WO2024103600A1

WO2024103600A1 - Data management method and apparatus, electronic device, and nonvolatile readable storage medium

Info

Publication number: WO2024103600A1
Application number: PCT/CN2023/085274
Authority: WO
Inventors: 王敏; 张闯; 李仁刚
Original assignee: 苏州元脑智能科技有限公司
Priority date: 2022-11-17
Filing date: 2023-03-30
Publication date: 2024-05-23
Also published as: CN115509466B; CN115509466A

Abstract

The present application relates to the technical field of data storage and discloses a data management method and apparatus, an electronic device, and a nonvolatile readable storage medium. The method comprises: determining a first storage block and a second storage block in a memory; according to a preset division mode, dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part; and recording target data to a first target page and a second target page in the first part and a third target page and a fourth target page in the fourth part, wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part. Therefore, the present application improves the accuracy of data recording.

Description

A data management method, device, electronic device and non-volatile readable storage medium

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to the Chinese patent application filed with the China Patent Office on November 17, 2022, with application number 202211461907.9, and application name “A data management method, device, electronic device and storage medium”, all contents of which are incorporated by reference in this application.

Technical Field

The present application relates to the technical field of data storage, and more specifically, to a data management method, a device, an electronic device, and a non-volatile readable storage medium.

Background technique

NAND Flash is currently widely used in various storage scenarios. An ideal flash memory should have the characteristics of small size, fast operation speed, low programming voltage, strong anti-erasure capability, and long retention time.

NAND Flash is composed of blocks, and blocks are composed of pages. Blocks are the smallest unit of erasure and page is the smallest unit of writing. During use, various types of information will be recorded, including bad block information, load balancing information, garbage collection information, etc. Therefore, the recording of such information is very important. Generally, several valid blocks are selected from the entire NAND as management blocks to record information.

It is undeniable that management blocks can also make mistakes, which is generally not allowed to happen, because errors in management information recording will lead to abnormal use of NAND, information cannot be restored, and in serious cases, it will be scrapped, which means that the robustness of NAND has deteriorated. Therefore, how to effectively use block recording information to avoid errors as much as possible is a very important research topic.

The dual-block synchronous recording method is currently a commonly used recording method: it refers to selecting two valid blocks from the NAND bad block table to record information. The recording method is to synchronously write from page 0 in order, and when all pages of the entire block are full, perform a crash erase action, and then proceed to the next round of recording. This method can usually avoid UNC (an error in hard disk detection) in a single block, and can promptly synchronize and restore valid information from another block.

As mentioned above, when a block has UNC, another block can be used to restore the information through information synchronization. However, pages with the same sequence number in different blocks are prone to UNC at the same time, so during the recording process, the probability of two pages having UNC at the same time is high. The block is filled during the recording process, and it needs to be erased and written at the same time. If power is lost at this time, all information will be lost.

Therefore, how to improve the accuracy of data recording is a technical problem that those skilled in the art need to solve.

Summary of the invention

The purpose of the present application is to provide a data management method, device, electronic device and non-volatile readable storage medium to improve the accuracy of data recording.

To achieve the above objectives, the present application provides a data management method, comprising:

Determining a first storage block and a second storage block in a memory;

Dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part according to a preset division method;

The target data is recorded to the first target page and the second target page in the first part, and the third target page and the fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.

Wherein, determining the first storage block and the second storage block in the memory includes:

A first memory block and a second memory block are determined in a memory using a high temperature technology screening method.

Wherein, determining the first storage block and the second storage block in the memory by using the high temperature technology screening method includes:

Writing the same target content to all storage blocks in the memory;

Reading the contents of all storage blocks, and determining a first error rate of each storage block by comparing the read contents with target contents;

Performing a heating operation on the memory, reading the contents of all the memory blocks, and determining the second error rate of each memory block by comparing the read contents with the target contents;

The two storage blocks having the smallest difference between the first error rate and the second error rate are determined as the first storage block and the second storage block.

Writing the same target content to all storage blocks in the memory;

Perform a warm-up operation on the memory, read the contents of all memory blocks, and compare the read contents. The error rate of each storage block is determined by the content of the target;

The two storage blocks with the lowest error rates are determined as the first storage block and the second storage block.

The step of recording the target data to the first target page and the second target page in the first part and the third target page and the fourth target page in the fourth part includes:

The target data is recorded to the first target page and the second target page in the first part according to the page order in the first part, and the target data is recorded to the third target page and the fourth target page in the fourth part according to the page order in the fourth part; wherein the second target page is the next page of the first target page, and the fourth target page is the next page of the third target page.

The method further includes recording the target data to the first target page and the second target page in the first part according to the page sequence in the first part, and recording the target data to the third target page and the fourth target page in the fourth part according to the page sequence in the fourth part.

When a read command of target data is received, the last piece of data in the first part is read.

After reading the last piece of data in the first part, it also includes:

If the last data in the first part is read incorrectly, the second to last data in the first part is read.

After reading the second to last piece of data in the first part, the following is also included:

If the last piece of data and the second to last piece of data in the first part are both read incorrectly, the last piece of data in the fourth part is read.

Among them, after reading the last piece of data in the fourth part, it also includes:

If the last data in the fourth part is read incorrectly, the second to last data in the fourth part is read.

The target data is the management information of the memory, and the management information includes any one or a combination of any several of the bad block information, load balancing information, and garbage collection information.

After recording the target data to the first target page and the second target page in the first part and the third target page and the fourth target page in the fourth part, the method further includes:

When the first part is full, all data in the first part is erased;

Read the last piece of data in the fourth part and record the last piece of data in the first part;

Erase all data in the fourth part and synchronize the last data in the first part to the fourth part.

The method further includes recording the target data to the first target page and the second target page in the first part and recording the target data to the third target page and the fourth target page in the fourth part.

If a power failure exception occurs in the second storage block, the last piece of data in the first part is synchronized to the fourth part after the second storage block is powered on.

To achieve the above objectives, the present application provides a data management device, comprising:

A determination module, configured to determine a first storage block and a second storage block in a memory;

A division module, used for dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part according to a preset division method;

A recording module is used to record target data to a first target page and a second target page in a first part, and a third target page and a fourth target page in a fourth part; wherein an offset of the first target page in the first part is the same as an offset of the third target page in the fourth part, and an offset of the second target page in the first part is the same as an offset of the fourth target page in the fourth part.

The determination module is specifically used to determine the first storage block and the second storage block in the memory by using a high temperature technology screening method.

Among them, the determination module is specifically used to: write the same target content to all storage blocks in the memory; read the contents of all storage blocks, and determine the first error rate of each storage block by comparing the read content with the target content; perform a heating operation on the memory, read the contents of all storage blocks, and determine the second error rate of each storage block by comparing the read content with the target content; determine the two storage blocks with the smallest difference between the first error rate and the second error rate as the first storage block and the second storage block.

Among them, the determination module is specifically used to: write the same target content to all storage blocks in the memory; perform a heating operation on the memory, read the contents of all storage blocks, and determine the error rate of each storage block by comparing the read content with the target content; determine the two storage blocks with the lowest error rate as the first storage block and the second storage block.

Among them, the recording module is specifically used to: record the target data to the first target page and the second target page in the first part according to the page order in the first part, and record the target data to the third target page and the fourth target page in the fourth part according to the page order in the fourth part; wherein the second target page is the page after the first target page, and the fourth target page is the page after the third target page.

Among them, it also includes:

The first reading module is used to read the last piece of data in the first part when receiving a command to read the target data.

Among them, it also includes:

The second reading module is used to read the second to last piece of data in the first part if the last piece of data in the first part is read incorrectly.

Among them, it also includes:

The third reading module is used to read the last piece of data in the fourth part if both the last piece of data and the second to last piece of data in the first part are read incorrectly.

Among them, it also includes:

The fourth reading module is used to read the second to last piece of data in the fourth part if the last piece of data in the fourth part is read incorrectly.

Among them, it also includes:

The erasing module is used to erase all data in the first part when the first part is full; read the last data in the fourth part and record the last data in the first part; erase all data in the fourth part and synchronize the last data in the first part to the fourth part.

Among them, it also includes:

The synchronization module is used for synchronizing the last piece of data in the first part to the fourth part after the second storage block is powered on if a power failure occurs in the second storage block.

To achieve the above objectives, the present application provides an electronic device, including:

Memory for storing computer programs;

A processor is used to implement the steps of the above-mentioned data management method when executing a computer program.

To achieve the above objectives, the present application provides a non-volatile readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the steps of the above data management method are implemented.

It can be seen from the above scheme that a data management method provided by the present application includes: determining a first storage block and a second storage block in a memory; dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part according to a preset division method; recording the target data to the first target page and the second target page in the first part, and the third target page and the fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.

The data management method provided by the present application adopts a dual-block asynchronous recording method. When UNC appears simultaneously in pages with the same sequence number in different blocks, that is, when UNC appears simultaneously in the first part of the first storage block and the third part of the second storage block, data can be recorded based on the fourth part of the second storage block. Recording and reading. That is, the present application can ensure that important information can be accurately recorded and read, can repair NAND information in a timely manner to the greatest extent, and ensure that the NAND system will not be paralyzed due to information recording errors. It can be seen that the data management method provided by the present application improves the accuracy of data recording. The present application also discloses a data management device, an electronic device, and a non-volatile readable storage medium, which can also achieve the above technical effects.

It should be understood that the foregoing general description and the following detailed description are exemplary only and are not restrictive of the present application.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. The drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific implementation methods, they are used to explain the present disclosure, but do not constitute a limitation to the present disclosure. In the drawings:

FIG1 is a flow chart of a data management method according to an exemplary embodiment;

FIG2 is a flow chart of another data management method according to an exemplary embodiment;

FIG3 is a structural diagram of a data management device according to an exemplary embodiment;

Fig. 4 is a structural diagram of an electronic device according to an exemplary embodiment.

Detailed ways

The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application. In addition, in the embodiments of the present application, "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence.

The embodiment of the present application discloses a data management method, which improves the accuracy of data recording.

Referring to FIG. 1 , a flow chart of a data management method according to an exemplary embodiment is shown. As shown in FIG. 1 , the method includes:

S101: Determine a first storage block and a second storage block in a memory;

In this embodiment, two storage blocks with lower error rates are determined in the memory as recording targets. The data storage blocks, namely the first storage block blockA and the second storage block blockB, the memory in this embodiment may be specifically NAND. In some implementations, this step may include: using a high temperature technology screening method to determine the first storage block and the second storage block in the memory.

As a feasible implementation method, a high temperature technology screening method is used to determine a first storage block and a second storage block in a memory, including: writing the same target content to all storage blocks in the memory; performing a heating operation on the memory, reading the contents of all storage blocks, and determining the error rate of each storage block by comparing the read content with the target content; and determining the two storage blocks with the lowest error rate as the first storage block and the second storage block.

In the specific implementation, the entire memory is erased and the same target content is written to all storage blocks in the memory, such as all 0s. All 1s are avoided as much as possible, because the NAND content after erasure is all 1s, and the voltage jump cannot be maximized at this time. The memory is placed in a high-temperature box for several hours of heating operation, the memory is taken out, and the memory is read. The error rate of all storage blocks is counted, and the two storage blocks with the lowest error rate are selected as the first storage block and the second storage block, which are distributed on the parity block.

As another feasible implementation, a high temperature technology screening method is used to determine a first storage block and a second storage block in a memory, including: writing the same target content to all storage blocks in the memory; reading the content of all storage blocks, and determining a first error rate of each storage block by comparing the read content with the target content; performing a heating operation on the memory, reading the content of all storage blocks, and determining a second error rate of each storage block by comparing the read content with the target content; and determining two storage blocks with the smallest difference between the first error rate and the second error rate as the first storage block and the second storage block.

In the specific implementation, the entire memory is erased and the same target content is written to all storage blocks in the memory, such as all 0s. All 1s are avoided as much as possible, because the NAND content after erasure is all 1s, and the voltage jump cannot be maximized at this time. The entire memory is read to count the error rates of all storage blocks. The memory is placed in a high-temperature box for several hours of heating operation, and the memory is taken out and read from the memory to count the error rates of all storage blocks. The two storage blocks with the smallest error rate difference are selected as the first storage block and the second storage block, which are distributed on the parity block.

S102: dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part according to a preset division method;

In this step, the first storage block and the second storage block are divided into two parts in the same way, that is, the first storage block is divided into the first part and the second part, and the second storage block is divided into the third part and the fourth part. The first part, the second part, the third part and the fourth part all contain multiple pages, and the offset of the first part in the first storage block is the same as the offset of the third part in the second storage block. The offset of the second part in the first storage block is the same as the offset of the fourth part in the second storage block, that is, the first part and the third part are prone to UNC at the same time, and the second part and the fourth part are prone to UNC at the same time.

S103: Record the target data to the first target page and the second target page in the first part, and the third target page and the fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.

In a specific implementation, the target data is recorded to the first target page and the second target page in the first part according to the page order in the first part, and the target data is recorded to the third target page and the fourth target page in the fourth part according to the page order in the fourth part; wherein the second target page is the next page of the first target page, and the fourth target page is the next page of the third target page. The target data in this embodiment may be management information of the memory, and the management information may include bad block information, load balancing information, garbage collection information, etc., which is not specifically limited in this embodiment.

For a block with N pages, the recording method generally starts from page0 and ends at page(N-1). For example, blockA is divided into the first part pageA and the second part pageB, and blockB is divided into the third part pageA and the fourth part pageB. For the convenience of recording, all pageA are numbered from 0, and all pageB are also numbered from 0. The i-th page is recorded as pageAi and pageBi respectively. Only pageA is written in the recording process in blockA, and only pageB is written in blockB. Moreover, in order to ensure the reliability of information, two pages are repeatedly written in each block during the information recording process. The information recorded by pageA(x) of blockA = the information recorded by pageA(x+1) of blockA, x is an even serial number, and the information recorded by pageB(x) of blockB = the information recorded by pageB(x+1) of blockB, and: the information recorded by pageAi of blockA = the information recorded by pageBi of blockB.

The data management method provided in the embodiment of the present application adopts a dual-block asynchronous recording method, and UNC appears simultaneously in pages with the same sequence number in different blocks, that is, when UNC appears simultaneously in the first part of the first storage block and the third part of the second storage block, data can be recorded and read based on the fourth part of the second storage block. That is, the embodiment of the present application can ensure that important information can be accurately recorded and read, and can repair NAND information in a timely manner to the greatest extent, ensuring that the NAND system will not be paralyzed due to errors in information recording. It can be seen that the data management method provided in the embodiment of the present application improves the accuracy of data recording.

Based on the above embodiment, in some implementations, the method further includes: when a read command of the target data is received, reading the last data in the first part. If the last data in the first part is read incorrectly, the second to last data in the first part is read. If the last data in the first part and the second to last data in the fourth part are both read incorrectly, the last data in the fourth part is read. If the last data in the fourth part is read incorrectly, the second to last data in the fourth part is read.

In the specific implementation, read the last valid record of blockA. If UNC is not generated, valid information is obtained. Read the last valid record of blockA. If UNC is generated, read the penultimate valid information. If UNC is not generated, valid information is obtained. Read the last two records of pageA. If both are UNC, read the last two records of blockB until a non-UNC record is found.

The embodiment of the present application discloses a data management method. Compared with the previous embodiment, this embodiment further explains and optimizes the technical solution. Specifically:

Referring to FIG. 2 , a flow chart of another data management method according to an exemplary embodiment is shown. As shown in FIG. 2 , the method includes:

S201: When the first part is full, erase all data in the first part;

S202: Read the last piece of data in the fourth part, and record the last piece of data in the first part;

S203: Erasing all data in the fourth part, and synchronizing the last piece of data in the first part to the fourth part.

It is understandable that the arrangement of pageA and pageB of different MLC (Multi-Level Cell) NAND is not consistent, and the total number will also be different. When pageA in blockA or pageB in blockB is full, the other block is often not full. At this time, synchronization processing is required. For example, if blockA is full, it is necessary to perform an erase operation, read the last valid information of blockB, and update it to pageA0 and pageAl of blockA. At this time, blockB is erased, and then the valid information of blockA is synchronized to pageB0 and pageB1 of blockB.

Based on the above embodiment, in some implementation methods, it further includes: if a power failure occurs in the second storage block, after the second storage block is powered on, the last piece of data in the first part is synchronized to the fourth part.

In the specific implementation, if block A has been recorded and block B has not been recorded, and a power outage occurs, the valid information of block A can be synchronized to block B. In other cases, if a power outage occurs, the last valid record of block A is read after restart.

The following introduces an application embodiment provided by the present application, which is illustrated by L06B NAND, which includes 512 blocks, and a single block has 256 pages.

Step 1: High-temperature filter blocks, write all blocks (except bad blocks and block0, block1) 0x00, read the BER (Bit Error Ratio) of each block at this time, put it in a high temperature box at about 85 degrees for about a day, re-read the BER of each block, and select the two blocks with lower error rate, namely blockA and blockB. Block9 and block20 are selected in the test.

Step 2: blockA only writes pageA. When it encounters pageB, it fills it with all 1s. blockB only writes pageB. When it encounters pageA, it fills it with all 1s. Each valid information will be repeated twice for the two blocks, that is, the valid information is actually recorded four times.

Step 3: When blockA is full, erase blockA and synchronize the information of blockB to blockA. Then, erase blockB and synchronize the valid information of blockA to blockB.

Conduct the following tests to ensure accurate data:

1. Record a single piece of information, read blockA pageA0 and pageA1, blockB pageB0 and pageB1, compare the contents, and they are consistent;

2. Read data. If pageA1 of blockA returns an error, read pageA0 to obtain the record.

3. Both records in blockA are wrong. Valid records can be read from pageB0 or pageB1 of blockB.

4. Exception handling of power failure.

The high-temperature block screening method, the dual-block asynchronous recording method, and the synchronization processing after the block is full used in this application are all to ensure that important information can be accurately recorded and read; in the event of data loss on either side, valid information can be extracted from the other block, and even in various abnormal situations such as power failure, the NAND information can be repaired in time to the greatest extent, ensuring that the NAND system will not be paralyzed due to information recording errors. From the block screening stage to the information recording process, the robustness of the block and the accuracy of the record are enhanced to the maximum extent. Not only does it solve the information recording errors caused by page synchronization errors, it also avoids problems such as information loss caused by power failure. In the actual development or testing process, if real-time recording, updating or recovery of information is required, the above method can be used as a reference, and the horizontal recording method between blocks and the vertical recording method within the block can be selected to ensure that there are four valid records at the same time, and correct data can be obtained from one party or multiple parties.

A data management device provided in an embodiment of the present application is introduced below. The data management device described below and the data management method described above can be referenced to each other.

Referring to FIG. 3 , a structural diagram of a data management device according to an exemplary embodiment is shown. As shown in FIG. 3 , the device includes:

A determination module 301, configured to determine a first storage block and a second storage block in a memory;

In this embodiment, two storage blocks with lower error rates are determined in the memory as recording targets. The data storage blocks, namely the first storage block blockA and the second storage block blockB, the memory in this embodiment may be specifically NAND. In some implementations, the first storage block and the second storage block are determined in the memory using a high temperature technology screening method.

As a feasible implementation method, the same target content is written to all storage blocks in the memory; the memory is heated, the contents of all storage blocks are read, and the error rate of each storage block is determined by comparing the read content with the target content; the two storage blocks with the lowest error rate are determined as the first storage block and the second storage block.

As another feasible implementation, the same target content is written to all storage blocks in the memory; the content of all storage blocks is read, and a first error rate of each storage block is determined by comparing the read content with the target content; a heating operation is performed on the memory, the content of all storage blocks is read, and a second error rate of each storage block is determined by comparing the read content with the target content; and the two storage blocks with the smallest difference between the first error rate and the second error rate are determined as the first storage block and the second storage block.

A division module 302, configured to divide the first storage block into a first part and a second part, and divide the second storage block into a third part and a fourth part according to a preset division method;

In a specific implementation, the first storage block and the second storage block are divided into two parts in the same way, that is, the first storage block is divided into the first part and the second part, and the second storage block is divided into the third part and the fourth part. The first part, the second part, the third part and the fourth part all contain multiple pages, the offset of the first part in the first storage block is the same as the offset of the third part in the second storage block, and the offset of the second part in the first storage block is the same as the offset of the fourth part in the second storage block, that is, the first part and the third part are prone to have UNC at the same time, and the second part and the fourth part are prone to have UNC at the same time. Some UNCs also appear.

The recording module 303 is used to record the target data to the first target page and the second target page in the first part, and the third target page and the fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.

The data management device provided in the embodiment of the present application adopts a dual-block asynchronous recording method, and UNC appears simultaneously in pages with the same sequence number in different blocks, that is, when UNC appears simultaneously in the first part of the first storage block and the third part of the second storage block, data can be recorded and read based on the fourth part of the second storage block. That is, the embodiment of the present application can ensure that important information can be accurately recorded and read, and can repair NAND information in a timely manner to the greatest extent, ensuring that the NAND system will not be paralyzed due to errors in information recording. It can be seen that the data management device provided in the embodiment of the present application improves the accuracy of data recording.

Based on the above embodiment, in some implementation modes, the determination module 301 is specifically used to: determine the first storage block and the second storage block in the memory by using a high temperature technology screening method.

Based on the above embodiment, in some implementation modes, the determination module 301 is specifically used to: write the same target content to all storage blocks in the memory; read the content of all storage blocks, The first error rate of each storage block is determined by comparing the read content with the target content; a heating operation is performed on the memory to read the contents of all storage blocks, and the second error rate of each storage block is determined by comparing the read content with the target content; and two storage blocks with the smallest difference between the first error rate and the second error rate are determined as the first storage block and the second storage block.

Based on the above embodiments, in some implementation schemes, the determination module 301 is specifically used to: write the same target content to all storage blocks in the memory; perform a heating operation on the memory, read the contents of all storage blocks, and determine the error rate of each storage block by comparing the read content with the target content; determine the two storage blocks with the lowest error rate as the first storage block and the second storage block.

Based on the above embodiments, in some implementations, the recording module 303 is specifically used to: record the target data to the first target page and the second target page in the first part according to the page order in the first part, and record the target data to the third target page and the fourth target page in the fourth part according to the page order in the fourth part; wherein the second target page is the page after the first target page, and the fourth target page is the page after the third target page.

Based on the above embodiments, in some implementations, the following further includes:

Based on the above embodiments, in some implementations, the target data is management information of the memory, and the management information includes any one or any one of bad block information, load balancing information, and garbage collection information. A combination of several items.

It is understandable that the arrangement of pageA and pageB of different MLC NAND is not consistent, and the total number will also be different. When pageA in blockA or pageB in blockB is full, the other block is often not full. At this time, synchronization processing is required. For example, if blockA is full, it is necessary to perform an erase operation, read the last valid information of blockB, and update it to pageA0 and pageA1 of blockA. At this time, blockB is erased, and then the valid information of blockA is synchronized to pageB0 and pageB1 of blockB.

Regarding the device in the above embodiment, the specific manner in which each module performs operations has been described in detail in the embodiment of the method, and will not be elaborated here.

Based on the hardware implementation of the above program modules, and in order to implement the method of the embodiment of the present application, the embodiment of the present application further provides an electronic device. FIG4 is a structural diagram of an electronic device according to an exemplary embodiment. As shown in FIG4, the electronic device includes:

Communication interface 1, capable of exchanging information with other devices such as network devices;

The processor 2 is connected to the communication interface 1 to realize information exchange with other devices and is used to execute the data management method provided by one or more technical solutions when running the computer program. The computer program is stored in the memory 3.

Of course, in actual application, the various components in the electronic device are coupled together through the bus system 4. It can be understood that the bus system 4 is used to realize the connection and communication between these components. In addition to the data bus, the bus system 4 also includes a power bus, a control bus and a status signal bus. However, for the sake of clarity, various buses are marked as the bus system 4 in FIG. 4.

The memory 3 in the embodiment of the present application is used to store various types of data to support the operation of the electronic device. Examples of such data include: any computer program used to operate on the electronic device.

It can be understood that the memory 3 can be a volatile memory or a non-volatile memory, and can also include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a magnetic random access memory (FRAM), a flash memory, a magnetic surface memory, an optical disc, or a compact disc read-only memory (CD-ROM); the magnetic surface memory can be a disk memory or a tape memory. The volatile memory can be a random access memory (RAM), which is used as an external cache. By way of example but not limitation, many forms of RAM are available, such as static random access memory (SRAM), synchronous static random access memory (SSRAM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), double data rate synchronous dynamic random access memory (DDRSDRAM), enhanced synchronous dynamic random access memory (ESDRAM), synchronous link dynamic random access memory (SLDRAM), direct memory bus random access memory (DRRAM). The memory 3 described in the embodiments of the present application is intended to include but is not limited to these and any other suitable types of memory.

The method disclosed in the above-mentioned embodiment of the present application can be applied to processor 2, or implemented by processor 2. Processor 2 may be an integrated circuit chip with signal processing capabilities. In the implementation process, each step of the above-mentioned method can be completed by an integrated logic circuit of hardware in processor 2 or instructions in software form. The above-mentioned processor 2 can be a general-purpose processor, DSP, or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. Processor 2 can implement or execute the various methods, steps and logic block diagrams disclosed in the embodiments of the present application. A general-purpose processor can be a microprocessor or any conventional processor, etc. In combination with the method disclosed in the embodiments of the present application The steps of the method can be directly embodied as being executed by a hardware decoding processor, or by a combination of hardware and software modules in the decoding processor. The software module can be located in a non-volatile readable storage medium, which is located in the memory 3. The processor 2 reads the program in the memory 3 and completes the steps of the aforementioned method in combination with its hardware.

When the processor 2 executes the program, the corresponding processes in each method of the embodiment of the present application are implemented, which will not be described here for the sake of brevity.

In an exemplary embodiment, the present application also provides a storage medium, namely a computer storage medium, specifically a non-volatile readable storage medium, for example, a memory 3 storing a computer program, and the above-mentioned computer program can be executed by a processor 2 to complete the above-mentioned method steps. The non-volatile readable storage medium can be a memory such as FRAM, ROM, PROM, EPROM, EEPROM, Flash Memory, magnetic surface storage, optical disk, CD-ROM, etc.

A person skilled in the art can understand that all or part of the steps of implementing the above method embodiment can be completed by hardware related to program instructions, and the aforementioned program can be stored in a non-volatile readable storage medium. When the program is executed, it executes the steps of the above method embodiment; and the aforementioned non-volatile readable storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software function module and sold or used as an independent product, it can also be stored in a non-volatile readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application can be essentially or partly reflected in the form of a software product that contributes to the prior art. The computer software product is stored in a non-volatile readable storage medium, including a number of instructions to enable an electronic device (which can be a personal computer, server, network device, etc.) to execute all or part of the methods of each embodiment of the present application. The aforementioned non-volatile readable storage medium includes: various media that can store program codes, such as mobile storage devices, ROM, RAM, magnetic disks or optical disks.

The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

A data management method, comprising:

Determining a first storage block and a second storage block in a memory;

Dividing the first storage block into a first part and a second part, and dividing the second storage block into a third part and a fourth part according to a preset division method;

The target data is recorded to the first target page and the second target page in the first part, and the third target page and the fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.
The data management method according to claim 1, wherein determining the first storage block and the second storage block in the memory comprises:

A first memory block and a second memory block are determined in a memory using a high temperature technology screening method.
According to the data management method of claim 2, wherein the step of determining the first storage block and the second storage block in the memory by using the high temperature technology screening method comprises:

Writing the same target content to all storage blocks in the memory;

Reading the contents of all the storage blocks, and determining a first error rate of each storage block by comparing the read contents with the target contents;

Performing a heating operation on the memory, reading the contents of all the storage blocks, and determining a second error rate of each of the storage blocks by comparing the read contents with the target contents;

The two storage blocks having the smallest difference between the first error rate and the second error rate are determined as the first storage block and the second storage block.
According to the data management method of claim 2, wherein the step of determining the first storage block and the second storage block in the memory by using the high temperature technology screening method comprises:

Writing the same target content to all storage blocks in the memory;

Performing a heating operation on the memory, reading the contents of all the storage blocks, and determining the error rate of each storage block by comparing the read contents with the target contents;

The two storage blocks with the lowest error rates are determined as the first storage block and the second storage block.
The data management method according to claim 1, wherein the first part, the second part, the third part and the fourth part each include multiple pages, the offset of the first part in the first storage block is the same as the offset of the third part in the second storage block, The offset of the second part in the first storage block is the same as the offset of the fourth part in the second storage block.
According to the data management method of claim 1, wherein recording the target data to the first target page and the second target page in the first part and the third target page and the fourth target page in the fourth part comprises:

The target data is recorded to the first target page and the second target page in the first part according to the page order in the first part, and the target data is recorded to the third target page and the fourth target page in the fourth part according to the page order in the fourth part; wherein the second target page is the next page of the first target page, and the fourth target page is the next page of the third target page.
The data management method according to claim 6, wherein the step of recording the target data to the first target page and the second target page in the first part according to the page order in the first part, and recording the target data to the third target page and the fourth target page in the fourth part according to the page order in the fourth part, further comprises:

When a command to read the target data is received, the last piece of data in the first part is read.
The data management method according to claim 7, wherein after reading the last piece of data in the first part, the method further comprises:

If the last piece of data in the first part is read incorrectly, the second to last piece of data in the first part is read.
The data management method according to claim 8, wherein after reading the second to last piece of data in the first part, the method further comprises:

If both the last piece of data and the second to last piece of data in the first part are read incorrectly, the last piece of data in the fourth part is read.
The data management method according to claim 9, wherein after reading the last piece of data in the fourth part, the method further comprises:

If the last piece of data in the fourth part is read incorrectly, the second to last piece of data in the fourth part is read.
According to the data management method of claim 1, wherein the target data is management information of the memory, and the management information includes any one or a combination of any several of bad block information, load balancing information, and garbage collection information.
According to the data management method of claim 1, wherein after recording the target data to the first target page and the second target page in the first part and the third target page and the fourth target page in the fourth part, it further comprises:

When the first part is full, erasing all data in the first part;

Read the last piece of data in the fourth part, and record the last piece of data in the first part;

All data in the fourth part are erased, and the last piece of data in the first part is synchronized to the fourth part.
According to the data management method of claim 1, wherein after recording the target data to the first target page and the second target page in the first part and before recording the target data to the third target page and the fourth target page in the fourth part, the method further comprises:

If a power failure exception occurs in the second storage block, after the second storage block is powered on, the last piece of data in the first part is synchronized to the fourth part.
The data management method according to claim 1, wherein the memory is NAND.
According to the data management method of claim 1, wherein the step of dividing the first storage block into the first part and the second part and dividing the second storage block into the third part and the fourth part according to a preset division method comprises:

The first storage block is blockA, the second storage block is blockB, blockA is divided into a first part pageA and a second part pageB, and blockB is divided into a third part pageA and a fourth part pageB, wherein the first part pageA and the third part pageA are numbered from 0, the second part pageB and the fourth part pageB are also numbered from 0, the i-th page is respectively recorded as pageAi and pageBi, only pageA is written in the recording process in blockA, and only pageB is written in blockB.
According to the data management method of claim 15, the information recorded in pageA(x) of blockA is equal to the information recorded in pageA(x+1) of blockA, x is an even serial number, the information recorded in pageB(x) of blockB is equal to the information recorded in pageB(x+1) of blockB, and: the information recorded in pageAi of blockA is equal to the information recorded in pageBi of blockB.
The data management method according to claim 15, wherein the target data is recorded in the first target page and the second target page in the first part, the third target page and the After the fourth target page, it also includes:

When blockA is full, an erase operation is performed, and the last valid information of blockB is read and updated to pageA0 and pageA1 of blockA. At this time, blockB is erased, and then the valid information of blockA is synchronized to pageB0 and pageB1 of blockB.
A data management device, comprising:

A determination module, configured to determine a first storage block and a second storage block in a memory;

a partitioning module, configured to partition the first storage block into a first part and a second part, and partition the second storage block into a third part and a fourth part according to a preset partitioning method;

A recording module, used for recording target data to a first target page and a second target page in the first part, and a third target page and a fourth target page in the fourth part; wherein the offset of the first target page in the first part is the same as the offset of the third target page in the fourth part, and the offset of the second target page in the first part is the same as the offset of the fourth target page in the fourth part.
An electronic device, comprising:

Memory for storing computer programs;

A processor, configured to implement the steps of the data management method according to any one of claims 1 to 17 when executing the computer program.
A non-volatile readable storage medium, wherein a computer program is stored on the non-volatile readable storage medium, and when the computer program is executed by a processor, the steps of the data management method according to any one of claims 1 to 17 are implemented.