WO2024095780A1

WO2024095780A1 - Substrate processing system and substrate processing method

Info

Publication number: WO2024095780A1
Application number: PCT/JP2023/037811
Authority: WO
Inventors: 幹雄中島; 翔太梅▲崎▼; 貴大林田
Original assignee: 東京エレクトロン株式会社
Priority date: 2022-11-01
Filing date: 2023-10-19
Publication date: 2024-05-10
Also published as: TW202425116A

Abstract

A substrate processing system (S) according to one aspect of the present disclosure comprises a processing fluid supply device (70), a substrate processing device (1), a supply line, and a temperature measurement unit. The processing fluid supply device (70) supplies a processing fluid that has been adjusted to a given temperature. The substrate processing device (1) processes a substrate using the processing fluid supplied from the processing fluid supply device (70). The supply line is connected between the processing fluid supply device (70) and the substrate processing device (1). The temperature measurement unit measures, in the supply line, at least one among the temperature of the processing fluid and the temperature of the supply line.

Description

SUBSTRATE PROCESSING SYSTEM AND SUBSTRATE PROCESSING METHOD

The disclosed embodiments relate to a substrate processing system and a substrate processing method.

　Conventionally, there is known a substrate processing apparatus that forms a liquid film to prevent drying on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), and then brings the wafer on which the liquid film has been formed into contact with a processing fluid in a supercritical state to perform a drying process (see, for example, Patent Document 1).

Patent No. 7109328

This disclosure provides technology that allows stable processing of wafers with processing fluid.

A substrate processing system according to one aspect of the present disclosure includes a processing fluid supply device, a substrate processing device, a supply line, and a temperature measurement unit. The processing fluid supply device supplies a processing fluid adjusted to a given temperature. The substrate processing device processes a substrate with the processing fluid supplied from the processing fluid supply device. A supply line is connected between the processing fluid supply device and the substrate processing device. The temperature measurement unit measures at least one of the temperature of the processing fluid and the temperature of the supply line in the supply line.

According to the present disclosure, wafers can be stably processed with processing fluid.

FIG. 1 is a diagram showing an example of the configuration of a substrate processing apparatus according to an embodiment. FIG. 2 is a diagram illustrating an example of the configuration of a liquid processing unit according to the embodiment. FIG. 3 is a schematic perspective view illustrating a configuration example of the drying unit according to the embodiment. FIG. 4 is a diagram showing an example of the overall system configuration of the substrate processing system according to the embodiment. FIG. 5 is a diagram illustrating an example of a piping configuration of the substrate processing system according to the embodiment. FIG. 6 is a diagram showing an example of a piping configuration of a substrate processing system according to a first modified example of the embodiment. FIG. 7 is a diagram showing an example of the operation of the substrate processing system according to the first modification of the embodiment. FIG. 8 is a diagram showing an example of the operation of the substrate processing system according to the first modification of the embodiment. FIG. 9 is a diagram showing an example of a piping configuration of a substrate processing system according to a second modification of the embodiment. FIG. 10 is a diagram showing an example of a piping configuration of a substrate processing system according to a third modification of the embodiment. FIG. 11 is a diagram showing an example of a piping configuration of a substrate processing system according to the fourth modification of the embodiment. FIG. 12 is a flowchart showing a procedure for substrate processing according to the embodiment. FIG. 13 is a flowchart showing a substrate processing procedure according to the first to fourth modified examples of the embodiment.

Below, embodiments of the substrate processing system and substrate processing method disclosed in the present application will be described in detail with reference to the attached drawings. Note that the present disclosure is not limited to the embodiments described below. It should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from reality. Furthermore, there may be parts in which the dimensional relationships and ratios differ between the drawings.

　Conventionally, substrate processing apparatuses are known that form a liquid film to prevent drying on the surface of a substrate such as a semiconductor wafer (hereinafter referred to as a wafer), and then bring the wafer with the liquid film formed thereon into contact with a processing fluid in a supercritical state to perform a drying process.

On the other hand, when drying multiple wafers consecutively in such substrate processing equipment, the first wafer may end up in a different processing state from the second and subsequent wafers after processing begins.

Therefore, there is a need to develop technology that can solve the above problems and stably process wafers with processing fluids.

<Configuration of the Substrate Processing Apparatus>
First, the configuration of a substrate processing apparatus 1 according to an embodiment will be described with reference to Fig. 1. Fig. 1 is a diagram showing an example of the configuration of a substrate processing apparatus 1 according to an embodiment. In the following, to clarify the positional relationship, an X-axis, a Y-axis, and a Z-axis that are orthogonal to each other are defined, and the positive direction of the Z-axis is defined as the vertical upward direction.

As shown in FIG. 1, the substrate processing apparatus 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are provided adjacent to each other.

The loading/unloading station 2 includes a carrier placement section 11 and a transport section 12. A plurality of carriers C, each of which holds a plurality of semiconductor wafers W (hereinafter referred to as "wafers W") in a horizontal position, are placed on the carrier placement section 11.

The transport section 12 is provided adjacent to the carrier placement section 11. Inside the transport section 12, a transport device 13 and a delivery section 14 are arranged.

The transfer device 13 is equipped with a wafer holding mechanism that holds the wafer W. The transfer device 13 is also capable of moving in the horizontal and vertical directions and rotating around a vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism.

The processing station 3 is located adjacent to the transport section 12. The processing station 3 includes a transport block 4 and a plurality of processing blocks 5.

The transport block 4 includes a transport area 15 and a transport device 16. The transport area 15 is, for example, a rectangular parallelepiped region extending along the arrangement direction (X-axis direction) of the loading/unloading stations 2 and the processing stations 3. The transport device 16 is disposed in the transport area 15.

The transfer device 16 is equipped with a wafer holding mechanism that holds the wafer W. The transfer device 16 is also capable of moving in the horizontal and vertical directions and rotating around a vertical axis, and uses the wafer holding mechanism to transfer the wafer W between the transfer section 14 and the multiple processing blocks 5.

The multiple processing blocks 5 are arranged adjacent to the transport area 15 on both sides of the transport area 15. Specifically, the multiple processing blocks 5 are arranged on one side (positive Y-axis direction) and the other side (negative Y-axis direction) of the transport area 15 in a direction (Y-axis direction) perpendicular to the arrangement direction (X-axis direction) of the loading/unloading stations 2 and processing stations 3.

Although not shown, the multiple processing blocks 5 are arranged in multiple stages (for example, three stages) along the vertical direction. The wafers W are transported between the processing blocks 5 arranged in each stage and the transfer section 14 by a single transport device 16 arranged in the transport block 4. The number of stages of the multiple processing blocks 5 is not limited to three.

Each processing block 5 includes a liquid processing unit 17, a drying unit 18, and a supply unit 19. The drying unit 18 is an example of a processing chamber.

The liquid processing unit 17 performs a cleaning process to clean the top surface of the wafer W, which is the pattern formation surface. The liquid processing unit 17 also performs a liquid film formation process to form a liquid film on the top surface of the wafer W after the cleaning process. The configuration of the liquid processing unit 17 will be described later.

The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film formation process. Specifically, the drying unit 18 dries the wafer W by bringing the wafer W after the liquid film formation process into contact with a processing fluid in a supercritical state (hereinafter also referred to as "supercritical fluid"). The configuration of the drying unit 18 will be described later.

The supply unit 19 supplies the processing fluid to the drying unit 18. Specifically, the supply unit 19 includes a group of supply devices including a flow meter, a flow regulator, a back pressure valve, a heater, etc., and a housing that houses the group of supply devices. In this embodiment, the supply unit 19 supplies _CO2 as the processing fluid to the drying unit 18. The configuration of the supply unit 19 will be described later.

A treatment fluid supplying device 70 (see FIG. 4) that supplies a treatment fluid is connected to the supply unit 19. In the embodiment, the treatment fluid supplying device 70 supplies _CO2 as the treatment fluid to the supply unit 19. The treatment fluid supplying device 70 will be described in detail later.

The liquid treatment unit 17, drying unit 18 and supply unit 19 are arranged along the transport area 15 (i.e., along the X-axis direction). Of the liquid treatment unit 17, drying unit 18 and supply unit 19, the liquid treatment unit 17 is disposed at a position closest to the loading/unloading station 2, and the supply unit 19 is disposed at a position farthest from the loading/unloading station 2.

In this way, each processing block 5 has one liquid processing unit 17, one drying unit 18, and one supply unit 19. In other words, the substrate processing apparatus 1 is provided with the same number of liquid processing units 17, drying units 18, and supply units 19.

The drying unit 18 also includes a processing area 18a where the supercritical drying process is performed, and a transfer area 18b where the wafer W is transferred between the transport block 4 and the processing area 18a. The processing area 18a and the transfer area 18b are aligned along the transport area 15.

Specifically, of the processing area 18a and the delivery area 18b, the delivery area 18b is arranged closer to the liquid processing unit 17 than the processing area 18a. That is, in each processing block 5, the liquid processing unit 17, the delivery area 18b, the processing area 18a, and the supply unit 19 are arranged in this order along the transport area 15.

As shown in FIG. 1, the substrate processing apparatus 1 includes a control device 6. The control device 6 is, for example, a computer, and includes a control unit 7 and a memory unit 8.

The control unit 7 includes a microcomputer having a CPU (Central Processing Unit), ROM (Read Only Memory), RAM (Random Access Memory), input/output ports, and various circuits. The CPU of the microcomputer reads and executes programs stored in the ROM to realize control of the conveying

devices

13, 16, the liquid treatment unit 17, the drying unit 18, the supply unit 19, and the like.

In addition, such a program may be stored in a computer-readable storage medium and installed from that storage medium into the storage unit 8 of the control device 6. Examples of computer-readable storage media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

The memory unit 8 is realized, for example, by a semiconductor memory element such as a RAM or a flash memory, or a storage device such as a hard disk or an optical disk.

In the substrate processing apparatus 1 configured as described above, first, the transfer device 13 in the loading/unloading station 2 removes the wafer W from the carrier C placed on the carrier placement section 11, and places the removed wafer W on the transfer section 14. The wafer W placed on the transfer section 14 is then removed from the transfer section 14 by the transfer device 16 in the processing station 3, and is transferred to the liquid processing unit 17.

The wafer W carried into the liquid treatment unit 17 is subjected to cleaning and liquid film forming processes by the liquid treatment unit 17, and then carried out of the liquid treatment unit 17 by the transfer device 16. The wafer W carried out of the liquid treatment unit 17 is carried into the drying unit 18 by the transfer device 16, and is subjected to drying processes by the drying unit 18.

The wafer W that has been dried by the drying unit 18 is removed from the drying unit 18 by the transport device 16 and placed in the transfer section 14. The processed wafer W placed in the transfer section 14 is then returned to the carrier C in the carrier placement section 11 by the transport device 13.

<Configuration of Liquid Processing Unit>
Next, the configuration of liquid processing unit 17 will be described with reference to Fig. 2. Fig. 2 is a diagram showing an example of the configuration of liquid processing unit 17. Liquid processing unit 17 is configured, for example, as a single-wafer cleaning device that cleans wafers W one by one by spin cleaning.

As shown in FIG. 2, the liquid processing unit 17 holds the wafer W almost horizontally using a wafer holding mechanism 25 disposed in an outer chamber 23 that forms the processing space, and rotates the wafer W by rotating the wafer holding mechanism 25 around a vertical axis.

The liquid processing unit 17 then inserts the nozzle arm 26 above the rotating wafer W and supplies chemical liquid and rinsing liquid in a predetermined order from the chemical nozzle 26a provided at the tip of the nozzle arm 26, thereby cleaning the top surface of the wafer W.

In addition, in the liquid processing unit 17, a chemical liquid supply path 25a is also formed inside the wafer holding mechanism 25. The underside of the wafer W is also cleaned by the chemical liquid and rinsing liquid supplied from the chemical liquid supply path 25a.

The cleaning process, for example, begins with the removal of particles and organic contaminants using an alkaline chemical called SC1 liquid (a mixture of ammonia and hydrogen peroxide). This is followed by a rinse wash using deionized water (DIW), which serves as a rinse liquid.

Next, the native oxide film is removed using an acidic chemical solution called diluted hydrofluoric acid (hereinafter referred to as "DHF"), and then the surface is rinsed with DIW.

The various chemical solutions described above are received in the outer chamber 23 or the inner cup 24 placed in the outer chamber 23, and are discharged from the drainage port 23a provided at the bottom of the outer chamber 23 and the drainage port 24a provided at the bottom of the inner cup 24. Furthermore, the atmosphere inside the outer chamber 23 is exhausted from the exhaust port 23b provided at the bottom of the outer chamber 23.

The liquid film formation process is performed after the rinsing process in the cleaning process. Specifically, the liquid processing unit 17 supplies liquid IPA (Isopropyl Alcohol) (hereinafter also referred to as "IPA liquid") to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25. This replaces the DIW remaining on both sides of the wafer W with IPA. The liquid processing unit 17 then gently stops the rotation of the wafer holding mechanism 25.

After completing the liquid film formation process, the wafer W, with the IPA liquid film formed on its upper surface, is transferred to the transfer device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25, and is removed from the liquid processing unit 17.

The liquid film formed on the wafer W prevents pattern collapse caused by evaporation (vaporization) of the liquid on the top surface of the wafer W during transport of the wafer W from the liquid processing unit 17 to the drying unit 18 and during loading into the drying unit 18.

<Configuration of Drying Unit>
Next, the configuration of the drying unit 18 will be described with reference to Fig. 3. Fig. 3 is a schematic perspective view showing an example of the configuration of the drying unit 18.

The drying unit 18 has a main body 31, a holding plate 32, and a lid member 33. The housing-shaped main body 31 has an opening 34 formed therein for loading and unloading the wafer W. The holding plate 32 holds the wafer W to be processed in a horizontal direction. The lid member 33 supports the holding plate 32 and seals the opening 34 when the wafer W is loaded into the main body 31.

The main body 31 is a container having a processing space formed therein capable of accommodating a wafer W having a diameter of, for example, 300 mm, and its wall is provided with

supply ports

35, 36 and discharge port 37. The

supply ports

35, 36 and the discharge port 37 are respectively connected to a supply flow path and a discharge flow path for circulating a supercritical fluid to the drying unit 18.

The supply port 35 is connected to the side of the housing-like main body 31 opposite the opening 34. The supply port 36 is connected to the bottom surface of the main body 31. The discharge port 37 is connected to the lower side of the opening 34. Note that although two

supply ports

35, 36 and one discharge port 37 are illustrated in FIG. 3, the number of

supply ports

35, 36 and discharge ports 37 is not particularly limited.

Furthermore, inside the main body 31,

fluid supply headers

38, 39 and a fluid discharge header 40 are provided. The

fluid supply headers

38, 39 are formed with a plurality of supply ports aligned in the longitudinal direction of the

fluid supply headers

38, 39, and the fluid discharge header 40 is formed with a plurality of discharge ports aligned in the longitudinal direction of the fluid discharge header 40.

The fluid supply header 38 is connected to the supply port 35 and is provided inside the housing-like main body 31 adjacent to the side opposite the opening 34. In addition, the multiple supply ports formed in line with the fluid supply header 38 face the opening 34 side.

The fluid supply header 39 is connected to the supply port 36 and is provided in the center of the bottom surface inside the housing-like main body 31. In addition, the multiple supply ports formed in line with the fluid supply header 39 face upward.

The fluid discharge header 40 is connected to the discharge port 37 and is located inside the housing-like main body 31 adjacent to the side facing the opening 34 and below the opening 34. In addition, the multiple discharge ports formed next to the fluid discharge header 40 face upward.

The

fluid supply headers

38 and 39 supply the supercritical fluid into the main body 31. The fluid discharge header 40 guides the supercritical fluid in the main body 31 to the outside of the main body 31 and discharges it. The supercritical fluid discharged to the outside of the main body 31 via the fluid discharge header 40 includes IPA liquid that has dissolved in the supercritical fluid in a supercritical state from the surface of the wafer W.

In this drying unit 18, the IPA liquid between the patterns formed on the wafer W comes into contact with the supercritical fluid at a high pressure (for example, 16 MPa) and gradually dissolves in the supercritical fluid, and the spaces between the patterns are gradually replaced by the supercritical fluid. Finally, the spaces between the patterns are filled only with the supercritical fluid.

After the IPA liquid is removed from between the patterns, the pressure inside the main body 31 is reduced from a high pressure state to atmospheric pressure, whereby the _CO2 changes from a supercritical state to a gaseous state, and the spaces between the patterns are occupied only by gas. In this way, the IPA liquid between the patterns is removed, and the drying process of the wafer W is completed.

Here, supercritical fluids have a lower viscosity than liquids (e.g., IPA liquid) and a higher ability to dissolve liquids. In addition, there is no interface between the supercritical fluid and liquids or gases in equilibrium with it. This allows the drying process using the supercritical fluid to dry the liquid without being affected by surface tension. Therefore, according to the embodiment, it is possible to prevent the pattern from collapsing during the drying process.

In the embodiment, an example is shown in which IPA liquid is used as the liquid for preventing drying, and _CO2 in a supercritical state is used as the processing fluid, but a liquid other than IPA may be used as the liquid for preventing drying, and a fluid other than _CO2 in a supercritical state may be used as the processing fluid.

<Configuration of Substrate Processing System>
Next, the configuration of the substrate processing system S according to the embodiment will be described with reference to Fig. 4 and Fig. 5. Fig. 4 is a diagram showing an example of the overall system configuration of the substrate processing system S according to the embodiment. Each part of the substrate processing system S described below can be controlled by a control unit 7.

The substrate processing system S includes a processing fluid supply source 60, a processing fluid supply device 70, and a substrate processing apparatus 1. The processing fluid supply device 70 supplies the processing fluid supplied from the processing fluid supply source 60 to the substrate processing apparatus 1.

As shown in FIG. 4, the substrate processing apparatus 1 has multiple drying units 18 and multiple supply units 19, and processes the wafer W (see FIG. 5) in the drying units 18 with the processing fluid supplied via the corresponding supply units 19.

The treatment fluid supply source 60 and the multiple drying units 18 are connected by a treatment fluid supply line 61, and treatment fluid is supplied from the treatment fluid supply source 60 to the multiple drying units 18 via the treatment fluid supply line 61.

The treatment fluid supply line 61 has a first supply line 62, a plurality of second supply lines 63 (see FIG. 5), a plurality of third supply lines 64, and a plurality of fourth supply lines 65. The third supply line 64 is an example of a supply line, and the fourth supply line 65 is an example of another supply line.

The first supply line 62 supplies the treatment fluid from the treatment fluid supply source 60 to the treatment fluid supply device 70. The first supply line 62 also branches into multiple second supply lines 63 within the treatment fluid supply device 70.

The second supply line 63, the third supply line 64 and the fourth supply line 65 are connected in series in this order, and supply the treatment fluid from the treatment fluid supply device 70 to the drying unit 18 via the supply unit 19.

The second supply line 63 is located within the processing fluid supply device 70. The third supply line 64 is connected between the processing fluid supply device 70 and the substrate processing apparatus 1. The fourth supply line 65 is located within the substrate processing apparatus 1.

FIG. 5 is a diagram showing an example of a piping configuration of a substrate processing system S according to an embodiment. As shown in FIG. 5, the processing fluid supply device 70 has a processing fluid supply line 61. The processing fluid supply line 61 includes a first supply line 62 and multiple (two in the figure) second supply lines 63.

In the first supply line 62, from the upstream side with respect to the treatment fluid supply source 60, there are provided a valve 66, a check valve 67, a junction 71, multiple junctions 72 (two in the figure), a filter 73, a condenser 74, a tank 75, a pump 76, and a branching section 77. In addition, in the first supply line 62, from the upstream side with respect to the branching section 77, there are provided a pressure sensor 78 and a branching section 79.

Valve 66 is a valve that adjusts the flow of the treatment fluid on and off. When open, it allows the treatment fluid to flow to the downstream check valve 67, and when closed, it does not allow the treatment fluid to flow to the downstream check valve 67. The check valve 67 prevents the treatment fluid in the first supply line 62 from flowing back to the upstream side of the check valve 67.

At the junction 71, the first supply line 62 and the return line 90, which will be described later, join. At the junction 72, the first supply line 62 and the return line 100, which will be described later, join.

In addition, in the first supply line 62, the treatment fluid in a gaseous state is supplied from the treatment fluid supply source 60. Furthermore, the liquid treatment fluid returned to the first supply line 62 from the multiple return lines 100 changes from a liquid state to a gaseous state due to the high-temperature gaseous treatment fluid returned to the first supply line 62 from the return line 90. As a result, the treatment fluid in a gaseous state flows into the filter 73.

The filter 73 is, for example, a gas filter, and filters the gaseous processing fluid flowing through the first supply line 62 to remove foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid using the filter 73, it is possible to suppress the generation of particles on the surface of the wafer W during the drying process of the wafer W using a supercritical fluid.

The condenser 74 is connected, for example, to a cooling water supply unit (not shown) and can exchange heat between the cooling water and the gaseous processing fluid. As a result, the condenser 74 cools the gaseous processing fluid flowing through the first supply line 62 to generate a liquid processing fluid at a given temperature (for example, about 15°C) lower than room temperature.

The tank 75 stores the low-temperature liquid-state processing fluid generated in the condenser 74. The pump 76 pumps the low-temperature liquid-state processing fluid stored in the tank 75 to the downstream side of the first supply line 62. A return line 90, which will be described later, branches off from the branching point 77.

The pressure sensor 78 measures the pressure of the treatment fluid flowing through the first supply line 62. Multiple (two in the figure) second supply lines 63 branch off from the branching point 79.

Each second supply line 63 is provided with an orifice 80, a branch 81, and a pressure sensor 82, in that order from the upstream side, based on the branch 79. The orifice 80 reduces the flow rate of the low-temperature liquid-state treatment fluid flowing through the second supply line 63, thereby adjusting the pressure.

The return line 100 branches off from the branch point 81. The pressure sensor 82 measures the pressure of the treatment fluid flowing through the second supply line 63.

The return line 100 returns the liquid treatment fluid flowing through the second supply line 63 to the junction 72 of the first supply line 62. In this way, by returning the treatment fluid to the upstream side through the return line 100, the number of times that it can be filtered can be increased, improving the performance of removing foreign matter.

The return line 100 is provided with a back pressure valve 101 and a valve 102, in that order from the upstream side, based on the branching section 81.

The back pressure valve 101 is configured to adjust the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 100 exceeds the set pressure, thereby maintaining the primary pressure at the set pressure. The valve opening and set pressure of the back pressure valve 101 can be changed at any time by the control unit 7 (see Figure 1).

Valve 102 is a valve that adjusts the flow of the treatment fluid on and off. When open, it allows the treatment fluid to flow to the downstream junction 72, and when closed, it does not allow the treatment fluid to flow to the downstream junction 72.

Then, the liquid-state processing fluid returned from the return line 100 returns to the junction 72 of the first supply line 62. The liquid-state processing fluid returned from the junction 72 changes from the liquid state to the gas state due to the high-temperature gas-state processing fluid returned from the junction 71 and flowing through the first supply line 62.

The return line 90, which branches off from the branch point 77 of the first supply line 62, returns the liquid treatment fluid flowing through the first supply line 62 to the junction 71 of the first supply line 62. In this way, by returning the treatment fluid to the upstream side through the return line 90, the number of times that filtering can be performed can be increased, improving the performance of removing foreign matter.

The return line 90 is provided with a spiral heater 91, a back pressure valve 92, and a valve 93, in that order from the upstream side with respect to the branching point 77. The spiral heater 91 is wound around the return line 90 and heats the liquid processing fluid flowing through the return line 90 to generate a supercritical processing fluid.

The back pressure valve 92 is configured to maintain the primary pressure at the set pressure by adjusting the valve opening to allow fluid to flow to the secondary side when the primary pressure of the return line 90 exceeds the set pressure.

The back pressure valve 92 reduces the pressure of the supercritical processing fluid flowing through the return line 90 to generate a gaseous processing fluid. The valve opening and set pressure of the back pressure valve 92 can be changed at any time by the control unit 7.

Valve 93 is a valve that adjusts the flow of the treatment fluid on and off. When open, it allows the treatment fluid to flow to the downstream junction 71, and when closed, it does not allow the treatment fluid to flow to the downstream junction 71.

Then, the high-temperature gaseous process fluid generated by the back pressure valve 92 returns to the junction 71 of the first supply line 62 via the valve 93.

The processing fluid supply device 70 described above supplies a low-temperature liquid processing fluid to the multiple supply units 19 via the second supply line 63, the third supply line 64, and the fourth supply line 65. That is, in this embodiment, the processing fluid is supplied from the processing fluid supply device 70 to the substrate processing apparatus 1 in a liquid state, not in a gaseous state or a supercritical state.

As a result, even if there is variation in the distance between the treatment fluid supply device 70 and each drying unit 18, i.e., the length of each third supply line 64, problems caused by such variation in length can be reduced.

The control unit 7 measures the pressure of the treatment fluid supplied to the supply unit 19 from the second supply line 63, the third supply line 64, and the fourth supply line 65 using a pressure sensor 82, and controls the pressure by the valve opening degree of the back pressure valve 101. The control unit 7 increases the pressure of the treatment fluid supplied to the supply unit 19, for example, by increasing the set pressure on the primary side of the back pressure valve 101.

The control unit 7 also reduces the pressure of the treatment fluid supplied to the supply unit 19, for example, by lowering the set pressure on the primary side of the back pressure valve 101.

Similarly, the control unit 7 measures the pressure of the processing fluid supplied from the first supply line 62 to the multiple second supply lines 63 using a pressure sensor 78, and controls it by the valve opening of the back pressure valve 92. The control unit 7 then appropriately controls the valve opening of the back pressure valve 92 so that the measured value of the pressure sensor 78 becomes constant.

In addition, in this embodiment, the spiral heater 91 changes the phase of the processing fluid between the pump 76 and the back pressure valve 92 from a liquid state to a supercritical state. In other words, the space between the pump 76 and the valve 41 or the back pressure valve 92, which may be in a closed state, is not filled with processing fluid in a non-compressible liquid state, but is filled with processing fluid in a partially compressible supercritical state.

As a result, even when the pump 76 pumps out the treatment fluid in a liquid state, which is incompressible in the first supply line 62, the pulsation generated by the pump 76 can be absorbed by the part in the supercritical state. Therefore, according to the embodiment, when the treatment fluid in a liquid state is pumped out by the pump 76, the effect of the pulsation generated by the pump 76 can be reduced.

In the substrate processing apparatus 1, the processing fluid flowing through the fourth supply line 65 is supplied to the drying unit 18 and discharged from the drying unit 18 to the outside via the discharge line 50.

The fourth supply line 65 in the substrate processing apparatus 1 is provided with, in order from the upstream side, a valve 41, an orifice 42, a heater 43, a temperature sensor 44, a valve 45, and a filter 46.

Valve 41 is a valve that adjusts the flow of the treatment fluid on and off. When open, it allows the treatment fluid to flow to the downstream orifice 42, and when closed, it does not allow the treatment fluid to flow to the downstream orifice 42.

The orifice 42 serves to reduce the flow rate of the low-temperature liquid-state processing fluid flowing through the fourth supply line 65 and adjust the pressure.

The heater 43 heats the liquid processing fluid flowing through the fourth supply line 65 to generate a supercritical processing fluid. The temperature sensor 44 detects the temperature of the supercritical processing fluid generated by the heater 43.

Valve 45 is a valve that adjusts the flow of the processing fluid on and off. When open, the processing fluid flows through the downstream filter 46, and when closed, the processing fluid does not flow through the downstream filter 46.

The filter 46 filters the supercritical processing fluid flowing through the fourth supply line 65 and removes foreign matter contained in the processing fluid. By removing foreign matter from the processing fluid using the filter 46, it is possible to suppress the generation of particles on the surface of the wafer W during the drying process of the wafer W using the supercritical fluid.

The drying unit 18 is provided with a temperature sensor 47. The temperature sensor 47 detects the temperature of the processing fluid filled in the drying unit 18.

In the discharge line 50, a pressure sensor 51, a valve 52, a flow meter 53, and a back pressure valve 54 are provided in that order from the upstream side. The pressure sensor 51 measures the pressure of the processing fluid flowing through the discharge line 50. Since the pressure sensor 51 is directly connected to the drying unit 18 via the discharge line 50, the pressure of the processing fluid measured by the pressure sensor 51 is approximately equal to the internal pressure of the processing fluid in the drying unit 18.

Valve 52 is a valve that adjusts the flow of the treatment fluid on and off. When open, it allows the treatment fluid to flow to the downstream drain section DR, and when closed, it does not allow the treatment fluid to flow to the downstream drain section DR. Flow meter 53 measures the flow rate of the treatment fluid flowing through discharge line 50.

The back pressure valve 54 is configured to adjust the valve opening to allow fluid to flow to the secondary side when the primary pressure of the discharge line 50 exceeds the set pressure, thereby maintaining the primary pressure at the set pressure. The valve opening and set pressure of the back pressure valve 54 can be changed at any time by the control unit 7.

When wafers W are processed one by one in succession in the drying unit 18 of the substrate processing apparatus 1, a low-temperature liquid processing fluid is continuously supplied to the heater 43 for the second and subsequent wafers W after the start of processing, and is converted into a supercritical processing fluid by the heater 43. The supercritical processing fluid is then supplied to the drying unit 18, whereby the wafers W are dried.

On the other hand, for the first wafer W after the start of processing, the liquid processing fluid retained in the third supply line 64 is supplied to the heater 43 by the valve 41, which is closed until just before the start of processing. The liquid processing fluid retained in the third supply line 64 has a lower density than when it is at low temperature because its temperature has risen to room temperature while retained.

Therefore, when the second wafer W is heated by the heater 43 under the same recipe conditions as the second wafer W and supplied to the drying unit 18, the density of the processing fluid flowing through the heater 43 is different, and the behavior of the temperature and pressure of the second and subsequent wafers W and the processing fluid will be different.

As a result, the first wafer W and the second and subsequent wafers W may end up in different processing states after the drying process.

Therefore, in this embodiment, as shown in FIG. 5, a temperature sensor 110 is provided in the third supply line 64. The temperature sensor 110 is an example of a temperature measurement unit.

For example, before the wafer W is loaded into the drying unit 18, the control unit 7 uses the temperature sensor 110 to measure at least one of the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself.

If the temperature measured by the temperature sensor 110 is the same as the temperature of the liquid processing fluid generated by the processing fluid supply device 70 (for example, in the case of the second or subsequent wafer W), the control unit 7 supplies the processing fluid to the drying unit 18 under processing conditions according to the standard recipe.

On the other hand, if the temperature measured by the temperature sensor 110 is different from the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70 (for example, in the case of the first wafer W), the control unit 7 changes the processing conditions from the standard recipe and supplies the processing fluid to the drying unit 18.

For example, if the temperature measured by the temperature sensor 110 is 20°C or higher, the control unit 7 changes the processing conditions from the standard recipe and supplies the processing fluid to the drying unit 18.

In this case, for example, the control unit 7 adjusts the valve opening of the back pressure valve 101 to set the pressure of the processing fluid supplied to the fourth supply line 65 via the second supply line 63 and the third supply line 64 to a level higher than the processing conditions according to the standard recipe.

This allows the density of the liquid-state processing fluid flowing through the heater 43 to be uniform. Therefore, even if the temperature measured by the temperature sensor 110 differs from the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70, the behavior of the temperature and pressure of the processing fluid can be uniform between the first wafer W and the second and subsequent wafers W.

Therefore, according to the embodiment, a stable drying process can be performed using the processing fluid from the first wafer W after processing begins.

In addition, in the embodiment, the control unit 7 may adjust the output of the heater 43 to change the temperature of the processing fluid heated by the heater 43 from the processing conditions according to the standard recipe.

This makes it possible to make the density of the supercritical processing fluid supplied from the heater 43 to the drying unit 18 uniform. Therefore, even if the temperature measured by the temperature sensor 110 differs from the temperature of the liquid processing fluid generated by the processing fluid supply device 70, the behavior of the temperature and pressure of the processing fluid can be made uniform between the first wafer W and the second and subsequent wafers W.

In addition, in the embodiment, the control unit 7 may measure the temperature with the temperature sensor 110 before loading the wafer W into the drying unit 18. This allows the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself to be known in advance, so that the subsequent drying process of the wafer W can be carried out smoothly.

Note that the technology disclosed herein is not limited to measuring the temperature with the temperature sensor 110 before the wafer W is loaded into the drying unit 18, but may also measure the temperature with the temperature sensor 110 when the wafer W is loaded into the drying unit 18 or after the wafer W is loaded into the drying unit 18.

<Modification 1>
Next, various modified examples of the embodiment will be described with reference to Fig. 6 to Fig. 11. Fig. 6 is a diagram showing an example of a piping configuration of a substrate processing system S according to a first modified example of the embodiment.

As shown in FIG. 6, in the substrate processing system S according to the first modification, the configuration of the processing fluid supply device 70 and the third supply line 64 differs from that of the above-described embodiment. Therefore, in the following examples, the same reference numerals are used for parts similar to those of the already-described embodiment, and detailed descriptions are omitted.

Specifically, in the first modification, a branch portion 120 is provided in the third supply line 64. The branch portion 120 is located, for example, in the vicinity of the substrate processing apparatus 1 in the third supply line 64.

Furthermore, a return line 130 branches off from the branching section 120. The return line 130 is an example of a temperature maintenance mechanism. The return line 130 joins the joining section 104 located upstream of the back pressure valve 101 in the return line 100.

A valve 131 is provided in the return line 130. The valve 131 is a valve that adjusts the flow of the treatment fluid on and off, and when open, it allows the treatment fluid to flow to the downstream junction 104, and when closed, it does not allow the treatment fluid to flow to the downstream junction 104.

A valve 103 is provided upstream of the junction 104 in the return line 100. The valve 103 is a valve that adjusts the flow of the treatment fluid on and off, and when open, the treatment fluid flows to the junction 104 on the downstream side, and when closed, the treatment fluid does not flow to the junction 104 on the downstream side.

In addition, in the first modification, the temperature sensor 110 provided in the third supply line 64 in the above embodiment may be provided.

FIG. 7 is a diagram showing an example of the operation of the substrate processing system S according to the first modified embodiment, and is a diagram explaining the flow of the processing fluid when the drying process of the wafer W is being performed.

As shown by the thick dashed line in FIG. 7, in variant 1, when the wafer W is being dried, the low-temperature liquid processing fluid pumped by the pump 76 passes through the second supply line 63 and the third supply line 64 and reaches the valve 41 of the fourth supply line 65.

Furthermore, when the wafer W is being dried, the valve 41 is controlled to be open, so that the processing fluid is supplied to the drying unit 18 via the fourth supply line 65.

In addition, in the first modified example, the liquid treatment fluid returns to the junction 71 via the return line 90. Also, because the valve 103 is controlled to be open, the liquid treatment fluid returns to the junction 72 from the branch 81 via the return line 100. At this time, the valve 131 of the return line 130 is controlled to be closed, so no treatment fluid flows through the return line 130.

As shown in FIG. 7, in the first modification, when the wafer W is being dried, the low-temperature liquid processing fluid continues to flow through the third supply line 64, so that there is no increase in the temperature of the processing fluid due to stagnation in the third supply line 64.

FIG. 8 is a diagram showing an example of the operation of the substrate processing system S according to the first modified embodiment, and explains the flow of processing fluid when the drying process of the wafer W is not being performed and the drying unit 18 is in a standby state.

When the drying unit 18 is in standby mode, as shown by the thick dashed line in Figure 8, the low-temperature liquid treatment fluid pumped by the pump 76 travels through the second supply line 63 and the third supply line 64 and reaches the branch point 120 of the third supply line 64.

On the other hand, since the drying unit 18 is in a standby state, the valve 41 of the substrate processing apparatus 1 is controlled to a closed state, and no liquid processing fluid flows into the fourth supply line 65.

On the other hand, in the first modification, the valve 131 of the return line 130 is controlled to be open, so that the low-temperature liquid-state processing fluid that has reached the branch point 120 of the third supply line 64 can be returned to the junction point 72 via the return line 130 and the return line 100. At this time, the valve 103 of the return line 100 is controlled to be closed.

In this way, in variant 1, by providing the return line 130, it is possible to maintain the flow of low-temperature liquid treatment fluid through the third supply line 64 even when the drying unit 18 is in standby mode.

This prevents liquid processing fluid from stagnation in the third supply line 64, so that the temperature of the processing fluid located in the third supply line 64 can be made uniform between the first wafer W and the second and subsequent wafers W after the start of processing.

Therefore, according to variant example 1, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after the start of processing and the second and subsequent wafers W, so that a stable drying process can be performed with the processing fluid from the first wafer W after the start of processing.

Furthermore, in the first modification, the return line 130 may be connected to the third supply line 64 near the substrate processing apparatus 1. That is, in the first modification, the branch portion 120 may be located near the substrate processing apparatus 1 on the third supply line 64.

As a result, when the drying unit 18 is in standby, most of the liquid-state processing fluid in the third supply line 64 can be returned via the return line 130, thereby preventing most of the liquid-state processing fluid in the third supply line 64 from stagnating.

In other words, in variant 1, the temperature of the processing fluid located in the third supply line 64 can be precisely matched between the first wafer W and the second and subsequent wafers W after the start of processing.

Therefore, according to variant example 1, the temperature and pressure behavior of the processing fluid can be precisely aligned between the first wafer W after the start of processing and the second and subsequent wafers W, allowing for a more stable drying process to be performed with the processing fluid, starting from the first wafer W after the start of processing.

<Modification 2>
9 is a diagram showing an example of a piping configuration of a substrate processing system S according to Modification 2 of the embodiment. As shown in FIG. 9, in the substrate processing system S according to Modification 2, the branching portion 120 is located not in the third supply line 64 but in the fourth supply line 65 in the substrate processing apparatus 1.

Specifically, in variant 2, the branch portion 120 is located upstream of the valve 41 in the fourth supply line 65.

As with the first modified example described above, by providing the return line 130, it is possible to maintain the flow of low-temperature liquid treatment fluid through the third supply line 64 even when the drying unit 18 is in standby mode.

In other words, in the second modification, the low-temperature liquid processing fluid can be prevented from stagnation in the third supply line 64, so that the temperature of the processing fluid located in the third supply line 64 can be made uniform between the first wafer W and the second and subsequent wafers W after the start of processing.

Therefore, according to variant example 2, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after the start of processing and the second and subsequent wafers W, so that a stable drying process can be performed with the processing fluid from the first wafer W after the start of processing.

In addition, in the second modification, the branching section 120 is located in the fourth supply line 65 in the substrate processing apparatus 1, so that when the drying unit 18 is in a standby state, all liquid-state processing fluid located in the third supply line 64 can be returned via the return line 130.

This prevents all liquid processing fluid in the third supply line 64 from stagnating, so that the temperature of the processing fluid in the third supply line 64 can be precisely matched between the first wafer W and the second and subsequent wafers W after processing begins.

Therefore, according to variant example 2, the temperature and pressure behavior of the processing fluid can be precisely aligned between the first wafer W after the start of processing and the second and subsequent wafers W, allowing for a more stable drying process to be performed with the processing fluid, starting from the first wafer W after the start of processing.

<Modification 3>
Fig. 10 is a diagram showing an example of a piping configuration of a substrate processing system S according to Modification 3 of the embodiment. As shown in Fig. 10, in the substrate processing system S according to Modification 3, a branching portion 120 is located between the heater 43 and the valve 45 in the fourth supply line 65.

In other words, in the third modification, the low-temperature liquid processing fluid can be prevented from stagnation in the third supply line 64, so that the temperature of the processing fluid located in the third supply line 64 can be made uniform between the first wafer W and the second and subsequent wafers W after the start of processing.

Therefore, according to variant example 3, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after the start of processing and the second and subsequent wafers W, so that a stable drying process can be performed with the processing fluid from the first wafer W after the start of processing.

In addition, in the third modified example, the branching section 120 is located in the fourth supply line 65 in the substrate processing apparatus 1, so that when the drying unit 18 is in a standby state, all liquid processing fluid located in the third supply line 64 can be returned via the return line 130.

Therefore, according to variant example 3, the temperature and pressure behavior of the processing fluid can be precisely aligned between the first wafer W after the start of processing and the second and subsequent wafers W, allowing for a more stable drying process to be performed with the processing fluid, starting from the first wafer W after the start of processing.

In addition, in the third variant, when the drying unit 18 is in a standby state, the valve 41 is controlled to an open state rather than a closed state, and the valve 45 is controlled to a closed state.

<Modification 4>
In each of the first to third modified examples described above, the return line 130 is used as a temperature maintaining mechanism for maintaining the temperature of the processing fluid in the third supply line 64, but the present disclosure is not limited to such an example.

FIG. 11 is a diagram showing an example of the piping configuration of a substrate processing system S according to the fourth modification of the embodiment. As shown in FIG. 11, in the substrate processing system S according to the fourth modification, a cooling mechanism 140 that cools the third supply line 64 is provided as a temperature maintenance mechanism that maintains the temperature of the processing fluid in the third supply line 64.

The cooling mechanism 140 is, for example, a chiller, and is positioned so as to surround the third supply line 64. The cooling mechanism 140 maintains the temperature of the treatment fluid located in the third supply line 64 at a given temperature (the temperature of the liquid treatment fluid generated by the treatment fluid supply device 70).

This also makes it possible to make the temperature of the processing fluid located in the third supply line 64 uniform between the first wafer W and the second and subsequent wafers W after the start of processing.

Therefore, according to variant example 4, the temperature and pressure behavior of the processing fluid can be made uniform between the first wafer W after the start of processing and the second and subsequent wafers W, so that a stable drying process can be performed with the processing fluid from the first wafer W after the start of processing.

The substrate processing system S according to the embodiment includes a processing fluid supply device 70, a substrate processing apparatus 1, a supply line (third supply line 64), and a temperature measurement unit (temperature sensor 110). The processing fluid supply device 70 supplies processing fluid adjusted to a given temperature. The substrate processing apparatus 1 processes a substrate (wafer W) with the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing apparatus 1. The temperature measurement unit (temperature sensor 110) measures at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) in the supply line (third supply line 64). This allows stable drying processing to be performed with the processing fluid from the first wafer W after processing begins.

The substrate processing system S according to the embodiment further includes a control unit 7 that controls each unit. When the temperature measured by the temperature measurement unit (temperature sensor 110) differs from a given temperature, the control unit 7 changes at least one of the pressure of the processing fluid supplied from the processing fluid supply device 70 and the temperature of the processing fluid heated in the substrate processing apparatus 1 from the reference recipe. This allows stable drying processing to be performed with the processing fluid from the first wafer W after processing begins.

In addition, in the substrate processing system S according to the embodiment, the control unit 7 measures the temperature using the temperature measurement unit (temperature sensor 110) before the substrate (wafer W) is loaded into the processing chamber (drying unit 18) in the substrate processing apparatus 1. This allows the drying process of the wafer W to be carried out smoothly.

The substrate processing system S according to the embodiment includes a processing fluid supply device 70, a substrate processing apparatus 1, a supply line (third supply line 64), and a temperature maintenance mechanism (return line 130, cooling mechanism 140). The processing fluid supply device 70 supplies processing fluid adjusted to a given temperature. The substrate processing apparatus 1 processes a substrate (wafer W) with the processing fluid supplied from the processing fluid supply device 70. The supply line (third supply line 64) is connected between the processing fluid supply device 70 and the substrate processing apparatus 1. The temperature maintenance mechanism (return line 130, cooling mechanism 140) maintains the temperature of the processing fluid flowing through the supply line (third supply line 64) at a given temperature. This allows stable drying processing to be performed with the processing fluid from the first wafer W after processing begins.

In addition, in the substrate processing system S according to the embodiment, the temperature maintenance mechanism is a return line 130 that returns the processing fluid flowing through the supply line (third supply line 64) to the processing fluid supply device 70. This allows stable drying processing to be performed with the processing fluid, starting from the first wafer W after processing begins.

The substrate processing system S according to the embodiment further includes a control unit 7 that controls each unit. When a substrate (wafer W) has not been loaded into the processing chamber (drying unit 18) in the substrate processing apparatus 1, the control unit 7 returns the processing fluid flowing through the supply line (third supply line 64) to the processing fluid supply device 70 via the return line 130. This allows stable drying processing to be performed with the processing fluid, starting from the first wafer W after processing begins.

Furthermore, in the substrate processing system S according to the embodiment, the return line 130 is connected to the supply line (third supply line 64) near the substrate processing apparatus 1. This allows for more stable drying processing with the processing fluid to be performed from the first wafer W after processing begins.

In addition, in the substrate processing system S according to the embodiment, the substrate processing apparatus 1 has a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a valve 41. The processing chamber (drying unit 18) processes a substrate (wafer W). The another supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The valve 41 is provided upstream of the another supply line (fourth supply line 65). The return line 130 is connected upstream of the valve 41 in the another supply line (fourth supply line 65). This allows for more stable drying processing with the processing fluid, starting from the first wafer W after processing begins.

In addition, in the substrate processing system S according to the embodiment, the substrate processing apparatus 1 has a processing chamber (drying unit 18), another supply line (fourth supply line 65), and a heating section (heater 43). The processing chamber (drying unit 18) processes a substrate (wafer W). The other supply line (fourth supply line 65) is connected between the supply line (third supply line 64) and the processing chamber (drying unit 18). The heating section (heater 43) is provided in the other supply line (fourth supply line 65) and heats the processing fluid. In addition, the return line 130 is connected downstream of the heating section (heater 43). This allows for more stable drying processing with the processing fluid, starting from the first wafer W after processing begins.

Furthermore, in the substrate processing system S according to the embodiment, the processing fluid supply device 70 supplies a processing fluid in a liquid state that is lower than room temperature to the substrate processing apparatus 1, and the substrate processing apparatus 1 processes the substrate (wafer W) with the processing fluid in a supercritical state. As a result, even if there is variation in the lengths of the multiple third supply lines 64, problems caused by such variation in length can be reduced.

<Substrate processing procedure>
Next, a procedure for substrate processing according to the embodiment will be described with reference to Fig. 12 and Fig. 13. Fig. 12 is a flowchart showing the procedure for substrate processing according to the embodiment.

In the substrate processing according to the embodiment, first, the control unit 7 controls the temperature sensor 110 to measure the temperature of the third supply line 64, in this case at least one of the temperature of the processing fluid in the third supply line 64 and the temperature of the third supply line 64 itself (step S101).

If the temperature measured by the temperature sensor 110 does not differ from the given temperature (the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70) (step S102, No), the control unit 7 reads the reference recipe (step S103).

On the other hand, if the temperature measured by the temperature sensor 110 is different from the given temperature (the temperature of the liquid-state processing fluid generated by the processing fluid supply device 70) (step S102, Yes), the control unit 7 changes the reference recipe (step S104).

Next, the control unit 7 controls the substrate processing apparatus 1 and the like to transport the wafer W on which the IPA liquid film has been formed into the drying unit 18 (step S105).

Then, the control unit 7 controls the processing fluid supply device 70, the substrate processing apparatus 1, etc. to supply the processing fluid in a supercritical state to the drying unit 18 (step S106). Then, the control unit 7 performs a drying process on the wafer W in the drying unit 18 (step S107).

Finally, the control unit 7 removes the wafer W for which the drying process has been completed from the drying unit 18 (step S108), completing the series of substrate processing steps.

FIG. 13 is a flowchart showing the processing procedure for substrate processing according to the first to fourth modified embodiments.

In the substrate processing according to the first to fourth variations, the control unit 7 first controls the return line 130, the cooling mechanism 140, etc. to maintain the temperature of the processing fluid in the third supply line 64 at a given temperature (the temperature of the liquid processing fluid generated by the processing fluid supply device 70) (step S201).

Then, the control unit 7 reads the reference recipe (step S202). Then, the control unit 7 controls the substrate processing apparatus 1 and the like to load the wafer W on which the IPA liquid film has been formed into the drying unit 18 (step S203).

Then, the control unit 7 controls the processing fluid supply device 70, the substrate processing apparatus 1, etc. to supply the processing fluid in a supercritical state to the drying unit 18 (step S204). Then, the control unit 7 performs a drying process on the wafer W in the drying unit 18 (step S205).

Finally, the control unit 7 removes the wafer W for which the drying process has been completed from the drying unit 18 (step S206), completing the series of substrate processing steps.

The substrate processing method according to the embodiment includes a processing fluid supply step (step S106), a substrate processing step (step S107), and a temperature measurement step (step S101). The processing fluid supply step (step S106) supplies a processing fluid adjusted to a given temperature. The substrate processing step (step S107) processes a substrate (wafer W) with the processing fluid supplied by the processing fluid supply step (step S106). The temperature measurement step (step S101) measures at least one of the temperature of the processing fluid and the temperature of the supply line (third supply line 64) in the supply line (third supply line 64). The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S106) and the substrate processing apparatus 1 that performs the substrate processing step (step S107). This allows stable drying processing with the processing fluid from the first wafer W after the start of processing.

The substrate processing method according to the embodiment includes a processing fluid supply step (step S204), a substrate processing step (step S205), and a temperature maintenance step (step S201). The processing fluid supply step (step S204) supplies a processing fluid adjusted to a given temperature. The substrate processing step (step S205) processes a substrate (wafer W) with the processing fluid supplied by the processing fluid supply step (step S204). The temperature maintenance step (step S201) maintains the temperature of the processing fluid flowing through the supply line (third supply line 64) at a given temperature. The supply line (third supply line 64) is connected between the processing fluid supply device 70 that performs the processing fluid supply step (step S204) and the substrate processing apparatus 1 that performs the substrate processing step (step S205). This allows stable drying processing with the processing fluid from the first wafer W after the start of processing.

The above describes an embodiment of the present disclosure, but the present disclosure is not limited to the above embodiment, and various modifications are possible without departing from the spirit of the present disclosure. For example, in the above embodiment, an example is shown in which the first supply line 62 branches into two second supply lines 63, but the present disclosure is not limited to such an example, and the first supply line 62 may branch into three second supply lines 63. In addition, the first supply line 62 does not have to branch into multiple second supply lines 63.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in a variety of forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

S: Substrate processing system W: Wafer (an example of a substrate)
1 Substrate processing apparatus 7 Control unit 18 Drying unit (an example of a processing chamber)
41 Valve 43 Heater (an example of a heating unit)
60 Processing fluid supply source 61 Processing fluid supply line 62 First supply line 63 Second supply line 64 Third supply line (an example of a supply line)
65 Fourth supply line (an example of another supply line)
70 Processing fluid supply device 110 Temperature sensor (an example of a temperature measuring unit)
120 Branching portion 130 Return line (an example of a temperature maintaining mechanism)
140 Cooling mechanism (an example of a temperature maintaining mechanism)

Claims

A process fluid supply device that supplies a process fluid regulated to a given temperature;
a substrate processing apparatus for processing a substrate with the processing fluid supplied from the processing fluid supply apparatus;
a supply line connected between the processing fluid supply device and the substrate processing apparatus;
a temperature measuring unit in the supply line that measures at least one of a temperature of the processing fluid and a temperature of the supply line;
A substrate processing system comprising:
A control unit for controlling each unit is further provided.
2. The substrate processing system of claim 1, wherein the control unit changes at least one of a pressure of the processing fluid supplied from the processing fluid supply device and a temperature of the processing fluid heated in the substrate processing device from a standard recipe when the temperature measured by the temperature measuring unit is different from the given temperature.
The substrate processing system according to claim 2 , wherein the control unit measures the temperature with the temperature measuring unit before the substrate is loaded into a processing chamber in the substrate processing apparatus.
A process fluid supply device that supplies a process fluid regulated to a given temperature;
a substrate processing apparatus for processing a substrate with the processing fluid supplied from the processing fluid supply apparatus;
a supply line connected between the processing fluid supply device and the substrate processing apparatus;
a temperature maintenance mechanism for maintaining the temperature of the process fluid flowing through the supply line at the given temperature;
A substrate processing system comprising:
The substrate processing system of claim 4 , wherein the temperature maintaining mechanism is a return line that returns the processing fluid flowing through the supply line to the processing fluid supply device.
A control unit for controlling each unit is further provided.
The substrate processing system according to claim 5 , wherein the control unit returns the processing fluid flowing through the supply line to the processing fluid supply device via the return line when the substrate is not loaded into a processing chamber in the substrate processing device.
The substrate processing system according to claim 5 , wherein the return line is connected to the supply line in a vicinity of the substrate processing apparatus.
The substrate processing apparatus includes:
a processing chamber for processing the substrate;
another supply line connected between the supply line and the processing chamber;
a valve provided upstream of the other supply line;
having
The substrate processing system according to claim 5 or 6, wherein the return line is connected to the upstream side of the valve in the other supply line.
The substrate processing apparatus includes:
a processing chamber for processing the substrate;
another supply line connected between the supply line and the processing chamber;
a heating unit provided in the separate supply line for heating the treatment fluid;
having
The substrate processing system according to claim 5 , wherein the return line is connected to a downstream side of the heating unit.
the processing fluid supply device supplies a processing fluid in a liquid state at a temperature lower than room temperature to the substrate processing apparatus;
7. The substrate processing system according to claim 1, wherein the substrate processing apparatus processes the substrate with a processing fluid in a supercritical state.
a process fluid supply step of supplying a process fluid adjusted to a given temperature;
a substrate processing step of processing a substrate with the processing fluid supplied by the processing fluid supply step;
a temperature measuring step of measuring at least one of a temperature of the processing fluid and a temperature of a supply line connected between a processing fluid supplying device performing the processing fluid supplying step and a substrate processing device performing the substrate processing step;
A substrate processing method comprising: