WO2025002165A1 - 半导体工艺设备及其晶圆位置获取、校准装置和方法 - Google Patents

半导体工艺设备及其晶圆位置获取、校准装置和方法 Download PDF

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Publication number
WO2025002165A1
WO2025002165A1 PCT/CN2024/101547 CN2024101547W WO2025002165A1 WO 2025002165 A1 WO2025002165 A1 WO 2025002165A1 CN 2024101547 W CN2024101547 W CN 2024101547W WO 2025002165 A1 WO2025002165 A1 WO 2025002165A1
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WIPO (PCT)
Prior art keywords
wafer
light beam
information
position information
annular light
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Ceased
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PCT/CN2024/101547
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English (en)
French (fr)
Inventor
孙红彬
侯朋飞
王松涛
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020257035157A priority Critical patent/KR20250167004A/ko
Publication of WO2025002165A1 publication Critical patent/WO2025002165A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Definitions

  • the present application belongs to the field of semiconductor process technology, and in particular, relates to a semiconductor process equipment and a wafer position acquisition, calibration device and method thereof.
  • the wafer is formed from a single crystal silicon rod through a multi-step process, one of which is to use a chamfering mechanism to form a notch (i.e., Notch, also known as a V-groove) on the wafer.
  • Notch also known as a V-groove
  • the national standard stipulates that the depth of the Notch is 1mm and the angle is 90°. It is a concave structure with a certain angle and depth.
  • the function of the Notch on the wafer is to identify the crystallization direction of the wafer to ensure the consistency of the direction in the entire subsequent process.
  • the mainstream wafer position calibration device is based on single-point detection by laser, and a simple schematic diagram thereof is shown in FIG1, wherein 1 represents the mechanical support mechanism for wafer calibration, 2 represents the laser emission component, 3 represents the laser detection component, 4 represents the motion mechanism, and 5 represents the wafer.
  • the existing method rotates the wafer 5 by the motion mechanism 4, and the laser detection component 3 obtains the position data of a single point during the rotation of the wafer 5, and then infers the shape of the wafer 5 by the time and the speed of the motion mechanism 4, and then confirms the center of mass position of the wafer 5 according to the inferred shape, and then adjusts the position of the wafer 5 by the motion mechanism 4.
  • the embodiments of the present application provide a semiconductor process equipment and a wafer position acquisition, calibration device and method thereof, aiming to solve the technical problem that the wafer position calibration device in the prior art consumes a lot of time when performing wafer position calibration.
  • an embodiment of the present application provides a wafer position acquisition device, which is applied in a semiconductor process equipment, and the wafer position acquisition device includes:
  • a supporting base comprising a wafer supporting surface, wherein the wafer supporting surface is used to support the wafer;
  • a light emitting component located just above the wafer carrying surface, for emitting an annular light beam to the wafer on the wafer carrying surface so that the edge of the wafer falls within the irradiation range of the annular light beam;
  • the optical detection component includes an optical detector array distributed below the wafer carrying surface, and is used to obtain the contour information of the wafer by receiving the irradiation of the annular light beam, and the contour information is used to indicate the position information of the wafer.
  • the axicon is located on the irradiation path of the collimated light beam, and is used for converting the collimated light beam into the annular light beam, and making the width of the annular light beam be half of the predetermined diameter.
  • the diameter of the wafer is larger than the inner ring diameter of the annular light beam and smaller than the outer ring diameter of the annular light beam.
  • the wafer position acquisition device further includes a liftable bracket for supporting and fixing the light emitting assembly so that the light emitting assembly is positioned on the wafer on the wafer carrying surface.
  • the vertical distance is adjustable.
  • an embodiment of the present application provides a wafer position calibration device, which is used in semiconductor process equipment.
  • the wafer position calibration system includes a controller, a moving mechanism, and the above-mentioned wafer position acquisition device; wherein,
  • the controller is used to obtain the position information of the wafer according to the contour information of the wafer obtained by the wafer position acquisition device; and control the movement mechanism to operate according to the position information so that the wafer moves to the target position.
  • the moving mechanism includes a rotating mechanism and a translating mechanism; the rotating mechanism is used to drive the supporting base to rotate; the translating mechanism is used to drive the wafer on the wafer supporting surface to translate relative to the wafer supporting surface;
  • the controller is used to control the rotating mechanism to drive the supporting base to rotate according to the position information so as to drive the wafer to rotate to the target position; and is used to control the translation mechanism to drive the wafer to translate to the target position according to the position information.
  • the controller is used to obtain the position information of the wafer according to the contour information of the wafer obtained by the wafer position acquisition device, including:
  • the controller is used to fit the shape curve of the wafer according to the contour information of the wafer, and determine whether the shape curve of the wafer is complete;
  • the controller is used to determine the position information of the wafer according to the outer shape curve of the wafer when it is determined that the outer shape curve of the wafer is complete.
  • the controller is used to determine the position information of the wafer according to the outer shape curve of the wafer, including:
  • the controller is used to determine the notch direction and the centroid position of the wafer according to the outer shape curve of the wafer;
  • the controller is used to determine the position information of the wafer according to the center of mass position of the wafer and the notch direction of the wafer.
  • an embodiment of the present application provides a semiconductor process equipment, including a process chamber and a wafer temporary storage chamber connected to the process chamber, wherein the above-mentioned wafer position acquisition device or the above-mentioned wafer position calibration device is installed in the wafer temporary storage chamber.
  • an embodiment of the present application provides a wafer position calibration method, comprising the following steps:
  • the wafer is controlled to move to a target position.
  • the step of obtaining the position information of the wafer according to the contour information of the wafer includes:
  • the position information of the wafer is determined according to the outer shape curve of the wafer.
  • the step of determining the position information of the wafer according to the outer shape curve of the wafer includes:
  • the position information of the wafer is determined according to the centroid position of the wafer and the notch direction of the wafer.
  • the step of controlling the wafer to move to a target position according to the position information of the wafer includes:
  • the wafer carrying surface is controlled to drive the wafer to rotate.
  • the notch direction of the wafer is directed toward the target orientation.
  • the light detection component of the wafer position acquisition device since the light emitting component of the wafer position acquisition device can emit an annular light beam to the wafer on the wafer bearing surface, and make the edge of the wafer fall into the irradiation range of the annular light beam, at the same time, the light detection component of the wafer position acquisition device includes a light detector array distributed below the wafer bearing surface, which can receive the irradiation of the annular light beam to obtain the contour information of the wafer, and the contour information can indicate the position information of the wafer (including the notch direction and the center of mass position of the wafer).
  • the controller of the wafer position calibration device can obtain the position information of the wafer according to the contour information of the wafer, and control the mobile mechanism to work according to the position information of the wafer, so that the wafer moves to the target position to realize the position calibration of the wafer. It can be seen that in the present technical solution, in the confirmation process of the entire wafer position information, only one irradiation detection is needed to complete the confirmation of the entire wafer position information. At the same time, the wafer does not need to perform any movement including rotation in the confirmation process of the entire position information. It only needs to move to the target position once through the mobile mechanism after the confirmation of the position information. Therefore, the wafer calibration time can be greatly saved.
  • FIG. 1 is a schematic diagram of the operation of a wafer position calibration device in the prior art.
  • FIG. 2 is a schematic diagram of the operation of the wafer position calibration device provided in an embodiment of the present application.
  • FIG. 3 is a diagram showing the working principle of the wafer position calibration device shown in FIG. 2 .
  • FIG. 4 is a flowchart of a wafer position calibration method provided in an embodiment of the present application.
  • FIG. 5 is a flowchart of step S130 of the wafer position calibration method shown in FIG. 4 .
  • FIG. 6 is a flowchart of step S140 of the wafer position calibration method shown in FIG. 4 .
  • the wafer is formed from a single crystal silicon rod through many processes, one of which is to use a chamfering mechanism to form a notch (i.e., Notch, also known as a V-groove) on the wafer.
  • Notch also known as a V-groove
  • the national standard stipulates that the depth of the Notch is 1mm and the angle is 90°. It is a concave structure with a certain angle and depth.
  • the function of the Notch on the wafer is to identify the crystallization direction of the wafer to ensure the consistency of the direction in the entire set of subsequent processes.
  • the mainstream wafer position calibration device is based on single-point detection by laser, and its simple schematic diagram is shown in Figure 1, where 1 represents the mechanical support mechanism for wafer calibration, 2 represents the laser emission component, 3 represents the laser detection component, 4 represents the motion mechanism, and 5 represents the wafer.
  • the existing method drives the wafer 5 to rotate through the motion mechanism 4, and the laser detection component 3 obtains the position data of a single point during the rotation of the wafer 5, and then infers the shape of the wafer 5 through time and the speed of the motion mechanism 4, and then confirms the center of mass position of the wafer 5 based on the inferred shape, and then adjusts the position of the wafer 5 through the motion mechanism 4.
  • the existing wafer positioning device rotates the wafer 5 through the motion mechanism 4, and then infers the shape of the wafer 5 from the position data obtained at the laser detection component 3, which causes the accuracy of this method to strongly rely on the accuracy of the time and speed information of the movement, and thus easily causes errors in the calculation of the center of mass of the wafer 5, resulting in the need for the wafer 5 to rotate multiple times to continuously correct the center of mass information.
  • the confirmation of the center of mass of the wafer 5 and the confirmation of the Notch 51 of the wafer 5 are performed twice, all of which greatly increase the wafer calibration time.
  • the invention solves the technical problem that the wafer position calibration device in the prior art consumes a lot of time when calibrating the wafer position.
  • the embodiment of the present application provides a semiconductor process equipment, which includes a process chamber (not shown) and a wafer temporary storage chamber (not shown) connected to the process chamber, and a wafer position calibration device or a wafer position acquisition device 100 is installed in the wafer temporary storage chamber.
  • the wafer position calibration device may specifically include a controller (not shown), a moving mechanism (not shown) and a wafer position acquisition device 100.
  • the wafer position acquisition device 100 may specifically include a bearing base 110, a light emitting component 120 and a light detection component 130.
  • the bearing base 110 may specifically include a wafer bearing surface, and the wafer bearing surface is used to bear a wafer 200.
  • the light emitting component 120 is located directly above the wafer bearing surface, and is used to emit an annular light beam to the wafer 200 on the wafer bearing surface, so that the edge of the wafer 200 falls into the irradiation range of the annular light beam.
  • the optical detection assembly 130 may specifically include an array of optical detectors distributed below the wafer carrying surface, which is used to obtain the contour information of the wafer 200 by receiving the irradiation of the annular light beam, and the contour information is used to indicate the position information of the wafer 200.
  • the above-mentioned controller is used to obtain the position information of the wafer 200 according to the contour information of the wafer 200 obtained by the wafer position acquisition device 100; and control the movement mechanism to work according to the position information, so that the wafer 200 moves to the target position to achieve the position calibration of the wafer 200.
  • the position information may include the notch position (i.e., notch direction) of the wafer 200 and the position of the wafer 200 on the wafer carrying surface; the target position may include the position to which the notch of the wafer 200 needs to be rotated and the position of the wafer 200 needed to be on the wafer carrying surface.
  • the wafer carrying surface on the supporting base 110 for carrying the wafer 200 should be slightly smaller than the size of the smallest wafer, so that when a wafer 200 of any size greater than or equal to the smallest wafer is carried on the wafer carrying surface, the wafer carrying surface can be completely covered.
  • the coverage range of the light detector array should be much larger than the size of the wafer 200, and is mainly set within a certain size range below the wafer carrying surface, and no corresponding light detector may be set directly below the wafer carrying surface, that is, the light detector array is distributed in the area outside the area directly below the wafer carrying surface, so as to ensure that when the edge of the wafer 200 falls into the irradiation range of the annular light beam, a part of the annular light beam irradiates the wafer 200. The other part of the annular light beam is irradiated on the light detector array along the edge, so that the light detector array can detect and obtain the contour information of the wafer 200.
  • the controller can obtain the position information of the wafer 200 according to the contour information, and the position information can specifically include the center of mass of the wafer 200 and the notch direction of the notch 210 of the wafer 200.
  • the detailed detection process will be further described in detail in the method embodiment below, and will not be repeated here.
  • the photodetector array can be directly distributed in a matrix on the upper surface of the support platform 140 of the entire device, or distributed in a ring array on the upper surface of the support platform 140 of the entire device.
  • the height difference between the wafer bearing surface of the supporting base 110 and the upper surface should be as small as possible, so that the surface of the wafer 200 and the surface of the photodetector array are as close to being on the same horizontal plane as possible.
  • the photodetector array can specifically be a charge-coupled device (CCD) matrix.
  • the light emitting component 120 of the wafer position acquisition device 100 can emit an annular light beam to the wafer 200 on the wafer carrying surface, and make the edge of the wafer 200 fall into the irradiation range of the annular light beam, at the same time, the light detection component 130 of the wafer position acquisition device 100 includes a light detector array distributed below the wafer carrying surface, which can receive the irradiation of the annular light beam to obtain the contour information of the wafer, and the contour information can indicate the position information of the wafer 200 (including the notch direction and the center of mass position of the wafer 200).
  • the light emitting assembly 120 may specifically include a collimated light source 121 and an aconical lens 122, wherein the collimated light source 121 is used to face the center of the wafer bearing surface and emit a collimated light beam of a predetermined diameter d1, and the collimated light beam may be, for example, a laser beam.
  • the collimated light source 121 can be, for example, a laser
  • the conical lens 122 can be, for example, a conical lens.
  • the diameter of the wafer 200 should be greater than the inner ring diameter d3 of the annular beam and less than the outer ring diameter d4 of the annular beam.
  • the width d2 of the annular beam also determines the standard value (spec value) of the calibration of the wafer calibration device 100.
  • the standard value can be specifically equal to half of the width d2 of the annular beam.
  • n is the refractive index of the aconic lens 122, which is related to the material of the aconic lens 122. Due to this optical characteristic, the position calibration of wafers 200 of different sizes can be achieved by adjusting the height L.
  • the wafer position acquisition device 100 also includes a liftable bracket 150 for supporting and fixing the light emitting component 120, so that the vertical distance from the light emitting component 120 to the wafer 200 on the wafer supporting surface is adjustable, and then by changing the above-mentioned height L, different outer ring diameters d4 of the annular light beam are formed to correspond to the position calibration of wafers 200 of different sizes.
  • the laser beam diameter is 20 mm.
  • the wafer position calibration device can be compatible with the position calibration of wafers of different sizes without changing the calibration equipment.
  • the above-mentioned moving mechanism may specifically include a rotating mechanism and a translation mechanism.
  • the rotating mechanism can be used to drive the supporting base 110 to rotate, that is, the rotating mechanism can directly act on the supporting base 110, so that its wafer supporting surface drives the wafer 200 on the wafer supporting surface to rotate, so that the notch direction of the wafer 200 is toward the target direction.
  • the rotating mechanism can be, for example, a motor.
  • the translation mechanism can be used to drive the wafer 200 on the wafer supporting surface to translate relative to the wafer supporting surface, that is, the translation mechanism directly acts on the wafer 200 on the wafer supporting surface.
  • it can be a manipulator arranged above the wafer supporting surface to directly grab the wafer 200 on the wafer supporting surface, so that the wafer 200 translates relative to the wafer supporting surface, so that the center of mass position of the wafer 200 coincides with the center point position of the wafer supporting surface. It can also be a power mechanism arranged below the wafer supporting surface, which can support the edge of the wafer 200 through a plurality of lifting pins to drive the wafer 200 to translate relative to the wafer supporting surface.
  • the controller is used to control the rotation mechanism to drive the supporting base 110 to rotate according to the position information (i.e., the notch direction of the wafer 200) so as to drive the wafer 200 to rotate to the target position (i.e., the target notch direction); and to control the translation mechanism to drive the wafer 200 to translate to the target position (i.e., the target center of mass position) according to the position information (i.e., the center of mass position of the wafer 200).
  • the position information i.e., the notch direction of the wafer 200
  • the target position i.e., the target notch direction
  • the translation mechanism to drive the wafer 200 to translate to the target position (i.e., the target center of mass position) according to the position information (i.e., the center of mass position of the wafer 200).
  • the present application also separately provides a wafer position acquisition device for semiconductor process equipment.
  • the structure and function of the wafer position acquisition device can be specifically referred to the wafer position acquisition device 100 of the above embodiment, which will not be described again here.
  • the embodiment of the present application also separately provides a wafer position calibration device for semiconductor process equipment.
  • the structure and function of the wafer position calibration device can be specifically referred to the wafer position calibration device of the above embodiment, and will not be repeated here.
  • the embodiment of the present application provides a wafer position calibration method, which may specifically include the following steps:
  • Step S110 emitting an annular light beam toward the wafer on the wafer carrying surface, so that the edge of the wafer falls within the irradiation range of the annular light beam.
  • annular light beam can be emitted to the wafer 200 through the light emitting component 120 so that the edge of the wafer 200 falls within the irradiation range of the annular light beam.
  • the diameter of the wafer 200 should be greater than the inner ring diameter d3 of the annular light beam, and smaller than the outer ring diameter d4 of the annular light beam.
  • d4 wafer diameter + d2 is generally preferred, so that the edge of the wafer 200 falls into the middle of the annular light beam.
  • the vertical distance between the light emitting assembly 120 and the wafer 200 on the wafer carrying surface can be adjusted by the elevating support 150, so as to form different outer ring diameters d4 of the annular light beam by changing the height L, thereby ensuring that the edges of the wafers 200 of different sizes can fall into the irradiation range of the annular light beam.
  • Step S120 receiving the irradiation of the annular light beam to detect and obtain the contour information of the wafer.
  • the irradiation of the annular light beam can be received by the light detection component 130 to detect and obtain the contour information of the wafer.
  • the light detector array of the light detection component can be encoded with data to obtain the contour information of the wafer when the light detector array receives the irradiation of the annular light beam.
  • the data encoding of the steps of the method can specifically be to form a corresponding X-Y coordinate system on the surface where the light detector array is located.
  • a corresponding blocked annular light spot can be formed on the light detector array by partially blocking the annular light beam by the wafer 200, and the light detector array can obtain the contour information of the wafer by detecting the blocked annular light spot.
  • the contour information should include the coordinates of each point along the edge of the wafer 200.
  • the position information of the wafer 200 can be obtained by analyzing and calculating the contour information of the wafer 200.
  • the position information may specifically include the notch direction and center of mass position of the wafer 200.
  • Step S140 controlling the wafer to move to a target position according to the position information of the wafer.
  • the wafer 200 in the process of confirming the entire wafer position information, only one irradiation detection is needed to complete the confirmation of the entire wafer position information.
  • the wafer 200 does not need to perform any movement including rotation in the process of confirming the entire position information. It only needs to be moved to the target position once through the moving mechanism after the position information is confirmed. Therefore, the wafer calibration time can be greatly saved.
  • the process of executing the above method step of "obtaining the position information of the wafer according to the contour information of the wafer" is specifically as follows:
  • Step S131 fitting the outer shape curve of the wafer according to the contour information of the wafer, and determining whether the outer shape curve of the wafer is complete.
  • the shape curve of the wafer can be fitted according to the contour information of the wafer, and it can be determined whether the shape curve of the wafer is complete.
  • this method step can confirm whether the distance of the center of mass of the wafer 200 deviating from the center point of the wafer bearing surface of the supporting base 110 exceeds the standard value by judging whether the shape curve of the wafer is complete.
  • Step S132 when it is determined that the outer shape curve of the wafer is complete, determining the position information of the wafer according to the outer shape curve of the wafer.
  • the position information of the wafer can be determined according to the shape curve of the wafer.
  • the specific process is as follows: first, according to the shape curve of the wafer 200, the notch direction of the wafer 200 (i.e., the direction of the notch 210) is determined. and the centroid position (i.e., the coordinate information of the centroid position, which can be determined by the least square method according to the shape curve of the wafer 200). Then, the centroid position of the wafer 200 and the notch direction of the wafer 200 are integrated to determine the position information of the wafer 200.
  • the process of executing the above method step of "controlling the wafer to move to the target position according to the position information of the wafer” is specifically as follows:
  • Step S141 According to the center of mass position of the wafer, the wafer is controlled to translate so that the center of mass position of the wafer coincides with the center point position of the wafer carrying surface.
  • Step S142 According to the notch direction of the wafer, the wafer carrying surface is controlled to drive the wafer to rotate, so that the notch direction of the wafer faces the target orientation.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

本申请公开了一种半导体工艺设备及其晶圆位置获取、校准装置和方法，属于半导体工艺技术。该晶圆位置获取装置包括：承载基座，包括晶圆承载面，晶圆承载面用于承载晶圆；光发射组件，位于晶圆承载面的正上方，用于向晶圆承载面上的晶圆发出环形光束，使得晶圆的沿边落入环形光束的照射范围；光检测组件，包括分布在晶圆承载面的下方的光探测器阵列，用于通过接收环形光束的照射以得到晶圆的轮廓信息，该轮廓信息用于指示晶圆的位置信息。本技术方案，其可大大节省晶圆校准时间。

Description

半导体工艺设备及其晶圆位置获取、校准装置和方法 技术领域
本申请属于半导体工艺技术领域，尤其涉及一种半导体工艺设备及其晶圆位置获取、校准装置和方法。
背景技术
半导体集成电路是将很多元器件集成在一个芯片内，而承载这些芯片的基板便是晶圆。晶圆由单晶硅棒经过多步工艺形成，其中一项便是采用倒角机构在晶圆上形成槽口(即Notch口，也称为V形槽)。国标规定Notch口深度为1mm，角度为90°，是一种具有一定角度和深度的凹型结构。晶圆上的Notch口的作用是为了识别晶圆的结晶方向以保证在以后的整套工艺过程中方向的一致性。因而，无论是光刻、刻蚀还是沉积等一系列的半导体工艺过程中，都会存在一个确定晶圆Notch口的方向的步骤，以校准晶圆的位置，确保晶圆在整套工艺过程中方向的一致性。
现有技术中，主流的晶圆位置校准装置是基于激光的单点检测，其简单示意图如图1所示，其中1代表晶圆校准的机械支撑机构，2代表激光发射组件，3代表激光检测组件，4代表运动机构，5代表晶圆。现有方法通过运动机构4旋转晶圆5，激光检测组件3在晶圆5旋转过程中获取单点的位置数据，再通过时间与运动机构4的速度进行晶圆5的外形推断，然后根据推断的外形确认晶圆5的质心位置，再通过运动机构4对晶圆5进行位置调节。最后进入下一旋转周期，再进行晶圆5的Notch口51的方向确认。可见，现有的晶圆位置装置通过运动机构4旋转晶圆5，再由激光检测组件3获取的位置数据推断晶圆5的外形，导致这种方法的准确度强烈依靠运动的时间与速度信息的准确性，进而很容易造成晶圆5的质心计算的误差，导致需要晶 圆5多次旋转来不断修正质心的信息，同时，其确认晶圆5的质心与确认晶圆5的Notch口51分两次进行，这些均极大增加了晶圆校准时间。
发明内容
本申请实施例提供一种半导体工艺设备及其晶圆位置获取、校准装置和方法，旨在解决现有技术晶圆位置校准装置进行晶圆位置校准时耗时较多的技术问题。
第一方面，本申请实施例提供一种晶圆位置获取装置，应用在半导体工艺设备中，所述晶圆位置获取装置包括：
承载基座，包括晶圆承载面，所述晶圆承载面用于承载晶圆；
光发射组件，位于所述晶圆承载面的正上方，用于向所述晶圆承载面上的所述晶圆发出环形光束，使得所述晶圆的沿边落入所述环形光束的照射范围；
光检测组件，包括分布在所述晶圆承载面的下方的光探测器阵列，用于通过接收所述环形光束的照射以得到所述晶圆的轮廓信息，所述轮廓信息用于指示所述晶圆的位置信息。
在一些实施例中，所述光发射组件包括准直光源和锥透镜，其中，所述准直光源用于正对所述晶圆承载面的中心，发出预定直径的准直光束；
所述锥透镜位于所述准直光束的照射路径上，用于将所述准直光束转换成所述环形光束，并使得所述环形光束的宽度为所述预定直径的一半。
在一些实施例中，所述环形光束落在所述晶圆承载面上的所述晶圆所在的平面时，所述晶圆的直径大于所述环形光束的内环直径，并小于所述环形光束的外环直径。
在一些实施例中，所述晶圆位置获取装置还包括可升降支架，用于支撑固定所述光发射组件，使得所述光发射组件到所述晶圆承载面上的所述晶圆 的垂直距离可调。
第二方面，本申请实施例提供一种晶圆位置校准装置，应用在半导体工艺设备中，所述晶圆位置校准系统包括控制器、移动机构以及上述的晶圆位置获取装置；其中，
所述控制器用于根据所述晶圆位置获取装置得到的所述晶圆的轮廓信息，获取所述晶圆的位置信息；并根据所述位置信息控制所述移动机构工作，使得所述晶圆运动到目标位置。
在一些实施例中，所述移动机构包括旋转机构和平移机构；所述旋转机构用于驱动所述承载基座旋转；所述平移机构用于驱动所述晶圆承载面上的所述晶圆相对所述晶圆承载面平移；
所述控制器用于根据所述位置信息控制所述旋转机构驱动所述承载基座旋转以带动所述晶圆旋转到目标位置；并且用于根据所述位置信息控制所述平移机构驱动所述晶圆平移到目标位置。
在一些实施例中，在一些实施例中，所述控制器用于根据所述晶圆位置获取装置得到的所述晶圆的轮廓信息，获取所述晶圆的位置信息，包括：
所述控制器用于根据所述晶圆的轮廓信息拟合出所述晶圆的外形曲线，并判断所述晶圆的外形曲线是否完整；
所述控制器用于在判断所述晶圆的外形曲线完整时，根据所述晶圆的外形曲线确定所述晶圆的位置信息。
在一些实施例中，所述控制器用于根据所述晶圆的外形曲线确定所述晶圆的位置信息，包括：
所述控制器用于根据所述晶圆的外形曲线，确定所述晶圆的槽口方向和质心位置；
所述控制器用于根据所述晶圆的质心位置和所述晶圆的槽口方向，确定所述晶圆的位置信息。
第三方面，本申请实施例提供一种半导体工艺设备，包括工艺腔室以及连通所述工艺腔室的晶圆暂存腔室，所述晶圆暂存腔室内安设有上述的晶圆位置获取装置或上述的晶圆位置校准装置。
第四方面，本申请实施例提供一种晶圆位置校准方法，包括以下步骤：
向晶圆承载面上的晶圆发出环形光束，使得所述晶圆的沿边落入所述环形光束的照射范围；
接收所述环形光束的照射，以检测得到所述晶圆的轮廓信息；
根据所述晶圆的轮廓信息，获取得到所述晶圆的位置信息；
根据所述晶圆的位置信息，控制所述晶圆运动到目标位置。
在一些实施例中，所述根据所述晶圆的轮廓信息，获取得到所述晶圆的位置信息的步骤包括：
根据所述晶圆的轮廓信息拟合出所述晶圆的外形曲线，并判断所述晶圆的外形曲线是否完整；
在判断所述晶圆的外形曲线完整时，根据所述晶圆的外形曲线确定所述晶圆的位置信息。
在一些实施例中，所述根据所述晶圆的外形曲线确定所述晶圆的位置信息的步骤包括：
根据所述晶圆的外形曲线，确定所述晶圆的槽口方向和质心位置；
根据所述晶圆的质心位置和所述晶圆的槽口方向，确定所述晶圆的位置信息。
在一些实施例中，所述根据所述晶圆的位置信息，控制所述晶圆运动到目标位置的步骤包括：
根据所述晶圆的质心位置，控制所述晶圆平移，使得所述晶圆的质心位置和所述晶圆承载面的中心点位置重合；
根据所述晶圆的槽口方向，控制所述晶圆承载面带动所述晶圆旋转，使 得所述晶圆的槽口方向朝向目标方位。
在本申请中，由于其晶圆位置获取装置的光发射组件可向晶圆承载面上的晶圆发出环形光束，并使得该晶圆的沿边落入该环形光束的照射范围，同时，其晶圆位置获取装置的光检测组件包括分布在晶圆承载面的下方的光探测器阵列，可通过接收该环形光束的照射，以得到该晶圆的轮廓信息，该轮廓信息可指示该晶圆的位置信息(包括该晶圆的槽口方向和质心位置)。另外，其晶圆位置校准装置的控制器可根据该晶圆的轮廓信息，获取该晶圆的位置信息，并根据该晶圆的位置信息控制移动机构工作，使得该晶圆运动到目标位置，以实现该晶圆的位置校准。可见，在本技术方案中，其在整个晶圆位置信息的确认过程中，只需一次照射检测便可完成整个晶圆位置信息的确认，同时，晶圆在整个位置信息的确认过程中无需进行包括旋转在内的任何运动，只需在位置信息的确认后通过移动机构一次运动到目标位置即可，因而，可大大节省晶圆校准时间。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其有益效果显而易见。
图1是现有技术晶圆位置校准装置的工作示意图。
图2是本申请实施例提供的晶圆位置校准装置的工作示意图。
图3是图2所示晶圆位置校准装置的工作原理图。
图4是本申请实施例提供的晶圆位置校准方法的一种流程框图。
图5是图4所示的晶圆位置校准方法的步骤S130的流程框图。
图6是图4所示的晶圆位置校准方法的步骤S140的流程框图。
具体实施方式
下面结合附图，对本申请实施例中的技术方案进行清楚、完整地描述， 显然，所描述的实施例仅是本申请一部分实施例，而非全部实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。
半导体集成电路是将很多元器件集成在一个芯片内，而承载这些芯片的基板便是晶圆。晶圆由单晶硅棒经过许多步工艺形成，其中一项便是采用倒角机构在晶圆上形成槽口(即Notch口，也称为V形槽)。国标规定Notch口深度为1mm，角度为90°，是一种具有一定角度和深度的凹型结构。晶圆上的Notch口的作用是为了识别晶圆的结晶方向以保证在以后的整套工艺过程中方向的一致性。因而，无论是光刻、刻蚀还是沉积等一系列的半导体工艺过程中，都会存在一个确定晶圆Notch口的方向的步骤，以校准晶圆的位置，确保晶圆在整套工艺过程中方向的一致性。
现有技术中，主流的晶圆位置校准装置是基于激光的单点检测，其简单示意图如图1所示，其中1代表晶圆校准的机械支撑机构，2代表激光发射组件，3代表激光检测组件，4代表运动机构，5代表晶圆。现有方法通过运动机构4带动晶圆5旋转，激光检测组件3在晶圆5旋转过程中获取单点的位置数据，再通过时间与运动机构4的速度进行晶圆5的外形推断，然后根据推断的外形确认晶圆5的质心位置，再通过运动机构4对晶圆5进行位置调节。最后进入下一旋转周期，再进行晶圆5的Notch口51的方向确认。可见，现有的晶圆位置装置通过运动机构4旋转晶圆5，再由激光检测组件3处获取的位置数据推断晶圆5的外形，导致这种方法的准确度强烈依靠运动的时间与速度信息的准确性，进而很容易造成晶圆5的质心计算的误差，导致需要晶圆5多次旋转来不断修正质心的信息，同时，其确认晶圆5的质心与确认晶圆5的Notch口51分两次进行，这些均极大增加了晶圆校准时间。
基于此，有必要提供一种新的晶圆位置获取、校准方法的解决方案，以 解决现有技术晶圆位置校准装置进行晶圆位置校准时耗时较多的技术问题。
在一个实施例中，如图2及图3所示，本申请实施例提供一种半导体工艺设备，该半导体工艺设备包括工艺腔室(未图示)以及连通工艺腔室的晶圆暂存腔室(未图示)，该晶圆暂存腔室内安设有晶圆位置校准装置或晶圆位置获取装置100。该晶圆位置校准装置具体可包括控制器(未图示)、移动机构(未图示)以及晶圆位置获取装置100。该晶圆位置获取装置100具体可包括承载基座110、光发射组件120以及光检测组件130。其中，承载基座110具体可包括晶圆承载面，该晶圆承载面用于承载晶圆200。光发射组件120位于晶圆承载面的正上方，用于向晶圆承载面上的晶圆200发出环形光束，使得晶圆200的沿边落入环形光束的照射范围。光检测组件130具体可包括分布在晶圆承载面的下方的光探测器阵列，用于通过接收环形光束的照射以得到晶圆200的轮廓信息，该轮廓信息用于指示晶圆200的位置信息。上述控制器用于根据该晶圆位置获取装置100得到的晶圆200的轮廓信息，获取晶圆200的位置信息；并根据该位置信息控制移动机构工作，使得晶圆200运动到目标位置，以实现晶圆200的位置校准。更具体地，该位置信息可以包括晶圆200的槽口位置(即槽口方向)和晶圆200在晶圆承载面上所处的位置；该目标位置可以包括晶圆200的槽口所需要旋转到的位置和晶圆200所需要在晶圆承载面上的位置。
可以理解的是，承载基座110上用于承载晶圆200的晶圆承载面应略小于最小晶圆的尺寸，使得大于或等于最小晶圆的任意尺寸的晶圆200承载于该晶圆承载面上时，可将该晶圆承载面完全覆盖。光探测器阵列的覆盖范围应远大于晶圆200的尺寸，主要设置在该晶圆承载面的下方的一定尺寸范围内，且可在正对该晶圆承载面的下方处不设置相应的光探测器，即，光探测器阵列分布在位于正对该晶圆承载面的下方处之外的区域，这样可确保晶圆200的沿边落入环形光束的照射范围时，环形光束的一部分照射在晶圆200 的沿边上，环形光束的另一部分照射在该光探测器阵列，使得该光探测器阵列可据此来检测得到晶圆200的轮廓信息。同时，控制器可根据该轮廓信息，获取该晶圆200的位置信息，该位置信息具体可包括晶圆200的质心和晶圆200的槽口210的槽口方向。详细检测过程会在下文方法实施例中进行进一步的详细说明，此处先不赘述。
另外，为了更好地实现光探测器阵列的设置，光探测器阵列可直接呈矩阵分布在整个装置的支撑平台140的上表面，或者呈环形阵列方式分布在整个装置的支撑平台140的上表面。同时，为了尽可能降低该光探测器阵列对该晶圆200的位置信息的测量误差，该承载基座110的晶圆承载面与该上表面之间的高度差应尽可能小，使得晶圆200的表面与该光探测器阵列的表面尽可能接近于在同一水平面上。光探测器阵列具体可以是感光耦合组件(Charge-coupled Device，简称CCD)矩阵。
这样一来，在本申请中，由于其晶圆位置获取装置100的光发射组件120可向晶圆承载面上的晶圆200发出环形光束，并使得晶圆200的沿边落入该环形光束的照射范围，同时，其晶圆位置获取装置100的光检测组件130包括分布在晶圆承载面的下方的光探测器阵列，可通过接收该环形光束的照射，以得到该晶圆的轮廓信息，该轮廓信息可指示晶圆200的位置信息(包括该晶圆200的槽口方向和质心位置)。另外，其晶圆位置校准装置的控制器可根据该晶圆的轮廓信息，获取该晶圆的位置信息，并根据该晶圆200的位置信息驱动移动机构工作，使得晶圆200运动到目标位置，以实现该晶圆200的位置校准。可见，在本技术方案中，其在整个晶圆位置信息的确认过程中，只需一次照射检测便可完成整个晶圆位置信息的确认，同时，晶圆200在整个位置信息的确认过程中无需进行包括旋转在内的任何运动，只需在位置信息的确认后通过移动机构一次运动到目标位置即可，因而，可大大节省晶圆校准时间。
在一些示例中，如图2及图3所示，该光发射组件120具体可包括准直光源121和锥透镜122，其中，准直光源121用于正对晶圆承载面的中心，发出预定直径d1的准直光束，该准直光束例如可以为激光光束。锥透镜122位于准直光束的照射路径上，准直光束通过锥透镜122形成贝塞尔光束特性，可将准直光束转换成环形光束，并使得该环形光束的宽度d2为预定直径d1的一半，即d2＝d1/2。这是因为，准直光束在穿过锥透镜122时，会受到折射和反射的作用，使得光线的传播方向发生变化。当入射角符合锥透镜122内部角度的要求时，光线会沿着锥透镜122内部多次反射，形成一个小角度的旋转。这种旋转可以改变横向分布式宽度非常窄的光束的走向。随着光线通过三角形平面的不断反射，其轨迹会逐渐偏移并环绕起来，因此形成了环形光斑。这种现象被称为光束旋转或光学螺旋模式(optical vortex mode)。为更好地发出准直光束及使得该准直光束更好地转换成所需的环形光束，该准直光源121例如可为激光器，该锥透镜122例如可为圆锥透镜。
在一些示例中，如图2及图3所示，为更好地确保晶圆200的沿边落入该环形光束的照射范围，该环形光束落在晶圆承载面上的晶圆200所在的平面时，该晶圆200的直径应大于该环形光束的内环直径d3，并小于该环形光束的外环直径d4。优选地，一般以d4＝晶圆直径+d2为佳，即使得该晶圆200的边沿落入该环形光束的中部，此时，该环形光束的宽度d2也确定了本晶圆校准装置100校准的标准值(spec值)，当晶圆200的质心偏离该承载基座110的晶圆承载面的中心点的距离超过该标准值后，便认为需要重新校准工位后，再进行晶圆位置的校准，即标准值具体可等于该环形光束的宽度d2的一半。
同时，由于该环形光束的外环直径d4与锥透镜122的顶角到晶圆200的高度L成正比例关系(该正比例关系可根据光的折射定律与正切定理得出：假设折射角为θ，入射角为π/2-(π/2-α)＝α，则nsinα＝sinθ；正切定理 可得d4＝2Ltan(θ-α)，根据n>1，可得θ>α，可得d4与L的线性关系中系数为正，成正比例关系。由于锥透镜122的底角α很小，依据小角度近似原则nsinα＝sinθ可得到θ＝nα)：d3＝2L×tan[(n-1)α]；
其中，n为锥透镜122的折射率，其与锥透镜122的材质有关。由于此光学特性，通过对高度L的调整，可实现对不同尺寸晶圆200的位置校准。此时，该晶圆位置获取装置100还包括可升降支架150，用于支撑固定光发射组件120，使得光发射组件120到晶圆承载面上的晶圆200的垂直距离可调，进而通过改变上述高度L，形成不同的该环形光束的外环直径d4，以对应不同尺寸晶圆200的位置校准。现以折射率n为1.8，α角为30度的三棱镜122为例，激光光束直径20mm，利用近似公式可计算，tan[(1.8-1)×30o]＝0.445，d4＝300mm+10mm，L＝d4/(2×0.445)≈348mm，即当晶圆200的直径为300mm时，其需将上述高度L约调整为348mm。
这样一来，相比于现有晶圆位置校准装置仅针对单一尺寸的晶圆的位置校准，本晶圆位置校准装置可在不改变校准设备的情况下兼容不同尺寸大小的晶圆的位置校准工作。
在一些示例中，上述移动机构具体可包括旋转机构和平移机构。其中，该旋转机构可用于驱动承载基座110旋转，即该旋转机构可直接作用在承载基座110上，以使得其晶圆承载面带动晶圆承载面上的晶圆200旋转，进而使得该晶圆200的槽口方向朝向目标方向，该旋转机构例如可以为电机。该平移机构可用于驱动晶圆承载面上的晶圆200相对晶圆承载面平移，即该平移机构是直接作用在晶圆承载面上的晶圆200上，具体可以是晶圆承载面上方设置的机械手，以直接抓取晶圆承载面上的晶圆200，使得该晶圆200相对晶圆承载面平移，进而使得该晶圆200的质心位置和该晶圆承载面的中心点位置重合。也可以是晶圆承载面下方设置的动力机构，该动力机构可通过多个升降顶针支撑该晶圆200的沿边，以带动该晶圆200相对晶圆承载面平 移，进而使得该晶圆200的质心位置和该晶圆承载面的中心点位置重合。进一步地，控制器用于根据位置信息(即晶圆200的槽口方向)控制旋转机构驱动承载基座110旋转以带动晶圆200旋转到目标位置(即目标槽口方向)；并且用于根据位置信息(即晶圆200的质心位置)控制平移机构驱动晶圆200平移到目标位置(即目标质心位置)。
在一个实施例中，本申请实施例还单独提供一种半导体工艺设备的晶圆位置获取装置，该晶圆位置获取装置的结构与功能具体可参照上述实施例的晶圆位置获取装置100，此处不再赘述。
在一个实施例中，本申请实施例还单独提供一种半导体工艺设备的晶圆位置校准装置，该晶圆位置校准装置的结构与功能具体可参照上述实施例的晶圆位置校准装置，此处不再赘述。
在一个实施例中，如图4所示，本申请实施例提供一种晶圆位置校准方法，该晶圆位置校准方法具体可包括以下步骤：
步骤S110：向晶圆承载面上的晶圆发出环形光束，使得该晶圆的沿边落入该环形光束的照射范围。
可以理解的是，如图2所示，当将晶圆200放于承载基座110的晶圆承载面上后，可通过光发射组件120向该晶圆200发出环形光束，使得该晶圆200的沿边落入该环形光束的照射范围。
另外，基于上述表述可知，为更好地确保晶圆200的沿边落入该环形光束的照射范围，该环形光束落在晶圆200所在的平面时，该晶圆200的直径应大于该环形光束的内环直径d3，并小于该环形光束的外环直径d4。优选地，一般以d4＝晶圆直径+d2为佳，即使得该晶圆200的边沿落入该环形光束的中部。同时，由于该环形光束的外环直径d4与锥透镜122的顶角到晶圆200的高度L成正比例关系：d3＝2L×tan[(n-1)α]；其中，n为锥透镜122的折射率，其与锥透镜122的材质有关。由于此光学特性，可通过对高度L的调 整，实现对不同尺寸晶圆200的位置校准。此时，可通过可升降支架150，来调整光发射组件120到晶圆承载面上的晶圆200的垂直距离，以通过改变上述高度L，形成不同的该环形光束的外环直径d4，进而可确保不同尺寸晶圆200的沿边均可落入该环形光束的照射范围。
步骤S120：接收该环形光束的照射，以检测得到该晶圆的轮廓信息。
可以理解是，当通过上述方法步骤，使得该晶圆200的沿边落入该环形光束的照射范围后，便可通过光检测组件130接收该环形光束的照射，以检测得到该晶圆的轮廓信息。具体可通过对该光检测组件的光探测器阵列进行数据编码，以在该光探测器阵列接收环形光束的照射时，获取该晶圆的轮廓信息。
本方法步骤的数据编码具体可以是在光探测器阵列所在表面形成相应的X-Y坐标系，这样，便可通过晶圆200对该环形光束的部分遮挡而在光探测器阵列形成相应的被遮挡的环形光斑，而光探测器阵列便可通过检测这个被遮挡的环形光斑，来获取得到该晶圆的轮廓信息，该轮廓信息应包括该晶圆200的沿边各点的坐标。
步骤S130：根据该晶圆的轮廓信息，获取得到该晶圆的位置信息。
可以理解的是，当通过上述方法步骤得到该晶圆200的轮廓信息后，便可通过对该晶圆200的轮廓信息进行分析计算，获取得到该晶圆200的位置信息，该位置信息具体可包括该晶圆200的槽口方向和质心位置。
步骤S140：根据该晶圆的位置信息，控制该晶圆运动到目标位置。
可以理解的是，当通过上述方法步骤得到该晶圆200的位置信息后，便可根据该晶圆200的位置信息，控制该晶圆200运动到目标位置，具体可通过上述提到的移动机构实现，即通过移动机构带动晶圆200移动，使得该晶圆200的质心位置和该晶圆承载面的中心点位置重合以及使得该晶圆200的槽口方向朝向目标方向。
这样一来，在本实施例的技术方案中，其在整个晶圆位置信息的确认过程中，只需一次照射检测便可完成整个晶圆位置信息的确认，同时，晶圆200在整个位置信息的确认过程中无需进行包括旋转在内的任何运动，只需在位置信息的确认后通过移动机构一次运动到目标位置即可，因而，可大大节省晶圆校准时间。
在一些示例中，为更好地实现晶圆的位置信息的确认，执行上述方法步骤“根据该晶圆的轮廓信息，获取得到该晶圆的位置信息”的过程具体如下：
步骤S131：根据该晶圆的轮廓信息拟合出该晶圆的外形曲线，并判断该晶圆的外形曲线是否完整。
可以理解的是，当通过上述方法步骤得到该晶圆的轮廓信息后，便可根据该晶圆的轮廓信息拟合出该晶圆的外形曲线，并判断该晶圆的外形曲线是否完整。基于上述表述可知，当晶圆200的质心偏离该承载基座110的承载面的中心点的距离超过该标准值后，便认为需要重新校准工位，故本方法步骤可通过判断该晶圆的外形曲线是否完整来确认晶圆200的质心偏离该承载基座110的晶圆承载面的中心点的距离是否超过该标准值，这是因为，当晶圆200的质心偏离该承载基座110的晶圆承载面的中心点的距离超过该标准值后，会导致晶圆200的沿边有部分会超出该环形光束的照射范围，进而导致无法获得该晶圆200的完整轮廓信息，最终，导致该外形曲线不完整，因而，在判断该晶圆的外形曲线不完整时，需要重新校准工位后，再进行晶圆位置的校准。
步骤S132：在判断该晶圆的外形曲线完整时，根据该晶圆的外形曲线确定该晶圆的位置信息。
可以理解的是，当通过上述方法步骤判断该晶圆的外形曲线完整时，则可根据该晶圆的外形曲线确定该晶圆的位置信息，具体过程如下：先根据该晶圆200的外形曲线，来确定该晶圆200的槽口方向(即槽口210的朝向) 和质心位置(即其质心位置的坐标信息，该质心位置具体可根据该晶圆200的外形曲线，通过最小二乘法来确定)。再整合该晶圆200的质心位置和该晶圆200的槽口方向，确定该晶圆200的位置信息。
在一些示例中，为更好地实现控制晶圆运动到目标位置，执行上述方法步骤“根据该晶圆的位置信息，控制该晶圆运动到目标位置”的过程具体如下：
步骤S141：根据该晶圆的质心位置，控制该晶圆平移，使得该晶圆的质心位置和该晶圆承载面的中心点位置重合。
可以理解的是，如图2所示，为使得该晶圆200运动到目标位置，即实现该晶圆200的位置校准，其首先需确保该晶圆200的质心位置和该晶圆承载面的中心点位置重合，此时，可根据上述方法步骤获得的该晶圆200的位置信息中的该晶圆200的质心位置，控制该晶圆200平移，具体为相对晶圆承载面平移，直至该晶圆200平移至该晶圆200的质心位置和该晶圆承载面的中心点位置重合。
步骤S142：根据该晶圆的槽口方向，控制该晶圆承载面带动该晶圆旋转，使得该晶圆的槽口方向朝向目标方位。
可以理解的是，如图2所示，为使得该晶圆200运动到目标位置，即实现该晶圆200的位置校准，其还需在确保该晶圆200的质心位置和该晶圆承载面的中心点位置重合后，根据上述方法步骤获得的该晶圆200的位置信息中的该晶圆200的槽口方向，控制该晶圆200旋转，具体为控制该晶圆承载面带动该晶圆200旋转，直至该晶圆200的槽口方向朝向目标方位，即可完成该晶圆200的位置校准。
尽管已经相对于一个或多个实现方式示出并描述了本申请，但是本领域技术人员基于对本说明书和附图的阅读和理解将会想到等价变型和修改。本申请包括所有这样的修改和变型，并且仅由所附权利要求的范围限制。特别 地关于由上述组件执行的各种功能，用于描述这样的组件的术语旨在对应于执行所述组件的指定功能(例如其在功能上是等价的)的任意组件(除非另外指示)，即使在结构上与执行本文所示的本说明书的示范性实现方式中的功能的公开结构不等同。
即，以上所述仅为本申请的实施例，并非因此限制本申请的专利范围，凡是利用本申请说明书及附图内容所作的等效结构或等效流程变换，例如各实施例之间技术特征的相互结合，或直接或间接运用在其他相关的技术领域，均同理包括在本申请的专利保护范围内。
另外，在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。另外，对于特性相同或相似的结构元件，本申请可采用相同或者不相同的标号进行标识。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请中，“示例性”一词是用来表示“用作例子、例证或说明”。本申请中被描述为“示例性”的任何一个实施例不一定被解释为比其它实施例更加优选或更加具优势。为了使本领域任何技术人员能够实现和使用本申请，本申请给出了以上描述。在以上描述中，为了解释的目的而列出了各个细节。应当明白的是，本领域普通技术人员可以认识到，在不使用这些特定细节的情况下也可以实现本申请。在其它实施例中，不会对公知的结构和过程进行 详细阐述，以避免不必要的细节使本申请的描述变得晦涩。因此，本申请并非旨在限于所示的实施例，而是与符合本申请所公开的原理和特征的最广范围相一致。

Claims (13)

  1. 一种晶圆位置获取装置，应用在半导体工艺设备中，其特征在于，所述晶圆位置获取装置包括：
    承载基座，包括晶圆承载面，所述晶圆承载面用于承载晶圆；
    光发射组件，位于所述晶圆承载面的正上方，用于向所述晶圆承载面上的所述晶圆发出环形光束，使得所述晶圆的沿边落入所述环形光束的照射范围；
    光检测组件，包括分布在所述晶圆承载面的下方的光探测器阵列，用于通过接收所述环形光束的照射以得到所述晶圆的轮廓信息，所述轮廓信息用于指示所述晶圆的位置信息。
  2. 根据权利要求1所述的晶圆位置获取装置，其特征在于，所述光发射组件包括准直光源和锥透镜，其中，
    所述准直光源用于正对所述晶圆承载面的中心，发出预定直径的准直光束；
    所述锥透镜位于所述准直光束的照射路径上，用于将所述准直光束转换成所述环形光束，并使得所述环形光束的宽度为所述预定直径的一半。
  3. 根据权利要求1或2所述的晶圆位置获取装置，其特征在于，所述环形光束落在所述晶圆承载面上的所述晶圆所在的平面时，所述晶圆的直径大于所述环形光束的内环直径，并小于所述环形光束的外环直径。
  4. 根据权利要求1或2所述的晶圆位置获取装置，其特征在于，所述位置获取装置还包括可升降支架，用于支撑固定所述光发射组件，使得所述光发射组件到所述晶圆承载面上的所述晶圆的垂直距离可调。
  5. 一种晶圆位置校准装置，应用在半导体工艺设备中，其特征在于，所述晶圆位置校准系统包括控制器、移动机构以及如权利要求1-4任一项所述的晶圆位置获取装置；其中，
    所述控制器用于根据所述晶圆位置获取装置得到的所述晶圆的轮廓信息，获取所述晶圆的位置信息；并根据所述位置信息控制所述移动机构工作，使得所述晶圆运动到目标位置。
  6. 根据权利要求5所述的晶圆位置校准装置，其特征在于，所述移动机构包括旋转机构和平移机构；所述旋转机构用于驱动所述承载基座旋转；所述平移机构用于驱动所述晶圆承载面上的所述晶圆相对所述晶圆承载面平移；
    所述控制器用于根据所述位置信息控制所述旋转机构驱动所述承载基座旋转以带动所述晶圆旋转到目标位置；并且用于根据所述位置信息控制所述平移机构驱动所述晶圆平移到目标位置。
  7. 根据权利要求5所述的晶圆位置校准装置，其特征在于，所述控制器用于根据所述晶圆位置获取装置得到的所述晶圆的轮廓信息，获取所述晶圆的位置信息，包括：
    所述控制器用于根据所述晶圆的轮廓信息拟合出所述晶圆的外形曲线，并判断所述晶圆的外形曲线是否完整；
    所述控制器用于在判断所述晶圆的外形曲线完整时，根据所述晶圆的外形曲线确定所述晶圆的位置信息。
  8. 根据权利要求7所述的晶圆位置校准装置，其特征在于，所述控制器用于根据所述晶圆的外形曲线确定所述晶圆的位置信息，包括：
    所述控制器用于根据所述晶圆的外形曲线，确定所述晶圆的槽口方向和质心位置；
    所述控制器用于根据所述晶圆的质心位置和所述晶圆的槽口方向，确定所述晶圆的位置信息。
  9. 一种半导体工艺设备，其特征在于，包括工艺腔室以及连通所述工艺腔室的晶圆暂存腔室，所述晶圆暂存腔室内安设有如权利要求1-4任一项所述的晶圆位置获取装置或如权利要求5-8任一项所述的晶圆位置校准装置。
  10. 一种晶圆位置校准方法，其特征在于，包括以下步骤：
    向晶圆承载面上的晶圆发出环形光束，使得所述晶圆的沿边落入所述环形光束的照射范围；
    接收所述环形光束的照射，以检测得到所述晶圆的轮廓信息；
    根据所述晶圆的轮廓信息，获取得到所述晶圆的位置信息；
    根据所述晶圆的位置信息，控制所述晶圆运动到目标位置。
  11. 根据权利要求10所述的晶圆位置校准方法，其特征在于，所述根据所述晶圆的轮廓信息，获取得到所述晶圆的位置信息的步骤包括：
    根据所述晶圆的轮廓信息拟合出所述晶圆的外形曲线，并判断所述晶圆的外形曲线是否完整；
    在判断所述晶圆的外形曲线完整时，根据所述晶圆的外形曲线确定所述晶圆的位置信息。
  12. 根据权利要求11所述的晶圆位置校准方法，其特征在于，所述根据所述晶圆的外形曲线确定所述晶圆的位置信息的步骤包括：
    根据所述晶圆的外形曲线，确定所述晶圆的槽口方向和质心位置；
    根据所述晶圆的质心位置和所述晶圆的槽口方向，确定所述晶圆的位置信息。
  13. 根据权利要求12所述的晶圆位置校准方法，其特征在于，所述根据所述晶圆的位置信息，控制所述晶圆运动到目标位置的步骤包括：
    根据所述晶圆的质心位置，控制所述晶圆平移，使得所述晶圆的质心位置和所述晶圆承载面的中心点位置重合；
    根据所述晶圆的槽口方向，控制所述晶圆承载面带动所述晶圆旋转，使得所述晶圆的槽口方向朝向目标方位。
PCT/CN2024/101547 2023-06-30 2024-06-26 半导体工艺设备及其晶圆位置获取、校准装置和方法 Ceased WO2025002165A1 (zh)

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