WO2024082974A1 - 一种基于差分驱动和推挽的薄膜铌酸锂电光调制器 - Google Patents

一种基于差分驱动和推挽的薄膜铌酸锂电光调制器 Download PDF

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WO2024082974A1
WO2024082974A1 PCT/CN2023/123393 CN2023123393W WO2024082974A1 WO 2024082974 A1 WO2024082974 A1 WO 2024082974A1 CN 2023123393 W CN2023123393 W CN 2023123393W WO 2024082974 A1 WO2024082974 A1 WO 2024082974A1
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electrode
lithium niobate
signal electrode
thin
metal
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PCT/CN2023/123393
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English (en)
French (fr)
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戴道锌
王迈
陈耿鑫
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浙江大学
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Publication of WO2024082974A1 publication Critical patent/WO2024082974A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G02F1/0316—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13—Integrated optical circuits characterised by the manufacturing method
    • G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/0305—Constructional arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12035—Materials
    • G02B2006/1204—Lithium niobate (LiNbO3)
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12133—Functions
    • G02B2006/12142—Modulator
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12166—Manufacturing methods
    • G02B2006/12176—Etching

Definitions

  • the present invention relates to an electro-optic modulator and a preparation method thereof in the field of optical communication, optical sensing and optical integration technology, and in particular to a novel thin-film lithium niobate electro-optic modulator based on differential drive capacitive load type periodic structure electrode and a preparation method thereof.
  • the data center As an example, according to the data comparison given by CISCO, the leader in the optical communication industry, from 2017 to 2021, the network traffic of the data center alone will increase by 174%, and the overall data capacity within the data center will be as high as 70%, and the power consumption pressure will continue to increase. Therefore, how to effectively solve the problem of large-capacity and low-power data transmission has become an urgent problem that the optical communication industry needs to solve.
  • silicon-based optoelectronic integration technology with silicon as the substrate has developed rapidly due to its low cost, excellent passive performance, and CMOS compatibility.
  • silicon itself does not have the electro-optic effect (G. T. Reed and A. P. Knights, Silicon Photonics: An Introduction: John Wiley & Sons, Inc., 2004.)
  • electro-optic modulation by other means such as electro-absorption F-K effect or carrier injection effect, and the modulation rate cannot reach a very high speed (ns level).
  • the electro-optic modulation bandwidth based on pure silicon can only reach about 40GHz at present, which cannot meet the current bandwidth requirements of 100G, 400G or even 1.6T in the future. Therefore, thin-film lithium niobate-based electro-optic modulators with large bandwidth, low power consumption, low insertion loss, and high speed have received widespread attention in recent years.
  • the modulation rate has generally transitioned from 100G to 400G, and it is very likely to move directly to a modulation rate of 1.6T in the future.
  • the present invention proposes a novel thin-film lithium niobate electro-optic modulator based on differential drive capacitive load type periodic structure electrode and a preparation method thereof.
  • the present invention combines differential drive and push-pull structure on a thin-film lithium niobate modulator for the first time.
  • the inventive structure can be applied to the current silicon-based heterogeneous integration platform, which also improves the feasibility of the new electro-optic modulator in other fields such as optical communications in the future.
  • a thin-film lithium niobate electro-optic modulator based on differential drive and push-pull 1.
  • It includes a substrate, a buried oxide layer, a lithium niobate layer, and a cladding arranged in sequence from bottom to top, a thin-film lithium niobate optical waveguide is provided under the cladding, and a differential traveling wave electrode arranged along the waveguide direction is provided on the cladding, and the differential traveling wave electrode includes a periodic structure electrode, a positive signal electrode, a negative signal electrode, and a grounding electrode; the positive signal electrode and the negative signal electrode are respectively arranged on both sides directly above the thin-film lithium niobate optical waveguide, and two grounding electrodes are respectively arranged on the outer sides of the positive signal electrode and the negative signal electrode, and the periodic structure electrode is arranged on the cladding directly above the thin-film lithium niobate optical waveguide.
  • the periodic structure electrode is composed of metal electrodes arranged in a periodic structure.
  • the periodic structure electrode includes a group of metal electrode groups connected to the positive signal electrode and another group of metal electrode groups connected to the negative signal electrode.
  • Each group of metal electrode groups is composed of a plurality of metal electrodes that are evenly spaced along the waveguide direction and connected to the positive signal electrode/negative signal electrode.
  • the metal electrodes are in a T-shape or a U-shape.
  • the longitudinal metal strip in the middle of the T-shape or the U-shape is connected to the positive signal electrode/negative signal electrode, and the transverse metal strips are arranged parallel to the waveguide direction.
  • the metal electrodes in the same group of metal electrode groups have the same shape.
  • the metal electrodes in the metal electrode group of the positive signal electrode and the metal electrodes in the metal electrode group of the negative signal electrode are alternately arranged in sequence along the waveguide direction.
  • the transverse branches of the metal electrodes in the metal electrode group of the positive signal electrode and the transverse branches of the metal electrodes in the metal electrode group of the negative signal electrode are interlaced and arranged.
  • the differential traveling wave electrode is formed by plating on the cladding. A voltage is applied to the differential traveling wave electrode to modulate the optical wave signal.
  • the thin-film lithium niobate optical waveguide is formed by etching on a lithium niobate layer and is covered by a cladding layer.
  • the thin-film lithium niobate optical waveguide comprises a 1*2 beam splitter, a Mach-Zehnder structure and a 2*1 beam combiner.
  • the 1*2 beam splitter and the 2*1 beam combiner are respectively located on both sides of the Mach-Zehnder structure.
  • the input end of the 1*2 beam splitter is used to input an optical signal.
  • the two output ends of the 1*2 beam splitter are connected via the Mach-Zehnder structure and the two input ends of the 2*1 beam combiner.
  • the output end of the 2*1 beam combiner is used to output an optical signal.
  • the positive signal electrode and the negative signal electrode are respectively arranged on both sides directly above the Mach-Zehnder structure, and the periodic structure electrode is arranged directly above the Mach-Zehnder structure.
  • the Mach-Zehnder structure includes two branch arms, and the two output ends of the 1*2 beam splitter are connected to the two input ends of the 2*1 beam combiner through their own branch arms.
  • the light is divided into two beams by the 1*2 beam splitter, passes through the upper and lower branch arms of the Mach-Zehnder structure respectively, and finally is combined into one beam by the 2*1 beam combiner.
  • the two branch arms of the Mach-Zehnder structure are located below the middle of the metal signal electrode and are also located below the middle of the periodic structure electrode.
  • the differential traveling wave electrodes form a differential driving structure, and the differential traveling wave electrodes and the Mach-Zehnder structure form a push-pull structure.
  • the present invention sets up a periodic structure electrode, in which metal electrodes are arranged alternately in pairs and are located between the positive and negative signal electrodes of the metal.
  • the introduction of the periodic structure electrode can combine the differential drive structure and the push-pull structure to form a differential modulator, so that the modulation length is halved and the bandwidth performance is improved.
  • the substrate is silicon, lithium niobate, quartz or air, and the buried oxide layer is silicon dioxide with a thickness of 1-6um.
  • the waveguide inclination angle of the waveguide modulation region of the thin-film lithium niobate optical waveguide is 60-70 degrees, the overall thickness is 200-600nm, and the etching thickness is 100-300nm.
  • the cladding is silicon dioxide with a thickness of 0.1-3um.
  • a method for preparing a thin film lithium niobate electro-optic modulator comprising the following steps:
  • Step 1 depositing a buried oxide layer on the substrate
  • Step 2 preparing a lithium niobate layer on the buried oxide layer
  • Step 3 using electron beam exposure or photolithography to prepare micro-nano patterns on the lithium niobate layer, and then using etching to form a thin-film lithium niobate optical waveguide;
  • the 1*2 beam splitter, Mach-Zehnder structure and 2*1 beam combiner are also prepared at the same time.
  • Step 4 depositing a silicon dioxide cladding layer on the lithium niobate layer
  • Step 5 Sputtering or evaporating a first thin metal layer on the silicon dioxide cladding to serve as a periodic structure electrode and part of a positive signal electrode, a negative signal electrode and a ground electrode;
  • Step 6 Sputtering or evaporation is used to deposit a second layer of thick metal as the remaining positive signal electrode, negative signal electrode and ground electrode, thereby completing the preparation of the thin film lithium niobate electro-optic modulator.
  • the photolithography methods include stepper lithography, contact lithography, electron beam direct writing, laser direct writing, etc.
  • the etching method includes dry etching and wet etching.
  • the dry etching includes focused ion beam etching and reactive ion etching.
  • the sputtering method includes magnetron sputtering, electron beam evaporation and electroplating.
  • the present invention innovatively introduces electrodes with a specific periodic structure, and realizes the combination of differential signal driving and push-pull structure by adopting electrodes with a specific periodic structure, thereby doubling the modulation voltage and realizing double voltage modulation, thereby effectively shortening the size of the modulator.
  • the present invention combines differential signal driving with a push-pull structure by introducing a specific periodic structure electrode to achieve double voltage modulation.
  • the present invention introduces electrodes with a specific periodic structure, and while ensuring that the electrode spacing on both sides of the waveguide is small enough, an extremely small product of half-wave voltage and length can be obtained. At the same time, the extremely small electrode spacing also limits the microwave field to a smaller range, ensuring that the radiation loss caused by the substrate can be greatly reduced under high-frequency conditions.
  • the present invention uses the method of modulating the waveguide bending in the region to mitigate the slow wave effect caused by the periodic structure electrode, thereby achieving efficient speed matching between microwaves and light waves.
  • FIG1 is a flow chart of the preparation of the novel thin-film lithium niobate electro-optic modulator of the present invention.
  • FIG. 2 is a top view of the overall device of the novel thin-film lithium niobate electro-optic modulator of the present invention.
  • FIG. 3 is a schematic diagram of a bending method of a modulation zone waveguide in the present invention.
  • FIG. 4 is a transverse cross-sectional view of the structure obtained in step 1 of the preparation method of the present invention at the black dotted line in FIG. 2 .
  • FIG. 5 is a transverse cross-sectional view of the structure obtained in step 2 of the preparation method of the present invention at the black dotted line in FIG. 2 .
  • FIG. 6 is a transverse cross-sectional view of the structure obtained in step 3 of the preparation method of the present invention at the black dotted line in FIG. 2 .
  • FIG. 7 is a transverse cross-sectional view of the structure obtained in step 4 of the preparation method of the present invention at the black dotted line in FIG. 2 .
  • FIG8 is a transverse cross-sectional view of the structure obtained in step 5 of the preparation method of the present invention at the black dotted line in FIG2 .
  • FIG. 9 is a transverse cross-sectional view of the structure obtained in step 6 of the preparation method of the present invention at the black dotted line in FIG. 2 .
  • FIG. 10 is another representation of the periodic structure electrode and its relative position to the waveguide.
  • FIG. 11 is another representation of the periodic structure electrode and its relative position to the waveguide.
  • FIG. 12 is a schematic diagram of a periodic structure electrode enlarged by the black dashed box in FIG. 2 .
  • the present invention realizes the combination of push-pull structure and differential drive on a thin-film lithium niobate modulator for the first time, and the invention is specifically manifested in structural innovation.
  • FIG9 a schematic cross-sectional view of the black dashed line in FIG2 is shown.
  • This embodiment includes a substrate 1, a buried oxide layer 2, a lithium niobate layer 3, a thin-film lithium niobate optical waveguide 4, a cladding 5, a periodic structure electrode 6, a positive signal electrode 7, a negative signal electrode 8 and a ground electrode 9 arranged in sequence from bottom to top.
  • An etching process is performed on the lithium niobate layer 3 to form a thin-film lithium niobate optical waveguide 4 , and the thin-film lithium niobate optical waveguide 4 is arranged to form a 1*2 beam splitter 10 , a Mach-Zehnder structure 11 , and a 2*1 beam combiner 12 .
  • the periodic structure electrodes 6 are arranged in pairs between the positive signal electrode 7 and the negative signal electrode 8, and the positive signal electrode 7 and the negative signal electrode 8 are located between the two ground electrodes 9.
  • the substrate 1 is silicon
  • the buried oxide layer 2 is silicon dioxide with a thickness of 3 um
  • the lithium niobate layer 3 has an overall thickness of 400 nm
  • the waveguide 4 has a thickness of 200 nm
  • the waveguide 4 has an inclination angle of 60 degrees.
  • the periodic structure electrode 6 can be the structure in FIG. 2 , or can be the structure in FIG. 10 , FIG. 11 or other similar structures.
  • the relative positions of the waveguide and the periodic structure electrode are shown in FIG. 2 , FIG. 10 , and FIG. 11 .
  • the periodic structure electrode 6 includes a group of metal electrodes connected to the positive signal electrode 7 and another group of metal electrodes connected to the negative signal electrode 8.
  • Each group of metal electrode groups is composed of a plurality of metal electrodes that are evenly spaced along the waveguide direction and connected to the positive signal electrode 7/negative signal electrode 8.
  • the metal electrodes are in a T-shape or a ⁇ -shape.
  • the longitudinal metal strip in the middle of the T-shape or the ⁇ -shape is connected to the positive signal electrode 7/negative signal electrode 8, and the transverse metal strips extending between the two sides are arranged parallel to the waveguide direction.
  • the shapes of the metal electrodes in the same group of metal electrode groups are the same, and the shapes of the metal electrodes of the two groups of metal electrode groups may be different.
  • the metal electrodes in the metal electrode group of the positive signal electrode 7 and The metal electrodes in the metal electrode group of the negative signal electrode 8 are arranged alternately in sequence along the waveguide direction, and the lateral branches of the metal electrodes in the metal electrode group of the positive signal electrode 7 and the lateral branches of the metal electrodes in the metal electrode group of the negative signal electrode 8 are interlaced with each other, that is, at least one lateral metal strip of the metal electrodes in the metal electrode group of the positive signal electrode 7 is interlaced between the lateral metal strip of the metal electrodes of the adjacent metal electrode group of the negative signal electrode 8 and the negative signal electrode 8, and at least one lateral metal strip of the metal electrodes in the metal electrode group of the negative signal electrode 8 is interlaced between the lateral metal strip of the metal electrodes of the adjacent metal electrode group of the positive signal electrode 7 and the positive signal electrode 7.
  • the following dimensions are set for the periodic structure electrode 6 in the specific implementation:
  • v is the width of the longitudinal metal strip
  • t and h are the widths of the upper and lower transverse metal strips
  • a is the spacing between the upper transverse metal strip and the partial structural electrode
  • l is the spacing between the lower transverse metal strip and the partial structural electrode
  • m is the width of the longitudinal metal strip
  • b and c are the widths of the upper and lower transverse metal strips
  • w is the length of the transverse metal strip
  • p is the period of the structural electrode
  • f is the spacing between the lower transverse metal strip of the partial structural electrode connecting the negative signal electrode 8 and the lower transverse metal strip of the partial structural electrode connecting the positive signal electrode
  • g is the spacing between the upper transverse metal strip of the partial structural electrode connecting the negative signal electrode 8 and the upper transverse metal strip of the partial structural electrode connecting the positive signal electrode
  • y is the spacing between the longitudinal metal strip of the partial structural electrode connecting the negative signal electrode 8 and the lower transverse metal strip of
  • v, t, h, b, c, and m are 1-5um
  • l is 15-150um
  • a is 1-120um
  • p is 30-200um
  • u is 1-24um
  • w is 25-180um
  • g and f are 1.5-5um
  • y is 0.5-5um.
  • the preparation process includes the following steps:
  • Step 1 As shown in FIG. 4 , a silicon dioxide buried oxide layer 2 is deposited on a silicon substrate 1.
  • Step 2 As shown in FIG. 5 , a lithium niobate layer 3 is prepared on the buried oxide layer 2.
  • Step 3 as shown in FIG6 , a thin-film lithium niobate waveguide 4 is formed on the lithium niobate layer 3 by dry etching.
  • Step 4 As shown in FIG. 7 , a silicon dioxide cladding layer 5 is deposited on the lithium niobate layer 3 by plasma chemical vapor deposition.
  • Step 5 use photolithography and electron beam exposure to prepare the micro-nano pattern of the first layer of metal electrodes, and use evaporation and electroplating to plate the first layer of metal electrodes on the cladding 5, including periodic structure electrodes 6, part of the positive signal electrodes 7, the negative signal electrode 8 and the ground electrode 9.
  • Step 6 as shown in FIG9 , use photolithography and electron beam exposure to prepare the micro-nano pattern of the second metal layer, and then use evaporation and electroplating to plate the second metal electrode, including the remaining positive signal electrode 7, negative signal electrode 8 and ground electrode 9, to complete the preparation of the device.
  • photolithography can be completed by stepper lithography machine, contact lithography machine, electron beam direct writing, laser direct writing and other methods
  • etching can be achieved by dry etching (such as ICP, RIE, etc.), wet etching and other methods
  • electrodes can be realized by magnetron sputtering, electron beam evaporation, electroplating and other methods.
  • a 1*2 beam splitter 10 As shown in FIG. 2 , from left to right are a 1*2 beam splitter 10 , a Mach-Zehnder structure 11 , a periodic structure electrode 6 , a positive signal electrode 7 , a negative signal electrode 8 , a ground electrode 9 , and a 2*1 beam combiner 12 .
  • the light wave is divided into two beams by a 1*2 beam splitter 10, one beam passes through the upper arm of the Mach-Zehnder structure 11, and the other beam passes through the lower arm of the Mach-Zehnder structure 11. Both arms of the Mach-Zehnder structure are located between the traveling wave positive and negative signal electrodes 7 and 8, and between a group of periodic structure electrodes 6.
  • the signal loading mode of the traveling wave electrode is a push-pull mode
  • the refractive index change of the lithium niobate optical waveguide of the upper arm and the lower arm of the Mach-Zehnder structure is in anti-phase, and a certain phase difference is generated between the upper arm and the lower arm after passing a certain distance, and the beams are combined into a waveguide output by a 2*1 beam combiner 12 to realize electro-optical modulation.
  • the present invention introduces a capacitive load-type periodic structure electrode, which leads to the introduction of additional capacitance, exacerbating the "slow wave effect", and adopts the bending of the modulation zone waveguide to achieve efficient speed matching between the microwave field and the optical wave field.
  • the modulation zone waveguide satisfies, where represents the refractive index of the light wave, represents the optical path of the light wave in one bending cycle, represents the refractive index of the microwave, and represents the length of the cycle.
  • FIG3 is a manifestation of waveguide bending.
  • the above structure is an innovative structure.
  • the electrode part introduces differential drive.
  • the specific periodic structure electrode ensures the push-pull structure of the modulator.
  • This invention is the first time in China to combine the push-pull structure with differential drive on a modulator to achieve differential push-pull modulation.

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  • Optics & Photonics (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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Abstract

本发明公开了一种基于差分驱动和推挽的薄膜铌酸锂电光调制器。包括衬底、埋氧层、铌酸锂层和包层，包层下有薄膜铌酸锂光波导，包层上有差分行波电极，差分行波电极包括周期结构电极、正信号电极、负信号电极和接地电极；周期结构电极包括连接于正、负信号电极的金属电极组，每组金属电极组均包括沿波导方向间隔均布的且多个呈T形或者土字形的金属电极，纵向金属条连接到正信号电极/负信号电极，横向金属条均平行于波导方向布置；正、负信号电极的金属电极依次交替布置、相互嵌插布置。本发明首次在薄膜铌酸锂平台上将差分驱动与推挽结构相结合，通过引入特定结构的周期性电极，实现双倍电压调制。

Description

一种基于差分驱动和推挽的薄膜铌酸锂电光调制器 技术领域
本发明涉及光通信、光传感及光集成技术领域的一种电光调制器及其制备方法，具体为一种基于差分驱动电容负载型周期结构电极的新型薄膜铌酸锂电光调制器及其制备方法。
 背景技术
随着信息时代的不断发展，一大批的新型信息化产业不断走近人们的日常生活当中，例如5G，云计算，大数据处理，人工智能等等，这些新型技术为我们的日常生活带来非常多便利的同时，也同样促使了我们对高速率，大带宽，低功耗的数据处理与传输技术的需求不断变得强烈（I. P. Kaminow, “Optical integrated circuits: A personal perspective,” J. Lightw. Technol., vol. 26, no. 9, pp. 994–1004, May 2008.）。以短距光通信中的典型应用——数据中心为例，在光通信行业龙头CISCO公司给出的数据对比中，从17年到21年，单纯数据中心的网络流量将提高174%，而整体的数据中心内部的数据容量将高达70%，功耗压力也不断地增加，因此，如何有效地解决大容量，低功耗的数据传输成为目前光通信行业急需解决的燃眉之急。
而目前，以硅作为衬底的硅基光电子集成技术由于其成本低，无源性能出色，CMOS兼容等优势得到了飞速的发展。但是由于硅本身不具备电光效应（G. T. Reed and A. P. Knights, Silicon Photonics: An Introduction: John Wiley & Sons, Inc., 2004.），只能够利用电吸收F-K效应或者载流子注入型效应等其他方式实现电光调制，调制速率无法达到非常高速（ns量级）。除了调制速率没办法达到很高的速度以外，基于纯硅的电光调制带宽目前只能做到40GHz左右，无法满足目前所需的100G，400G甚至是未来1.6T的带宽需求。因此，具有大带宽，低功耗，低插损，高速率的基于薄膜铌酸锂的电光调制器近年来得到广泛的关注。
在最近的五年里，有关薄膜铌酸锂电光调制器的研究持续不断地升温。在2018年，哈佛大学课题组在Nature上提出了首款由CMOS驱动的薄膜铌酸锂电光调制器（C. Wang, M. Zhang, X. Chen, M. Bertrand, A. Shams-Ansari, S. Chandrasekhar, P. Winzer, and M. Loncar, “Integrated lithium niobate electro-optic modulators operating at CMOS-compatible voltages,” Nature 562, 101 (2018).），实现了驱动电压为1.4V，电光带宽高达45GHz的大带宽，低功耗的薄膜铌酸锂电光调制器。一年过后，本课题组在Nature Photonics上提出了首个硅基异质集成的薄膜铌酸锂电光调制器（L. Liu ,X. Cai, et al, “High-performance hybrid silicon and lithium niobate Mach–Zehnder modulators for 100 Gbit s−1 and beyond,”Nature Photonics 13, 359–364 (2019)）并且实现了驱动电压为5.1V，电光带宽高达70GHz，证明了薄膜铌酸锂电光调制器在硅基上实现异质集成的可行性。然而，在目前的高速光通信领域，调制速率已经由100G总体向400G过渡，未来很有可能直接向1.6T的调制速率前进，针对这一现状，我们需要实现单波更高速率的电光调制器，同时降低驱动电压，满足更低功耗的需求。
 发明内容
为了解决背景技术中存在的问题，本发明提出了一种基于差分驱动电容负载型周期结构电极的新型薄膜铌酸锂电光调制器及其制备方法。
本发明首次在薄膜铌酸锂调制器上使差分驱动与推挽结构相结合，同时该发明结构可以应用于目前的硅基异质集成平台上，同样提高了该新型电光调制器未来应用于光通信等其他领域的可行性。
本发明所采用的技术方案如下：
一、一种基于差分驱动和推挽的薄膜铌酸锂电光调制器：
包括从下到上依次布置的衬底、埋氧层、铌酸锂层、包层，所述的包层下设有薄膜铌酸锂光波导，在包层上设有沿波导方向布置的差分行波电极，差分行波电极包括周期结构电极、正信号电极、负信号电极和接地电极；正信号电极、负信号电极分别布置于薄膜铌酸锂光波导正上方的两侧，两个接地电极分别布置于正信号电极、负信号电极的各自外侧，周期结构电极设置在薄膜铌酸锂光波导正上方的包层上。
所述的周期结构电极是由周期性结构的金属电极布置构成。
所述的周期结构电极包括连接于正信号电极的一组金属电极组和连接于负信号电极的另一组金属电极组，每组金属电极组均由沿波导方向间隔均布的且连接正信号电极/负信号电极的多个金属电极构成，金属电极呈T形或者土字形，T形或者土字形中位于中间的纵向金属条连接到正信号电极/负信号电极，横向金属条均平行于波导方向布置；同一组金属电极组中金属电极的形状相同，正信号电极的金属电极组中的金属电极和负信号电极的金属电极组中的金属电极沿波导方向依次交替且布置，正信号电极金属电极组中的金属电极的横向分支部与负信号电极金属电极组的金属电极的横向分支部相互嵌插布置。
所述的差分行波电极是镀在包层上形成。所述差分行波电极上施加电压，用于调制光波信号。
所述的薄膜铌酸锂光波导是在铌酸锂层上刻蚀形成且被包层包覆。
所述的薄膜铌酸锂光波导包含了1*2分束器、马赫曾德尔结构和2*1合束器，1*2分束器和2*1合束器分别位于马赫曾德尔结构的两侧，1*2分束器的输入端用于输入光信号，1*2分束器的两个输出端经马赫曾德尔结构和2*1合束器的两个输入端连接，2*1合束器的输出端用于输出光信号；正信号电极、负信号电极分别布置于马赫曾德尔结构正上方的两侧，周期结构电极设置在马赫曾德尔结构正上方上。
所述的马赫曾德尔结构包括两个分支臂，1*2分束器的两个输出端分别经各自的一个分支臂和2*1合束器的两个输入端连接。光经过1*2分束器分成两束，分别经过马赫曾德尔结构上下两分支臂，最后经过2*1合束器合成一束。
所述的马赫曾德尔结构的两个分支臂位于金属信号电极、中间的下方，同时位于周期结构电极中间的下方。
由差分行波电极构成了差分驱动结构，由差分行波电极和马赫曾德尔结构构成了推挽结构。
本发明设置了周期结构电极，周期结构电极中的金属电极两两交替排布，均位于金属的正、负信号电极、中间。这样引入了周期结构电极，能够将差分驱动结构和推挽结构进行结合，形成差分调制器，使得调制长度减半，提高了带宽性能。
所述的衬底为硅、铌酸锂、石英或空气，埋氧层为二氧化硅，厚度为1-6um。
所述的薄膜铌酸锂光波导的波导调制区域的波导倾角为60-70度，总体厚度为200-600nm，刻蚀厚度为100-300nm。
所述的包层为二氧化硅，厚度为0.1-3um。
二、薄膜铌酸锂电光调制器的制备方法，方法包括以下步骤：
步骤1、在衬底上沉积一层埋氧层；
步骤2、在埋氧层上制备铌酸锂层；
步骤3、利用电子束曝光或光刻方法在铌酸锂层上制备微纳图案、再利用刻蚀方法制备形成薄膜铌酸锂光波导；
在制备薄膜铌酸锂光波导过程中同时制备出其中的1*2分束器，马赫曾德尔结构和2*1合束器。
步骤4、在铌酸锂层上沉积一层二氧化硅的包层；
步骤5、在二氧化硅的包层上利用溅射或蒸镀方式镀第一层薄金属，作为周期结构电极以及部分正信号电极、负信号电极和接地电极；
步骤6、再利用溅射或蒸镀的方式镀第二层厚金属，作为剩余的正信号电极、负信号电极和接地电极，完成薄膜铌酸锂电光调制器的制备。
所述光刻采用的方法包括步进式光刻机，接触式光刻机，电子束直写，激光直写等等。
所述的刻蚀方法包括干法刻蚀和湿法刻蚀。
所述的干法刻蚀包括聚焦离子束刻蚀，反应离子刻蚀。
所述的溅射的方法包括磁控溅射，电子束蒸镀，电镀。
本发明创新性地引入特定周期结构电极。通过采用特定周期结构电极，实现差分信号驱动与推挽结构相结合，从而将调制电压翻倍，实现双倍电压调制，从而有效地缩短调制器的尺寸。
本发明所产生的技术效果：
（1）本发明通过引入特定周期结构电极，将差分信号驱动与推挽结构相结合，实现双倍电压调制。
（2）本发明通过引入特定周期结构电极，在确保波导两侧电极间距足够小时，可以得到极小的半波电压与长度的乘积，同时极小的电极间距也使得微波场限制在较小的范围内，保证了在高频情况下由衬底导致的辐射损耗可以大大被减弱。
（3）本发明采用调制区域波导弯曲的方式，减缓由周期结构电极引起的慢波效应，因此实现高效的微波与光波的速度匹配。
 附图说明
下面对说明书附图所表达的内容做简要说明：
图1是本发明中的新型薄膜铌酸锂电光调制器的制备流程图。
图2是本发明中的新型薄膜铌酸锂电光调制器整体器件的俯视图。
图3是本发明中调制区波导的一种弯曲方法示意图。
图4是图2黑色虚线处，本发明制备方法步骤1所得结构横向截面图。
图5是图2黑色虚线处，本发明制备方法步骤2所得结构横向截面图。
图6是图2黑色虚线处，本发明制备方法步骤3所得结构横向截面图。
图7是图2黑色虚线处，本发明制备方法步骤4所得结构横向截面图。
图8是图2黑色虚线处，本发明制备方法步骤5所得结构横向截面图。
图9是图2黑色虚线处，本发明制备方法步骤6所得结构横向截面图。
图10是周期结构电极的另一种表现形式及其与波导的相对位置图。
图11是周期结构电极的另一种表现形式及其与波导的相对位置图。
图12是图2中黑色虚线框放大的周期结构电极示意图。
图中，1-衬底，2-埋氧层，3-铌酸锂层，4-薄膜铌酸锂光波导，5-包层，6-周期结构电极，7-正信号电极，8-负信号电极，9-接地电极，10-1*2分束器，11-马赫曾德尔结构，12-2*1合束器。
 具体实施方式
下面对本发明具体的实施方式如所涉及的各构件的形状、构造、各部分之间的相互连接关系、各部分的作用及工作原理、制作工艺及操作使用方法等，做进一步详细的说明。以便于对本发明的构思、技术方案有更完整、准确和深入的理解。
本发明首次在薄膜铌酸锂调制器上实现推挽结构与差分驱动相结合，该发明具体表现在结构上的创新。
如图9所示，展示了由图2黑色虚线处的横向截面示意图，本实施例包括从下到上依次布置的衬底1、埋氧层2、铌酸锂层3、薄膜铌酸锂光波导4、包层5、周期结构电极6、正信号电极7、负信号电极8和接地电极9。
在铌酸锂层3上进行刻蚀工艺形成薄膜铌酸锂光波导4，薄膜铌酸锂光波导4布置形成1*2分束器10、马赫曾德尔结构11、2*1合束器12。
在包层5上镀两层金属电极，第一层包括周期结构电极6以及部分正信号电极7、负信号电极8和接地电极9，第二层包括剩余的正信号电极7、负信号电极8和接地电极9。周期结构电极6分别两两排布位于正信号电极7和负信号电极8之间，正信号电极7和负信号电极8位于两个接地电极9之间。
具体实施中，衬底1为硅，埋氧层2为二氧化硅，厚度为3um，铌酸锂层3总体厚度为400nm，波导4厚度为200nm，波导4倾角为60度。
具体实施中，周期结构电极6可以是图2中的结构，也可以是图10、图11或者其他类似的结构，波导与周期结构电极的相对位置如图2、图10、图11所示。
周期结构电极6包括连接于正信号电极7的一组金属电极组和连接于负信号电极8的另一组金属电极组，每组金属电极组均由沿波导方向间隔均布的且连接正信号电极7/负信号电极8的多个金属电极构成，金属电极呈T形或者土字形，T形或者土字形中位于中间的纵向金属条连接到正信号电极7/负信号电极8，两侧间延伸的横向金属条均平行于波导方向布置；同一组金属电极组中金属电极的形状相同，两组金属电极组的金属电极的形状可以不同，正信号电极7的金属电极组中的金属电极和负信号电极8的金属电极组中的金属电极沿波导方向依次交替且布置，正信号电极7金属电极组中的金属电极的横向分支部与负信号电极8金属电极组的金属电极的横向分支部相互嵌插布置，即正信号电极7金属电极组中金属电极的至少一个横向金属条嵌插布置与其相邻的负信号电极8金属电极组的金属电极的横向金属条和负信号电极8之间，负信号电极8金属电极组中金属电极的至少一个横向金属条嵌插布置与其相邻的正信号电极7金属电极组的金属电极的横向金属条和正信号电极7之间。
如图12所示，具体实施对于周期结构电极6进行以下尺寸设置：
在连接正信号电极7的部分结构电极中，v为纵向金属条宽度，t、h为上、下侧横向金属条宽度，a为上侧横向金属条与部分结构电极的间距，l为下侧横向金属条与部分结构电极的间距；在连接负信号电极8的部分结构电极中，m为纵向金属条宽度，b、c为上、下侧横向金属条宽度，w为横向金属条的长度；p为结构电极的周期，f为连接负信号电极8部分结构电极的下侧横向金属条与连接正信号电极7部分结构电极的下侧横向金属条的间距，g为连接负信号电极8部分结构电极的上侧横向金属条与连接正信号电极7部分结构电极的上侧横向金属条的间距，y为连接负信号电极8部分结构电极的纵向金属条与连接正信号电极7部分结构电极的下侧横向金属条的间距，u为两个连接正信号电极7部分结构电极的上侧横向金属条的间距。
具体实施中，v、t、h、b、c、m为1-5um，l为15-150um，a为1-120um，p为30-200um，u为1-24um，w为25-180um，g、f为1.5-5um，y为0.5-5um。
如图1所示，制备过程包括以下步骤：
步骤1、如图4所示，在硅衬底1上沉积一层二氧化硅埋氧层2
步骤2、如图5所示，在埋氧层2上制备铌酸锂层3
步骤3、如图6所示，在铌酸锂层3上利用干法刻蚀形成薄膜铌酸锂波导4
步骤4、如图7所示，在铌酸锂层3上利用等离子化学气相沉积法沉积一层二氧化硅包层5
步骤5、如图8所示，利用光刻，电子束曝光的方式制备第一层金属电极的微纳图案，在包层5上利用蒸镀，电镀的方式镀第一层金属电极，包括周期结构电极6、部分正信号电极7、负信号电极8和接地电极9。
步骤6、如图9所示，利用光刻，电子束曝光的方式制备第二层金属的微纳图案，再利用蒸镀，电镀的方式镀第二层金属电极，包括剩余的正信号电极7、负信号电极8和接地电极9，完成器件的制备。
在上述步骤中，光刻可通过步进式光刻机，接触式光刻机，电子束直写，激光直写等方法来完成，刻蚀可通过干法刻蚀（如ICP，RIE等），湿法刻蚀等方法实现，电极可通过磁控溅射，电子束蒸镀，电镀等方法来实现。
如图2所示，从左至右分别为1*2分束器10，马赫曾德尔结构11，周期结构电极6，正信号电极7，负信号电极8，接地电极9，2*1合束器12。
光波通过1*2分束器10将光波分为两束，一束经过马赫曾德尔结构11的上臂，一束经过马赫曾德尔结构11的下臂。马赫曾德尔结构的两臂均位于行波正、负信号电极7、8之间，且位于一组周期结构电极6之间。由于行波电极的信号加载方式为推挽方式，因此马赫曾德尔结构的上臂与下臂的铌酸锂光波导折射率变化为反相，通过一定距离后上臂与下臂产生一定的相位差，通过2*1合束器12合束为一根波导输出，实现电光调制。
本发明引入电容负载型周期结构电极导致引入额外的电容，加剧“慢波效应”，采用调制区波导弯曲的方式实现高效的微波场与光波场的速度匹配。一个弯曲周期内，调制区波导满足，式中表示光波的折射率，表示一个弯曲周期内光波的光程，表示微波的折射率，表示所述周期的长度，图3是波导弯曲的一种表现形式。
上述结构为创新性结构，电极部分引入差分驱动，同时特定的周期结构电极保证了调制器的推挽结构，该发明是国内首次在调制器上将推挽结构与差分驱动相结合，实现差分推挽调制。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，任何其它的结构若符合结构上材料，厚度等变化的情况以及其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。

Claims (10)

  1. 一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，包括从下到上依次布置的衬底（1）、埋氧层（2）、铌酸锂层（3）、包层（5），所述的包层（5）下设有薄膜铌酸锂光波导（4），其特征在于：在包层（5）上设有沿波导方向布置的差分行波电极，差分行波电极包括周期结构电极（6）、正信号电极（7）、负信号电极（8）和接地电极（9）；正信号电极（7）、负信号电极（8）分别布置于薄膜铌酸锂光波导（4）正上方的两侧，两个接地电极（9）分别布置于正信号电极（7）、负信号电极（8）的外侧，周期结构电极（6）设置在薄膜铌酸锂光波导（4）正上方上。
  2. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的周期结构电极（6）是由周期性结构的金属电极布置构成。
  3. 根据权利要求2所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的周期结构电极（6）包括连接于正信号电极（7）的一组金属电极组和连接于负信号电极（8）的另一组金属电极组，每组金属电极组均由沿波导方向间隔均布的且连接正信号电极（7）/负信号电极（8）的多个金属电极构成，金属电极呈T形或者土字形，T形或者土字形中位于中间的纵向金属条连接到正信号电极（7）/负信号电极（8），横向金属条均平行于波导方向布置；同一组金属电极组中金属电极的形状相同，正信号电极（7）的金属电极组中的金属电极和负信号电极（8）的金属电极组中的金属电极沿波导方向依次交替且布置，正信号电极（7）金属电极组中的金属电极的横向分支部与负信号电极（8）金属电极组的金属电极的横向分支部相互嵌插布置。
  4. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的差分行波电极是镀在包层（5）上形成。
  5. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的薄膜铌酸锂光波导（4）是在铌酸锂层（3）上刻蚀形成且被包层（5）包覆。
  6. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的薄膜铌酸锂光波导（4）包含了1*2分束器（10）、马赫曾德尔结构（11）和2*1合束器（12），1*2分束器（10）和2*1合束器（12）分别位于马赫曾德尔结构（10）的两侧，1*2分束器（10）的两个输出端经马赫曾德尔结构（10）和2*1合束器（12）的两个输入端连接；正信号电极（7）、负信号电极（8）分别布置于马赫曾德尔结构（11）正上方的两侧，周期结构电极（6）设置在马赫曾德尔结构（11）正上方上。
  7. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的衬底（1）为硅、铌酸锂、石英或空气，埋氧层（2）为二氧化硅，厚度为1-6um。
  8. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的薄膜铌酸锂光波导（4）的波导调制区域的波导倾角为60-70度，总体厚度为200-600nm，刻蚀厚度为100-300nm。
  9. 根据权利要求1所述的一种基于差分驱动和推挽的薄膜铌酸锂电光调制器，其特征在于：所述的包层（5）为二氧化硅，厚度为0.1-3um。
  10. 应用于权利要求1-9任一所述薄膜铌酸锂电光调制器的制备方法，其特征在于方法包括以下步骤：
    步骤1、在衬底（1）上沉积一层埋氧层（2）；
    步骤2、在埋氧层（2）上制备铌酸锂层（3）；
    步骤3、利用电子束曝光或光刻方法在铌酸锂层（3）上制备微纳图案、再利用刻蚀方法制备形成薄膜铌酸锂光波导（4）；
    步骤4、在铌酸锂层（3）上沉积一层二氧化硅的包层（5）；
    步骤5、在二氧化硅的包层（5）上利用溅射或蒸镀方式镀第一层薄金属，作为周期结构电极（6）以及部分正信号电极（7）、负信号电极（8）和接地电极（9）；
    步骤6、再利用溅射或蒸镀的方式镀第二层厚金属，作为剩余的正信号电极（7）、负信号电极（8）和接地电极（9），完成薄膜铌酸锂电光调制器的制备。
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