WO2024234155A1 - 晶圆切割装置及晶圆切割方法 - Google Patents

晶圆切割装置及晶圆切割方法 Download PDF

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Publication number
WO2024234155A1
WO2024234155A1 PCT/CN2023/093949 CN2023093949W WO2024234155A1 WO 2024234155 A1 WO2024234155 A1 WO 2024234155A1 CN 2023093949 W CN2023093949 W CN 2023093949W WO 2024234155 A1 WO2024234155 A1 WO 2024234155A1
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WO
WIPO (PCT)
Prior art keywords
cutting
wafer
cut
focusing mirror
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/093949
Other languages
English (en)
French (fr)
Inventor
谢炜
莫平
刘磊
吕忠
夏志良
霍宗亮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangtze Memory Technologies Co Ltd
Original Assignee
Yangtze Memory Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangtze Memory Technologies Co Ltd filed Critical Yangtze Memory Technologies Co Ltd
Priority to CN202380009194.9A priority Critical patent/CN119325639A/zh
Priority to PCT/CN2023/093949 priority patent/WO2024234155A1/zh
Priority to US18/514,705 priority patent/US20240375212A1/en
Publication of WO2024234155A1 publication Critical patent/WO2024234155A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0643—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Definitions

  • the present disclosure relates to, but is not limited to, a wafer cutting device and a wafer cutting method.
  • wafer cutting is also accompanied by many challenges.
  • a wafer cutting device comprising: a carrier, a first cutting sub-device, and a second cutting sub-device; wherein:
  • the carrying platform is used to carry the wafer to be cut
  • the first cutting sub-device is used to cut the wafer to be cut from a first side
  • the second cutting sub-device is used to cut the wafer to be cut from the second side; the first side and the second side are two opposite sides of the supporting platform along a first direction, and the first direction is the thickness direction of the supporting platform.
  • the first cutting sub-device and the second cutting sub-device are both used for laser cutting.
  • the first cutting sub-device includes a first focusing mirror, and the first focusing mirror is located on the first side;
  • the second cutting sub-device includes a second focusing mirror, and the second focusing mirror is located on the second side; when the wafer to be cut is cut, the first focusing mirror and the wafer to be cut are cut.
  • the second focusing mirror is aligned along the first direction.
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, and the first focusing mirror and the second focusing mirror are aligned along the first direction.
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable.
  • the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror and the second focusing mirror are aligned along the first direction.
  • the first cutting sub-device further includes a first laser, and the first laser is used to provide a first laser to the first focusing mirror;
  • the second cutting sub-device further includes a second laser, and the second laser is used to provide a second laser to the second focusing mirror.
  • the first cutting sub-device and the second cutting sub-device both further include a first laser; the first laser is used to provide a first laser to the first focusing mirror, and is used to provide a second laser to the second focusing mirror.
  • the first laser is located on the first side, and the second laser is located on the second side; the first laser is aligned with the first focusing mirror along the first direction, and the second laser is aligned with the second focusing mirror along the first direction.
  • the first laser and the second laser are both located on the first side, or the first laser and the second laser are both located on the second side;
  • the first cutting sub-device further comprises at least one first reflecting mirror; the first reflecting mirror is used to introduce the first laser generated by the first laser into the first focusing mirror;
  • the second cutting sub-device further includes at least one second reflecting mirror; the second reflecting mirror is used to guide the second laser generated by the second laser into the second focusing mirror.
  • the support platform is provided with an opening.
  • the opening exposes the cutting path of the wafer to be cut.
  • the position of the carrier in the wafer cutting device is movable, and when the wafer to be cut is cut, the wafer to be cut is cut at different positions by moving the carrier.
  • a wafer cutting method comprising:
  • the wafer to be cut is cut from the first side using a first cutting sub-device, and the wafer to be cut is cut from the second side using a second cutting sub-device; the first side and the second side are two opposite sides of the support platform along a first direction, and the first direction is the thickness direction of the support platform.
  • the first cutting sub-device and the second cutting sub-device are both used for laser cutting.
  • the first cutting sub-device includes a first focusing mirror, and the first focusing mirror is located on the first side;
  • the second cutting sub-device includes a second focusing mirror, and the second focusing mirror is located on the second side;
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first focusing mirror and the second focusing mirror are aligned along the first direction.
  • aligning the first focusing mirror and the second focusing mirror along the first direction includes:
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, the first focusing mirror and the second focusing mirror are aligned along the first direction, and the positions of the first focusing mirror and the second focusing mirror are not adjusted when the wafer to be cut is cut.
  • the first focusing mirror and the second focusing mirror are arranged along the first Direction alignment, including:
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable.
  • the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror is aligned with the second focusing mirror along the first direction.
  • the first cutting sub-device further includes a first laser
  • the second cutting sub-device further includes a second laser
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first laser is used to provide the first focusing mirror with the first laser, so as to cut the wafer to be cut from the first side; and the second laser is used to provide the second focusing mirror with the second laser, so as to cut the wafer to be cut from the second side.
  • the first cutting sub-device and the second cutting sub-device both further include a first laser
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first laser is used to provide the first focusing mirror with a first laser, so as to cut the wafer to be cut from a first side; and the first laser is used to provide the second focusing mirror with a second laser, so as to cut the wafer to be cut from a second side.
  • the position of the carrier in the wafer cutting device is movable
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the carrier table is moved to cut different positions of the wafer to be cut.
  • FIG1 is a structural schematic diagram 1 of a wafer cutting device according to an embodiment of the present disclosure
  • FIG2 is a schematic structural diagram of a wafer to be cut according to an embodiment of the present disclosure
  • FIG3 is a second structural schematic diagram of a wafer cutting device according to an embodiment of the present disclosure.
  • FIG4 is a third structural schematic diagram of a wafer cutting device according to an embodiment of the present disclosure.
  • FIG5 is a fourth structural schematic diagram of a wafer cutting device according to an embodiment of the present disclosure.
  • FIG6 is a fifth structural diagram of a wafer cutting device according to an embodiment of the present disclosure.
  • FIG7 is a sixth structural diagram of a wafer cutting device according to an embodiment of the present disclosure.
  • FIG8 is a schematic diagram of a top view of a supporting platform according to an embodiment of the present disclosure.
  • FIG9 is a second schematic diagram of a top view of the supporting platform according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of an implementation flow of a wafer cutting method according to an embodiment of the present disclosure.
  • first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. And when the second element, component, region, layer, or part is discussed, it does not indicate that the present disclosure necessarily has a first element, component, region, layer, or part.
  • Three-dimensional memory devices are an emerging type of flash memory developed by the industry. Three-dimensional memory devices solve the limitations of two-dimensional or planar flash memory by vertically stacking multiple layers of data storage units. Three-dimensional memory devices have excellent precision, support higher storage capacity in a smaller space, low cost and low power consumption, and can fully meet many needs.
  • wafer dicing is an extremely critical process.
  • the Stealth Dicing Before Grinding (SDBG) process is usually used.
  • SDBG Stealth Dicing Before Grinding
  • the wafer is first split in the direction of the cutting path through stealth dicing, and then back-grinding is performed to remove the mechanical damage caused by the stealth dicing process while obtaining a chip of a predetermined thickness.
  • the front and back sides of the wafer to be cut are cut using a laser cutting process respectively.
  • the wafer cutting device can only be used to cut the front side of the wafer to be cut first, and then the wafer to be cut is turned over, so as to cut the back side of the wafer to be cut. This will result in low cutting efficiency and difficulty in aligning the front and back cutting positions.
  • an embodiment of the present disclosure provides a wafer cutting device, as shown in FIG1 , the wafer cutting device includes:
  • the carrier 101 is used to carry the wafer 102 to be cut;
  • the first cutting sub-device 111 is used to cut the wafer 102 to be cut from a first side;
  • the second cutting sub-device 112 is used to cut the wafer 102 to be cut from the second side; the first side and the second side are two opposite sides of the carrier 101 along a first direction, and the first direction is the thickness direction of the carrier 101.
  • the first direction is the vertical direction as shown in Figure 1
  • the first side is a side of the upper part of the support platform 101 shown in Figure 1
  • the second side is a side of the lower part of the support platform 101 described in Figure 1, but the first side and the second side are not limited thereto.
  • the wafer 102 to be cut may be, for example, a wafer that has completed the processing of the wafer stage (for example, the stage of forming the device structure and the interconnection structure of the device structure).
  • the wafer 102 to be cut may include a semiconductor substrate and a chip arranged in an array on the semiconductor substrate.
  • the chip may include a device structure and an interconnection structure of the device structure.
  • the device structure may include at least one of an active device and a passive device.
  • the active device may, for example, include a MOS device, a memory device or other semiconductor device, wherein the memory device may, for example, include a non-volatile memory or a random access memory, etc.
  • the non-volatile memory may, for example, include a floating gate field effect transistor of at least one of a three-dimensional NAND memory and a three-dimensional NOR memory, or a dynamic random access memory, a ferroelectric memory, a phase change memory, etc.
  • the passive device may, for example, include a resistor, a capacitor or an inductor, etc.
  • the device structure may be a planar device or a three-dimensional device, wherein the three-dimensional device may, for example, be a FIN-FET (fin field effect transistor) and a three-dimensional memory, etc.
  • the wafer 102 to be cut includes a semiconductor substrate 114 and a plurality of chips 107 on the semiconductor substrate 114.
  • the plurality of chips 107 are separated from each other by cutting lanes 108.
  • the cutting lanes 108 may be arranged vertically or horizontally, for example. In other words, cutting lanes 108 are provided between rows and columns of the chip array.
  • the cutting lanes 108 are not used to form actual devices, but are mainly used to cut chips.
  • the semiconductor substrate 114 may include silicon (eg, single crystal silicon, c-Si), silicon germanium (SiGe), gallium arsenide (GaAs), germanium (Ge), silicon on insulator (SOI), or any other suitable material.
  • silicon eg, single crystal silicon, c-Si
  • SiGe silicon germanium
  • GaAs gallium arsenide
  • Ge germanium
  • SOI silicon on insulator
  • the diameter of the wafer 102 to be cut may include 150 mm, 200 mm, 300 mm, 450 mm, etc., but is not limited thereto.
  • the types of cutting used by the first cutting sub-device and the second cutting sub-device include laser cutting, blade cutting, and plasma cutting, but are not limited thereto.
  • the types of cutting used by the first cutting sub-device and the second cutting sub-device may be the same or different.
  • the first cutting sub-device and the second cutting sub-device may both be used for laser cutting, or both for blade cutting; or one of the first cutting sub-device and the second cutting sub-device may be used for laser cutting, and the other may be used for blade cutting.
  • the first cutting sub-device and the second cutting sub-device are both used for laser cutting.
  • the first cutting sub-device includes a first focusing mirror 103, and the first focusing mirror 103 is located on the first side;
  • the second cutting sub-device includes a second focusing mirror 104, and the second focusing mirror 104 is located on the second side; when cutting the wafer 102 to be cut, the first focusing mirror 103 is aligned with the second focusing mirror 104 along the first direction.
  • first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction, which can be understood as the connection line between the first focusing mirror 103 and the second focusing mirror 104 and the support platform 101. Parallel to the thickness direction.
  • first focusing mirror 103 and the second focusing mirror 104 of the wafer cutting device are respectively located on both sides of the carrier 101, and when cutting, the first focusing mirror 103 and the second focusing mirror 104 are aligned along the thickness direction of the carrier 101, so that when the front and back sides of the wafer are cut at the same time, the front cutting position and the back cutting position can be better aligned.
  • the front and back sides of the wafer 102 to be cut refer to two opposite sides of the wafer 102 to be cut in terms of thickness.
  • the front side of the wafer 102 to be cut refers to a side on which components, stacks, connecting lines, and pads are formed on a semiconductor substrate.
  • the following will specifically introduce how to align the first focusing mirror 103 and the second focusing mirror 104 along the first direction.
  • the present disclosure mainly provides two solutions.
  • the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are immovable, and the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction.
  • the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are fixed, and the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction, so that when the front and back sides of the wafer are cut simultaneously, the positions of the front cutting and the back cutting are aligned.
  • Alignment is achieved by fixing the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device, so that the error caused by frequently adjusting the relative positions of the first focusing mirror 103 and the second focusing mirror 104 can be reduced, and the extra workload caused by frequently adjusting the first focusing mirror 103 and the second focusing mirror 104 can be eliminated.
  • the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are movable, and when the wafer 102 to be cut is cut, By adjusting the positions of the first focusing mirror 103 and the second focusing mirror 104, the first focusing mirror 103 and the second focusing mirror 104 are aligned along the first direction.
  • the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device may also be unfixed, and the alignment of the first focusing mirror 103 and the second focusing mirror 104 may be controlled by a computer during the cutting process.
  • the positions of the first focusing mirror 103 and the second focusing mirror 104 in the wafer cutting device are movable, so that the positions of the first focusing mirror 103 and the second focusing mirror 104 are not limited, and the relative positions of the first focusing mirror 103 and the second focusing mirror 104 can be adjusted according to actual needs, which makes it more flexible and can meet more cutting needs.
  • the first focusing mirror 103 cuts the wafer 102 to be cut by the first laser
  • the second focusing mirror 104 cuts the wafer 102 to be cut by the second laser.
  • the embodiments of the present disclosure provide multiple solutions.
  • the first laser light and the second laser light may be provided by two lasers respectively, or the first laser light and the second laser light may be provided by the same laser together.
  • the first cutting sub-device further includes a first laser 105, and the first laser 105 is used to provide a first laser to the first focusing mirror 103;
  • the second cutting sub-device further includes a second laser 106 , and the second laser 106 is used to provide a second laser to the second focusing mirror 104 .
  • the first cutting sub-device and the second cutting sub-device both further include a first laser 105 ; the first laser 105 is used to provide a first laser to the first focusing mirror 103 , and to provide a second laser to the second focusing mirror 104 .
  • the light emitted by the first laser 105 may be divided into two laser beams, which are then provided to the first focusing mirror 103 and the second focusing mirror 104 respectively.
  • the positions of the first laser 105 and the second laser 106 may include various situations.
  • the positions of the first laser 105 and the second laser 106 will be described in detail below.
  • the first laser 105 and the second laser 106 may be located at the first side and the second side, respectively.
  • the first laser 105 is located at the first side, and the second laser 106 is located at the second side; the first laser 105 is aligned with the first focusing mirror 103 along the first direction, and the second laser 106 is aligned with the second focusing mirror 104 along the first direction.
  • the first laser 105 is aligned with the first focusing lens 103 along the first direction
  • the second laser 106 is aligned with the second focusing lens 104 along the first direction. It can be understood that: the line connecting the light outlet of the first laser 105 and the light entrance of the first focusing lens 103 is parallel to the thickness direction of the support platform 101; the line connecting the light outlet of the second laser 106 and the light entrance of the second focusing lens 104 is parallel to the thickness direction of the support platform 101.
  • the first laser 105 is aligned with the first focusing mirror 103 along the first direction
  • the second laser 106 is aligned with the second focusing mirror 104 along the first direction, so that the laser generated by the first focusing mirror 103 can be directly irradiated into the first focusing mirror 103, and the laser generated by the second focusing mirror 104 can be directly irradiated into the second focusing mirror 104.
  • the path of the generated laser to reach the focusing mirror is shorter, which can reduce the energy loss of the laser during propagation along a long path; on the second hand, the wafer cutting device has fewer structural components.
  • the first laser 105 and the first focusing mirror 103 may not be aligned along the first direction, and/or the second laser 106 and the second focusing mirror 104 may not be aligned along the first direction.
  • the first laser 105 may be aligned along the first direction by setting an optical path conversion structure. The first laser is introduced into the first focusing mirror, and the second laser is introduced into the second focusing mirror.
  • the optical path conversion structure includes a reflector, specifically a first reflector 109 and a second reflector 113 .
  • a reflector specifically a first reflector 109 and a second reflector 113 .
  • the first laser 105 and the second laser 106 are both located at the first side, or, as shown in FIG6 , the first laser 105 and the second laser 106 are both located at the second side;
  • the first cutting sub-device further includes at least one first reflector 109; the first reflector 109 is used to introduce the first laser generated by the first laser 105 into the first focusing mirror 103;
  • the second cutting sub-device further includes at least one second reflecting mirror 113 ; the second reflecting mirror 113 is used to guide the second laser generated by the second laser 106 into the second focusing mirror 104 .
  • the directions of the lasers emitted by the first laser 105 and the second laser 106 are opposite, and the directions of the lasers emitted by the first laser 105 and the second laser 106 are both perpendicular to the first direction.
  • the first cutting sub-device includes three first reflectors 109, and the second cutting sub-device includes three second reflectors 113.
  • the relative positions of the first laser 105 and the second laser 106 and the numbers of the first reflectors 109 and the second reflectors 113 are not limited to this.
  • the number and positions of the first reflectors and the second reflectors can be specifically set according to the optical path directions of the first laser emitted from the first laser and the second laser emitted from the second laser. As long as the first laser can enter the first focusing mirror 103 and the second laser can enter the second focusing mirror 104, the cutting of the wafer to be cut can be achieved.
  • FIG6 The following is a detailed description of the arrangement of the first reflector and the second reflector by taking FIG6 as an example.
  • three first reflectors 109 are arranged.
  • the direction of the first laser light emitted from the first laser 105 is horizontally to the right.
  • the optical path direction of the first laser light is first changed to vertically upward by the first first reflector.
  • the angle a1 between the first reflector and the horizontal direction can be set to 45°; the optical path direction of the first laser is changed from the vertical upward direction to the horizontal left direction through the second first reflector, and the angle a2 between the second first reflector and the horizontal direction can be set to 135°; the optical path direction of the first laser is changed to the vertical downward direction through the third first reflector, so as to be introduced into the first focusing mirror, and the angle a3 between the third first focusing mirror and the horizontal direction can be set to 45°.
  • the setting of the second reflector is similar to that of the first reflector, and the angle a4 between the first second reflector and the horizontal direction is 135°, the angle a5 between the second second reflector and the horizontal direction is 45°, and the angle a6 between the third second reflector and the horizontal direction is 45°, so that the second laser is introduced into the second focusing mirror.
  • first laser 105 and the second laser 106 are located on the same side so as to reduce the height of the wafer cutting device and prevent the wafer cutting device from being too high to be inconvenient for installation or use.
  • the height of the wafer cutting device and the simplicity of the structural components can also be comprehensively considered so that the first laser 105 and the second laser 106 are located on the same side, and the lasers from the first laser 105 and the second laser 106 are both directed vertically downward.
  • the first laser generated by the first laser 105 directly enters the first focusing mirror 103, and the second laser generated by the second laser 106 is introduced into the second focusing mirror 104 through the second reflecting mirror 113.
  • Figures 1 and 3 to 7 are only examples and are not used to limit the first cutting sub-device and the second cutting sub-device in the embodiment of the present disclosure.
  • the first cutting sub-device and the second cutting sub-device in Figures 1 and 3 to 7 can also be combined with each other without conflict.
  • the wavelength of the first laser and the wavelength of the second laser can be the same or different.
  • a laser with a shorter wavelength can be selected to cut the front side of the wafer, and a laser with a longer wavelength can be selected to cut the back side of the wafer.
  • the selection can be made based on the materials of the front and back sides of the wafer to be cut.
  • FIG8 and FIG9 are schematic diagrams of a top-view structure of a carrier platform 101 shown in an embodiment of the present disclosure. It should be noted that in order to more clearly show the relationship between the carrier platform 101 and the wafer 102 to be cut, FIG9 shows a perspective view, and the actual carrier platform 101 is located under the wafer 102 to be cut.
  • the carrier 101 is provided with an opening 110 .
  • the opening 110 exposes the cutting path 108 of the wafer to be cut.
  • the carrier 101 is provided with an opening 110 , and the opening 110 exposes the cutting path 108 of the wafer to be cut, so that the front side of the wafer to be cut can be cut without affecting the cutting of the back side of the wafer to be cut.
  • the position of the carrier 101 in the wafer cutting device is movable, and when the wafer 102 to be cut is cut, the wafer 102 to be cut is cut at different positions by moving the carrier 101 .
  • the wafer cutting device in the embodiment of the present disclosure can meet a wider range of cutting requirements because it can cut both the front and back sides of the wafer 102 to be cut at the same time. For example, it can meet the cutting requirements when the number of stacked layers of chips is getting higher and higher.
  • the embodiment of the present disclosure provides a wafer cutting device, comprising: a carrier 101, a first cutting sub-device, and a second cutting sub-device; wherein the carrier 101 is used to carry a wafer 102 to be cut; the first cutting sub-device is used to cut the wafer 102 to be cut from a first side; the second cutting sub-device is used to cut the wafer 102 to be cut from a second side; the first side and the second side are two opposite sides of the carrier 101 along a first direction, and the first direction is the thickness direction of the carrier 101.
  • the wafer cutting device comprises a first cutting sub-device and a second cutting sub-device, and they are respectively used to cut the wafer 102 to be cut from two sides in the thickness direction of the carrier 101.
  • the wafer cutting device of the embodiment of the present disclosure The cutting device can cut both the front and back sides of the wafer 102 to be cut at the same time, which can improve the cutting efficiency; on the other hand, since the front and back sides of the wafer 102 to be cut can be cut at the same time, the components of the first cutting sub-device and the second cutting sub-device can be set accordingly to improve the problem of difficulty in aligning the cutting positions of the front and back sides during the process of separately cutting the front and back sides of the wafer 102 to be cut, thereby effectively improving the yield of the chips after cutting.
  • the embodiment of the present disclosure further provides a wafer cutting method, as shown in FIG10 , the method includes:
  • Step S1001 placing a wafer to be cut on a carrier
  • Step S1002 Use a first cutting sub-device to cut the wafer to be cut from a first side, and use a second cutting sub-device to cut the wafer to be cut from a second side; the first side and the second side are two opposite sides of the support platform along a first direction, and the first direction is the thickness direction of the support platform.
  • the first cutting sub-device and the second cutting sub-device can be used to cut the front and back sides of the wafer to be cut at the same time, thereby effectively improving the cutting efficiency.
  • the front and back sides can be cut at the same position of the wafer to be cut, thereby effectively improving the position alignment problem when cutting the front and back sides.
  • the first cutting sub-device and the second cutting sub-device are both used for laser cutting.
  • the first cutting sub-device includes a first focusing mirror, and the first focusing mirror is located on the first side;
  • the second cutting sub-device includes a second focusing mirror, and the second focusing mirror is located on the second side;
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first focusing mirror and the second focusing mirror are aligned along the first direction.
  • the embodiment of the present disclosure provides two solutions for how to align the first focusing mirror and the second focusing mirror along the first direction.
  • aligning the first focusing mirror and the second focusing mirror along the first direction includes:
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are immovable, the first focusing mirror and the second focusing mirror are aligned along the first direction, and the positions of the first focusing mirror and the second focusing mirror are not adjusted when the wafer to be cut is cut.
  • aligning the first focusing mirror and the second focusing mirror along the first direction includes:
  • the positions of the first focusing mirror and the second focusing mirror in the wafer cutting device are movable.
  • the positions of the first focusing mirror and the second focusing mirror are adjusted so that the first focusing mirror is aligned with the second focusing mirror along the first direction.
  • the first cutting sub-device further comprises a first laser
  • the second cutting sub-device further comprises a second laser
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first laser is used to provide the first focusing mirror with the first laser, so as to cut the wafer to be cut from the first side; and the second laser is used to provide the second focusing mirror with the second laser, so as to cut the wafer to be cut from the second side.
  • the first cutting sub-device and the second cutting sub-device both further include a first laser
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the first laser is used to provide the first focusing mirror with a first laser, so as to cut the wafer to be cut from a first side; and the first laser is used to provide the second focusing mirror with a second laser, so as to cut the wafer to be cut from a second side.
  • the position of the carrier in the wafer cutting device is movable
  • the method of cutting the wafer to be cut from a first side by using a first cutting sub-device, and cutting the wafer to be cut from a second side by using a second cutting sub-device comprises:
  • the carrier table is moved to cut different positions of the wafer to be cut.

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Abstract

本公开实施例提供一种晶圆切割装置及晶圆切割方法，所述晶圆切割装置包括：承载台、第一切割子装置、第二切割子装置；其中，所述承载台，用于承载待切割晶圆；所述第一切割子装置，用于从第一侧对所述待切割晶圆进行切割；所述第二切割子装置，用于从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。

Description

晶圆切割装置及晶圆切割方法 技术领域
本公开涉及但不限于一种晶圆切割装置及晶圆切割方法。
背景技术
在半导体的制造过程中，首先通过半导体工艺在晶圆上形成多个芯片，然后通过切割工艺将晶圆切割成一个个分离的芯片，再对这些芯片进行封装，最终得到可以使用的半导体器件。
随着对半导体器件集成度要求的越来越高，晶圆的切割也伴随着诸多挑战。
发明内容
根据本公开实施例的第一方面，提供了一种晶圆切割装置，包括：承载台、第一切割子装置、第二切割子装置；其中，
所述承载台，用于承载待切割晶圆；
所述第一切割子装置，用于从第一侧对所述待切割晶圆进行切割；
所述第二切割子装置，用于从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。
上述方案中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
上述方案中，所述第一切割子装置包括第一聚焦镜，所述第一聚焦镜位于所述第一侧；所述第二切割子装置包括第二聚焦镜，所述第二聚焦镜位于所述第二侧；在对所述待切割晶圆进行切割时，所述第一聚焦镜与所 述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，通过调整所述第一聚焦镜和所述第二聚焦镜的位置，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述第一切割子装置还包括第一激光器，所述第一激光器用于向所述第一聚焦镜提供第一激光；
所述第二切割子装置还包括第二激光器，所述第二激光器用于向所述第二聚焦镜提供第二激光。
上述方案中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器；所述第一激光器用于向所述第一聚焦镜提供第一激光，并用于向所述第二聚焦镜提供第二激光。
上述方案中，所述第一激光器位于所述第一侧，所述第二激光器位于所述第二侧；所述第一激光器与所述第一聚焦镜沿所述第一方向对齐，所述第二激光器与所述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述第一激光器、所述第二激光器均位于所述第一侧，或，所述第一激光器、所述第二激光器均位于所述第二侧；
所述第一切割子装置还包括至少一个第一反射镜；所述第一反射镜用于将所述第一激光器产生的第一激光引入所述第一聚焦镜中；
所述第二切割子装置还包括至少一个第二反射镜；所述第二反射镜用于将所述第二激光器产生的第二激光引入所述第二聚焦镜中。
上述方案中，所述承载台设置有开口，当所述待切割晶圆置于所述承 载台时，所述开口暴露出所述待切割晶圆的切割道。
上述方案中，所述承载台在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，通过移动所述承载台对所述待切割晶圆的不同位置进行切割。
根据本公开实施例的第二方面，提供了一种晶圆切割方法，包括：
将待切割晶圆置于承载台上；
利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。
上述方案中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
上述方案中，所述第一切割子装置包括第一聚焦镜，所述第一聚焦镜位于所述第一侧；所述第二切割子装置包括第二聚焦镜，所述第二聚焦镜位于所述第二侧；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
在对所述待切割晶圆进行切割时，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，包括：
所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，在对所述待切割晶圆进行切割时，不调整所述第一聚焦镜和所述第二聚焦镜的位置。
上述方案中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一 方向对齐，包括：
所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，调整所述第一聚焦镜和所述第二聚焦镜的位置，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
上述方案中，所述第一切割子装置还包括第一激光器，所述第二切割子装置还包括第二激光器；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第二激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
上述方案中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第一激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
上述方案中，所述承载台在所述晶圆切割装置中的位置可移动；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
在对所述待切割晶圆进行切割时，移动所述承载台，对所述待切割晶圆的不同位置进行切割。
附图说明
图1为本公开一实施例的晶圆切割装置的结构示意图一；
图2为本公开一实施例的待切割晶圆的结构示意图；
图3为本公开一实施例的晶圆切割装置的结构示意图二；
图4为本公开一实施例的晶圆切割装置的结构示意图三；
图5为本公开一实施例的晶圆切割装置的结构示意图四；
图6为本公开一实施例的晶圆切割装置的结构示意图五；
图7为本公开一实施例的晶圆切割装置的结构示意图六；
图8为本公开一实施例的承载台的俯视结构示意图一；
图9为本公开一实施例的承载台的俯视结构示意图二；
图10为本公开一实施例的晶圆切割方法的实现流程示意图。
具体实施方式
下面将参照附图更详细地描述本公开公开的示例性实施方式。虽然附图中显示了本公开的示例性实施方式，然而应当理解，可以以各种形式实现本公开，而不应被这里阐述的具体实施方式所限制。相反，提供这些实施方式是为了能够更透彻地理解本公开，并且能够将本公开公开的范围完整的传达给本领域的技术人员。
在下文的描述中，给出了大量具体的细节以便提供对本公开更为彻底的理解。然而，对于本领域技术人员而言显而易见的是，本公开可以无需一个或多个这些细节而得以实施。在其他的例子中，为了避免与本公开发生混淆，对于本领域公知的一些技术特征未进行描述；即，这里不描述实际实施例的全部特征，不详细描述公知的功能和结构。
在附图中，为了清楚，层、区、元件的尺寸以及其相对尺寸可能被夸大。自始至终相同附图标记表示相同的元件。
应当明白，当元件或层被称为“在……上”、“与……相邻”、“连接到”或“耦合到”其它元件或层时，其可以直接地在其它元件或层上、与之相邻、连接或耦合到其它元件或层，或者可以存在居间的元件或层。相反， 当元件被称为“直接在……上”、“与……直接相邻”、“直接连接到”或“直接耦合到”其它元件或层时，则不存在居间的元件或层。应当明白，尽管可使用术语第一、第二、第三等描述各种元件、部件、区、层和/或部分，这些元件、部件、区、层和/或部分不应当被这些术语限制。这些术语仅仅用来区分一个元件、部件、区、层或部分与另一个元件、部件、区、层或部分。因此，在不脱离本公开教导之下，下面讨论的第一元件、部件、区、层或部分可表示为第二元件、部件、区、层或部分。而当讨论的第二元件、部件、区、层或部分时，并不表明本公开必然存在第一元件、部件、区、层或部分。
空间关系术语例如“在……下”、“在……下面”、“下面的”、“在……之下”、“在……之上”、“上面的”等，在这里可为了方便描述而被使用从而描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白，除了图中所示的取向以外，空间关系术语意图还包括使用和操作中的器件的不同取向。例如，如果附图中的器件翻转，然后，描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或特征“上”。因此，示例性术语“在……下面”和“在……下”可包括上和下两个取向。器件可以另外地取向(旋转90度或其它取向)并且在此使用的空间描述语相应地被解释。
在此使用的术语的目的仅在于描述具体实施例并且不作为本公开的限制。在此使用时，单数形式的“一”、“一个”和“所述/该”也意图包括复数形式，除非上下文清楚指出另外的方式。还应明白术语“组成”和/或“包括”，当在该说明书中使用时，确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
为了能够更加详尽地了解本公开实施例的特点与技术内容，下面结合附图对本公开实施例的实现进行详细阐述，所附附图仅供参考说明之用，并非用来限定本公开实施例。
随着电子行业的高速发展，越来越需要高性能低成本的半导体器件。传统的二维或平面存储器的集成度主要由单位存储单元占据的面积来确定。因此，传统的二维存储器的集成度在很大程度上，受到精细图案形成技术的影响。然而，增加图案精细度需要较为昂贵的工艺设备，这对增加二维存储器的集成度造成了很大的局限性。三维存储器器件是业界所研发的一种新兴的闪存类型，三维存储器器件通过垂直堆叠多层数据存储单元来解决二维或者平面闪存带来的限制。三维存储器器件具备卓越的精度，支持在更小的空间内容纳更高的存储容量，成本低和功耗低，能全面满足众多需求。
在半导体制程中，晶圆切割是个极为关键的工艺环节。为了尽量减少切割中磨划或切割工艺对芯片的机械强度的影响，通常会采用磨削前隐形切割(SDBG，Stealth Dicing Before Grinding)工艺，先通过隐形切割使晶圆按照切割道的方向裂开后，再对其进行背面磨削工艺，以在去除隐形切割工艺带来的机械损伤的同时，得到预定厚度的芯片。
然而，随着对半导体器件集成度要求的越来越高，三维存储器器件中的堆叠层数越来越多，三维存储器的厚度越来越厚，且切割道中设置有越来越复杂的金属层结构，这些金属层结构含有大量的金属材料钨，这样使得利用SDBG工艺无法使得待切割晶圆按照指定方向裂开，造成芯片出现裂片、崩边或破损的现象，从而影响芯片的良率。为解决上述问题，在一些实施例中，会对待切割晶圆正面和背面分别利用激光切割工艺进行切割，但由于现有的晶圆切割装置的限制，只能利用晶圆切割装置先对待切割晶圆正面进行切割，再将待切割晶圆翻片，从而对待切割晶圆背面进行切割， 这样会存在切割效率低的问题以及正反面切割位置的对准难度较大的问题。
基于上述问题中的一个或多个，本公开实施例提供了一种晶圆切割装置，如图1所示，所述晶圆切割装置包括：
承载台101、第一切割子装置111、第二切割子装置112；其中，
所述承载台101，用于承载待切割晶圆102；
所述第一切割子装置111，用于从第一侧对所述待切割晶圆102进行切割；
所述第二切割子装置112，用于从第二侧对所述待切割晶圆102进行切割；所述第一侧以及所述第二侧为所述承载台101沿第一方向相对的两侧，所述第一方向为所述承载台101的厚度方向。
在一些具体示例中，第一方向为如图1中所示的竖直方向，所述第一侧为图1中所示的承载台101的上部的一侧，所述第二侧为图1中所述的承载台101的下部的一侧，但第一侧和第二侧不限于此。
在一些具体示例中，待切割晶圆102可例如为已经完成晶圆阶段(例如，形成器件结构和器件结构的互连结构的阶段)的加工工艺的晶圆。待切割晶圆102可包括半导体基底和半导体基底上阵列排布的芯片。芯片可包括器件结构和器件结构的互连结构。器件结构可包括有源器件和无源器件中的至少一种。有源器件可例如包括MOS器件、存储器件或其他半导体器件，其中存储器件可例如包括非易失性存储器或随机存储器等。非易失性存储器可例如包括三维NAND存储器和三维NOR存储器中的至少一种的浮栅场效应晶体管，或者动态随机存取存储器、铁电存储器、相变存储器等。无源器件可例如包括电阻、电容或电感等，器件结构可以为平面型器件或立体器件，其中立体器件可例如为FIN-FET(鳍式场效应晶体管)和三维存储器等。
在一些具体示例中，如图2所示，待切割晶圆102包括半导体基底114以及半导体基底114上的多个芯片107，多个芯片107彼此之间通过切割道108间隔开，切割道108可例如呈纵、横排布，换言之，在芯片阵列的行之间以及列之间都设置有切割道108。切割道108上并不用于形成实际的器件，切割道108主要用于切割芯片。
在一些具体示例中，半导体基底114可以包括硅(例如，单晶硅、c-Si)、硅锗(SiGe)、砷化镓(GaAs)、锗(Ge)、绝缘体上硅(SOI)、或任何其它适当的材料。
在一些具体示例中，所述待切割晶圆102的直径可以包括150mm、200mm、300mm以及450mm等，但不局限于此。
本公开实施例中第一切割子装置与所述第二切割子装置两者用于切割的类型包括激光切割、刀片切割、等离子体切割，且不限于此。在一些具体示例中，所述第一切割子装置与所述第二切割子装置两者用于切割的类型可以相同，也可以不同。示例性的，第一切割子装置与第二切割子装置可均用于激光切割，或者均用于刀片切割；或者第一切割子装置与第二切割子装置中的其中一者用于激光切割，另一者进行刀片切割。
在一些实施例中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
在一些实施例中，如图1所示，所述第一切割子装置包括第一聚焦镜103，所述第一聚焦镜103位于所述第一侧；所述第二切割子装置包括第二聚焦镜104，所述第二聚焦镜104位于所述第二侧；在对所述待切割晶圆102进行切割时，所述第一聚焦镜103与所述第二聚焦镜104沿所述第一方向对齐。
这里，所述第一聚焦镜103与所述第二聚焦镜104沿所述第一方向对齐，可以理解为第一聚焦镜103和第二聚焦镜104的连线与承载台101的 厚度方向平行。
可以理解的是，本公开实施例中提供的晶圆切割装置的第一聚焦镜103和第二聚焦镜104分别位于承载台101的两侧，且在进行切割时，第一聚焦镜103和第二聚焦镜104沿承载台101厚度方向对齐，这样使得在对晶圆正反两面同时进行切割时，能够实现正面切割位置和反面切割位置较好的对准。
这里，待切割晶圆102的正面和背面是指待切割晶圆102厚度方面相对的两面，在一些具体示例中，待切割晶圆102的正面是指在半导体基底上形成元件、叠层、连接线以及焊盘等的一面。
下面将具体介绍如何使得第一聚焦镜103和第二聚焦镜104沿第一方向对齐，本公开主要提供两种方案。
方案一：
在一些实施例中，所述第一聚焦镜103和所述第二聚焦镜104在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜103与所述第二聚焦镜104沿所述第一方向对齐。
可以理解的是，第一聚焦镜103和所述第二聚焦镜104在晶圆切割装置中的位置是固定的，第一聚焦镜103与第二聚焦镜104沿所述第一方向对齐，这样使得在对晶圆进行正反两面同时切割时，正面切割和反面切割的位置是对准的。通过固定第一聚焦镜103和第二聚焦镜104在晶圆切割装置中的位置实现对准，这样使得可以减少频繁调节第一聚焦镜103和第二聚焦镜104的相对位置而带来的误差，也能省去频繁调节第一聚焦镜103和第二聚焦镜104带来的额外工作量。
方案二：
在一些实施例中，所述第一聚焦镜103和所述第二聚焦镜104在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆102进行切割时，通 过调整所述第一聚焦镜103和所述第二聚焦镜104的位置，使得所述第一聚焦镜103与所述第二聚焦镜104沿所述第一方向对齐。
可以理解的是，第一聚焦镜103和所述第二聚焦镜104在晶圆切割装置中的位置也可以是不固定的，可以在切割过程中通过电脑控制第一聚焦镜103和所述第二聚焦镜104的对准。第一聚焦镜103和所述第二聚焦镜104在晶圆切割装置中的位置可移动，这样使得第一聚焦镜103和第二聚焦镜104的位置不受限定，可以根据实际需求对第一聚焦镜103和第二聚焦镜104的相对位置进行调节，这样使得更加灵活，能够满足更多的切割需求。
在对待切割晶圆102进行切割时，第一聚焦镜103通过第一激光实现对待切割晶圆102的切割，第二聚焦镜104通过第二激光实现对待切割晶圆102的切割，对于具体如何提供第一激光和第二激光，本公开实施例提供了多种方案。
首先，对于提供第一激光和第二激光的激光器而言，第一激光和第二激光可以由两个激光器分别提供，第一激光和第二激光还可以由同一激光器一起提供。
在一些实施例中，所述第一切割子装置还包括第一激光器105，所述第一激光器105用于向所述第一聚焦镜103提供第一激光；
所述第二切割子装置还包括第二激光器106，所述第二激光器106用于向所述第二聚焦镜104提供第二激光。
在一些实施例中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器105；所述第一激光器105用于向所述第一聚焦镜103提供第一激光，并用于向所述第二聚焦镜104提供第二激光。
在一些具体示例中，可以将第一激光器105发出的光分频为两束激光，再分别提供给第一聚焦镜103和第二聚焦镜104。
当第一激光和第二激光分别由第一激光器105和第二激光器106提供的情况下，第一激光器105和第二激光器106的位置可包括多种情况。下面将具体介绍第一激光器105和第二激光器106的位置。
如图1、图3、图4所示，第一激光器105、第二激光器106可分别位于第一侧和第二侧。
在一些实施例中，如图1所示，所述第一激光器105位于所述第一侧，所述第二激光器106位于所述第二侧；所述第一激光器105与所述第一聚焦镜103沿所述第一方向对齐，所述第二激光器106与所述第二聚焦镜104沿所述第一方向对齐。
这里，所述第一激光器105与所述第一聚焦镜103沿所述第一方向对齐，所述第二激光器106与所述第二聚焦镜104沿所述第一方向对齐，可以理解为：第一激光器105的出光口与第一聚焦镜103的入光口的连线平行于承载台101的厚度方向；第二激光器106的出光口与第二聚焦镜104的入光口的连线平行于承载台101的厚度方向。
可以理解的是，第一激光器105与第一聚焦镜103沿第一方向对齐，第二激光器106与第二聚焦镜104沿第一方向对齐，这样使得第一聚焦镜103产生的激光可直接照射进第一聚焦镜103中，第二聚焦镜104产生的激光可直接照射进第二聚焦镜104中，第一方面，产生的激光到达聚焦镜的路径较短，可减小激光在长路径下传播过程中的能量损失；第二方面，使得晶圆切割装置的结构部件较少。
在另一些实施例中，第一激光器105与所述第一聚焦镜103沿第一方向也可以不对齐，和/或，第二激光器106与所述第二聚焦镜104沿第一方向也可以不对齐。如图3以及图4所示，在第一激光器105与所述第一聚焦镜103沿第一方向不对齐，和/或，第二激光器106与所述第二聚焦镜104沿第一方向不对齐的情况下，可以通过设置光路转换结构件将第一激光引 入第一聚焦镜，并将第二激光引入第二聚焦镜。
本公开实施例中，所述光路转换结构件包括反射镜，具体的可以包括第一反射镜109和第二反射镜113，通过设置第一反射镜109和第二反射镜113使得第一激光进入第一聚焦镜103，使得第二激光进入第二聚焦镜104。
在一些实施例中，如图5所示，所述第一激光器105、所述第二激光器106均位于所述第一侧，或，如图6所示，所述第一激光器105、所述第二激光器106均位于所述第二侧；
所述第一切割子装置还包括至少一个第一反射镜109；所述第一反射镜109用于将所述第一激光器105产生的第一激光引入所述第一聚焦镜103中；
所述第二切割子装置还包括至少一个第二反射镜113；所述第二反射镜113用于将所述第二激光器106产生的第二激光引入所述第二聚焦镜104中。
需要说明的是，图5以及图6中，第一激光器105和第二激光器106射出的激光方向相反，且第一激光器105和第二激光器106射出的激光方向均与第一方向垂直，第一切割子装置包括三个第一反射镜109，第二切割子装置包括三个第二反射镜113，但实际应用中第一激光器105和第二激光器106的相对位置、第一反射镜109和第二反射镜113的数量不限于此，在一些具体示例中，可以根据从第一激光器发出的第一激光和从第二激光器发出的第二激光的光路方向来具体设置第一反射镜和第二反射镜的数量以及位置，只要第一激光能进入第一聚焦镜103，且第二激光能进入第二聚焦镜104，从而实现对待切割晶圆的切割即可。
下面以图6为例对第一反射镜和第二反射镜的设置进行具体说明。图6中设置有三个第一反射镜109，从第一激光器105发出的第一激光的方向水平向右，先通过第一个第一反射镜将第一激光的光路方向改变成竖直向上， 由于入射角等于反射角，因此可以设置第一个反射镜与水平方向的夹角a1为45°；再通过第二个第一反射镜将第一激光的光路方向由竖直向上的方向改变成水平向左的方向，同理第二个第一反射镜与水平方向的夹角a2可以设置为135°；再通过第三个第一反射镜将第一激光的光路方向转变为竖直向下，从而引入第一聚焦镜中，同理第三个第一聚焦镜与水平方向的夹角a3可以设置为45°。第二反射镜的设置与第一反射镜的设置同理，第一个第二反射镜与水平方向的夹角a4为135°，第二个第二反射镜与水平方向的夹角a5为45°，第三个第二反射镜与水平方向的夹角a6为45°，从而使得第二激光被引入进第二聚焦镜中。
可以理解的是，第一激光器105和第二激光器106位于同一侧可以减小晶圆切割装置的高度，避免晶圆切割装置太高使得不利于安装或使用。
如图7所示，还可以综合考虑晶圆切割装置的高度以及结构部件简单度，使得第一激光器105和第二激光器106位于同一侧，从第一激光器105和第二激光器106出来的激光均竖直向下，第一激光器105产生的第一激光直接进入第一聚焦镜103，第二激光器106产生的第二激光通过第二反射镜113引入第二聚焦镜104中。
需要说明的是，图1、图3-图7仅为示例，并不用于限定本公开实施例中的第一切割子装置和第二切割子装置，图1、图3-图7中的第一切割子装置和第二切割子装置在不冲突的情况下还可以相互组合。
本公开实施例中，第一激光的波长和第二激光的波长可以相同，也可以不同。示例性的，若待切割晶圆的正面金属层较多，反面介质层较多，则可以选择较短波长的激光对晶圆的正面进行切割，选择较长波长的激光对晶圆的反面进行切割，在实际应用中可根据实际待切割晶圆正反两面的材质进行选择。
本公开实施例中，在对晶圆切割装置的其它部件进行改进的同时，对 承载台101也可以进行相应的设置，图8以及图9为本公开实施例示出的一种承载台101的俯视结构示意图，需要说明的是图9中为了更清晰的展示出承载台101与待切割晶圆102的关系，展示了透视图，实际承载台101位于待切割晶圆102之下。
在一些实施例中，如图8所示，所述承载台101设置有开口110，如图9所示，当所述待切割晶圆置于所述承载台101时，所述开口110暴露出所述待切割晶圆的切割道108。
可以理解的是，承载台101设置有开口110，开口110暴露出所述待切割晶圆的切割道108，从而可以使得实现在对待切割晶圆进行正面切割的同时，不影响对待切割晶圆反面的切割。
在一些实施例中，所述承载台101在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆102进行切割时，通过移动所述承载台101对所述待切割晶圆102的不同位置进行切割。
在未来异构集成切割需求是多样且复杂的，本公开实施例中的晶圆切割装置，由于可以实现对待切割晶圆102正反两面同时进行切割，可以满足更广泛的切割需求，例如可以满足在芯片的堆叠层数越来越高的情况下的切割需求。
本公开实施例提供了一种晶圆切割装置，包括：承载台101、第一切割子装置、第二切割子装置；其中，所述承载台101，用于承载待切割晶圆102；所述第一切割子装置，用于从第一侧对所述待切割晶圆102进行切割；所述第二切割子装置，用于从第二侧对所述待切割晶圆102进行切割；所述第一侧以及所述第二侧为所述承载台101沿第一方向相对的两侧，所述第一方向为所述承载台101的厚度方向。本公开实施例中，晶圆切割装置包括第一切割子装置以及第二切割子装置，并分别用于从承载台101厚度方向的两侧对待切割晶圆102进行切割，一方面，本公开实施例的晶圆切 割装置可实现同时对待切割晶圆102进行正反两面的切割，这样可以提高切割效率；另一方面，由于可以同时对待切割晶圆正反两面进行切割，可以通过对第一切割子装置以及第二切割子装置的部件进行相应设置，从而改善在分开对待切割晶圆102正反两面进行切割过程中正反两面切割位置较难对准的问题，从而可以有效提高切割后芯片的良率。
基于上述晶圆切割装置，本公开实施例还提供了一种晶圆切割方法，如图10所示，所述方法包括：
步骤S1001：将待切割晶圆置于承载台上；
步骤S1002：利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。
在对待切割晶圆进行切割时，可利用第一切割子装置和第二切割子装置同时对待切割晶圆的正反两面切割，从而有效提高切割效率，且在同时进行正反两面的切割时，可针对待切割晶圆同一位置同时进行正反两面的切割，使得有效改善正反两面切割时位置的对准问题。
在一些实施例中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
在一些实施例中，所述第一切割子装置包括第一聚焦镜，所述第一聚焦镜位于所述第一侧；所述第二切割子装置包括第二聚焦镜，所述第二聚焦镜位于所述第二侧；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
在对所述待切割晶圆进行切割时，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
在对待切割晶圆进行切割时，对于具体如何使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，本公开实施例提供两种方案。
方案一：
在一些实施例中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，包括：
所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，在对所述待切割晶圆进行切割时，不调整所述第一聚焦镜和所述第二聚焦镜的位置。
方案二：
在一些实施例中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，包括：
所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，调整所述第一聚焦镜和所述第二聚焦镜的位置，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
在一些实施例中，所述第一切割子装置还包括第一激光器，所述第二切割子装置还包括第二激光器；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第二激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
在一些实施例中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第一激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
在一些实施例中，所述承载台在所述晶圆切割装置中的位置可移动；
所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
在对所述待切割晶圆进行切割时，移动所述承载台，对所述待切割晶圆的不同位置进行切割。
应理解，说明书通篇中提到的“一个实施例”或“一实施例”意味着与实施例有关的特定特征、结构或特性包括在本公开的至少一个实施例中。因此，在整个说明书各处出现的“在一个实施例中”或“在一实施例中”未必一定指相同的实施例。此外，这些特定的特征、结构或特性可以任意适合的方式结合在一个或多个实施例中。应理解，在本公开的各种实施例中，上述各过程的序号的大小并不意味着执行顺序的先后，各过程的执行顺序应以其功能和内在逻辑确定，而不应对本公开实施例的实施过程构成任何限定。上述本公开实施例序号仅仅为了描述，不代表实施例的优劣。
本公开所提供的几个方法实施例中所揭露的方法，在不冲突的情况下可以任意组合，得到新的方法实施例。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (19)

  1. 一种晶圆切割装置，包括：承载台、第一切割子装置、第二切割子装置；其中，
    所述承载台，用于承载待切割晶圆；
    所述第一切割子装置，用于从第一侧对所述待切割晶圆进行切割；
    所述第二切割子装置，用于从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。
  2. 根据权利要求1所述的晶圆切割装置，其中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
  3. 根据权利要求1所述的晶圆切割装置，其中，所述第一切割子装置包括第一聚焦镜，所述第一聚焦镜位于所述第一侧；所述第二切割子装置包括第二聚焦镜，所述第二聚焦镜位于所述第二侧；在对所述待切割晶圆进行切割时，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
  4. 根据权利要求3所述的晶圆切割装置，其中，所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
  5. 根据权利要求3所述的晶圆切割装置，其中，所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，通过调整所述第一聚焦镜和所述第二聚焦镜的位置，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
  6. 根据权利要求3所述的晶圆切割装置，其中，所述第一切割子装置还包括第一激光器，所述第一激光器用于向所述第一聚焦镜提供第一激光；
    所述第二切割子装置还包括第二激光器，所述第二激光器用于向所述 第二聚焦镜提供第二激光。
  7. 根据权利要求3所述的晶圆切割装置，其中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器；所述第一激光器用于向所述第一聚焦镜提供第一激光，并用于向所述第二聚焦镜提供第二激光。
  8. 根据权利要求6所述的晶圆切割装置，其中，所述第一激光器位于所述第一侧，所述第二激光器位于所述第二侧；所述第一激光器与所述第一聚焦镜沿所述第一方向对齐，所述第二激光器与所述第二聚焦镜沿所述第一方向对齐。
  9. 根据权利要求6所述的晶圆切割装置，其中，所述第一激光器、所述第二激光器均位于所述第一侧，或，所述第一激光器、所述第二激光器均位于所述第二侧；
    所述第一切割子装置还包括至少一个第一反射镜；所述第一反射镜用于将所述第一激光器产生的第一激光引入所述第一聚焦镜中；
    所述第二切割子装置还包括至少一个第二反射镜；所述第二反射镜用于将所述第二激光器产生的第二激光引入所述第二聚焦镜中。
  10. 根据权利要求1所述的晶圆切割装置，其中，所述承载台设置有开口，当所述待切割晶圆置于所述承载台时，所述开口暴露出所述待切割晶圆的切割道。
  11. 根据权利要求1所述的晶圆切割装置，其中，所述承载台在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，通过移动所述承载台对所述待切割晶圆的不同位置进行切割。
  12. 一种晶圆切割方法，包括：
    将待切割晶圆置于承载台上；
    利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割；所述第一侧以及所述 第二侧为所述承载台沿第一方向相对的两侧，所述第一方向为所述承载台的厚度方向。
  13. 根据权利要求12所述的方法，其中，所述第一切割子装置与所述第二切割子装置均用于激光切割。
  14. 根据权利要求12所述的方法，其中，所述第一切割子装置包括第一聚焦镜，所述第一聚焦镜位于所述第一侧；所述第二切割子装置包括第二聚焦镜，所述第二聚焦镜位于所述第二侧；
    所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
    在对所述待切割晶圆进行切割时，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
  15. 根据权利要求14所述的方法，其中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，包括：
    所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置不可移动，所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，在对所述待切割晶圆进行切割时，不调整所述第一聚焦镜和所述第二聚焦镜的位置。
  16. 根据权利要求14所述的方法，其中，所述使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐，包括：
    所述第一聚焦镜和所述第二聚焦镜在所述晶圆切割装置中的位置可移动，在对所述待切割晶圆进行切割时，调整所述第一聚焦镜和所述第二聚焦镜的位置，使得所述第一聚焦镜与所述第二聚焦镜沿所述第一方向对齐。
  17. 根据权利要求14所述的方法，其中，所述第一切割子装置还包括第一激光器，所述第二切割子装置还包括第二激光器；
    所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
    利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第二激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
  18. 根据权利要求14所述的方法，其中，所述第一切割子装置、所述第二切割子装置均还包括第一激光器；
    所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
    利用所述第一激光器向所述第一聚焦镜提供第一激光，从而从第一侧对所述待切割晶圆进行切割；并利用所述第一激光器向所述第二聚焦镜提供第二激光，从而从第二侧对所述待切割晶圆进行切割。
  19. 根据权利要求12所述的方法，其中，所述承载台在所述晶圆切割装置中的位置可移动；
    所述利用第一切割子装置从第一侧对所述待切割晶圆进行切割，并利用第二切割子装置从第二侧对所述待切割晶圆进行切割，包括：
    在对所述待切割晶圆进行切割时，移动所述承载台，对所述待切割晶圆的不同位置进行切割。
PCT/CN2023/093949 2023-05-12 2023-05-12 晶圆切割装置及晶圆切割方法 Ceased WO2024234155A1 (zh)

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