WO2024106011A1

WO2024106011A1 - Semiconductor package, electronic device, and method for controlling semiconductor package

Info

Publication number: WO2024106011A1
Application number: PCT/JP2023/034401
Authority: WO
Inventors: 剛渡部
Original assignee: ソニーセミコンダクタソリューションズ株式会社
Priority date: 2022-11-17
Filing date: 2023-09-22
Publication date: 2024-05-23

Abstract

The present invention makes it easy to downsize a semiconductor package provided with a Peltier module.　This semiconductor package is equipped with a mounting substrate, a semiconductor chip, and a Peltier module. In the semiconductor package equipped with the mounting substrate, the semiconductor chip, and the Peltier module, the semiconductor chip is loaded in an attachment region in a substrate surface of the mounting substrate. Also, in the semiconductor package equipped with the mounting substrate, the semiconductor chip, and the Peltier module, the Peltier module is connected to the periphery of the attachment region in the substrate surface of the mounting substrate.

Description

SEMICONDUCTOR PACKAGE, ELECTRONIC DEVICE, AND METHOD FOR CONTROLLING SEMICONDUCTOR PACKAGE

This technology relates to semiconductor packages. In more detail, it relates to semiconductor packages that use Peltier elements, electronic devices, and methods for controlling semiconductor packages.

Conventionally, semiconductor chips that consume a lot of power, such as image sensors, require thermal management because heat generated during operation adversely affects performance. For example, a semiconductor package has been proposed in which a Peltier module using a Peltier element is connected to the underside of a substrate that has a semiconductor chip mounted on its upper surface, and a heat sink is placed underneath (see, for example, Patent Document 1).

JP 2006-222776 A

In the above-mentioned conventional technology, the Peltier module and heat sink are used to dissipate heat generated by the semiconductor chip. However, in the above-mentioned semiconductor package, the arrangement of the Peltier module makes it difficult to secure space on the underside of the board to mount components. This requires a larger board area, but this increases the size of the semiconductor package. Reducing the Peltier module and heat sink would allow for a smaller package, but this is not desirable as it would reduce heat dissipation performance. Thus, the above-mentioned semiconductor package has the problem that it is difficult to reduce the size.

This technology was developed in light of these circumstances, and aims to make it easier to miniaturize semiconductor packages equipped with Peltier modules.

This technology has been made to solve the above-mentioned problems, and its first aspect is a semiconductor package including a mounting substrate, a semiconductor chip mounted in an attachment area on the substrate plane of the mounting substrate, and a Peltier module connected to the periphery of the attachment area on the substrate plane, and a control method for the same. This has the effect of facilitating miniaturization.

In addition, in this first aspect, the Peltier module may include a heat dissipation side substrate, a heat absorption side substrate connected to the mounting substrate, and a Peltier element disposed between the heat dissipation side substrate and the heat absorption side substrate. This provides the effect of cooling the semiconductor chip.

Furthermore, in this first aspect, both the heat dissipation side substrate and the heat absorption side substrate may be flexible substrates having openings. This has the effect of enabling the semiconductor package to be made thinner.

In addition, in this first aspect, the heat absorption side substrate may be a ceramic substrate having an opening. This provides the effect of absorbing heat via the ceramic substrate.

In addition, in this first aspect, the heat dissipation substrate may be a ceramic substrate having an opening. This provides the effect of dissipating heat via the ceramic substrate.

In addition, in this first aspect, the heat dissipation substrate may be a transparent substrate. This eliminates the need for glass.

In addition, in this first aspect, the Peltier module may include a metal plate having an opening, a heat dissipation side substrate connected to the metal plate, a heat absorption side substrate connected to the mounting substrate, and a Peltier element disposed between the heat dissipation side substrate and the heat absorption side substrate. This provides the effect of dissipating heat via the metal plate.

Furthermore, in this first aspect, the metal plate is fixed to the mounting portion, and the linear expansion coefficient and thermal conductivity of the metal plate may be greater than those of the heat dissipation side substrate and less than those of the mounting portion. This provides the effect of suppressing thermal deformation of the metal plate while ensuring the thermal conductivity of the metal plate.

In addition, in this first aspect, the Peltier module may further include a sealing resin that seals the heat dissipation substrate and each side of the Peltier element. This provides the effect of sealing the space within the semiconductor package.

In addition, in this first aspect, the semiconductor chip may perform photoelectric conversion of incident light to generate image data. This provides the effect of capturing an image of the image data.

In addition, in this first aspect, glass may be further provided to seal the space formed by the Peltier module and the mounting substrate. This provides the effect of sealing the space within the semiconductor package.

Furthermore, in this first aspect, a first application area along the outer periphery of the mounting board, a mounting land to which the Peltier module is connected, and a second application area between the application area and the mounting land are arranged on the substrate plane, and the mounting land and the first application area may be bonded to the Peltier module by a conductive adhesive, and the second application area may be bonded to the Peltier module by a non-conductive adhesive. This provides the effect of insulating the first application area from the mounting land.

The second aspect of the present technology is an electronic device that includes a mounting substrate, a semiconductor chip mounted in an attachment region of a substrate plane of the mounting substrate, a Peltier module connected to the periphery of the attachment region of the substrate plane, and a control unit that supplies current to the Peltier module. This provides the effect of miniaturizing the electronic device.

1 is a block diagram showing an example of a configuration of an imaging device according to a first embodiment of the present technology; 1 is a cross-sectional view showing a configuration example of a semiconductor package according to a first embodiment of the present technology; 1A and 1B are a top view and a bottom view of a semiconductor package according to a first embodiment of the present technology. 1A to 1C are diagrams for explaining a mounting example of a semiconductor package according to a first embodiment of the present technology; 1A to 1C are an example of a top view, a cross-sectional view, and a bottom view of a Peltier module according to a first embodiment of the present technology. 3A to 3C are diagrams for explaining an arrangement of Peltier elements according to the first embodiment of the present technology. 1A and 1B are an example of a top view and a cross-sectional view of an interposer substrate according to a first embodiment of the present technology; 5A to 5C are diagrams illustrating a process of forming an electrode on the ceramic substrate on the heat dissipation side in the first embodiment of the present technology. 5A to 5C are diagrams illustrating a process of applying solder to a ceramic substrate on a heat dissipation side in the first embodiment of the present technology. 5A to 5C are diagrams illustrating a process of forming an electrode on the heat absorption side ceramic substrate in the first embodiment of the present technology. 5A to 5C are diagrams illustrating a process of applying solder to a ceramic substrate on a heat absorption side in the first embodiment of the present technology. 1A to 1C are diagrams illustrating a process of arranging a Peltier element according to the first embodiment of the present technology. 3A to 3C are diagrams illustrating a process of soldering the ceramic substrate according to the first embodiment of the present technology. 5A to 5C are diagrams illustrating a process of applying a sealing resin in the first embodiment of the present technology. 4A and 4B are an example of a cross-sectional view and a top view of a Peltier module after application of a sealing resin according to a first embodiment of the present technology; 4A to 4C are diagrams showing a process of bonding a metal plate in the first embodiment of the present technology; 1A and 1B are an example of a cross-sectional view and a bottom view of an organic substrate according to a first embodiment of the present technology. 1A to 1C are diagrams illustrating a process of mounting components on an organic substrate according to a first embodiment of the present technology. 3A to 3C are diagrams illustrating a process of dividing an organic substrate into individual pieces according to the first embodiment of the present technology. 3A to 3C are diagrams illustrating a die bonding process according to the first embodiment of the present technology. 1A to 1C are diagrams illustrating a wire bonding process according to a first embodiment of the present technology. 5A to 5C are diagrams illustrating a step of applying a non-conductive adhesive in the first embodiment of the present technology. 5A to 5C are diagrams illustrating a process of applying a conductive adhesive in the first embodiment of the present technology. 1A to 1C are diagrams showing a process of adhering a Peltier module according to the first embodiment of the present technology; 1A to 1C are diagrams illustrating a step of applying an adhesive in the first embodiment of the present technology. 4A to 4C are diagrams illustrating a process of mounting glass in the first embodiment of the present technology. 4 is a flowchart showing an example of a control method for a semiconductor package according to the first embodiment of the present technology. 13A to 13C are an example of a top view, a cross-sectional view, and a bottom view of a Peltier module according to a second embodiment of the present technology. 13A to 13C are an example of a top view, a cross-sectional view, and a bottom view of a Peltier module according to a third embodiment of the present technology. 1 is a block diagram showing a schematic configuration example of a vehicle control system; FIG. 4 is an explanatory diagram showing an example of an installation position of an imaging unit.

Hereinafter, modes for carrying out the present technology (hereinafter, referred to as embodiments) will be described in the following order.
1. First embodiment (example in which a Peltier module is connected to the upper surface of an interposer substrate)
2. Second embodiment (an example in which a Peltier module including a sapphire substrate is connected to the upper surface of an interposer substrate)
3. Third embodiment (an example in which a Peltier module including a flexible substrate is connected to the upper surface of an interposer substrate)
4. Examples of applications to moving objects

1. First embodiment
[Configuration example of imaging device]
1 is a block diagram showing a configuration example of an imaging device 100 according to a first embodiment of the present technology. The imaging device 100 is an electronic device that captures image data, and includes a control unit 110, a battery remaining capacity measurement unit 120, a battery 130, a semiconductor package 200, an image processing unit 140, and a storage unit 150. As the imaging device 100, a mirrorless camera, a smartphone, a notebook computer having an imaging function, and the like are assumed. In addition, the semiconductor package 200 includes a Peltier module 300, a sensor chip 220, and a temperature sensor 411. The imaging device 100 is an example of an electronic device described in the claims.

The control unit 110 controls the entire imaging device 100. The control unit 110 acquires the temperature measured by the temperature sensor 411 during imaging, and judges whether the temperature is higher than a predetermined upper limit. If the temperature is higher than the upper limit, the control unit 110 supplies a current to the Peltier module 300 to drive it. Then, while the Peltier module 300 is being driven, the control unit 110 acquires the temperature measured by the temperature sensor 411, and judges again whether the temperature is higher than the upper limit. If the temperature is higher than the upper limit, the control unit 110 acquires the remaining battery capacity measured by the battery remaining capacity measurement unit 120. If the remaining battery capacity is equal to or lower than a predetermined lower limit, the control unit 110 controls the Peltier module 300 and the sensor chip 220 to stop their operation.

The battery remaining capacity measuring unit 120 measures the remaining capacity of the battery 130. This battery remaining capacity measuring unit 120 supplies the measured battery remaining capacity to the control unit 110.

The battery 130 supplies power to the circuits and elements within the imaging device 100. For example, a secondary battery is used as the battery 130.

The Peltier module 300 dissipates heat generated by the sensor chip 220 through the Peltier effect.

The sensor chip 220 photoelectrically converts incident light to generate image data. For example, a CIS (CMOS Image Sensor) is used as the sensor chip 220. This sensor chip 220 generates image data according to the control of the control unit 110, and supplies the data to the image processing unit 140.

The temperature sensor 411 measures the temperature of the sensor chip 220. This temperature sensor 411 supplies the measured temperature to the control unit 110.

The image processing unit 140 performs various image processing such as demosaic processing on the image data. This image processing unit 140 stores the processed image data in the storage unit 150.

The storage unit 150 stores image data.

Note that while the image processing unit 140 and the memory unit 150 are provided outside the semiconductor package 200, some or all of them can be provided within the sensor chip 220. For example, the sensor chip 220 can have a stacked structure in which multiple chips are stacked, and the image processing unit 140 and the memory unit 150 can be located on one of these chips.

In addition, although the temperature sensor 411 is disposed inside the semiconductor package 200, this sensor can also be disposed outside the semiconductor package 200.

In addition, although the control unit 110 is disposed outside the semiconductor package 200, some or all of the functions of this control unit 110 can be realized by circuits within the semiconductor package 200.

[Example of semiconductor package configuration]
2 is a cross-sectional view showing an example of a configuration of a semiconductor package 200 according to the first embodiment of the present technology. The semiconductor package 200 includes a glass 210, a Peltier module 300, a sensor chip 220, and an interposer substrate 400.

Hereinafter, a specific axis parallel to the substrate plane of the interposer substrate 400 is referred to as the "X-axis", and an axis perpendicular to the substrate plane is referred to as the "Z-axis". An axis perpendicular to the X-axis and Z-axis is referred to as the "Y-axis". This figure is a cross-sectional view seen from the Y-axis direction.

Furthermore, below, the direction from the interposer substrate 400 to the sensor chip 220 will be referred to as the "up" direction.

The sensor chip 220 is mounted on the attachment area of the upper surface of the interposer substrate 400 and is electrically connected by wire bonding. In addition, a predetermined number of peripheral components 412 and a connector 413 are arranged on the lower surface of the interposer substrate 400. A flexible cable 230 is connected to the connector 413.

In addition, wiring is formed within the interposer substrate 400 to electrically connect the sensor chip 220 and the Peltier module 300 to the connector 413. This allows a circuit outside the semiconductor package 200 (such as the control unit 110) to transmit and receive image data and control signals to and from the sensor chip 220 via the flexible cable 230, and to supply current to the Peltier module 300. In addition, a temperature sensor 411 (not shown) is disposed, for example, within the interposer substrate 400, and the temperature measured by the temperature sensor 411 is transmitted to the control unit 110, etc., via the connector 413.

The sensor chip 220 is an example of a semiconductor chip as described in the claims, and the interposer substrate 400 is an example of a mounting substrate as described in the claims.

The Peltier module 300 is connected to the periphery of the attachment area on the top surface of the interposer substrate 400 where the sensor chip 220 is mounted. This Peltier module 300 surrounds the sides of the sensor chip 220, and a space (in other words, a cavity) is formed by the interposer substrate 400 and the Peltier module 300. The top of the cavity is sealed with glass 210.

If the sensor chip 220 has many pixels and operates at high speed, power consumption increases, and the heat generated during operation adversely affects imaging characteristics and reliability. For this reason, it is necessary to forcibly dissipate heat from the sensor chip 220, and the volume and weight of the semiconductor package 200 and imaging device 100 tend to increase due to the need for cooling and heat dissipation members for this purpose.

Here, consider a comparative example of a semiconductor package in which the sensor chip 220 is placed on the upper surface of the interposer substrate 400, a Peltier module is connected to its underside, and a heat sink is placed underneath. In mirrorless cameras and the like, it may be necessary to mount components on the underside of the interposer substrate 400 as well in order to reduce weight and save space. However, in the comparative example, since the Peltier module is placed on the underside of the interposer substrate 400, it becomes difficult to secure space to mount components on that underside. This requires a larger substrate area, but this results in a corresponding increase in the size of the semiconductor package. Reducing the Peltier module and heat sink would enable the package to be made smaller, but this is not desirable as it would reduce heat dissipation performance.

In contrast, as shown in the figure, a configuration in which the sensor chip 220 and Peltier module 300 are connected to the upper surface of the interposer substrate 400 makes it easier to mount components on the lower surface of the interposer substrate 400. This allows the substrate area to be narrower than in the comparative example, making the semiconductor package 200 more compact. In addition, warping of the imaging surface of the sensor chip 220 due to temperature changes when controlling the temperature of the sensor chip 220 is also reduced, preventing degradation of image quality. These characteristics make it possible to miniaturize the imaging device 100 that incorporates the sensor chip 220 that captures video with a large angle of view, improving portability.

FIG. 3 is a top view and a bottom view of a semiconductor package 200 according to a first embodiment of the present technology. In the figure, a is an example of a top view of the semiconductor package 200, and b is an example of a bottom view of the semiconductor package 200.

As shown in FIG. 1A, a screw hole 312 is provided at each of the four corners of the Peltier module 300. Also, as shown in FIG. 1B, various peripheral components 412 can be arranged on the underside of the interposer board 400.

FIG. 4 is a diagram for explaining an example of mounting the semiconductor package 200 in the first embodiment of the present technology. An attachment portion 161 and a thermally conductive sheet 162 are provided within the imaging device 100.

The semiconductor package 200 is fixed to the mounting portion 161 with screws 163, sandwiching the thermally conductive sheet 162 between them.

When a current is supplied to the Peltier module 300 via the connector 413 in FIG. 3 in the configuration illustrated in FIG. 2 to FIG. 4, heat is dissipated from the upper surface of the interposer substrate 400, and the sensor chip 220 is cooled via the substrate. The released heat is dissipated from the Peltier module 300 via the thermal conduction sheet 162 and the mounting portion 161 in FIG. 4 to the housing of the imaging device 100.

[Example of Peltier module configuration]
5A and 5B are an example of a top view, a cross-sectional view, and a bottom view of the Peltier module 300 according to the first embodiment of the present technology. In the figure, a is an example of a top view of the Peltier module 300, and b is an example of a cross-sectional view of the Peltier module 300 as viewed from the Y-axis direction. C is an example of a bottom view of the Peltier module 300.

As shown in FIG. 3B, the Peltier module 300 includes a metal plate 310, a ceramic substrate 320, a Peltier element 330, and a ceramic substrate 340.

The ceramic substrate 340 is a frame-shaped ceramic substrate with an opening, and is disposed on the lower side (in other words, the heat absorption side) of the ceramic substrate 320. The ceramic substrate 320 is a frame-shaped ceramic substrate with an opening, and is disposed on the upper side (in other words, the heat dissipation side) of the ceramic substrate 340. The area of the upper ceramic substrate 320 is made smaller than that of the lower ceramic substrate 340 so that the sealing resin 350 can be applied. Furthermore, the thickness of the lower ceramic substrate 340 is made approximately 30% greater than that of the upper ceramic substrate 320 so that the ceramic substrate 320 does not follow deformation caused by a temperature rise during heat dissipation.

The ceramic substrate 320 is an example of a heat dissipation side substrate as described in the claims, and the ceramic substrate 340 is an example of a heat absorption side substrate as described in the claims.

The Peltier element 330 is disposed between the ceramic substrate 320 and the ceramic substrate 340, and its size in the Z-axis direction (i.e., its height) is 1 millimeter (mm) or less. A number of semiconductors (not shown) constituting the Peltier element 330 are arranged along the outer periphery of the opening of the ceramic substrate 320. In addition, the respective sides of the ceramic substrate 320 and the Peltier element 330 are sealed with non-conductive sealing resin 350 to prevent foreign matter or moisture from entering the cavity through the gaps between these semiconductors. As the sealing resin 350, for example, a silicone-based or epoxy-based thermosetting resin with a viscosity of 30 Pascal seconds (Pa·s) or more, high thixotropy, and low outgassing is used.

The metal plate 310 is a black-plated metal substrate, and is bonded to the top surface of the ceramic substrate 320 by sealing resin 350. The material used for the metal plate 310 has a linear expansion coefficient and thermal conductivity greater than those of the ceramic substrate 320 and smaller than those of the mounting portion 161 illustrated in FIG. 4. This ensures the thermal conductivity of the metal plate 310 while suppressing its thermal deformation. In addition, thermal stress occurs due to the difference in thermal expansion coefficient between the glass 210 (not shown) on the top surface of the metal plate 310 and the metal plate 310. For this reason, the glass 210 used is one that can sufficiently relieve this thermal stress (such as heat-resistant glass).

As shown in FIG. 5A, the metal plate 310 has an opening 311 in the center when viewed in the Z-axis direction, and screw holes 312 at the four corners.

As shown in Fig. 3c, the ceramic substrate 340 has an opening 341 in the center when viewed from the Z-axis direction, and has

terminals

342 and 343 on the bottom surface. The thick line in Fig. 3c indicates the outer periphery of the opening 341.

FIG. 6 is a diagram for explaining the arrangement of Peltier elements 330 in the first embodiment of the present technology. In the figure, a is an example of a top view of a ceramic substrate 340 on which Peltier elements 330 are arranged, and b is an example of a cross-sectional view of the Peltier elements 330 and the ceramic substrate 340 when cut along the dashed line in a of the figure. c is an example of a bottom view of the ceramic substrate 340. d is an example of an enlarged view of the Peltier element 330. e is a cross-sectional view of the unit structure of the Peltier element 330.

As shown in FIG. 1E, the unit structure of Peltier element 330 includes gold-plated

electrodes

331, 332, and 335, p-type semiconductor 333, and n-type semiconductor 334. This unit structure is called a π-type thermoelectric conversion element.

Electrode 335 is formed on the lower (heat absorption side) ceramic substrate 340.

Electrodes

332 and 335 are formed on the upper (heat dissipation side) ceramic substrate 320. P-type semiconductor 333 and n-type semiconductor 334 are connected to electrode 335 with solder. Furthermore, p-type semiconductor 333 and an adjacent n-type semiconductor (not shown) are connected to electrode 331. N-type semiconductor 334 and an adjacent p-type semiconductor (not shown) are connected to electrode 332.

Also, as shown in a in the figure, a plurality of electrodes 335, a plurality of p-type semiconductors 333, and a plurality of n-type semiconductors 334 are arranged on the ceramic substrate 320 along the outer periphery of the opening 341. These semiconductors and electrodes form a plurality of units of π-type thermoelectric conversion elements, which are connected in series. The two upper left electrodes 335 are provided with only n-type semiconductors 334, and these electrodes 335 are commonly connected to the terminal 342 in the figure c. The two lower right electrodes 335 are provided with only p-type semiconductors 333, and these electrodes 335 are commonly connected to the terminal 343 in the figure c. With this configuration, when the control unit 110 drives the Peltier module 300, a current flows from the terminal 342 to the terminal 343 via the plurality of π-type thermoelectric conversion elements in the Peltier element 330.

[Example of interposer board configuration]
7 is an example of a top view and a cross-sectional view of the interposer substrate 400 according to the first embodiment of the present technology. In the figure, peripheral components 412 and connectors 413 are omitted. In the figure, a is an example of a top view of the interposer substrate 400. In the figure, b is an example of a cross-sectional view taken along line A1-A2 in the figure. In the figure, c is an example of a cross-sectional view taken along line B1-B2 in the figure.

As shown in FIG. 1A, a rectangular attachment area 421 is disposed in the center of the upper surface of the interposer substrate 400. This attachment area 421 is an area for mounting the sensor chip 220, and is gold plated.

In addition, multiple bumps 422 are arranged along the outer periphery of the attachment region 421. During wire bonding, one end of a wire is connected to the bumps 422.

Furthermore, of the four corners of the interposer substrate 400, a mounting land 423 is formed at the upper left and a mounting land 424 is formed at the lower right. These mounting

lands

423 and 424 are gold plated and are connected to

terminals

342 and 343 of the ceramic substrate 340 in FIG. 6.

Also, L-shaped

application areas

425 and 426 are formed along the outer periphery of the interposer substrate 400. These

application areas

425 and 426 are areas for applying a conductive adhesive, and are gold plated. Application area 427 for applying a non-conductive adhesive is provided between mounting

lands

423 and 424 and

application areas

425 and 426. This application area 427 is not gold plated. Furthermore, adhesive is applied to the area indicated by the dotted line a in the figure.

Note that

application areas

425 and 426 are an example of a first application area described in the claims, and application area 427 is an example of a second application area described in the claims.

As shown in FIG. 1B, the

coating areas

425 and 426 and the attachment area 421 are commonly connected by copper foil 431 in the interposer substrate 400. This allows heat generated by the sensor chip 220 mounted in the attachment area 421 to be conducted to the

coating areas

425 and 426 and released to the Peltier module 300 (not shown) on the upper surface.

As shown in FIG. 3c, the mounting

lands

423 and 424 are connected to one end of

signal lines

432 and 433, and the other ends of these signal lines are connected to the connector 413 (not shown). A current is supplied from the control unit 110 to the Peltier module 300 via the

signal lines

432 and 433.

[Manufacturing method of Peltier module]
Next, a method for manufacturing the Peltier module 300 will be described with reference to FIGS.

As illustrated in FIG. 8a, electrodes such as

electrodes

331 and 332 are formed along the outer periphery of opening 321 on the upper surface of ceramic substrate 320 on the upper side (heat dissipation side). FIG. 8b is a cross-sectional view of ceramic substrate 320 taken along the dashed line in FIG. 8a. FIG. 8c is a bottom view of ceramic substrate 320. At this point, the surface facing ceramic substrate 340 is the upper side, and compared to FIG. 5b, the top and bottom are reversed.

Then, as illustrated in FIG. 9A, solder 336 is applied to each of the electrodes on the upper surface of the ceramic substrate 320. FIG. 9B is a cross-sectional view of the ceramic substrate 320 taken along the dashed line in FIG. 9A. FIG. 9C is a bottom view of the ceramic substrate 320. At this point, the surface facing the ceramic substrate 340 is the upper side, and the top and bottom are reversed compared to FIG. 5B.

Also, as illustrated in FIG. 10A, a plurality of electrodes 335 are formed along the outer periphery of the opening 341 on the upper surface of the lower (heat absorbing) ceramic substrate 340. FIG. 10B is a cross-sectional view of the ceramic substrate 340 taken along the dashed line in FIG. 10A. FIG. 10C is a bottom view of the ceramic substrate 340.

Then, as shown in FIG. 11A, solder 337 is applied to each of the electrodes on the upper surface of the ceramic substrate 340. FIG. 11B is a cross-sectional view of the ceramic substrate 340 taken along the dashed line in FIG. 11A. FIG. 11C is a bottom view of the ceramic substrate 340.

Next, as illustrated in FIG. 12a, p-type semiconductors 333 and n-type semiconductors 334 are soldered to the electrodes on the upper surface of ceramic substrate 340. These p-type semiconductors 333 and n-type semiconductors 334 are arranged alternately along the outer periphery of opening 341. FIG. 12b is a cross-sectional view of ceramic substrate 340 taken along the dashed line in FIG. 12a. FIG. 12c is a bottom view of ceramic substrate 340.

The steps from FIG. 8 to FIG. 9 and the steps from FIG. 10 to FIG. 12 may be performed in parallel or in sequence.

Then, as shown in FIG. 13A, the ceramic substrate 320 is turned upside down and soldered to the Peltier element 330 on the top surface of the ceramic substrate 340. FIG. 13B shows the state after soldering is completed.

Next, as shown in FIG. 14, sealing resin 350 is applied to the periphery of the ceramic substrate 340.

15a shows a top view of the state after application of the sealing resin 350 has been completed, and FIG. 15b shows a cross-sectional view. As shown in FIG. 15b, the sealing resin 350 is applied so that it is higher than the ceramic substrate 320.

Then, as shown in FIG. 16A, the metal plate 310 is attached with good precision and close contact. FIG. 16B shows the state after attachment. Then, as shown in FIG. 16C, the sealing resin 350 is hardened by heating.

[Method of manufacturing semiconductor package]
Next, a process for manufacturing the semiconductor package 200 using the Peltier module 300 obtained by the process shown in FIGS. 8 to 16 will be described with reference to FIGS. 17 to 26. FIG.

As shown in FIG. 17, an organic substrate 500 including multiple interposer substrates is created. In the figure, a is a cross-sectional view of the organic substrate 500, and b is a bottom view of the organic substrate 500.

Next, as shown in FIG. 18, peripheral components 412 and connectors 413 are mounted on the bottom surface of the organic substrate 500 by soldering. In the figure, a is a cross-sectional view of the organic substrate 500, and b is a bottom view of the organic substrate 500.

Next, as shown in FIG. 19, a plurality of interposer substrates 400 are obtained by dicing. In the figure, a is a cross-sectional view of the interposer substrate 400, and b is a bottom view of the interposer substrate 400.

Next, as shown in FIG. 20A, the sensor chip 220 is die-bonded to the upper surface of the interposer substrate 400. FIG. 20B is a bottom view of the interposer substrate 400.

Next, as shown in FIG. 21A, the sensor chip 220 is electrically connected to the interposer substrate 400 by wires. FIG. 21B is a bottom view of the interposer substrate 400.

Next, as illustrated in FIG. 22a and 22b, non-conductive adhesive 441 is applied to application area 427 between mounting

lands

423 and 424 and gold-plated

application areas

425 and 426.

Furthermore, as illustrated in FIG. 23A and FIG. 23B, conductive adhesive 442 is applied to each of the mounting

lands

423 and 424 and the gold-plated

application areas

425 and 426.

The volume resistivity of the conductive adhesive 442 is, for example, 8×10 ⁻⁴ ohm-centimeters (Ω·cm). The diameter of the coating region 427 is greater than the width and diameter of the mounting

lands

423 and 424 and the

coating regions

425 and 426. Therefore, the non-conductive adhesive 441 in the coating region 427 insulates the mounting

lands

423 and 424 from the

coating regions

425 and 426.

The non-conductive adhesive 441 and the conductive adhesive 442 are, for example, silicone-based or epoxy-based thermosetting resins that have a viscosity of 30 Pascal seconds (Pa·s) or more, are highly thixotropic, and have little outgassing.

Next, as shown in FIG. 24A, the Peltier module 300 is precisely placed on the interposer substrate 400 and pressurized. Then, as shown in FIG. 24B, the Peltier module 300 and the interposer substrate 400 are heated with no gaps in the adhesive between them, causing the adhesive to harden.

Next, as shown in FIG. 25A, adhesive 313 is applied around the opening 311 on the top surface of the Peltier module 300. For example, an ultraviolet curable resin is used as the adhesive 313. In the same figure, B is a cross-sectional view of the semiconductor package 200 before the glass 210 is mounted.

Then, glass 210 is mounted as shown in FIG. 26A, and ultraviolet light is applied as shown in FIG. 26B to harden adhesive 313. This seals the cavity. Note that thermosetting resin can also be used as adhesive 313 and hardened by heating.

[Example of semiconductor package control]
1 is a flowchart showing an example of a control method for a semiconductor package according to a first embodiment of the present technology. This control is started by a control unit 110 when a predetermined application for capturing image data is executed, for example.

The control unit 110 acquires the temperature of the sensor chip 220 at a predetermined timing (e.g., periodically) (step S901) and determines whether the temperature is higher than a predetermined upper limit (step S902). If the temperature is equal to or lower than the upper limit (step S902: No), the control unit 110 repeats step S901.

On the other hand, if the temperature is higher than the upper limit (step S902: Yes), the control unit 110 starts supplying current to the Peltier module 300 (step S903). While the Peltier module 300 is in operation, the control unit 110 acquires the temperature of the sensor chip 220 at a predetermined timing (e.g., periodically) (step S904) and determines whether the temperature is higher than the predetermined upper limit (step S905).

If the temperature is equal to or lower than the upper limit (step S905: No), the control unit 110 stops the current supply to the Peltier module 300 (step S909) and repeats steps S901 and onward.

On the other hand, if the temperature is higher than the upper limit (step S905: Yes), the control unit 110 acquires the remaining battery charge (step S906) and determines whether the remaining battery charge exceeds a predetermined lower limit (step S907). If the remaining battery charge exceeds the lower limit (step S907: Yes), the control unit 110 repeats steps S904 and onward.

On the other hand, if the remaining battery charge is equal to or lower than the lower limit (step S907: No), the control unit 110 instructs the sensor chip 220 to stop the imaging operation (step S908) and ends the control. Note that in step S908, the control unit 110 can also output a specified alarm regarding a temperature rise to the outside.

As shown in the figure, power can be saved by controlling the Peltier module 300 to perform cooling only when necessary.

In this way, according to the first embodiment of the present technology, the Peltier module 300 is connected together with the sensor chip 220 to the upper surface of the interposer substrate 400, making it easier to mount components on the lower surface of the interposer substrate 400. This makes it possible to reduce the substrate area compared to the comparative example, thereby making the semiconductor package 200 smaller.

2. Second embodiment
In the above-described first embodiment, a ceramic substrate is used as the substrate of the Peltier module 300, but a substrate other than a ceramic substrate may also be used. The Peltier module 300 in this second embodiment differs from the first embodiment in that a sapphire substrate is used.

FIG. 28 shows an example of a top view, a cross-sectional view, and a bottom view of a Peltier module 300 in the second embodiment of the present technology. In the figure, a is a top view of the Peltier module 300, and b is a cross-sectional view of the Peltier module 300. c is a bottom view of the Peltier module 300.

The Peltier module 300 in the second embodiment differs from the first embodiment in that a transparent sapphire substrate 360 without any openings is placed on the upper side (heat dissipation side) instead of the ceramic substrate 320. The sapphire substrate 360 is an example of a transparent substrate as described in the claims.

As shown in the figure, by using a sapphire substrate 360, the glass 210 is no longer necessary, making it possible to reduce the height of the semiconductor package 200.

In this way, according to the second embodiment of the present technology, the sapphire substrate 360 is disposed within the Peltier module 300, eliminating the need to provide glass 210.

3. Third embodiment
In the above-described first embodiment, a ceramic substrate is used as the substrate of the Peltier module 300, but a substrate other than a ceramic substrate may also be used. The Peltier module 300 in this third embodiment differs from the first embodiment in that a flexible substrate is used.

FIG. 29 shows an example of a top view, a cross-sectional view, and a bottom view of a Peltier module 300 in the third embodiment of the present technology. In the figure, a is a top view of the Peltier module 300, and b is a cross-sectional view of the Peltier module 300. c is a bottom view of the Peltier module 300.

The Peltier module 300 in the third embodiment differs from the first embodiment in that

flexible substrates

371 and 372 are arranged instead of the

ceramic substrates

320 and 340. The

flexible substrates

371 and 372 have openings, just like the

ceramic substrates

320 and 340.

As shown in the figure, by using

flexible substrates

371 and 372, the substrates can be made thinner than in the first embodiment, making the semiconductor package 200 even lighter.

The second embodiment can also be applied to the third embodiment. In this case, the upper flexible substrate 371 is replaced with a sapphire substrate 360.

In this way, according to the third embodiment of the present technology, the

flexible substrates

371 and 372 are disposed inside the Peltier module 300, thereby making it possible to further reduce the weight of the semiconductor package 200.

<4. Examples of applications to moving objects>
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, a personal mobility device, an airplane, a drone, a ship, or a robot.

FIG. 30 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a mobile object control system to which the technology disclosed herein can be applied.

The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in FIG. 30, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside vehicle information detection unit 12030, an inside vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio/video output unit 12052, and an in-vehicle network I/F (interface) 12053.

The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various programs. For example, the drive system control unit 12010 functions as a control device for a drive force generating device for generating the drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force for the vehicle.

The body system control unit 12020 controls the operation of various devices installed in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, tail lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves or signals from various switches transmitted from a portable device that replaces a key can be input to the body system control unit 12020. The body system control unit 12020 accepts the input of these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, the image capturing unit 12031 is connected to the outside-vehicle information detection unit 12030. The outside-vehicle information detection unit 12030 causes the image capturing unit 12031 to capture images outside the vehicle and receives the captured images. The outside-vehicle information detection unit 12030 may perform object detection processing or distance detection processing for people, cars, obstacles, signs, characters on the road surface, etc. based on the received images.

The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or as distance measurement information. The light received by the imaging unit 12031 may be visible light, or may be invisible light such as infrared light.

The in-vehicle information detection unit 12040 detects information inside the vehicle. To the in-vehicle information detection unit 12040, for example, a driver state detection unit 12041 that detects the state of the driver is connected. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the driver's degree of fatigue or concentration based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

The microcomputer 12051 can calculate control target values for the driving force generating device, steering mechanism, or braking device based on information inside and outside the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an Advanced Driver Assistance System (ADAS), including vehicle collision avoidance or impact mitigation, following driving based on the distance between vehicles, maintaining vehicle speed, vehicle collision warning, or vehicle lane departure warning.

The microcomputer 12051 can also control the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle acquired by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040, thereby performing cooperative control aimed at automatic driving, which allows the vehicle to travel autonomously without relying on the driver's operation.

The microcomputer 12051 can also output control commands to the body system control unit 12020 based on information outside the vehicle acquired by the outside-vehicle information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside-vehicle information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching high beams to low beams.

The audio/image output unit 12052 transmits at least one output signal of audio and image to an output device capable of visually or audibly notifying the occupants of the vehicle or the outside of the vehicle of information. In the example of FIG. 30, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are exemplified as output devices. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

FIG. 31 shows an example of the installation position of the imaging unit 12031.

In FIG. 31, the imaging unit 12031 includes

imaging units

12101, 12102, 12103, 12104, and 12105.

The

imaging units

12101, 12102, 12103, 12104, and 12105 are provided, for example, at the front nose, side mirrors, rear bumper, back door, and upper part of the windshield inside the vehicle cabin of the vehicle 12100. The imaging unit 12101 provided at the front nose and the imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin mainly acquire images of the front of the vehicle 12100. The

imaging units

12102 and 12103 provided at the side mirrors mainly acquire images of the sides of the vehicle 12100. The imaging unit 12104 provided at the rear bumper or back door mainly acquires images of the rear of the vehicle 12100. The imaging unit 12105 provided at the upper part of the windshield inside the vehicle cabin is mainly used to detect leading vehicles, pedestrians, obstacles, traffic lights, traffic signs, lanes, etc.

Note that FIG. 31 shows an example of the imaging ranges of the imaging units 12101 to 12104. Imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, imaging ranges 12112 and 12113 indicate the imaging ranges of the

imaging units

12102 and 12103 provided on the side mirrors, respectively, and imaging range 12114 indicates the imaging range of the imaging unit 12104 provided on the rear bumper or back door. For example, an overhead image of the vehicle 12100 viewed from above is obtained by superimposing the image data captured by the imaging units 12101 to 12104.

At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera consisting of multiple imaging elements, or an imaging element having pixels for detecting phase differences.

For example, the microcomputer 12051 can obtain the distance to each solid object within the imaging ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100) based on the distance information obtained from the imaging units 12101 to 12104, and can extract as a preceding vehicle, in particular, the closest solid object on the path of the vehicle 12100 that is traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km/h or faster). Furthermore, the microcomputer 12051 can set the inter-vehicle distance that should be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control) and automatic acceleration control (including follow-up start control). In this way, cooperative control can be performed for the purpose of automatic driving, which runs autonomously without relying on the driver's operation.

For example, the microcomputer 12051 classifies and extracts three-dimensional object data on three-dimensional objects, such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, based on the distance information obtained from the imaging units 12101 to 12104, and can use the data to automatically avoid obstacles. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or exceeds a set value and there is a possibility of a collision, it can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by forcibly decelerating or steering the vehicle to avoid a collision via the drive system control unit 12010.

At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared rays. For example, the microcomputer 12051 can recognize a pedestrian by determining whether or not a pedestrian is present in the captured image of the imaging units 12101 to 12104. The recognition of such a pedestrian is performed, for example, by a procedure of extracting feature points in the captured image of the imaging units 12101 to 12104 as infrared cameras, and a procedure of performing pattern matching processing on a series of feature points that indicate the contour of an object to determine whether or not it is a pedestrian. When the microcomputer 12051 determines that a pedestrian is present in the captured image of the imaging units 12101 to 12104 and recognizes a pedestrian, the audio/image output unit 12052 controls the display unit 12062 to superimpose a rectangular contour line for emphasis on the recognized pedestrian. The audio/image output unit 12052 may also control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

Above, an example of a vehicle control system to which the technology of the present disclosure can be applied has been described. Of the configurations described above, the technology of the present disclosure can be applied to, for example, the imaging unit 12031. Specifically, the imaging device 100 of FIG. 1 can be applied to the imaging unit 12031. By applying the technology of the present disclosure to the imaging unit 12031, it is possible to miniaturize the imaging device 100 and provide more space for installation.

Note that the above-described embodiment shows an example for realizing the present technology, and there is a corresponding relationship between the matters in the embodiment and the matters specifying the invention in the claims. Similarly, there is a corresponding relationship between the matters specifying the invention in the claims and the matters in the embodiment of the present technology that have the same name. However, the present technology is not limited to the embodiment, and can be realized by making various modifications to the embodiment without departing from the gist of the technology.

It should be noted that the effects described in this specification are merely examples and are not limiting, and other effects may also be obtained.
(1) a mounting board;
a semiconductor chip mounted in an attachment region of a substrate plane of the mounting substrate;
a Peltier module connected to the periphery of the attachment region on the substrate surface.
(2) The Peltier module is
A heat dissipation substrate;
a heat absorption side substrate connected to the mounting substrate;
The semiconductor package according to (1), further comprising a Peltier element disposed between the heat radiation side substrate and the heat absorption side substrate.
(3) The semiconductor package according to (2), wherein both the heat radiation side substrate and the heat absorption side substrate are flexible substrates having openings.
(4) The semiconductor package according to (2), wherein the heat absorption side substrate is a ceramic substrate having an opening.
(5) The semiconductor package according to (4), wherein the heat dissipation side substrate is a ceramic substrate having an opening.
(6) The semiconductor package according to (4), wherein the heat dissipation side substrate is a transparent substrate.
(7) The Peltier module is
A metal plate having an opening;
a heat dissipation side substrate connected to the metal plate;
a heat absorption side substrate connected to the mounting substrate;
The semiconductor package according to any one of (1) to (6), further comprising a Peltier element disposed between the heat radiation side substrate and the heat absorption side substrate.
(8) The metal plate is fixed to a mounting portion,
The semiconductor package according to (7), wherein the linear expansion coefficient and thermal conductivity of the metal plate are greater than those of the heat dissipation side substrate and smaller than those of the mounting portion.
(9) The semiconductor package according to (7) or (8), wherein the Peltier module further includes a sealing resin that seals each side surface of the heat dissipation substrate and the Peltier element.
(10) The semiconductor package according to any one of (1) to (9), wherein the semiconductor chip performs photoelectric conversion of incident light to generate image data.
(11) The semiconductor package according to any one of (1) to (10), further comprising glass for sealing a space formed by the Peltier module and the mounting substrate.
(12) A first application area along an outer periphery of the mounting board, a mounting land to which the Peltier module is connected, and a second application area between the first application area and the mounting land are arranged on the substrate plane;
the mounting land and the first application area are adhered to the Peltier module by a conductive adhesive;
The semiconductor package according to any one of (1) to (12), wherein the second coating area is attached to the Peltier module by a non-conductive adhesive.
(13) a mounting board;
a semiconductor chip mounted in an attachment region of a substrate plane of the mounting substrate;
a Peltier module connected to a periphery of the attachment area of the substrate plane;
and a control unit that supplies a current to the Peltier module.
(14) The electronic device according to (13), wherein the control unit acquires the temperature of the semiconductor chip and supplies the current when the temperature is higher than a predetermined upper limit value.
(15) a chip mounting step of mounting a semiconductor chip on an attachment area of a substrate plane of a mounting substrate;
and a connection step of connecting a Peltier module to a periphery of the attachment area on the substrate surface.

REFERENCE SIGNS LIST 100 Imaging device 110 Control unit 120 Battery remaining capacity measuring unit 130 Battery 140 Image processing unit 150 Memory unit 161 Mounting unit 162 Thermally conductive sheet 163 Screw 200 Semiconductor package 210 Glass 220 Sensor chip 230 Flexible cable 300 Peltier module 310

Metal plate

311, 321, 341 Opening 312 Screw hole 313 Adhesive 320, 340 Ceramic substrate 330

Peltier element

331, 332, 335 Electrode 333 p-type semiconductor 334 n-

type semiconductor

336, 337

Solder

342, 343 Terminal 350 Sealing resin 360

Sapphire substrate

371, 372 Flexible substrate 400 Interposer substrate 411 Temperature sensor 412 Peripheral parts 413 Connector 421 Attachment area 422

Bump

423, 424 Mounting

land

425, 426, 427 Coating area 431

Copper foil

432, 433 Signal line 441 Non-conductive adhesive 442 Conductive adhesive 500 Organic substrate 12031 Imaging unit

Claims

A mounting board;
a semiconductor chip mounted in an attachment region of a substrate plane of the mounting substrate;
a Peltier module connected to the periphery of the attachment region on the substrate surface.
The Peltier module is
A heat dissipation substrate;
a heat absorption side substrate connected to the mounting substrate;
2. The semiconductor package according to claim 1, further comprising a Peltier element disposed between the heat radiation side substrate and the heat absorption side substrate.
3. The semiconductor package according to claim 2, wherein both the heat radiation side substrate and the heat absorption side substrate are flexible substrates having openings.
3. The semiconductor package according to claim 2, wherein the heat absorption side substrate is a ceramic substrate having an opening.
5. The semiconductor package according to claim 4, wherein the heat dissipation side substrate is a ceramic substrate having an opening.
5. The semiconductor package according to claim 4, wherein the heat dissipation side substrate is a transparent substrate.
The Peltier module is
A metal plate having an opening;
a heat dissipation side substrate connected to the metal plate;
a heat absorption side substrate connected to the mounting substrate;
2. The semiconductor package according to claim 1, further comprising a Peltier element disposed between the heat radiation side substrate and the heat absorption side substrate.
The metal plate is fixed to a mounting portion,
8. The semiconductor package according to claim 7, wherein the metal plate has a linear expansion coefficient and a thermal conductivity greater than those of the heat dissipation side substrate and smaller than those of the attachment portion.
The semiconductor package according to claim 7 , wherein the Peltier module further comprises a sealing resin that seals each of the side surfaces of the heat dissipation substrate and the Peltier element.
2. The semiconductor package according to claim 1, wherein the semiconductor chip performs photoelectric conversion of incident light to generate image data.
2. The semiconductor package according to claim 1, further comprising glass for sealing a space formed by the Peltier module and the mounting substrate.
a first application area along an outer periphery of the mounting board, a mounting land to which the Peltier module is connected, and a second application area between the first application area and the mounting land are arranged on the board plane;
the mounting land and the first application area are adhered to the Peltier module by a conductive adhesive;
2. The semiconductor package of claim 1, wherein the second coating area is attached to the Peltier module by a non-conductive adhesive.
A mounting board;
a semiconductor chip mounted in an attachment region of a substrate plane of the mounting substrate;
a Peltier module connected to a periphery of the attachment area of the substrate plane;
and a control unit that supplies a current to the Peltier module.
The electronic device according to claim 13 , wherein the control unit acquires a temperature of the semiconductor chip, and supplies the current when the temperature is higher than a predetermined upper limit value.
a chip mounting step of mounting a semiconductor chip on an attachment area of a substrate surface of a mounting substrate;
and a connection step of connecting a Peltier module to a periphery of the attachment area on the substrate surface.