WO2024254943A1 - 一种惯性传感器及其制备方法 - Google Patents

一种惯性传感器及其制备方法 Download PDF

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Publication number
WO2024254943A1
WO2024254943A1 PCT/CN2023/108541 CN2023108541W WO2024254943A1 WO 2024254943 A1 WO2024254943 A1 WO 2024254943A1 CN 2023108541 W CN2023108541 W CN 2023108541W WO 2024254943 A1 WO2024254943 A1 WO 2024254943A1
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layer
conductive layer
substrate
conductive
bonding
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English (en)
French (fr)
Inventor
钟浩明
陈秋玉
潘在祥
黎家健
占瞻
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Technologies Pte Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Technologies Pte Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C21/00—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00
    • G01C21/10—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration
    • G01C21/12—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning
    • G01C21/16—Navigation; Navigational instruments not provided for in groups G01C1/00 - G01C19/00 by using measurements of speed or acceleration executed aboard the object being navigated; Dead reckoning by integrating acceleration or speed, i.e. inertial navigation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G01C19/5783—Mountings or housings not specific to any of the devices covered by groups G01C19/5607 - G01C19/5719
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/0197—Processes for making multi-layered devices not provided for in groups B81C2201/0176 - B81C2201/0192
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/037—Thermal bonding techniques not provided for in B81C2203/035 - B81C2203/036

Definitions

  • the present invention relates to the technical field of micro-electromechanical systems, and in particular to an inertial sensor and a preparation method thereof.
  • an inertial sensor includes a movable conductive structure and an immovable conductive structure that are relatively arranged.
  • the movable conductive structure When the movable conductive structure is displaced, the distance between the movable conductive structure and the immovable conductive structure changes, so that a capacitance signal in a corresponding direction can be detected to realize inertia detection.
  • Inertial sensors continue to improve performance and smaller die size to enhance user experience and new applications.
  • shrinking the chip size without stacked device structures movable conductive structures tend to reduce surface area, resulting in reduced sensor performance.
  • the purpose of the present invention is to provide an inertial sensor and a method for preparing the same, so as to solve the technical problems in the prior art.
  • the present invention provides an inertial sensor, comprising:
  • the dielectric layer being stacked on the first substrate
  • a first conductive layer wherein the first conductive layer is stacked on the dielectric layer, and the first conductive layer has a plurality of first openings therein, and the plurality of first openings are distributed at intervals along a radial direction of the first conductive layer;
  • a plurality of second conductive layers wherein the plurality of second conductive layers are bonded to the first conductive layer through a bonding structure, and from bottom to top, there are gaps between adjacent second conductive layers, and adjacent second conductive layers are connected through connecting parts, and each second conductive layer has a plurality of second openings, and the plurality of second openings are spaced apart along the radial direction of the second conductive layer;
  • the second substrate is covered on the first substrate, and the second substrate and the first substrate form a closed space.
  • the connecting portion includes a plurality of first connectors, the plurality of first connectors are arranged at intervals along the radial direction of the second conductive layer, and the two ends of the first connectors are respectively connected to two adjacent second conductive layers.
  • the first connector corresponds to the position of the bonding structure.
  • the connecting portion further includes a plurality of second connectors, the plurality of second connectors are arranged at intervals along the radial direction of the second conductive layer, the two ends of the second connectors are respectively connected to two adjacent second conductive layers, and the width of the second connectors is smaller than the width of the first connectors.
  • the connecting portion is bonded and fixed to the second conductive layer.
  • the bonding structure includes a first bonding layer and a second bonding layer bonded to each other, the first bonding layer is stacked on top of the first conductive layer, and the second bonding layer is stacked on the bottom of the second conductive layer.
  • a groove is formed on the surface of the second substrate facing the first substrate.
  • the present invention further provides a method for preparing an inertial sensor, which is used to prepare the aforementioned inertial sensor, wherein the inertial sensor comprises:
  • the dielectric layer being stacked on the first substrate
  • a first conductive layer wherein the first conductive layer is stacked on the dielectric layer, and the first conductive layer has a plurality of first openings therein, and the plurality of first openings are distributed at intervals along a radial direction of the first conductive layer;
  • the multiple layers of second conductive layers are bonded to the first conductive layer through a bonding structure, from bottom to top, there are gaps between adjacent second conductive layers, adjacent second conductive layers are connected by connecting parts, each layer of the second conductive layer has a plurality of second openings, and the plurality of second openings are distributed at intervals along the radial direction of each layer of the second conductive layer;
  • the bonding structure comprises a first bonding layer and a second bonding layer which are bonded to each other, wherein the first bonding layer is stacked on the top of the first conductive layer, and the second bonding layer is stacked on the bottom of the second conductive layer;
  • the preparation method comprises the following steps:
  • the sacrificial layer is removed.
  • the present invention reduces the mold size to a smaller size compared with the traditional single-layer structure by setting a multi-layer second conductive layer, thereby reducing the manufacturing cost and improving the integration of the device with portable consumer applications.
  • the larger movable conductive structure has a larger surface area, which can improve the XY axis sensitivity.
  • FIG1 is a cross-sectional schematic diagram of an inertial sensor according to an embodiment of the present invention.
  • an embodiment of the present invention provides an inertial sensor, which includes, from bottom to top, a first substrate 1, a dielectric layer 2, a first conductive layer 3, a bonding structure 8, a multi-layer second conductive layer 5 and a second substrate 9, wherein:
  • the first substrate 1 is a semiconductor substrate, such as a silicon substrate. In a feasible implementation, the first substrate 1 is circular. Those skilled in the art will appreciate that the first substrate 1 may also be in other shapes, such as a square, etc., which is not limited here.
  • the dielectric layer 2 is stacked on the first substrate 1.
  • the shape of the dielectric layer 2 is adapted to the shape of the first substrate 1.
  • the dielectric layer 2 is used to support the first conductive layer 3 and realize electrical isolation between the first conductive layer 3 and the first substrate 1.
  • the dielectric layer 2 is made of silicon dioxide.
  • the first conductive layer 3 is stacked on the dielectric layer 2.
  • the shape of the first conductive layer 3 is adapted to the shape of the dielectric layer 2.
  • the first conductive layer 3 has a plurality of first openings 4.
  • the first openings 4 are annular groove structures.
  • the plurality of first openings 4 are arranged in sequence with the axis of the first conductive layer 3 as the center.
  • the inner diameters of adjacent first openings 4 may be the same or different, which is not limited here.
  • the first conductive layer 3 is made of a conductive material, such as polysilicon.
  • the multiple layers of second conductive layers 5 are bonded to the first conductive layer 3 through a bonding structure 8. From bottom to top, there are gaps between adjacent second conductive layers 5 to provide space for the second conductive layers 5 to deform. Adjacent second conductive layers 5 are connected by connecting parts 7. Each second conductive layer 5 has a plurality of second openings 6. The second openings 6 are annular groove structures. The plurality of second openings 6 are arranged in sequence with the axis of the second conductive layer 5 as the center. The inner diameters of adjacent second openings 6 may be the same or different, which is not limited here.
  • the second conductive layer 5 is made of a conductive material, such as polysilicon.
  • the second substrate 9 is covered on the first substrate 1.
  • the second substrate 9 is a semiconductor substrate, such as a silicon substrate.
  • the second substrate 9 is circular.
  • the second substrate 9 may also be in other shapes, such as a square, etc., which are not limited here.
  • the second substrate 9 and the first substrate 1 form a closed space, so that the internal structure of the inertial sensor is protected from interference from the external environment, making it easier to control the air pressure in the cavity and improving working stability.
  • the mold size is reduced to a smaller size, the manufacturing cost is reduced, and the integration of the device with portable consumer applications is improved.
  • the larger movable conductive structure has a larger surface area, which can improve the XY axis sensitivity.
  • the connecting portion 7 includes a plurality of first connecting bodies 71, and the plurality of first connecting bodies 71 are arranged at intervals along the radial direction of the second conductive layer 5.
  • the two ends of the first connecting body 71 are respectively connected to two adjacent second conductive layers 5.
  • the first connecting body 71 plays a role of supporting, fixing and electrically connecting. In the horizontal direction, a preset distance is maintained between adjacent first connecting bodies 71, and in the vertical direction, there is a gap between adjacent second conductive layers 5, thereby providing the second conductive layer 5 with a certain deformation space.
  • the position of the first connector 71 corresponds to the bonding structure 8, a cavity is formed between adjacent bonding structures 8, and the second conductive layer 5 located above the cavity is a movable mass block 11.
  • the connection position of the first connector 71 is set corresponding to the position of the bonding structure 8 from bottom to top, so that the displacement process of the movable mass blocks 11 of multiple second conductive layers 5 will tend to be consistent, which can effectively improve the sensitivity and reliability of the inertial sensor.
  • the connecting portion 7 also includes a plurality of second connectors 72, and the plurality of second connectors 72 are arranged at intervals along the radial direction of the second conductive layer 5.
  • the two ends of the second connector 72 are respectively connected to two adjacent second conductive layers 5.
  • the width of the second connector 72 is smaller than the width of the first connector 71.
  • the second connector 72 can improve the connection reliability between the two adjacent second conductive layers 5.
  • the second conductive layer 5 forms a larger surface area, and the flexibility of the second conductive layer 5 is better guaranteed.
  • a plurality of second connectors 72 are disposed near the edge of the second conductive layer 5. Since the deflection of the second conductive layer 5 is parabolic, the deflection of the second conductive layer 5 at the center position is the largest, and the deflection of the second conductive layer 5 at the edge position is smaller.
  • the second connectors 72 are disposed at the location where the movement of the second conductive layer 5 is the smallest, thereby improving the sensitivity of the inertial sensor.
  • the first connector 71 and the second connector 72 are both made of conductive materials, such as polysilicon, and the connecting portion 7 is bonded and fixed to the second conductive layer 5. This makes it easy to manufacture, and up to two or more layers can continue to be stacked in the device structure.
  • the bonding structure 8 includes a first bonding layer 81 and a second bonding layer 82 that are bonded to each other.
  • the first bonding layer 81 is stacked on the top of the first conductive layer 3, and the second bonding layer 82 is stacked on the bottom of the second conductive layer 5.
  • the first bonding layer 81 and the second bonding layer 82 are both ring structures.
  • the first bonding layer 81 and the second bonding layer 82 are both made of metal to form metal hot pressing bonding.
  • the present invention further provides a method for preparing an inertial sensor, the method comprising the following steps:
  • a resist layer is formed on the bottom surface of the second substrate 9, the resist layer is patterned by a photolithography process to form a mask, and the second substrate 9 is etched through the mask to form a groove 10.
  • a second conductive layer 5 is formed on the second substrate 9 by deposition, a resist layer is deposited on the surface of the second conductive layer 5, the resist layer is patterned by a photolithography process to form a mask, and the second conductive layer 5 is etched through the mask to form a second opening 6 penetrating the second conductive layer 5.
  • the material of the sacrificial layer 12 may be PSG.
  • the sacrificial layer 12 is deposited to a certain thickness and then removed later to form a gap between the two second conductive layers 5 .
  • two second conductive layers 5 are provided. Those skilled in the art will appreciate that more second conductive layers 5 may be provided, which is not limited herein.
  • a resist layer is deposited on the surface of the second conductive layer 5, the resist layer is patterned using a photolithography process to form a mask, and the second conductive layer 5 is etched through the mask to form a second opening 6 penetrating the second conductive layer 5.
  • the first connector 71 and the second connector 72 are fixed to two adjacent second conductive layers 5 by bonding, and multiple first connectors 71 are arranged in a ring-shaped manner with the axis of the second conductive layer 5 as the center, and multiple second connectors 72 are arranged at the edge of the second conductive layer 5 and located between the two first connectors 71.
  • a second bonding layer 82 is formed on the surface of the second conductive layer 5 by, for example, deposition and etching.
  • S106 forming a dielectric layer 2 and a first conductive layer 3 on the first substrate 1, and forming a first opening 4 on the first conductive layer 3;
  • a dielectric layer 2 is formed on the first substrate 1 by deposition, a first conductive layer 3 is formed on the dielectric layer 2 by deposition, a resist layer is deposited on the surface of the first conductive layer 3, the resist layer is patterned by a photolithography process to form a mask, and the first conductive layer 3 is etched through the mask to form a first opening 4 penetrating the first conductive layer 3.
  • a first bonding layer 81 is formed on the surface of the first conductive layer 3 by, for example, deposition and etching.

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Abstract

本发明公开了一种惯性传感器及其制备方法，惯性传感器包括：第一衬底；介质层；第一导电层，第一导电层内具有若干第一开口；多层第二导电层，多层第二导电层通过键合结构键合于第一导电层上，自下而上，相邻的第二导电层之间具有间隙，相邻的第二导电层之间通过连接部连接，每层第二导电层上具有若干第二开口；第二衬底，第二衬底盖合于第一衬底上，第二衬底与第一衬底之间合围形成密闭空间。与现有技术相比，本发明通过设置多层第二导电层，与传统的单层结构相比，模具尺寸缩小到更小的尺寸，降低了制造成本，改善了设备与便携式消费应用的集成，同时较大的可移动导电结构具有更大的表面积，能够提高XY轴灵敏度。

Description

一种惯性传感器及其制备方法 技术领域
本发明涉及微机电系统技术领域，特别是一种惯性传感器及其制备方法。
 背景技术
现有技术中，惯性传感器包括相对设置的可移动导电结构以及不可移动导电结构，可移动导电结构产生位移时，改变与不可移动导电结构之间的间距，从而可以检测到对应方向的电容信号，以实现对惯性的检测。
惯性传感器不断提高性能和更小的模具尺寸，以增强用户体验和新应用，通过在没有堆叠设备结构的情况下缩小芯片尺寸，可移动导电结构往往会减少表面积，导致传感器性能下降。
 技术问题
本发明的目的是提供一种惯性传感器及其制备方法，以解决现有技术中的技术问题。
 技术解决方案
第一方面，本发明提供了一种惯性传感器，包括：
第一衬底；
介质层，所述介质层层叠于所述第一衬底上；
第一导电层，所述第一导电层层叠于所述介质层上，所述第一导电层内具有若干第一开口，若干所述第一开口沿所述第一导电层的径向间隔分布；
多层第二导电层，多层所述第二导电层通过键合结构键合于所述第一导电层上，自下而上，相邻的第二导电层之间具有间隙，相邻的所述第二导电层之间通过连接部连接，每层所述第二导电层上具有若干第二开口，若干所述第二开口沿所述第二导电层的径向间隔分布；
第二衬底，所述第二衬底盖合于所述第一衬底上，所述第二衬底与所述第一衬底之间合围形成密闭空间。
如上所述的一种惯性传感器，其中，优选的是，所述连接部包括若干第一连接体，若干第一连接体沿着所述第二导电层的径向间隔设置，所述第一连接体的两端分别连接相邻的两个所述第二导电层。 
如上所述的一种惯性传感器，其中，优选的是，所述第一连接体与所述键合结构的位置相对应。
如上所述的一种惯性传感器，其中，优选的是，所述连接部还包括若干第二连接体，若干所述第二连接体沿着所述第二导电层的径向间隔设置，所述第二连接体的两端分别连接相邻的两个所述第二导电层，所述第二连接体的宽度小于所述第一连接体的宽度。
如上所述的一种惯性传感器，其中，优选的是，若干所述第二连接体靠近所述第二导电层的边缘设置。 
如上所述的一种惯性传感器，其中，优选的是，所述第一连接体与所述第二连接体均为导电材料制成。 
如上所述的一种惯性传感器，其中，优选的是，所述连接部与所述第二导电层粘接固定。
如上所述的一种惯性传感器，其中，优选的是，所述键合结构包括键合连接的第一键合层以及第二键合层，所述第一键合层层叠于所述第一导电层的顶部，所述第二键合层层叠于所述第二导电层的底部。
如上所述的一种惯性传感器，其中，优选的是，所述第二衬底的面向所述第一衬底的表面上凹陷形成有凹槽。
第二方面，本发明还提供了一种惯性传感器的制备方法，用于制备前述的惯性传感器，所述惯性传感器包括：
第一衬底；
介质层，所述介质层层叠于所述第一衬底上；
第一导电层，所述第一导电层层叠于所述介质层上，所述第一导电层内具有若干第一开口，若干所述第一开口沿所述第一导电层的径向间隔分布；
多层第二导电层，多层所述第二导电层通过键合结构键合于所述第一导电层上，自下而上，相邻的第二导电层之间具有间隙，相邻的所述第二导电层之间通过连接部连接，每层所述第二导电层上具有若干第二开口，若干所述第二开口沿每层所述第二导电层的径向间隔分布；
所述键合结构包括键合连接的第一键合层以及第二键合层，所述第一键合层层叠于所述第一导电层的顶部，所述第二键合层层叠于所述第二导电层的底部；
第二衬底，所述第二衬底盖合于所述第一衬底上，所述第二衬底与所述第一衬底之间合围形成密闭空间；
所述制备方法包括以下步骤：
于所述第二衬底上形成一层所述第二导电层，在所述第二导电层上形成所述第二开口；
于所述第二导电层上沉积牺牲层；
于所述牺牲层上再形成一层所述第二导电层，在所述第二导电层上形成所述第二开口；
利用所述连接部连接相邻的所述第二导电层；
在所述第二导电层上形成所述第二键合层；
于所述第一衬底上形成所述介质层以及所述第一导电层，在所述第一导电层上形成所述第一开口；
于所述第一导电层上形成所述第一键合层；
将所述第一键合层和所述第二键合层高温键合，所述第二衬底与所述第一衬底之间合围形成密闭空间；
去除所述牺牲层。
 有益效果
与现有技术相比，本发明通过设置多层第二导电层，与传统的单层结构相比，模具尺寸缩小到更小的尺寸，降低了制造成本，改善了设备与便携式消费应用的集成，同时较大的可移动导电结构具有更大的表面积，能够提高XY轴灵敏度。
 附图说明
图1是本发明所提供实施例的惯性传感器的剖面示意图；
图2a-2c是本发明所提供实施例的惯性传感器的制备流程图。
附图标记说明：1-第一衬底，2-介质层，3-第一导电层，4-第一开口，5-第二导电层，6-第二开口，7-连接部，71-第一连接体，72-第二连接体，8-键合结构，81-第一键合层，82-第二键合层，9-第二衬底，10-凹槽，11-可动质量块,12-牺牲层。
 本发明的最佳实施方式
下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
如图1所示，本发明的实施例提供了一种惯性传感器，自下而上依次包括第一衬底1、介质层2、第一导电层3、键合结构8、多层第二导电层5以及第二衬底9，其中：
第一衬底1为半导体衬底，例如硅衬底，一种可行的实施方式中，第一衬底1为圆形，本领域的技术人员可以知晓，第一衬底1也可以为其他的形状，例如方形等，在此不做限定。
介质层2层叠于第一衬底1上，介质层2的形状与第一衬底1的形状相适应，介质层2用于支撑第一导电层3以及实现第一导电层3与第一衬底1之间的电性隔离，一种可行的实施方式中，介质层2的材质为二氧化硅。
第一导电层3层叠于介质层2上，第一导电层3的形状与介质层2的形状相适应，第一导电层3内具有若干第一开口4，第一开口4为环形槽结构，若干第一开口4以第一导电层3的轴线为中心依次间隔设置，相邻的第一开口4的内径可相同也可存在差异，在此不做限定，第一导电层3为导电材质，例如多晶硅。
多层第二导电层5通过键合结构8键合于第一导电层3上，自下而上，相邻的第二导电层5之间具有间隙，以提供第二导电层5发生变形的空间，相邻的第二导电层5之间通过连接部7连接，每层第二导电层5上具有若干第二开口6，第二开口6为环形槽结构，若干第二开口6以第二导电层5的轴线为中心依次间隔设置，相邻的第二开口6的内径可相同也可存在差异，在此不做限定，第二导电层5为导电材质，例如多晶硅。
第二衬底9盖合于第一衬底1上，第二衬底9为半导体衬底，例如硅衬底，一种可行的实施方式中，第二衬底9为圆形，本领域的技术人员可以知晓，第二衬底9也可以为其他的形状，例如方形等，在此不做限定，第二衬底9与第一衬底1之间合围形成密闭空间，从而使得惯性传感器内部的结构避免受到外界环境的干扰，便于控制腔体内的空气压力，提高工作稳定性。
上述实施例中，通过设置多层第二导电层5，与传统的单层结构相比，模具尺寸缩小到更小的尺寸，降低了制造成本，改善了设备与便携式消费应用的集成，同时较大的可移动导电结构具有更大的表面积，能够提高XY轴灵敏度。
进一步地，连接部7包括若干第一连接体71，若干第一连接体71沿着第二导电层5的径向间隔设置，第一连接体71的两端分别连接相邻的两个第二导电层5，第一连接体71起到了支撑固定以及电性连接的作用，在水平方向上，相邻的第一连接体71之间保持有预设的距离，在垂直方向上，相邻的第二导电层5之间具有间隙，从而可以提供第二导电层5一定的变形空间。
一种可行的实施方式中，参照图1所示，第一连接体71与键合结构8的位置相对应，相邻的键合结构8之间形成空腔，位于空腔上方的第二导电层5为可动质量块11，可动质量块11产生位移时，改变与第一导电层3之间的间距，从而可以检测到对应方向的电容信号，以实现对惯性的检测，将第一连接体71的连接位置与键合结构8的位置自下而上对应设置，这样多个第二导电层5的可动质量块11的位移过程将趋于一致，可以有效提高惯性传感器的灵敏度以及可靠性。
参照图1所示，连接部7还包括若干第二连接体72，若干第二连接体72沿着第二导电层5的径向间隔设置，第二连接体72的两端分别连接相邻的两个第二导电层5，第二连接体72的宽度小于第一连接体71的宽度，一方面第二连接体72可以提高相邻的两个第二导电层5之间的连接可靠性，另一方面，通过将第二连接体72设置的比第一连接体71窄，第二导电层5形成更大的表面积，第二导电层5的柔顺性得到较好的保障。
进一步地，参照图1所示，若干第二连接体72靠近第二导电层5的边缘设置，由于第二导电层5的挠度是抛物线形的，在圆心位置处的第二导电层5的挠度最大，在边缘位置处的第二导电层5的挠度较小，将第二连接体72设置在第二导电层5运动最小的地方，从而可以提高惯性传感器的灵敏度。 
本申请所提供的实施例中，第一连接体71与第二连接体72均为导电材料制成，例如多晶硅，连接部7与第二导电层5粘接固定，这样易于制造，设备结构内可以继续堆叠多达两层或更多层。
参照图1所示，键合结构8包括键合连接的第一键合层81以及第二键合层82，第一键合层81层叠于第一导电层3的顶部，第二键合层82层叠于第二导电层5的底部，第一键合层81以及第二键合层82均为环体结构，第一键合层81以及第二键合层82均为金属材质，以形成金属热压键合。
基于以上实施例，参照图2a-2c所示，本发明还提供了一种惯性传感器的制备方法，制备方法包括以下步骤：
S101：于第二衬底9上形成一层第二导电层5，在第二导电层5上形成第二开口6；
该步骤中，在第二衬底9的底面形成抗蚀剂层，采用光刻工艺图形化抗蚀剂层以形成掩模，以及经由掩模刻蚀第二衬底9，以形成凹槽10。在第二衬底9上通过沉积形成第二导电层5，在第二导电层5的表面沉积形成抗蚀剂层，采用光刻工艺图形化抗蚀剂层以形成掩模，以及经由掩模刻蚀第二导电层5，以形成贯穿第二导电层5的第二开口6。
S102：第二导电层5上沉积牺牲层12；
该步骤中，牺牲层12的材料可以是PSG，通过沉积一定厚度的牺牲层12，在后期去除牺牲层12，以在两个第二导电层5之间形成间隙。
S103：于牺牲层12上再形成一层第二导电层5，在第二导电层5上形成第二开口6；
本申请实施例中，共设有两层第二导电层5，本领域的技术人员可以知晓，第二导电层5可以设置的更多，在此不做限定，该步骤中，在第二导电层5的表面沉积形成抗蚀剂层，采用光刻工艺图形化抗蚀剂层以形成掩模，以及经由掩模刻蚀第二导电层5，以形成贯穿第二导电层5的第二开口6。
S104：利用连接部7连接相邻的第二导电层5；
该步骤中，第一连接体71以及第二连接体72利用粘结方式固定两个相邻的第二导电层5，多个第一连接体71以第二导电层5的轴线为中心环形间隔设置，多个第二连接体72设置在第二导电层5的边缘，位于两个第一连接体71之间。
S105：在第二导电层5上形成第二键合层82；
该步骤中，在第二导电层5的表面例如通过淀积和刻蚀形成的第二键合层82。
S106：于第一衬底1上形成介质层2以及第一导电层3，在第一导电层3上形成第一开口4；
该步骤中，在第一衬底1上通过沉积形成介质层2，在介质层2上通过淀积形成第一导电层3，在第一导电层3的表面沉积形成抗蚀剂层，采用光刻工艺图形化抗蚀剂层以形成掩模，以及经由掩模刻蚀第一导电层3，以形成贯穿第一导电层3的第一开口4。
S107：于第一导电层3上形成第一键合层81；
该步骤中，在第一导电层3的表面例如通过淀积和刻蚀形成的第一键合层81。
S108：将第一键合层81和第二键合层82高温键合，第二衬底9与第一衬底1之间合围形成密闭空间；
S109：去除牺牲层12。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (10)

  1. 一种惯性传感器，其特征在于，包括：
    第一衬底；
    介质层，所述介质层层叠于所述第一衬底上；
    第一导电层，所述第一导电层层叠于所述介质层上，所述第一导电层内具有若干第一开口，若干所述第一开口沿所述第一导电层的径向间隔分布；
    多层第二导电层，多层所述第二导电层通过键合结构键合于所述第一导电层上，自下而上，相邻的第二导电层之间具有间隙，相邻的所述第二导电层之间通过连接部连接，每层所述第二导电层上具有若干第二开口，若干所述第二开口沿所述第二导电层的径向间隔分布；
    第二衬底，所述第二衬底盖合于所述第一衬底上，所述第二衬底与所述第一衬底之间合围形成密闭空间。
  2. 根据权利要求1所述的惯性传感器，其特征在于：所述连接部包括若干第一连接体，若干第一连接体沿着所述第二导电层的径向间隔设置，所述第一连接体的两端分别连接相邻的两个所述第二导电层。 
  3. 根据权利要求2所述的惯性传感器，其特征在于：所述第一连接体与所述键合结构的位置相对应。
  4. 根据权利要求2所述的惯性传感器，其特征在于：所述连接部还包括若干第二连接体，若干所述第二连接体沿着所述第二导电层的径向间隔设置，所述第二连接体的两端分别连接相邻的两个所述第二导电层，所述第二连接体的宽度小于所述第一连接体的宽度。
  5. 根据权利要求4所述的惯性传感器，其特征在于：若干所述第二连接体靠近所述第二导电层的边缘设置。 
  6. 根据权利要求4所述的惯性传感器，其特征在于：所述第一连接体与所述第二连接体均为导电材料制成。 
  7. 根据权利要求4所述的惯性传感器，其特征在于：所述连接部与所述第二导电层粘接固定。
  8. 根据权利要求1所述的惯性传感器，其特征在于：所述键合结构包括键合连接的第一键合层以及第二键合层，所述第一键合层层叠于所述第一导电层的顶部，所述第二键合层层叠于所述第二导电层的底部。
  9. 根据权利要求1所述的惯性传感器，其特征在于：所述第二衬底的面向所述第一衬底的表面上凹陷形成有凹槽。
  10. 一种惯性传感器的制备方法，用于制备权利要求1-9任一项所述的惯性传感器，其特征在于，
    所述惯性传感器包括：
    第一衬底；
    介质层，所述介质层层叠于所述第一衬底上；
    第一导电层，所述第一导电层层叠于所述介质层上，所述第一导电层内具有若干第一开口，若干所述第一开口沿所述第一导电层的径向间隔分布；
    多层第二导电层，多层所述第二导电层通过键合结构键合于所述第一导电层上，自下而上，相邻的第二导电层之间具有间隙，相邻的所述第二导电层之间通过连接部连接，每层所述第二导电层上具有若干第二开口，若干所述第二开口沿每层所述第二导电层的径向间隔分布；
    所述键合结构包括键合连接的第一键合层以及第二键合层，所述第一键合层层叠于所述第一导电层的顶部，所述第二键合层层叠于所述第二导电层的底部；
    第二衬底，所述第二衬底盖合于所述第一衬底上，所述第二衬底与所述第一衬底之间合围形成密闭空间；
    所述制备方法包括以下步骤：
    于所述第二衬底上形成一层所述第二导电层，在所述第二导电层上形成所述第二开口；
    于所述第二导电层上沉积牺牲层；
    于所述牺牲层上再形成一层所述第二导电层，在所述第二导电层上形成所述第二开口；
    利用所述连接部连接相邻的所述第二导电层；
    在所述第二导电层上形成所述第二键合层；
    于所述第一衬底上形成所述介质层以及所述第一导电层，在所述第一导电层上形成所述第一开口；
    于所述第一导电层上形成所述第一键合层；
    将所述第一键合层和所述第二键合层高温键合，所述第二衬底与所述第一衬底之间合围形成密闭空间；
    去除所述牺牲层。
PCT/CN2023/108541 2023-06-15 2023-07-21 一种惯性传感器及其制备方法 Ceased WO2024254943A1 (zh)

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CN114506812A (zh) * 2021-12-27 2022-05-17 杭州士兰微电子股份有限公司 一种惯性传感器及其制备方法

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