 4 is used to provide radio frequency signals to at least two carrier components 10 respectively.
  • the radio frequency signals are used to excite the process gas in the process chamber 1 to generate plasma through glow discharge.
  • FIG4 is a schematic diagram of the connection relationship between the power supply component 4 and the two carrier components 10 disclosed in an embodiment of this application.
  • the power supply component 4 provides radio frequency signals to the two carrier components 10 respectively through two output channels.
  • controlling the asynchronous glow discharge of at least two carrier components 10 includes: controlling the radio frequency signals from the power supply component 4 to the at least two carrier components 10 to be asynchronous radio frequency signals.
  • the asynchronous radio frequency signals refer to the radio frequency activation periods of any two radio frequency signals not overlapping.
  • the radio frequency activation period is the period during which the radio frequency signals excite the process gas in the process chamber 1 to generate plasma through glow discharge.
  • Figure 5 is a schematic diagram of an asynchronous radio frequency signal provided by a power supply component to two carrier components in an embodiment of this application.
  • the radio frequency turn-on period Ton of the radio frequency signal of one carrier component does not overlap with the radio frequency turn-on period Ton of the radio frequency signal of the other carrier component, so that the two carrier components 10 can discharge asynchronously or not discharge at the same time.
  • the radio frequency (RF) signal is a periodic signal, and each signal cycle includes an RF on period (Ton) and an RF off period (Toff). That is, the RF off period (Toff) is the time period within a signal cycle excluding the RF on period (Ton).
  • the RF signal excites the process gas in process chamber 1 to undergo glow discharge and generate plasma; during the RF off period (Toff), the RF signal does not excite the process gas in process chamber 1.
  • the radio frequency (RF) signals of any two of the at least two carrier components 10 have a delay duration, so that any two of the at least two carrier components 10 do not simultaneously glow discharge.
  • the delay duration refers to the time difference between the rising edge of the first RF turn-on period Ton of one RF signal and the rising edge of the first RF turn-on period Ton of the other RF signal, as shown in FIG. 5.
  • the delay duration can be determined based on the duration of the RF turn-on period Ton and the RF turn-off period Toff of the RF signal.
  • the delay duration is less than or equal to the duration of the RF turn-on period Ton and greater than or equal to the difference between the duration of the RF turn-off period Toff and the duration of the RF turn-on period Ton.
  • the delay duration can be relatively increased.
  • the duration of the RF on-time (Ton) can be relatively increased, or the ratio of the RF on-time (Ton) to the RF off-time (Toff) can be increased.
  • the ratio of the duration of the radio frequency turn-on period Ton to the duration of the radio frequency turn-off period Toff of any carrier component 10 is greater than or equal to 1/6 and less than or equal to 1/200, so as to ensure that the delay duration between any two carrier component 10 radio frequency signals is less than or equal to the duration of the radio frequency turn-on period Ton and greater than or equal to the difference between the duration of the radio frequency turn-off period Toff and the duration of the radio frequency turn-on period Ton.
  • the ratio of the RF on-time (Ton) to the RF off-time (Toff) can be set differently depending on the deposition process of the thin film.
  • a tunneling oxide layer because tunneling oxide layers have high requirements for film uniformity, a smaller ratio of the RF on-time (Ton) to the RF off-time (Toff) is generally used, such as 1/100 or 2/50.
  • a polycrystalline silicon layer because polycrystalline silicon layers are thicker, their requirements for film uniformity are lower, so a larger ratio of the RF on-time (Ton) to the RF off-time (Toff) is generally used, such as 1/10.
  • the delay duration is greater than or equal to 2ms and less than or equal to 198ms; where the delay duration is a fixed value between 2ms and 198ms.
  • the delay duration is greater than or equal to 4ms and less than or equal to 36ms; where the delay duration is a fixed value between 4ms and 36ms.
  • the power supply component 4 in this embodiment includes an RF power supply and a matching unit.
  • the RF power supply provides RF signals to the carrier component 10 in the process chamber 1 through the matching unit, which is used to achieve impedance matching between the RF power supply and the carrier component 10.
  • the RF power supply is also connected to the lower-level computer of the semiconductor process equipment. After the user sets the delay time of the RF signal through the upper-level computer, the upper-level computer sends the corresponding control signal to the RF power supply through the lower-level computer, so that the RF power supply sends the RF signal with the corresponding delay time to the above-mentioned at least two carrier components 10.
  • the thin film deposition process is described using a tunneling oxide layer as an example.
  • multiple substrates such as silicon wafers, with their surfaces cleaned, are placed into two carrier components 10, such as graphite boats.
  • the two carrier components 10 are then transported to a vacuum process chamber 1 via a transmission device, and the two carrier components 10 are connected to their respective electrodes.
  • the carrier component 10 e.g., a graphite boat
  • the substrate e.g., a silicon wafer
  • the evacuation assembly 3 is controlled to evacuate the gas pressure in the process chamber 1 to a third preset pressure (e.g., 10 Pa), and the inlet assembly 2 is controlled to introduce process gas into the process chamber 1.
  • a third preset pressure e.g. 10 Pa
  • the inlet assembly 2 is controlled to stop introducing process gas into the process chamber 1
  • the evacuation assembly 3 is controlled to stop evacuating the process chamber 1
  • the two carrier components 10 are controlled to asynchronously glow discharge.
  • the delay time between the radio frequency signals of the two carrier components 10 can be 10 ms to deposit a tunneling oxide layer on the substrate (e.g., a silicon wafer).
  • the process gas for tunneling oxide layer is nitrous oxide or oxygen.
  • the extraction component 3 is controlled to extract the gas pressure in process chamber 1 to the third preset gas pressure.
  • the extraction component 3 is controlled to extract gas from process chamber 1 for a preset time (e.g., 15s), and then the intake component 2 is controlled to introduce process gas into process chamber 1.
  • the intake component 2 is controlled to stop introducing process gas into process chamber 1
  • the extraction component 3 is controlled to stop extracting gas from process chamber 1
  • the two carrier components 10 are controlled to asynchronously glow discharge, repeating the cycle until the thickness of the tunneling oxide layer reaches a preset thickness (e.g., 1.5nm-2.0nm).
  • a preset thickness e.g. 1.5nm-2.0nm.
  • the radio frequency of the RF power supply can be controlled to be 40kHz-13.56MHz, and the RF power to be 2kW-20kW.
  • a polycrystalline silicon layer and a mask layer are also prepared.
  • the temperature range for preparing the polycrystalline silicon layer and the mask layer can be the same as the temperature range for preparing the tunneling oxide layer (e.g., 300°C-500°C) to save process time and improve production efficiency.
  • the uniformity of thin films prepared with the same carrier component 10 can be controlled within 3%, and the uniformity of thin films prepared with different carrier components 10 can be controlled within 3%.
  • the uniformity and quality of the thin films are significantly improved.
  • the semiconductor process equipment includes a process chamber 1, an air intake assembly 2, an air extraction assembly 3, a power supply assembly 4, and a control assembly (not shown in the figure).
  • the process chamber 1 is equipped with at least two support components 10 for supporting the substrate; the air inlet assembly 2 is used to introduce process gas into the process chamber 1; the air extraction assembly 3 is used to extract air from the process chamber 1 to control the air pressure in the process chamber 1; and the power supply assembly 4 is used to provide radio frequency signals to the at least two support components 10 respectively.
  • the control assembly includes at least one memory and at least one processor.
  • the memory stores a computer program, and the processor executes the computer program to implement the thin film preparation method disclosed in any of the above embodiments.
  • FIG6 is a schematic diagram of the structure of an air intake component and an air extraction component disclosed in an embodiment of this application.
  • the air intake component 2 includes a first valve 20; the air extraction component 3 includes a second valve 31.
  • the first valve 20 is disposed in the air passage between the air supply component and the process chamber 1, and is used to control the opening or closing of the air passage between the air supply component and the process chamber 1.
  • the second valve 31 is disposed in the air passage between the vacuum pump 33 and the process chamber 1.
  • the vacuum pump 33 is used to extract air from the process chamber 1.
  • the second valve 31 is used to control the opening or closing of the air passage between the vacuum pump 33 and the process chamber 1.
  • the air supply component can be a plant air supply component.
  • the first valve 20 includes, but is not limited to, a pneumatic valve
  • the second valve 31 includes, but is not limited to, a butterfly valve.
  • the air intake assembly 2 can be controlled to introduce process gas into the process chamber 1; by controlling the opening of the second valve 31, the air extraction assembly 3 can be controlled to extract air from the process chamber 1; by controlling the closing of the first valve 20, the air intake assembly 2 can be controlled to stop introducing process gas into the process chamber 1; and by controlling the closing of the second valve 31, the air extraction assembly 3 can be controlled to stop extracting air from the process chamber 1.
  • the vacuum pump assembly 3 also includes a vacuum gauge 32, which measures the pressure inside the process chamber 1. Based on the measurement results of the vacuum gauge 32, the opening degree of the second valve 31 is adjusted, thereby regulating the pressure inside the process chamber 1.
  • the air intake assembly 2 also includes a gas mass flow meter 21, which measures the gas flow rate in the gas path between the gas supply component and the process chamber 1. Based on the measurement results of the gas mass flow meter 21, the opening degree of the first valve 20 is adjusted, thereby regulating the gas pressure inside the process chamber 1.
  • the air intake assembly 2 further includes a regulating valve 22 and a manual valve 23.
  • the regulating valve 22 is used to regulate the pressure of the air passage between the air supply component and the process chamber 1
  • the manual valve 23 is used to open or close the air passage between the air supply component and the process chamber 1.
  • FIG7 is a schematic diagram of another air intake component disclosed in the embodiment of this application.
  • the air intake component 2 may also include a gas buffer component 24 and an air path control component 25.
  • a gas buffer component 24 is disposed between the gas supply component and the process chamber 1, specifically between the gas supply component and the first valve 20.
  • the gas buffer component 24 is used to buffer the process gas supplied by the gas supply component, and when the gas passage between the gas buffer component 24 and the process chamber 1 is opened, the process gas is transferred to the process chamber 1.
  • the speed at which the gas buffer component 24 transfers the process gas to the process chamber 1 is greater than the speed at which the gas supply component transfers the process gas to the gas buffer component 24, thereby achieving rapid ventilation of the process chamber 1, reducing process time, improving production efficiency, and lowering production costs.
  • a pneumatic control component 25 is disposed between the gas supply component and the gas buffer component 24.
  • the pneumatic control component 25 is used to control the opening or closing of the pneumatic passage between the gas supply component and the gas buffer component 24.
  • the pneumatic control component 25 includes, but is not limited to, a pneumatic valve.
  • the air intake assembly 2 further includes a pressure measuring component 26.
  • the pressure measuring component 26 is disposed on the gas buffer component 24, specifically inside the gas buffer component 24, and is used to measure the gas pressure inside the gas buffer component 24, so as to control the gas path control component 25 according to the measurement result.
  • control component can send a first control command to the gas path control component 25 when the gas pressure inside the gas buffer component 24 rises to a fourth preset gas pressure (e.g., 20 psi), thereby closing the gas path between the gas buffer component 24 and the gas supply component; and send a second control command to the gas path control component 25 when the gas pressure inside the gas buffer component 24 drops to a fifth preset gas pressure, thereby opening the gas path between the gas buffer component 24 and the gas supply component.
  • the fifth preset gas pressure is lower than the fourth preset gas pressure.
  • the air intake assembly 2 further includes a first one-way control component 27, a second one-way control component 28, and a manual control component 29.
  • the first one-way control component 27 is disposed between the gas supply component and the gas path control component 25, and is used to control the gas flow direction to be unidirectional to prevent gas in the gas buffer component 24 from flowing back into the gas supply component.
  • the first one-way control component 27 includes, but is not limited to, a one-way valve.
  • the second one-way control component 28 is disposed between the gas buffer component 24 and the process chamber 1, specifically between the first valve 20 and the process chamber 1, and is used to control the gas flow direction to be unidirectional to prevent gas in the process chamber 1 from flowing back into the gas supply component.
  • the second one-way control component 28 includes, but is not limited to, a one-way valve.
  • a manual control component 29 is disposed between the first one-way control component 27 and the pneumatic control component 25, and is used to control the pneumatic path between the pneumatic control component 25 and the pneumatic supply component.
  • the manual control component 29 includes, but is not limited to, a hand valve.
  • the gas path control component 25, regulating valve 22, manual valve 23, and manual control component 29 can be opened to allow the gas supply component to charge the gas buffer component 24.
  • the gas path control component 25 is closed.
  • the first valve 20 is opened, and the process gas in the gas buffer component 24 is quickly introduced into the process chamber 1 using the pressure difference between the gas buffer component 24 and the process chamber 1. Based on the gas pressure in the process chamber 1 displayed by the vacuum gauge, when the gas pressure in the process chamber 1 reaches the first preset gas pressure, the first valve 20 is closed.

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Abstract

本公开提供一种薄膜制备方法和半导体工艺设备，将多个基片分别放入工艺腔室内的至少两个承载部件后，控制工艺腔室循环交替进行通气工艺和闷气工艺，并且，至少在工艺腔室进行闷气工艺时，控制至少两个承载部件异步辉光放电，其中，通气工艺用于向工艺腔室内通入沉积薄膜所需的工艺气体，在进行闷气工艺时工艺腔室内的气体的流动速度小于在进行通气工艺时工艺腔室内的气体的流动速度，从而可以提高制备的隧穿氧化层等薄膜的均匀性和稳定性，提高制备的隧穿氧化层等薄膜的质量。

Description

一种薄膜制备方法和半导体工艺设备 技术领域
本申请涉及半导体技术领域，具体涉及一种薄膜制备方法和半导体工艺设备。
背景技术
TOPCon(Tunnel Oxide Passivated Contact，隧穿氧化层钝化接触)太阳能电池的关键技术是制备一层超薄的隧穿氧化层和一层高掺杂的多晶硅薄层。目前都是采用管式PECVD(Plasma Enhanced Chemical Vapor Deposition，等离子体增强化学气相沉积)设备来制备隧穿氧化层，但是，目前的管式PECVD设备制备的隧穿氧化层的质量较差，导致太阳能电池的转换效率较低。
发明内容
本申请公开一种薄膜制备方法和半导体工艺设备，以提高管式PECVD设备制备的隧穿氧化层等薄膜的质量。
第一方面，本申请公开了一种薄膜沉积方法，应用于半导体工艺设备，所述半导体工艺设备包括工艺腔室，所述工艺腔室内设置有至少两个承载部件，所述承载部件用于承载基片，所述方法包括：将多个基片分别放入所述至少两个承载部件后，控制所述工艺腔室内循环交替进行通气工艺和闷气工艺，并至少在所述工艺腔室内进行闷气工艺时，控制所述至少两个承载部件异步辉光放电；其中，所述通气工艺用于向所述工艺腔室内通入沉积薄膜所需的工艺气体；在进行闷气工艺时所述工艺腔室内的气体的流动速度小于在进行通气工艺时所述工艺腔室内的气体的流动速度。
在一些实施例中，所述半导体工艺设备还包括进气组件和抽气组件，所述进气组件用于向所述工艺腔室内通入工艺气体，所述抽气组件用于对所述工艺腔室进行抽气，以控制所述工艺腔室内的气压，所述控制所述工艺腔室内交替进行通气工艺和闷气工艺包括：控制所述抽气组件对所述工艺腔室进行抽气，并控制所述进气组件向所述工艺腔室内通入工艺气体；在所述工艺腔室内的气压达到第一预设气压后，控制所述进气组件停止向所述工艺腔室内通入工艺气体，控制所述抽气组件停止对所述工艺腔室进行抽气。
在一些实施例中，所述第一预设气压大于或等于100Pa且小于或等于10000Pa。
在一些实施例中，所述半导体工艺设备还包括电源组件，所述电源组件用于向所述至少两个承载部件分别提供射频信号，所述射频信号用于激发所述工艺腔室内的工艺气体发生辉光放电产生等离子体，所述控制所述至少两个承载部件异步辉光放电包括：控制所述电源组件向所述至少两个承载部件提供射频开启时段不重叠的射频信号，所述射频开启时段为所述射频信号激发所述工艺腔室内的工艺气体发生辉光放电产生等离子体的时段。
在一些实施例中，所述至少两个承载部件中任意两个承载部件的射频信号之间都具有延时时长，所述延时时长大于或等于所述射频开启时段的时长且小于或等于所述射频开启时段的时长与射频关闭时段的时长的差值，所述射频关闭时段为一个信号周期内除所述射频开启时段之外的时段。
在一些实施例中，任一所述承载部件的射频信号的射频开启时段与射频关闭时段的时长比值都大于或等于1/6且小于或等于1/200。
第二方面，本申请公开了一种半导体工艺设备，包括工艺腔室、进气组件、抽气组件、电源组件和控制组件；所述工艺腔室内设置有至少两个承载部件，所述承载部件用于承载基片；所述进气组件用于向所述工艺腔室内通入工艺气体；所述抽气组件用于对所述工艺腔室进行抽气，以控制所述工艺腔室的气压；所述电源组件用于向所述至少两个承载部件分别提供射频信号；所述控制组件包括至少一个存储器和至少一个处理器，所述存储器内存储有计算机程序，所述处理器用于执行所述计算机程序以实现如上任一项所述的薄膜制备方法。
在一些实施例中，所述进气组件包括气体缓存部件和气路控制部件；所述气体缓存部件设置在供气部件与工艺腔室之间，所述气体缓存部件用于缓存所述供气部件提供的工艺气体，并在所述气体缓存部件与所述工艺腔室之间的气路开启时，将所述工艺气体传输至所述工艺腔室；所述气体缓存部件向所述工艺腔室传输工艺气体的速度大于所述供气部件向所述气体缓存部件传输工艺气体的速度；所述气路控制部件设置在所述气体缓存部件和所述供气部件之间，所述气路控制部件用于控制所述气体缓存部件与所述供气部件之间的气路的开启或关闭。
在一些实施例中，所述进气组件还包括压力测量部件；所述压力测量部件设置在所述气体缓存部件上，用于测量所述气体缓存部件内部的气压。
在一些实施例中，所述进气组件还包括第一单向控制部件、第二单向控制部件和手动控制部件；所述第一单向控制部件设置在所述供气部件与所述气路控制部件之间，所述第二单向控制部件设置在所述气体缓存部件与所述工艺腔室之间，所述手动控制部件设置在所述第一单向控制部件与所述气路控制部件之间。
本申请公开的薄膜制备方法和半导体工艺设备，将多个基片分别放入工艺腔室内的至少两个承载部件后，控制工艺腔室循环交替进行通气工艺和闷气工艺，因为通气工艺用于向工艺腔室内通入沉积薄膜所需的工艺气体，且在进行闷气工艺时工艺腔室内的气体的流动速度小于在进行通气工艺时工艺腔室内的气体的流动速度，所以，可以在保证工艺腔室内具有沉积薄膜所需的工艺气体的情况下，减小工艺腔室内气体的流动性，从而可以避免因气体流动性较大导致的工艺腔室内等离子体分布不均匀的问题，进而可以提高制备的隧穿氧化层等薄膜的均匀性，提高制备的隧穿氧化层等薄膜的质量。
并且，因为至少在工艺腔室进行闷气工艺时，控制至少两个承载部件异步辉光放电，所以，不仅可以避免一个承载部件辉光放电产生的等离子体和副产物被另一个承载部件用于辉光放电产生等离子体，导致的工艺腔室内等离子体分布不均匀的问题，而且可以避免因承载部件之间的放电干扰，而影响隧穿氧化层等薄膜制备的稳定性的问题，进而可以进一步提高制备的隧穿氧化层等薄膜的均匀性和稳定性，进一步提高制备的隧穿氧化层等薄膜的质量。
附图说明
为了更清楚地说明本申请实施例或背景技术中的技术方案，下面将对本申请实施例或背景技术中所需要使用的附图进行说明。
图1为一种管式PECVD设备的结构示意图。
图2为一种电源组件向两个承载部件提供的射频信号示意图。
图3为本申请实施例公开的一种薄膜制备方法的流程图。
图4为本申请实施例公开的一种电源组件与两个承载部件的连接关系示意图。
图5为本申请实施例公开的一种电源组件向两个承载部件提供的异步射频信号示意图。
图6为本申请实施例公开的一种进气组件和抽气组件的结构示意图。
图7为本申请实施例公开的另一种进气组件的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
如图1所示，图1为一种管式PECVD设备的结构示意图，包括工艺腔室1、进气组件2、抽气组件3和电源组件4等。其中，工艺腔室1内设置有两个承载部件10，该承载部件10用于承载晶圆等基片，该承载部件10包括但不仅限于石墨舟，该工艺腔室1包括但不仅限于炉管；进气组件2用于向工艺腔室1通入工艺气体；抽气组件3用于对工艺腔室1进行抽气，以控制工艺腔室1内的气压；电源组件4用于向两个承载部件10分别提供射频信号，射频信号用于激发工艺腔室1内的工艺气体发生辉光放电产生等离子体，以使等离子体在晶圆等基片表面沉积形成隧穿氧化层等薄膜。但是，目前的管式PECVD设备制备的隧穿氧化层的质量较差，导致太阳能电池的转换效率较低。
发明人研究发现，因为一个承载部件10靠近工艺腔室1的进气口设置、另一个承载部件10靠近工艺腔室1的出气口设置，所以，在进气组件2通过进气口持续向工艺腔室1内通入工艺气体以及抽气组件3通过抽气口持续对工艺腔室1进行抽气的过程中，工艺腔室1内的气体会从进气口向出气口流动，导致靠近进气口的承载部件10产生的等离子体会随气体向出气口流动，导致等离子体在工艺腔室1内不均匀分布，进而导致工艺腔室1内制备的隧穿氧化层等薄膜的均匀性较差，进而导致隧穿氧化层等薄膜的质量较差。
此外，因为电源组件4同时向两个承载部件10提供如图2所示同步的射频信号，所以，会使得两个承载部件10同时辉光放电，而靠近进气口的承载部件10产生的等离子体和副产物随气体流动到靠近出气口的承载部件10，会导致等离子体和副产物被靠近出气口的承载部件10继续用于辉光放电产生等离子体，进一步加剧了等离子体在工艺腔室1内的不均匀分布，进一步加剧了隧穿氧化层等薄膜的不均匀性，并且，承载部件10之间的放电干扰又会影响隧穿氧化层等薄膜制备的稳定性，导致隧穿氧化层等薄膜的质量较差。
基于此，本申请公开一种薄膜制备方案，通过控制工艺腔室循环交替进行气体流动速度较大的通气工艺和气体流动速度较小的闷气工艺，在保证工艺腔室内具有沉积薄膜所需的工艺气体的情况下，减小工艺腔室内气体的流动性，提高制备的隧穿氧化层等薄膜的均匀性，通过至少在工艺腔室进行闷气工艺时，控制至少两个承载部件异步辉光放电，来进一步提高制备的隧穿氧化层等薄膜的均匀性和稳定性，提高制备的隧穿氧化层等薄膜的质量。
作为本申请公开内容的一种实现方式，本申请实施例公开了一种薄膜制备方法，用于制备隧穿氧化层等薄膜，该薄膜制备方法应用于管式PECVD设备等半导体工艺设备，参考图1，该半导体工艺设备包括工艺腔室1，该工艺腔室1内设置有至少两个承载部件10，该承载部件10用于承载晶圆等基片，如图3所示，图3为本申请实施例公开的一种薄膜制备方法的流程图，该方法包括：
S101：将多个基片分别放入至少两个承载部件10后，控制工艺腔室1内循环交替进行通气工艺和闷气工艺，并至少在工艺腔室1内进行闷气工艺时，控制至少两个承载部件10异步辉光放电。
因为通气工艺用于向工艺腔室1内通入沉积薄膜所需的工艺气体，所以，可以保证工艺腔室1内具有沉积薄膜所需的工艺气体。因为在进行闷气工艺时工艺腔室1内的气体的流动速度小于在进行通气工艺时工艺腔室1内的气体的流动速度，所以，可以减小工艺腔室1内气体的流动性，从而可以避免因气体流动性较大导致的工艺腔室1内的等离子体分布不均匀的问题，进而可以提高制备的隧穿氧化层等薄膜的均匀性，进而可以提高制备的隧穿氧化层等薄膜的质量。
又因为至少在工艺腔室1内进行闷气工艺时，控制至少两个承载部件10异步辉光放电，所以，不仅可以避免因一个承载部件10辉光放电产生的等离子体和副产物被另一个承载部件10继续用于辉光放电产生等离子体，而导致的工艺腔室1内的等离子体分布不均匀的问题，而且可以避免因承载部件10之间的放电干扰而影响隧穿氧化层等薄膜制备的稳定性的问题，进而可以进一步提高制备的隧穿氧化层等薄膜的均匀性和稳定性，进而可以提高制备的隧穿氧化层等薄膜的质量。
此外，控制工艺腔室1内循环交替进行通气工艺和闷气工艺，还可以提高工艺气体的利用率，减少气体损耗，降低生产成本。
本申请一些实施例中，可以仅在工艺腔室1内进行闷气工艺时，控制至少两个承载部件10异步辉光放电，在工艺腔室1内进行通气工艺时，控制至少两个承载部件10不辉光放电，这样不仅可以避免一个承载部件10辉光放电产生的等离子体和副产物随气体流动到另一个承载部件10，而且可以使得一个承载部件10产生的等离子体和副产物在另一个承载部件10辉光放电之前湮灭，避免一个承载部件10产生的等离子体和副产物被另一个承载部件10继续用于辉光放电产生等离子体，进而可以进一步提高工艺腔室1内等离子体的分布均匀性，进而可以进一步提高制备的隧穿氧化层等薄膜的均匀性，提高制备的隧穿氧化层等薄膜的质量。
当然，本申请并不仅限于此，在另一些实施例中，可以在工艺腔室1内进行通气工艺和闷气工艺时，都控制至少两个承载部件10异步辉光放电，这样即便一个承载部件10产生的等离子体和副产物随气体流动到另一个承载部件10，但是因为一个承载部件10产生的等离子体和副产物会在另一个承载部件10辉光放电之前湮灭，所以，也可以避免一个承载部件10产生的等离子体和副产物被另一个承载部件10继续用于辉光放电产生等离子体，也可以提高工艺腔室1内等离子体的分布均匀性，也可以提高制备的隧穿氧化层等薄膜的均匀性，提高制备的隧穿氧化层等薄膜的质量。
需要说明的是，控制至少两个承载部件10异步辉光放电，只能提高不同承载部件10制备的薄膜的均匀性，但是，控制工艺腔室1内循环交替进行通气工艺和闷气工艺，不仅可以提高不同承载部件10制备的薄膜的均匀性，而且可以提高同一承载部件10制备的薄膜的均匀性。
本申请一些实施例中，参考图1，半导体工艺设备还包括进气组件2和抽气组件3，进气组件2用于向工艺腔室1内通入工艺气体，抽气组件3用于对工艺腔室1进行抽气，以控制工艺腔室1内的气压，基于此，控制工艺腔室1内交替进行通气工艺和闷气工艺包括：控制抽气组件3对工艺腔室1进行抽气，并控制进气组件2向工艺腔室1内通入工艺气体；在工艺腔室1内的气压达到第一预设气压后，控制进气组件2停止向工艺腔室1内通入工艺气体，控制抽气组件3停止对工艺腔室1进行抽气，以使在进行闷气工艺时工艺腔室1内的气体的流动速度等于0。
当然，本申请并不仅限于此，在另一些实施例中，在进行闷气工艺时工艺腔室1内的气体的流动速度也可以大于0且小于预设流动速度，该预设流动速度可以小于或等于在进行通气工艺时工艺腔室1内的气体的流动速度。可以理解的是，只要使得在进行闷气工艺时工艺腔室1内的气体的流动速度小于在进行通气工艺时工艺腔室1内的气体的流动速度，就可以在一定程度上提高工艺腔室1内等离子体的分布均匀性，提高制备的隧穿氧化层等薄膜的均匀性，提高制备的隧穿氧化层等薄膜的质量。
需要说明的是，在进行闷气工艺的过程中，沉积薄膜会消耗工艺腔室1内的气体，工艺腔室1内的压力会下降，因此，在此过程中可以实时监控工艺腔室1内的压力，以确定闷气工艺的结束时间。当然，也可以通过确定工艺腔室1内的沉积时间来确定闷气工艺的结束时间。
还需要说明的是，可以根据制备的薄膜如隧穿氧化层的厚度确定通气工艺和闷气工艺的循环次数。若通气工艺和闷气工艺的循环次数大于或等于2，则可以在通气工艺和闷气工艺的循环每完成一次之后，确定工艺腔室1内的气压是否小于第二预设气压或确定工艺腔室1内的沉积时长是否大于等于预设时长，若是，则进行下一循环中的通气工艺，即，控制抽气组件3再次对工艺腔室1进行抽气，并控制进气组件2再次向工艺腔室1内通入工艺气体，同样，在工艺腔室1内的气压达到第一预设气压后，控制进气组件2停止向工艺腔室1内通入工艺气体，控制抽气组件3停止对工艺腔室1进行抽气。若否，则继续进行本次循环中的闷气工艺，即，保持停止向工艺腔室内通入工艺气体，控制抽气组件停止对工艺腔室进行抽气的状态，直至工艺腔室1内的气压小于第二预设气压或确定工艺腔室1内的沉积时长大于等于预设时长。
可以理解的是，可以在控制抽气组件3对工艺腔室1进行抽气，使得工艺腔室1的气压达到第三预设气压之后，再控制进气组件2向工艺腔室1内通入工艺气体，以减少工艺腔室1内的杂质气体。
本申请一些实施例中，第一预设气压大于或等于100Pa且小于或等于10000Pa；第二预设气压小于或等于100Pa；第三预设气压小于10Pa。当然，本申请并不仅限于此，在另一些实施例中，可以根据薄膜沉积要求确定第一预设气压、第二预设气压和第三预设气压的大小，在此不再赘述。
本申请一些实施例中，参考图1，半导体工艺设备还包括电源组件4，电源组件4用于向至少两个承载部件10分别提供射频信号，该射频信号用于激发工艺腔室1内的工艺气体发生辉光放电产生等离子体，如图4所示，图4为本申请实施例公开的一种电源组件4与两个承载部件10的连接关系示意图，以工艺腔室1内设置有两个承载部件10为例，电源组件4通过两个输出通道向两个承载部件10分别提供射频信号，基于此，控制至少两个承载部件10异步辉光放电包括：控制电源组件4向至少两个承载部件10的射频信号为异步射频信号，其中，异步射频信号是指任意两个射频信号的射频开启时段不重叠，该射频开启时段为射频信号激发工艺腔室1内的工艺气体发生辉光放电产生等离子体的时段。
以工艺腔室1内设置有两个承载部件10为例，如图5所示，图5为本申请实施例公开的一种电源组件向两个承载部件提供的异步射频信号示意图，其中一个承载部件的射频信号的射频开启时段Ton与另一个承载部件的射频信号的射频开启时段Ton不重叠，以使这两个承载部件10异步辉光放电或不同时辉光放电。
可以理解的是，射频信号为周期性信号，在每个信号周期内，都包括一个射频开启时段Ton和一个射频关闭时段Toff。也就是说，射频关闭时段Toff为一个信号周期内除射频开启时段Ton之外的时段。在射频开启时段Ton内，射频信号激发工艺腔室1内的工艺气体发生辉光放电产生等离子体；在射频关闭时段Toff内，射频信号不激发工艺腔室1内的工艺气体。
本申请一些实施例中，至少两个承载部件10中的任意两个承载部件10的射频信号之间都具有延时时长，以使至少两个承载部件10中的任意两个承载部件10不同时辉光放电。其中，延时时长例如是指图5所示的其中一个射频信号的第一个射频开启时段Ton的上升沿与另一个射频信号的第一个射频开启时段Ton的上升沿之间的时间差值。延时时长可以根据射频信号的射频开启时段Ton和射频关闭时段Toff的时长决定。一般情况下，延时时长小于或等于射频开启时段Ton的时长且大于或等于射频关闭时段Toff的时长与射频开启时段Ton的时长的差值。
可以理解的是，为了保证等离子体和副产物具有足够的湮灭时间，可以相对增加延时时长。在工艺腔室1内气体流动速度较小的情况下，为了提高薄膜沉积速率，可以相对增加射频开启时段Ton的时长或增加射频开启时段Ton相对于射频关闭时段Toff的时长比例。
本申请一些实施例中，任一承载部件10的射频信号的射频开启时段Ton与射频关闭时段Toff的时长比值都大于或等于1/6且小于或等于1/200，以保证任意两个承载部件10的射频信号之间的延时时长都小于或等于射频开启时段Ton的时长且大于或等于射频关闭时段Toff的时长与射频开启时段Ton的时长的差值。
需要说明的是，可以根据不同薄膜的沉积工艺，设定不同的射频开启时段Ton与射频关闭时段Toff的时长比值。以沉积的薄膜为隧穿氧化层为例，因为隧穿氧化层对膜层均匀性要求较高，所以，一般采用较小的射频开启时段Ton与射频关闭时段Toff的时长比值，例如1/100或2/50。以沉积的薄膜为多晶硅层为例，因为多晶硅层的膜层厚度较厚，其对膜层均匀性要求较低，所以，一般采用较大的射频开启时段Ton与射频关闭时段Toff的时长比值，例如1/10。
以射频开启时段Ton与射频关闭时段Toff的时长比值是2/200，且射频开启时段Ton的时长等于2ms为例，延迟时长大于或等于2ms且小于或等于198ms；其中，延迟时长是2ms到198ms之间的一个固定值。以射频开启时段Ton与射频关闭时段Toff的时长比值是4/40，且射频开启时段Ton的时长等于4ms为例，延迟时长大于或等于4ms且小于或等于36ms。其中，延迟时长是4ms到36ms之间的一个固定值。
还需要说明的是，本申请实施例中的电源组件4包括射频电源和匹配器，射频电源通过匹配器向工艺腔室1内的承载部件10提供射频信号，匹配器用于实现射频电源与承载部件10之间的阻抗匹配。该射频电源还与半导体工艺设备的下位机相连，用户通过上位机设定射频信号的延迟时间之后，上位机通过下位机将相应的控制信号发送至射频电源，以使射频电源将具有相应延迟时间的射频信号发送至上述至少两个承载部件10。
本申请一些实施例中，以隧穿氧化层为例对薄膜沉积过程进行说明。首先，将表面清洗干净的多个基片如硅片分别放入两个承载部件10如石墨舟，通过传动装置将两个承载部件10传输至真空的工艺腔室1内，并使两个承载部件10分别与对应的电极相连。对工艺腔室1进行抽真空捡漏测试后，将承载部件10如石墨舟和基片如硅片升温，例如升温至300℃-500℃，然后控制抽气组件3将工艺腔室1内的气压抽至第三预设气压(如10Pa)，并控制进气组件2向工艺腔室1内通入工艺气体，在工艺腔室1内的气压达到第一预设气压(如1000Pa)后，控制进气组件2停止向工艺腔室1内通入工艺气体，控制抽气组件3停止对工艺腔室1进行抽气，并控制两个承载部件10异步辉光放电，这两个承载部件10的射频信号之间的延迟时长可以为10ms，以在基片如硅片上沉积隧穿氧化层。其中，隧穿氧化层的工艺气体为笑气或氧气，该笑气为一氧化二氮。
若通气工艺和闷气工艺的循环次数大于或等于2，则在工艺腔室1内的气压小于第二预设气压或工艺腔室1内的沉积时间大于预设时间后，控制抽气组件3将工艺腔室1内的气压抽至第三预设气压，或者，控制抽气组件3对工艺腔室1进行预设时间(如15s)的抽气，然后控制进气组件2向工艺腔室1内通入工艺气体，在工艺腔室1内的气压达到第一预设气压后，控制进气组件2停止向工艺腔室1内通入工艺气体，控制抽气组件3停止对工艺腔室1进行抽气，并控制两个承载部件10异步辉光放电，循环往复，直到隧穿氧化层的厚度达到预设厚度(如1.5nm-2.0nm)。其中，在控制两个承载部件10异步辉光放电的过程中，可以控制射频电源的射频频率为40kHz-13.56MHz，射频功率为2kW-20kW。
需要说明的是，在制备太阳能电池的过程中，在制备完成隧穿氧化层后，还会制备多晶硅层和掩膜层，其中，制备多晶硅层和掩膜层的温度范围可以与制备隧穿氧化层的温度范围(如300℃-500℃)相同，以节省工艺时间提高生产效率。
采用本申请实施例公开的薄膜制备方法，可以将同一承载部件10制备的薄膜的均匀性控制在3％以内，将不同承载部件10制备的薄膜的均匀性控制在3％以内。与传统的薄膜制备方法相比，薄膜均匀性和质量显著提高。
作为本申请公开内容的一种实现方式，本申请实施例公开了一种半导体工艺设备，参考图1，该半导体工艺设备包括工艺腔室1、进气组件2、抽气组件3、电源组件4和控制组件(图中未示出)等。
其中，工艺腔室1内设置有至少两个承载部件10，承载部件10用于承载基片；进气组件2用于向工艺腔室1内通入工艺气体；抽气组件3用于对工艺腔室1进行抽气，以控制工艺腔室1的气压；电源组件4用于向至少两个承载部件10分别提供射频信号。控制组件包括至少一个存储器和至少一个处理器，存储器内存储有计算机程序，处理器用于执行计算机程序以实现如上任一实施例公开的薄膜制备方法。
本申请一些实施例中，如图6所示，图6为本申请实施例公开的一种进气组件和抽气组件的结构示意图，进气组件2包括第一阀门20；抽气组件3包括第二阀门31，第一阀门20设置在供气部件与工艺腔室1之间的气路上，用于控制供气部件与工艺腔室1之间气路的开启或关闭，第二阀门31设置在真空泵33与工艺腔室1之间的气路上，真空泵33用于对工艺腔室1进行抽气，第二阀门31用于控制真空泵33与工艺腔室1之间气路的开启或关闭，其中，供气部件可以为厂务供气部件，第一阀门20包括但不仅限于气动阀，第二阀门31包括但不仅限于蝶阀。
基于此，可以通过控制第一阀门20开启，控制进气组件2向工艺腔室1内通入工艺气体，通过控制第二阀门31开启，控制抽气组件3对工艺腔室1进行抽气，通过控制第一阀门20关闭，控制进气组件2停止向工艺腔室1内通入工艺气体，通过控制第二阀门31关闭，控制抽气组件3停止对工艺腔室1进行抽气。
需要说明的是，抽气组件3还包括真空计32，真空计32用于测量工艺腔室1内压力，以根据真空计32的测量结果，调节第二阀门31的开度，进而调节工艺腔室1内的压力。进气组件2还包括气体质量流量计21，用于测量供气部件与工艺腔室1之间气路中的气体流量，以根据气体质量流量计21的测量结果，调节第一阀门20的开度，进而调节工艺腔室1内的气体压力。
本申请另一些实施例中，进气组件2还包括调节阀22和手阀23，调节阀22用于调节供气部件与工艺腔室1之间气路的压力，手阀23用于开启或关闭供气部件与工艺腔室1之间气路。在控制进气组件2向工艺腔室1内通入工艺气体时，不仅要开启第一阀门20，还要开启调节阀22和手阀23。
当然，本申请并不仅限于此，在另一些实施例中，如图7所示，图7为本申请实施例公开的另一种进气组件的结构示意图，进气组件2还可以包括气体缓存部件24和气路控制部件25。
气体缓存部件24设置在供气部件与工艺腔室1之间，具体设置在供气部件与第一阀门20之间，气体缓存部件24用于缓存供气部件提供的工艺气体，并在气体缓存部件24与工艺腔室1之间的气路开启时，将工艺气体传输至工艺腔室1。其中，气体缓存部件24向工艺腔室1传输工艺气体的速度大于供气部件向气体缓存部件24传输工艺气体的速度，以实现工艺腔室1的快速通气，以减少工艺时间，提高生产效率，降低生产成本。
气路控制部件25设置在供气部件与气体缓存部件24之间，气路控制部件25用于控制供气部件与气体缓存部件24之间的气路的开启或关闭。气路控制部件25包括但不仅限于气动阀。
在上述实施例的基础上，本申请一些实施例中，如图7所示，进气组件2还包括压力测量部件26。该压力测量部件26设置在气体缓存部件24上，具体可以设置在气体缓存部件24内部，用于测量气体缓存部件24内部的气压，以根据测量结果控制气路控制部件25。
具体地，控制组件可以在气体缓存部件24内部的气压上升至第四预设气压(如20psi)时，向气路控制部件25发送第一控制指令，控制气体缓存部件24与供气部件之间的气路关闭；在气体缓存部件24内部的气压下降至第五预设气压时，向气路控制部件25发送第二控制指令，控制气体缓存部件24与供气部件之间的气路开启。其中，第五预设气压小于第四预设气压。
在上述实施例的基础上，本申请一些实施例中，如图7所示，进气组件2还包括第一单向控制部件27、第二单向控制部件28和手动控制部件29。
第一单向控制部件27设置在供气部件与气路控制部件25之间，用于控制气体的流向为单一流向，防止气体缓存部件24内的气体倒灌到供气部件。第一单向控制部件27包括但不仅限于单向阀。
第二单向控制部件28设置在气体缓存部件24与工艺腔室1之间，具体地设置在第一阀门20与工艺腔室1之间，用于控制气体的流向为单一流向，防止工艺腔室1内的气体倒灌到供气部件。第二单向控制部件28包括但不仅限于单向阀。
手动控制部件29设置在第一单向控制部件27与气路控制部件25之间，用于控制气路控制部件25与供气部件之间的气路。手动控制部件29包括但不仅限于手阀。
可以理解的是，通过设置第一单向控制部件27、第二单向控制部件28和手动控制部件29，可以进一步加强气路和设备的安全性。
需要说明的是，在未沉积薄膜之前，可以先控制气路控制部件25、调节阀22、手阀23和手动控制部件29开启，使得供气部件向气体缓存部件24充气，在气体缓存部件24内部的气压上升至第四预设气压时，控制气路控制部件25关闭。在沉积薄膜的过程中，控制第一阀门20开启，利用气体缓存部件24与工艺腔室1之间的气压差，将气体缓存部件24内的工艺气体快速通入至工艺腔室1，并根据真空计显示的工艺腔室1内的气压，确定工艺腔室1内的气压到达第一预设气压时，控制第一阀门20关闭。
以上实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上实施例仅表达了本说明书的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本说明书构思的前提下，还可以做出若干变形和改进，这些都属于本说明书的保护范围。因此，本说明书专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种薄膜制备方法，其特征在于，应用于半导体工艺设备，所述半导体工艺设备包括工艺腔室，所述工艺腔室内设置有至少两个承载部件，所述承载部件用于承载基片，所述方法包括：
    将多个基片分别放入所述至少两个承载部件后，控制所述工艺腔室内循环交替进行通气工艺和闷气工艺，并至少在所述工艺腔室内进行闷气工艺时，控制所述至少两个承载部件异步辉光放电；
    其中，所述通气工艺用于向所述工艺腔室内通入沉积薄膜所需的工艺气体；在进行闷气工艺时所述工艺腔室内的气体的流动速度小于在进行通气工艺时所述工艺腔室内的气体的流动速度。
  2. 根据权利要求1所述的薄膜制备方法，其特征在于，所述半导体工艺设备还包括进气组件和抽气组件，所述进气组件用于向所述工艺腔室内通入工艺气体，所述抽气组件用于对所述工艺腔室进行抽气，以控制所述工艺腔室内的气压，所述控制所述工艺腔室内交替进行通气工艺和闷气工艺包括：
    控制所述抽气组件对所述工艺腔室进行抽气，并控制所述进气组件向所述工艺腔室内通入工艺气体；
    在所述工艺腔室内的气压达到第一预设气压后，控制所述进气组件停止向所述工艺腔室内通入工艺气体，控制所述抽气组件停止对所述工艺腔室进行抽气。
  3. 根据权利要求2所述的薄膜制备方法，其特征在于，所述第一预设气压大于或等于100Pa且小于或等于10000Pa。
  4. 根据权利要求1所述的薄膜制备方法，其特征在于，所述半导体工艺设备还包括电源组件，所述电源组件用于向所述至少两个承载部件分别提供射频信号，所述射频信号用于激发所述工艺腔室内的工艺气体发生辉光放电产生等离子体，所述控制所述至少两个承载部件异步辉光放电包括：
    控制所述电源组件向所述至少两个承载部件提供射频开启时段不重叠的射频信号，所述射频开启时段为所述射频信号激发所述工艺腔室内的工艺气体发生辉光放电产生等离子体的时段。
  5. 根据权利要求4所述的薄膜制备方法，其特征在于，所述至少两个承载部件中任意两个承载部件的射频信号之间都具有延时时长，所述延时时长大于或等于所述射频开启时段的时长且小于或等于所述射频开启时段的时长与射频关闭时段的时长的差值，所述射频关闭时段为一个信号周期内除所述射频开启时段之外的时段。
  6. 根据权利要求5所述的薄膜制备方法，其特征在于，任一所述承载部件的射频信号的射频开启时段与射频关闭时段的时长比值都大于或等于1/6且小于或等于1/200。
  7. 一种半导体工艺设备，其特征在于，包括工艺腔室、进气组件、抽气组件、电源组件和控制组件；
    所述工艺腔室内设置有至少两个承载部件，所述承载部件用于承载基片；所述进气组件用于向所述工艺腔室内通入工艺气体；所述抽气组件用于对所述工艺腔室进行抽气，以控制所述工艺腔室的气压；所述电源组件用于向所述至少两个承载部件分别提供射频信号；
    所述控制组件包括至少一个存储器和至少一个处理器，所述存储器内存储有计算机程序，所述处理器用于执行所述计算机程序以实现权利要求1至6任一项所述的薄膜制备方法。
  8. 根据权利要求7所述的半导体工艺设备，其特征在于，所述进气组件包括气体缓存部件和气路控制部件；
    所述气体缓存部件设置在供气部件与工艺腔室之间，所述气体缓存部件用于缓存所述供气部件提供的工艺气体，并在所述气体缓存部件与所述工艺腔室之间的气路开启时，将所述工艺气体传输至所述工艺腔室；所述气体缓存部件向所述工艺腔室传输工艺气体的速度大于所述供气部件向所述气体缓存部件传输工艺气体的速度；
    所述气路控制部件设置在所述气体缓存部件和所述供气部件之间，所述气路控制部件用于控制所述气体缓存部件与所述供气部件之间的气路的开启或关闭。
  9. 根据权利要求8所述的半导体工艺设备，其特征在于，所述进气组件还包括压力测量部件；
    所述压力测量部件设置在所述气体缓存部件上，用于测量所述气体缓存部件内部的气压。
  10. 根据权利要求9所述的半导体工艺设备，其特征在于，所述进气组件还包括第一单向控制部件、第二单向控制部件和手动控制部件；
    所述第一单向控制部件设置在所述供气部件与所述气路控制部件之间，所述第二单向控制部件设置在所述气体缓存部件与所述工艺腔室之间，所述手动控制部件设置在所述第一单向控制部件与所述气路控制部件之间。
PCT/CN2025/101123 2024-07-01 2025-06-16 一种薄膜制备方法和半导体工艺设备 Pending WO2026007677A1 (zh)

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