WO2024125560A1 - Ensemble série photovoltaïque à film mince et son procédé de préparation - Google Patents

Ensemble série photovoltaïque à film mince et son procédé de préparation Download PDF

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WO2024125560A1
WO2024125560A1 PCT/CN2023/138501 CN2023138501W WO2024125560A1 WO 2024125560 A1 WO2024125560 A1 WO 2024125560A1 CN 2023138501 W CN2023138501 W CN 2023138501W WO 2024125560 A1 WO2024125560 A1 WO 2024125560A1
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electrode
transport layer
thin
electron transport
hole transport
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李美珍
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李美珍
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • the present invention belongs to the field of semiconductor technology, and in particular relates to a thin-film photovoltaic series assembly and a preparation method thereof.
  • organic-inorganic hybrid perovskite cells PSCs
  • organic solar cells OLEDs
  • polymer solar cells PLCs
  • advantages such as low cost, easy manufacturing, low carbon emissions during the production process, and the ability to be made into flexible devices are unmatched by crystalline silicon cells.
  • organic-inorganic hybrid perovskite cells are widely considered to be the next generation of thin-film photovoltaic cells that are most likely to replace crystalline silicon cells.
  • the new generation of thin-film photovoltaic cell devices containing organic materials, represented by perovskite solar cells, can be mainly divided into two categories, namely the conventional structure (n-i-p) and the inverted structure (p-i-n).
  • the absorption layer (i) is sandwiched by the charge transport layer to form a sandwich structure.
  • n is the electron transport layer (ETL for short)
  • p is the hole transport layer (HTL for short).
  • Some structures omit the p or n layer and use electrodes instead or dope the absorption layer (i) with p or n type.
  • the electrode deposition process is usually evaporation and magnetron sputtering, which is used to connect the back electrode of the subcell (which can be called electrode B) and the top electrode of the adjacent subcell (which can be called electrode A). This is a mature interconnection or series connection method that is widely used.
  • the defects of this interconnection or series connection method include: 1) The area of the dead zone usually accounts for about 5% or more of the total power generation area, and the geometric fill factor (GFF) of the component will not exceed 95.5% (see reference: SH Reddy, F. Di Giacomo, and A. Di Carlo, "Low-Temperature-Processed Stable Perovskite Solar Cells and Modules: A Comprehensive Review,” Adv. Energy Mater., vol. 12, no. 13, pp.
  • Evaporation and magnetron sputtering are non-conformal deposition processes, so the sidewalls of the cell material that are (laser) cut cannot be effectively covered by the electrode layer, resulting in a large series resistance (reduced component fill factor/efficiency); while conformal deposition processes such as atomic layer deposition (ALD) are too expensive and can damage device materials; 3) If the area where the back electrode layer contacts the top electrode layer is too small, it will result in a large contact resistance (resulting in a decrease in component fill factor/efficiency), while if it is too large, it will increase the dead zone area; 4) The sidewalls of the cell material that are (laser) etched will affect the stability of the device (see reference: E.Bi et al., “Efficient Perovskite Solar Cell Modules with High Stability Enabled by Iodide Diffusion Barriers,” Joule, vol.3, no.11,
  • the FF of high-efficiency small-area ( ⁇ 1 cm 2 ) cells in the prior art is 82-86%.
  • the FF is often only 70-80% (see references: Y. Ding et al., "Single-crystalline TiO2 nanoparticles for stable and efficient perovskite modules," Nat. Nanotechnol., vol. 17, no. 6, pp. 598–605, 2022, doi: 10.1038/s41565-022-01108-1.
  • the present invention aims to solve at least one of the technical problems existing in the above-mentioned prior art.
  • the present invention proposes a thin-film photovoltaic series module and a preparation method thereof.
  • the thin-film photovoltaic series module of the present invention reduces the dead zone to less than 1% of the power generation area through a new series connection method, and correspondingly increases the GFF (geometric fill factor) of the thin-film photovoltaic series module to more than 99%, thereby proportionally improving the efficiency of the thin-film photovoltaic series module; avoiding the exposure of the side wall of the battery material and increasing the stability; eliminating the high series resistance loss of the side wall and the contact resistance loss of the back electrode contacting the top electrode, and eliminating the loss of the fill factor (FF) and efficiency caused by this.
  • FF fill factor
  • the thin-film photovoltaic series assembly of the present invention is a plurality of sub-cells (the sub-cells are composed of From bottom to top, it includes a substrate, an electrode A, an absorption layer, and an electrode B in sequence, and the electrode A corresponds to two electrodes B that are not connected to each other, and the electrode B corresponds to two electrodes A that are not connected to each other) connected in series through the staggered correspondence of electrodes A and electrodes B (because in the sub-battery, the electrode A corresponds to two electrodes B that are not connected to each other, and the electrode B corresponds to two electrodes A that are not connected to each other, so the electrodes A and electrodes B form a staggered correspondence relationship).
  • the thin-film photovoltaic series assembly of the present invention reduces the dead zone to less than 1% of the power generation area, and correspondingly increases the GFF (geometric fill factor) of the thin-film photovoltaic series assembly to more than 99%, thereby proportionally improving the efficiency of the thin-film photovoltaic series assembly; avoiding the exposure of the side wall of the battery material, increasing stability; eliminating the high series resistance loss of the side wall and the contact resistance loss of the back electrode (electrode B) contacting the top electrode (electrode A), eliminating the fill factor (FF) and efficiency loss caused by this.
  • the preparation method of the thin-film photovoltaic series assembly reduces the etching process and reduces the manufacturing cost.
  • a first aspect of the present invention provides a thin-film photovoltaic series module.
  • a thin-film photovoltaic series assembly the thin-film photovoltaic series assembly is composed of a plurality of sub-cells;
  • the sub-battery includes, from bottom to top, a substrate, an electrode A, an absorption layer, and an electrode B, and corresponding to the electrode A are two electrodes B that are not connected to each other, and corresponding to the electrode B are two electrodes A that are not connected to each other.
  • an electron transport layer and a hole transport layer are further provided between the electrode A and the absorption layer.
  • the electron transport layer and the hole transport layer between the electrode A and the absorption layer can be selectively provided as required.
  • a hole transport layer and an electron transport layer are further provided between the electrode B and the absorption layer.
  • the hole transport layer and the electron transport layer between the electrode B and the absorption layer can be selectively provided as required.
  • an electron transport layer and a hole transport layer are further arranged between the electrode A and the absorption layer, and a hole transport layer and an electron transport layer are further arranged between the electrode B and the absorption layer.
  • the corresponding positions on the upper and lower sides of the absorption layer are the electron transport layer and the hole transport layer (that is, the hole transport layer between the electrode B and the absorption layer corresponds to the electron transport layer position between the electrode A and the absorption layer, and the electron transport layer between the electrode B and the absorption layer corresponds to the hole transport layer position between the electrode A and the absorption layer).
  • the current can flow in from the electrode B of a sub-battery, pass through the electron transport layer, absorption layer, hole transport layer, and electrode A under the electrode B in sequence, and then flow from electrode A into the adjacent sub-battery of the common electrode A, and the current continues to flow from the electrode A of the adjacent sub-battery of the common electrode A into the electron transport layer, absorption layer, hole transport layer, and electrode B in sequence. Then the current flows from electrode B into the adjacent sub-battery of the common electrode B, and each sub-battery is connected in series in this way.
  • the thin-film photovoltaic series assembly is a solar cell assembly.
  • the solar cell module includes at least one of a perovskite solar cell module, an organic solar cell module, a polymer solar cell module, and a cadmium telluride solar cell module.
  • the number of sub-cells is n, where n is a positive integer (eg, an even number), for example, n is 2-10.
  • the substrate comprises glass, metal or organic matter.
  • the substrate may be replaced by a cover plate.
  • the electrode A is a conductive oxide or a conductive organic material, such as indium-doped tin oxide (ITO).
  • ITO indium-doped tin oxide
  • the thickness of the electrode A is 10 nm-1 ⁇ m; further preferably, the thickness of the electrode A is 200-600 nm.
  • the electron transport layer comprises at least one of tin oxide, C 60 and 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (CAS No.: 4733-39-5).
  • the compositions of the electron transport layer between electrode A and the absorption layer and the electron transport layer between electrode B and the absorption layer may be the same or different.
  • the hole transport layer comprises at least one of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (CAS No.: 1333317-99-9), poly(3-hexylthiophene-2,5-diyl) (CAS No.: 156074-98-5, 104934-50-1) and nickel oxide.
  • the thickness of the electron transport layer is 1-200 nm, preferably 10-100 nm.
  • the thickness of the hole transport layer is 1-200 nm, preferably 10-100 nm.
  • the absorption layer is at least one of a perovskite absorption layer, an organic absorption layer, a polymer absorption layer and a cadmium telluride absorption layer, for example, a Cs 0.17 FA 0.83 PbI 3 absorption layer.
  • the absorption layer has a thickness of 100-2000 nm, preferably 300-700 nm.
  • the electrode B is a conductive oxide or metal, such as indium tin oxide (ITO), gold, silver or copper.
  • ITO indium tin oxide
  • the thickness of the electrode B is 10 nm-1 ⁇ m, preferably 50-200 nm.
  • the dead area of the thin-film photovoltaic series module is reduced to less than 1% of the power generation area.
  • the GFF (geometric fill factor) of the thin-film photovoltaic series module is increased to more than 99%.
  • a second aspect of the present invention provides a method for preparing a thin-film photovoltaic series module.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • the electrode B is divided into blocks to obtain the thin-film photovoltaic series module.
  • the deposition method includes at least one of evaporation, sputtering, atomic layer deposition (ALD), vapor deposition (CVD), remote plasma deposition, printing, and spraying.
  • ALD atomic layer deposition
  • CVD vapor deposition
  • remote plasma deposition printing, and spraying.
  • the electrode may be a transparent or opaque electrode, such as indium-doped tin oxide (ITO).
  • ITO indium-doped tin oxide
  • the method of dividing the electrode A into blocks comprises at least one of laser ablation, probe scribing, and photolithography.
  • a mask plate shielding method is adopted to form a block electrode A, and the electrode A does not need to be separately blocked.
  • the method for preparing the absorption layer includes at least one of evaporation, sputtering, atomic layer deposition (ALD), vapor deposition (CVD), remote plasma deposition, printing, and spraying.
  • ALD atomic layer deposition
  • CVD vapor deposition
  • remote plasma deposition printing, and spraying.
  • Different absorption layers can be deposited on the electron and hole transport layers on the electrode A, or the same absorption layer can be deposited.
  • the method of depositing electrode B includes at least one of evaporation, sputtering, atomic layer deposition (ALD), vapor deposition (CVD), remote plasma deposition, printing, and spraying.
  • ALD atomic layer deposition
  • CVD vapor deposition
  • remote plasma deposition printing, and spraying.
  • the method of dividing the electrode B into blocks includes at least one of laser ablation, probe scribing, photolithography or mask covering.
  • a mask plate shielding method is used to form a block electrode B, so that there is no need to separately block the electrode B.
  • the block electrode B corresponds to the block electrode A in an alternating manner.
  • the block electrode B and the block electrode A have the same size.
  • an electron transport layer is deposited on the electrode A, and a hole transport layer is deposited on the electrode A of another adjacent but unconnected segment.
  • the electron transport layer and the hole transport layer are staggered to cover all the segmented electrodes A.
  • the electron transport layer and the hole transport layer may be deposited simultaneously or at different times.
  • the hole transport layer and the electron transport layer are first deposited on the absorption layer.
  • the hole transport layer and the electron transport layer are arranged alternately, and the hole transport layer deposited on the absorption layer corresponds to the electron transport layer on the electrode A, and the electron transport layer deposited on the absorption layer corresponds to the hole transport layer on the electrode A.
  • the electron transport layer and the hole transport layer are deposited simultaneously.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • step (4) depositing a hole transport layer and an electron transport layer on the absorption layer of step (4), so that the hole transport layer and the electron transport layer are arranged alternately, and the hole transport layer deposited on the absorption layer corresponds to the electron transport layer on electrode A, and the electron transport layer deposited on the absorption layer corresponds to the hole transport layer on electrode A;
  • Step (6) depositing electrode B, and dividing electrode B into blocks to obtain the thin film photovoltaic series module. Step (6) realizes that the hole transport layer and the electron transport layer are alternately located under electrode B.
  • the hole transport layer under electrode B corresponds to the electron transport layer on electrode A
  • the electron transport layer under electrode B corresponds to the hole transport layer on electrode A.
  • the electron transport layer can be deposited by first applying a tape, then the tape is removed, and the electron transport layer is shielded by a mask plate before the hole transport layer is deposited, and the block formation of the electrode A in step (2) can be performed after step (3) is completed.
  • the interval between two adjacent but unconnected block electrodes A is 5-60 ⁇ m, preferably 20-30 ⁇ m.
  • an absorption layer precursor solution is first prepared, and then the absorption layer precursor solution is deposited or coated on the electron transport layer and the hole transport layer in step (3) to form the absorption layer.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • ITO indium-doped tin oxide
  • the electrode A on the glass substrate is divided into blocks, the width of each block formed is 0.8-1.2 cm, and the etching width is 20-60 ⁇ m;
  • step (7) the line width of the center line is 20-30 ⁇ m.
  • the purpose of step (7) is to form a block electrode B.
  • the line width of the two long sides of the glass substrate covered by the mask plate is 0.3-0.5 cm, and the line width of the short side is 0.5-1 cm.
  • the thin-film photovoltaic series assembly of the present invention is to connect multiple sub-cells (the sub-cells, from bottom to top, sequentially include a substrate, an electrode A, an absorption layer, and an electrode B, and the corresponding to the electrode A are two electrodes B that are not connected to each other, and the corresponding to the electrode B are two electrodes A that are not connected to each other) in series through the staggered correspondence of electrodes A and electrodes B. Further, an electron transport layer and a hole transport layer are also arranged between the electrode A and the absorption layer, and a hole transport layer and an electron transport layer are also arranged between the electrode B and the absorption layer.
  • the thin-film photovoltaic series assembly of the present invention reduces the dead zone to less than 1% of the power generation area, and correspondingly increases the GFF (geometric filling factor) of the thin-film photovoltaic series assembly to more than 99%, thereby proportionally improving the efficiency of the thin-film photovoltaic series assembly; avoiding the exposure of the side wall of the battery material, increasing stability; eliminating the high series resistance loss of the side wall, and the contact resistance loss of the back electrode (electrode B) contacting the top electrode (electrode A), eliminating the loss of filling factor (FF) and efficiency caused by this.
  • the preparation method of the thin-film photovoltaic series assembly reduces the etching process and reduces the manufacturing cost.
  • FIG1 is a schematic diagram of the structure of a thin-film photovoltaic series module prepared in Example 1 of the present invention.
  • the raw materials, reagents or devices used in the following examples can be obtained from conventional commercial sources, or It can be obtained by existing known methods.
  • a thin-film photovoltaic series assembly consisting of 6 sub-cells;
  • the sub-cell includes, from bottom to top, a substrate, an electrode A, an absorption layer, and an electrode B, and corresponding to the electrode A are two electrodes B that are not connected to each other, and corresponding to the electrode B are two electrodes A that are not connected to each other;
  • An electron transport layer and a hole transport layer are also provided between electrode A and the absorption layer, and a hole transport layer and an electron transport layer are also provided between electrode B and the absorption layer.
  • the electron transport layer and the hole transport layer are provided at the corresponding positions on the upper and lower sides of the absorption layer. Then the current can flow in from electrode B of a sub-battery, pass through the electron transport layer, absorption layer, hole transport layer, and electrode A under electrode B in sequence, and then flow from electrode A into the adjacent sub-battery sharing electrode A.
  • the current continues to flow from electrode A of the adjacent sub-battery sharing electrode A into the electron transport layer, absorption layer, hole transport layer, and electrode B in sequence.
  • the current flows from electrode B into the adjacent sub-battery sharing electrode B, and in this way, the sub-batteries are connected in series.
  • the substrate is glass.
  • Electrode A is indium-doped tin oxide (ITO).
  • the electron transport layer on the electrode A is composed of tin oxide, and the electron transport layer on the absorption layer is composed of C 60 and 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline.
  • the hole transport layer is composed of a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] layer.
  • Electrode B is silver.
  • FIG1 is a schematic diagram of the structure of a thin-film photovoltaic tandem assembly prepared in Example 1 of the present invention.
  • an electrode A is arranged on a substrate, a hole transport layer and an electron transport layer are arranged on electrode A, an absorption layer is arranged on the hole transport layer and the electron transport layer, an electron transport layer and a hole transport layer are arranged on the absorption layer, and an electrode B is arranged on the electron transport layer and the hole transport layer.
  • the thin-film photovoltaic tandem assembly includes sub-cell 1, cell 2, cell 3, cell 4, cell 5, and cell 6.
  • the thin-film photovoltaic series assembly of the present invention can be composed of multiple sub-cells connected in series
  • sub-cells that can be further connected in series are schematically shown on the left side of sub-cell 1 and on the right side of sub-cell 6 in FIG. 1 .
  • the current can flow in from the electrode B of a sub-cell, pass through the electron transport layer, absorption layer, hole transport layer, and electrode A under electrode B in sequence, and then flow from electrode A into the adjacent sub-cell sharing electrode A.
  • the current continues to flow from the electrode A of the adjacent sub-cell sharing electrode A into the electron transport layer, absorption layer, hole transport layer, and electrode B in sequence. Then the current The current flows from electrode B to the adjacent sub-cells sharing electrode B, thereby connecting the sub-cells in series.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • ITO indium-doped tin oxide
  • the method for preparing the tin oxide film is a conventional method, such as a chemical bath plus sintering method.
  • the specific process can be found in the literature: T. Bu et al., "Lead halide-templated crystallization of methylamine-free perovskite for efficient photovoltaic modules," Science (80)., vol. 372, no. 6548, pp.
  • the electrode A on the glass substrate is divided into blocks at the junction of the electron transport layer and the hole transport layer by laser etching (for the specific parameters of laser etching, see P1 in Table 1).
  • the etching width is 60 ⁇ m to ensure that the two blocks are not conductive to each other (resistance>1 M ⁇ ).
  • the long side of the glass is shifted 12 mm and this step is repeated.
  • a window area is 3.6cm ⁇ 4cm (the window area is the size of the window area of the entire thin-film photovoltaic series module, that is, the effective area of all 6 sub-cells plus the dead area, but excluding the edge area not covered by the upper and lower electrodes).
  • the module contains 6 0.6cm wide sub-cells, including 3 conventional structure sub-cells and 3 inverted structure sub-cells, which are staggered and connected in series.
  • the area of the perovskite absorption layer covered by electrode A and electrode B is the effective area, and the area not covered by the two electrodes is the dead area.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • ITO indium-doped tin oxide
  • the method for preparing the tin oxide film is a conventional method, such as a chemical bath plus sintering method, and the specific process can be found in the literature: T.Bu et al., "Lead halide-templated crystallization of methylamine-free perovskite for efficient photovoltaic modules," Science (80)., vol.372, no.6548, pp.1327–1332, 2021, doi:10.1126/science.abh1035) to form an electron transport layer (remove the vacuum tape before sintering); covering the tin oxide film with a mask plate, and evaporating a 5 nm thick poly [bis (4-phenyl) (2,4,6-trimethylphenyl) amine] film to form a hole transport layer;
  • the electrode A on the glass substrate is divided into blocks at the junction of the electron transport layer and the hole transport layer by laser etching (for the specific parameters of laser etching, see P1 in Table 1).
  • the etching width is 60 ⁇ m to ensure that the two blocks are not conductive to each other (resistance>1 M ⁇ ).
  • the long side of the glass is shifted 12 mm and this step is repeated.
  • a mask plate was used to cover the interface between part of the electron transport layer and the hole transport layer along the short side of the glass substrate (the line width was 30 ⁇ m), the two long sides and one short side of the glass substrate (the line width of the two long sides of the glass substrate covered by the mask plate was 0.5 cm, and the line width of the short side was 1 cm), and 100 nm thick silver was evaporated (evaporation rate was 0.5 nm/s, background pressure was 10 -6 T) to form an electrode B, thereby obtaining a thin-film photovoltaic series module.
  • a window area is 3.6cm ⁇ 4cm, and the assembly contains 6 sub-cells, including 3 conventional structure sub-cells, 0.58cm wide, and 3 inverted structure sub-cells, 0.62cm wide, staggered and connected in series.
  • the area of the perovskite absorption layer covered by electrode A and electrode B is the effective area, and the area not covered by the two electrodes is the dead area.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • ITO indium-doped tin oxide
  • magnetron sputtering (parameters during the deposition process: background pressure of 10 -6 T, working pressure of 1.5 mT, power of 100 W, rate of 1 nm/s) to form electrode A
  • the ITO layer was divided into blocks by laser etching (for specific parameters of laser etching, see P1 in Table 1), each block was non-conductive (resistance>1 M ⁇ ), the size was 0.6 cm wide, the etching line was parallel to the short side of the glass, the etching width was 40 ⁇ m, and then placed in a UVO chamber for cleaning for 15 minutes, and then placed in a UVO chamber for cleaning for 15 minutes;
  • the method for preparing the tin oxide film is a conventional method, such as a chemical bath method, and the specific process can be found in the literature: T. Bu et al., "Lead halide-templated crystallization of methylamine-free perovskite for efficient photovoltaic modules," Science (80)., vol. 372, no. 6548, pp. 1327–1332, 2021, doi: 10.1126/science.abh1035) to form an electron transport layer;
  • a line parallel to P1 i.e., P2 line, for the specific parameters of laser etching, see P2 in Table 1
  • P2 line the line formed under the P1 laser etching parameters is called the P1 line
  • all layers except the ITO layer are completely removed, with a line width of 255 ⁇ m;
  • One window area is 3.6 cm ⁇ 4 cm, and contains 6 0.6 cm wide sub-cells of conventional structure connected in series.
  • the GFF is calculated by the formula to be 91.7%.
  • a method for preparing a thin-film photovoltaic tandem module comprises the following steps:
  • ITO indium-doped tin oxide
  • the ITO layer was divided into blocks by laser etching (for specific parameters of laser etching, see P1 in Table 1). Each block was non-conductive (resistance>1 M ⁇ ) and had a size of 0.6 cm wide.
  • the etching line was parallel to the short side of the glass and the etching width was 40 ⁇ m.
  • the electrode was then placed in a UVO chamber for cleaning for 15 minutes.
  • the electrode was then placed in a UVO chamber for cleaning for 15 minutes.
  • a laser is used to etch a line parallel to P2 (i.e., P3 line, for specific laser etching parameters, see P3 in Table 1) from the glass surface at a distance of 110 ⁇ m from the P2 line on the side of the P2 line away from the P1 line, completely removing all layers except the glass, with a line width of 88 ⁇ m.
  • a window area of 3.6 cm ⁇ 4 cm contains 6 0.6 cm wide inverted sub-cells connected in series.
  • the GFF is calculated to be 91.6% by the formula.
  • the thin-film photovoltaic tandem modules prepared in the examples and comparative examples were tested under the conditions of one sunlight intensity, AAA light source, and a window area of 14.4 cm2 (when testing, sunlight was incident from the bottom of the substrate).
  • the scanning range was from 7V to -0.1V, and the scanning rate was 1V/s.
  • the test results are shown in Table 2.
  • Voc represents open circuit voltage
  • Jsc short circuit current density
  • FF fill factor
  • GFF geometric fill factor
  • PCE power conversion efficiency

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Abstract

La présente invention appartient au domaine technique des semi-conducteurs. Sont divulgués un ensemble série photovoltaïque à film mince et son procédé de préparation. L'ensemble série photovoltaïque à film mince est constitué d'une pluralité de sous-batteries, chacune des sous-batteries comprenant séquentiellement un substrat, une électrode A, une couche d'absorption et une électrode B de bas en haut ; et deux électrodes B, qui ne sont pas connectées l'une à l'autre, correspondent à chaque électrode A, et deux électrodes A, qui ne sont pas connectées l'une à l'autre, correspondent à chaque électrode B. L'ensemble série photovoltaïque à film mince selon la présente invention réduit une zone morte à 1 % ou moins d'une zone de production d'énergie, et augmente de manière correspondante des facteurs de remplissage géométriques de l'ensemble série photovoltaïque à film mince à 99 % ou plus, de façon à améliorer l'efficacité de l'ensemble série photovoltaïque à film mince par une proportion égale ; par conséquent, l'exposition d'une paroi latérale d'un matériau de batterie est évitée, ce qui permet d'améliorer la stabilité ; et une perte de résistance en série élevée de la paroi latérale est supprimée, ce qui permet d'améliorer l'efficacité. Le procédé de préparation de l'ensemble série photovoltaïque à film mince réduit les processus de gravure, ce qui permet de réduire les coûts de fabrication.
PCT/CN2023/138501 2022-12-16 2023-12-13 Ensemble série photovoltaïque à film mince et son procédé de préparation WO2024125560A1 (fr)

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CN115835664A (zh) * 2022-12-16 2023-03-21 李美珍 一种薄膜光伏串联组件及其制备方法

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