WO2024157863A1 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
WO2024157863A1
WO2024157863A1 PCT/JP2024/001205 JP2024001205W WO2024157863A1 WO 2024157863 A1 WO2024157863 A1 WO 2024157863A1 JP 2024001205 W JP2024001205 W JP 2024001205W WO 2024157863 A1 WO2024157863 A1 WO 2024157863A1
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WO
WIPO (PCT)
Prior art keywords
conductive
thickness direction
semiconductor device
conductive columnar
semiconductor
Prior art date
Application number
PCT/JP2024/001205
Other languages
French (fr)
Japanese (ja)
Inventor
宏明 青山
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ローム株式会社
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Publication date
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Publication of WO2024157863A1 publication Critical patent/WO2024157863A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads

Definitions

  • This disclosure relates to a semiconductor device.
  • Patent Document 1 discloses an example of a conventional semiconductor device.
  • the semiconductor device disclosed in this document includes leads, a semiconductor element, and a sealing resin.
  • the sealing resin covers a portion of the leads and the semiconductor element.
  • the semiconductor element is mounted on the leads by flip-chip bonding.
  • the leads have a main surface facing one side in the thickness direction.
  • the semiconductor element has multiple electrodes provided on the side opposite the main surface, and the multiple electrodes are bonded to the main surface of the leads via a bonding layer made of, for example, solder.
  • the leads are conductive to the internal circuit of the semiconductor element via the multiple electrodes. Heat generated by the semiconductor element is dissipated via the multiple electrodes and leads. However, as the amount of heat generated by the semiconductor element increases with increasing current in semiconductor devices, there is a concern that heat dissipation via the multiple electrodes and leads as described above will be insufficient.
  • An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices.
  • an object of the present disclosure is to provide a semiconductor device that is suitable for improving the dissipation of heat generated in a semiconductor element.
  • the semiconductor device provided by the first aspect of the present disclosure includes a conductive member having a main surface facing one side in the thickness direction, a semiconductor element disposed on one side of the conductive member in the thickness direction and supported by the main surface, and a sealing resin covering a part of the conductive member and the semiconductor element.
  • the semiconductor element includes an element body, a plurality of first conductive columnar parts, and at least one second conductive columnar part. Each of the plurality of first conductive columnar parts is interposed between the element body and the main surface in the thickness direction and is electrically connected to the element body and the main surface. Each of the at least one second conductive columnar part is disposed on the element body and protrudes in the thickness direction. The tip end of each of the at least one second conductive columnar part in the thickness direction is covered with the sealing resin.
  • the above configuration improves the dissipation of heat generated by the semiconductor element in the semiconductor device.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view (through a sealing resin) showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a plan view (with a semiconductor element and a sealing resin transparent) showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 5 is a front view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 6 is a rear view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 7 is a right side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure.
  • FIG. 2 is a plan view (through a sealing resin) showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 3 is a
  • FIG. 8 is a left side view showing the semiconductor device according to the first embodiment of the present disclosure.
  • FIG. 9 is a cross-sectional view taken along line IX-IX in FIG.
  • FIG. 10 is a cross-sectional view taken along line XX in FIG.
  • FIG. 11 is a cross-sectional view taken along line XI-XI in FIG.
  • FIG. 12 is a cross-sectional view taken along line XII-XII in FIG.
  • FIG. 13 is a partial enlarged view (near the first conductive columnar portion) of FIG.
  • FIG. 14 is a partial enlarged view (near the second conductive columnar portion) of FIG.
  • FIG. 15 is a cross-sectional view similar to FIG. 14, showing a semiconductor device according to a first modification of the first embodiment.
  • FIG. 16 is a cross-sectional view similar to FIG. 14, showing a semiconductor device according to a second modification of the first embodiment.
  • FIG. 17 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a third modification of the first embodiment.
  • FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG.
  • FIG. 19 is a plan view (through a sealing resin) showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 20 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a second embodiment of the present disclosure.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. FIG.
  • FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG.
  • FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG.
  • FIG. 24 is a plan view (through a sealing resin) showing a semiconductor device according to a first modification of the second embodiment.
  • FIG. 25 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a first modification of the second embodiment.
  • FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG.
  • FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG.
  • FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG.
  • an object A is formed on an object B" and “an object A is formed on an object B” include “an object A is formed directly on an object B” and “an object A is formed on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A is disposed on an object B” and “an object A is disposed on an object B” include “an object A is disposed directly on an object B” and “an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified.
  • an object A is located on an object B includes “an object A is located on an object B in contact with an object B” and “an object A is located on an object B with another object interposed between the object A and the object B” unless otherwise specified.
  • an object A overlaps an object B when viewed in a certain direction includes “an object A overlaps the entire object B” and “an object A overlaps a part of an object B.”
  • a surface A faces in direction B is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.
  • the semiconductor device A10 includes a conductive member 10, a semiconductor element 20, a bonding layer 30, and a sealing resin 40.
  • the package format of the semiconductor device A10 is a QFN (Quad For Non-Lead Package).
  • the package format of the semiconductor device A10 is not limited to QFN.
  • the semiconductor element 20 is a flip-chip type LSI.
  • the semiconductor element 20 includes a switching circuit 212A and a control circuit 212B (each of which will be described in detail later). In the semiconductor device A10, the switching circuit 212A converts DC power (voltage) into AC power (voltage).
  • the semiconductor device A10 is used as one element constituting a circuit of a DC/DC converter, for example.
  • FIG. 1 is a perspective view of the semiconductor device A10.
  • FIG. 2 is a plan view of the semiconductor device A10, seen through the sealing resin 40.
  • FIG. 3 is a plan view of the semiconductor device A10, seen through the semiconductor element 20 and the sealing resin 40.
  • FIG. 4 is a bottom view of the semiconductor device A10.
  • FIG. 5 is a front view of the semiconductor device A10.
  • FIG. 6 is a rear view of the semiconductor device A10.
  • FIG. 7 is a right side view of the semiconductor device A10.
  • FIG. 8 is a left side view of the semiconductor device A10.
  • FIG. 9 is a cross-sectional view along line IX-IX in FIG. 3.
  • FIG. 10 is a cross-sectional view along line X-X in FIG. 3.
  • FIG. 9 is a cross-sectional view along line IX-IX in FIG. 3.
  • FIG. 10 is a cross-sectional view along line X-X in FIG. 3.
  • FIG. 9 is a cross-section
  • FIG. 11 is a cross-sectional view along line XI-XI in FIG. 3.
  • FIG. 12 is a cross-sectional view along line XII-XII in FIG. 3.
  • FIGS. 13 and 14 are partial enlarged views of FIG. 12.
  • the sealing resin 40 seen through is shown by an imaginary line (two-dot chain line).
  • the semiconductor element 20 and the sealing resin 40 are shown by imaginary lines (double-dashed lines).
  • the thickness direction of the conductive member 10 will be referred to as the "thickness direction z.”
  • One direction orthogonal to the thickness direction z will be referred to as the "first direction x.”
  • a direction orthogonal to both the thickness direction z and the first direction x will be referred to as the "second direction y.”
  • the semiconductor device A10 is square-shaped when viewed in the thickness direction z (in a plan view).
  • the conductive member 10 supports the semiconductor element 20 and serves as a terminal for mounting the semiconductor device A10 on a wiring board. As shown in FIGS. 9 to 12, a part of the conductive member 10 is covered with the sealing resin 40.
  • the conductive member 10 has a main surface 101 and a back surface 102 that face opposite each other in the thickness direction z.
  • the main surface 101 faces the z1 side in the thickness direction z and faces the semiconductor element 20.
  • the semiconductor element 20 is supported by the main surface 101.
  • the main surface 101 is covered with the sealing resin 40.
  • the back surface 102 faces the other side in the thickness direction z.
  • the conductive member 10 is composed of a single lead frame.
  • the constituent material of the lead frame is, for example, copper (Cu) or a copper alloy.
  • the conductive member 10 includes a plurality of leads 11A, 11B, 11C, a plurality of leads 12, and a pair of leads 13.
  • the multiple leads 11A to 11C are strip-shaped extending in the second direction y when viewed in the thickness direction z.
  • the multiple leads 11A to 11C are arranged along the second direction y.
  • the multiple leads 11A to 11C are arranged in the order of lead 11A, lead 11C, lead 11C from the y1 side of the second direction y to the y2 side of the second direction y.
  • the leads 11A and 11B are input terminals to which the DC power (voltage) to be converted in the semiconductor device A10 is input.
  • the lead 11A is the positive electrode (P terminal).
  • the lead 11B is the negative electrode (N terminal).
  • the lead 11C is an output terminal to which the AC power (voltage) converted by the switching circuit 212A configured in the semiconductor element 20 is output.
  • lead 11A is located between the multiple leads 12 and lead 11C in the second direction y.
  • Lead 11C is located between lead 11A and lead 11B in the second direction y.
  • Each of leads 11A to 11C includes a main portion 111 and a pair of side portions 112. As shown in FIGS. 3 and 4, main portion 111 extends in the first direction x.
  • the semiconductor element 20 is supported on the main surface 101 of main portion 111.
  • the pair of side portions 112 are connected to both ends of main portion 111 in the first direction x.
  • each of the pair of side portions 112 has an end surface 112A.
  • the end surface 112A is connected to both main surface 101 and back surface 102 of leads 11A to 11C and faces the first direction x.
  • the end surface 112A is exposed from the sealing resin 40.
  • lead 11B is located on the y2 side of lead 11C in the second direction y. Therefore, lead 11B is located on the y2 side of the multiple leads 11A to 11C in the second direction y.
  • Lead 11B includes a main portion 111, a pair of side portions 112, and multiple protrusions 113.
  • the multiple protrusions 113 protrude from the y2 side of the main portion 111 in the second direction y.
  • Sealing resin 40 is filled between two adjacent protrusions 113.
  • each of the multiple protrusions 113 has a minor end surface 113A.
  • the minor end surface 113A is connected to both the main surface 101 and the back surface 102 of lead 11B and faces the y2 side in the second direction y.
  • the minor end surface 113A is exposed from the sealing resin 40.
  • the multiple minor end surfaces 113A are arranged at a predetermined interval along the first direction x.
  • a notch 112B is formed in each of a pair of side portions 112 of lead 11B.
  • the notch 112B extends from the main surface 101 to the back surface 102 of lead 11B, and is recessed in the first direction x from the end surface 112A. This divides the end surface 112A into two regions spaced apart from each other in the second direction y.
  • the notch 112B is filled with sealing resin 40.
  • the area of the main surface 101 of each of the multiple leads 11A to 11C is larger than the area of the back surface 102.
  • the areas of the back surfaces 102 of each of leads 11A and 11C are equal.
  • the area of the back surface 102 of lead 11B is larger than the area of the back surfaces 102 of each of leads 11A and 11C.
  • the main surface 101 of the main portion 111 on which the semiconductor element 20 is supported may be plated with, for example, silver (Ag).
  • the back surface 102 exposed from the sealing resin 40, the pair of end faces 112A, and the multiple minor end faces 113A may be plated with, for example, tin (Sn).
  • tin plating multiple metal platings may be used, for example, layered in the order of nickel (Ni), palladium (Pd), and gold (Au).
  • the multiple leads 12 are located on the y1 side of the multiple leads 11A to 11C in the second direction y.
  • One of the multiple leads 12 is a ground terminal of the control circuit 212B configured in the semiconductor element 20.
  • power (voltage) for driving the control circuit 212B or an electrical signal to be transmitted to the control circuit 212B is input.
  • each of the multiple leads 12 has an end face 121.
  • the end face 121 is connected to both the main surface 101 and the back surface 102 of the lead 12 and faces the y1 side in the second direction y.
  • the end face 121 is exposed from the sealing resin 40.
  • the multiple end faces 121 are arranged at a predetermined interval along the first direction x.
  • the area of the main surface 101 of each of the multiple leads 12 is larger than the area of the back surface 102.
  • the areas of the back surfaces 102 of the multiple leads 12 are all equal.
  • the main surfaces 101 of the multiple leads 12 on which the semiconductor element 20 is supported may be plated with silver, for example.
  • the back surfaces 102 and end faces 121 of the multiple leads 12 exposed from the sealing resin 40 may be plated with tin, for example.
  • tin plating multiple metal platings may be used, for example, layered in this order of nickel, palladium, and gold.
  • each of the pair of leads 13 has an end face 131.
  • the end face 131 is connected to both the main surface 101 and the back surface 102, and faces the first direction x.
  • the end face 131 is exposed from the sealing resin 40.
  • the end face 131 is arranged along the second direction y together with the end faces 112A of the multiple leads 11A to 11C.
  • the area of the main surface 101 of each of the pair of leads 13 is larger than the area of the back surface 102.
  • the main surface 101 of the pair of leads 13 on which the semiconductor element 20 is supported may be plated with silver, for example.
  • the back surface 102 and end surface 131 of the pair of leads 13 exposed from the sealing resin 40 may be plated with tin, for example.
  • tin plating multiple metal platings may be used, for example, layered in this order of nickel, palladium, and gold.
  • the semiconductor element 20 is electrically connected to and supported by the conductive member 10 (plurality of leads 11A to 11C, multiple leads 12, and a pair of leads 13) by flip-chip bonding.
  • the semiconductor element 20 is covered with a sealing resin 40.
  • the semiconductor element 20 has an element body 21, multiple first conductive columnar portions 22A, multiple first conductive columnar portions 22B, multiple second conductive columnar portions 23, and an insulating film 25.
  • the element body 21 forms the main part of the semiconductor element 20. As shown in Figures 13 and 14, the element body 21 has a semiconductor substrate 211, a semiconductor layer 212, and a passivation film 213.
  • the semiconductor substrate 211 supports below it a semiconductor layer 212, a passivation film 213, a plurality of first conductive columnar sections 22A, a plurality of first conductive columnar sections 22B, a plurality of second conductive columnar sections 23, a plurality of conductive pads 24, and an insulating film 25.
  • the constituent material of the semiconductor substrate 211 is, for example, Si (silicon) or silicon carbide (SiC).
  • the semiconductor layer 212 is laminated on the side of the semiconductor substrate 211 facing the main surface 101 of the conductive member 10.
  • the semiconductor layer 212 includes multiple types of p-type and n-type semiconductors based on differences in the amount of elements to be doped.
  • the semiconductor layer 212 includes a switching circuit 212A and a control circuit 212B that is conductive to the switching circuit 212A.
  • the switching circuit 212A is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), for example.
  • the switching circuit 212A is divided into two regions, a high-voltage region (upper arm circuit) and a low-voltage region (lower arm circuit). Each region is composed of one n-channel MOSFET.
  • the control circuit 212B includes a gate driver for driving the switching circuit 212A, a bootstrap circuit corresponding to the high voltage region of the switching circuit 212A, and the like, and performs control for driving the switching circuit 212A normally.
  • a wiring layer (not shown) is formed in the semiconductor layer 212.
  • the switching circuit 212A and the control circuit 212B are mutually conductive through the wiring layer.
  • the passivation film 213 covers the lower surface of the semiconductor layer 212.
  • the passivation film 213 has electrical insulation properties.
  • the passivation film 213 is composed of, for example, a silicon oxide film (SiO 2 ) in contact with the lower surface of the semiconductor layer 212, and a silicon nitride film (Si 3 N 4 ) laminated on the silicon oxide film.
  • the passivation film 213 is provided with a plurality of openings 213A penetrating in the thickness direction z.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B protrude from the side of the element body 21 facing the main surface 101 of the conductive member 10 toward the main surface 101 of the conductive member 10.
  • the upper ends of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are conductive to the semiconductor layer 212 of the element body 21.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are electrically connected to the main surface 101 of the conductive member 10.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B function as so-called electrodes in the semiconductor element 20.
  • the multiple first conductive columnar portions 22A are electrically connected to the switching circuit 212A of the semiconductor layer 212.
  • the multiple first conductive columnar portions 22A are electrically connected to the main surfaces 101 of the multiple leads 11A to 11C.
  • the multiple leads 11A to 11C are electrically connected to the switching circuit 212A.
  • the multiple first conductive columnar portions 22B are electrically connected to the control circuit 212B of the semiconductor layer 212.
  • most of the multiple first conductive columnar portions 22B are electrically connected to the main surfaces 101 of the multiple leads 12.
  • the remaining first conductive columnar portions 22B are electrically connected to the main surfaces 101 of the pair of leads 13. As a result, the multiple leads 12 and the pair of leads 13 are electrically connected to the control circuit 212B.
  • each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B is electrically connected to the semiconductor layer 212 of the element body 21 through one of the multiple conductive pads 24.
  • the multiple conductive pads 24 are arranged on the z2 side of the semiconductor layer 212 in the thickness direction z and are in contact with the semiconductor layer 212. As a result, each of the multiple conductive pads 24 is electrically connected to one of the switching circuit 212A and the control circuit 212B of the semiconductor layer 212.
  • the conductive pad 24 is made of a material that includes aluminum (Al) or copper. Alternatively, the conductive pad 24 may be made of multiple metal layers that are stacked in this order from the semiconductor layer 212 downward, including copper, nickel, and palladium.
  • the conductive pad 24 is in contact with the passivation film 213 of the element body 21. A part of the conductive pad 24 is exposed from the opening 213A of the passivation film 213.
  • the first conductive columnar portions 22A and 22B protrude from the portion of the conductive pad 24 exposed from the opening 213A toward the main surface 101 of the conductive member 10.
  • the first conductive columnar portions 22A and 22B are, for example, cylindrical.
  • the constituent material of the first conductive columnar portions 22A and 22B includes, for example, copper.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are made of, for example, metal plating.
  • the tip 221 of the first conductive columnar portion 22A, 22B has a tip surface 221A and a side surface 221B.
  • the tip surface 221A faces the main surface 101 of the conductive member 10.
  • the side surface 221B is connected to the tip surface 221A and faces a direction perpendicular to the thickness direction z.
  • the tip surface 221A of the first conductive columnar portion 22A, 22B is flat and parallel to the main surface 101 of the conductive member 10.
  • the tip surface 221A of the first conductive columnar portion 22A, 22B may be concave toward the element body 21, or may be convex toward the main surface 101 of the conductive member 10.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are formed, for example, by electrolytic plating.
  • the insulating film 25 covers the side of the element body 21 facing the main surface 101 of the conductive member 10, i.e., the passivation film 213 located on the z2 side of the element body 21 in the thickness direction z.
  • the insulating film 25 protects the surface of the element body 21 facing the main surface 101 of the conductive member 10.
  • a portion of each of the multiple conductive pads 24 is exposed from the insulating film 25.
  • the insulating film 25 is spaced apart from the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B.
  • the insulating film 25 has multiple openings 251 penetrating in the thickness direction z.
  • the first conductive columnar portions 22A, 22B are exposed from any of the multiple openings 251.
  • the tip surface 221A of the first conductive columnar portions 22A and 22B is located between the main surface 101 of the conductive member 10 and the insulating film 25 in the thickness direction z.
  • the insulating film 25 has electrical insulation properties.
  • the insulating film 25 is made of, for example, polyimide.
  • the bonding layer 30 contacts both the main surface 101 of the conductive member 10 and the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B.
  • the bonding layer 30 is conductive.
  • the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are electrically connected to the main surface 101 of the conductive member 10.
  • the bonding layer 30 is, for example, solder (a metal containing tin and silver).
  • solder a metal containing tin and silver
  • the second conductive columnar parts 23 are arranged on the element body 21.
  • the second conductive columnar parts 23 protrude from the side of the element body 21 facing the main surface 101 of the conductive member 10 toward the z2 side in the thickness direction z.
  • each of the second conductive columnar parts 23 does not overlap with the main surface 101 of the conductive member 10 in the thickness direction z.
  • the second conductive columnar parts 23 are arranged in three regions between the lead 11A and the leads 12, between the lead 11C and the lead 11A, and between the lead 11B and the lead 11C in the thickness direction z. In each of these regions, the second conductive columnar parts 23 are arranged at intervals in the first direction x.
  • the upper ends of the multiple second conductive columnar portions 23 are electrically connected to the semiconductor layer 212 of the element body 21 via the conductive pads 24. As shown in FIGS. 9, 12, and 14, the multiple second conductive columnar portions 23 are electrically connected to the switching circuit 212A or the control circuit 212B of the semiconductor layer 212.
  • each of the multiple second conductive columnar parts 23 is electrically connected to the semiconductor layer 212 of the element body 21 via one of the multiple conductive pads 24.
  • the second conductive columnar part 23 protrudes toward the z2 side in the thickness direction z from the portion of the conductive pad 24 exposed from the opening 213A of the passivation film 213.
  • the second conductive columnar part 23 is, for example, cylindrical.
  • the area of the second conductive columnar part 23 as viewed in the thickness direction z is approximately the same as the area of each of the multiple first conductive columnar parts 22A and the multiple first conductive columnar parts 22B as viewed in the thickness direction z.
  • the material of the second conductive columnar part 23 includes, for example, copper.
  • the material of the second conductive columnar part 23 is the same as the material of the first conductive columnar parts 22A and 22B.
  • the multiple second conductive columnar parts 23 are, for example, made of metal plating.
  • At least the tip 231 of the second conductive columnar portion 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. Therefore, each of the multiple second conductive columnar portions 23 is not electrically connected to the conductive member 10.
  • the tip 231 of the second conductive columnar portion 23 has a tip surface 231A and a side surface 231B.
  • the tip surface 231A of the second conductive columnar portion 23 is flat and parallel to the main surface 101 of the conductive member 10.
  • the side surface 231B is connected to the tip surface 231A and faces in a direction perpendicular to the thickness direction z.
  • the second conductive columnar portion 23 may be concave toward the element body 21, or may be convex toward the z2 side of the thickness direction z.
  • the multiple second conductive columnar portions 23 are formed, for example, by electrolytic plating.
  • the second conductive columnar portion 23 is exposed from one of a plurality of openings 251 provided in the insulating film 25.
  • the tip surface 231A of the second conductive columnar portion 23 is located between the main surface 101 of the conductive member 10 and the insulating film 25 in the thickness direction z.
  • the tip surface 231A of the second conductive columnar portion 23 is located at the same position as the tip surfaces 221A of the first conductive columnar portions 22A, 22B in the thickness direction z.
  • the sealing resin 40 has a resin main surface 41, a resin back surface 42, a pair of first resin side surfaces 431, and a pair of second resin side surfaces 432.
  • the constituent material of the sealing resin 40 is, for example, a black epoxy resin.
  • the resin main surface 41 faces the same side as the main surface 101 of the conductive member 10 in the thickness direction z.
  • the resin main surface 41 faces the z1 side in the thickness direction z.
  • the resin back surface 42 faces the opposite side to the resin main surface 41.
  • the resin back surface 42 faces the z2 side in the thickness direction z.
  • the back surfaces 102 of the multiple leads 11A to 11C, the back surfaces 102 of the multiple leads 12, and the back surfaces 102 of a pair of leads 13 are exposed from the resin back surface 42.
  • the pair of first resin side surfaces 431 are connected to both the resin main surface 41 and the resin back surface 42, and face the first direction x.
  • the pair of first resin side surfaces 431 are spaced apart from each other in the second direction y.
  • the end faces 112A of the multiple leads 11A to 11C and the end face 131 of the lead 13 are exposed from each of the pair of first resin side surfaces 431 so as to be flush with the first resin side surfaces 431.
  • the pair of second resin side surfaces 432 are connected to all of the resin main surface 41, the resin back surface 42, and the pair of first resin side surfaces 431, and face the second direction y.
  • the pair of second resin side surfaces 432 are spaced apart from each other in the first direction x.
  • the end faces 121 of the multiple leads 12 are exposed from the second resin side surface 432 located on the y1 side of the second direction y so as to be flush with the second resin side surface 432.
  • the multiple minor end faces 113A of the lead 11B are exposed from the second resin side surface 432 located on the y2 side of the second direction y so as to be flush with the second resin side surface 432.
  • the semiconductor device A10 includes a conductive member 10 having a main surface 101, a semiconductor element 20 disposed on the z2 side of the conductive member 10 in the thickness direction z and supported by the main surface 101, and a sealing resin 40 covering a part of the conductive member 10 and the semiconductor element 20.
  • the semiconductor element 20 has an element body 21, a plurality of first conductive columnar portions 22A, a plurality of first conductive columnar portions 22B, and a plurality of second conductive columnar portions 23.
  • the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B protrude from the element body 21 to the z2 side in the thickness direction z, and are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z.
  • Each of the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B is electrically connected to both the element body 21 and the main surface 101.
  • Each of the second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z.
  • the tip 231 of each of the second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the second conductive columnar parts 23 is not electrically connected to the conductive member 10.
  • the second conductive columnar parts 23 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A10.
  • the heat generated in the semiconductor element 20 is dissipated by being transmitted to the first conductive columnar parts 22A and 22B and the conductive member 10, and is also transmitted to the second conductive columnar parts 23. Therefore, the semiconductor device A10 can improve the heat dissipation of the heat generated in the semiconductor element 20.
  • the multiple second conductive columnar portions 23 protrude from the element body 21 toward the z2 side in the thickness direction z.
  • the multiple second conductive columnar portions 23 do not overlap with the main surface 101 of the conductive member 10 when viewed in the thickness direction z.
  • the constituent material of the second conductive columnar portions 23 is the same as the constituent material of the first conductive columnar portions 22A, 22B. With this configuration, the multiple second conductive columnar portions 23 can be formed collectively on the z2 side of the element body 21 in the thickness direction z together with the multiple first conductive columnar portions 22A, 22B.
  • Each of the multiple second conductive columnar portions 23 is in contact with one of the multiple conductive pads 24 and protrudes from the conductive pad 24 to the z2 side in the thickness direction z. With this configuration, heat generated in the semiconductor element 20 can be efficiently dissipated to the second conductive columnar portion 23 via the conductive pad 24. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A10.
  • FIGS. 15 to 18 show modified examples of the semiconductor device A10 according to the first embodiment.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.
  • Fig. 15 shows a semiconductor device A11 according to a first modification of the first embodiment.
  • Fig. 15 is a cross-sectional view of the semiconductor device A11, and is an enlarged cross-sectional view of the vicinity of the second conductive columnar portion 23, similar to Fig. 14.
  • the semiconductor device A11 differs from the above embodiment in the arrangement of the second conductive columnar portion 23 on the element body 21.
  • the semiconductor element 20 further includes a metal layer 26.
  • the metal layer 26 is laminated on the insulating film 25.
  • the constituent material of the metal layer 26 includes, for example, copper.
  • the metal layer 26 is, for example, made of metal plating.
  • the metal layer 26 is laminated across the surface of the conductive pad 24 facing the z2 side in the thickness direction z and the surface of the insulating film 25 facing the z2 side in the thickness direction z.
  • the metal layer 26 includes a first portion 261.
  • the first portion 261 is a portion that is laminated on the conductive pad 24 and is in contact with the conductive pad 24.
  • the second conductive columnar portion 23 is disposed on the metal layer 26 and protrudes from the metal layer 26 to the z2 side in the thickness direction z.
  • the second conductive columnar portion 23 is electrically connected to the conductive pad 24 via the first portion 261.
  • each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z.
  • the tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10.
  • the multiple second conductive columnar parts 23 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A11.
  • the semiconductor device A11 can improve the heat dissipation performance of heat generated in the semiconductor element 20.
  • Each of the multiple second conductive columnar portions 23 is electrically connected to the conductive pad 24 via the metal layer 26 (first portion 261) that contacts the conductive pad 24.
  • heat generated in the semiconductor element 20 can be efficiently dissipated to the second conductive columnar portion 23 via the conductive pad 24 and the metal layer 26. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A11.
  • the semiconductor device A11 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
  • Fig. 16 shows a semiconductor device A12 according to a second modification of the first embodiment.
  • Fig. 16 is a cross-sectional view of the semiconductor device A12, and is an enlarged cross-sectional view of the vicinity of the second conductive columnar portion 23, similar to Fig. 14.
  • the semiconductor device A12 differs from the above embodiment in the arrangement of the second conductive columnar portion 23 on the element body 21.
  • the semiconductor element 20 has a metal layer 26, similar to the semiconductor device A11.
  • the metal layer 26 is formed by laminating on the insulating film 25.
  • the constituent material of the metal layer 26 includes, for example, copper.
  • the metal layer 26 is formed, for example, by metal plating.
  • the metal layer 26 includes a second portion 262.
  • the second portion 262 is laminated on the surface of the insulating film 25 facing the z2 side in the thickness direction z, and is not in contact with any of the multiple conductive pads 24.
  • the second conductive columnar portion 23 is disposed on the second portion 262 and protrudes from the second portion 262 to the z2 side in the thickness direction z.
  • each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z.
  • the tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10.
  • the multiple second conductive columnar parts 23 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A12.
  • the semiconductor device A12 can improve the heat dissipation performance of heat generated in the semiconductor element 20.
  • Each of the multiple second conductive columnar portions 23 is disposed on the metal layer 26 (second portion 262).
  • the second portion 262 is not in contact with any of the multiple conductive pads 24.
  • This configuration increases the degree of freedom in arranging the multiple second conductive columnar portions 23.
  • the semiconductor device A12 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
  • Figures 17 and 18 show a semiconductor device A13 according to a third modified example of the first embodiment.
  • Figure 17 is a plan view of the semiconductor device A13, with the semiconductor element 20 and the sealing resin 40 seen through.
  • Figure 18 is a cross-sectional view taken along line XVIII-XVIII in Figure 17.
  • the semiconductor element 20 and the sealing resin 40 seen through are respectively indicated by imaginary lines (two-dot chain lines).
  • the semiconductor device A13 differs from the above embodiment in the shape of the multiple second conductive columnar portions 23 when viewed in the thickness direction z.
  • each of the multiple second conductive columnar portions 23 is elongated in the first direction x when viewed in the thickness direction z.
  • the area of the second conductive columnar portion 23 when viewed in the thickness direction z is larger than the area of each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B when viewed in the thickness direction z.
  • each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z.
  • the tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10.
  • the multiple second conductive columnar parts 23 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A13.
  • the heat generated in the semiconductor element 20 is dissipated by being transmitted to the multiple first conductive columnar parts 22A, 22B and the conductive member 10, and is also transmitted to the multiple second conductive columnar parts 23. Therefore, the semiconductor device A13 can improve the heat dissipation of heat generated in the semiconductor element 20.
  • the area of the second conductive columnar portion 23 as viewed in the thickness direction z is larger than the area of each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B as viewed in the thickness direction z.
  • the semiconductor device A13 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
  • Second embodiment 19 to 23 show a semiconductor device A20 according to a second embodiment of the present disclosure.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.
  • FIG. 19 is a plan view of the semiconductor device A20, seen through the sealing resin 40.
  • FIG. 20 is a plan view of the semiconductor device A20, seen through the semiconductor element 20 and the sealing resin 40.
  • FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20.
  • FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 20.
  • FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 20.
  • the see-through sealing resin 40 is shown by an imaginary line (two-dot chain line).
  • the see-through semiconductor element 20 and sealing resin 40 are each shown by an imaginary line (two-dot chain line).
  • the semiconductor element 20 has a plurality of second conductive columnar portions 27 instead of the plurality of second conductive columnar portions 23 of the above embodiment.
  • Each of the plurality of second conductive columnar portions 27 protrudes from the element body 21 toward the z1 side in the thickness direction z.
  • the plurality of second conductive columnar portions 27 are arranged on the top surface 211A (the surface facing the z1 side in the thickness direction z) of the semiconductor substrate 211 constituting the element body 21. As shown in Figures 20 to 22, each of the plurality of second conductive columnar portions 27 may overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z.
  • the arrangement of the plurality of second conductive columnar portions 27 is not particularly limited, and in the illustrated example, the plurality of second conductive columnar portions 27 are arranged at intervals in both the first direction x and the second direction y.
  • the tip of each of the multiple second conductive columnar sections 27 (the end on the z1 side in the thickness direction z) is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • the second conductive columnar portion 27 is, for example, a columnar portion having an elliptical cross section. As shown in FIG. 19 and FIG. 20, the area of the second conductive columnar portion 27 as viewed in the thickness direction z is larger than the area of each of the first conductive columnar portions 22A and the first conductive columnar portions 22B as viewed in the thickness direction z.
  • the material of the second conductive columnar portion 27 includes, for example, copper.
  • the second conductive columnar portions 27 are made of, for example, metal plating.
  • the second conductive columnar portions 27 are formed by, for example, electrolytic plating.
  • a conductive base layer is formed in a predetermined region of the top surface 211A (the surface facing the z1 side in the thickness direction z) of the semiconductor substrate 211, and the second conductive columnar portion 27 is formed on the base layer.
  • the dimension of the second conductive columnar portion 27 in the thickness direction z is larger than the dimension of the first conductive columnar portions 22A and 22B in the thickness direction z.
  • the semiconductor device A20 includes a conductive member 10 having a main surface 101, a semiconductor element 20 disposed on the z2 side of the conductive member 10 in the thickness direction z and supported by the main surface 101, and a sealing resin 40 covering a part of the conductive member 10 and the semiconductor element 20.
  • the semiconductor element 20 has an element body 21, a plurality of first conductive columnar portions 22A, a plurality of first conductive columnar portions 22B, and a plurality of second conductive columnar portions 27.
  • the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B protrude from the element body 21 to the z2 side in the thickness direction z, and are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z.
  • Each of the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B is electrically connected to both the element body 21 and the main surface 101.
  • Each of the second conductive columnar parts 27 is disposed on the element body 21 and protrudes in the thickness direction z. The tip of each of the second conductive columnar parts 27 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the second conductive columnar parts 27 is not electrically connected to the conductive member 10.
  • the second conductive columnar parts 27 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A20.
  • the heat generated in the semiconductor element 20 is dissipated by being transmitted to the first conductive columnar parts 22A and 22B and the conductive member 10, and is also transmitted to the second conductive columnar parts 27. Therefore, the semiconductor device A20 can improve the heat dissipation of the heat generated in the semiconductor element 20.
  • the second conductive columnar portions 27 protrude from the element body 21 toward the z1 side in the thickness direction z, which is the opposite side to the conductive member 10. This allows the second conductive columnar portions 27 to be arranged so as to overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z, thereby increasing the freedom of arrangement. Specifically, as in the illustrated example, the second conductive columnar portions 27 can be arranged so as to overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z.
  • the dimension of the second conductive columnar portion 27 in the thickness direction z can be made larger than the dimension of the first conductive columnar portions 22A and 22B in the thickness direction z. This is preferable in terms of improving the heat dissipation of the semiconductor device A20.
  • First modified example 24 to 28 show a semiconductor device A21 according to a first modified example of the second embodiment.
  • elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations will be omitted.
  • FIG. 24 is a plan view of the semiconductor device A21, seen through the sealing resin 40.
  • FIG. 25 is a plan view of the semiconductor device A21, seen through the semiconductor element 20 and the sealing resin 40.
  • FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25.
  • FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 25.
  • FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 25.
  • the see-through sealing resin 40 is shown by an imaginary line (two-dot chain line).
  • the see-through semiconductor element 20 and sealing resin 40 are each shown by an imaginary line (two-dot chain line).
  • the semiconductor element 20 has a plurality of second conductive columnar portions 23 in addition to a plurality of second conductive columnar portions 27.
  • the plurality of second conductive columnar portions 27 have the same configuration as the semiconductor device A20 of the above embodiment.
  • the plurality of second conductive columnar portions 23 have the same configuration as the semiconductor device A10 of the above first embodiment.
  • each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is disposed on the element body 21 and protrudes in the thickness direction z.
  • the tip of each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is in contact with the sealing resin 40 and is covered by the sealing resin 40.
  • each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is not conductive to the conductive member 10.
  • the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A21.
  • the semiconductor device A21 can improve the dissipation of heat generated in the semiconductor element 20.
  • the semiconductor element 20 has a plurality of second conductive columnar portions 23 and a plurality of second conductive columnar portions 27, so that heat generated in the semiconductor element 20 can be dissipated to both sides in the thickness direction z. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A21.
  • the semiconductor device A21 achieves the same effects as the semiconductor devices A10 and A20 within the same range of configuration as the semiconductor devices A10 and A20 of the above embodiment.
  • the semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment.
  • the specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
  • the conductive member 10 is described as being composed of multiple leads 11A-11C, multiple leads 12, and a pair of leads 13, but the present disclosure is not limited to this.
  • the conductive member 10 may be composed of, for example, metal plating of a desired shape.
  • a conductive member having a main surface facing one side in a thickness direction; a semiconductor element disposed on one side of the conductive member in the thickness direction and supported by the main surface; a sealing resin that covers a portion of the conductive member and the semiconductor element,
  • the semiconductor element includes an element body, a plurality of first conductive columnar portions, and at least one second conductive columnar portion; each of the plurality of first conductive columnar portions is interposed between the element body and the main surface in the thickness direction and is electrically connected to the element body and the main surface;
  • Each of the at least one second conductive columnar portion is disposed on the element body and protrudes in the thickness direction; a tip portion in the thickness direction of each of the at least one second conductive columnar portion is covered with the sealing resin.
  • Appendix 2 The semiconductor device of claim 1, wherein at least one of the at least one second conductive columnar portions protrudes from the element body to the other side in the thickness direction and does not overlap with the main surface when viewed in the thickness direction.
  • the element body includes a semiconductor substrate, a semiconductor layer stacked on the other side of the semiconductor substrate in the thickness direction, and a plurality of conductive pads arranged on the other side of the semiconductor layer in the thickness direction; 3.
  • each of the first conductive columnar portions is electrically connected to one of the conductive pads. Appendix 4. 4.
  • the semiconductor device wherein at least one of the plurality of first conductive columnar portions is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
  • Appendix 5. The semiconductor device according to claim 3, wherein at least one of the at least one second conductive columnar portion is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
  • Appendix 6. the semiconductor element has an insulating film covering the other side of the element body in the thickness direction, 6.
  • the semiconductor device according to claim 3, wherein at least a portion of each of the plurality of conductive pads is exposed from the insulating film.
  • Appendix 7. the semiconductor element has a metal layer formed on the insulating film; 7.
  • the metal layer includes a first portion in contact with at least one of the plurality of conductive pads; 8. The semiconductor device according to claim 7, wherein at least one of the at least one second conductive columnar portion is electrically connected to the conductive pad via the first portion.
  • Appendix 9. the metal layer includes a second portion that does not contact any of the plurality of conductive pads; The semiconductor device according to claim 7 or 8, wherein at least one of the at least one second conductive columnar portion is disposed on the second portion. Appendix 10. 10.
  • a constituent material of the at least one second conductive columnar portion is the same as a constituent material of the plurality of first conductive columnar portions.
  • Appendix 11 The conductive member has a back surface facing the opposite side in the thickness direction, the sealing resin has a resin main surface facing one side in the thickness direction and a resin back surface facing the other side in the thickness direction, 11. The semiconductor device according to claim 1, wherein the back surface is exposed from the resin back surface.
  • Appendix 12. 12 The semiconductor device according to claim 11, wherein a constituent material of the conductive member includes copper.
  • Appendix 13 13.
  • the semiconductor device according to claim 11, wherein the conductive member is a lead. Appendix 14. 2.
  • Appendix 15. A semiconductor device according to any one of claims 1 to 14, wherein the area of at least one of the at least one second conductive columnar portions as viewed in the thickness direction is larger than the area of each of the multiple first conductive columnar portions as viewed in the thickness direction. Appendix 16. 5. The semiconductor device according to claim 1, wherein at least one of the at least one second conductive columnar portion protrudes from the element body to one side in the thickness direction.

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Abstract

This semiconductor device comprises: a conductive member having a primary surface facing a thickness direction; a semiconductor element supported by the primary surface; and a sealing resin that covers the conductive member and the semiconductor element. The semiconductor element includes an element body, a plurality of first conductive columnar parts, and a second conductive columnar part. Each of the plurality of first conductive columnar parts is interposed between the element body and the primary surface in the thickness direction, and is electrically connected to the element body and the primary surface. The second conductive columnar part is disposed on the element body, and protrudes in the thickness direction. A distal end part in the thickness direction of the second conductive columnar part is covered with the sealing resin.

Description

半導体装置Semiconductor Device
　本開示は、半導体装置に関する。 This disclosure relates to a semiconductor device.
　半導体素子を備えた半導体装置は、様々な構成が提案されている。特許文献１には、従来の半導体装置の一例が開示されている。同文献に開示された半導体装置は、リード、半導体素子および封止樹脂を備えている。封止樹脂は、リードの一部、および半導体素子を覆っている。 Various configurations have been proposed for semiconductor devices equipped with semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, and a sealing resin. The sealing resin covers a portion of the leads and the semiconductor element.
　特許文献１に記載の半導体装置において、半導体素子は、リード上にフリップチップ接合により搭載されている。リードは、厚さ方向の一方側を向く主面を有する。半導体素子は、当該主面に対向する側に設けられた複数の電極を有し、複数の電極が、たとえばはんだなどからなる接合層を介してリードの主面に接合されている。上記リードは、複数の電極を介して半導体素子の内部回路に導通している。半導体素子で発生した熱は、複数の電極、およびリードを介して放熱される。しかしながら、半導体装置の大電流化等に伴い、半導体素子での発熱量が大きくなると、上記のように複数の電極、およびリードを介した放熱が不十分となることが懸念される。 In the semiconductor device described in Patent Document 1, the semiconductor element is mounted on the leads by flip-chip bonding. The leads have a main surface facing one side in the thickness direction. The semiconductor element has multiple electrodes provided on the side opposite the main surface, and the multiple electrodes are bonded to the main surface of the leads via a bonding layer made of, for example, solder. The leads are conductive to the internal circuit of the semiconductor element via the multiple electrodes. Heat generated by the semiconductor element is dissipated via the multiple electrodes and leads. However, as the amount of heat generated by the semiconductor element increases with increasing current in semiconductor devices, there is a concern that heat dissipation via the multiple electrodes and leads as described above will be insufficient.
特開２０２０－７７７２３号公報JP 2020-77723 A
　本開示は、従来より改良が施された半導体装置を提供することを一の課題とする。特に本開示は、上記した事情に鑑み、半導体素子において発生した熱の放熱性を向上するのに適した半導体装置を提供することを一の課題とする。 An object of the present disclosure is to provide a semiconductor device that is an improvement over conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that is suitable for improving the dissipation of heat generated in a semiconductor element.
　本開示の第１の側面によって提供される半導体装置は、厚さ方向の一方側を向く主面を有する導電部材と、前記導電部材に対して前記厚さ方向の一方側に配置され且つ前記主面に支持された半導体素子と、前記導電部材の一部および前記半導体素子を覆う封止樹脂とを備える。前記半導体素子は、素子本体と、複数の第１導電性柱状部と、少なくとも１つの第２導電性柱状部とを含む。前記複数の第１導電性柱状部の各々は、前記厚さ方向において前記素子本体と前記主面との間に介在し且つ前記素子本体および前記主面に電気的に接続されている。前記少なくとも１つの第２導電性柱状部の各々は、前記素子本体の上に配置され且つ前記厚さ方向に突出している。前記少なくとも１つの第２導電性柱状部の各々の前記厚さ方向における先端部は、前記封止樹脂に覆われている。 The semiconductor device provided by the first aspect of the present disclosure includes a conductive member having a main surface facing one side in the thickness direction, a semiconductor element disposed on one side of the conductive member in the thickness direction and supported by the main surface, and a sealing resin covering a part of the conductive member and the semiconductor element. The semiconductor element includes an element body, a plurality of first conductive columnar parts, and at least one second conductive columnar part. Each of the plurality of first conductive columnar parts is interposed between the element body and the main surface in the thickness direction and is electrically connected to the element body and the main surface. Each of the at least one second conductive columnar part is disposed on the element body and protrudes in the thickness direction. The tip end of each of the at least one second conductive columnar part in the thickness direction is covered with the sealing resin.
　上記構成によれば、半導体装置において、半導体素子で発生した熱の放熱性を向上することができる。 The above configuration improves the dissipation of heat generated by the semiconductor element in the semiconductor device.
　本開示のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。 Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.
図１は、本開示の第１実施形態に係る半導体装置を示す斜視図である。FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. 図２は、本開示の第１実施形態に係る半導体装置を示す平面図（封止樹脂を透過）である。FIG. 2 is a plan view (through a sealing resin) showing the semiconductor device according to the first embodiment of the present disclosure. 図３は、本開示の第１実施形態に係る半導体装置を示す平面図（半導体素子および封止樹脂を透過）である。FIG. 3 is a plan view (with a semiconductor element and a sealing resin transparent) showing the semiconductor device according to the first embodiment of the present disclosure. 図４は、本開示の第１実施形態に係る半導体装置を示す底面図である。FIG. 4 is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure. 図５は、本開示の第１実施形態に係る半導体装置を示す正面図である。FIG. 5 is a front view showing the semiconductor device according to the first embodiment of the present disclosure. 図６は、本開示の第１実施形態に係る半導体装置を示す背面図である。FIG. 6 is a rear view showing the semiconductor device according to the first embodiment of the present disclosure. 図７は、本開示の第１実施形態に係る半導体装置を示す右側面図である。FIG. 7 is a right side view showing the semiconductor device according to the first embodiment of the present disclosure. 図８は、本開示の第１実施形態に係る半導体装置を示す左側面図である。FIG. 8 is a left side view showing the semiconductor device according to the first embodiment of the present disclosure. 図９は、図３のＩＸ－ＩＸ線に沿う断面図である。FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 図１０は、図３のＸ－Ｘ線に沿う断面図である。FIG. 10 is a cross-sectional view taken along line XX in FIG. 図１１は、図３のＸＩ－ＸＩ線に沿う断面図である。FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 図１２は、図３のＸＩＩ－ＸＩＩ線に沿う断面図である。FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 図１３は、図１２の部分拡大図（第１導電性柱状部付近）である。FIG. 13 is a partial enlarged view (near the first conductive columnar portion) of FIG. 図１４は、図１２の部分拡大図（第２導電性柱状部付近）である。FIG. 14 is a partial enlarged view (near the second conductive columnar portion) of FIG. 図１５は、第１実施形態の第１変形例に係る半導体装置を示す、図１４と同様の断面図である。FIG. 15 is a cross-sectional view similar to FIG. 14, showing a semiconductor device according to a first modification of the first embodiment. 図１６は、第１実施形態の第２変形例に係る半導体装置を示す、図１４と同様の断面図である。FIG. 16 is a cross-sectional view similar to FIG. 14, showing a semiconductor device according to a second modification of the first embodiment. 図１７は、第１実施形態の第３変形例に係る半導体装置を示す平面図（半導体素子および封止樹脂を透過）である。FIG. 17 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a third modification of the first embodiment. 図１８は、図１７のＸＶＩＩＩ－ＸＶＩＩＩ線に沿う断面図である。FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 図１９は、本開示の第２実施形態に係る半導体装置を示す平面図（封止樹脂を透過）である。FIG. 19 is a plan view (through a sealing resin) showing a semiconductor device according to a second embodiment of the present disclosure. 図２０は、本開示の第２実施形態に係る半導体装置を示す平面図（半導体素子および封止樹脂を透過）である。FIG. 20 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a second embodiment of the present disclosure. 図２１は、図２０のＸＸＩ－ＸＸＩ線に沿う断面図である。FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 図２２は、図２０のＸＸＩＩ－ＸＸＩＩ線に沿う断面図である。FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 図２３は、図２０のＸＸＩＩＩ－ＸＸＩＩＩ線に沿う断面図である。FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 図２４は、第２実施形態の第１変形例に係る半導体装置を示す平面図（封止樹脂を透過）である。FIG. 24 is a plan view (through a sealing resin) showing a semiconductor device according to a first modification of the second embodiment. 図２５は、第２実施形態の第１変形例に係る半導体装置を示す平面図（半導体素子および封止樹脂を透過）である。FIG. 25 is a plan view (with a semiconductor element and a sealing resin transparent) showing a semiconductor device according to a first modification of the second embodiment. 図２６は、図２５のＸＸＶＩ－ＸＸＶＩ線に沿う断面図である。FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 図２７は、図２５のＸＸＶＩＩ－ＸＸＶＩＩ線に沿う断面図である。FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 図２８は、図２５のＸＸＶＩＩＩ－ＸＸＶＩＩＩ線に沿う断面図である。FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG.
　以下、本開示の好ましい実施の形態につき、図面を参照して具体的に説明する。 Below, a preferred embodiment of this disclosure will be described in detail with reference to the drawings.
　本開示における「第１」、「第２」、「第３」等の用語は、単にラベルとして用いたものであり、必ずしもそれらの対象物に順列を付することを意図していない。 The terms "first," "second," "third," etc., used in this disclosure are used merely as labels and are not necessarily intended to assign any order to their objects.
　本開示において、「ある物Ａがある物Ｂに形成されている」および「ある物Ａがある物Ｂ上に形成されている」とは、特段の断りのない限り、「ある物Ａがある物Ｂに直接形成されていること」、および、「ある物Ａとある物Ｂとの間に他の物を介在させつつ、ある物Ａがある物Ｂに形成されていること」を含む。同様に、「ある物Ａがある物Ｂに配置されている」および「ある物Ａがある物Ｂ上に配置されている」とは、特段の断りのない限り、「ある物Ａがある物Ｂに直接配置されていること」、および、「ある物Ａとある物Ｂとの間に他の物を介在させつつ、ある物Ａがある物Ｂに配置されていること」を含む。同様に、「ある物Ａがある物Ｂ上に位置している」とは、特段の断りのない限り、「ある物Ａがある物Ｂに接して、ある物Ａがある物Ｂ上に位置していること」、および、「ある物Ａとある物Ｂとの間に他の物が介在しつつ、ある物Ａがある物Ｂ上に位置していること」を含む。「ある物Ａがある物Ｂにある方向に見て重なる」とは、特段の断りのない限り、「ある物Ａがある物Ｂのすべてに重なること」、および、「ある物Ａがある物Ｂの一部に重なること」を含む。本開示において「ある面Ａが方向Ｂ（の一方側または他方側）を向く」とは、面Ａの方向Ｂに対する角度が９０°である場合に限定されず、面Ａが方向Ｂに対して傾いている場合を含む。 In this disclosure, "an object A is formed on an object B" and "an object A is formed on an object B" include "an object A is formed directly on an object B" and "an object A is formed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is disposed on an object B" and "an object A is disposed on an object B" include "an object A is disposed directly on an object B" and "an object A is disposed on an object B with another object interposed between the object A and the object B" unless otherwise specified. Similarly, "an object A is located on an object B" includes "an object A is located on an object B in contact with an object B" and "an object A is located on an object B with another object interposed between the object A and the object B" unless otherwise specified. Unless otherwise specified, "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." In this disclosure, "a surface A faces in direction B (one side or the other side of direction B)" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.
　第１実施形態：
　図１～図１４に基づき、本開示の第１実施形態に係る半導体装置Ａ１０について説明する。半導体装置Ａ１０は、導電部材１０、半導体素子２０、接合層３０および封止樹脂４０を備えている。図１に示すように、半導体装置Ａ１０のパッケージ形式は、ＱＦＮ（Quad For Non-Lead Package）である。半導体装置Ａ１０のパッケージ形式は、ＱＦＮに限定されない。半導体素子２０は、フリップチップ型のＬＳＩである。半導体素子２０には、その内部にスイッチング回路２１２Ａおよび制御回路２１２Ｂ（それぞれ詳細は後述）が構成されている。半導体装置Ａ１０においては、スイッチング回路２１２Ａにより直流電力（電圧）が交流電力（電圧）に変換される。半導体装置Ａ１０は、たとえばＤＣ／ＤＣコンバータの回路を構成する一要素に用いられる。 First embodiment:
A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 14. The semiconductor device A10 includes a conductive member 10, a semiconductor element 20, a bonding layer 30, and a sealing resin 40. As shown in FIG. 1, the package format of the semiconductor device A10 is a QFN (Quad For Non-Lead Package). The package format of the semiconductor device A10 is not limited to QFN. The semiconductor element 20 is a flip-chip type LSI. The semiconductor element 20 includes a switching circuit 212A and a control circuit 212B (each of which will be described in detail later). In the semiconductor device A10, the switching circuit 212A converts DC power (voltage) into AC power (voltage). The semiconductor device A10 is used as one element constituting a circuit of a DC/DC converter, for example.
　図１は、半導体装置Ａ１０の斜視図である。図２は、半導体装置Ａ１０の平面図であり、封止樹脂４０を透過している。図３は、半導体装置Ａ１０の平面図であり、半導体素子２０および封止樹脂４０を透過している。図４は、半導体装置Ａ１０の底面図である。図５は、半導体装置Ａ１０の正面図である。図６は、半導体装置Ａ１０の背面図である。図７は、半導体装置Ａ１０の右側面図である。図８は、半導体装置Ａ１０の左側面図である。図９は、図３のＩＸ－ＩＸ線に沿う断面図である。図１０は、図３のＸ－Ｘ線に沿う断面図である。図１１は、図３のＸＩ－ＸＩ線に沿う断面図である。図１２は、図３のＸＩＩ－ＸＩＩ線に沿う断面図である。図１３、図１４は、図１２の部分拡大図である。図２においては、透過した封止樹脂４０を想像線（二点鎖線）で示している。図３においては、透過した半導体素子２０および封止樹脂４０をそれぞれ想像線（二点鎖線）で示している。 FIG. 1 is a perspective view of the semiconductor device A10. FIG. 2 is a plan view of the semiconductor device A10, seen through the sealing resin 40. FIG. 3 is a plan view of the semiconductor device A10, seen through the semiconductor element 20 and the sealing resin 40. FIG. 4 is a bottom view of the semiconductor device A10. FIG. 5 is a front view of the semiconductor device A10. FIG. 6 is a rear view of the semiconductor device A10. FIG. 7 is a right side view of the semiconductor device A10. FIG. 8 is a left side view of the semiconductor device A10. FIG. 9 is a cross-sectional view along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view along line X-X in FIG. 3. FIG. 11 is a cross-sectional view along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view along line XII-XII in FIG. 3. FIGS. 13 and 14 are partial enlarged views of FIG. 12. In FIG. 2, the sealing resin 40 seen through is shown by an imaginary line (two-dot chain line). In FIG. 3, the semiconductor element 20 and the sealing resin 40 are shown by imaginary lines (double-dashed lines).
　半導体装置Ａ１０の説明においては、互いに直交する３つの方向を適宜参照する。一例として、導電部材１０の厚さ方向を、「厚さ方向ｚ」と呼ぶ。厚さ方向ｚに対して直交する１つの方向を「第１方向ｘ」と呼ぶ。厚さ方向ｚおよび第１方向ｘの双方に対して直交する方向を「第２方向ｙ」と呼ぶ。図１および図２に示すように、半導体装置Ａ１０は、厚さ方向ｚに見て（平面視で）正方形状である。 In describing the semiconductor device A10, three mutually orthogonal directions will be referred to as appropriate. As an example, the thickness direction of the conductive member 10 will be referred to as the "thickness direction z." One direction orthogonal to the thickness direction z will be referred to as the "first direction x." A direction orthogonal to both the thickness direction z and the first direction x will be referred to as the "second direction y." As shown in Figures 1 and 2, the semiconductor device A10 is square-shaped when viewed in the thickness direction z (in a plan view).
　導電部材１０は、図２に示すように、半導体素子２０を支持するとともに、半導体装置Ａ１０を配線基板に実装するための端子をなしている。図９～図１２に示すように、導電部材１０は、その一部が封止樹脂４０に覆われている。導電部材１０は、厚さ方向ｚにおいて互いに反対側を向く主面１０１および裏面１０２を有する。主面１０１は、厚さ方向ｚのｚ１側を向き、且つ半導体素子２０に対向している。半導体素子２０は、主面１０１に支持されている。主面１０１は、封止樹脂４０に覆われている。裏面１０２は、厚さ方向ｚの他方側を向く。導電部材１０は、単一のリードフレームから構成される。当該リードフレームの構成材料は、たとえば、銅（Ｃｕ）または銅合金である。導電部材１０は、複数のリード１１Ａ，１１Ｂ,１１Ｃ、複数のリード１２および一対のリード１３を含む。 As shown in FIG. 2, the conductive member 10 supports the semiconductor element 20 and serves as a terminal for mounting the semiconductor device A10 on a wiring board. As shown in FIGS. 9 to 12, a part of the conductive member 10 is covered with the sealing resin 40. The conductive member 10 has a main surface 101 and a back surface 102 that face opposite each other in the thickness direction z. The main surface 101 faces the z1 side in the thickness direction z and faces the semiconductor element 20. The semiconductor element 20 is supported by the main surface 101. The main surface 101 is covered with the sealing resin 40. The back surface 102 faces the other side in the thickness direction z. The conductive member 10 is composed of a single lead frame. The constituent material of the lead frame is, for example, copper (Cu) or a copper alloy. The conductive member 10 includes a plurality of leads 11A, 11B, 11C, a plurality of leads 12, and a pair of leads 13.
　複数のリード１１Ａ～１１Ｃは、図３および図４に示すように、厚さ方向ｚに見て第２方向ｙに延びる帯状である。複数のリード１１Ａ～１１Ｃは、第２方向ｙに沿って配列されている。複数のリード１１Ａ～１１Ｃは、第２方向ｙのｙ１側から第２方向ｙのｙ２側に向けて、リード１１Ａ、リード１１Ｃ、リード１１Ｃの順に配列されている。リード１１Ａおよびリード１１Ｂは、半導体装置Ａ１０において電力変換対象となる直流電力（電圧）が入力される、入力端子である。リード１１Ａは、正極（Ｐ端子）である。リード１１Ｂは、負極（Ｎ端子）である。リード１１Ｃは、半導体素子２０に構成されたスイッチング回路２１２Ａにより電力変換された交流電力（電圧）が出力される、出力端子である。 As shown in Figures 3 and 4, the multiple leads 11A to 11C are strip-shaped extending in the second direction y when viewed in the thickness direction z. The multiple leads 11A to 11C are arranged along the second direction y. The multiple leads 11A to 11C are arranged in the order of lead 11A, lead 11C, lead 11C from the y1 side of the second direction y to the y2 side of the second direction y. The leads 11A and 11B are input terminals to which the DC power (voltage) to be converted in the semiconductor device A10 is input. The lead 11A is the positive electrode (P terminal). The lead 11B is the negative electrode (N terminal). The lead 11C is an output terminal to which the AC power (voltage) converted by the switching circuit 212A configured in the semiconductor element 20 is output.
　図３に示すように、リード１１Ａは、第２方向ｙにおいて複数のリード１２とリード１１Ｃとの間に位置する。リード１１Ｃは、第２方向ｙにおいてリード１１Ａとリード１１Ｂとの間に位置する。リード１１Ａ～１１Ｃの各々は、主部１１１および一対の側部１１２を含む。図３および図４に示すように、主部１１１は、第１方向ｘに延びている。複数のリード１１Ａ～１１Ｃにおいて、半導体素子２０は、主部１１１の主面１０１に支持されている。一対の側部１１２は、主部１１１の第１方向ｘの両端につながっている。図３、図４、図１０および図１１に示すように、一対の側部１１２の各々は、端面１１２Ａを有する。端面１１２Ａは、リード１１Ａ～１１Ｃの主面１０１および裏面１０２の双方につながり、且つ第１方向ｘを向く。端面１１２Ａは、封止樹脂４０から露出している。 As shown in FIG. 3, lead 11A is located between the multiple leads 12 and lead 11C in the second direction y. Lead 11C is located between lead 11A and lead 11B in the second direction y. Each of leads 11A to 11C includes a main portion 111 and a pair of side portions 112. As shown in FIGS. 3 and 4, main portion 111 extends in the first direction x. In the multiple leads 11A to 11C, the semiconductor element 20 is supported on the main surface 101 of main portion 111. The pair of side portions 112 are connected to both ends of main portion 111 in the first direction x. As shown in FIGS. 3, 4, 10 and 11, each of the pair of side portions 112 has an end surface 112A. The end surface 112A is connected to both main surface 101 and back surface 102 of leads 11A to 11C and faces the first direction x. The end surface 112A is exposed from the sealing resin 40.
　図３に示すように、リード１１Ｂは、リード１１Ｃよりも第２方向ｙのｙ２側に位置する。このため、リード１１Ｂは、複数のリード１１Ａ～１１Ｃのうち第２方向ｙのｙ２側に位置する。リード１１Ｂは、主部１１１、一対の側部１１２および複数の突出部１１３を含む。複数の突出部１１３は、主部１１１の第２方向ｙのｙ２側から突出している。隣り合う２つの突出部１１３の間には、封止樹脂４０が充填されている。図９に示すように、複数の突出部１１３の各々は、副端面１１３Ａを有する。副端面１１３Ａは、リード１１Ｂの主面１０１および裏面１０２の双方につながり、且つ第２方向ｙのｙ２側を向く。副端面１１３Ａは、封止樹脂４０から露出している。図７に示すように、複数の副端面１１３Ａは、第１方向ｘに沿って所定の間隔で配列されている。 3, lead 11B is located on the y2 side of lead 11C in the second direction y. Therefore, lead 11B is located on the y2 side of the multiple leads 11A to 11C in the second direction y. Lead 11B includes a main portion 111, a pair of side portions 112, and multiple protrusions 113. The multiple protrusions 113 protrude from the y2 side of the main portion 111 in the second direction y. Sealing resin 40 is filled between two adjacent protrusions 113. As shown in FIG. 9, each of the multiple protrusions 113 has a minor end surface 113A. The minor end surface 113A is connected to both the main surface 101 and the back surface 102 of lead 11B and faces the y2 side in the second direction y. The minor end surface 113A is exposed from the sealing resin 40. As shown in FIG. 7, the multiple minor end surfaces 113A are arranged at a predetermined interval along the first direction x.
　図３に示すように、リード１１Ｂの一対の側部１１２の各々には、切込部１１２Ｂが形成されている。切込部１１２Ｂは、リード１１Ｂの主面１０１から裏面１０２に至り、且つ端面１１２Ａから第１方向ｘに凹んでいる。これにより、端面１１２Ａは、第２方向ｙにおいて互いに離隔した２つの領域に分断されている。切込部１１２Ｂには、封止樹脂４０が充填されている。 As shown in FIG. 3, a notch 112B is formed in each of a pair of side portions 112 of lead 11B. The notch 112B extends from the main surface 101 to the back surface 102 of lead 11B, and is recessed in the first direction x from the end surface 112A. This divides the end surface 112A into two regions spaced apart from each other in the second direction y. The notch 112B is filled with sealing resin 40.
　図３および図４に示すように、複数のリード１１Ａ～１１Ｃの各々において、主面１０１の面積は、裏面１０２の面積よりも大である。半導体装置Ａ１０が示す例においては、リード１１Ａおよびリード１１Ｃの各々の裏面１０２の面積は、ともに等しい。リード１１Ｂの裏面１０２の面積は、リード１１Ａおよびリード１１Ｃの各々の裏面１０２の面積よりも大である。 As shown in Figures 3 and 4, the area of the main surface 101 of each of the multiple leads 11A to 11C is larger than the area of the back surface 102. In the example shown by semiconductor device A10, the areas of the back surfaces 102 of each of leads 11A and 11C are equal. The area of the back surface 102 of lead 11B is larger than the area of the back surfaces 102 of each of leads 11A and 11C.
　リード１１Ａ～１１Ｃの各々において、半導体素子２０が支持される主部１１１の主面１０１には、たとえば銀（Ａｇ）めっきを施してもよい。さらに、リード１１Ａ～１１Ｃの各々において、封止樹脂４０から露出する裏面１０２、一対の端面１１２Ａおよび複数の副端面１１３Ａには、たとえば錫（Ｓｎ）めっきを施してもよい。錫めっきに替えて、たとえばニッケル（Ｎｉ）、パラジウム（Ｐｄ）、金（Ａｕ）の順に積層された複数の金属めっきを採用してもよい。 In each of the leads 11A-11C, the main surface 101 of the main portion 111 on which the semiconductor element 20 is supported may be plated with, for example, silver (Ag). Furthermore, in each of the leads 11A-11C, the back surface 102 exposed from the sealing resin 40, the pair of end faces 112A, and the multiple minor end faces 113A may be plated with, for example, tin (Sn). Instead of tin plating, multiple metal platings may be used, for example, layered in the order of nickel (Ni), palladium (Pd), and gold (Au).
　複数のリード１２は、図３に示すように、複数のリード１１Ａ～１１Ｃよりも第２方向ｙのｙ１側に位置する。複数のリード１２のいずれか一つは、半導体素子２０に構成された制御回路２１２Ｂの接地端子である。その他の複数のリード１２の各々には、制御回路２１２Ｂを駆動させるための電力（電圧）、または制御回路２１２Ｂに伝達するための電気信号が入力される。図３、図４および図９に示すように、複数のリード１２の各々は、端面１２１を有する。端面１２１は、リード１２の主面１０１および裏面１０２の双方につながり、且つ第２方向ｙのｙ１側を向く。端面１２１は、封止樹脂４０から露出している。図８に示すように、複数の端面１２１は、第１方向ｘに沿って所定の間隔で配列されている。 As shown in FIG. 3, the multiple leads 12 are located on the y1 side of the multiple leads 11A to 11C in the second direction y. One of the multiple leads 12 is a ground terminal of the control circuit 212B configured in the semiconductor element 20. To each of the other multiple leads 12, power (voltage) for driving the control circuit 212B or an electrical signal to be transmitted to the control circuit 212B is input. As shown in FIGS. 3, 4, and 9, each of the multiple leads 12 has an end face 121. The end face 121 is connected to both the main surface 101 and the back surface 102 of the lead 12 and faces the y1 side in the second direction y. The end face 121 is exposed from the sealing resin 40. As shown in FIG. 8, the multiple end faces 121 are arranged at a predetermined interval along the first direction x.
　図３および図４に示すように、複数のリード１２の各々において、主面１０１の面積は、裏面１０２の面積よりも大である。複数のリード１２の裏面１０２の面積は、いずれも等しい。半導体素子２０が支持される複数のリード１２の主面１０１には、たとえば銀めっきを施してもよい。さらに、封止樹脂４０から露出する複数のリード１２の裏面１０２および端面１２１には、たとえば錫めっきを施してもよい。錫めっきに替えて、たとえばニッケル、パラジウム、金の順に積層された複数の金属めっきを採用してもよい。 As shown in Figures 3 and 4, the area of the main surface 101 of each of the multiple leads 12 is larger than the area of the back surface 102. The areas of the back surfaces 102 of the multiple leads 12 are all equal. The main surfaces 101 of the multiple leads 12 on which the semiconductor element 20 is supported may be plated with silver, for example. Furthermore, the back surfaces 102 and end faces 121 of the multiple leads 12 exposed from the sealing resin 40 may be plated with tin, for example. Instead of tin plating, multiple metal platings may be used, for example, layered in this order of nickel, palladium, and gold.
　一対のリード１３は、図３に示すように、第２方向ｙにおいて、リード１１Ａと複数のリード１２との間に位置する。一対のリード１３は、第１方向ｘにおいて互いに離隔している。一対のリード１３の各々には、半導体素子２０に構成された制御回路２１２Ｂに伝達するための電気信号などが入力される。図３、図４および図１２に示すように、一対のリード１３の各々は、端面１３１を有する。端面１３１は、主面１０１および裏面１０２の双方につながり、且つ第１方向ｘを向く。端面１３１は、封止樹脂４０から露出している。端面１３１は、複数のリード１１Ａ～１１Ｃの端面１１２Ａとともに、第２方向ｙに沿って配列されている。 As shown in FIG. 3, the pair of leads 13 are located between the lead 11A and the multiple leads 12 in the second direction y. The pair of leads 13 are spaced apart from each other in the first direction x. An electrical signal or the like is input to each of the pair of leads 13 to be transmitted to the control circuit 212B configured in the semiconductor element 20. As shown in FIGS. 3, 4, and 12, each of the pair of leads 13 has an end face 131. The end face 131 is connected to both the main surface 101 and the back surface 102, and faces the first direction x. The end face 131 is exposed from the sealing resin 40. The end face 131 is arranged along the second direction y together with the end faces 112A of the multiple leads 11A to 11C.
　図３および図４に示すように、一対のリード１３の各々において、主面１０１の面積は、裏面１０２の面積よりも大である。半導体素子２０が支持される一対のリード１３の主面１０１には、たとえば銀めっきを施してもよい。さらに、封止樹脂４０から露出する一対のリード１３の裏面１０２および端面１３１には、たとえば錫めっきを施してもよい。錫めっきに替えて、たとえばニッケル、パラジウム、金の順に積層された複数の金属めっきを採用してもよい。 As shown in Figures 3 and 4, the area of the main surface 101 of each of the pair of leads 13 is larger than the area of the back surface 102. The main surface 101 of the pair of leads 13 on which the semiconductor element 20 is supported may be plated with silver, for example. Furthermore, the back surface 102 and end surface 131 of the pair of leads 13 exposed from the sealing resin 40 may be plated with tin, for example. Instead of tin plating, multiple metal platings may be used, for example, layered in this order of nickel, palladium, and gold.
　半導体素子２０は、図９～図１２に示すように、フリップチップ接合により導電部材１０（複数のリード１１Ａ～１１Ｃ、複数のリード１２および一対のリード１３）に電気的に接続され、且つこれらに支持されている。半導体素子２０は、封止樹脂４０に覆われている。図９～図１４に示すように、半導体素子２０は、素子本体２１、複数の第１導電性柱状部２２Ａ、複数の第１導電性柱状部２２Ｂ、複数の第２導電性柱状部２３、および絶縁膜２５を有する。 As shown in Figures 9 to 12, the semiconductor element 20 is electrically connected to and supported by the conductive member 10 (plurality of leads 11A to 11C, multiple leads 12, and a pair of leads 13) by flip-chip bonding. The semiconductor element 20 is covered with a sealing resin 40. As shown in Figures 9 to 14, the semiconductor element 20 has an element body 21, multiple first conductive columnar portions 22A, multiple first conductive columnar portions 22B, multiple second conductive columnar portions 23, and an insulating film 25.
　素子本体２１は、半導体素子２０の主要部をなす。図１３および図１４に示すように、素子本体２１は、半導体基板２１１、半導体層２１２およびパッシベーション膜２１３を有する。 The element body 21 forms the main part of the semiconductor element 20. As shown in Figures 13 and 14, the element body 21 has a semiconductor substrate 211, a semiconductor layer 212, and a passivation film 213.
　図１３および図１４に示すように、半導体基板２１１は、その下方において半導体層２１２、パッシベーション膜２１３、複数の第１導電性柱状部２２Ａ、複数の第１導電性柱状部２２Ｂ、複数の第２導電性柱状部２３、複数の導電パッド２４、および絶縁膜２５を支持している。半導体基板２１１の構成材料は、たとえば、Ｓｉ（シリコン）または炭化ケイ素（ＳｉＣ）である。 As shown in Figures 13 and 14, the semiconductor substrate 211 supports below it a semiconductor layer 212, a passivation film 213, a plurality of first conductive columnar sections 22A, a plurality of first conductive columnar sections 22B, a plurality of second conductive columnar sections 23, a plurality of conductive pads 24, and an insulating film 25. The constituent material of the semiconductor substrate 211 is, for example, Si (silicon) or silicon carbide (SiC).
　図９～図１２に示すように、半導体層２１２は、半導体基板２１１の導電部材１０の主面１０１に対向する側に積層されている。半導体層２１２は、ドープされる元素量の相違に基づく複数種類のｐ型半導体およびｎ型半導体を含む。半導体層２１２には、スイッチング回路２１２Ａと、スイッチング回路２１２Ａに導通する制御回路２１２Ｂとが構成されている。スイッチング回路２１２Ａは、ＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）やＩＧＢＴ（Insulated Gate Bipolar Transistor）などである。半導体装置Ａ１０が示す例においては、スイッチング回路２１２Ａは、高電圧領域（上アーム回路）と低電圧領域（下アーム回路）との２つの領域に区分されている。各々の領域は、１つのｎチャンネル型のＭＯＳＦＥＴにより構成されている。制御回路２１２Ｂは、スイッチング回路２１２Ａを駆動させるためのゲートドライバや、スイッチング回路２１２Ａの高電圧領域に対応するブートストラップ回路などが構成されるとともに、スイッチング回路２１２Ａを正常に駆動させるための制御を行う。半導体層２１２には、配線層（図示略）が構成されている。当該配線層により、スイッチング回路２１２Ａと制御回路２１２Ｂとは、相互に導通している。 9 to 12, the semiconductor layer 212 is laminated on the side of the semiconductor substrate 211 facing the main surface 101 of the conductive member 10. The semiconductor layer 212 includes multiple types of p-type and n-type semiconductors based on differences in the amount of elements to be doped. The semiconductor layer 212 includes a switching circuit 212A and a control circuit 212B that is conductive to the switching circuit 212A. The switching circuit 212A is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor), for example. In the example shown by the semiconductor device A10, the switching circuit 212A is divided into two regions, a high-voltage region (upper arm circuit) and a low-voltage region (lower arm circuit). Each region is composed of one n-channel MOSFET. The control circuit 212B includes a gate driver for driving the switching circuit 212A, a bootstrap circuit corresponding to the high voltage region of the switching circuit 212A, and the like, and performs control for driving the switching circuit 212A normally. A wiring layer (not shown) is formed in the semiconductor layer 212. The switching circuit 212A and the control circuit 212B are mutually conductive through the wiring layer.
　図１３および図１４に示すように、パッシベーション膜２１３は、半導体層２１２の下面を覆っている。パッシベーション膜２１３は、電気絶縁性を有する。パッシベーション膜２１３は、たとえば、半導体層２１２の下面に接する酸化ケイ素膜（ＳｉＯ2）と、当該酸化ケイ素膜に積層された窒化ケイ素膜（Ｓｉ3Ｎ4）とにより構成される。パッシベーション膜２１３には、厚さ方向ｚに貫通する複数の開口２１３Ａが設けられている。 13 and 14, the passivation film 213 covers the lower surface of the semiconductor layer 212. The passivation film 213 has electrical insulation properties. The passivation film 213 is composed of, for example, a silicon oxide film (SiO 2 ) in contact with the lower surface of the semiconductor layer 212, and a silicon nitride film (Si 3 N 4 ) laminated on the silicon oxide film. The passivation film 213 is provided with a plurality of openings 213A penetrating in the thickness direction z.
　図９～図１２に示すように、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、厚さ方向ｚにおいて、素子本体２１と導電部材１０の主面１０１との間に介在している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、素子本体２１の導電部材１０の主面１０１に対向する側から、導電部材１０の主面１０１に向けて突出している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの上端は、素子本体２１の半導体層２１２に導通している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、導電部材１０の主面１０１に電気的に接続されている。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、半導体素子２０において、いわゆる電極として機能する。複数の第１導電性柱状部２２Ａは、半導体層２１２のスイッチング回路２１２Ａに導通している。あわせて、複数の第１導電性柱状部２２Ａは、複数のリード１１Ａ～１１Ｃの主面１０１に電気的に接続されている。これにより、複数のリード１１Ａ～１１Ｃは、スイッチング回路２１２Ａに導通している。複数の第１導電性柱状部２２Ｂは、半導体層２１２の制御回路２１２Ｂに導通している。あわせて、複数の第１導電性柱状部２２Ｂの大半は、複数のリード１２の主面１０１に電気的に接続されている。残りの第１導電性柱状部２２Ｂは、一対のリード１３の主面１０１に電気的に接続されている。これにより、複数のリード１２および一対のリード１３は、制御回路２１２Ｂに導通している。 9 to 12, the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z. The multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B protrude from the side of the element body 21 facing the main surface 101 of the conductive member 10 toward the main surface 101 of the conductive member 10. The upper ends of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are conductive to the semiconductor layer 212 of the element body 21. The multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are electrically connected to the main surface 101 of the conductive member 10. The multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B function as so-called electrodes in the semiconductor element 20. The multiple first conductive columnar portions 22A are electrically connected to the switching circuit 212A of the semiconductor layer 212. In addition, the multiple first conductive columnar portions 22A are electrically connected to the main surfaces 101 of the multiple leads 11A to 11C. As a result, the multiple leads 11A to 11C are electrically connected to the switching circuit 212A. The multiple first conductive columnar portions 22B are electrically connected to the control circuit 212B of the semiconductor layer 212. In addition, most of the multiple first conductive columnar portions 22B are electrically connected to the main surfaces 101 of the multiple leads 12. The remaining first conductive columnar portions 22B are electrically connected to the main surfaces 101 of the pair of leads 13. As a result, the multiple leads 12 and the pair of leads 13 are electrically connected to the control circuit 212B.
　図１３に示すように、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々は、複数の導電パッド２４のいずれかを介して素子本体２１の半導体層２１２に導通している。複数の導電パッド２４は、半導体層２１２の厚さ方向ｚのｚ２側に配置されており、半導体層２１２に接している。これにより、複数の導電パッド２４の各々は、半導体層２１２のスイッチング回路２１２Ａおよび制御回路２１２Ｂのいずれかに導通している。導電パッド２４の構成材料は、アルミニウム（Ａｌ）または銅を含む。その他の導電パッド２４の構成として、半導体層２１２から下方に向けて銅、ニッケル、パラジウムの順に積層された複数の金属層でもよい。導電パッド２４は、素子本体２１のパッシベーション膜２１３に接している。導電パッド２４の一部は、パッシベーション膜２１３の開口２１３Ａから露出している。第１導電性柱状部２２Ａ，２２Ｂは、開口２１３Ａから露出する導電パッド２４の部分から導電部材１０の主面１０１に向けて突出している。第１導電性柱状部２２Ａ，２２Ｂは、たとえば円柱状である。第１導電性柱状部２２Ａ，２２Ｂの構成材料は、たとえば銅を含む。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、たとえば金属めっきからなる。 13, each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B is electrically connected to the semiconductor layer 212 of the element body 21 through one of the multiple conductive pads 24. The multiple conductive pads 24 are arranged on the z2 side of the semiconductor layer 212 in the thickness direction z and are in contact with the semiconductor layer 212. As a result, each of the multiple conductive pads 24 is electrically connected to one of the switching circuit 212A and the control circuit 212B of the semiconductor layer 212. The conductive pad 24 is made of a material that includes aluminum (Al) or copper. Alternatively, the conductive pad 24 may be made of multiple metal layers that are stacked in this order from the semiconductor layer 212 downward, including copper, nickel, and palladium. The conductive pad 24 is in contact with the passivation film 213 of the element body 21. A part of the conductive pad 24 is exposed from the opening 213A of the passivation film 213. The first conductive columnar portions 22A and 22B protrude from the portion of the conductive pad 24 exposed from the opening 213A toward the main surface 101 of the conductive member 10. The first conductive columnar portions 22A and 22B are, for example, cylindrical. The constituent material of the first conductive columnar portions 22A and 22B includes, for example, copper. The multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are made of, for example, metal plating.
　第１導電性柱状部２２Ａ，２２Ｂの先端部２２１は、先端面２２１Ａおよび側面２２１Ｂを有する。先端面２２１Ａは、導電部材１０の主面１０１に対向している。側面２２１Ｂは、先端面２２１Ａにつながり、且つ厚さ方向ｚに対して直交する方向を向く。半導体装置Ａ１０においては、第１導電性柱状部２２Ａ，２２Ｂの先端面２２１Ａは、平坦であり、導電部材１０の主面１０１に対して平行である。図示した例とは異なり、第１導電性柱状部２２Ａ，２２Ｂの先端面２２１Ａは、素子本体２１に向けて凹む凹状であってもよく、導電部材１０の主面１０１に向けて膨出する凸状であってもよい。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、たとえば電解めっきにより形成される。 The tip 221 of the first conductive columnar portion 22A, 22B has a tip surface 221A and a side surface 221B. The tip surface 221A faces the main surface 101 of the conductive member 10. The side surface 221B is connected to the tip surface 221A and faces a direction perpendicular to the thickness direction z. In the semiconductor device A10, the tip surface 221A of the first conductive columnar portion 22A, 22B is flat and parallel to the main surface 101 of the conductive member 10. Unlike the example shown in the figure, the tip surface 221A of the first conductive columnar portion 22A, 22B may be concave toward the element body 21, or may be convex toward the main surface 101 of the conductive member 10. The multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are formed, for example, by electrolytic plating.
　図１３に示すように、絶縁膜２５は、素子本体２１の導電部材１０の主面１０１に対向する側、すなわち素子本体２１において厚さ方向ｚのｚ２側に位置するパッシベーション膜２１３を覆っている。絶縁膜２５は、素子本体２１の導電部材１０の主面１０１に対向する側の表面を保護する。複数の導電パッド２４の各々の一部は、絶縁膜２５から露出している。絶縁膜２５は、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂから離隔している。絶縁膜２５には、厚さ方向ｚに貫通する複数の開口２５１が設けられている。複数の開口２５１のいずれかから、第１導電性柱状部２２Ａ，２２Ｂが露出している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々において、当該第１導電性柱状部２２Ａ，２２Ｂの先端面２２１Ａは、厚さ方向ｚにおいて導電部材１０の主面１０１と絶縁膜２５との間に位置する。絶縁膜２５は、電気絶縁性を有する。絶縁膜２５の構成材料は、たとえばポリイミドである。 As shown in FIG. 13, the insulating film 25 covers the side of the element body 21 facing the main surface 101 of the conductive member 10, i.e., the passivation film 213 located on the z2 side of the element body 21 in the thickness direction z. The insulating film 25 protects the surface of the element body 21 facing the main surface 101 of the conductive member 10. A portion of each of the multiple conductive pads 24 is exposed from the insulating film 25. The insulating film 25 is spaced apart from the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B. The insulating film 25 has multiple openings 251 penetrating in the thickness direction z. The first conductive columnar portions 22A, 22B are exposed from any of the multiple openings 251. In each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B, the tip surface 221A of the first conductive columnar portions 22A and 22B is located between the main surface 101 of the conductive member 10 and the insulating film 25 in the thickness direction z. The insulating film 25 has electrical insulation properties. The insulating film 25 is made of, for example, polyimide.
　接合層３０は、図１３に示すように、導電部材１０の主面１０１と、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂとの双方に接している。接合層３０は、導電性を有する。これにより、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、導電部材１０の主面１０１に電気的に接続されている。接合層３０は、たとえばはんだ（錫および銀を含む金属）である。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々において、接合層３０は、先端部２２１（先端面２２１Ａおよび側面２２１Ｂの双方）に接している。 As shown in FIG. 13, the bonding layer 30 contacts both the main surface 101 of the conductive member 10 and the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B. The bonding layer 30 is conductive. As a result, the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B are electrically connected to the main surface 101 of the conductive member 10. The bonding layer 30 is, for example, solder (a metal containing tin and silver). In each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B, the bonding layer 30 contacts the tip portion 221 (both the tip surface 221A and the side surface 221B).
　本実施形態において、図９および図１２に示すように、複数の第２導電性柱状部２３は、素子本体２１の上に配置されている。複数の第２導電性柱状部２３は、素子本体２１の導電部材１０の主面１０１に対向する側から、厚さ方向ｚのｚ２側に向けて突出している。図３、図９および図１２に示すように、複数の第２導電性柱状部２３の各々は、厚さ方向ｚに見て導電部材１０の主面１０１と重ならない。図３に示すように、複数の第２導電性柱状部２３は、厚さ方向ｚに見て、リード１１Ａと複数のリード１２との間、リード１１Ｃとリード１１Ａとの間、およびリード１１Ｂとリード１１Ｃとの間の３つの領域に配置されている。これら領域それぞれにおいて、複数の第２導電性柱状部２３が、第１方向ｘにおいて間隔を隔てて配置されている。 In this embodiment, as shown in FIG. 9 and FIG. 12, the second conductive columnar parts 23 are arranged on the element body 21. The second conductive columnar parts 23 protrude from the side of the element body 21 facing the main surface 101 of the conductive member 10 toward the z2 side in the thickness direction z. As shown in FIG. 3, FIG. 9 and FIG. 12, each of the second conductive columnar parts 23 does not overlap with the main surface 101 of the conductive member 10 in the thickness direction z. As shown in FIG. 3, the second conductive columnar parts 23 are arranged in three regions between the lead 11A and the leads 12, between the lead 11C and the lead 11A, and between the lead 11B and the lead 11C in the thickness direction z. In each of these regions, the second conductive columnar parts 23 are arranged at intervals in the first direction x.
　本実施形態では、図１４に示すように、複数の第２導電性柱状部２３の上端は、導電パッド２４を介して素子本体２１の半導体層２１２に導通している。図９、図１２、図１４に示すように、複数の第２導電性柱状部２３は、半導体層２１２のスイッチング回路２１２Ａまたは制御回路２１２Ｂに導通している。 In this embodiment, as shown in FIG. 14, the upper ends of the multiple second conductive columnar portions 23 are electrically connected to the semiconductor layer 212 of the element body 21 via the conductive pads 24. As shown in FIGS. 9, 12, and 14, the multiple second conductive columnar portions 23 are electrically connected to the switching circuit 212A or the control circuit 212B of the semiconductor layer 212.
　図１４に示すように、複数の第２導電性柱状部２３の各々は、複数の導電パッド２４のいずれかを介して素子本体２１の半導体層２１２に導通している。第２導電性柱状部２３は、パッシベーション膜２１３の開口２１３Ａから露出する導電パッド２４の部分から、厚さ方向ｚのｚ２側に向けて突出している。第２導電性柱状部２３は、たとえば円柱状である。図３に示すように、第２導電性柱状部２３の厚さ方向ｚ視における面積は、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々の厚さ方向ｚ視における面積と同程度である。第２導電性柱状部２３の構成材料は、たとえば銅を含む。第２導電性柱状部２３の構成材料は、第１導電性柱状部２２Ａ，２２Ｂの構成材料と同一である。複数の第２導電性柱状部２３は、たとえば金属めっきからなる。 As shown in FIG. 14, each of the multiple second conductive columnar parts 23 is electrically connected to the semiconductor layer 212 of the element body 21 via one of the multiple conductive pads 24. The second conductive columnar part 23 protrudes toward the z2 side in the thickness direction z from the portion of the conductive pad 24 exposed from the opening 213A of the passivation film 213. The second conductive columnar part 23 is, for example, cylindrical. As shown in FIG. 3, the area of the second conductive columnar part 23 as viewed in the thickness direction z is approximately the same as the area of each of the multiple first conductive columnar parts 22A and the multiple first conductive columnar parts 22B as viewed in the thickness direction z. The material of the second conductive columnar part 23 includes, for example, copper. The material of the second conductive columnar part 23 is the same as the material of the first conductive columnar parts 22A and 22B. The multiple second conductive columnar parts 23 are, for example, made of metal plating.
　第２導電性柱状部２３の少なくとも先端部２３１は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。したがって、複数の第２導電性柱状部２３の各々は、導電部材１０に導通していない。第２導電性柱状部２３の先端部２３１は、先端面２３１Ａおよび側面２３１Ｂを有する。第２導電性柱状部２３の先端面２３１Ａは、平坦であり、導電部材１０の主面１０１に対して平行である。側面２３１Ｂは、先端面２３１Ａにつながり、且つ厚さ方向ｚに対して直交する方向を向く。図示した例とは異なり、第２導電性柱状部２３は、素子本体２１に向けて凹む凹状であってもよく、厚さ方向ｚのｚ２側に向けて膨出する凸状であってもよい。複数の第２導電性柱状部２３は、たとえば電解めっきにより形成される。 At least the tip 231 of the second conductive columnar portion 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. Therefore, each of the multiple second conductive columnar portions 23 is not electrically connected to the conductive member 10. The tip 231 of the second conductive columnar portion 23 has a tip surface 231A and a side surface 231B. The tip surface 231A of the second conductive columnar portion 23 is flat and parallel to the main surface 101 of the conductive member 10. The side surface 231B is connected to the tip surface 231A and faces in a direction perpendicular to the thickness direction z. Unlike the example shown in the figure, the second conductive columnar portion 23 may be concave toward the element body 21, or may be convex toward the z2 side of the thickness direction z. The multiple second conductive columnar portions 23 are formed, for example, by electrolytic plating.
　図１４に示すように、絶縁膜２５に設けられた複数の開口２５１のいずれかから、第２導電性柱状部２３が露出している。複数の第２導電性柱状部２３の各々において、当該第２導電性柱状部２３の先端面２３１Ａは、厚さ方向ｚにおいて導電部材１０の主面１０１と絶縁膜２５との間に位置する。本実施形態において、第２導電性柱状部２３の先端面２３１Ａは、厚さ方向ｚにおいて第１導電性柱状部２２Ａ，２２Ｂの先端面２２１Ａと同じ位置にある。 As shown in FIG. 14, the second conductive columnar portion 23 is exposed from one of a plurality of openings 251 provided in the insulating film 25. In each of the plurality of second conductive columnar portions 23, the tip surface 231A of the second conductive columnar portion 23 is located between the main surface 101 of the conductive member 10 and the insulating film 25 in the thickness direction z. In this embodiment, the tip surface 231A of the second conductive columnar portion 23 is located at the same position as the tip surfaces 221A of the first conductive columnar portions 22A, 22B in the thickness direction z.
　封止樹脂４０は、図５～図８に示すように、樹脂主面４１、樹脂裏面４２、一対の第１樹脂側面４３１および一対の第２樹脂側面４３２を有する。封止樹脂４０の構成材料は、たとえば黒色のエポキシ樹脂である。 As shown in Figures 5 to 8, the sealing resin 40 has a resin main surface 41, a resin back surface 42, a pair of first resin side surfaces 431, and a pair of second resin side surfaces 432. The constituent material of the sealing resin 40 is, for example, a black epoxy resin.
　図９～図１２に示すように、樹脂主面４１は、厚さ方向ｚにおいて導電部材１０の主面１０１と同じ側を向く。樹脂主面４１は、厚さ方向ｚのｚ１側を向く。図５～図８に示すように、樹脂裏面４２は、樹脂主面４１とは反対側を向く。樹脂裏面４２は、厚さ方向ｚのｚ２側を向く。図４に示すように、樹脂裏面４２から、複数のリード１１Ａ～１１Ｃの裏面１０２、複数のリード１２の裏面１０２、および一対のリード１３の裏面１０２が露出している。 As shown in Figures 9 to 12, the resin main surface 41 faces the same side as the main surface 101 of the conductive member 10 in the thickness direction z. The resin main surface 41 faces the z1 side in the thickness direction z. As shown in Figures 5 to 8, the resin back surface 42 faces the opposite side to the resin main surface 41. The resin back surface 42 faces the z2 side in the thickness direction z. As shown in Figure 4, the back surfaces 102 of the multiple leads 11A to 11C, the back surfaces 102 of the multiple leads 12, and the back surfaces 102 of a pair of leads 13 are exposed from the resin back surface 42.
　図７および図８に示すように、一対の第１樹脂側面４３１は、樹脂主面４１および樹脂裏面４２の双方につながり、且つ第１方向ｘを向く。一対の第１樹脂側面４３１は、第２方向ｙにおいて互いに離隔している。図１０～図１２に示すように、一対の第１樹脂側面４３１の各々から、複数のリード１１Ａ～１１Ｃの端面１１２Ａと、リード１３の端面１３１とが、第１樹脂側面４３１と面一となるように露出している。 As shown in Figures 7 and 8, the pair of first resin side surfaces 431 are connected to both the resin main surface 41 and the resin back surface 42, and face the first direction x. The pair of first resin side surfaces 431 are spaced apart from each other in the second direction y. As shown in Figures 10 to 12, the end faces 112A of the multiple leads 11A to 11C and the end face 131 of the lead 13 are exposed from each of the pair of first resin side surfaces 431 so as to be flush with the first resin side surfaces 431.
　図５および図６に示すように、一対の第２樹脂側面４３２は、樹脂主面４１、樹脂裏面４２および一対の第１樹脂側面４３１のいずれにもつながり、且つ第２方向ｙを向く。一対の第２樹脂側面４３２は、第１方向ｘにおいて互いに離隔している。図９に示すように、第２方向ｙのｙ１側に位置する第２樹脂側面４３２から、複数のリード１２の端面１２１が、第２樹脂側面４３２と面一となるように露出している。第２方向ｙのｙ２側に位置する第２樹脂側面４３２から、リード１１Ｂの複数の副端面１１３Ａが、第２樹脂側面４３２と面一となるように露出している。 As shown in Figures 5 and 6, the pair of second resin side surfaces 432 are connected to all of the resin main surface 41, the resin back surface 42, and the pair of first resin side surfaces 431, and face the second direction y. The pair of second resin side surfaces 432 are spaced apart from each other in the first direction x. As shown in Figure 9, the end faces 121 of the multiple leads 12 are exposed from the second resin side surface 432 located on the y1 side of the second direction y so as to be flush with the second resin side surface 432. The multiple minor end faces 113A of the lead 11B are exposed from the second resin side surface 432 located on the y2 side of the second direction y so as to be flush with the second resin side surface 432.
　次に、半導体装置Ａ１０の作用効果について説明する。 Next, the effects of the semiconductor device A10 will be explained.
　半導体装置Ａ１０は、主面１０１を有する導電部材１０と、導電部材１０に対して厚さ方向ｚのｚ２側に配置され、主面１０１に支持された半導体素子２０と、導電部材１０の一部、および半導体素子２０を覆う封止樹脂４０と、を備える。半導体素子２０は、素子本体２１、複数の第１導電性柱状部２２Ａ、複数の第１導電性柱状部２２Ｂ、および複数の第２導電性柱状部２３を有する。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、素子本体２１から厚さ方向ｚのｚ２側に突出し、厚さ方向ｚにおいて素子本体２１と導電部材１０の主面１０１との間に介在している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々は、素子本体２１および主面１０１の双方に電気的に接続されている。複数の第２導電性柱状部２３の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２３の各々の先端部２３１は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２３の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２３は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ１０の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２３にも伝わる。したがって、半導体装置Ａ１０は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 The semiconductor device A10 includes a conductive member 10 having a main surface 101, a semiconductor element 20 disposed on the z2 side of the conductive member 10 in the thickness direction z and supported by the main surface 101, and a sealing resin 40 covering a part of the conductive member 10 and the semiconductor element 20. The semiconductor element 20 has an element body 21, a plurality of first conductive columnar portions 22A, a plurality of first conductive columnar portions 22B, and a plurality of second conductive columnar portions 23. The plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B protrude from the element body 21 to the z2 side in the thickness direction z, and are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z. Each of the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B is electrically connected to both the element body 21 and the main surface 101. Each of the second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z. The tip 231 of each of the second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the second conductive columnar parts 23 is not electrically connected to the conductive member 10. Unlike the first conductive columnar parts 22A and 22B that function as electrodes, the second conductive columnar parts 23 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A10. With this configuration, the heat generated in the semiconductor element 20 is dissipated by being transmitted to the first conductive columnar parts 22A and 22B and the conductive member 10, and is also transmitted to the second conductive columnar parts 23. Therefore, the semiconductor device A10 can improve the heat dissipation of the heat generated in the semiconductor element 20.
　本実施形態において、複数の第２導電性柱状部２３は、素子本体２１から厚さ方向ｚのｚ２側に突出している。複数の第２導電性柱状部２３は、厚さ方向ｚに見て導電部材１０の主面１０１と重ならない。第２導電性柱状部２３の構成材料は、第１導電性柱状部２２Ａ，２２Ｂの構成材料と同一である。このような構成によれば、複数の第２導電性柱状部２３は、複数の第１導電性柱状部２２Ａ，２２Ｂとともに、素子本体２１の厚さ方向ｚのｚ２側に一括して形成することができる。 In this embodiment, the multiple second conductive columnar portions 23 protrude from the element body 21 toward the z2 side in the thickness direction z. The multiple second conductive columnar portions 23 do not overlap with the main surface 101 of the conductive member 10 when viewed in the thickness direction z. The constituent material of the second conductive columnar portions 23 is the same as the constituent material of the first conductive columnar portions 22A, 22B. With this configuration, the multiple second conductive columnar portions 23 can be formed collectively on the z2 side of the element body 21 in the thickness direction z together with the multiple first conductive columnar portions 22A, 22B.
　複数の第２導電性柱状部２３の各々は、複数の導電パッド２４のいずれかに接しており、当該導電パッド２４から厚さ方向ｚのｚ２側に突出している。このような構成によれば、半導体素子２０で発生した熱を、導電パッド２４を介して第２導電性柱状部２３に効率よく逃がすことができる。このことは、半導体装置Ａ１０の放熱性を向上するうえで好ましい。 Each of the multiple second conductive columnar portions 23 is in contact with one of the multiple conductive pads 24 and protrudes from the conductive pad 24 to the z2 side in the thickness direction z. With this configuration, heat generated in the semiconductor element 20 can be efficiently dissipated to the second conductive columnar portion 23 via the conductive pad 24. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A10.
　図１５～図１８は、第１実施形態に係る半導体装置Ａ１０の変形例を示している。これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付して、重複する説明を省略する。 FIGS. 15 to 18 show modified examples of the semiconductor device A10 according to the first embodiment. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.
　第１変形例：
　図１５は、第１実施形態の第１変形例に係る半導体装置Ａ１１を示している。図１５は、半導体装置Ａ１１の断面図であり、図１４と同様に第２導電性柱状部２３付近の拡大断面図である。 First modified example:
Fig. 15 shows a semiconductor device A11 according to a first modification of the first embodiment. Fig. 15 is a cross-sectional view of the semiconductor device A11, and is an enlarged cross-sectional view of the vicinity of the second conductive columnar portion 23, similar to Fig. 14.
　半導体装置Ａ１１は、素子本体２１上における第２導電性柱状部２３の配置の態様が上記実施形態と異なる。半導体装置Ａ１１において、半導体素子２０は、金属層２６をさらに備える。金属層２６は、絶縁膜２５の上に積層形成されている。金属層２６の構成材料は、たとえば銅を含む。金属層２６は、たとえば金属めっきからなる。 The semiconductor device A11 differs from the above embodiment in the arrangement of the second conductive columnar portion 23 on the element body 21. In the semiconductor device A11, the semiconductor element 20 further includes a metal layer 26. The metal layer 26 is laminated on the insulating film 25. The constituent material of the metal layer 26 includes, for example, copper. The metal layer 26 is, for example, made of metal plating.
　半導体装置Ａ１１において、金属層２６は、導電パッド２４の厚さ方向ｚのｚ２側を向く面および絶縁膜２５の厚さ方向ｚのｚ２側を向く面に跨って積層されている。金属層２６は、第１部２６１を含む。第１部２６１は、導電パッド２４上に積層される部分であり、導電パッド２４に接する。第２導電性柱状部２３は、金属層２６上に配置されており、金属層２６から厚さ方向ｚのｚ２側に突出している。第２導電性柱状部２３は、第１部２６１を介して導電パッド２４に導通している。 In the semiconductor device A11, the metal layer 26 is laminated across the surface of the conductive pad 24 facing the z2 side in the thickness direction z and the surface of the insulating film 25 facing the z2 side in the thickness direction z. The metal layer 26 includes a first portion 261. The first portion 261 is a portion that is laminated on the conductive pad 24 and is in contact with the conductive pad 24. The second conductive columnar portion 23 is disposed on the metal layer 26 and protrudes from the metal layer 26 to the z2 side in the thickness direction z. The second conductive columnar portion 23 is electrically connected to the conductive pad 24 via the first portion 261.
　半導体装置Ａ１１において、複数の第２導電性柱状部２３の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２３の各々の先端部２３１は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２３の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２３は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ１１の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２３にも伝わる。したがって、半導体装置Ａ１１は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 In the semiconductor device A11, each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z. The tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10. Unlike the multiple first conductive columnar parts 22A, 22B that function as electrodes, the multiple second conductive columnar parts 23 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A11. With this configuration, heat generated in the semiconductor element 20 is dissipated by being transmitted to the multiple first conductive columnar parts 22A, 22B and the conductive member 10, and is also transmitted to the multiple second conductive columnar parts 23. Therefore, the semiconductor device A11 can improve the heat dissipation performance of heat generated in the semiconductor element 20.
　複数の第２導電性柱状部２３の各々は、導電パッド２４に接する金属層２６（第１部２６１）を介して導電パッド２４に導通している。このような構成によれば、半導体素子２０で発生した熱を、導電パッド２４および金属層２６を介して第２導電性柱状部２３に効率よく逃がすことができる。このことは、半導体装置Ａ１１の放熱性を向上するうえで好ましい。その他にも、半導体装置Ａ１１は、上記実施形態の半導体装置Ａ１０と同様の構成の範囲において、半導体装置Ａ１０と同様の作用効果を奏する。 Each of the multiple second conductive columnar portions 23 is electrically connected to the conductive pad 24 via the metal layer 26 (first portion 261) that contacts the conductive pad 24. With this configuration, heat generated in the semiconductor element 20 can be efficiently dissipated to the second conductive columnar portion 23 via the conductive pad 24 and the metal layer 26. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A11. In addition, the semiconductor device A11 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
　第２変形例：
　図１６は、第１実施形態の第２変形例に係る半導体装置Ａ１２を示している。図１６は、半導体装置Ａ１２の断面図であり、図１４と同様に第２導電性柱状部２３付近の拡大断面図である。 Second Modification:
Fig. 16 shows a semiconductor device A12 according to a second modification of the first embodiment. Fig. 16 is a cross-sectional view of the semiconductor device A12, and is an enlarged cross-sectional view of the vicinity of the second conductive columnar portion 23, similar to Fig. 14.
　半導体装置Ａ１２は、素子本体２１上における第２導電性柱状部２３の配置の態様が上記実施形態と異なる。半導体装置Ａ１２において、半導体素子２０は、半導体装置Ａ１１と同様に金属層２６を備える。金属層２６は、絶縁膜２５の上に積層形成されている。金属層２６の構成材料は、たとえば銅を含む。金属層２６は、たとえば金属めっきからなる。 The semiconductor device A12 differs from the above embodiment in the arrangement of the second conductive columnar portion 23 on the element body 21. In the semiconductor device A12, the semiconductor element 20 has a metal layer 26, similar to the semiconductor device A11. The metal layer 26 is formed by laminating on the insulating film 25. The constituent material of the metal layer 26 includes, for example, copper. The metal layer 26 is formed, for example, by metal plating.
　半導体装置Ａ１２において、金属層２６は、第２部２６２を含む。第２部２６２は、絶縁膜２５の厚さ方向ｚのｚ２側を向く面に積層されており、複数の導電パッド２４のいずれにも接しない。第２導電性柱状部２３は、第２部２６２上に配置されており、第２部２６２から厚さ方向ｚのｚ２側に突出している。 In the semiconductor device A12, the metal layer 26 includes a second portion 262. The second portion 262 is laminated on the surface of the insulating film 25 facing the z2 side in the thickness direction z, and is not in contact with any of the multiple conductive pads 24. The second conductive columnar portion 23 is disposed on the second portion 262 and protrudes from the second portion 262 to the z2 side in the thickness direction z.
　半導体装置Ａ１２において、複数の第２導電性柱状部２３の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２３の各々の先端部２３１は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２３の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２３は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ１２の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２３にも伝わる。したがって、半導体装置Ａ１２は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 In the semiconductor device A12, each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z. The tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10. Unlike the multiple first conductive columnar parts 22A, 22B that function as electrodes, the multiple second conductive columnar parts 23 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A12. With this configuration, heat generated in the semiconductor element 20 is dissipated by being transmitted to the multiple first conductive columnar parts 22A, 22B and the conductive member 10, and is also transmitted to the multiple second conductive columnar parts 23. Therefore, the semiconductor device A12 can improve the heat dissipation performance of heat generated in the semiconductor element 20.
　複数の第２導電性柱状部２３の各々は、金属層２６（第２部２６２）上に配置されている。第２部２６２は、複数の導電パッド２４のいずれにも接しない。このような構成によれば、複数の第２導電性柱状部２３の配置の自由度を高めることができる。複数の第２導電性柱状部２３を半導体素子２０における発熱部に近づけて配置することで、半導体装置Ａ１２の放熱性の向上が期待できる。その他にも、半導体装置Ａ１２は、上記実施形態の半導体装置Ａ１０と同様の構成の範囲において、半導体装置Ａ１０と同様の作用効果を奏する。 Each of the multiple second conductive columnar portions 23 is disposed on the metal layer 26 (second portion 262). The second portion 262 is not in contact with any of the multiple conductive pads 24. This configuration increases the degree of freedom in arranging the multiple second conductive columnar portions 23. By arranging the multiple second conductive columnar portions 23 close to the heat generating portion of the semiconductor element 20, it is expected that the heat dissipation properties of the semiconductor device A12 will be improved. In addition, the semiconductor device A12 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
　第３変形例：
　図１７および図１８は、第１実施形態の第３変形例に係る半導体装置Ａ１３を示している。図１７は、半導体装置Ａ１３の平面図であり、半導体素子２０および封止樹脂４０を透過している。図１８は、図１７のＸＶＩＩＩ－ＸＶＩＩＩ線に沿う断面図である。図１７においては、透過した半導体素子２０および封止樹脂４０をそれぞれ想像線（二点鎖線）で示している。 Third variant:
Figures 17 and 18 show a semiconductor device A13 according to a third modified example of the first embodiment. Figure 17 is a plan view of the semiconductor device A13, with the semiconductor element 20 and the sealing resin 40 seen through. Figure 18 is a cross-sectional view taken along line XVIII-XVIII in Figure 17. In Figure 17, the semiconductor element 20 and the sealing resin 40 seen through are respectively indicated by imaginary lines (two-dot chain lines).
　半導体装置Ａ１３は、厚さ方向ｚ視における複数の第２導電性柱状部２３の形状が上記実施形態と異なる。半導体装置Ａ１３において、複数の第２導電性柱状部２３の各々は、厚さ方向ｚに見て、第１方向ｘに長状である。第２導電性柱状部２３の厚さ方向ｚ視における面積は、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々の厚さ方向ｚ視における面積よりも大である。 The semiconductor device A13 differs from the above embodiment in the shape of the multiple second conductive columnar portions 23 when viewed in the thickness direction z. In the semiconductor device A13, each of the multiple second conductive columnar portions 23 is elongated in the first direction x when viewed in the thickness direction z. The area of the second conductive columnar portion 23 when viewed in the thickness direction z is larger than the area of each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B when viewed in the thickness direction z.
　半導体装置Ａ１３において、複数の第２導電性柱状部２３の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２３の各々の先端部２３１は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２３の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２３は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ１３の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２３にも伝わる。したがって、半導体装置Ａ１３は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 In the semiconductor device A13, each of the multiple second conductive columnar parts 23 is disposed on the element body 21 and protrudes in the thickness direction z. The tip 231 of each of the multiple second conductive columnar parts 23 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the multiple second conductive columnar parts 23 is not electrically connected to the conductive member 10. Unlike the multiple first conductive columnar parts 22A, 22B that function as electrodes, the multiple second conductive columnar parts 23 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A13. With this configuration, the heat generated in the semiconductor element 20 is dissipated by being transmitted to the multiple first conductive columnar parts 22A, 22B and the conductive member 10, and is also transmitted to the multiple second conductive columnar parts 23. Therefore, the semiconductor device A13 can improve the heat dissipation of heat generated in the semiconductor element 20.
　半導体装置Ａ１３において、第２導電性柱状部２３の厚さ方向ｚ視における面積は、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々の厚さ方向ｚ視における面積よりも大である。このような構成によれば、複数の第２導電性柱状部２３の体積を大きくすることが容易であり、半導体装置Ａ１３の放熱性をより向上することができる。その他にも、半導体装置Ａ１３は、上記実施形態の半導体装置Ａ１０と同様の構成の範囲において、半導体装置Ａ１０と同様の作用効果を奏する。 In the semiconductor device A13, the area of the second conductive columnar portion 23 as viewed in the thickness direction z is larger than the area of each of the multiple first conductive columnar portions 22A and the multiple first conductive columnar portions 22B as viewed in the thickness direction z. With this configuration, it is easy to increase the volume of the multiple second conductive columnar portions 23, and the heat dissipation properties of the semiconductor device A13 can be further improved. In addition, the semiconductor device A13 achieves the same effects as the semiconductor device A10 within the same range of configuration as the semiconductor device A10 of the above embodiment.
　第２実施形態：
　図１９～図２３は、本開示の第２実施形態に係る半導体装置Ａ２０を示している。これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付して、重複する説明を省略する。 Second embodiment:
19 to 23 show a semiconductor device A20 according to a second embodiment of the present disclosure. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated descriptions are omitted.
　図１９は、半導体装置Ａ２０の平面図であり、封止樹脂４０を透過している。図２０は、半導体装置Ａ２０の平面図であり、半導体素子２０および封止樹脂４０を透過している。図２１は、図２０のＸＸＩ－ＸＸＩ線に沿う断面図である。図２２は、図２０のＸＸＩＩ－ＸＸＩＩ線に沿う断面図である。図２３は、図２０のＸＸＩＩＩ－ＸＸＩＩＩ線に沿う断面図である。図１９においては、透過した封止樹脂４０を想像線（二点鎖線）で示している。図２０においては、透過した半導体素子２０および封止樹脂４０をそれぞれ想像線（二点鎖線）で示している。 FIG. 19 is a plan view of the semiconductor device A20, seen through the sealing resin 40. FIG. 20 is a plan view of the semiconductor device A20, seen through the semiconductor element 20 and the sealing resin 40. FIG. 21 is a cross-sectional view taken along line XXI-XXI in FIG. 20. FIG. 22 is a cross-sectional view taken along line XXII-XXII in FIG. 20. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 20. In FIG. 19, the see-through sealing resin 40 is shown by an imaginary line (two-dot chain line). In FIG. 20, the see-through semiconductor element 20 and sealing resin 40 are each shown by an imaginary line (two-dot chain line).
　本実施形態の半導体装置Ａ２０において、半導体素子２０は、上記実施形態の複数の第２導電性柱状部２３に代えて、複数の第２導電性柱状部２７を有する。複数の第２導電性柱状部２７の各々は、素子本体２１から厚さ方向ｚのｚ１側に突出している。複数の第２導電性柱状部２７は、素子本体２１を構成する半導体基板２１１の頂面２１１Ａ（厚さ方向ｚのｚ１側を向く面）に配置されている。図２０～図２２に示すように、複数の第２導電性柱状部２７の各々は、厚さ方向ｚに見て、導電部材１０の主面１０１と重なっていてもよい。複数の第２導電性柱状部２７の配置は特に限定されず、図示した例では、複数の第２導電性柱状部２７は第１方向ｘおよび第２方向ｙの双方に間隔を隔てて配列されている。複数の第２導電性柱状部２７の各々の先端部（厚さ方向ｚのｚ１側の端部）は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。 In the semiconductor device A20 of this embodiment, the semiconductor element 20 has a plurality of second conductive columnar portions 27 instead of the plurality of second conductive columnar portions 23 of the above embodiment. Each of the plurality of second conductive columnar portions 27 protrudes from the element body 21 toward the z1 side in the thickness direction z. The plurality of second conductive columnar portions 27 are arranged on the top surface 211A (the surface facing the z1 side in the thickness direction z) of the semiconductor substrate 211 constituting the element body 21. As shown in Figures 20 to 22, each of the plurality of second conductive columnar portions 27 may overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z. The arrangement of the plurality of second conductive columnar portions 27 is not particularly limited, and in the illustrated example, the plurality of second conductive columnar portions 27 are arranged at intervals in both the first direction x and the second direction y. The tip of each of the multiple second conductive columnar sections 27 (the end on the z1 side in the thickness direction z) is in contact with the sealing resin 40 and is covered by the sealing resin 40.
　第２導電性柱状部２７は、たとえば横断面が楕円形の柱状である。図１９、図２０に示すように、第２導電性柱状部２７の厚さ方向ｚ視における面積は、複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々の厚さ方向ｚ視における面積よりも大である。第２導電性柱状部２７の構成材料は、たとえば銅を含む。複数の第２導電性柱状部２７は、たとえば金属めっきからなる。複数の第２導電性柱状部２７は、たとえば電解めっきにより形成される。詳細な図示説明は省略するが、半導体基板２１１の頂面２１１Ａ（厚さ方向ｚのｚ１側を向く面）の所定領域には導電性の下地層が形成されており、当該下地層上に第２導電性柱状部２７が形成される。図示した例では、第２導電性柱状部２７の厚さ方向ｚの寸法は、第１導電性柱状部２２Ａ，２２Ｂの厚さ方向ｚの寸法よりも大である。 The second conductive columnar portion 27 is, for example, a columnar portion having an elliptical cross section. As shown in FIG. 19 and FIG. 20, the area of the second conductive columnar portion 27 as viewed in the thickness direction z is larger than the area of each of the first conductive columnar portions 22A and the first conductive columnar portions 22B as viewed in the thickness direction z. The material of the second conductive columnar portion 27 includes, for example, copper. The second conductive columnar portions 27 are made of, for example, metal plating. The second conductive columnar portions 27 are formed by, for example, electrolytic plating. Although detailed illustrations are omitted, a conductive base layer is formed in a predetermined region of the top surface 211A (the surface facing the z1 side in the thickness direction z) of the semiconductor substrate 211, and the second conductive columnar portion 27 is formed on the base layer. In the illustrated example, the dimension of the second conductive columnar portion 27 in the thickness direction z is larger than the dimension of the first conductive columnar portions 22A and 22B in the thickness direction z.
　半導体装置Ａ２０は、主面１０１を有する導電部材１０と、導電部材１０に対して厚さ方向ｚのｚ２側に配置され、主面１０１に支持された半導体素子２０と、導電部材１０の一部、および半導体素子２０を覆う封止樹脂４０と、を備える。半導体素子２０は、素子本体２１、複数の第１導電性柱状部２２Ａ、複数の第１導電性柱状部２２Ｂ、および複数の第２導電性柱状部２７を有する。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂは、素子本体２１から厚さ方向ｚのｚ２側に突出し、厚さ方向ｚにおいて素子本体２１と導電部材１０の主面１０１との間に介在している。複数の第１導電性柱状部２２Ａおよび複数の第１導電性柱状部２２Ｂの各々は、素子本体２１および主面１０１の双方に電気的に接続されている。複数の第２導電性柱状部２７の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２７の各々の先端部は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２７の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２７は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ２０の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２７にも伝わる。したがって、半導体装置Ａ２０は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 The semiconductor device A20 includes a conductive member 10 having a main surface 101, a semiconductor element 20 disposed on the z2 side of the conductive member 10 in the thickness direction z and supported by the main surface 101, and a sealing resin 40 covering a part of the conductive member 10 and the semiconductor element 20. The semiconductor element 20 has an element body 21, a plurality of first conductive columnar portions 22A, a plurality of first conductive columnar portions 22B, and a plurality of second conductive columnar portions 27. The plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B protrude from the element body 21 to the z2 side in the thickness direction z, and are interposed between the element body 21 and the main surface 101 of the conductive member 10 in the thickness direction z. Each of the plurality of first conductive columnar portions 22A and the plurality of first conductive columnar portions 22B is electrically connected to both the element body 21 and the main surface 101. Each of the second conductive columnar parts 27 is disposed on the element body 21 and protrudes in the thickness direction z. The tip of each of the second conductive columnar parts 27 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the second conductive columnar parts 27 is not electrically connected to the conductive member 10. Unlike the first conductive columnar parts 22A and 22B that function as electrodes, the second conductive columnar parts 27 do not form a path for a current flowing through the semiconductor element 20 inside the semiconductor device A20. With this configuration, the heat generated in the semiconductor element 20 is dissipated by being transmitted to the first conductive columnar parts 22A and 22B and the conductive member 10, and is also transmitted to the second conductive columnar parts 27. Therefore, the semiconductor device A20 can improve the heat dissipation of the heat generated in the semiconductor element 20.
　複数の第２導電性柱状部２７は、素子本体２１に対して、導電部材１０とは反対側である厚さ方向ｚのｚ１側に突出している。これにより、複数の第２導電性柱状部２７は、厚さ方向ｚに見て導電部材１０の主面１０１と重なるように配置することができ、配置の自由を高めることができる。具体的には、図示した例のように、複数の第２導電性柱状部２７は、厚さ方向ｚに見て導電部材１０の主面１０１と重なるように配置することができる。第２導電性柱状部２７の厚さ方向ｚの寸法を、第１導電性柱状部２２Ａ，２２Ｂの厚さ方向ｚの寸法よりも大きくすることが可能である。このことは、半導体装置Ａ２０の放熱性を向上するうえでより好ましい。 The second conductive columnar portions 27 protrude from the element body 21 toward the z1 side in the thickness direction z, which is the opposite side to the conductive member 10. This allows the second conductive columnar portions 27 to be arranged so as to overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z, thereby increasing the freedom of arrangement. Specifically, as in the illustrated example, the second conductive columnar portions 27 can be arranged so as to overlap the main surface 101 of the conductive member 10 when viewed in the thickness direction z. The dimension of the second conductive columnar portion 27 in the thickness direction z can be made larger than the dimension of the first conductive columnar portions 22A and 22B in the thickness direction z. This is preferable in terms of improving the heat dissipation of the semiconductor device A20.
　第１変形例：
　図２４～図２８は、第２実施形態の第１変形例に係る半導体装置Ａ２１を示している。これらの図において、上記実施形態と同一または類似の要素には、上記実施形態と同一の符号を付して、重複する説明を省略する。 First modified example:
24 to 28 show a semiconductor device A21 according to a first modified example of the second embodiment. In these figures, elements that are the same as or similar to those in the above embodiment are given the same reference numerals as in the above embodiment, and duplicated explanations will be omitted.
　図２４は、半導体装置Ａ２１の平面図であり、封止樹脂４０を透過している。図２５は、半導体装置Ａ２１の平面図であり、半導体素子２０および封止樹脂４０を透過している。図２６は、図２５のＸＸＶＩ－ＸＸＶＩ線に沿う断面図である。図２７は、図２５のＸＸＶＩＩ－ＸＸＶＩＩ線に沿う断面図である。図２８は、図２５のＸＸＶＩＩＩ－ＸＸＶＩＩＩ線に沿う断面図である。図２４においては、透過した封止樹脂４０を想像線（二点鎖線）で示している。図２８においては、透過した半導体素子２０および封止樹脂４０をそれぞれ想像線（二点鎖線）で示している。 FIG. 24 is a plan view of the semiconductor device A21, seen through the sealing resin 40. FIG. 25 is a plan view of the semiconductor device A21, seen through the semiconductor element 20 and the sealing resin 40. FIG. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG. 25. FIG. 27 is a cross-sectional view taken along line XXVII-XXVII in FIG. 25. FIG. 28 is a cross-sectional view taken along line XXVIII-XXVIII in FIG. 25. In FIG. 24, the see-through sealing resin 40 is shown by an imaginary line (two-dot chain line). In FIG. 28, the see-through semiconductor element 20 and sealing resin 40 are each shown by an imaginary line (two-dot chain line).
　本変形例の半導体装置Ａ２１において、半導体素子２０は、複数の第２導電性柱状部２７に加え、複数の第２導電性柱状部２３を有する。複数の第２導電性柱状部２７は、上記実施形態の半導体装置Ａ２０と同様の構成である。複数の第２導電性柱状部２３は、上記第１実施形態の半導体装置Ａ１０と同様の構成である。 In the semiconductor device A21 of this modified example, the semiconductor element 20 has a plurality of second conductive columnar portions 23 in addition to a plurality of second conductive columnar portions 27. The plurality of second conductive columnar portions 27 have the same configuration as the semiconductor device A20 of the above embodiment. The plurality of second conductive columnar portions 23 have the same configuration as the semiconductor device A10 of the above first embodiment.
　半導体装置Ａ２１において、複数の第２導電性柱状部２３および複数の第２導電性柱状部２７の各々は、素子本体２１の上に配置されており、厚さ方向ｚに突出している。複数の第２導電性柱状部２３および第２導電性柱状部２７の各々の先端部は、封止樹脂４０に接しており、当該封止樹脂４０に覆われている。これにより、複数の第２導電性柱状部２３および複数の第２導電性柱状部２７の各々は、導電部材１０に導通していない。複数の第２導電性柱状部２３および複数の第２導電性柱状部２７は、電極として機能する複数の第１導電性柱状部２２Ａ，２２Ｂとは異なり、半導体装置Ａ２１の内部において半導体素子２０に流れる電流の経路を構成しない。このような構成によれば、半導体素子２０で発生した熱は、複数の第１導電性柱状部２２Ａ，２２Ｂおよび導電部材１０に伝わって放熱されるとともに、複数の第２導電性柱状部２３および複数の第２導電性柱状部２７にも伝わる。したがって、半導体装置Ａ２１は、半導体素子２０で発生した熱の放熱性を向上することが可能となる。 In the semiconductor device A21, each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is disposed on the element body 21 and protrudes in the thickness direction z. The tip of each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is in contact with the sealing resin 40 and is covered by the sealing resin 40. As a result, each of the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 is not conductive to the conductive member 10. Unlike the multiple first conductive columnar portions 22A, 22B that function as electrodes, the multiple second conductive columnar portions 23 and the multiple second conductive columnar portions 27 do not form a path for current flowing through the semiconductor element 20 inside the semiconductor device A21. With this configuration, heat generated in the semiconductor element 20 is dissipated by being transferred to the first conductive columnar portions 22A, 22B and the conductive member 10, and is also transferred to the second conductive columnar portions 23 and the second conductive columnar portions 27. Therefore, the semiconductor device A21 can improve the dissipation of heat generated in the semiconductor element 20.
　半導体装置Ａ２１において、半導体素子２０が複数の第２導電性柱状部２３および複数の第２導電性柱状部２７を有することにより、半導体素子２０で発生した熱を厚さ方向ｚの両側に逃がすことができる。このことは、半導体装置Ａ２１の放熱性を向上するうえで好ましい。その他にも、半導体装置Ａ２１は、上記実施形態の半導体装置Ａ１０，Ａ２０と同様の構成の範囲において、半導体装置Ａ１０，Ａ２０と同様の作用効果を奏する。 In the semiconductor device A21, the semiconductor element 20 has a plurality of second conductive columnar portions 23 and a plurality of second conductive columnar portions 27, so that heat generated in the semiconductor element 20 can be dissipated to both sides in the thickness direction z. This is preferable in terms of improving the heat dissipation properties of the semiconductor device A21. In addition, the semiconductor device A21 achieves the same effects as the semiconductor devices A10 and A20 within the same range of configuration as the semiconductor devices A10 and A20 of the above embodiment.
　本開示に係る半導体装置は、上述した実施形態に限定されるものではない。本開示に係る半導体装置の各部の具体的な構成は、種々に設計変更自在である。 The semiconductor device according to the present disclosure is not limited to the above-mentioned embodiment. The specific configuration of each part of the semiconductor device according to the present disclosure can be freely designed in various ways.
　上記実施形態において、導電部材１０が複数のリード１１Ａ～１１Ｃ、複数のリード１２および一対のリード１３から構成される場合について説明したが、本開示はこれに限定されない。導電部材１０は、たとえば所望形状の金属めっきにより構成されてもよい。 In the above embodiment, the conductive member 10 is described as being composed of multiple leads 11A-11C, multiple leads 12, and a pair of leads 13, but the present disclosure is not limited to this. The conductive member 10 may be composed of, for example, metal plating of a desired shape.
　本開示は、以下の付記に記載された実施形態を含む。
　付記１．
　厚さ方向の一方側を向く主面を有する導電部材と、
　前記導電部材に対して前記厚さ方向の一方側に配置され、且つ前記主面に支持された半導体素子と、
　前記導電部材の一部、および前記半導体素子を覆う封止樹脂と、を備え、
　前記半導体素子は、素子本体と、複数の第１導電性柱状部と、少なくとも１つの第２導電性柱状部と、を含み、
　前記複数の第１導電性柱状部の各々は、前記厚さ方向において前記素子本体と前記主面との間に介在し、且つ前記素子本体および前記主面に電気的に接続されており、
　前記少なくとも１つの第２導電性柱状部の各々は、前記素子本体の上に配置され、且つ前記厚さ方向に突出しており、
　前記少なくとも１つの第２導電性柱状部の各々の前記厚さ方向における先端部は、前記封止樹脂に覆われている、半導体装置。
　付記２．
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記素子本体から前記厚さ方向の他方側に突出しており、且つ前記厚さ方向に見て前記主面と重ならない、付記１に記載の半導体装置。
　付記３．
　前記素子本体は、半導体基板と、前記半導体基板に対して前記厚さ方向の他方側に積層された半導体層と、前記半導体層の前記厚さ方向の他方側に配置された複数の導電パッドと、を有し、
　前記複数の第１導電性柱状部の各々は、前記複数の導電パッドのいずれかに導通している、付記２に記載の半導体装置。
　付記４．
　前記複数の第１導電性柱状部の少なくともいずれかは、前記導電パッドに接しており、且つ当該導電パッドから前記厚さ方向の他方側に突出している、付記３に記載の半導体装置。
　付記５．
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記導電パッドに接しており、且つ当該導電パッドから前記厚さ方向の他方側に突出している、付記３または４に記載の半導体装置。
　付記６．
　前記半導体素子は、前記素子本体の前記厚さ方向の他方側を覆う絶縁膜を有し、
　前記複数の導電パッドの各々の少なくとも一部は、前記絶縁膜から露出している、前記付記３ないし５のいずれかに記載の半導体装置。
　付記７．
　前記半導体素子は、前記絶縁膜の上に形成された金属層を有し、
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記金属層から前記厚さ方向の他方側に突出している、付記６に記載の半導体装置。
　付記８．
　前記金属層は、前記複数の導電パッドの少なくともいずれかに接する第１部を含み、
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記第１部を介して前記導電パッドに導通している、付記７に記載の半導体装置。
　付記９．
　前記金属層は、前記複数の導電パッドのいずれにも接しない第２部を含み、
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記第２部の上に配置されている、付記７または８に記載の半導体装置。
　付記１０．
前記少なくとも１つの第２導電性柱状部の構成材料は、前記複数の第１導電性柱状部
の構成材料と同一である、付記２ないし９のいずれかに記載の半導体装置。
　付記１１．
　前記導電部材は、前記厚さ方向の反対側を向く裏面を有し、
　前記封止樹脂は、前記厚さ方向の一方側を向く樹脂主面と、前記厚さ方向の他方側を向く樹脂裏面と、を有し、
　前記裏面は、前記樹脂裏面から露出している、付記１ないし１０のいずれかに記載の半導体装置。
　付記１２．
　前記導電部材の構成材料は、銅を含む、付記１１に記載の半導体装置。
　付記１３．
　前記導電部材は、リードにより構成される、付記１１または１２に記載の半導体装置。
　付記１４．
　前記主面と前記複数の第１導電性柱状部とに接する接合層をさらに備える、付記１に記載の半導体装置。
　付記１５．
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかの前記厚さ方向視における面積は、前記複数の第１導電性柱状部の各々の前記厚さ方向視における面積よりも大である、付記１ないし１４のいずれかに記載の半導体装置。
　付記１６．
　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記素子本体から前記厚さ方向の一方側に突出している、付記１ないし４のいずれかに記載の半導体装置。 The present disclosure includes the embodiments described in the appended claims below.
Appendix 1.
A conductive member having a main surface facing one side in a thickness direction;
a semiconductor element disposed on one side of the conductive member in the thickness direction and supported by the main surface;
a sealing resin that covers a portion of the conductive member and the semiconductor element,
The semiconductor element includes an element body, a plurality of first conductive columnar portions, and at least one second conductive columnar portion;
each of the plurality of first conductive columnar portions is interposed between the element body and the main surface in the thickness direction and is electrically connected to the element body and the main surface;
Each of the at least one second conductive columnar portion is disposed on the element body and protrudes in the thickness direction;
a tip portion in the thickness direction of each of the at least one second conductive columnar portion is covered with the sealing resin.
Appendix 2.
2. The semiconductor device of claim 1, wherein at least one of the at least one second conductive columnar portions protrudes from the element body to the other side in the thickness direction and does not overlap with the main surface when viewed in the thickness direction.
Appendix 3.
the element body includes a semiconductor substrate, a semiconductor layer stacked on the other side of the semiconductor substrate in the thickness direction, and a plurality of conductive pads arranged on the other side of the semiconductor layer in the thickness direction;
3. The semiconductor device according to claim 2, wherein each of the first conductive columnar portions is electrically connected to one of the conductive pads.
Appendix 4.
4. The semiconductor device according to claim 3, wherein at least one of the plurality of first conductive columnar portions is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
Appendix 5.
5. The semiconductor device according to claim 3, wherein at least one of the at least one second conductive columnar portion is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
Appendix 6.
the semiconductor element has an insulating film covering the other side of the element body in the thickness direction,
6. The semiconductor device according to claim 3, wherein at least a portion of each of the plurality of conductive pads is exposed from the insulating film.
Appendix 7.
the semiconductor element has a metal layer formed on the insulating film;
7. The semiconductor device according to claim 6, wherein at least one of the at least one second conductive columnar portions protrudes from the metal layer to the other side in the thickness direction.
Appendix 8.
the metal layer includes a first portion in contact with at least one of the plurality of conductive pads;
8. The semiconductor device according to claim 7, wherein at least one of the at least one second conductive columnar portion is electrically connected to the conductive pad via the first portion.
Appendix 9.
the metal layer includes a second portion that does not contact any of the plurality of conductive pads;
The semiconductor device according to claim 7 or 8, wherein at least one of the at least one second conductive columnar portion is disposed on the second portion.
Appendix 10.
10. The semiconductor device according to claim 2, wherein a constituent material of the at least one second conductive columnar portion is the same as a constituent material of the plurality of first conductive columnar portions.
Appendix 11.
The conductive member has a back surface facing the opposite side in the thickness direction,
the sealing resin has a resin main surface facing one side in the thickness direction and a resin back surface facing the other side in the thickness direction,
11. The semiconductor device according to claim 1, wherein the back surface is exposed from the resin back surface.
Appendix 12.
12. The semiconductor device according to claim 11, wherein a constituent material of the conductive member includes copper.
Appendix 13.
13. The semiconductor device according to claim 11, wherein the conductive member is a lead.
Appendix 14.
2. The semiconductor device according to claim 1, further comprising a bonding layer in contact with the main surface and the plurality of first conductive columnar portions.
Appendix 15.
15. A semiconductor device according to any one of claims 1 to 14, wherein the area of at least one of the at least one second conductive columnar portions as viewed in the thickness direction is larger than the area of each of the multiple first conductive columnar portions as viewed in the thickness direction.
Appendix 16.
5. The semiconductor device according to claim 1, wherein at least one of the at least one second conductive columnar portion protrudes from the element body to one side in the thickness direction.
Ａ１０，Ａ１１，Ａ１２，Ａ１３，Ａ２０，Ａ２１：半導体装置
１０：導電部材　　　　１０１：主面
１０２：裏面　　　　１１Ａ，１１Ｂ，１１Ｃ：リード
１１１：主部　　　　１１２：側部
１１２Ａ：端面　　　　１１２Ｂ：切込部
１１３：突出部　　　　１１３Ａ：副端面
１２，１３：リード　　　　１２１，１３１：端面
２０：半導体素子　　　　２１：素子本体
２１１：半導体基板　　　　２１１Ａ：頂面
２１２：半導体層　　　　２１２Ａ：スイッチング回路
２１２Ｂ：制御回路　　　　２１３：パッシベーション膜
２１３Ａ：開口　　　　２２Ａ，２２Ｂ：第１導電性柱状部
２２１：先端部　　　　２２１Ａ：先端面
２２１Ｂ：側面　　　　２３：第２導電性柱状部
２３１：先端部　　　　２３１Ａ：先端面
２３１Ｂ：側面　　　　２４：導電パッド
２４１：導電パッド２　　　　２５：絶縁膜
２５１：開口　　　　２６：金属層
２６１：第１部　　　　２６２：第２部
２７：第２導電性柱状部　　　　３０：接合層
４０：封止樹脂　　　　４１：樹脂主面
４２：樹脂裏面　　　　４３１：第１樹脂側面
４３２：第２樹脂側面 A10, A11, A12, A13, A20, A21: semiconductor device 10: conductive member 101: main surface 102: back surface 11A, 11B, 11C: lead 111: main portion 112: side portion 112A: end surface 112B: notch portion 113: protrusion 113A: minor end surface 12, 13: lead 121, 131: end surface 20: semiconductor element 21: element body 211: semiconductor substrate 211A: top surface 212: semiconductor layer 212A: switching circuit 212B: control circuit 213: passivation film 213A: opening 22A, 22B: first conductive columnar portion 221: tip portion 221A: tip surface 221B: side surface 23: second conductive columnar portion 231: tip portion 231A: tip surface 231B: side surface 24: Conductive pad 241: Conductive pad 2 25: Insulating film 251: Opening 26: Metal layer 261: First portion 262: Second portion 27: Second conductive columnar portion 30: Bonding layer 40: Sealing resin 41: Resin main surface 42: Resin back surface 431: First resin side surface 432: Second resin side surface

Claims (16)

  1. 　厚さ方向の一方側を向く主面を有する導電部材と、
    　前記導電部材に対して前記厚さ方向の一方側に配置され、且つ前記主面に支持された半導体素子と、
    　前記導電部材の一部、および前記半導体素子を覆う封止樹脂と、を備え、
    　前記半導体素子は、素子本体と、複数の第１導電性柱状部と、少なくとも１つの第２導電性柱状部と、を含み、
    　前記複数の第１導電性柱状部の各々は、前記厚さ方向において前記素子本体と前記主面との間に介在し、且つ前記素子本体および前記主面に電気的に接続されており、
    　前記少なくとも１つの第２導電性柱状部の各々は、前記素子本体の上に配置され、且つ前記厚さ方向に突出しており、
    　前記少なくとも１つの第２導電性柱状部の各々の前記厚さ方向における先端部は、前記封止樹脂に覆われている、半導体装置。     A conductive member having a main surface facing one side in a thickness direction;
    a semiconductor element disposed on one side of the conductive member in the thickness direction and supported by the main surface;
    a sealing resin that covers a portion of the conductive member and the semiconductor element,
    The semiconductor element includes an element body, a plurality of first conductive columnar portions, and at least one second conductive columnar portion;
    each of the plurality of first conductive columnar portions is interposed between the element body and the main surface in the thickness direction and is electrically connected to the element body and the main surface;
    Each of the at least one second conductive columnar portion is disposed on the element body and protrudes in the thickness direction;
    a tip portion in the thickness direction of each of the at least one second conductive columnar portion is covered with the sealing resin.
  2. 　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記素子本体から前記厚さ方向の他方側に突出しており、且つ前記厚さ方向に見て前記主面と重ならない、請求項１に記載の半導体装置。 The semiconductor device according to claim 1, wherein at least one of the at least one second conductive columnar portion protrudes from the element body to the other side in the thickness direction and does not overlap with the main surface when viewed in the thickness direction.
  3. 　前記素子本体は、半導体基板と、前記半導体基板に対して前記厚さ方向の他方側に積層された半導体層と、前記半導体層の前記厚さ方向の他方側に配置された複数の導電パッドと、を有し、
    　前記複数の第１導電性柱状部の各々は、前記複数の導電パッドのいずれかに導通している、請求項２に記載の半導体装置。     the element body includes a semiconductor substrate, a semiconductor layer stacked on the other side of the semiconductor substrate in the thickness direction, and a plurality of conductive pads arranged on the other side of the semiconductor layer in the thickness direction;
    The semiconductor device according to claim 2 , wherein each of the plurality of first conductive columnar portions is electrically connected to one of the plurality of conductive pads.
  4. 　前記複数の第１導電性柱状部の少なくともいずれかは、前記導電パッドに接しており、且つ当該導電パッドから前記厚さ方向の他方側に突出している、請求項３に記載の半導体装置。 The semiconductor device according to claim 3, wherein at least one of the plurality of first conductive columnar portions is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
  5. 　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記導電パッドに接しており、且つ当該導電パッドから前記厚さ方向の他方側に突出している、請求項３または４に記載の半導体装置。 The semiconductor device according to claim 3 or 4, wherein at least one of the at least one second conductive columnar portion is in contact with the conductive pad and protrudes from the conductive pad to the other side in the thickness direction.
  6. 　前記半導体素子は、前記素子本体の前記厚さ方向の他方側を覆う絶縁膜を有し、
    　前記複数の導電パッドの各々の少なくとも一部は、前記絶縁膜から露出している、請求項３ないし５のいずれかに記載の半導体装置。     the semiconductor element has an insulating film covering the other side of the element body in the thickness direction,
    6. The semiconductor device according to claim 3, wherein at least a portion of each of said plurality of conductive pads is exposed from said insulating film.
  7. 　前記半導体素子は、前記絶縁膜の上に形成された金属層を有し、
    　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記金属層から前記厚さ方向の他方側に突出している、請求項６に記載の半導体装置。     the semiconductor element has a metal layer formed on the insulating film;
    The semiconductor device according to claim 6 , wherein at least one of the at least one second conductive columnar portion protrudes from the metal layer to the other side in the thickness direction.
  8. 　前記金属層は、前記複数の導電パッドの少なくともいずれかに接する第１部を含み、
    　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記第１部を介して前記導電パッドに導通している、請求項７に記載の半導体装置。     the metal layer includes a first portion in contact with at least one of the plurality of conductive pads;
    The semiconductor device according to claim 7 , wherein at least one of the at least one second conductive columnar portion is electrically connected to the conductive pad via the first portion.
  9. 　前記金属層は、前記複数の導電パッドのいずれにも接しない第２部を含み、
    　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記第２部の上に配置されている、請求項７または８に記載の半導体装置。     the metal layer includes a second portion that does not contact any of the plurality of conductive pads;
    The semiconductor device according to claim 7 , wherein at least one of the at least one second conductive columnar portion is disposed on the second portion.
  10. 前記少なくとも１つの第２導電性柱状部の構成材料は、前記複数の第１導電性柱状部の構成材料と同一である、請求項２ないし９のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 2 to 9, wherein the constituent material of the at least one second conductive columnar portion is the same as the constituent material of the plurality of first conductive columnar portions.
  11. 　前記導電部材は、前記厚さ方向の反対側を向く裏面を有し、
    　前記封止樹脂は、前記厚さ方向の一方側を向く樹脂主面と、前記厚さ方向の他方側を向く樹脂裏面と、を有し、
    　前記裏面は、前記樹脂裏面から露出している、請求項１ないし１０のいずれかに記載の半導体装置。     The conductive member has a back surface facing the opposite side in the thickness direction,
    the sealing resin has a resin main surface facing one side in the thickness direction and a resin back surface facing the other side in the thickness direction,
    The semiconductor device according to claim 1 , wherein the rear surface is exposed from the resin rear surface.
  12. 　前記導電部材の構成材料は、銅を含む、請求項１１に記載の半導体装置。 The semiconductor device according to claim 11, wherein the conductive member is made of a material that includes copper.
  13. 　前記導電部材は、リードにより構成される、請求項１１または１２に記載の半導体装置。 The semiconductor device according to claim 11 or 12, wherein the conductive member is a lead.
  14. 　前記主面と前記複数の第１導電性柱状部とに接する接合層をさらに備える、請求項１に記載の半導体装置。 The semiconductor device of claim 1, further comprising a bonding layer in contact with the main surface and the first conductive columnar portions.
  15. 　前記少なくとも１つの第２導電性柱状部の少なくともいずれかの前記厚さ方向視における面積は、前記複数の第１導電性柱状部の各々の前記厚さ方向視における面積よりも大である、請求項１ないし１４のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 14, wherein the area of at least one of the at least one second conductive columnar portion as viewed in the thickness direction is greater than the area of each of the plurality of first conductive columnar portions as viewed in the thickness direction.
  16. 　前記少なくとも１つの第２導電性柱状部の少なくともいずれかは、前記素子本体から前記厚さ方向の一方側に突出している、請求項１ないし４のいずれかに記載の半導体装置。 The semiconductor device according to any one of claims 1 to 4, wherein at least one of the at least one second conductive columnar portion protrudes from the element body to one side in the thickness direction.
PCT/JP2024/001205 2023-01-24 2024-01-18 Semiconductor device WO2024157863A1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056925A (en) * 2012-09-12 2014-03-27 Shinko Electric Ind Co Ltd Semiconductor package, semiconductor device, and method of manufacturing semiconductor package
JP2020077723A (en) * 2018-11-07 2020-05-21 ローム株式会社 Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014056925A (en) * 2012-09-12 2014-03-27 Shinko Electric Ind Co Ltd Semiconductor package, semiconductor device, and method of manufacturing semiconductor package
JP2020077723A (en) * 2018-11-07 2020-05-21 ローム株式会社 Semiconductor device

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