WO2024129659A1 - Puce rvb basée sur une jonction tunnel avec régions actives isolées - Google Patents

Puce rvb basée sur une jonction tunnel avec régions actives isolées Download PDF

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Publication number
WO2024129659A1
WO2024129659A1 PCT/US2023/083518 US2023083518W WO2024129659A1 WO 2024129659 A1 WO2024129659 A1 WO 2024129659A1 US 2023083518 W US2023083518 W US 2023083518W WO 2024129659 A1 WO2024129659 A1 WO 2024129659A1
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mesa
active region
thickness
plated metal
pixel
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PCT/US2023/083518
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English (en)
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Toni Lopez
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Lumileds Llc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Definitions

  • Embodiments of the disclosure generally relate to arrays of light emitting diode (LED) devices and methods of manufacturing the same. More particularly, embodiments are directed to monolithic arrays of red, green, blue (RGB) LED pixels on an epi wafer that are later transferred and hybridized to a backplane to control individual pixels. Three-color InGaN based epi is realized with a stack of multiple quantum wells by way of tunnel junctions. BACKGROUND [0002]
  • a light emitting diode (LED) is a semiconductor light source that emits visible light when current flows through it.
  • LEDs combine a P-type semiconductor with an N-type semiconductor. LEDs commonly use a III-V group compound semiconductor.
  • a III-V group compound semiconductor provides stable operation at a higher temperature than devices that use other semiconductors.
  • the III-V group compound is typically formed on a substrate formed of sapphire aluminum oxide (Al 2 O 3 ) or silicon carbide (SiC).
  • Al 2 O 3 sapphire aluminum oxide
  • SiC silicon carbide
  • MicroLEDs typically have dimensions of about 50 ⁇ m in diameter or width and smaller that are used to in the manufacture of color displays by aligning in close proximity microLEDs comprising red, blue and green wavelengths.
  • uLEDs typically have dimensions of about 50 ⁇ m in diameter or width and smaller that are used to in the manufacture of color displays by aligning in close proximity microLEDs comprising red, blue and green wavelengths.
  • two approaches have been utilized to assemble displays constructed from individual microLED dies. The first is a pick- and-place approach includes: picking up, aligning, and then attaching each individual blue, green and red wavelength microLED onto a backplane, followed by electrically connecting the backplane to a driver integrated circuit. Due to the small size of each microLED, this assembly sequence is slow and subject to manufacturing errors.
  • the die size decreases to satisfy increasing resolution requirements of displays, larger and larger numbers of die must be transferred at each pick and place operation to populate a display of required dimensions.
  • a second approach is bonding a group of LEDs, e.g., a monolithic die or array or matrix, to a backplane, which eliminates the handling of individual LEDs associated with pick-and-place.
  • Docket No.2022P00047WO01 PATENT [0004]
  • Visualization systems such as virtual reality systems and augmented reality systems, are becoming increasingly more common in the fields such as entertainment, education, medicine, and business. There is ongoing effort to improve visualization systems, such as virtual reality systems and augmented reality systems.
  • Inorganic light emitting diodes have been widely used to create different types of displays, LED matrices, and light engines, including automotive adaptive headlights, augmented-, virtual-, mix-reality (AR/VR/MR) headsets, smart glasses, and displays for mobile phones, smart watches, monitors, and televisions.
  • the individual LED pixels in these architectures may have an area of a few square millimeters down to a few square micrometers, depending upon the matrix or display size and its pixel per inch requirements.
  • One common approach is to create a monolithic array of LED pixels on an EPI wafer and later transfer and hybridize these LED arrays to a backplane to control individual pixels.
  • Micro-LEDs may be small size LEDs (typically ⁇ 50 ⁇ m in diameter or smaller) that can be used to produce very high-resolution color displays when ⁇ LEDs of red, green, and blue wavelengths may be aligned in close proximity.
  • Manufacture of an ⁇ LED display typically involves picking singulated ⁇ LEDs from separate blue, green and red WL wafers and aligning them in alternating close proximity on the display.
  • LED light emitting diode
  • a light emitting diode (LED) die comprises: a first mesa defining a red pixel, the first mesa comprising semiconductor layers, three active regions, two tunnel junctions, a transparent conductive oxide layer, and a first plated metal; a second mesa adjacent the first mesa, the second mesa defining a green pixel and comprising semiconductor layers, two active regions, two tunnel junctions, and a second plated metal; a third mesa adjacent the second mesa, the third mesa defining a blue pixel and comprising semiconductor layers, one active region, one tunnel junction, and a third plated metal; and a n-contact extending along sidewalls of each of the first mesa, the second mesa, and the third mesa.
  • a method of manufacturing an LED array comprises: depositing a plurality of semiconductor layers including an N-type layer, an active region, and a P-type layer on a substrate; etching a portion of the semiconductor layers to form trenches and a first mesa, a second mesa, and a third mesa, wherein: the first mesa defines a red pixel, the first mesa comprising semiconductor layers, three active regions, two tunnel junctions, a transparent conductive oxide layer, and a first plated metal plug; the second mesa adjacent the first mesa, the second mesa defines a green pixel and comprising semiconductor layers, two active regions, two tunnel junctions, and a second plated metal plug; the third mesa adjacent the second mesa, the third mesa defines a blue pixel and comprising semiconductor
  • FIG. 1A illustrates a process flow diagram of a method of manufacturing an LED array according to one or more embodiments
  • FIG. 1B illustrates a process flow diagram of a method of manufacturing an LED array according to one or more embodiments
  • FIG. 2 illustrates a cross-section schematic of an epitaxy configuration according to one or more embodiments
  • FIG. 3 illustrates a matrix arrangement of the three-color RGB pixels according to one or more embodiments
  • FIG. 4 illustrates a block diagram of an example of a visualization system using the ⁇ LED array of one or more embodiments.
  • identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. The figures are not drawn to scale.
  • substrate refers to a structure, intermediate or final, having a surface, or portion of a surface, upon which a process acts.
  • reference to a substrate in some embodiments also refers to only a portion of the substrate, unless the context clearly indicates otherwise.
  • reference to depositing on a substrate includes depositing on a bare substrate or on a substrate with one or more layers, films, features, or materials deposited or formed thereon.
  • the "substrate” means any substrate or material surface formed on a substrate upon which film processing is performed during a fabrication process.
  • a substrate surface on which processing is performed includes materials such as silicon, silicon oxide, silicon on insulator (SOI), strained silicon, amorphous silicon, doped silicon, carbon doped silicon oxides, germanium, gallium arsenide, glass, sapphire, and any other suitable materials such as metals, metal nitrides, III-nitrides (e.g., GaN, AlN, InN, and other alloys), metal alloys, and other conductive materials, depending on the application.
  • Substrates include, without limitation, light emitting diode (LED) devices.
  • Substrates in some embodiments are exposed to a pretreatment process to polish, etch, reduce, oxidize, hydroxylate, anneal, UV cure, e-beam cure and/or bake the substrate surface.
  • any of the film processing steps disclosed is also performed on an underlayer formed on the Docket No.2022P00047WO01 PATENT substrate, and the term "substrate surface" is intended to include such underlayer as the context indicates.
  • the exposed surface of the newly deposited film/layer becomes the substrate surface.
  • a wafer serves as the substrate for the formation of the LED devices described herein.
  • Reference to a micro-LED means a light emitting diode having one or more characteristic dimensions (e.g., height, width, depth, thickness, etc. dimensions) of less than 100 micrometers. In one or embodiments, one or more dimensions of height, width, depth, thickness have values in a range of 2 to 25 micrometers.
  • LED light emitting diode
  • LEDs Semiconductor light emitting devices or optical power emitting devices, such as devices that emit ultraviolet (UV) or infrared (IR) optical power, are among the most efficient light sources currently available. These devices may include light emitting diodes, resonant cavity light emitting diodes, vertical cavity laser diodes, edge emitting lasers, or the like (hereinafter referred to as "LEDs").
  • LEDs may be attractive candidates for many different applications.
  • they may be used as light sources (e.g., flashlights and camera flashes) for hand-held battery- powered devices, such as cameras and cell phones. They may also be used, for example, for automotive lighting, heads up display (HUD) lighting, horticultural lighting, street lighting, torch for video, general illumination (e.g., home, shop, office and studio lighting, theater/stage lighting and architectural lighting), augmented reality (AR) lighting, virtual reality (VR) lighting, as back lights for displays, and IR spectroscopy.
  • HUD heads up display
  • AR augmented reality
  • VR virtual reality
  • a single LED may provide light that is less bright than an incandescent light source, and, therefore, multi-junction devices or arrays Docket No.2022P00047WO01 PATENT of LEDs (such as monolithic LED arrays, micro-LED arrays, etc.) may be used for applications where more brightness is desired or required.
  • the present disclosure generally relates to the manufacture of micro light emitting diode ( ⁇ LED) displays and of multi-wavelength light emitters with large bandwidth for free- space visible light communications. Epitaxial tunnel junctions may be used to combine multiple emission wavelengths within a single LED device.
  • the present disclosure generally relates to the manufacture of LEDs and arrays for augmented reality (AR) lighting.
  • AR augmented reality
  • Manufacturing ⁇ LEDs could be simplified if two or more active regions emitting different wavelengths may be integrated within a single wafer. Such an approach may be possible within the AlInGaN materials system since it has been demonstrated that blue, green, and red LEDs can be all made in this system.
  • use of a multi-color chip in a ⁇ LED display requires not only stacking multiple layers able to emit at different wavelengths within a single epitaxial growth run, but also requires an ability to change respective emission intensity ratios between the emitters of different wavelengths.
  • a three-color (red-green-blue) indium gallium nitride (InGaN) based epitaxial die is made with a stack of multiple quantum wells and tunnel junctions.
  • the complexity of each individual RGB pixel group is reduced in terms of interconnect electrodes, color control, and driving schemes ultimately improving performance and manufacturing feasibility.
  • FIG. 1A illustrates a process flow diagram for a method 50 on manufacturing an LED device according to one or more embodiments.
  • FIG.1A illustrates a process flow diagram for a method 50 on manufacturing an LED device according to one or more embodiments.
  • FIG. 2 is a cross-section view of a ⁇ LED 100 according to one or more embodiments.
  • the ⁇ LED array of one or more embodiments advantageously requires three plated metals and one common cathode per red-green-blue (RGB) pixel group. Additionally, the Docket No.2022P00047WO01 PATENT ⁇ LED array of one or more embodiments allows for better control of emission color than in known RGB technologies.
  • ⁇ LED arrays of one or more embodiments are capable of lower display power consumption than published RGB technologies.
  • a red pixel, a green pixel, and a blue pixel are grown sequentially on the same epitaxial wafer.
  • Each pixel contains at least one active region and at least one tunnel junction
  • Each active region emits light of different wavelength than the other active region(s).
  • the epitaxy includes at least one tunnel junction to avoid the need for contacts to etched p-GaN layers.
  • the wafer is etched into multi-level mesas creating connected to multi-level plated metals. All of the junctions share a common cathode.
  • the method 10 comprises at operation 12 fabrication of a substrate.
  • Substrate fabrication can include depositing a plurality of semiconductor layers including, but not limited to an N-type layer, an active region, and a P-type layer on a substrate. Once the semiconductor layers are deposited on the substrate, a portion of the semiconductor layers are etched to form trenches and a plurality of spaces mesas.
  • a die is fabricated.
  • Die fabrication includes depositing a (first) dielectric material to insulate sidewalls of the epitaxial layers (e.g., N-type layer, active region, and P-type layer), which is followed by deposition of an electrode metal in the trenches, e.g., spaces between each of the plurality of spaced mesas.
  • the die fabrication further includes depositing a P-contact layer and a hard mask, forming a current spreading film, plating a p-metal material plug, followed by under bump metallization (UBM).
  • UBM under bump metallization
  • optional microbumping may occur on a complementary metal oxide semiconductor (CMOS) backplane.
  • CMOS complementary metal oxide semiconductor
  • the method 20 comprises at 22 depositing a plurality of semiconductor layers including an N-type layer, an active region, and a P-type layer on a substrate.
  • the method further comprises etching a portion of the semiconductor layers to form trenches and a plurality of spaced mesas defining pixels, each of the plurality of spaced mesas comprising the semiconductor layers and each of the spaced mesas having a height less than or equal to their width.
  • the method comprises Docket No.2022P00047WO01 PATENT depositing a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal.
  • the method comprises depositing an electrode metal in a space between each of the plurality of spaced mesas, the metal providing optical isolation between each of the spaced mesas, and electrically contacting the N-type layer of each of the spaced mesas along sidewalls of the N-type layers.
  • each of the plurality of spaced mesas comprising a conductive p-contact layer extending across a portion of each of the plurality of mesas and including an edge
  • the space between each of the plurality of spaced mesas results in a pixel pitch in a range of from 1 ⁇ m to 100 ⁇ m and dark space gap between adjacent edges of the p-contact layer of less than 20% of the pixel pitch.
  • the pixel pitches are in a range of from 5 ⁇ m to 100 ⁇ m, 10 ⁇ m to 100 ⁇ m or 15 ⁇ m to 100 ⁇ m.
  • the dark space gap is in a range of from 10 ⁇ m to 0.5 ⁇ m, or in a range of from 10 ⁇ m to 4 ⁇ m, for example, in a range of 8 ⁇ m to 4 ⁇ m.
  • the term "dark space gap" refers to the space between adjacent edges of the p-contact layer where no light is reflected.
  • the method comprises forming an array of spaced mesas.
  • the metal comprises a reflective metal.
  • the dark space gap is in a range of from to 10 ⁇ m to 0.5 ⁇ m or in a range of from 10 ⁇ m to 4 ⁇ m.
  • FIG. 2 is a cross-sectional view of a tunnel junction based RGB die 100 with isolated active regions.
  • the RGB die 100 has three pixel stacks 102a, 102b, 102c of varying heights.
  • Each pixel stack 102a, 102b, 102c includes semiconductor layers 104, active regions 106, and tunnel junctions 114 deposited on a substrate (not illustrated) during a step in the manufacture of an LED device according to one or more embodiments.
  • each pixel stack 102a, 102b, and 102c comprises at least one active region 106, which may also be known as a blue active region because of its ability to emit blue light.
  • Semiconductor layers 104 are grown on a substrate.
  • the semiconductor layers 104 comprise epitaxial layers, III-nitride layers, or epitaxial III-nitride layers.
  • each pixel stack 102a, 102b, 102c has a size in a range of from 1 ⁇ m to 10 ⁇ m, including a range of from 1 ⁇ m to 8 ⁇ m, and a range of from 1 ⁇ m to 7 ⁇ m.
  • Docket No.2022P00047WO01 PATENT [0038]
  • the substrate may be any substrate known to one of skill in the art.
  • the substrate comprises one or more of sapphire, silicon carbide, silicon (Si), quartz, magnesium oxide (MgO), zinc oxide (ZnO), spinel, and the like.
  • the substrate is not patterned prior to the growth of the epitaxial layer(s).
  • the substrate is not patterned and can be considered to be flat or substantially flat.
  • the substrate is patterned, e.g., patterned sapphire substrate (PSS).
  • the semiconductor layers 104 comprise a III-nitride material, and in specific embodiments epitaxial III-nitride material.
  • the III-nitride material comprises one or more of gallium (Ga), aluminum (Al), and indium (In).
  • the semiconductor layers 104 comprises one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), aluminum indium gallium nitride (AlInGaN) and the like.
  • the semiconductor layers 104 comprises a p-type layer 104p, at least one an active region 106, and an n-type layer 104n.
  • the semiconductor layers 104 comprise a III-nitride material, and in specific embodiments epitaxial III-nitride material.
  • the III-nitride material comprises one or more of gallium (Ga), aluminum (Al), and indium (In).
  • the semiconductor layers 104 comprise one or more of gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), indium aluminum nitride (InAlN), aluminum indium gallium nitride (AlInGaN) and the like.
  • the semiconductor layers 104 comprises a p-type layer 104p, at least one active region 106, and an n-type layer 104n.
  • the substrate is placed in a metalorganic vapor-phase epitaxy (MOVPE) reactor for epitaxy of LED device layers to grow the semiconductor layers.
  • MOVPE metalorganic vapor-phase epitaxy
  • the semiconductor layers 104 comprise a stack of undoped III-nitride material and doped III-nitride material.
  • the III-nitride materials may be doped with one or more of silicon (Si), oxygen (O), boron (B), phosphorus (P), germanium (Ge), manganese (Mn), or magnesium (Mg) depending upon whether p-type or n-type III- nitride material is needed.
  • the semiconductor layers 104 comprise an n-type layer 104n, an active region 106 and a p-type layer 104p.
  • the semiconductor layers 104 have a combined thickness in a range of from about 2 ⁇ m to about 10 ⁇ m, including a range of from about 2 ⁇ m to about 9 ⁇ m, 2 ⁇ m to about 8 ⁇ m, 2 ⁇ m to about 7 ⁇ m, 2 ⁇ m to about 6 ⁇ m, 2 ⁇ m to about 5 ⁇ m, 2 ⁇ m to about 4 ⁇ m, 2 ⁇ m to about 3 ⁇ m, 3 ⁇ m to about 10 ⁇ m, 3 ⁇ m to about 9 ⁇ m, 3 ⁇ m to about 8 ⁇ m, 3 ⁇ m to about 7 ⁇ m, 3 ⁇ m to about 6 ⁇ m, 3 ⁇ m to about 5 ⁇ m, 3 ⁇ m to about 4 ⁇ m, 4 ⁇ m to about 10 ⁇ m, 4 ⁇ m to about 9 ⁇ m, 4 ⁇ m to about 8 ⁇ m, 4 ⁇ m to about 7
  • each pixel stack 102a, 102b, 102c includes a first active region 106a, or a blue active region, formed between the first n-type layer 104n and the first p-type layer 104p.
  • the first active region 106a may comprise any appropriate materials known to one of skill in the art.
  • the active region 106 is comprised of a III-nitride material multiple quantum wells (MQW), and a III-nitride electron blocking layer.
  • the first pixel stack 102a includes a second active region 106b and a third active region 106c.
  • the second active region 106b is also known as a green active region because it emits green light.
  • the third active region 106c is known as a red active region because it emits red light.
  • the first pixel stack 102a is a red pixel.
  • the first pixel stack 102a includes a first tunnel junction 114a, and a second tunnel junction 114b.
  • a tunnel junction is a structure that allows electrons to tunnel from the valence band of a p-type layer to the conduction band of an n-type layer in reverse bias.
  • the location where a p-type layer and an n-type layer abut each other is called a p/n junction.
  • a hole is left behind in the p-type layer, such that carriers are generated in both regions. Accordingly, in an electronic device like a diode, where only a small leakage current flows in reverse bias, a large current can be carried in reverse bias across a tunnel junction.
  • a tunnel junction comprises a particular alignment of the conduction and valence bands at the p/n tunnel junction.
  • the first tunnel junction 114a is located between the first p-type layer 104p and the second n-type layer 204n.
  • the second tunnel junction 114b is located between the second p- type layer 204p and the third n-type layer 304n.
  • the second pixel stack 102b includes a first active region 106a, or a blue active region, formed between the first n-type layer 104n and the first p- type layer 104p.
  • the first active region 106a may comprise any appropriate materials known to one of skill in the art.
  • the active region 106 is comprised of a III-nitride material multiple quantum wells (MQW), and a III-nitride electron blocking layer.
  • the second pixel stack 102b includes a second active region 106b.
  • the second active region 106b is also known as a green active region because it emits green light.
  • the second pixel stack 102b because the second pixel stack 102b includes a first active region 106 and a second active region 106b, the second pixel stack 102b is a green pixel. Without intending to be bound be theory, it is thought that because there is no third active region 106c, there is no red active region to absorb green photons. Thus, the second pixel stack 102b is a green pixel.
  • the third pixel stack 102c includes a first tunnel junction 114a. The first tunnel junction 114a is located between the first active region 106 and the first p-type layer 104p.
  • the third pixel stack 102c is a blue pixel.
  • the third pixel stack 102c includes a first tunnel junction 114a.
  • the first tunnel junction 114a is located between the first p-type layer 104p and the second n-type layer 204n.
  • the LED 100 is a red-green-blue (RGB) LED.
  • the first pixel stack 102a includes a current spreading layer 124 on the third n-type layer 304n before the third p-type layer 304p.
  • the current spreading layer 124 comprises a transparent material. The current spreading layer 124 is separate from a reflecting layer. In this way, the function of current spreading is achieved in a different layer from the function of reflection.
  • the current spreading layer 124 comprises indium tin oxide (ITO) or other suitable conducting, transparent materials, e.g., transparent conductive oxides (TCO), such as indium zinc oxide (IZO), the current spreading layer 124 having a thickness in a range of from 5 nm to 100 nm.
  • ITO indium tin oxide
  • TCO transparent conductive oxides
  • IZO indium zinc oxide
  • the current spreading layer 124 having a thickness in a range of from 5 nm to 100 nm.
  • a first dielectric layer 118 is deposited on the third p-type layer 304p.
  • the first dielectric layer 118 is deposited on the third n-type layer 305n.
  • the first dielectric layer 118 is deposited on the second n-type layer 204n.
  • the first dielectric layer 118 may be deposited by any appropriate technique known to the skilled artisan.
  • the first dielectric layer 118 is deposited by one or more of sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced atomic layer deposition (PEALD), and plasma enhanced chemical vapor deposition (PECVD).
  • Sputter deposition refers to a physical vapor deposition (PVD) method of thin film deposition by sputtering.
  • PVD physical vapor deposition
  • a material e.g., a metal
  • the technique is based on ion bombardment of a source material, the target. Ion bombardment results in a vapor due to a purely physical process, i.e., the sputtering of the target material.
  • atomic layer deposition ALD
  • cyclical deposition refers to a vapor phase technique used to deposit thin films on a substrate surface.
  • the process of ALD involves the surface of a substrate, or a portion of substrate, being exposed to alternating precursors, i.e., two or more reactive compounds, to deposit a layer of material on the substrate surface.
  • alternating precursors i.e., two or more reactive compounds
  • the precursors are introduced sequentially or simultaneously.
  • the precursors are introduced into a reaction zone of a processing chamber, and the substrate, or portion of the substrate, is exposed separately to the precursors.
  • “chemical vapor deposition (CVD)” refers to a process in which films of materials are deposited from the vapor phase by Docket No.2022P00047WO01 PATENT decomposition of chemicals on a substrate surface.
  • PEALD plasma enhanced atomic layer deposition
  • a material may be formed from the same chemical precursors, but at a higher deposition rate and a lower temperature.
  • a PEALD process in general, a reactant gas and a reactant plasma are sequentially introduced into a process chamber having a substrate in the chamber.
  • the first reactant gas is pulsed in the process chamber and is adsorbed onto the substrate surface. Thereafter, the reactant plasma is pulsed into the process chamber and reacts with the first reactant gas to form a deposition material, e.g., a thin film on a substrate. Similar to a thermal ALD process, a purge step maybe conducted between the delivery of each of the reactants.
  • PECVD plasma enhanced chemical vapor deposition
  • a source material which is in gas or liquid phase, such as a gas-phase III- nitride material or a vapor of a liquid-phase III-nitride material that have been entrained in a carrier gas, is introduced into a PECVD chamber.
  • a plasma-initiated gas is also introduced into the chamber.
  • the creation of plasma in the chamber creates excited radicals.
  • the excited radicals are chemically bound to the surface of a substrate positioned in the chamber, forming the desired film thereon.
  • the first dielectric layer 118 may be fabricated using materials and patterning techniques which are known in the art.
  • the first dielectric layer 118 comprises a dielectric material.
  • Suitable dielectric materials include, but are not limited to, silicon oxide (SiO), silicon nitride (SiN), silicon carbide (SiC), aluminum oxide (AlOx), aluminum nitride (AlN) and combinations thereof.
  • SiO silicon oxide
  • SiN silicon nitride
  • SiC silicon carbide
  • AlOx aluminum oxide
  • AlN aluminum nitride
  • the term "dielectric” refers to an electrical insulator material that can be polarized by an applied electric field.
  • the first dielectric Docket No.2022P00047WO01 PATENT layer 118 includes, but is not limited to, oxides, e.g., silicon oxide (SiO 2 ), aluminum oxide (Al2O3), nitrides, e.g., silicon nitride (Si3N4). In other embodiments, the first dielectric layer 118 comprises silicon oxide (SiO 2 ). In some embodiments, the first dielectric layer 118 composition is non-stoichiometric relative to the ideal molecular formula.
  • the dielectric layer includes, but is not limited to, oxides (e.g., silicon oxide, aluminum oxide), nitrides (e.g., silicon nitride (SiN)), oxycarbides (e.g., silicon oxycarbide (SiOC)), and oxynitrocarbides (e.g., silicon oxycarbonitride (SiNCO)).
  • oxides e.g., silicon oxide, aluminum oxide
  • nitrides e.g., silicon nitride (SiN)
  • oxycarbides e.g., silicon oxycarbide (SiOC)
  • SiNCO silicon oxycarbonitride
  • the first dielectric layer 118 may be a distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • a “distributed Bragg reflector” refers to a structure (e.g., a mirror) formed from a multilayer stack of alternating thin film materials with varying refractive index, for example high-index and low-index films.
  • the first dielectric layer 118 has a thickness in a range of from about 200 nm to about 1 ⁇ m, for example, about 300 nm to about 1 ⁇ m, about 400 nm to about 1 ⁇ m, about 500 nm to about 1 ⁇ m, about 600 nm to about 1 ⁇ m, about 700 nm to about 1 ⁇ m, about 800 nm to about 1 ⁇ m, about 500 nm to about 1 ⁇ m, about 200 nm to about 900 nm, 300 nm to about 900 nm, about 400 nm to about 900 nm, about 500 nm to about 900 nm, about 600 nm to about 900 nm, about 700 nm to about 900 nm, about 800 nm to about 900 nm, about 200 nm to about 800 nm, 300 nm to about 800 nm, about 400 nm to about 800 nm, about 500 nm to about 1 ⁇ m, about
  • the first dielectric layer 118 of the first pixel stack 102a extends to the third active region 106c.
  • the inner first dielectric layer 118 of the second pixel stack 102b extends to the second active region 106b.
  • the inner first dielectric layer 118 of the third pixel stack 102c extends to the first active region 106.
  • the first dielectric layer 118 is patterned according to any appropriate patterning technique known to one of skill in the art. In one or more embodiments, the first dielectric layer 118 is patterned by etching.
  • conventional masking, wet etching and/or dry etching processes can be used to pattern the first dielectric layer 118.
  • a pattern is transferred to the first dielectric layer 118 using nanoimprint lithography.
  • the substrate is etched in a reactive ion etching (RIE) tool using conditions that etch the first dielectric layer efficiently but etch the third p-type layer 304p or the third n-type layer 304n or the second n-type layer 204n very slowly or not at all.
  • RIE reactive ion etching
  • FIG. 2 is a cross-sectional view of the stack after a step in the manufacture of a LED device 100 according to one or more embodiments.
  • the first dielectric layer 118 is patterned to form an opening (not illustrated) between the first dielectric layer 118, exposing a top surface of the semiconductor layers 104.
  • each of the plated metals 120a, 120b, 120c has a different thickness.
  • the first plated metal 120a has a first thickness, T1
  • the second plated metal 120b has a second thickness
  • T2 has a second thickness
  • T3 has a third thickness
  • the second plated metal 120b has a second thickness, T2, that is greater than the first thickness, T1 of the first plated metal 120a.
  • the third plated metal 120c has a third thickness, T3, that is greater than the second thickness, T2 of the second plated metal 120b.
  • the plated metal 120a, 120b, and 120c may comprise any suitable material known to the skilled artisan.
  • the plated metal 120a, 120b, and 120c may comprise one or more of aluminum (Al), silver (Ag), gold (Au), platinum (Pt), and palladium (Pd).
  • the plated metal 120a, 120b, and 120c comprises silver (Ag).
  • additional metals may be added in small quantities to the plated metal 120a, 120b, and 120c as adhesion promoters.
  • adhesion promoters include, but are not limited to, one or more of nickel (Ni), titanium (Ti), and chromium (Cr). Docket No.2022P00047WO01 PATENT [0069] With reference to FIG. 2, an electrode metal, e.g., to yield the plated metal 120a, 120b, and 120c is deposited on the substrate, including on top of the mesas or pixel stacks 102a, 102b, 102c in the opening.
  • the electrode metal can comprise any appropriate material known to the skilled artisan.
  • the electrode metal comprises copper and the electrode metal material is deposited by electrochemical deposition (ECD) of the copper.
  • ECD electrochemical deposition
  • the electrode metal is planarized, etched, or polished to yield the plated metal 120a, 120b, and 120c.
  • planarized refers to a process of smoothing surfaces and includes, but is not limited to, chemical mechanical polishing/planarization (CMP), etching, and the like.
  • CMP chemical mechanical polishing/planarization
  • the semiconductor layers 104 are etched to form three mesas, which are the three pixel stacks 102a, 102b, and 102c. In the embodiment illustrated in FIG.
  • the first mesa or first pixel stack 102a and the second mesa or second pixel stack 102b are separated by a trench. Each trench has sidewalls.
  • the second mesa or second pixel stack 102b is separated from the third mesa or third pixel stack 102c by a second trench.
  • Each trench has sidewalls 124b.
  • the trenches are filled with plated metal 120 for the side n-contact.
  • the plated metal 120 is a common cathode.
  • the plated metal 120 may comprise any appropriate material known to one of skill in the art.
  • the plated metal 120 comprises a conducting metal.
  • the plurality of spaced mesas defines a matrix of pixels 102a, 102b, 102c, and the matrix of pixels are surrounded by the common cathode.
  • a second dielectric layer 126 is deposited along each of the spaced mesas 120a, 120b, 120c. In one or more embodiments, the second dielectric layer 126 may be deposited by any appropriate technique known to the skilled artisan.
  • the second dielectric layer 126 is deposited by one or more of sputter deposition, atomic layer deposition (ALD), chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma enhanced atomic layer deposition (PEALD), and plasma enhanced chemical vapor deposition (PECVD).
  • ALD atomic layer deposition
  • CVD chemical vapor deposition
  • PVD physical vapor deposition
  • PEALD plasma enhanced atomic layer deposition
  • PECVD plasma enhanced chemical vapor deposition
  • PECVD plasma enhanced chemical vapor deposition
  • Suitable dielectric materials Docket No.2022P00047WO01 PATENT include, but are not limited to, silicon oxide (SiO), silicon nitride (SiN), silicon carbide (SiC), aluminum oxide (AlOx), aluminum nitride (AlN) and combinations thereof.
  • SiO silicon oxide
  • SiN silicon nitride
  • SiC silicon carbide
  • AlOx aluminum oxide
  • AlN aluminum nitride
  • the second dielectric layer 126 includes, but is not limited to, oxides, e.g., silicon oxide (SiO2), aluminum oxide (Al2O3), nitrides, e.g., silicon nitride (Si3N4).
  • the second dielectric layer 126 comprises silicon oxide (SiO2).
  • the second dielectric layer 126 composition is non- stoichiometric relative to the ideal molecular formula.
  • the dielectric layer includes, but is not limited to, oxides (e.g., silicon oxide, aluminum oxide), nitrides (e.g., silicon nitride (SiN)), oxycarbides (e.g., silicon oxycarbide (SiOC)), and oxynitrocarbides (e.g., silicon oxycarbonitride (SiNCO)).
  • oxides e.g., silicon oxide, aluminum oxide
  • nitrides e.g., silicon nitride (SiN)
  • oxycarbides e.g., silicon oxycarbide (SiOC)
  • SiNCO silicon oxycarbonitride
  • the second dielectric layer 126 may be a distributed Bragg reflector (DBR).
  • DBR distributed Bragg reflector
  • a “distributed Bragg reflector” refers to a structure (e.g., a mirror) formed from a multilayer stack of alternating thin film materials with varying refractive index, for example high-index and low-index films.
  • the second dielectric layer 126 has a thickness in a range of from about 200 nm to about 1 ⁇ m, for example, about 300 nm to about 1 ⁇ m, about 400 nm to about 1 ⁇ m, about 500 nm to about 1 ⁇ m, about 600 nm to about 1 ⁇ m, about 700 nm to about 1 ⁇ m, about 800 nm to about 1 ⁇ m, about 500 nm to about 1 ⁇ m, about 200 nm to about 900 nm, 300 nm to about 900 nm, about 400 nm to about 900 nm, about 500 nm to about 900 nm, about 600 nm to about 900 nm, about 700 nm to about 900 nm, about 800 nm to about 900 nm, about 200 nm to about 800 nm, 300 nm to about 800 nm, about 400 nm to about 800 nm, about 500 nm to about 1 ⁇ m, about
  • the second dielectric layer 126 is patterned according to any appropriate patterning technique known to one of skill in the art. In one or more Docket No.2022P00047WO01 PATENT embodiments, the second dielectric layer 126 is patterned by etching. According to one or more embodiments, conventional masking, wet etching and/or dry etching processes can be used to pattern the second dielectric layer 126. [0079] In other embodiments, a pattern is transferred to the second dielectric layer 126 using nanoimprint lithography.
  • the substrate is etched in a reactive ion etching (RIE) tool using conditions that etch the second dielectric layer 126 efficiently but etch the plated metal 120a, 120b, 120c.
  • RIE reactive ion etching
  • the etching is selective to the second dielectric layer 126 over the plated metal 120a, 120b, 120c.
  • masking techniques may be used to achieve a desired pattern.
  • under bump metallization (UBM) material forms an under-bump metallization (UBM) layer 122a, which is deposited in the openings (not illustrated) of the second dielectric layer 126.
  • under bump metallization refers to the metal layer which is required for connecting a die to a substrate with solder bumps for flip-chip packages.
  • the UBM layer 122a, 122b, 122c may be a patterned, thin-film stack of material that provides an electrical connection from the die to a solder bump, provides a barrier function to limit unwanted diffusion from the bump to the die, and provides a mechanical interconnection of the solder bump to the die through adhesion to the die passivation and attachment to a solder bump pad.
  • the UBM layer 122a, 122b, 122c may comprise any suitable metal known to the skilled artisan.
  • the UBM layer 122a, 122b, 122c may comprise gold (Au).
  • under bump metallization may be achieved by any technique known to one of skill in the art including, but not limited to, a dry vacuum sputter method combined with electroplating.
  • a dry vacuum sputter method combined with electroplating consists of multi-metal layers being sputtered in a high temperature evaporation system.
  • the UBM layer 122a, 122b, 122c may be patterned (e.g., by masking and etching) using any suitable technique known to one of skill in the art including, but not limited to, lithography, wet etching, or dry etching.
  • the patterning of the UBM layer 122a, 122b, 122c provides anode pads in contact with the plated metal 120a, 120b, 120c.
  • FIG.3 illustrates a matrix arrangement 200 of the three-color RGB pixels according to one or more embodiments described herein.
  • the red pixels 202, the green pixels 206, and the blue pixels 204 are arranged in a matrix.
  • a display can present to a user a view of scene, such as a three-dimensional scene.
  • the user can move within the scene, such as by repositioning the user’s head or by walking.
  • the virtual reality system can detect the user’s movement and alter the view of the scene to account for the movement. For example, as a user rotates the user’s head, the system can present views of the scene that vary in view directions to match the user’s gaze.
  • the virtual reality system can simulate a user’s presence in the three- dimensional scene.
  • a virtual reality system can receive tactile sensory input, such as from wearable position sensors, and can optionally provide tactile feedback to the user.
  • the display can incorporate elements from the user’s surroundings into the view of the scene.
  • the augmented reality system can add textual captions and/or visual elements to a view of the user’s surroundings.
  • a retailer can use an augmented reality system to show a user what a piece of furniture would look like in a room of the user’s home, by incorporating a visualization of the piece of furniture over a captured image of the user’s surroundings.
  • FIG. 4 shows a block diagram of an example of a visualization system 10 that utilizes the ⁇ LED array of one or more embodiments.
  • the visualization system 10 can include a wearable housing 12, such as a headset or goggles.
  • the housing 12 can mechanically support and house the elements detailed below.
  • one or more of the elements detailed below can be included in one or more additional housings that can be separate from the wearable housing 12 and couplable to the wearable housing 12 wirelessly and/or via a wired connection.
  • a separate housing can reduce the weight of wearable goggles, such as by including batteries, radios, and other elements.
  • the housing 12 can include one or more batteries 14, which can electrically power any or all of the elements detailed below.
  • the Docket No.2022P00047WO01 PATENT housing 12 can include circuitry that can electrically couple to an external power supply, such as a wall outlet, to recharge the batteries 14.
  • the housing 12 can include one or more radios 16 to communicate wirelessly with a server or network via a suitable protocol, such as WiFi.
  • the visualization system 10 can include one or more sensors 18, such as optical sensors, audio sensors, tactile sensors, thermal sensors, gyroscopic sensors, time-of-flight sensors, triangulation-based sensors, and others.
  • one or more of the sensors can sense a location, a position, and/or an orientation of a user.
  • one or more of the sensors 18 can produce a sensor signal in response to the sensed location, position, and/or orientation.
  • the sensor signal can include sensor data that corresponds to a sensed location, position, and/or orientation.
  • the sensor data can include a depth map of the surroundings.
  • the visualization system 10 can include one or more video generation processors 20.
  • the one or more video generation processors 20 can receive from a server and/or a storage medium, scene data that represents a three-dimensional scene, such as a set of position coordinates for objects in the scene or a depth map of the scene.
  • the one or more video generation processors 20 can receive one or more sensor signals from the one or more sensors 18.
  • the one or more video generation processors 20 can generate at least one video signal that corresponds to a view of the scene.
  • the one or more video generation processors 20 can generate two video signals, one for each eye of the user, that represent a view of the scene from a point of view of the left eye and the right eye of the user, respectively.
  • the one or more video generation processors 20 can generate more than two video signals and combine the video signals to provide one video signal for both eyes, two video signals for the two eyes, or other combinations.
  • the visualization system 10 can include one or more light sources 22 that can provide light for a display of the visualization system 10.
  • Suitable light sources 22 can include a light-emitting diode, a monolithic light-emitting diode, a plurality of light-emitting diodes, an array of light-emitting diodes, an array of light-emitting diodes disposed on a common substrate, a segmented light-emitting diode that is disposed on a single substrate and has light- Docket No.2022P00047WO01 PATENT emitting diode elements that are individually addressable and controllable (and/or controllable in groups and/or subsets), an array of micro-light-emitting diodes (microLEDs), and others.
  • a light-emitting diode a monolithic light-emitting diode, a plurality of light-emitting diodes, an array of light-emitting diodes, an array of light-
  • a light-emitting diode can be a white-light light-emitting diode.
  • a white-light light-emitting diode can emit excitation light, such as blue light or violet light.
  • the white-light light-emitting diode can include one or more phosphors that can absorb some or all of the excitation light and can, in response, emit phosphor light, such as yellow light, that has a wavelength greater than a wavelength of the excitation light.
  • the one or more light sources 22 can include light-producing elements having different colors or wavelengths.
  • a light source can include a red light-emitting diode that can emit red light, a green light-emitting diode that can emit green light, and a blue light-emitting diode that can emit blue right.
  • the red, green, and blue light combine in specified ratios to produce any suitable color that is visually perceptible in a visible portion of the electromagnetic spectrum.
  • the light source 22 includes a LED of one or more embodiments that emits red-green-and-blue light (RGB).
  • the visualization system 10 can include one or more modulators 24.
  • the modulators 24 can be implemented in one of at least two configurations.
  • the modulators 24 can include circuitry that can modulate the light sources 22 directly.
  • the light sources 22 can include an array of light- emitting diodes, and the modulators 24 can directly modulate the electrical power, electrical voltage, and/or electrical current directed to each light-emitting diode in the array to form modulated light.
  • the modulation can be performed in an analog manner and/or a digital manner.
  • the light sources 22 can include an array of red light-emitting diodes, an array of green light-emitting diodes, and an array of blue light-emitting diodes, and the modulators 24 can directly modulate the red light-emitting diodes, the green light-emitting diodes, and the blue light-emitting diodes to form the modulated light to produce a specified image.
  • the modulators 24 can include a modulation panel, such as a liquid crystal panel.
  • the light sources 22 can produce uniform illumination, or nearly uniform illumination, to illuminate the modulation panel.
  • the modulation panel can include pixels.
  • Each pixel can selectively attenuate a respective portion of the modulation panel area in response to an electrical modulation signal to form the modulated light.
  • the modulators 24 can include multiple modulation panels that can modulate different colors of light.
  • the modulators 24 can include a red modulation panel that can attenuate red light from a red-light source such as a red light-emitting diode, a green modulation panel that can attenuate green light from a green light source such as a green light-emitting diode, and a blue modulation panel that can attenuate blue light from a blue light source such as a blue light-emitting diode.
  • the modulators 24 can receive uniform white light or nearly uniform white light from a white light source, such as a white- light light-emitting diode.
  • the modulation panel can include wavelength-selective filters on each pixel of the modulation panel.
  • the panel pixels can be arranged in groups (such as groups of three or four), where each group can form a pixel of a color image.
  • each group can include a panel pixel with a red color filter, a panel pixel with a green color filter, and a panel pixel with a blue color filter.
  • Other suitable configurations can also be used.
  • the visualization system 10 can include one or more modulation processors 26, which can receive a video signal, such as from the one or more video generation processors 20, and, in response, can produce an electrical modulation signal.
  • the electrical modulation signal can drive the light sources 24.
  • the modulators 24 include a modulation panel
  • the electrical modulation signal can drive the modulation panel.
  • the visualization system 10 can include one or more beam combiners 28 (also known as beam splitters 28), which can combine light beams of different colors to form a single multi-color beam.
  • the visualization system 10 can include one or more wavelength-sensitive (e.g., dichroic) beam splitters 28 that can combine the light of different colors to form a single multi-color beam.
  • the visualization system 10 can direct the modulated light toward the eyes of the viewer in one of at least two configurations.
  • the visualization system 10 can function as a projector, and can include suitable projection optics 30 that can project the modulated light onto one or more screens 32.
  • the screens 32 can be located a suitable distance from an eye of the user.
  • the visualization system 10 can optionally include one or more lenses 34 that can locate a virtual image of a screen 32 at a suitable distance from the eye, such as a close-focus distance, such as 500 mm, 750 mm, or another suitable distance.
  • the visualization system 10 can include a single screen 32, such that the modulated light can be directed toward both eyes of the user.
  • the visualization system 10 can include two screens 32, such that the modulated light from each screen 32 can be directed toward a respective eye of the user.
  • the visualization system 10 can include more than two screens 32. In a second configuration, the visualization system 10 can direct the modulated light directly into one or both eyes of a viewer.
  • the projection optics 30 can form an image on a retina of an eye of the user, or an image on each retina of the two eyes of the user.
  • the visualization system 10 can include an at least partially transparent display, such that a user can view the user’s surroundings through the display.
  • the augmented reality system can produce modulated light that corresponds to the augmentation of the surroundings, rather than the surroundings itself.
  • the augmented reality system can direct modulated light, corresponding to the chair but not the rest of the room, toward a screen or toward an eye of a user.
  • EMBODIMENTS [00102] Various embodiments are listed below.
  • Embodiment (a). A light emitting diode (LED) die comprising: a first mesa defining a red pixel, the first mesa comprising semiconductor layers, three active regions, two tunnel junctions, a transparent conductive oxide layer, and a first plated metal; a second mesa adjacent the first mesa, the second mesa defining a green pixel and comprising semiconductor layers, two active regions, two tunnel junctions, and a second plated metal; a third mesa adjacent the second mesa, the third mesa defining a blue pixel and comprising semiconductor layers, one active region, one tunnel junction, and a third plated metal; and a n-contact extending along sidewalls of each of the first mesa, the second mesa, and the third mesa.
  • LED light emitting diode
  • Embodiment (b) The LED die of embodiment (a), wherein the three active regions of the first mesa comprise a blue active region, a green active region, and red active region.
  • Embodiment (c) The LED die of embodiment (a) to (b), wherein the two active regions of the second mesa comprise a blue active region and a green active region. Docket No.2022P00047WO01 PATENT [00106]
  • Embodiment (d) The LED die of embodiment (a) to (c), wherein the active region of the third mesa comprises a blue active region.
  • Embodiment (f) The LED die of embodiment (a) to (e), wherein the second thickness is greater than the first thickness.
  • Embodiment (g) The LED die of embodiment (a) to (f), wherein the third thickness is greater than the second thickness.
  • Embodiment (h) The LED die of embodiment (a) to (g), further comprising a first dielectric layer on a top surface of the first mesa and extending to the red active region.
  • Embodiment (l) The LED die of embodiment (a) to (h), further comprising a second dielectric on a top surface of the second mesa and extending to the green active region.
  • Embodiment (j) The LED die of embodiment (a) to (i), further comprising a third dielectric layer on a top surface of the third mesa and extending to the blue active region.
  • Embodiment (k) The LED die of embodiment (a) to (j), wherein the dielectric layer comprises a low refractive index material having a refractive index in a range of from about 1.2 to about 2.
  • Embodiment (m) The LED die of embodiment (a) to (k), wherein the dielectric layer comprises one or more of silicon oxide (SiO2) and silicon nitride (Si3N4).
  • Embodiment (m) The LED die of embodiment (a) to (l), wherein the semiconductor layers comprise a III-nitride material.
  • Embodiment (n) The LED die of embodiment (a) to (m), wherein the III-nitride material independently comprises one or more of aluminum, gallium, and indium.
  • Embodiment (o) Embodiment (o).
  • a method of manufacturing an LED device comprising: depositing a plurality of semiconductor layers including an N-type layer, an active region, and a P-type layer on a substrate; etching a portion of the semiconductor layers to form trenches and a first mesa, a second mesa, and a third mesa, wherein: the first mesa defines a red pixel, the first mesa comprising semiconductor layers, three active regions, two tunnel junctions, a transparent conductive oxide layer, and a first plated metal plug; the second mesa adjacent the first mesa, the second mesa defines a green pixel and comprising semiconductor layers, two active regions, two tunnel junctions, and a second plated metal plug; the third mesa Docket No.2022P00047WO01 PATENT adjacent the second mesa, the third mesa defines a blue pixel and comprising semiconductor layers, one active region, one tunnel junction, and a third plated plug; depositing a first dielectric material in a portion of the first di
  • Embodiment (p). The method of embodiment (o), wherein the plated metal layer extends along sidewalls of each of the first mesa, the second mesa, and the third mesa to form a common cathode.
  • Embodiment (q). The method of embodiment (o) to (p), wherein the three active regions of the first mesa comprise a blue active region, a green active region, and red active region.
  • Embodiment (r) The method of embodiment (o) to (q), wherein the two active regions of the second mesa comprise a blue active region and a green active region.
  • Embodiment (t) The method of embodiment (o) to (s), wherein the first plated metal plug has a first thickness.
  • Embodiment (u) The method of embodiment (o) to (t), wherein the second plated metal plug has a second thickness.
  • Embodiment (v) The method of embodiment (o) to (u), wherein the third plated metal plug has a third thickness.
  • Embodiment (w) The method of embodiment (o) to (v), wherein the second thickness is greater than the first thickness, and the third thickness is greater than the second thickness.

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Abstract

L'invention concerne une puce RVB basée sur une jonction tunnel avec des régions actives isolées. Le réseau de µDEL d'un ou de plusieurs modes de réalisation nécessite avantageusement trois métaux plaqués et un groupe de pixels à cathode commune par rouge-vert-bleu (RVB). De plus, le réseau de µDEL d'un ou de plusieurs modes de réalisation permet une meilleure commande de la couleur d'émission que dans les technologies RVB connues. Un pixel rouge, un pixel vert et un pixel bleu sont développés séquentiellement sur la même tranche épitaxiale. Chaque pixel contient au moins une zone active et au moins une jonction tunnel. Chaque région active émet de la lumière de longueur d'onde différente de celle de l'autre ou des autres régions actives. L'épitaxie comprend au moins une jonction tunnel pour éviter le besoin de contacts avec des couches p-GaN gravées. La tranche est gravée dans des mésas à plusieurs niveaux reliés à des métaux plaqués à plusieurs niveaux. Toutes les jonctions partagent une cathode commune.
PCT/US2023/083518 2022-12-12 2023-12-12 Puce rvb basée sur une jonction tunnel avec régions actives isolées WO2024129659A1 (fr)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210193731A1 (en) * 2019-12-23 2021-06-24 Lumileds Llc III-Nitride Multi-Wavelength LED Arrays
US20210193730A1 (en) * 2019-12-23 2021-06-24 Lumileds Llc III-Nitride Multi-Wavelength LED Arrays
US20220037393A1 (en) * 2018-12-11 2022-02-03 Aledia Optoelectronic device comprising pixels which emit three colours

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220037393A1 (en) * 2018-12-11 2022-02-03 Aledia Optoelectronic device comprising pixels which emit three colours
US20210193731A1 (en) * 2019-12-23 2021-06-24 Lumileds Llc III-Nitride Multi-Wavelength LED Arrays
US20210193730A1 (en) * 2019-12-23 2021-06-24 Lumileds Llc III-Nitride Multi-Wavelength LED Arrays

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