WO2024128133A1 - マスク及びマスクの製造方法 - Google Patents

マスク及びマスクの製造方法 Download PDF

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Publication number
WO2024128133A1
WO2024128133A1 PCT/JP2023/043872 JP2023043872W WO2024128133A1 WO 2024128133 A1 WO2024128133 A1 WO 2024128133A1 JP 2023043872 W JP2023043872 W JP 2023043872W WO 2024128133 A1 WO2024128133 A1 WO 2024128133A1
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WO
WIPO (PCT)
Prior art keywords
layer
less
region
mask
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/043872
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English (en)
French (fr)
Japanese (ja)
Inventor
大祐 北山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to KR1020257023101A priority Critical patent/KR20250123846A/ko
Priority to EP23903420.0A priority patent/EP4636122A1/en
Priority to CN202380085998.7A priority patent/CN120359322A/zh
Priority to JP2024564337A priority patent/JPWO2024128133A1/ja
Priority to CN202511898112.8A priority patent/CN121610739A/zh
Publication of WO2024128133A1 publication Critical patent/WO2024128133A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1655—Process features
    • C23C18/1657—Electroless forming, i.e. substrate removed or destroyed at the end of the process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F17/00—Multi-step processes for surface treatment of metallic material involving at least one process provided for in class C23 and at least one process covered by subclass C21D or C22F or class C25
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/10—Moulds; Masks; Masterforms
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/12—Electroplating: Baths therefor from solutions of nickel or cobalt
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/562—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of iron or nickel or cobalt
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/12—Production of screen printing forms or similar printing forms, e.g. stencils
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/12—Gaseous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions

Definitions

  • the vapor deposition method is known as a method for forming precise patterns.
  • a mask with openings is first combined with a substrate.
  • the vapor deposition material is applied to the substrate through the openings in the mask. This allows a vapor deposition layer containing the vapor deposition material to be formed on the substrate in a pattern corresponding to the pattern of the mask openings.
  • the vapor deposition method is used, for example, as a method for forming pixels for organic electroluminescence (EL) display devices.
  • JP2021-172879A discloses a deposition mask including a metal layer in which the above-mentioned openings are formed.
  • the metal layer is formed by a plating method. In this method, first, a plurality of resin convex portions arranged in a pattern corresponding to the pattern of the openings are formed on a seed layer. Next, metal is deposited by a plating method on the seed layer on which the resin convex portions are formed. As a result, a metal layer having openings is formed in the portions where the resin convex portions are arranged.
  • Deposition masks are required to have uniform opening dimensions.
  • the resin convex parts are shaped like truncated pyramids or cones, which gives the openings in the metal layer a tapered shape.
  • the thickness of the metal layer is not uniform, the dimensions of the openings will vary, and when the metal layer is formed by plating, there is a problem in that the thickness of the metal layer becomes non-uniform in the areas with the openings.
  • the embodiment of the present disclosure aims to manufacture a mask that can effectively solve these problems.
  • the mask comprises: a first layer including a first surface, a second surface opposite the first surface, and at least one first opening extending from the first surface to the second surface; a metal layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first opening in a plan view,
  • the first layer may comprise silicon or a silicon compound;
  • the metal layer may include an effective area in which the plurality of second openings are formed, and a peripheral area surrounding the effective area,
  • the peripheral region may include a dummy region adjacent to the peripheral region and circumferentially surrounding the peripheral region, the dummy region having a plurality of recesses recessed from the fourth surface toward the third surface.
  • Embodiments of the present disclosure can make the dimensions of the second opening in the metal layer more uniform.
  • FIG. 1 is a cross-sectional view showing an example of an organic device.
  • FIG. 1 is a diagram showing an example of a deposition apparatus equipped with a mask.
  • FIG. 2 is a plan view showing an example of a mask when viewed from the incident surface side.
  • FIG. 13 is a plan view showing a modified example of the mask when viewed from the entrance surface side.
  • FIG. 13 is a plan view showing a modified example of the mask when viewed from the entrance surface side.
  • FIG. 2 is a plan view showing an example of a mask when viewed from the exit surface side.
  • FIG. 3B is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 3A.
  • FIG. 3B is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 3A.
  • FIG. 9B is a plan view showing the resist convex portion shown in FIG. 9A together with an intermediate layer.
  • FIG. 9D is an enlarged view of a portion surrounded by a two-dot chain line in FIG. 9C.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • FIG. 12B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 12A.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • 4A to 4C are cross-sectional views showing a step of a method for manufacturing a mask.
  • FIG. 5 is a plan view corresponding to FIG. 4 and showing a modified example of the mask.
  • FIG. 21 is a diagram showing a part of a cross section taken along line XXI-XXI of the mask shown in FIG. 20.
  • FIG. 6B is a cross-sectional view corresponding to FIG. 6A and showing a modified example of the mask.
  • FIG. 1 is a diagram showing an example of an apparatus including an organic device.
  • the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes.
  • the mask of this embodiment may be used to form layers such as organic layers and electrodes of a device for displaying or projecting images or videos to express virtual reality, or so-called VR, or augmented reality, or so-called AR.
  • the mask of this embodiment may also be used to form layers of a display device other than an organic EL display device, such as electrodes of a liquid crystal display device.
  • the mask of this embodiment may also be used to form layers of an organic device other than a display device, such as an organic layer and electrodes of a pressure sensor.
  • a first aspect of the present disclosure is a mask, comprising: a first layer including a first surface, a second surface opposite the first surface, and at least one first opening extending from the first surface to the second surface; a metal layer including a third surface facing the second surface, a fourth surface located on the opposite side of the third surface, and a plurality of second openings penetrating from the third surface to the fourth surface and overlapping with the first openings in a plan view; the first layer comprises silicon or a silicon compound; the metal layer includes an effective area in which the plurality of second openings are formed, and a peripheral area surrounding the effective area;
  • the peripheral region is a mask having a dummy region adjacent to the effective region and circumferentially surrounding the effective region, the dummy region having a plurality of recesses formed therein that are recessed from the fourth surface toward the third surface.
  • the mask according to the second aspect of the first aspect described above may include a seed layer located between the second surface and the third surface.
  • the seed layer may be conductive.
  • a stopper layer may be included between the second surface and the third surface.
  • a mask according to any one of the first to fourth aspects comprising:
  • the second opening may be defined by a wall surface connecting the third surface and the fourth surface,
  • the wall surface may include a tapered surface that widens outwardly toward the fourth surface.
  • the width of the dummy region may be 0.6 mm or more.
  • the number of the recesses per unit area in the dummy region may be 0.7 to 1.3 times the number of the second openings per unit area in the effective region.
  • the pitch of the recesses may be 0.7 to 1.3 times the pitch of the second openings.
  • the distance between the second opening located on the outermost side of the effective area and the recess closest to the second opening may be 0.7 times or more and 1.3 times or less the pitch of the second openings.
  • a mask according to any one of the first to ninth aspects of the present invention comprising:
  • the thickness of the metal layer may be 2 ⁇ m or more and 7 ⁇ m or less
  • the recess may extend from the fourth surface through a portion of a thickness of the metal layer.
  • the bottom of the recess may have a thickness of 0.5 ⁇ m or more and 1.5 ⁇ m or less.
  • An eleventh aspect of the present disclosure is a method for manufacturing a mask, comprising: preparing a laminate including a first layer including a first surface and a second surface located opposite to the first surface, and a seed layer including a fifth surface facing the second surface and a sixth surface located opposite to the fifth surface; providing a first resist layer comprising a positive resist on the sixth surface of the seed layer; exposing and developing the first resist layer to form a plurality of resist convex portions protruding from the sixth surface in a third region on the sixth surface and in a fourth region surrounding the third region; performing a first plating process of depositing metal on the sixth surface on which the plurality of resist convex portions are formed in the third region and the fourth region to form a first metal layer having a plurality of openings corresponding to the plurality of resist convex portions; removing the resist convex portion located in the fourth region; removing the resist convex portion located in the third region; forming a second resist layer partially on the first surface of the first layer; forming
  • the method may further include a step of performing a second plating process after the step of removing the resist convex portion located in the fourth region and before the step of removing the resist convex portion located in the third region, in which a second metal layer is deposited on the first metal layer and the sixth surface to form a second metal layer that blocks at least a portion of the opening located in the fourth region.
  • the seed layer may be electrically conductive;
  • the first plating process and the second plating process may be electrolytic plating processes.
  • a step of removing the seed layer that overlaps the first opening in a planar view may be included.
  • the stack may include a stopper layer between the first layer and the seed layer.
  • the method of manufacturing the mask may include the step of removing the stopper layer after the step of forming the first opening in the first layer.
  • forming a protective layer covering the second metal layer after the second plating process and before forming the first opening may include removing the protective layer after forming the first opening in the first layer.
  • the width of the fourth region may be 0.6 mm or more.
  • the thickness of the first metal layer may be 0.5 ⁇ m or more and 6.5 ⁇ m or less
  • the second metal layer may have a thickness of 0.5 ⁇ m or more and 1.5 ⁇ m or less.
  • Figure 1 is a cross-sectional view showing an example of an organic device 100.
  • the organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110.
  • the substrate 110 includes a first surface 111 and a second surface 112 located on the opposite side of the first surface 111.
  • the elements 115 are located on the first surface 111.
  • the elements 115 are, for example, pixels.
  • the substrate 110 may include two or more types of elements 115.
  • the substrate 110 may include a first element 115A and a second element 115B.
  • the substrate 110 may include a third element.
  • the first element 115A, the second element 115B, and the third element are, for example, a red pixel, a blue pixel, and a green pixel.
  • the element 115 may have a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130.
  • the organic device 100 may have an insulating layer 160 located between two adjacent first electrodes 120 in a planar view.
  • the insulating layer 160 contains, for example, polyimide.
  • the insulating layer 160 may overlap an end of the first electrode 120.
  • Planar view means viewing an object along the normal direction of the surface of a plate-like member such as the substrate 110.
  • the substrate 110 may be an insulating member.
  • the material of the substrate 110 may be, for example, a rigid material with no flexibility, such as silicon, quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material with flexibility, such as a resin film, an optical resin plate, or thin glass.
  • the substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing.
  • the substrate 110 can be processed using an apparatus that performs a semiconductor manufacturing process.
  • the first electrode 120, the insulating layer 160, and the like can be formed on the substrate 110 using an apparatus that performs a semiconductor manufacturing process.
  • Element 115 is configured to realize some function by applying a voltage between first electrode 120 and second electrode 140, or by causing a current to flow between first electrode 120 and second electrode 140.
  • element 115 when element 115 is a pixel of an organic EL display device, element 115 can emit light that constitutes an image.
  • the first electrode 120 includes a material having electrical conductivity.
  • the first electrode 120 includes a metal, a metal oxide having electrical conductivity, or other inorganic material having electrical conductivity.
  • the first electrode 120 may include a metal oxide having transparency and electrical conductivity, such as indium tin oxide.
  • the organic layer 130 includes an organic material. When a current is passed through the organic layer 130, the organic layer 130 can perform some function. Passing a current means that a voltage is applied to the organic layer 130 or that a current flows through the organic layer 130.
  • the organic layer 130 may be a light-emitting layer that emits light when a current is passed through it, or a layer whose light transmittance or refractive index changes when a current is passed through it.
  • the organic layer 130 may include an organic semiconductor material.
  • the organic layer 130 may include a first organic layer 130A and a second organic layer 130B.
  • the first organic layer 130A is included in the first element 115A.
  • the second organic layer 130B is included in the second element 115B.
  • the organic layer 130 may include a third organic layer included in a third element.
  • the first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.
  • the organic layer 130 located between them is driven. If the organic layer 130 is an emitting layer, light is emitted from the organic layer 130 and extracted to the outside from the second electrode 140 side or the first electrode 120 side.
  • the organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, etc.
  • the second electrode 140 may include a conductive material such as a metal.
  • a conductive material such as a metal. Examples of materials that can be used for the second electrode 140 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, carbon, and alloys thereof. As shown in FIG. 1, the second electrode 140 may extend across two adjacent organic layers 130 in a plan view.
  • FIG. 2 is a diagram showing a vapor deposition device 10.
  • the vapor deposition device 10 performs a vapor deposition process in which a vapor deposition material is vapor-deposited on a target object.
  • the deposition apparatus 10 may include therein a deposition source 6, a heater 8, and a mask 20.
  • the deposition apparatus 10 may further include an exhaust means for creating a vacuum atmosphere inside the deposition apparatus 10.
  • the deposition source 6 is, for example, a crucible.
  • the deposition source 6 contains a deposition material 7 such as an organic material or a metallic material.
  • the heater 8 heats the deposition source 6 to evaporate the deposition material 7 under a vacuum atmosphere.
  • the mask 20 includes an incident surface 201, an exit surface 202, and a second opening 41.
  • the incident surface 201 faces the deposition source 6.
  • the exit surface 202 is located on the opposite side of the incident surface 201.
  • the exit surface 202 faces the first surface 111 of the substrate 110.
  • a portion of the deposition material 7 that enters the mask 20 from the exit surface 202 passes through the second opening 41 and exits from the exit surface 202.
  • the deposition material 7 that exits from the exit surface 202 adheres to the first surface 111 of the substrate 110.
  • the exit surface 202 of the mask 20 may be in contact with the first surface 111 of the substrate 110.
  • the deposition device 10 may include a magnet 5 disposed on the second surface 112 side of the substrate 110.
  • the magnet 5 can attract the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of a shadow in the deposition process.
  • a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the second opening 41 is smaller than the thickness of the organic layer 130 formed at the center of the second opening 41. The shadow occurs due to the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.
  • Fig. 3A is a plan view showing an example of the mask 20 when viewed from the side of the incident surface 201.
  • Fig. 4 is a plan view showing an example of the mask 20 when viewed from the side of the exit surface 202.
  • Fig. 5A is an enlarged view of the part surrounded by the two-dot chain line in Fig. 3A.
  • Fig. 5B is an enlarged view of the part surrounded by the two-dot chain line in Fig. 4.
  • Fig. 6A is a cross-sectional view taken along line VI-VI of the mask 20 in Fig. 3A.
  • Fig. 6B is an enlarged view of the part surrounded by the two-dot chain line in Fig. 6A.
  • the mask 20 includes a first layer 30, an intermediate layer 50, and a metal layer 40, which are arranged in this order from the entrance surface 201 toward the exit surface 202.
  • the first layer 30 includes silicon or a silicon compound.
  • the silicon compound is, for example, silicon carbide (SiC).
  • the metal layer 40 includes a metal material. Each layer will be described below.
  • the first layer 30 includes a first surface 301, a second surface 302, a first opening 31, and a first wall surface 32.
  • the first surface 301 may constitute the incident surface 201.
  • the second surface 302 is located on the opposite side of the first surface 301.
  • the first opening 31 penetrates from the first surface 301 to the second surface 302.
  • the first layer 30 may include a plurality of first openings 31.
  • the plurality of first openings 31 may be aligned in a first direction D1 and a second direction D2.
  • the second direction D2 may be perpendicular to the first direction D1.
  • the first opening 31 may correspond to one screen of the organic EL display device.
  • the mask 20 shown in FIG. 3A can simultaneously form organic layer patterns corresponding to multiple screens on the substrate 110.
  • the first opening 31 may have a rectangular outline in a plan view.
  • FIGS. 3B and 3C are plan views showing other examples of the mask 20.
  • the corners of the contour of the first opening 31 may include curves.
  • the contour of the first opening 31 may be octagonal. According to the examples shown in FIG. 3B and FIG. 3C, when stress is applied to the contour of the first opening 31, the stress can be prevented from concentrating on the corners. This makes it possible to prevent the first layer 30 from being damaged.
  • the first wall surface 32 is the surface of the first layer 30 facing the first opening 31. In the example shown in FIG. 3A, the first wall surface 32 extends along the normal direction of the first surface 301.
  • the area of the first layer 30 where the first openings 31 are not formed may be divided into an outer area 35 and an inner area 36.
  • the inner area 36 is an area located between two adjacent first openings 31 in a planar view.
  • the outer area 35 is an area located between the outer edge 303 of the first layer 30 and the first openings 31 in a planar view.
  • the inner area 36 may extend in the first direction D1 and the second direction D2 between the two first openings 31.
  • the first layer 30 may include an alignment mark 39.
  • the alignment mark 39 is formed, for example, on the second surface 302.
  • the alignment mark 39 may be formed on the first surface 301.
  • the alignment mark 39 is used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 has a property of transmitting visible light, the alignment mark 39 can be seen through the substrate 110. If the substrate 110 has a property of transmitting infrared light, the alignment mark 39 can be seen through the substrate 110 by using an infrared camera.
  • the alignment mark 39 may have a circular outline in a plan view. Although not shown, the alignment mark 39 may have an outline other than a circle, such as a rectangle or a cross. The alignment mark 39 may be located in the outer region 35 or the inner region 36.
  • the first layer 30 includes silicon or a silicon compound as described above.
  • the first layer 30 is produced, for example, by processing a silicon wafer.
  • the outer edge 303 of the first layer 30 may include a straight portion.
  • the straight portion is also called an orientation flat.
  • a notch may be formed in the outer edge 303.
  • the notch is also called a notch.
  • the orientation flat and the notch represent the crystal orientation of the silicon wafer.
  • the maximum dimension S1 of the first layer 30 in plan view may be, for example, 100 mm or more, 150 mm or more, or 250 mm or more.
  • the dimension S1 may be, for example, 300 mm or less, 400 mm or less, or 500 mm or less.
  • the range of the dimension S1 may be determined by a first group consisting of 100 mm, 150 mm, and 250 mm, and/or a second group consisting of 300 mm, 400 mm, and 500 mm.
  • the range of the dimension S1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the dimension S1 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the dimension S1 may be determined by a combination of any two of the values included in the second group described above.
  • the dimension S1 may be, for example, 100 mm or more and 500 mm or less, 100 mm or more and 400 mm or less, 100 mm or more and 300 mm or less, 100 mm or more and 250 mm or less, 100 mm or more and 150 mm or less, 150 mm or more and 500 mm or less, 150 mm or more and 400 mm or less, 150 mm or more and 300 mm or less, 150 mm or more and 250 mm or less, 250 mm or more and 500 mm or less, 250 mm or more and 400 mm or less, 250 mm or more and 300 mm or less, 300 mm or more and 500 mm or less, 300 mm or more and 400 mm or less, or 400 mm or more and 500 mm or less.
  • the dimension S2 of the first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 5 mm or more, 10 mm or more, or 20 mm or more.
  • the dimension S2 may be, for example, 30 mm or less, 50 mm or less, or 100 mm or less.
  • the range of the dimension S2 may be determined by a first group consisting of 5 mm, 10 mm, and 20 mm, and/or a second group consisting of 30 mm, 50 mm, and 100 mm.
  • the range of the dimension S2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the dimension S2 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the dimension S2 may be determined by a combination of any two of the values included in the second group described above.
  • the dimension S2 may be, for example, 5 mm or more and 100 mm or less, 5 mm or more and 50 mm or less, 5 mm or more and 30 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 30 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 20 mm or more and 30 mm or less, 30 mm or more and 100 mm or less, 30 mm or more and 50 mm or less, or 50 mm or more and 100 mm or less.
  • the interval S3 between two first openings 31 in the direction in which the first openings 31 are arranged may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more.
  • the interval S3 may be, for example, 10 mm or less, 15 mm or less, or 20 mm or less.
  • the range of the interval S3 may be determined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm, and/or a second group consisting of 10 mm, 15 mm, and 20 mm.
  • the range of the interval S3 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the interval S3 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the interval S3 may be determined by a combination of any two of the values included in the second group described above.
  • the interval S3 may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, or
  • the thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35.
  • the thickness T1 may be, for example, 50 ⁇ m or more, 100 ⁇ m or more, or 200 ⁇ m or more.
  • the thickness T1 may be, for example, 600 ⁇ m or less, 800 ⁇ m or less, or 1000 ⁇ m or less.
  • the range of the thickness T1 may be determined by a first group consisting of 50 ⁇ m, 100 ⁇ m, and 200 ⁇ m, and/or a second group consisting of 600 ⁇ m, 800 ⁇ m, and 1000 ⁇ m.
  • the range of the thickness T1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the thickness T1 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the thickness T1 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness T1 may be, for example, 50 ⁇ m or more and 1000 ⁇ m or less, 50 ⁇ m or more and 800 ⁇ m or less, 50 ⁇ m or more and 600 ⁇ m or less, 50 ⁇ m or more and 200 ⁇ m or less, 50 ⁇ m or more and 100 ⁇ m or less, 100 ⁇ m or more and 1000 ⁇ m or less, 100 ⁇ m or more and 800 ⁇ m or less, 100 ⁇ m or more and 600 ⁇ m or less, 100 ⁇ m or more and 200 ⁇ m or less, 200 ⁇ m or more and 1000 ⁇ m or less, 200 ⁇ m or more and 800 ⁇ m or less, 200 ⁇ m or more and 600 ⁇ m or less, 600 ⁇ m or more and 1000 ⁇ m or less, 200
  • the metal layer 40 includes a third surface 401, a fourth surface 402, a plurality of second openings 41, and a plurality of recesses 43.
  • the third surface 401 faces the second surface 302 of the first layer 30.
  • the fourth surface 402 is located on the opposite side of the third surface 401.
  • the second openings 41 penetrate from the third surface 401 to the fourth surface 402.
  • One second opening 41 corresponds to one organic layer 130.
  • a group of multiple regularly-arranged second openings 41 corresponds to one screen of the organic EL display device. As shown in FIG. 3A, a group of multiple regularly-arranged second openings 41 may overlap one first opening 31 in a plan view.
  • the metal layer 40 may be partitioned into a peripheral region 48 (see Figures 4 and 5B) and an effective region 49 (see Figure 5B).
  • the effective region 49 is an area in which a group of a plurality of regularly-arranged second openings 41 is distributed.
  • the peripheral region 48 is an area surrounding the effective region 49. At least a portion of the peripheral region 48 is an area that overlaps with the first layer 30 in a plan view.
  • the peripheral region 48 includes a dummy region 481 (see FIG. 5B) in which a plurality of recesses 43 are formed.
  • the dummy region 481 is adjacent to the effective region 49 and circumferentially surrounds the effective region 49.
  • the recesses 43 are recessed from the fourth surface 402 toward the third surface 401.
  • the width S4 of the dummy region 481 is, for example, 0.6 mm or more, may be 0.7 mm or more, or may be 0.8 mm or more.
  • a portion of the dummy region 481 overlaps with the first opening 31 in a planar view. Therefore, the portion of the dummy region 481 does not overlap with the first layer 30 in a planar view.
  • this is not limited to this example, and the entire dummy region 481 may overlap with the first layer 30 in a planar view.
  • FIG. 6B shows an example of the effective area 49 and the dummy area 481.
  • the metal layer 40 includes a second wall surface 42 facing the second opening 41.
  • the second wall surface 42 includes a tapered surface 42a that widens away from the center of the second opening 41 as it approaches the third surface 401.
  • the tapered surface 42a By including the tapered surface 42a in the second wall surface 42, it is possible to suppress the occurrence of a shadow near the second wall surface 42.
  • the symbol S5 represents the width of the tapered surface 42a in the direction in which the second openings 41 are arranged.
  • the width S5 may be, for example, 0.2 ⁇ m or more, 0.5 ⁇ m or more, or 1.0 ⁇ m or more.
  • the width S5 may be, for example, 10 ⁇ m or less, 20 ⁇ m or less, or 25 ⁇ m or less.
  • the range of the width S5 may be determined by a first group consisting of 0.2 ⁇ m, 0.5 ⁇ m, and 1.0 ⁇ m, and/or a second group consisting of 10 ⁇ m, 20 ⁇ m, and 25 ⁇ m.
  • the range of the width S5 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the width S5 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the width S5 may be determined by a combination of any two of the values included in the second group described above.
  • the width S5 may be, for example, 0.2 ⁇ m or more and 25 ⁇ m or less, 0.2 ⁇ m or more and 20 ⁇ m or less, 0.2 ⁇ m or more and 10 ⁇ m or less, 0.2 ⁇ m or more and 1.0 ⁇ m or less, 0.2 ⁇ m or more and 0.5 ⁇ m or less, 0.5 ⁇ m or more and 25 ⁇ m or less, 0.5 ⁇ m or more and 20 ⁇ m or less, 0.5 ⁇ m or more and 10 ⁇ m or less, 0.5 ⁇ m or more and 1.0 ⁇ m or less, 1.0 ⁇ m or more and 25 ⁇ m or less, 1.0 ⁇ m or more and 20 ⁇ m or less, 1.0 ⁇ m or more and 10 ⁇ m or less, 10 ⁇ m or more and 25 ⁇ m or less, 10 ⁇ m or more and 20 ⁇ m or less, or 20 ⁇ m or more and 25 ⁇ m or less.
  • the symbol ⁇ 1 represents the angle between the second wall surface 42 and the third surface 401.
  • the angle ⁇ 1 may be, for example, 50° or more, 55° or more, 60° or more, or 65° or more.
  • the angle ⁇ 1 may be, for example, 75° or less, 80° or less, 85° or less, or less than 90°.
  • the range of the angle ⁇ 1 may be determined by a first group consisting of 50°, 55°, 60°, and 65°, and/or a second group consisting of 75°, 80°, 85°, and 90°.
  • the range of the angle ⁇ 1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the angle ⁇ 1 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the angle ⁇ 1 may be determined by a combination of any two of the values included in the second group described above.
  • the angle ⁇ 1 may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 75°, 50° or more and less than 65°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 75°, 55° or more and less than 65°, 55° or more and less than 60°, or 60° or more and less than 90°.
  • the recess 43 is defined by a bottom surface 44 and a third wall surface 45 that circumferentially surrounds the bottom surface 44. In other words, the end of the recess 43 on the first layer 30 side is closed by the bottom surface 44. This prevents the deposition material from the deposition source 6 from passing through the recess 43 and adhering to the substrate 110 when the mask 20 is used to form a deposition layer on the substrate 110.
  • the third wall surface 45 defines the opening 43a of the recess 43 at the fourth surface 402.
  • the third wall surface 45 may include a tapered surface 45a that widens away from the center of the opening 43a as it approaches the third surface 401.
  • the width of the tapered surface 45a of the third wall surface 45 may be similar to the tapered surface 42a of the second wall surface 42 of the second opening 41.
  • the angle formed by the tapered surface 45a and the third surface 401 may be similar to the angle ⁇ 1 formed by the second wall surface 42 of the second opening 41 and the fourth surface 402.
  • the metal layer 40 includes a metal material as described above.
  • the metal material is nickel, a nickel-cobalt alloy, an iron-nickel alloy, copper, or the like.
  • the metal layer 40 includes a first metal layer 411 and a second metal layer 412.
  • the first metal layer 411 and the second metal layer 412 may include the same metal material or different metal materials.
  • the metal layer 40 may be formed, for example, by electrolytic plating.
  • the thickness of the metal layer 40 is defined as the distance T2 between the third surface 401 and the fourth surface 402.
  • the thickness T2 of the metal layer 40 is smaller than the thickness T1 of the first layer 30.
  • the thickness T2 may be, for example, 2 ⁇ m or more, 3 ⁇ m or more, or 4 ⁇ m or more.
  • the thickness T2 may be, for example, 5 ⁇ m or less, 6 ⁇ m or less, or 7 ⁇ m or less.
  • the range of the thickness T2 may be determined by a first group consisting of 2 ⁇ m, 3 ⁇ m, and 4 ⁇ m, and/or a second group consisting of 5 ⁇ m, 6 ⁇ m, and 7 ⁇ m.
  • the range of the thickness T2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the thickness T2 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the thickness T2 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness T2 may be, for example, 2 ⁇ m or more and 7 ⁇ m or less, 2 ⁇ m or more and 6 ⁇ m or less, 2 ⁇ m or more and 5 ⁇ m or less, 2 ⁇ m or more and 4 ⁇ m or less, 2 ⁇ m or more and 3 ⁇ m or less, 3 ⁇ m or more and 7 ⁇ m or less, 3 ⁇ m or more and 6 ⁇ m or less, 3 ⁇ m or more and 5 ⁇ m or less, 3 ⁇ m or more and 4 ⁇ m or less, 4 ⁇ m or more and 7 ⁇ m or less, 4 ⁇ m or more and 6 ⁇ m or less, 4 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 7 ⁇ m or less, 5 ⁇ m or more and 6 ⁇ m or less, or 6 ⁇ m or more and 7 ⁇ m or less.
  • the recess 43 extends from the fourth surface 402 of the metal layer 40 over a portion of the thickness T2 of the metal layer 40.
  • the recess 43 has a bottom 40a formed by a portion of the metal layer 40.
  • the bottom 40a of the recess 43 is a region of the metal layer 40 between the bottom surface 44 of the recess 43 and the third surface 401 of the metal layer 40.
  • the thickness of the bottom 40a of the recess 43 is defined as the distance T3 between the bottom surface 44 of the recess 43 and the third surface 401 of the metal layer 40.
  • the thickness T3 of the bottom 40a of the recess 43 is the thickness of the second metal layer 412, as described below.
  • the thickness T3 may be, for example, 0.5 ⁇ m or more, 0.70 ⁇ m or more, or 0.90 ⁇ m or more.
  • the thickness T3 may be, for example, 1.0 ⁇ m or less, 1.25 ⁇ m or less, or 1.5 ⁇ m or less.
  • the range of thickness T3 may be determined by a first group consisting of 0.5 ⁇ m, 0.70 ⁇ m, and 0.90 ⁇ m, and/or a second group consisting of 1.0 ⁇ m, 1.25 ⁇ m, and 1.5 ⁇ m.
  • the range of thickness T3 may be determined by a combination of any one of the values included in the above-mentioned first group and any one of the values included in the above-mentioned second group.
  • the range of thickness T3 may be determined by a combination of any two of the values included in the above-mentioned first group.
  • the range of thickness T3 may be determined by a combination of any two of the values included in the above-mentioned second group.
  • the thickness T3 may be, for example, 0.5 ⁇ m or more and 1.5 ⁇ m or less, 0.5 ⁇ m or more and 1.25 ⁇ m or less, 0.5 ⁇ m or more and 1.0 ⁇ m or less, 0.5 ⁇ m or more and 0.90 ⁇ m or less, 0.5 ⁇ m or more and 0.70 ⁇ m or less, 0.70 ⁇ m or more and 1.5 ⁇ m or less, 0.70 ⁇ m or more and 1.25 ⁇ m or less, 0.70 ⁇ m or more and 1.0 ⁇ m or less, 0.70 ⁇ m or more and 0.90 ⁇ m or less, 0.90 ⁇ m or more and 1.25 ⁇ m or less, 0.90 ⁇ m or more and 1.0 ⁇ m or less, 1.0 ⁇
  • the dimension S6 of the second opening 41 in plan view may be, for example, 1 ⁇ m or more, 2 ⁇ m or more, or 3 ⁇ m or more.
  • the dimension S6 may be, for example, 5 ⁇ m or less, 10 ⁇ m or less, or 25 ⁇ m or less.
  • the range of the dimension S6 may be determined by a first group consisting of 1 ⁇ m, 2 ⁇ m, and 3 ⁇ m, and/or a second group consisting of 5 ⁇ m, 10 ⁇ m, and 25 ⁇ m.
  • the range of the dimension S6 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the dimension S6 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the dimension S6 may be determined by a combination of any two of the values included in the second group described above.
  • the dimension S6 may be, for example, 1 ⁇ m or more and 25 ⁇ m or less, 1 ⁇ m or more and 10 ⁇ m or less, 1 ⁇ m or more and 5 ⁇ m or less, 1 ⁇ m or more and 3 ⁇ m or less, 1 ⁇ m or more and 2 ⁇ m or less, 2 ⁇ m or more and 25 ⁇ m or less, 2 ⁇ m or more and 10 ⁇ m or less, 2 ⁇ m or more and 5 ⁇ m or less, 2 ⁇ m or more and 3 ⁇ m or less, 3 ⁇ m or more and 25 ⁇ m or less, 3 ⁇ m or more and 10 ⁇ m or less, 3 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 10 ⁇ m or less, 3
  • the pitch of the second openings 41 means the distance P1 between the centers of the two adjacent second openings 41 in the direction in which the two second openings 41 are arranged.
  • the pitch P1 of the second openings 41 may be, for example, 1 ⁇ m or more, 2 ⁇ m or more, or 3 ⁇ m or more.
  • the pitch P1 may be, for example, 5 ⁇ m or less, 10 ⁇ m or less, or 25 ⁇ m or less.
  • the range of the pitch P1 may be determined by a first group consisting of 1 ⁇ m, 2 ⁇ m, and 3 ⁇ m, and/or a second group consisting of 5 ⁇ m, 10 ⁇ m, and 25 ⁇ m.
  • the range of the pitch P1 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the pitch P1 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the pitch P1 may be determined by a combination of any two of the values included in the second group described above.
  • the pitch P1 may be, for example, 1 ⁇ m or more and 25 ⁇ m or less, 1 ⁇ m or more and 10 ⁇ m or less, 1 ⁇ m or more and 5 ⁇ m or less, 1 ⁇ m or more and 3 ⁇ m or less, 1 ⁇ m or more and 2 ⁇ m or less, 2 ⁇ m or more and 25 ⁇ m or less, 2 ⁇ m or more and 10 ⁇ m or less, 2 ⁇ m or more and 5 ⁇ m or less, 2 ⁇ m or more and 3 ⁇ m or less, 3 ⁇ m or more and 25 ⁇ m or less, 3 ⁇ m or more and 10 ⁇ m or less, 3 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 25 ⁇ m or less, 5 ⁇ m or more and 10 ⁇ m or less, or 10 ⁇ m or more and 25 ⁇ m or less.
  • the distance S7 between the first wall surface 32 and the second opening 41 in a plan view may be greater than the distance S3. This can prevent a shadow from being generated in the second opening 41 close to the first wall surface 32.
  • the dimension S8 of the opening 43a of the recess 43 in a plan view may be smaller than the dimension S6 of the second opening 41.
  • the dimension S8 of the opening 43a may be, for example, 0.5 ⁇ m or more, 2 ⁇ m or more, or 3 ⁇ m or more.
  • the dimension S8 may be, for example, 5 ⁇ m or less, 10 ⁇ m or less, or 25 ⁇ m or less.
  • the range of the dimension S8 may be determined by a first group consisting of 0.5 ⁇ m, 2 ⁇ m, and 3 ⁇ m, and/or a second group consisting of 5 ⁇ m, 10 ⁇ m, and 25 ⁇ m.
  • the range of the dimension S8 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the dimension S8 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the dimension S8 may be determined by a combination of any two of the values included in the second group described above.
  • the dimension S8 may be, for example, 0.5 ⁇ m or more and 25 ⁇ m or less, 0.5 ⁇ m or more and 10 ⁇ m or less, 0.5 ⁇ m or more and 5 ⁇ m or less, 0.5 ⁇ m or more and 3 ⁇ m or less, 0.5 ⁇ m or more and 2 ⁇ m or less, 2 ⁇ m or more and 25 ⁇ m or less, 2 ⁇ m or more and 10 ⁇ m or less, 2 ⁇ m or more and 5 ⁇ m or less, 2 ⁇ m or more and 3 ⁇ m or less, 3 ⁇ m or more and 25 ⁇ m or less, 3 ⁇ m or more and 10 ⁇ m or less, 3 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 25 ⁇ m or less, 5 ⁇ m or more and 10 ⁇ m or less, or 10 ⁇ m or more and 25 ⁇ m or less.
  • the pitch of the recesses 43 means the distance P2 between the centers of two adjacent recesses 43 in the direction in which the two recesses 43 are arranged.
  • the pitch P2 of the recesses 43 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the pitch P1 of the second opening 41.
  • the pitch P2 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the pitch P1.
  • P2/P1 may be 0.7 or more, 0.8 or more, or 0.9 or more.
  • P2/P1 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of P2/P1 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of P2/P1 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of P2/P1 may be determined by a combination of any two of the values included in the first group.
  • the range of P2/P1 may be determined by a combination of any two of the values included in the second group.
  • the pitch P2 may be 0.7 to 1.3 times the pitch P1, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the number N43 of recesses 43 per unit area in the dummy region 481 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the number N41 of second openings 41 per unit area in the effective region 49.
  • the number N43 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the number N41.
  • N43/N41 may be 0.7 or more, 0.8 or more, or 0.9 or more.
  • N43/N41 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of N43/N41 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of N43/N41 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of N43/N41 may be determined by a combination of any two of the values included in the first group.
  • the range of N43/N41 may be determined by a combination of any two of the values included in the second group.
  • the number N43 may be, for example, 0.7 to 1.3 times the number N41, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the number N43 of recesses 43 per unit area in the dummy region 481 is calculated based on the number of recesses 43 that fall within a region R1 surrounded by a square with sides of 0.5 mm, including any recesses 43 adjacent to the effective region 49 at its corners (see FIG. 5B).
  • the interval S9 between the second opening 41 located on the outermost side of the effective area 49 and the recess 43 closest to the second opening 41 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the pitch P1 of the second openings 41.
  • the interval S9 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the pitch P1.
  • S9/P1 may be 0.7 or more, 0.8 or more, or 0.9 or more.
  • S9/P1 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of S9/P1 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of S9/P1 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of S9/P1 may be determined by a combination of any two of the values included in the first group.
  • the range of S9/P1 may be determined by a combination of any two of the values included in the second group.
  • the interval S9 may be, for example, 0.7 to 1.3 times the pitch P1, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the metal layer 40 may include an alignment mark.
  • the alignment mark of the metal layer 40 may be formed separately from the alignment mark 39 of the first layer 30, or may be formed in place of the alignment mark 39 of the first layer 30.
  • the intermediate layer 50 includes a layer that performs some function for the first layer 30 or the metal layer 40.
  • the intermediate layer 50 includes a stopper layer 51 and a seed layer 52.
  • the intermediate layer 50 is located between the first layer 30 and the metal layer 40.
  • the stopper layer 51 has a function of stopping etching in the process of processing the first layer 30 by etching. Specifically, the stopper layer 51 has resistance to an etchant that etches the first layer 30.
  • the stopper layer 51 may contain, for example, a metal material, an inorganic compound, an organic compound, etc.
  • the metal material is, for example, aluminum, an aluminum alloy, etc.
  • the aluminum alloy includes, for example, aluminum and neodymium.
  • the inorganic compound is, for example, silicon oxide, etc.
  • the organic compound is, for example, a resin.
  • the organic compound may be photosensitive.
  • the stopper layer 51 may include a photoresist. The organic compound does not have to be photosensitive.
  • the thickness of the stopper layer 51 is not particularly limited as long as it can suppress etching of the metal layer 40 in the process of processing the first layer 30.
  • the thickness of the stopper layer 51 may be smaller than the thickness of the metal layer 40, or may be greater than or equal to the thickness of the metal layer 40.
  • the thickness of the stopper layer 51 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more.
  • the thickness of the stopper layer 51 may be, for example, 10 ⁇ m or less, 50 ⁇ m or less, or 100 ⁇ m or less.
  • the range of thickness of the stopper layer 51 may be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and/or a second group consisting of 10 ⁇ m, 50 ⁇ m, and 100 ⁇ m.
  • the range of thickness of the stopper layer 51 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the thickness range of the stopper layer 51 may be determined by a combination of any two of the values included in the first group described above.
  • the thickness range of the stopper layer 51 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness of the stopper layer 51 may be, for example, 5 nm to 100 ⁇ m, 5 nm to 50 ⁇ m, 5 nm to 10 ⁇ m, 5 nm to 75 nm, 5 nm to 50 nm, 50 nm to 100 ⁇ m, 50 nm to 50 ⁇ m, 50 nm to 10 ⁇ m, 50 nm to 75 nm, 75 nm to 100 ⁇ m, 75 nm to 50 ⁇ m, 75 nm to 10 ⁇ m, 10 ⁇ m to 100 ⁇ m, 10 ⁇ m to 50 ⁇ m, or 50 ⁇ m to 100 ⁇ m.
  • the seed layer 52 is conductive when the metal layer 40 is formed by electrolytic plating.
  • the seed layer 52 may contain a conductive material such as a metallic material or a conductive oxide. More specifically, the seed layer 52 may contain copper, nickel, chromium, tantalum, tungsten, or indium tin oxide (ITO).
  • ITO indium tin oxide
  • Such a seed layer 52 may be formed by, for example, an electroless plating method, a sputtering method, a vacuum deposition method, or an ion plating method.
  • the seed layer 52 includes a fifth surface 521 facing the second surface 302 of the first layer 30, and a sixth surface 522 located on the opposite side of the fifth surface 521.
  • the thickness of the seed layer 52 is not particularly limited as long as the metal layer 40 can be formed.
  • the thickness of the seed layer 52 may be smaller than the thickness T2 of the metal layer 40 or may be equal to or larger than the thickness T2 of the metal layer 40.
  • the thickness of the seed layer 52 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more.
  • the thickness of the seed layer 52 may be, for example, 200 nm or less, 250 nm or less, or 300 nm or less.
  • the thickness range of the seed layer 52 may be determined by a first group consisting of 5 nm, 50 nm, and 75 nm, and/or a second group consisting of 200 nm, 250 nm, and 300 nm.
  • the thickness range of the seed layer 52 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the thickness range of the seed layer 52 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the thickness of the seed layer 52 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness of the seed layer 52 may be, for example, 5 nm to 300 nm, 5 nm to 250 nm, 5 nm to 200 nm, 5 nm to 75 nm, 5 nm to 50 nm, 50 nm to 300 nm, 50 nm to 250 nm, 50 nm to 200 nm, 50 nm to 75 nm, 75 nm to 300 nm, 75 nm to 250 nm, 75 nm to 200 nm, 200 nm to 300 nm, 200 nm to 250 nm, or 250 nm to 300 nm.
  • the intermediate layer 50 may include an adhesion layer 53 between the stopper layer 51 and the seed layer 52, which improves the adhesion between the stopper layer 51 and the seed layer 52.
  • the adhesion layer 53 may include titanium, chromium, titanium oxide, chromium nitride, or zinc oxide. Such an adhesion layer 53 may be formed, for example, by a sol-gel method, a sputtering method, or a vacuum deposition method.
  • the thickness of the adhesion layer 53 is not particularly limited, and may be, for example, 5 nm or more, 6 nm or more, or 8 nm or more.
  • the thickness of the adhesion layer 53 may be, for example, 50 nm or less, 60 nm or less, or 70 nm or less.
  • the thickness range of the adhesion layer 53 may be determined by a first group consisting of 5 nm, 6 nm, and 8 nm, and/or a second group consisting of 50 nm, 60 nm, and 70 nm.
  • the thickness range of the adhesion layer 53 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the thickness range of the adhesion layer 53 may be determined by a combination of any two of the values included in the first group described above.
  • the thickness range of the adhesion layer 53 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness of the adhesion layer 53 may be, for example, 5 nm to 70 nm, 5 nm to 60 nm, 5 nm to 50 nm, 5 nm to 8 nm, 5 nm to 6 nm, 6 nm to 70 nm, 6 nm to 60 nm, 6 nm to 50 nm, 6 nm to 8 nm, 8 nm to 70 nm, 8 nm to 60 nm, 8 nm to 50 nm, 50 nm to 70 nm, 50 nm to 60 nm, or 60 nm to 70 nm.
  • the intermediate layer 50 is positioned so as not to overlap the second opening 41 in a plan view. This makes it possible to prevent a shadow caused by the intermediate layer 50 from being generated.
  • the intermediate layer 50 may include an alignment mark.
  • the alignment mark of the intermediate layer 50 may be formed separately from the alignment mark of the first layer 30 or the metal layer 40, or may be formed in place of the alignment mark of the first layer 30 or the metal layer 40.
  • each layer the dimensions of each component, the spacing, etc. can be measured by observing an image of the cross section of the mask 20 using a scanning electron microscope.
  • a first layer 30 is prepared.
  • a silicon wafer may be used as the first layer 30.
  • a first surface 301 and a second surface 302 of the first layer 30 may be polished to a mirror finish.
  • the arithmetic mean roughness Ra of the first surface 301 and the second surface 302 may be 1.5 nm or less, or 1.0 nm or less.
  • the surface orientation of the first surface 301 and the second surface 302 may be (100), (110), or the like.
  • the second surface 302 of the first layer 30 includes a first region 305 and a second region 306.
  • the first region 305 is a region corresponding to the first opening 31 described above.
  • the second region 306 is a region corresponding to the outer region 35 and inner region 36 described above.
  • the second region 306 surrounds the first region 305.
  • an intermediate layer 50 is formed on the second surface 302 of the first layer 30 to produce a laminate 55 including the first layer 30 and the intermediate layer 50.
  • a stopper layer 51 may be formed by a vacuum film formation method such as a sputtering method.
  • the adhesion layer 53 may be formed by a sol-gel method, a sputtering method, or a vacuum deposition method.
  • the seed layer 52 may be formed by an electroless plating method, a sputtering method, a vacuum deposition method, or an ion plating method.
  • the sixth surface 522 of the seed layer 52 includes a third region 525 and a fourth region 526.
  • the third region 525 is a region corresponding to the effective region 49 of the metal layer 40 described above.
  • the fourth region 526 is a region corresponding to the dummy region 481 of the metal layer 40 described above.
  • the fourth region 526 surrounds the third region 525.
  • the dimensions of the third region 525 and the fourth region 526 may be the same as the dimensions of the effective region 49 and the dummy region 481, respectively.
  • the width of the fourth region 526 may be 0.6 mm or more.
  • the intermediate layer 50 is formed to cover at least the first region 305.
  • the intermediate layer 50 may also cover the second region 306.
  • the intermediate layer 50 may be formed over the entire second surface 302.
  • a resist pattern formation process is carried out to form a plurality of resist protrusions 60 on the sixth surface 522 of the seed layer 52.
  • a plurality of resist protrusions 60 protruding from the sixth surface 522 are formed in the third region 525 and the fourth region 526.
  • FIG. 9B is an enlarged view of the area surrounded by the two-dot chain line in FIG. 9A.
  • FIG. 9C is a plan view of the seed layer 52 on which a plurality of resist protrusions 60 are formed.
  • FIG. 9D is an enlarged view of the area surrounded by the two-dot chain line in FIG. 9C.
  • a plurality of resist protrusions 60 are formed on the third region 525 and the fourth region 526 in correspondence with the second opening 41 and the recess 43.
  • the resist protrusions 60 are, for example, photoresists.
  • the photoresists are positive resists.
  • positive resists include iP5700, PMER-P-LA900PM, and PMER-P7100 manufactured by Tokyo Ohka Kogyo Co., Ltd., and NPR9700 manufactured by Nagase ChemteX Co., Ltd.
  • the height T4 of the resist convex portion 60 is defined as the distance between the top of the resist convex portion 60 and the sixth surface 522.
  • the height T4 is greater than the thickness T2 of the metal layer 40.
  • the height T4 may be, for example, 4 ⁇ m or more, 5 ⁇ m or more, or 6 ⁇ m or more.
  • the height T4 may be, for example, 7 ⁇ m or less, 8 ⁇ m or less, or 9 ⁇ m or less.
  • the range of the height T4 may be determined by a first group consisting of 4 ⁇ m, 5 ⁇ m, and 6 ⁇ m, and/or a second group consisting of 7 ⁇ m, 8 ⁇ m, and 9 ⁇ m.
  • the range of the height T4 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the height T4 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the height T4 may be determined by a combination of any two of the values included in the second group described above.
  • the height T4 may be, for example, 4 ⁇ m or more and 9 ⁇ m or less, 4 ⁇ m or more and 8 ⁇ m or less, 4 ⁇ m or more and 7 ⁇ m or less, 4 ⁇ m or more and 6 ⁇ m or less, 4 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 9 ⁇ m or less, 5 ⁇ m or more and 8 ⁇ m or less, 5 ⁇ m or more and 7 ⁇ m or less, 5 ⁇ m or more and 6 ⁇ m or less, 6 ⁇ m or more and 9 ⁇ m or less, 6 ⁇ m or more and 8 ⁇ m or less, 6 ⁇ m or more and 7 ⁇ m or less, 7 ⁇ m or more and 9 ⁇ m or less, 7 ⁇ m or more and 8 ⁇ m or less, or 8 ⁇ m or more and 9 ⁇ m or less.
  • the fourth wall surface 61 of the resist convex portion 60 has a tapered surface 61a that narrows inward as it moves away from the sixth surface 522.
  • the shape of the resist convex portion 60 may be a truncated pyramid or a truncated cone as a whole.
  • the angle ⁇ 2 between the tapered surface 61a formed in the third region 525 and the sixth surface 522 of the seed layer 52 may be the same as the angle ⁇ 1 between the tapered surface 42a of the second opening 41 and the third surface 401.
  • the angle ⁇ 2 may be, for example, 50° or more, 55° or more, 60° or more, or 65° or more.
  • the angle ⁇ 2 may be, for example, 75° or less, 80° or less, 85° or less, or less than 90°.
  • the range of the angle ⁇ 2 may be determined by a first group consisting of 50°, 55°, 60°, and 65°, and/or a second group consisting of 75°, 80°, 85°, and 90°.
  • the range of the angle ⁇ 2 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the angle ⁇ 2 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the angle ⁇ 2 may be determined by a combination of any two of the values included in the second group described above.
  • the angle ⁇ 2 may be, for example, 50° or more and less than 90°, 50° or more and less than 85°, 50° or more and less than 80°, 50° or more and less than 75°, 50° or more and less than 65°, 50° or more and less than 60°, 50° or more and less than 55°, 55° or more and less than 90°, 55° or more and less than 85°, 55° or more and less than 80°, 55° or more and less than 75°, 55° or more and less than 65°, 55° or more and less than 60°, or 60° or more and less than 90°.
  • the angle ⁇ 3 between the tapered surface 61a of the resist convex portion 60 formed in the fourth region 526 and the sixth surface 522 of the seed layer 52 may be the same as the angle ⁇ 1 or may be different.
  • the resist pattern formation process includes, for example, a first resist layer formation process, an exposure process, and a development process.
  • the first resist layer forming process is a process of forming a first resist layer on the sixth surface 522.
  • the first resist layer forming process includes, for example, a process of applying a liquid resist to the sixth surface 522.
  • the first resist layer forming process may include a process of heating the liquid resist on the sixth surface 522.
  • the first resist layer is formed by drying the liquid resist.
  • the first resist layer is irradiated with light so that in the subsequent development process, the first resist layer remains in the portions of the third region 525 and the fourth region 526 that correspond to the second opening 41 and the recess 43, and the first resist layer in the other portions on the sixth surface 522 is removed.
  • the first resist layer is a positive resist
  • light is irradiated onto the first resist layer in the above-mentioned other portions on the sixth surface 522.
  • the light is, for example, i-rays.
  • the i-rays are spectral lines of mercury that have a wavelength of 365 nm.
  • the exposure amount may be, for example, 150 mJ/cm 2 or more, 175 mJ/cm 2 or more, or 200 mJ/cm 2 or more.
  • the exposure amount may be, for example, 300 mJ/cm 2 or less, 350 mJ/cm 2 or less, or 400 mJ/cm 2 or less.
  • the range of the exposure amount may be determined by a first group consisting of 150 mJ/cm 2 , 175 mJ/cm 2 , and 200 mJ/cm 2 , and/or a second group consisting of 300 mJ/cm 2 , 350 mJ/cm 2 , and 400 mJ/cm 2.
  • the range of the exposure amount may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the exposure amount may be determined by a combination of any two of the values included in the first group described above.
  • the range of exposure doses may be defined by a combination of any two of the values included in the second group mentioned above.
  • the exposure dose may be, for example, 150 mJ/cm 2 or more and 400 mJ/cm 2 or less, 150 mJ/cm 2 or more and 350 mJ/cm 2 or less, 150 mJ/cm 2 or more and 300 mJ/cm 2 or less, 150 mJ/cm 2 or more and 200 mJ/cm 2 or less, 150 mJ/cm 2 or more and 175 mJ/cm 2 or less, 175 mJ/cm 2 or more and 400 mJ/cm 2 or less, 175 mJ/cm 2 or more and 350 mJ/cm 2 or less, 175 mJ/cm 2 or more and 300 mJ/cm 2 or less, 175 mJ/cm 2 or more and 200 mJ/cm 2 or less, 200 mJ/cm 2 or more and 400 mJ/cm 2 or less, or 200 mJ/cm 2 or more and 350 mJ/cm 2
  • the focal position may be the sixth surface 522 of the seed layer 52, or may be shifted from the sixth surface 522.
  • the focal position may be a position displaced by SH ⁇ m from the sixth surface 522 toward the fifth surface 521.
  • the displacement amount SH may be, for example, 1 ⁇ m or more, 2 ⁇ m or more, or 3 ⁇ m or more.
  • the displacement amount SH may be, for example, 6 ⁇ m or less, 8 ⁇ m or less, or 10 ⁇ m or less.
  • the range of the displacement amount SH may be determined by a first group consisting of 1 ⁇ m, 2 ⁇ m, and 3 ⁇ m, and/or a second group consisting of 6 ⁇ m, 8 ⁇ m, and 10 ⁇ m.
  • the range of the displacement amount SH may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of the displacement amount SH may be determined by a combination of any two of the values included in the first group.
  • the range of the displacement amount SH may be determined by a combination of any two of the values included in the second group.
  • the displacement SH may be, for example, 1 ⁇ m to 10 ⁇ m, 1 ⁇ m to 8 ⁇ m, 1 ⁇ m to 6 ⁇ m, 1 ⁇ m to 3 ⁇ m, 1 ⁇ m to 2 ⁇ m, 2 ⁇ m to 10 ⁇ m, 2 ⁇ m to 8 ⁇ m, 2 ⁇ m to 6 ⁇ m, 2 ⁇ m to 3 ⁇ m, 3 ⁇ m to 10 ⁇ m, 3 ⁇ m to 8 ⁇ m, 3 ⁇ m to 6 ⁇ m, 6 ⁇ m to 10 ⁇ m, 6 ⁇ m to 8 ⁇ m, 8 ⁇ m to 10 ⁇ m.
  • the dimensions and cross-sectional shape of the resist protrusion 60 can be controlled.
  • the dimensions and cross-sectional shape of the second opening 41 can be controlled.
  • the angle ⁇ 1 of the tapered surface 42a of the second opening 41 can be controlled.
  • the first resist layer is developed to obtain a plurality of resist protrusions 60 in the third region 525 and the fourth region 526.
  • the developer contains, for example, TMAH (tetramethylammonium hydroxide).
  • a first plating process is performed.
  • a first metal layer 411 is formed on the sixth surface 522 by electrolytic plating.
  • a plating power source is connected to the seed layer 52, and the laminate 55 is immersed in a plating bath containing a plating solution.
  • metal is deposited in the gaps between the multiple resist convex portions 60 on the sixth surface 522, and the first metal layer 411 is formed.
  • the components of the plating solution are determined so that the nickel content in the metal layer 40 is 30 mass% or more and 54 mass% or less.
  • a mixed solution of a solution containing a nickel compound and a solution containing an iron compound can be used as the plating solution.
  • a mixed solution of a solution containing nickel sulfamate or nickel bromide and a solution containing ferrous sulfamate can be used.
  • the thickness T5 of the first metal layer 411 is smaller than the height T4 of the resist convex portion 60.
  • the thickness T5 is smaller than the thickness T2 of the metal layer.
  • the thickness T5 may be, for example, 2 ⁇ m or more, 3 ⁇ m or more, or 4 ⁇ m or more.
  • the thickness T5 may be, for example, 5 ⁇ m or less, 6 ⁇ m or less, or 7 ⁇ m or less.
  • the range of the thickness T5 may be determined by a first group consisting of 2 ⁇ m, 3 ⁇ m, and 4 ⁇ m, and/or a second group consisting of 5 ⁇ m, 6 ⁇ m, and 7 ⁇ m.
  • the range of the thickness T5 may be determined by a combination of any one of the values included in the first group described above and any one of the values included in the second group described above.
  • the range of the thickness T5 may be determined by a combination of any two of the values included in the first group described above.
  • the range of the thickness T5 may be determined by a combination of any two of the values included in the second group described above.
  • the thickness T5 may be, for example, 2 ⁇ m or more and 7 ⁇ m or less, 2 ⁇ m or more and 6 ⁇ m or less, 2 ⁇ m or more and 5 ⁇ m or less, 2 ⁇ m or more and 4 ⁇ m or less, 2 ⁇ m or more and 3 ⁇ m or less, 3 ⁇ m or more and 7 ⁇ m or less, 3 ⁇ m or more and 6 ⁇ m or less, 3 ⁇ m or more and 5 ⁇ m or less, 3 ⁇ m or more and 4 ⁇ m or less, 4 ⁇ m or more and 7 ⁇ m or less, 4 ⁇ m or more and 6 ⁇ m or less, 4 ⁇ m or more and 5 ⁇ m or less, 5 ⁇ m or more and 7 ⁇ m or less, 5 ⁇ m or more and 6 ⁇ m or less, or 6 ⁇ m or more and 7 ⁇ m or less.
  • the thickness T5 can be controlled by the current value from the plating power source, the time of current flow to the plating power source, the
  • the first metal layer 411 has a number of openings 41a formed therein that correspond to the number of resist protrusions 60.
  • the shape and dimensions of the openings 41a correspond to the shape and dimensions of the tapered surfaces 61a of the corresponding resist protrusions 60.
  • the thickness T5 of the first metal layer 411 in the third region 525 can be made more uniform compared to the case where the resist convex portion 60 is formed only in the third region 525.
  • the resist convex portion 60 is also formed around the third region 525, so that the difference between the current density at the outer periphery of the third region 525 during the first plating process and the current density at the center of the third region 525 becomes smaller.
  • the influence of the region outside the third region 525 where the resist convex portion 60 does not exist on the current density at the outer periphery of the third region 525 can be reduced. This allows the dimensions of the openings 41a of the first metal layer 411 in the third region 525 to be more uniform, compared to when the resist protrusions 60 are formed only in the third region 525.
  • the density of the resist protrusions 60 in the third region 525 is approximately the same as the density of the resist protrusions 60 in the fourth region 526.
  • the number N526 of resist protrusions 60 per unit area in the fourth region 526 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the number N525 of resist protrusions 60 per unit area in the third region 525.
  • the number N526 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the number N525.
  • N526/N525 may be, for example, 0.7 or more, 0.8 or more, or 0.9 or more.
  • N526/N525 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of N526/N525 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of N526/N525 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of N526/N525 may be determined by a combination of any two of the values included in the first group.
  • the range of N526/N525 may be determined by a combination of any two of the values included in the second group.
  • Number N526 may be, for example, 0.7 to 1.3 times, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the number of resist protrusions 60 per unit area in the third region 525 is calculated based on the number of resist protrusions 60 that fall within a region R2 surrounded by a square with sides of 0.5 mm that includes any resist protrusion 60 adjacent to the fourth region 526 at its corner (see FIG. 9D).
  • the pitch P4 of the resist convex portion 60 in the fourth region 526 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the pitch P3 of the resist convex portion 60 in the third region 525.
  • the pitch P4 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the pitch P3.
  • P4/P3 may be, for example, 0.7 or more, 0.8 or more, or 0.9 or more.
  • P4/P3 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of P4/P3 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of P4/P3 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of P4/P3 may be determined by a combination of any two of the values included in the first group.
  • the range of P4/P3 may be determined by a combination of any two of the values included in the second group.
  • the pitch P4 may be, for example, 0.7 to 1.3 times the pitch P3, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the pitches P3 and P4 of the resist protrusions 60 in each region 525 and 526 refer to the distance between the centers of two adjacent resist protrusions 60 in the direction in which the two resist protrusions 60 are aligned in each region 525 and 526.
  • pitch P3 is equal to pitch P1
  • pitch P4 is equal to pitch P2.
  • the interval S10 between the resist convex portion 60 located on the outermost side of the third region 525 and the resist convex portion 60 in the fourth region 526 closest to the resist convex portion 60 is approximately the same as the pitch P3 of the resist convex portions 60 in the third region 525.
  • the interval S10 may be, for example, 0.7 times or more, 0.8 times or more, or 0.9 times or more of the pitch P3.
  • the interval S10 may be, for example, 1.1 times or less, 1.2 times or less, or 1.3 times or less of the pitch P3.
  • S10/P3 may be, for example, 0.7 or more, 0.8 or more, or 0.9 or more.
  • S10/P3 may be, for example, 1.1 or less, 1.2 or less, or 1.3 or less.
  • the range of S10/P3 may be determined by a first group consisting of 0.7, 0.8, and 0.9, and/or a second group consisting of 1.1, 1.2, and 1.3.
  • the range of S10/P3 may be determined by a combination of any one of the values included in the first group and any one of the values included in the second group.
  • the range of S10/P3 may be determined by a combination of any two of the values included in the first group.
  • the range of S10/P3 may be determined by a combination of any two of the values included in the second group.
  • the interval S10 may be, for example, 0.7 to 1.3 times the pitch P3, 0.7 to 1.2 times, 0.7 to 1.1 times, 0.7 to 0.9 times, 0.7 to 0.8 times, 0.8 to 1.3 times, 0.8 to 1.2 times, 0.8 to 1.1 times, 0.8 to 0.9 times, 0.9 to 1.3 times, 0.9 to 1.2 times, 0.9 to 1.1 times, 1.1 to 1.3 times, 1.1 to 1.2 times, or 1.2 to 1.3 times.
  • the resist convex portions 60 are arranged in a uniform arrangement pattern from the third region 525 to the fourth region 526.
  • the shape and dimensions of the resist convex portions 60 in the fourth region 526 are the same as those of the resist convex portions 60 in the third region 525. This makes it easier to control the thickness of the first metal layer 411 in the third region 525 to be more uniform.
  • the arrangement pattern of the resist convex portions 60 in the third region 525 may be different from the arrangement pattern of the resist convex portions 60 in the fourth region 526.
  • the shape and dimensions of the resist convex portions 60 in the third region 525 may be different from the shape and dimensions of the resist convex portions 60 in the fourth region 526.
  • the resist convex portions 60 formed in the fourth region 526 may not have a tapered surface 61a. In other words, the resist convex portions 60 formed in the fourth region 526 may be prismatic or cylindrical.
  • the resist convex portions 60 formed in the fourth region 526 are removed.
  • the resist convex portions 60 formed in the fourth region 526 may be removed by exposing and developing the resist convex portions 60 formed in the fourth region 526.
  • the developer may contain, for example, TMAH (tetramethylammonium hydroxide).
  • the resist convex portions 60 formed in the fourth region 526 may be removed by bringing a resist processing liquid into contact with only the resist convex portions 60 formed in the fourth region 526.
  • the resist processing liquid may contain, for example, N-methyl-2-pyrrolidone.
  • a second plating process is performed.
  • a second metal layer 412 is formed on the first metal layer 411 by electrolytic plating.
  • the opening 41a of the first metal layer 411 located in the fourth region 526 is blocked by the second metal layer 412, and a bottom 40a is formed in the opening 41a.
  • a recess 43 having a bottom 40a is formed in the fourth region 526.
  • the second metal layer 412 forms the bottom surface 44 of the recess 43.
  • the second metal layer 412 may cover the first metal layer 411 in the third region 525.
  • the first metal layer 411 and the second metal layer 412 form the metal layer 40.
  • the second plating process may be performed in the same manner as the first plating process.
  • the plating solution used in the second plating process may be different from the plating solution used in the first plating process.
  • the plating solution used in the first plating process and the plating solution used in the second plating process may be appropriately adjusted from the viewpoint of suppressing the occurrence of defects such as pinholes and deformation in the first metal layer 411 and the second metal layer 412, or from the viewpoint of controlling the flatness, smoothness, film stress, or thermal expansion coefficient of the first metal layer 411 and the second metal layer 412.
  • the thickness T3 of the second metal layer 412 may be smaller than the thickness T5 of the first metal layer. Furthermore, the thickness T3 is determined so that the sum of the thickness T3 and the thickness T5 of the first metal layer (i.e., the thickness T2 of the metal layer) is smaller than the height T4 of the resist protrusion 60. As described above, the thickness T3 may be, for example, 0.5 ⁇ m or more, 0.75 ⁇ m or more, or 1.0 ⁇ m or more. The thickness T3 may be, for example, 1.0 ⁇ m or less, 1.25 ⁇ m or less, or 1.5 ⁇ m or less.
  • the thickness T3 By setting the thickness T3 to 0.5 ⁇ m or more, it is possible to suppress the occurrence of defects such as pinholes and deformations in the metal layer 40. Furthermore, by setting the thickness T3 to 1.5 ⁇ m or less, it is possible to suppress the thickness T3 of the second metal layer 412 in the third region 525 from becoming non-uniform. In particular, it is possible to prevent the thickness T3 of the second metal layer 412 at the outer periphery of the third region 525 from becoming smaller than the thickness T3 of the second metal layer 412 at the center of the third region 525.
  • the thickness T3 of the second metal layer 412 can also be controlled by the current value from the plating power source, the time of current flow to the plating power source, the time of immersion in the plating solution, etc.
  • a resist protrusion 60 is disposed within the opening 41a of the first metal layer 411.
  • a plurality of openings 41b corresponding to the plurality of resist protrusions 60 are formed in the second metal layer 412.
  • the opening 41a of the first metal layer 411 and the opening 41b of the second metal layer 412 form a second opening 41 in the metal layer 40.
  • the shape and dimensions of the second opening 41 correspond to the shape and dimensions of the tapered surface 60a of the corresponding resist protrusion 60.
  • the resist convex portion 60 is not disposed within the opening 41a of the first metal layer 411.
  • the second metal layer 412 may also be formed on the wall surface that defines the opening 41a of the first metal layer 411.
  • the dimension S8 of the opening 43a of the recess 43 may be smaller than the dimension of the opening 41a of the first metal layer 411.
  • a metal layer 40 is formed having an effective area 49 in which the second opening 41 is formed, and a dummy area 481 in which the recess 43 is formed.
  • the precision of the shape and dimensions of the second opening 41 can be increased.
  • the angle ⁇ 1 between the second wall surface 42 and the fourth surface 402 has high precision. This allows the precision of the position, shape, etc. of the deposition layer described above to be increased.
  • the resist protrusions 60 in the third region 525 are removed.
  • a resist processing liquid is brought into contact with the resist protrusions 60 in the third region 525.
  • the resist processing liquid contains, for example, N-methyl-2-pyrrolidone.
  • the resist protrusions 60 may be removed by irradiating the resist protrusions 60 in the third region 525 with oxygen plasma.
  • a protective layer 65 is formed on the fourth surface 402 of the metal layer 40.
  • the protective layer 65 may be a resist layer.
  • the protective layer 65 may be formed by applying a resist liquid to the metal layer 40 and solidifying it.
  • a second resist formation process is carried out to partially form a second resist layer 70 on the first surface 301.
  • a resist opening 71 is formed in the second resist layer 70.
  • the resist opening 71 corresponds to the first opening 31 formed in the first layer 30.
  • the resist opening 71 overlaps the first region 305 in a plan view.
  • the second resist layer 70 may be, for example, a photoresist.
  • the second resist layer 70 is formed on the first surface 301 by first coating the first surface 301 with a liquid resist material. After coating, a step of heating the second resist layer 70 may be performed. Then, a photolithography process is performed in which the second resist layer 70 is exposed and developed. This allows resist openings 71 to be formed in the second resist layer 70.
  • the second resist layer 70 may be a silicon oxide film partially formed on the first surface 301.
  • the silicon oxide film is formed, for example, by partially performing a thermal oxidation process on the first surface 301.
  • the silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the metal layer 40 are laminated on the first layer 30.
  • an etching process is performed to etch the first layer 30 on the first surface 301 side. As shown in FIG. 16, the etching process forms a first opening 31 in the first layer 30, penetrating from the first surface 301 to the second surface 302. The first opening 31 may reach the stopper layer 51.
  • the etching process may be dry etching using an etching gas.
  • the etching gas is an example of the etchant described above. Since the stopper layer 51 is resistant to the etchant, the etching can be prevented from progressing to the metal layer 40, as shown in FIG. 16.
  • the etching process is carried out, for example, as follows. That is, an etching gas is introduced into a chamber. A voltage is applied to the space in the chamber to convert the etching gas into plasma. Radicals, ions, etc. in the plasma pass through the resist opening 71 and collide with the first surface 301, thereby forming a first opening 31 in the first layer 30, as shown in FIG. 16.
  • the etching gas is, for example, SF6 gas.
  • a protective film 75 may be formed on the wall surface 311a and bottom surface 311b of the opening being formed in the first layer 30.
  • the dry etching process and the protective film forming process are alternately repeated until the first opening 31 reaches the intermediate layer 50. This allows the first opening 31 to be formed, penetrating from the first surface 301 to the second surface 302.
  • the protective film 75 can be formed, for example, by switching the gas introduced into the chamber from an etching gas to a raw material gas.
  • the raw material gas is, for example, C 4 F 8 gas.
  • the raw material gas is turned into plasma by applying a voltage to the space in the chamber. Radicals in the plasma react with the wall surface 311 a and the bottom surface 311 b of the opening being formed in the first layer 30, so that the protective film 75 can be formed on the wall surface 311 a and the bottom surface 311 b, as shown in FIG. 17 .
  • a protective film removal process may be performed to remove the protective film 75.
  • a protective film treatment liquid is supplied to the first opening 31 of the first layer 30.
  • the first layer 30 may be immersed in a tank containing the protective film treatment liquid.
  • the protective film treatment liquid contains, for example, hydrofluoroether.
  • an intermediate layer removal process is carried out to remove the intermediate layer 50.
  • an etchant for the intermediate layer 50 is supplied to the first opening 31. This makes it possible to remove the intermediate layer 50 that overlaps the first opening 31 in a plan view, as shown in FIG. 18.
  • the etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or may be wet etching using an acidic etching solution.
  • the first opening 31 is formed in the first layer 30, and the intermediate layer 50 is then removed, so that the second opening 41 in the effective region 49 communicates with the first opening 31.
  • the recess 43 formed in the dummy region 481 does not communicate with the first opening 31 due to the presence of the bottom 40a formed by the second metal layer 412.
  • a protective layer removing step is performed to remove the protective layer 65.
  • a resist processing liquid is supplied to the protective layer 65.
  • the resist processing liquid contains, for example, N-methyl-2-pyrrolidone.
  • the protective layer 65 may be removed by irradiating the protective layer 65 with oxygen plasma.
  • the protective layer 65 is a silicon oxide film
  • the resist processing liquid contains, for example, hydrofluoric acid.
  • the protective layer 65 may be removed by dry etching using CF4 gas or the like.
  • a second resist removal process may be performed to remove the second resist layer 70.
  • the second resist removal process may be performed in the same manner as the protective layer removal process.
  • the second resist layer 70 may be removed together with the protective layer 65 in the protective layer removal process.
  • a substrate 110 on which a first electrode 120 is formed is prepared.
  • the substrate 110 may be a silicon wafer.
  • the first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum film-forming method or the like, and then patterning the conductive layer by a photolithography method or the like. The patterning of the conductive layer may be performed using an apparatus that performs a semiconductor manufacturing process.
  • An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.
  • the organic layer 130 including the first organic layer 130A, the second organic layer 130B, etc. is formed on the first electrode 120.
  • the first organic layer 130A is formed by a deposition method using a first mask 20.
  • the first mask 20 has a second opening 41 corresponding to the first organic layer 130A.
  • the second organic layer 130B is formed by a deposition method using a second mask 20.
  • the second mask 20 has a second opening 41 corresponding to the second organic layer 130B.
  • a third organic layer is formed by a deposition method using a third mask 20.
  • the third mask 20 has a second opening 41 corresponding to the third organic layer.
  • the second electrode 140 is formed on the organic layer 130.
  • the second electrode 140 may be formed on the entire first surface 111 by a vacuum film-forming method or the like.
  • the second electrode 140 may be formed by a deposition method using a mask 20, similar to the organic layer 130.
  • a sealing layer or the like (not shown) may be formed on the second electrode 140. In this manner, the organic device 100 can be obtained.
  • a plurality of organic devices 100 may be formed on one substrate 110.
  • One organic device 100 may correspond to one first opening 31 of the mask 20.
  • a step of cutting the substrate 110 may be carried out.
  • the substrate 110 is cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. In this way, a plurality of organic devices 100 can be obtained.
  • the effect of the mask 20 will be explained when forming the organic layer 130, the second electrode 140, etc. by a vapor deposition method using the mask 20.
  • the mask 20 includes a first layer 30 that contains silicon or a silicon compound. Therefore, when the substrate 110 contains silicon, it is possible to suppress the occurrence of a difference between the thermal expansion occurring in the substrate 110 and the thermal expansion occurring in the mask 20. This makes it possible to suppress the deterioration of the accuracy of the position, shape, etc. of the deposition layers such as the organic layer 130 and the second electrode 140 caused by the thermal expansion of the mask 20. Therefore, it is possible to provide an organic device 100 with a high element density.
  • the mask 20 includes a metal layer 40 including a plurality of second openings 41.
  • the thickness T2 of the metal layer 40 can be reduced. This makes it possible to suppress the occurrence of shadows in the deposition process.
  • the thickness of the first layer 30 can be appropriately ensured while suppressing shadows. This makes it possible to suppress damage to the first layer 30 when handling the mask 20, for example, when moving the mask.
  • the metal layer 40 in which the second openings 41 are formed can be attracted toward the substrate 110 by the magnetic force of the magnet 5. This makes it possible to reduce or eliminate the gap between the mask 20 and the substrate 110. This makes it possible to suppress the occurrence of shadows in the deposition process.
  • the angle ⁇ 1 between the fourth surface 402 of the metal layer 40 and the second wall surface 42 has high precision, which can improve the precision of the position, shape, etc. of the deposition layer.
  • the metal layer 40 is bonded to the first layer 30 via the intermediate layer 50, even if the first layer 30 is damaged, fragments of the first layer 30 can be prevented from scattering.
  • the peripheral region 48 of the metal layer 40 of the mask 20 is fixed to the second surface 302 of the first layer 30. This prevents the effective region 49 of the metal layer 40 from bending. This prevents the position of the second opening 41 formed in the effective region 49 from changing.
  • the metal layer 40 is formed by electrolytic plating, but this is not limited thereto.
  • the metal layer 40 may be formed by electroless plating.
  • the intermediate layer 50 may not have the stopper layer 51 and the adhesion layer 53.
  • the seed layer 52 may be in contact with the second surface 302 of the first layer 30.
  • the mask 20 may not include the intermediate layer 50.
  • the metal layer 40 may be in contact with the second surface 302 of the first layer 30.
  • the fourth surface 402 of the metal layer 40 may be planarized by polishing. Planarizing the fourth surface 402 of the metal layer 40 can suppress the occurrence of gaps between the metal layer 40 and the components on the substrate 110. This can also contribute to suppressing shadows. Methods that can be used to planarize the fourth surface 402 of the metal layer 40 include mechanical polishing, chemical mechanical polishing, wet etching, dry etching, and combinations of these.
  • a part of the peripheral region 48 is a dummy region 481, but this is not limited to the above. As shown in Figs. 20 and 21, all or almost all of the peripheral region 48 may be a dummy region 481.
  • Fig. 20 is a view of the mask 20 according to this modification from the side of the emission surface 202.
  • Fig. 21 is a view of a part of a cross section taken along line XXI-XXI of the mask 20 in Fig. 20.
  • dummy regions 481 are formed in all areas of the peripheral region 48 except for the area that overlaps with the alignment mark 39 and its surrounding area in a plan view.
  • the second metal layer 412 is formed in the entire region of the dummy region 481, but this is not limited to this.
  • the second metal layer 412 may be formed only in a portion of the region of the dummy region 481.
  • only some of the recesses 43 formed in the dummy region 481 may have a bottom 40a formed by the second metal layer 412.
  • only the recesses 43 of the dummy region 481 that overlap the first opening 31 in a planar view may have a bottom 40a formed by the second metal layer 412.
  • the bottom surface 44 of the other recesses 43 may be formed by the intermediate layer 50 or the first layer 30.
  • the metal layer 40 may not include the second metal layer 412.
  • the second metal layer 412 may not be formed on the first metal layer 411.
  • the first opening 31 and the recess 43 do not communicate with each other, so when the mask 20 is used to form a deposition layer on the substrate 110, the deposition material from the deposition source 6 is prevented from passing through the recess 43 and adhering to the substrate 110.
  • the second plating process step does not need to be performed.
  • the recesses 43 may extend over the entire thickness T2 of the metal layer 40.
  • the second plating process step may be performed only on a portion of the fourth region 526.
  • the second plating process step may be performed only on the region of the fourth region 526 that overlaps with the first region 305 in a plan view.
  • FIG. 23 is a diagram showing an example of an apparatus 200 including an organic device 100.
  • the apparatus 200 includes a substrate 110 and an organic layer 130.
  • the organic layer 130 is a layer formed by a deposition method using a mask 20.
  • the apparatus 200 is, for example, a smartphone.
  • the apparatus 200 may also be a tablet terminal, a wearable terminal, or the like.
  • the wearable terminal is, for example, a smart glass, a head-mounted display, or the like.

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JP7730479B1 (ja) 2024-05-24 2025-08-28 大日本印刷株式会社 マスク、蒸着方法及びデバイスの製造方法
JP7773717B1 (ja) 2024-05-24 2025-11-20 大日本印刷株式会社 マスク及び有機デバイスの製造方法
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JP7730479B1 (ja) 2024-05-24 2025-08-28 大日本印刷株式会社 マスク、蒸着方法及びデバイスの製造方法
JP7773717B1 (ja) 2024-05-24 2025-11-20 大日本印刷株式会社 マスク及び有機デバイスの製造方法
WO2025243852A1 (ja) * 2024-05-24 2025-11-27 大日本印刷株式会社 マスク及び有機デバイスの製造方法
WO2025243840A1 (ja) * 2024-05-24 2025-11-27 大日本印刷株式会社 マスク及び有機デバイスの製造方法
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JP2025177938A (ja) * 2024-05-24 2025-12-05 大日本印刷株式会社 マスク及び有機デバイスの製造方法
JP2025177932A (ja) * 2024-05-24 2025-12-05 大日本印刷株式会社 マスク及び有機デバイスの製造方法

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