WO2024099369A1 - 晶圆承载装置及半导体工艺设备 - Google Patents

晶圆承载装置及半导体工艺设备 Download PDF

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Publication number
WO2024099369A1
WO2024099369A1 PCT/CN2023/130514 CN2023130514W WO2024099369A1 WO 2024099369 A1 WO2024099369 A1 WO 2024099369A1 CN 2023130514 W CN2023130514 W CN 2023130514W WO 2024099369 A1 WO2024099369 A1 WO 2024099369A1
Authority
WO
WIPO (PCT)
Prior art keywords
base
adapter
electrical connection
refrigerant
wafer carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2023/130514
Other languages
English (en)
French (fr)
Inventor
吴东煜
刘晓行
韦刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Naura Microelectronics Equipment Co Ltd
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to JP2025518516A priority Critical patent/JP2025532300A/ja
Priority to KR1020257006165A priority patent/KR20250041165A/ko
Publication of WO2024099369A1 publication Critical patent/WO2024099369A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present application belongs to the technical field of semiconductor process equipment design, and specifically relates to a wafer carrier and semiconductor process equipment.
  • the wafer carrier is an important component of semiconductor process equipment, which is used to support the wafer when the semiconductor process equipment is in process.
  • the base of the wafer carrier is provided with a refrigerant channel.
  • a refrigerant such as cooling water
  • the base also plays the function of receiving radio frequency current.
  • the feed part is plugged into the center of the base, and the modulated radio frequency current is finally input into the center position of the base through the feed part, thereby ensuring the quality of radio frequency introduction.
  • the wafer carrier device involved in the related art opens the refrigerant inlet and the refrigerant outlet at the edge of the base.
  • the wafer carrier device needs to have a consistent temperature in the circumferential direction when in use, and when the refrigerant enters the refrigerant channel from the refrigerant inlet, its own pressure will impact the inner wall of the refrigerant channel, thereby causing the heat transfer efficiency at the refrigerant inlet position to be significantly higher, thereby forming a local low temperature area. Since the refrigerant inlet is located on a circumference with a larger radial dimension, the heat of other areas on the same circumference cannot be transferred in time due to the long distance, and it is easier to form a larger temperature gradient, and ultimately the temperature consistency of the wafer carrier device in the circumferential direction cannot be met.
  • the present invention discloses a wafer carrying device to solve the problem of wafer carrying device in related technology. There is a problem of poor temperature uniformity in the circumferential direction.
  • the present invention provides the following technical solutions:
  • an embodiment of the present application discloses a wafer carrying device, comprising a base, a feeding portion and a first adapter, wherein:
  • the first adapter is provided with a center hole and an annular electrical connection surface, and the annular electrical connection surface is arranged around the center hole; the end of the feeding part is inserted into the center hole and electrically connected to the first adapter, and the base is electrically connected to the annular electrical connection surface.
  • an embodiment of the present application discloses a wafer carrying device, comprising a base, a first adapter located below the base, a refrigerant input pipe and a refrigerant output pipe, wherein:
  • the base is provided with a refrigerant channel, the refrigerant channel has a refrigerant inlet and a refrigerant outlet, the refrigerant inlet and the refrigerant outlet are arranged on the surface of the base facing the first adapter and are arranged near the center of the base;
  • the first adapter is provided with a first connecting channel and a second connecting channel, the first connecting channel is connected with the refrigerant inlet and the refrigerant input pipeline, and the second connecting channel is connected with the refrigerant outlet and the refrigerant output pipeline;
  • the port of the first connecting channel connected to the refrigerant input pipe is adjacent to the edge of the first adapter, and the port of the first connecting channel connected to the refrigerant inlet is adjacent to the center of the first adapter and opposite to the refrigerant inlet;
  • the port of the second connecting channel connected to the refrigerant output pipe is adjacent to the edge of the first adapter, and the port of the second connecting channel connected to the refrigerant outlet is adjacent to the center of the first adapter and opposite to the refrigerant outlet.
  • an embodiment of the present application discloses a semiconductor process equipment, including the wafer carrier device described above.
  • the wafer carrier device disclosed in the embodiment of the present application is a wafer carrier device related to the related art.
  • the structure of the device is improved, and the method of inputting radio frequency from the center of the base is changed, so that radio frequency can be input into the base from the annular electrical connection surface surrounding the center hole on the first adapter.
  • FIG1 is a schematic structural diagram of a wafer carrying device disclosed in an embodiment of the present application.
  • FIG2 is a schematic structural diagram of a first adapter disclosed in an embodiment of the present application.
  • FIG3 is a top view of FIG2 ;
  • FIG4 is a bottom view of FIG2 ;
  • Fig. 5 is a cross-sectional view taken along the line A-A of Fig. 2;
  • FIG6 is a schematic diagram of a portion of the structure in FIG1 ;
  • FIG7 is a schematic structural diagram of a second adapter disclosed in an embodiment of the present application.
  • Fig. 8 is a cross-sectional view taken along the line B-B of Fig. 7 .
  • references numerals 100-base, 110-refrigerant channel, 111-refrigerant inlet, 112-refrigerant outlet, 210-Feeder, 300-first adapter, 310-adapter base, 311-center hole, 312-annular electrical connection surface, 313- first connecting channel, 314-second connecting channel, 315-overlapping step surface, 320-annular protrusion, 410-refrigerant input pipeline, 420-refrigerant output pipeline, 510-power-carrying layer, 511-electric heating layer, 512-electric adsorption layer, 520-power supply cable, 600-second adapter, 610-first electrical connection part, 620-second electrical connection part, 630-insulating plate, 640-line, 700-insulating ring, 710-annular sinker.
  • the present application discloses a wafer carrying device, which includes a base 100 , a feeding unit 210 , and a first adapter 300 .
  • the base 100 is a component in the wafer carrier that assists in temperature control by cooling.
  • the base 100 is provided with a refrigerant channel 110, and the refrigerant channel 110 is used for passing a refrigerant (such as cooling water, cooling oil, etc.).
  • the refrigerant will exchange heat with the base 100 during the process of flowing through the refrigerant channel 110, thereby adjusting the uniformity of the temperature of the base 100.
  • the refrigerant channel 110 has a refrigerant inlet 111 and a refrigerant outlet 112. In the specific working process, the refrigerant enters the refrigerant channel 110 from the refrigerant inlet 111, and after flowing through other areas of the refrigerant channel 110, it flows out from the refrigerant outlet 112.
  • the base 100 also plays a role in receiving radio frequency current to play a preset function.
  • the first adapter 300 is a conductive member, which is used at least for performing the feeding adapter function.
  • the first adapter 300 is provided with a central hole 311 and an annular electrical connection surface 312, and the annular electrical connection surface 312 is arranged around the central hole 311.
  • the end of the feeding part 210 is inserted into the central hole 311 and is electrically connected to the first adapter 300, thereby realizing the input of radio frequency.
  • the base 100 is electrically connected to the annular electrical connection surface 312 , so as to receive the radio frequency input by the feeding portion 210 , thereby completing the input of the radio frequency to the base 100 .
  • the central axis of the base 100 is relatively close to the central axis of the first adapter 300, and can even overlap.
  • the annular electrical connection surface 312 is disposed around the central axis of the first adapter 300, and thus the annular electrical connection surface 312 can be considered to be disposed around the central axis of the base 100.
  • the position of the base 100 electrically connected to the annular electrical connection surface 312 is not the center of the base 100.
  • the RF is input from the end of the feeding part 210 to the hole wall of the central hole 311 of the first adapter 300, and then transmitted from the hole wall of the central hole 311 to the annular electrical connection surface 312 of the first adapter 300, and finally input to the edge of the base 100 through the annular electrical connection surface 312.
  • the wafer carrier device disclosed in the embodiment of the present application inputs the RF from a non-central position of the base 100.
  • radio frequency is a high-frequency alternating current (sine wave), and there is a phase difference at different positions within a wavelength. Therefore, there is often a phase difference at different positions in the radio frequency loop, so there are currents and voltages of different sizes.
  • positions on the base 100 that are different distances from the radio frequency feeding part have different currents and voltages after the radio frequency is turned on, and therefore have different electric field strengths, and the ability to attract plasma in the process cavity of the semiconductor process equipment is also different, which leads to different plasma energies above the wafer support device, thereby affecting the etching uniformity.
  • the radio frequency frequencies commonly used in semiconductor process equipment are 12.65MHz or 2MHz, and the corresponding wavelengths are approximately 22m and 150m. Regardless of whether the radio frequency is input from the center of the base 100 or from the edge of the base 100, its propagation distance on the base 100 is approximately the length of the radius of the base 100.
  • the radius of the base 100 is usually 0.15m-0.17m. Taking the 13.56MHz radio frequency with a shorter wavelength as an example, the ratio of the radius of the base 100 to the wavelength is about 0.007. Therefore, the maximum electric field strength difference of the base 100 is within 1%. It can be concluded that although the radio frequency input point (feeding point) on the base 100 has changed, the impact on the plasma in the process cavity of the semiconductor process equipment can be ignored.
  • the wafer carrier disclosed in the embodiment of the present application is improved on the wafer carrier of the related art, and the radio frequency feeding part is transferred from the center of the base 100 to other parts of the base 100, and the impact on the process parameters of the semiconductor process equipment can be ignored.
  • the annular electrical connection surface 312 is disposed at the edge of the first adapter 300.
  • the edge of the base 100 is opposite to the annular electrical connection surface 312 and is electrically connected to the annular electrical connection surface 312.
  • the base 100 The RF feeding portion is at an edge away from the center of the base 100 . This structure can better avoid the influence of the RF feeding portion on the central area of the base 100 .
  • the wafer carrier disclosed in the embodiment of the present application improves the structure of the wafer carrier involved in the related art, changes the way of inputting radio frequency from the center of the base 100, and enables radio frequency to be input into the base 100 from the annular electrical connection surface 312 surrounding the center hole 311 on the first adapter 300.
  • the refrigerant inlet 111 and the refrigerant outlet 112 can be arranged near the center of the base 100, so as to alleviate the disadvantage that the refrigerant inlet 111 and the refrigerant outlet 112 in the related art cannot be arranged near the center of the base 100 because the center of the base 100 is connected to the feeding part 210, so that the temperature uniformity of the wafer carrier in the circumferential direction is improved.
  • the structure of the feeding part 210 can be various.
  • the feeding part 210 may include a feeding tube.
  • the end of the feeding tube is inserted into the center hole 311 and electrically connected to the first adapter 300.
  • the end of the feeding tube is electrically connected to the hole wall of the center hole 311 of the first adapter 300.
  • the feeding part 210 can also be a non-tubular structure, and the embodiment of the present application does not limit the specific structure of the feeding part 210.
  • the feeding part 210 is preferably made of a metal material, such as copper.
  • the wafer carrier device disclosed in the embodiment of the present application may also include a power-carrying layer 510 and a power supply cable 520.
  • the power-carrying layer 510 is arranged on the surface of the base 100 facing away from the first adapter 300, and the power supply cable 520 is inserted into the feeding tube.
  • the end of the power supply cable 520 extends out of the feeding tube and is electrically connected to the power-carrying layer 510.
  • the feeding tube can not only play the role of feeding, but also serve as a passage for the power supply cable 520 to facilitate the layout of the power supply cable 520.
  • the feeding tube can also protect the power supply cable 520 to prevent damage to the power supply cable 520.
  • the power supply cable 520 can be directly electrically connected to the power-carrying layer 510.
  • the power-on layer 510 is a layer structure that can perform a preset function after being powered on.
  • the power-on layer 510 may include at least one functional layer stacked on the base 100 .
  • the wafer carrier device disclosed in the embodiment of the present application may also include a second adapter 600, and the second adapter 600 includes a first electrical connection portion 610 facing the base 100 and a second electrical connection portion 620 facing away from the base 100.
  • the base 100 is provided with a third electrical connection portion electrically connected to the power-carrying layer 510.
  • the second electrical connection portion 620 is electrically connected to the power supply cable 520 via the center hole 311.
  • the first electrical connection portion 610 is electrically connected to the third electrical connection portion to electrically connect to the functional layer to achieve the purpose of supplying power to the functional layer. In this case, it is essentially that the power supply cable 520 is indirectly connected to the functional layer through the second adapter 600.
  • the second adapter 600 is essentially an intermediate electrical adapter, and the second adapter 600 can be pre-designed so that the first electrical connection portion 610 and the second electrical connection portion 620 are pre-set, and then serve as an intermediate electrical adapter, thereby facilitating the electrical connection between the power supply cable 520 and the functional layer.
  • the at least one functional layer described above may include at least one of an electric heating layer 511 and an electric adsorption layer 512.
  • the electric heating layer 511 heats the base 100 by heating the base 100 by powering on, so that the wafer support device can reach a preset temperature, thereby ensuring the temperature required by the wafer in the subsequent process.
  • the electric adsorption layer 512 is a structural layer that realizes electric adsorption after powering on, and can adsorb the wafer supported by the wafer support device, so that the wafer can be placed on the wafer support device more stably.
  • the at least one functional layer described above may include an electric heating layer 511 and an electric adsorption layer 512 sequentially stacked on the base 100.
  • the power supply cable 520 may include a first sub-cable and a second sub-cable, the first sub-cable being electrically connected to the electric heating layer 511, and the second sub-cable being electrically connected to the electric adsorption layer 512.
  • the electric heating layer 511 is powered by the first sub-cable, and the electric heating layer 511 can be heated to heat the wafer on the wafer carrier.
  • the electric adsorption layer 512 is powered by the second sub-cable, and the electric adsorption layer 512 can adsorb the wafer on the wafer carrier.
  • the surface of the power-carrying layer 510 facing away from the base 100 is the bearing surface capable of bearing the wafer.
  • the surface of the electric adsorption layer 512 facing away from the electric heating layer 511 is the bearing surface capable of bearing the wafer. Bearing surface.
  • the first sub-cable may be directly electrically connected to the electric heating layer 511
  • the second sub-cable may be directly electrically connected to the electric adsorption layer 512 .
  • the first sub-cable is electrically connected to the electric heating layer 511 through a portion of the second electrical connection portion 620 that is electrically connected in sequence, a portion of the first electrical connection portion 610 that passes through the base 100, and a corresponding third electrical connection portion.
  • the first sub-cable is directly electrically connected to a portion of the second electrical connection portion 620.
  • the second sub-cable is electrically connected to the electric adsorption layer 512 through another portion of the second electrical connection portion 620 that is electrically connected in sequence, another portion of the first electrical connection portion 610 that passes through the base 100 and the electric heating layer 511 in sequence, and a corresponding third electrical connection portion.
  • This method can facilitate the electrical connection of the first sub-cable and the second sub-cable with the electric heating layer 511 and the electric adsorption layer 512, respectively.
  • the first electrical connection part 610 and the second electrical connection part 620 may be electrical connection terminals, and the third electrical connection part may be a socket.
  • the second electrical connection part 620 extends into the central hole 311 to be electrically connected to the power supply cable 520.
  • the first electrical connection part 610 is plug-in electrically connected to the third electrical connection part.
  • the first electrical connection part 610 is a first electrical connection terminal
  • the second electrical connection part 620 is a second electrical connection terminal.
  • one of the first electrical connection part 610 and the third electrical connection part may include an electrical plug-in protrusion, and the other is provided with an electrical plug-in hole, and the electrical plug-in protrusion and the electrical plug-in hole are electrically connected by plugging.
  • one of the first electrical connection part 610 and the third electrical connection part may be a plug, and the other may be a socket. The plug and the socket are electrically connected by plugging.
  • This plug-in electrical connection structure has the advantage of convenient disassembly and assembly.
  • first electrical connection portion 610 may also be electrical connection portions of other structures, such as common electrical connection wire ends, which is not limited in the present embodiment.
  • the second adapter 600 disclosed in the embodiment of the present application may further include an insulating plate 630 and a circuit 640 embedded in the insulating plate 630.
  • the first electrical connection portion 610 is electrically connected to the corresponding second electrical connection portion 620 through the circuit 640 embedded in the insulating plate 630.
  • the insulating plate 630 serves as a mounting base for the first electrical connection portion 610 and the second electrical connection portion 620, which can undoubtedly realize the connection between the first electrical connection portion 610 and the second electrical connection portion 620.
  • 610 and the second electrical connection part 620 are electrically connected relatively stably, and the second adapter 600 can also be assembled through the assembly of the insulating plate 630, so as to facilitate the installation of the second adapter 600.
  • the circuit 640 can be a gold wire or a conductive glue, etc., and the specific structure of the circuit 640 is not limited in the embodiment of the present application.
  • the second adapter 600 may be a circuit board. Of course, it may also be other electrical adapters that can realize the preset functions. The present application does not limit the specific type of the second adapter 600.
  • the first adapter 300 may be provided with a groove, the surface of the notch of the first adapter 300 where the groove is provided is an annular electrical connection surface 312, the center hole 311 is provided on the bottom wall of the groove opposite to the notch, and the insulating plate 630 is provided in the groove.
  • the groove provided in the first adapter 300 can provide an installation space for the insulating plate 630, thereby realizing the installation of the second adapter 600.
  • this arrangement can enable the first adapter 300 and the second adapter 600 to be assembled more compactly, which is conducive to the miniaturized design of the entire wafer carrier.
  • the insulating plate 630 can be installed in the groove by bonding, clamping, etc.
  • the insulating plate 630 is positioned and matched with the groove.
  • the groove can not only accommodate the insulating plate 630, but also position the insulating plate 630, which is conducive to more stable installation of the second adapter 600.
  • the wafer carrier device disclosed in the embodiment of the present application further includes an insulating ring 700, which is, for example, disposed below the base 100 and surrounds the first adapter 300; an annular sink 710 is disposed at the inner peripheral edge of the end of the insulating ring 700 adjacent to the base 100, and an overlapping step surface 315 is provided at the edge of the first adapter 300, and the overlapping step surface 315 overlaps and cooperates with the annular sink 710.
  • the first adapter 300 is positioned in the annular sink 710, so as to achieve a relatively stable installation.
  • the end face of the insulating ring 700 adjacent to the base 100 and the annular electrical connection surface 312 are both supported and matched with the base 100.
  • the insulating ring 700 and the annular electrical connection surface 312 together support the base 100, which is conducive to improving the stability of the support for the base 100. It should be noted that, since the insulating ring 700 is made of insulating material, the support of the base 100 by the insulating ring 700 will not affect the input of radio frequency into the base 100 by the annular electrical connection surface 312 .
  • the first adapter 300 may include an adapter base 310 and an annular protrusion 320.
  • the annular protrusion 320 is arranged on the edge of the surface of the adapter base 310 facing the base 100.
  • the annular protrusion 320 is arranged around the central hole 311, and the central hole 311 is arranged in the adapter base 310.
  • the annular end surface of the annular protrusion 320 facing away from the adapter base 310 is an annular electrical connection surface 312.
  • the center hole 311 is opened on the adapter base 310 and is surrounded by the annular protrusion 320.
  • the annular end surface of the annular protrusion 320 facing away from the adapter base 310 protrudes from the adapter base 310, thereby preventing the adapter base 310 from contacting the base 100, thereby making it easier to form an annular electrical connection surface 312 electrically connected to the base 100, and also making it easier to ensure that other areas of the first adapter 300 except the annular electrical connection surface 312 are not electrically connected to the base 100, thereby determining a more accurate feeding position and better preventing other areas of the first adapter 300 except the annular electrical connection surface 312 from short-circuiting with the base 100.
  • the adapter base 310 and the annular protrusion 320 may form the groove described above.
  • the groove formed by the annular protrusion 320 and the adapter base 310 can provide installation space for the insulating plate 630, so that the space on the first adapter 300 is fully utilized.
  • the base 100 is provided with a refrigerant channel 110 having a refrigerant inlet 111 and a refrigerant outlet 112.
  • the refrigerant inlet 111 and the refrigerant outlet 112 are both provided on the surface of the base 100 facing the first adapter 300 and are disposed near the center of the base 100.
  • the wafer carrier device disclosed in the embodiment of the present application may also include a refrigerant input pipe 410 and a refrigerant output pipe 420.
  • the refrigerant input pipe 410 is connected to the refrigerant inlet 111
  • the refrigerant output pipe 420 is connected to the refrigerant outlet 112.
  • the refrigerant is input from the refrigerant input pipe 410 to the refrigerant inlet 111, and then enters the refrigerant channel 110. After flowing through the refrigerant channel 110, it flows out from the refrigerant outlet 112 to the refrigerant output pipe 420, and finally flows away.
  • the refrigerant input pipe 410 is connected to the refrigerant inlet 111, and the refrigerant output pipe 420 is connected to the refrigerant outlet 112.
  • the refrigerant input pipe 410 can be directly connected to the refrigerant inlet 111, and the refrigerant output pipe 420 can be directly connected to the refrigerant outlet 112.
  • the first adapter 300 and/or the second adapter 600 can be provided with avoidance holes for the refrigerant input pipe 410 and the refrigerant output pipe 420 to pass through, so as not to affect the direct connection between the refrigerant input pipe 410 and the refrigerant inlet 111 and the refrigerant output pipe 420 and the refrigerant outlet 112.
  • the first adapter 300 may be provided with a first connecting channel 313 and a second connecting channel 314, the first connecting channel 313 connecting the refrigerant inlet 111 and the refrigerant input pipe 410, the second connecting channel 314 connecting the refrigerant outlet 112 and the refrigerant output pipe 420, the port of the first connecting channel 313 connected to the refrigerant input pipe 410 is adjacent to the edge of the first adapter 300, the port of the first connecting channel 313 connected to the refrigerant inlet 111 is adjacent to the center hole 311; the port of the second connecting channel 314 connected to the refrigerant output pipe 420 is adjacent to the edge of the first adapter 300; the port of the second connecting channel 314 connected to the refrigerant outlet 112 is adjacent to the center hole 311.
  • the connection position of the refrigerant input pipe 410 and the refrigerant output pipe 420 can be made away from the center of the base 100, thereby avoiding the problem of space limitation caused by being too close to the feeding part 210. Since the refrigerant output pipe 420 and the refrigerant input pipe 410 are adjacent to the edge of the first adapter 300, there is a larger space, which makes it convenient for the operator to perform the connection operation.
  • the port of the first connecting channel 313 connected to the refrigerant input pipe 410, and the port of the second connecting channel 314 connected to the refrigerant output pipe 420 are both opened on the surface of the first adapter 300 facing away from the base 100; the port of the first connecting channel 313 connected to the refrigerant inlet 111, and the port of the second connecting channel 314 connected to the refrigerant outlet 112 are both opened on the surface of the first adapter 300 facing the base 100.
  • This structure enables the refrigerant input pipe 410 and the refrigerant output pipe 420 to be arranged below the first adapter 300, and the first adapter 300 is arranged Being arranged below the base 100 , it is easier to reasonably arrange these components in the space below the base 100 , and at the same time, the existing space below the base 100 can be fully utilized, which is beneficial to the miniaturization of the structure of the entire wafer support device.
  • the embodiment of the present application discloses another wafer carrying device, which includes a base 100 , a first adapter 300 , a refrigerant input pipe 410 and a refrigerant output pipe 420 .
  • the base 100 is provided with a coolant channel 110 .
  • the coolant channel 110 has a coolant inlet 111 and a coolant outlet 112 .
  • the coolant inlet 111 and the coolant outlet 112 are disposed on a surface of the base 100 facing the first adapter 300 and are disposed adjacent to the center of the base 100 .
  • the first adapter 300 is located below the base 100 and is provided with a first connecting channel 313 and a second connecting channel 314 .
  • the first connecting channel 313 connects the refrigerant inlet 111 and the refrigerant input pipe 410
  • the second connecting channel 314 connects the refrigerant outlet 112 and the refrigerant output pipe 420 .
  • the port of the first connecting channel 313 connected to the refrigerant input pipe 410 is adjacent to the edge of the first adapter 300, and the port of the first connecting channel 313 connected to the refrigerant inlet 111 is adjacent to the center of the first adapter 300 and opposite to the refrigerant inlet 111; the port of the second connecting channel 314 connected to the refrigerant output pipe 420 is adjacent to the edge of the first adapter 300, and the port of the second connecting channel 314 connected to the refrigerant outlet 112 is adjacent to the center of the first adapter 300 and opposite to the refrigerant outlet 112.
  • the port of the first connecting channel 313 connected to the refrigerant input pipe 410 and the port of the second connecting channel 314 connected to the refrigerant output pipe 420 are both opened on the surface of the first adapter 300 facing away from the cooling base 100 .
  • the first adapter 300 is provided with a center hole 311 and an annular electrical connection surface 312, and the annular electrical connection surface 312 is arranged around the center hole 311;
  • the wafer supporting device may also include a feeding part 210; the end of the feeding part 210 is inserted into the center hole 311 and is electrically connected to the first adapter 300, and the base 100 is electrically connected to the annular electrical connection surface 312.
  • the embodiment of the present application further discloses a semiconductor process equipment, and the disclosed semiconductor process equipment includes the wafer carrier device described in the above embodiment.

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Abstract

本申请公开一种晶圆承载装置，所公开的晶圆承载装置包括基座、馈电部和第一转接件，其中：第一转接件位于基座下方，第一转接件设有中心孔和环状电连接面，环状电连接面环绕中心孔设置；馈电部的端部插入中心孔，且与第一转接件电连接，基座与环状电连接面电连接。本申请还公开一种半导体工艺设备。上述方案能解决相关技术中涉及的晶圆承载装置存在圆周方向的温度均匀性较差的问题。

Description

晶圆承载装置及半导体工艺设备 技术领域
本申请属于半导体工艺设备设计技术领域，具体涉及一种晶圆承载装置及半导体工艺设备。
背景技术
晶圆承载装置是半导体工艺设备中较为重要的组成部分，用以在半导体工艺设备进行工艺时支撑晶圆。晶圆承载装置的基座设有冷媒通道。在具体的工作过程中，冷媒通道内通有冷媒(例如冷却水)以调节晶圆承载装置的温度及其均匀性。
但是，基座还发挥接收射频电流的功能。相关技术涉及的晶圆承载装置中，馈电部插接在基座的中心，经过调制的射频电流通过馈电部最终输入到基座的中心位置，从而确保射频导入质量。在此种情况下，为了避让馈电部，相关技术涉及的晶圆承载装置将冷媒进口和冷媒出口开设在基座的边缘。我们知道，晶圆承载装置在使用时需要其圆周方向的温度一致，而冷媒从冷媒进口进入到冷媒通道内时其自身的压力会冲击冷媒通道的内壁，进而造成冷媒进口位置的传热效率显著较高，从而形成一个局部低温区域。由于冷媒进口位于较大的径向尺寸的圆周上，因此同一圆周上的其它区域的热量因为距离较远而无法及时传递，进而较容易形成一个较大的温度梯度，最终无法满足晶圆承载装置在圆周方向的温度一致性。
发明内容
本发明公开一种晶圆承载装置，以解决相关技术中涉及的晶圆承载装置 存在圆周方向的温度均匀性较差的问题。
为了解决上述技术问题，本发明提供如下技术方案：
第一方面，本申请实施例公开一种晶圆承载装置，包括基座、馈电部和第一转接件，其中：
所述第一转接件设有中心孔和环状电连接面，所述环状电连接面环绕所述中心孔设置；所述馈电部的端部插入所述中心孔，且与所述第一转接件电连接，所述基座与所述环状电连接面电连接。
第二方面，本申请实施例公开一种晶圆承载装置，包括基座、位于所述基座下方的第一转接件、冷媒输入管道和冷媒输出管道，其中：
所述基座设有冷媒通道，所述冷媒通道具有冷媒进口和冷媒出口，所述冷媒进口和冷媒出口设在所述基座的朝向所述第一转接件的表面，且邻近所述基座的中心设置；
所述第一转接件设有第一衔接通道和第二衔接通道，所述第一衔接通道连通所述冷媒进口和所述冷媒输入管道，所述第二衔接通道连通所述冷媒出口和所述冷媒输出管道；
所述第一衔接通道的与所述冷媒输入管道连接的端口邻近所述第一转接件的边缘，所述第一衔接通道的与所述冷媒进口连接的端口邻近所述第一转接件的中心，且与所述冷媒进口相对；
所述第二衔接通道的与所述冷媒输出管道连接的端口邻近所述第一转接件的边缘，所述第二衔接通道的与所述冷媒出口连接的端口邻近所述第一转接件的中心，且与所述冷媒出口相对。
第三方面，本申请实施例公开一种半导体工艺设备，包括上文所述的晶圆承载装置。
本发明采用的技术方案能够达到以下技术效果：
本申请实施例公开的晶圆承载装置通过对相关技术涉及的晶圆承载装 置的结构进行改进，改变了从基座的中心输入射频的方式，使得射频能够从第一转接件上环绕中心孔的环状电连接面输入到基座中。在此种情况下，相当于从基座的围绕其中心的部位输入射频，从而无需从基座的中心将射频输入到基座中，因此能够避免对基座的中心的占用，使得基座的中心具有空闲的区域，进而能够使得冷媒进口和冷媒出口能够邻近基座的中心设置，从而能够缓解相关技术中冷媒进口和冷媒出口由于冷却基座的中心连接馈电部，而无法邻近基座的中心设置所存在的弊端，使得晶圆承载装置在圆周方向的温度均匀性能够得以提升。
附图说明
图1为本申请实施例公开的晶圆承载装置的结构示意图；
图2为本申请实施例公开的第一转接件的结构示意图；
图3为图2的俯视图；
图4为图2的仰视图；
图5为图2的A-A向剖视图；
图6为图1中部分结构的示意图；
图7为本申请实施例公开的第二转接件的结构示意图；
图8为图7的B-B向剖视图。
附图标记说明：
100-基座、110-冷媒通道、111-冷媒进口、112-冷媒出口、
210-馈电部、
300-第一转接件、310-转接基部、311-中心孔、312-环状电连接面、313-
第一衔接通道、314-第二衔接通道、315-搭接台阶面、320-环状凸起、
410-冷媒输入管道、420-冷媒输出管道、
510-通电层、511-电加热层、512-电吸附层、520-供电线缆、
600-第二转接件、610-第一电连接部、620-第二电连接部、630-绝缘板、
640-线路、700-绝缘环、710-环状沉台。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
以下结合附图，详细说明本发明各个实施例公开的技术方案。
请参考图1至图8，本申请实施例公开一种晶圆承载装置。所公开的晶圆承载装置包括基座100、馈电部210和第一转接件300。
基座100是晶圆承载装置中通过冷却来辅助调温的部件。基座100设有冷媒通道110，冷媒通道110用于供冷媒(例如冷却水、冷却油等)通过，冷媒在流经冷媒通道110的过程中会与基座100发生换热，从而实现对基座100的温度的均匀性进行调节。冷媒通道110具有冷媒进口111和冷媒出口112。在具体的工作过程中，冷媒从冷媒进口111进入到冷媒通道110之内，在流经冷媒通道110的其它区域之后，从冷媒出口112流出。当然，如背景技术所述，基座100还发挥接收射频电流，以发挥预设功能的作用。
第一转接件300为导电件，至少用于发挥馈电转接功能。第一转接件300设有中心孔311和环状电连接面312，环状电连接面312环绕中心孔311设置，馈电部210的端部插入中心孔311，且与第一转接件300电连接，从而实现射频的输入。
基座100与环状电连接面312电连接，从而接收馈电部210输入的射频，从而完成射频向基座100的输入。
需要说明的是，基座100的中心轴线与第一转接件300的中心轴线较为靠近，甚至可以重合。环状电连接面312环绕中心孔311设置，则可以认为 环状电连接面312环绕第一转接件300的中心轴线设置，进而也可以认为环状电连接面312环绕基座100的中心轴线设置。当然，至少可以说明，基座100的与环状电连接面312电连接的位置并非基座100的中心。
在馈电传输的过程中，射频自馈电部210的端部输入至第一转接件300的中心孔311的孔壁，接着自中心孔311的孔壁向第一转接件300的环状电连接面312输送，最终通过环状电连接面312输入至基座100的边缘。也就是说，本申请实施例公开的晶圆承载装置从基座100的非中心位置输入射频。
需要说明的是，射频本质为一种高频交流电(正弦波)，在一个波长内的不同位置存在相位差，因此在射频回路的不同位置往往存在相位差，因此具有不同大小的电流和电压。在本申请实施例中，基座100上距射频馈入部位距离不同的位置在接通射频后具有不同的电流和电压，因此具有不同的电场强度，对半导体工艺设备的工艺内腔中的等离子体吸引能力也不同，进而导致晶圆支撑装置的上方的等离子体能量不同，进而影响刻蚀均匀性。在半导体工艺领域中，半导体工艺设备常用的射频频率为12.65MHz或2MHz，对应的波长约为22m和150m。不论射频从基座100的中心输入，还是从基座100的边缘输入，其在基座100上的传播距离都约为基座100的半径的长度。而基座100的半径通常为0.15m-0.17m，以波长较短的13.56MHz射频为例，基座100的半径与波长比约为0.007，因此基座100的最大电场强度差异在1％以内，进而能够得到虽然基座100上的射频输入点(馈入点)发生了变化，但是对半导体工艺设备的工艺内腔中的等离子体的影响可以忽略不计的结论。由此可知，本申请实施例公开的晶圆承载装置在相关技术的晶圆承载装置上进行改进，将射频馈入部位从基座100的中心转移到基座100的其它部位，对半导体工艺设备的工艺参数的影响可以忽略不计。
在较为优选的方案中，环状电连接面312设于第一转接件300边缘。基座100的边缘与环状电连接面312相对，且电连接。在此种情况下，基座100 的射频馈入部位为远离基座100的中心的边缘，此种结构能够更好地避免射频馈入部位对基座100的中心区域的影响。
本申请实施例公开的晶圆承载装置通过对相关技术涉及的晶圆承载装置的结构进行改进，改变了从基座100的中心输入射频的方式，使得射频能够从第一转接件300上环绕中心孔311的环状电连接面312输入到基座100中。在此种情况下，相当于从基座100的围绕其中心的部位输入射频，从而无需从基座100的中心将射频输入到基座100中，因此能够避免对基座100的中心的占用，使得基座100的中心具有空闲的区域，进而能够使得冷媒进口111和冷媒出口112能够邻近基座100的中心设置，从而能够缓解相关技术中冷媒进口111和冷媒出口112由于基座100的中心连接馈电部210，而无法邻近基座100的中心设置所存在的弊端，使得晶圆承载装置在圆周方向的温度均匀性得以提升。
在本申请实施例中，馈电部210的结构可以有多种。一种优选的方案中，馈电部210可以包括馈电管。可选地，该馈电管的端部插入中心孔311，且与第一转接件300电连接，具体地，馈电管的端部与第一转接件300的中心孔311的孔壁电连接。当然，馈电部210也可以为非管状结构，本申请实施例不限制馈电部210的具体结构。馈电部210优选为金属材料制成，例如铜。
在进一步的技术方案中，本申请实施例公开的晶圆承载装置还可以包括通电层510和供电线缆520，通电层510设于基座100的背向第一转接件300的表面，供电线缆520穿设在馈电管中，供电线缆520的端部伸出馈电管之外，且与通电层510电连接。在此种情况下，馈电管不但能够发挥馈电的作用，还能够作为供电线缆520的穿入通道，方便供电线缆520的布设，当然，馈电管还能够对供电线缆520实施防护，避免供电线缆520发生损坏。一种可选的方案中，供电线缆520可以直接与通电层510电连接。
在本申请实施例中，通电层510为通电后能够发挥预设功能的层结构。 具体的，通电层510可以包括叠置于基座100上的至少一个功能层。
本申请实施例公开的晶圆承载装置还可以包括第二转接件600，第二转接件600包括朝向基座100的第一电连接部610和背向基座100的第二电连接部620。基座100设有与通电层510电连接的第三电连接部。第二电连接部620经由中心孔311与供电线缆520电连接。第一电连接部610与第三电连接部电连接，以与功能层电连接，达到为功能层供电的目的。在此种情况下，实质上是供电线缆520通过第二转接件600实现与功能层的间接供电连接。第二转接件600实质为中间电转接件，第二转接件600可以预先设计，进而使得第一电连接部610和第二电连接部620预先设置，进而作为中间电转接件，进而方便供电线缆520与功能层之间的电连接。
上文所述的至少一个功能层可以包括电加热层511和电吸附层512中的至少一者。电加热层511通过通电发热的方式实现对基座100进行加热，从而实现晶圆支撑装置能够达到预设的温度，进而能够保证在后续工艺时晶圆所需的温度。电吸附层512为通电后实现电吸附的结构层，能够对晶圆支撑装置所支撑的晶圆实施吸附，从而使得晶圆能够较为稳定地放置在晶圆支撑装置上。
一种可选的方案中，上文所述的至少一个功能层可以包括依次叠置于基座100上的电加热层511和电吸附层512。供电线缆520可以包括第一子线缆和第二子线缆，第一子线缆与电加热层511电连接，第二子线缆与电吸附层512电连接。电加热层511由第一子线缆供电，电加热层511能够实施加热，从而加热晶圆承载装置上的晶圆。电吸附层512由第二子线缆供电，电吸附层512能够对晶圆承载装置上的晶圆实施吸附。
需要说明的是，在包含有通电层510的情况下，通电层510背向基座100的表面为能够承载晶圆的承载面。当然，在包含有电加热层511和电吸附层512的情况下，电吸附层512的背向电加热层511的表面为能够承载晶圆的 承载面。
具体的，第一子线缆可以直接与电加热层511电连接，第二子线缆可以直接与电吸附层512电连接。
在较为优选的方案中，第一子线缆通过依次电连接的一部分第二电连接部620、一部分穿过基座100的第一电连接部610以及相应的第三电连接部，与电加热层511电连接。具体的，第一子线缆与一部分第二电连接部620直接电连接。第二子线缆通过依次电连接的另一部分第二电连接部620、另一部分依次穿过基座100和电加热层511的第一电连接部610，以及相应的第三电连接部，与电吸附层512电连接。此种方式能够方便实现第一子线缆和第二子线缆分别与电加热层511和电吸附层512的电连接。
在本申请实施例中，第一电连接部610和第二电连接部620可以为电连接端子，第三电连接部可以为插座。第二电连接部620伸至中心孔311中以与供电线缆520电连接。第一电连接部610与第三电连接部插接电连接。
具体的，第一电连接部610为第一电连接端子，第二电连接部620为第二电连接端子。可选的方案中，第一电连接部610和第三电连接部中的一者可以包括电插接凸起，另一者设有电插接孔，电插接凸起与电插接孔之间通过插接实现电连接。具体的，第一电连接部610和第三电连接部中的一者可以为插头，另一者可以为插座。插头与插座通过插接配合实现电连接。此种插接的电连接结构具有方便拆装的优势。
当然，第一电连接部610、第二电连接部620和第三电连接部还可以为其它结构的电连接部，例如普通电连接线头。本申请实施例不作限制。
本申请实施例公开的第二转接件600还可以包括绝缘板630以埋设在绝缘板630之内的线路640，第一电连接部610通过埋设在绝缘板630内的线路640实现与相应的第二电连接部620之间的电连接。绝缘板630作为第一电连接部610和第二电连接部620的安装基座，无疑能够实现第一电连接部 610和第二电连接部620较为稳定地电连接，同时也能够使得第二转接件600通过绝缘板630的装配而实现装配，达到方便安装第二转接件600的目的。线路640可以是金线，也可以是导电胶等，本申请实施例不限制线路640的具体结构。
本申请实施例公开的晶圆承载装置中，第二转接件600可以为电路板。当然，还可以是其它能实现预设功能的电转接件，本申请不限制第二转接件600的具体种类。
在较为优选的方案中，第一转接件300可以设有凹槽，第一转接件300的开设凹槽的槽口的表面为环状电连接面312，中心孔311设于凹槽的与槽口相对的底壁上，绝缘板630设于凹槽之内。在此种情况下，第一转接件300开设的凹槽能够为绝缘板630提供安装空间，进而实现第二转接件600的安装。当然，此种设置方式能够使得第一转接件300与第二转接件600实现较为紧凑的装配，有利于整个晶圆承载装置的小型化设计。具体的，绝缘板630可以通过粘接、卡接等方式实现在凹槽内的安装。
在进一步的技术方案中，绝缘板630与凹槽定位配合，在此种情况下，凹槽不但能够容纳绝缘板630，还能够定位绝缘板630，进而有利于第二转接件600实现更稳定地安装。
本申请实施例公开的晶圆承载装置还包括绝缘环700，绝缘环700例如设置于基座100下方，且环绕于第一转接件300的周围；绝缘环700的邻近基座100的端部的内周边缘设有环状沉台710，第一转接件300的边缘开设有搭接台阶面315，搭接台阶面315与环状沉台710搭接配合。且第一转接件300定位于环状沉台710中，从而实现较为稳定地安装。
在进一步的技术方案中，绝缘环700的邻近基座100的端部的端面与环状电连接面312均与基座100支撑配合，在此种情况下，绝缘环700和环状电连接面312一起实现对基座100的支撑，有利于提高对基座100支撑的稳 定性。需要说明的是，由于绝缘环700为绝缘材质，因此绝缘环700对基座100的支撑不会影响环状电连接面312向基座100内输入射频。
请再次参考图1至图4，一种可选的方案中，第一转接件300可以包括转接基部310和环状凸起320，环状凸起320设于转接基部310的朝向基座100的表面的边缘。环状凸起320围绕中心孔311设置，中心孔311设于转接基部310，环状凸起320的背向转接基部310的环状端面为环状电连接面312。在此种结构中，中心孔311开设在转接基部310上，并被环状凸起320围绕，环状凸起320的背向转接基部310的环状端面凸出于转接基部310，因此能够避免转接基部310与基座100接触，进而较容易形成与基座100电连接的环状电连接面312，也比较容易确保第一转接件300的除环状电连接面312之外的其它区域不与基座100电连接，进而确定较为准确的馈电位置的同时，还能够较好地避免第一转接件300的除环状电连接面312之外的其它区域与基座100出现短接的情况发生。
在进一步优选的方案中，转接基部310与环状凸起320可以围成上文所述的凹槽。在此种情况下，环状凸起320与转接基部310形成的凹槽，能够为绝缘板630提供安装空间，从而使得第一转接件300上的空间得到充分的利用。
如上文所述，基座100设有冷媒通道110，冷媒通道110具有冷媒进口111和冷媒出口112。具体的，冷媒进口111和冷媒出口112均设在基座100的朝向第一转接件300的表面，且邻近基座100的中心设置。
本申请实施例公开的晶圆承载装置还可以包括冷媒输入管道410和冷媒输出管道420。冷媒输入管道410与冷媒进口111连通，冷媒输出管道420与冷媒出口112连通。在具体的工作过程中，冷媒从冷媒输入管道410输入到冷媒进口111，进而进入冷媒通道110，在流经冷媒通道110之后从冷媒出口112流出至冷媒输出管道420，最终流走。
冷媒输入管道410与冷媒进口111连通，冷媒输出管道420与冷媒出口112连通。具体的，冷媒输入管道410可以与冷媒进口111直接连通，冷媒输出管道420与冷媒出口112直接连通。当然，第一转接件300和/或第二转接件600可以开设有供冷媒输入管道410和冷媒输出管道420穿过的避让孔，从而不影响冷媒输入管道410与冷媒进口111以及冷媒输出管道420与冷媒出口112之间的直接连通。
在进一步优选的方案中，第一转接件300可以开设有第一衔接通道313和第二衔接通道314，第一衔接通道313连通冷媒进口111和冷媒输入管道410，第二衔接通道314连通冷媒出口112和冷媒输出管道420，第一衔接通道313的与冷媒输入管道410连接的端口邻近第一转接件300的边缘，第一衔接通道313的与冷媒进口111连接的端口邻近中心孔311；第二衔接通道314的与冷媒输出管道420连接的端口邻近第一转接件300的边缘；第二衔接通道314的与冷媒出口112连接的端口邻近中心孔311。在此种情况下，通过第一衔接通道313和第二衔接通道314的过渡衔接，能保证冷媒输入管道410与冷媒进口111连通以及冷媒输出管道420与冷媒出口112连通的情况下，还能够使得冷媒输入管道410和冷媒输出管道420的连接位置远离基座100的中心，从而能够避免与馈电部210距离过近而导致空间局限的问题，由于冷媒输出管道420和冷媒输入管道410邻近第一转接件300的边缘，因此具有较大的空间，进而方便操作人员进行连接操作。
在进一步的技术方案中，第一衔接通道313的与冷媒输入管道410连接的端口，以及，第二衔接通道314的与冷媒输出管道420连接的端口均开设在第一转接件300的背向基座100的表面；第一衔接通道313的与冷媒进口111连接的端口，以及第二衔接通道314的与冷媒出口112连接的端口均开设在第一转接件300朝向基座100的表面。此种结构能够使得冷媒输入管道410和冷媒输出管道420布设在第一转接件300的下方，第一转接件300布 设在基座100的下方，从而较容易实现这些构件在基座100的下方的空间中进行合理布设，同时也能够充分利用基座100下方的既有空间，有利于整个晶圆支撑装置的结构小型化。
本申请实施例公开另一种晶圆承载装置，所公开的晶圆承载装置包括基座100、第一转接件300、冷媒输入管道410和冷媒输出管道420。
基座100设有冷媒通道110，冷媒通道110具有冷媒进口111和冷媒出口112，冷媒进口111和冷媒出口112设在基座100的朝向第一转接件300的表面，且邻近基座100的中心设置。
第一转接件300位于基座100下方，且设有第一衔接通道313第二衔接通道314，第一衔接通道313连通冷媒进口111和冷媒输入管道410，第二衔接通道314连通冷媒出口112和冷媒输出管道420。
第一衔接通道313的与冷媒输入管道410连接的端口邻近第一转接件300的边缘，第一衔接通道313的与冷媒进口111连接的端口邻近第一转接件300的中心，且与冷媒进口111相对；第二衔接通道314的与冷媒输出管道420连接的端口邻近第一转接件300的边缘，第二衔接通道314的与冷媒出口112连接的端口邻近第一转接件300的中心，且与冷媒出口112相对。
在一种可选的方案中，第一衔接通道313的与冷媒输入管道410连接的端口，以及，第二衔接通道314的与冷媒输出管道420连接的端口均开设在第一转接件300的背向冷却基座100的表面。
在另一种可选的方案中，第一转接件300设有中心孔311和环状电连接面312，环状电连接面312环绕中心孔311设置；晶圆承载装置还可以包括馈电部210；馈电部210的端部插入中心孔311，且与第一转接件300电连接，基座100与环状电连接面312电连接。
需要说明的是，本申请公开的另一种晶圆承载装置包含的构件已在上文实施例中进行了相应的解释说明，相应部分可参考上文实施例中的内容即可， 当然，相应结构或部件产生的有益效果也可参考上文实施例中的内容即可，考虑到行文简洁，在此则不再赘述。
基于本申请实施例公开的晶圆承载装置，本申请实施例进一步公开一种半导体工艺设备，所公开的半导体工艺设备包括上文实施例所述的晶圆承载装置。
本发明上文实施例中重点描述的是各个实施例的不同，各个实施例的不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
上面结合附图对本发明的实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可做出很多形式，均属于本发明的保护之内。

Claims (14)

  1. 一种晶圆承载装置，其特征在于，包括基座、馈电部和第一转接件，其中：
    所述第一转接件位于所述基座下方，所述第一转接件设有中心孔和环状电连接面，所述环状电连接面环绕所述中心孔设置；所述馈电部的端部插入所述中心孔，且与所述第一转接件电连接，所述基座与所述环状电连接面电连接。
  2. 根据权利要求1所述的晶圆承载装置，其特征在于，所述馈电部包括馈电管，所述晶圆承载装置还包括通电层和供电线缆，所述通电层设于所述基座的背向所述第一转接件的表面，所述供电线缆穿设在所述馈电管中，所述供电线缆的端部伸出所述馈电管之外，且与所述通电层电连接。
  3. 根据权利要求2所述的晶圆承载装置，其特征在于，所述晶圆承载装置还包括第二转接件，所述第二转接件包括朝向所述基座的第一电连接部和背向所述基座的第二电连接部，所述基座设有与所述通电层电连接的第三电连接部，所述第二电连接部经由所述中心孔与所述供电线缆电连接，所述第一电连接部与所述第三电连接部电连接。
  4. 根据权利要求3所述的晶圆承载装置，其特征在于，所述第二电连接部为电连接端子，所述第一电连接部和所述第三电连接部中的一者为电连接端子，另一者为插座。
  5. 根据权利要求3所述的晶圆承载装置，其特征在于，所述通电层包括叠置于所述基座上的至少一个功能层，所述至少一个功能层包括依次叠置于所述基座上的电加热层和电吸附层，所述供电线缆包括第一子线缆和第二 子线缆，
    所述第一子线缆通过依次电连接的一部分所述第二电连接部、一部分穿过所述基座的所述第一电连接部以及相应的所述第三电连接部，与所述电加热层电连接；
    所述第二子线缆通过依次电连接的另一部分所述第二电连接部、另一部分依次穿过所述基座和所述电加热层的所述第一电连接部，以及相应的所述第三电连接部，与所述电吸附层电连接。
  6. 根据权利要求3所述的晶圆承载装置，其特征在于，所述第二转接件还包括绝缘板及埋设于所述绝缘板之内的线路，所述第一电连接部通过所述线路与所述第二电连接部电连接。
  7. 根据权利要求6所述的晶圆承载装置，其特征在于，所述第一转接件设有凹槽，所述第一转接件的开设所述凹槽的槽口的表面为所述环状电连接面；所述中心孔设于所述凹槽的与所述槽口相对的底壁上，所述绝缘板设于所述凹槽之内。
  8. 根据权利要求1所述的晶圆承载装置，其特征在于，所述晶圆承载装置还包括绝缘环，所述绝缘环环绕于所述第一转接件的周围；所述绝缘环的邻近所述基座的端部的内周边缘设有环状沉台，所述第一转接件的边缘开设有搭接台阶面，所述搭接台阶面和所述环状沉台搭接配合，且所述绝缘环的邻近所述基座的端部的端面与所述环状电连接面均与所述基座支撑配合。
  9. 根据权利要求1所述的晶圆承载装置，其特征在于，所述第一转接件包括转接基部和环状凸起，所述环状凸起设于所述转接基部的朝向所述基座的表面的边缘，所述中心孔设于所述转接基部，所述环状凸起围绕所述中心孔设置，所述环状凸起的背向所述转接基部的环状端面为所述环状电连接 面。
  10. 根据权利要求1至9中任一项所述的晶圆承载装置，其特征在于，所述基座设有冷媒通道，所述冷媒通道具有冷媒进口和冷媒出口，所述冷媒进口和所述冷媒出口设在所述基座的朝向所述第一转接件的表面，且邻近所述基座的中心设置；所述晶圆承载装置还包括冷媒输入管道和冷媒输出管道；
    所述冷媒输入管道和所述冷媒进口连通，所述冷媒输出管道与所述冷媒出口连通。
  11. 一种晶圆承载装置，其特征在于，包括基座、位于所述基座下方的第一转接件、冷媒输入管道和冷媒输出管道，其中：
    所述基座设有冷媒通道，所述冷媒通道具有冷媒进口和冷媒出口，所述冷媒进口和冷媒出口设在所述基座的朝向所述第一转接件的表面，且邻近所述基座的中心设置；
    所述第一转接件设有第一衔接通道和第二衔接通道，所述第一衔接通道连通所述冷媒进口和所述冷媒输入管道，所述第二衔接通道连通所述冷媒出口和所述冷媒输出管道；
    所述第一衔接通道的与所述冷媒输入管道连接的端口邻近所述第一转接件的边缘，所述第一衔接通道的与所述冷媒进口连接的端口邻近所述第一转接件的中心，且与所述冷媒进口相对；
    所述第二衔接通道的与所述冷媒输出管道连接的端口邻近所述第一转接件的边缘，所述第二衔接通道的与所述冷媒出口连接的端口邻近所述第一转接件的中心，且与所述冷媒出口相对。
  12. 根据权利要求11所述的晶圆承载装置，其特征在于，所述第一衔接通道的与所述冷媒输入管道连接的端口，以及，所述第二衔接通道的与所 述冷媒输出管道连接的端口均开设在所述第一转接件的背向所述基座的表面。
  13. 根据权利要求11所述的晶圆承载装置，其特征在于，所述第一转接件设有中心孔和环状电连接面，所述环状电连接面环绕所述中心孔设置；所述晶圆承载装置还包括馈电部；
    所述馈电部的端部插入所述中心孔，且与所述第一转接件电连接，所述基座与所述环状电连接面电连接。
  14. 一种半导体工艺设备，其特征在于，包括权利要求1至10中任一项所述的晶圆承载装置，或，权利要求11至13中任一项所述的晶圆承载装置。
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