WO2024255745A1 - 一种晶圆位置检测装置及半导体设备 - Google Patents

一种晶圆位置检测装置及半导体设备 Download PDF

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Publication number
WO2024255745A1
WO2024255745A1 PCT/CN2024/098561 CN2024098561W WO2024255745A1 WO 2024255745 A1 WO2024255745 A1 WO 2024255745A1 CN 2024098561 W CN2024098561 W CN 2024098561W WO 2024255745 A1 WO2024255745 A1 WO 2024255745A1
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WIPO (PCT)
Prior art keywords
wafer
linear sensor
receiving end
center position
center
Prior art date
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Application number
PCT/CN2024/098561
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English (en)
French (fr)
Inventor
赵海洋
陈路路
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to KR1020257036506A priority Critical patent/KR102911248B1/ko
Publication of WO2024255745A1 publication Critical patent/WO2024255745A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H10P72/0608—Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/03—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness by measuring coordinates of points
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0618—Apparatus for monitoring, sorting, marking, testing or measuring using identification means, e.g. labels on substrates or labels on containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H10P72/53—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/201—Marks applied to devices, e.g. for alignment or identification located on the periphery of wafers, e.g. orientation notches or lot numbers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2210/00—Aspects not specifically covered by any group under G01B, e.g. of wheel alignment, caliper-like sensors
    • G01B2210/56—Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Definitions

  • the present application relates to the field of semiconductor manufacturing technology, and in particular to a wafer position calibration detection device and semiconductor equipment.
  • the wafer needs to be calibrated before transmission, such as center calibration, to prevent the wafer from being too far off-center and causing the robot to be unable to grab it when transferring the wafer.
  • the position of the wafer needs to be detected before calibration.
  • An existing wafer position detection method has the problem that the process chamber is difficult to seal and requires a cooling system.
  • the present application provides a wafer position detection device and a semiconductor device, which can improve the problems of the existing detection method that the process chamber is difficult to seal and requires a cooling system.
  • an embodiment of the present application provides a wafer position detection device, which is applied to a semiconductor chamber, wherein a carrying portion for carrying a wafer is provided in the semiconductor chamber; the wafer position detection device is arranged outside the semiconductor chamber, and the wafer position detection device includes a first annular slide rail, a second annular slide rail, a linear sensor transmitting end, a linear sensor receiving end, a driver and a processor;
  • the first annular slide rail and the second annular slide rail are arranged oppositely at upper and lower sides of the semiconductor chamber;
  • the linear sensor transmitting end is slidably connected to the first annular slide rail, and the linear sensor receiving end is slidably connected to the second annular slide rail; and the orthographic projection of the linear sensor transmitting end on the wafer and the orthographic projection of the linear sensor receiving end on the wafer are both partially connected to the wafer. overlapping;
  • the driver is used to drive the linear sensor transmitting end and the linear sensor receiving end to slide along the respective annular slide rails;
  • the processor is used to: control the driver to drive the linear sensor transmitting end and the linear sensor receiving end to slide synchronously along the annular slide rails where they are located; and control the linear sensor transmitting end to transmit a detection signal, and the linear sensor receiving end to receive the detection signal that is not blocked by the wafer; determine the center position of the wafer according to the detection signal received by the linear sensor receiving end; wherein the detection signal can penetrate the semiconductor chamber.
  • determining the center position of the wafer according to the detection signal received by the linear sensor receiving end specifically includes:
  • At least three position points are selected on the contour, and the center position of the wafer is calculated based on the at least three position points.
  • a notch mark is provided at the edge of the wafer, and the center angle corresponding to the notch mark is ⁇ 0 ; selecting at least three position points on the contour and calculating the center position of the wafer according to the at least three position points specifically includes:
  • the three third position points correspond to the three first position points one by one, and the central angle between each third position point and the corresponding first position point is equal to the second preset angle ⁇ 2 , ⁇ 0 ⁇ 2 ⁇ 120°- ⁇ 0 , and ⁇ 1 ⁇ 2 ;
  • the center position of the wafer is calculated based on the two positions with the smallest difference among the first center position, the second center position and the third center position.
  • a notch mark is provided at an edge of the wafer, and the processor is further configured to:
  • the azimuth angle of the notch mark relative to the center position of the circle is calculated.
  • calculating the azimuth angle of the notch mark relative to the center position of the circle according to the contour specifically includes:
  • the azimuth angle ⁇ M of the midpoint of the line connecting the starting position and the ending position relative to the center position of the circle is calculated according to the ⁇ S and the ⁇ F.
  • the processor is further configured to compare the determined center position of the wafer with a pre-stored target position to determine an offset between the center position of the wafer and the target position.
  • controlling the linear sensor receiving end to receive the detection signal that is not blocked by the wafer specifically includes:
  • the linear sensor receiving end is controlled to receive the detection signal once every time it moves a preset arc length, wherein the preset arc length is less than a preset calibration accuracy value.
  • the linear sensor transmitting end extends radially along the first annular slide rail, and a signal transmitting position is set every preset length
  • the linear sensor receiving end extends radially along the second annular slide rail, and is The preset length sets a signal receiving bit, and the signal receiving bit corresponds to the signal transmitting bit one by one, wherein the preset length is smaller than the preset calibration accuracy value.
  • the linear sensor emitting end is a linear light source
  • the linear sensor receiving end is a light sensor.
  • an embodiment of the present application provides a semiconductor device, comprising: a semiconductor chamber, a wafer transfer device, and a wafer position detection device as described in the above embodiments;
  • the wafer position detection device is used to detect the position of the wafer located in the semiconductor chamber
  • the wafer transport device is used to transport the wafer and perform position correction on the wafer according to the detection result of the wafer position detection device.
  • the linear sensor transmitting end and the linear sensor receiving end constitute a corresponding sensor, which are respectively located on the upper and lower sides of the wafer. Since the orthographic projection of the linear sensor transmitting end on the wafer and the orthographic projection of the linear sensor receiving end on the wafer partially overlap with the wafer, the edge of the wafer can be identified.
  • the linear sensor transmitting end and the linear sensor receiving end are driven by the processor to synchronously slide along the respective annular slide rails, so that the entire edge of the wafer can be scanned to determine the circumference of the wafer and then determine the center position of the wafer.
  • the wafer position detection device of the present application since the wafer is fixed in the semiconductor chamber, does not cause the problem of the connection part between the rotating shaft and the semiconductor chamber in the existing detection device that needs to be sealed; since the parts connected to the semiconductor chamber do not have a motor, even if it is used for high-temperature transmission, no cooling system assistance is required, which reduces the difficulty of maintenance.
  • FIG1 is a schematic structural diagram of a wafer position detection device in the related art
  • FIG2 is a schematic structural diagram of a wafer position detection device provided in an embodiment of the present application.
  • FIG. 3 is a schematic diagram of the structure of a control system of a wafer position detection device provided in an embodiment of the present application
  • FIG4 is a schematic diagram of a control flow of a processor provided in an embodiment of the present application.
  • FIG5 is a schematic flow chart of a method for determining a center position of a circle provided in an embodiment of the present application
  • FIG6 is a schematic diagram of the projection position relationship of a linear sensor transmitting end/linear sensor receiving end on a wafer provided by the present application;
  • FIG7 is a flow chart of a preferred method for calculating the center position of a circle provided in an embodiment of the present application.
  • FIG8 is a schematic diagram of taking three position points on a contour provided by an embodiment of the present application.
  • FIG9 is a schematic diagram of detecting the azimuth angle of a notch mark of a wafer provided in an embodiment of the present application.
  • FIG10 is a schematic diagram of a flow chart of calculating the azimuth angle of a notch mark relative to the center position provided in an embodiment of the present application;
  • FIG. 11 is a diagram of an application scenario of a semiconductor device provided in an embodiment of the present application.
  • A, B, C means “any one of the following: A; B; C; A and B; A and C; B and C; A and B and C
  • A, B or C or "A, B and/or C” means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C”. Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.
  • first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish the same type of information from each other.
  • first information may also be referred to as the second information
  • second information may also be referred to as the first information.
  • the terms used herein may be used to refer to the first information.
  • singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context indicates otherwise.
  • orientations or positional relationships indicated by terms such as “top”, “bottom”, “up”, “down”, “vertical”, and “horizontal” are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.
  • the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.
  • a wafer position detection device including a transparent process chamber 10a, a rotating platform 20a, a light source 30a, a light receiver 40a and a driving source 50a.
  • the rotating platform 20a is located in the process chamber 10a and is driven to rotate by an external driving source 50a.
  • the rotating platform 20a is used to fix the wafer 101a and drive the wafer 101a to rotate.
  • the light source 30a and the light receiver 40a are located on the upper and lower sides of the process chamber 10a.
  • the light source 30a projects the shadow of the wafer 101a onto one side of the light receiver 40a, and the light receiver 40a determines the edge information of the wafer 101a (such as edge image information), and calculates the center of the wafer 101a based on the determined edge information.
  • edge information such as edge image information
  • the connection portion between the rotating shaft 21a of the rotating platform 20a and the process chamber 10a needs to be sealed; and for high-temperature wafer transmission, the temperature of the wafer 101a is as high as over 800°C, which will cause the temperature of the process chamber 10a to be higher than 70°C, thereby requiring a special water cooling device, which increases the overall complexity of the equipment and the difficulty of maintenance.
  • Figure 2 is a schematic diagram of the structure of a wafer position detection device provided in an embodiment of the present application
  • Figure 3 is a schematic diagram of the structure of a control system of a wafer position detection device provided in an embodiment of the present application.
  • the wafer position detection device provided in an embodiment of the present application is applied to a semiconductor chamber 10 to detect the position of a wafer 101 in the semiconductor chamber 10, wherein the wafer 101 is located on a carrier 20 in the semiconductor chamber 10.
  • the wafer position detection device may include: a first annular slide rail 801 , a second annular slide rail 802 , a linear sensor transmitting end 30 , a linear sensor receiving end 40 , a driver 60 and a processing module 70 .
  • the first annular slide rail 801 and the second annular slide rail 802 are relatively arranged at the upper and lower sides of the semiconductor chamber 10.
  • the first annular slide rail 801 can be located above the semiconductor chamber 10, and the second annular slide rail 802 is correspondingly located below the semiconductor chamber 10; the first annular slide rail 801 can also be located below the semiconductor chamber 10, and the second annular slide rail 802 is correspondingly located above the semiconductor chamber 10.
  • the linear sensor transmitting end 30 is slidably connected to the first annular slide rail 801, and the linear sensor receiving end 40 is slidably connected to the second annular slide rail 802; and the orthographic projection of the linear sensor transmitting end 30 on the wafer 101 and the orthographic projection of the linear sensor receiving end 40 on the wafer 101 both partially overlap with the wafer 101.
  • the radius of the first annular slide rail 801 and the radius of the second annular slide rail 802 can be designed according to the size of the wafer 101.
  • the driver 60 is used to drive the linear sensor transmitting end 30 and the linear sensor receiving end 40 to slide along the respective annular slide rails.
  • the processor 70 is used to: control the driver 60 to drive the linear sensor transmitting end 30 and the linear sensor receiving end 40 to slide synchronously along the respective annular slide rails; and control the linear sensor transmitting end 30 to transmit a detection signal and the linear sensor receiving end 40 to receive a detection signal that is not blocked by the wafer 101.
  • the processor 70 is also used to determine the center position of the wafer 101 based on the detection signal received by the linear sensor receiving end 40; wherein the detection signal can penetrate the semiconductor chamber 10.
  • the driver 60 may include a driving source, which drives the linear sensor transmitting end 30 and the linear sensor receiving end 40 to slide synchronously along the respective annular slide rails.
  • the driver 60 may include two driving sources, which can respectively drive the linear sensor transmitting end 30 and the linear sensor receiving end 40 to slide along the respective annular slide rails. In this case, the two driving sources can realize the synchronous sliding of the linear sensor transmitting end 30 and the linear sensor receiving end 40 along the respective annular slide rails under the control of the processor 70.
  • each driving source can also Under the control of the processor 70, the linear sensor transmitting end 30 or the linear sensor receiving end 40 is driven to slide along the annular slide rail.
  • the relative position of the linear sensor transmitting end 30 and the linear sensor receiving end 40 can be adjusted, so that the installation accuracy of the relative position of the linear sensor transmitting end 30 and the linear sensor receiving end 40 can be reduced, and it is ensured that the signal emitted by the linear sensor transmitting end 30 can be projected to the linear sensor receiving end 40 when it is not blocked by the wafer.
  • the linear sensor transmitting end 30 and the linear sensor receiving end 40 are two parts of a one-dimensional sensor (linear sensor), and the two constitute a counter-radiation sensor.
  • the linear sensor transmitting end 30 can transmit a detection signal over a certain one-dimensional length, that is, the detection signal has a certain length in a specified straight line direction, and the length extends, for example, along the radial direction of the bearing surface.
  • FIG2 shows only two arrows for the detection signals (S1 and S2) emitted by the linear sensor transmitting end 30 over a one-dimensional length that are blocked by the wafer 101 and are not blocked by the wafer 101.
  • the detection signal emitted by the linear sensor transmitting end 30 can penetrate the semiconductor chamber 10 and be received by the linear sensor receiving end 40.
  • the linear sensor transmitting end 30 can be a linear light source (one-dimensional light source), such as a linear light source formed by a plurality of LEDs or laser sensors arranged in a straight line.
  • a laser sensor is preferably used. Compared with an LED, a laser sensor is less disturbed by ambient light.
  • the line light source can emit a light signal to the linear sensor receiving end 40.
  • the bottom plate and the top plate of the semiconductor chamber 10 can be made of transparent materials (such as quartz) to allow the light signal to pass through.
  • the linear sensor receiving end 40 can include a plurality of sensors arranged along a straight line. Each sensor can receive the above signal.
  • the sensor can be a light sensor, such as a CCD (Charge-coupled Device) lens.
  • CCD Charge-coupled Device
  • the length of the linear sensor receiving end 40 can be greater than the length of the linear sensor transmitting end 30.
  • the installation position of the linear sensor transmitting end 30 can be configured as follows: a portion of the emitted detection signal (signal S1) is blocked by the wafer 101, and the other portion (signal S2) penetrates the semiconductor chamber 10 from the edge of the wafer 101 and is received by the linear sensor.
  • the linear sensor transmitting end 30 and the linear sensor receiving end 40 receive the signal. It is understandable that when the linear sensor transmitting end 30 and the linear sensor receiving end 40 move synchronously for one circle, a scan of the edge of the wafer 101 can be completed.
  • Fig. 4 is a schematic diagram of a control flow of a processor provided in an embodiment of the present application.
  • the processor 70 can detect the center position of the wafer 101 by executing steps S110 to S130.
  • the linear sensor transmitting end 30 and the linear sensor receiving end 40 form a pair of sensors, which are respectively located at the upper and lower sides of the wafer 101. Since the orthographic projection of the linear sensor transmitting end 30 on the wafer 101 and the orthographic projection of the linear sensor receiving end 40 on the wafer 101 partially overlap with the wafer 101, the edge of the wafer 101 can be identified.
  • the processor 70 controls the driver 60 to drive the linear sensor transmitting end 30 and the linear sensor receiving end 40 to slide synchronously along the respective annular slide rails, so that the entire edge of the wafer 101 can be scanned to determine the circumference of the wafer 101 and then determine the center position of the wafer 101.
  • the wafer position detection device of the present embodiment since the wafer 101 is fixed in the semiconductor chamber 10, the problem of sealing the connection part between the rotating shaft and the semiconductor chamber in the detection device of the related art will not occur; since the parts connected to the semiconductor chamber 10 have no motor, even if used for high-temperature transmission, no cooling system assistance is required, which reduces the difficulty of maintenance.
  • the processor 70 may also be configured to execute step S140.
  • the determined center position of the wafer can be compared with the pre-stored target position to determine the offset between the center position of the wafer and the target position, so that when the center position deviates from the target position, the subsequent wafer transmission process can calibrate the center position to the target position.
  • step S130 may include:
  • the linear sensor receiving end 40 does not receive a signal, and the area can be fed back as 0.
  • the linear sensor receiving end 40 can receive a signal, and the area can be fed back as 1.
  • the boundary point between 1 and 0 can be determined as the edge of the wafer 101.
  • FIG. 6 is a schematic diagram of the projection position relationship of a linear sensor transmitter/linear sensor receiver on a wafer provided by the present application.
  • a linear sensor with a length of 55mm can be used.
  • the projection of the linear sensor on the 8-inch wafer overlaps with the 8-inch wafer by a length of 40mm, and exceeds the edge of the 8-inch wafer by a length of 15mm, thereby ensuring that the linear sensor can perform edge scanning and recognition on wafers of both 6-inch and 8-inch sizes, thereby determining the wafer contour.
  • the length of the linear sensor can be further lengthened, or the radial position of the linear sensor along the wafer can be adjusted as needed to accommodate wafers of more sizes.
  • the processor 70 can control the linear sensor receiving end 40 to synchronize During circular motion, a detection signal is received once for each preset arc length of motion, wherein the preset arc length is less than the preset calibration accuracy value. That is, the amount of data processing is reduced while satisfying the calibration accuracy.
  • the coordinates of the 8192 points on the edge of the wafer can be recorded as (X 1 , Y 1 ), (X 2 , Y 2 )...(X 8192 , Y 8192 ) in sequence.
  • the linear sensor transmitting end 30 extends radially along the first annular slide rail 801, and a signal transmitting position is set at every preset length.
  • the linear sensor receiving end 40 extends radially along the second annular slide rail 802, and a signal receiving position is set at every preset length.
  • the signal receiving position corresponds to the signal transmitting position one by one, and the two form a corresponding reflection, wherein the preset length is less than the preset calibration accuracy value.
  • the linear sensor receiving end 40 as an example with a length of 55mm and a calibration accuracy of 0.1mm, at least 550 signal receiving points can be arranged on the linear sensor receiving end 40, and the distance between two adjacent signal receiving points is 0.1mm, thereby meeting the requirements of the recognition accuracy of the edge of the wafer.
  • three position points corresponding to signal 1 can be selected to calculate the center position of the wafer. It can be understood that three non-collinear points can determine a circle. Several additional positions corresponding to signal 1 can be selected to verify the calculation results; similarly, three position points corresponding to signal 0 can be selected at the boundary to calculate the center position of the wafer, and the midpoint of the two center positions calculated above can be used as the final center position to reduce the calculation error.
  • the wafer is generally provided with a notch mark (flat groove or V groove notch), that is, the outline of the wafer is not a complete circle, when three positions are randomly selected on the identified outline, the point at the notch mark may be selected, resulting in a large calculation error of the center position of the circle.
  • a notch mark flat groove or V groove notch
  • FIG. 7 is a relatively The flow chart of the method for calculating the optimal center position of the circle is as follows. Taking the center angle corresponding to the notch mark as ⁇ 0 as an example, the method for calculating the center position of the circle in step S132 may include:
  • Figure 8 is a schematic diagram of taking three position points on a contour provided by an embodiment of the present application. It can be understood that a first position point is selected every 120° on the contour, and the first center position can be calculated through the three first position points. Points are taken at 0°, 120 ° and 240 ° respectively, and the coordinates of the three first position points are: A1 ( X11 , Y11 ), A2 ( X12 , Y12 ), A3 ( X13 , Y13 ), and the corresponding coordinates of the first center position A10 are ( X10 , Y10 ) , and the coordinates of the first center position A0 can be calculated according to the following equations (1) to (3).
  • S1322 select three second position points on the contour, and calculate the second center position of the wafer, wherein the three second position points correspond to the three first position points one by one, and the center angle between each second position point and the corresponding first position point is equal to the first preset angle ⁇ 1 , and ⁇ 0 ⁇ 1 ⁇ 120°- ⁇ 0 .
  • the three second position points are equivalent to points obtained by rotating the three first position points by a certain angle ⁇ 1. Since ⁇ 0 is generally less than 2°, ⁇ 1 is usually greater than 2° and less than 118°.
  • the first preset angle ⁇ 1 can be 45°, which is equivalent to selecting three second position points from the corresponding positions on the contour after rotating the first position point A 1 (as the origin, 0° position) by 45°, 165°, and 285°.
  • the coordinates of the second center position A 2 0 of the wafer can be calculated as (X 2 0 , Y 2 0 ).
  • the specific calculation method can be referred to above and will not be described again here.
  • step S1323 can refer to the implementation example of step S1322, except that the second preset angle ⁇ 2 is different.
  • ⁇ 2 can be 90°. After rotating 90°, 210°, and 330° from the first position point A1 (as the origin, 0° position), three third position points are selected from corresponding positions on the contour, and the coordinates of the third center position A30 of the wafer are calculated to be ( X30 , Y30 ).
  • the center of the circle calculated three times in this embodiment since the angle ⁇ 1 of the second position point rotation and the angle ⁇ 2 of the third position point rotation satisfy ⁇ 0 ⁇ ( ⁇ 1 , ⁇ 2 ) ⁇ 120° - ⁇ 0 , and ⁇ 1 ⁇ ⁇ 2 , can ensure that among the three selected position points, at least two selected position points can avoid the notch mark of the wafer, so that the center of the wafer of the two calculation results basically coincides, and the center position of the wafer can be calculated with the two positions with the smallest difference.
  • the distances between the first center position, the second center position, and the third center position can be calculated, and the center position of the wafer can be calculated using the two positions with the smallest distance.
  • the first center position can be used as the center position of the wafer
  • the second center position can be used as the center position of the wafer
  • the midpoint between the first center position and the second center position can be used as the center position of the wafer.
  • the processor is further configured to execute step S133.
  • the intersection of the symmetry axis of the notch mark and the contour is used as the reference position for calculating the azimuth angle of the notch mark.
  • ⁇ M can be calculated based on the recognized contour.
  • step S133 may include the following steps S1331 to S1334 .
  • the ideal circle corresponding to the wafer can be determined.
  • the ideal circle is a complete circle corresponding to the contour (without wafer notch).
  • the arc corresponding to the notch mark can be restored according to the calculated center position and the radius of the wafer to obtain the coordinate data M 0 of the entire ideal circle.
  • the coordinate data M0 of the ideal circle and the coordinate data M1 of the contour may be ANDed (the boundary is regarded as "1"), and the starting point and the ending point of the gap mark may be determined according to the result of the operation, taking a clockwise operation as an example.
  • position C due to the existence of the gap mark, the result of the “AND” operation changes from 1 to 0, and it can be determined that position C is the starting point of the gap mark (X 1c , Y 1c ).
  • position D due to the existence of the gap mark, the result of the “AND” operation changes from 0 to 1, and it can be determined that position D is the end point of the gap mark (X 1d , Y 1d ).
  • the azimuth angles ⁇ S and ⁇ F of the starting point C and the ending point D relative to the circle center O can be calculated according to their coordinates.
  • Determining the azimuth angle of the wafer notch can facilitate subsequent accurate wafer transfer.
  • the embodiment of the present application also provides a semiconductor device, which includes a semiconductor chamber 10, a wafer transfer device, and a wafer position detection device as described in the above embodiments.
  • the wafer position detection device is used to detect the position of the wafer located in the semiconductor chamber 10; the wafer transfer device is used to transfer the wafer and perform position correction on the wafer according to the detection result of the wafer position detection device.
  • the wafer transfer device may include a robot 50 , and the processor 70 may control the robot 50 to grab the wafer 101 from the carrier 20 of the semiconductor chamber 10 .
  • the processor 70 can control the robot 50 to calibrate the center position to the target position. For example, the robot can adjust the X-direction position and the Y-direction position of the wafer 101 in the XY horizontal plane.
  • the processor 70 can control the robot 50 to calibrate the azimuth angle of the notch mark to the target angle.
  • the robot 50 can be controlled to rotate the wafer by - ⁇ M , that is, to rotate ⁇ M counterclockwise, so as to complete the azimuth angle calibration of the notch mark.
  • the robot 50 can also perform a rotation operation to calibrate the angle of the notch mark.
  • Figure 11 is an application scenario diagram of a semiconductor device provided in an embodiment of the present application, which includes a material box lifting system 100, an isolation chamber 200, a transfer chamber 300 and a process chamber 400 in sequence.
  • the semiconductor chamber 10 and the wafer position detection device of the above embodiment are arranged in the isolation chamber 200.
  • the cassette lifting system 100 is used to transport a wafer cassette loaded with wafers and can be lifted by a robot.
  • the wafer in the wafer box is transferred to the semiconductor chamber 10, and the position and angle of the wafer are detected by the wafer position detection device; the robot 50 in the transfer chamber 300 can grab the wafer from the semiconductor chamber 10, calibrate the position and angle of the wafer according to the detection result of the wafer position detection device, and transfer it to the transfer chamber 300 and the process chamber 400 in sequence.
  • multiple process chambers 400 can be set around the transfer chamber 300.

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Abstract

本申请公开了一种晶圆位置检测装置及半导体设备，晶圆位置检测装置的第一环形滑轨和第二环形滑轨相对的设置于半导体腔室的上下两侧；线性传感器发射端与第一环形滑轨滑动连接，线性传感器接收端与第二环形滑轨滑动连接；且线性传感器发射端在晶圆的正投影以及线性传感器接收端在晶圆的正投影均部分与晶圆重叠；处理器用于控制驱动器驱动线性传感器发射端和线性传感器接收端同步滑动；并控制线性传感器发射端发射检测信号，以及线性传感器接收端接收未被晶圆遮挡的检测信号；根据线性传感器接收端接收到的检测信号，确定晶圆的圆心位置；其中，检测信号能够穿透半导体腔室。本申请解决了现有的工艺腔室密封难和需冷却系统的问题。

Description

一种晶圆位置检测装置及半导体设备 技术领域
本申请涉及半导体制造技术领域，具体涉及一种晶圆位置校准检测装置及半导体设备。
背景技术
晶圆在传输前首先需要进行校准，比如圆心校准，以防止晶圆偏位太大造成机械手传片时无法抓取，而校准之前需要检测晶圆的位置。
现有的一种晶圆位置检测方法存在工艺腔室密封处理难且需冷却系统的问题。
发明内容
针对上述技术问题，本申请提供一种晶圆位置检测装置及半导体设备，可以改善现有的检测方法存在工艺腔室密封处理难且需冷却系统的问题。
为解决上述技术问题，第一方面，本申请实施例提供一种晶圆位置检测装置，应用于半导体腔室，所述半导体腔室内设置有用于承载晶圆的承载部；所述晶圆位置检测装置设置在所述半导体腔室的外侧，所述晶圆位置检测装置包括第一环形滑轨、第二环形滑轨、线性传感器发射端、线性传感器接收端、驱动器和处理器；
所述第一环形滑轨和所述第二环形滑轨相对设置于所述半导体腔室的上下两侧；
所述线性传感器发射端与所述第一环形滑轨滑动连接，所述线性传感器接收端与所述第二环形滑轨滑动连接；且所述线性传感器发射端在所述晶圆的正投影以及所述线性传感器接收端在所述晶圆的正投影均部分与所述晶圆 重叠；
所述驱动器用于驱动所述线性传感器发射端和所述线性传感器接收端沿各自所在的环形滑轨滑动；
所述处理器用于：控制所述驱动器驱动所述线性传感器发射端和线性传感器接收端沿各自所在的环形滑轨同步滑动；并控制所述线性传感器发射端发射检测信号，以及所述线性传感器接收端接收未被所述晶圆遮挡的检测信号；根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的圆心位置；其中，所述检测信号能够穿透所述半导体腔室。
在一些实施例中，所述根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的圆心位置，具体包括：
根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的轮廓；
在所述轮廓上选取至少三个位置点，根据所述至少三个位置点计算所述晶圆的圆心位置。
在一些实施例中，所述晶圆的边缘设置有缺口标识，并且所述缺口标识对应的圆心角为θ0；所述在所述轮廓上选取至少三个位置点，根据所述至少三个位置点计算所述晶圆的圆心位置，具体包括：
在所述轮廓上选取三个第一位置点，根据所述三个第一位置点计算所述晶圆的第一圆心位置，其中，所述三个第一位置点中任意两个相邻的第一位置点之间对应的圆心角为120°；
在所述轮廓上选取三个第二位置点，计算所述晶圆的第二圆心位置，其中，所述三个第二位置点与所述三个第一位置点一一对应，并且每个第二位置点与对应的第一位置点之间的圆心角等于第一预设角度θ1，并且θ0＜θ1≤120°-θ0；
在所述轮廓上选取三个第三位置点，计算所述晶圆的第三圆心位置，其 中，所述三个第三位置点与所述三个第一位置点一一对应，并且每个第三位置点与对应的第一位置点之间的圆心角等于第二预设角度θ2，θ0＜θ2≤120°-θ0，并且θ1≠θ2；
以所述第一圆心位置、所述第二圆心位置和所述第三圆心位置中差异最小的两个位置计算所述晶圆的圆心位置。
在一些实施例中，所述晶圆的边缘设置有缺口标识，所述处理器还用于：
根据所述轮廓，计算所述缺口标识相对于所述圆心位置的方位角。
在一些实施例中，所述根据所述轮廓，计算所述缺口标识相对于所述圆心位置的方位角，具体包括：
根据所述圆心位置以及所述晶圆的半径确定理想圆；
将所述理想圆与所述轮廓进行比较，确定所述缺口标识的起始位置和终止位置；
计算所述起始位置相对于所述圆心位置的方位角θS和所述终止位置相对于所述圆心位置的方位角θF；
根据所述θS和所述θF计算所述起始位置和所述终止位置的连线的中点相对于所述圆心位置的方位角θM。
在一些实施例中，所述处理器还用于将确定的所述晶圆的圆心位置与预存的目标位置进行比较，确定所述晶圆的圆心位置与所述目标位置的偏移量。
在一些实施例中，控制所述线性传感器接收端接收未被所述晶圆遮挡的检测信号；具体包括：
控制所述线性传感器接收端每运动预设弧长接收一次所述检测信号，其中，所述预设弧长小于预设校准精度值。
在一些实施例中，所述线性传感器发射端沿所述第一环形滑轨的径向延伸，并且每隔预设长度设置一个信号发射位；
所述线性传感器接收端沿所述第二环形滑轨的径向延伸，并且每隔所述 预设长度设置一个信号接收位，所述信号接收位与所述信号发射位一一对应，其中，所述预设长度小于所述预设校准精度值。
在一些实施例中，所述线性传感器发射端为线光源；
所述线性传感器接收端为光传感器。
第二方面，本申请实施例提供一种半导体设备，包括：半导体腔室、晶圆传输装置，以及如上各实施例所述的晶圆位置检测装置；
所述晶圆位置检测装置用于检测位于所述半导体腔室中的晶圆的位置；
所述晶圆传输装置用于传输所述晶圆，并根据所述晶圆位置检测装置的检测结果，对所述晶圆进行位置校正。
如上所述本申请的晶圆位置检测装置，线性传感器发射端和线性传感器接收端组成对射传感器，分别位于晶圆的上下两侧，由于线性传感器发射端在晶圆的正投影以及线性传感器接收端在晶圆的正投影均部分与晶圆重叠，从而可以对晶圆的边缘进行识别，通过处理器控制驱动器驱动线性传感器发射端和线性传感器接收端沿各自所在的环形滑轨同步滑动，从而可以实现对晶圆的整个边缘进行扫描，以确定晶圆的圆周并进而确定晶圆的圆心位置。本申请的晶圆位置检测装置，由于晶圆在半导体腔室内固定不动，不会产生现有的检测装置中旋转轴与半导体腔室的连接部分需要进行密封处理的问题；由于与半导体腔室连接的零部件没有电机，即使用于高温传片也无需冷却系统辅助，降低了维护难度。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本申请的实施例，并与说明书一起用于解释本申请的原理。为了更清楚地说明本申请实施例的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员而言，在不付出创造性劳动性 的前提下，还可以根据这些附图获得其他的附图。
图1是相关技术的一种晶圆位置检测装置的结构示意图；
图2是本申请实施例提供的一种晶圆位置检测装置的结构示意图；
图3是本申请实施例提供的一种晶圆位置检测装置的控制系统的结构示意图；
图4是本申请实施例提供的一种处理器的控制流程示意图；
图5是本申请实施例提供的一种圆心位置的确定方法的流程示意图；
图6是本申请提供的一种线性传感器发射端/线性传感器接收端在晶圆上的投影位置关系示意图；
图7是本申请实施例提供的一种较佳的圆心位置的计算方法的流程示意图；
图8是本申请实施例提供的一种在轮廓上取三个位置点的示意图；
图9是本申请实施例提供的一种对晶圆的缺口标识的方位角进行检测的示意图；
图10是本申请实施例提供的一种计算缺口标识相对于圆心位置的方位角的流程示意图；
图11是本申请实施例提供的一种半导体设备的应用场景图。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。通过上述附图，已示出本申请明确的实施例，后文中将有更详细的描述。这些附图和文字描述并不是为了通过任何方式限制本申请构思的范围，而是通过参考特定实施例为本领域技术人员说明本申请的概念。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的 要素。以下示例性实施例中所描述的实施方式并不代表与本申请相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置和方法的例子。
需要说明的是，在本文中，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者装置不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者装置所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括该要素的过程、方法、物品或者装置中还存在另外的相同要素，此外，本申请不同实施例中具有同样命名的部件、特征、要素可能具有相同含义，也可能具有不同含义，其具体含义需以其在该具体实施例中的解释或者进一步结合该具体实施例中上下文进行确定。
应当进一步理解，术语“包含”、“包括”表明存在所述的特征、步骤、操作、元件、组件、项目、种类、和/或组，但不排除一个或多个其他特征、步骤、操作、元件、组件、项目、种类、和/或组的存在、出现或添加。本申请使用的术语“或”、“和/或”、“包括以下至少一个”等可被解释为包括性的，或意味着任一个或任何组合。例如，“包括以下至少一个：A、B、C”意味着“以下任一个：A；B；C；A和B；A和C；B和C；A和B和C”，再如，“A、B或C”或者“A、B和/或C”意味着“以下任一个：A；B；C；A和B；A和C；B和C；A和B和C”。仅当元件、功能、步骤或操作的组合在某些方式下内在地互相排斥时，才会出现该定义的例外。
应当理解，尽管在本文可能采用术语第一、第二、第三等来描述各种信息，但这些信息不应限于这些术语。这些术语仅用来将同一类型的信息彼此区分开。例如，在不脱离本文范围的情况下，第一信息也可以被称为第二信息，类似地，第二信息也可以被称为第一信息。取决于语境，在本文中所使 用的，单数形式“一”、“一个”和“该”旨在也包括复数形式，除非上下文中有相反的指示。
应当理解的是，术语“顶”、“底”、“上”、“下”、“竖直”、“水平”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
为了便于描述，以下各实施例中，均是以水平面和竖直方向形成的正交空间为例进行说明，该前提条件不应理解为对本申请的限制。
相关技术中，一种晶圆位置检测装置如图1所示，包括透明的工艺腔室10a、旋转平台20a、光源30a、光接收器40a和驱动源50a，旋转平台20a位于工艺腔室10a，由外部的驱动源50a驱动旋转，旋转平台20a用于固定晶圆101a并带动晶圆101a旋转，光源30a和光接收器40a位于工艺腔室10a的上下两侧，光源30a将晶圆101a的阴影投射到光接收器40a一侧，并由光接收器40a确定晶圆101a的边缘信息(例如边缘图像信息)，根据确定的边缘信息计算出晶圆101a的圆心。
由于旋转平台20a和驱动源50a分别位于工艺腔室10a的内部和外部，导致旋转平台20a的旋转轴21a与工艺腔室10a的连接部分需要进行密封处理；并且对于高温传片，晶圆101a的温度高达800℃以上，会导致工艺腔室10a的温度高于70℃，从而需要专门的水冷装置，增加了设备整体的复杂度和维护难度。
为了解决上述技术问题，请参阅图2和图3，图2是本申请实施例提供的一种晶圆位置检测装置的结构示意图，图3是本申请实施例提供的一种晶圆位置检测装置的控制系统的结构示意图。是本申请实施例提供的晶圆位置检测装置，应用于半导体腔室10，用于检测半导体腔室10中晶圆101的位置，其中，晶圆101位于半导体腔室10中的承载部20上。该晶圆位置检测 装置可以包括：第一环形滑轨801、第二环形滑轨802、线性传感器发射端30、线性传感器接收端40、驱动器60和处理模块70。
第一环形滑轨801和第二环形滑轨802相对设置于半导体腔室10的上下两侧。比如，第一环形滑轨801可以位于半导体腔室10的上方，相应地第二环形滑轨802位于半导体腔室10的下方；第一环形滑轨801也可以位于半导体腔室10的下方，相应地第二环形滑轨802位于半导体腔室10的上方。
线性传感器发射端30与第一环形滑轨801滑动连接，线性传感器接收端40与第二环形滑轨802滑动连接；且线性传感器发射端30在晶圆101的正投影以及线性传感器接收端40在晶圆101的正投影均部分与晶圆101重叠。可以理解的是，第一环形滑轨801的半径和第二环形滑轨802的半径可以根据晶圆101的尺寸进行设计。
驱动器60用于驱动线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨滑动。
处理器70用于：控制驱动器60驱动线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨同步滑动；并控制线性传感器发射端30发射检测信号以及线性传感器接收端40接收未被晶圆101遮挡的检测信号，处理器70还用于根据线性传感器接收端40接收到的检测信号，确定晶圆101的圆心位置；其中，检测信号能够穿透半导体腔室10。
在一些实施例中，驱动器60可以包括一个驱动源，该驱动源驱动线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨同步滑动。在另一些实施例中，驱动器60可以包括两个驱动源，两个驱动源可以分别驱动线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨滑动，此时两个驱动源可以在处理器70的控制下实现线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨同步滑动。此外，在需要调节线性传感器发射端30和线性传感器接收端40相对位置的情况下，各驱动源还可以 在处理器70的控制下单独驱动线性传感器发射端30或线性传感器接收端40沿所在的环形滑轨滑动。通过设置两个驱动源，可以调节线性传感器发射端30和线性传感器接收端40相对位置，从而可以减小线性传感器发射端30和线性传感器接收端40的相对位置的安装精度，以及确保线性传感器发射端30发射的信号在未被晶圆阻挡时，能够投射到线性传感器接收端40。
需要说明的是，线性传感器发射端30和线性传感器接收端40是一种一维传感器(线性传感器)的两部分，两者组成对射传感器。线性传感器发射端30可以在一定的一维长度上发射检测信号，即，该检测信号在指定直线方向上具有一定的长度，该长度例如沿该承载面的径向延伸。图2中只用两个箭头示出了线性传感器发射端30在一维长度上发射的被晶圆101阻挡和未被晶圆101阻挡的检测信号(S1和S2)，在未被晶圆101阻挡的情况下，线性传感器发射端30发射的检测信号能够穿透半导体腔室10，并被线性传感器接收端40接收。作为一个示例，线性传感器发射端30可以是线光源(一维光源)，比如多个LED或激光传感器沿直线排列形成的线光源，本实施例优选激光传感器，相比LED，激光传感器受环境光的干扰较小。线光源可以向线性传感器接收端40发射光信号，半导体腔室10的底板和顶板可以采用透明材料制作(比如石英)，以让光信号透过，线性传感器接收端40可以包括多个沿直线排列的传感器，每个传感器可以接收上述信号，该传感器可以是光传感器，比如CCD(Charge-coupled Device，电荷耦合器件)镜头，为了减小线性传感器发射端30和线性传感器接收端40的相对位置的安装精度，以及确保线性传感器发射端30发射的信号在未被晶圆阻挡时，能够投射到线性传感器接收端40，线性传感器接收端40的长度可以大于线性传感器发射端30的长度。此外，根据不同尺寸的晶圆，线性传感器发射端30的安装位置可以配置为：发射的检测信号中一部分(信号S1)被晶圆101遮挡，另一部分(信号S2)从晶圆101的边缘穿透半导体腔室10，被线性传感器接收 端40接收。可以理解的是，当线性传感器发射端30和线性传感器接收端40同步运动一周时，可以对晶圆101的边缘完成一次扫描。
作为一个示例，请参阅图4，图4是本申请实施例提供的一种处理器的控制流程示意图。处理器70通过执行步骤S110～步骤S130可以检测晶圆101的圆心位置。
S110、控制驱动器驱动线性传感器发射端和线性传感器接收端沿各自所在的环形滑轨同步滑动。
S120、控制线性传感器发射端发射检测信号，以及线性传感器接收端接收未被晶圆遮挡的检测信号。
S130、根据线性传感器接收端接收到的检测信号，确定晶圆的圆心位置。
本实施例的晶圆位置检测装置，线性传感器发射端30和线性传感器接收端40组成对射传感器，分别位于晶圆101的上下两侧，由于线性传感器发射端30在晶圆101的正投影以及线性传感器接收端40在晶圆101的正投影均部分与晶圆101重叠，从而可以对晶圆101的边缘进行识别，通过处理器70控制驱动器60驱动线性传感器发射端30和线性传感器接收端40沿各自所在的环形滑轨同步滑动，从而可以实现对晶圆101的整个边缘进行扫描，以确定晶圆101的圆周并进而确定晶圆101的圆心位置。本实施例的晶圆位置检测装置，由于晶圆101在半导体腔室10内固定不动，不会产生相关技术的检测装置中旋转轴与半导体腔室的连接部分需要进行密封处理的问题；由于与半导体腔室10连接的零部件没有电机，即使用于高温传片也无需冷却系统辅助，降低了维护难度。
容易理解的是，上述步骤S110和步骤S120一起执行，以实现对晶圆101的整个边缘进行扫描。
在一个实施例中，步骤S130之后，处理器70还可以用于执行步骤S140。
S140、将确定的晶圆的圆心位置与预存的目标位置进行比较，确定晶圆 的圆心位置与目标位置的偏移量。
计算出晶圆的圆心位置后，可以将确定的晶圆的圆心位置与预存的目标位置进行比较，确定晶圆的圆心位置与目标位置的偏移量，以便当圆心位置偏离目标位置时，后续传片的过程可以将圆心位置校准至目标位置。
在一个实施例中，请参阅图5，图5是本申请实施例提供的一种圆心位置的确定方法的流程示意图，具体来说，步骤S130可以包括：
S131、根据线性传感器接收端40接收到的检测信号，确定晶圆的轮廓。
比如，被晶圆101遮挡的区域，线性传感器接收端40未接收到信号，该区域可以反馈为0，没有被晶圆101遮挡的区域，线性传感器接收端40可以接收到信号，该区域可以反馈为1，1和0的分界点可以确定为晶圆101的边缘。当线性传感器发射端30和线性传感器接收端40同步运动对晶圆101的边缘扫描一周后，即可得到晶圆101的轮廓。
作为一个示例，请参阅图6，图6是本申请提供的一种线性传感器发射端/线性传感器接收端在晶圆上的投影位置关系示意图，当需要晶圆位置检测装置兼容对直径为6吋(半径D1＝75mm)和8吋(半径D2＝100mm)晶圆的轮廓识别时，可以采用长度为55mm的线性传感器(包括线性传感器发射端30/线性传感器接收端40)。以直径为6吋为例，线性传感器在6吋晶圆上的投影，与6吋晶圆重合的长度L1＝15mm，超出6吋晶圆边缘的长度L2＝40mm。当转换到8吋晶圆时，线性传感器在8吋晶圆上的投影，与8吋晶圆重合的长度为40mm，超出8吋晶圆边缘的长度为15mm，从而可以确保线性传感器能够对6吋和8吋两种尺寸的晶圆进行边缘扫描识别，从而确定晶圆轮廓。
当然，还可以根据需要，进一步加长线性传感器的长度，或者使线性传感器沿晶圆的径向位置可调节，以适应更多尺寸的晶圆。
为了减小数据处理量，处理器70可以控制线性传感器接收端40同步做 圆周运动时，每运动预设弧长接收一次检测信号，其中，预设弧长小于预设校准精度值。即在满足校准精度的前提下，减小数据处理量。以8吋晶圆(周长为628mm)、校准精度为0.1mm为例，则扫描一圈的过程中，可以取8192个点(接收信号8192次)，则预设弧长为628/8192＝0.077mm＜0.1mm，从而可以满足校准精度要求。其中晶圆边缘8192个点的坐标可以依次记为(X1，Y1),(X2，Y2).......(X8192，Y8192)。
为了满足对晶圆的边缘的识别精度(校准精度)要求，作为一个示例，线性传感器发射端30沿第一环形滑轨801的径向延伸，并且每隔预设长度设置一个信号发射位。线性传感器接收端40沿第二环形滑轨802的径向延伸，并且每隔预设长度设置一个信号接收位，信号接收位与信号发射位一一对应，两者形成对射，其中，预设长度小于预设校准精度值。比如，以线性传感器接收端40的长度为55mm、校准精度为0.1mm为例，可以在线性传感器接收端40上布置至少550个信号接收点，则相邻两个信号接收点的距离为0.1mm，从而可以满足对晶圆的边缘的识别精度要求。
S132、在轮廓上选取至少三个位置点，根据该至少三个位置点计算晶圆的圆心位置。
比如，可以在上述信号0、信号1的分界处，选取3个信号1对应的位置点计算晶圆的圆心位置。可以理解的是，3个不共线的点可以确定一个圆。还可以额外选择几个信号1对应的位置来检验计算结果；同理，也可以在上述分界处选取3个信号0对应的位置点计算晶圆的圆心位置，还可以采用上述计算出的两个圆心位置的中点作为最终的圆心位置，以减小计算误差。
由于晶圆上一般设置有缺口标识(平槽flat或V槽notch)，即晶圆的轮廓并非完整的圆，在识别的轮廓上随机选择3个位置点时，有可能会选到缺口标识处的点，从而造成圆心位置的计算误差较大。
作为一个优选实施例，请参阅图7，图7是本申请实施例提供的一种较 佳的圆心位置的计算方法的流程示意图，以缺口标识对应的圆心角为θ0为例，步骤S132的圆心位置的计算方法可以包括：
S1321、在轮廓上选取三个第一位置点，计算晶圆的第一圆心位置，其中，三个第一位置点中任意两个相邻的第一位置点之间对应的圆心角为120°。
请参阅图8，图8是本申请实施例提供的一种在轮廓上取三个位置点的示意图。可以理解的是，在轮廓上每隔120°选取一个第一位置点，通过三个第一位置点可以计算得到第一圆心位置。以0°、120°和240°的位置分别取点，三个第一位置点的坐标分别为：A1(X1 1,Y1 1)、A2(X1 2,Y1 2)、A3(X1 3,Y1 3)，对应的第一圆心位置A1 0坐标为(X1 0,Y1 0)，可以根据如下方程(1)～(3)计算第一圆心位置A0的坐标。
(X1 1-X1 0)2+(Y1 1-Y1 0)2＝R2         (1)
(X1 2-X1 0)2+(Y1 2-Y1 0)2＝R2          (2)
(X1 3-X1 0)2+(Y1 3-Y1 0)2＝R2          (3)
S1322、在轮廓上选取三个第二位置点，计算晶圆的第二圆心位置，其中，三个第二位置点与三个第一位置点一一对应，并且每个第二位置点与对应的第一位置点之间的圆心角等于第一预设角度θ1，并且θ0＜θ1≤120°-θ0。
可以理解的是，三个第二位置点相当于是在三个第一位置点的基础上旋转一定的角度θ1后所取的点。由于θ0一般小于2°，因此，通常θ1大于2°小于118°即可。比如第一预设角度θ1可以是45°，则相当于从第一位置点A1(作为原点，0°位置)旋转45°、165°、285°后从轮廓上对应位置选取三个第二位置点。
根据三个第二位置点，可以计算晶圆的第二圆心位置A2 0坐标为(X2 0,Y2 0)，具体计算方法可以参照上文，此处不再进行赘述。
S1323、在轮廓上选取三个第三位置点，计算晶圆的第三圆心位置，其中，三个第三位置点与三个第一位置点一一对应，并且每个第三位置点与对应的第一位置点之间的圆心角等于第二预设角度θ2，θ0＜θ2≤120°-θ0，并且θ1≠θ2。
步骤S1323的具体实施例可以参见步骤S1322的实施例，只是第二预设角度θ2大小不同，比如θ2可以是90°，从第一位置点A1(作为原点，0°位置)旋转90°、210°、330°后从轮廓上对应位置选取三个第三位置点，并计算晶圆的第三圆心位置A3 0坐标为(X3 0,Y3 0)。
S1324、以第一圆心位置、第二圆心位置和第三圆心位置之中差异最小的两个位置计算晶圆的圆心位置。
可以理解的是，本实施例三次计算的圆心，由于第二次取位置点旋转的角度θ1和第三次取位置点旋转的角度θ2，满足θ0＜(θ1,θ2)≤120°-θ0，并且θ1≠θ2，可以确保三次选取的位置点中，至少有两次选取的位置点能够避开晶圆的缺口标识，使得该两次的计算结果圆晶圆的圆心基本重合，以差异最小的两个位置计算晶圆的圆心位置即可。
因此，可以计算第一圆心位置、第二圆心位置和第三圆心位置两两之间的距离，以距离最小的两个位置计算晶圆的圆心位置。比如当第一圆心位置和第二圆心位置的距离最小时，可以将第一圆心位置作为晶圆的圆心位置，也可以将第二圆心位置作为晶圆的圆心位置，还可以将第一圆心位置和第二圆心位置的中点作为晶圆的圆心位置。本实施例采用三次计算圆心位置的方法，可以避免圆心位置计算误差过大。
在一个实施例中，处理器还用于执行步骤S133。
S133、根据轮廓，计算缺口标识相对于圆心位置的方位角。
以平槽缺口标识为例，以缺口标识的对称轴与轮廓的交点作为计算缺口标识的方位角的参考位置。请参阅图9，图9是本申请实施例提供的一种对 晶圆的缺口标识的方位角进行检测的示意图，对于图9中的平槽，缺口标识的参考位置为点E，缺口标识相对于圆心位置的方位角为θM。可以根据识别的轮廓计算θM。
作为一个示例，请参阅图10，图10是本申请实施例提供的一种计算缺口标识相对于圆心位置的方位角的流程示意图，步骤S133可以包括如下步骤S1331～步骤S1334。
S1331、根据圆心位置以及晶圆的半径确定理想圆。
由于晶圆的半径已知，晶圆的圆心位置已计算出，因而能够确定与晶圆对应的理想圆，理想圆为与轮廓对应的完整的圆(无晶圆缺口)。可以根据计算的圆心位置以及晶圆的半径，将缺口标识对应的圆弧进行复原，得出整个理想圆的坐标数据M0。
S1332、将理想圆与轮廓进行比较，确定缺口标识的起始位置和终止位置。
比如，可以将理想圆的坐标数据M0与轮廓的坐标数据M1进行“与”操作(边界视为“1”)，根据操作的结果确定缺口标识的起始点和结束点，以进行顺时针操作为例。
对于位置C，由于缺口标识的存在，进行“与”操作的结果由1变为0，可以判断位置C为缺口标识的起始点(X1c,Y1c)。
对于位置D，由于缺口标识的存在，进行“与”操作的结果由0变为1，可以判断位置D为缺口标识的结束点(X1d,Y1d)。
S1333、计算起始位置相对于圆心位置的方位角θS和终止位置相对于圆心位置的方位角θF。
以图9中B位置相对于圆心O的方位角为0°，则可以根据起始点C和结束点D的坐标分别计算两者相对于圆心O的方位角θS和θF。
S1334、根据θS和θF计算起始位置和终止位置的连线的中点相对于圆 心位置的方位角θM。
具体来说，起始位置C和终止位置D的连线的中点E相对于圆心位置的方位角为：θM＝(θS+θF)/2。
确定晶圆缺口的方位角可以方便后续进行精准传片。
本申请实施例还提供了一种半导体设备，该半导体设备包括半导体腔室10、晶圆传输装置、以及如上各实施例所述的晶圆位置检测装置。晶圆位置检测装置用于检测位于半导体腔室10中的晶圆的位置；晶圆传输装置用于传输晶圆，并根据晶圆位置检测装置的检测结果，对晶圆进行位置校正。
例如，请参阅图2和图3，晶圆传输装置可以包括机械手50，处理器70可以控制机械手50从半导体腔室10的承载部20上抓取晶圆101。
在一个实施例中，当处理器70计算得到的晶圆的圆心位置偏离预存的目标位置超过预设位置阈值时，处理器70可以控制机械手50将圆心位置校准至目标位置。比如机械手可以在XY水平面内对晶圆101进行X向位置和Y向位置的调整。
在一个实施例中，当处理器70计算得到的缺口标识相对于圆心位置的方位角偏离目标角度超过预设角度阈值时，处理器70可以控制机械手50将缺口标识的方位角校准至目标角度。比如，当缺口标识的目标角度为0°(参考图8)时，则可以控制机械手50将晶圆旋转-θM，即逆时针旋转θM，从而将缺口标识的方位角校准完毕。机械手50除了可以对晶圆进行平动操作以校准圆心位置，还可以进行旋转操作，对缺口标识的角度进行校准。
请参阅图11，图11是本申请实施例提供的一种半导体设备的应用场景图，依次包括料盒升降系统100、隔离腔室200、传输腔室300和工艺腔室400，上述实施例的半导体腔室10和晶圆位置检测装置设置于隔离腔室200内。
料盒升降系统100用于传输装载有晶圆的晶圆盒，并且可以通过机械手 将晶圆盒内的晶圆传输至半导体腔室10，并由晶圆位置检测装置检测该晶圆的位置和角度；传输腔室300中的机械手50可以从半导体腔室10中抓取晶圆，根据晶圆位置检测装置检测的结果对晶圆的位置和角度进行校准，并依次传输至传输腔室300和工艺腔室400。为了提高效率，传输腔室300的周围可以设置多个工艺腔室400。
有关本实施例半导体设备的其他工作原理和过程，参见前述本发明实施例关于晶圆位置检测装置的说明，此处不再赘述。
以上对本申请所提供的一种晶圆位置检测装置及半导体设备进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述。需要说明的是，在本申请中，对各个实施例的描述都各有侧重，某个实施例中没有详述或记载的部分，可以参见其它实施例的相关描述。
本申请技术方案的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本申请记载的范围。

Claims (10)

  1. 一种晶圆位置检测装置，应用于半导体腔室，其特征在于，所述半导体腔室内设置有用于承载晶圆的承载部；所述晶圆位置检测装置设置在所述半导体腔室的外侧，所述晶圆位置检测装置包括第一环形滑轨、第二环形滑轨、线性传感器发射端、线性传感器接收端、驱动器和处理器；
    所述第一环形滑轨和所述第二环形滑轨相对设置于所述半导体腔室的上下两侧；
    所述线性传感器发射端与所述第一环形滑轨滑动连接，所述线性传感器接收端与所述第二环形滑轨滑动连接；且所述线性传感器发射端在所述晶圆的正投影以及所述线性传感器接收端在所述晶圆的正投影均部分与所述晶圆重叠；
    所述驱动器用于驱动所述线性传感器发射端和所述线性传感器接收端沿各自所在的环形滑轨滑动；
    所述处理器用于：控制所述驱动器驱动所述线性传感器发射端和线性传感器接收端沿各自所在的环形滑轨同步滑动；并控制所述线性传感器发射端发射检测信号，以及所述线性传感器接收端接收未被所述晶圆遮挡的检测信号；根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的圆心位置；其中，所述检测信号能够穿透所述半导体腔室。
  2. 根据权利要求1所述的晶圆位置检测装置，其特征在于，所述根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的圆心位置，具体包括：
    根据所述线性传感器接收端接收到的所述检测信号，确定所述晶圆的轮廓；
    在所述轮廓上选取至少三个位置点，根据所述至少三个位置点计算所述晶圆的圆心位置。
  3. 根据权利要求2所述的晶圆位置检测装置，其特征在于，所述晶圆的边缘设置有缺口标识，并且所述缺口标识对应的圆心角为θ0；所述在所述轮廓上选取至少三个位置点，根据所述至少三个位置点计算所述晶圆的圆心位置，具体包括：
    在所述轮廓上选取三个第一位置点，根据所述三个第一位置点计算所述晶圆的第一圆心位置，其中，所述三个第一位置点中任意两个相邻的第一位置点之间对应的圆心角为120°；
    在所述轮廓上选取三个第二位置点，计算所述晶圆的第二圆心位置，其中，所述三个第二位置点与所述三个第一位置点一一对应，并且每个第二位置点与对应的第一位置点之间的圆心角等于第一预设角度θ1，并且θ0＜θ1≤120°-θ0；
    在所述轮廓上选取三个第三位置点，计算所述晶圆的第三圆心位置，其中，所述三个第三位置点与所述三个第一位置点一一对应，并且每个第三位置点与对应的第一位置点之间的圆心角等于第二预设角度θ2，θ0＜θ2≤120°-θ0，并且θ1≠θ2；
    以所述第一圆心位置、所述第二圆心位置和所述第三圆心位置中差异最小的两个位置计算所述晶圆的圆心位置。
  4. 根据权利要求2所述的晶圆位置检测装置，其特征在于，所述晶圆的边缘设置有缺口标识，所述处理器还用于：
    根据所述轮廓，计算所述缺口标识相对于所述圆心位置的方位角。
  5. 根据权利要求4所述的晶圆位置检测装置，其特征在于，所述根据所述轮廓，计算所述缺口标识相对于所述圆心位置的方位角，具体包括：
    根据所述圆心位置以及所述晶圆的半径确定理想圆；
    将所述理想圆与所述轮廓进行比较，确定所述缺口标识的起始位置和终 止位置；
    计算所述起始位置相对于所述圆心位置的方位角θS和所述终止位置相对于所述圆心位置的方位角θF；
    根据所述θS和所述θF计算所述起始位置和所述终止位置的连线的中点相对于所述圆心位置的方位角θM。
  6. 根据权利要求1-5任一项所述的晶圆位置检测装置，其特征在于，所述处理器还用于将确定的所述晶圆的圆心位置与预存的目标位置进行比较，确定所述晶圆的圆心位置与所述目标位置的偏移量。
  7. 根据权利要求1-5任一项所述的晶圆位置检测装置，其特征在于，控制所述线性传感器接收端接收未被所述晶圆遮挡的检测信号；具体包括：
    控制所述线性传感器接收端每运动预设弧长接收一次所述检测信号，其中，所述预设弧长小于预设校准精度值。
  8. 根据权利要求7所述的晶圆位置检测装置，其特征在于，所述线性传感器发射端沿所述第一环形滑轨的径向延伸，并且每隔预设长度设置一个信号发射位；
    所述线性传感器接收端沿所述第二环形滑轨的径向延伸，并且每隔所述预设长度设置一个信号接收位，所述信号接收位与所述信号发射位一一对应，其中，所述预设长度小于所述预设校准精度值。
  9. 根据权利要求1-5任一项所述的晶圆位置检测装置，其特征在于，所述线性传感器发射端为线光源；
    所述线性传感器接收端为光传感器。
  10. 一种半导体设备，其特征在于，包括：半导体腔室、晶圆传输装置， 以及如权利要求1-9任一项所述的晶圆位置检测装置；
    所述晶圆位置检测装置用于检测位于所述半导体腔室中的晶圆的位置；
    所述晶圆传输装置用于传输所述晶圆，并根据所述晶圆位置检测装置的检测结果，对所述晶圆进行位置校正。
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