WO2024149281A1 - 超声波换能器及电子设备 - Google Patents

超声波换能器及电子设备 Download PDF

Info

Publication number
WO2024149281A1
WO2024149281A1 PCT/CN2024/071513 CN2024071513W WO2024149281A1 WO 2024149281 A1 WO2024149281 A1 WO 2024149281A1 CN 2024071513 W CN2024071513 W CN 2024071513W WO 2024149281 A1 WO2024149281 A1 WO 2024149281A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive layer
ultrasonic transducer
electrode
transducer according
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2024/071513
Other languages
English (en)
French (fr)
Inventor
庞慰
牛鹏飞
张孟伦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin University
Original Assignee
Tianjin University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin University filed Critical Tianjin University
Publication of WO2024149281A1 publication Critical patent/WO2024149281A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems ; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/06—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy operating with piezoelectric effect or with electrostriction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems ; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators

Definitions

  • the present application relates to the field of semiconductor technology, and in particular to an ultrasonic transducer and electronic equipment.
  • Ultrasonic transducers and sensors are devices that generate or sense ultrasonic energy. Ultrasonic transducers have good applications in ultrasonic ranging, ultrasonic imaging, ultrasonic non-destructive testing, ultrasonic fingerprint recognition, ultrasonic flow detection, ultrasonic mechanical feedback, etc. For example, they are used in ultrasonic imagers, ultrasonic radars, sonar detection, sweeping robots, ultrasonic smoke alarms, ultrasonic flow meters and other specific products and scenarios.
  • MEMS Micro-Electro-Mechanical Systems
  • MEMS is a technology for developing miniaturized mechanical and electromechanical components (i.e., devices and structures) based on semiconductor process flow.
  • Devices developed based on MEMS technology have the advantages of small size, high performance, and easy integration with electronic circuit systems and other MEMS devices.
  • MEMS standard processes can be used for mass production and wafer-level packaging to obtain low-cost, high-performance miniaturized devices.
  • miniature ultrasonic transducers developed based on MEMS technology can also be used in wearable devices and other aspects. Therefore, MEMS ultrasonic transducers are receiving more and more attention.
  • MEMS ultrasonic transducers involves the emission and reception of ultrasonic signals.
  • the emission and reception performance is the key indicator that determines the quality of the product. Due to its small size, the ultrasonic emission and reception performance of MEMS ultrasonic transducers is somewhat inferior to that of large block ultrasonic transducers.
  • an embodiment of the present application provides an ultrasonic transducer and an electronic device.
  • the present application provides an ultrasonic transducer, comprising a conductive layer and a vibrating membrane arranged on the conductive layer; wherein the vibrating membrane comprises a first electrode, a first piezoelectric layer and a second electrode stacked from bottom to top, a first AC power supply with a DC bias is connected between the first electrode and the conductive layer, and a second AC power supply is connected between the first electrode and the second electrode; a cavity is formed between the conductive layer and the vibrating membrane; when the vibrating membrane is in a working state, the The portion of the vibration membrane opposite to the cavity is a curved surface, or, when the vibration membrane is in a working state or not in a working state, when observed from a direction parallel to the conductive layer, the portion of the vibration membrane opposite to the cavity is a curved surface.
  • a first dielectric layer is further provided between the conductive layer and the vibration membrane.
  • an insulating layer is further provided on a side of the conductive layer away from the vibration membrane.
  • the conductive layer has a concave portion on a side close to the vibration membrane, and at least a portion of the cavity is formed between the vibration membrane and the concave portion;
  • the conductive layer has a convex portion on a side close to the vibration film, and at least a portion of the cavity is formed between the vibration film and the convex portion.
  • the conductive layer has a concave portion on a side close to the vibration membrane, and at least a portion of the cavity is formed between the vibration membrane and the concave portion
  • the curved portion of the vibration membrane is bent toward the recessed portion
  • the curved surface portion of the vibration membrane is curved in a direction away from the recessed portion.
  • the first dielectric layer is disposed on a side of the conductive layer close to the vibration membrane.
  • a top area of the curved portion contacts the first dielectric layer.
  • a top region of the curved portion is fixedly connected to the first dielectric layer.
  • the concave portion when the curved surface portion of the vibration membrane is bent toward the concave portion, the concave portion is a curved surface structure with the same curvature as that of the curved surface portion.
  • a portion of the cavity is formed between a planar region of the conductive layer outside the recess and the vibration membrane.
  • a width of the planar region when viewed from a direction parallel to the conductive layer, is less than 1/5 of a width of the recess.
  • the conductive layer has a convex portion on a side close to the vibration membrane, and when at least a portion of the cavity is formed between the vibration membrane and the convex portion, the curved surface portion of the vibration membrane bends in a direction away from the convex portion.
  • the curvature of the curved surface portion is the same as the curvature of the convex portion.
  • the cavity is realized by a sacrificial layer process, and a first release channel communicating with the cavity is provided on the vibration membrane.
  • a sealed protective layer is disposed on a side of the vibration membrane away from the conductive layer.
  • the cavity is realized by a sacrificial layer process, and a second release channel communicating with the cavity is disposed on the conductive layer.
  • the interior of the cavity is in a vacuum state.
  • a width of the curved portion of the vibration membrane when viewed from a direction parallel to the conductive layer, is greater than 1/40 of a depth of the curved portion.
  • a width of the curved portion of the vibration membrane when viewed from a direction parallel to the conductive layer, is greater than 1/20 of a depth of the curved portion.
  • a width of the curved portion of the vibration membrane when viewed from a direction parallel to the conductive layer, is greater than 1/10 of a depth of the curved portion.
  • the first electrode includes a first sub-electrode, a second dielectric layer, and a second sub-electrode arranged from bottom to top.
  • the first AC power source having a DC bias is connected between the first sub-electrode and the conductive layer, and the second AC power source is connected between the second sub-electrode and the second electrode.
  • the vibration membrane further includes a second piezoelectric layer and a third electrode, the second piezoelectric layer is arranged on a side of the second electrode away from the first piezoelectric layer, and the third electrode is arranged on a side of the second piezoelectric layer away from the second electrode.
  • a third alternating current power source is connected between the second electrode and the third electrode.
  • the present application further provides an electronic device, comprising the ultrasonic transducer described in any of the above embodiments.
  • the ultrasonic transducer proposed in this application has a vibration membrane that is driven by both electrostatic force and piezoelectric force. Compared with a single drive form, the vibration amplitude of the vibration membrane caused by the electrostatic force and piezoelectric force is larger, thereby making the performance of the ultrasonic transducer better.
  • the vibration membrane is not a completely planar structure, especially in the working state, the curved surface of the vibration membrane can greatly improve the performance of the ultrasonic transducer. Therefore, the curved surface ultrasonic transducer driven by both electrostatic force and piezoelectric force proposed in this application will have very excellent ultrasonic transmission and reception performance.
  • FIGS. 1 to 11 are schematic diagrams of the structures of ultrasonic transducers provided in embodiments of the present application.
  • the present application provides an ultrasonic transducer, as shown in Figures 1 to 11, the present application provides an ultrasonic transducer including a conductive layer 100 and a vibrating membrane 200 arranged on the conductive layer 100; wherein the vibrating membrane 200 includes a first electrode 210, a first piezoelectric layer 220 and a second electrode 230 stacked from bottom to top, a first AC power supply 300 with a DC bias is connected between the first electrode 210 and the conductive layer 100, and a second AC power supply 400 is connected between the first electrode 210 and the second electrode 230; a cavity 500 is formed between the conductive layer 100 and the vibrating membrane 200; when the vibrating membrane 200 is in a working state, when observed from a direction parallel to the conductive layer 100, the portion of the vibrating membrane 200 opposite to the cavity 500 is a curved surface, or, when the vibrating membrane 200 is in a working state and when it is
  • the vibration of the vibrating membrane 200 is achieved by driving the vibrating membrane 200 with both electrostatic force and piezoelectric force.
  • the vibration amplitude of the vibrating membrane 200 caused by driving the vibrating membrane 200 with both electrostatic force and piezoelectric force is larger, thereby making the performance of the ultrasonic transducer more excellent.
  • the electrostatic force refers to the electrostatic interaction force between charged bodies.
  • the piezoelectric force driving is based on the inverse piezoelectric effect of piezoelectric materials.
  • an alternating electric field (DC+AC) with a DC bias between the first electrode 210 and the conductive layer 100, the vibration amplitude of the vibrating membrane 200 is increased.
  • An alternating electric field (AC) is applied between the second electrode 230, causing the deformation of the first piezoelectric layer 220, thereby driving the vibrating membrane 200 to vibrate at a certain frequency; the electrostatic force and the piezoelectric force jointly drive the vibrating membrane 200 to vibrate, thereby emitting ultrasonic waves.
  • the vibrating membrane 200 is not a completely planar structure, especially in the working state, the curved vibrating membrane 200 can greatly improve the performance of the MEMS ultrasonic transducer. Therefore, the curved ultrasonic transducer driven by the electrostatic force and the piezoelectric force proposed in this application will have very excellent ultrasonic emission and reception performance.
  • the vibration membrane 200 may be a completely planar structure or may include a curved portion 210 .
  • a DC electric field may be applied between the vibration membrane 200 and the conductive layer 100 to make the vibration membrane 200 present a curved state.
  • a first dielectric layer 110 is further provided between the conductive layer 100 and the vibrating membrane 200, and the first dielectric layer 110 plays an insulating role.
  • the first dielectric layer 110 may not be provided between the conductive layer 100 and the vibrating membrane 200 of the ultrasonic transducer.
  • the insulating relationship between the conductive layer 100 and the vibrating membrane 200 can be achieved by properly setting the shapes and/or relative positions of the conductive layer 100 and the vibrating membrane 200.
  • the interior of the conductive layer cavity 500 may be in a vacuum state, which can achieve better electrostatic force driving, while reducing the damping of the vibration membrane 200 during vibration, and can further improve the vibration performance of the vibration membrane 200.
  • an insulating layer 600 may be further provided on the side of the conductive layer 100 away from the vibrating membrane 200.
  • the insulating layer 600 and the conductive layer 100 may be collectively referred to as a substrate, which is a composite substrate, such as a silicon (Si) substrate.
  • the composite substrate may also include other layers, which is not limited in the present application.
  • the ultrasonic transducer may be directly bonded or adhered to the substrate, and the insulating layer 600 may serve as an insulator between the substrate and the conductive layer 100.
  • the conductive layer 100 has a concave portion 101 on one side close to the vibrating membrane 200, and at least a portion of the cavity 500 is formed between the vibrating membrane 200 and the concave portion 101.
  • the conductive layer 100 has a recess 101 on one side close to the vibration membrane 200, and when at least a portion of the cavity 500 is formed between the vibration membrane 200 and the recess 101, the curved surface 201 of the vibration membrane 200 bends toward the recess 101.
  • the curved surface 201 of the vibration membrane 200 is bent in a direction away from the concave portion 101.
  • the distance between the first electrode 210 for applying the electrostatic force and the conductive layer 100 in the structure is Larger, because the spacing is increased, this structure has certain advantages in the processing and manufacturing process of ultrasonic transducers.
  • the first dielectric layer 110 is disposed on a side of the conductive layer 100 close to the vibration membrane 200 .
  • the vibration membrane 200 is not in contact with the first dielectric layer 110 on the conductive layer 100 when the device is in operation or in non-operation state.
  • the top region 2011 of the curved portion 201 contacts the first dielectric layer 110.
  • the middle region of the first electrode 210 for applying the electrostatic driving force i.e., the top region 2011 of the curved portion 201 contacts the first dielectric layer 110.
  • the magnitude of the electrostatic driving force is closely related to the distance between the first electrode 210 and the conductive layer 100. Under the same charge, the smaller the distance between the first electrode 210 and the conductive layer 100, the greater the electrostatic force, and better ultrasonic emission performance can be obtained.
  • the top region 2011 of the curved surface portion 201 of the vibrating membrane 200 is fixedly connected to the first dielectric layer 110.
  • the vibrating membrane 200 may be bonded to the first dielectric layer 110 via the bonding layer 111. This helps to form a MEMS ultrasonic transducer with a curved vibrating membrane that is more stable and reliable in structure, and can also help the MEMS ultrasonic transducer form a variety of vibration modes, which helps to improve the bandwidth characteristics of the MEMS ultrasonic transducer.
  • the first electrode 210 includes a first sub-electrode 211, a second dielectric layer 212, and a second sub-electrode 213 arranged from bottom to top, a first AC power source 300 with a DC bias is connected between the first sub-electrode 211 and the conductive layer 100, and a second AC power source 400 is connected between the second sub-electrode 213 and the second electrode 230.
  • a DC+AC signal is applied between the first sub-electrode 211 and the conductive layer 100 to realize electrostatic force driving
  • an AC signal is applied between the second sub-electrode 213 and the second electrode 230 on both sides of the first piezoelectric layer 220 to realize piezoelectric force driving
  • the second dielectric layer 212 is provided between the two pairs of electrodes used for electrostatic force and piezoelectric force driving to block electrical influences; and the electrodes driven by piezoelectric force and electrostatic force are separated from each other and are not shared with each other, which helps to simplify circuit design and reduce signal interference caused by common electrodes.
  • the vibration membrane 200 further includes a second piezoelectric layer 240 and a third electrode 250.
  • the second piezoelectric layer 240 is disposed on a side of the second electrode 230 away from the first piezoelectric layer 220
  • the third electrode 250 is disposed on a side of the second piezoelectric layer 240 away from the second electrode 230.
  • a third AC power source 600 is connected between the second electrode 230 and the third electrode 250.
  • the vibration membrane 200 includes the first piezoelectric layer 220 and the second piezoelectric layer 240, and the single piezoelectric layer 220 is connected to the third piezoelectric layer 240.
  • applying alternating voltages to multiple piezoelectric layers simultaneously can increase the piezoelectric driving force, further increase the amplitude of the vibrating membrane 200, and obtain a MEMS ultrasonic transducer with better performance.
  • the recessed portion 101 is a curved surface structure having the same curvature as the curved portion 201.
  • the region b in the conductive layer 100 corresponding to the vertical position of the curved portion 201 of the vibration membrane 200 may also be in a curved state, that is, the recessed portion 101 is arranged opposite to the curved portion 201, so that in the entire curved surface region b, the size of the cavity 500 in the depth direction is consistent, and there is no situation where the spacing in the central region is much smaller than that in the edge region, and in the entire region b, the size of the cavity 500 in the depth direction can be relatively small, and a smaller spacing will increase the electrostatic force between the conductive layer 100 and the first electrode 210 under the same conditions, thereby obtaining a better electrostatic driving capability.
  • a portion of the cavity 500 is formed between the plane region a of the conductive layer 100 outside the recessed portion 101 and the vibrating membrane 200.
  • the size of the plane region a is as small as possible when observed from a direction parallel to the conductive layer 100, preferably less than 1/5 or even 1/10 of the width of the curved region b, so that the proportion of the curved region b can be as high as possible, so that the MEMS ultrasonic transducer driven by both electrostatics and piezoelectrics can obtain better performance.
  • the width c of the curved portion 201 of the vibrating membrane 200 when viewed from a direction parallel to the conductive layer 100, is greater than 1/40 of the depth d of the curved portion 201.
  • the width c of the curved portion 201 of the vibrating membrane 200 is greater than 1/20 of the depth d of the curved portion 201.
  • the width c of the curved portion 201 of the vibrating membrane 200 is greater than 1/10 of the depth d of the curved portion 201.
  • the conductive layer 100 has a convex portion 103 on one side close to the vibrating membrane 200, and at least a portion of the cavity 500 is formed between the vibrating membrane 200 and the convex portion 103.
  • the curved surface portion 201 of the vibrating membrane 200 is curved in a direction away from the convex portion 103.
  • the curvature of the curved surface portion 201 can be the same as the curvature of the convex portion 103, so that at least a portion of the cavity 500 can have a consistent size in the depth direction, and there is no situation where the spacing in the central area is much smaller than that in the edge area, and in this part, the spacing can be set relatively small, and a smaller spacing will increase the electrostatic force between the first electrode 210 and the conductive layer 100 under the same conditions, thereby obtaining a better electrostatic driving capability.
  • the cavity 500 is realized by a sacrificial layer process, and the vibration membrane 200 is provided with a first release channel 202 connected to the cavity 500.
  • the sacrificial layer material can be removed through the first release channel 202 located in the vibration membrane 200, thereby forming the cavity 500.
  • a sealed protective layer 700 is provided on the side of the vibration membrane 200 away from the conductive layer 100.
  • the sealed protective layer 700 can be deposited on the surface of the device under a vacuum state, thereby keeping the cavity 500 in a vacuum state.
  • the cavity 500 is realized by a sacrificial layer process, and a second release channel 102 connected to the cavity 500 is provided on the conductive layer 100.
  • the sacrificial layer material can be removed through the second release channel 102 located on the conductive layer 100, thereby forming the cavity 500.
  • the side of the conductive layer 100 away from the vibration membrane 200 can be bonded to the insulating layer 600 under vacuum conditions by bonding; or, as shown in FIG.
  • the side of the insulating layer 600 away from the conductive layer 100 can be bonded to the substrate 1000 under vacuum conditions by bonding.
  • the present application further provides an electronic device, comprising the ultrasonic transducer described in any of the above embodiments.
  • the excellent ultrasonic transmission and reception performance of the ultrasonic transducer is mainly utilized, thereby realizing high-performance electronic devices, such as ultrasonic imagers, ultrasonic radars, sonar detectors, sweeping robots, ultrasonic smoke alarms, ultrasonic flow meters, etc.
  • the structure of the ultrasonic transducer can refer to the embodiment of the first aspect of the present application, and will not be repeated here.
  • the terms "installed”, “connected” and “connected” should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; It can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Transducers For Ultrasonic Waves (AREA)

Abstract

一种超声波换能器及电子设备，涉及半导体技术领域。该超声波换能器包括：导电层(100)以及设置在所述导电层(100)上的振动膜(200)；其中，所述振动膜(200)包括自下而上层叠设置的第一电极(210)、第一压电层(220)以及第二电极(230)，所述第一电极(210)和所述导电层(100)之间连接具有直流偏置的第一交流电源(300)，所述第一电极(210)和所述第二电极(230)之间连接第二交流电源(400)；所述导电层(100)与所述振动膜(200)之间形成有空腔(500)；在所述振动膜(200)在工作状态时，从平行于所述导电层(100)的方向观察，所述振动膜(200)与所述空腔(500)相对的部分呈曲面，或者，在所述振动膜(200)在工作状态以及不在工作状态时，从平行于所述导电层(100)的方向观察，所述振动膜(200)与所述空腔(500)相对的部分均呈曲面。

Description

超声波换能器及电子设备 技术领域
本申请涉及一种半导体技术领域，具体涉及一种超声波换能器及电子设备。
背景技术
超声波换能器和传感器是产生或感测超声波能量的设备。超声波换能器在超声测距、超声成像、超声无损检测、超声指纹识别、超声流量检测、超声力学反馈等方面都有较好的应用，比如在超声成像仪、超声雷达、声呐探测、扫地机器人、超声烟雾报警器、超声流量计等具体产品和场景中都会用到。
微机电系统(Micro-Electro-Mechanical Systems，简称MEMS)是一种基于半导体工艺流程的小型化机械和机电元件(即器件和结构)开发技术，基于MEMS工艺开发的器件具有体积小、性能高、易于与电子电路系统及其他MEMS器件集成等优点，利用MEMS标准工艺可进行批量化生产和晶圆级封装，获得低成本高性能微型化器件。基于MEMS技术开发的微型超声波换能器除了能在上述超声波换能器的应用场景中发挥作用外，还可以在可穿戴设备等方面发挥效能，因此MEMS超声波换能器受到越来越多的关注。
MEMS超声波换能器的应用涉及超声信号发射及超声信号接收，其发射和接收性能是其关键指标，决定了产品的优劣。MEMS超声波换能器因其尺寸小，其超声波发射和接收性能与大型块体超声波换能器相比有一定的差距。
发明内容
为了解决现有技术中存在的上述问题的至少之一，本申请实施例提供一种超声波换能器及电子设备。
根据本申请实施例的第一方面，本申请提供一种超声波换能器，包括导电层以及设置在所述导电层上的振动膜；其中，所述振动膜包括自下而上层叠设置的第一电极、第一压电层以及第二电极，所述第一电极和所述导电层之间连接具有直流偏置的第一交流电源，所述第一电极和所述第二电极之间连接第二交流电源；所述导电层与所述振动膜之间形成有空腔；在所述振动膜在工作状态时，从平行于所述导电层的方向观察，所述 振动膜与所述空腔相对的部分呈曲面，或者，在所述振动膜在工作状态以及不在工作状态时，从平行于所述导电层的方向观察，所述振动膜与所述空腔相对的部分均呈曲面。
在一些实施例中，在所述导电层和所述振动膜之间还具有第一电介质层。
在一些实施例中，所述导电层远离所述振动膜的一侧还设置有绝缘层。
在一些实施例中，所述导电层靠近所述振动膜的一侧具有凹部，所述空腔的至少一部分形成于所述振动膜与所述凹部之间；或
所述导电层靠近所述振动膜的一侧具有凸部，所述空腔的至少一部分形成于所述振动膜与所述凸部之间。
在一些实施例中，在所述导电层靠近所述振动膜的一侧具有凹部，所述空腔的至少一部分形成于所述振动膜与所述凹部之间时，
所述振动膜的曲面部朝向所述凹部弯曲；或
所述振动膜的曲面部向远离所述凹部的方向弯曲。
在一些实施例中，所述第一电介质层设置在所述导电层靠近所述振动膜的一侧。
在一些实施例中，在所述振动膜的曲面部朝向所述凹部弯曲时，所述曲面部的顶部区域与所述第一电介质层相接触。
在一些实施例中，所述曲面部的顶部区域与所述第一电介质层固定连接。
在一些实施例中，在所述振动膜的曲面部朝向所述凹部弯曲时，所述凹部为与所述曲面部的曲度相同的曲面结构。
在一些实施例中，所述空腔的一部分形成于所述导电层在所述凹部之外的平面区域与所述振动膜之间。
在一些实施例中，从平行于所述导电层的方向观察，所述平面区域的宽度小于所述凹部的宽度的1/5。
在一些实施例中，在所述导电层靠近所述振动膜的一侧具有凸部，所述空腔的至少一部分形成于所述振动膜与所述凸部之间时，所述振动膜的曲面部向远离所述凸部的方向弯曲。
在一些实施例中，所述曲面部的曲度与所述凸部的曲度相同。
在一些实施例中，所述空腔通过牺牲层工艺实现，所述振动膜上设置有连通所述空腔的第一释放通道。
在一些实施例中，所述振动膜远离所述导电层的一侧设置有密闭保护层。
在一些实施例中，所述空腔通过牺牲层工艺实现，所述导电层上设置有连通所述空腔的第二释放通道。
在一些实施例中，所述空腔内部呈真空状态。
在一些实施例中，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/40。
在一些实施例中，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/20。
在一些实施例中，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/10。
在一些实施例中，所述第一电极包括自下而上设置的第一子电极、第二电介质层以及第二子电极。
在一些实施例中，所述第一子电极与所述导电层之间连接具有直流偏置的所述第一交流电源，所述第二子电极与所述第二电极之间连接所述第二交流电源。
在一些实施例中，所述振动膜还包括第二压电层以及第三电极，所述第二压电层设置在所述第二电极远离所述第一压电层的一侧，所述第三电极设置在所述第二压电层远离所述第二电极的一侧。
在一些实施例中，所述第二电极和所述第三电极之间连接第三交流电源。
根据本申请实施例的第二方面，本申请还提供一种电子设备，包括上述任一实施例所述的超声波换能器。
本申请提出的超声波换能器，振动膜的振动通过静电力和压电力共同驱动实现，与单一驱动形式相比，静电力和压电力共同驱动的方式所引起的振动膜的振动幅度更大，进而使得超声换能器的性能更优异；此外，振动膜并非完全的平面结构，尤其是在工作状态，曲面形式的振动膜能够使超声波换能器的性能有大幅提升。因此，本申请提出的静电力和压电力共同驱动的曲面形式超声换能器，将具有非常优异的超声波发射和接收性能。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还 可以根据这些附图获得其他的附图。在附图中：
图1至图11分别为本申请实施例提供的超声波换能器的结构示意图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
参照后文的说明和附图，详细公开了本申请的特定实施方式，指明了本申请的原理可以被采用的方式。应该理解，本申请的实施方式在范围上并不因而受到限制。在所附权利要求的精神和条款的范围内，本申请的实施方式包括许多改变、修改和等同。
针对一种实施方式描述和/或示出的特征可以以相同或类似的方式在一个或更多个其它实施方式中使用，与其它实施方式中的特征相组合，或替代其它实施方式中的特征。
应该强调，术语“包括/包含”在本文使用时指特征、整件、步骤或组件的存在，但并不排除一个或更多个其它特征、整件、步骤或组件的存在或附加。
为了解决现有技术中存在的上述问题的至少之一，第一方面，本申请提供一种超声波换能器，如图1至图11所示，本申请提供一种超声波换能器包括导电层100以及设置在导电层100上的振动膜200；其中，振动膜200包括自下而上层叠设置的第一电极210、第一压电层220以及第二电极230，第一电极210和导电层100之间连接具有直流偏置的第一交流电源300，第一电极210和第二电极230之间连接第二交流电源400；导电层100与振动膜200之间形成有空腔500；在振动膜200在工作状态时，从平行于导电层100的方向观察，振动膜200与空腔500相对的部分呈曲面，或者，在振动膜200在工作状态以及不在工作状态时，从平行于导电层100的方向观察，振动膜200与空腔500相对的部分均呈曲面。
这样，振动膜200的振动通过静电力和压电力共同驱动实现，与单一驱动形式相比，静电力和压电力共同驱动的方式所引起的振动膜200的振动幅度更大，进而使得超声换能器的性能更优异。具体来讲，静电力是指带电体之间的静电相互作用力，通过在第一电极210和导电层100之间施加具有直流偏置的交变电场(DC+AC)可以改变第一电极210和导电层100之间的相互作用力，进而引起振动膜200在一定频率下振动；压电力驱动是基于压电材料的逆压电效应，通过在第一压电层220两侧的第一电极210和 第二电极230之间施加交变电场(AC)，引起第一压电层220的变形，进而驱动振动膜200在一定频率下振动；实现了静电力和压电力共同驱动振动膜200振动，进而发射超声波。此外，振动膜200并非完全的平面结构，尤其是在工作状态，曲面形式的振动膜200能够使MEMS超声波换能器的性能有大幅提升。因此，本申请提出的静电力和压电力共同驱动的曲面形式超声换能器，将具有非常优异的超声波发射和接收性能。
在非工作状态，振动膜200可以为完全的平面结构也可以包括曲线部210，当振动膜200为完全的平面结构时，可以通过在振动膜200和导电层100之间施加直流电场，使振动膜200呈现弯曲状态。
在一些实施例中，如图1至图11所示，在导电层100和振动膜200之间还具有第一电介质层110，第一电介质层110起到绝缘作用。在另外一些实施例中，超声波换能器的导电层100和振动膜200之间可以不具有第一电介质层110，在这种情况下，可以通过合理设置导电层100以及振动膜200的形状和/或相对位置等实现导电层100和振动膜200之间的绝缘关系。
在一些实施例中，导电层空腔500内部可以呈真空状态，这样能实现更好的静电力驱动，同时减少了振动膜200振动时的阻尼，能够进一步提高振动膜200的振动性能。
在一些实施例中，如图2所示，导电层100远离振动膜200的一侧还可以设置有绝缘层600。其中，绝缘层600和导电层100可以合称为衬底，该种衬底是一种复合衬底，例如硅(Si)衬底，该复合衬底除包括导电层100和绝缘层600之外，还可以包括其他层，本申请对此不做限定。在超声波换能器具有绝缘层600时，可以将超声波换能器直接键合或粘接在基板上，绝缘层600能够对基板和导电层100之间起到绝缘作用。
在超声波换能器不具有绝缘层600时，若需将超声波换能器键合或粘接在基板上，则需要在超声波换能器和基板之间增加一绝缘层。在一些实施例中，如图1至图8以及图10、图11所示，导电层100靠近振动膜200的一侧具有凹部101，空腔500的至少一部分形成于振动膜200与凹部101之间。
在一些实施例中，如图1至图8所示，在导电层100靠近振动膜200的一侧具有凹部101，空腔500的至少一部分形成于振动膜200与凹部101之间时，振动膜200的曲面部201朝向凹部101弯曲。
在一些实施例中，如图11所示，振动膜200的曲面部201向远离凹部101的方向弯曲。具体来讲，该结构中用于施加静电作用力的第一电极210和导电层100之间的间距 较大，因为增加了间距，因此这种结构在超声波换能器的加工制造工艺上有一定的优势。
在一些实施例中，如图1至图11所示，第一电介质层110设置在导电层100靠近振动膜200的一侧。
在一些实施例中，如图1所示，振动膜200与导电层100上的第一电介质层110在器件工作和非工作状态下都不接触。
在一些实施例中，如图3所示，在振动膜200的曲面部201朝向凹部101弯曲时，曲面部201的顶部区域2011与第一电介质层110相接触。具体来讲，用于施加静电驱动力的第一电极210的中间区域(即曲面部201的顶部区域2011)与第一电介质层110相接触。静电驱动力的大小与第一电极210和导电层100之间的间距紧密相关，相同电荷作用下，第一电极210和导电层100之间的间距越小，静电作用力越大，能够获得更好的超声波发射性能。
在一些实施例中，如图4所示，振动膜200的曲面部201的顶部区域2011与第一电介质层110固定连接。具体的，振动膜200可以通过键合层111键合在第一电介质层110上。这样有助于形成结构更稳定可靠的具有曲面振动膜的MEMS超声波换能器，同时能够帮助MEMS超声波换能器形成多种振动模态，有助于改善MEMS超声波换能器的带宽特性。
在一些实施例中，如图5所示，第一电极210包括自下而上设置的第一子电极211、第二电介质层212以及第二子电极213，第一子电极211与导电层100之间连接具有直流偏置的第一交流电源300，第二子电极213与第二电极230之间连接第二交流电源400。具体来讲，在第一子电极211和导电层100之间施加DC+AC信号，实现静电力驱动，在第一压电层220两侧的第二子电极213和第二电极230之间施加AC信号，实现压电力驱动；这样，用于静电力和压电力驱动的两对电极之间具有第二电介质层212，用于阻隔电学影响；且压电力和静电力驱动的电极相互分开，互相不共用，这有助于简化电路设计，减少公用电极引起的信号干扰。
在一些实施例中，如图6所示，振动膜200还包括第二压电层240以及第三电极250，第二压电层240设置在第二电极230远离第一压电层220的一侧，第三电极250设置在第二压电层240远离第二电极230的一侧；第二电极230和第三电极250之间连接第三交流电源600。具体来讲，振动膜200包括第一压电层220和第二压电层240，与单 压电层驱动的MEMS超声波换能器相比，在多压电层上同时施加交变电压，能够增加压电驱动力，进一步提高振动膜200的振幅，获得性能更加优异的MEMS超声换能器。
在一些实施例中，如图7和图8所示，在振动膜200的曲面部201朝向凹部101弯曲时，凹部101为与曲面部201的曲度相同的曲面结构。具体来讲，导电层100中与振动膜200的曲面部201竖直方位相对应的区域b也可以呈曲面状态，也即凹部101与曲面部201相对设置，这样在整个曲面区域b，空腔500的深度方向的尺寸是一致的，不存在中心区域间距远小于边缘区域的情况，并且整个区域b内，空腔500的深度方向的尺寸可以相对较小，较小的间距会使相同条件下，导电层100和第一电极210之间的静电力提高，获得更好的静电驱动能力。
在一些实施例中，如图7和图8所示，在振动膜200的曲面部201朝向凹部101弯曲，凹部101为与曲面部201的曲度相同的曲面结构时，空腔500的一部分形成于导电层100在凹部101之外的平面区域a与振动膜200之间。具体来讲，在满足需求的情况下，从平行于导电层100的方向观察，平面区域a的尺寸越小越好，最好是曲面区域b的宽度的1/5甚至是1/10以下，这样使曲面区域b的占比能够尽可能的比较高，使得静电和压电同时驱动的MEMS超声波换能器获得更好的性能。
在一些实施例中，如图1所示，从平行于导电层100的方向观察，振动膜200的曲面部201的宽度c大于曲面部201的深度d的1/40。例如振动膜200的曲面部201的宽度c大于曲面部201的深度d的1/20，更进一步的，振动膜200的曲面部201的宽度c大于曲面部201的深度d的1/10。在一些实施例中，如图9所示，导电层100靠近振动膜200的一侧具有凸部103，空腔500的至少一部分形成于振动膜200与凸部103之间。
在一些实施例中，如图9所示，在导电层100靠近振动膜200的一侧具有凸部103，空腔500的至少一部分形成于振动膜200与凸部103之间时，振动膜200的曲面部201向远离凸部103的方向弯曲。曲面部201的曲度与凸部103的曲度可以相同，这样，空腔500的至少一部分在深度方向的尺寸可以是一致的，不存在中心区域间距远小于边缘区域的情况，并且在该部分，间距可以设置的相对较小，较小的间距会使相同条件下，第一电极210和导电层100之间的静电力提高，获得更好的静电驱动能力。
在一些实施例中，如图7所示，空腔500通过牺牲层工艺实现，振动膜200上设置有连通空腔500的第一释放通道202。具体来讲，牺牲层材料可通过位于振动膜200内的第一释放通道202移除，进而形成空腔500。
在一些实施例中，如图7所示，在空腔500通过牺牲层工艺实现，振动膜200上设置有连通空腔500的第一释放通道202时，振动膜200远离导电层100的一侧设置有密闭保护层700。为了使空腔500内保持真空状态，可在真空状态下，在器件表面沉积密闭保护层700，进而使空腔500内保持真空状态。
在一些实施例中，如图8和图9所示，空腔500通过牺牲层工艺实现，导电层100上设置有连通空腔500的第二释放通道102。牺牲层材料可通过位于导电层100上的第二释放通道102移除，进而形成空腔500。为了使空腔500内保持真空状态，可在真空条件下，通过键合的方式，将导电层100远离振动膜200的一侧键合到绝缘层600上；或者，如图10所示，在第二释放通道102同时贯穿导电层100和绝缘层600时，为了使空腔500内保持真空状态，可在真空条件下，通过键合的方式，将绝缘层600远离导电层100的一侧键合到基板1000上。
根据本申请实施例的第二方面，本申请还提供一种电子设备，包括上述任一实施例所述的超声波换能器。
在该电子设备结构中主要利用所述超声波换能器优异的超声波发射和接收性能，进而能够实现高性能的电子设备，例如超声成像仪、超声雷达、声呐探测器、扫地机器人、超声烟雾报警器、超声流量计等。所述超声波换能器的结构可以参照本申请第一方面的实施例，在此不再赘述。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接； 可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。、在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本说明书实施例的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
本申请中应用了具体实施例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (25)

  1. 一种超声波换能器，其特征在于，包括导电层以及设置在所述导电层上的振动膜；其中，
    所述振动膜包括自下而上层叠设置的第一电极、第一压电层以及第二电极，所述第一电极和所述导电层之间连接具有直流偏置的第一交流电源，所述第一电极和所述第二电极之间连接第二交流电源；
    所述导电层与所述振动膜之间形成有空腔；在所述振动膜在工作状态时，从平行于所述导电层的方向观察，所述振动膜与所述空腔相对的部分呈曲面，或者，在所述振动膜在工作状态以及不在工作状态时，从平行于所述导电层的方向观察，所述振动膜与所述空腔相对的部分均呈曲面。
  2. 根据权利要求1所述的超声波换能器，其特征在于，在所述导电层和所述振动膜之间还具有第一电介质层。
  3. 根据权利要求1所述的超声波换能器，其特征在于，所述导电层远离所述振动膜的一侧还设置有绝缘层。
  4. 根据权利要求1所述的超声波换能器，其特征在于，所述导电层靠近所述振动膜的一侧具有凹部，所述空腔的至少一部分形成于所述振动膜与所述凹部之间；或
    所述导电层靠近所述振动膜的一侧具有凸部，所述空腔的至少一部分形成于所述振动膜与所述凸部之间。
  5. 根据权利要求4所述的超声波换能器，其特征在于，在所述导电层靠近所述振动膜的一侧具有凹部，所述空腔的至少一部分形成于所述振动膜与所述凹部之间时，
    所述振动膜的曲面部朝向所述凹部弯曲；或
    所述振动膜的曲面部向远离所述凹部的方向弯曲。
  6. 根据权利要求5所述的超声波换能器，其特征在于，所述第一电介质层设置在所述导电层靠近所述振动膜的一侧。
  7. 根据权利要求6所述的超声波换能器，其特征在于，在所述振动膜的曲面部朝向所述凹部弯曲时，所述曲面部的顶部区域与所述第一电介质层相接触。
  8. 根据权利要求7所述的超声波换能器，其特征在于，所述曲面部的顶部区域与所述第一电介质层固定连接。
  9. 根据权利要求6所述的超声波换能器，其特征在于，在所述振动膜的曲面部朝向所述凹部弯曲时，所述凹部为与所述曲面部的曲度相同的曲面结构。
  10. 根据权利要求9所述的超声波换能器，其特征在于，所述空腔的一部分形成于所述导电层在所述凹部之外的平面区域与所述振动膜之间。
  11. 根据权利要求10所述的超声波换能器，其特征在于，从平行于所述导电层的方向观察，所述平面区域的宽度小于所述凹部的宽度的1/5。
  12. 根据权利要求4所述的超声波换能器，其特征在于，在所述导电层靠近所述振动膜的一侧具有凸部，所述空腔的至少一部分形成于所述振动膜与所述凸部之间时，所述振动膜的曲面部向远离所述凸部的方向弯曲。
  13. 根据权利要求12所述的超声波换能器，其特征在于，所述曲面部的曲度与所述凸部的曲度相同。
  14. 根据权利要求9或13所述的超声波换能器，其特征在于，所述空腔通过牺牲层工艺实现，所述振动膜上设置有连通所述空腔的第一释放通道。
  15. 根据权利要求14所述的超声波换能器，其特征在于，所述振动膜远离所述导电层的一侧设置有密闭保护层。
  16. 根据权利要求9或13所述的超声波换能器，其特征在于，所述空腔通过牺牲层工艺实现，所述导电层上设置有连通所述空腔的第二释放通道。
  17. 根据权利要求1至13任一项所述的超声波换能器，其特征在于，所述空腔内部呈真空状态。
  18. 根据权利要求1至13任一项所述的超声波换能器，其特征在于，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/40。
  19. 根据权利要求18所述的超声波换能器，其特征在于，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/20。
  20. 根据权利要求19所述的超声波换能器，其特征在于，从平行于所述导电层的方向观察，所述振动膜的曲面部的宽度大于所述曲面部的深度的1/10。
  21. 根据权利要求1至13任一项所述的超声波换能器，其特征在于，所述第一电极包括自下而上设置的第一子电极、第二电介质层以及第二子电极。
  22. 根据权利要求21所述的超声波换能器，其特征在于，所述第一子电极与所述导电层之间连接具有直流偏置的所述第一交流电源，所述第二子电极与所述第二电极之间连接所述第二交流电源。
  23. 根据权利要求1至13任一项所述的超声波换能器，其特征在于，所述振动膜还包括第二压电层以及第三电极，所述第二压电层设置在所述第二电极远离所述第一压电层的一侧，所述第三电极设置在所述第二压电层远离所述第二电极的一侧。
  24. 根据权利要求23所述的超声波换能器，其特征在于，所述第二电极和所述第三电极之间连接第三交流电源。
  25. 一种电子设备，其特征在于，包括上述权利要求1至24任一项所述的超声波换能器。
PCT/CN2024/071513 2023-01-12 2024-01-10 超声波换能器及电子设备 Ceased WO2024149281A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202310041799.8A CN118321130A (zh) 2023-01-12 2023-01-12 超声波换能器及电子设备
CN202310041799.8 2023-01-12

Publications (1)

Publication Number Publication Date
WO2024149281A1 true WO2024149281A1 (zh) 2024-07-18

Family

ID=91770824

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2024/071513 Ceased WO2024149281A1 (zh) 2023-01-12 2024-01-10 超声波换能器及电子设备

Country Status (2)

Country Link
CN (1) CN118321130A (zh)
WO (1) WO2024149281A1 (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101238754A (zh) * 2005-10-18 2008-08-06 株式会社日立制作所 超声波换能器、超声波探头以及超声波摄像装置
US20110095645A1 (en) * 2007-09-25 2011-04-28 Canon Kabushiki Kaisha Electromechanical transducer and manufacturing method therefor
JP2012095112A (ja) * 2010-10-27 2012-05-17 Olympus Corp 超音波発生ユニット
CN107520110A (zh) * 2017-07-31 2017-12-29 瑞声科技(新加坡)有限公司 压电超声换能器及其制备方法
CN110508474A (zh) * 2019-07-31 2019-11-29 西安交通大学 一种混合驱动mut单元结构及其参数化激励方法
CN110523607A (zh) * 2019-07-31 2019-12-03 西安交通大学 一种压电发射电容感知高性能mut单元及其制备方法
US20200374636A1 (en) * 2018-12-23 2020-11-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Wide-passband capacitive vibrating-memrane ultrasonic transducer
CN115055356A (zh) * 2022-06-10 2022-09-16 复旦大学 一种具有环状压电层的微机械超声换能器

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101238754A (zh) * 2005-10-18 2008-08-06 株式会社日立制作所 超声波换能器、超声波探头以及超声波摄像装置
US20110095645A1 (en) * 2007-09-25 2011-04-28 Canon Kabushiki Kaisha Electromechanical transducer and manufacturing method therefor
JP2012095112A (ja) * 2010-10-27 2012-05-17 Olympus Corp 超音波発生ユニット
CN107520110A (zh) * 2017-07-31 2017-12-29 瑞声科技(新加坡)有限公司 压电超声换能器及其制备方法
US20200374636A1 (en) * 2018-12-23 2020-11-26 Commissariat A L'energie Atomique Et Aux Energies Alternatives Wide-passband capacitive vibrating-memrane ultrasonic transducer
CN110508474A (zh) * 2019-07-31 2019-11-29 西安交通大学 一种混合驱动mut单元结构及其参数化激励方法
CN110523607A (zh) * 2019-07-31 2019-12-03 西安交通大学 一种压电发射电容感知高性能mut单元及其制备方法
CN115055356A (zh) * 2022-06-10 2022-09-16 复旦大学 一种具有环状压电层的微机械超声换能器

Also Published As

Publication number Publication date
CN118321130A (zh) 2024-07-12

Similar Documents

Publication Publication Date Title
US11905164B2 (en) Micro-electro-mechanical system acoustic sensor, micro-electro-mechanical system package structure and method for manufacturing the same
US8509462B2 (en) Piezoelectric micro speaker including annular ring-shaped vibrating membranes and method of manufacturing the piezoelectric micro speaker
US20230011561A1 (en) Piezoelectric microphone with enhanced anchor
US20210236090A1 (en) Imaging devices having piezoelectric transducers
JP4288388B2 (ja) 圧電トランスデューサ
CN101754077B (zh) 压电声换能器及其制造方法
KR101520070B1 (ko) 압전형 마이크로 스피커 및 그 제조 방법
US20220182767A1 (en) High-sensitivity piezoelectric microphone
US11905169B2 (en) Acoustic transduction unit, manufacturing method thereof and acoustic transducer
US9135906B2 (en) Ultrasonic generator
CN111050256A (zh) 一种小型化的高灵敏度压电式麦克风
KR101761819B1 (ko) 초음파 변환기 및 그 제조 방법
US12302063B2 (en) Acoustic device with connected cantilever
US20220040735A1 (en) Dual layer ultrasonic transducer fabrication process
US20090136064A1 (en) Vibration transducer and manufacturing method therefor
CN114697835A (zh) 一种压电扬声器
JP2008252847A (ja) 静電型トランスデューサ
WO2019058978A1 (ja) 圧電トランスデューサ及び圧電モジュール
WO2024149281A1 (zh) 超声波换能器及电子设备
JP2008252854A (ja) 静電型トランスデューサおよびその製造方法
CN216626050U (zh) 附加压电元件的麦克风
WO2014103334A1 (ja) 超音波振動子セル、超音波プローブ、及び超音波振動子セルの制御方法
JP2011182298A (ja) Ｍｅｍｓトランスデューサおよび超音波パラメトリックアレイスピーカー。
US20220280971A1 (en) Ultrasound transducer manufacturing method
CN223698376U (zh) 一种mems超声换能器

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 24741278

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 24741278

Country of ref document: EP

Kind code of ref document: A1