WO2025213600A1 - 一种基于Sn掺杂PBSE量子点的中红外焦平面探测器制备方法 - Google Patents

一种基于Sn掺杂PBSE量子点的中红外焦平面探测器制备方法

Info

Publication number
WO2025213600A1
WO2025213600A1 PCT/CN2024/104409 CN2024104409W WO2025213600A1 WO 2025213600 A1 WO2025213600 A1 WO 2025213600A1 CN 2024104409 W CN2024104409 W CN 2024104409W WO 2025213600 A1 WO2025213600 A1 WO 2025213600A1
Authority
WO
WIPO (PCT)
Prior art keywords
solution
quantum dots
mid
quantum dot
focal plane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
PCT/CN2024/104409
Other languages
English (en)
French (fr)
Inventor
李朝晖
陈逸帆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sun Yat Sen University
Original Assignee
Sun Yat Sen University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sun Yat Sen University filed Critical Sun Yat Sen University
Publication of WO2025213600A1 publication Critical patent/WO2025213600A1/zh
Priority to US19/409,769 priority Critical patent/US20260090178A1/en
Pending legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/152—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising zinc oxide, e.g. ZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G21/00—Compounds of lead
    • C01G21/21—Sulfides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • C09K11/88—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H10F77/1275—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H10K30/35—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains comprising inorganic nanostructures, e.g. CdSe nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/03—Particle morphology depicted by an image obtained by SEM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Definitions

  • the present invention relates to the field of mid-infrared focal plane detector thermal imaging technology, and more specifically, to a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots.
  • infrared detectors have evolved from the first to the fourth generation, gradually evolving from single-pixel detectors to large-area, miniaturized, low-cost, dual-color, and multi-array focal plane detectors. Based on the infrared wavelength transmitted through the atmospheric window, infrared detectors can be divided into near-infrared detectors (1-3 ⁇ m), mid-infrared detectors (3-5 ⁇ m), and far-infrared detectors (8-10 ⁇ m). Furthermore, based on the operating temperature, infrared detectors can be further divided into cooled and uncooled types. Cooled detectors are widely used due to their high detectivity and low signal-to-noise ratio.
  • Uncooled detectors are favored in the civilian market due to their chip-scale size and room-temperature operation. Based on their operating principle, they can be divided into thermal and photon detectors. Photon detectors have a response speed one to two orders of magnitude higher than thermal detectors, offering significant advantages in thermal imaging applications in focal plane arrays.
  • detectors In terms of infrared focal plane detector fabrication processes, currently commercialized detectors primarily utilize flip-chip packaging of the detector on a readout circuit (ROIC) substrate fabricated using a Si CMOS process, and direct thin-film growth.
  • the former utilizes a flip-chip connection between the indium pillars on the detector film and the indium pillars on the ROIC; the latter utilizes thin-film growth techniques such as MOCVD or MBE to grow the detector film directly on the ROIC.
  • Both processes are complex and limited in functionality, requiring high equipment requirements, resulting in high process costs, poor controllability, and large material sizes.
  • the present invention provides a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots.
  • the preparation process is simple and the detection efficiency of the detector is effectively improved.
  • the technical solution adopted by the present invention is:
  • a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots comprises the following steps:
  • An ITO thin film was deposited on the ZnO electron transport layer by ion beam sputtering as the top electrode to obtain a mid-infrared focal plane detector.
  • the mid-infrared focal plane detector is prepared on an ROIC substrate, and the PIN heterojunction of the Au bottom electrode, PbS hole transport layer, Sn-doped PbSe photosensitive layer, and ZnO electron transport layer is constructed in sequence by ion beam sputtering, spin coating, spin coating, and ion beam sputtering, and finally the ITO top electrode is evaporated by ion beam sputtering.
  • the present invention prepares a focal plane detector based on Sn-doped PbSe quantum dots.
  • the smaller size of PbSe quantum dots can effectively prevent the propagation of thermal noise.
  • the quantum dots have a band gap that changes with size, they can produce light-sensitive materials with different spectral responses.
  • the band gap of PbSe quantum dots is 4.7 ⁇ m, so PbSe quantum dots can achieve detection in the mid-infrared band.
  • the present invention based on the advantages of Sn-doped PbSe quantum dots with high and low infrared response, realizes the preparation of a low-cost, chip-based, and simple-to-process uncooled PbSe mid-infrared focal plane detector.
  • Sn-doped PbSe quantum dots and PbS quantum dots are synthesized by hot injection, wherein the Sn-doped PbSe quantum dots are surface-modified by room temperature oxidation and liquid phase iodination after synthesis.
  • step S2 includes:
  • the PbS quantum dot spin coating solution is spin-coated on the bottom electrode array to obtain a PbS quantum dot spin coating
  • the PbS quantum dot coating layer spin-coated on the bottom electrode of the array was treated with a methanol solution of EDT for ligand exchange and rinsed with methanol;
  • step S24 Repeat step S23 to make the size of the PbS quantum dots reach the set range, thus completing the preparation of the PbS quantum dot hole transport layer.
  • step S21 includes:
  • the lead oxide, the ODE solution, the OA solution is mixed to obtain a mixture, and the mixture is heated to 140 °C ⁇ 150 °C under vacuum;
  • step S211 specifically includes: weighing an appropriate amount of lead oxide into container A, then adding ODE and OA solutions in an amount 2 to 3 times the weight of the lead oxide into container A, and heating container A in a vacuum at 100° C. to 110° C. for a period of time until the temperature rises to 140° C. to 150° C.
  • step S3 includes:
  • step S33 Repeat step S32 at least twice to make the size of the Sn-doped PbSe quantum dots reach the set range, thereby completing the preparation of the Sn-doped PbSe quantum dot photosensitive layer.
  • step S31 specifically includes:
  • the selenium powder is dissolved in a trioctylphosphine solution to form a trioctylselenium solution, and is added to the container B under a N2 atmosphere to form a precursor solution;
  • the Pb 1-x Sn x Se quantum dots in the Pb 1-x Sn x Se quantum dot reaction solution were centrifuged and precipitated with ethanol and redispersed in a hexane solution; the Pb 1-x Sn x Se quantum dots in the hexane solution were centrifuged again with an ethanol solution to obtain Pb 1-x Sn x Se quantum dots, and the Pb 1-x Sn x Se quantum dots were placed at room temperature for dry oxidation in a low oxygen concentration atmosphere;
  • step S316 Dispersing the Pb1 - xSnxSe quantum dots obtained in step S315 in an octane solution to obtain a Pb1-xSnxSe quantum dot-octane solution; dissolving lead iodide and ammonium acetate in a dimethylformamide solution and adding them to the Pb1 -xSnxSe quantum dot-octane solution in a volume ratio of 1:1; mixing and vibrating for a period of time until the Pb1 -xSnxSe quantum dots are transferred from the octane solution to the dimethylformamide solution to obtain a Pb1 -xSnxSe quantum dot dimethylformamide solution;
  • step S311 includes: weighing lead (II) acetate trihydrate and tin (II) acetate into container B, wherein the ratio of lead (II) acetate trihydrate to tin (II) acetate is 1:0.5-1; then adding oleic acid, diphenyl ether and trioctylphosphine into container B in a volume ratio of 1:1:1; and heating container B to dry at 70°C-90°C under vacuum.
  • step S312 includes: dissolving an appropriate amount of selenium powder in a trioctylphosphine solution to form a trioctylselenium solution, and adding the solution into container B under a N2 atmosphere to form a precursor solution.
  • step S316 includes: dispersing Pb1 -xSnxSe quantum dots in an octane solution to obtain a Pb1 -xSnxSe quantum dot-octane solution; dissolving lead iodide and ammonium acetate in 1 ml of dimethylformamide solution, and adding the mixture to the Pb1 -xSnxSe quantum dot-octane solution at a volume ratio of 1:1; vigorously vibrating the mixed solution for 1-2 minutes until the Pb1 -xSnxSe quantum dots are transferred from the octane to the dimethylformamide solution, then removing the supernatant and rinsing with octane multiple times to ensure complete transfer.
  • the sizes of the PbS quantum dots and Sn-doped PbSe quantum dots are determined according to the wavelength range that the detector needs to detect.
  • the present invention provides a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots, the Sn-doped PbSe quantum dots have the advantages of high and medium infrared response, and the method of the present invention can realize the preparation of a low-cost, chip-based, simple-process non-cooled PbSe mid-infrared focal plane detector.
  • FIG1 is a schematic flow chart of the method of the present invention.
  • FIG2 is a cross-sectional view of an electron scanning electron microscope of a mid-infrared focal plane detector of the present invention.
  • FIG3 is an actual device of a mid-infrared focal plane detector (64 x 64 pixel array) prepared by the method of the present invention.
  • This embodiment provides a method for synthesizing Sn-doped PbSe quantum dots (Pb 1-x Sn x Se quantum dots), which specifically includes the following steps:
  • Step 1 Weigh 1.5-3 mmol of lead(II) acetate trihydrate and 0.75-3 mmol of tin(II) acetate into flask A. Add oleic acid, diphenyl ether, and trioctylphosphine to flask A in a 1:1:1 volume ratio. Heat flask A under vacuum at 70°C-90°C for 1 hour.
  • Step 2 Dissolve 1.5-3 mmol of selenium powder in 1-2 mL of trioctylphosphine to form a trioctylselenium solution, and add it to flask A under a N2 atmosphere to form a precursor solution;
  • Step 3 Take 1 mL of diphenyl ether and place it in flask B and vacuum dry it at 70°C to 90°C for 1 hour. Then, continue to increase the temperature to 240°C to 250°C under N2 atmosphere.
  • Step 4 Quickly inject all the precursor solution in flask A into flask B. After reacting for 1 minute, place flask B in an ice water bath to quench the reaction and cool it to room temperature.
  • QDs quantum dots
  • Step 6 Pb1 -xSnxSe quantum dots are dispersed in a 15-25 mg/mL octane solution for liquid-phase iodination; 0.10-0.2 mol lead iodide and 0.04-0.1 mol ammonium acetate are dissolved in 1-2 mL dimethylformamide (DMF) solution and added to the above Pb1 -xSnxSe quantum dot-octane solution at a volume ratio of 1:1; the mixed solution of the two is vigorously shaken for 1-2 minutes until the Pb1 -xSnxSe quantum dots are transferred from the octane to the DMF solution, and then the supernatant is removed and the solution is rinsed with octane multiple times (3-4 times) to ensure complete transfer.
  • DMF dimethylformamide
  • Step 7 Pb 1-x Sn x Se quantum dots were obtained by centrifugal precipitation, washed with octane (3-4 times) to remove residual impurity ions, and redispersed in DMF solution (1-2 mL).
  • This embodiment provides a method for synthesizing PbS quantum dots, comprising the following steps:
  • Step 1 Weigh 0.3-1g of lead oxide into container C, then add 0.6-2mL of ODE and 0.6-2mL of OA, heat container C under vacuum at 100°C ⁇ 110°C for a period of time until the temperature rises to 140°C ⁇ 150°C.
  • Step 2 Inject bis(trimethylsilyl) sulfide (1 mL) diluted with 10 mL of ODE solution and react for 4 minutes to obtain a PbS reaction solution.
  • Step 3 PbS quantum dots were obtained by adding ethanol (volume ratio 1:3) to the PbS reaction solution and centrifuging to precipitate.
  • this embodiment provides a method for preparing a mid-infrared focal plane detector based on Sn-doped PbSe quantum dots, comprising the following steps:
  • Step 1 Au array bottom electrode (100 nm) was deposited on the ROIC substrate (64*64 pixel array) using photolithography and ion beam sputtering as the array bottom electrode.
  • Step 2 Prepare a PbS quantum dot hole transport layer on the array bottom electrode by spin coating
  • PbS quantum dots prepared in Example 2 were used to prepare a PbS quantum dot spin coating solution: PbS quantum dots were dispersed in a 25 to 35 mg/mL octane solution to obtain a PbS spin coating solution;
  • the PbS quantum dots were spin-coated on the bottom electrode of the array at 2000-3000 r/min to obtain a PbS quantum dot spin coating;
  • the PbS quantum dot coating layer spin-coated on the bottom electrode of the array was treated with a 0.1 mol EDT methanol solution (1 ml) for at least 40 seconds to allow ligand exchange, and then rinsed with methanol for at least 40 seconds;
  • step S24 Repeat step S23 to make the size of the PbS quantum dots reach 100 to 300 nm, thus completing the preparation of the PbS quantum dot hole transport layer.
  • Step 3 Prepare a Sn-doped PbSe quantum dot photosensitive layer on the PbS quantum dot hole transport layer by spin coating;
  • step S33 Repeat step S32 at least twice to make the size of the Sn-doped PbSe quantum dots reach 500-2000 nm, thereby completing the preparation of the Sn-doped PbSe quantum dot photosensitive layer.
  • Step 4 Use ion beam sputtering to prepare a 200-300 nm ZnO electron transport layer on the Sn-doped PbSe quantum dot photosensitive layer.
  • Step 5 Use ion beam sputtering to deposit a 200-800 nm ITO film as the top electrode on the ZnO electron transport layer to obtain a mid-infrared focal plane detector, as shown in Figures 2 and 3.
  • the mid-infrared focal plane detector is prepared on an ROIC substrate, and the PIN heterojunction of the Au bottom electrode, PbS hole transport layer, Sn-doped PbSe photosensitive layer, and ZnO electron transport layer is constructed in sequence by ion beam sputtering, spin coating, spin coating, and ion beam sputtering, and finally the ITO top electrode is evaporated by ion beam sputtering.
  • the present invention prepares a focal plane detector based on Sn-doped PbSe quantum dots.
  • the smaller size of PbSe quantum dots can effectively prevent the propagation of thermal noise.
  • the quantum dots have a band gap that changes with size, they can produce light-sensitive materials with different spectral responses.
  • the band gap of PbSe quantum dots is 4.7 ⁇ m, so PbSe quantum dots can achieve detection in the mid-infrared band.
  • the present invention based on the advantages of Sn-doped PbSe quantum dots with high and low infrared response, realizes the preparation of a low-cost, chip-based, and simple-to-process uncooled PbSe mid-infrared focal plane detector.
  • the reference terms “one embodiment”, “some embodiments”, “example”, “specific example”, or “some examples” mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention.
  • the schematic representations of the above terms do not necessarily refer to the same embodiment or example.
  • the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
  • those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法。中红外焦平面探测器的制备是在ROIC基底上，分别采用离子束溅射法，旋涂法，旋涂法，离子束溅射法依次构建了Au底电极，PbS空穴传输层，Sn掺杂的PbSe光敏层，ZnO电子传输层的PIN异质结，最终采用离子束溅射法蒸镀ITO顶电极构成。基于Sn掺杂的PbSe量子点具备高中红外响应的优势，且该方法能够实现低成本、芯片化、工艺简单的非制冷型PbSe中红外焦平面探测器的制备。

Description

一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法 技术领域
本发明涉及中红外焦平面探测器热成像技术领域，更具体地，涉及一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法。
背景技术
至今为止红外探测器已经经历了从第一代到第四代的发展，从单像素探测器逐渐发展为大面阵、小型化、低成本、双色以及多列阵的焦平面探测器。按照大气窗口透过的工作红外波长划分，可以将红外探测器划分为近红外探测器(1-3μm)，中红外探测器(3-5μm)和远红外探测器(8-10μm)。另外，根据探测器的使用温度不同，又可以将红外探测器分成制冷型和非制冷型探测器。制冷型探测器由于其探测率高，信噪比低而受到广泛应用，但由于其体积大(杜瓦瓶封装)以及能耗大(液氮循环制冷)也限制了进一步的发展。非制冷型探测器由于其芯片级尺寸，室温工作温度而受到民用市场青睐，按照其工作原理不同又可分为热敏型探测器和光子型探测器。其中，光子型探测器的响应速度要比热敏型探测器高1-2个数量级，因此在焦平面列阵的热成像方面具备较大的优势。
目前，国内外非制冷型光子型红外探测器已经实现近红外区(1-3μm)焦平面探测器阵列的突破并且实现了商品化应用，包括InGaAs探测器，GeSi探测器，PbS探测器等等。在中红外区(3-5μm)，国内仍然处于制冷型焦平面探测器阶段(CdHgTe探测器，InSb探测器，量子阱探测器)，在芯片级别中红外非制冷型焦平面探测器阵列仍然处于空白。近几年国外(西班牙公司)率先研发了芯片级非制冷型PbSe薄膜中远红外焦平面探测器，然而薄膜体相材料的热噪音会导致中红外焦平面探测器较高的暗电流，从而降低探测器的探测率。
从红外焦平面探测器的制备工艺上来说，目前已经实现商品化的探测器主要以Si COMS工艺制备的读出电路(ROIC)基底上倒接封装探测器工艺和直接薄膜生长工艺为主。前者主要由探测器薄膜铟柱和ROIC上面的铟柱实现倒接实现；后者则利用MOCVD或者MBE等薄膜生长技术直接在ROIC上面生长探测器薄膜。这两者工艺比较繁琐而且功能单一，对设备要求高，工艺成本高，可调控度差，材料尺寸大。
发明内容
本发明为克服上述现有技术中的缺陷，提供一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，制备工艺简单，且有效提高了探测器的探测效率。
为解决上述技术问题，本发明采用的技术方案是：
一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，包括以下步骤：
S1.应用光刻和离子束溅射法在ROIC基底上沉积Au阵列底电极作为阵列底电极；
S2.采用旋涂法在阵列底电极上制备PbS量子点空穴传输层；
S3.采用旋涂法在PbS量子点空穴传输层上制备Sn掺杂的PbSe量子点光敏层；
S4.采用离子束溅射法在Sn掺杂的PbSe量子点光敏层制备ZnO电子传输层的PIN异质结；
S5.采用离子束溅射法在ZnO电子传输层上沉积ITO薄膜作为顶电极，得到中红外焦平面探测器。
在本发明中，中红外焦平面探测器的制备是在ROIC基底上，分别采用离子束溅射法，旋涂法，旋涂法，离子束溅射法依次构建了Au底电极，PbS空穴传输层，Sn掺杂的PbSe光敏层，ZnO电子传输层的PIN异质结，最终采用离子束溅射法蒸镀ITO顶电极构成。
根据上述技术手段，本发明基于Sn掺杂的PbSe量子点制备焦平面探测器，PbSe量子点相对于PbSe薄膜而言，其较小的尺寸可以有效阻止热噪声的传播，量子点由于存在其带隙会随着尺寸的变化而改变，从而获得不同光谱响应的光敏感材料。而对于中红外波段而言，PbSe量子点的带隙是4.7μm，因此PbSe量子点可以实现对中红外波段探测；综上，本发明基于Sn掺杂的PbSe量子点具备高中红外响应的优势，实现了低成本、芯片化、艺简单的非制冷型PbSe中红外焦平面探测器的制备。
在其中一个实施例中，Sn掺杂的PbSe量子点和PbS量子点通过热注入法合成，其中Sn掺杂的PbSe量子点在合成之后应用室温氧化法和液相碘化法进行表面改性处理。
在其中一个实施例中，所述步骤S2包括：
S21.制备PbS量子点旋涂液；
S22.将PbS量子点旋涂液旋涂在阵列底电极上，得到PbS量子点旋涂层；
S23.用EDT的甲醇溶液处理旋涂在阵列底电极上的PbS量子点旋涂层以便进行配体交换，并用甲醇冲洗；
S24.重复步骤S23，以使PbS量子点的尺寸达到设定范围，至此完成PbS量子点空穴传输层的制备。
在其中一个实施例中，所述步骤S21包括：
S211.将氧化铅、与ODE溶液、OA溶液混合得到混合物，在真空环境下，将该混合物加热至140℃～150℃；
S212.加入用ODE溶液稀释的双硫化物溶液至步骤S211的混合物中，并反应一段时间， 得到PbS的反应液；
S213.在PbS的反应液中加入乙醇进行离心沉淀，得到PbS量子点，将PbS量子点重新分散到辛烷溶液中得到PbS量子点旋涂液。
在其中一个实施例中，所述步骤S211具体包括：称取适量氧化铅于容器A中，再在容器A中加入氧化铅重量2～3倍的ODE和OA溶液，将容器A在100℃～110℃下真空加热一段时间，待温度升至140℃～150℃。
在其中一个实施例中，所述步骤S3包括：
S31.制备Sn掺杂PbSe量子点二甲基甲酰胺溶液；
S32.将Sn掺杂PbSe量子点二甲基甲酰胺溶液在PbS量子点旋涂层旋涂一段时间后，用乙腈洗涤；
S33.重复步骤S32至少两次，以使Sn掺杂PbSe量子点的尺寸达到设定范围，至此完成Sn掺杂的PbSe量子点光敏层的制备。
在其中一个实施例中，所述步骤S31具体包括：
S311.将乙酸铅三水化合物、乙酸锡、油酸溶液、二苯醚溶液以及三辛基膦溶液加入容器B中混合，将容器B在真空环境下70℃～90℃进行加热干燥；
S312.将硒粉溶解于三辛基膦溶液中形成三辛基硒溶液，并在N2氛围下加入到容器B中形成前驱体溶液；
S313.取二苯醚溶液加入容器C中并在70℃～90℃下真空干燥一段时间；然后在N2氛围下继续将温度提高到240℃～250℃；
S314.将容器B中的前驱体溶液全部迅速加入到容器C中，反应一定时间后将容器C放置在冰水浴中淬灭，并冷却至室温，得到Pb1-xSnxSe量子点反应液，其中x＝0～0.11；
S315.用乙醇将Pb1-xSnxSe量子点反应溶液中的Pb1-xSnxSe量子点离心沉淀出来，并将其重新分散在己烷溶液中；再次用乙醇溶液将己烷溶液中的Pb1-xSnxSe量子点离心沉淀出来，得到Pb1-xSnxSe量子点，并将Pb1-xSnxSe量子点放置在室温下进行低氧浓度气氛下干燥氧化；
S316.将步骤S315得到的Pb1-xSnxSe量子点分散在辛烷溶液中，得到Pb1-xSnxSe量子点-辛烷溶液；将碘化铅和乙酸铵溶解在二甲基甲酰胺溶液中，并以1：1的体积比添加到Pb1-xSnxSe量子点-辛烷溶液中；混合振动一段时间，直到Pb1-xSnxSe量子点从辛烷溶液转移到二甲基甲酰胺溶液中，得到Pb1-xSnxSe量子点二甲基甲酰胺溶液；
S317.将Pb1-xSnxSe量子点二甲基甲酰胺溶液进行离心沉淀得到Pb1-xSnxSe量子点，用辛烷溶液冲洗Pb1-xSnxSe量子点去除残留杂质离子后，将Pb1-xSnxSe量子点冲洗分散在二甲基甲酰胺溶液中。
在其中一个实施例中，所述步骤S311包括：称取乙酸铅(II)三水合物和乙酸锡(II)于容器B中，其中乙酸铅(II)三水合物和乙酸锡(II)的比例为1:0.5～1；再在容器B中按照体积比1:1:1加入油酸、二苯醚和三辛基膦；将容器B在真空环境下70℃～90℃进行加热干燥。
在其中一个实施例中，所述步骤S312包括：将适量的硒粉溶解于的三辛基膦溶液中形成三辛基硒溶液，并在N2氛围下加入到容器B中形成前驱体溶液。
在其中一个实施例中，所述步骤S316包括：将Pb1-xSnxSe量子点分散在辛烷溶液中，得到Pb1-xSnxSe量子点-辛烷溶液；将碘化铅和乙酸铵溶解在1ml的二甲基甲酰胺溶液中，并以1:1的体积比添加到Pb1-xSnxSe量子点-辛烷溶液中；将两者的混合溶液剧烈振动1-2分钟，直到Pb1-xSnxSe量子点从辛烷转移到二甲基甲酰胺溶液溶液，接着去掉上清液并用辛烷多次冲洗确保完全转移。
其中，所述PbS量子点、Sn掺杂PbSe量子点的尺寸根据探测器所需探测的波长范围进行确定。
与现有技术相比，有益效果是：本发明提供的一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，基于Sn掺杂的PbSe量子点具备高中红外响应的优势，且本发明的方法能够实现低成本、芯片化、工艺简单的非制冷型PbSe中红外焦平面探测器的制备。
附图说明
图1是本发明的方法流程示意图。
图2是本发明中红外焦平面探测器电子扫描电镜截面图。
图3是通过本发明的方法制备的中红外焦平面探测器实际器件(64x 64像素列阵)。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明的一部分实施例，而不是全部的实施例。下面结合具体实施方式对本发明作在其中一个实施例中说明。其中，附图仅用于示例性说明，表示的仅是示意图，而非实物图，不能理解为对本专利的限制；为了更好地说明本发明的实施例，附图某些部件会有省略、放大或缩小，并不代表实际产品的尺寸；对本领域技术人员来说，附图中某些公知结构及其说明可能省略是可以理解的。
在本发明的描述中，需要理解的是，若有术语“上”、“下”、“左”、“右”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此附图中描述位置关系的用语仅用于示例性说明，不能理解为对本专利的限制，对于本领域的普通技 术人员而言，可以根据具体情况理解上述术语的具体含义。另外，若本发明实施例中有涉及“第一”、“第二”等的描述，则该“第一”、“第二”等的描述仅用于描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，全文中出现的“和/或”的含义为，包括三个并列的方案，以“A和/或B”为例，包括A方案，或B方案，或A和B同时满足的方案。
实施例1：
本实施例提供了一种掺杂Sn的PbSe量子点(Pb1-xSnxSe量子点)的合成方法，具体包括以下步骤：
步骤1：称取1.5～3mmol乙酸铅(II)三水合物和0.75～3mmol乙酸锡(II)于A烧瓶中、再往A烧瓶中加入油酸、二苯醚和、三辛基膦，体积比1：1：1。A烧瓶在真空条件下70℃～90℃加热干燥1小时。
步骤2：将1.5～3mmol硒粉溶解于1～2mL三辛基膦形成三辛基硒溶液，并在N2氛围下加入到A烧瓶中形成前驱体溶液；
步骤3：取1mL二苯醚于B烧瓶在70℃～90℃下真空干燥1小时，并在N2氛围下继续将温度提高到240℃～250℃。
步骤4：将A烧瓶前体溶液全部迅速注入上B烧瓶中，反应1min后将B烧瓶放置于在冰水浴中淬灭，并冷却至室温后。
步骤5：用乙醇(体积比2:1)将反应溶液中的Pb1-xSnxSe(x＝0-0.11)量子点离心沉淀出来，并将其重新分散在己烷中。再次用同样的方法进行再沉淀操作，最后将Pb1-xSnxSe量子点放置在室温下置于低氧浓度(10ppm)气氛下干燥氧化两天。
步骤6：将Pb1-xSnxSe量子点分散在15～25mg/mL辛烷溶液中进行液相碘化；通过将0.10～0.2mol碘化铅和0.04～0.1mol乙酸铵溶解在1～2mL二甲基甲酰胺溶液(DMF)，并以1:1的体积比添加到上述Pb1-xSnxSe量子点—辛烷溶液中；两者的混合溶液剧烈振动1-2分钟，直到Pb1-xSnxSe量子点从辛烷转移到DMF溶液，接着去掉上清液并用辛烷多次冲洗(3-4次)确保完全转移。
步骤7：通过离心沉淀得到Pb1-xSnxSe量子点，用辛烷冲洗(3-4次)去除残留杂质离子，并重新分散在DMF溶液(1～2mL)。
实施例2
本实施例提供一种PbS量子点的合成方法，包括以下步骤：
步骤1：称取0.3～1g氧化铅于容器C中，再在容器C中加入0.6～2mL ODE和0.6～2mL  OA，将容器C在100℃～110℃下真空加热一段时间，待温度升至140℃～150℃。
步骤2：将用10mL ODE溶液稀释的双(三甲基甲硅烷基)硫化物(1mL)注入并反应4分钟，得到PbS的反应液。
步骤3：通过在PbS的反应液中添加乙醇(体积比1:3)离心沉淀，得到PbS量子点。
实施例3
如图1和图2所示，本实施例提供一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，包括以下步骤：
步骤1：应用光刻和离子束溅射法在ROIC基底(64*64像素阵列)上沉积Au阵列底电极(100nm)作为阵列底电极。
步骤2：采用旋涂法在阵列底电极上制备PbS量子点空穴传输层；
S21.采用实施例2制备的PbS量子点制备PbS量子点旋涂液：将PbS量子点分散到25～35mg/mL辛烷溶液中得到PbS旋涂液；
S22.将PbS量子点旋涂以2000～3000r/min液旋涂在阵列底电极上，得到PbS量子点旋涂层；
S23.用0.1molEDT的甲醇溶液(1ml)处理旋涂在阵列底电极上的PbS量子点旋涂层，至少处理40秒，以便进行配体交换，并用甲醇冲洗至少40秒；
S24.重复步骤S23，以使PbS量子点的尺寸达到100～300nm，至此完成PbS量子点空穴传输层的制备。
步骤3：采用旋涂法在PbS量子点空穴传输层上制备Sn掺杂的PbSe量子点光敏层；
S31.采用实施例1所制备的Sn掺杂PbSe量子点二甲基甲酰胺溶液；
S32.将Sn掺杂PbSe量子点二甲基甲酰胺溶液以2000～3000r.p.m.在PbS量子点旋涂层旋涂40秒后，用乙腈洗涤；
S33.重复步骤S32至少两次，以使Sn掺杂PbSe量子点的尺寸达到500-2000nm，至此完成Sn掺杂的PbSe量子点光敏层的制备。
步骤4：采用离子束溅射法在Sn掺杂的PbSe量子点光敏层制备200～300nm ZnO电子传输层。
步骤5：采用离子束溅射法在ZnO电子传输层上沉积200～800nm ITO薄膜作为顶电极，得到中红外焦平面探测器，如图2、图3所示。
在本发明中，中红外焦平面探测器的制备是在ROIC基底上，分别采用离子束溅射法，旋涂法，旋涂法，离子束溅射法依次构建了Au底电极，PbS空穴传输层，Sn掺杂的PbSe光敏层，ZnO电子传输层的PIN异质结，最终采用离子束溅射法蒸镀ITO顶电极构成。
根据上述技术手段，本发明基于Sn掺杂的PbSe量子点制备焦平面探测器，PbSe量子点相对于PbSe薄膜而言，其较小的尺寸可以有效阻止热噪声的传播，量子点由于存在其带隙会随着尺寸的变化而改变，从而获得不同光谱响应的光敏感材料。而对于中红外波段而言，PbSe量子点的带隙是4.7μm，因此PbSe量子点可以实现对中红外波段探测；综上，本发明基于Sn掺杂的PbSe量子点具备高中红外响应的优势，实现了低成本、芯片化、艺简单的非制冷型PbSe中红外焦平面探测器的制备。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
显然，本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (10)

  1. 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，包括以下步骤：
    S1.应用光刻和离子束溅射法在ROIC基底上沉积Au阵列底电极作为阵列底电极；
    S2.采用旋涂法在阵列底电极上制备PbS量子点空穴传输层；
    S3.采用旋涂法在PbS量子点空穴传输层上制备Sn掺杂的PbSe量子点光敏层；
    S4.采用离子束溅射法在Sn掺杂的PbSe量子点光敏层制备ZnO电子传输层的PIN异质结；
    S5.采用离子束溅射法在ZnO电子传输层上沉积ITO薄膜作为顶电极，得到中红外焦平面探测器。
  2. 根据权利要求1所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，Sn掺杂的PbSe量子点和PbS量子点通过热注入法合成，其中Sn掺杂的PbSe量子点在合成之后应用室温氧化法和液相碘化法进行表面改性处理。
  3. 根据权利要求2所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述步骤S2包括：
    S21.制备PbS量子点旋涂液；
    S22.将PbS量子点旋涂液旋涂在阵列底电极上，得到PbS量子点旋涂层；
    S23.用EDT的甲醇溶液处理旋涂在阵列底电极上的PbS量子点旋涂层以便进行配体交换，并用甲醇冲洗；
    S24.重复步骤S23，以使PbS量子点的尺寸达到设定范围，至此完成PbS量子点空穴传输层的制备。
  4. 根据权利要求3所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述步骤S21包括：
    S211.将氧化铅、与ODE溶液、OA溶液混合得到混合物，在真空环境下，将该混合物加热至140℃～150℃；
    S212.加入用ODE溶液稀释的双硫化物溶液至步骤S211的混合物中，并反应一段时间，得到PbS的反应液；
    S213.在PbS的反应液中加入乙醇进行离心沉淀，得到PbS量子点，将PbS量子点重新分散到辛烷溶液中得到PbS量子点旋涂液。
  5. 根据权利要求4所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法， 其特征在于，所述步骤S211具体包括：称取适量氧化铅于容器A中，再在容器A中加入氧化铅重量2～3倍的ODE和OA溶液，将容器A在100℃～110℃下真空加热一段时间，待温度升至140℃～150℃。
  6. 根据权利要求2所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述步骤S3包括：
    S31.制备Sn掺杂PbSe量子点二甲基甲酰胺溶液；
    S32.将Sn掺杂PbSe量子点二甲基甲酰胺溶液在PbS量子点旋涂层旋涂一段时间后，用乙腈洗涤；
    S33.重复步骤S32至少两次，以使Sn掺杂PbSe量子点的尺寸达到设定范围，至此完成Sn掺杂的PbSe量子点光敏层的制备。
  7. 根据权利要求6所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述步骤S31具体包括：
    S311.将乙酸铅三水化合物、乙酸锡、油酸溶液、二苯醚溶液以及三辛基膦溶液加入容器B中混合，将容器B在真空环境下70℃～90℃进行加热干燥；
    S312.将硒粉溶解于三辛基膦溶液中形成三辛基硒溶液，并在N2氛围下加入到容器B中形成前驱体溶液；
    S313.取二苯醚溶液加入容器C中并在70℃～90℃下真空干燥一段时间；然后在N2氛围下继续将温度提高到240℃～250℃；
    S314.将容器B中的前驱体溶液全部迅速加入到容器C中，反应一定时间后将容器C放置在冰水浴中淬灭，并冷却至室温，得到Pb1-xSnxSe量子点反应液，其中x＝0～0.11；
    S315.用乙醇将Pb1-xSnxSe量子点反应溶液中的Pb1-xSnxSe量子点离心沉淀出来，并将其重新分散在己烷溶液中；再次用乙醇溶液将己烷溶液中的Pb1-xSnxSe量子点离心沉淀出来，得到Pb1-xSnxSe量子点，并将Pb1-xSnxSe量子点放置在室温下进行低氧浓度气氛下干燥氧化；
    S316.将步骤S315得到的Pb1-xSnxSe量子点分散在辛烷溶液中，得到Pb1-xSnxSe量子点-辛烷溶液；将碘化铅和乙酸铵溶解在二甲基甲酰胺溶液中，并以1：1的体积比添加到Pb1-xSnxSe量子点-辛烷溶液中；混合振动一段时间，直到Pb1-xSnxSe量子点从辛烷溶液转移到二甲基甲酰胺溶液中，得到Pb1-xSnxSe量子点二甲基甲酰胺溶液；
    S317.将Pb1-xSnxSe量子点二甲基甲酰胺溶液进行离心沉淀得到Pb1-xSnxSe量子点，用辛烷溶液冲洗Pb1-xSnxSe量子点去除残留杂质离子后，将Pb1-xSnxSe量子点冲洗分散在二甲基甲酰胺溶液中。
  8. 根据权利要求7所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法， 其特征在于，所述步骤S311包括：称取乙酸铅(II)三水合物和乙酸锡(II)于容器B中，其中乙酸铅(II)三水合物和乙酸锡(II)的物质的量之比为1:0.5～1；再在容器B中按照体积比1:1:1加入油酸、二苯醚和三辛基膦；将容器B在真空环境下70℃～90℃进行加热干燥。
  9. 根据权利要求8所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述步骤S312包括：将适量的硒粉溶解于三辛基膦溶液中形成三辛基硒溶液，并在N2氛围下加入到容器B中形成前驱体溶液。
  10. 根据权利要求9所述的基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法，其特征在于，所述PbS量子点、Sn掺杂PbSe量子点的尺寸根据探测器所需探测的波长范围进行确定。
PCT/CN2024/104409 2024-04-09 2024-07-09 一种基于Sn掺杂PBSE量子点的中红外焦平面探测器制备方法 Pending WO2025213600A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US19/409,769 US20260090178A1 (en) 2024-04-09 2025-12-05 METHOD FOR PREPARING MID-INFRARED FOCAL PLANE DETECTOR BASED ON Sn-DOPED PbSe QUANTUM DOTS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202410422689.0 2024-04-09
CN202410422689.0A CN118039713B (zh) 2024-04-09 2024-04-09 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US19/409,769 Continuation US20260090178A1 (en) 2024-04-09 2025-12-05 METHOD FOR PREPARING MID-INFRARED FOCAL PLANE DETECTOR BASED ON Sn-DOPED PbSe QUANTUM DOTS

Publications (1)

Publication Number Publication Date
WO2025213600A1 true WO2025213600A1 (zh) 2025-10-16

Family

ID=90989534

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/104409 Pending WO2025213600A1 (zh) 2024-04-09 2024-07-09 一种基于Sn掺杂PBSE量子点的中红外焦平面探测器制备方法

Country Status (3)

Country Link
US (1) US20260090178A1 (zh)
CN (1) CN118039713B (zh)
WO (1) WO2025213600A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118039713B (zh) * 2024-04-09 2024-08-02 中山大学 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160211392A1 (en) * 2013-08-29 2016-07-21 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
US20220077238A1 (en) * 2019-07-01 2022-03-10 Fujifilm Corporation Photodetector element and image sensor
CN115074130A (zh) * 2022-05-31 2022-09-20 北京理工大学 一种长波长合金化PbxSn1-xSe量子点及其制备方法、应用
CN116864556A (zh) * 2023-08-16 2023-10-10 长春理工大学 基于PbSe胶体量子点的红外光电探测器及其制备方法
CN118039713A (zh) * 2024-04-09 2024-05-14 中山大学 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014501680A (ja) * 2010-10-26 2014-01-23 カリフォルニア インスティテュート オブ テクノロジー 高い熱電性能を有する高濃度にドープされたＰｂＳｅ
CN103733355B (zh) * 2011-06-30 2017-02-08 佛罗里达大学研究基金会有限公司 用于检测红外辐射的带有增益的方法和设备
CN109880624B (zh) * 2019-04-18 2020-07-10 武汉理工大学 超小型PbSe量子点的制备方法
CN116119709A (zh) * 2023-03-16 2023-05-16 南昌航空大学 一种红光发射高稳定锰掺杂铯铅溴碘钙钛矿量子点的制备方法
CN117497632A (zh) * 2023-11-17 2024-02-02 复旦大学 基于MXene透明电极的红外量子点光电探测器及其制备和应用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160211392A1 (en) * 2013-08-29 2016-07-21 University Of Florida Research Foundation, Inc. Air stable infrared photodetectors from solution-processed inorganic semiconductors
US20220077238A1 (en) * 2019-07-01 2022-03-10 Fujifilm Corporation Photodetector element and image sensor
CN115074130A (zh) * 2022-05-31 2022-09-20 北京理工大学 一种长波长合金化PbxSn1-xSe量子点及其制备方法、应用
CN116864556A (zh) * 2023-08-16 2023-10-10 长春理工大学 基于PbSe胶体量子点的红外光电探测器及其制备方法
CN118039713A (zh) * 2024-04-09 2024-05-14 中山大学 一种基于Sn掺杂PbSe量子点的中红外焦平面探测器制备方法

Also Published As

Publication number Publication date
CN118039713A (zh) 2024-05-14
CN118039713B (zh) 2024-08-02
US20260090178A1 (en) 2026-03-26

Similar Documents

Publication Publication Date Title
Fu et al. TexSe1–x photodiode shortwave infrared detection and imaging
Li et al. Circularly polarized light-dependent pyro-phototronic effect from 2D chiral–polar double perovskites
Shen Comparison and competition between MCT and QW structure material for use in IR detectors
Qin et al. Mercury telluride colloidal quantum-dot focal plane array with planar pn junctions enabled by in situ electric field–activated doping
Graddage et al. Near-infrared-II photodetectors based on silver selenide quantum dots on mesoporous TiO2 scaffolds
CN114220920A (zh) 一种量子点红外探测器及其制备方法
CN114702960B (zh) 红外量子点层及其制备方法、红外探测器及其制备方法
CN112071989B (zh) 一种基于钙钛矿单晶的x射线探测器及其制备方法
US20260090178A1 (en) METHOD FOR PREPARING MID-INFRARED FOCAL PLANE DETECTOR BASED ON Sn-DOPED PbSe QUANTUM DOTS
CN110718633A (zh) 一种基于钙钛矿-碳纳米管体异质结的宽谱光电探测器
CN116113246B (zh) 硅纳米线阵列的双异质结自驱动光电探测器及制备方法
Peng et al. Te x Se1–x Shortwave Infrared Photodiode Arrays with Monolithic Integration
CN115132769A (zh) 非倒装键合体式捕获型胶体量子点短波红外焦平面阵列器及其制备方法与应用
CN114551632A (zh) 一种二维碲和过渡金属硫化物的pn结型自驱动光电探测器及其制备方法
CN106847988B (zh) 基于平板显示tft基板的大面积红外探测器件及其驱动方法
Li et al. Advances in PbX (X= S, Se, Te) Quantum‐Dot Photodetectors
CN116904197A (zh) 红外量子点、红外器件及其制备方法
CN115188889A (zh) 非倒装键合体式双波段量子点像元、焦平面阵列及其制备方法与应用
WO2026081789A1 (zh) 一种具有高像元密度的薄膜器件、感光装置及显示装置
CN114695678B (zh) 一种有效抑制倒置结构的有机光电探测器内暗电流的方法
Chen et al. Tin‐Lead‐Selenide Nanocrystals for Sensitive Uncooled Mid‐Infrared Focal Plane Array Imager with Monolithic Readout Integration
CN118317614A (zh) 一种基于微异质结核壳胶体量子点的可见-红外探测器及其制备方法和应用
CN113013282A (zh) 高响应PbSe/C60异质结光敏薄膜红外探测芯片及其制备方法、红外探测器
CN118198181A (zh) 一种硒化铅光电导探测器及其制备方法
CN118299442A (zh) 量子点光导型光电探测器及其制备方法