JP7231382B2 - semiconductor equipment - Google Patents

Description

The present invention relates to a semiconductor device whose package format is QFN.

A QFN (Quad For Non-Lead Package) is known as one of package formats for semiconductor devices. Patent Document 1 discloses an example of a QFN semiconductor device.

In the semiconductor device, the end surfaces of the plurality of leads (the terminal portions in Patent Document 1) are exposed so as to be flush with the side surfaces of the sealing resin (the package material in Patent Document 1). In addition, the back surfaces of the leads are exposed so as to be flush with the bottom surface of the sealing resin. Therefore, the semiconductor device has the advantage of being able to reduce the mounting area with respect to the wiring board, compared to a QFP (Quad Flat Package) in which leads protrude from the side surface of the sealing resin.

In the manufacture of QFN semiconductor devices, blade dicing is used to separate them into individual pieces, as is the case with other package-type semiconductor devices. As a result of singulation, the end faces of a plurality of leads appear from the side faces of the sealing resin. When the volume of each of the plurality of leads is increased for reasons such as improvement of mountability, the area of the end face naturally increases. In this case, the blade dicing increases the amount of metal burrs generated on the end faces of the plurality of leads. If the amount of metal burrs increases, there is a concern that the mountability of the semiconductor device on the wiring substrate will deteriorate.

JP 2017-157603 A

In view of the above circumstances, it is an object of the present invention to provide a semiconductor device capable of suppressing metal burrs generated at the end faces of leads exposed from the side faces of the sealing resin.

According to the present invention, a first lead having a first main surface and a first back surface facing opposite sides in the thickness direction and extending in a first direction orthogonal to the thickness direction; a semiconductor element having a plurality of first electrodes provided on a side facing the first main surface in a direction, the plurality of first electrodes being connected to the first main surface; and one of the first leads. and a sealing resin covering the semiconductor element, wherein the first lead includes a main portion extending in the first direction and a pair of side portions connected to both ends of the main portion in the first direction. , each of the pair of side portions has a first end surface that is connected to both the first main surface and the first back surface and faces the first direction, and the sealing resin has the thickness a bottom surface facing the same side as the first back surface in the longitudinal direction and exposing the first back surface; and a pair of first side surfaces connected to the bottom surface and separated from each other in the first direction, A pair of is smaller than the dimension of the first back surface of the main portion.

In the practice of the present invention, preferably, each of the pair of side portions has a constriction extending from the first main surface to the first back surface and recessed inwardly of the side portions from both sides in the second direction. part is formed.

In the practice of the present invention, each of the pair of side portions preferably includes a notch extending from the first main surface to the first back surface and recessed inwardly of the side portions from one side in the second direction. part is formed.

In the practice of the present invention, preferably, each of the pair of side portions extends from the first main surface to the first back surface, is recessed from the first end surface in the first direction, and has the first end surface A notch is formed dividing the two regions.

In carrying out the present invention, preferably the area of the first main surface is larger than the area of the first rear surface.

In carrying out the present invention, preferably, the second main surface has a second main surface facing the same side as the first main surface in the thickness direction, and a second back surface facing the opposite side to the second main surface, and the second main surface A plurality of second leads positioned on one side of the second direction relative to the first lead are further provided, and a part of each of the plurality of second leads is covered with the sealing resin, and the semiconductor element has the thickness It has a plurality of second electrodes provided on the side facing the first main surface in the longitudinal direction, and at least some of the plurality of second electrodes are connected to the plurality of second main surfaces.

In the practice of the present invention, each of the plurality of second leads preferably has a second end surface connected to both the second main surface and the second back surface and facing the second direction, and the sealing the resin has a pair of second side surfaces connected to both the bottom surface and the pair of first side surfaces and separated from each other in the second direction, and a plurality of the second back surfaces are exposed from the bottom surface; From the second side surface located on one side in the second direction, a plurality of the second end surfaces are exposed so as to be flush with the second side surface.

In carrying out the present invention, preferably, in each of the plurality of second leads, the area of the second main surface is larger than the area of the second rear surface.

In carrying out the present invention, preferably, the semiconductor element has a semiconductor substrate and a semiconductor layer laminated on the semiconductor substrate on a side facing the first main surface in the thickness direction, and the semiconductor layer includes a switching circuit and a control circuit that conducts to the switching circuit, the plurality of first electrodes conducts to the switching circuit, and the plurality of second electrodes conducts to the control circuit. ing.

In the practice of the present invention, preferably, each of the plurality of first electrodes and the plurality of second electrodes connected to the plurality of second main surfaces are electrically connected to either the switching circuit or the control circuit. and a columnar portion projecting from the base toward one of the first main surface and the second main surface, the columnar portion projecting from the first main surface and the second main surface. It is electrically connected to either one.

In carrying out the present invention, preferably, the constituent material of the columnar portion includes copper.

In the practice of the present invention, preferably, a bonding layer interposed between one of the first main surface and the second main surface and the columnar portion is provided, and the columnar portion extends in the thickness direction from the It has a protective layer provided on the side facing either the first principal surface or the second principal surface.

In carrying out the present invention, preferably, the constituent material of the protective layer is nickel.

Preferably, in the practice of the present invention, the first lead includes a first input terminal, a second input terminal and an output terminal, and the first input terminal, the second input terminal and the output terminal are arranged in the second direction. arranged along the

In the practice of the present invention, preferably, the first input terminal is positioned between the output terminal and the plurality of second leads in the second direction, and the second input terminal is positioned more the second lead than the output terminal. Located on the other side in the second direction.

In carrying out the present invention, preferably, the second input terminal includes a plurality of projecting portions projecting from the other side of the main portion in the second direction, and each of the plurality of projecting portions extends from the first main surface. and the first back surface, has a sub-end surface facing the second direction, and is located on the other side in the second direction, the plurality of sub-end surfaces are connected to the second side surface. It is exposed so that it is flush with the surface.

According to the semiconductor device of the present invention, it is possible to suppress the occurrence of metal burrs on the end faces of the leads exposed from the side faces of the sealing resin.

Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view of a semiconductor device according to one embodiment of the present invention; FIG. 2 is a plan view (transmissive through a sealing resin) of the semiconductor device shown in FIG. 1; FIG. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1 (semiconductor element and sealing resin are transparent); 2 is a bottom view of the semiconductor device shown in FIG. 1; FIG. 2 is a front view of the semiconductor device shown in FIG. 1; FIG. 2 is a rear view of the semiconductor device shown in FIG. 1; FIG. 2 is a right side view of the semiconductor device shown in FIG. 1; FIG. 2 is a left side view of the semiconductor device shown in FIG. 1; FIG. 4 is a partially enlarged view of FIG. 3; FIG. 1 is a partially enlarged plan view of a semiconductor device according to an embodiment of the invention; FIG. 4 is a partially enlarged view of FIG. 3; FIG. 4 is a cross-sectional view along line XII-XII in FIG. 3; FIG. 4 is a cross-sectional view along line XIII-XIII in FIG. 3; FIG. 4 is a cross-sectional view along line XIV-XIV in FIG. 3; FIG. 4 is a cross-sectional view along line XV-XV of FIG. 3; FIG. FIG. 13 is a partially enlarged view (near a first electrode) of FIG. 12; FIG. 13 is a partially enlarged view (near a second electrode) of FIG. 12; FIG. 16 is a partially enlarged view (near a second electrode) of FIG. 15;

Modes for carrying out the present invention (hereinafter referred to as "embodiments") will be described with reference to the accompanying drawings.

A semiconductor device A10 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 18. FIG. The semiconductor device A10 includes a first lead 10, a plurality of second leads 21, a pair of third leads 22, a semiconductor element 30, a bonding layer 39 and a sealing resin 40. As shown in FIG. 1, the package format of the semiconductor device A10 is QFN. The semiconductor element 30 is a flip-chip type LSI in which a switching circuit 321 and a control circuit 322 (details of which will be described later) are configured. In the semiconductor device A10, the switching circuit 321 converts DC power (voltage) into AC power (voltage). The semiconductor device A10 is used, for example, as one element forming a circuit of a DC/DC converter. Here, FIG. 2 is transparent through the sealing resin 40 for convenience of understanding. For convenience of understanding, FIG. 3 shows the semiconductor element 30 and the sealing resin 40 through. In these figures, the semiconductor element 30 and the encapsulation resin 40 that are transmitted through are indicated by imaginary lines (double-dot chain lines). The objects and areas illustrated in FIG. 10 are the same as those illustrated in FIG.

In the description of the semiconductor device A10, the thickness direction of the first lead 10 is called "thickness direction z". A direction perpendicular to the thickness direction z is called a “first direction x”. A direction orthogonal to both the thickness direction z and the first direction x is called a "second direction y". As shown in FIGS. 1 and 2, the semiconductor device A10 has a square shape when viewed along the thickness direction z. In addition, in the description of the semiconductor device A10, for convenience, the side on which the plurality of second leads 21 are located in the second direction y is referred to as "one side in the second direction y". The side on which the first lead 10 is positioned in the second direction y is called "the other side in the second direction y".

As shown in FIG. 2, the first lead 10, the plurality of second leads 21, and the pair of third leads 22 support the semiconductor element 30 and form terminals for mounting the semiconductor device A10 on the wiring board. there is As shown in FIGS. 12 to 15, each of the first lead 10, the plurality of second leads 21 and the pair of third leads 22 is partially covered with a sealing resin 40. As shown in FIG. The first lead 10, the plurality of second leads 21 and the pair of third leads 22 are all constructed from the same lead frame. A constituent material of the lead frame is, for example, copper (Cu) or a copper alloy.

As shown in FIGS. 3 and 4, the first lead 10 has a strip shape extending in the second direction y when viewed along the thickness direction z. As shown in FIGS. 12 to 14, the first lead 10 has a first main surface 101 and a first rear surface 102 facing opposite sides in the thickness direction z. The first main surface 101 faces one side in the thickness direction z and faces the semiconductor element 30 . The first major surface 101 is covered with the sealing resin 40 . The first back surface 102 faces the other side in the thickness direction z. The first rear surface 102 is exposed from the sealing resin 40 .

As shown in FIG. 3, first lead 10 includes three terminals: first input terminal 10A, second input terminal 10B and output terminal 10C. The first input terminal 10A and the second input terminal 10B receive DC power (voltage) to be converted in the semiconductor device A10. The first input terminal 10A is a positive electrode (P terminal). The second input terminal 10B is a negative electrode (N terminal). The output terminal 10</b>C outputs AC power (voltage) converted by the switching circuit 321 formed in the semiconductor element 30 . These terminals are arranged in the second direction y from one side to the other side in the second direction y in the order of the first input terminal 10A, the output terminal 10C, and the second input terminal 10B.

As shown in FIG. 3, the first input terminal 10A is positioned between the plurality of second leads 21 and the output terminal 10C in the second direction y. The output terminal 10C is located between the first input terminal 10A and the second input terminal 10B in the second direction y. Each of first input terminal 10A and output terminal 10C includes main portion 11 and a pair of side portions 12 . As shown in FIGS. 3 and 4, the main portion 11 extends in the first direction x. In first lead 10 , semiconductor element 30 is supported by first main surface 101 of main portion 11 . The pair of side portions 12 are connected to both ends of the main portion 11 in the first direction x. As shown in FIGS. 13 and 14 , each of the pair of side portions 12 has a first end surface 121 . The first end surface 121 is connected to both the first main surface 101 and the first back surface 102 and faces the first direction x. The first end surface 121 is exposed from the sealing resin 40 .

As shown in FIG. 9, a constricted portion 122 is formed in each of the pair of side portions 12 of the first input terminal 10A and the output terminal 10C. The constricted portion 122 extends from the first main surface 101 to the first rear surface 102 and is recessed inwardly of the side portion 12 from both sides in the second direction y. The constricted portion 122 is in contact with the sealing resin 40 . Due to the constricted portion 122, in the first input terminal 10A and the output terminal 10C, the dimension b in the second direction y of each of the pair of first end faces 121 becomes the dimension B in the second direction y of the first rear surface 102 of the main portion 11. less than

FIG. 10 shows a first input terminal 10A and an output terminal 10C of a semiconductor device A11 that is a modification of the semiconductor device A10. A notch portion 124 is formed in each of the pair of side portions 12 of the first input terminal 10A and the output terminal 10C of the semiconductor device A11. The cutout portion 124 extends from the first main surface 101 to the first rear surface 102 and is recessed inwardly of the side portion 12 from one side in the second direction y. The notch 124 is in contact with the sealing resin 40 . In the first input terminal 10A and the output terminal 10C, the dimension b in the second direction y of each of the pair of first end faces 121 is the same as the dimension in the second direction y of the first rear surface 102 of the main portion 11 due to the notch 124 as well. smaller than B.

As shown in FIG. 3, the second input terminal 10B is positioned on the other side in the second direction y with respect to the output terminal 10C. The second input terminal 10B includes a main portion 11, a pair of side portions 12 and a plurality of projecting portions 13. As shown in FIG. The plurality of protruding portions 13 protrude from the other side of the main portion 11 in the second direction y. A sealing resin 40 is filled between two adjacent protrusions 13 . As shown in FIG. 12 , each of the plurality of protrusions 13 has a secondary end surface 131 . The secondary end surface 131 is connected to both the first main surface 101 and the first back surface 102 and faces the other side in the second direction y. The secondary end surface 131 is exposed from the sealing resin 40 . As shown in FIG. 7, the plurality of sub-end faces 131 are arranged at predetermined intervals along the first direction x.

As shown in FIG. 11, cutout portions 123 are formed in each of the pair of side portions 12 of the second input terminal 10B. The cut portion 123 extends from the first main surface 101 to the first rear surface 102 and is recessed from the first end surface 121 in the first direction x. Thereby, the first end face 121 is divided into two regions separated from each other in the second direction y. In the second input terminal 10B, the dimension b in the second direction y of each of the pair of first end faces 121 is larger than the dimension B in the second direction y of the first rear surface 102 of the main portion 11 due to the notch 123 as well. becomes small. Note that the dimension b here is the sum of the dimension b1 in the second direction y of one region of the first end face 121 and the dimension b2 in the second direction y of the other region of the first end face 121 ( b=b1+b2). The cut portion 123 is filled with the sealing resin 40 .

As shown in FIGS. 3 and 4, the area of first main surface 101 is larger than the area of first back surface 102 in each of first input terminal 10A, second input terminal 10B and output terminal 10C. In the example shown by the semiconductor device A10, the areas of the first back surfaces 102 of the first input terminals 10A and the output terminals 10C are both equal. The area of the first back surface 102 of the second input terminal 10B is larger than the area of the first back surface 102 of each of the first input terminal 10A and the output terminal 10C.

In each of first input terminal 10A, second input terminal 10B and output terminal 10C, first main surface 101 of main portion 11 on which semiconductor element 30 is supported may be plated with silver (Ag), for example. Furthermore, in each of the first input terminal 10A, the second input terminal 10B and the output terminal 10C, the first back surface 102, the pair of first end surfaces 121 and the plurality of sub-end surfaces 131 exposed from the sealing resin 40 are coated with tin, for example. (Sn) plating may be applied. Instead of tin plating, for example, a plurality of metal plating layers of nickel (Ni), palladium (Pd), and gold (Au) may be used.

The plurality of second leads 21 are located on one side of the first lead 10 in the second direction y, as shown in FIG. Any one of the plurality of second leads 21 is a ground terminal of the control circuit 322 including the semiconductor element 30 . Power (voltage) for driving the control circuit 322 or an electric signal for transmission to the control circuit 322 is input to each of the plurality of other second leads 21 . As shown in FIGS. 3, 4 and 12, each of the plurality of second leads 21 has a second major surface 211, a second rear surface 212 and a second end surface 213. As shown in FIGS. The second main surface 211 faces the same side as the first main surface 101 of the first lead 10 in the thickness direction z and faces the semiconductor element 30 . The second main surface 211 is covered with the sealing resin 40 . Semiconductor element 30 is supported by second main surface 211 . The second rear surface 212 faces the side opposite to the second major surface 211 . The second rear surface 212 is exposed from the sealing resin 40 . The second end surface 213 is connected to both the second main surface 211 and the second back surface 212 and faces one side in the second direction y. The second end surface 213 is exposed from the sealing resin 40 . As shown in FIG. 8, the plurality of second end faces 213 are arranged at predetermined intervals along the first direction x.

As shown in FIGS. 3 and 4 , in each of the plurality of second leads 21 , the area of the second main surface 211 is larger than the area of the second rear surface 212 . Note that the areas of the plurality of second back surfaces 212 are all equal. The second main surface 211 of the plurality of second leads 21 supporting the semiconductor element 30 may be plated with silver, for example. Furthermore, the second rear surface 212 and the second end surface 213 of the plurality of second leads 21 exposed from the sealing resin 40 may be plated with tin, for example. Instead of tin plating, for example, multiple metal platings in which nickel, palladium, and gold are laminated in this order may be employed.

The pair of third leads 22 are positioned between the first lead 10 (first input terminal 10A) and the plurality of second leads 21 in the second direction y, as shown in FIG. The pair of third leads 22 are separated from each other in the first direction x. An electrical signal or the like for transmission to the control circuit 322 configured in the semiconductor element 30 is input to each of the pair of third leads 22 . As shown in FIGS. 3, 4 and 15, each of the pair of third leads 22 has a third main surface 221, a third rear surface 222 and a third end surface 223. FIG. The third principal surface 221 faces the same side as the first principal surface 101 of the first lead 10 in the thickness direction z and faces the semiconductor element 30 . The third main surface 221 is covered with the sealing resin 40 . Semiconductor element 30 is supported by third main surface 221 . The third rear surface 222 faces the side opposite to the third main surface 221 . The third rear surface 222 is exposed from the sealing resin 40 . The third end surface 223 is connected to both the third main surface 221 and the third rear surface 222 and faces the first direction x. The third end surface 223 is exposed from the sealing resin 40 . The third end face 223 is arranged along the second direction y along with each region of the first end face 121 of the first lead 10 .

As shown in FIGS. 3 and 4 , in each of the pair of third leads 22 , the area of the third main surface 221 is larger than the area of the third back surface 222 . The third main surface 221 of the pair of second leads 21 supporting the semiconductor element 30 may be plated with silver, for example. Furthermore, the third rear surface 222 and the third end surface 223 of the pair of third leads 22 exposed from the sealing resin 40 may be plated with tin, for example. Instead of tin plating, for example, multiple metal platings in which nickel, palladium, and gold are laminated in this order may be employed.

The semiconductor element 30 is supported by a first lead 10, a plurality of second leads 21 and a pair of third leads 22, as shown in FIGS. The semiconductor element 30 is covered with a sealing resin 40 . As shown in FIGS. 12 to 18, the semiconductor element 30 has a semiconductor substrate 31, a semiconductor layer 32, a plurality of first electrodes 33A, a plurality of second electrodes 33B, a passivation film 34 and a surface protective film 35. FIG.

As shown in FIGS. 16 to 18, the semiconductor substrate 31 supports the semiconductor layer 32, the first electrode 33A, the second electrode 33B, the passivation film 34 and the surface protection film 35 below. The constituent material of the semiconductor substrate 31 is, for example, Si (silicon) or silicon carbide (SiC).

As shown in FIGS. 12 to 15, the semiconductor layer 32 is stacked on the semiconductor substrate 31 on the side facing the first main surface 101 of the first lead 10 in the thickness direction z. The semiconductor layer 32 includes a plurality of types of p-type semiconductors and n-type semiconductors based on different amounts of doped elements. A switching circuit 321 and a control circuit 322 electrically connected to the switching circuit 321 are formed in the semiconductor layer 32 . The switching circuit 321 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), an IGBT (Insulated Gate Bipolar Transistor), or the like. In the example shown by the semiconductor device A10, the switching circuit 321 is divided into two regions, a high voltage region (upper arm circuit) and a low voltage region (lower arm circuit). Each region is composed of one n-channel MOSFET. The control circuit 322 includes a gate driver for driving the switching circuit 321, a bootstrap circuit corresponding to the high voltage region of the switching circuit 321, and the like, and performs control for normally driving the switching circuit 321. . A wiring layer (not shown) is further formed in the semiconductor layer 32 . The wiring layer electrically connects the switching circuit 321 and the control circuit 322 to each other.

As shown in FIGS. 12 to 15, the plurality of first electrodes 33A and the plurality of second electrodes 33B are provided on the side facing the first main surface 101 of the first lead 10 in the thickness direction z. The multiple first electrodes 33A and the multiple second electrodes 33B are in contact with the semiconductor layer 32 . The multiple first electrodes 33</b>A are electrically connected to the switching circuit 321 of the semiconductor layer 32 . In addition, the plurality of first electrodes 33A are connected to the first main surface 101 of the first lead 10. As shown in FIG. As a result, the first lead 10 is electrically connected to the switching circuit 321 . Also, the plurality of second electrodes 33B are electrically connected to the control circuit 322 of the semiconductor layer 32 . In addition, most of the plurality of second electrodes 33B are connected to the second major surfaces 211 of the plurality of second leads 21 . The remaining second electrodes 33B are connected to the third main surfaces 221 of the pair of third leads 22 . Thereby, the plurality of second leads 21 and the pair of third leads 22 are electrically connected to the control circuit 322 .

As shown in FIGS. 16 to 18, each of the plurality of first electrodes 33A and the plurality of second electrodes 33B has a base portion 331 and a columnar portion 332. As shown in FIGS. The base 331 is in contact with the wiring layer formed on the semiconductor layer 32 . Thereby, the base 331 is electrically connected to either the switching circuit 321 or the control circuit 322 of the semiconductor layer 32 . The base portion 331 is composed of, for example, an aluminum (Al) layer or a plurality of metal layers stacked downward from the semiconductor layer 32 in the order of copper, nickel, and palladium. The columnar portion 332 protrudes from the base portion 331 toward any one of the first main surface 101 of the first lead 10, the second main surface 211 of the second lead 21, and the third main surface 221 of the third lead 22. . A constituent material of the columnar portion 332 includes copper.

As shown in FIGS. 16 to 18, the columnar portion 332 extends along the thickness direction z of the first main surface 101 of the first lead 10, the second main surfaces 211 of the plurality of second leads 21, and the third lead 22. It has a protective layer 332</b>A provided on the side facing any one of the third main surfaces 221 . The constituent material of the protective layer 332A is nickel. The plurality of first electrodes 33A and the plurality of second electrodes 33B are formed by electrolytic plating.

As shown in FIGS. 16 to 18, the passivation film 34 covers the lower surface of the semiconductor layer 32 and part of the bases 331 of the plurality of first electrodes 33A and the plurality of second electrodes 33B. The passivation film 34 has electrical insulation. The passivation film 34 is, for example, a silicon oxide film (SiO ₂ ) in contact with the lower surface of the semiconductor layer 32 and part of the plurality of bases 331, and a silicon nitride film (Si ₃ N ₄ ) laminated on the silicon oxide film. Consists of A plurality of openings 341 are provided in the passivation film 34 . A portion of the base 331 is exposed through the opening 341 .

As shown in FIGS. 16 to 18, the surface protective film 35 covers the passivation film 34. As shown in FIGS. In each of the plurality of first electrodes 33A and the plurality of second electrodes 33B, part of each of the base portion 331 and the columnar portion 332 is in contact with the surface protective film 35 . The surface protection film 35 has electrical insulation. A constituent material of the surface protection film 35 is, for example, polyimide.

As shown in FIGS. 16 to 18, the bonding layer 39 includes the first principal surface 101 of the first lead 10, the second principal surfaces 211 of the plurality of second leads 21, and the third principal surfaces 221 of the third leads 22. and the columnar portion 332 of each of the plurality of first electrodes 33A and the plurality of second electrodes 33B. The bonding layer 39 has conductivity. In the example shown by semiconductor device A10, bonding layer 39 is a metal containing tin and silver. The joining layer 39 electrically joins the columnar portion 332 to any one of the first main surface 101 , the second main surface 211 and the third main surface 221 . The bonding layer 39 is in contact with the protective layer 332A of the columnar portion 332 . In the example shown by the semiconductor device A10, the bonding layer 39 is formed integrally with the plurality of first electrodes 33A and the plurality of second electrodes 33B by electroplating.

The sealing resin 40 has a top surface 41, a bottom surface 42, a pair of first side surfaces 431 and a pair of second side surfaces 432, as shown in FIGS. A constituent material of the sealing resin 40 is, for example, a black epoxy resin.

As shown in FIGS. 12 to 15, the top surface 41 faces the same side as the first main surface 101 of the first lead 10 in the thickness direction z. As shown in FIGS. 5-8, the bottom surface 42 faces away from the top surface 41 . As shown in FIG. 4 , the first rear surface 102 of the first lead 10 , the second rear surfaces 212 of the plurality of second leads 21 , and the third rear surfaces 222 of the pair of third leads 22 are exposed from the bottom surface 42 . .

As shown in FIGS. 7 and 8, the pair of first side surfaces 431 are connected to both the top surface 41 and the bottom surface 42 and face the first direction x. The pair of first side surfaces 431 are separated from each other in the second direction y. 13 to 15, from each of the pair of first side surfaces 431, each region of the first end surface 121 of the first lead 10 and the third end surface 223 of the third lead 22 are separated from each other by the first side surfaces 431. It is exposed so that it is flush with.

As shown in FIGS. 5 and 6, the pair of second side surfaces 432 are connected to all of the top surface 41, the bottom surface 42 and the pair of first side surfaces 431, and face the second direction y. The pair of second side surfaces 432 are separated from each other in the first direction x. As shown in FIG. 12 , the second end surfaces 213 of the plurality of second leads 21 are exposed from the second side surface 432 positioned on one side in the second direction y so as to be flush with the second side surface 432 . there is From the second side surface 432 positioned on the other side in the second direction y, a plurality of sub-end surfaces 131 of the second input terminal 10B (first lead 10) are exposed so as to be flush with the second side surface 432. .

Next, functions and effects of the semiconductor device A10 will be described.

The semiconductor device A10 includes first leads 10 extending in the first direction x and connected to the plurality of first electrodes 33A of the semiconductor element 30, and a sealing resin 40 partially covering the first leads 10. As shown in FIG. The first lead 10 has a pair of first end surfaces 121 facing the first direction x and exposed from a pair of first side surfaces 431 of the sealing resin 40 . Each of the pair of first end surfaces 121 is flush with the first side surface 431 . In the second direction y, the dimension b of each of the pair of first end faces 121 is smaller than the dimension B of the first rear surface 102 of the main portion 11 of the first lead 10 . Thereby, the area of each of the pair of first end surfaces 121 can be made smaller than those areas in the conventional QFN semiconductor device. Therefore, when the semiconductor device A10 is singulated by blade dicing, the amount of metal burrs generated on the pair of first end faces 121 is further reduced. Therefore, according to the semiconductor device A10, it is possible to suppress the occurrence of metal burrs on the end surfaces of the leads exposed from the side surfaces of the sealing resin 40. FIG.

As shown in FIG. 9, a constricted portion 122 is formed in each of the pair of side portions 12 of the first lead 10 (the first input terminal 10A and the output terminal 10C). Thereby, the dimension b of each of the pair of first end faces 121 can be made smaller than the dimension B of the first rear surface 102 of the main portion 11 of the first lead 10 in the second direction y. As shown in FIG. 10, each of the pair of side portions 12 may have a notch portion 124 instead of the constricted portion 122 . Also in this configuration, the dimension b of each of the pair of first end surfaces 121 can be made smaller than the dimension B of the first rear surface 102 of the main portion 11 in the second direction y. Also, the constricted portion 122 and the notch portion 124 are in contact with the sealing resin 40 in the first direction x. This can prevent the first lead 10 from slipping out of the pair of first side surfaces 431 of the sealing resin 40 .

Furthermore, as shown in FIG. 11, a notch 123 is formed in each of the pair of side portions 12 of the first lead 10 (second input terminal 10B). This also allows the dimension b of each of the pair of first end faces 121 to be smaller than the dimension B of the first back surface 102 of the main portion 11 of the first lead 10 in the second direction y. The cut portion 123 is filled with the sealing resin 40 . As a result, the first lead 10 is in contact with the sealing resin 40 in the first direction x. Therefore, it is possible to prevent the first lead 10 from slipping out of the pair of first side surfaces 431 of the sealing resin 40 .

The second input terminal 10B includes a plurality of projecting portions 13 projecting from the other side of the main portion 11 in the second direction y. Each of the multiple protrusions 13 has a secondary end surface 131 facing the second direction y. The plurality of sub-end surfaces 131 are exposed from a second side surface 432 of the sealing resin 40 positioned on the other side in the second direction y. As a result, the second input terminal 10B is in contact with the sealing resin 40 on the other side in the second direction y. Therefore, it is possible to prevent the second input terminal 10B from slipping out of the second side surface 432 located on the other side in the second direction y.

In first lead 10 , the area of first main surface 101 is larger than the area of first rear surface 102 . As a result, the first lead 10 is in contact with the sealing resin 40 on the side facing the first rear surface 102 in the thickness direction z. Therefore, it is possible to prevent the first lead 10 from slipping out of the bottom surface 42 of the sealing resin 40 . Moreover, the area of the first main surface 101 to which the plurality of first electrodes 33A of the semiconductor element 30 are connected can be made larger. This makes it possible to increase the number of first electrodes 33A.

The semiconductor device A10 further includes a plurality of second leads 21 to which at least some of the plurality of second electrodes 33B of the semiconductor element 30 are connected. In each of the plurality of second leads 21 , the area of the second main surface 211 is larger than the area of the second rear surface 212 . Therefore, as with the relationship between the first main surface 101 and the first rear surface 102 of the first lead 10 described above, the plurality of second leads 21 can be prevented from slipping out of the bottom surface 42 of the sealing resin 40 . In addition, since the area of the plurality of second main surfaces 211 to which the plurality of second electrodes 33B are connected can be increased, the number of the plurality of second electrodes 33B can be increased.

A switching circuit 321 is configured in the semiconductor layer 32 of the semiconductor element 30 . The switching circuit 321 is electrically connected to the plurality of first electrodes 33A. On the other hand, the first rear surface 102 of the first lead 10 is exposed from the bottom surface 42 of the sealing resin 40 . Thus, when the semiconductor device A10 is used, the heat generated from the semiconductor element 30 by driving the switching circuit 321 can be efficiently dissipated to the outside. Further, as described above, the dimension B of the first rear surface 102 of the main portion 11 of the first lead 10 is larger than the dimension b of the pair of first end surfaces 121 in the second direction y. As a result, the area of the first rear surface 102 of the main portion 11 can be increased, so that the heat dissipation of the semiconductor device A10 can be further improved.

Each of the plurality of first electrodes 33A has a base portion 331 electrically connected to the switching circuit 321 and a columnar portion 332 projecting from the base portion 331 toward the first main surface 101 of the first lead 10 . A constituent material of the columnar portion 332 includes copper. The columnar portion 332 has a smaller length and a larger cross-sectional area than the bonding wire. Therefore, the parasitic resistance between the first lead 10 and the switching circuit 321 can be reduced compared to the case where the first lead 10 and the base 331 are connected by a bonding wire. Reducing the parasitic resistance has the effect of reducing the on-resistance and noise in the switching circuit 321 .

The semiconductor device A10 further includes a bonding layer 39 interposed between the first main surface 101 of the first lead 10 and the columnar portion 332 of the first electrode 33A. The columnar portion 332 has a protective layer 332A provided on the side facing the first main surface 101 in the thickness direction z. The constituent material of the protective layer 332A is nickel. Accordingly, when the first electrode 33</b>A of the semiconductor element 30 is electrically joined to the first main surface 101 by reflow, it is possible to prevent the pillars 332 from being eroded by the tin contained in the joining layer 39 .

The invention is not limited to the embodiments described above. The specific configuration of each part of the present invention can be changed in various ways.

A10, A11: semiconductor device 10: first lead 10A: first input terminal 10B: second input terminal 10C: output terminal 101: first main surface 102: first rear surface 11: main part 12: side part 121: first End surface 122: Constricted portion 123: Notch portion 124: Notch portion 13: Protruding portion 131: Sub-end surface 21: Second lead 211: Second main surface 212: Second back surface 213: Second end surface 22: Third lead 221: Third main surface 222: Third back surface 223: Third end surface 30: Semiconductor element 31: Semiconductor substrate 32: Semiconductor layer 321: Switching circuit 322: Control circuit 33A: First electrode 33B: Second electrode 331: Base 332: Columnar shape Part 332A: Protective layer 34: Passivation film 341: Opening 35: Surface protective film 39: Bonding layer 40: Sealing resin 41: Top surface 42: Bottom surface 431: First side surface 432: Second side surface B: Dimensions b, b1, b2: dimension z: thickness direction x: first direction y: second direction

Claims (13)

a first lead having a first main surface and a first back surface facing opposite to each other in the thickness direction and extending in a first direction orthogonal to the thickness direction;
a semiconductor element having a plurality of first electrodes provided on a side facing the first main surface in the thickness direction, the plurality of first electrodes being connected to the first main surface;
A sealing resin covering a portion of the first lead and the semiconductor element,
the first lead includes a main portion extending in the first direction and a pair of side portions connected to both sides of the main portion in the first direction;
each of the pair of side portions has a first end face facing the first direction;
The sealing resin has a bottom surface facing the same side as the first back surface in the thickness direction and exposing the first back surface , and a pair of first side surfaces separated from each other in the first direction. ,
From each of the pair of first side surfaces, the first end surface is exposed so as to be flush with one of the pair of first side surfaces ,
The dimension of the first end surface of each of the pair of side portions in a second direction orthogonal to both the thickness direction and the first direction is greater than the dimension of the first rear surface in the second direction. is also small, and
the first rear surface has a pair of edges located on opposite sides with respect to the first end surfaces of the pair of side portions in the second direction;
Each of the pair of edges includes a first edge included in the main portion and extending in the first direction, and a pair of side portions individually included in the pair of side portions and extending in the first direction of the first edge. a pair of second edges connected on both sides,
each of the pair of second edges is individually connected to the first end face of each of the pair of side portions;
The semiconductor device, wherein the dimension of the first edge in the first direction is larger than the dimension of each of the pair of second edges in the first direction. each of the pair of side portions is formed with a constricted portion extending from the first main surface to the first rear surface and recessed inwardly of the first lead from both sides in the second direction ;
2. The semiconductor device according to claim 1 , wherein said constricted portion includes one of said pair of second edges . 3. The semiconductor device according to claim 1, wherein the area of said first main surface is larger than the area of said first back surface . Each has a second main surface facing the same side as the first main surface in the thickness direction and a second back surface facing the opposite side to the second main surface in the thickness direction, and further comprising a plurality of second leads located on one side of the second direction relative to the one lead;
a portion of each of the plurality of second leads is covered with the sealing resin;
The semiconductor element has a plurality of second electrodes provided on a side facing the first main surface in the thickness direction,
4. The semiconductor device according to claim 1 , wherein at least part of said plurality of second electrodes are connected to said second main surface of each of said plurality of second leads. each of the plurality of second leads has a second end surface facing the second direction;
The sealing resin has a pair of second side surfaces separated from each other in the second direction,
the second rear surface of each of the plurality of second leads is exposed from the bottom surface;
wherein the second end surface of each of the plurality of second leads is exposed from one of the pair of second side surfaces so as to be flush with one of the pair of second side surfaces. Item 5. The semiconductor device according to item 4 . 6. The semiconductor device according to claim 5 , wherein the area of said second main surface is larger than the area of said second back surface in each of said plurality of second leads. The semiconductor element has a semiconductor substrate and a semiconductor layer laminated on the semiconductor substrate on a side facing the first main surface in the thickness direction,
a switching circuit and a control circuit electrically connected to the switching circuit are configured in the semiconductor layer,
The plurality of first electrodes are electrically connected to the switching circuit,
7. The semiconductor device according to claim 5, wherein said plurality of second electrodes are electrically connected to said control circuit . Each of the plurality of first electrodes and each of the plurality of second electrodes connected to the second main surface of each of the plurality of second leads are selected from either the switching circuit or the control circuit. and a columnar portion projecting from the base toward either the first main surface or the second main surface,
8. The semiconductor device according to claim 7 , wherein said columnar portion is electrically connected to either said first main surface or said second main surface . 9. The semiconductor device according to claim 8 , wherein said columnar portion contains copper . further comprising a bonding layer interposed between one of the first principal surface and the second principal surface and the columnar portion;
10. The semiconductor device according to claim 9, wherein said columnar portion has a protective layer provided on a side facing either said first main surface or said second main surface in said thickness direction. 11. The semiconductor device according to claim 10 , wherein said protective layer is nickel . the first lead includes a first input terminal and an output terminal;
12. The semiconductor device according to claim 7, wherein said first input terminal and said output terminal are arranged along said second direction . 13. The semiconductor device according to claim 12, wherein said first input terminal is positioned between said output terminal and said plurality of second leads in said second direction .

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