WO2024239374A1 - 一种mems传感器及其制备方法 - Google Patents

一种mems传感器及其制备方法 Download PDF

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Publication number
WO2024239374A1
WO2024239374A1 PCT/CN2023/098007 CN2023098007W WO2024239374A1 WO 2024239374 A1 WO2024239374 A1 WO 2024239374A1 CN 2023098007 W CN2023098007 W CN 2023098007W WO 2024239374 A1 WO2024239374 A1 WO 2024239374A1
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Prior art keywords
movable mass
electrode layer
layer
mass block
preset gap
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PCT/CN2023/098007
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English (en)
French (fr)
Inventor
潘在祥
陈秋玉
黎家健
钟浩明
占瞻
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AAC Technologies Holdings Shenzhen Co Ltd
AAC Technologies Pte Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
AAC Technologies Pte Ltd
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Publication of WO2024239374A1 publication Critical patent/WO2024239374A1/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00166—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00531—Dry etching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0307—Anchors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/04—Electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0135—Controlling etch progression
    • B81C2201/014—Controlling etch progression by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal

Definitions

  • the present invention relates to the technical field of micro-electromechanical systems, in particular to a MEMS sensor and a preparation method thereof.
  • MEMS sensors such as microphones, pressure sensors, and inertial sensors
  • MEMS sensors use a single device layer and one or more sacrificial layers. Releasing the sacrificial layer allows the device layer to move. Without increasing the die size, single-piece device layer designs are approaching limitations in terms of performance, robustness, and sensibility. Therefore, the demand for dual-layer or multi-layer device structures continues to increase.
  • one possible process includes multi-epitaxial growth of the device layer, while other processes such as chemical vapor deposition (CVD) and silicon dioxide etching are used to achieve the dual device layer, but multi-epitaxial growth of the device layer requires a very high budget and may cause unexpected effects such as warping.
  • CVD chemical vapor deposition
  • silicon dioxide etching are used to achieve the dual device layer, but multi-epitaxial growth of the device layer requires a very high budget and may cause unexpected effects such as warping.
  • the object of the present invention is to provide a MEMS sensor and a method for preparing the same to solve the technical problems in the prior art, which can allow the design of multi-layer devices and further improve performance, reliability, complexity and mold size.
  • the present invention provides a MEMS sensor, comprising:
  • a bottom electrode layer and a top electrode layer are arranged at intervals, and a cavity is formed between the bottom electrode layer and the top electrode layer;
  • the device layer is accommodated in the cavity, and the device layer includes a plurality of movable mass blocks arranged at intervals.
  • the movable mass blocks are supported on the bottom electrode layer through anchor points.
  • a preset gap is formed between the movable mass blocks and the top electrode layer. There are differences in the preset gaps formed by different movable mass blocks.
  • the plurality of movable mass blocks include a first movable mass block, a second movable mass block and a third movable mass block, the second movable mass block is located between the first movable mass block and the third movable mass block, a first preset gap is formed between the first movable mass block and the top electrode layer, a second preset gap is formed between the second movable mass block and the top electrode layer, a third preset gap is formed between the third movable mass block and the top electrode layer, and there are differences in height values of the first preset gap, the second preset gap and the third preset gap.
  • the height value of the first preset gap, the height value of the third preset gap, and the height value of the second preset gap increase in sequence.
  • the height value of the first preset gap is the same as the height value of the third preset gap, and the height value of the second preset gap is greater than the height values of the first preset gap and the third preset gap.
  • the bottom of the first movable mass block and the third movable mass block are connected to one anchor point, and the bottom of the second movable mass block is connected to two anchor points.
  • a plurality of openings are formed on the top electrode layer, and the plurality of openings are distributed at intervals along the radial direction of the top electrode layer.
  • the present invention further provides a method for preparing a MEMS sensor, which is used to prepare the aforementioned MEMS sensor, comprising the following steps:
  • Step S1 forming a bottom electrode layer, a sacrificial layer, a device layer and a top electrode layer in sequence from bottom to top;
  • Step S2 etching the device layer to form a plurality of movable mass blocks arranged at intervals;
  • Step S3 releasing the sacrificial layer in the device layer.
  • step S1 includes:
  • Step 101 forming a bottom electrode layer
  • Step 102 forming a sacrificial layer on the bottom electrode layer, and etching a top surface of the sacrificial layer to form a stepped interface and a plurality of grooves;
  • Step 103 forming a device layer on the sacrificial layer, wherein the movable mass block of the device layer is stacked on the step interface, and the anchor point of the device layer is formed in the groove;
  • Step 104 Form the top electrode layer, and form a plurality of openings on the top electrode layer.
  • the device layer is etched by a DRIE process to form a plurality of movable mass blocks arranged at intervals.
  • the material of the device layer is lead zirconate titanate, aluminum nitride, barium titanate or a mixture of the above materials.
  • the present invention forms a differential output electrical signal by setting the device layer to a number of movable mass blocks arranged at intervals.
  • the preset gaps formed by different movable mass blocks are different. This allows greater design flexibility and provides the sensor with higher sensitivity and greater driving force. It can also reduce the mold size and achieve a more complex design with higher precision and miniaturization.
  • FIG1 is a cross-sectional schematic diagram of a MEMS sensor according to Embodiment 1 of the present invention.
  • FIG3 is a cross-sectional schematic diagram of a MEMS sensor according to Embodiment 2 of the present invention.
  • 4a-4c are flowcharts of the preparation of the MEMS sensor of the second embodiment provided by the present invention.
  • an embodiment of the present invention provides a MEMS sensor, including:
  • a bottom electrode layer 1 and a top electrode layer 2 are arranged at intervals, and a cavity 3 is formed between the bottom electrode layer 1 and the top electrode layer 2 .
  • the device layer 4 is accommodated in the cavity 3, and at least a portion of the device layer 4 is conductive, so that a capacitor is formed between the device layer 4 and the top electrode layer 2 opposite to the device layer 4.
  • the MEMS sensor when used as a microphone, when the microphone is powered on, the top electrode layer 2 and the device layer 4 will carry charges of opposite polarities, thereby forming a capacitor.
  • the device layer 4 vibrates under the action of sound waves, the distance between the top electrode layer 2 and the device layer 4 will change, thereby causing the capacitance of the capacitor to change, and then converting the sound wave signal into an electrical signal, thereby realizing the corresponding function of the microphone.
  • the device layer 4 includes a plurality of movable mass blocks 41 arranged at intervals, and the movable mass blocks 41 are supported on the bottom electrode layer 1 through anchor points 42, and a preset gap is formed between the movable mass blocks 41 and the top electrode layer 2. There are differences in the preset gaps formed by different movable mass blocks 41, thereby forming a differential output electrical signal.
  • This structure allows greater design flexibility and provides the sensor with higher sensitivity and greater driving force. It can also achieve a reduction in mold size, while achieving a more complex design with higher precision and miniaturization.
  • the capacitive microphone can obtain a higher signal-to-noise ratio, improve the ability to suppress linear distortion, and improve the anti-interference ability of the microphone, so that the signal transmission distance is longer and the audio performance of the microphone is better.
  • the plurality of movable mass blocks 41 include a first movable mass block 411, a second movable mass block 413 and a third movable mass block 415.
  • the second movable mass block 413 is located between the first movable mass block 411 and the third movable mass block 415.
  • a first preset gap 412 is formed between the first movable mass block 411 and the top electrode layer 2
  • a second preset gap 414 is formed between the second movable mass block 413 and the top electrode layer 2
  • a third preset gap 416 is formed between the third movable mass block 415 and the top electrode layer 2.
  • a first capacitor is formed between the first movable mass block 411 and the top electrode layer 2.
  • the capacitance of the first capacitor changes accordingly.
  • a second capacitor is formed between the second movable mass block 413 and the top electrode layer 2.
  • the capacitance of the second capacitor changes accordingly.
  • a third capacitor is formed between the third movable mass block 415 and the top electrode layer 2.
  • the capacitance of the third capacitor changes accordingly.
  • the value of ⁇ 0 ⁇ r is fixed, S is the area directly opposite to the two plates of the capacitor, d is the distance between the two plates, and when the surfaces of the first movable mass block 411, the second movable mass block 413 and the third movable mass block 415 are roughly the same, the larger the height value of the preset gap, the smaller the capacitance.
  • the initial capacitance value of the first capacitor formed by the first movable mass block 411 is the largest
  • the initial capacitance value of the third capacitor formed by the third movable mass block 415 is the second largest
  • the initial capacitance value of the third capacitor formed by the second movable mass block 413 is the smallest.
  • the second movable mass block 413 is located in the middle of the device layer 4, which is the most severely deformed part, thereby providing higher sensitivity and greater driving force.
  • the bottom of the first movable mass block 411 and the third movable mass block 415 are connected to an anchor point 42, and the bottom of the second movable mass block 413 is connected to two anchor points 42.
  • the first movable mass block 411, the second movable mass block 413, the third movable mass block 415 and the anchor points 42 can all be made of conductive materials.
  • the movable part of the second movable mass block 413 is located between the two anchor points 42.
  • the movable part of the second movable mass block 413 is bent and deformed, thereby changing the distance from the top electrode layer 2, and the capacitance of the second capacitor changes accordingly, and a differential output electrical signal is formed between the first capacitor, the second capacitor and the third capacitor.
  • the first movable mass block 411 and the third movable mass block 415 can also pivot around the anchor point 42, so that one end of the first movable mass block 411 and the third movable mass block 415 tilts upward and the other end tilts downward, thereby changing the distance between the top electrode layer 2, and the capacitance of the first capacitor and the third capacitor changes accordingly, forming a differential output electrical signal.
  • a plurality of openings 21 are formed on the top electrode layer 2.
  • the plurality of openings 21 are distributed at intervals along the radial direction of the top electrode layer 2.
  • the openings 21 are evenly distributed to provide channels for sound waves to pass through and to provide structural support for subsequent molding processes.
  • the preparation method of the MEMS sensor includes the following steps:
  • Step S1 As shown in FIG. 2a , a bottom electrode layer 1, a sacrificial layer 5, a device layer 4 and a top electrode layer 2 are sequentially formed from bottom to top.
  • the steps specifically include:
  • Step 101 a bottom electrode layer 1 is formed on a silicon substrate by electron beam stripping or magnetron sputtering.
  • the bottom electrode layer 1 is connected to a bottom electrode pad (not shown) via a bottom electrode lead (not shown).
  • the material of the bottom electrode layer 1 may be one or more of Al, Mo, W, Pt, Cu, Ag, Au, and ZrN, or other materials with good electrical conductivity.
  • Step 102 forming a sacrificial layer 5 on the bottom electrode layer 1, and etching the top surface of the sacrificial layer 5 to form a step interface and a plurality of grooves 51.
  • the material of the sacrificial layer 5 may be PSG.
  • a patterned hard mask is made on the sacrificial layer 5, and the grooves 51 are etched on the sacrificial layer 5 by dry etching or wet etching.
  • Step 103 forming a device layer 4 on the sacrificial layer 5, wherein the material of the device layer 4 is lead zirconium titanate, aluminum nitride, barium titanate or a mixture of the above materials, and the movable mass block 41 of the device layer 4 is stacked on the step interface to form a device layer 4 with a height difference, and the anchor point 42 of the device layer 4 is formed in the groove 51 and filled in the groove 51 until an electrical coupling is formed between the device layer 4 and the bottom electrode layer 1;
  • Step 104 forming a top electrode layer 2, the top electrode layer 2 is connected to a top electrode pad (not shown) through a bottom electrode lead (not shown), the material of the top electrode layer 2 may be one or more of Al, Mo, W, Pt, Cu, Ag, Au, ZrN, or other materials with good conductive properties, making a patterned hard mask on the top electrode layer 2, and etching the top electrode layer 2 to form an opening 21 by dry etching or wet etching.
  • Step S2 As shown in Figure 2b, the device layer 4 is etched to form a number of movable mass blocks 41 arranged at intervals.
  • the device layer 4 is etched by a DRIE (deep reactive ion etching) process.
  • DRIE deep reactive ion etching
  • a device layer with a multi-layer height structure can be achieved, allowing greater design flexibility, and providing higher sensitivity and greater driving force for the sensor. It can also achieve a reduction in mold size while achieving more complex designs with higher precision and miniaturization.
  • the same DRIE process steps can also be used to pattern the device layer while avoiding an increase in the number of thermal cycles.
  • the sacrificial layer 5 can be used as a hard mask to prevent the DRIE process from etching the bottom electrode layer 1.
  • the plurality of movable mass blocks 41 include a first movable mass block 411, a second movable mass block 413 and a third movable mass block 415, a first preset gap 412 is formed between the first movable mass block 411 and the top electrode layer 2, a second preset gap 414 is formed between the second movable mass block 413 and the top electrode layer 2, and a third preset gap 416 is formed between the third movable mass block 415 and the top electrode layer 2, and the height values of the first preset gap 412, the third preset gap 416 and the second preset gap 414 increase sequentially.
  • Step S3 as shown in FIG. 2 c , the sacrificial layer 5 in the device layer 4 is released to allow the device layer 4 to move.
  • the difference between this embodiment and embodiment one is that the height value of the first preset gap 412 is the same as the height value of the third preset gap 416, and the height value of the second preset gap 414 is greater than the height values of the first preset gap 412 and the third preset gap 416.
  • the initial capacitance value of the first capacitor formed by the first movable mass block 411 is the same, and the initial capacitance value of the third capacitor formed by the second movable mass block 413 is relatively small.
  • the second movable mass block 413 is located in the middle of the device layer 4, which is the most violently deformed part, thereby providing higher sensitivity and greater driving force.
  • the preparation method of the MEMS sensor includes the following steps:
  • Step S1 As shown in FIG. 4a , a bottom electrode layer 1, a sacrificial layer 5, a device layer 4 and a top electrode layer 2 are sequentially formed from bottom to top.
  • the steps are specifically as follows:
  • Step 101 a bottom electrode layer 1 is formed on a silicon substrate by electron beam stripping or magnetron sputtering.
  • the bottom electrode layer 1 is connected to a bottom electrode pad (not shown) via a bottom electrode lead (not shown).
  • the material of the bottom electrode layer 1 may be one or more of Al, Mo, W, Pt, Cu, Ag, Au, and ZrN, or other materials with good electrical conductivity.
  • Step 102 forming a sacrificial layer 5 on the bottom electrode layer 1, and etching the top surface of the sacrificial layer 5 to form a step interface and a plurality of grooves 51.
  • the material of the sacrificial layer 5 may be PSG.
  • a patterned hard mask is made on the sacrificial layer 5, and the grooves 51 are etched on the sacrificial layer 5 by dry etching or wet etching.
  • Step 103 forming a device layer 4 on the sacrificial layer 5, wherein the material of the device layer 4 is lead zirconium titanate, aluminum nitride, barium titanate or a mixture of the above materials, and the movable mass block 41 of the device layer 4 is stacked on the step interface to form a device layer 4 with a height difference, and the anchor point 42 of the device layer 4 is formed in the groove 51 and filled in the groove 51 until an electrical coupling is formed between the device layer 4 and the bottom electrode layer 1;
  • Step 104 forming a top electrode layer 2, the top electrode layer 2 is connected to a top electrode pad (not shown) through a bottom electrode lead (not shown), the material of the top electrode layer 2 may be one or more of Al, Mo, W, Pt, Cu, Ag, Au, ZrN, or other materials with good conductive properties, making a patterned hard mask on the top electrode layer 2, and etching the top electrode layer 2 to form an opening 21 by dry etching or wet etching.
  • Step S2 As shown in Figure 4b, the device layer 4 is etched to form a number of movable mass blocks 41 arranged at intervals.
  • the device layer 4 is etched by a DRIE (deep reactive ion etching) process.
  • DRIE deep reactive ion etching
  • a device layer with a multi-layer height structure can be achieved, allowing greater design flexibility, and providing higher sensitivity and greater driving force for the sensor. It can also achieve a reduction in mold size while achieving more complex designs with higher precision and miniaturization.
  • the same DRIE process steps can also be used to pattern the device layer while avoiding an increase in the number of thermal cycles.
  • the sacrificial layer 5 can be used as a hard mask to prevent the DRIE process from etching the bottom electrode layer 1.
  • the plurality of movable mass blocks 41 include a first movable mass block 411, a second movable mass block 413 and a third movable mass block 415.
  • a first preset gap 412 is formed between the first movable mass block 411 and the top electrode layer 2
  • a second preset gap 414 is formed between the second movable mass block 413 and the top electrode layer 2
  • a third preset gap 416 is formed between the third movable mass block 415 and the top electrode layer 2.
  • the height value of the first preset gap 412 is the same as the height value of the third preset gap 416
  • the height value of the second preset gap 414 is greater than the height values of the first preset gap 412 and the third preset gap 416.
  • Step S3 Referring to FIG. 4 c , the sacrificial layer 5 in the device layer 4 is released to allow the device layer 4 to move.

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Abstract

一种MEMS传感器及其制备方法，MEMS传感器包括：形成腔体（3）的底电极层（1）和顶电极层（2），收容于腔体（3）内的设备层（4），设备层（4）包括若干间隔设置的可动质量块（41），可动质量块（41）与顶电极层（2）之间形成预设间隙，不同可动质量块（41）所形成的预设间隙存在差异；MEMS传感器的制备方法包括：S1：自下而上依次形成底电极层（1）、牺牲层（5）、设备层（4）以及顶电极层（2）；S2：刻蚀所述设备层（4），以形成若干间隔设置的可动质量块（41）；S3：释放牺牲层（5）；通过预设间隙的差异形成差分输出的电信号，实现了MEMS传感器的高灵敏度和体积小型化。

Description

一种MEMS传感器及其制备方法 技术领域
本发明涉及微机电系统技术领域，特别是一种MEMS传感器及其制备方法。
 背景技术
目前MEMS传感器的许多设计，如麦克风、压力传感器和惯性传感器，都使用单个设备层和一个或多个牺牲层，释放牺牲层后将允许设备层的移动，在不增加模具尺寸的情况下，单件设备层的设计在性能、鲁棒性和感性方面接近限制，因此，对双层或多层设备结构的需求不断增加。
现有技术中，一个可能的工艺包括设备层的多外延生长，而化学气相沉积（CVD）和二氧化硅蚀刻等其他过程则用于实现双设备层，但设备层的多外延生长需要非常高的预算，并可能导致意想不到的影响，如翘曲等。
 技术问题
本发明的目的是提供一种MEMS传感器及其制备方法，以解决现有技术中的技术问题，它能够允许设计多层设备，进一步提高性能、可靠性、复杂性和模具尺寸。
 技术解决方案
本发明提供了一种MEMS传感器，包括：
间隔设置的底电极层以及顶电极层，所述底电极层与所述顶电极层之间形成腔体；
设备层，收容于所述腔体内，所述设备层包括若干间隔设置的可动质量块，所述可动质量块通过锚点支撑于所述底电极层上，所述可动质量块与所述顶电极层之间形成预设间隙，不同所述可动质量块所形成的所述预设间隙存在差异。
如上所述的一种MEMS传感器，其中，优选的是，若干所述可动质量块包括第一可动质量块、第二可动质量块以及第三可动质量块，所述第二可动质量块位于所述第一可动质量块以及第三可动质量块之间，所述第一可动质量块与所述顶电极层之间形成第一预设间隙，所述第二可动质量块与所述顶电极层之间形成第二预设间隙，所述第三可动质量块与所述顶电极层之间形成第三预设间隙，所述第一预设间隙、所述第二预设间隙以及所述第三预设间隙的高度值存在差异。 
如上所述的一种MEMS传感器，其中，优选的是，所述第一预设间隙的高度值、所述第三预设间隙的高度值以及所述第二预设间隙的高度值依次增加。
如上所述的一种MEMS传感器，其中，优选的是，所述第一预设间隙的高度值与所述第三预设间隙的高度值相同，所述第二预设间隙的高度值大于所述第一预设间隙以及所述第三预设间隙的高度值。
如上所述的一种MEMS传感器，其中，优选的是，所述第一可动质量块以及所述第三可动质量块的底部连接有一个锚点，所述第二可动质量块的底部连接有两个锚点。
如上所述的一种MEMS传感器，其中，优选的是，所述顶电极层上形成有若干开口，若干所述开口沿所述顶电极层的径向间隔分布。
第二方面，本发明还提供了一种MEMS传感器的制备方法，用于制备前述的MEMS传感器，包括以下步骤：
步骤S1：自下而上依次形成底电极层、牺牲层、设备层以及顶电极层；
步骤S2：刻蚀所述设备层，以形成若干间隔设置的可动质量块；
步骤S3：释放所述设备层内的牺牲层。
如上所述的一种MEMS传感器的制备方法，其中，优选的是，所述步骤S1中，包括：
步骤101：形成底电极层；
步骤102：于所述底电极层上形成牺牲层，并于所述牺牲层的顶面刻蚀形成阶梯界面以及若干凹槽；
步骤103：于所述牺牲层上形成设备层，所述设备层的可动质量块层叠于所述阶梯界面上，所述设备层的锚点形成于所述凹槽内；
步骤104：形成所述顶电极层，并于所述顶电极层上形成若干开口。 
如上所述的一种MEMS传感器的制备方法，其中，优选的是，所述步骤S2中，通过DRIE工艺刻蚀所述设备层，以形成若干间隔设置的可动质量块。
如上所述的一种MEMS传感器的制备方法，其中，优选的是，所述设备层的材质为钛酸锆铅、氮化铝、钛酸钡或以上材料的混合物。
 有益效果
与现有技术相比，本发明通过将设备层设为若干间隔设置的可动质量块，不同所述可动质量块所形成的所述预设间隙存在差异，从而形成差分输出的电信号，此结构允许更大的设计灵活性，并对传感器提供了更高的灵敏度和更大的驱动力，也可以实现模具尺寸的缩小，同时实现更复杂的设计，具有更高的精度和小型化。
 附图说明
图1是本发明所提供实施例一的MEMS传感器的剖面示意图；
图2a-2c是本发明所提供实施例一的MEMS传感器的制备流程图；
图3是本发明所提供实施例二的MEMS传感器的剖面示意图；
图4a-4c是本发明所提供实施例二的MEMS传感器的制备流程图。
附图标记说明：1-底电极层，2-顶电极层，21-开口，3-腔体，4-设备层，41-可动质量块，411-第一可动质量块，412-第一预设间隙，413-第二可动质量块，414-第二预设间隙，415-第三可动质量块,416-第三预设间隙，42-锚点，5-牺牲层，51-凹槽。
 本发明的最佳实施方式
下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
如图1以及图3所示，本发明的实施例提供了一种MEMS传感器，包括：
间隔设置的底电极层1以及顶电极层2，底电极层1与顶电极层2之间形成腔体3。
设备层4，收容于腔体3内，设备层4的至少一部分是导电的，使得设备层4和与设备层4相对的顶电极层2之间形成电容器，具体地，当MEMS传感器用于麦克风使用时，在麦克风通电工作时，顶电极层2与设备层4会带上极性相反的电荷，从而形成电容，当设备层4在声波的作用下产生振动，顶电极层2与设备层4之间的距离会发生变化，从而导致电容器的电容发生改变，进而将声波信号转化为了电信号，实现麦克风的相应功能。
本申请所提供的实施例中，设备层4包括若干间隔设置的可动质量块41，可动质量块41通过锚点42支撑于底电极层1上，可动质量块41与顶电极层2之间形成预设间隙，不同可动质量块41所形成的预设间隙存在差异，从而形成差分输出的电信号，此结构允许更大的设计灵活性，并对传感器提供了更高的灵敏度和更大的驱动力，也可以实现模具尺寸的缩小，同时实现更复杂的设计，具有更高的精度和小型化。具体地，当MEMS传感器用于麦克风使用时，可以使得电容式麦克风得到更高的信噪比、提高抑制线性失真的能力，同时可以提高麦克风的抗干扰能力, 使信号传输的距离更长，麦克风的音频性能更加优良。
进一步地，若干可动质量块41包括第一可动质量块411、第二可动质量块413以及第三可动质量块415，第二可动质量块413位于第一可动质量块411以及第三可动质量块415之间，第一可动质量块411与顶电极层2之间形成第一预设间隙412，第二可动质量块413与顶电极层2之间形成第二预设间隙414，第三可动质量块415与顶电极层2之间形成第三预设间隙416，第一预设间隙412、第二预设间隙414以及第三预设间隙416的高度值存在差异。
第一可动质量块411与顶电极层2之间形成第一电容器，当第一可动质量块411与顶电极层2之间形成的第一预设间隙412的高度值发生变化时，第一电容器的电容随之改变，第二可动质量块413与顶电极层2之间形成第二电容器，当第二可动质量块413与顶电极层2之间形成的第二预设间隙414的高度值发生变化时，第二电容器的电容随之改变，第三可动质量块415与顶电极层2之间形成第三电容器，当第三可动质量块415与顶电极层2之间形成的第三预设间隙416的高度值发生变化时，第三电容器的电容随之改变，第一电容器、第二电容器和第三电容器输出的电信号形成差分输出，传感器的灵敏度更高。 
以下列举两个实施例对本发明所提供的MEMS传感器用作麦克风时做更具体的说明，本领域的技术人员可以知晓，可以根据此实施例做出变形例，都属于本发明的保护范围。
实施例一
参照图1所示，本实施例中，第一预设间隙412的高度值、第三预设间隙416的高度值以及第二预设间隙414的高度值依次增加，由于电容的值与电容两个板之间的正对面积成正比，与电容两个板之间的距离成反比，即C＝kε0εrS/d，k为常数，ε0为常数，εr为常数。当电容式麦克风制作出来后，ε0εr的值也就固定了，S是电容两个电板之间正对的面积，d为两个电板之间的距离，第一可动质量块411、第二可动质量块413以及第三可动质量块415的表面大致相同的情况下，预设间隙的高度值越大，电容也就越小，本实施例中，第一可动质量块411所形成的第一电容器的初始电容值最大，第三可动质量块415所形成的第三电容器的初始电容值次之，第二可动质量块413所形成的第三电容器的初始电容值最小，第二可动质量块413位于设备层4的中部，是变形最剧烈的部分，由此可以提供更高的灵敏度和更大的驱动力。
本实施例中，参照图1所示，第一可动质量块411以及第三可动质量块415的底部连接有一个锚点42，第二可动质量块413的底部连接有两个锚点42，第一可动质量块411、第二可动质量块413、第三可动质量块415以及锚点42均可以由导电材料构成。
由于第二可动质量块413的底部支撑有两个间隔设置的锚点42，第二可动质量块413的可动部分位于两个锚点42之间，在当设备层4在声波的作用下产生振动时，第二可动质量块413的可动部分形成弯曲变形，从而改变与顶电极层2之间的距离，第二电容器的电容随之改变，第一电容器、第二电容器和第三电容器之间形成差分输出的电信号。
一种可行的实施方式中，在当设备层4在声波的作用下产生振动时，第一可动质量块411以及第三可动质量块415也可以绕着锚点42枢转，使得第一可动质量块411以及第三可动质量块415的一端向上倾斜，而另一端向下倾斜，从而改变与顶电极层2之间的距离，第一电容器和第三电容器的电容随之改变，形成差分输出的电信号。
本实施例中，顶电极层2上形成有若干开口21，若干开口21沿顶电极层2的径向间隔分布，开口21均匀分布，以提供声波通过的通道以及为后续的成型工艺提供结构支持。
参照图2a-2c所示，图2a-2c是本发明所提供实施例的MEMS传感器的制备流程图， MEMS传感器的制备方法包括以下步骤：
步骤S1：参照图2a所示，自下而上依次形成底电极层1、牺牲层5、设备层4以及顶电极层2，一种可行的实施方式中，具体包括以下步骤：
步骤101：底电极层1通过电子束剥离法或磁控溅射法形成在硅材质的衬底上，底电极层1通过底电极引线（未示出）与底电极焊盘（未示出）连接，底电极层1材料可以为Al、Mo、W、Pt、Cu、Ag、Au、ZrN中的一种或几种，也可以是其他导电性能良好的材料；
步骤102：于底电极层1上形成牺牲层5，并于牺牲层5的顶面刻蚀形成阶梯界面以及若干凹槽51，牺牲层5的材料可以为PSG，在牺牲层5上制作图形化的硬质掩膜，通过干法刻蚀或湿法刻蚀的方式在牺牲层5上刻蚀形成凹槽51；
步骤103：于牺牲层5上形成设备层4，设备层4的材质为钛酸锆铅、氮化铝、钛酸钡或以上材料的混合物，设备层4的可动质量块41层叠于阶梯界面上，从而形成具有高度差的设备层4，设备层4的锚点42形成于凹槽51内，填充于凹槽51内直至与底电极层1之间形成电耦合；
步骤104：形成顶电极层2，顶电极层2通过底电极引线（未示出）与顶电极焊盘（未示出）连接，顶电极层2材料可以为Al、Mo、W、Pt、Cu、Ag、Au、ZrN中的一种或几种，也可以是其他导电性能良好的材料，在顶电极层2上制作图形化的硬质掩膜，通过干法刻蚀或湿法刻蚀的方式在顶电极层2上刻蚀形成开口21。 
步骤S2：参照图2b所示，刻蚀设备层4，以形成若干间隔设置的可动质量块41，优选的是，通过DRIE（深反应离子刻蚀）工艺刻蚀设备层4，通过使用DRIE的这一创新来隔离和创建不同高度上的可动质量块，能够实现多层高度结构的设备层，允许更大的设计灵活性，并对传感器提供了更高的灵敏度和更大的驱动力，也可以实现模具尺寸的缩小，同时实现更复杂的设计，具有更高的精度和小型化，相同的DRIE流程步骤也可以用于为设备层进行模式化，同时避免热循环数量的增加，由于DRIE创造了设备步进高度，电极之间的间隙也可以改变，这对采用平行板电极结构的传感器特别有用，牺牲层5可以作为硬质掩膜，避免DRIE工艺刻蚀底电极层1。
具体地，若干可动质量块41包括第一可动质量块411、第二可动质量块413以及第三可动质量块415，第一可动质量块411与顶电极层2之间形成第一预设间隙412，第二可动质量块413与顶电极层2之间形成第二预设间隙414，第三可动质量块415与顶电极层2之间形成第三预设间隙416，第一预设间隙412的高度值、第三预设间隙416的高度值以及第二预设间隙414的高度值依次增加。
步骤S3：参照图2c所示，释放设备层4内的牺牲层5，以允许设备层4移动。
实施例二
参照图3所示，本实施例与实施例一的差别在于第一预设间隙412的高度值与第三预设间隙416的高度值相同，第二预设间隙414的高度值大于第一预设间隙412以及第三预设间隙416的高度值，本实施例中，第一可动质量块411所形成的第一电容器的初始电容值相同，第二可动质量块413所形成的第三电容器的初始电容值相对较小，第二可动质量块413位于设备层4的中部，是变形最剧烈的部分，由此可以提供更高的灵敏度和更大的驱动力。
参照图4a-4c所示，图4a-4c是本发明所提供实施例的MEMS传感器的制备流程图， MEMS传感器的制备方法包括以下步骤：
步骤S1：参照图4a所示，自下而上依次形成底电极层1、牺牲层5、设备层4以及顶电极层2，一种可行的实施方式中，具体包括以下步骤：
步骤101：底电极层1通过电子束剥离法或磁控溅射法形成在硅材质的衬底上，底电极层1通过底电极引线（未示出）与底电极焊盘（未示出）连接，底电极层1材料可以为Al、Mo、W、Pt、Cu、Ag、Au、ZrN中的一种或几种，也可以是其他导电性能良好的材料；
步骤102：于底电极层1上形成牺牲层5，并于牺牲层5的顶面刻蚀形成阶梯界面以及若干凹槽51，牺牲层5的材料可以为PSG，在牺牲层5上制作图形化的硬质掩膜，通过干法刻蚀或湿法刻蚀的方式在牺牲层5上刻蚀形成凹槽51；
步骤103：于牺牲层5上形成设备层4，设备层4的材质为钛酸锆铅、氮化铝、钛酸钡或以上材料的混合物，设备层4的可动质量块41层叠于阶梯界面上，从而形成具有高度差的设备层4，设备层4的锚点42形成于凹槽51内，填充于凹槽51内直至与底电极层1之间形成电耦合；
步骤104：形成顶电极层2，顶电极层2通过底电极引线（未示出）与顶电极焊盘（未示出）连接，顶电极层2材料可以为Al、Mo、W、Pt、Cu、Ag、Au、ZrN中的一种或几种，也可以是其他导电性能良好的材料，在顶电极层2上制作图形化的硬质掩膜，通过干法刻蚀或湿法刻蚀的方式在顶电极层2上刻蚀形成开口21。 
步骤S2：参照图4b所示，刻蚀设备层4，以形成若干间隔设置的可动质量块41，优选的是，通过DRIE（深反应离子刻蚀）工艺刻蚀设备层4，通过使用DRIE的这一创新来隔离和创建不同高度上的可动质量块，能够实现多层高度结构的设备层，允许更大的设计灵活性，并对传感器提供了更高的灵敏度和更大的驱动力，也可以实现模具尺寸的缩小，同时实现更复杂的设计，具有更高的精度和小型化，相同的DRIE流程步骤也可以用于为设备层进行模式化，同时避免热循环数量的增加，由于DRIE创造了设备步进高度，电极之间的间隙也可以改变，这对采用平行板电极结构的传感器特别有用，牺牲层5可以作为硬质掩膜，避免DRIE工艺刻蚀底电极层1。
具体地，若干可动质量块41包括第一可动质量块411、第二可动质量块413以及第三可动质量块415，第一可动质量块411与顶电极层2之间形成第一预设间隙412，第二可动质量块413与顶电极层2之间形成第二预设间隙414，第三可动质量块415与顶电极层2之间形成第三预设间隙416，第一预设间隙412的高度值与第三预设间隙416的高度值相同，第二预设间隙414的高度值大于第一预设间隙412以及第三预设间隙416的高度值。
步骤S3：参照图4c所示，释放设备层4内的牺牲层5，以允许设备层4移动。
以上依据图式所示的实施例详细说明了本发明的构造、特征及作用效果，以上所述仅为本发明的较佳实施例，但本发明不以图面所示限定实施范围，凡是依照本发明的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本发明的保护范围内。

Claims (10)

  1. 一种MEMS传感器，其特征在于，包括：
    间隔设置的底电极层以及顶电极层，所述底电极层与所述顶电极层之间形成腔体；
    设备层，收容于所述腔体内，所述设备层包括若干间隔设置的可动质量块，所述可动质量块通过锚点支撑于所述底电极层上，所述可动质量块与所述顶电极层之间形成预设间隙，不同所述可动质量块所形成的所述预设间隙存在差异。
  2. 根据权利要求1所述的MEMS传感器，其特征在于：若干所述可动质量块包括第一可动质量块、第二可动质量块以及第三可动质量块，所述第二可动质量块位于所述第一可动质量块以及第三可动质量块之间，所述第一可动质量块与所述顶电极层之间形成第一预设间隙，所述第二可动质量块与所述顶电极层之间形成第二预设间隙，所述第三可动质量块与所述顶电极层之间形成第三预设间隙，所述第一预设间隙、所述第二预设间隙以及所述第三预设间隙的高度值存在差异。 
  3. 根据权利要求2所述的MEMS传感器，其特征在于：所述第一预设间隙的高度值、所述第三预设间隙的高度值以及所述第二预设间隙的高度值依次增加。
  4. 根据权利要求2所述的MEMS传感器，其特征在于：所述第一预设间隙的高度值与所述第三预设间隙的高度值相同，所述第二预设间隙的高度值大于所述第一预设间隙以及所述第三预设间隙的高度值。
  5. 根据权利要求2所述的MEMS传感器，其特征在于：所述第一可动质量块以及所述第三可动质量块的底部连接有一个锚点，所述第二可动质量块的底部连接有两个锚点。
  6. 根据权利要求1所述的MEMS传感器，其特征在于：所述顶电极层上形成有若干开口，若干所述开口沿所述顶电极层的径向间隔分布。
  7. 一种MEMS传感器的制备方法，用于制备权利要求1-6任一项所述的MEMS传感器，其特征在于，包括以下步骤：
    步骤S1：自下而上依次形成底电极层、牺牲层、设备层以及顶电极层；
    步骤S2：刻蚀所述设备层，以形成若干间隔设置的可动质量块；
    步骤S3：释放所述设备层内的牺牲层。
  8. 根据权利要求7所述的MEMS传感器的制备方法，其特征在于：
    所述步骤S1中，包括：
    步骤101：形成底电极层；
    步骤102：于所述底电极层上形成牺牲层，并于所述牺牲层的顶面刻蚀形成阶梯界面以及若干凹槽；
    步骤103：于所述牺牲层上形成设备层，所述设备层的可动质量块层叠于所述阶梯界面上，所述设备层的锚点形成于所述凹槽内；
    步骤104：形成所述顶电极层，并于所述顶电极层上形成若干开口。 
  9. 根据权利要求7所述的MEMS传感器的制备方法，其特征在于：所述步骤S2中，通过DRIE工艺刻蚀所述设备层，以形成若干间隔设置的可动质量块。
  10.  根据权利要求7所述的MEMS传感器的制备方法，其特征在于：所述设备层的材质为钛酸锆铅、氮化铝、钛酸钡或以上材料的混合物。
PCT/CN2023/098007 2023-05-24 2023-06-02 一种mems传感器及其制备方法 Ceased WO2024239374A1 (zh)

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