WO2024104806A1 - Procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde - Google Patents

Procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde Download PDF

Info

Publication number
WO2024104806A1
WO2024104806A1 PCT/EP2023/080813 EP2023080813W WO2024104806A1 WO 2024104806 A1 WO2024104806 A1 WO 2024104806A1 EP 2023080813 W EP2023080813 W EP 2023080813W WO 2024104806 A1 WO2024104806 A1 WO 2024104806A1
Authority
WO
WIPO (PCT)
Prior art keywords
imaging system
illumination
image
design matrix
imaging
Prior art date
Application number
PCT/EP2023/080813
Other languages
German (de)
English (en)
Inventor
Katie Louise Capelli
Rainer Hoch
Martin Schumann
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2024104806A1 publication Critical patent/WO2024104806A1/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/005—Testing of reflective surfaces, e.g. mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • G01M11/30—Testing of optical devices, constituted by fibre optics or optical waveguides
    • G01M11/33—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face
    • G01M11/331—Testing of optical devices, constituted by fibre optics or optical waveguides with a light emitter being disposed at one fibre or waveguide end-face, and a light receiver at the other end-face by using interferometer

Definitions

  • the imaging system is also referred to as a projection system, which together with an illumination system that illuminates the mask forms a projection exposure system, such as is used in particular for microlithography in the manufacture of semiconductor components.
  • a projection system which together with an illumination system that illuminates the mask forms a projection exposure system, such as is used in particular for microlithography in the manufacture of semiconductor components.
  • Imaging quality of an imaging system can be determined or possible image errors of the imaging system can be detected in a spatially resolved manner. Using this information, individual optical elements of the imaging system can then be identified and reworked in such a way that after reinsertion into the imaging system, the image fields have been reduced in such a way that the imaging quality of the imaging system can be increased to a desired level.
  • One method for determining possible image errors is the wavefront detection of illumination beams diffracted multiple times by gratings.
  • illumination rays from known positions in the object-side pupil plane of the imaging system are transmitted to a first diffraction grating arranged in the object-side field plane by the imaging system to a second diffraction grating arranged in the image-side field plane, so that an interferometric image of the illumination rays is produced in the image-side pupil plane, which can be detected with a suitable sensor.
  • the object of the present invention is therefore to create a method and a computer program product for determining image errors in high-resolution imaging systems in which the possible disadvantages from the state of the art do not occur or only occur to a reduced extent.
  • the invention is achieved by a method according to the main claim and a computer program product according to the independent claim.
  • Advantageous further developments are the subject of the dependent claims.
  • the invention relates to a method for determining image errors of high-resolution imaging systems by wavefront measurement, wherein an illumination source is arranged in an object-side pupil plane of the imaging system, a first diffraction grating is arranged in an object-side field plane lying between the illumination source and the imaging system, an interferogram sensor is arranged in an image-side pupil plane and a second diffraction grating is arranged in an image-side field plane lying between the imaging system and the interferogram sensor, wherein one of the two diffraction gratings is arranged in the Field plane in which it is arranged, comprising the steps of: - illuminating the first diffraction grating with illumination beams generated by the illumination source starting from known positions in the object-side pupil plane; - capturing the image of the illumination beam resulting from the diffraction gratings and the imaging system on the interferogram sensor, also comprising second and higher order diffractions; - repeating the above steps with
  • the invention relates to a computer program product or a set of computer program products comprising program parts which, when loaded into a computer or into interconnected computers for calculation, can be used to calculate a design matrix representing the ideal optical properties of the imaging system, wherein the design matrix comprises at least Zero-, first- and second-order diffractions, and are designed to determine values reflecting the image errors of the imaging system on the basis of the images captured by the interferogram sensor and the design matrix.
  • the design matrix comprises at least Zero-, first- and second-order diffractions, and are designed to determine values reflecting the image errors of the imaging system on the basis of the images captured by the interferogram sensor and the design matrix.
  • the illumination can be arranged in an object-side pupil plane, for example, while an object-side field plane can be the reticle plane, for example.
  • the “image-side pupil plane” and “image-side field plane” refer to planes that lie on the side of the imaging system on which the image of an object is usually expected.
  • a camera can be arranged in an image-side pupil plane.
  • An image-side field plane can be the wafer plane, for example.
  • the invention is based on the knowledge that the assumption widespread in the prior art that it is sufficient to consider only the zero- and first-order diffraction in order to determine the imaging quality of an imaging system by wavefront measurement - which is why the known algorithms for determining a design matrix of an imaging system are ultimately limited to these orders - does not result in sufficient accuracy for all applications.
  • post-processing measures determined on the basis of such a design matrix can also result in sufficient imaging quality of the object being examined. imaging system cannot be guaranteed for all applications.
  • the core of the invention is to map the imaging properties of an imaging system as precisely as possible in a design matrix, so that a comparison with recorded interferometric images of exposure rays yields more precise information on possible imaging errors, from which suitable post-processing measures for increasing the imaging quality can be derived more reliably.
  • the actual determination of interferometric images is carried out in a similar way to the known prior art: starting from an illumination source arranged in an object-side pupil plane of the imaging system, defined illumination rays - i.e. those with a known position on and orientation relative to the pupil plane - are emitted into the imaging system.
  • the illumination beam has the same or a comparable wavelength as the illumination provided for the later use of the imaging system.
  • the imaging system is a projection exposure system for microlithography
  • the illumination beam preferably has a wavelength comparable to that provided for exposure during microlithography. In an imaging system provided for EUV microlithography, the wavelength for the illumination beam is therefore, for example, in the range from 5 nm to 30 nm.
  • the illumination source can be arranged directly in the pupil plane; however, it is also possible for the element actually generating the light to be arranged outside the said pupil plane, with optical elements directing the light generated away from the pupil plane into the Pupil plane so that it can be assumed for further consideration that the illumination rays emanating from the pupil plane were generated by an illumination source arranged on the pupil plane. In this case, one can also speak of a "virtual illumination source" on the pupil plane.
  • the illumination beam Before the illumination beam enters the imaging system, it has to pass through a first diffraction grating arranged in the appropriate object-side field plane of the imaging system.
  • the first diffraction grating can be designed in accordance with the state of the art and in particular have a pattern that has been proven there.
  • the incident illumination beam is "fanned out" into the various diffractions of zero, first, second and higher orders, whereby the individual diffractions can be viewed as separate beams according to their order starting from the first diffraction grating, which at least for the most part enter the imaging system and are imaged by it.
  • the imaging system is a projection system for microlithography
  • the first diffraction grating can be arranged, for example, in the plane in which the mask to be projected (also called a reticle) is usually arranged.
  • the first diffraction grating can also be referred to as a reticle diffraction grating.
  • a second diffraction grating is arranged in an image-side field plane of the imaging system, which is also designed as known from the prior art. With the help of this second diffraction grating, the beam paths of the individual diffractions transmitted through the imaging system are diffracted again.
  • At least one of the two diffraction gratings can be moved in the field plane in which it is arranged in order to generate different diffraction patterns depending on the position.
  • the imaging system is a projection system for microlithography
  • the second diffraction grating can be arranged, for example, in the plane in which the semiconductor wafer is usually arranged, onto which the image of the mask or reticle is to be projected.
  • the second diffraction grating is also called a sensor diffraction grating in the context of the present invention.
  • a single pupil plane can be assumed in a model consideration, in which, for example, the numerical aperture of the imaging system can also be defined.
  • parameters of a Zernike polynomial can be determined using appropriate fitting methods for the recorded wavefront images, with any deviation from ideal values (such as zero) providing an indication of an imaging error.
  • the parameters determined in this way can be used together with the design matrix and knowledge of the actual structure of the imaging system to identify post-processing measures for the imaging system or individual elements thereof with which the imaging errors can be reduced.
  • Methods for determining necessary or advantageous post-processing measures for an imaging system e.g. the projection system of a microlithography system, based on a design matrix are known in the state of the art.
  • a representation of the beam paths at the pupil planes in Cartesian coordinates scaled to the angle of refraction is used, ie an integer coordinate step in the Cartesian system of a pupil plane corresponds to a step by the angle of diffraction between two adjacent diffractions and the zero point in the Cartesian coordinate system coincides with a diffraction beam.
  • the coordinates for the object-side pupil plane in which the illumination source is arranged and the objective pupil plane describing the imaging system are scaled to the angle of refraction of the first diffraction grating, while the coordinates for the image-side pupil plane in which the interferogram sensor is arranged are scaled based on the angle of refraction of the second diffraction grating.
  • the angle of refraction of the second diffraction grating is generally a multiple of the angle of refraction of the first diffraction grating corresponding to the magnification factor of the imaging system.
  • the scaled coordinates are defined as follows: Object-side pupil plane: Objective pupil plane: ( ⁇ ⁇ , ⁇ ⁇ ) Image-side pupil plane: ( ⁇ ⁇ , ⁇ ⁇ ) [0034]
  • the design matrix which initially reflects the wave fronts in the objective pupil plane from the images recorded by the interferogram sensor, which can then in turn be used to identify imaging errors of the imaging system or individual components therein and appropriate post-processing measures to reduce the imaging errors.
  • the design matrix can be formulated as with where these derivatives are linearized around the point at which the Zernike factors ⁇ ⁇ .. ⁇ ⁇ are equal to zero.
  • ⁇ ⁇ ( ⁇ ⁇ , ⁇ ⁇ ) is the n-th Zernike polynomial evaluated for the point ⁇ ⁇ ⁇ , ⁇ ⁇ ⁇ and the phase at the point in question - after determining the Zernike parameters - results from the sum of the Zernike polynomials.
  • the complex conjugable functions ⁇ ⁇ ( ⁇ , ⁇ ) and ⁇ ⁇ ( ⁇ , ⁇ ) are the complex diffraction spectra of the first or reticle diffraction grating and the second or sensor diffraction grating for the respective diffraction orders in the x and y directions, whereby the two functions can in turn be set up separately for the x and y directions (cf. indices when used in the formulas above).
  • ⁇ denotes the numerical aperture of the imaging system.
  • ⁇ ⁇ denotes the aperture of the illumination.
  • ⁇ and ⁇ ⁇ represent the diffraction order at the – depending on the index – first or reticle diffraction grating or second or sensor diffraction grating in the x- or y-direction.
  • a vector of the Zernike parameters can be determined based on measured interferogram images with suitable x and y phase steps for each measuring point of the interferogram sensor and - for example - the method of (possibly weighted) least squares: or.
  • ⁇ ⁇ is the phase resulting from the interferogram at the respective point in the object-side pupil plane.
  • the interferogram sensor can be, for example, a two-dimensional CCD array sensor or an active pixel sensor.
  • Figure 1 a schematic representation of a projection exposure system for microlithography with a projection system as the imaging system
  • Figure 2 model representation of the imaging system from Figure 1 for determining image errors, as the basis of the invention
  • Figure 3 schematic representation of the improvement in the accuracy of a design matrix determined according to the invention compared to the prior art.
  • a projection exposure system 1 for microlithography is shown in a schematic meridional section.
  • the projection exposure system 1 comprises an illumination system 10 and a projection system 20.
  • the illumination system 10 comprises an exposure radiation source 13 which, in the exemplary embodiment shown, emits illumination radiation at least comprising useful light in the EUV range, i.e. in particular with a wavelength between 5 nm and 30 nm.
  • the exposure radiation source 13 can be a plasma source, for example an LPP source (laser produced plasma) or a DPP source (gas discharged produced plasma). It can also be a synchrotron-based radiation source.
  • the exposure radiation source 13 can also be a free-electron laser (FEL).
  • FEL free-electron laser
  • the collector 14 can be a collector with one or more ellipsoidal and/or hyperboloidal reflection surfaces.
  • the at least one reflection surface of the collector 14 can be exposed to the illumination radiation in grazing incidence (GI), i.e. with angles of incidence greater than 45°, or in normal incidence (NI), i.e. with angles of incidence less than 45°.
  • GI grazing incidence
  • NI normal incidence
  • the collector 14 can be used on the one hand to optimize its reflectivity for the useful radiation and on the other hand, it can be structured and/or coated to suppress stray light.
  • the illumination radiation propagates through an intermediate focus in an intermediate focal plane 15.
  • the intermediate focal plane 15 can in principle be used for the - also structural - separation of the illumination system 10 into a radiation source module, having the exposure radiation source 13 and the collector 14, and the illumination optics 16 described below. With a corresponding separation, the radiation source module and illumination optics 16 then together form a modularly constructed illumination system 10.
  • the illumination optics 16 comprise a deflection mirror 17.
  • the deflection mirror 17 can be a flat deflection mirror or alternatively a mirror with an effect that influences the beam beyond the pure deflection effect.
  • the deflection mirror 15 can be designed as a spectral filter that separates a useful light wavelength of the illumination radiation from false light of a different wavelength.
  • the deflection mirror 17 deflects the radiation from the exposure radiation source 13 onto a first facet mirror 18. If the first facet mirror 18 is arranged - as in the present case - in a plane of the illumination optics 16 that is optically conjugated to the reticle plane 12 as a field plane, it is also referred to as a field facet mirror. [0061]
  • the first facet mirror 18 comprises a plurality of micromirrors (not shown in detail) that can be individually pivoted about two axes running perpendicular to one another. for the controllable formation of facets.
  • the first facet mirror 18 is therefore a microelectromechanical system (MEMS system), as is also described, for example, in DE 102008 009 600 A1.
  • MEMS system microelectromechanical system
  • a second facet mirror 19 is arranged downstream of the first facet mirror 18, so that a double-faceted system is produced, the basic principle of which is also referred to as a honeycomb condenser (fly's eye integrator). If the second facet mirror 19 - as in the illustrated embodiment - is arranged in a pupil plane of the illumination optics 16, it is also referred to as a pupil facet mirror.
  • the second facet mirror 19 can also be arranged at a distance from a pupil plane of the illumination optics 4, whereby the combination of the first and second facet mirrors 18, 19 results in a specular reflector, as described, for example, in US 2006/0132747 A1, EP 1614 008 B1 and US 6,573,978.
  • the second facet mirror 19 also comprises a plurality of micromirrors that can be individually pivoted about two axes running perpendicular to one another. For further explanation, reference is made to DE 102008 009 600 A1.
  • the individual facets of the first facet mirror 18 are imaged in the object field 11, whereby this is usually only an approximate image.
  • the second facet mirror 19 is the last bundle-forming or actually the last mirror for the illumination radiation in the beam path in front of the object field 11.
  • One of the facets of the second facet mirror 19 is exactly one of the facets of the first facet mirror 18 to form an illumination channel for illuminating the object field 11. This can result in particular in illumination according to the Köhler principle.
  • the facets of the first facet mirror 18 are each imaged by an associated facet of the second facet mirror 19, superimposed on one another, to illuminate the object field 5.
  • the illumination of the object field 11 is as homogeneous as possible. It preferably has a uniformity error of less than 2%. The field uniformity can be achieved by superimposing different illumination channels.
  • the intensity distribution in the entrance pupil of the projection system 20 described below can also be set.
  • This intensity distribution is also referred to as the illumination setting.
  • the second facet mirror 19 is not arranged exactly in a plane that is optically conjugated to a pupil plane of the projection system 20.
  • the pupil facet mirror 19 can be arranged tilted relative to a pupil plane of the projection system 20, as is described, for example, in DE 102017 220 586 A1.
  • the second facet mirror 19 is arranged in a surface that is conjugated to the entrance pupil of the projection system 20. Deflecting mirror 17 and the two facet mirrors 18, 19 are arranged tilted both relative to the object plane 12 and relative to each other.
  • a transmission optics comprising one or more mirrors can be provided in the beam path between the second facet mirror 19 and the object field 11.
  • the transmission optics can in particular comprise one or two mirrors for vertical incidence (NI mirrors, normal incidence mirrors) and/or one or two mirrors for grazing incidence (GI mirrors, gracing incidence mirrors).
  • the projection system 20 comprises a plurality of mirrors 25, M i , which are numbered according to their arrangement in the beam path of the projection exposure system 1.
  • the projection system 20 comprises six mirrors 25, M 1 to M 6 . Alternatives with four, eight, ten, twelve or another number of mirrors 25, M i are also possible.
  • the penultimate mirror 25, M 5 and the last mirror 25, M 6 each have a passage opening for the illumination radiation, which means that the projection system 20 shown is a double-obscured optics.
  • the projection system 20 has a image-side numerical aperture, which is greater than 0.3 and which can also be greater than 0.6 and which can be, for example, 0.7 or 0.75.
  • the reflection surfaces of the mirrors 25, M i can be designed as free-form surfaces without a rotational symmetry axis.
  • the reflection surfaces of the mirrors 25, M i can also be designed as aspherical surfaces with exactly one rotational symmetry axis of the reflection surface shape.
  • the mirrors 25, M i can, just like the mirrors of the illumination optics 16, have highly reflective coatings for the illumination radiation. These coatings can be designed as multilayer coatings, in particular with alternating layers of molybdenum and silicon.
  • the projection system 20 has a large object-image offset in the y-direction between a y-coordinate of a center of the object field 11 and a y-coordinate of the center of the image field 21. This object-image offset in the y-direction can be approximately as large as a z-distance between the object plane 12 and the image plane 22.
  • the projection system 20 can in particular be designed anamorphically, ie it has in particular different imaging scales ⁇ x , ⁇ y in the x and y directions.
  • a magnification ratio ⁇ of 0.25 corresponds to a reduction in the ratio 4:1, while a magnification ratio ⁇ of 0.125 results in a reduction in the ratio 8:1.
  • a positive sign for the magnification ratio ⁇ means an image without image inversion, a negative sign means an image with image inversion.
  • Other image scales are also possible.
  • Image scales ⁇ x , ⁇ y with the same sign and absolutely the same in the x and y directions are also possible.
  • the number of intermediate image planes in the x and y directions in the beam path between the object field 11 and the image field 21 can be the same or different, depending on the design of the projection system 20. Examples of projection systems 20 with different numbers of such intermediate images in the x and y directions are known from US 2018/0074303 A1.
  • the projection system 20 can in particular have a homocentric entrance pupil. This can be accessible. But it can also be inaccessible.
  • a reticle 30 also called a mask
  • a reticle 30 also called a mask
  • the reticle 30 is held by a reticle holder 31.
  • the reticle holder 31 can be displaced in particular in a scanning direction via a reticle displacement drive 32.
  • the scanning direction runs in the x-direction.
  • a structure on the reticle 30 is imaged onto a light-sensitive layer of a wafer 35 arranged in the region of the image field 21 in the image plane 22.
  • the wafer 35 is held by a wafer holder 36.
  • the wafer holder 36 can be displaced in particular along the x-direction via a wafer displacement drive 37.
  • the displacement of the reticle 30 on the one hand via the reticle displacement drive 32 and the wafer 35 on the other hand via the wafer displacement drive 37 can be synchronized with each other.
  • the projection exposure system 1 shown in Figure 1 according to the above description essentially represents known prior art.
  • the projection system 20, which represents an extremely high-resolution imaging system 20 has no or only minor image errors.
  • the imaging quality of the imaging system 20 by means of a wavefront measurement and, if necessary, to carry out post-processing on the imaging system 20 or its various optical elements, namely the mirrors M 1 to M 6 , until the desired imaging quality is achieved.
  • the invention provides that second order diffraction and/or further higher orders are also taken into account.
  • a determination of interferometric images is carried out which is basically known from the prior art, but in which second or higher order diffractions are also imaged.
  • the determination of interferometric images takes place starting from an illumination source arranged in an object-side pupil plane 100 of the imaging system 20, with the defined illumination beam 101 - ie, the position on and orientation relative to the pupil plane 100 is known - is emitted into the imaging system 20.
  • the illumination beam 101 is a beam of the same wavelength as that used in the projection exposure system 1 according to Figure 1.
  • the exposure system 10 of the projection exposure system 1 can even be used as a source for the illumination beam 101 and form a virtual illumination source: if the facet mirror 19 (see Figure 1) is arranged in the pupil plane 101 of the imaging system 20, suitable illumination beams 101 can be introduced into the imaging system by appropriately controlling the facet mirrors 18, 19 of the illumination system 10, which can be viewed as emanating from the pupil plane 101, even if the actual exposure radiation source 13 is arranged at a distance from it. Due to the identity of the exposure radiation source 13, an illumination beam 101 generated in this way then has the same wavelength that is later used when exposing semiconductor wafers and thus when the imaging system is actually used for its intended purpose.
  • the illumination beam 101 Before the illumination beam 101 actually enters the imaging system 20, it has to pass through a first diffraction grating 103 arranged in the appropriate object-side field plane 102 of the imaging system.
  • the incident illumination beam 101 is "fanned out" into the various diffractions of zeroth, first, second and higher orders, whereby the individual diffractions can be viewed as separate beams 104 according to their order starting from the first diffraction grating 103, which at least for the most part enter the imaging system 20 and are imaged by it.
  • the diffraction grating 103 can in particular be a reflective diffraction grating, as is known from the prior art, which can be arranged, for example, in the reticle plane 12 of the projection exposure system 1. It is essential that the first diffraction grating 103 is arranged in an image-side field plane of the imaging system 20.
  • a second diffraction grating 106 is arranged in an image-side field plane 105 of the imaging system 20, with which the beam paths of the individual diffractions 104 transmitted by the imaging system 20 are diffracted again. The second diffraction grating 106 can be moved in the field plane 105.
  • the second diffraction grating 105 can be arranged in particular in the image plane 22, wherein the wafer holder 36 with the wafer displacement drive 37 can be used to move the second diffraction grating 106.
  • the mathematical model according to Figure 2a assumes a single pupil plane 107, in which the numerical aperture 108 of the imaging system 20 can also be defined, regardless of its design and, for example, the actual number of intermediate pupil or field planes.
  • the interferogram sensor 110 is a two-dimensional CCD array sensor.
  • various images of the wave fronts of defined illumination beams 101 can be determined.
  • a design matrix can be determined algorithmically - as explained in detail in the general part of the description. In order to avoid detailed repetitions in this regard, reference is made to the part of the description mentioned for an explanation of the creation of the design matrix.
  • the design matrix can then be used to determine image errors of the imaging system together with the images captured by the interferogram sensor. Individual optical elements of the imaging system 20 can then be specifically post-processed in order to further increase the image quality.
  • Figure 3 shows an example of the improvements in the accuracy of the design matrix that can be achieved by the method according to the invention compared to the prior art: the Zernike coefficients determined by the method according to the invention (filled columns) reflect the imaging errors much more accurately than the Zernike coefficients determined according to the prior art (line). Accordingly, necessary post-processing can also be defined more precisely, which overall results in a higher imaging quality.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

L'invention concerne un procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde, et un produit programme d'ordinateur correspondant. Selon l'invention, afin de déterminer des erreurs d'image d'un système d'imagerie, on utilise une matrice de conception qui prend en considération des diffractions du deuxième ordre et/ou d'ordres supérieurs en plus des diffractions d'ordre zéro et du premier ordre. Il est ensuite possible de déterminer plus précisément des erreurs d'imagerie sur la base d'images de système d'imagerie enregistrées par un capteur d'interférogramme de faisceaux d'éclairage connus, deux fois diffractés.
PCT/EP2023/080813 2022-11-15 2023-11-06 Procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde WO2024104806A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102022212136.8 2022-11-15
DE102022212136.8A DE102022212136A1 (de) 2022-11-15 2022-11-15 Verfahren zur Ermittlung von Bildfehlern hochauflösender Abbildungssysteme per Wellenfrontmessung

Publications (1)

Publication Number Publication Date
WO2024104806A1 true WO2024104806A1 (fr) 2024-05-23

Family

ID=84534020

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2023/080813 WO2024104806A1 (fr) 2022-11-15 2023-11-06 Procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde

Country Status (2)

Country Link
DE (1) DE102022212136A1 (fr)
WO (1) WO2024104806A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102022212136A1 (de) 2022-11-15 2023-01-12 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung von Bildfehlern hochauflösender Abbildungssysteme per Wellenfrontmessung

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573978B1 (en) 1999-01-26 2003-06-03 Mcguire, Jr. James P. EUV condenser with non-imaging optics
DE10224363A1 (de) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Verfahren zur Bestimmung von Wellenfrontaberrationen
US20060132747A1 (en) 2003-04-17 2006-06-22 Carl Zeiss Smt Ag Optical element for an illumination system
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
US20170336714A1 (en) * 2014-12-17 2017-11-23 Carl Zeiss Smt Gmbh Projection exposure apparatus with wavefront measuring device and optical wavefront manipulator
US20180074303A1 (en) 2015-04-14 2018-03-15 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure unit including same
DE102017220586A1 (de) 2017-11-17 2019-05-23 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel, Beleuchtungsoptik und optisches System für eine Projek-tionsbelichtungsanlage
KR20200116966A (ko) * 2018-01-31 2020-10-13 에이에스엠엘 네델란즈 비.브이. 광학 수차를 결정하기 위한 방법 및 장치
CN108139682B (zh) * 2015-10-02 2020-12-25 Asml荷兰有限公司 量测方法和设备、计算机程序及光刻系统
DE102022212136A1 (de) 2022-11-15 2023-01-12 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung von Bildfehlern hochauflösender Abbildungssysteme per Wellenfrontmessung

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6573978B1 (en) 1999-01-26 2003-06-03 Mcguire, Jr. James P. EUV condenser with non-imaging optics
DE10224363A1 (de) * 2002-05-24 2003-12-04 Zeiss Carl Smt Ag Verfahren zur Bestimmung von Wellenfrontaberrationen
US20060132747A1 (en) 2003-04-17 2006-06-22 Carl Zeiss Smt Ag Optical element for an illumination system
EP1614008B1 (fr) 2003-04-17 2009-12-02 Carl Zeiss SMT AG Element optique pour systeme d eclairage
DE102008009600A1 (de) 2008-02-15 2009-08-20 Carl Zeiss Smt Ag Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie
US20170336714A1 (en) * 2014-12-17 2017-11-23 Carl Zeiss Smt Gmbh Projection exposure apparatus with wavefront measuring device and optical wavefront manipulator
US20180074303A1 (en) 2015-04-14 2018-03-15 Carl Zeiss Smt Gmbh Imaging optical unit and projection exposure unit including same
CN108139682B (zh) * 2015-10-02 2020-12-25 Asml荷兰有限公司 量测方法和设备、计算机程序及光刻系统
DE102017220586A1 (de) 2017-11-17 2019-05-23 Carl Zeiss Smt Gmbh Pupillenfacettenspiegel, Beleuchtungsoptik und optisches System für eine Projek-tionsbelichtungsanlage
KR20200116966A (ko) * 2018-01-31 2020-10-13 에이에스엠엘 네델란즈 비.브이. 광학 수차를 결정하기 위한 방법 및 장치
DE102022212136A1 (de) 2022-11-15 2023-01-12 Carl Zeiss Smt Gmbh Verfahren zur Ermittlung von Bildfehlern hochauflösender Abbildungssysteme per Wellenfrontmessung

Also Published As

Publication number Publication date
DE102022212136A1 (de) 2023-01-12

Similar Documents

Publication Publication Date Title
DE102018210315B4 (de) Verfahren zur Erfassung einer Struktur einer Lithografiemaske sowie Vorrichtung zur Durchführung des Verfahrens
DE102010001388A1 (de) Facettenspiegel zum Einsatz in der Mikrolithografie
DE102008043162A1 (de) Abbildende Optik sowie Projektionsbelichtungsanlage für die Mikrolithographie mit einer derartigen abbildenden Optik
EP3298446A2 (fr) Procédé de mesure et ensemble de mesure pour un système optique de formation d'image
DE102009048553A1 (de) Katadioptrisches Projektionsobjektiv mit Umlenkspiegeln und Projektionsbelichtungsverfahren
DE102008033341A1 (de) Projektionsobjektiv
EP1845417A2 (fr) Système d'éclairage doté d'un objectif à zoom
WO2024104806A1 (fr) Procédé de détermination d'erreurs d'image de systèmes d'imagerie haute résolution par mesure de front d'onde
DE102009025655A1 (de) Optische Komponente zum Einsatz in einem Beleuchtungssystem für eine Projektionsbelichtungsanlage der EUV-Mikrolithographie
WO2024194297A1 (fr) Dispositif de commande, système optique, installation de lithographie et procédé
DE102011005826A1 (de) Optische Vorrichtung
DE102015209173B4 (de) Verfahren zum herstellen eines objektivs für eine lithographieanlage
WO2024110450A1 (fr) Système optique, installation de lithographie et procédé pour faire fonctionner un système optique d'une installation de lithographie
DE102020210829A1 (de) Pupillenfacettenspiegel für eine Beleuchtungsoptik einer Projektionsbelichtungsanlage
DE102017202863A1 (de) Verfahren und Vorrichtung zum Ermitteln einer Position und/oder Orientierung eines optischen Elements
WO2023186960A1 (fr) Dispositif de commande, système optique, installation de lithographie et procédé
DE102023203225A1 (de) Abbildende EUV-Optik zur Abbildung eines Objektfeldes in ein Bildfeld
DE102022210158A1 (de) Anordnung, Verfahren und Computerprogrammprodukt zur Kalibrierung von Facettenspiegeln
DE102016207487A1 (de) Mikrolithographische Projektionsbelichtungsanlage
WO2019134773A1 (fr) Miroir à facettes de pupille, optique et système optique d'une installation de lithographie par projection
DE102022203369A1 (de) Anordnung, Verfahren und Computerprogrammprodukt zur Kalibrierung von Facettenspiegeln
WO2015036225A1 (fr) Optique d'éclairage pour lithographie par projection dans l'extrême ultraviolet (euv)
DE102018201457A1 (de) Beleuchtungsoptik für die Projektionslithographie
DE102020213837A1 (de) Facettenspiegel-Vorrichtung
DE102012210073A1 (de) Beleuchtungsoptik für die EUV- Projektionslithographie

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23802180

Country of ref document: EP

Kind code of ref document: A1