WO2024125483A1 - Chemical mechanical polishing solution and application thereof - Google Patents
Chemical mechanical polishing solution and application thereof Download PDFInfo
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- WO2024125483A1 WO2024125483A1 PCT/CN2023/138033 CN2023138033W WO2024125483A1 WO 2024125483 A1 WO2024125483 A1 WO 2024125483A1 CN 2023138033 W CN2023138033 W CN 2023138033W WO 2024125483 A1 WO2024125483 A1 WO 2024125483A1
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- chemical mechanical
- mechanical polishing
- polishing
- polishing solution
- polysaccharide
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- 238000005498 polishing Methods 0.000 title claims abstract description 82
- 239000000126 substance Substances 0.000 title claims abstract description 28
- 229920001282 polysaccharide Polymers 0.000 claims abstract description 14
- 239000005017 polysaccharide Substances 0.000 claims abstract description 14
- 150000007524 organic acids Chemical class 0.000 claims abstract description 13
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 10
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 29
- 229920001661 Chitosan Polymers 0.000 claims description 15
- 150000004804 polysaccharides Chemical class 0.000 claims description 13
- 230000006196 deacetylation Effects 0.000 claims description 6
- 238000003381 deacetylation reaction Methods 0.000 claims description 6
- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 5
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 claims description 4
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 claims description 4
- 229940090248 4-hydroxybenzoic acid Drugs 0.000 claims description 2
- 108010010803 Gelatin Proteins 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000783 alginic acid Substances 0.000 claims description 2
- 235000010443 alginic acid Nutrition 0.000 claims description 2
- 229920000615 alginic acid Polymers 0.000 claims description 2
- 229960001126 alginic acid Drugs 0.000 claims description 2
- 150000004781 alginic acids Chemical class 0.000 claims description 2
- 229940045110 chitosan Drugs 0.000 claims description 2
- -1 cyclic carboxylic acid Chemical class 0.000 claims description 2
- 229920000159 gelatin Polymers 0.000 claims description 2
- 239000008273 gelatin Substances 0.000 claims description 2
- 229940014259 gelatin Drugs 0.000 claims description 2
- 235000019322 gelatine Nutrition 0.000 claims description 2
- 235000011852 gelatine desserts Nutrition 0.000 claims description 2
- 229920001277 pectin Polymers 0.000 claims description 2
- 239000001814 pectin Substances 0.000 claims description 2
- 235000010987 pectin Nutrition 0.000 claims description 2
- 229960000292 pectin Drugs 0.000 claims description 2
- 229940081066 picolinic acid Drugs 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 229920001285 xanthan gum Polymers 0.000 claims description 2
- 239000000230 xanthan gum Substances 0.000 claims description 2
- 235000010493 xanthan gum Nutrition 0.000 claims description 2
- 229940082509 xanthan gum Drugs 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 150000004676 glycans Chemical class 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XPCTZQVDEJYUGT-UHFFFAOYSA-N 3-hydroxy-2-methyl-4-pyrone Chemical compound CC=1OC=CC(=O)C=1O XPCTZQVDEJYUGT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- HBROZNQEVUILML-UHFFFAOYSA-N salicylhydroxamic acid Chemical compound ONC(=O)C1=CC=CC=C1O HBROZNQEVUILML-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 1
- HYMLWHLQFGRFIY-UHFFFAOYSA-N Maltol Natural products CC1OC=CC(=O)C1=O HYMLWHLQFGRFIY-UHFFFAOYSA-N 0.000 description 1
- 125000003047 N-acetyl group Chemical group 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005189 flocculation Methods 0.000 description 1
- 230000016615 flocculation Effects 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 229940043353 maltol Drugs 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Definitions
- the invention relates to the field of chemical polishing, and in particular to a chemical mechanical polishing liquid and application thereof.
- a polishing liquid with an auto-stop function is generally used in the CMP process.
- This polishing liquid can maintain a high polishing rate at a high step height. The lower the step height, the lower the polishing rate, thereby realizing the auto-stop function.
- the polishing liquid has this function, it is not necessary to design the thickness of the dielectric layer to be too thick, nor is it necessary to invest in a polishing endpoint detection device, which can reduce the loss of the silicon wafer trench low point and improve the efficiency of the planarization process.
- U.S. Patent 7696095 discloses an Auto-stop cerium oxide polishing liquid with polyethylene amine as an additive, but the solid content of the polishing liquid is as high as 2% or more, and the applicable polishing pressure is high, which is more demanding on the use conditions.
- U.S. Patent 20170014969A1 discloses a low solid content automatic stop polishing liquid containing salicylic hydroxamic acid, but the solubility of salicylic hydroxamic acid is low, and other additives are needed to increase its solubility.
- U.S. Patent 7696095 discloses an Auto-stop cerium oxide polishing liquid with polyethylene amine as an additive, but the solid content of the polishing liquid is as high as 2% or more, and the applicable polishing pressure is high, which is more demanding on the use conditions.
- U.S. Patent 20170014969A1 discloses a low solid content automatic stop polishing liquid containing salicylic hydroxamic acid, but the solubility of salicylic hydroxamic acid is low, and
- U.S. Patent 20180244956A1 discloses molecules such as maltol, benzoic acid, and hydroxybenzoic acid as automatic stop additives, but the use conditions of the polishing liquid are more demanding, and the repeatability of the polishing liquid is low, which is not conducive to large-scale production and use.
- the object of the present invention is to provide a chemical mechanical polishing liquid, comprising: cerium oxide abrasive particles, organic acid and polysaccharide.
- the cerium oxide abrasive particles are sol-type cerium oxide abrasive particles.
- the organic acid is a cyclic carboxylic acid.
- the organic acid is one or more selected from picolinic acid, p-hydroxybenzoic acid, and p-toluenesulfonic acid.
- the content of the organic acid is 0.01%-1%.
- the polysaccharide is one or more selected from xanthan gum, gelatin, pectin, chitosan, and alginic acid.
- the polysaccharide is chitosan.
- the content of the polysaccharide is 50ppm-1000ppm.
- the content of the polysaccharide is 100 ppm-500 ppm.
- the deacetylation degree of the chitosan is 95% to 100%.
- the pH value of the chemical mechanical polishing solution is 3.0-7.0.
- Another aspect of the present invention provides a use of any of the above chemical mechanical polishing solutions for polishing silicon oxide.
- the chemical mechanical polishing liquid of the present invention has a simple configuration process and is convenient for practical use;
- the deacetylation degree of chitosan used in Examples 1-7 and Comparative Example 1 is 99%. According to common knowledge in the art, the deacetylation degree has a significant impact on the solubility, viscosity, ion exchange capacity and flocculation properties of chitosan. Usually, chitosan with more than 55% N-acetyl removed can be dissolved in 1% acetic acid or hydrochloric acid and is called chitosan, but chitosan with a deacetylation degree of more than 70% can be used as an industrial product with use value.
- Polishing objects TEOS blank wafer and pattern wafer (TEOS films with different line/groove structures deposited on them), the line width/groove width of the pattern TEOS is measured to be 100um/100um.
- Polishing equipment Mirra polishing machine; IC1010 polishing pad; NanoSpec film thickness measurement system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation).
- Polishing conditions Platten and Carrier rotation speeds were 93 rpm and 87 rpm respectively, polishing pressure was 3.0 psi, and polishing liquid flow rate was 150 mL/min.
- Polishing step The TEOS blank wafer and the patterned wafer were polished using the polishing liquid prepared above using the polishing instrument and polishing conditions described above. Starting from 3 mm from the edge of the wafer, 49 points were measured at equal intervals on the diameter line to test their polishing rates. Therefore, the polishing rate of each polishing liquid is the average of the polishing rates at the 49 points. The polishing results are shown in Table 2.
- Examples 1-7 show that after adding chitosan and organic acid at the same time, it is ensured that the polishing rate on the silicon wafer without pattern (blank wafer) is very low, and the rate on the silicon wafer with pattern is very high, which can reach more than 5 times the polishing rate, thereby ensuring the function of automatically stopping when the silicon wafer with pattern is flattened.
- Comparative Example 1 when the polishing liquid contains only chitosan and does not contain the organic acid selected in the present invention, the polishing rate of the polishing liquid on the silicon wafer without pattern is very slow, and there is no acceleration effect on the rate on the pattern wafer.
- Examples 4, 1, and 5 it can be seen that as the pH value gradually increases, the polishing rate of the blank sheet increases, and the pattern polishing rate increases accordingly, but the polishing selectivity gradually decreases, and the function of automatically stopping after flattening gradually weakens. Therefore, it can be foreseen that when the pH is greater than 7, the automatic stop function will be weaker.
- the inventor further made several comparative examples with a pH value greater than 7, but the polishing test results were not ideal, so they are not supplemented here.
- the simultaneous use of the organic acid and polysaccharide specified in the present application can effectively inhibit the polishing rate of the non-patterned silicon wafer and ensure a very high polishing rate of the patterned wafer.
- the polishing can be automatically stopped after the step of the patterned wafer is removed, thereby greatly improving the yield and efficiency of the product.
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Abstract
Provided in the present invention are a chemical mechanical polishing solution and the application thereof. The chemical mechanical polishing solution comprises cerium-oxide grinding particles, an organic acid and a polysaccharide. The chemical mechanical polishing solution in the present invention has relatively good stability, thereby facilitating storage during actual use and subsequent use; when the chemical mechanical polishing solution is used for polishing a graphic wafer, steps can be rapidly removed, thereby achieving a planarization effect; furthermore, after the steps of the graphic wafer are flattened, polishing can be automatically stopped, such that excessive polishing is avoided, thereby increasing the yield of products.
Description
本发明涉及化学抛光领域，尤其涉及一种化学机械抛光液及其用途。The invention relates to the field of chemical polishing, and in particular to a chemical mechanical polishing liquid and application thereof.
现有技术中，CMP工艺中一般采用具有自动停止(Auto-stop)功能的抛光液，这种抛光液能在高的台阶高度(Stepheight)时保持高的抛光速率，台阶高度越低时抛光速度越低，从而实现自动停止的功能。一旦抛光液具有这种功能，那么则不需要将介电层的厚度设计得过厚，也不需要投入抛光终点的检测设备，就可以降低硅片沟槽低点损失，提高平坦化工艺的效率。In the prior art, a polishing liquid with an auto-stop function is generally used in the CMP process. This polishing liquid can maintain a high polishing rate at a high step height. The lower the step height, the lower the polishing rate, thereby realizing the auto-stop function. Once the polishing liquid has this function, it is not necessary to design the thickness of the dielectric layer to be too thick, nor is it necessary to invest in a polishing endpoint detection device, which can reduce the loss of the silicon wafer trench low point and improve the efficiency of the planarization process.
目前，有关自动停止抛光液已公开申请了若干个相关专利，例如，美国专利7696095公开了一种以聚乙烯胺为添加剂的Auto-stop氧化铈抛光液，但是该抛光液固含量高达2％及以上，且适用的抛光压力较高，对使用条件较为苛刻。美国专利20170014969A1公开了一种含有水杨羟肟酸的低固含量实现自动停止抛光液，但水杨羟肟酸的溶解度较低，需要配合其他添加剂增加其溶解度。美国专利20190185716A1公开了含有R-C(＝O)-NH-OH结构的分子作为自动停止添加剂，但该抛光液仅能在碱性条件下使用，并不能适用于酸性抛光液。美国专利20180244956A1公开了将麦芽酚(maltol)，苯甲酸，羟基苯甲酸等分子作为自动停止添加剂，但该抛光液的使用条件较为苛刻，其抛光液的可重复率较低，不利大规模的生产使用。At present, several related patents have been publicly applied for the automatic stop polishing liquid. For example, U.S. Patent 7696095 discloses an Auto-stop cerium oxide polishing liquid with polyethylene amine as an additive, but the solid content of the polishing liquid is as high as 2% or more, and the applicable polishing pressure is high, which is more demanding on the use conditions. U.S. Patent 20170014969A1 discloses a low solid content automatic stop polishing liquid containing salicylic hydroxamic acid, but the solubility of salicylic hydroxamic acid is low, and other additives are needed to increase its solubility. U.S. Patent 20190185716A1 discloses molecules containing R-C(＝O)-NH-OH structure as automatic stop additives, but the polishing liquid can only be used under alkaline conditions and cannot be used for acidic polishing liquid. U.S. Patent 20180244956A1 discloses molecules such as maltol, benzoic acid, and hydroxybenzoic acid as automatic stop additives, but the use conditions of the polishing liquid are more demanding, and the repeatability of the polishing liquid is low, which is not conducive to large-scale production and use.
因此，本领域亟需一种能够适用于酸性条件下，并易于配置，大规模生产使用的具有自动停止效果的抛光液，能够有效提供平坦化工艺的效率。Therefore, there is an urgent need in the art for a polishing liquid with an automatic stop effect that is suitable for use under acidic conditions, easy to configure, and used in large-scale production, and can effectively improve the efficiency of the planarization process.
发明内容Summary of the invention
为了克服上述技术缺陷，本发明的目的在于提供一种化学机械抛光液，包括：氧化铈研磨颗粒，有机酸以及多糖。
In order to overcome the above technical defects, the object of the present invention is to provide a chemical mechanical polishing liquid, comprising: cerium oxide abrasive particles, organic acid and polysaccharide.
优选的，所述氧化铈研磨颗粒为溶胶型氧化铈研磨颗粒。Preferably, the cerium oxide abrasive particles are sol-type cerium oxide abrasive particles.
优选的，所述有机酸为环状羧酸。Preferably, the organic acid is a cyclic carboxylic acid.
优选的，有机酸为选自吡啶甲酸，对羟基苯甲酸，对甲苯磺酸中的一种或多种。Preferably, the organic acid is one or more selected from picolinic acid, p-hydroxybenzoic acid, and p-toluenesulfonic acid.
优选的，所述有机酸的含量为0.01％-1％。Preferably, the content of the organic acid is 0.01%-1%.
优选的，所述多糖为选自黄原胶，明胶，果胶，壳聚糖，海藻酸中的一种或多种。Preferably, the polysaccharide is one or more selected from xanthan gum, gelatin, pectin, chitosan, and alginic acid.
优选的，所述多糖为壳聚糖。Preferably, the polysaccharide is chitosan.
优选的，所述多糖的含量为50ppm-1000ppm。Preferably, the content of the polysaccharide is 50ppm-1000ppm.
优选的，所述多糖的含量为100ppm-500ppm。Preferably, the content of the polysaccharide is 100 ppm-500 ppm.
优选的，所述壳聚糖的脱乙酰度为95％～100％。Preferably, the deacetylation degree of the chitosan is 95% to 100%.
优选的，所述化学机械抛光液的pH值为3.0-7.0。Preferably, the pH value of the chemical mechanical polishing solution is 3.0-7.0.
本发明的另一方面，提供一种将以上任一所述的化学机械抛光液用于抛光氧化硅的用途。Another aspect of the present invention provides a use of any of the above chemical mechanical polishing solutions for polishing silicon oxide.
采用了上述技术方案后，与现有技术相比，具有以下有益效果：Compared with the prior art, the above technical solution has the following beneficial effects:
本发明中的化学机械抛光液配置过程简单，便于实际使用；The chemical mechanical polishing liquid of the present invention has a simple configuration process and is convenient for practical use;
同时，在用于抛光图形晶圆时，能够快速去除台阶，达到平坦化的效果，同时能够自动停止抛光当图形晶圆的台阶磨平以后以免过抛，从而提高产品的良率。At the same time, when used for polishing graphic wafers, it can quickly remove steps to achieve a flattening effect. At the same time, it can automatically stop polishing when the steps of the graphic wafer are ground flat to avoid over-polishing, thereby improving the yield of the product.
以下结合具体实施例进一步阐述本发明的优点。The advantages of the present invention are further described below in conjunction with specific embodiments.
使用表1中所列举的各组分及含量配比实施例1-7及对比例1中的化学机械抛光液。The chemical mechanical polishing liquids in Examples 1-7 and Comparative Example 1 were prepared using the components and content ratios listed in Table 1.
其中，使用1kg氧化铈，使用去离子水将其稀释成0.3％氧化铈含量的分散液，然后添加相应量的有机酸和多糖，其中多糖选用壳聚糖。最后使用pH调节剂将化学机械抛光液调节至相应的pH值。实施例1-7及对比例1中各组分的含量如表1所示。Among them, 1 kg of cerium oxide is used, and deionized water is used to dilute it into a dispersion liquid with a cerium oxide content of 0.3%, and then a corresponding amount of organic acid and polysaccharide are added, wherein the polysaccharide is chitosan. Finally, a pH regulator is used to adjust the chemical mechanical polishing liquid to a corresponding pH value. The contents of each component in Examples 1-7 and Comparative Example 1 are shown in Table 1.
表1实施例1-7及对比例1中各组分及其含量
Table 1 Components and their contents in Examples 1-7 and Comparative Example 1
Table 1 Components and their contents in Examples 1-7 and Comparative Example 1
其中，实施例1-7及对比例1中所使用的壳聚糖的脱乙酰度为99％。依据本领域常识，脱乙酰度对壳聚糖的溶解性能、黏度、离子交换能力以及絮凝性能等都有重大影响。通常，脱去55％以上N乙酰基的甲壳素能溶于1％乙酸或盐酸，被称为壳聚糖，但脱乙酰度在70％以上的壳聚糖才能作为有使用价值的工业品。当脱乙酰度过低时，影响壳聚糖的溶解度，从而进一步影响化学机械抛光液的性质。进一步测试上述实施例及对比例中化学机械抛光液的抛光性能。测试步骤如下：Among them, the deacetylation degree of chitosan used in Examples 1-7 and Comparative Example 1 is 99%. According to common knowledge in the art, the deacetylation degree has a significant impact on the solubility, viscosity, ion exchange capacity and flocculation properties of chitosan. Usually, chitosan with more than 55% N-acetyl removed can be dissolved in 1% acetic acid or hydrochloric acid and is called chitosan, but chitosan with a deacetylation degree of more than 70% can be used as an industrial product with use value. When the deacetylation degree is too low, the solubility of chitosan is affected, thereby further affecting the properties of the chemical mechanical polishing solution. The polishing performance of the chemical mechanical polishing solution in the above embodiments and comparative examples was further tested. The test steps are as follows:
抛光对象：TEOS空白晶圆和图形晶圆(沉积了不同线/槽结构的TEOS膜)，图形TEOS测量线宽/槽宽为100um/100um。Polishing objects: TEOS blank wafer and pattern wafer (TEOS films with different line/groove structures deposited on them), the line width/groove width of the pattern TEOS is measured to be 100um/100um.
抛光仪器：Mirra抛光机台；IC1010抛光垫；NanoSpec膜厚测量系统(NanoSpec6100-300,Shanghai Nanospec Technology Corporation)。Polishing equipment: Mirra polishing machine; IC1010 polishing pad; NanoSpec film thickness measurement system (NanoSpec6100-300, Shanghai Nanospec Technology Corporation).
抛光条件：Platten和Carrier转速分别为93rpm和87rpm，抛光压力3.0psi，抛光液流速为150mL/min。Polishing conditions: Platten and Carrier rotation speeds were 93 rpm and 87 rpm respectively, polishing pressure was 3.0 psi, and polishing liquid flow rate was 150 mL/min.
抛光步骤：分别使用上述制得的抛光液对TEOS空白晶圆和图形晶圆采用上述抛光仪器和抛光条件，进行抛光处理。从晶圆边缘3mm开始，在直径线上以同等间距测49个点，分别测试其抛光速率，因此，每种抛光液的抛光速率是49点上的抛光速率的平均值。测得抛光结果如表2所示。Polishing step: The TEOS blank wafer and the patterned wafer were polished using the polishing liquid prepared above using the polishing instrument and polishing conditions described above. Starting from 3 mm from the edge of the wafer, 49 points were measured at equal intervals on the diameter line to test their polishing rates. Therefore, the polishing rate of each polishing liquid is the average of the polishing rates at the 49 points. The polishing results are shown in Table 2.
表2实施例1-7及对比例1的抛光测试结果
Table 2 Polishing test results of Examples 1-7 and Comparative Example 1
Table 2 Polishing test results of Examples 1-7 and Comparative Example 1
基于表2的测试结果可以看出，实施例1-7表明在同时加入壳聚糖以及有机酸后，其保证在无图形(空白片)的硅片上，抛光速率很低，并且在图形硅片上有很高的速率，可以达到5倍以上的抛光速率，从而能够保证当图形硅片达到平坦化后自动停止的功能。Based on the test results in Table 2, it can be seen that Examples 1-7 show that after adding chitosan and organic acid at the same time, it is ensured that the polishing rate on the silicon wafer without pattern (blank wafer) is very low, and the rate on the silicon wafer with pattern is very high, which can reach more than 5 times the polishing rate, thereby ensuring the function of automatically stopping when the silicon wafer with pattern is flattened.
对比例1，当抛光液中只含有壳聚糖时，并不含有本发明中所选用的有机酸时，抛光液在无图形的硅片上的抛光速率很慢，而且在图形晶圆上速率也没有加速效应。相较于实施例4、1、5可知，随着pH值的逐渐增大，空白片的抛光速率增加，图形抛光速率相应增加，但抛光选择比则逐渐下降，平坦后自动停止的功能逐渐减弱。故可以预见的是，当pH大于7时，自动停止的功能会更弱。在此启示下，发明人进一步做了pH值大于7的若干对比例，但其抛光测试结果并不理想，故在此处没有补充。Comparative Example 1, when the polishing liquid contains only chitosan and does not contain the organic acid selected in the present invention, the polishing rate of the polishing liquid on the silicon wafer without pattern is very slow, and there is no acceleration effect on the rate on the pattern wafer. Compared with Examples 4, 1, and 5, it can be seen that as the pH value gradually increases, the polishing rate of the blank sheet increases, and the pattern polishing rate increases accordingly, but the polishing selectivity gradually decreases, and the function of automatically stopping after flattening gradually weakens. Therefore, it can be foreseen that when the pH is greater than 7, the automatic stop function will be weaker. Inspired by this, the inventor further made several comparative examples with a pH value greater than 7, but the polishing test results were not ideal, so they are not supplemented here.
综合上述，同时使用本申请中所限定的有机酸和多糖，能够有效抑制无图形硅片的抛光速率，并且保证很高的图形晶圆的抛光速率，最终可以当图形晶圆的台阶去除后可以自动停止抛光，从而极大的提高产品的良率和效率。In summary, the simultaneous use of the organic acid and polysaccharide specified in the present application can effectively inhibit the polishing rate of the non-patterned silicon wafer and ensure a very high polishing rate of the patterned wafer. Finally, the polishing can be automatically stopped after the step of the patterned wafer is removed, thereby greatly improving the yield and efficiency of the product.
应当注意的是，本发明的实施例有较佳的实施性，且并非对本发明作任何形式的限制，任何熟悉该领域的技术人员可能利用上述揭示的技术内容变更或修饰为等同的有效实施例，但凡未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何修改或等同变化及修饰，均仍属于本发明技术方案的范围内。
It should be noted that the embodiments of the present invention have better practicability and do not impose any form of limitation on the present invention. Any technician familiar with the field may use the technical content disclosed above to change or modify it into an equivalent effective embodiment. However, any modification or equivalent changes and modifications made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solution of the present invention are still within the scope of the technical solution of the present invention.
Claims (12)
- 一种化学机械抛光液，其特征在于，包括：氧化铈研磨颗粒，有机酸以及多糖。A chemical mechanical polishing liquid, characterized by comprising: cerium oxide abrasive particles, organic acid and polysaccharide.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述氧化铈研磨颗粒为溶胶型氧化铈研磨颗粒。The cerium oxide abrasive particles are sol-type cerium oxide abrasive particles.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述有机酸为环状羧酸。The organic acid is a cyclic carboxylic acid.
- 如权利要求3所述的化学机械抛光液，其特征在于，The chemical mechanical polishing liquid according to claim 3, characterized in that有机酸为选自吡啶甲酸，对羟基苯甲酸，对甲苯磺酸中的一种或多种。The organic acid is one or more selected from picolinic acid, p-hydroxybenzoic acid and p-toluenesulfonic acid.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述有机酸的含量为0.01％-1％。The content of the organic acid is 0.01%-1%.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述多糖为选自黄原胶，明胶，果胶，壳聚糖，海藻酸中的一种或多种。The polysaccharide is one or more selected from xanthan gum, gelatin, pectin, chitosan and alginic acid.
- 如权利要求6所述的化学机械抛光液，其特征在于，The chemical mechanical polishing liquid according to claim 6, characterized in that所述多糖为壳聚糖。The polysaccharide is chitosan.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述多糖的含量为50ppm-1000ppm。The content of the polysaccharide is 50ppm-1000ppm.
- 如权利要求8所述的化学机械抛光液，其特征在于，The chemical mechanical polishing liquid according to claim 8, characterized in that所述多糖的含量为100ppm-500ppm。The content of the polysaccharide is 100ppm-500ppm.
- 如权利要求7所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 7, characterized in that所述壳聚糖的脱乙酰度为95％～100％。The deacetylation degree of the chitosan is 95% to 100%.
- 如权利要求1所述的化学机械抛光液，其特征在于，The chemical mechanical polishing solution according to claim 1, characterized in that所述化学机械抛光液的pH值为3.0-7.0。The pH value of the chemical mechanical polishing liquid is 3.0-7.0.
- 一种将上述权利要求1-11任一所述的化学机械抛光液用于抛光氧化硅的用途。 A use of the chemical mechanical polishing liquid according to any one of claims 1 to 11 for polishing silicon oxide.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130260558A1 (en) * | 2010-12-24 | 2013-10-03 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
| WO2019011253A1 (en) * | 2017-07-13 | 2019-01-17 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing slurry |
| US20190241766A1 (en) * | 2016-09-29 | 2019-08-08 | Kao Corporation | Polishing liquid composition |
| US20200048551A1 (en) * | 2018-08-09 | 2020-02-13 | Versum Materials Us, Llc | Chemical Mechanical Planarization Composition For Polishing Oxide Materials And Method Of Use Thereof |
| KR20200056563A (en) * | 2018-11-15 | 2020-05-25 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition comprising surface modified abrasive and method of preparing the same |
| CN115212920A (en) * | 2022-07-11 | 2022-10-21 | 浙江奥首材料科技有限公司 | Chitosan-based dispersion catalyst, semiconductor material polishing solution containing chitosan-based dispersion catalyst, and preparation method and application of semiconductor material polishing solution |
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- 2023-12-12 WO PCT/CN2023/138033 patent/WO2024125483A1/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130260558A1 (en) * | 2010-12-24 | 2013-10-03 | Hitachi Chemical Co., Ltd. | Polishing liquid and method for polishing substrate using the polishing liquid |
| US20190241766A1 (en) * | 2016-09-29 | 2019-08-08 | Kao Corporation | Polishing liquid composition |
| WO2019011253A1 (en) * | 2017-07-13 | 2019-01-17 | 安集微电子科技（上海）股份有限公司 | Chemical-mechanical polishing slurry |
| US20200048551A1 (en) * | 2018-08-09 | 2020-02-13 | Versum Materials Us, Llc | Chemical Mechanical Planarization Composition For Polishing Oxide Materials And Method Of Use Thereof |
| KR20200056563A (en) * | 2018-11-15 | 2020-05-25 | 솔브레인 주식회사 | Chemical-mechanical polishing slurry composition comprising surface modified abrasive and method of preparing the same |
| CN115212920A (en) * | 2022-07-11 | 2022-10-21 | 浙江奥首材料科技有限公司 | Chitosan-based dispersion catalyst, semiconductor material polishing solution containing chitosan-based dispersion catalyst, and preparation method and application of semiconductor material polishing solution |
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