WO2024207201A1 - 声波谐振器及其制作方法 - Google Patents

声波谐振器及其制作方法 Download PDF

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Publication number
WO2024207201A1
WO2024207201A1 PCT/CN2023/086200 CN2023086200W WO2024207201A1 WO 2024207201 A1 WO2024207201 A1 WO 2024207201A1 CN 2023086200 W CN2023086200 W CN 2023086200W WO 2024207201 A1 WO2024207201 A1 WO 2024207201A1
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layer
acoustic wave
substrate
metal electrode
wave resonator
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French (fr)
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左成杰
杨凯
林福宏
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University of Science and Technology of China USTC
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University of Science and Technology of China USTC
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator

Definitions

  • At least one embodiment of the present disclosure relates to an acoustic wave resonator, and more particularly to an acoustic wave resonator and a method for manufacturing the same.
  • RF filter As one of the important modules of RF front-end, the performance of RF filter directly determines the ability of signal to stand out from the noise in the communication system. With the popularity of smart phones, the electromagnetic spectrum below 6GHz is fully allocated, and the evolving wireless communication industry is turning to higher frequency bands and wider bandwidths to achieve faster data transmission rates. Recently, the FCC opened the 12.7-13.25GHz band for mobile broadband or other extended uses. At the same time, more high-frequency bands will be explored to meet the growing demand. Mobile radio frequency (RF) front-ends above 10GHz can exceed the performance of their counterparts below 6GHz, which will be a potential solution for 5G wireless communications. In order to make full use of the higher spectrum, acoustic wave resonators in higher frequency bands must be explored.
  • RF radio frequency
  • the resonant frequency of the acoustic wave resonator is mainly determined by the thickness of the piezoelectric film.
  • the thickness of the piezoelectric film needs to be continuously reduced.
  • One is to use the high-order modes of the Lamb wave resonator, which has a larger sound velocity and can work at a higher frequency.
  • the electromechanical coupling coefficient of the acoustic wave resonator will drop rapidly, which is not conducive to meeting the bandwidth requirements of the high frequency band.
  • the other is to reduce the thickness of the piezoelectric film.
  • the thickness of the piezoelectric film enters the nanometer level, but the crystallinity of the directly grown nanometer-level piezoelectric film is difficult to meet the application requirements.
  • This method One is that the uniformity of the directly transferred nanometer-level piezoelectric film is difficult to control, and the other problem is that the nanometer-level piezoelectric film is easy to break when releasing the buffer layer.
  • the present disclosure provides an acoustic wave resonator and a method for manufacturing the same, forming a support anchor structure between a first portion and a second portion of a piezoelectric layer to prevent the piezoelectric layer from deforming when the substrate is released, and achieving a high quality factor under ultra-high resonance frequency conditions.
  • the present disclosure provides an acoustic wave resonator, comprising: a substrate, a part of the substrate is released to form a cavity; a piezoelectric layer, comprising a first part located on the cavity and a second part located on the substrate that is not released, the piezoelectric layer being suitable for exciting an acoustic wave under the action of a transverse electric field; a support anchor unit, the support anchor unit being arranged between the first part of the piezoelectric layer and the second part of the piezoelectric layer and being suitable for connecting the first part and the second part; and a metal electrode layer formed on the piezoelectric layer, the metal electrode layer being provided on the piezoelectric layer.
  • the pole layer includes a metal electrode array composed of at least one pair of positive and negative metal electrodes arranged alternately, and the metal electrode array forms a transverse electric field; wherein the support anchor unit includes at least one pair of support anchors, and at least one pair of support anchors are respectively arranged on both sides of the first part of the piezoelectric layer along the extension direction of the metal electrodes.
  • the present disclosure also provides a method for manufacturing an acoustic wave resonator, which is suitable for manufacturing the above-mentioned acoustic wave resonator, comprising: forming a piezoelectric film on a substrate; forming a metal electrode layer on the piezoelectric film; forming a mask layer on the metal electrode layer, and patterning the mask layer to obtain a patterned mask layer; etching the piezoelectric film using the patterned mask layer to obtain a piezoelectric layer and a support anchor; releasing the substrate using a dry release method or a wet release method to form a cavity between the substrate and the piezoelectric layer; and removing the patterned mask layer using a buffered oxide etching solution; wherein the support anchor is formed between the first part and the second part to suppress deformation of the piezoelectric layer when the substrate is released.
  • the piezoelectric layer due to the residual stress between the substrate and the piezoelectric layer, the piezoelectric layer will be deformed during the process of releasing the substrate located under the piezoelectric layer; by adding a supporting anchor structure, the stress between the substrate and the piezoelectric layer is reduced, and the deformation of the piezoelectric layer when the substrate is released can be avoided, thereby preventing the stress from causing the piezoelectric layer to break, thereby improving the stability of the acoustic wave resonator.
  • a support anchor is arranged between the first part and the second part of the piezoelectric layer along the extension direction of the metal electrode to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer, so as to reduce the leakage of the acoustic wave from the first part of the piezoelectric layer to the second part of the piezoelectric layer in the direction of acoustic wave propagation, reduce the loss of the acoustic wave, and improve the electromechanical coupling coefficient and quality factor of the acoustic wave resonator.
  • FIG1 is a three-dimensional schematic diagram of an acoustic wave resonator according to an embodiment of the present disclosure
  • FIG2 is a three-dimensional schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • FIG3 is a three-dimensional schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • FIG4 is a three-dimensional schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • FIG5 is a three-dimensional schematic diagram of an acoustic wave resonator according to yet another embodiment of the present disclosure.
  • FIG6 is a three-dimensional schematic diagram of an acoustic wave resonator according to yet another embodiment of the present disclosure.
  • FIG7 is a schematic top view of an acoustic wave resonator according to another embodiment of the present disclosure.
  • FIG8 is a schematic cross-sectional view of an acoustic wave resonator along the line A-A' in FIG7 according to yet another embodiment of the present disclosure
  • FIG9 is a schematic cross-sectional view of an acoustic wave resonator along the line B-B' in FIG7 according to yet another embodiment of the present disclosure.
  • FIG10 is a schematic flow chart of a method for manufacturing an acoustic wave resonator according to an embodiment of the present disclosure
  • FIGS. 11A to 11E are schematic diagrams of a process for manufacturing an acoustic wave resonator according to an embodiment of the present disclosure
  • FIG12 is a schematic cross-sectional view of an acoustic wave resonator along line AA′ in FIG7 according to yet another embodiment of the present disclosure
  • FIG13 is a schematic cross-sectional view of an acoustic wave resonator along the line B-B' in FIG7 according to yet another embodiment of the present disclosure
  • FIG14 is a schematic cross-sectional view of an acoustic wave resonator along the line A-A' in FIG7 according to yet another embodiment of the present disclosure
  • FIG15 is a schematic cross-sectional view of an acoustic wave resonator along the line B-B' in FIG7 according to yet another embodiment of the present disclosure.
  • FIG. 16 is a comparison diagram of simulation performances of the acoustic wave resonator according to Example 1 of the present disclosure and the acoustic wave resonator according to Comparative Example 1.
  • FIG. 16 is a comparison diagram of simulation performances of the acoustic wave resonator according to Example 1 of the present disclosure and the acoustic wave resonator according to Comparative Example 1.
  • the present disclosure provides an acoustic wave resonator and a method for manufacturing the same.
  • FIG. 1 is a three-dimensional schematic diagram of an acoustic wave resonator according to an embodiment of the present disclosure.
  • the present disclosure provides an acoustic wave resonator, as shown in reference figure 1, comprising: a substrate 1, a partial area of the substrate 1 is released to form a cavity; a piezoelectric layer 5, comprising a first part located on the cavity and a second part located on the substrate 1 that is not released, the piezoelectric layer 5 is suitable for exciting acoustic waves under the action of a transverse electric field; a support anchor unit, the support anchor unit is arranged between the first part of the piezoelectric layer 5 and the second part of the piezoelectric layer 5, and is suitable for connecting the first part and the second part; and a metal electrode layer 3, formed on the piezoelectric layer 5, the metal electrode layer 3 includes a metal electrode array composed of at least one positive and negative metal electrode alternately arranged, and the metal electrode array forms a transverse electric field; wherein the support anchor unit includes at least one pair of support anchors 6, and the at least one pair of support anchors 6 are respectively arranged on both
  • a support anchor is arranged between the first part and the second part of the piezoelectric layer along the extension direction of the metal electrode to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer, so as to reduce the leakage of sound waves from the first part of the piezoelectric layer to the second part of the piezoelectric layer in the direction of sound wave propagation, reduce the loss of sound waves, and improve the electromechanical coupling coefficient and quality factor of the acoustic wave resonator.
  • the support anchor unit includes a pair of support anchors 6 , which are asymmetrically arranged on both sides of the first portion of the piezoelectric layer 5 along the extension direction of the metal electrode.
  • FIG. 2 is a three-dimensional schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • the support anchor unit includes a pair of support anchors 6 symmetrically arranged on both sides of the first portion of the piezoelectric layer 5 along the extending direction of the metal electrode.
  • FIG. 3 is a three-dimensional schematic diagram of an acoustic wave resonator according to yet another embodiment of the present disclosure.
  • the support anchor unit includes a plurality of pairs of support anchors 6 , and the plurality of pairs of support anchors 6 are symmetrically arranged on both sides of the first portion of the piezoelectric layer 5 along the extension direction of the metal electrode.
  • FIG. 4 is a three-dimensional schematic diagram of an acoustic wave resonator according to yet another embodiment of the present disclosure.
  • the support anchor unit includes a plurality of pairs of support anchors 6 , and the plurality of pairs of support anchors 6 are asymmetrically arranged on both sides of the first portion of the piezoelectric layer 5 along the extension direction of the metal electrode.
  • FIG. 5 is a three-dimensional schematic diagram of an acoustic wave resonator according to yet another embodiment of the present disclosure.
  • the support anchor unit includes a plurality of pairs of support anchors 6, and the plurality of pairs of support anchors 6 are respectively asymmetrically arranged on both sides of the first portion of the piezoelectric layer 5 along the extension direction of the metal electrode. And the plurality of support anchors 6 arranged on each side of the first portion of the piezoelectric layer 5 are periodically arranged along the extension direction of the metal electrode.
  • Fig. 6 is a three-dimensional schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • Fig. 7 is a top view schematic diagram of an acoustic wave resonator according to another embodiment of the present disclosure.
  • Fig. 8 is a cross-sectional schematic diagram of an acoustic wave resonator along A-A' in Fig. 7 according to another embodiment of the present disclosure.
  • Fig. 9 is a cross-sectional schematic diagram of an acoustic wave resonator along B-B' in Fig. 7 according to another embodiment of the present disclosure.
  • the support anchor unit includes a plurality of pairs of support anchors 6. 6 are symmetrically arranged on both sides of the first part of the piezoelectric layer 5 along the extension direction of the metal electrode. And the multiple support anchors 6 arranged on each side of the first part of the piezoelectric layer 5 are periodically arranged along the extension direction of the metal electrode.
  • a plurality of support anchors 6 are periodically arranged along the aperture direction of the acoustic wave resonator (i.e., the extension direction of the metal electrode, the x direction).
  • the width d1 of the support anchor 6 is set to be the same as the width d3 of the metal electrode, or the width d1 of the support anchor 6 is a multiple of the width d3 of the metal electrode, so as to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer 5, so that the sound wave propagates to the pseudo-free boundary and undergoes total reflection (acoustic impedance mismatch), thereby confining the sound wave within the resonator body, so as to reduce the leakage of the sound wave from the first part of the piezoelectric layer 5 to the second part of the piezoelectric layer 5, reduce the loss of the sound wave, and improve the electromechanical coupling coefficient and quality factor of the acoustic wave resonator.
  • the period of the support anchors 6 is set to be the same as the wavelength of the acoustic wave to form a pseudo free boundary at the edge of the first portion of the piezoelectric layer 5 to reduce the loss of the acoustic wave.
  • the width d1 of the support anchor 6 is set to be the same as the width d3 of the metal electrode, or the width d1 of the support anchor 6 is a multiple of the width d3 of the metal electrode, and the period of the support anchor 6 is set to be the same as the wavelength of the acoustic wave to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer 5 and reduce the loss of the acoustic wave.
  • the substrate 1 is formed of a high resistivity material, and the resistivity of the substrate 1 is greater than 1000 ⁇ /cm 3.
  • Using a high resistivity material as the substrate 1 to form an acoustic wave resonator can reduce the radio frequency loss of the acoustic wave resonator.
  • the substrate 1 may include a supporting substrate 11, a well-rich layer 12, and a release layer 13, which are arranged in sequence; the material of the supporting substrate 11 includes at least one of silicon, silicon nitride, silicon oxide, silicon carbide, gallium nitride, and gallium oxide; the material of the well-rich layer 12 includes but is not limited to amorphous silicon or polycrystalline silicon.
  • the release layer 13 includes one or more layers, and the material of each layer includes one of the following: silicon dioxide, silicon nitride, silicon; the thickness of the release layer 13 is 0.1 to 100 ⁇ m, for example, 0.1 ⁇ m, 1 ⁇ m, 10 ⁇ m, 50 ⁇ m, 100 ⁇ m.
  • the material of the piezoelectric layer 5 includes one of the following: lithium niobate; lithium tantalate; a composite layer material composed of lithium niobate and one or more selected from aluminum nitride and scandium-doped aluminum nitride; a composite layer material composed of lithium tantalate and one or more selected from aluminum nitride and scandium-doped aluminum nitride.
  • the thickness of the piezoelectric layer 5 is less than 700 nm, for example, may be 1 nm, 100 nm, 300 nm, 500 nm, or 700 nm.
  • the thickness of the piezoelectric film needs to be reduced.
  • the size of the piezoelectric film used for the acoustic wave resonator enters the nanometer scale. In this case, the stress of the nanometer-sized piezoelectric film increases and it is easy to break.
  • the stress between the substrate and the piezoelectric layer is reduced, the deformation of the piezoelectric layer can be avoided, and the stress can be prevented from causing the piezoelectric layer to break when the substrate is released, thereby improving the stability of the acoustic wave resonator.
  • the metal electrode layer 3 includes at least one pair of metal electrodes arranged in an array.
  • the material of the electrode includes one of the following: gold, aluminum, molybdenum, platinum, copper, titanium-gold alloy, titanium-aluminum alloy, titanium-copper alloy, chromium-gold alloy, chromium-aluminum alloy, chromium-copper alloy; the thickness of the metal electrode is 1nm ⁇ 100nm, for example, it can be 1nm, 10nm, 20nm, 50nm, 100nm; the number of metal electrodes is 1 to 250 pairs.
  • a metal electrode is formed on the support anchor 6, or no metal electrode is formed on the support anchor 6.
  • the metal electrode on the support anchor 6 can be connected to an external ground to prepare a single-port device.
  • the type of the acoustic wave resonator is not limited herein.
  • the acoustic wave resonator may be a bulk acoustic wave resonator or a Lamb wave resonator.
  • Fig. 10 is a schematic diagram of a process of manufacturing an acoustic wave resonator according to an embodiment of the present disclosure.
  • Fig. 11A to Fig. 11E are schematic diagrams of a process of manufacturing an acoustic wave resonator according to an embodiment of the present disclosure.
  • the present disclosure provides a method for manufacturing an acoustic wave resonator, which is suitable for manufacturing the above-mentioned acoustic wave resonator, referring to FIG. 10 and FIG. 11A to FIG. 11E , and includes: steps S01 to S06 .
  • step S01 a piezoelectric thin film 2 is formed on a substrate 1 .
  • the substrate 1 may include a supporting substrate 11, a well-rich layer 12, and a release layer 13, which are sequentially arranged; the well-rich layer 12 and the release layer 13 are sequentially formed on the supporting substrate 11.
  • the well-rich layer 12 may be formed by, but is not limited to, ion implantation, sputtering growth, and transfer.
  • PSC surface parasitic conductance effect
  • the piezoelectric film 2 is formed by any one of ion implantation transfer, sputtering deposition, molecular beam epitaxial deposition, and vapor phase epitaxial growth deposition.
  • step S02 a metal electrode layer 3 is formed on the piezoelectric film 2 .
  • one or more layers of metal are deposited on the piezoelectric film 2 by electron beam evaporation or magnetron sputtering, and a lift-off process is used to form the metal electrode layer 3.
  • step S03 a mask layer is formed on the metal electrode layer 3 , and the mask layer is patterned to obtain a patterned mask layer 4 .
  • the material of the mask layer includes at least one of the following: photoresist, silicon oxide, and silicon nitride.
  • step S04 the piezoelectric film 2 is etched by inductively coupled plasma etching to obtain the piezoelectric layer 5 and the support anchor 6 .
  • step S05 the substrate 1 is released by a dry release method or a wet release method to form a cavity between the substrate 1 and the piezoelectric layer 5 to release the space between the substrate 1 and the piezoelectric layer 5 .
  • the dry release method includes treating the substrate 1 with a gas such as HF, XeF 2 or the like.
  • the wet release method includes treating the substrate 1 with a hydrofluoric acid solution, BoE, a potassium hydroxide solution, or a tetramethylammonium hydroxide solution.
  • the substrate 1 when the substrate 1 includes a supporting substrate 11, a well-rich layer 12, and a release layer 13 which are arranged in sequence, a dry release method is adopted or the release layer 13 is released using a hydrofluoric acid solution or BoE to form a cavity between the well-rich layer 12 and the piezoelectric layer 5 .
  • step S06 the patterned mask layer is removed using a buffered oxide etching solution.
  • the piezoelectric film 2 is thinned by ion beam etching to make the thickness of the piezoelectric film 2 less than 700 nm, so as to produce an acoustic wave resonator with a higher resonance frequency.
  • Fig. 12 is a schematic cross-sectional view of an acoustic wave resonator along line A-A' in Fig. 7 according to another embodiment of the present disclosure.
  • Fig. 13 is a schematic cross-sectional view of an acoustic wave resonator along line B-B' in Fig. 7 according to another embodiment of the present disclosure.
  • a temperature compensation layer 7 is further covered on the metal electrode layer 3 to perform temperature compensation on the acoustic wave resonator.
  • the material of the temperature compensation layer 7 may be SiO 2 .
  • Fig. 14 is a schematic cross-sectional view of an acoustic wave resonator along line A-A' in Fig. 7 according to yet another embodiment of the present disclosure.
  • Fig. 15 is a schematic cross-sectional view of an acoustic wave resonator along line B-B' in Fig. 7 according to yet another embodiment of the present disclosure.
  • the substrate 1 is released by a dry release method or a wet release method to form a cavity between the substrate 1 and the piezoelectric layer 5, including: treating the substrate 1 with a potassium hydroxide solution or a tetramethylammonium hydroxide solution to remove the well-rich layer 12 and a portion of the support substrate 11, so as to form a cavity between the support substrate 11 and the release layer 13.
  • the release layer 13 located below the piezoelectric layer 5 serves as a temperature compensation layer.
  • a 90nm thick lithium niobate film is used to form a piezoelectric layer on a substrate with a resistivity greater than 1000 ⁇ / cm3 .
  • the width of the metal electrode ranges from 1 to 10 ⁇ m.
  • a support anchor is set between the first part and the second part of the piezoelectric layer along the extension direction of the metal electrode.
  • the width of the support anchor is the same as the width of the metal electrode.
  • the period of the support anchor is the same as the spacing between two adjacent metal electrodes of the same polarity.
  • the spacing between two adjacent metal electrodes of different polarities is 1 to 15 ⁇ m.
  • the thickness of the metal electrode ranges from 10 to 100nm to make a Lamb wave resonator. Among them, the thickness of the piezoelectric layer can be adjusted in the range of 1 to 700nm to achieve a higher resonance frequency and quality factor.
  • a 90nm thick lithium niobate film is formed on a substrate with a resistivity greater than 1000 ⁇ / cm3.
  • the piezoelectric layer is formed, the width of the metal electrode ranges from 1 to 10 ⁇ m, and no supporting anchor is arranged between the first part and the second part of the piezoelectric layer.
  • FIG. 16 is a comparison diagram of simulation performances of the acoustic wave resonator according to Example 1 of the present disclosure and the acoustic wave resonator according to Comparative Example 1.
  • FIG. 16 is a comparison diagram of simulation performances of the acoustic wave resonator according to Example 1 of the present disclosure and the acoustic wave resonator according to Comparative Example 1.
  • the simulation results show that the acoustic wave resonator manufactured in Example 1 achieves an electromechanical coupling coefficient (k 2 ) greater than 50% in the ultra-high frequency band with a resonant frequency greater than 17 GHz, and the quality factor calculated according to the 3dB-Q calculation method is greater than 1000, which well meets the performance requirements of high resonant frequency, high bandwidth, and high electromechanical coupling coefficient of the resonator in the current 5G and 6G frequency bands. Moreover, the simulation performance of the acoustic wave resonator of Example 1 is not weakened compared to the simulation performance of the acoustic wave resonator of Comparative Example 1 without a support anchor. Wherein, fs represents the resonant frequency, and fp represents the anti-resonant frequency.
  • the piezoelectric film is thinned to a thickness of less than 700nm to achieve a high resonant frequency; a high resistivity substrate is used at the same time to reduce radio frequency losses; and a support anchor structure is added, and the width of the support anchor is set to be the same as or a multiple of the width of the metal electrode, and/or the period of the support anchor is set to be the same as the wavelength of the sound wave, so as to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer to reduce the loss of the sound wave, thereby achieving a high quality factor (quality factor greater than 1000) under the condition of ultra-high resonant frequency (resonant frequency greater than 10GHz), meeting the application requirements of the 5G/6G high frequency band.
  • a support anchor between the first part and the second part of the piezoelectric layer, the performance of the acoustic wave resonator is not weakened while the stability of the acoustic wave
  • the piezoelectric layer due to the residual stress between the substrate and the piezoelectric layer, the piezoelectric layer will be deformed during the process of releasing the substrate located under the piezoelectric layer; by adding a supporting anchor structure, the stress between the substrate and the piezoelectric layer is reduced, and the deformation of the piezoelectric layer when the substrate is released can be avoided, thereby preventing the stress from causing the piezoelectric layer to break, thereby improving the stability of the acoustic wave resonator.
  • a support anchor is arranged between the first part and the second part of the piezoelectric layer along the extension direction of the metal electrode to form a pseudo-free boundary at the edge of the first part of the piezoelectric layer, so as to reduce the leakage of the acoustic wave from the first part of the piezoelectric layer to the second part of the piezoelectric layer in the direction of acoustic wave propagation, reduce the loss of the acoustic wave, and improve the electromechanical coupling coefficient and quality factor of the acoustic wave resonator.

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Abstract

本公开公开了一种声波谐振器，包括：衬底，衬底的部分区域被释放，形成有空腔；压电层，包括位于空腔上的第一部分和位于未被释放的衬底上的第二部分，压电层适用于在横向电场的作用下激发出声波；支撑锚单元，支撑锚单元设置在压电层的第一部分与压电层的第二部分之间，适用于连接第一部分和第二部分；金属电极层，形成在压电层上，包括由至少一对正负金属电极交替排布构成的金属电极阵列，金属电极阵列形成横向电场。其中，支撑锚单元包括至少一对支撑锚，分别沿金属电极延伸方向在压电层的第一部分的两侧设置。

Description

声波谐振器及其制作方法 技术领域
本公开的至少一种实施例涉及一种声波谐振器，尤其涉及一种声波谐振器及其制作方法。
背景技术
射频滤波器作为射频前端的重要模块之一，其性能的好坏直接决定了通信系统中信号在噪声中脱颖而出的能力。随着智能手机的普及，6GHz以下的电磁频谱得到充分分配，不断发展的无线通信行业转向更高的频段和更宽的带宽以实现更快的数据传输速率。最近，FCC开放12.7-13.25GHz频段用于移动宽带或其它扩展用途，同时，还将探索更多的高频频段以满足不断增长的需求。超过10GHz的移动射频(RF)前端可以超过其低于6GHz的同类产品的性能，这将是5G无线通信的潜在解决方案。为了充分利用更高的频谱，必须探索更高频段的声波谐振器。
声波谐振器的谐振频率主要由压电薄膜的厚度决定，为了满足无线通信行业对更高频段的需求，需要不断降低压电薄膜的厚度。在进入5GFR2以及更高的6G频段，目前常用的方法主要有两种，一种是利用兰姆波谐振器的高阶模态，声速更大，可以工作在更高的频率，但是随着模态的增加，声波谐振器的机电耦合系数会急速下降，不利于满足高频段的带宽需求。另一种是降低压电薄膜的厚度，此时压电薄膜的厚度进入纳米级别，但是直接生长的纳米级别的压电薄膜的结晶度很难达到应用的要求，现在主要是通过离子注入后压电薄膜的转移(smart-cut工艺)来形成纳米级别的压电薄膜。这种方法存在两个问题，一个是直接转移纳米级厚度的压电薄膜的均匀性很难控制，另一个问题是纳米级别的压电薄膜在释放缓冲层时，容易断裂。
发明内容
有鉴于此，本公开提供一种声波谐振器及其制作方法，在压电层的第一部分与第二部分之间形成支撑锚结构，以避免在释放衬底时压电层发生形变，并且在超高谐振频率的条件下实现高品质因数。
本公开提供一种声波谐振器，包括：衬底，衬底的部分区域被释放，形成有空腔；压电层，包括位于空腔上的第一部分和位于未被释放的衬底上的第二部分，压电层适用于在横向电场的作用下激发出声波；支撑锚单元，支撑锚单元设置在压电层的第一部分与压电层的第二部分之间，适用于连接第一部分和第二部分；以及金属电极层，形成在压电层上，金属电 极层包括由至少一对正负金属电极交替排布构成的金属电极阵列，金属电极阵列形成横向电场；其中，支撑锚单元包括至少一对支撑锚，至少一对支撑锚分别沿金属电极延伸方向在压电层的第一部分的两侧设置。
本公开还提供一种声波谐振器的制作方法，适用于制作上述的声波谐振器，包括：在衬底上形成压电薄膜；在压电薄膜上形成金属电极层；在金属电极层上形成掩膜层，并对掩膜层图形化处理，得到图形化的掩膜层；利用图形化的掩膜层刻蚀压电薄膜，以刻蚀得到压电层和支撑锚；采用干法释放法或者湿法释放法释放衬底，以在衬底与压电层之间形成空腔；以及利用缓冲氧化物刻蚀液去除图形化的掩膜层；其中，支撑锚形成在第一部分和第二部分之间，以在释放衬底时抑制压电层发生形变。
根据本公开上述实施例提供的声波谐振器，由于衬底与压电层之间存在残余应力，在释放位于压电层下方的衬底的过程中，会导致压电层发生形变；通过增加支撑锚结构，减少了衬底与压电层之间的应力，可以避免在释放衬底时压电层发生形变，进而可防止应力导致压电层发生断裂，提高声波谐振器的稳定性。
根据本公开上述实施例提供的声波谐振器，沿金属电极的延伸方向在压电层的第一部分与第二部分之间设置支撑锚，以在压电层的第一部分的边缘形成伪自由边界，以在声波传播方向减少声波从压电层的第一部分向压电层的第二部分的泄露，降低声波的损耗，提高声波谐振器的机电耦合系数和品质因数。
附图说明
图1为根据本公开实施例的声波谐振器的三维示意图；
图2为根据本公开另一实施例的声波谐振器的三维示意图；
图3为根据本公开又一实施例的声波谐振器的三维示意图；
图4为根据本公开又一实施例的声波谐振器的三维示意图；
图5为根据本公开又一实施例的声波谐振器的三维示意图；
图6为根据本公开又一实施例的声波谐振器的三维示意图；
图7为根据本公开又一实施例的声波谐振器的俯视示意图；
图8为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图；
图9为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图；
图10为根据本公开实施例的声波谐振器的制作方法的流程示意图；
图11A～图11E为根据本公开实施例的声波谐振器的制作过程的示意图；
图12为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图；
图13为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图；
图14为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图；
图15为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图；以及
图16为根据本公开实施例1的声波谐振器与对比例1的声波谐振器的仿真性能对比图。
【附图标记说明】
1-衬底；
11-支撑衬底；
12-富阱层；
13-释放层；
2-压电薄膜；
3-金属电极层；
4-图形化的掩膜层；
5-压电层；
6-支撑锚；
7-温度补偿层；
d1-支撑锚的宽度；
d2-支撑锚的长度；
d3-金属电极的宽度。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本公开作进一步的详细说明。但是，本公开能够以不同形式实施，而不应当解释为局限于这里提出的实施例。相反地，提供这些实施例将使公开彻底和完全，并且将本公开的范围完全地传递给本领域技术人员。在附图中，为了清楚，层和区的尺寸以及相对尺寸可能被夸大，自始至终相同附图标记表示相同元件。
在此使用的术语仅仅是为了描述具体实施例，而并非意在限制本公开。在此使用的术语“包括”、“包含”等表明了所述特征、步骤、操作和/或部件的存在，但是并不排除存在或添加一个或多个其他特征、步骤、操作或部件。
有鉴于此，为了克服衬底与压电层之间的应力，避免在释放衬底时压电层发生形变，提高声波谐振器的稳定性，本公开提供一种声波谐振器及其制作方法。
图1为根据本公开实施例的声波谐振器的三维示意图。
根据本公开的一种示例性实施例，本公开提供一种声波谐振器，参考图1所示，包括：衬底1，衬底1的部分区域被释放，形成有空腔；压电层5，包括位于空腔上的第一部分和位于未被释放的衬底1上的第二部分，压电层5适用于在横向电场的作用下激发出声波；支撑锚单元，支撑锚单元设置在压电层5的第一部分与压电层5的第二部分之间，适用于连接第一部分和第二部分；以及金属电极层3，形成在压电层5上，金属电极层3包括由至少一个正负金属电极交替排布构成的金属电极阵列，金属电极阵列形成横向电场；其中，支撑锚单元包括至少一对支撑锚6，至少一对支撑锚6分别沿金属电极延伸方向在压电层5的第一部分的两侧设置。
根据本发明的实施例，沿金属电极的延伸方向在压电层的第一部分与第二部分之间设置支撑锚，以在压电层的第一部分的边缘形成伪自由边界，以在声波传播方向减少声波从压电层的第一部分向压电层的第二部分的泄露，降低声波的损耗，提高声波谐振器的机电耦合系数和品质因数。
根据本公开的实施例，参考图1所示，支撑锚单元包括一对支撑锚6，分别沿金属电极延伸方向在压电层5的第一部分的两侧非对称设置。
图2为根据本公开另一实施例的声波谐振器的三维示意图。
根据本公开的实施例，参考图2所示，支撑锚单元包括一对支撑锚6，分别沿金属电极延伸方向在压电层5的第一部分的两侧对称设置。
图3为根据本公开又一实施例的声波谐振器的三维示意图。
根据本公开的实施例，参考图3所示，支撑锚单元包括多对支撑锚6，多对支撑锚6分别沿金属电极延伸方向在压电层5的第一部分的两侧对称设置。
图4为根据本公开又一实施例的声波谐振器的三维示意图。
根据本公开的实施例，参考图4所示，支撑锚单元包括多对支撑锚6，多对支撑锚6分别沿金属电极延伸方向在压电层5的第一部分的两侧非对称设置。
图5为根据本公开又一实施例的声波谐振器的三维示意图。
根据本公开的实施例，参考图5所示，支撑锚单元包括多对支撑锚6，多对支撑锚6分别沿金属电极延伸方向在压电层5的第一部分的两侧非对称设置。并且在压电层5的第一部分的每一侧设置的多个支撑锚6沿金属电极的延伸方向呈周期性排布。
图6为根据本公开又一实施例的声波谐振器的三维示意图。图7为根据本公开又一实施例的声波谐振器的俯视示意图。图8为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图。图9为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图。
根据本公开的实施例，参考图6～图7所示，支撑锚单元包括多对支撑锚6，多对支撑锚 6分别沿金属电极延伸方向在压电层5的第一部分的两侧对称设置。并且在压电层5的第一部分的每一侧设置的多个支撑锚6沿金属电极的延伸方向呈周期性排布。
根据本公开的实施例，参考图7～图9所示，在沿声波谐振器的孔径方向(即金属电极的延伸方向，x方向)上周期性设置多个支撑锚6。将支撑锚6的宽度d1设置为与金属电极的宽度d3相同，或者支撑锚6的宽度d1倍数于金属电极的宽度d3，以在压电层5的第一部分的边缘形成伪自由边界，使声波传播到该伪自由边界会发生全反射(声阻抗失配)，从而将声波限制在谐振器体内，以减少声波从压电层5的第一部分向压电层5的第二部分的泄露，降低声波的损耗，提高声波谐振器的机电耦合系数和品质因数。
根据本公开的实施例，将支撑锚6的周期设置为与声波的波长相同，以在压电层5的第一部分的边缘形成伪自由边界，降低声波的损耗。
根据本公开的实施例，将支撑锚6的宽度d1设置为与金属电极的宽度d3相同，或者支撑锚6的宽度d1倍数于金属电极的宽度d3，并且将支撑锚6的周期设置为与声波的波长相同，以在压电层5的第一部分的边缘形成伪自由边界，降低声波的损耗。
根据本公开的实施例，衬底1采用高电阻率的材料形成，衬底1的电阻率大于1000Ω/cm3。采用高电阻率的材料作为衬底1形成声波谐振器，可以降低声波谐振器的射频损耗。
根据本公开的实施例，衬底1可以包括依次设置的支撑衬底11、富阱层12、释放层13；支撑衬底11的材料包括硅、氮化硅、氧化硅、碳化硅、氮化镓和氧化镓中的至少一种；富阱层12的材料包括但不限于非晶硅或者多晶硅。释放层13包括一层或多层，每层的材料包括以下之一：二氧化硅、氮化硅、硅；释放层13的厚度为0.1～100μm，例如可以为0.1μm、1μm、10μm、50μm、100μm。
根据本公开的实施例，压电层5的材料包括以下之一：铌酸锂；钽酸锂；铌酸锂和选自氮化铝、掺钪氮化铝中的一种或多种组成的复合层材料；钽酸锂和选自氮化铝、掺钪氮化铝中的一种或多种组成的复合层材料。
根据本公开的实施例，压电层5的厚度小于700nm，例如可以为1nm、100nm、300nm、500nm、700nm。
需要说明的是，为了得到更高谐振频率的声波谐振器，需要降低压电薄膜的厚度。随着谐振频率的增加，用于声波谐振器的压电薄膜的尺寸进入纳米量级，在这种情况下，纳米尺寸的压电薄膜的应力增加，容易发生断裂。通过在压电层的第一部分与第二部分之间增加支撑锚结构，减少了衬底与压电层之间的应力，可以避免压电层发生形变，可防止在释放衬底时应力导致压电层发生断裂，提高声波谐振器的稳定性。
根据本公开的实施例，金属电极层3包括以阵列形式排布的至少一对金属电极。金属电 极的材料包括以下之一：金、铝、钼、铂、铜、钛金合金、钛铝合金、钛铜合金、铬金合金、铬铝合金、铬铜合金；金属电极的厚度为1nm～100nm，例如可以为1nm、10nm、20nm、50nm、100nm；金属电极的数量为1～250对。
根据本公开的实施例，支撑锚6上形成有金属电极，或者，支撑锚6上未形成有金属电极。在支撑锚6上形成有金属电极的情况下，支撑锚6上的金属电极可以与外部接地连接，以制备单端口器件。
根据本公开的实施例，上述的声波谐振器的类型在此不作限制。例如，上述的声波谐振器可以为体声波谐振器或者兰姆波谐振器。
图10为根据本公开实施例的声波谐振器的制作方法的流程示意图。图11A～图11E为根据本公开实施例的声波谐振器的制作过程的示意图。
根据本公开的一种示例性实施例，本公开提供一种声波谐振器的制作方法，适用于制作上述的声波谐振器，参考图10及图11A～图11E所示，包括：步骤S01～步骤S06。
在步骤S01，在衬底1上形成压电薄膜2。
根据本公开的实施例，衬底1可以包括依次设置的支撑衬底11、富阱层12、释放层13；在支撑衬底11上依次形成富阱层12、释放层13。富阱层12的形成方式包括但不限于离子注入、溅射生长、转移。在支撑衬底11上形成富阱层12，可以避免支撑衬底11与释放层13之间的表面寄生电导效应(PSC)，以降低声波谐振器的射频损耗。
根据本公开的实施例，压电薄膜2的形成方式包括离子注入转移、溅射法沉积、分子束外延沉积、气相外延生长沉积中的任意一种。
在步骤S02，在压电薄膜2上形成金属电极层3。
根据本公开的实施例，采用电子束蒸镀或者磁控溅射法在压电薄膜2上沉积一层或多层金属，并采用剥离工艺形成金属电极层3。
在步骤S03，在金属电极层3上形成掩膜层，并对掩膜层图形化处理，得到图形化的掩膜层4。
根据本公开的实施例，掩膜层的材料包括以下至少之一：光刻胶、氧化硅、氮化硅。
在步骤S04，采用感应耦合等离子刻蚀法刻蚀压电薄膜2，得到压电层5和支撑锚6。
在步骤S05，采用干法释放法或湿法释放法释放衬底1，以在衬底1与压电层5之间形成空腔，以释放衬底1与压电层5之间的空间。
根据本公开的实施例，干法释放法包括采用HF、XeF2等气体处理衬底1。
根据本公开的实施例，湿法释放法包括利用氢氟酸溶液、BoE、氢氧化钾溶液或者四甲基氢氧化铵溶液处理衬底1。
根据本公开的实施例，参考图8所示，在衬底1包括依次设置的支撑衬底11、富阱层12、释放层13的情况下，采用干法释放法或者利用氢氟酸溶液、BoE释放释放层13，以在富阱层12与压电层5之间形成空腔。
在步骤S06，利用缓冲氧化物刻蚀液去除图形化的掩膜层。
需要说明的是，由于直接制备得到的压电薄膜的厚度很难实现小于700nm，在衬底1上制备得到压电薄膜2后，采用离子束刻蚀法对压电薄膜2进行减薄处理，使压电薄膜2的厚度小于700nm，以制作得到具有更高谐振频率的声波谐振器。
图12为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图。图13为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图。
根据本公开的实施例，参考图12及图13所示，在金属电极层3上还覆盖有温度补偿层7，以对声波谐振器进行温度补偿。其中，温度补偿层7的材料可以为SiO2。
图14为根据本公开又一实施例的声波谐振器沿图7中A-A’的截面示意图。图15为根据本公开又一实施例的声波谐振器沿图7中B-B’的截面示意图。
根据本公开的实施例，参考图14及图15所示，采用干法释放法或湿法释放法释放衬底1，以在衬底1与压电层5之间形成空腔包括：采用氢氧化钾溶液或者四甲基氢氧化铵溶液处理衬底1，以去除富阱层12和部分支撑衬底11，以在支撑衬底11与释放层13之间形成空腔。其中，位于压电层5下方的释放层13作为温度补偿层。
下面示意性说明设计的声波谐振器的结构。需要说明的是，该举例说明只是本公开的具体实施例，并不能限制本公开的保护范围。
实施例1
以兰姆波谐振器为例，采用90nm厚的铌酸锂薄膜在电阻率大于1000Ω/cm3的衬底上形成压电层，金属电极的宽度范围在1～10μm之间，沿金属电极的延伸方向在压电层的第一部分与第二部分之间设置支撑锚，支撑锚的宽度与金属电极的宽度相同，支撑锚的周期与相邻两个同极性金属电极之间的间距相同，相邻两个不同极性的金属电极之间的间距为1～15μm，金属电极的厚度范围在10～100nm之间，制作兰姆波谐振器。其中，压电层的厚度可以在1～700nm范围内调整，以实现更高的谐振频率和品质因数。
基于MBVD(Modified Butterworth-Van Dyke)模型采用COMSOL有限元分析软件分析上述制作得到的兰姆波谐振器的仿真性能。
对比例1
以兰姆波谐振器为例，采用90nm厚的铌酸锂薄膜在电阻率大于1000Ω/cm3的衬底上形 成压电层，金属电极的宽度范围在1～10μm之间，在压电层的第一部分与第二部分之间不设置支撑锚。
基于MBVD(Modified Butterworth-Van Dyke)模型采用COMSOL有限元分析软件分析上述制作得到的兰姆波谐振器的仿真性能。
图16为根据本公开实施例1的声波谐振器与对比例1的声波谐振器的仿真性能对比图。
参考图16所示，仿真结果表明，实施例1制作得到的声波谐振器在谐振频率大于17GHz的超高频段实现大于50％的机电耦合系数(k2)，并且根据3dB-Q的计算方法计算出品质因数大于1000，很好地满足当前5G、6G频段下对于谐振器高谐振频率、高带宽、高机电耦合系数的性能要求。并且，实施例1的声波谐振器的仿真性能相比于对比例1的未设置有支撑锚的声波谐振器的仿真性能没有减弱。其中，fs表示谐振频率，fp表示反谐振频率。
根据本公开的实施例，将压电薄膜减薄至厚度小于700nm，以实现高谐振频率；同时采用高电阻率的衬底，以降低射频损耗；以及增加支撑锚结构，并将支撑锚的宽度设置为与金属电极的宽度相同或者倍数于金属电极的宽度，和/或，将支撑锚的周期设置为与声波的波长相同，以在压电层的第一部分的边缘形成伪自由边界，以减少声波损耗，进而在超高谐振频率(谐振频率大于10GHz)的条件下实现高品质因数(品质因数大于1000)，满足5G/6G高频段的应用需求。通过在压电层的第一部分与第二部分之间设置支撑锚，在提高声波谐振器稳定性的同时，没有减弱声波谐振器的性能。
根据本公开上述实施例提供的声波谐振器，由于衬底与压电层之间存在残余应力，在释放位于压电层下方的衬底的过程中，会导致压电层发生形变；通过增加支撑锚结构，减少了衬底与压电层之间的应力，可以避免在释放衬底时压电层发生形变，进而防止应力导致压电层发生断裂，提高声波谐振器的稳定性。
根据本公开上述实施例提供的声波谐振器，沿金属电极的延伸方向在压电层的第一部分与第二部分之间设置支撑锚，以在压电层的第一部分的边缘形成伪自由边界，以在声波传播方向减少声波从压电层的第一部分向压电层的第二部分的泄露，降低声波的损耗，提高声波谐振器的机电耦合系数和品质因数。
以上所述的具体实施例，对本公开的目的、技术方案和有益效果进行了进一步详细说明，应理解的是，以上所述仅为本公开的具体实施例而已，并不用于限制本公开，凡在本公开的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本公开的保护范围之内。

Claims (13)

  1. 一种声波谐振器，包括：
    衬底(1)，所述衬底(1)的部分区域被释放，形成有空腔；
    压电层(5)，包括位于所述空腔上的第一部分和位于未被释放的所述衬底(1)上的第二部分，所述压电层(5)适用于在横向电场的作用下激发出声波；
    支撑锚单元，所述支撑锚单元设置在所述压电层(5)的第一部分与所述压电层(5)的第二部分之间，适用于连接所述第一部分和所述第二部分；以及
    金属电极层(3)，形成在所述压电层(5)上，所述金属电极层(3)包括由至少一对正负金属电极交替排布构成的金属电极阵列，所述金属电极阵列形成所述横向电场；
    其中，所述支撑锚单元包括至少一对支撑锚(6)，所述至少一对支撑锚(6)分别沿所述金属电极延伸方向在所述压电层(5)的第一部分的两侧设置。
  2. 根据权利要求1所述的声波谐振器，其中，
    所述支撑锚单元包括多对支撑锚(6)，所述多对支撑锚(6)分别沿所述金属电极延伸方向在所述压电层(5)的第一部分的两侧对称设置。
  3. 根据权利要求2所述的声波谐振器，其中，在所述压电层(5)的第一部分的每一侧设置的多个支撑锚(6)沿所述金属电极的延伸方向呈周期性排布。
  4. 根据权利要求3所述的声波谐振器，其特征在于，所述支撑锚(6)的宽度与所述金属电极的宽度相同，或者所述支撑锚(6)的宽度倍数于所述金属电极的宽度；
    和/或，所述支撑锚(6)的排布周期与所述声波的波长相同。
  5. 根据权利要求1所述的声波谐振器，其中，所述衬底(1)采用高电阻率的材料形成，所述衬底(1)的电阻率大于1000Ω/cm3。
  6. 根据权利要求5所述的声波谐振器，其中，所述衬底(1)包括依次设置的支撑衬底(11)、富阱层(12)、释放层(13)；
    所述支撑衬底(11)的材料包括蓝宝石、硅、氮化硅、氧化硅、碳化硅、氮化镓、玻璃和氧化镓中的至少一种；
    所述富阱层(12)的材料包括非晶硅或者多晶硅；
    所述释放层(13)包括一层或多层，每层的材料包括以下之一：二氧化硅、氮化硅、硅；
    所述释放层(13)的厚度为0.05～100μm。
  7. 根据权利要求1所述的声波谐振器，其中，
    所述压电层(5)的材料包括以下之一：
    铌酸锂；
    钽酸锂；
    铌酸锂和选自氮化铝、掺钪氮化铝中的一种或多种组成的复合层材料；
    钽酸锂和选自氮化铝、掺钪氮化铝中的一种或多种组成的复合层材料。
  8. 根据权利要求7所述的声波谐振器，其中，所述压电层(5)的厚度小于700nm。
  9. 根据权利要求1所述的声波谐振器，其中，所述金属电极的材料包括以下之一：金、铝、钼、铂、铜、钛金合金、钛铝合金、钛铜合金、铬金合金、铬铝合金、铬铜合金；
    所述金属电极的厚度为1nm～1000nm；
    所述金属电极的数量为1～250对。
  10. 根据权利要求9所述的声波谐振器，其中，所述支撑锚(6)上形成有所述金属电极，或者
    所述支撑锚(6)上未形成有所述金属电极。
  11. 一种声波谐振器的制作方法，适用于制作如权利要求1～10任一项所述的声波谐振器，包括：
    在衬底(1)上形成压电薄膜(2)；
    在所述压电薄膜(2)上形成金属电极层(3)；
    在所述金属电极层(3)上形成掩膜层，并对所述掩膜层图形化处理，得到图形化的掩膜层(4)；
    利用所述图形化的掩膜层(4)刻蚀所述压电薄膜(2)，以刻蚀得到压电层(5)和支撑锚(6)，所述压电层(5)包括第一部分和第二部分；
    采用干法释放法或者湿法释放法释放所述衬底(1)，以在所述衬底(1)与所述压电层(5)之间形成空腔；以及
    利用缓冲氧化物刻蚀液去除所述图形化的掩膜层(4)；
    其中，所述支撑锚(6)形成在所述第一部分和所述第二部分之间，以在释放所述衬底(1)时抑制所述压电层(5)发生形变。
  12. 根据权利要求11所述的制作方法，其中，
    在衬底(1)上形成压电薄膜(2)之后，所述制作方法还包括：对所述压电薄膜(2)进行减薄处理，使所述压电薄膜(2)的厚度小于700nm。
  13. 根据权利要求11所述的制作方法，其中，所述衬底(1)包括依次设置的支撑衬底(11)、富阱层(12)、释放层(13)，
    采用干法释放法或者湿法释放法释放所述释放层(13)，以在所述富阱层(12)与所述压 电层(5)之间形成空腔。
PCT/CN2023/086200 2023-04-04 2023-04-04 声波谐振器及其制作方法 Ceased WO2024207201A1 (zh)

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